Substrate processing apparatus and substrate processing method

Abstract

This technology provides an increased amount of heat when heating a substrate. [Solution] The substrate processing apparatus includes a processing container, a substrate support portion provided inside the processing container for supporting a substrate, and a heating portion for heating the substrate supported by the substrate support portion. The heating portion includes a heater wire that transmits radiant heat to the surroundings during heating, and a lens member provided adjacent to the heater wire. The lens member is positioned between the substrate support portion and the heater wire to direct the radiant heat in the direction in which the substrate is located, and / or between the processing container and the heater wire to direct the radiant heat in a direction perpendicular to the surface of the processing container.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus (heat treatment apparatus) that includes a rotary table for supporting a plurality of substrates inside a vacuum chamber, and forms a film on the surface of each substrate by supplying a processing gas while rotating (revolving) the rotary table. This substrate processing apparatus includes a heating unit (heater) for heating each substrate on the back side of the rotary table. The heating unit is configured by arranging a plurality of heater elements made of carbon wire heaters or the like in a concentric circle.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of increasing the amount of heat when heating a substrate.

Means for Solving the Problems

[0005] According to one aspect of the present disclosure, there is provided a substrate processing apparatus including a processing chamber, a substrate support portion provided inside the processing chamber for supporting a substrate, and a heating portion for heating the substrate supported by the substrate support portion, wherein the heating portion includes a heater wire that transfers radiant heat to the surroundings during heating, and a lens member provided at an adjacent position to the heater wire, and the lens member is disposed between the substrate support portion and the heater wire to direct the radiant heat in the direction in which the substrate is located, and / or is disposed between the processing chamber and the heater wire to direct the radiant heat in a direction perpendicular to the surface of the processing chamber. [Effects of the Invention]

[0006] According to one embodiment, the amount of heat generated when heating the substrate can be increased. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic cross-sectional view showing a substrate processing apparatus according to an embodiment. [Figure 2] This is a schematic plan view showing the inside of the processing container of a substrate processing apparatus. [Figure 3] This is a partial cross-sectional view of the processing container, arranged concentrically along the rotating table from the raw material gas nozzle to the first separation gas nozzle and the reaction gas nozzle. [Figure 4] This is a cross-sectional perspective view showing the rotary table and heating section. [Figure 5] This is a cross-sectional view showing a magnified view of the configuration near the outer edge of the rotary table. [Figure 6] This is a cross-sectional view showing a magnified view of the lens component. [Figure 7] This is a flowchart showing the processing flow of the substrate processing method. [Figure 8] This is a schematic cross-sectional view showing the heating section according to the first modified example. [Figure 9] This figure shows an enlarged view of the heater wire and lens member according to the second modified example. [Figure 10] This is a diagram showing an enlarged view of the heater wire and lens member according to the third modified example. [Modes for carrying out the invention]

[0008] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0009] <Configuration of the substrate processing device 100> As shown in Figures 1 and 2, the substrate processing apparatus 100 according to the embodiment performs substrate processing to deposit a film on the surface of a substrate W by atomic layer deposition (ALD) or molecular layer deposition (MLD). The substrate processing apparatus 100 includes a processing container 1 that houses the substrate W, and a rotary table 2 which is a substrate support that rotatably supports the substrate W inside the processing container 1.

[0010] The processing container 1 is formed in a flat cylindrical shape with a processing chamber inside. For example, the processing container 1 is constructed by assembling a container body 12 with an open top and a top plate 11 that closes the opening of the container body 12. Note that in Figure 2, the top plate 11 is omitted from the illustration for the sake of explanation.

[0011] The container body 12 comprises a disc-shaped bottom 14 and side portions 13 that protrude vertically upward from the outer edge of the bottom 14. The upper end of the side portion 13 of the container body 12 and the top plate 11 are airtightly fixed together via a sealing member 15, such as an O-ring.

[0012] The rotary table 2 is formed in an annular shape, and its inner circumference is fixed to a cylindrical core 21. The rotary table 2 is made of transparent quartz. The core 21 is fixed to the upper end of a vertically extending rotating shaft 22. The rotating shaft 22 penetrates the bottom 14 of the processing container 1, and its lower end is held by a drive unit 23. The drive unit 23 rotates the rotating shaft 22 around its axis. As a result, the rotary table 2 rotates around the center of the processing container 1 via the rotating shaft 22 and the core 21.

[0013] The rotating shaft 22 and the drive unit 23 are housed within a cylindrical case body 20 with an open top. The case body 20 is airtightly fixed to the bottom 14 of the processing container 1 via a flange at its upper end. As a result, the internal space of the case body 20 is isolated from the outside of the case body 20 and is in communication with the processing chamber of the processing container 1.

[0014] As shown in FIG. 2, a plurality (five in FIG. 2) of circular mounting recesses 24 (mounting portions) on which the substrate W can be placed are provided along the rotation direction of the rotary table 2 on the upper surface of the rotary table 2. Examples of the substrate W to be subjected to substrate processing include semiconductor wafers such as silicon semiconductors, compound semiconductors, or oxide semiconductors. The substrate W may have recesses such as trenches and vias on its surface.

[0015] The mounting recess 24 has an inner diameter slightly larger than the diameter of the substrate W (for example, 300 mm) and a depth substantially equal to the thickness of the substrate W. Thereby, in a state where the substrate W is placed in the mounting recess 24, the region on the upper surface of the rotary table 2 where the substrate W is not placed and the upper surface of the substrate W are substantially at the same height.

