Semiconductor equipment

Abstract

The present invention provides a semiconductor device capable of suppressing the oscillation of drive signals. [Solution] The semiconductor device A1 comprises a plurality of first semiconductor elements 1, a first control terminal, a wiring section 521 to which the first control terminal is connected, a wiring section 531, an insulating substrate 41 having a first main surface and a first back surface, an insulating substrate 42 having a second main surface and a second back surface, and a plurality of connecting members 7. The plurality of connecting members 7 include a connecting member 731 that connects the wiring section 521 and the wiring section 531 electrically, and a connecting member 721 that connects the wiring section 531 and the third electrodes 13 of the plurality of first semiconductor elements 1 electrically. In the plurality of first semiconductor elements 1, the first electrodes are electrically connected to each other, and the second electrodes 12 are electrically connected to each other. The wiring section 521 is formed on the first main surface, the second back surface faces the first main surface, and the wiring section 531 is formed on the first main surface. Viewed in the z direction, a part of the insulating substrate 42 overlaps a part of the insulating substrate 41.

Description

Technical Field

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[0001] The present disclosure relates to a semiconductor device.

Background Art

[0002] Conventionally, semiconductor devices including power semiconductor elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are known. In such a semiconductor device, in order to ensure the allowable current of the semiconductor device, a configuration in which a plurality of power semiconductor elements are connected in parallel is known (for example, Patent Document 1). The power module described in Patent Document 1 includes a plurality of semiconductor elements, a plurality of connection wires, a wiring layer, and signal terminals. Each semiconductor element is, for example, a MOSFET, and is turned on and off in response to a drive signal input to the gate terminal. The plurality of connection wires connect the gate terminals of the plurality of semiconductor elements to the wiring layer. The wiring layer is connected to the signal terminal. As a result, the signal terminal is connected to the gate terminals of the plurality of semiconductor elements via the wiring layer and the plurality of connection wires.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In a power semiconductor element that performs a switching operation at high speed, unexpected oscillation may occur in a drive signal (for example, a gate voltage). When oscillation occurs in the drive signal, there is a risk that a circuit (semiconductor device) including the power semiconductor element may malfunction.

[0005] In view of the above circumstances, one of the objectives of this disclosure is to provide a semiconductor device capable of suppressing the oscillation of drive signals. [Means for solving the problem]

[0006] A semiconductor device provided by a first aspect of this disclosure comprises a plurality of first semiconductor elements, each having a first electrode, a second electrode, and a third electrode, wherein the connection between the first electrode and the second electrode is controlled to be on or off in response to a first drive signal input to the third electrode. The semiconductor device also comprises a first control terminal to which the first drive signal is input, a first wiring section to which the first control terminal is connected, a second wiring section spaced apart from the first wiring section, a first connecting member that connects the first wiring section and the second wiring section, and a second connecting member that connects the second wiring section and the third electrode of any of the plurality of first semiconductor elements. The first electrodes of each of the plurality of first semiconductor elements are electrically connected to each other, and the second electrodes of each of the plurality of first semiconductor elements are electrically connected to each other.

[0007] The semiconductor device provided by the second aspect of this disclosure comprises a plurality of semiconductor elements, each having a first electrode, a second electrode, and a third electrode, wherein the connection between the first electrode and the second electrode is controlled to be on or off in response to a drive signal input to the third electrode. The semiconductor device also comprises a plurality of control terminals, each receiving the drive signal; a plurality of wiring sections, which are conductive to the plurality of control terminals and to which the plurality of control terminals are joined; a plurality of connecting members, which connect the third electrode of each of the plurality of semiconductor elements to the plurality of wiring sections, respectively; and an insulating substrate having a main surface and a back surface spaced apart in the thickness direction, with a plurality of wiring sections formed on the main surface. Each of the plurality of control terminals extends in the direction in which the main surface faces in the thickness direction. [Effects of the Invention]

[0008] According to the above configuration, it becomes possible to suppress the oscillation of the drive signal in the semiconductor device. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a perspective view showing a semiconductor device according to the first embodiment. [Figure 2] Figure 2 is a perspective view of Figure 1 with the sealing member omitted. [Figure 3] Figure 3 is a magnified view of a portion of Figure 2. [Figure 4] Figure 4 is a magnified view of a portion of Figure 2. [Figure 5] Figure 5 is a plan view showing a semiconductor device according to the first embodiment, in which the sealing member is indicated by dashed lines. [Figure 6] Figure 6 is a plan view of Figure 5 with multiple terminals, multiple connecting members, and sealing members omitted. [Figure 7] Figure 7 is a plan view of Figure 6 with some wiring sections omitted. [Figure 8] Figure 8 is a plan view of Figure 7 with the insulating substrate omitted. [Figure 9] Figure 9 is a cross-sectional view along the line IX-IX in Figure 5. [Figure 10] Figure 10 is a cross-sectional view along line XX in Figure 5. [Figure 11] Figure 11 is a cross-sectional view along the line XI-XI in Figure 5. [Figure 12] Figure 12 is a cross-sectional view along the line XII-XII in Figure 5. [Figure 13] Figure 13 is a magnified view of a portion of Figure 12. [Figure 14] Figure 14 is a magnified view of a portion of Figure 12. [Figure 15] Figure 15 is a plan view showing a semiconductor device according to a second embodiment, in which the sealing member is indicated by dashed lines. [Figure 16] Figure 16 is a plan view showing a semiconductor device according to the third embodiment, in which the sealing member is omitted. [Figure 17] Figure 17 is a perspective view showing a semiconductor device according to the fourth embodiment. [Figure 18]FIG. 18 is a plan view showing a semiconductor device according to the fourth embodiment, with a part of the case omitted. [Figure 19] FIG. 19 is a cross-sectional view taken along line XIX-XIX of FIG. 18, with a part of the case shown by an imaginary line. [Figure 20] FIG. 20 is a plan view showing a semiconductor device according to the fifth embodiment, with a sealing member shown by an imaginary line. [Figure 21] FIG. 21 is a perspective view showing a semiconductor device according to the sixth embodiment. [Figure 22] FIG. 22 is a plan view showing a semiconductor device according to the sixth embodiment, with a sealing member shown by an imaginary line. [Figure 23] FIG. 23 is a cross-sectional view taken along line XXIII-XXIII of FIG. 22.

Embodiments for Carrying Out the Invention

[0010] Preferred embodiments of the semiconductor device of the present disclosure will be described below with reference to the drawings. In the following description, the same or similar elements are denoted by the same reference numerals, and redundant descriptions are omitted.

[0011] FIGS. 1 to 13 show a semiconductor device A1 according to the first embodiment. The semiconductor device A1 includes a plurality of first semiconductor elements 1, a plurality of second semiconductor elements 2, a support member 3, a plurality of insulating substrates 41 to 43, a plurality of wiring portions 511 to 514, 521 to 528, 531 to 534, a plurality of metal members (conductive metal members) 58, 59, a pair of control terminals 61, 62, a plurality of detection terminals 63 to 65, a plurality of side terminals 66, a plurality of connection members 7, and a sealing member 8. The plurality of connection members 7 are, for example, bonding wires, and as shown in FIGS. 3 and 4, include a plurality of connection members 711, 712, 721 to 724, 731 to 734.

[0012] Figure 1 is a perspective view showing semiconductor device A1. Figure 2 is a perspective view of Figure 1 with the sealing member 8 omitted. Figure 3 is an enlarged view of a key part of Figure 2. Figure 4 is an enlarged view of a key part of Figure 2. Figure 5 is a plan view showing semiconductor device A1, with the sealing member 8 indicated by dashed lines. Figure 6 is a plan view of Figure 5 with a pair of control terminals 61, 62, a plurality of detection terminals 63-65, a plurality of side terminals 66, and a plurality of connecting members 7 omitted. Figure 7 is a plan view of Figure 6 with two insulating substrates 42, 43 and a plurality of wiring sections 512, 513, 521-528, 531-534 omitted. Figure 8 is a plan view of Figure 7 with insulating substrate 41 omitted. Figure 9 is a cross-sectional view along the line IX-IX in Figure 5. Figure 10 is a cross-sectional view along the line XX in Figure 5. Figure 11 is a cross-sectional view along the line XI-XI in Figure 5. Figure 12 is a cross-sectional view along the line XII-XII in Figure 5. Figure 13 is a magnified portion of Figure 12. Figure 14 is a magnified portion of Figure 12.

[0013] For the sake of explanation, we will refer to three mutually orthogonal directions, namely the x, y, and z directions, as appropriate. The z direction is, for example, the thickness direction of semiconductor device A1. The x direction is the left-right direction in the plan view of semiconductor device A1 (see Figure 5). The y direction is the up-down direction in the plan view of semiconductor device A1 (see Figure 5). The x direction is an example of a "first direction," and the y direction is an example of a "second direction."

[0014] Each of the multiple first semiconductor elements 1 and the multiple second semiconductor elements 2 is, for example, a MOSFET. Instead of MOSFETs, other switching elements such as field-effect transistors including MISFETs (Metal-Insulator-Semiconductor FETs) or bipolar transistors including IGBTs may be used. Each of the multiple first semiconductor elements 1 and the multiple second semiconductor elements 2 is constructed using a semiconductor material mainly composed of SiC (silicon carbide). This semiconductor material is not limited to SiC, and may also be Si (silicon), GaAs (gallium arsenide), GaN (gallium nitride), or Ga2O3 (gallium oxide), etc.

[0015] Each of the multiple first semiconductor elements 1 has an element main surface 1a and an element back surface 1b, as shown in Figure 13. The element main surface 1a and the element back surface 1b are spaced apart from each other in the z direction. The element main surface 1a faces the z2 direction, and the element back surface 1b faces the z1 direction. The element main surface 1a is an example of a "first element main surface," and the element back surface 1b is an example of a "first element back surface."

[0016] Each of the multiple first semiconductor elements 1 has a first electrode 11, a second electrode 12, and a third electrode 13. As shown in Figure 13, in each first semiconductor element 1, the first electrode 11 is formed on the back surface 1b of the element, and the second electrode 12 and the third electrode 13 are formed on the main surface 1a of the element. In the example where each first semiconductor element 1 is a MOSFET, the first electrode 11 is the drain electrode, the second electrode 12 is the source electrode, and the third electrode 13 is the gate electrode. When a first drive signal (for example, a gate voltage) is input to the third electrode 13 (gate electrode) of each first semiconductor element 1, it switches between a conduction state and an interrupted state in response to this first drive signal. This operation of switching between a conduction state and an interrupted state is called switching operation. In the conduction state, current flows from the first electrode 11 (drain electrode) to the second electrode 12 (source electrode), and in the interrupted state, this current does not flow. In other words, each first semiconductor element 1 is controlled on / off between its first electrode 11 (drain electrode) and second electrode 12 (source electrode) by a first drive signal (e.g., gate voltage) input to its third electrode 13 (gate electrode). Multiple first semiconductor elements 1 are electrically connected to each other at their respective first electrodes 11 (e.g., drain electrodes) and to each other at their respective second electrodes 12 (e.g., source electrodes) in a configuration that will be described in detail later.

[0017] Multiple first semiconductor elements 1 are arranged along the x-direction, as shown in Figures 2 and 5. Each first semiconductor element 1 is bonded to a support member 3 (conductive plate 31) via a conductive bonding material 19, as shown in Figure 13. The conductive bonding material 19 is made of, for example, solder, metal paste, or sintered metal.

[0018] Each of the multiple second semiconductor elements 2 has an element main surface 2a and an element back surface 2b, as shown in Figure 14. The element main surface 2a and the element back surface 2b are spaced apart from each other in the z direction. The element main surface 2a faces the z2 direction, and the element back surface 2b faces the z1 direction. The element main surface 2a is an example of a "second element main surface," and the element back surface 2b is an example of a "second element back surface."

[0019] Each of the multiple second semiconductor elements 2 has a fourth electrode 21, a fifth electrode 22, and a sixth electrode 23. As shown in Figure 14, in each second semiconductor element 2, the fourth electrode 21 is formed on the back surface 2b of the element, and the fifth electrode 22 and sixth electrode 23 are formed on the main surface 2a of the element. In the example where each second semiconductor element 2 is a MOSFET, the fourth electrode 21 is the drain electrode, the fifth electrode 22 is the source electrode, and the sixth electrode 23 is the gate electrode. When a second drive signal (for example, a gate voltage) is input to the sixth electrode 23 (gate electrode), each second semiconductor element 2 performs a switching operation in response to this second drive signal. In the conduction state, current flows from the fourth electrode 21 (drain electrode) to the fifth electrode 22 (source electrode), and in the interruption state, this current does not flow. In other words, each second semiconductor element 2 has its fourth electrode 21 (drain electrode) and fifth electrode 22 (source electrode) switched on and off in response to a second drive signal (e.g., gate voltage) input to the sixth electrode 23 (gate electrode). Multiple second semiconductor elements 2 are electrically connected to each other at their respective fourth electrodes 21 (e.g., drain electrodes) and to each of their respective fifth electrodes 22 (e.g., source electrodes) in a configuration that will be described in detail later.

