Washing device

Abstract

To provide a cleaning device that can achieve effective cleaning without leaving grinding debris on the back surface of the wafer. [Solution] The system comprises a spinner table 114 that holds and rotates a wafer WA, a cleaning nozzle that supplies cleaning water to the dirty surface of the wafer held by the spinner table 114 and oscillates, and a control means 100. The control means 100 includes a rotation speed changing unit 102 that changes the rotation speed of the spinner table 114 in stages, an oscillating speed changing unit 104 that changes the oscillating speed of the cleaning nozzle in stages, a combination generation unit 106 that generates combinations of the gradually changing rotation speed and the gradually changing oscillating speed, and a recording unit 108 that records combinations in which the wafer WA is effectively cleaned.

Description

Technical Field

[0001] The present invention relates to a cleaning device for cleaning the dirt on a wafer.

Background Art

[0002] A wafer on which a plurality of devices such as ICs and LSIs are partitioned by a division planned line and formed on the surface is ground on the back surface by a grinding device to form a desired thickness, and then divided into individual device chips by a dicing device, and is used in electrical devices such as mobile phones and personal computers.

[0003] The grinding device includes a chuck table for holding a wafer, grinding means rotatably provided with a grinding wheel for grinding the wafer held on the chuck table, and a cleaning device for cleaning the wafer after grinding, and can finish the wafer to a desired thickness (for example, refer to Patent Document 1).

[0004] In addition, the above cleaning device includes a spinner table for holding and rotating a wafer, and a cleaning nozzle for supplying and swinging cleaning water to the back surface of the wafer held on the spinner table, and is cleaning the wafer after grinding.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] However, when the cleaning by the above-described cleaning device is not appropriate, dust such as grinding chips may remain on the back surface of the cleaned wafer, and the quality of the device chips after division may be deteriorated by sending the wafer with the dust attached to the subsequent process.

[0007] This invention has been made in view of the above facts, and its main technical problem is to provide a cleaning device that can achieve effective cleaning without leaving any debris on the back surface of the wafer. [Means for solving the problem]

[0008] To solve the above-mentioned main technical problems, the present invention provides a cleaning apparatus for cleaning contaminants from a wafer, comprising: a spinner table that holds and rotates a wafer; a cleaning nozzle that supplies cleaning water to the contaminant surface of the wafer held on the spinner table and oscillates; and a control means, wherein the control means comprises: a rotation speed changing unit that changes the rotation speed of the spinner table in stages; an oscillation speed changing unit that changes the oscillation speed of the cleaning nozzle in stages; a combination generating unit that generates combinations of the rotation speed and the oscillation speed that change in stages; and a recording unit that records combinations in which the wafer is effectively cleaned.

[0009] Preferably, the system includes a means for confirming the cleaning effect of the wafer, and the recording unit stores data confirming the cleaning effect of the wafer by the confirmation means for each combination generated by the combination generation unit. Furthermore, it is preferable that the confirmation means is a camera, and that the cleaning effect of the wafer is confirmed by image processing. [Effects of the Invention]

[0010] The cleaning apparatus of the present invention is a cleaning apparatus for cleaning contaminants from a wafer, comprising a spinner table that holds and rotates a wafer, a cleaning nozzle that supplies cleaning water to the contaminant surface of the wafer held on the spinner table and oscillates, and a control means, the control means comprising a rotation speed change unit that changes the rotation speed of the spinner table in stages, an oscillation speed change unit that changes the oscillation speed of the cleaning nozzle in stages, a combination generation unit that generates combinations of the rotation speed and the oscillation speed that change in stages, and a recording unit that records combinations in which the wafer is effectively cleaned, so that it is possible to set cleaning conditions for the cleaning apparatus that result in effective cleaning, the amount of contaminants (e.g., grinding debris, etc.) remaining on the processed surface of the wafer cleaned by the cleaning apparatus is reduced, and the problem of degrading the quality of the device is resolved. [Brief explanation of the drawing]