[0016] The substrate processing apparatus 100 includes a gas supply unit 30 for supplying gas into the processing chamber 1. The gas supply unit 30 is formed, for example, of quartz and includes a plurality of gas nozzles 30N extending linearly. Each gas nozzle 30N fixes an introduction port 30a, which is a base end portion, to the side portion 13 of the processing chamber 1 and extends to the vicinity of the center along the radial direction of the processing chamber 1. Each gas nozzle 30N extends parallel to the upper surface of the rotary table 2 in the processing chamber. A plurality of gas discharge holes 30h are formed in each gas nozzle 30N and open downward in the vertical direction toward the rotary table 2 (see also FIG. 3). The gas discharge holes 30h are arranged at equal intervals along the axial direction (radial direction of the processing chamber 1).

[0017] The gas supply unit 30 includes a raw material gas supply unit 31 that supplies a raw material gas, a reaction gas supply unit 32 that supplies a reaction gas, and a first separation gas supply unit 34 and a second separation gas supply unit 35 that supply a separation gas. Further, the raw material gas supply unit 31, the reaction gas supply unit 32, the first separation gas supply unit 34, and the second separation gas supply unit 35 each include one raw material gas nozzle 31N, one reaction gas nozzle 32N, one first separation gas nozzle 34N, and one second separation gas nozzle 35N. However, the number of gas nozzles 30N is not particularly limited, and a plurality of them may be provided. In the processing container 1 in the illustrated example, the second separation gas nozzle 35N, the raw material gas nozzle 31N, the first separation gas nozzle 34N, and the reaction gas nozzle 32N are arranged in this order clockwise from the transfer port 16 provided in the side portion 13.

[0018] The raw material gas supply unit 31 connects a raw material gas supply path to the introduction port 30a of the raw material gas nozzle 31N that protrudes outside the processing container 1. The raw material gas supply path includes a raw material gas supply source, an opening / closing valve, a flow rate regulator, etc. (not shown) in order to supply the raw material gas to the raw material gas nozzle 31N. The raw material gas supplied by the raw material gas supply unit 31 to the processing chamber may be an appropriate gas selected according to the type of film to be formed on the substrate W. For example, when forming a titanium film on the substrate W, a titanium-containing gas is supplied as the raw material gas.

[0019] The reaction gas supply unit 32 connects a reaction gas supply path to the introduction port 30a of the reaction gas nozzle 32N that protrudes outside the processing container 1. The reaction gas supply path includes a reaction gas supply source, an opening / closing valve, a flow rate regulator, etc. (not shown) in order to supply the reaction gas to the reaction gas nozzle 32N. The reaction gas supplied by the reaction gas supply unit 32 to the processing chamber may also be an appropriate gas selected according to the type of film to be formed on the substrate W. For example, when oxidizing the titanium film adhered to the substrate W, an oxygen-containing gas is supplied as the reaction gas.

[0020] The first separation gas supply unit 34 connects a separation gas supply path to the introduction port 30a of the first separation gas nozzle 34N, which protrudes outside the processing container 1. The first separation gas supply path includes a separation gas supply source (not shown), an on / off valve, a flow rate regulator, etc., for supplying separation gas to the first separation gas nozzle 34N. The second separation gas supply unit 35 connects a separation gas supply path to the introduction port 30a of the second separation gas nozzle 35N, which protrudes outside the processing container 1. The second separation gas supply path includes a separation gas supply source (not shown), an on / off valve, a flow rate regulator, etc., for supplying separation gas to the second separation gas nozzle 35N. The separation gas supplied by the first separation gas supply unit 34 and the second separation gas supply unit 35 is selected appropriately from noble gases such as argon (Ar) and helium (He), and inert gases such as nitrogen (N2) gas.

[0021] Furthermore, the processing container 1 is equipped with two convex portions 4 along the circumferential direction. The convex portions 4 have a roughly fan-shaped planar form cut in an arc shape. In this embodiment, the inner arc is connected to the projection portion 5 described later, and the outer arc is positioned along the inner circumferential surface of the side portion 13 of the processing container 1.

[0022] As shown in Figure 3, the convex portion 4 is attached to the underside of the top plate 11. Therefore, inside the processing container 1, there is a flat, low ceiling surface 46 which is the underside of the convex portion 4, and ceiling surfaces 47 located on both sides of the circumferential direction of this ceiling surface 46 and which are higher than the ceiling surface 46.

[0023] A groove 4a is formed in the convex portion 4, extending along the radial direction of the rotary table 2. The first separation gas nozzle 34N is housed in this groove 4a. Similarly, a groove 4a is formed in the other convex portion 4, and the second separation gas nozzle 35N is housed in this groove 4a (see Figure 2).

[0024] In Figure 3, a raw material gas nozzle 31N is provided in the space 481 to the right of the convex portion 4 (the space vertically below the high ceiling surface 47). A reaction gas nozzle 32N is provided in the space 482 to the left of the convex portion 4 (the space vertically below the high ceiling surface 47). These gas nozzles 30N are spaced apart from the ceiling surface 47 and located near the substrate W.

[0025] On the other hand, the low ceiling surface 46 forms a narrow separation space H relative to the rotary table 2. Since the volume of separation space H is smaller than the volumes of spaces 481 and 482, when nitrogen gas (separation gas) is supplied from the first separation gas nozzle 34N, the nitrogen gas can raise the pressure in separation space H compared to the pressures of spaces 481 and 482. As a result, separation space H forms a pressure barrier between spaces 481 and 482. Moreover, the nitrogen gas flowing from separation space H into spaces 481 and 482 acts as a counterflow between the raw material gas and the reaction gas. Therefore, the raw material gas and the reaction gas are separated by separation space H, and their mixing and reaction are suppressed.

