Substrate processing apparatus, protective member, method for manufacturing a semiconductor device, and program

Abstract

This technology provides a method for adjusting the range over which the adhesion of reaction by-products and other substances to the inner surface of the processing vessel is suppressed. [Solution] The device comprises a processing container for processing substrates, a gas supply unit capable of supplying a gas for processing the substrates into the processing container, a protective member disposed along the inner circumferential surface of the processing container and whose height can be adjusted by rotating in the circumferential direction, and a control unit configured to control the supply of the gas and processing of the substrates after the height of the protective member has been adjusted.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a protective member, a method for manufacturing a semiconductor device, and a program.

Background Art

[0002] As one step in the manufacturing process of a semiconductor device, a process of modifying a film formed on a substrate with plasma may be performed (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technology capable of adjusting the range for suppressing the adhesion of reaction by-products and the like to the inner peripheral surface of a processing container.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, a processing container for processing a substrate, a gas supply unit capable of supplying a gas for processing the substrate into the processing container, a protective member arranged along the inner peripheral surface of the processing container and capable of adjusting its height by being rotated in the circumferential direction, and a control unit configured to be capable of controlling to supply the gas and process the substrate after the height of the protective member is adjusted. A technology including these is provided.

Effects of the Invention

[0006] According to the present disclosure, it becomes possible to adjust the range for suppressing the adhesion of reaction by-products and the like to the inner peripheral surface of a processing container. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic diagram showing a substrate processing apparatus according to an embodiment of the present disclosure. [Figure 2] Figure 2 shows how a protective member is replaced in a substrate processing apparatus according to an embodiment of the present disclosure. [Figure 3] Figure 3(A) is a top view of a protective member according to an embodiment of the present disclosure. Figure 3(B) is a side view of the protective member of Figure 3(A). [Figure 4] Figure 4(A) is a front view showing the protective member at its lowest height. Figure 4(B) is a partial cross-sectional view of Figure 4(A). Figure 4(C) is a front view showing the protective member at its highest height. Figure 4(D) is a partial cross-sectional view of Figure 4(C). [Figure 5] Figure 5 is a control block diagram showing the control system of the controller of a substrate processing apparatus according to an embodiment of the present disclosure. [Figure 6] Figure 6 is a flowchart showing the substrate processing process according to an embodiment of this disclosure. [Figure 7] Figure 7(A) is a top view of a modified example of the protective member according to an embodiment of the present disclosure. Figure 7(B) is a side view of the protective member of Figure 7(A). [Figure 8] Figure 8(A) is a top view of a modified example of the protective member according to an embodiment of the present disclosure. Figure 8(B) is a side view of the protective member of Figure 8(A). [Modes for carrying out the invention]

[0008] The following description will explain one aspect of this disclosure, primarily with reference to Figures 1 to 8. Note that the drawings used in the following description are all schematic. Furthermore, the dimensional relationships and ratios of the elements shown in the drawings do not necessarily correspond to those of reality. Moreover, the dimensional relationships and ratios of the elements do not necessarily correspond between multiple drawings.

[0009] (1) Configuration of substrate processing apparatus As shown in Figure 1, the substrate processing apparatus 100 includes a processing furnace 202 for plasma processing a wafer 200 as a substrate. The processing furnace 202 is provided with a processing container 203 that constitutes a processing chamber 201. That is, the substrate processing apparatus 100 is configured to perform plasma processing on the wafer 200 inside the processing container 203. The processing container 203 includes a dome-shaped upper container 210 and a bowl-shaped lower container 211. Furthermore, the substrate processing apparatus 100 includes a base plate 248 that covers the upper end of the lower container 211 and has through holes formed in it.

[0010] The upper container 210 is placed over the lower container 211 to form the processing chamber 201. The upper container 210 is made of quartz (SiO2), and the lower container 211 is made of, for example, aluminum (Al).

[0011] Furthermore, a silicon nitride (SiN) film is formed on the inner circumferential surface of the upper container 210 as a protective film for the upper container 210. The upper container 210 is an example of a quartz container.

[0012] Furthermore, as shown in Figure 1, a gate valve 244 is provided on the lower side wall of the lower container 211. When the gate valve 244 is open, it is configured to allow wafers 200 to be loaded into the processing chamber 201 via the loading / unloading port 245 using a transport mechanism (not shown), or to load wafers 200 to the outside of the processing chamber 201. When the gate valve 244 is closed, it is configured to act as a gate valve to maintain the airtightness of the processing chamber 201.

[0013] The processing chamber 201 has a plasma generation space surrounded by a resonance coil 212 and a substrate processing space that communicates with the plasma generation space and where the wafer 200 is processed. The plasma generation space is a space where plasma is generated, which is a space inside the processing chamber, above the lower end of the resonance coil 212 and below the upper end of the resonance coil 212. On the other hand, the substrate processing space is a space where the wafer 200 is processed using plasma, which is a space below the lower end of the resonance coil 212.

[0014] 〔Susceptor 217〕 The susceptor 217 as a substrate placement part for placing the wafer 200 is arranged at the center of the bottom side of the processing chamber 201 as shown in FIG. 1.

[0015] Inside the susceptor 217, a heater 217b as a heating mechanism is integrally embedded.

[0016] The susceptor 217 is electrically insulated from the lower container 211. Inside the susceptor 217, an impedance adjustment electrode 217c is equipped. The impedance adjustment electrode 217c is grounded via an impedance variable mechanism 275 as an impedance adjustment part.

