Substrate processing equipment

Abstract

The objective is to provide a substrate processing apparatus that can improve the uniformity of the processing rate within the plane of the substrate. [Solution] The substrate processing apparatus 1 includes a holding part 10 that holds and rotates the substrate W, a processing liquid supply part 21 that supplies a first processing liquid and a second processing liquid which is at a lower temperature than the first processing liquid to the substrate W, an annular ring member 31 which has an inner periphery shaped to follow the outer periphery of the substrate W and is integrally formed over its entire circumference, and a flow path 33 through which liquid flows in the circumferential direction, and a liquid supply part 34 that supplies liquid to the flow path 33. The liquid supply part 34 supplies liquid to the flow path 33, thereby adjusting the temperature of the ring member 31 to a predetermined temperature which is lower than the temperature of the first processing liquid and higher than the temperature of the second processing liquid.

Description

Technical Field

[0001] Embodiments of the present invention relate to a substrate processing apparatus.

Background Art

[0002] In manufacturing processes for semiconductor devices, flat panel displays, etc., an etching solution is supplied to a film provided on the surface of a substrate such as a wafer or a glass substrate to form a desired pattern. As an apparatus for performing such an etching process, a substrate processing apparatus that supplies an etching solution to the central region of a rotated substrate has been proposed. In this case, the etching solution supplied to the central region of the substrate spreads toward the outer peripheral edge of the substrate due to centrifugal force, so the surface of the substrate is etched with the supplied etching solution.

[0003] Here, since the etching process is performed by a chemical reaction between the etching solution and the removal portion of the etching target, it is necessary to ensure the time during which the etching solution contacts the removal portion. In this case, if the number of rotations of the substrate per unit time is increased, the flow rate of the etching solution becomes high, so the etching reaction does not proceed. Therefore, when performing the etching process, the rotation speed of the substrate is set lower than in the case of a cleaning process using a cleaning solution such as pure water. If the rotation speed of the substrate is lowered, the flow rate of the etching solution becomes slow, so the time during which the etching solution contacts the removal portion can be lengthened. Thereby, the etching reaction can be promoted with respect to the removal portion.

[0004] However, at the outer edge of the substrate, surface tension makes it difficult for the etching solution to be discharged outward. Moreover, reducing the rotation speed of the substrate reduces the centrifugal force acting radially outward, making it even more difficult for the etching solution to be discharged from the substrate. As a result, the etching solution tends to accumulate at the outer edge of the substrate. Here, the etching solution supplied to the central region of the substrate flows toward the outer edge of the substrate while undergoing a chemical reaction with the material to be removed. The etching solution that has flowed to the outer edge of the substrate is already used etching solution, that is, etching solution whose reactivity with the material to be removed has decreased. When etching solution with reduced reactivity accumulates at the outer edge of the substrate, the processing rate at the outer edge of the substrate decreases, and the uniformity of the processing rate within the plane of the substrate is impaired.

[0005] Therefore, a substrate processing apparatus has been proposed in which an annular ring member is provided on the outer periphery of the substrate, with an inner periphery shaped to follow the outer edge of the substrate, so that the surface of the substrate is expanded by the ring member (Patent Document 1). As a result, surface tension does not act on the etching solution that flows to the outer edge of the substrate, so that the etching solution can be smoothly discharged to the outside of the substrate. In this way, the accumulation of etching solution with reduced reactivity at the outer edge of the substrate can be suppressed, and the uniformity of the processing rate within the plane of the substrate can be improved. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2022-155377 [Overview of the project] [Problems that the invention aims to solve]

[0007] However, in a substrate processing apparatus with a ring member attached to the outer edge of the substrate, the high-temperature etching solution supplied to the substrate during the etching process spreads to the outer edge of the substrate due to the rotation of the substrate, causing the ring member to heat up to a high temperature. After the etching process, the etching solution is replaced with a low-temperature cleaning solution, and the low-temperature cleaning solution supplied to the substrate spreads to the outer edge of the substrate due to the rotation of the substrate, cooling the ring member. These temperature fluctuations cause thermal expansion and contraction of the ring member. As a result, the ring member may become distorted. When the ring member becomes distorted, it becomes difficult to maintain uniform proximity to the outer edge of the substrate.

[0008] If there are areas where the ring member and the outer edge of the substrate are not in close proximity, the surface of the substrate in those areas will not be expanded, which is equivalent to the state where the ring member is not present. As a result, the etching solution will accumulate at the outer edge of the substrate, and the processing rate at the outer edge of the substrate will decrease.

[0009] The present invention has been made to solve the above problems and aims to provide a substrate processing apparatus that can improve the uniformity of the processing rate within the plane of the substrate. [Means for solving the problem]

[0010] The substrate processing apparatus according to the embodiment includes a holding unit for holding and rotatable substrates, a processing liquid supply unit for supplying a first processing liquid and a second processing liquid having a lower temperature than the first processing liquid to the substrate, an annular ring member integrally formed over its entire circumference and having an inner periphery shaped to follow the outer periphery of the substrate, and having a flow path through which liquid flows in the circumferential direction, and a liquid supply unit for supplying the liquid to the flow path, wherein the liquid supply unit adjusts the temperature of the ring member to a predetermined temperature set to be lower than the temperature of the first processing liquid and higher than the temperature of the second processing liquid by supplying the liquid to the flow path. [Effects of the Invention]

