Substrate processing apparatus, electrode, substrate processing method, semiconductor device manufacturing method and program

Abstract

The objective is to provide a technology that enables more uniform substrate processing. [Solution] A technology is provided comprising: a processing chamber for processing a substrate; a first electrode group consisting of a first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied, and a third electrode to which a reference potential is applied, arranged in the order of the first electrode, the second electrode, and the third electrode; and a second electrode group consisting of a fourth electrode to which an arbitrary potential is applied, a fifth electrode to which an arbitrary potential is applied and which has a different length from the second electrode, and a sixth electrode to which a reference potential is applied, arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, an electrode, a substrate processing method, a method for manufacturing a semiconductor device, and a program.

Background Art

[0002] As one step in the manufacturing process of a semiconductor device (device), a substrate is carried into a processing chamber of a substrate processing apparatus, and raw material gas and reaction gas are supplied into the processing chamber to form various films such as an insulating film, a semiconductor film, and a conductor film on the substrate, or substrate processing for removing various films may be performed.

[0003] In mass-produced devices in which fine patterns are formed, there may be a demand for lowering the temperature in order to suppress the diffusion of impurities or to be able to use materials with low heat resistance such as organic materials.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In order to solve such problems, it is generally performed to perform substrate processing using plasma, but it may be difficult to uniformly process the film.

[0006] An object of the present disclosure is to provide a technology that enables more uniform substrate processing.

Means for Solving the Problems

[0007] According to one aspect of the present disclosure, a plasma generating unit is provided, which comprises a processing chamber for processing a substrate; a first electrode group consisting of a first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied, and a third electrode to which a reference potential is applied, arranged in the order of the first electrode, the second electrode, and the third electrode; and a second electrode group consisting of a fourth electrode to which an arbitrary potential is applied, a fifth electrode to which an arbitrary potential is applied and which has a different length from the second electrode, and a sixth electrode to which a reference potential is applied, arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode. [Effects of the Invention]

[0008] This disclosure makes it possible to provide a technology that enables more uniform substrate processing. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic diagram of a vertical processing furnace of a substrate processing apparatus preferably used in the embodiments of the present disclosure, and shows the processing furnace portion in a vertical cross-section. [Figure 2] Figure 1 is a cross-sectional view of the substrate processing apparatus shown in Figure 1. [Figure 3] The electrode is an embodiment of the present disclosure, where (a) is a perspective view of the electrode of the present disclosure installed in an electrode holder, and (b) is a diagram showing the positional relationship between the heater, electrode holder, electrode, projection for fixing the electrode, and reaction tube of the embodiment of the present disclosure. [Figure 4] The electrode of the first modified embodiment of the present disclosure is shown in (a) a perspective view of the electrode of the first modified embodiment of the present disclosure installed in the electrode holder, and (b) a diagram showing the positional relationship between the heater, electrode holder, electrode, electrode fixing projection, and reaction tube of the first modified embodiment of the present disclosure. [Figure 5] This is an electrode according to an embodiment of the present disclosure, where (a) is a front view of the electrode according to an embodiment of the present disclosure, and (b) is a diagram illustrating how the electrode is fixed to an electrode holder. [Figure 6]Figure 1 is a schematic diagram of the controller in the substrate processing apparatus shown, and is a block diagram illustrating an example of the controller's control system. [Figure 7] Figure 1 is a flowchart showing an example of a substrate processing process using the substrate processing apparatus shown. [Modes for carrying out the invention]

[0010] The embodiments of this disclosure will be described below with reference to Figures 1 to 7. Note that the drawings used in the following description are schematic, and the dimensional relationships and proportions of the elements shown in the drawings do not necessarily correspond to reality. Furthermore, the dimensional relationships and proportions of the elements do not necessarily correspond between multiple drawings.

[0011] (1) Configuration of substrate processing apparatus (heating device) As shown in Figure 1, the processing furnace 202 of the vertical substrate processing apparatus has a heater 207 as a heating device (heating mechanism, heating section). The heater 207 is cylindrical and is mounted vertically by being supported by a holding plate. The heater 207 also functions as an activation mechanism (excitation section) that activates (excites) the gas with heat.

[0012] (Processing room) Inside the heater 207, an electrode fixing device 301 (described later) is provided, and inside the electrode fixing device 301, the electrode 300 of the plasma generation unit (described later) is provided. Furthermore, inside the electrode 300, a reaction tube 203 is provided concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed in a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is provided concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS), and is formed in a cylindrical shape with open upper and lower ends. The upper end of the manifold 209 engages with the lower end of the reaction tube 203 and is configured to support the reaction tube 203. An O-ring 220a is provided between the manifold 209 and the reaction tube 203 as a sealing member. The reaction tube 203 is installed vertically because the manifold 209 is supported by the heater base. The processing vessel (reaction vessel) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the hollow cylindrical part of the processing vessel. The processing chamber 201 is configured to accommodate multiple wafers 200 as substrates. Note that the processing vessel is not limited to the above configuration, and the reaction tube 203 alone may also be referred to as the processing vessel.

[0013] (Gas Supply Department) Within the processing chamber 201, nozzles 249a and 249b, serving as the first and second supply units, are provided so as to penetrate the side walls of the manifold 209, respectively. Nozzles 249a and 249b are also referred to as the first and second nozzles, respectively. Nozzles 249a and 249b are made of a heat-resistant material such as quartz or SiC. Gas supply pipes 232a and 232b are connected to nozzles 249a and 249b, respectively. Thus, the processing vessel is equipped with two nozzles 249a and 249b and two gas supply pipes 232a and 232b, making it possible to supply multiple types of gas into the processing chamber 201. Note that if only the reaction tube 203 is used as the processing vessel, the nozzles 249a and 249b may be provided so as to penetrate the side walls of the reaction tube 203.

[0014] Gas supply pipes 232a and 232b are equipped with, in order from the upstream side of the gas flow, mass flow controllers (MFCs) 241a and 241b, which are flow control devices (flow control units), and valves 243a and 243b, which are on-off valves. Downstream of valves 243a and 243b on gas supply pipes 232a and 232b, gas supply pipes 232c and 232d, which supply inert gas, are connected, respectively. Gas supply pipes 232c and 232d are equipped with, in order from the upstream side, MFCs 241c and 241d, and valves 243c and 243d, respectively.

[0015] As shown in Figures 1 and 2, nozzles 249a and 249b are provided in an annular space in plan view between the inner wall of the reaction tube 203 and the wafer 200, extending upward in the direction of wafer 200 stacking, along the upper part of the inner wall of the reaction tube 203 from the lower part. That is, nozzles 249a and 249b are provided perpendicular to the surface (flat surface) of each wafer 200 that has been brought into the processing chamber 201, on the side of the edge (periphery) of the wafer 200. Gas supply holes 250a and 250b are provided on the sides of nozzles 249a and 249b, respectively, for supplying gas. Gas supply hole 250a opens towards the center of the reaction tube 203, making it possible to supply gas to the wafer 200. Multiple gas supply holes 250a and 250b are provided, extending from the lower to the upper part of the reaction tube 203.