[0026] Returning to Figures 1 and 2, the projection 5 provided on the underside of the top plate 11 surrounds the outer circumference of the core portion 21 that fixes the rotating table 2. This projection 5 is continuous with the part of the convex portion 4 that is on the rotation center side, and its underside is set at the same height as the ceiling surface 46.

[0027] Furthermore, exhaust ports 61 are formed between the rotary table 2 and the side portion 13 of the container body 12. An exhaust pipe 63 is connected to the exhaust port 61, and this exhaust pipe 63 is connected to a vacuum pump 64, which is a vacuum evacuation means, via a pressure regulator 65.

[0028] A heating unit 7 is provided in the space between the bottom 14 of the processing container 1 and the rotary table 2 to heat each substrate W placed on the rotary table 2. The heating unit 7 heats each substrate W to the target temperature set in the substrate processing recipe. The target temperature is not particularly limited, but for example, it can be in the range of 650°C to 800°C. In particular, if a carbon wire heater is used for the heater wire 71 of the heating unit 7, setting the temperature to 700°C or higher will cause it to emit a lot of radiant heat. The configuration of this heating unit 7 will be described in detail later.

[0029] Furthermore, the bottom portion 14 on the side of the rotation center that is closer to the heating element 7 has a projection 12a that protrudes from the center of the lower surface of the rotary table 2 so as to approach the core portion 21. There is a narrow space between this projection 12a and the core portion 21. In addition, the gap between the inner circumferential surface of the through hole for the rotating shaft 22 that penetrates the bottom portion 14 and the rotating shaft 22 is narrow, and these narrow spaces are in communication with the case body 20.

[0030] Furthermore, the case body 20 is provided with a purge gas supply pipe 25 for supplying purge gas (the same gas as the separation gas supplied by the first separation gas nozzle 34N) into a narrow space. In addition, at the bottom 14 below the heating unit 7, a plurality of purge gas supply pipes 74 are provided at appropriate intervals along the circumferential direction for purging the space in which the heating unit 7 is located.

[0031] When purge gas is supplied from the purge gas supply pipe 25, this purge gas flows through the gap between the inner circumferential surface of the through hole of the rotating shaft 22 and the rotating shaft 22, and through the gap between the protrusion 12a and the core 21, through the space between the rotary table 2 and the heating unit 7, and is exhausted from multiple exhaust ports 61. Also, when purge gas is supplied from the purge gas supply pipe 74, this purge gas flows out from the space in which the heating unit 7 is housed through a gap (not shown) and is exhausted from multiple exhaust ports 61. This flow of purge gas suppresses the mixing of raw material gas and reaction gas through the space in the lower center of the processing container 1 and the space below the rotary table 2.

[0032] Furthermore, a separation gas supply pipe 51 is connected to the center of the top plate 11 of the processing container 1. The separation gas supply pipe 51 supplies separation gas (the same gas as the separation gas supplied by the first separation gas nozzle 34N) to the space between the top plate 11 and the core section 21. The separation gas supplied to this space flows along the surface of the rotary table 2 through the narrow space between the protrusion 5 and the rotary table 2. The space between the protrusion 5 and the rotary table 2 closer to the center is maintained at a higher pressure by the separation gas. Therefore, mixing of the raw material gas and the reaction gas through the space closer to the center is suppressed.

[0033] Furthermore, as shown in Figure 2, a transport port 16 is formed in the side wall of the processing container 1 for transferring the substrate W between the external transport robot 16A and the rotary table 2. The transport port 16 is opened and closed by a gate valve (not shown). The substrate processing apparatus 100 receives or transfers the substrate W to and from the transport robot 16A by positioning each of the mounting recesses 24 of the rotary table 2 opposite the transport port 16. For this reason, the substrate processing apparatus 100 is equipped with a lift pin and a lifting mechanism (both not shown) adjacent to the transport port 16 on the lower side of the rotary table 2, which penetrate the mounting recesses 24 and lift the substrate W from the back side.

[0034] The substrate processing apparatus 100 includes a control unit 90 that controls the operation of the entire apparatus. The control unit 90 is a computer having a processor, memory, input / output interface, and communication interface. The processor is a combination of one or more of the following: CPU (Central Processing Unit), GPU (Graphics Processing Unit), ASIC (Application Specific Integrated Circuit), FPGA (Field-Programmable Gate Array), circuit consisting of multiple discrete semiconductors, etc. The memory includes main memory and auxiliary memory. The memory may be configured by appropriately combining volatile memory and non-volatile memory (e.g., hard disk, flash memory, compact disc, DVD (Digital Versatile Disc), etc.). In other words, in this disclosure, the control unit 90 is an electronic circuit having a CPU, GPU, ASIC, FPGA, etc., and performs various control operations described in this specification by executing instruction codes stored in memory or by circuit design for special applications.

[0035] For example, in substrate processing, the control unit 90 controls the heating unit 7 to heat each substrate W while reducing the pressure inside the processing container 1 with a vacuum pump 64. Furthermore, the control unit 90 controls the rotary table 2 to rotate (revolve) each substrate W, and controls the gas supply unit 30 to supply raw material gas, reaction gas, separation gas, etc., to the respective areas of the processing container 1, thereby forming a film on each rotating substrate W. Specifically, each substrate W is coated with raw material gas discharged in the raw material gas processing space P1 where the raw material gas nozzle 31N is located. Then, each substrate W reacts with the raw material gas attached to the substrate W by the reaction gas discharged in the reaction gas processing space P2 where the reaction gas nozzle 32N is located, thereby forming the desired film. In addition, in a plan view, the processing container 1 can be separated into the raw material gas processing space P1 and the reaction gas processing space P2 by supplying separation gas to the separation space H.