[0011] According to embodiments of the present invention, the uniformity of the processing rate within the plane of the substrate can be improved. [Brief explanation of the drawing]

[0012] [Figure 1] This is a cross-sectional view showing the schematic configuration of the substrate processing apparatus according to the embodiment. [Figure 2] Figure 2(A) is a schematic plan view illustrating the ring member, and Figure 2(A) is a view of the ring member from the direction of arrow A. [Figure 3] These are cross-sectional views (A) illustrating the position of each component during the etching process, and (B) illustrating the position of each component during the cleaning process. [Figure 4] This is a schematic cross-sectional view showing the flow state of the etching solution during etching at the cross-sectional position of line BB in Figure 2(A). [Figure 5] This is a flowchart showing the substrate processing procedure of the embodiment. [Modes for carrying out the invention]

[0013] [composition] Hereinafter, a substrate processing apparatus 1 according to an embodiment of the present invention will be described with reference to Figures 1 to 4. For the substrate W, the side to be processed is the front surface, and the opposite side is the back surface. In this embodiment, for example, a nitride film is formed on the surface of the substrate W to be processed. As shown in Figure 1, the substrate processing apparatus 1 includes a holding unit 10, a supply unit 20, a ring unit 30, a rotating mechanism 40, a recovery unit 50, and a control unit 60.

[0014] The holding unit 10 horizontally holds the substrate W in a rotatable manner. The holding unit 10 comprises a mounting unit 11, a shaft 12, a holding pin 13, and a pin opening / closing mechanism 14.

[0015] The mounting portion 11 is cylindrical in shape, and its radial size is larger than that of the substrate W. The mounting portion 11 has a surface 11a that faces the back surface of the substrate W. The central region of surface 11a is open.

[0016] The shaft 12 has a cylindrical shape with a diameter smaller than that of the mounting portion 11, and is connected to the surface of the mounting portion 11 opposite to the surface 11a such that the axes are aligned. Further, the shaft 12 is hollow and is formed such that the opening of the surface 11a in plan view overlaps with the hollow of the shaft 12.

[0017] The holding pins 13 hold the substrate W horizontally by contacting the outer peripheral edge of the substrate W. A plurality of holding pins 13 are provided at equal intervals on the surface 11a of the mounting portion 11. As shown in FIG. 2(A), in this embodiment, six holding pins 13 are provided.

[0018] The pin opening / closing mechanism 14 moves a plurality of holding pins 13 between an open position away from the substrate W and a closed position in contact with the outer peripheral edge of the substrate W to hold the substrate W.

[0019] As shown in FIG. 1, the supply unit 20 is provided above the holding unit 10. The supply unit 20 includes a processing liquid supply unit 21, a heating unit 22, and a supply unit lifting mechanism 23.

[0020] The processing liquid supply unit 21 supplies a processing liquid to the surface of the substrate W held by the holding unit 10. In this embodiment, the processing liquids are a first processing liquid and a second processing liquid. The first processing liquid is, for example, an etching liquid Lp such as an aqueous solution containing phosphoric acid (hereinafter referred to as a phosphoric acid solution), an aqueous solution containing hydrogen fluoride, etc. The second processing liquid is, for example, a cleaning liquid Lw such as pure water, IPA, etc. Also, the temperature of the first processing liquid can be, for example, 160°C, and the temperature of the second processing liquid can be, for example, 25°C. In this embodiment, a phosphoric acid solution is used for the etching liquid Lp and pure water is used for the cleaning liquid Lw. The processing liquid supply unit 21 includes a processing liquid nozzle 211, a processing liquid tank 212, a processing liquid supply pipe 213, a pump 214, a valve 215, and a flow meter 216.

[0021] The processing liquid nozzle 211 includes a first processing liquid nozzle 211a and a second processing liquid nozzle 211b. The first processing liquid nozzle 211a supplies the etching liquid Lp to the surface of the substrate W. The second processing liquid nozzle 211b supplies the cleaning liquid Lw to the surface of the substrate W.

[0022] The processing liquid tank 212 stores a plurality of processing liquids separately for each processing liquid. The processing liquid tank 212 includes a first processing liquid tank 212a for storing the etching liquid Lp and a second processing liquid tank 212b for storing the cleaning liquid Lw. Further, the first processing liquid tank 212a is provided with a heating part (not shown) inside. The heating part heats the etching liquid Lp according to the processing on the substrate W and adjusts the temperature of the etching liquid Lp. In the present embodiment, the heating part heats the phosphoric acid solution to about 160°C, for example.

[0023] The processing liquid supply pipe 213 is a pipe for sending the processing liquid stored in the processing liquid tank 212 to the processing liquid nozzle 211. That is, one end of the processing liquid supply pipe 213 is connected to the processing liquid nozzle 211, and the other end of the processing liquid supply pipe 213 is connected to the processing liquid tank 212. The processing liquid supply pipe 213 includes a first processing liquid supply pipe 213a and a second processing liquid supply pipe 213b. One end of the first processing liquid supply pipe 213a is connected to the first processing liquid tank 212a, and the other end is connected to the first processing liquid nozzle 211a. One end of the second processing liquid supply pipe 213b is connected to the second processing liquid tank 212b, and the other end is connected to the second processing liquid nozzle 211b.

[0024] The pump 214 is provided in the processing liquid supply pipe 213. The pump 214 supplies the processing liquid stored in the processing liquid tank 212 to the processing liquid nozzle 211.