[0016] Thus, in this embodiment, the gas is transported through the nozzles 249a and 249b arranged in the vertically long annular space defined by the inner wall of the side wall of the reaction tube 203 and the ends (peripheral portions) of the plurality of wafers 200 arranged in the reaction tube 203, that is, in the cylindrical space. Then, the gas is ejected into the reaction tube 203 for the first time in the vicinity of the wafer 200 from the gas supply holes 250a and 250b opened in the nozzles 249a and 249b, respectively. And the main flow of the gas in the reaction tube 203 is in the direction parallel to the surface of the wafer 200, that is, the horizontal direction. By adopting such a configuration, the gas can be uniformly supplied to each wafer 200, and the uniformity of the film thickness of the film formed on each wafer 200 can be improved. The gas flowing on the surface of the wafer 200, that is, the residual gas after the reaction, flows toward the exhaust port, that is, the direction of the exhaust pipe 231 described later. However, the direction of the flow of this residual gas is appropriately specified according to the position of the exhaust port and is not limited to the vertical direction.

[0017] From the gas supply pipe 232a, the raw material (raw material gas) is supplied into the processing chamber 201 through the MFC241a, the valve 243a, and the nozzle 249a.

[0018] From the gas supply pipe 232b, for example, an oxygen (O)-containing gas as a reactant (reaction gas) is supplied into the processing chamber 201 through the MFC241b, the valve 243b, and the nozzle 249b.

[0019] From the gas supply pipes 232c and 232d, the inert gas is supplied into the processing chamber 201 through the MFC241c, 241d, the valves 243c, 243d, and the nozzles 249a, 249b, respectively.

[0020] The raw material supply system, which serves as the first gas supply system, is mainly composed of gas supply pipes 232a, MFC 241a, and valve 243a. The reactant supply system (reaction gas supply system), which serves as the second gas supply system, is mainly composed of gas supply pipes 232b, MFC 241b, and valve 243b. The inert gas supply system is mainly composed of gas supply pipes 232c, 232d, MFC 241c, 241d, and valves 243c, 243d. The raw material supply system, reactant supply system, and inert gas supply system are also simply referred to as the gas supply system (gas supply section).

[0021] (Substrate support) As shown in Figure 1, the boat 217, which serves as a substrate support, is configured to support multiple wafers 200, for example 25 to 200 wafers 200, in a horizontal position and aligned vertically with their centers aligned, in multiple layers, that is, arranged with spacing between them. The boat 217 is made of a heat-resistant material such as quartz or SiC. At the bottom of the boat 217, multiple layers of heat-insulating plates 218, made of a heat-resistant material such as quartz or SiC, are supported. This configuration makes it difficult for heat from the heater 207 to be transferred to the seal cap 219 side. However, this embodiment is not limited to this configuration. For example, instead of providing heat-insulating plates 218 at the bottom of the boat 217, a heat-insulating cylinder, which is a cylindrical member made of a heat-resistant material such as quartz or SiC, may be provided.

[0022] (Plasma generation section) Next, the plasma generation section will be explained using Figures 1 to 5.

[0023] An electrode 300 for plasma generation is provided outside the reaction tube 203, that is, outside the processing vessel (processing chamber 201). By applying power to the electrode 300, it is possible to excite the gas inside the reaction tube 203, that is, inside the processing vessel (processing chamber 201), in other words, to excite the gas into a plasma state. Hereinafter, by simply applying power to excite the gas into a plasma state, the system is configured to generate capacitively coupled plasma (CCP) inside the reaction tube 203, that is, inside the processing vessel (processing chamber 201).

[0024] Specifically, as shown in Figure 2, an electrode 300 and an electrode fixing device 301 for fixing the electrode 300 are arranged between the heater 207 and the reaction tube 203. The electrode fixing device 301 is arranged inside the heater 207, the electrode 300 is arranged inside the electrode fixing device 301, and the reaction tube 203 is arranged inside the electrode 300.

[0025] Furthermore, as shown in Figures 1 and 2, the electrode 300 and electrode holder 301 are provided in an annular space in plan view between the inner wall of the heater 207 and the outer wall of the reaction tube 203, extending along the upper part of the outer wall of the reaction tube 203 from the lower part, in the direction of wafer 200 arrangement. The electrode 300 is provided parallel to the nozzles 249a and 249b. In plan view, the electrode 300 and electrode holder 301 are arranged and positioned concentrically with the reaction tube 203 and the heater 207, and not in contact with the heater 207. The electrode holder 301 is made of an insulating material (insulator) and is provided to cover at least a part of the electrode 300 and the reaction tube 203; therefore, the electrode holder 301 can also be referred to as a cover (quartz cover, insulating wall, insulating plate), or a cross-sectional arc cover (cross-sectional arc body, cross-sectional arc wall).

[0026] As shown in Figure 2, multiple electrodes 300 are provided, and these multiple electrodes 300 are fixed to the inner wall of the electrode fixing device 301. More specifically, as shown in Figure 5, the inner wall surface of the electrode fixing device 301 is provided with projections (hooks) 310 on which the electrodes 300 can be hooked, and the electrodes 300 are provided with openings 305, which are through holes through which the projections 310 can be inserted. By hooking the electrodes 300 onto the projections 310 provided on the inner wall surface of the electrode fixing device 301 via the openings 305, the electrodes 300 can be fixed to the electrode fixing device 301. Note that Figures 3 and 4 show an example in which two openings 305 are provided for one electrode 300, and one electrode 300 is fixed by hooking onto two projections 310, that is, an example in which one electrode is fixed in two places. Figure 2 shows an example of a configuration (unit) in which nine electrodes 300 are fixed to one electrode holder 301, and this configuration (unit) consists of two sets, with three electrodes 300-1, three electrodes 300-2, and three electrodes 300-0 fixed to one electrode holder 301.

[0027] Electrodes 300 (Type 1 electrode 300-1, Type 2 electrode 300-2, Type 3 electrode 300-3, Type 0 electrode 300-0) are made of oxidation-resistant materials such as nickel (Ni). While electrodes 300 can also be made of metallic materials such as SUS, aluminum (Al), and copper (Cu), using oxidation-resistant materials such as Ni suppresses the deterioration of electrical conductivity and thus reduces the decrease in plasma generation efficiency. Furthermore, electrodes 300 can also be made of a Ni alloy material with added Al. In this case, an aluminum oxide film (AlO film), which has high heat resistance and corrosion resistance, can be formed on the outermost surface of the electrode 300. The AlO film formed on the outermost surface of the electrode 300 acts as a protective film (block film, barrier film), suppressing the progression of deterioration inside the electrode 300. This further suppresses the decrease in plasma generation efficiency due to a decrease in the electrical conductivity of the electrode 300. The electrode holder 301 is made of an insulating material (insulator), such as a heat-resistant material like quartz or SiC. Preferably, the material of the electrode holder 301 is the same as the material of the reaction tube 203.