[0011] [Figure 1] This is an overall perspective view of a grinding apparatus to which the cleaning device of this embodiment is applied. [Figure 2] Figure 1 is an enlarged perspective view of the cleaning device installed in the grinding apparatus shown. [Figure 3] Figure 1 is a perspective view of a wafer being processed by the grinding machine shown. [Figure 4] Figure 1 is an enlarged perspective view showing the grinding process performed by the grinding apparatus shown. [Figure 5] (a) A perspective view showing how wafers transported to the cleaning apparatus shown in Figure 2 are placed on the spinner table. (b) A perspective view showing how wafers are cleaned in the cleaning apparatus shown in (a). [Figure 6] Figure 5 is a perspective view showing how the cleaning effect of a wafer cleaned by the cleaning device is confirmed by a confirmation means. [Modes for carrying out the invention]

[0012] Hereinafter, embodiments of a cleaning apparatus configured according to the present invention will be described in detail with reference to the attached drawings.

[0013] Figure 1 shows a grinding apparatus 1 equipped with the cleaning device 11 of this embodiment, which will be described later. The grinding apparatus 1 consists of a chuck table 6 for suction and holding a wafer W, and two grinding units for grinding the wafer W held on the chuck table 6. The illustrated grinding apparatus 1 has three chuck tables 6 and includes a rough grinding unit 3 for rough grinding the back surface of the wafer W, and a finish grinding unit 4 for finish grinding the back surface of the wafer W that has been roughly ground by the rough grinding unit 3.

[0014] The rough grinding unit 3 installed in the illustrated grinding apparatus 1 comprises a rough grinding wheel 32 on which a plurality of grinding wheels 31 are arranged in an annular shape on its lower surface, and an electric motor 34 for rotating the rough grinding wheel 32. Similarly, the finish grinding unit 4 comprises a finish grinding wheel 42 on which a plurality of grinding wheels 41 are arranged in an annular shape on its lower surface, and an electric motor 44 for rotating the finish grinding wheel 42.

[0015] The illustrated grinding apparatus 1 includes a grinding feed mechanism 35 provided as a lifting means for raising and lowering the rough grinding unit 3 in the vertical direction (Z-axis direction), and a grinding feed mechanism 45 provided as a lifting means for raising and lowering the finish grinding unit 4 in the vertical direction (Z-axis direction).

[0016] The grinding device 1 includes a turntable 5 disposed on the front side of a support wall 21 erected from the back side of the device housing 2 so as to be substantially flush with the upper surface of the device housing 2. The turntable 5 is formed in a relatively large-diameter disk shape and is appropriately rotated in the direction indicated by arrow R1 by a rotation drive mechanism (not shown) in the drain pan 20 on the upper surface of the device housing 2. The three chuck tables 6 described above are arranged on this turntable 5 at equal intervals with an angle of 120 degrees each. Each chuck table 6 is provided with rotation drive means (not shown) and is configured to be rotatable in the direction indicated by arrow R2. The holding surface of this chuck table 6 is formed of a breathable member and is connected to a suction means (not shown), and by operating the suction means, the wafer W, which is the workpiece, can be suction-held on the chuck table 6.

[0017] The three chuck tables 6 arranged on the turntable 5 are sequentially moved to the workpiece loading / unloading area A → rough grinding area B → finish grinding area C → workpiece loading / unloading area A as the turntable 5 is rotated in the direction indicated by arrow R1. Near the workpiece loading / discharge area A in the drain pan 20, a cleaning water supply nozzle 10 for supplying cleaning water to the upper surface of the chuck table 6 positioned in the workpiece loading / discharge area A is arranged.