[0017] Also, the susceptor 217 is provided with a susceptor lifting mechanism 268 having a drive mechanism for lifting and lowering the susceptor. Further, the susceptor 217 is provided with a through hole 217a, and a wafer push-up pin 266 is provided on the bottom surface of the lower container 211. When the susceptor 217 is lowered by the susceptor lifting mechanism 268, the wafer push-up pin 266 is configured to pass through the through hole 217a in a non-contact state with the susceptor 217.

[0018] Mainly, the susceptor 217 and the heater 217b constitute the substrate placement part according to this aspect.

[0019] 〔Gas supply unit 230〕 As shown in Figure 1, the gas supply unit 230 is located above the processing chamber 201. Specifically, a gas supply head 236 is provided above the processing chamber 201, that is, above the upper container 210. The gas supply head 236 comprises a cap-shaped lid 233, a gas inlet 234, a buffer chamber 237, an opening 238, a shielding plate 240, and a gas outlet 239, and is configured to supply each gas to the processing chamber 201.

[0020] A gas supply pipe 232 is connected to the gas inlet 234. The gas supply pipe 232 is connected so that the downstream end of the first gas supply pipe 232a, which supplies the first gas, the downstream end of the second gas supply pipe 232b, which supplies the second gas, and the inert gas supply pipe 232c, which supplies the inert gas, converge.

[0021] The first gas supply pipe 232a is equipped with, from upstream, a mass flow controller (MFC) 252a as a flow control device and a valve 253a as an on / off valve. The second gas supply pipe 232b is equipped with, from upstream, an MFC 252b and a valve 253b. The inert gas supply pipe 232c is equipped with, from upstream, an MFC 252c and a valve 253c. Although not included in the substrate processing apparatus 100, a first gas supply source 250a is provided upstream of the MFC 252a in the first gas supply pipe 232a, a second gas supply source 250b is provided upstream of the MFC 252b in the second gas supply pipe 232b, and an inert gas supply source 250c is provided upstream of the MFC 252c in the inert gas supply pipe 232c.

[0022] A valve 243a is provided in the gas supply pipe 232. The gas supply unit 230 is configured to supply gas for processing the wafer 200 into the processing container 203.

[0023] The gas supply unit 230 (gas supply system) according to this embodiment mainly consists of a gas supply head 236 (cover 233, gas inlet 234, buffer chamber 237, opening 238, shielding plate 240, gas outlet 239), a first gas supply pipe 232a, a second gas supply pipe 232b, an inert gas supply pipe 232c, MFCs 252a, 252b, 252c, and valves 253a, 253b, 253c, 243a. A first gas supply source 250a, a second gas supply source 250b, and an inert gas supply source 250c may also be included in the gas supply unit 230.

[0024] [Exhaust section 228] A gas exhaust port 235 for exhausting gas from the processing chamber 201 is provided on the side wall of the lower container 211. The upstream end of the gas exhaust pipe 231 is connected to the gas exhaust port 235. The gas exhaust pipe 231 is equipped with, in order from the upstream side, an APC (Auto Pressure Controller) valve 242 as a pressure regulator (pressure adjustment unit), a valve 243b as an on / off valve, and a vacuum pump 246 as a vacuum evacuation device.

[0025] The exhaust section 228 (exhaust system) according to this embodiment mainly consists of a gas exhaust port 235, a gas exhaust pipe 231, an APC valve 242, and a valve 243b. A vacuum pump 246 may also be included in the exhaust section 228.

[0026] [Plasma generation unit 216] As shown in Figure 1, the plasma generation unit 216 is mainly located on the outside of the outer wall of the upper container 210. Specifically, a helical resonant coil 212 is provided on the outer periphery of the processing chamber 201, that is, on the outside of the side wall of the upper container 210, so as to surround the processing chamber 201. In other words, the helical resonant coil 212 is provided so as to surround the processing container 203 from the radially outer side of the upper container 210 (the side away from the center of the upper container 210). The resonant coil 212 is an electrode and is an example of a coil.

[0027] Furthermore, the resonant coil 212 is connected to an RF (Radio Frequency) sensor 272, a high-frequency power supply 273, and a matching unit 274 that matches the impedance and output frequency of the high-frequency power supply 273.

[0028] The high-frequency power supply 273 supplies high-frequency power (RF power) to the resonant coil 212. The RF sensor 272 is located on the output side of the high-frequency power supply 273 and monitors information on the forward and reflected waves of the supplied high-frequency power. The reflected wave power monitored by the RF sensor 272 is input to the matching unit 274, and the matching unit 274 controls the impedance of the high-frequency power supply 273 and the frequency of the output high-frequency power to minimize the reflected wave based on the reflected wave information input from the RF sensor 272.

[0029] The high-frequency power supply 273 includes a power supply control means (control circuit) that includes a high-frequency oscillation circuit and a preamplifier for defining the oscillation frequency and output, and an amplifier (output circuit) for amplifying to a predetermined output. The power supply control means controls the amplifier based on preset frequency and power output conditions via an operation panel. The amplifier supplies a constant high-frequency power to the resonant coil 212 via a transmission line.