[0028] As shown in Figures 3(a), 3(b), 4(a), and 4(b), the electrode 300 includes a first-type electrode 300-1, a second-type electrode 300-2, a third-type electrode 300-3, and a zero-type electrode 300-0. The first-type electrode 300-1, the second-type electrode 300-2, and the third-type electrode 300-3 are connected to a high-frequency power supply (RF power supply) 320 via a matching circuit 325, and an arbitrary potential is applied to them. The zero-type electrode 300-0 is grounded and has a reference potential (0V). The first-type electrode 300-1, the second-type electrode 300-2, and the third-type electrode 300-3 are also referred to as Hot electrodes or HOT electrodes, and the zero-type electrode 300-0 is also referred to as Ground electrode or GND electrode. The first type electrode 300-1, the second type electrode 300-2, the third type electrode 300-3, and the zero type electrode 300-0 are each configured as plate-shaped members when viewed from the front. Figures 2 and 3 show examples where multiple first type electrodes 300-1, second type electrodes 300-2, and zero type electrodes 300-0 are provided, resulting in four first type electrodes 300-1, four second type electrodes 300-2, and four zero type electrodes 300-0, respectively (Figures 3(a) and 3(b)). Figures 4(a) and 4(b) show examples where multiple third type electrodes 300-3 are provided, resulting in four first type electrodes 300-1, two second type electrodes 300-2, two third type electrodes 300-3, and four zero type electrodes 300-0. By applying RF power from the RF power supply 320 via the matching unit 325 between the first electrode 300-1 and the zero electrode 300-0, plasma is generated in the region between the first electrode 300-1 and the zero electrode 300-0. Similarly, by applying RF power between the second electrode 300-2 and the zero electrode 300-0, plasma is generated in the region between the second electrode 300-2 and the zero electrode 300-0. By applying RF power between the third electrode 300-3 and the zero electrode 300-0, plasma is generated in the region between the third electrode 300-3 and the zero electrode 300-0. These regions are also referred to as plasma generation regions.As shown in Figure 1, the electrodes 300 are arranged perpendicular to the processing container (vertical direction, the direction in which the substrates are stacked), and as shown in Figures 2 to 4, they are arranged in an arc shape in a plan view and at equal intervals, that is, the distance (gap) between adjacent electrodes 300 (Type 1 electrode 300-1, Type 2 electrode 300-2, Type 3 electrode 300-3, Type 0 electrode 300-0) is equal. Furthermore, the electrodes 300 are arranged between the reaction tube 203 and the heater 207, in a roughly arc shape in a plan view along the outer wall of the reaction tube 203, and are fixed to the inner wall surface of an electrode fixing device 301 that is formed in an arc shape with a central angle of 30 degrees or more and 240 degrees or less. Also, as described above, the electrodes 300 are provided parallel to the nozzles 249a and 249b.

[0029] Here, the electrode fixing device 301 and the electrodes 300 (Type 1 electrode 300-1, Type 2 electrode 300-2, Type 3 electrode 300-3, Type 0 electrode 300-0) can also be referred to as an electrode unit. It is preferable that the electrode units be positioned to avoid the nozzles 249a, 249b and the exhaust pipe 231, as shown in Figure 2. Figure 2 shows an example in which two electrode units are positioned opposite each other across the center of the wafer 200 (reaction tube 203), avoiding the nozzles 249a, 249b and the exhaust pipe 231. Note that Figure 2 also shows an example in which the two electrode units are positioned symmetrically with respect to the line L as the axis of symmetry in a plan view. By arranging the electrode unit in this manner, the nozzles 249a and 249b, the temperature sensor 263, and the exhaust pipe 231 can be positioned outside the plasma generation area within the processing chamber 201, thereby suppressing plasma damage to these components, wear and tear on these components, breakage of these components, and generation of particles from these components. In this disclosure, unless otherwise specified, the components will be described as electrodes 300.

[0030] Electrode 300 receives a high frequency input from the high-frequency power supply 320 via a matching circuit 325, for example, between 25 MHz and 35 MHz, more specifically, with a frequency of 27.12 MHz, which generates plasma (active species) 302 in the reaction tube 203. This generated plasma makes it possible to supply plasma 302 for substrate processing to the surface of the wafer 200 from around the wafer 200. The electrode 300 is configured to be powered from the lower side (bottom end).

[0031] Primarily, the plasma generation unit (plasma excitation unit, plasma activation mechanism) that excites (activates) the gas into a plasma state is composed of electrodes 300, namely, a first-type electrode 300-1, a second-type electrode 300-2, a third-type electrode 300-3, and a zero-type electrode 300-0. The electrode fixing device 301, matching unit 325, and RF power supply 320 may also be considered as part of the plasma generation unit.

[0032] Furthermore, as shown in Figure 5(a), the electrode 300 has an opening 305 formed therein, which consists of a circular notch 303 through which the projection head 311 (described later) passes, and a sliding notch 304 through which the projection shaft 312 slides.

[0033] The electrode 300 is preferably constructed with a thickness of 0.1 mm or more and 1 mm or less, and a width of 5 mm or more and 30 mm or less, so as to have sufficient strength and not significantly reduce the efficiency of wafer heating by the heat source. It is also preferable to have a bending structure as a deformation suppression part to prevent deformation due to heating by the heater 207. In this case, since the electrode 300 is placed between the quartz reaction tube 203 and the heater 207, a bending angle of 90° to 175° is appropriate due to space constraints. The electrode surface has a coating formed by thermal oxidation, and since this coating may peel off due to thermal stress and generate particles, care must be taken not to bend it too much.

[0034] In a vertical substrate processing apparatus, the frequency of the high-frequency power supply 320 is set to 27.12 MHz, and an electrode 300 with a length of 1 m and a thickness of 1 mm is used to generate plasma in CCP mode.

[0035] If the loading range of the wafer 200 onto the boat 217 is set to 8% or more of the output wavelength of the high-frequency power supply 320, the biased voltage distribution of the standing wave (cosine curve) formed by the superposition of traveling and reflected waves in the longitudinal direction of the electrode 300 will affect the density distribution of the plasma 302, resulting in a bias. Consequently, non-uniformity will appear between wafers 200 in terms of film thickness and film quality, which are correlated with the density distribution of the plasma 302.

[0036] One approach to solving this problem is to change the phase difference between the traveling wave and the reflected wave by adjusting the length of the tip of the electrode 300, thereby shifting the voltage distribution of the standing wave in the wafer region downwards. By using this method, it is possible to improve the bias in the voltage distribution, ensure a good uniform density distribution of the plasma 302, and improve the uniformity of the film thickness and film quality between the wafers 200.

[0037] For example, as shown in Figures 3(a) and 3(b), four Type 1 electrodes 300-1, each 12.5 mm wide and 1650 mm high, four Type 2 electrodes 300-2, each 12.5 mm wide and 1200 mm high, and four Type 0 electrodes 300-0, each 12.5 mm wide and 1650 mm high are arranged alternately on the outer wall of the tubular reaction tube 203 in the order of Type 1 electrode 300-1, Type 2 electrode 300-2, Type 0 electrode 300-0, Type 1 electrode 300-1, Type 2 electrode 300-2, Type 0 electrode 300-0, ... Furthermore, the gaps between the Type 1 electrode 300-1 and the Type 2 electrode 300-2, the gap between the Type 2 electrode 300-2 and the Type 0 electrode 300-0, and the gap between the Type 0 electrode 300-0 and the Type 1 electrode 300-1 are all set to 7.5 mm.