[0018] The grinding device 1 includes a first cassette 7 disposed on one side of the workpiece loading / unloading area A for accommodating a plurality of wafers W before grinding, a second cassette 8 disposed on the other side of the workpiece loading / unloading area A for accommodating a plurality of wafers W after grinding, a temporary placement table 9 disposed between the first cassette 7 and the workpiece loading / unloading area A for centering the wafer W, a cleaning device 11 configured based on the present invention disposed between the workpiece loading / unloading area A and the second cassette 8, a workpiece loading / unloading means 12 for unloading the wafer W accommodated in the first cassette 7 onto the temporary placement table 9 and accommodating the wafer W cleaned by the cleaning device 11 into the second cassette 8, a first transfer means 13 for transferring the wafer W held on the temporary placement table 9 onto the chuck table 6 positioned in the workpiece loading / unloading area A, and a second transfer means 14 for transferring the wafer W after grinding placed on the chuck table 6 positioned in the workpiece loading / unloading area A to the cleaning device 11.

[0019] A control means 100 is disposed in the illustrated grinding device 1. The control means 100 includes a central processing unit (CPU) that performs arithmetic processing according to a control program, a read-only memory (ROM) that stores the control program and the like, a readable and writable random access memory (RAM) as storage means for storing arithmetic results and the like, and an input interface and an output interface (all not shown in the figure). By the control means 100 configured in this way, each operating part of the grinding device 1 described above is controlled, and the control of the cleaning device 11 configured based on the present invention is implemented (to be described in detail later). Note that the illustrated control means 一百 is described outside the mounting housing 2 for convenience of explanation, but in reality, it is accommodated inside the device housing 2.

[0020] Figure 2 shows a magnified view of the cleaning device 11 described above. The cleaning device 11 includes a spinner table 114 that sucks and holds the wafer W and rotates in the direction indicated by arrow R3, and a cleaning nozzle 116 that is driven by a driving means (not shown) and swings in the direction indicated by arrow R4, while supplying cleaning water to the soiled surface of the wafer W held on the spinner table 114.

[0021] When cleaning a wafer W with the cleaning device 11, the cleaning cover 112 covering the top surface of the cleaning device 11, the spinner table 114 that holds the wafer W by suction, and the cleaning nozzle 116 descend in the direction indicated by arrow R5 in the Z-axis direction, and the wafer W is cleaned in the cleaning space 110 sealed by the cleaning cover 112. The cleaning device 11 is also equipped with an air nozzle that is oscillating on the spinner table 114 and blows air to dry the cleaned surface of the wafer W after cleaning, but this is omitted in the illustrated embodiment.

[0022] The control means 100 includes a rotation speed change unit 102 that changes the rotation speed of the spinner table 114 in steps, an oscillation speed change unit 104 that changes the oscillation speed of the cleaning nozzle 116 in steps, a combination generation unit 106 that generates combinations of the rotation speed of the spinner table 114 and the oscillation speed of the cleaning nozzle 116, and a recording unit 108 that records combinations in which wafer cleaning is effectively performed.

[0023] The grinding apparatus 1 to which the cleaning device 11 of this embodiment is applied has a configuration that is generally as described above. The embodiment of cutting by the grinding apparatus 1, and the functions and effects of the cleaning device 11 of this embodiment will be described below.

[0024] The left side of Figure 3 shows the wafer W to be processed by the grinding apparatus 1 described above. The wafer W is formed by dividing multiple devices D on its surface Wa with dividing lines WL, and a protective tape T is attached to the surface Wa to form a single unit. When the wafer W is ground by the grinding apparatus 1 described above, it is inverted as shown in the lower right of Figure 3, so that the back surface Wb of the wafer W, which is the grinding surface, faces upward.

[0025] When grinding a wafer W using the grinding apparatus 1 shown in Figure 1, the wafer W housed in the first cassette 7 is unloaded from the first cassette 7 by the workpiece loading / unloading means 12. Next, the wafer W is loaded onto the temporary placement table 9 for centering, and the first transport means 13 is activated to place the wafer W with its back surface Wb facing upwards on the chuck table 6 located in the workpiece loading / unloading area A, and then it is held in place by suction.