[0030] The resonant coil 212 is configured with a winding diameter, winding pitch, and number of turns to resonate at a specific wavelength in order to form a standing wave of a predetermined wavelength. In other words, the electrical length of the resonant coil 212 is configured to be an integer multiple (1, 2, ...) of one wavelength at a predetermined frequency of the high-frequency power supplied from the high-frequency power supply 273. In other words, the substrate processing apparatus 100 is equipped with a high-frequency power supply 273 that supplies high-frequency power to the electrodes having a wavelength that is an integer multiple of the electrical length of the resonant coil 212.

[0031] The materials used to construct the resonant coil 212 include copper pipes, copper sheets, aluminum pipes, aluminum sheets, and polymer belts coated with copper or aluminum.

[0032] Both ends of the resonant coil 212 are electrically grounded, and at least one end is grounded via a movable tap 213 to fine-tune the electrical length of the resonant coil during the initial setup of the device or when processing conditions are changed. Reference numeral 214 in Figure 1 indicates the other fixed ground. Furthermore, to fine-tune the impedance of the resonant coil 212 during the initial setup of the device or when processing conditions are changed, a power supply section is formed between the grounded ends of the resonant coil 212 by a movable tap 215.

[0033] The plasma generation unit 216 according to this embodiment is mainly composed of a resonant coil 212, an RF sensor 272, and a matching unit 274. A high-frequency power supply 273 may also be included as part of the plasma generation unit.

[0034] [Shielding plate 224] As shown in Figure 1, the shielding plate 224 covers the resonant coil 212 from the radial outside of the processing container 203, shielding the electric field generated by the resonant coil 212, and is provided to form a capacitive component (C component) between itself and the resonant coil 212, which is one of the components of a resonant circuit.

[0035] Specifically, the shielding plate 224 is formed using a conductive material such as an aluminum alloy. The lower end of the shielding plate 224 has a lower flange 227 that extends inward in the radial direction of the container, and is configured to be installed on the base plate 248.

[0036] [Protective member 280] As shown in Figure 1, the protective member 280 is mounted on the base plate 248 of the lower container 211 so as to cover the inner surface of the upper container 210 from the inside, along the inner surface of the lower end portion of the upper container 210 within the processing container 203.

[0037] When a process is performed in which gas is supplied into the processing container 203 to form a film on the wafer 200, gas components and reaction by-products may adhere to the inner wall of the processing container 203. In particular, if gas components and reaction by-products adhere to the lower end of the processing container 203, stress is applied to the processing container 203 due to heat, vacuum pressure, etc., which may cause damage (e.g., cracks) to the inner wall of the processing container 203. To suppress the adhesion of gas components and reaction by-products inside the processing container 203, protective members 280 are installed in areas inside the processing container 203 where gas components and reaction by-products are likely to adhere before supplying gas into the processing container 203. This suppresses damage to the processing container 203 (e.g., the occurrence of cracks), thereby extending the lifespan of the processing container 203.

[0038] Furthermore, as shown in Figure 2, the upper container 210 is movable upward. During maintenance work such as replacing the protective member 280, the upper container 210 is moved upward relative to the lower container 211, and the protective member 280, to which gas components and reaction by-products have adhered, is moved horizontally from the maintenance space (maintenance area) created between the lower end of the upper container 210 and the upper end of the lower container 211 to remove it from inside the processing container 203. Then, the cleaned protective member 280 or a new protective member 280 is moved horizontally and installed inside the processing container 203 for replacement. At this time, there is a limit to how high the upper container 210 can be lifted upward, and the maintenance area is limited.

[0039] In this disclosure, the protective member 280 is adjusted so that, during maintenance work, its height is lowered so that it can be removed from or installed on the base plate 248. At this time, the height of the protective member 280 is lower than the height of the maintenance area. The protective member 280 is then removed horizontally from the base plate 248 of the lower container 211 while at a lower height. The protective member 280 is also installed horizontally on the base plate 248 while at a lower height.

[0040] Figure 3(A) is a top view of the protective member 280, and Figure 3(B) is a side view of Figure 3(A). Figure 4(A) is a front view showing the protective member 280 in its lowest height state, and Figure 4(B) is a partial cross-sectional view of Figure 4(A). Figure 4(C) is a front view showing the protective member 280 in its highest height state, and Figure 4(D) is a partial cross-sectional view of Figure 4(C).

[0041] The protective member 280 is cylindrical in shape and is configured to be divided into two parts in the vertical direction. Specifically, the protective member 280 consists of a first protective member 281 which is located on the outer circumference and forms the upper part, and a second protective member 282 which is located on the inner circumference of the first protective member 281 and forms the lower part of the first protective member 281. The first protective member 281 and the second protective member 282 are arranged in a substantially concentric manner.

[0042] The distance from the center of the first protective member 281 to the inner surface of the first protective member 281 is configured to be longer than the distance from the center of the second protective member 282 to the outer surface of the second protective member 282. In other words, the inner diameter of the first protective member 281 is configured to be larger than the outer diameter of the second protective member 282. The second protective member 282 is configured to be housed inside the first protective member 281. Furthermore, the distance from the center of the first protective member 281 to the outer surface is configured to be shorter than the distance from the center of the processing container 203 to the inner surface. In other words, the outer diameter of the first protective member 281 is configured to be smaller than the inner diameter of the processing container 203. Also, the outer surface of the first protective member 281 is configured to be closer to the inner surface of the processing container 203 than the outer surface of the second protective member 282. Therefore, it is possible to suppress the adhesion of a film to the inner surface of the processing container 203 in the range from the upper end position of the first protective member 281 to the lower end position of the second protective member 282.