[0020] As shown in Figures 2 and 5, the multiple second semiconductor elements 2 are arranged along the x-direction. The multiple second semiconductor elements 2 are located in the y2 direction relative to the multiple first semiconductor elements 1. Each second semiconductor element 2 is bonded to the support member 3 (conductive plate 32, described later) via a conductive bonding material 29, as shown in Figure 14. The conductive bonding material 29 is made of, for example, solder, metal paste, or sintered metal.

[0021] The semiconductor device A1 is configured, for example, as a half-bridge type switching circuit. Multiple first semiconductor elements 1 constitute the upper arm circuit of the semiconductor device A1, and multiple second semiconductor elements 2 constitute the lower arm circuit of the semiconductor device A1. In the semiconductor device A1, the multiple first semiconductor elements 1 are electrically connected in parallel with each other, and the multiple second semiconductor elements 2 are electrically connected in parallel with each other. In addition, each first semiconductor element 1 and each second semiconductor element 2 are electrically connected in series with each other. In the illustrated example, the semiconductor device A1 comprises four first semiconductor elements 1 and four second semiconductor elements 2 (see Figures 2 and 5). The number of first semiconductor elements 1 and second semiconductor elements 2 is not limited to this configuration and is appropriately determined according to the performance required of the semiconductor device A1.

[0022] As shown in Figures 8 to 14, the support member 3 supports a plurality of first semiconductor elements 1 and a plurality of second semiconductor elements 2. As shown in Figures 8 to 14, the support member 3 includes a pair of conductive plates 31, 32 and a pair of insulating plates 33, 34.

[0023] Each conductive plate 31, 32 is made of a conductive material, which is, for example, copper or a copper alloy. Each conductive plate 31, 32 may be a laminate in which layers of copper and layers of molybdenum are alternately stacked in the z direction. In this case, both the z1 and z2 surface layers of each conductive plate 31, 32 are layers made of copper.

[0024] As shown in Figures 8, 12, and 13, the conductive plate 31 supports and mounts a plurality of first semiconductor elements 1. The conductive plate 31 is electrically connected to the first electrode 11 (drain electrode) of each first semiconductor element 1. Therefore, the first electrode 11 of each of the plurality of first semiconductor elements 1 are electrically connected to each other via the conductive plate 31. The conductive plate 31 is, for example, rectangular parallelepiped. The dimension of the conductive plate 31 along the z-direction is larger than the dimension of the insulating substrate 41 along the z-direction. The conductive plate 31 is an example of a "first mounting section".

[0025] As shown in Figures 9 and 11-13, the conductive plate 31 has a mounting surface 31a facing the z2 direction. Each first semiconductor element 1 is bonded to the mounting surface 31a, and the wiring portion 511 is also bonded to it. As shown in Figures 9 and 13, the conductive plate 31 is bonded to the insulating plate 33 via a bonding material 319. The bonding material 319 may be conductive or insulating.

[0026] As shown in Figures 8, 12, and 14, the conductive plate 32 supports and mounts a plurality of second semiconductor elements 2. The conductive plate 32 is electrically connected to the fourth electrode 21 (drain electrode) of each second semiconductor element 2. Therefore, the fourth electrode 21 of each of the plurality of second semiconductor elements 2 is electrically connected to each other via the conductive plate 32. The conductive plate 32 is, for example, rectangular parallelepiped. The dimension of the conductive plate 32 along the z-direction is larger than the dimension of the insulating substrate 41 along the z-direction. The conductive plate 32 is an example of a "second mounting section".

[0027] As shown in Figures 10, 12, and 14, the conductive plate 32 has a mounting surface 32a facing the z2 direction. Each second semiconductor element 2 is bonded to the mounting surface 32a, and the wiring portion 514 is also bonded to it. As shown in Figures 10 and 14, the conductive plate 32 is bonded to the insulating plate 34 via a bonding material 329. The bonding material 329 may be conductive or insulating.

[0028] Each of the pair of insulating plates 33 and 34 is made of an insulating material, which is, for example, Al2O3. Each insulating plate 33 and 34 is rectangular in shape when viewed in the z direction (hereinafter also referred to as "plan view"), as shown in Figure 8. As shown in Figures 8, 9 and 11 to 13, insulating plate 33 supports the conductive plate 31. As shown in Figures 8, 10 to 12 and 14, insulating plate 34 supports the conductive plate 32. A plating layer may be formed on the surface of each insulating plate 33 and 34 where each conductive plate 31 and 32 are joined. This plating layer is, for example, made of silver or a silver alloy.

[0029] The insulating substrate 41 is made of an insulating material, for example, glass epoxy resin. Instead of glass epoxy resin, it may be made of ceramics such as AlN (aluminum nitride), SiN (silicon nitride), or Al2O3 (aluminum oxide). The insulating substrate 41 is an example of the "first insulating substrate".

[0030] As shown in Figures 9 to 14, the insulating substrate 41 has a main surface 411 and a back surface 412. The main surface 411 and the back surface 412 are spaced apart in the z direction. The main surface 411 faces in the z2 direction, and the back surface 412 faces in the z1 direction. The main surface 411 is an example of a "first main surface," and the back surface 412 is an example of a "first back surface."

[0031] The insulating substrate 41 includes a plurality of through holes 413, one through hole 414, a plurality of openings 415, and a plurality of openings 416, as shown in Figures 7 and 11 to 14.

[0032] Each of the multiple through-holes 413 penetrates the insulating substrate 41 in the z-direction from the main surface 411 to the back surface 412, as shown in Figure 11. As shown in Figures 7 and 11, a metal member 59 is inserted into each through-hole 413. The inner surface of the through-hole 413 does not contact the metal member 59, as shown in Figures 7 and 11. In contrast to this configuration, the inner surface of each through-hole 413 may be in contact with the metal member 59. In this disclosure, "inserted" means that a certain member (for example, each metal member 59) is in a certain through-hole (for example, each through-hole 413), and is not limited to whether a certain member is in contact with the inner surface of a certain through-hole or not. Note that an insulating member different from the insulating substrate 41 may be formed in the gap between the metal member 59 and the through-hole 413.

[0033] The through-hole 414 penetrates the insulating substrate 41 in the z-direction from the main surface 411 to the back surface 412. As shown in Figure 7, a metal member 58 is inserted into the through-hole 414. In the illustrated example, the inner surface of the through-hole 414 is in contact with the metal member 58 (see Figure 7), but it is not required to be in contact.

[0034] Each of the multiple openings 415 penetrates the insulating substrate 41 in the z-direction from the main surface 411 to the back surface 412, as shown in Figures 7, 12, and 13. As shown in Figure 7, each opening 415 surrounds a corresponding first semiconductor element 1 in a plan view. Each opening 415 is an example of a "first opening".

[0035] Each of the multiple openings 416 penetrates the insulating substrate 41 in the z-direction from the main surface 411 to the back surface 412, as shown in Figures 7, 12, and 14. As shown in Figure 7, each opening 416 surrounds a corresponding second semiconductor element 2 in a plan view. Each opening 416 is an example of a "second opening".

[0036] Each of the multiple insulating substrates 42, 43 is made of an insulating material, for example, glass epoxy resin, similar to insulating substrate 41. Each insulating substrate 42, 43 may be made of a ceramic material other than glass epoxy resin, for example, AlN (aluminum nitride), SiN (silicon nitride), or Al2O3 (aluminum oxide). Each insulating substrate 42, 43 is, for example, a rectangular plate in plan view.

[0037] Multiple insulating substrates 42 are arranged along the x-direction. Each of the multiple insulating substrates 42 is offset from each first semiconductor element 1 in the x-direction. In the example shown in Figure 5 (see also Figures 3 and 6), each insulating substrate 42 is offset in the x-direction from a corresponding first semiconductor element 1 towards the control terminal 61 and detection terminal 63. Each insulating substrate 42 is an example of a "second insulating substrate". Each insulating substrate 42 has a main surface 421 and a back surface 422, as shown in Figures 9 and 11. The main surface 421 and the back surface 422 are spaced apart in the z-direction. The main surface 421 faces the z2 direction, and the back surface 422 faces the z1 direction. The back surface 422 of each insulating substrate 42 faces the main surface 411. The main surface 421 is an example of a "second main surface", and the back surface 422 is an example of a "second back surface".

[0038] Multiple insulating substrates 43 are arranged along the x-direction. Each of the multiple insulating substrates 43 is offset from each second semiconductor element 2 in the x-direction. In the example shown in Figure 5 (see also Figures 4 and 6), each insulating substrate 43 is offset in the x-direction from a corresponding second semiconductor element 2 towards the control terminal 62 and detection terminal 64. Each insulating substrate 43 is an example of a "third insulating substrate". Each insulating substrate 43 has a main surface 431 and a back surface 432, as shown in Figures 10 and 11. The main surface 431 and the back surface 432 are spaced apart in the z-direction. The main surface 431 faces the z2 direction, and the back surface 432 faces the z1 direction. The back surface 432 of each insulating substrate 43 faces the main surface 411. The main surface 431 is an example of a "third main surface", and the back surface 432 is an example of a "third back surface".

[0039] Multiple wiring sections 511-514, 521-528, 531-534, together with a part of the support member 3 (conductive plates 31, 32), multiple metal members 58, 59, and multiple connecting members 711, 712, 721-724, 731-734, form a conductive path in the semiconductor device A1. Multiple wiring sections 511-514, 521-528, 531-534 are spaced apart from each other. Multiple wiring sections 511-514, 521-528, 531-534 are made of, for example, copper or a copper alloy. The thickness (dimension in the z direction) and constituent material of each wiring section 511-514, 521-528, 531-534 are appropriately changed according to the specifications of the semiconductor device A1 (rated current and allowable current, rated voltage and withstand voltage, internal inductance of the entire device, and size of the device, etc.).

[0040] Multiple wiring sections 511 to 514 form the main current conduction path in semiconductor device A1. In semiconductor device A1, in a plan view, wiring section 511 and wiring section 512 overlap each other (see Figures 6 and 9), and wiring section 513 and wiring section 514 overlap each other (see Figures 6 and 10).

[0041] The wiring section 511 is formed on the back surface 412 of the insulating substrate 41. As shown in Figures 9 and 11 to 13, the wiring section 511 is bonded to the mounting surface 31a of the conductive plate 31. The wiring section 511 is electrically connected to the first electrode 11 (drain electrode) of each of the multiple first semiconductor elements 1 via the conductive plate 31.

[0042] The wiring section 511 includes a plurality of openings 511a and at least one through hole 511b, as shown in Figures 8, 12, and 13. As shown in Figures 12 and 13, each of the plurality of openings 511a penetrates in the z direction. As can be seen from Figures 12 and 13, each of the plurality of openings 511a overlaps with a plurality of openings 415 in the insulating substrate 41 in a plan view. As shown in Figure 8, each opening 511a surrounds a corresponding first semiconductor element 1 in a plan view. The through hole 511b penetrates the wiring section 511 in the z direction. As shown in Figure 8, a metal member 58 is fitted into the through hole 511b.

[0043] The wiring section 512 is formed on the main surface 411 of the insulating substrate 41. As can be seen from Figures 5 and 6, the wiring section 512 is electrically connected to the fifth electrode 22 (source electrode) of each second semiconductor element 2 via a plurality of connecting members 712. In a plan view, the wiring section 512 is formed to avoid the plurality of first semiconductor elements 1.

[0044] The wiring section 513 is formed on the main surface 411 of the insulating substrate 41. In a plan view, the wiring section 513 is located in the y1 direction relative to the wiring section 512. As can be seen from Figures 5 and 6, the wiring section 513 is electrically connected to the second electrode 12 (source electrode) of each first semiconductor element 1 via a plurality of connecting members 711. Furthermore, the wiring section 513 is electrically connected to the fourth electrode 21 (drain electrode) of each second semiconductor element 2 via the wiring section 514 and each metal member 59, as will be described in detail later. In a plan view, the wiring section 513 is formed so as to avoid each of the plurality of second semiconductor elements 2.

[0045] The wiring section 513 includes a plurality of through holes 513a, as shown in Figures 6 and 11. As shown in Figures 6 and 11, one of a plurality of metal members 59 is fitted into each through hole 513a. As shown in Figures 6 and 11, the inner surface of each through hole 513a is in contact with the metal member 59. In this disclosure, "fitted" means that a member (for example, each metal member 59) is in a through hole (for example, each through hole 513a), and that a member is in contact with the inner surface of a through hole. In other words, the "fitted" state corresponds to the state of "inserted" where it is in contact with the inner surface of the through hole. In the illustrated example, each through hole 513a is circular in plan view (see Figure 6), but this can be appropriately changed according to the shape of each metal member 59.

[0046] The wiring section 514 is formed on the back surface 412 of the insulating substrate 41. As shown in Figures 8, 10 to 12, and 14, the wiring section 514 is bonded to the mounting surface 32a of the conductive plate 32. The wiring section 514 is electrically connected to the fourth electrode 21 (drain electrode) of each of the multiple second semiconductor elements 2 via the conductive plate 32. In addition, the wiring section 514 is electrically connected to the second electrode 12 (source electrode) of each first semiconductor element 1 via the wiring section 513 and the metal member 59, as will be described in detail later.