[0038] As shown in Figures 4(a) and 4(b), four Type 1 electrodes 300-1, each 12.5 mm wide and 1650 mm high, two Type 2 electrodes 300-2, each 12.5 mm wide and 1350 mm high, two Type 3 electrodes 300-3, each 12.5 mm wide and 1050 mm high, and four Type 0 electrodes 300-0, each 12.5 mm wide and 1650 mm high, are arranged alternately on the outer wall of the tubular reaction tube 203 in the order of Type 1 electrode 300-1, Type 2 electrode 300-2, Type 0 electrode 300-0, Type 1 electrode 300-1, Type 3 electrode 300-3, Type 0 electrode 300-0, Type 1 electrode 300-1, Type 2 electrode 300-2, Type 0 electrode 300-0, ... Furthermore, the gaps between the Type 1 electrode 300-1 and the Type 2 electrode 300-2, the gap between the Type 2 electrode 300-2 and the Type 0 electrode 300-0, the gap between the Type 0 electrode 300-0 and the Type 1 electrode 300-1, the gap between the Type 1 electrode 300-1 and the Type 3 electrode 300-3, and the gap between the Type 3 electrode 300-3 and the Type 0 electrode 300-0 are all set to 7.5 mm.

[0039] In all of Figures 3(a), 3(b) and 4(a), 4(b), the tip positions of the upper part of the electrodes 300 are such that the first type electrode 300-1 is at the same or lower position than the zero type electrode 300-0, and the second type electrode 300-2 and the third type electrode 300-3 are at a lower position than both the first type electrode 300-1 and the zero type electrode 300-0. More preferably, when the loading range of the wafer 200 onto the boat 217 is configured at 12% of the output wavelength of the high-frequency power supply 320, it is appropriate to configure the tips of the second type electrode 300-2 and the third type electrode 300-3 at a position 0.5 to 6% (0.5% to 6%) lower than the output wavelength of the high-frequency power supply 320 from the uppermost wafer position, and to configure the tip of the zero type electrode 300-0 at the same or higher position than the uppermost wafer position. Furthermore, if the tips of both the Type 2 electrode 300-2 and the Type 3 electrode 300-3 are located at the uppermost wafer position, or if either the Type 2 electrode 300-2 or the Type 3 electrode 300-3 is located at a position lower than 6% from the uppermost wafer position relative to the output wavelength of the high-frequency power supply 320, the voltage distribution of the electrode 300 will be significantly biased, making it difficult to ensure uniformity of the density distribution of the plasma 302.

[0040] Here, using the first type electrode 300-1, second type electrode 300-2, and zero type electrode 300-0 shown in Figure 3(a), and the first type electrode 300-1, second type electrode 300-2, third type electrode 300-3, and zero type electrode 300-0 shown in Figure 4(a), as examples, we can summarize the following. Each electrode is assumed to be configured as follows.

[0041] In Figure 3(a), the three electrodes arranged from right to left (Type 1 electrode 300-1, Type 2 electrode 300-2, and Type 0 electrode 300-0) are designated as the first electrode group. The first electrode group is arranged in a repeating manner. Within the first electrode group, Type 1 electrode 300-1, Type 2 electrode 300-2, and Type 0 electrode 300-0 are designated as the first electrode, second electrode, and third electrode, respectively.

[0042] In Figure 4(a), the three electrodes arranged from the right (Type 1 electrode 300-1, Type 2 electrode 300-2, and Type 0 electrode 300-0) are designated as the first electrode group, and the three electrodes further arranged to the left of the first electrode group (Type 1 electrode 300-1, Type 3 electrode 300-3, and Type 0 electrode 300-0) are designated as the second electrode group. The first and second electrode groups are arranged alternately. In the first electrode group, Type 1 electrode 300-1, Type 2 electrode 300-2, and Type 0 electrode 300-0 are designated as the first, second, and third electrodes, respectively. In the second electrode group, Type 1 electrode 300-1, Type 3 electrode 300-3, and Type 0 electrode 300-0 are designated as the fourth, fifth, and sixth electrodes, respectively.

[0043] In the above configuration of the first to sixth electrodes, the following configuration is preferred.

[0044] 1) The second electrode is shorter in length than the first electrode. 2) The fifth electrode is shorter in length than the fourth electrode. 3) The fifth electrode is shorter in length than the second electrode. 4) The second electrode is shorter in length than the third electrode. 5) The fifth electrode is shorter in length than the sixth electrode.

[0045] 6) The first electrode and the fourth electrode are of the same length. 7) The third electrode and the sixth electrode are of the same length. 8) The first electrode and the third electrode are of the same length. 9) The fourth electrode and the sixth electrode are of the same length. 10) The second and fourth electrodes, which are positioned adjacent to the third electrode, have different lengths.

[0046] 11) The first, second, and third electrodes are arranged in the order of first electrode, second electrode, and third electrode. Also, the fourth, fifth, and sixth electrodes are arranged in the order of fourth electrode, fifth electrode, and sixth electrode. 12) The first, second, and third electrodes are arranged at equal intervals. The fourth, fifth, and sixth electrodes are also arranged at equal intervals. 13) The distance between the centers of the first electrode and the second electrode, the distance between the centers of the second electrode and the third electrode, the distance between the centers of the fourth electrode and the fifth electrode, and the distance between the centers of the fifth electrode and the sixth electrode shall be between 13.0 mm and 53.5 mm. 14) The first electrode, second electrode, third electrode, fourth electrode, fifth electrode, and sixth electrode are arranged in the direction in which the multiple substrates 200 are stacked and held (perpendicular to the processing chamber 201). 15) The tip of the second electrode is positioned lower than the tip of the first electrode.

[0047] 16) The tip of the fifth electrode is positioned lower than the tip of the fourth electrode. 17) The tip of the fifth electrode is positioned lower than the tip of the second electrode. 18) The tip of the second electrode is positioned lower than the tip of the third electrode. 19) The tip of the fifth electrode is positioned lower than the tip of the sixth electrode. 20) The tip of the first electrode and the tip of the fourth electrode are positioned at the same height.

[0048] 21) The tip of the third electrode and the tip of the sixth electrode are positioned at the same height. 22) The tips of the second electrode and the fifth electrode are positioned at a position 0.5% to 6% lower than the output wavelength of the applied high-frequency power supply, relative to the position of the uppermost substrate among the multiple substrates 200 that are stacked and held. 23) The frequency of the high-frequency power supply applied to the first electrode, second electrode, fourth electrode, and fifth electrode shall be between 25 MHz and 35 MHz. 24) The first electrode group and the second electrode group are located outside the processing chamber 201 that processes the substrate 200, and are configured to generate plasma inside the processing chamber 201. 25) The device is equipped with a heating section 207 for heating the substrate 200, and the first electrode group and the second electrode group are provided between the processing chamber 201 and the heating section 207.

[0049] As described above, if the configuration of the electrode 300 is appropriate, the electric field generated between the inner wall of the reaction tube 203 near the electrode 300 and the wafer 200 is uniformly and strongly distributed, resulting in a high and uniform density distribution of plasma 302, which simultaneously improves the efficiency, quality, and uniformity of the substrate processing. Furthermore, if the tips of the second type electrode 300-2 and the third type electrode 300-3 are configured at a position 1.5 to 4.5% lower from the uppermost wafer position relative to the output wavelength of the high-frequency power supply 320, it becomes possible to simultaneously achieve even higher efficiency, quality, and uniformity.

[0050] Here, it is preferable to control the furnace pressure during substrate processing within a range of 10 Pa or more and 300 Pa or less. This is because if the furnace pressure is lower than 10 Pa, the mean free path of the gas molecules becomes longer than the Debye length of the plasma, and the plasma that directly strikes the furnace wall becomes more pronounced, making it difficult to suppress particle generation. Also, if the furnace pressure is higher than 300 Pa, the plasma generation efficiency saturates, so even if reaction gas is supplied, the amount of plasma generated does not change, resulting in the wasteful consumption of reaction gas. At the same time, the mean free path of the gas molecules becomes shorter, which reduces the efficiency of transporting plasma active species to the wafer.