[0043] The inner circumferential surface of the first protective member 281 has a first protrusion 283 that projects outward in a circumferential direction, inclined diagonally from the lower end to the upper end. The outer circumferential surface of the second protective member 282 has a second protrusion 284 that projects outward in a circumferential direction, inclined diagonally from the lower end to the upper end. The distance from the center of the first protective member 281 to the inner circumferential surface of the first protrusion 283 is configured to be longer than the distance from the center of the second protective member 282 to the outer circumferential surface of the second protective member 282.

[0044] Furthermore, the lower end surface of the first protrusion 283 is configured to contact the upper end surface of the second protrusion 284. That is, by rotating the first protective member 281, for example counterclockwise, the lower end surface of the first protrusion 283 slides circumferentially on the upper end surface of the second protrusion 284. This causes the first protective member 281 to move upward relative to the second protective member 282, adjusting the height of the protective member 280 to be higher. Also, by rotating the first protective member 281, for example clockwise, the lower end surface of the first protrusion 283 slides circumferentially on the upper end surface of the second protrusion 284. This causes the first protective member 281 to move downward relative to the second protective member 282, adjusting the height of the protective member 280 to be lower. In other words, the protective member 280 is configured such that the height of the protective member 280 can be adjusted by rotating the first protective member 281 circumferentially relative to the second protective member 282, thereby moving the first protective member 281 vertically. That is, the height of the protective member 280 can be easily adjusted. In this way, the height of the protective member 280 can be adjusted by moving the first protective member 281 vertically relative to the second protective member 282. Furthermore, the inclination of the first protrusion 283 and the second protrusion 284 may be adjusted such that rotating the first protective member 281 clockwise causes the first protective member 281 to move upward relative to the second protective member 282, thereby increasing the height of the protective member 280, and rotating the first protective member 281 counterclockwise causes the first protective member 281 to move downward relative to the second protective member 282, thereby decreasing the height of the protective member 280.

[0045] In other words, after the maintenance work is completed, the protective member 280 is placed on the base plate 248 in a low position, and while it is placed on the base plate 248, the height of the protective member 280 is adjusted by rotating the first protective member 281 circumferentially relative to the second protective member 282. That is, before processing the wafer 200 after maintenance, the height of the protective member 280 can be increased by rotating it circumferentially to widen the protective area that prevents gas components and reaction by-products from adhering to the processing container 203, thereby reducing the area in the processing container 203 where gas components and reaction by-products may adhere. In other words, the protective member 280 is configured to allow height adjustment, and its height can be adjusted according to the purpose. Note that the operation to increase the height of the protective member 280 can be performed not only after the maintenance work is completed, but also during the maintenance work, as long as it is done while the upper container 210 is lifted upwards.

[0046] As shown in Figure 1, the protective member 280 is mounted on the base plate 248 of the lower container 211 so as to follow the inner circumferential surface of the lower end portion of the upper container 210 of the processing container 203. This facilitates the installation of the protective member 280. The protective member 280 and the processing container 203 are arranged in approximately concentric circles. This suppresses the adhesion of gas components and reaction by-products to the inner circumferential surface of the processing container 203 on an average (uniform) basis. The gap between the inner circumferential surface of the processing container 203 and the outer circumferential surface of the protective member 280 is narrower than 2 mm, preferably 1 mm or less. This suppresses the adhesion of gas components and reaction by-products to the gap between the processing container 203 and the protective member 280. Furthermore, by providing the above-mentioned gap between the inner surface of the processing container 203 and the outer surface of the protective member 280, it is possible to prevent the inner surface of the processing container 203 and the outer surface of the protective member 280 from sticking together due to the adhesion of gas components and reaction by-products. This reduces unnecessary work time during maintenance due to the sticking of the inner surface of the processing container 203 and the outer surface of the protective member 280, and avoids the generation of particles and other noise when peeling the protective member 280 from the processing container 203.

[0047] Furthermore, the protective member 280 is configured to prevent the components of the supplied gas and reaction by-products from adhering to the processing container 203. Specifically, the protective member 280 (i.e., the first protective member 281 and the second protective member 282) is made of, for example, SiO2. This allows the gas components and reaction by-products to adhere to the protective member 280, thereby preventing at least the components of the supplied gas and reaction by-products from adhering to the processing container 203. As a result, the frequency of maintenance such as cleaning and replacement of the processing container 203 can be reduced. In addition, maintenance can be completed by simply replacing the protective member 280, thus reducing the downtime of the equipment.

[0048] [Controller 221] As shown in Figure 1, the controller 221, acting as the control unit, is configured to control the APC valve 242, valve 243b, and vacuum pump 246 via signal line A, the susceptor lifting mechanism 268 via signal line B, and the heater power adjustment mechanism 276 and impedance variable mechanism 275 via signal line C. Furthermore, the controller 221 is configured to control the gate valve 244 via signal line D, the RF sensor 272, high-frequency power supply 273, and matching unit 274 via signal line E, and the MFCs 252a to 252c and valves 253a to 253c, 243a via signal line F.

[0049] As shown in Figure 5, the controller 221 is configured as a computer equipped with a CPU (Central Processing Unit) 221a, RAM (Random Access Memory) 221b, storage device 221c, and I / O port 221d. The RAM 221b, storage device 221c, and I / O port 221d are configured to exchange data with the CPU 221a via an internal bus 221e. An input / output device 222, configured as, for example, a touch panel or display, is connected to the controller 221.