[0025] The valve 215 is provided in the processing liquid supply pipe 213. The valve 215 has a function of starting and stopping the supply of the processing liquid and a function of adjusting the flow rate.

[0026] The flow meter 216 is provided in the processing liquid supply pipe 213. The flow meter 216 detects the flow rate of the processing liquid flowing through the processing liquid supply pipe 213.

[0027] The heating unit 22 heats the etching solution Lp on the surface of the substrate W to, for example, 180°C. Note that heating the etching solution Lp supplied to the surface of the substrate W includes heating the substrate W and indirectly heating the etching solution Lp through the substrate W. The heating unit 22 comprises a plate 221 and a heater 222.

[0028] The plate 221 is circular in shape and is positioned horizontally opposite the surface of the substrate W. The outer diameter of the plate 221 is larger than the outer diameter of the substrate W. The plate 221 preferably has heat resistance and chemical resistance, and is formed of, for example, quartz. In this embodiment, the plate 221 has two supply ports 221a. The supply ports 221a are formed on the plate 221 at a position slightly offset from the position corresponding to the rotation axis of the substrate W for each processing liquid nozzle 211. As a result, the opposing positions of the supply ports 221a on the substrate W change sequentially as the substrate W rotates, and the temperature of the etching liquid Lp can be made uniform. The tips of the first processing liquid nozzle 211a and the second processing liquid nozzle 211b are inserted through the two supply ports 221a, respectively.

[0029] The heater 222 is circular and sheet-like. Multiple heaters 222 may be provided concentrically. In this case, multiple annular heater pieces are provided on the outside of the circular heater piece. The heater 222 generates heat when electricity is passed through it. The multiple heaters 222 may generate heat such that the temperature increases towards the radially outward direction. This suppresses the decrease in temperature of the outer edge of the substrate W due to heat dissipation. The heater 222 has through holes 222a. The through holes 222a are located in the heater 222 slightly offset from the rotation axis of the substrate W, and are formed at the same position as the supply port 221a in a plan view for each processing liquid nozzle 211. The first processing liquid nozzle 211a and the second processing liquid nozzle 211b are inserted through the two through holes 222a, respectively.

[0030] The supply unit lifting mechanism 23 moves the supply unit 20 in a direction toward or toward the substrate W. For example, the supply unit lifting mechanism 23 moves the supply unit 20 between a standby position away from the substrate W so that the substrate W can be loaded and unloaded, as shown in Figure 1, and a heating position close to the substrate W at a predetermined distance so that the etching solution Lp can be heated during the etching process, as shown in Figure 3(A).

[0031] The ring section 30 includes a ring member 31, a ring member lifting mechanism 32, a flow path 33, a liquid supply section 34, a liquid discharge pipe 35, and a detection section 36.

[0032] As shown in Figure 2(A), the ring member 31 is an annular member in which an inner periphery shaped to follow the outer edge of the substrate W is integrally formed around its entire circumference. The ring member 31 is plate-shaped, and its outer diameter is smaller than the outer diameter of the plate 221 of the heating section 22. The ring member 31 preferably has heat resistance and chemical resistance, and its material can be, for example, polyphenylene sulfide (PPS). The ring member 31 is provided on the surface 11a of the mounting section 11 so as to be able to move up and down by a ring member lifting mechanism 32, which will be described later. By approaching the outer edge of the substrate W without contact, the ring member 31 smoothly discharges the etching solution Lp that has spread to the outer edge of the substrate W due to the rotation of the substrate W to the outside of the substrate W. The surface of the ring member 31 facing the plate 221 of the heating section 22 is called the front surface, and the opposite surface is called the back surface. The surface of the ring member 31 is preferably a horizontal surface. The ring member 31 has a cover portion 31a, a notch 31b, and a hole 31c.

[0033] As shown in Figure 4, the cover portion 31a is a member that integrally protrudes towards the mounting portion 11 side along the entire circumference of the outer edge of the ring member 31. When the ring member 31 is close to the outer edge of the substrate W, the cover portion 31a prevents the etching solution Lp that has scattered radially outward from the ring member 31 from getting onto the back surface of the substrate W.

[0034] The notch 31b is a recess provided on the inner side surface of the ring member 31. Furthermore, as shown in Figure 2(A), the notch 31b is shaped to accommodate the retaining pin 13 in its closed position, thus avoiding interference with the retaining pin 13. While this embodiment shows a U-shaped example, the shape is not limited to this. In a plan view, the same number of notches 31b are provided at the same positions as the retaining pin 13. Therefore, in this embodiment, six notches are provided.

[0035] As shown in Figure 2(B), the hole 31c is formed on the side surface of the ring member 31, including the cover portion 31a on the outer circumference. One end of the hole 31c is connected to the tip of the first flow path 33a or the tip of the second flow path 33b, which will be described later. The other end of the hole 31c is connected to the tip of the first liquid supply pipe 341a or the tip of the second liquid supply pipe 341b, which will be described later. Note that the liquid supply pipe 341 and the liquid discharge pipe 35, which will be described later, are not shown in Figure 2(B).

[0036] The ring member lifting mechanism 32 moves the position of the ring member 31 in the rotation axis direction of the substrate W. For example, the ring member lifting mechanism 32 moves the ring member 31 to a close position where the inner edge of the ring member 31 is close to the outer edge of the substrate W, as shown in Figure 3(A), and to a retracted position where the inner edge of the ring member 31 is retracted from the outer edge of the substrate W, as shown in Figure 3(B).