[0047] As shown in Figures 8, 11, 12, and 14, the wiring section 514 includes a plurality of openings 514a and a plurality of through holes 514b. As shown in Figure 12, each of the plurality of openings 514a penetrates in the z direction. As can be seen from Figures 12 and 14, each of the plurality of openings 514a overlaps with a plurality of openings 416 in the insulating substrate 41 in a plan view. As shown in Figure 8, each of the openings 514a surrounds a corresponding second semiconductor element 2 in a plan view. As shown in Figure 11, each of the plurality of through holes 514b penetrates the wiring section 514 in the z direction. In a plan view, each of the plurality of through holes 514b overlaps with a plurality of through holes 513a in the wiring section 513. A metal member 59 is fitted into each of the through holes 514b.

[0048] In semiconductor device A1, the wiring section 511 includes a first power terminal section 501 located at the end on the x2 direction side. The first power terminal section 501 is conductive to the first electrode 11 (drain electrode) of each of the multiple first semiconductor elements 1. The wiring section 512 includes a second power terminal section 502 located at the end on the x2 direction side. The second power terminal section 502 is conductive to the fifth electrode 22 (source electrode) of each of the multiple second semiconductor elements 2. The wiring section 513 includes a third power terminal section 503 located at the end on the x2 direction side. The third power terminal section 503 is conductive to the second electrode 12 (source electrode) of each of the multiple first semiconductor elements 1 and the fourth electrode 21 (drain electrode) of each of the multiple second semiconductor elements 2. The wiring section 514 includes a fourth power terminal section 504 located at the end on the x2 direction side. The fourth power terminal 504 is electrically connected to the second electrode 12 (source electrode) of each of the multiple first semiconductor elements 1 and the fourth electrode 21 (drain electrode) of each of the multiple second semiconductor elements 2.

[0049] The first power terminal section 501, the second power terminal section 502, the third power terminal section 503, and the fourth power terminal section 504 are spaced apart from each other and each is exposed from the sealing member 8. The surfaces of the first power terminal section 501, the second power terminal section 502, the third power terminal section 503, and the fourth power terminal section 504 are each plated.

[0050] The first power terminal section 501 and the second power terminal section 502 overlap each other in a plan view. The third power terminal section 503 and the fourth power terminal section 504 also overlap each other in a plan view. In the illustrated example, the semiconductor device A1 includes the third power terminal section 503 and the fourth power terminal section 504, but it may also include only one of the third power terminal section 503 or the fourth power terminal section 504, contrary to this configuration.

[0051] The first power terminal 501 and the second power terminal 502 are connected to, for example, an external DC power supply, and a power supply voltage (DC voltage) is applied to them. In semiconductor device A1, the first power terminal 501 is a P terminal connected to the positive terminal of the DC power supply, and the second power terminal 502 is an N terminal connected to the negative terminal of the DC power supply. The DC voltage applied to the first power terminal 501 and the second power terminal 502 is converted to an AC voltage by the switching operations of the multiple first semiconductor elements 1 and the multiple second semiconductor elements 2. The converted voltage (AC voltage) is output from the third power terminal 503 and the fourth power terminal 504, respectively.

[0052] Multiple wiring sections 521-525 and 531-534 form a conductive path for control signals in semiconductor device A1.

[0053] The wiring section 521 is formed on the main surface 411 of the insulating substrate 41. As shown in Figure 5, the control terminal 61 is connected to the wiring section 521. The wiring section 521 is an example of a "first wiring section". As shown in Figures 5 and 6, the wiring section 521 includes a pad section 521a, a strip section 521b, and a connecting section 521c. The pad section 521a is the part of the wiring section 521 to which the control terminal 61 is joined. The strip section 521b extends along the x-direction in a plan view. The strip section 521b is located on one side of the pad section 521a in the x-direction (the x2 direction side in the example shown in Figures 5 and 6). The strip section 521b is an example of a "first strip section". The connecting section 521c connects the pad section 521a and the strip section 521b.

[0054] The wiring section 522 is formed on the main surface 411 of the insulating substrate 41. As shown in Figure 5, the control terminal 62 is connected to the wiring section 522. The wiring section 522 is an example of the "fifth wiring section". As shown in Figures 5 and 6, the wiring section 522 includes a pad section 522a, a strip section 522b, and a connecting section 523c. The pad section 522a is the part of the wiring section 522 to which the control terminal 62 is joined. The strip section 522b extends along the x-direction in a plan view. The strip section 522b is located on one side of the pad section 522a in the x-direction (the x2 direction side in the example shown in Figures 5 and 6). The strip section 522b is an example of the "third strip section". The connecting section 522c connects the pad section 522a and the strip section 522b.

[0055] The wiring section 523 is formed on the main surface 411 of the insulating substrate 41. As shown in Figure 5, the detection terminal 63 is connected to the wiring section 523. The wiring section 523 is an example of a "third wiring section". As shown in Figures 5 and 6, the wiring section 523 includes a pad section 523a, a strip section 523b, and a connecting section 523c. The pad section 523a is the part of the wiring section 523 to which the detection terminal 63 is joined. The strip section 523b extends along the x-direction in a plan view. The strip section 523b is located on one side of the pad section 523a in the x-direction (the x2 direction side in the example shown in Figures 5 and 6). The strip section 523b is an example of a "second strip section". The connecting section 523c connects the pad section 523a and the strip section 523b.

[0056] The wiring section 524 is formed on the main surface 411 of the insulating substrate 41. As shown in Figure 5, the detection terminal 64 is connected to the wiring section 524. The wiring section 524 is an example of the "seventh wiring section". As shown in Figures 5 and 6, the wiring section 524 includes a pad section 524a, a strip section 524b, and a connecting section 524c. The pad section 524a is the part of the wiring section 524 to which the detection terminal 64 is joined. The strip section 524b extends along the x-direction in a plan view. The strip section 524b is located on one side of the pad section 524a in the x-direction (the x2 direction side in the example shown in Figures 5 and 6). The strip section 524b is an example of the "fourth strip section". The connecting section 524c connects the pad section 524a and the strip section 524b.

[0057] As shown in Figures 5 and 6, the strip portion 521b of the wiring portion 521 and the strip portion 523b of the wiring portion 523 are located in the y-direction opposite to the side where the multiple second semiconductor elements 2 are arranged compared to the multiple first semiconductor elements 1 (i.e., in the y2 direction). The strip portions 521b and 523b are arranged with their respective longitudinal directions parallel to each other. In the illustrated example, the strip portion 523b is located in the y-direction opposite to the side where the multiple first semiconductor elements 1 are arranged compared to the strip portion 521b (i.e., in the y2 direction) (see Figures 5 and 6), but the positional relationship between the strip portions 521b and 523b may be reversed. In the semiconductor device A1, the multiple insulating substrates 42 are arranged on the strip portions 521b and 523b, respectively, and straddle them.

[0058] As shown in Figures 5 and 6, the strip portion 522b of the wiring portion 522 and the strip portion 524b of the wiring portion 524 are located in the y-direction opposite to the side where the multiple first semiconductor elements 1 are arranged compared to the multiple second semiconductor elements 2 (i.e., in the y1 direction). The strip portions 522b and 524b are arranged so that their respective longitudinal directions are parallel to each other. In the illustrated example, the strip portion 524b is located in the y-direction opposite to the side where the multiple second semiconductor elements 2 are arranged compared to the strip portion 522b (i.e., in the y1 direction) (see Figures 5 and 6), but the positional relationship between the strip portions 522b and 524b may be reversed. In the semiconductor device A1, the multiple insulating substrates 43 are arranged on the strip portions 522b and 524b, respectively, and straddle them.

[0059] The wiring section 525 is formed on the main surface 411 of the insulating substrate 41. As shown in Figure 5, a detection terminal 65 is connected to the wiring section 525. As shown in Figure 6, a through hole 525a is formed in the wiring section 525. The through hole 525a penetrates the wiring section 525 in the z direction. A metal member 58 is fitted into the through hole 525a.

[0060] Multiple wiring sections 526 and 527 are each formed on the main surface 411 of the insulating substrate 41. Each of the multiple wiring sections 526 is formed in a region of the main surface 411 sandwiched between two first semiconductor elements 1 that are adjacent in the x-direction when viewed from above. Each of the multiple wiring sections 527 is formed in a region of the main surface 411 sandwiched between two second semiconductor elements 2 that are adjacent in the x-direction when viewed from above. In the illustrated example, each wiring section 526 and 527 is rectangular in plan view (see Figures 5 and 6), but the disclosure is not limited thereto. Each wiring section 526 may be formed integrally with a wiring section 512, and each wiring section 527 may be formed integrally with a wiring section 513. In semiconductor device A1, each of the multiple wiring sections 526 and 527 is not electrically connected to any of the multiple first semiconductor elements 1 or the multiple second semiconductor elements 2.

[0061] Each of the multiple wiring sections 528 is formed on the main surface 411 of the insulating substrate 41. Each of the multiple wiring sections 528 is formed near the edge in the y direction of the main surface 411. Each of the multiple wiring sections 528 is positioned in either the y2 direction relative to wiring section 523 or the y1 direction relative to wiring section 524 in the y direction. Each wiring section 528 is connected to each lateral terminal 66 as shown in Figure 5. In the semiconductor device A1, each of the multiple wiring sections 528 is not electrically connected to any of the multiple first semiconductor elements 1 or the multiple second semiconductor elements 2.

[0062] Multiple wiring sections 531 are formed on the main surfaces 421 of multiple insulating substrates 42, as shown in Figures 9 and 11. Each wiring section 531 is electrically connected to the third electrode 13 (gate electrode) of a corresponding first semiconductor element 1 via a corresponding connecting member 721, as can be understood from Figures 5 and 6. Each wiring section 531 is also electrically connected to a wiring section 521 via a corresponding connecting member 731. Each wiring section 531 is an example of a "second wiring section".

[0063] As shown in Figures 10 and 11, multiple wiring sections 532 are formed on the main surfaces 431 of multiple insulating substrates 43. Each wiring section 532 is electrically connected to the sixth electrode 23 (gate electrode) of a corresponding second semiconductor element 2 via a corresponding connecting member 722, as can be seen from Figures 5 and 6. Each wiring section 532 is also electrically connected to a wiring section 522 via a corresponding connecting member 732. Each wiring section 532 is an example of a "sixth wiring section".

[0064] As shown in Figure 11, the multiple wiring sections 533 are formed on the main surfaces 421 of the multiple insulating substrates 42. As can be seen from Figures 5 and 6, each wiring section 533 is electrically connected to the second electrode 12 (source electrode) of the corresponding first semiconductor element 1 via a corresponding connecting member 723. Each wiring section 533 is electrically connected to the wiring section 523 via a corresponding connecting member 733. Each wiring section 533 is an example of a "fourth wiring section".

[0065] As shown in Figure 11, multiple wiring sections 534 are formed on the main surfaces 431 of multiple insulating substrates 43. As can be seen from Figures 5 and 6, each wiring section 534 is electrically connected to the fifth electrode 22 (source electrode) of the corresponding second semiconductor element 2 via a corresponding connecting member 724. Each wiring section 534 is electrically connected to a wiring section 524 via a corresponding connecting member 734. Each wiring section 534 is an example of an "eighth wiring section".

[0066] Each of the multiple metal members 59 penetrates the insulating substrate 41 in the z direction, as shown in Figure 11, and connects the wiring portion 513 and the wiring portion 514 electrically. Each metal member 59 is, for example, columnar. In the illustrated example, the plan view shape of each metal member 59 is circular (see Figures 5-8), but the plan view shape of each metal member 59 may be elliptical or polygonal, not circular. The constituent material of each metal member 59 is, for example, copper or a copper alloy.

[0067] As shown in Figures 6 to 8 and Figure 11, the multiple metal members 59 are fitted into each through-hole 513a of the wiring section 513 and each through-hole 514b of the wiring section 514, and are also inserted into each through-hole 413 of the insulating substrate 41. Each metal member 59 is in contact with the inner surface of either the through-hole 513a or the through-hole 514b. Each metal member 59 is supported by being fitted into the through-hole 513a or the through-hole 514b. If a gap occurs between the metal member 59 and the inner surface of the through-hole 513a, or between the metal member 59 and the inner surface of the through-hole 514b, solder may be poured into this gap. This fills the gap with solder, fixing each metal member 59 to the wiring section 513 and the wiring section 514. When solder is poured, the gap between the metal member 59 and the inner surface of the through-hole 413 of the insulating substrate 41 may also be filled with solder.

[0068] The metal member 58 penetrates the insulating substrate 41 in the z direction, making electrical contact between the wiring portion 511 and the wiring portion 525. The metal member 58 is, for example, columnar. In the illustrated example, the plan view shape of the metal member 58 is circular (see Figures 6 to 8), but the plan view shape of the metal member 58 may be elliptical or polygonal, not circular. The constituent material of the metal member 58 is, for example, copper or a copper alloy.