[0036] <Configuration of the heating section 7> Next, the configuration of the heating section 7 of the substrate processing apparatus 100 will be described with reference to Figures 1, 4 to 6. The heating section 7 comprises a plurality of heater wires 71 provided along the radial direction of the bottom 14 of the processing container 1, a cover 72 provided between each heater wire 71 and the rotary table 2, and an outer peripheral support portion 73 that supports the cover 72 on the outer periphery of the heating section 7. Furthermore, the heating section 7 has a lens member 75 installed at an appropriate position adjacent to one of the heater wires 71. Note that in Figure 4, the cover 72 is omitted for the sake of easier understanding of the figure.

[0037] Each heater wire 71 is heated by power supplied from a heating control module (not shown) based on a command from the control unit 90, thereby transferring radiant heat to its surroundings. Examples of heater wires 71 include carbon wire heaters. Carbon wire heaters may be made of carbon fiber or graphite. However, the heater wire 71 is not limited to carbon; halogen, ceramic, nichrome wire, etc., may also be used.

[0038] Each heater wire 71 is repeatedly provided with a straight section 71a that extends linearly over a short distance above the bottom 14, and a bent section 71b that slightly bends and connects adjacent straight sections 71a. As a result, each heater wire 71, in plan view, exhibits a roughly arc-shaped polygon. Furthermore, each heater wire 71 is supported by a support section 71c that protrudes vertically upward from the bottom 14, and extends approximately parallel to the upper surface of the bottom 14 at a position away from the upper surface of the bottom 14. The ends of each heater wire 71 exposed on the bottom 14 are inserted into the bottom 14, for example, via the support section 71c, and electrically connected to wiring (not shown) inside the bottom 14. This wiring is connected to a heating control module provided outside the processing container 1.

[0039] The heating section 7 is formed by arranging multiple arc-shaped heater wires 71 at the same radial position on the bottom 14 with spacing in the circumferential direction, thereby creating a roughly circular line overall. Multiple of these roughly circular lines are arranged concentrically around the bottom 14 at different radial positions. Each of these concentric heater wires 71 is arranged to straddle each substrate W placed in the mounting recess 24 of the rotary table 2 in the radial direction, thereby heating each substrate W with the entire heater wire 71.

[0040] Furthermore, the heating unit 7 may be configured to independently heat each of the multiple zones Z1 to Z5 along the radial direction of the processing container 1 and the rotary table 2. For example, the heating unit 7 is divided into zones Z1 (inner), Z2 (sub-inner), Z3 (middle), Z4 (sub-outer), and Z5 (outer) in order from the center of the rotary table 2 outward in the radial direction. However, the number of zones and their division positions are not particularly limited; there may be four or fewer zones, or six or more zones.

[0041] Each zone Z1 to Z5 is ring-shaped, circling the same radius position (concentrically) within the processing container 1. Each zone Z1 to Z5 is heated by one or more heater wires 71 located within it. Each heater wire 71 located within the same zone Z1 constitutes a group supplied with the same amount of power from the heating control module. The same applies to zones Z2 to Z5. By adjusting the amount of power for each zone Z1 to Z5 in this way, the heating unit 7 can improve the in-plane temperature uniformity of each substrate W placed on the rotary table 2.

[0042] As shown in Figures 1 and 5, the cover 72 of the heating section 7 is formed as an annular plate that bridges the space between the upper end of the protrusion 12a and the outer peripheral support 73. That is, each heater wire 71 of the heating section 7 is housed in a space surrounded by the bottom 14, the protrusion 12a, the cover 72, and the outer peripheral support 73. As described above, purge gas is supplied to this space from the purge gas supply pipe 74. This prevents the entry of processing gas (raw material gas, reaction gas) into the space, thereby suppressing deterioration of the heater wire 71 and the lens member 75.

[0043] It is preferable to select a material for the cover 72 that has heat resistance capable of withstanding high temperatures and transparency that allows radiant heat from each heater wire 71 to pass through easily. For example, transparent quartz can be used as the material for the cover 72.

[0044] Furthermore, the lens member 75 is installed on some of the heater wires 71 of the heating section 7. The lens member 75 is positioned to cover the top of each corresponding heater wire 71 and has the function of transmitting and focusing radiant heat, which is electromagnetic waves emitted by the heater wires 71. The material of this lens member 75, like the cover 72, should preferably be transparent quartz.

[0045] The lens member 75 has a semicircular inner surface 75a on its lower side facing the heater wire 71, and a flat surface 75b on the opposite side (upper side) of the semicircular inner surface 75a. The lens member 75 is positioned close to the heater wire 71 such that the upper half of the heater wire 71 fits into the space enclosed by the semicircular inner surface 75a. For example, the lens member 75 is supported by a plurality of lens supports 76 installed on the bottom 14, so that it is positioned at equal intervals from the outer surface of the heater wire 71.

[0046] Furthermore, the lens member 75 according to this embodiment is formed as a multi-lens structure composed of multiple components. Specifically, the lens member 75 includes a center condenser 77 located in the center and a pair of side condensers 78 located on either side of the center condenser 77. The center condenser 77 and the pair of side condensers 78 have different refractive indices. For example, the center condenser 77 and the pair of side condensers 78 are formed so that their refractive indices differ appropriately by varying the amount or type of additives added to the quartz.