[0037] The proximity position specifically refers to the position where the inner edge of the ring member 31 and the outer edge of the substrate W are close enough that the etching solution Lp does not fall through the gap between the substrate W and the ring member 31. When the ring member 31 is in the proximity position, the surface of the ring member 31 is flush with the surface of the substrate W, or slightly lower than the surface of the substrate W.

[0038] The retracted position specifically refers to a position where the substrate W can be loaded and unloaded, and where the ring member 31 is separated from the outer edge of the substrate W so that the outer edge of the substrate W and the processing liquid near the outer edge of the substrate W are not heated by radiant heat from the ring member 31. When the ring member 31 is in the retracted position, a gap is formed between the surface 11a of the mounting section 11 and the ring member 31 through which the liquid supply pipe 341 and the liquid discharge pipe 35, which will be described later, pass.

[0039] As shown in Figure 4, the flow path 33 is provided inside the ring member 31. More preferably, it is provided around the entire circumference inside the outer edge of the ring member 31, including the cover portion 31a. The flow path 33 maintains the ring member 31 at a predetermined temperature by allowing the processing liquid to flow. The predetermined temperature is set to be lower than the temperature of the processing liquid used when processing at the highest temperature among the multiple processing liquids supplied to the substrate W, and higher than the temperature of the processing liquid used when processing at the lowest temperature. Furthermore, it is preferable that the predetermined temperature is the highest temperature among those at which the radiant heat of the ring member 31 does not cause unintended etching on the substrate W when the ring member 31 is in the retracted position. The flow path 33 has a first flow path 33a and a second flow path 33b.

[0040] The first channel 33a is supplied with etching solution Lp stored in the first processing liquid tank 212a. The second channel 33b is supplied with cleaning solution Lw stored in the second processing liquid tank 212b. The first channel 33a is preferably located closer in a straight line distance to the inner edge of the ring member 31 than the second channel 33b, in order to facilitate heat transfer to the outer edge of the substrate W. As shown in Figure 4, in this embodiment, of the two channels 33 arranged side by side in the rotation axis direction of the ring member 31, the side closer to the surface of the ring member 31 is designated as the first channel 33a, and the side closer to the mounting portion 11 is designated as the second channel 33b. In addition, multiple first channels 33a and second channels 33b may be provided. In this case, it is preferable that the first channels 33a and second channels 33b are arranged alternately.

[0041] The liquid supply unit 34 includes a liquid supply pipe 341, a pump 342, a valve 343, and a flow meter 344.

[0042] The liquid supply pipe 341 is a pipe for supplying liquid to the flow path 33. In this embodiment, the liquid supplied to the flow path 33 is the processing liquid stored in the processing liquid tank 212. That is, one end of the liquid supply pipe 341 is connected to the processing liquid tank 212, and the other end is connected to the flow path 33 via a hole 31c. As shown in Figure 1, the liquid supply pipe 341 is inserted through the opening of the surface 11a and the hollow of the shaft 12. A rotary joint (not shown) is provided in the middle of the liquid supply pipe 341 so as not to obstruct the rotation of the mounting part 11. The liquid supply pipe 341 is also connected to supply the processing liquid to the flow path 33 through the gap between the mounting part 11 and the back surface of the ring member 31. The liquid supply pipe 341 has a first liquid supply pipe 341a and a second liquid supply pipe 341b. One end of the first liquid supply pipe 341a is connected to the first processing liquid tank 212a, and the other end is connected to the first flow path 33a. Furthermore, one end of the second liquid supply pipe 341b is connected to the second processing liquid tank 212b, and the other end is connected to the second flow path 33b.

[0043] Pump 342 is installed in the liquid supply pipe 341. Pump 342 supplies the processing liquid stored in the processing liquid tank 212 to the flow path 33.

[0044] Valve 343 is installed in the liquid supply pipe 341. Valve 343 has the function of starting and stopping the supply of the processing liquid and adjusting the flow rate.

[0045] The flow meter 344 is installed in the liquid supply pipe 341. The flow meter 344 detects the flow rate of the processing liquid flowing through the liquid supply pipe 341.

[0046] The liquid discharge pipe 35 is a pipe for recovering the liquid that has flowed through the flow path 33. In this embodiment, the liquid flowing through the flow path 33 is the processing liquid stored in the processing liquid tank 212. The liquid recovered via the liquid discharge pipe 35 is sent to the processing liquid tank 212. That is, one end of the liquid discharge pipe 35 is connected to the flow path 33 via a hole 31c, and the other end is connected to the processing liquid tank 212. As shown in Figure 1, the liquid discharge pipe 35 is inserted through the opening in the surface 11a and the hollow of the shaft 12. The liquid discharge pipe 35 is connected to discharge the processing liquid from the flow path 33 through the gap between the mounting portion 11 and the back surface of the ring member 31. The liquid discharge pipe 35 is also provided with a rotary joint (not shown) so as not to obstruct the rotation of the mounting portion 11. The liquid discharge pipe 35 has a first liquid discharge pipe 35a and a second liquid discharge pipe 35b. The first liquid discharge pipe 35a has one end connected to the first flow path 33a and the other end connected to the first treated liquid tank 212a. The second liquid discharge pipe 35b has one end connected to the second flow path 33b and the other end connected to the second treated liquid tank 212b.

