Adhesive treatment method

Abstract

The bonding method of the present invention includes: fixing a semiconductor device coated with adhesive onto a rotating stage; controlling the temperature of the rotating stage to keep the adhesive in a molten state and below its boiling point; controlling the rotation of the rotating stage in a negative pressure chamber to expel air bubbles from the adhesive; and curing the adhesive in the semiconductor device. The present invention can effectively remove air bubbles from the adhesive, thereby improving bonding strength and subsequent curing and bonding effects; moreover, the method is simple, easy to implement, and easy to operate.

Description

Technical Field

[0001] This invention relates to the field of semiconductor bonding, and more particularly to an optimized bonding process method. Background Technology

[0002] Bonding is a crucial step in semiconductor processing, and its effectiveness often significantly impacts semiconductor performance. For example, semiconductor wafers typically undergo dicing and grinding processes, all of which require bonding the wafers to ceramic substrates. Similarly, bonding two substrates to be joined is another example. Traditionally, adhesives such as resin are used. However, a common problem is the presence of air bubbles in the resin after bonding, leading to weak and unstable adhesion, and making the adhesive prone to cracking and detachment, ultimately affecting the performance of the semiconductor product.

[0003] Therefore, there is an urgent need to provide an optimized bonding method to overcome the above defects. Summary of the Invention

[0004] The purpose of this invention is to provide an optimized bonding treatment method that can effectively remove air bubbles in the adhesive, thereby improving the bonding strength. Moreover, this method is simple, easy to implement and operate.

[0005] To achieve the above objectives, the bonding treatment method of the present invention includes:

[0006] The semiconductor component coated with adhesive is fixed on the rotary table;

[0007] The temperature of the rotary table is controlled to keep the adhesive in a molten state and below its boiling point;

[0008] In the negative pressure chamber, the rotary table is controlled to rotate so that excess adhesive overflows from the edge of the semiconductor component; and

[0009] The adhesive in the semiconductor device is cured.

[0010] Compared with existing technologies, the method of this invention strictly controls the temperature of the negative pressure chamber to keep the adhesive in a molten state but not at its boiling point. By controlling the rotation of the semiconductor on a rotating table, air bubbles in the adhesive are expelled, and excess adhesive overflows from the edge of the semiconductor. After cleaning, the semiconductor is cured. Thus, air bubbles in the adhesive are ejected and burst, effectively removing them, improving adhesion, and preventing cracking and detachment, thereby improving the reliability of the semiconductor. Moreover, this method is simple, easy to implement, and easy to operate.

[0011] Preferably, the temperature of the rotary table is controlled at 900-120°C.

[0012] Preferably, the rotational speed of the rotary table is 700-800 rpm.

[0013] Preferably, the rotation time of the rotary table is 20-30 minutes.

[0014] Preferably, after the rotary table stops rotating, nitrogen gas is introduced into the chamber to restore the chamber to normal pressure.

[0015] Preferably, the adhesive comprises PU resin, water-based additives, hot melt powder, curing agent, flame retardant and water.

[0016] Preferably, the negative pressure of the chamber is -1.00±0.02MPa. Detailed Implementation

[0017] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific implementation methods of this application are described in detail below with reference to some embodiments. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0018] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0019] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0020] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0021] The bonding treatment method of the present invention will be further described below with reference to embodiments, but this does not limit the present invention. The method of the present invention aims to provide an optimized bonding treatment method that can effectively remove air bubbles in the adhesive, thereby improving the bonding strength and subsequently improving the curing and bonding effect.

[0022] In one embodiment of the bonding treatment method of the present invention, the method includes the following steps:

[0023] The semiconductor component coated with adhesive is fixed on the rotary table;

[0024] The temperature of the rotary table is controlled to keep the adhesive in a molten state and below its boiling point;

[0025] In the negative pressure chamber, the rotary table is controlled to rotate so that excess adhesive overflows from the edge of the semiconductor component; and

[0026] The adhesive in the semiconductor device is cured.

[0027] The method of this invention involves strictly controlling the temperature of a negative pressure chamber to keep the adhesive in a molten state but below its boiling point. By controlling the rotation of a semiconductor on a rotating stage, air bubbles in the adhesive are expelled, and excess adhesive overflows from the edges of the semiconductor. After cleaning, the semiconductor is cured. This process effectively removes air bubbles from the adhesive, improving bonding strength and preventing cracking and detachment, thereby enhancing the reliability of the semiconductor. Furthermore, this method is simple, easy to implement, and easy to operate.