[0069] As shown in Figures 6 to 8, the metal member 58 is fitted into the through hole 525a of the wiring section 525 or the through hole 511b of the wiring section 511, and is also inserted into the through hole 414 of the insulating substrate 41. The metal member 58 is in contact with the inner surface of the through hole 525a, the inner surface of the through hole 511b, or the inner surface of the through hole 414, respectively. The metal member 58 is supported by being fitted into the through holes 525a, 511b, and 414. If a gap occurs between the metal member 58 and the inner surfaces of the through holes 525a, 511b, and 414, solder can be poured into this gap. This fills the gap with solder, fixing the metal member 58 to the respective wiring sections 511 and 525 and the insulating substrate 41.

[0070] In semiconductor device A1, as shown in Figures 12 and 13, each first semiconductor element 1 is housed in a recess formed by the openings 415 of the insulating substrate 41 and the openings 511a of the wiring portion 511, and the conductive plate 31. In the illustrated example, the main surface 1a of each first semiconductor element 1 overlaps either the insulating substrate 41 or the wiring portion 511 when viewed in a direction perpendicular to the z direction (for example, the y direction), but it may also overlap the wiring portion 521. In either case, each first semiconductor element 1 does not protrude above the wiring portion 521 in the z direction (z2 direction). Similarly, as shown in Figures 12 and 14, each second semiconductor element 2 is housed in a recess formed by the openings 416 of the insulating substrate 41 and the openings 514a of the wiring portion 514, and the conductive plate 32. In the illustrated example, the main surface 2a of each second semiconductor element 2, when viewed in a direction perpendicular to the z direction (for example, the y direction), overlaps either the insulating substrate 41 or the wiring portion 514, but may also overlap the wiring portion 522. In either case, each second semiconductor element 2 does not protrude above the wiring portion 522 in the z direction (z2 direction).

[0071] Multiple control terminals 61, 62, multiple detection terminals 63-65, and multiple lateral terminals 66 are each made of a conductive material. This conductive material is, for example, copper or a copper alloy.

[0072] The control terminal 61 is electrically connected to the third electrode 13 (gate electrode) of each first semiconductor element 1. The control terminal 61 receives a first drive signal that controls the switching operation of each first semiconductor element 1. The control terminal 61 includes a portion covered by the sealing member 8 and a portion exposed from the sealing member 8. Of the control terminal 61, the portion covered by the sealing member 8 is joined to the pad portion 521a of the wiring portion 521. Of the control terminal 61, the portion exposed from the sealing member 8 is connected to an external control device (for example, a gate driver), and the first drive signal (gate voltage) is input from the control device. The control terminal 61 is an example of a "first control terminal".

[0073] The control terminal 62 is electrically connected to the sixth electrode 23 (gate electrode) of each second semiconductor element 2. The control terminal 62 receives a second drive signal that controls the switching operation of each second semiconductor element 2. The control terminal 62 includes a portion covered by the sealing member 8 and a portion exposed from the sealing member 8. Of the control terminal 62, the portion covered by the sealing member 8 is joined to the pad portion 522a of the wiring portion 522. The portion of the control terminal 62 exposed from the sealing member 8 is connected to the external control device, and the second drive signal (gate voltage) is input from the control device. The control terminal 62 is an example of a "second control terminal".

[0074] The detection terminal 63 is conductive to the second electrode 12 (source electrode) of each first semiconductor element 1. The detection terminal 63 outputs a first detection signal indicating the conductivity state of each first semiconductor element 1. In semiconductor device A1, the voltage applied to the second electrode 12 of each first semiconductor element 1 (voltage corresponding to the source current) is output from the detection terminal 63 as the first detection signal. The detection terminal 63 includes a portion covered by the sealing member 8 and a portion exposed from the sealing member 8. Of the detection terminal 63, the portion covered by the sealing member 8 is joined to the pad portion 523a of the wiring portion 523. Of the detection terminal 63, the portion exposed from the sealing member 8 is connected to the external control device, and outputs the first detection signal to the control device. The detection terminal 63 is an example of a "first detection terminal".

[0075] The detection terminal 64 is electrically connected to the fifth electrode 22 (source electrode) of each second semiconductor element 2. The detection terminal 64 outputs a second detection signal indicating the conductivity state of each second semiconductor element 2. In semiconductor device A1, the voltage applied to the fifth electrode 22 of each second semiconductor element 2 (voltage corresponding to the source current) is output from the detection terminal 64 as the second detection signal. The detection terminal 64 includes a portion covered by the sealing member 8 and a portion exposed from the sealing member 8. Of the detection terminal 64, the portion covered by the sealing member 8 is joined to the pad portion 524a of the wiring portion 524. Of the detection terminal 64, the portion exposed from the sealing member 8 is connected to the external control device, and outputs the second detection signal to the control device. The detection terminal 64 is an example of a "second detection terminal".

[0076] The detection terminal 65 is electrically connected to the first electrode 11 (drain electrode) of each first semiconductor element 1. The detection terminal 65 outputs a voltage (voltage corresponding to the drain current) applied to the first electrode 11 of each first semiconductor element 1. The detection terminal 65 includes a portion covered by the sealing member 8 and a portion exposed from the sealing member 8. Of the detection terminal 65, the portion covered by the sealing member 8 is joined to the wiring portion 525. The portion of the detection terminal 65 exposed from the sealing member 8 is connected to the external control device, which outputs a voltage (voltage corresponding to the drain current) applied to the first electrode 11 of each first semiconductor element 1 to the control device.

[0077] Each of the multiple lateral terminals 66 is not electrically connected to any of the multiple first semiconductor elements 1 or the multiple second semiconductor elements 2. Each of the multiple lateral terminals 66 includes a portion covered by the sealing member 8 and a portion exposed from the sealing member 8. In each lateral terminal 66, the portion covered by the sealing member 8 is joined to one of the multiple wiring portions 528. In each lateral terminal 66, the portion exposed from the sealing member 8 protrudes from the sealing member 8 in the y direction. In the illustrated example, the semiconductor device A1 has multiple lateral terminals 66, but it does not have to have multiple lateral terminals 66. In this case, the semiconductor device A1 does not have to have multiple wiring portions 528.

[0078] Each of the multiple connecting members 7 provides electrical conductivity to two portions that are spaced apart from each other. As described above, the multiple connecting members 7 include multiple connecting members 711, 712, 721-724, and 731-734. Each of the multiple connecting members 7 is, for example, a bonding wire. Some of the multiple connecting members 7 (for example, multiple connecting members 711, 712) may be metal plates instead of bonding wires. Each component material of the multiple connecting members 7 may be gold, aluminum, or copper.

[0079] As shown in Figures 3 and 5, the multiple connecting members 711 are joined to the second electrode 12 (source electrode) of each of the multiple first semiconductor elements 1 and to the wiring portion 513, thereby creating electrical conductivity between them. Unlike the illustrated example, the connecting members 711 may be joined to the upper surface of the multiple metal members 59 instead of the wiring portion 513. As shown in Figures 4 and 5, the connecting members 712 are joined to the fifth electrode 22 (source electrode) of each of the multiple second semiconductor elements 2 and to the wiring portion 512, thereby creating electrical conductivity between them.

[0080] As shown in Figures 3 and 5, the multiple connecting members 721 are joined to the third electrode 13 (gate electrode) of each of the multiple first semiconductor elements 1 and to the wiring portion 531, thereby creating electrical conductivity between them. In the illustrated example, each connecting member 721 extends in the x-direction from the joint with each third electrode 13 toward the joint with each wiring portion 531 toward the control terminal 61 (see Figure 5). Each connecting member 721 is an example of a "second connecting member".

[0081] As shown in Figures 4 and 5, the multiple connecting members 722 are joined to the sixth electrode 23 (gate electrode) of each of the multiple second semiconductor elements 2 and to the wiring portion 532, thereby creating electrical conductivity between them. In the illustrated example, each connecting member 722 extends in the x-direction from the joint with each sixth electrode 23 toward the joint with each wiring portion 532 toward the control terminal 62 (see Figure 5). Each connecting member 722 is an example of a "sixth connecting member".

[0082] As shown in Figures 3 and 5, the multiple connecting members 723 are joined to the second electrodes 12 (source electrodes) of each of the multiple first semiconductor elements 1 and to the wiring section 533, thereby creating electrical conductivity between them. In the illustrated example, each connecting member 723 extends in the x-direction from the joint with each second electrode 12 toward the joint with each wiring section 533 toward the detection terminal 63 (see Figure 5). Each connecting member 723 is an example of a "fourth connecting member".

[0083] As shown in Figures 4 and 5, the multiple connecting members 724 are joined to the fifth electrode 22 (source electrode) of each of the multiple second semiconductor elements 2 and to the wiring portion 534, thereby creating electrical conductivity between them. In the illustrated example, each connecting member 724 extends in the x-direction from the joint with each fifth electrode 22 toward the joint with each wiring portion 534 toward the detection terminal 64 (see Figure 5). Each connecting member 724 is an example of an "eighth connecting member".

[0084] Each of the multiple connecting members 731 is joined to the strip portion 521b of each wiring section 531 and wiring section 521, as shown in Figures 3 and 5, thereby providing electrical connection between each wiring section 531 and wiring section 521. In the illustrated example, each connecting member 731 extends in the x-direction from the joint portion with each wiring section 531 to the joint portion with the wiring section 521, moving away from the control terminal 61 (see Figure 5). In a plan view, each connecting member 731 extends along the x-direction. Each connecting member 731 is an example of a "first connecting member".

[0085] Each of the multiple connecting members 732 is joined to the strip portion 522b of each wiring section 532 and wiring section 522, as shown in Figures 4 and 5, thereby providing electrical connection between each wiring section 532 and wiring section 522. In the illustrated example, each connecting member 732 extends in the x-direction from the joint portion with each wiring section 532 toward the joint portion with the wiring section 522, away from the control terminal 62 (see Figure 5). In a plan view, each connecting member 732 extends along the x-direction. Each connecting member 732 is an example of a "fifth connecting member".

[0086] Each of the multiple connecting members 733 is joined to the strip portion 523b of each wiring section 533 and wiring section 523, as shown in Figures 3 and 5, thereby providing electrical connection between each wiring section 533 and wiring section 523. In the illustrated example, each connecting member 733 extends in the x-direction from the joint portion with each wiring section 533 to the joint portion with the wiring section 523, moving away from the detection terminal 63 (see Figure 5). In a plan view, each connecting member 733 extends along the x-direction. Each connecting member 733 is an example of a "third connecting member".

[0087] Each of the multiple connecting members 734 is joined to the strip portion 524b of each wiring section 534 and wiring section 524, as shown in Figures 4 and 5, thereby providing electrical conductivity between each wiring section 534 and wiring section 524. In the illustrated example, each connecting member 734 extends in the x-direction from the joint portion with each wiring section 534 to the joint portion with the wiring section 524, moving away from the detection terminal 64 (see Figure 5). In a plan view, each connecting member 734 extends along the x-direction. Each connecting member 734 is an example of a "seventh connecting member".

[0088] The sealing member 8 covers a plurality of first semiconductor elements 1, a plurality of second semiconductor elements 2, a part of the support member 3, a plurality of insulating substrates 41-43, a part of each of the plurality of wiring sections 511-514, a plurality of wiring sections 521-528, 531-534, a part of each of the pair of control terminals 61 and 62, a part of each of the plurality of detection terminals 63-65, a part of each of the plurality of lateral terminals 66, and a plurality of connecting members 7. The sealing member 8 is made of an insulating resin material such as epoxy resin. As shown in Figure 5, the sealing member 8 is rectangular in plan view.

[0089] As shown in Figures 1, 5, and 9-12, the sealing member 8 has a resin main surface 81, a resin back surface 82, and a plurality of resin side surfaces 831-834. As shown in Figures 9-12, the resin main surface 81 and the resin back surface 82 are spaced apart in the z direction. The resin main surface 81 faces the z2 direction, and the resin back surface 82 faces the z1 direction. As shown in Figures 5, 9, and 10, the resin side surfaces 831 and 832 are spaced apart in the x direction. The resin side surface 831 faces the x1 direction, and the resin side surface 832 faces the x2 direction. A pair of control terminals 61, 62 and a plurality of detection terminals 63-65 each protrude from the resin side surface 831. As shown in Figures 5, 11, and 12, the resin side surfaces 833 and 834 are spaced apart in the y direction. The resin side surface 833 faces the y1 direction, and the resin side surface 834 faces the y2 direction. Each of the multiple lateral terminals 66 protrudes from either the resin side surface 833 or the resin side surface 834.

[0090] The sealing member 8 has notches formed on its resin side surface 832 from the resin main surface 81 and the resin back surface 82, respectively. As shown in Figures 1, 5, 9, and 10, these notches expose the first power terminal portion 501, the second power terminal portion 502, the third power terminal portion 503, and the fourth power terminal portion 504 from the sealing member 8.

[0091] The effects and benefits of semiconductor device A1 are as follows:

[0092] In semiconductor device A1, a wiring section 531 is interposed in the conduction path between the wiring section 521 to which the control terminal 61 is connected and the third electrode 13 of each first semiconductor element 1. With this configuration, the distance of the conduction path from the third electrode 13 to the control terminal 61 can be extended compared to when the connecting member 721 is directly connected to the wiring section 521. Therefore, the transmission path of the first drive signal from the control terminal 61 to each first semiconductor element 1 can be made longer, and thus the inductance component in the transmission path can be increased. As a result, semiconductor device A1 can suppress oscillation of the first drive signal.