[0047] The detection unit 36 ​​detects the temperature of the ring member 31 while the processing liquid is being supplied to the flow path 33. Preferably, the detection unit 36 ​​is located in a position that is not directly affected by radiant heat from the heating unit 22, for example, on the back surface of the ring member 31. Also, as shown in Figure 4, preferably, the detection unit 36 ​​is located in a position that is not directly affected by radiant heat from the substrate W and the etching solution Lp supplied to the substrate W, for example, near the cover portion 31a on the back surface of the ring member 31. For example, a thermocouple or a resistance thermometer can be used as the detection unit 36. If the detection unit 36 ​​is a thermocouple that requires a wire (not shown), the wire is inserted through the opening in the surface 11a and the hollow of the shaft 12, similar to the liquid supply pipe 341 and the liquid discharge pipe 35.

[0048] The rotating mechanism 40 rotates both the holding part 10 and the ring member 31 at a predetermined rotational speed. The rotating mechanism 40 has a drive source (not shown), such as a motor, which rotates the holding part 10 and the ring member 31.

[0049] The collection unit 50 includes a cup 51 and a cup lifting mechanism 52.

[0050] The cup 51 is cylindrical and is positioned to surround the holding portion 10 and the ring member 31. The upper part of the peripheral wall of the cup 51 is inclined radially inward and has an opening that exposes the holding portion 10. The cup 51 collects the processing liquid that has been scattered radially outward from the holding portion 10 due to the rotation of the substrate W. The cup 51 also sends the collected processing liquid to a collection tank (not shown) via piping (not shown).

[0051] The cup lifting mechanism 52 moves the position of the cup 51 in the rotation axis direction of the substrate W. For example, the cup lifting mechanism 52 moves the cup 51 to a lowered position, as shown in Figure 1, where it is lowered to allow loading and unloading of the substrate W, and to an elevated position, as shown in Figure 3, where it is raised to collect the scattered processing liquid.

[0052] The control unit 60 controls each part of the substrate processing apparatus 1. The control unit 60 includes an arithmetic unit (not shown) for executing programs, a storage unit (not shown) for storing various information such as programs and operating conditions, an input unit (not shown) for inputting various information, a display unit (not shown) for displaying various information, and a drive circuit (not shown) for driving each element. Specifically, the control unit 60 controls the pin opening / closing mechanism 14, the supply unit lifting mechanism 23, the ring member lifting mechanism 32, the rotation mechanism 40, the cup lifting mechanism 52, the pumps 214 and 342, the valves 215 and 343, and the heater 222.

[0053] For example, the control unit 60 controls valves 215 and 343 so that the processing liquid flowing through the processing liquid supply pipe 213 and the liquid supply pipe 341 reaches a predetermined flow rate. Preferably, the control unit 60 controls valve 343 so that the flow rate of the etching solution Lp flowing through the first liquid supply pipe 341a is greater than the flow rate of the cleaning solution Lw flowing through the second liquid supply pipe 341b.

[0054] Furthermore, if the processing liquid flowing through the processing liquid supply pipe 213 or liquid supply pipe 341, as detected by the flow meters 216 and 344, falls below a predetermined flow rate, the control unit 60 controls the valves 215 and 343 to adjust the flow rate of the processing liquid supplied to the surface of the substrate W or the flow path 33, thereby ensuring that the predetermined flow rate is met. For example, if the flow rate of the etching solution Lp detected by the flow meter 216 is less than a predetermined flow rate, the control unit 60 controls the valve 215 to increase the flow rate of the etching solution Lp supplied to the surface of the substrate W, thereby ensuring that the predetermined flow rate is met.

[0055] Furthermore, the control unit 60 adjusts the flow rate of at least one of the etching solution Lp and cleaning solution Lw supplied to the flow path 33 by controlling the valve 343 according to the temperature of the ring member 31 detected by the detection unit 36. For example, if the temperature detected by the detection unit 36 ​​during the operation of the substrate processing apparatus 1 is lower than a predetermined temperature, the control unit 60 controls the valve 343 to increase the flow rate of the high-temperature etching solution Lp supplied to the first flow path 33a. Alternatively, it controls the flow rate of the low-temperature cleaning solution Lw supplied to the second flow path 33b to decrease.

[0056] [Operation] The operation of the substrate processing apparatus 1 of this embodiment, as described above, will be explained with reference to the flowchart in Figure 5, in addition to Figures 1 to 4 above. During the operation of the substrate processing apparatus 1, etching solution Lp and cleaning solution Lw are constantly supplied from the processing liquid tank 212 to the flow path 33 provided in the ring member 31 via the liquid supply pipe 341. That is, the ring member 31 is maintained at a predetermined temperature by the etching solution Lp and cleaning solution Lw flowing through the flow path 33 even before the substrate W is introduced.

[0057] First, the supply unit 20 is positioned in standby, the retaining pin 13 is in the open position, the ring member 31 is in the retracted position, and the cup 51 is in the lowered position. Also, by pre-energizing the heater 222 of the heating unit 22, the plate 221 is maintained at, for example, 180°C. In this state, the substrate W is carried between the retaining unit 10 and the supply unit 20 (step S01), and the retaining pin 13 moves from the open position to the closed position, so that the substrate W is held by the retaining unit 10 as shown in Figure 1 (step S02). After that, the cup 51 moves from the lowered position to the raised position by the cup lifting mechanism 52. Also, the ring member lifting mechanism 32 moves the ring member 31 from the retracted position to the approaching position (step S03).