[0050] Here, the input device 222 is configured to receive input such as processing conditions for processing the wafer 200 and execution operations for substrate processing. The input / output device 222 is also configured to display the status of the substrate processing device 100.

[0051] The storage device 221c is composed of, for example, flash memory, an HDD (Hard Disk Drive), etc. The storage device 221c contains, in a readable format, control programs that control the operation of the board processing device, process recipes that describe the procedures and conditions for board processing (described later), and recipe execution programs for executing the process recipes.

[0052] The recipe execution program is a combination of components that cause the CPU 221a to execute each step in the substrate processing process described later, thereby obtaining a predetermined result, and functions as a program. Hereinafter, this recipe execution program and control program will be collectively referred to simply as a program (program product). In this specification, the term "program" may include only the recipe execution program, only the control program, or both. The RAM 221b is configured as a memory area (work area) where programs and data read by the CPU 221a are temporarily held.

[0053] In this embodiment, the memory device 221c stores each processing condition. The processing condition includes at least one of the following: the temperature of the wafer 200 to be processed, the pressure of the processing chamber 201, the type of gas used to process the wafer 200, the flow rate of the gas used to process the wafer 200, and the power supplied to the resonant coil 212.

[0054] I / O port 221d is connected to the MFCs 252a to 252c, valves 253a to 253c, 243a, 243b, gate valve 244, APC valve 242, vacuum pump 246, RF sensor 272, high-frequency power supply 273, matching unit 274, susceptor lifting mechanism 268, heater power adjustment mechanism 276, impedance variable mechanism 275, etc.

[0055] The CPU 221a is configured to read and execute control programs from the storage device 221c, and to read process recipes from the storage device 221c in response to input of operation commands from the input / output device 222.

[0056] The CPU 221a is configured to control the opening adjustment operation of the APC valve 242, the opening and closing operation of valve 243b, and the starting and stopping of the vacuum pump 246 via I / O port 221d and signal line A, in accordance with the contents of the read process recipe. Furthermore, the CPU 221a is configured to control the raising and lowering operation of the susceptor lifting mechanism 268 via signal line B, the power supply adjustment operation (temperature adjustment operation) of the heater power adjustment mechanism 276 and impedance variable mechanism 275 to the heater 217b via signal line C, and the opening and closing operation of the gate valve 244 via signal line D. In addition, the CPU 221a is configured to control the operation of the RF sensor 272, the matching unit 274 and the high-frequency power supply 273 via signal line E, and the flow rate adjustment operation of various gases by MFCs 252a to 252c, and the opening and closing operation of valves 253a to 253c and 243a, etc. via signal line F.

[0057] The controller 221 can be configured by installing the above-mentioned program stored in an external storage device (for example, magnetic tape, magnetic disks such as flexible disks and hard disks, optical disks such as CDs and DVDs, magneto-optical disks such as MOs, semiconductor memory such as USB memory and memory cards) 223 into a computer. The storage device 221c and the external storage device 223 are configured as recording media that can be read by a computer. Hereinafter, these will be collectively referred to simply as recording media. In this specification, when the term recording media is used, it may include only the storage device 221c, only the external storage device 223, or both. The program may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 223, or the program provided by communication means such as the Internet or a dedicated line may be stored in the recording media and used.

[0058] (2) Substrate processing process Using the substrate processing apparatus 100 described above, an example sequence for forming a film containing a predetermined element on a wafer 200 as one step in the substrate processing process of the semiconductor device manufacturing process will be explained with reference to Figure 6. In the following explanation, the operation of each part constituting the substrate processing apparatus 100 is controlled by the controller 221.

[0059] [Installation of protective member 280] First, before starting the substrate processing process, a protective member 280 is installed inside the processing container 203. At this time, the pressure inside the processing chamber 201 is adjusted to atmospheric pressure. Specifically, the upper container 210 is moved upward, and the protective member 280 is moved horizontally from the maintenance area and attached to the base plate 248 so that it is along the inner circumferential surface of the lower end of the upper container 210. At this time, the protective member 280 and the processing container 203 are arranged in approximately concentric circles. Also, at this time, the gap between the inner circumferential surface of the processing container 203 and the outer circumferential surface of the protective member 280 is made narrower than 2 mm. Then, the height of the protective member 280 is adjusted by rotating it in the circumferential direction. After the height of the protective member 280 is adjusted, the upper container 210 is moved downward. After that, the opening degree of the APC valve 242 is adjusted so that the pressure inside the processing chamber 201 is adjusted to the same pressure as the vacuum transfer chamber adjacent to the processing chamber 201, and the next steps S110 to S160 are performed.

[0060] [Substrate loading process S110] In the substrate loading process S100, the wafer 200 is loaded into the processing room 201. Specifically, the susceptor lifting mechanism 268 lowers the susceptor 217 to the wafer transport position, and the wafer push-up pin 266 passes through the through-hole 217a of the susceptor 217.

[0061] Next, the gate valve 244 is opened, and the wafer 200 is transported into the processing chamber 201 from the vacuum transport chamber adjacent to the processing chamber 201 using a wafer transport mechanism (not shown). The transported wafer 200 is supported in a horizontal position on the wafer push-up pins 266 that protrude from the surface of the susceptor 217. Once the wafer 200 has been transported into the processing chamber 201, the wafer transport mechanism retracts to the outside of the processing chamber 201, and the gate valve 244 is closed to seal the processing chamber 201. Then, the susceptor lifting mechanism 268 raises the susceptor 217, and the wafer 200 is supported on the upper surface of the susceptor 217.