[0093] In semiconductor device A1, multiple first semiconductor elements 1 are arranged along the x-direction. Furthermore, a control terminal 61 is positioned on one side of the multiple first semiconductor elements 1 in the x-direction (the x1 direction in the example of Figure 5). In this configuration, if the connecting member 721 is directly connected to the wiring section 521 instead of the wiring section 531 for the first semiconductor element 1 located on the furthest side in the x-direction, the conduction path from the third electrode 13 of that first semiconductor element 1 to the control terminal 61 tends to become shorter. In other words, the arrangement of the multiple first semiconductor elements 1 and the arrangement of the control terminal 61 makes oscillation of the first drive signal more likely. Therefore, in the first semiconductor element 1 where the conduction path distance is shortened, interposing the wiring section 531 in the conduction path between the third electrode 13 and the control terminal 61 to extend the conduction path distance from the third electrode 13 to the control terminal 61 is effective in suppressing oscillation of the first drive signal input to this first semiconductor element 1.

[0094] In semiconductor device A1, each first semiconductor element 1 is provided with one wiring section 531, and each first semiconductor element 1 is electrically connected to the wiring section 521 via the wiring section 531. With this configuration, two wiring sections 531 are interposed in the conductive path between the third electrodes 13 of any two first semiconductor elements 1. Therefore, the distance of the conductive path between any two third electrodes 13 can be extended compared to when the connecting member 721 is directly connected to the wiring section 521. This makes it possible to suppress parasitic resonance that occurs when multiple first semiconductor elements 1 are connected in parallel, due to the formation of loop paths passing through the first electrode 11 and the third electrode 13 of each first semiconductor element 1. In other words, semiconductor device A1 can suppress parasitic resonance that occurs when multiple first semiconductor elements 1 are connected in parallel. Parasitic resonance that occurs when multiple first semiconductor elements 1 are connected in parallel can also be suppressed by equalizing the conductive path from the first power terminal section 501 to the first electrode 11 of each first semiconductor element 1. However, if there are limitations on the positional relationship between the multiple first semiconductor elements 1 and the first power terminal portion 501, or if the parasitic resonance frequency is high (for example, several hundred MHz), extending the distance of the conduction path between each third electrode 13, as described in this disclosure, is preferable for suppressing parasitic resonance.

[0095] In semiconductor device A1, each insulating substrate 42 is positioned on the side of each first semiconductor element 1 in the x-direction where the control terminal 61 is located. Furthermore, the portion of each connecting member 731 connected to the wiring portion 521 (strip portion 521b) is positioned on the opposite side of each first semiconductor element 1 in the x-direction from where the control terminal 61 is located, compared to the portion connected to the wiring portion 531. This allows semiconductor device A1 to extend the conductive path from the third electrode 13 of each first semiconductor element 1 to the wiring portion 521 (strip portion 521b). In other words, the distance of the conductive path between each third electrode 13 is extended in semiconductor device A1.

[0096] The semiconductor device A1 includes connecting members 721 and 731. Connecting member 721 connects the third electrode 13 of the first semiconductor element 1 to the wiring portion 531, and connecting member 731 connects the wiring portion 521 to the wiring portion 531. Each connecting member 721 and 731 is, for example, a bonding wire. Since each connecting member 721 and 731 is a bonding wire, their lengths can be easily adjusted. Therefore, by adjusting the length of each connecting member 721 and 731, the parasitic inductance component of each connecting member 721 and 731 can be adjusted, thereby adjusting the parasitic inductance component from the control terminal 61 to the third electrode 13 of the first semiconductor element 1. Thus, in semiconductor device A1, it is easy to fine-tune the parasitic inductance component from the control terminal 61 to the third electrode 13 of each first semiconductor element 1 according to the variations in the characteristics of each first semiconductor element 1.

[0097] In semiconductor device A1, each first semiconductor element 1 is provided with one wiring section 533, and all first semiconductor elements 1 are electrically connected to the wiring section 523 via the wiring section 533. With this configuration, two wiring sections 533 are interposed in the conductive path between the second electrodes 12 of any two first semiconductor elements 1, so the distance of the conductive path between each second electrode 12 can be extended compared to directly connecting the connecting member 723 to the wiring section 523. Parasitic resonance that occurs when multiple first semiconductor elements 1 are connected in parallel can occur not only through the loop path passing through the first electrode 11 and third electrode 13 of each first semiconductor element 1, but also through the loop path passing through the second electrode 12 and third electrode 13 of each first semiconductor element 1. Therefore, by extending the distance of the conductive path between each second electrode 12, parasitic resonance that occurs when multiple first semiconductor elements 1 are connected in parallel can be suppressed.

[0098] In semiconductor device A1, a wiring section 532 is interposed in the conduction path between the wiring section 522 to which the control terminal 62 is connected and the sixth electrode 23 of the second semiconductor element 2. With this configuration, the distance of the conduction path from each sixth electrode 23 to the control terminal 62 can be extended compared to when the connecting member 722 is directly connected to the wiring section 522. Therefore, the transmission path of the second drive signal from the control terminal 62 to the second semiconductor element 2 can be made longer, and the inductance component in the transmission path can be increased. As a result, semiconductor device A1 can suppress oscillation of the second drive signal.

[0099] In semiconductor device A1, multiple second semiconductor elements 2 are arranged along the x-direction. Furthermore, the control terminal 62 is located on one side of the multiple second semiconductor elements 2 in the x-direction (the x1 direction in the example of Figure 5). In this configuration, the second semiconductor element 2 located furthest to the x-direction tends to have a shorter conductive path distance from its sixth electrode 23 to the control terminal 62 when the connecting member 722 is directly connected to the wiring section 522 instead of the wiring section 532. In other words, the arrangement of the multiple second semiconductor elements 2 and the arrangement of the control terminal 62 makes oscillation of the second drive signal more likely. Therefore, in the second semiconductor element 2 where the conductive path distance is short, interposing the wiring section 532 in the conductive path between the sixth electrode 23 and the control terminal 62 to extend the conductive path distance from the sixth electrode 23 to the control terminal 62 is effective in suppressing oscillation of the second drive signal input to this second semiconductor element 2.

[0100] In semiconductor device A1, each second semiconductor element 2 is provided with one wiring section 532, and all second semiconductor elements 2 are electrically connected to the wiring section 522 via the wiring section 532. With this configuration, two wiring sections 532 are interposed in the conductive path between the sixth electrodes 23 of any two second semiconductor elements 2, so the distance of the conductive path between each sixth electrode 23 can be extended compared to when the connecting member 722 is directly connected to the wiring section 522. This makes it possible to suppress parasitic resonance that occurs when multiple second semiconductor elements 2 are connected in parallel, due to the formation of loop paths passing through the fourth electrode 21 and the sixth electrode 23 of each second semiconductor element 2. In other words, semiconductor device A1 can suppress parasitic resonance that occurs when multiple second semiconductor elements 2 are connected in parallel.

[0101] In semiconductor device A1, each insulating substrate 43 is positioned on the side of each second semiconductor element 2 in the x-direction where the control terminal 62 is located. Furthermore, the portion of each connecting member 732 connected to the wiring portion 522 (strip portion 522b) is positioned on the opposite side of each second semiconductor element 2 in the x-direction from where the control terminal 62 is located, compared to the portion connected to the wiring portion 532. This allows semiconductor device A1 to extend the conductive path from the sixth electrode 23 of each second semiconductor element 2 to the wiring portion 522 (strip portion 522b). In other words, the distance of the conductive path between each of the sixth electrodes 23 is extended in semiconductor device A1.

[0102] The semiconductor device A1 includes connecting members 722 and 732. Connecting member 722 connects the sixth electrode 23 of the second semiconductor element 2 to the wiring portion 532, and connecting member 732 connects the wiring portion 522 to the wiring portion 532. Each connecting member 722 and 732 is, for example, a bonding wire. Since each connecting member 722 and 732 is a bonding wire, their lengths can be easily adjusted. Therefore, by adjusting the length of each connecting member 722 and 732, the parasitic inductance component of each connecting member 722 and 732 can be adjusted, thereby adjusting the parasitic inductance component from the control terminal 62 to the sixth electrode 23 of the second semiconductor element 2. Thus, in semiconductor device A1, it is easy to fine-tune the parasitic inductance component from the control terminal 62 to the sixth electrode 23 of each second semiconductor element 2 according to the variations in the characteristics of each second semiconductor element 2.

[0103] In semiconductor device A1, each second semiconductor element 2 is provided with one wiring section 534, and all second semiconductor elements 2 are electrically connected to the wiring section 524 via the wiring section 534. With this configuration, since two wiring sections 534 are interposed in the conductive path between the fifth electrodes 22 of each second semiconductor element 2, the distance of the conductive path between each fifth electrode 22 can be extended compared to directly connecting the connecting member 724 to the wiring section 524. Parasitic resonance that occurs when multiple second semiconductor elements 2 are connected in parallel can occur not only through the loop path passing through the fourth electrode 21 and sixth electrode 23 of each second semiconductor element 2, but also through the loop path passing through the fifth electrode 22 and sixth electrode 23 of each second semiconductor element 2. Therefore, by extending the distance of the conductive path between each fifth electrode 22, parasitic resonance that occurs when multiple second semiconductor elements 2 are connected in parallel can be suppressed.

[0104] In semiconductor device A1, each wiring portion 531, 533 is formed on each insulating substrate 42. With this configuration, each wiring portion 512, 513, 521-528 formed on the main surface 411 of insulating substrate 41 can be easily separated from each wiring portion 531, 533. Similarly, each wiring portion 532, 534 is formed on each insulating substrate 43. With this configuration, each wiring portion 512, 513, 521-528 formed on the main surface 411 of insulating substrate 41 can be easily separated from each wiring portion 532, 534.

[0105] In semiconductor device A1, each insulating substrate 42 is placed on top of the strip-shaped portion 521b and the strip-shaped portion 523b, straddling them. However, each insulating substrate 42 should be positioned so that the wiring portion 531 is spaced apart from the wiring portion 521 and the wiring portion 523. For example, each insulating substrate 42 may be appropriately placed on top of the wiring portion 526, the wiring portion 512, and the wiring portion 528, or it may be placed on the main surface 411 of insulating substrate 41. Similarly, in semiconductor device A1, each insulating substrate 43 is placed on top of the strip-shaped portion 522b and the strip-shaped portion 524b, straddling them. However, each insulating substrate 43 should be positioned so that the wiring portion 532 is spaced apart from the wiring portions 522 and 524. For example, each insulating substrate 43 may be appropriately placed on top of the wiring portion 527, the wiring portion 513, and the wiring portion 528, or it may be placed on the main surface 411 of insulating substrate 41.

[0106] Figure 15 shows a semiconductor device A2 according to the second embodiment. Figure 15 is a plan view of the semiconductor device A2, and the sealing member 8 is indicated by dashed lines.

[0107] In semiconductor device A1, the number of insulating substrates 42 was the same as the number of first semiconductor elements 1. On the other hand, in semiconductor device A2, the number of insulating substrates 42 was less than the number of first semiconductor elements 1. In the example shown in Figure 15, there are two insulating substrates 42 for four first semiconductor elements 1, and two wiring sections 531 and two wiring sections 533 are formed on one insulating substrate 42. Similarly, in semiconductor device A1, the number of insulating substrates 43 was the same as the number of second semiconductor elements 2. On the other hand, in semiconductor device A2, the number of insulating substrates 43 was less than the number of second semiconductor elements 2. In the example shown in Figure 15, there are two insulating substrates 43 for four second semiconductor elements 2, and two wiring sections 532 and two wiring sections 534 are formed on one insulating substrate 43.

[0108] As shown in Figure 15, semiconductor device A2 also includes a wiring section 531, similar to semiconductor device A1. Therefore, the third electrode 13 of the first semiconductor element 1 is electrically connected to the wiring section 521 via the wiring section 531. As a result, semiconductor device A2 can suppress the oscillation of the first drive signal, similar to semiconductor device A1. In addition, semiconductor device A2 achieves the same effects as semiconductor device A1 through a configuration common to semiconductor device A1.

[0109] Figure 16 shows a semiconductor device A3 according to the third embodiment. Figure 16 is a plan view of the semiconductor device A3, in which the multiple lateral terminals 66 and sealing member 8 are omitted.

[0110] In semiconductor devices A1 and A2, the number of first semiconductor elements 1 and the number of wiring sections 531 were the same, but in semiconductor device A3, the number of wiring sections 531 was less than the number of first semiconductor elements 1. In the example shown in Figure 16, the third electrodes 13 of two of the four first semiconductor elements 1 are conductive to the wiring section 521 via the wiring section 531, while the third electrodes 13 of the other two first semiconductor elements 1 are conductive to the wiring section 521 without going through the wiring section 531. For the former two first semiconductor elements 1, the distance of the conductive path to the control terminal 61 is relatively short when each connecting member 721 is connected directly to the wiring section 521 instead of each wiring section 531, while for the latter two first semiconductor elements 1, the distance of the conductive path to the control terminal 61 is relatively long. Note that the number of multiple first semiconductor elements 1 and the number of wiring sections 531 are not limited to the example shown in Figure 16 and can be changed as appropriate.