[0058] When the ring member 31 moves to the approach position, the substrate W, the holding part 10, and the ring member 31 are rotated at a predetermined speed by the rotation mechanism 40 (step S04). The rotation speed at this time is, for example, 100 rpm or less. Then, as shown in Figure 3(A), the supply unit 20 moves to the heating position, and the processing liquid supply unit 21 supplies etching liquid Lp to the central region of the surface of the substrate W (step S05). In addition, the etching liquid Lp on the surface of the substrate W is heated by the heating unit 22 provided in the supply unit 20. At this time, the ring member 31 is kept at a predetermined temperature by the etching liquid Lp and cleaning liquid Lw flowing in the flow path 33 beforehand. Therefore, thermal expansion of the ring member 31 caused by rapid heating by the heating unit 22 located at the heating position can be suppressed.

[0059] The supplied etching solution Lp flows from the center of the substrate W toward the outer edge as the substrate W rotates. This spreads the etching solution Lp across the entire surface of the substrate W, and the nitride film formed on the substrate W is removed by the heated etching solution Lp. The etching solution Lp that flows toward the outer edge of the substrate W does not accumulate at the outer edge of the substrate W, but flows onto the surface of the ring member 31, as shown in Figure 4, because the change in flow velocity at the outer edge of the substrate W is reduced by the ring member 31. At this time, the ring member 31 is maintained at a predetermined temperature by the etching solution Lp and cleaning solution Lw in the flow path 33. Therefore, thermal expansion of the ring member 31 caused by rapid heating by the high-temperature etching solution Lp can be suppressed. In addition, because the ring member 31 is maintained at a predetermined temperature, the temperature of the outer edge of the substrate W and the temperature of the etching solution Lp on the outer edge of the substrate W do not decrease easily. Therefore, the processing rate at the outer edge of the substrate W is improved. The etching solution Lp that flows onto the surface of the ring member 31 is then discharged outward from the outer edge of the ring member 31.

[0060] After a predetermined time has elapsed, the processing liquid supply unit 21 stops supplying etching liquid Lp to the substrate W (step S06). After the supply of etching liquid Lp is stopped, the ring member lifting mechanism 32 moves the ring member 31, which is in the approach position, to the retracted position (step S07). This prevents the etching liquid Lp remaining on the substrate W, or the cleaning liquid Lw supplied to the surface of the substrate W and spread to the outer edge of the substrate W (described later), from being heated by the radiant heat of the ring member 31, thereby preventing unintended etching from occurring at the outer edge of the substrate W. In addition, any etching liquid Lp remaining on the bevel portion of the substrate W after the etching process can be washed away by the cleaning liquid Lw during the cleaning process.

[0061] Subsequently, as shown in Figure 3(B), the processing liquid supply unit 21 supplies cleaning liquid Lw to the central region of the substrate W surface (step S08). The supplied cleaning liquid Lw flows from the central region of the substrate W toward the outer edge as the substrate W rotates. This washes away the etching liquid Lp from the surface of the substrate W. The rotation speed at this time is, for example, about 150 rpm to 300 rpm. In addition, the ring member 31 is kept at a predetermined temperature by the etching liquid Lp and cleaning liquid Lw in the flow path 33. Therefore, thermal contraction of the ring member 31 caused by rapid cooling by the low-temperature cleaning liquid Lw can be suppressed. After a predetermined time has elapsed, the processing liquid supply unit 21 stops supplying cleaning liquid Lw, and the supply unit 20 moves to the standby position (step S09).

[0062] After the supply of cleaning solution Lw is stopped, the rotation of the substrate W and ring member 31 is stopped by the rotation mechanism 40 (step S10). Then, the cup 51 moves from the raised position to the lowered position. Also, the retaining pin 13 moves from the closed position to the open position (step S11). Then, the substrate W is discharged (step S12).

[0063] [effect] As described above, the substrate processing apparatus 1 of this embodiment includes a holding unit 10 that holds and rotates the substrate W, a processing liquid supply unit 21 that supplies a first processing liquid and a second processing liquid having a lower temperature than the first processing liquid to the substrate W, an annular ring member 31 having an inner periphery shaped to follow the outer periphery of the substrate W and integrally formed over its entire circumference, and a flow path 33 through which liquid flows in the circumferential direction, and a liquid supply unit 34 that supplies liquid to the flow path 33. The liquid supply unit 34 supplies liquid to the flow path 33, thereby adjusting the temperature of the ring member 31 to a predetermined temperature that is lower than the temperature of the first processing liquid and higher than the temperature of the second processing liquid. In other words, by supplying liquid to the flow path 33 provided in the circumferential direction of the ring member 31 by the liquid supply unit 34, the ring member 31 can maintain a predetermined temperature.

[0064] This makes it possible to suppress the rapid heating and cooling of the ring member 31 caused by the etching solution Lp and cleaning solution Lw supplied to the substrate W spreading to the outer edge of the substrate W, or by the heating unit 22 being located at the heating position. In other words, it is possible to suppress the thermal expansion and contraction of the ring member 31. As a result, the ring member 31 can come into uniform proximity to the outer edge of the substrate W, and the accumulation of etching solution Lp at the outer edge of the substrate W can be suppressed. Thus, the uniformity of the processing rate within the plane of the substrate W can be improved.