[0062] [Heating and vacuum evacuation process S120] In the heating and vacuum evacuation process S120, the wafer 200 that has been brought into the processing chamber 201 is heated. The heater 217b is preheated, and the wafer 200 is heated by holding it on the susceptor 217 into which the heater 217b is embedded. Here, the wafer 200 is heated until it reaches the target temperature. While the wafer 200 is being heated, the vacuum pump 246 evacuates the processing chamber 201 via the gas exhaust pipe 231, and sets the pressure in the processing chamber 201 to a predetermined value. The vacuum pump 246 is kept running at least until the substrate removal process S160, described later, is completed.

[0063] [Reaction gas supply process S130] In reaction gas supply process S130, the supply of the first gas and the second gas as reaction gases is started. Specifically, valves 253a and 253b are opened, and the supply of the first gas and the second gas to the processing chamber 201 is started while controlling the flow rate with MFCs 252a and 252b.

[0064] Furthermore, the exhaust of the processing chamber 201 is controlled by adjusting the opening of the APC valve 242 so that the processing chamber 201 reaches the target pressure. In this way, the supply of the first gas and the second gas is continued until the end of the plasma processing step S140, which will be described later, while the processing chamber 201 is appropriately exhausted.

[0065] As the first gas, for example, an oxygen-containing gas can be used. As an oxygen-containing gas, for example, oxygen (O2) gas can be used.

[0066] As the second gas, for example, a hydrogen-containing gas can be used. As a hydrogen-containing gas, for example, hydrogen (H2) gas can be used.

[0067] [Plasma treatment process S140] After the pressure in the processing chamber 201 stabilizes, in the plasma processing step S140, high-frequency power is supplied to the resonant coil 212 from the high-frequency power supply 273 via the RF sensor 272.

[0068] As a result, a high-frequency electric field is formed in the plasma generation space to which the first and second gases are supplied. This electric field excites a donut-shaped induced plasma with the highest plasma density at a height corresponding to the electrical midpoint of the resonant coil 212 in the plasma generation space. The plasma-like first and second gases are plasma-excited and dissociated, generating reactive species such as radicals (active species) and ions of the elements contained in the first and second gases. Specifically, for example, reactive species such as oxygen radicals (oxygen active species) and oxygen ions containing oxygen, and hydrogen radicals (hydrogen active species) and hydrogen ions containing hydrogen are generated.

[0069] Then, radicals and ions generated by the inductive plasma are supplied to trenches on the surface of the wafer 200, which is held on the susceptor 217 in the substrate processing space. The supplied radicals and ions react with the sidewalls of the trenches, and the surface layer is modified. Specifically, for example, the silicon layer on the surface is modified into a silicon oxide layer.

[0070] After a predetermined processing time has elapsed, the power supply from the high-frequency power supply 273 is stopped, and the plasma discharge in the processing chamber 201 is stopped. Valves 253a and 253b are also closed, stopping the supply of the first and second gases to the processing chamber 201. With this, the plasma processing step S140 is completed. In this specification, processing time refers to the time during which the processing continues. This also applies to the following description.

[0071] [Vacuum evacuation process S150] After the supply of the first and second gases is stopped, in the vacuum evacuation process S150, the processing chamber 201 is evacuated via the gas exhaust pipe 231. This exhausts the first and second gases, as well as the exhaust gases generated by the reaction of these gases, to the outside of the processing chamber 201. Subsequently, the opening of the APC valve 242 is adjusted so that the pressure in the processing chamber 201 is the same as the pressure in the vacuum transfer chamber adjacent to the processing chamber 201 (the destination for the wafer 200; not shown).

[0072] [Substrate unloading process S160] After the processing chamber 201 reaches a predetermined pressure, in the substrate unloading process S160, the susceptor 217 descends to the wafer 200's transport position, and the wafer 200 is supported on the wafer push-up pins 266. Then, the gate valve 244 opens, and the wafer 200 is unloaded from the processing chamber 201 using the wafer transport mechanism. This completes the substrate processing process according to this embodiment.

[0073] [Maintenance Process] After the substrate processing process has been performed multiple times, the substrate processing apparatus 100 is maintained. At this time, the opening of the APC valve 242 is adjusted so that the pressure inside the processing chamber 201 is equal to atmospheric pressure. Specifically, the upper container 210 is moved upward so that the protective member 280, to which gas components and reaction by-products have adhered, is at a height that allows it to be removed from the base plate 248. The first protective member 281 is rotated circumferentially relative to the second protective member 282 to lower the height of the protective member 280. Then, the protective member 280 is moved horizontally and removed from inside the processing container 203 for maintenance.

[0074] (3) Summary According to this disclosure, one or more of the following effects can be obtained:

[0075] As described above, the substrate processing apparatus 100 is provided with a protective member 280 whose height can be adjusted along the inner circumferential surface of the processing container 203. This allows adjustment of the range over which the adhesion of gas components supplied into the processing container 203 and reaction by-products to the inner circumferential surface of the processing container 203 is suppressed.

[0076] Furthermore, since the protective member 280 can be installed in areas of the processing container 203 where gas components and reaction by-products are likely to adhere, the adhesion of gas components and reaction by-products to the processing container 203 can be suppressed. As a result, the occurrence of cracks in the processing container 203 is suppressed, and the lifespan of the processing container 203 can be extended.