[0051] (Electrode fixing jig) Next, the electrode fixing device 301, which serves as an electrode fixing jig for fixing the electrode 300, will be explained using Figures 3 and 5. As shown in Figures 3(a) and 5(a) and 5(b), the multiple electrodes 300 are fixed by hooking their openings 305 onto projections 310 provided on the inner wall surface of the curved electrode fixing device 301, sliding them into place, and then unitizing them together with the electrode fixing device 301 to form a hook-type electrode unit which is installed on the outer circumference of the reaction tube 203. Quartz and nickel alloy are used as the materials for the electrode fixing device 301 and the electrode 300, respectively.

[0052] The electrode holder 301 is preferably configured to have a thickness of 1 mm or more and 5 mm or less, so as to have sufficient strength and not significantly reduce the efficiency of wafer heating by the heater 207. If the thickness of the electrode holder 301 is less than 1 mm, it will not be able to obtain the required strength against its own weight and temperature changes, and if it is made larger than 5 mm, it will absorb the thermal energy radiated from the heater 207, making it impossible to properly heat-treat the wafer 200.

[0053] Furthermore, the electrode fixing device 301 has multiple rivet-shaped protrusions 310 on the inner wall surface facing the reaction tube, which serve as fixing parts for securing the electrode 300. Each protrusion 310 consists of a head portion 311 and a shaft portion 312. The maximum width of the head portion 311 is smaller than the diameter of the circular notch 303 in the opening 305 of the electrode 300, and the maximum width of the shaft portion 312 is smaller than the width of the slide notch 304. The opening 305 of the electrode 300 is shaped like a keyhole, and this slide notch 304 can guide the shaft portion 312 when it slides, and the head portion 311 is designed so that it cannot be removed by sliding the head portion 311. In other words, the electrode fixing jig has a fixing part equipped with a projection head 311, which is a tip portion that prevents the electrode 300 from coming loose from the projection shaft portion 312, which is a columnar portion into which the electrode 300 is locked. It should be noted that the shape of the opening 305 and the projection head 311 are not limited to the shapes shown in Figures 3 and 5, as long as the electrode 300 can be locked into the electrode fixing device 301. For example, the projection head 311 may have a convex shape such as a hammer or a spike.

[0054] To maintain a constant distance between the electrode holder 301 or reaction tube 203 and the electrode 300, an elastic body such as a spacer or spring may be provided between the two on the electrode holder 301 or the electrode 300, or these may be integrated into a single structure with the electrode holder 301 or the electrode 300. In this embodiment, the spacer 330 shown in Figure 5(b) is integrated into the electrode holder 301. Having multiple spacers 330 for a single electrode is more effective in maintaining a constant distance between them for fixation.

[0055] To obtain high substrate processing capacity at substrate temperatures of 500°C or below, it is desirable to have the electrode fixing device 301 occupy a roughly arc shape with a central angle of 30° to 240°, and to avoid the generation of particles by arranging it to avoid the exhaust pipe 231, which is the exhaust port, and the nozzles 249a and 249b. In other words, the electrode fixing device 301 is arranged on the outer circumference of the reaction tube 203, excluding the locations where the nozzles 249a and 249b, which are the gas supply parts, and the exhaust pipe 231, which is the gas exhaust part, are installed. In this embodiment, two electrode fixing devices 301 with a central angle of 110° are installed symmetrically on the left and right sides.

[0056] (Spacer) Next, Figures 5(a) and (b) show spacers 330 for fixing the electrode 300 at a certain distance from the electrode fixing jig, the electrode fixing fixture 301, and the outer wall of the reaction tube 203. For example, the spacer 330 is made of cylindrical quartz material and is integrated with the electrode fixing fixture 301, and the electrode 300 is fixed to the electrode fixing fixture 301 by contacting the spacer 330. The spacer 330 can take any form and may be integrated with either the electrode 300 or the electrode fixing fixture 301, as long as it can fix the electrode 300 at a certain distance from the electrode fixing fixture 301 or the reaction tube 203. For example, the spacer 330 may be made of semi-cylindrical quartz material and integrated with the electrode fixing fixture 301 to fix the electrode 300, or the spacer 330 may be made of a metal plate material such as SUS and integrated with the electrode to fix the electrode 300. In any case, since the projection 310 and spacer are provided, the positioning of the electrode 300 becomes easier, and if the electrode 300 deteriorates, only the electrode 300 can be replaced, thus reducing costs. Here, the spacer 330 may be included in the electrode unit described above.

[0057] (Exhaust section) As shown in Figure 1, the reaction tube 203 is provided with an exhaust pipe 231 for exhausting the atmosphere inside the processing chamber 201. A vacuum pump 246, which serves as a vacuum evacuation device, is connected to the exhaust pipe 231 via a pressure sensor 245, which acts as a pressure detector (pressure detection unit) for detecting the pressure inside the processing chamber 201, and an APC (Auto Pressure Controller) valve 244, which acts as an exhaust valve (pressure adjustment unit). The APC valve 244 is configured to allow vacuum evacuation and stopping of vacuum evacuation inside the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is operating, and further, to allow adjustment of the pressure inside the processing chamber 201 by adjusting the valve opening based on the pressure information detected by the pressure sensor 245 while the vacuum pump 246 is operating. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 may also be considered as part of the exhaust system. The exhaust pipe 231 is not limited to being installed in the reaction tube 203; it may also be installed in the manifold 209, similar to the nozzles 249a and 249b.

[0058] (Peripheral devices) Below the manifold 209, a seal cap 219 is provided, which serves as a furnace opening cover capable of airtightly closing the lower end opening of the manifold 209. The seal cap 219 is configured to abut the lower end of the manifold 209 from the vertically downward side. The seal cap 219 is made of a metal such as SUS and is formed in a disc shape. An O-ring 220b is provided on the upper surface of the seal cap 219, which serves as a sealing member that abuts the lower end of the manifold 209.

[0059] On the side of the seal cap 219 opposite the processing chamber 201, a rotating mechanism 267 for rotating the boat 217 is installed. The rotating shaft 255 of the rotating mechanism 267 passes through the seal cap 219 and is connected to the boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be raised and lowered vertically by a boat elevator 115, which is installed vertically outside the reaction tube 203 as a lifting mechanism. The boat elevator 115 is configured to move the boat 217 in and out of the processing chamber 201 by raising and lowering the seal cap 219.

[0060] The boat elevator 115 is configured as a transport device (transport mechanism) for transporting the boat 217, i.e., the wafer 200, to and from the processing chamber 201. Below the manifold 209, a shutter 219s is provided as a furnace opening cover that can airtightly close the lower end opening of the manifold 209 while the seal cap 219 is being lowered by the boat elevator 115. The shutter 219s is made of a metal such as SUS and is formed in a disc shape. An O-ring 220c is provided on the upper surface of the shutter 219s as a sealing member that contacts the lower end of the manifold 209. The opening and closing operation of the shutter 219s (lifting and lowering operation, rotation operation, etc.) is controlled by the shutter opening and closing mechanism 115s.