[0065] The flow path 33 has a first flow path 33a through which a first liquid at a temperature higher than a predetermined temperature flows, and a second flow path 33b through which a second liquid at a temperature lower than a predetermined temperature flows. The substrate processing apparatus 1 also includes a control unit 60 that adjusts the temperature of the ring member 31 to a predetermined temperature by controlling the flow rate of the first liquid supplied to the first flow path 33a and the flow rate of the second liquid supplied to the second flow path 33b. In this embodiment, the first liquid is an etching solution Lp and the second liquid is a cleaning solution Lw. As a result, the ring member 31 can maintain a predetermined temperature and thermal expansion and contraction of the ring member 31 can be suppressed.

[0066] The ring portion 30 includes a detection unit 36 ​​for detecting the temperature of the ring member 31. The control unit 60 controls at least one of the flow rate of the etching solution Lp supplied to the first flow path 33a and the flow rate of the cleaning solution Lw supplied to the second flow path 33b, according to the temperature detected by the detection unit 36. For example, during substrate processing, if the temperature of the ring member 31 detected by the detection unit 36 ​​is lower than a predetermined temperature, the control unit 60 controls the flow rate of the etching solution Lp supplied to the first flow path 33a to increase, or controls the flow rate of the cleaning solution Lw supplied to the second flow path 33b to decrease. This allows the temperature of the ring member 31 to be adjusted to the predetermined temperature based on the temperature detected by the detection unit 36, even if the temperature of the ring member 31 deviates from the predetermined temperature. Therefore, thermal expansion and contraction of the ring member 31 can be further suppressed.

[0067] The control unit 60 controls the flow rate of the etching solution Lp supplied to the first channel 33a to be greater than the flow rate of the cleaning solution Lw supplied to the second channel 33b. As a result, the temperature of the ring member 31 is kept relatively high, which heats the outer edge of the substrate W and the etching solution Lp on the surface of the substrate W, thereby improving the processing rate of the outer edge of the substrate W during the etching process.

[0068] The substrate processing apparatus 1 includes a ring member lifting mechanism 32 that allows the ring member 31 to be raised and lowered. The ring member lifting mechanism 32 moves the ring member 31 between an approach position where the inner edge of the ring member 31 is close to the outer edge of the substrate W, and a retracted position where the inner edge of the ring member 31 is retracted from the outer edge of the substrate W. For example, if the ring member 31, which is kept at a relatively high temperature by the etching solution Lp and cleaning solution Lw flowing through the flow path 33, remains in the approach position during the cleaning process, the outer edge of the substrate W will be heated. As the cleaning solution Lw flows from the central region of the substrate W toward the heated outer edge of the substrate W, the outer edge of the substrate W is etched. Thus, even if the entire surface of the substrate W is kept warm by the heating unit 22 and the ring member 31 during the etching process, only the outer edge of the substrate W is heated during the cleaning process, which may result in an uneven processing rate within the surface of the substrate W.

[0069] Therefore, in this embodiment, the ring member 31 is moved to an approach position during etching and to a retracted position during cleaning. In the approach position, the ring member 31, which is kept at a predetermined temperature, can uniformly approach the outer edge of the substrate W, suppressing the accumulation of etching solution Lp at the outer edge of the substrate W. Thus, the uniformity of the processing rate within the plane of the substrate W can be improved. In the retracted position, the etching solution Lp remaining on the substrate W, or the cleaning solution Lw supplied to the surface of the substrate W and spreading to the outer edge of the substrate W, is heated by the radiant heat of the ring member 31, suppressing unintended etching at the outer edge of the substrate W. Furthermore, the etching solution Lp remaining on the bevel portion of the substrate W after etching can be washed away by the cleaning solution Lw during the cleaning process. Thus, the uniformity of the processing rate within the plane of the substrate W can be improved.

[0070] The substrate processing apparatus 1 includes a heating unit 22 having a diameter larger than the outer diameter of the substrate W and facing the surface of the substrate W. The heating unit 22 heats the etching solution Lp supplied to the surface of the substrate W. This promotes the reaction between the etching solution Lp and the removal area, thereby improving the processing rate within the surface of the substrate W.

[0071] The first liquid supplied by the liquid supply unit 34 to the first flow path 33a can be the first processing liquid. This eliminates the need to provide a separate tank for storing the first liquid supplied to the first flow path 33a, in addition to the processing liquid tank 212, thus simplifying the configuration and saving space.

[0072] [Differentiation] Hereinafter, modified examples of the substrate processing apparatus 1 according to the embodiment of the present invention will be described.

[0073] The liquid supplied to the flow path 33 does not have to be the processing liquid supplied to the substrate W, as long as it can maintain the ring member 31 at a predetermined temperature. For example, a liquid at a temperature equivalent to the predetermined temperature of the ring member 31 may be supplied.

[0074] The flow rate of the liquid supplied to the channel 33 does not need to be controlled according to the temperature of the ring member 31, as long as the ring member 31 can be kept at a predetermined temperature. For example, the liquid may be supplied to the channel 33 at an optimal flow rate determined in advance through experiments or simulations.

[0075] The flow channels 33 provided in the ring member 31 do not necessarily have to be multiple, as long as they can maintain the ring member 31 at a predetermined temperature. For example, one flow channel 33 may be supplied with one type of liquid or etching solution Lp at or above a predetermined temperature, and the predetermined temperature may be maintained by controlling the flow rate. Alternatively, a high-temperature liquid and a low-temperature liquid may be selectively supplied to one flow channel 33 to achieve a predetermined temperature. Furthermore, a mixture of a high-temperature liquid and a low-temperature liquid may be supplied to one flow channel 33 to achieve a predetermined temperature.