[0026] Once the wafer W is held by suction on the chuck table 6 located in the workpiece loading / unloading area A, the turntable 5 of the grinding device 1 is rotated 120 degrees in the direction indicated by arrow R1 in Figure 1 to position the chuck table 6 holding the wafer W directly below the rough grinding unit 3. Next, as shown in Figure 4, the chuck table 6 is rotated at, for example, 300 rpm in the direction indicated by arrow R2, while the rotation axis 36 of the rough grinding unit 3 is rotated at, for example, 6000 rpm in the direction indicated by arrow R6. Then, the grinding feed mechanism 35 described above is activated to bring the grinding wheel 31 into contact with the back surface Wb of the wafer W, and the grinding wheel 32 is fed at, for example, a grinding feed speed of 1.0 μm / second in the direction indicated by arrow R7 in the figure. At this time, grinding water is supplied to the back surface Wb of the wafer W from the lower surface of the rough grinding wheel 32 via the rotation axis 36. Simultaneously, grinding can be carried out while measuring the thickness of the wafer W using a contact-type measuring gauge (not shown), and the back surface Wb of the wafer W is roughly ground to the desired thickness for rough grinding, thus completing the rough grinding process.

[0027] As described above, once the rough grinding is complete, the turntable 5 is rotated another 120 degrees in the direction indicated by arrow R1 in Figure 1 to move the chuck table 6 directly below the finish grinding unit 4. Once the chuck table 6 is moved directly below the finish grinding unit 4, the chuck table 6 is rotated at, for example, 300 rpm while the finish grinding wheel 42 of the finish grinding unit 4 is rotated at, for example, 6000 rpm. Then, the grinding feed mechanism 45 of the finish grinding unit 4 is activated to bring the grinding wheel 41 into contact with the back surface Wb of the wafer W, and the finish grinding wheel 42 is fed perpendicular to the chuck table 6 at, for example, a grinding feed speed of 0.1 μm / second. At this time, grinding water is supplied from the bottom surface of the finish grinding wheel 42 to the grinding surface, i.e., the back surface Wb, of the wafer W. Simultaneously, grinding can be carried out while measuring the thickness of the wafer W using a contact-type or non-contact-type measuring gauge (not shown). The back surface Wb of the wafer W is ground to the desired thickness for the finish grinding, completing the finish grinding process, and thus completing the grinding process consisting of the rough grinding and this finish grinding described above. Note that the finish grinding process by the finish grinding unit 4 is substantially the same as the rough grinding process shown in Figure 4, except that the coarseness of the grinding wheel and the grinding feed speed of the grinding feed mechanism are different from those of the rough grinding unit 3, so it is not shown in the illustration.

[0028] Once the grinding process described above is complete, the turntable 5 is rotated another 120 degrees in the direction indicated by arrow R1 in Figure 1 to position the chuck table 6 in the workpiece loading / unloading area A, and pre-cleaning is performed by supplying cleaning water from the cleaning water supply nozzle 10 to roughly remove grinding debris. The wafer W positioned in the workpiece loading / unloading area A is then transported to the cleaning device 11 by the second transport means 14, with its back surface Wb side being sucked up. As shown in Figure 5(a), it is placed on the holding surface 114a of the spinner table 114, and a suction means (not shown) connected via a frame 114b surrounding the holding surface 114a is activated to generate negative pressure on the holding surface 114a, thereby holding the wafer W by suction. Next, as described above, the cleaning device 11 is lowered to form a cleaning space 110 sealed by the cleaning cover 112, and as shown in Figure 5(b), the spinner table 114 is rotated at a predetermined speed in the direction indicated by arrow R3, and the tip 116a of the cleaning nozzle 116 is positioned in the center of the spinner table 114. Then, cleaning water L is supplied from the tip 116a while oscillating at a predetermined oscillation speed in the direction indicated by arrow R4 in the figure. The amount of cleaning water L supplied at this time is, for example, 3 L / min.