[0077] Furthermore, by moving the upper container 210 upward, the protective member 280 inside the processing container 203 can be replaced, making it easy to replace the protective member 280.

[0078] Furthermore, because the first protective member 281 is rotated in the circumferential direction, it moves vertically, allowing for adjustment of the height of the protective member 280. Therefore, even when the maintenance area is limited, the height of the protective member 280 can be easily adjusted.

[0079] (4) Other aspects of the Disclosure Next, other embodiments of the protective member 280 described above will be explained.

[0080] (Variation 1) Figure 7 shows a modified example 1 of the protective member described above. The protective member 290 in this modified example consists of a first protective member 291 which is located on the outer circumference and forms the upper part, and a second protective member 292 which is located on the inner circumference of the first protective member 291 and forms the lower part of the first protective member 291. The first protective member 291 and the second protective member 292 are arranged in a substantially concentric manner.

[0081] The distance from the center of the first protective member 291 to the inner surface of the first protective member 291 is configured to be longer than the distance from the center of the second protective member 292 to the outer surface of the second protective member 292. In other words, the second protective member 292 is housed inside the first protective member 291.

[0082] The inner circumferential surface of the first protective member 291 has a convex portion 293 that slopes diagonally in the circumferential direction from the lower end to the upper end and protrudes toward the center. The outer circumferential surface of the second protective member 292 has a recess 294 that slopes diagonally in the circumferential direction from the lower end to the upper end and recesses toward the center. The distance from the center of the first protective member 291 to the inner circumferential surface of the convex portion 293 is configured to be longer than the distance from the center of the second protective member 292 to the outer circumferential surface of the recess 294, that is, the distance from the outer circumferential surface of the second protective member 292 to the bottom (also called the bottom surface) that constitutes the recess 294.

[0083] The protrusion 293 is configured to fit into the recess 294 and slide circumferentially within the recess 294. In other words, by rotating the first protective member 291, for example counterclockwise, the protrusion 293 of the protective member 290 slides circumferentially with the protrusion 293 fitted into the recess 294. This causes the first protective member 291 to move upward relative to the second protective member 292, adjusting the height of the protective member 290 to be higher. Similarly, by rotating the first protective member 291, for example clockwise, the protrusion 293 of the protective member 290 slides circumferentially with the protrusion 293 fitted into the recess 294. This causes the first protective member 291 to move downward relative to the second protective member 292, adjusting the height of the protective member 290 to be lower. In other words, the protective member 290 is configured such that the height of the protective member 290 can be adjusted by rotating the first protective member 291 in the circumferential direction relative to the second protective member 292, which in turn causes the first protective member 291 to move vertically. The same effects as those of the above-described embodiment can be obtained in this modified example as well. Furthermore, the inclination of the convex portion 293 and the concave portion 294 may be adjusted such that rotating the first protective member 291 clockwise causes the first protective member 291 to move upward relative to the second protective member 292, thereby increasing the height of the protective member 290, and rotating the first protective member 291 counterclockwise causes the first protective member 291 to move downward relative to the second protective member 292, thereby decreasing the height of the protective member 290.

[0084] (Modification 2) Figure 8 shows a modified example 2 of the protective member described above. The protective member 300 in this modified example consists of a first protective member 301 which is located on the outer circumference and forms the upper part, and a second protective member 302 which is located on the inner circumference of the first protective member 301 and forms the lower part of the first protective member 301. The first protective member 301 and the second protective member 302 are arranged in a substantially concentric manner.

[0085] The distance from the center of the first protective member 301 to the inner surface of the first protective member 301 is configured to be longer than the distance from the center of the second protective member 302 to the outer surface of the second protective member 302. In other words, the second protective member 302 is housed inside the first protective member 301.

[0086] The inner circumferential surface of the first protective member 301 has a recess 303 that slopes diagonally in the circumferential direction from the lower end to the upper end. The outer circumferential surface of the second protective member 302 has a protrusion 304 that slopes diagonally in the circumferential direction from the lower end to the upper end. The distance from the center of the first protective member 301 to the inner circumferential surface of the recess 303, that is, the distance from the inner circumferential surface of the first protective member 301 to the bottom (also called the bottom surface) of the recess 303, is configured to be longer than the distance from the center of the second protective member 302 to the outer circumferential surface of the protrusion 304.

[0087] The protrusion 304 is configured to fit into the recess 303 and slide circumferentially. In other words, by rotating the first protective member 301, for example counterclockwise, the protrusion 304 slides circumferentially with the protrusion 304 fitted into the recess 303. This causes the first protective member 301 to move upward relative to the second protective member 302, adjusting the height of the protective member 300 to be higher. Similarly, by rotating the first protective member 301, for example clockwise, the protrusion 304 slides circumferentially with the protrusion 304 fitted into the recess 303. This causes the first protective member 301 to move downward relative to the second protective member 302, adjusting the height of the protective member 300 to be lower. That is, the protective member 300 is configured such that the height of the protective member 300 can be adjusted by rotating the first protective member 301 circumferentially relative to the second protective member 302, which causes the first protective member 301 to move vertically. In this modified example, the same effects as those described above can be obtained. Furthermore, the inclination of the convex portion 304 and the concave portion 303 may be adjusted such that rotating the first protective member 301 clockwise causes the first protective member 301 to move upward relative to the second protective member 302, thereby increasing the height of the protective member 300, and rotating the first protective member 301 counterclockwise causes the first protective member 301 to move downward relative to the second protective member 302, thereby decreasing the height of the protective member 300.