[0061] A temperature sensor 263 is installed inside the reaction tube 203 as a temperature detector. By adjusting the amount of power supplied to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature inside the processing chamber 201 is adjusted to the desired temperature distribution. The temperature sensor 263 is installed along the inner wall of the reaction tube 203, similar to the nozzles 249a and 249b.

[0062] (Control device) Next, the control unit will be explained using Figure 6. As shown in Figure 6, the controller 121, which is the control unit (control device), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, configured as, for example, a touch panel, is connected to the controller 121.

[0063] The storage device 121c is composed of, for example, flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. The storage device 121c contains, in a readable format, control programs that control the operation of the substrate processing device, and process recipes that describe the procedures and conditions for the film deposition process described later. The process recipe functions as a program, combining the procedures for each of the various processes (film deposition process) described later, so that the controller 121 can cause the substrate processing device to execute them and obtain a predetermined result. Hereinafter, process recipes and control programs will be collectively referred to simply as "programs." Similarly, process recipes will be referred to simply as "recipes." In this specification, the term "program" may include only recipes, only control programs, or both. RAM 121b is configured as a memory area (work area) where programs and data read by the CPU 121a are temporarily held.

[0064] I / O port 121d is connected to the MFCs 241a to 241d, valves 243a to 243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, rotary mechanism 267, boat elevator 115, shutter opening / closing mechanism 115s, high-frequency power supply 320, etc.

[0065] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c in response to input of operation commands from the input / output device 122. The CPU 121a is configured to control the rotation mechanism 267, the flow rate adjustment operation of various gases by the MFCs 241a to 241d, the opening and closing operation of valves 243a to 243d, the opening and closing operation of the APC valve 244 and the pressure adjustment operation of the APC valve 244 based on the pressure sensor 245, the starting and stopping of the vacuum pump 246, the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the forward and reverse rotation of the boat 217 by the rotation mechanism 267, the rotation angle and rotation speed adjustment operation, the raising and lowering operation of the boat 217 by the boat elevator 115, the opening and closing operation of the shutter 219s by the shutter opening and closing mechanism 115s, and the power supply of the high-frequency power supply 320, etc., in accordance with the contents of the read recipe.

[0066] The controller 121 can be configured by installing the above-mentioned program, stored in an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory) 123, onto a computer. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this specification, the term recording media may include only the storage device 121c, only the external storage device 123, or both. Note that the program may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 123.

[0067] (2) Substrate processing process Using the substrate processing apparatus described above, an example of a process for forming a film on a substrate as one step in the manufacturing process of a semiconductor device will be explained with reference to Figure 7. In the following explanation, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121.

[0068] In this specification, the film deposition sequence shown in Figure 7 may also be shown as follows for convenience. The same notation will be used in the following descriptions of modifications and other embodiments.

[0069] (raw material gas → reaction gas) × n In this specification, the term "wafer" may refer to the wafer itself or to a laminate consisting of a wafer and a predetermined layer or film formed on its surface. In this specification, the term "wafer surface" may refer to the surface of the wafer itself or to the surface of a specific layer or film formed on the wafer. Similarly, the term "substrate" is used in this specification with the same meaning as the term "wafer."

[0070] (Loading step: S1) When multiple wafers 200 are loaded into the boat 217 (wafer charging), the shutter 219s is moved by the shutter opening / closing mechanism 115s, opening the lower end opening of the manifold 209 (shutter opening). Then, as shown in Figure 1, the boat 217 supporting the multiple wafers 200 is lifted by the boat elevator 115 and transported into the processing chamber 201 (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

[0071] (Pressure and temperature adjustment step: S2) The processing chamber 201 is evacuated (reduced pressure exhausted) by the vacuum pump 246 so that the inside reaches the desired pressure (vacuum level). At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback controlled (pressure adjustment) based on this measured pressure information. The vacuum pump 246 is kept running continuously, at least until the film deposition step described later is completed.

[0072] Furthermore, the processing chamber 201 is heated by the heater 207 to reach a desired temperature. At this time, the amount of power supplied to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 to ensure that the processing chamber 201 has a desired temperature distribution (temperature adjustment). Heating of the processing chamber 201 by the heater 207 is continued at least until the film deposition step described later is completed. However, if the film deposition step is performed under temperature conditions below room temperature, heating of the processing chamber 201 by the heater 207 is not required. In addition, if processing is performed only at such temperatures, the heater 207 is not necessary, and it does not need to be installed in the substrate processing apparatus. In this case, the configuration of the substrate processing apparatus can be simplified.

[0073] Next, the rotation of the boat 217 and wafer 200 by the rotating mechanism 267 is started. The rotation of the boat 217 and wafer 200 by the rotating mechanism 267 continues at least until the film deposition step described later is completed.

[0074] (Film deposition steps: S3, S4, S5, S6) Subsequently, the film deposition step is performed by sequentially executing steps S3, S4, S5, and S6.

[0075] (Raw material gas supply step: S3, S4) In step S3, a raw material gas is supplied to the wafer 200 in the processing chamber 201.

[0076] Valve 243a is opened to allow the raw material gas to flow into the gas supply pipe 232a. The raw material gas flow rate is regulated by MFC 241a and supplied to the processing chamber 201 through the gas supply hole 250a via nozzle 249a, and exhausted through exhaust pipe 231. At this time, the raw material gas is supplied to the wafer 200. At the same time, valve 243c may be opened to allow inert gas to flow into the gas supply pipe 232c. The inert gas flow rate is regulated by MFC 241c and supplied to the processing chamber 201 together with the raw material gas, and exhausted through exhaust pipe 231.

[0077] Furthermore, to prevent raw material gas from entering the nozzle 249b, valve 243d may be opened to allow inert gas to flow into the gas supply pipe 232d. The inert gas is supplied into the processing chamber 201 via the gas supply pipe 232d and nozzle 249b, and exhausted through the exhaust pipe 231.

[0078] The processing conditions in this step are: Processing temperature: Room temperature (25°C) to 550°C, preferably 400 to 500°C Processing pressure: 1 to 4000 Pa, preferably 100 to 1000 Pa Raw material gas supply flow rate: 0.1~3 slm Raw material gas supply time: 1 to 100 seconds, preferably 1 to 50 seconds Inert gas supply flow rate (per gas supply pipe): 0-10 slm Examples are given.

[0079] In this specification, numerical ranges such as "25~550°C" mean that the lower and upper limits are included within that range. For example, "25~550°C" means "25°C or more and 550°C or less." The same applies to other numerical ranges. In this specification, processing temperature refers to the temperature of the wafer 200 or the temperature inside the processing chamber 201, and processing pressure refers to the pressure inside the processing chamber 201. Also, gas supply flow rate: 0 slm means the case in which the gas is not supplied. These also apply in the following explanations.

[0080] Under the conditions described above, a first layer is formed on the wafer 200 (the underlying film on the surface) by supplying the raw material gas to the wafer 200. For example, if a silicon (Si)-containing gas, as described later, is used as the raw material gas, a Si-containing layer is formed as the first layer.

[0081] After the first layer is formed, valve 243a is closed to stop the supply of raw material gas into the processing chamber 201. At this time, APC valve 244 is left open, and the processing chamber 201 is evacuated using vacuum pump 246 to remove any unreacted raw material gas or reaction by-products that have contributed to the formation of the first layer remaining in the processing chamber 201 (S4). Valves 243c and 243d are also opened to supply inert gas into the processing chamber 201. The inert gas acts as a purge gas.