[0029] Here, the inventors of the present invention have found that when the rotational speed of the spinner table 114 and the oscillation speed of the cleaning nozzle 116 in the cleaning apparatus 11 are changed, the cleaning effect when cleaning the wafer W also changes, and that when cleaning the wafer W is performed by the cleaning apparatus 11, the rotational speed of the spinner table 114 and the oscillation speed of the cleaning nozzle 116 should be set to a combination that effectively cleans the wafer W.

[0030] As described above, the control means 100 of the cleaning apparatus 11 of this embodiment includes a rotation speed change unit 102 that changes the rotation speed of the spinner table 114 in steps, and an oscillation speed change unit 104 that changes the oscillation speed of the cleaning nozzle 116 in steps, as well as a combination generation unit 106 that generates combinations of the rotation speed and the oscillation speed, and a recording unit 108 that records the combination of the rotation speed and the oscillation speed that effectively cleans the wafer W.

[0031] The rotation speed change unit 102 described above makes it possible to change the rotation speed (rpm) of the spinner table 114 in the direction indicated by arrow R3 in Figure 5(b) in steps, for example, within the range of 100 rpm to 3000 rpm. Changing the rotation speed of the spinner table 114 in steps means changing the rotation speed of the electric motor (not shown) that drives the spinner table 114, for example, as follows. Note that the rotation speed when changing the rotation speed of the spinner table 114 in steps can be determined arbitrarily, and the rotation speeds shown below are merely examples.

[0032] <Gradually changing rotation speed (rpm)> 100→200→300→400→500→600→700→800→900→1000→1500→2000→2500→3000

[0033] Furthermore, the oscillation speed changing unit 104 makes it possible to stepwise change the oscillation speed (degrees / second) when the cleaning nozzle 116 is oscillated in the direction indicated by arrow R4 in Figure 5(b), for example, within the range of 5 degrees / second to 60 degrees / second. Stepwise change of the oscillation speed of the cleaning nozzle 116 is carried out by adjusting the driving means (e.g., electric motor) that oscillates the cleaning nozzle 116, and can be changed as follows, for example. Note that the oscillation speed when stepwise change of the oscillation speed of the cleaning nozzle 116 can be determined arbitrarily, and the oscillation speeds shown below are merely examples.

[0034] <Gradually changing oscillation speed (degrees / second)> 5→10→15→20→25→30→35→40→45→50→55→60

[0035] In order to find the combination of rotational speed of the spinner table 114 and oscillation speed of the cleaning nozzle 116 of the cleaning device 11 that effectively cleans the ground surface Wb of the ground wafer W, the operator of the cleaning device 11 performs the cleaning effect verification procedure described below in advance of grinding the workpiece, which is the wafer W.

[0036] When performing the cleaning effect verification procedure, the operator first prepares a dummy wafer WA made of the same material as the wafer W described above (see Figure 6). Tape T, the same as that used when grinding the wafer W described above, is attached to one side of the dummy wafer WA. Next, the other side of the dummy wafer WA (upper surface WAa) is placed on the chuck table 6 located in the workpiece loading / unloading area A of the grinding apparatus 1 and held in place by suction. Rough grinding by the rough grinding unit 3 and finish grinding by the finish grinding unit 4 are then performed on the upper surface WAa of the dummy wafer WA, the same process performed on the wafer W described above. The grinding conditions performed at this time are set in accordance with the grinding conditions applied to the actual wafer W described above.

[0037] After performing grinding operations on the dummy wafer WA, including the rough grinding and finish grinding operations described above, the dummy wafer WA, held on the chuck table 6 located in the workpiece loading / unloading area A, is transported to the cleaning device 11, where it is placed on the spinner table 114 with the ground surface WAa facing upwards and held in place by suction. Then, the spinner table 114 and the cleaning nozzle 116 are operated by the rotation speed of the spinner table 114 and the oscillation speed of the cleaning nozzle 116 generated by the combination generation unit 106 of the control means 100, to clean the dummy wafer WA. Here, the combinations of the rotational speed of the spinner table 114 and the oscillation speed of the cleaning nozzle 116 generated by the combination generation unit 106 of the control means 100 are generated in multiple quantities, for example, as shown below. First, cleaning of the dummy wafer WA is performed based on the cleaning conditions shown in combination No. 1 (rotational speed of the spinner table 114: 100 rpm, oscillation speed of the cleaning nozzle 116: 5 degrees / second). At this time, the supply amount of cleaning water L supplied from the cleaning nozzle 116 is 3 L / min.