[0047] A clearance C may be interposed between the center light-gathering body 77 and the pair of side light-gathering bodies 78 to separate them. For example, in the lens member 75, a clearance C is created when multiple protrusions 79 projecting from one side of either the center light-gathering body 77 or the pair of side light-gathering bodies 78 contact the other side, thus maintaining their relative positions. However, if the refractive index of the center light-gathering body 77 and the refractive index of the pair of side light-gathering bodies 78 are different, the lens member 75 can change the direction of radiant heat at the boundary, so a clearance C is not necessary. Alternatively, in a configuration with a clearance C between the center light-gathering body 77 and the pair of side light-gathering bodies 78, the refractive index of the center light-gathering body 77 and the refractive index of the side light-gathering bodies 78 may be the same. This is because the clearance C itself functions as a boundary that changes the refractive index of radiant heat.

[0048] The center light concentrator 77 includes a heater-facing surface 771 that is arc-shaped in cross-sectional view and forms a semicircular inner surface 75a, a linear opposite surface 772 that is linear in cross-sectional view and forms a flat surface 75b, and a pair of inclined side surfaces 773 that extend between both ends of the heater-facing surface 771 and both ends of the opposite surface 772. The pair of inclined side surfaces 773 are inclined such that the distance between them increases from the heater-facing surface 771 toward the opposite surface 772.

[0049] As a result, radiant heat emitted from the top of the heater wire 71 enters the center concentrator 77 through the heater-facing surface 771. The center concentrator 77 refracts the radiant heat using the heater-facing surface 771 and the pair of inclined sides 773, causing it to emit radiant heat in a direction perpendicular to the opposite surface 772 (normal direction). The radiant heat emitted from the opposite surface 772 then travels in a straight line parallel to each other.

[0050] Each of the pair of side light-gathering bodies 78 includes a heater-facing surface 781 that is arc-shaped in cross-sectional view and forms a semicircular inner surface 75a, a linear opposite surface 782 that is linear in cross-sectional view and forms a flat surface 75b, an inner surface 783 that faces the inclined side surface 773 of the center light-gathering body 77, and an outer surface 784 that forms the side surface of the lens member 75. The inner surface 783 is inclined so as to be parallel to the inclined side surface 773. The outer surface 784 is inclined while slightly bulging in an arc shape.

[0051] The lower ends of the pair of side light-concentrators 78 (the boundary between the heater-facing surface 781 and the outer surface 784) are located midway along the heater wire 71 in the vertical direction. As a result, radiant heat emitted between the top of the heater wire 71 and the midpoint in the vertical direction enters the interior of the pair of side light-concentrators 78 from the heater-facing surface 781. The pair of side light-concentrators 78 refract the radiant heat with their outer surfaces 784, causing the radiant heat to be emitted in a direction perpendicular to the opposite surface 782 (normal direction). The radiant heat emitted from the opposite surface 782 then travels in a straight line parallel to each other.

[0052] In this way, the lens member 75, by combining the center light-gathering body 77 and the pair of side light-gathering bodies 78, can direct the radiant heat emitted from the upper half of the heater wire 71 parallel to the direction normal to the flat surface 75b. As a result, it becomes possible to stably apply a beam of radiant heat to the substrate W located vertically above the lens member 75.

[0053] As shown in Figure 4, the lens member 75 is formed to a length corresponding to the straight portion 71a of the heater wire 71, along the extending direction of the heater wire 71. That is, the lens member 75 is provided so as to overlap the straight portion 71a of the heater wire 71, but not on the bent portion 71b of the heater wire 71. For this reason, the lens member 75 can be easily formed as a component in which the center light-gathering body 77 and the pair of side light-gathering bodies 78 are continuous in a straight line with the same cross-sectional shape. The heating unit 7 can use multiple of these components (lens members 75) to cover most of each heater wire 71 that extends in a substantially arc shape.

[0054] The heating section 7 has the lens member 75 installed on only some of the heater wires 71 among the multiple heater wires 71 arranged radially in the bottom section 14. Here, each substrate W placed on the rotary table 2 is affected by the rotation of the rotary table 2, the supply of gas by the gas supply section 30, and the exhaust of gas from the exhaust port 61 during substrate processing, resulting in temperature unevenness. For example, near the center of the rotary table 2, separation gas supplied from the separation gas supply pipe 51 (see Figure 1) flows in. Therefore, the temperature of each substrate W tends to decrease near the center of the rotary table 2. Also, for example, near the outer circumference of the rotary table 2, various gases discharged to the processing container 1 are directed towards the exhaust port 61. Therefore, the temperature of each substrate W tends to decrease near the outer circumference of the rotary table 2 as well.

[0055] The heating unit 7 can independently adjust the temperature along the radial direction of the rotary table 2 using a plurality of pre-defined zones Z1 to Z5. However, depending on the substrate processing content, such as when the gas supply is large, simply raising the temperature of zones Z1 and Z5 compared to other zones may not be sufficient to compensate for the temperature drop of the substrate W near the center or outer edge of the rotary table 2.

[0056] Therefore, in this embodiment, the heating unit 7 has lens members 75 installed on all of the heater wires 71 in zone Z1 and on some of the heater wires 71 in zone Z2 in order to increase the amount of heat near the center of the rotary table 2. In addition, the heating unit 7 has lens members 75 installed on some of the heater wires 71 in zone Z4 and on all of the heater wires 71 in zone Z5 in order to increase the amount of heat near the outer circumference of the rotary table 2.

[0057] In particular, as shown in Figure 5, the heater wire 71 in zone Z4 is positioned to overlap with the substrate W placed on the rotary table 2 in a vertical direction. Therefore, the orientation of the lens member 75 installed on the heater wire 71 in zone Z4 is adjusted so that the flat surface 75b is aligned horizontally (parallel to the rotary table 2).