[0082] For example, aminosilane gases such as tetrakis(dimethylamino)silane (Si[N(CH3)2]4, abbreviated as 4DMAS) gas, tris(dimethylamino)silane (Si[N(CH3)2]3H, abbreviated as 3DMAS) gas, bis(dimethylamino)silane (Si[N(CH3)2]2H2, abbreviated as BDMAS) gas, bisdi(ethylamino)silane (Si[N(C2H5)2]2H2, abbreviated as BDEAS) gas, bis(tert-butyl)aminosilane (SiH2[NH(C4H9)]2, abbreviated as BTBAS) gas, and (diisopropylamino)silane (SiH3[N(C3H7)2], abbreviated as DIPAS) gas can be used as raw material gases, and one or more of these can be used as raw material gases.

[0083] Furthermore, as raw materials, for example, chlorosilane gases such as monochlorosilane (SiH3Cl, abbreviated as MCS) gas, dichlorosilane (SiH2Cl2, abbreviated as DCS) gas, trichlorosilane (SiHCl3, abbreviated as TCS) gas, tetrachlorosilane (SiCl4, abbreviated as STC) gas, hexachlorodisilane (Si2Cl6, abbreviated as HCDS) gas, and octachlorotrisilane (Si3Cl8, abbreviated as OCTS) gas can also be used; fluorosilane gases such as tetrafluorosilane (SiF4) gas and difluorosilane (SiH2F2) gas; bromosilane gases such as tetrabromosilane (SiBr4) gas and dibromosilane (SiH2Br2) gas; and iodosilane gases such as tetraiodosilane (SiI4) gas and diiodosilane (SiH2I2) gas can also be used. In other words, halosilane gases can be used as raw material gases. One or more of these can be used as the raw material gas.

[0084] Furthermore, silicon hydride gases such as monosilane (SiH4, abbreviated as MS) gas, disilane (Si2H6, abbreviated as DS) gas, and trisilane (Si3H8, abbreviated as TS) gas can be used as raw material gases. One or more of these can be used as raw material gases.

[0085] As the inert gas, for example, nitrogen (N2) gas, argon (Ar) gas, helium (He) gas, neon (Ne) gas, xenon (Xe) gas, and other noble gases can be used. This also applies to each of the steps described later.

[0086] (Reaction gas supply step: S5, S6) After the film deposition process is completed, a plasma-excited reaction gas is supplied to the wafer 200 in the processing chamber 201 (S5).

[0087] In this step, the opening and closing of valves 243b to 243d is controlled using the same procedure as the opening and closing of valves 243a, 243c, and 243d in step S3. The reaction gas flow rate is adjusted by MFC 241b and supplied into the processing chamber 201 from the gas supply hole 250b via nozzle 249b. At this time, high-frequency power (RF power, frequency 27.12 MHz in this embodiment) is supplied (applied) from the high-frequency power supply 320 to the electrode 300. The reaction gas supplied into the processing chamber 201 is excited into a plasma state inside the processing chamber 201, supplied to the wafer 200 as an active species, and exhausted from the exhaust pipe 231.

[0088] The processing conditions in this step are: Processing temperature: Room temperature (25°C) to 550°C, preferably 400 to 500°C Processing pressure: 1-300 Pa, preferably 10-100 Pa Reaction gas supply flow rate: 0.1~10 slm Reaction gas supply time: 1 to 100 seconds, preferably 1 to 50 seconds Inert gas supply flow rate (per gas supply pipe): 0-10 slm RF power: 50~1000W RF frequency: 27.12MHz Examples are given.

[0089] Under the conditions described above, by supplying a reaction gas to the wafer 200 in an excited plasma state, the first layer formed on the surface of the wafer 200 is modified by the action of ions generated in the plasma and electrically neutral active species, and the first layer is modified into a second layer.

[0090] When an oxidizing gas (oxidizing agent), such as an oxygen (O)-containing gas, is used as the reaction gas, the O-containing gas is excited into a plasma state, generating O-containing active species, which are then supplied to the wafer 200. In this case, the O-containing active species cause an oxidation treatment as a modification treatment to the first layer formed on the surface of the wafer 200. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon oxide layer (SiO layer) as the second layer.

[0091] Furthermore, when a nitriding gas (nitriding agent), such as a nitrogen (N) and hydrogen (H)-containing gas, is used as the reaction gas, the N and H-containing gas is excited into a plasma state, generating N and H-containing active species, which are then supplied to the wafer 200. In this case, the action of the N and H-containing active species causes a nitriding treatment as a modification treatment to be performed on the first layer formed on the surface of the wafer 200. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon nitride layer (SiN layer) as the second layer.

[0092] After the first layer has been modified into the second layer, valve 243b is closed to stop the supply of reaction gas. Furthermore, the supply of RF power to electrode 300 is stopped. Then, using the same processing procedures and conditions as in step S4, any reaction gases and reaction by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (S6).

[0093] As described above, the reaction gas can be, for example, an oxygen-containing gas or a nitrogen- and hydrogen-containing gas. Examples of oxygen-containing gases include oxygen (O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), ozone (O3), hydrogen peroxide (H2O2), water vapor (H2O), ammonium hydroxide (NH4(OH)), carbon monoxide (CO), and carbon dioxide (CO2). Examples of nitrogen- and hydrogen-containing gases include hydrogen nitride-based gases such as ammonia (NH3), diazene (N2H2), hydrazine (N2H4), and N3H8. One or more of these can be used as the reaction gas.

[0094] As the inert gas, for example, the various gases exemplified in step S4 can be used.

[0095] (Performed the prescribed number of times: S7) The above steps S3, S4, S5, and S6 are performed non-simultaneously, i.e., without synchronization, in this order, and one cycle is defined as performing this cycle a predetermined number of times (n times, where n is an integer of 1 or more), i.e., one or more times, to form a film of a predetermined composition and predetermined thickness on the wafer 200. It is preferable to repeat the above cycle multiple times. That is, it is preferable to make the thickness of the first layer formed per cycle smaller than the desired thickness, and to repeat the above cycle multiple times until the thickness of the film formed by stacking the second layer reaches the desired thickness. For example, if a Si-containing layer is formed as the first layer and an SiO layer is formed as the second layer, a silicon oxide film (SiO film) will be formed as the film. Also, if a Si-containing layer is formed as the first layer and a SiN layer is formed as the second layer, a silicon nitride film (SiN film) will be formed as the film.

[0096] (Atmospheric pressure return step: S8) Once the above-described film formation process is complete, inert gas is supplied into the processing chamber 201 from gas supply pipes 232c and 232d, respectively, and exhausted from exhaust pipe 231. This purges the processing chamber 201 with inert gas, removing any remaining reaction gases (inert gas purging). Subsequently, the atmosphere inside the processing chamber 201 is replaced with inert gas (inert gas replacement), and the pressure inside the processing chamber 201 is returned to atmospheric pressure (atmospheric pressure return: S8).

[0097] (Removal step: S9) Subsequently, the seal cap 219 is lowered by the boat elevator 115, opening the lower end of the manifold 209, and the processed wafers 200, supported by the boat 217, are unloaded from the lower end of the manifold 209 to the outside of the reaction tube 203 (boat unloading). After boat unloading, the shutters 219s are moved, and the lower end opening of the manifold 209 is sealed by the shutters 219s via the O-ring 220c (shutter closing). After the processed wafers 200 have been unloaded from the reaction tube 203, they are removed from the boat 217 (wafer discharge). After wafer discharge, the empty boat 217 may be brought into the processing chamber 201.