[0038] <Example of a combination generated by the combination generation unit 106> Combination No. Rotational speed (rpm) Oscillation speed (degrees / second) 1 100 5 2 100 10 3 100 15 4 100 20 ... (omitted) ... 112 1000 20 113 1000 25 ... (omitted) ... 166 3000 50 167 3000 55 168 3000 60

[0039] If the upper surface WAa of the dummy wafer WA is cleaned using the cleaning conditions shown in combination No. 1 above, the cleaning effect on the dummy wafer WA can be confirmed by the confirmation means 50 shown in Figure 6. The confirmation means 50 includes, for example, a camera 52, which is omitted in Figure 1, but is positioned near the cleaning cover 112 that constitutes the cleaning device 11, and is positioned above the spinner table 114 after cleaning by the cleaning device 11 is completed. The information of the upper surface WAa of the dummy wafer WA captured by the camera 52 is processed as an image, for example, 1 cm 2 The number of remaining debris (grinding shavings) is counted and recorded in the recording unit 108. The number of debris recorded at this time serves as an indicator of the cleaning effect in this embodiment. After cleaning with the cleaning nozzle 116 described above is completed, the upper surface WAa of the dummy wafer WA is dried with an air nozzle (not shown).

[0040] As described above, once cleaning in the cleaning device 11 is complete, the workpiece loading / unloading means 12 and the first transport means 13 are activated to unload the dummy wafer WA from the cleaning device 11 and transport it again to the chuck table 6 located in the workpiece loading / unloading area A via the temporary storage table 9. Next, rough grinding is performed by the rough grinding unit 3 and finish grinding is performed by the finish grinding unit 4, and then the wafer is transported back to the cleaning device 11. At this point, the upper surface WAa of the dummy wafer WA transported to the cleaning device 11 is cleaned using the following combination No. 2 generated by the combination generation unit 106, namely, a rotation speed of 100 rpm for the spinner table 114 and an oscillation speed of 10 degrees / second for the cleaning nozzle 116. The cleaning effect (number of debris particles / 1cm) resulting from cleaning under the cleaning conditions shown in combination No. 2 is then measured. 2The number of debris particles is checked by the checking means 50 described above, and the number of debris particles checked is recorded in the recording unit 108 described above as an indicator of the cleaning effect. Then, according to the combinations set from combination No. 3 onwards described above, the cleaning by the cleaning device 11 after grinding, the checking effect of the cleaning by the checking means 50, and the recording to the recording unit 108 are repeated, and the recording unit 108 accumulates data in the recording unit 108 that confirms the cleaning effect corresponding to, for example, the following combinations of cleaning conditions No. 1 to No. 168.

[0041] <Cleaning effect recorded in recording unit 108> Combination No. Cleaning effect (number of debris / 1cm) 2 ) 1 12 2 11 3 11 4 10 ... (omitted) ... 112 0 (Passed) 113 0 (Passed) ... (omitted) ... 166 3 167 3 168 4

[0042] The recording unit 108 records the combination of the rotation speed of the spinner table 114 and the oscillation speed of the cleaning nozzle 116, indicating that the dummy wafer W has been effectively cleaned by the verification means 50 described above. More specifically, in the above embodiment, cleaning with the combinations shown in combination No. 112 (rotation speed 1000 rpm, oscillation speed 20 degrees / second) and combination No. 113 (rotation speed 1000 rpm, oscillation speed 25 degrees / second) results in 0 remaining debris particles per 1cm. 2 The combination No. 112 and No. 113 are confirmed to have been cleaned most effectively, and the information "passed" is assigned to them and recorded in the recording unit 108. When grinding is performed on a wafer W made of the same material as the dummy wafer WA, either combination No. 112 or No. 113, which has been confirmed to clean the wafer W most effectively, is set as the cleaning condition for the wafer W by the cleaning device 11 after grinding.