[0088] While the above embodiments have described specific embodiments in detail, this disclosure is not limited to these embodiments, and it will be apparent to those skilled in the art that various other embodiments are possible within the scope of this disclosure.

[0089] Furthermore, although the above embodiment describes an example in which the protective member 280 is formed using, for example, SiO2, it is not limited to this, and the protective member 280 may be formed using other materials.

[0090] Furthermore, although the above embodiment was described using an example in which the protective member 280 is divided into two parts, such as a first protective member 281 and a second protective member 282, it is not limited to this, and may be configured in three or more parts to adjust the height.

[0091] Furthermore, although not specifically explained in the above embodiments, unless otherwise specified in the specification, each element is not limited to one, but may be present in multiple forms.

[0092] Furthermore, the above embodiments described an example of forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at a time. This disclosure is not limited to the above embodiments and can be suitably applied, for example, when forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time. Furthermore, the above embodiments described an example of forming a film using a substrate processing apparatus having a cold-wall type processing furnace. This disclosure is not limited to the above embodiments and can be suitably applied when forming a film using a substrate processing apparatus having a hot-wall type processing furnace.

[0093] Even when using these substrate processing devices, each process can be carried out using the same processing procedures and conditions as described above, and the same effects as described above can be obtained.

[0094] The above-described embodiments and modifications can be used in combination as appropriate. The processing procedure and processing conditions in this case can be the same as, for example, the processing procedure and processing conditions of the above-described embodiments and modifications. [Explanation of Symbols]

[0095] 100 Substrate Processing Equipment 200 wafers (an example of a substrate) 203 Processing container 221 Control Unit 230 Gas Supply Department 280, 290, 300 Protective components

Claims

1. A processing container for processing substrates, A gas supply unit capable of supplying a gas for processing the substrate into the processing container, A protective member is disposed along the inner circumferential surface of the processing container and is adjustable in height by rotating in the circumferential direction. A control unit is configured to control the supply of the gas and processing of the substrate after the height of the protective member has been adjusted, A substrate processing apparatus equipped with the following:

2. The substrate processing apparatus according to claim 1, wherein the protective member is divided vertically and consists of a first protective member which is an upper section and a second protective member which is a lower section.

3. The substrate processing apparatus according to claim 2, wherein the distance from the center of the first protective member to the inner surface of the first protective member is longer than the distance from the center of the second protective member to the outer surface of the second protective member.

4. The substrate processing apparatus according to claim 3, wherein the inner circumferential surface of the first protective member and the outer circumferential surface of the second protective member are each provided with a convex portion inclined in the circumferential direction.

5. The first protective member has a first protrusion that is inclined from the lower end to the upper end of the inner circumferential surface, The second protective member has a second protrusion that is inclined from the lower end to the upper end of the outer circumferential surface, The substrate processing apparatus according to claim 3.

6. The substrate processing apparatus according to claim 5, wherein the lower end surface of the first protrusion is in contact with the upper end surface of the second protrusion.

7. The substrate processing apparatus according to claim 5, wherein the distance from the center of the first protective member to the inner surface of the first protrusion is longer than the distance from the center of the second protective member to the outer surface of the second protective member.

8. The substrate processing apparatus according to claim 2, wherein the first protective member and the second protective member are arranged in substantially concentric circles.

9. The substrate processing apparatus according to claim 6, wherein the protective member is configured such that the height of the protective member is adjusted in the vertical direction by the rotation of the first protective member in the circumferential direction.

10. The substrate processing apparatus according to claim 9, wherein the protective member is configured such that the height of the protective member is adjusted by the lower end surface of the first protrusion sliding circumferentially on the upper end surface of the second protrusion.

11. The substrate processing apparatus according to claim 1, wherein the protective member is configured to be removable from inside the processing container.

12. The processing container consists of an upper container and a lower container, and the upper container is movable upward. The substrate processing apparatus according to claim 1, wherein the height of the protective member when it is lowered is configured to be lower than the height of the space created between the lower end of the upper container and the upper end of the lower container when the upper container is moved upward.

13. The substrate processing apparatus according to claim 12, wherein the protective member is disposed in the lower container.

14. The substrate processing apparatus according to claim 1, wherein the gap between the inner circumferential surface of the processing container and the outer circumferential surface of the protective member is configured to be a gap that can suppress the adhesion of the gas between the processing container and the protective member.

15. The substrate processing apparatus according to claim 1, wherein the protective member is configured to at least prevent the supplied gas from adhering to the processing container.

16. The substrate processing apparatus according to claim 1, wherein the protective member and the processing container are arranged in substantially concentric circles.

17. The substrate processing apparatus according to claim 1, wherein the protective member is adjusted to be higher in height before processing the substrate, and adjusted to be lower in height during maintenance work.

18. A protective member positioned along the inner circumferential surface of a processing container for handling substrates, and whose height can be adjusted by rotating it in the circumferential direction.

19. The process involves adjusting the height of a protective member by positioning it along the inner circumferential surface of a processing container for processing substrates and rotating it in the circumferential direction, A step of supplying gas into the processing container to process the substrate, A method for manufacturing a semiconductor device having [a certain feature].

20. A program that instructs a substrate processing device, via computer, to execute a procedure for processing a substrate by supplying gas into a processing container in which a protective member, whose height is adjusted by circumferential rotation, is arranged along the inner surface, thereby processing the substrate.

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