[0076] The flow path 33 provided in the ring member 31 does not have to be inside the ring member 31. For example, it may be provided so as to be in contact with the back surface of the ring member 31, thereby maintaining the ring member 31 at a predetermined temperature.

[0077] The flow path 33 provided in the ring member 31 does not need to be provided around the entire circumference of the ring member 31, as long as it can maintain the entire ring member 31 at a predetermined temperature. For example, the flow path 33 may be provided only around half the circumference of the ring member 31.

[0078] The shape of the flow path 33 provided in the ring member 31 does not have to be similar to the shape of the outer circumference of the ring member 31. For example, the flow path 33 may have a meandering shape.

[0079] The supply to the flow path 33 provided in the ring member 31 is not limited to a method using a rotary joint. In other words, it is sufficient to supply and discharge the processing liquid into the flow path 33 without hindering the rotation of the mounting part 11.

[0080] The processing method of the substrate processing apparatus 1 and the processing liquid supplied to the substrate W are not limited to those exemplified above. The substrate W and film to be processed are also not limited to those exemplified above.

[0081] [Other embodiments] Although embodiments and modifications of the present invention have been described above, these embodiments and modifications are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the invention described in the claims. [Explanation of symbols]

[0082] 1. Substrate processing apparatus 10 Holding part 11 Mounting section 11a side 12 shafts 13 Retaining pins 14-pin opening / closing mechanism 20 Supply section 21 Processing liquid supply unit 22 Heating section 23. Supply Unit Lifting Mechanism 30 Ring section 31 Ring member 31a Cover section 31b Notch 31c hole 32 Ring Member Lifting Mechanism 33 channels 33a First channel 33b Second channel 34 Liquid supply section 35 Liquid drain pipe 35a First liquid discharge pipe 35b Second liquid discharge pipe 36 Detection unit 40 Rotation Mechanism 50 Recovery Section 51 cups 52 Cup Lifting Mechanism 60 Control Unit 211 Processing liquid nozzle 211a First processing liquid nozzle 211b Second processing liquid nozzle 212 Processing liquid tank 212a First processing liquid tank 212b Second processing tank 213 Processing liquid supply pipe 213a First processing liquid supply pipe 213b Second processing liquid supply pipe 214 Pump 215 Valve 216 Flow meter 221 Plate 221a Supply port 222 Heater 222a Through hole 341 Liquid supply pipe 341a First liquid supply pipe 341b Second liquid supply pipe 342 pumps 343 Valve 344 Flow meter

Claims

1. A holding part that holds the substrate and makes it rotatable, A processing liquid supply unit that supplies a first processing liquid and a second processing liquid having a lower temperature than the first processing liquid to the substrate, An annular ring member having an inner periphery shaped to follow the outer periphery of the substrate, and integrally formed over its entire circumference, the ring member having a channel through which liquid flows in the circumferential direction, A liquid supply unit that supplies the liquid to the aforementioned flow path, Equipped with, A substrate processing apparatus in which the liquid supply unit supplies the liquid to the flow path, thereby adjusting the temperature of the ring member to a predetermined temperature set to be lower than the temperature of the first processing liquid and higher than the temperature of the second processing liquid.

2. The flow path comprises a first flow path through which a first liquid at a temperature higher than the predetermined temperature flows, and a second flow path through which a second liquid at a temperature lower than the predetermined temperature flows. The substrate processing apparatus according to claim 1, wherein the liquid supply unit adjusts the temperature of the ring member to the predetermined temperature by supplying the first liquid to the first flow path and the second liquid to the second flow path.

3. The liquid supply unit further includes a control unit that controls the flow rate of the first liquid supplied to the first flow path and the flow rate of the second liquid supplied to the second flow path. The ring member has a detection unit for detecting the temperature of the ring member, The substrate processing apparatus according to claim 2, wherein the control unit controls at least one of the flow rate of the first liquid supplied to the first flow path and the flow rate of the second liquid supplied to the second flow path according to the temperature of the ring member detected by the detection unit.

4. The liquid supply unit further includes a control unit that controls the flow rate of the first liquid supplied to the first flow path and the flow rate of the second liquid supplied to the second flow path. The substrate processing apparatus according to claim 2, wherein the control unit controls the flow rate of the first liquid supplied to the first flow path to be greater than the flow rate of the second liquid supplied to the second flow path.

5. The ring member is further provided with a ring member lifting mechanism that allows the ring member to be raised and lowered. The substrate processing apparatus according to claim 1, wherein the ring member lifting mechanism moves the ring member between an approach position in which the inner peripheral edge of the ring member is close to the outer peripheral edge of the substrate and a retracted position in which the inner peripheral edge of the ring member is retracted from the outer peripheral edge of the substrate.

6. The substrate processing apparatus according to claim 1, further comprising a heating section having a diameter larger than the outer diameter of the substrate and facing the surface of the substrate.

7. The substrate processing apparatus according to claim 1, wherein the liquid supplied by the liquid supply unit to the flow path is the first processing liquid.

8. The substrate processing apparatus according to claim 2, wherein the first liquid supplied by the liquid supply unit to the first flow path is the first processing liquid.

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