[0043] In the above-described embodiment, the amount of cleaning water L supplied from the cleaning nozzle 116 in the cleaning device 11 was set to 3 L / min, and the cleaning effect performed in the cleaning device 11 was confirmed and recorded in the recording unit 108. However, in addition to confirming the cleaning effect by setting the amount of cleaning water supply to 3 L / min, the amount of cleaning water L supply may also be changed (for example, 4 L / min, 2 L / min), and the cleaning effect on the dummy wafer WA described above may be confirmed, and the cleaning effect may be recorded in the recording unit 108 for each amount of cleaning water L supplied. Furthermore, in the above-described embodiment, grinding was performed using a dummy wafer WA, and the cleaning effect was confirmed by performing cleaning based on the combination of cleaning conditions generated by the combination generation unit 106. However, the confirmation of the cleaning effect is not necessarily limited to using a dummy wafer WA. For example, the confirmation of the cleaning effect may be performed using a wafer W on which the actual product device D is formed, as shown in Figure 3.

[0044] According to the embodiment described above, it becomes possible to set cleaning conditions for the cleaning device 11 that result in effective cleaning, reducing the amount of debris (e.g., grinding dust) remaining on the grinding surface of the wafer W cleaned by the cleaning device 11, thus eliminating the problem of degrading the quality of the device.

[0045] Furthermore, the cleaning device according to the present invention is not limited to the grinding apparatus 1 shown in Figure 1. For example, it may be a grinding apparatus equipped with only one chuck table, or it may be applied to a cutting apparatus or laser processing apparatus that requires cleaning of wafers after processing. Moreover, the cleaning device of the present invention may be independent of the above-mentioned processing apparatus. [Explanation of Symbols]

[0046] 1: Grinding device 2: Device housing 3: Rough grinding unit 31: Grinding wheel 32: Grinding Wheel 34: Electric motor 35: Grinding feed mechanism 4: Finishing grinding unit 41: Grinding wheel 42: Grinding Wheel 44: Electric motor 45: Grinding feed mechanism 5: Turntable 6: Chuck Table 7: First Cassette 8: The second cassette 9: Temporary Table 10: Washing water supply nozzle 11: Washing equipment 110: Cleaning space 112: Cleaning cover 114: Spinner Table 116: Cleaning nozzle 12: Workpiece loading / unloading means 13: First means of transport 14: Second means of transport 20: Drain pan 21:Supporting wall 50: Verification method 52: Camera 100: Control means 102: Rotation speed change section 104: Oscillation speed change section 106: Combination generation unit 108: Records Department

Claims

1. A cleaning device for cleaning contaminants from wafers, The system comprises a spinner table that holds and rotates a wafer, a cleaning nozzle that supplies cleaning water to the soiled surface of the wafer held on the spinner table and causes it to oscillate, and a control means. The cleaning apparatus comprises a control means, a rotation speed changing unit that changes the rotation speed of the spinner table in stages, an oscillation speed changing unit that changes the oscillation speed of the cleaning nozzle in stages, a combination generating unit that generates combinations of the rotation speed and the oscillation speed that change in stages, and a recording unit that records combinations in which the wafer is effectively cleaned.

2. The cleaning apparatus according to claim 1, comprising a means for confirming the cleaning effect of a wafer, wherein the recording unit stores data confirming the cleaning effect of the wafer by the confirmation means for each combination generated by the combination generation unit.

3. The cleaning apparatus according to claim 2, wherein the confirmation means is a camera, and the cleaning effect of the wafer is confirmed by image processing.

Images