[0111] Similarly, in semiconductor devices A1 and A2, the number of second semiconductor elements 2 and the number of wiring sections 532 were the same, while in semiconductor device A3, the number of wiring sections 532 was less than the number of second semiconductor elements 2. In the example shown in Figure 16, the sixth electrodes 23 of two of the four second semiconductor elements 2 are conductive to the wiring section 522 via the wiring section 532, while the sixth electrodes 23 of the other two second semiconductor elements 2 are conductive to the wiring section 522 without going through the wiring section 532. For the former two second semiconductor elements 2, the distance of the conductive path at the control terminal 62 is relatively short when each connecting member 722 is connected directly to the wiring section 522 instead of each wiring section 532, while for the latter two second semiconductor elements 2, the distance of the conductive path to the control terminal 62 is relatively long. Note that the number of multiple second semiconductor elements 2 and the number of wiring sections 532 are not limited to the example shown in Figure 16 and can be changed as appropriate.

[0112] As shown in Figure 16, semiconductor device A3 also includes a wiring section 531, similar to semiconductor device A1. Therefore, the third electrode 13 of the first semiconductor element 1 is electrically connected to the wiring section 521 via the wiring section 531. As a result, semiconductor device A3 can suppress oscillation of the first drive signal, similar to semiconductor device A1. In addition, semiconductor device A3 has a configuration common to each of semiconductor devices A1 and A2, and thus achieves the same effects as each of semiconductor devices A1 and A2.

[0113] In semiconductor device A3, among the multiple first semiconductor elements 1, if each connecting member 721 is connected directly to the wiring section 521 instead of each wiring section 531, the distance of the conductive path to the control terminal 61 is relatively short for the first semiconductor element 1, and the wiring section 521 is connected via each wiring section 531. On the other hand, among the multiple first semiconductor elements 1, if each connecting member 721 is connected directly to the wiring section 521 instead of each wiring section 531, the distance of the conductive path to the control terminal 61 is relatively long for the first semiconductor element 1, and the wiring section 521 is connected via each wiring section 531. This configuration makes it possible to reduce the distance difference from the control terminal 61 to the third electrode 13 of each first semiconductor element 1. The same applies to the multiple second semiconductor elements 2, and it is possible to reduce the distance difference from the control terminal 62 to the sixth electrode 23 of each second semiconductor element 2.

[0114] Figures 17 to 19 show a semiconductor device A4 according to the fourth embodiment. Figure 17 is a perspective view showing the semiconductor device A4. Figure 18 is a plan view showing the semiconductor device A4, with a part of the case 9 (top plate 92), which will be described later, omitted. Figure 19 is a cross-sectional view along the line XIX-XIX in Figure 18, with the top plate 92 of the case 9 shown by a dashed line.

[0115] In semiconductor devices A1 to A3, multiple first semiconductor elements 1 were mounted on a conductive plate 31, and multiple second semiconductor elements 2 were mounted on a conductive plate 32. However, in semiconductor device A4, multiple first semiconductor elements 1 are joined to a wiring section 511, and multiple second semiconductor elements 2 are joined to a wiring section 513. Furthermore, in semiconductor devices A1 to A3, the first power terminal section 501 and the second power terminal section 502 overlap in a plan view, and the third power terminal section 503 and the fourth power terminal section 504 overlap in a plan view. However, in semiconductor device A4, the first power terminal section 501 and the second power terminal section 502 are adjacent in a plan view, and the third power terminal section 503 and the fourth power terminal section 504 are adjacent in a plan view.

[0116] As shown in Figures 17 to 19, the semiconductor device A4 includes a case 9 instead of a sealing member 8. The case 9 is formed in a substantially rectangular parallelepiped shape and houses a plurality of first semiconductor elements 1, a plurality of second semiconductor elements 2, a plurality of insulating substrates 41 to 43, and a plurality of wiring sections 511 to 513, 521 to 524, 531 to 534, etc. The case 9 is made of a synthetic resin that has electrical insulating properties and excellent heat resistance, such as PPS (polyphenylene sulfide).

[0117] Case 9 comprises a heat sink 91 as a bottom plate, a frame 93 fixed to the z2-direction surface of the heat sink 91, and a top plate 92 fixed to the frame 93. The top plate 92 closes the z2-direction side of the frame 93 and faces the heat sink 91 which closes the z1-direction side of the frame 93. The top plate 92, the heat sink 91, and the frame 93 partition the space inside Case 9 to house the above components.

[0118] As shown in Figures 17 and 18, case 9 includes terminal blocks 941 to 944. These terminal blocks 941 to 944 are integrally formed with the frame 93. Terminal blocks 941 and 942 are connected to the side wall 931 (see Figure 18) on the x2 direction side of the frame 93. Terminal blocks 941 and 942 are arranged along the y direction. Terminal block 941 is located further in the y2 direction than terminal block 942. Terminal blocks 943 and 944 are connected to the side wall 932 (see Figure 18) on the x1 direction side of the frame 93. Terminal blocks 943 and 944 are arranged along the y direction. Terminal block 943 is located further in the y2 direction than terminal block 944.

[0119] As shown in Figures 18 and 19, semiconductor device A4 includes a plurality of wiring sections 511-513, 521-524, 531-534, and 541. As can be seen from Figures 18 and 19, of these wiring sections 511-513, 521-524, 531-534, and 541, two wiring sections 511, two wiring sections 512, two wiring sections 513, and multiple wiring sections 521-524 are formed on the main surface 411 of the insulating substrate 41. In addition, as shown in Figure 19, wiring section 541 is formed on the back surface 412 of the insulating substrate 41.

[0120] The two wiring sections 511 are arranged along the x-direction and spaced apart from each other. The two wiring sections 511 are electrically connected to each other by a connecting member 519a. The connecting member 519a is a conductive plate material, for example, made of copper or a copper alloy. The constituent material of the connecting member 519a is not limited to copper or a copper alloy. Multiple first semiconductor elements 1 are joined to the two wiring sections 511, and the first electrode 11 (drain electrode) of each first semiconductor element 1 is electrically connected.

[0121] The two wiring sections 512 are arranged along the x-direction and spaced apart from each other. The two wiring sections 512 are electrically connected to each other by a conductive connecting member 519b. The connecting member 519b is a conductive plate material, for example, made of copper or a copper alloy. The constituent material of the connecting member 519b is not limited to copper or a copper alloy. The two wiring sections 512 are electrically connected to the fifth electrode 22 (source electrode) of each second semiconductor element 2 via a plurality of connecting members 712.

[0122] The two wiring sections 513 are arranged along the x-direction and spaced apart from each other. The two wiring sections 513 are electrically connected to each other by a conductive connecting member 519c. The connecting member 519c is a conductive plate material, for example, made of copper or a copper alloy. The constituent material of the connecting member 519c is not limited to copper or a copper alloy. The two wiring sections 513 are electrically connected to the second electrode 12 (source electrode) of each first semiconductor element 1 via a plurality of connecting members 711. In addition, the two wiring sections 513 are joined to a plurality of second semiconductor elements 2 and are electrically connected to the fourth electrode 21 (drain electrode) of each second semiconductor element 2.

[0123] As shown in Figure 18, the wiring section 521 includes two spaced-apart strips 521b. The two strips 521b are arranged along the x-direction and spaced apart from each other. The two strips 521b are electrically connected by a connecting member 751. The wiring section 522 includes two spaced-apart strips 522b. The two strips 522b are arranged along the x-direction and spaced apart from each other. The two strips 522b are electrically connected by a connecting member 752. The wiring section 523 includes two spaced-apart strips 523b. The two strips 523b are arranged along the x-direction and spaced apart from each other. The two strips 523b are electrically connected by a connecting member 753. The wiring section 524 includes two spaced-apart strips 524b. The two strip-shaped portions 524b are arranged along the x-direction and spaced apart from each other. The two strip-shaped portions 524b are electrically connected by a connecting member 754. Each connecting member 751-754 is, for example, a bonding wire. The constituent material of each connecting member 751-754 is gold, copper, aluminum, or an alloy containing any of these.

[0124] The wiring section 541 is formed, for example, on substantially the entire back surface 412 of the insulating substrate 41. The extent of the wiring section 541 is not particularly limited. The wiring section 541 is made of copper or a copper alloy. The wiring section 541 is joined to the heat sink 91.

[0125] The semiconductor device A4 includes a first power terminal 601, a second power terminal 602, a third power terminal 603, and a fourth power terminal 604.

[0126] The first power terminal 601 is joined to the wiring section 511 inside the case 9. As a result, the first power terminal 601 is electrically connected to each of the first electrodes 11 (drain electrodes) of the plurality of first semiconductor elements 1. The first power terminal 601 includes the first power terminal section 501. As shown in Figures 17 and 18, the first power terminal section 501 is located on the upper surface (the surface in the z2 direction) of the terminal block 941.

[0127] The second power terminal 602 is joined to the wiring section 512 inside the case 9. As a result, the second power terminal 602 is electrically connected to each of the fifth electrodes 22 (source electrodes) of the multiple second semiconductor elements 2. The second power terminal 602 includes the second power terminal section 502. As shown in Figures 17 and 18, the second power terminal section 502 is located on the upper surface (the surface in the z2 direction) of the terminal block 942.

[0128] The third power terminal 603 and the fourth power terminal 604 are each joined to the wiring section 513 inside the case 9. As a result, the third power terminal 603 and the fourth power terminal 604 are electrically connected to the second electrodes 12 (source electrodes) of each of the multiple first semiconductor elements 1 and the fourth electrodes 21 (drain electrodes) of each of the multiple second semiconductor elements 2. The third power terminal 603 includes the third power terminal section 503. As shown in Figures 17 and 18, the third power terminal section 503 is located on the upper surface (the surface on the z2 direction side) of the terminal block 943. The fourth power terminal 604 includes the fourth power terminal section 504. As shown in Figures 17 and 18, the fourth power terminal section 504 is located on the upper surface (the surface on the z2 direction side) of the terminal block 944.

[0129] In semiconductor device A4, the control terminal 61 is not joined to the wiring section 521, but is electrically connected to the wiring section 521 via a connecting member 741 inside the case 9. The control terminal 62 is not joined to the wiring section 522, but is electrically connected to the wiring section 522 via a connecting member 742 inside the case 9. The detection terminal 63 is not joined to the wiring section 523, but is electrically connected to the wiring section 523 via a connecting member 743 inside the case 9. The detection terminal 64 is not joined to the wiring section 524, but is electrically connected to the wiring section 524 via a connecting member 744 inside the case 9. Each connecting member 741 to 744 is, for example, a bonding wire. The constituent material of each connecting member 741 to 744 is gold, copper, aluminum, or an alloy containing any of these.

[0130] As shown in Figures 18 and 19, semiconductor device A4 also includes a wiring section 531, similar to semiconductor device A1. Therefore, the third electrode 13 of the first semiconductor element 1 is electrically connected to the wiring section 521 via the wiring section 531. As a result, semiconductor device A4 can suppress oscillation of the first drive signal, similar to semiconductor device A1. In addition, semiconductor device A4 achieves the same effects as semiconductor devices A1 to A3 through a configuration common to each of the semiconductor devices A1 to A3.

[0131] Figure 20 shows a semiconductor device A5 according to the fifth embodiment. Figure 20 is a plan view of the semiconductor device A5, and the sealing member 8 is indicated by dashed lines.

[0132] Semiconductor devices A1 to A4 each had multiple first semiconductor elements 1 and multiple second semiconductor elements 2. On the other hand, semiconductor device A5 had multiple first semiconductor elements 1 but no second semiconductor elements 2.

[0133] As shown in Figure 20, in semiconductor device A5, each first semiconductor element 1 is joined to the wiring section 511. In semiconductor device A5, there are fewer wiring sections compared to semiconductor devices A1 to A4 because it does not have multiple second semiconductor elements 2. In semiconductor device A5, the wiring section 525 is electrically connected to the wiring section 511 via the connecting member 725, thereby electrically connecting to the first electrode 11 (drain electrode) of each first semiconductor element 1.

[0134] As shown in Figure 20, semiconductor device A5 also includes a wiring section 531, similar to semiconductor device A1. Therefore, the third electrode 13 of the first semiconductor element 1 is electrically connected to the wiring section 521 via the wiring section 531. As a result, semiconductor device A5 can suppress oscillation of the first drive signal, similar to semiconductor device A1. In addition, semiconductor device A5 has a configuration common to each of semiconductor devices A1 to A4, and thus achieves the same effects as each of semiconductor devices A1 to A4.

[0135] The configuration described with reference to Figure 20, which does not include any of the multiple second semiconductor elements 2, is not limited to the configuration shown in semiconductor device A5, but may be applied as appropriate to each of the semiconductor devices A1 to A4.