[0058] On the other hand, each heater wire 71 in zone Z5 is positioned so as not to overlap with the substrate W placed on the rotary table 2 in the outer vertical direction. Therefore, the orientation of each lens member 75 installed on each heater wire 71 in zone Z5 is adjusted so that the flat surface 75b is inclined with respect to the horizontal direction. The inclination angle of the flat surface 75b with respect to the horizontal direction is preferably adjusted appropriately depending on the positional relationship with the substrate W. For example, in this embodiment, the inclination angle is set to 30°. This allows the lens members 75 installed on each heater wire 71 in zone Z5 to direct radiant heat towards the vicinity of the outer circumference of the rotary table 2 and towards the outer circumference of the substrate W.

[0059] Similarly, the lens member 75 installed on the heater wire 71 in zone Z1 has its tilt angle adjusted so that it can direct radiant heat towards the periphery of the substrate W closer to the center. Furthermore, since the heater wire 71 in zone Z2 is positioned to overlap the substrate W along the vertical direction, the orientation of the lens member 75 is adjusted so that its flat surface 75b is horizontal.

[0060] <Substrate Processing Method> The substrate processing apparatus 100 according to this embodiment is basically configured as described above, and its operation (substrate processing method) will be explained below with reference to Figure 7.

[0061] In substrate processing, the control unit 90 of the substrate processing apparatus 100 first controls the substrate processing apparatus 100 and the transport robot 16A to sequentially place the substrates W into the five placement recesses 24 of the rotary table 2 (step S101: (A)).

[0062] Subsequently, the control unit 90 controls the vacuum pump 64 to exhaust the gas from the processing container 1, thereby reducing the pressure inside the processing container 1, and also controls the heating unit 7 to heat each substrate W (step S102). At this time, the temperature control modules connected to each heater wire 71 supply power to each zone Z1 to Z5 based on the command from the control unit 90, thereby adjusting the temperature of each substrate W to the target temperature.

[0063] Then, the control unit 90 controls the drive unit 23 to rotate (revolve) the rotary table 2 at the target speed (step S103). The substrate processing apparatus 100 maintains this target speed of the rotary table 2 even during substrate processing.

[0064] Furthermore, the control unit 90 controls the gas supply unit 30 to supply gas (raw material gas, reaction gas, separation gas) into the processing container 1, thereby performing substrate processing on each substrate W (step S104). As a result, each substrate W rotates inside the processing container 1, and an appropriate film is formed on its surface.

[0065] In this substrate processing, the heating unit 7 controls the power supplied to each heater wire 71 by a temperature control module so that the temperature of each substrate W reaches the target temperature. At this time, the lens members 75 located in zones Z1, Z2, Z4, and Z5 suppress the waste of radiant heat emitted from the heater wire 71 and concentrate the radiant heat towards the center of the rotating table 2 and towards the outer edge of the rotating table 2 of each substrate W. As a result, even if the temperature of each substrate W is accelerated by the rotation of the rotating table 2, gas flow, etc., a large amount of heat is added to that part from the heating unit 7, thereby improving the uniformity of temperature in the plane.

[0066] Furthermore, the control unit 90 determines the completion of the substrate processing when it is being executed (step S105). For example, the control unit 90 compares the target period set in the substrate processing recipe with the actual period of the substrate processing and determines the completion of the substrate processing based on whether the actual period has reached the target period.

[0067] When the control unit 90 determines that the substrate processing is complete, it performs a termination process to end the substrate processing (step S106). In the termination process, the gas supply from the gas supply unit 30 is stopped, the rotation of the rotary table 2 is stopped, the heating of the heating unit 7 is stopped, etc. After the substrate processing is completed, the substrate processing apparatus 100 works in cooperation with the transport robot 16A to perform the reverse operation of step S101, thereby transporting each substrate W on the rotary table 2 to the outside of the processing container 1.

[0068] The substrate processing apparatus 100 described above can direct the radiant heat of the heater wire 71 in a desired direction by installing a lens member 75 in the heating section 7. As a result, during substrate processing, the amount of heat can be increased in areas where the temperature of each substrate W tends to decrease. Consequently, the substrate processing apparatus 100 can promote in-plane temperature uniformity of the substrate W and improve the in-plane uniformity of the substrate processing.

[0069] It should be noted that the substrate processing apparatus 100 and the substrate processing method according to the embodiment are not limited to the above-described embodiment and can be modified in various ways. For example, the substrate processing performed by the substrate processing apparatus 100 is not limited to film formation. Other substrate processing methods include etching, cleaning, modification, and ashing.

[0070] Furthermore, although the substrate processing apparatus 100 is configured to only revolve each substrate W placed on the rotary table 2, it may also be configured to rotate each substrate W in addition to revolving it. Alternatively, although the substrate processing apparatus 100 is configured to heat multiple substrates W on the rotary table 2, it is not limited to this configuration, and may also be a single-wafer type apparatus that processes a single substrate W placed on a substrate support. In this case as well, the substrate processing apparatus may be configured to include a heating unit 7 inside the substrate support for heating the substrate W, and a lens member 75 may be installed on the heater wire 71 of this heating unit 7.

[0071] Furthermore, the heating section 7 may have a heater wire 71 that is curved without a straight section 71a and a bent section 71b, and the lens member 75 may also be formed as a continuous member that is curved in accordance with the heater wire 71. Moreover, although the lens member 75 in this embodiment is supported by a lens support 76 protruding from the bottom 14, it is not limited to this configuration. For example, the lens member 75 may be supported by a support (not shown) protruding from the cover 72. Alternatively, the lens member 75 may be integrally molded with the cover 72, allowing the radiant heat of the heater wire 71 to pass through together with the cover 72.