[0028] Specifically, a rotating stage can be provided in the sealing device to support the semiconductor component, such as a sealable chamber or working area. The sealable device is connected to an air extraction device, thereby extracting the gas from the sealable device to create a negative pressure environment within it. Preferably, the air pressure of this negative pressure environment is -1.00±0.02MPa.

[0029] The rotary table may also be equipped with fixtures for fixing semiconductor components, and the specific structure is not limited here. Those skilled in the art can configure it according to existing common methods.

[0030] First, the semiconductor component is coated with adhesive outside the rotary table. After the adhesive is applied, the semiconductor component is fixed on the rotary table before it is cured and then the subsequent steps are carried out.

[0031] This invention uses a water-based adhesive as the bonding agent. Preferably, the adhesive comprises PU resin, water-based additives, hot melt powder, curing agent, flame retardant, and water.

[0032] In a preferred embodiment, the temperature of the rotating stage is controlled to keep the adhesive in a molten state but not to the boiling point. Preferably, the temperature of the rotating stage is 900-120°C. Optionally, this can be achieved by controlling the temperature of the chamber, or the temperature of the rotating stage can be controlled independently. The advantage of such temperature control is that, under the negative pressure environment at this temperature, the bubbles in the adhesive are more active, which is more conducive to the escape of bubbles and the rupture of bubbles in the adhesive.

[0033] Next, the rotary table is controlled to rotate, thereby rotating the semiconductor component. Specifically, the rotation speed of the rotary table is preferably controlled at 700-800 rpm, and the rotation time is preferably 20-30 minutes. During the rotation, air bubbles in the adhesive are thrown out under the action of centrifugal force, and excess adhesive also overflows from the edges of the parts to be bonded, thereby improving the bonding effect. Moreover, the rotation is carried out under negative pressure, which promotes the collapse of air bubbles in the adhesive, helps to remove air bubbles, and thus improves the subsequent curing effect, ultimately enhancing the bonding effect. Preferably, after the rotary table stops rotating, nitrogen gas is introduced into the chamber, causing the internal vacuum level to change and gradually return to normal pressure, so that air bubbles in the adhesive will collapse regardless of their location. At the same time, nitrogen gas can isolate the adhesive from oxygen, thereby reducing oxidation reactions.

[0034] After the bubble removal step is completed, the semiconductor component is removed, the overflowing adhesive is cleaned, and finally the adhesive in the semiconductor component is cured before proceeding to the next processing step.

[0035] In summary, the method of this invention maintains the adhesive in a molten state but below its boiling point within a negative pressure chamber by strictly controlling the chamber temperature. By controlling the rotation of the semiconductor on a rotating stage, air bubbles in the adhesive are expelled, and excess adhesive overflows from the edges of the semiconductor. After cleaning, the semiconductor is cured. This process effectively removes air bubbles from the adhesive, improving bonding strength and preventing cracking and detachment, thereby enhancing the reliability of the semiconductor. Furthermore, this method is simple, easy to implement and operate, and suitable for widespread industrial application.

[0036] The above-disclosed embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. Therefore, any equivalent variations made in accordance with the claims of the present invention are still within the scope of the present invention.

Claims

1. A bonding treatment method characterized by, include: The semiconductor component coated with adhesive is fixed on the rotary table; The temperature of the rotary table is controlled to keep the adhesive in a molten state and below its boiling point; In the negative pressure chamber, the rotating table is controlled to rotate so that air bubbles in the adhesive are expelled; as well as The adhesive in the semiconductor device is cured.

2. The bonding treatment method as described in claim 1, characterized in that: The temperature of the rotary table is controlled at 900-120℃.

3. The bonding treatment method as described in claim 1, characterized in that: The rotational speed of the rotary table is 700-800 rpm.

4. The bonding treatment method as described in claim 1, characterized in that: The rotation time of the rotary table is 20-30 minutes.

5. The bonding treatment method as described in claim 1, characterized in that: After the rotating platform stops rotating, nitrogen gas is introduced into the chamber to restore the chamber to normal pressure.

6. The bonding treatment method as described in claim 1, characterized in that: The adhesive comprises PU resin, water-based additives, hot melt powder, curing agent, flame retardant and water.

7. The bonding treatment method as described in claim 1, characterized in that: The negative pressure of the chamber is -1.00±0.02MPa.