[0136] Figures 21 to 23 show a semiconductor device A6 according to the sixth embodiment. Figure 21 is a perspective view showing the semiconductor device A6. Figure 22 is a plan view showing the semiconductor device A6, in which the sealing member 8 is indicated by dashed lines. Figure 23 is a cross-sectional view along the line XXIII-XXIII in Figure 22.

[0137] As shown in Figures 21 to 23, semiconductor device A6 comprises a plurality of first semiconductor elements 1, a plurality of second semiconductor elements 2, a support member 3, a plurality of insulating substrates 41 to 43, a plurality of wiring sections 511 to 514, 521 to 528, 531 to 534, a plurality of metal members 58, 59, a plurality of control terminals 61, a plurality of control terminals 62, a plurality of detection terminals 63, a plurality of detection terminals 64, a detection terminal 63, a plurality of side terminals 66, a plurality of connecting members 7, and a sealing member 8. The plurality of connecting members 7 include a plurality of connecting members 711, 712, 721 to 724, as shown in Figure 22. In semiconductor device A6, each first semiconductor element 1 is an example of a "semiconductor element". Also, each control terminal 61 (62) is an example of a "control terminal", and each wiring section 521 (522) is an example of a "wiring section". Furthermore, each connecting member 721 (722) is an example of a "connecting member," and the insulating substrate 42 (43) is an example of an "insulating substrate."

[0138] In semiconductor devices A1 to A5, a first drive signal was input to each first semiconductor element 1 from a common control terminal 61. On the other hand, in semiconductor device A6, each of the multiple first semiconductor elements 1 is provided with its own control terminal 61. Similarly, in semiconductor devices A1 to A5, a second drive signal was input to each second semiconductor element 2 from a common control terminal 62. On the other hand, in semiconductor device A6, each of the multiple second semiconductor elements 2 is provided with its own control terminal 62.

[0139] In semiconductor devices A1 to A5, a first detection signal for each first semiconductor element 1 was output from a common detection terminal 63. On the other hand, in semiconductor device A6, each of the multiple first semiconductor elements 1 is provided with its own detection terminal 63. Similarly, in semiconductor devices A1 to A5, a second detection signal for each second semiconductor element 2 was output from a common detection terminal 64. On the other hand, in semiconductor device A6, each of the multiple second semiconductor elements 2 is provided with its own detection terminal 64.

[0140] As shown in Figure 23, each of the control terminals 61 includes a holder 611 and a metal pin 612. The holder 611 is made of a conductive material. The holder 611 is cylindrical. The holder 611 is joined to the wiring section 531. The metal pin 612 is press-fitted into the holder 611 and extends in the z direction. The metal pin 612 protrudes upward in the z direction from the resin main surface 81 of the sealing member 8, and a portion of it is exposed from the sealing member 8.

[0141] As shown in Figures 21 to 23, each of the control terminals 62 includes a holder 621 and a metal pin 622. Each of the detection terminals 63 includes a holder 631 and a metal pin 632. Each of the detection terminals 64 includes a holder 641 and a metal pin 642. The detection terminal 65 includes a holder 651 and a metal pin 652. Each of the holders 621, 631, 641, and 651 is configured in the same way as holder 611. Each of the holders 621 is connected to each wiring section 532, each of the holders 631 is connected to each wiring section 533, each of the holders 641 is connected to each wiring section 534, and each of the holders 651 is connected to the wiring section 525. Each of the metal pins 622, 632, 642, and 652 is configured in the same way as each of the metal pins 612.

[0142] In the illustrated example, semiconductor device A6 has wiring sections 521 and 523 formed on the main surface 411 of the insulating substrate 41, similar to semiconductor devices A1 to A3 (see Figures 22 and 23). However, these wiring sections 521 and 523 do not necessarily have to be formed. In this case, each insulating substrate 42 may be placed on the main surface 411 of the insulating substrate 41, or each insulating substrate 42 may not be provided, and each wiring section 531 and 533 may be formed directly on the main surface 411 of the insulating substrate 41. Similarly, semiconductor device A6 has wiring sections 522 and 524 formed on the main surface 411 of the insulating substrate 41, similar to semiconductor devices A1 to A3. However, these wiring sections 522 and 524 do not necessarily have to be formed. In this case, each insulating substrate 43 may be arranged on the main surface 411 of the insulating substrate 41, or each wiring section 532 and each wiring section 533 may be formed directly on the main surface 411 of the insulating substrate 41 without each insulating substrate 43.

[0143] The semiconductor device A6 is equipped with multiple control terminals 61. One control terminal 61 is provided for each of the multiple first semiconductor elements 1's third electrodes 13. With this configuration, when the control device is connected to the semiconductor device A6, it becomes possible to individually input a first drive signal from the control device to each of the multiple first semiconductor elements 1. As a result, the semiconductor device A6 can suppress oscillation of the first drive signal by lengthening the transmission path of the first drive signal on the control device side. Similarly, the semiconductor device A6 is equipped with multiple control terminals 62. One control terminal 62 is provided for each of the multiple second semiconductor elements 2's sixth electrodes 23. With this configuration, when the control device is connected to the semiconductor device A6, it becomes possible to individually input a second drive signal from the control device to each of the multiple second semiconductor elements 2. As a result, the semiconductor device A6 can suppress oscillation of the second drive signal by lengthening the transmission path of the second drive signal on the control device side.

[0144] The semiconductor device A6 is equipped with multiple detection terminals 63. One detection terminal 63 is provided for each of the multiple first semiconductor elements 1's second electrodes 12. With this configuration, when the control device is connected to the semiconductor device A6, it is possible to output a first detection signal to the control device individually for each of the multiple first semiconductor elements 1. This allows the semiconductor device A6 to individually confirm the conductivity state of each first semiconductor element 1. Similarly, the semiconductor device A6 is equipped with multiple detection terminals 64. One detection terminal 64 is provided for each of the multiple second semiconductor elements 2's fifth electrodes 22. With this configuration, when the control device is connected to the semiconductor device A6, it is possible to output a second detection signal to the control device individually for each of the multiple second semiconductor elements 2. This allows the semiconductor device A6 to individually confirm the conductivity state of each second semiconductor element 2.

[0145] The semiconductor devices relating to this disclosure are not limited to the embodiments described above. The specific configuration of each part of the semiconductor device relating to this disclosure can be modified in various ways. For example, this disclosure includes the embodiments described in the following appendix. Note 1. A plurality of first semiconductor elements, each having a first electrode, a second electrode, and a third electrode, wherein the connection between the first electrode and the second electrode is controlled on and off in accordance with a first drive signal input to the third electrode, The first control terminal to which the first drive signal is input, The first wiring section to which the first control terminal is connected, At least one second wiring section spaced apart from the first wiring section, At least one first connecting member that provides electrical conductivity between the first wiring section and the second wiring section, At least one second connecting member that provides electrical conductivity between the second wiring portion and the third electrode of any of the plurality of first semiconductor elements, It is equipped with, A semiconductor device in which the first electrodes of each of the plurality of first semiconductor elements are electrically connected to each other, and the second electrodes of each of the plurality of first semiconductor elements are electrically connected to each other. Note 2. The at least one second wiring section includes a plurality of second wiring sections, The at least one first connecting member includes a plurality of first connecting members, The at least one second connecting member includes a plurality of second connecting members, The aforementioned plurality of second wiring sections are spaced apart from each other. The plurality of first connecting members are connected to the first wiring section and are each connected to the plurality of second wiring sections. The semiconductor device according to Appendix 1, wherein the plurality of second connecting members are each connected to the plurality of second wiring sections and each connected to the third electrode of each of the plurality of first semiconductor elements. Note 3. The first insulating substrate further comprises a first main surface and a first back surface that are spaced apart from each other in the thickness direction, The semiconductor device described in Appendix 2, wherein the first wiring portion is formed on the first main surface. Note 4. Each further comprises at least one second insulating substrate having a second main surface and a second back surface spaced apart from each other in the thickness direction, The second back surface faces the first main surface, The semiconductor device according to Appendix 3, wherein at least one of the plurality of second wiring portions is formed on the second main surface. Note 5. The at least one second insulating substrate includes a plurality of second insulating substrates, The semiconductor device according to Appendix 4, wherein the plurality of second wiring portions are formed on the second main surface of each of the plurality of second insulating substrates. Note 6. The plurality of first semiconductor elements are arranged along a first direction perpendicular to the thickness direction, The first wiring portion includes a first strip-shaped portion extending along the first direction, The semiconductor device according to Appendix 5, wherein the first strip-shaped portion is located on one side of the plurality of first semiconductor elements in a second direction that is orthogonal to both the thickness direction and the first direction. Note 7. A first detection terminal for detecting the conductivity state of the second electrode of each of the plurality of first semiconductor elements, The third wiring section to which the first detection terminal is connected, Multiple fourth wiring sections that are spaced apart from each other, each separated from the third wiring section, A plurality of third connecting members that connect the plurality of fourth wiring sections to the third wiring section, A plurality of fourth connecting members that connect the plurality of fourth wiring portions to the second electrodes of each of the plurality of first semiconductor elements, The semiconductor device described in Appendix 6, further comprising the features described therein. Note 8. The third wiring portion includes a second strip-shaped portion extending along the first direction, The first strip-shaped portion and the second strip-shaped portion have their respective longitudinal directions parallel to each other. The semiconductor device according to Appendix 7, wherein each of the plurality of second insulating substrates spans the first strip portion and the second strip portion. Note 9. Each of the following is a plurality of second semiconductor elements, each having a fourth electrode, a fifth electrode, and a sixth electrode, and the on / off control between the fourth electrode and the fifth electrode is performed by a second drive signal input to the sixth electrode. The second control terminal to which the second drive signal is input, The fifth wiring section to which the second control terminal is connected, At least one sixth wiring section spaced apart from the fifth wiring section, At least one fifth connecting member that provides electrical conductivity between the fifth wiring section and the sixth wiring section, The device further comprises at least one sixth connecting member that provides electrical conductivity between the sixth wiring portion and the sixth electrode of any of the plurality of second semiconductor elements, The fourth electrodes of each of the plurality of second semiconductor elements are electrically connected to each other, and the fifth electrodes of each of the plurality of second semiconductor elements are electrically connected to each other. The semiconductor device according to any one of appendices 6 to 8, wherein the second electrode of each of the plurality of first semiconductor elements is electrically connected to the fourth electrode of each of the plurality of second semiconductor elements. Note 10. The at least one sixth wiring section includes a plurality of sixth wiring sections, The at least one fifth connecting member includes a plurality of fifth connecting members, The at least one sixth connecting member includes a plurality of sixth connecting members, The aforementioned plurality of sixth wiring sections are spaced apart from each other. The plurality of fifth connecting members are connected to the fifth wiring section and are each connected to the plurality of sixth wiring sections. The semiconductor device according to Appendix 9, wherein the plurality of sixth connecting members are each connected to the plurality of sixth wiring portions and each connected to the sixth electrode of each of the plurality of second semiconductor elements. Note 11. Each further comprises at least one third insulating substrate having a third main surface and a third back surface spaced apart from each other in the thickness direction, The third back surface faces the first main surface, The semiconductor device according to Appendix 10, wherein at least one of the plurality of sixth wiring portions is formed on the third main surface. Note 12. The at least one third insulating substrate includes a plurality of third insulating substrates, The semiconductor device according to Appendix 11, wherein the plurality of sixth wiring portions are formed on the third main surface of each of the plurality of third insulating substrates. Note 13. The plurality of second semiconductor elements are arranged along the first direction and are located in the second direction on the side opposite to the side on which the first strip-shaped portion is arranged relative to the plurality of first semiconductor elements. The fifth wiring portion includes a third strip-shaped portion extending along the first direction, The semiconductor device according to Appendix 12, wherein the third strip-shaped portion is located on one side in the second direction with respect to the plurality of second semiconductor elements. Note 14. A second detection terminal for detecting the conductivity state of each of the fifth electrodes of the plurality of second semiconductor elements, The seventh wiring section to which the second detection terminal is connected, Multiple eighth wiring sections that are spaced apart from each other, each of which is spaced apart from the seventh wiring section, A plurality of seventh connecting members that connect the plurality of eighth wiring sections to the seventh wiring section, A plurality of eighth connecting members that connect the plurality of eighth wiring sections to the fifth electrode of each of the plurality of second semiconductor elements, The semiconductor device described in Appendix 13, further comprising the features described therein. Note 15. The seventh wiring portion includes a fourth strip-shaped portion extending along the first direction, The third and fourth strip-shaped portions have their respective longitudinal directions parallel to each other. The semiconductor device according to Appendix 14, wherein each of the plurality of third insulating substrates spans the third strip portion and the fourth strip portion. Note 16. Each of the plurality of first semiconductor elements has a first element main surface and a first element back surface, and in each first semiconductor element, the first electrode is formed on the first element back surface, and the second electrode and the third electrode are formed on the first element main surface. The semiconductor device according to any one of appendices 13 to 15, wherein each of the plurality of second semiconductor elements has a second element main surface and a second element back surface, and in each second semiconductor element, the fourth electrode is formed on the second element back surface, and the fifth electrode and the sixth electrode are formed on the second element main surface. Note 17. A first mounting section on which the plurality of first semiconductor elements are mounted, A second mounting section on which the plurality of second semiconductor elements are mounted, Furthermore, The first mounting portion and the second mounting portion are each made of a conductive material and are spaced apart from each other. The first electrodes of each of the plurality of first semiconductor elements are electrically connected to each other via the first mounting portion. The semiconductor device according to Appendix 16, wherein the fourth electrodes of each of the plurality of second semiconductor elements are electrically connected to each other via the second mounting portion. Note 18. The first mounting portion and the second mounting portion face the first back surface, The first insulating substrate includes a plurality of first openings and a plurality of second openings, each penetrating from the first main surface to the first back surface in the thickness direction, The plurality of first openings each surround the plurality of first semiconductor elements when viewed in the thickness direction, The semiconductor device according to Appendix 17, wherein the plurality of second openings surround the plurality of second semiconductor elements when viewed in the thickness direction. Note 19. A first power terminal portion that conducts to the first electrode of each of the plurality of first semiconductor elements, A second power terminal portion that conducts to the fifth electrode of each of the plurality of second semiconductor elements, A third power terminal portion that conducts to the second electrode of each of the plurality of first semiconductor elements and the fourth electrode of each of the plurality of second semiconductor elements, Furthermore, A DC voltage is applied between the first power terminal and the second power terminal. The DC voltage is converted to an AC voltage by the on / off control of the plurality of first semiconductor elements and the plurality of second semiconductor elements. The aforementioned AC voltage is output from the third power terminal, and is a semiconductor device according to any one of the appendices 9 to 18. Note 20. A plurality of semiconductor elements, each having a first electrode, a second electrode, and a third electrode, wherein the connection between the first electrode and the second electrode is controlled on and off in accordance with a drive signal input to the third electrode, Each of the control terminals to which the aforementioned drive signal is input, Multiple wiring sections that are electrically connected to the multiple control terminals and to which the multiple control terminals are joined, A plurality of connecting members that connect the third electrode of each of the plurality of semiconductor elements and the plurality of wiring portions, An insulating substrate having a main surface and a back surface spaced apart in the thickness direction, with a plurality of wiring portions formed on the main surface, It is equipped with, A semiconductor device in which each of the plurality of control terminals extends in the direction in which the main surface faces in the thickness direction. [Explanation of Symbols]