[0072] As shown in the first modified example in Figure 8, the heating section 7A may be configured such that the heater wires 71 in zones Z1 and Z5 do not have lens members 75, while the heater wires 71 in zones Z2 and Z4 do have lens members 75. In this case, the lens member 75 in zone Z2 is positioned (tilt angle) so as to direct radiant heat toward the center of the rotary table 2. The lens member 75 in zone Z4 is positioned so as to direct radiant heat toward the outer edge of the rotary table 2. By installing the lens members 75 in this way, it is possible to increase the amount of heat in the central and outer edges of the rotary table 2, where the temperature tends to drop easily. By promoting temperature uniformity of the rotary table 2, it is expected that the in-plane temperature uniformity of the substrate W placed on the rotary table 2 will be improved.

[0073] In short, the lens member 75 can be installed on any heater wire 71, such as directly below the area where you want to increase the heat, or on a heater wire 71 located close to the area where you want to increase the heat. By adjusting the orientation (tilt angle) of the lens member 75, the radiant heat from the heater wire 71 can be directed in the appropriate direction. For example, in zones where there are many heater wires 71, the heat tends to increase easily. By installing the lens member 75 in such a zone and directing the radiant heat in a different direction, the heat in the zone with many heater wires 71 can be suppressed, and the heat in the surrounding area can be effectively increased.

[0074] Furthermore, as shown in the second modified example in Figure 9, in addition to installing the lens member 75 on the vertically upper side of the heater wire 71, the heating section 7B may also have a lens member 75A installed on the vertically lower side of the heater wire 71. That is, the lens member 75A is positioned between the heater wire 71 and the bottom 14 of the container body 12.

[0075] The lens member 75A directs the radiant heat from the lower half of the heater wire 71 in a direction perpendicular to the plane direction of the bottom 14. The bottom 14, upon which the radiant heat is incident in a perpendicular direction, can reflect this radiant heat back to the lens member 75A (in a way that suppresses scattering and diffuse reflection). The reflected radiant heat that returns to the lens member 75A passes through the lens member 75A and then returns to the heater wire 71. As a result, the amount of heat in the heater wire 71 increases, and radiant heat enters the lens member 75 on the vertically upper side from the heater wire 71 and is emitted from the flat surface 75b of the lens member 75 toward the substrate W.

[0076] In this way, by installing the lens member 75A on the vertically downward side of the heater wire 71, the heating unit 7B can effectively direct the radiant heat radiated vertically downward to the lens member 75. In other words, the heating unit 7B can minimize wasted radiant heat from the heater wire 71 and further increase the amount of heat applied to the substrate W.

[0077] Furthermore, as shown in the third modified example in Figure 10, the heating section 7C may be configured such that a lens member 75A is installed between the bottom 14 of the processing container 1 and the heater wire 71, while the lens member 75 is not installed on the vertically upper side of the heater wire 71. Even in this case, as described above, the radiant heat transmitted through the lens member 75A is reflected by the bottom 14, thereby increasing the heat output of the heater wire 71 and increasing the heat output of the substrate W on the vertically upper side.

[0078] <Regarding the technical concept and effects> The technical ideas and effects of this disclosure, as described in the embodiments above, are described below.

[0079] A substrate processing apparatus 100 includes a processing container 1, a substrate support section (rotating table 2) provided inside the processing container 1 for supporting a substrate W, and a heating section 7 for heating the substrate W supported by the substrate support section, wherein the heating section 7 comprises a heater wire 71 that transmits radiant heat to the surroundings during heating, and lens members 75, 75A provided adjacent to the heater wire 71, the lens members 75, 75A being positioned between the substrate support section and the heater wire 71 to direct radiant heat in the direction where the substrate W is located, and / or being positioned between the processing container 1 and the heater wire 71 to direct radiant heat in a direction perpendicular to the surface of the processing container 1.

[0080] As described above, when the substrate processing apparatus 100 heats the substrate W using the heating unit 7, the amount of heat used to heat the substrate W can be increased by installing lens members 75 and 75A adjacent to the heater wire 71. Specifically, the lens member 75, positioned between the substrate support unit (rotating table 2) and the heater wire 71, directs radiant heat in the direction of the substrate W, thereby increasing the amount of heat on the substrate W. In addition, the lens member 75A, positioned between the processing container 1 and the heater wire 71, directs radiant heat in a direction perpendicular to the surface of the processing container 1, thereby reflecting the radiant heat back to the heater wire 71. As a result, the amount of heat on the heater wire 71 increases, which in turn increases the amount of heat on the substrate W.

[0081] Furthermore, the lens members 75 and 75A each have a center light-gathering body 77 and a pair of side light-gathering bodies 78, which are installed on both sides of the center light-gathering body 77. In this way, the lens member 75 has a double structure consisting of a center light-gathering body 77 and a pair of side light-gathering bodies 78, which allows the radiant heat from the heater wire 71 to be refracted in a desired direction at each light-gathering body.

[0082] Furthermore, a clearance C is provided between the center light-gathering body 77 and the pair of side light-gathering bodies 78 to separate them. This allows the lens members 75 and 75A to easily form shapes with different refractive indices at the boundary between the center light-gathering body 77 and the pair of side light-gathering bodies 78. As a result, the lens members 75 and 75A can appropriately change the direction of radiant heat between the center light-gathering body 77 and the pair of side light-gathering bodies 78.

[0083] Furthermore, the center light-gathering body 77 and the pair of side light-gathering bodies 78 are made of materials with different refractive indices. This allows the lens members 75 and 75A to appropriately refract radiant heat at the boundary between the center light-gathering body 77 and the pair of side light-gathering bodies 78.

[0084] Furthermore, the lens members 75 and 75A have an inner circumferential surface (semicircular inner circumferential surface 75a) that faces the heater wire 71 and concentrically surrounds the heater wire 71, and a flat surface 75b provided on the opposite side of the inner circumferential surface. As a result, the lens members 75 and 75A can cover a portion of the heater wire 71 with their inner circumferential surfaces, making it possible to further suppress the waste of radiant heat emitted from the heater wire 71.

[0085] Furthermore, the lens members 75 and 75A are installed in a position where the flat surface 75b is inclined with respect to the horizontal direction. This allows the substrate processing apparatus 100 to direct the radiant heat from the heater wire 71 diagonally from the lens member 75, and to irradiate the desired position with radiant heat.

[0086] Furthermore, the substrate support section includes a rotary table 2 that rotatably supports multiple substrates W, the heating section 7 is installed vertically below the rotary table 2, and multiple heater wires 71 are provided concentrically along the radial direction of the rotary table 2. As a result, the substrate processing apparatus 100 can stably perform substrate processing while heating all of the multiple substrates W with the heating section 7.

[0087] Furthermore, the lens member 75 is installed on the heater wire 71 located near the outer circumference of the rotary table 2. This allows the substrate processing apparatus 100 to increase the heat output of the substrate W near the outer circumference of the rotary table 2, where the temperature tends to be lower, thereby improving the in-plane temperature uniformity of the substrate W.

[0088] Furthermore, the lens member 75 is installed on the heater wire 71 located near the center of the rotary table 2. This allows the substrate processing apparatus 100 to increase the heat output of the substrate W near the center of the rotary table 2, where the temperature tends to be lower, thereby improving the in-plane temperature uniformity of the substrate W.

[0089] Furthermore, a second aspect of the present disclosure is a substrate processing method for a substrate processing apparatus 100, which includes a processing container 1, a substrate support section (rotating table 2) provided inside the processing container 1 for supporting a substrate W, and a heating section 7 for heating the substrate W supported by the substrate support section, wherein the heating section 7 comprises a heater wire 71 that transmits radiant heat to the surroundings during heating, and a lens member 75 provided adjacent to the heater wire 71, and the substrate processing method comprises (A) the step of placing the substrate W on the substrate support section, and (B) the step of heating the heater wire 71 to direct the radiant heat in the direction of the substrate W by the lens member 75 positioned between the substrate support section and the heater wire 71, and / or directing the radiant heat in a direction perpendicular to the surface of the processing container 1 by the lens member 75A positioned between the processing container 1 and the heater wire 71. Even in this case, the substrate processing method can increase the amount of heat used to heat the substrate W.

[0090] The substrate processing apparatus 100 and substrate processing method according to the embodiments disclosed herein are illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be otherwise configured and combined in a non-consistent manner. [Explanation of Symbols]

[0091] 1. Processing container 2 Rotating Tables 7 Heating section 71 Heater wire 75, 75A Lens components 100 Substrate Processing Equipment W board

Claims

1. Processing container and A substrate support portion is provided inside the processing container to support the substrate, A substrate processing apparatus comprising a heating unit for heating the substrate supported by the substrate support unit, The heating unit comprises a heater wire that transmits radiant heat to the surroundings during heating, and a lens member provided adjacent to the heater wire. The lens member is positioned between the substrate support and the heater wire to direct the radiant heat in the direction in which the substrate is located, and / or between the processing container and the heater wire to direct the radiant heat in a direction perpendicular to the surface of the processing container. Circuit board processing equipment.

2. The lens member comprises a center light-gathering body and a pair of side light-gathering bodies installed on both sides of the center light-gathering body. The substrate processing apparatus according to claim 1.

3. A clearance is provided between the center light-gathering body and the pair of side light-gathering bodies to separate them. The substrate processing apparatus according to claim 2.

4. The center light-gathering body and the pair of side light-gathering bodies are formed from materials with different refractive indices. The substrate processing apparatus according to claim 2.

5. The aforementioned lens member is An inner circumferential surface that faces the heater wire and concentrically surrounds the heater wire, Having a flat surface provided on the opposite side of the inner circumferential surface, A substrate processing apparatus according to any one of claims 1 to 4.

6. The lens member is installed in a position in which the flat surface is inclined with respect to the horizontal direction. The substrate processing apparatus according to claim 5.

7. The substrate support portion includes a rotary table that rotatably supports a plurality of substrates, The heating unit is installed on the vertically lower side of the rotating table, The heater wires are arranged in a concentric pattern along the radial direction of the rotary table. A substrate processing apparatus according to any one of claims 1 to 4.

8. The lens member is installed on the heater wire located near the outer circumference of the rotating table. The substrate processing apparatus according to claim 7.

9. The lens member is installed on the heater wire located near the center of the rotating table. The substrate processing apparatus according to claim 7.

10. Processing container and A substrate support portion is provided inside the processing container to support the substrate, A substrate processing method for a substrate processing apparatus, comprising a heating unit for heating the substrate supported by the substrate support unit, The heating unit comprises a heater wire that transmits radiant heat to the surroundings during heating, and a lens member provided adjacent to the heater wire. The substrate processing method is: (A) The step of placing the substrate on the substrate support portion, (B) The process of heating the heater wire and directing the radiant heat in the direction in which the substrate is located by the lens member positioned between the substrate support and the heater wire, and / or directing the radiant heat in a direction perpendicular to the surface of the processing container by the lens member positioned between the processing container and the heater wire, Substrate processing method.

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