[0146] A1~A6: Semiconductor device 1: First semiconductor device 1a: Main surface of the element 1b: Back surface of the element 11: 1st electrode 12: 2nd electrode 13: Third electrode 19: Conductive bonding material 2: Second semiconductor element 2a: Main surface of the element 2b: Back surface of the element 21: Fourth electrode 22: 5th electrode 23: 6th electrode 29: Conductive bonding material 3: Support member 31,32: Conductive plate 31a,32a: Mounting surface 319,329: Joining material 33,34: Insulating board 41: Insulating substrate 411: Main surface 412: Reverse side 413: Through hole 414: Through hole 415: Opening 416: Opening 42,43: Insulating substrate 421,431: Main side 422,432: Reverse side 501: First power terminal section 502: Second power terminal section 503: Third power terminal section 504: Fourth power terminal section 511~514: Wiring section 511a, 514a: Opening section 511b, 513a, 514b: Through hole 519a, 519b, 519c: Connecting members 521~528: Wiring section 521a, 522a, 523a, 524a: Pad section 521b, 522b, 523b, 524b: Band-shaped area 521c, 522c, 523c, 524c: Connection part 525a: Through hole 531~534: Wiring section 541: Wiring section 58, 59: Metal components 61, 62: Control terminals 63-65: Detection terminals 66: Side terminals 611, 621, 631, 641, 651: Holder 612, 622, 632, 642, 652: Metal pins 601: 1st power terminal 602: 2nd power terminal 603: 3rd power terminal 604: 4th power terminal 7: Connecting member 711, 712: Connecting member 721-725: Connecting members 731-734: Connecting members 741-744: Connecting members 751-754: Connecting members 8: Sealing member 81: Resin main surface 82: Resin back surface 831~834: Resin side surface 9: Case 91: Heat sink 92: Top panel 93: Frame 931,932: Side wall 941~944: Terminal block

Claims

1. A plurality of first semiconductor elements, each having a first electrode, a second electrode, and a third electrode, wherein the connection between the first electrode and the second electrode is controlled on and off in accordance with a first drive signal input to the third electrode, The first control terminal to which the first drive signal is input, The first wiring section to which the first control terminal is connected, At least one second wiring section spaced apart from the first wiring section, A first insulating substrate having a first main surface and a first back surface spaced apart from each other in the thickness direction, A second insulating substrate having a second main surface and a second back surface spaced apart from each other in the thickness direction, Multiple connecting members that electrically connect two parts that are spaced apart from each other, It is equipped with, The plurality of connecting members include at least one first connecting member that provides electrical conductivity between the first wiring portion and the at least one second wiring portion, and at least one second connecting member that provides electrical conductivity between the at least one second wiring portion and the third electrode of any of the plurality of first semiconductor elements. The first electrodes of each of the plurality of first semiconductor elements are electrically connected to each other, and the second electrodes of each of the plurality of first semiconductor elements are electrically connected to each other. The first wiring section is formed on the first main surface, The second back surface faces the first main surface, The second main surface has at least one second wiring section formed thereon. A semiconductor device wherein, when viewed in the thickness direction, a portion of at least one second insulating substrate overlaps a portion of the first insulating substrate.

2. The semiconductor device according to claim 1, wherein, when viewed in the thickness direction, the entirety of at least one second insulating substrate overlaps the first insulating substrate.

3. The semiconductor device according to claim 1 or claim 2, wherein the first control terminal includes a portion extending in the thickness direction.

4. The at least one second wiring section includes a plurality of second wiring sections, The at least one first connecting member includes a plurality of first connecting members, The at least one second connecting member includes a plurality of second connecting members, The aforementioned plurality of second wiring sections are spaced apart from each other. The plurality of first connecting members are connected to the first wiring section and are each connected to the plurality of second wiring sections. The semiconductor device according to any one of claims 1 to 3, wherein the plurality of second connecting members are each connected to the plurality of second wiring portions and each connected to the third electrode of each of the plurality of first semiconductor elements.

5. The at least one second insulating substrate includes a plurality of second insulating substrates, The semiconductor device according to claim 4, wherein the plurality of second wiring portions are formed on the second main surface of each of the plurality of second insulating substrates.

6. The plurality of first semiconductor elements are arranged along a first direction perpendicular to the thickness direction, The first wiring portion includes a first strip-shaped portion extending along the first direction, The semiconductor device according to claim 5, wherein the first strip-shaped portion is located on one side of the plurality of first semiconductor elements in a second direction that is perpendicular to both the thickness direction and the first direction.

7. A first detection terminal for detecting the conductivity state of the second electrode of each of the plurality of first semiconductor elements, The third wiring section to which the first detection terminal is connected, Multiple fourth wiring sections that are spaced apart from each other, each separated from the third wiring section, It also has the following features: The semiconductor device according to claim 6, wherein the plurality of connecting members include a plurality of third connecting members that connect the plurality of fourth wiring portions to the third wiring portions, and a plurality of fourth connecting members that connect the plurality of fourth wiring portions to the second electrodes of each of the plurality of first semiconductor elements, respectively.

8. The third wiring portion includes a second strip-shaped portion extending along the first direction, The first strip-shaped portion and the second strip-shaped portion have their respective longitudinal directions parallel to each other. The semiconductor device according to claim 7, wherein each of the plurality of second insulating substrates spans the first strip portion and the second strip portion.

9. Each of the following is a plurality of second semiconductor elements, each having a fourth electrode, a fifth electrode, and a sixth electrode, and the on / off control between the fourth electrode and the fifth electrode is performed by a second drive signal input to the sixth electrode. The second control terminal to which the second drive signal is input, The fifth wiring section to which the second control terminal is connected, At least one sixth wiring section spaced apart from the fifth wiring section, It also has the following features: The plurality of connecting members include at least one fifth connecting member that provides electrical conductivity between the fifth wiring portion and the at least one sixth wiring portion, and at least one sixth connecting member that provides electrical conductivity between the at least one sixth wiring portion and the sixth electrode of any of the plurality of second semiconductor elements. The fourth electrodes of each of the plurality of second semiconductor elements are electrically connected to each other, and the fifth electrodes of each of the plurality of second semiconductor elements are electrically connected to each other. The semiconductor device according to any one of claims 6 to 8, wherein the second electrode of each of the plurality of first semiconductor elements is electrically connected to the fourth electrode of each of the plurality of second semiconductor elements.

10. The semiconductor device according to claim 9, wherein the second control terminal includes a portion extending in the thickness direction.

11. The at least one sixth wiring section includes a plurality of sixth wiring sections, The at least one fifth connecting member includes a plurality of fifth connecting members, The at least one sixth connecting member includes a plurality of sixth connecting members, The plurality of sixth wiring sections are spaced apart from each other. The plurality of fifth connecting members are connected to the fifth wiring section and are each connected to the plurality of sixth wiring sections. The semiconductor device according to claim 9 or claim 10, wherein the plurality of sixth connecting members are each connected to the plurality of sixth wiring portions and each connected to the sixth electrode of each of the plurality of second semiconductor elements.

12. The invention further comprises at least one third insulating substrate having a third main surface and a third back surface that are spaced apart from each other in the thickness direction, The third back surface faces the first main surface, The semiconductor device according to claim 11, wherein at least one of the plurality of sixth wiring portions is formed on the third main surface.

13. The at least one third insulating substrate includes a plurality of third insulating substrates, The semiconductor device according to claim 12, wherein the plurality of sixth wiring portions are formed on the third main surface of each of the plurality of third insulating substrates.

14. The plurality of second semiconductor elements are arranged along the first direction and are located on the side opposite to the side on which the first strip-shaped portion is arranged relative to the plurality of first semiconductor elements in the second direction. The fifth wiring portion includes a third strip-shaped portion extending along the first direction, The semiconductor device according to claim 13, wherein the third strip-shaped portion is located on one side in the second direction with respect to the plurality of second semiconductor elements.

15. A second detection terminal for detecting the conductivity state of each of the fifth electrodes of the plurality of second semiconductor elements, The seventh wiring section to which the second detection terminal is connected, Multiple eighth wiring sections that are spaced apart from each other, each of which is spaced apart from the seventh wiring section, It also has the following features: The semiconductor device according to claim 14, wherein the plurality of connecting members include a plurality of seventh connecting members that connect the plurality of eighth wiring portions to the seventh wiring portion, and a plurality of eighth connecting members that connect the plurality of eighth wiring portions to the fifth electrode of each of the plurality of second semiconductor elements, respectively.

16. The seventh wiring portion includes a fourth strip-shaped portion extending along the first direction, The third and fourth strip-shaped portions have their respective longitudinal directions parallel to each other. The semiconductor device according to claim 15, wherein each of the plurality of third insulating substrates spans the third strip portion and the fourth strip portion.

17. Each of the plurality of first semiconductor elements has a first element main surface and a first element back surface, and in each first semiconductor element, the first electrode is formed on the first element back surface, and the second electrode and the third electrode are formed on the first element main surface. The semiconductor device according to any one of claims 14 to 16, wherein each of the plurality of second semiconductor elements has a second element main surface and a second element back surface, and in each second semiconductor element, the fourth electrode is formed on the second element back surface, and the fifth electrode and the sixth electrode are formed on the second element main surface.

18. A first mounting section on which the plurality of first semiconductor elements are mounted, A second mounting section on which the plurality of second semiconductor elements are mounted, Furthermore, The first mounting portion and the second mounting portion are each made of a conductive material and are spaced apart from each other. The first electrodes of each of the plurality of first semiconductor elements are electrically connected to each other via the first mounting portion. The semiconductor device according to claim 17, wherein the fourth electrodes of each of the plurality of second semiconductor elements are electrically connected to each other via the second mounting portion.

19. The first mounting portion and the second mounting portion face the first back surface, The first insulating substrate includes a plurality of first openings and a plurality of second openings, each penetrating from the first main surface to the first back surface in the thickness direction, The plurality of first openings each surround the plurality of first semiconductor elements when viewed in the thickness direction, The semiconductor device according to claim 18, wherein the plurality of second openings surround the plurality of second semiconductor elements when viewed in the thickness direction.

20. A first power terminal portion that conducts to the first electrode of each of the plurality of first semiconductor elements, A second power terminal portion that conducts to the fifth electrode of each of the plurality of second semiconductor elements, A third power terminal portion that conducts to the second electrode of each of the plurality of first semiconductor elements and the fourth electrode of each of the plurality of second semiconductor elements, Furthermore, A DC voltage is applied between the first power terminal and the second power terminal. The DC voltage is converted to an AC voltage by the on / off control of the plurality of first semiconductor elements and the plurality of second semiconductor elements. The AC voltage is output from the third power terminal, according to any one of claims 9 to 19.

21. The semiconductor device according to any one of claims 1 to 20, wherein at least one of the plurality of connecting members is a metal plate.

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