[0098] Here, it is preferable to control the furnace pressure during substrate processing within a range of 10 Pa or more and 300 Pa or less. This is because if the furnace pressure is lower than 10 Pa, the mean free path of the gas molecules becomes longer than the Debye length of the plasma, and the plasma that directly strikes the furnace wall becomes more pronounced, making it difficult to suppress particle generation. Also, if the furnace pressure is higher than 300 Pa, the plasma generation efficiency saturates, so even if reaction gas is supplied, the amount of plasma generated does not change, resulting in the wasteful consumption of reaction gas. At the same time, the mean free path of the gas molecules becomes shorter, which reduces the efficiency of transporting plasma active species to the wafer.

[0099] (3) Effects of this embodiment By configuring the area of ​​the wafer 200 loaded in the boat 217 to be 12% of the output wavelength of the high-frequency power supply 320, and by configuring the tips of the second type electrode 300-2 and the third type electrode 300-3 to be 0.5 to 6% lower than the output wavelength of the high-frequency power supply 320 from the uppermost wafer position, and configuring the tip of the zero type electrode 300-0 to be at the same position as or higher than the uppermost wafer position, the electric field generated between the inner wall of the reaction tube 203 near the electrode 300 and the wafer 200 becomes uniformly and strongly distributed in the vertical direction (the direction in which the substrates are stacked), the density of the plasma 302 becomes high and uniformly distributed in the vertical direction, making it possible to simultaneously improve the efficiency and quality of substrate processing and the uniformity between substrates.

[0100] The embodiments of this disclosure have been described in detail above. However, this disclosure is not limited to the embodiments described above, and can be modified in various ways without departing from its essence.

[0101] Furthermore, in the embodiments described above, for example, an example was described in which the reactants were supplied after the raw materials. This disclosure is not limited to such embodiments, and the supply order of the raw materials and reactants may be reversed. That is, the raw materials may be supplied after the reactants. By changing the supply order, it is possible to change the film quality and composition ratio of the formed film.

[0102] This disclosure is suitably applicable not only when forming an SiO film or a SiN film on a wafer 200, but also when forming a Si-based oxide film such as a silicon carbide film (SiOC film), a silicon carbonitride film (SiOCN film), or a silicon oxynitride film (SiON film) on a wafer 200.

[0103] For example, in addition to the gases mentioned above, or in addition to these gases, nitrogen (N)-containing gases such as ammonia (NH3) gas, carbon (C)-containing gases such as propylene (C3H6) gas, and boron (B)-containing gases such as boron trichloride (BCl3) gas can be used to form films such as SiN films, SiON films, SiOC films, SiCN films, SiBN films, SiBCN films, and BCN films. The order in which each gas is flowed can be changed as appropriate. When forming these films, the same processing conditions as in the above-described embodiment can be used, and the same effects as in the above-described embodiment can be obtained. In these cases, the above-described reaction gases can be used as the oxidizing agent in the reaction gas.

[0104] Furthermore, this disclosure is also suitably applicable when forming a metallic oxide film or metallic nitride film containing metallic elements such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), and tungsten (W) on a wafer 200. In other words, this disclosure relates to a wafer 200 on which TiO film, TiOC film, TiOCN film, TiON film, TiN film, TiSiN film, TiBN film, TiBCN film, ZrO film, ZrOC film, ZrOCN film, ZrON film, ZrN film, ZrSiN film, ZrBN film, ZrBCN film, HfO film, HfOC film, HfOCN film, HfON film, HfN film, HfSiN film, HfBN film, HfBCN film, TaO film, TaOC film, TaOCN film, TaON film, TaN film, TaSiN film, TaBN film, TaBCN film It can also be suitably applied when forming NbO films, NbOC films, NbOCN films, NbON films, NbN films, NbSiN films, NbBN films, NbBCN films, AlO films, AlOC films, AlOCN films, AlON films, AlN films, AlSiN films, AlBN films, AlBCN films, MoO films, MoOC films, MoOCN films, MoON films, MoN films, MoSiN films, MoBN films, MoBCN films, WO films, WOC films, WOCN films, WON films, WN films, WSiN films, WBN films, WBCN films, etc.

[0105] In these cases, for example, tetrakis(dimethylamino)titanium (Ti[N(CH3)2]4, abbreviated as TDMAT) gas, tetrakis(ethylmethylamino)hafnium (Hf[N(C2H5)(CH3)]4, abbreviated as TEMAH) gas, tetrakis(ethylmethylamino)zirconium (Zr[N(C2H5)(CH3)]4, abbreviated as TEMAZ) gas, trimethylaluminum (Al(CH3)3, abbreviated as TMA) gas, titanium tetrachloride (TiCl4) gas, hafnium tetrachloride (HfCl4) gas, etc. can be used as raw material gases.

[0106] In other words, this disclosure can be suitably applied when forming metalloid films containing metalloid elements or metallic films containing metallic elements. The processing procedures and conditions for these film formation processes can be the same as those for the film formation processes shown in the embodiments and modifications described above. In these cases as well, the same effects as those of the embodiments described above can be obtained.

[0107] It is preferable that the recipes used for film deposition processes be prepared individually according to the processing content and stored in the storage device 121c via a telecommunications line or external storage device 123. When starting various processes, it is preferable that the CPU 121a appropriately selects the appropriate recipe from among the multiple recipes stored in the storage device 121c according to the processing content. This makes it possible to form thin films of various film types, composition ratios, film quality, and film thickness in a general-purpose manner and with good reproducibility using a single substrate processing device. Furthermore, it reduces the burden on the operator and allows various processes to be started quickly while avoiding operational errors.

[0108] The above-mentioned recipes are not limited to newly created ones; they may also be prepared, for example, by modifying existing recipes already installed in the board processing device. When modifying a recipe, the modified recipe may be installed in the board processing device via a telecommunications line or a recording medium containing the recipe. Alternatively, existing recipes already installed in the board processing device may be directly modified by operating the input / output device 122 provided in the existing board processing device.

[0109] <Preferred aspects of this disclosure> The following are preferred embodiments of this disclosure.

[0110] (Note 1) According to one aspect of this disclosure, An electrode for generating plasma, An electrode is provided, comprising: a first electrode group consisting of at least one first electrode to which an arbitrary potential is applied, a second electrode having a different length from the first electrode to which an arbitrary potential is applied, and at least one third electrode to which a reference potential is applied; and a second electrode group consisting of at least one fourth electrode to which an arbitrary potential is applied, at least one fifth electrode having a different length from the fourth electrode to which an arbitrary potential is applied, and at least one sixth electrode to which a reference potential is applied.

[0111] (Note 2) In the electrode of Appendix 1, preferably, The second electrode is shorter in length than the first electrode.

[0112] (Note 3) In the electrode of Appendix 1 or Appendix 2, preferably, The fifth electrode is shorter in length than the fourth electrode.

[0113] (Note 4) In any of the electrodes described in Appendix 1 to 3, preferably, The fifth electrode is shorter in length than the second electrode.

[0114] (Note 5) In any of the electrodes described in Appendix 1 to 4, preferably, The second electrode is shorter in length than the third electrode.

[0115] (Note 6) In any of the electrodes described in Appendix 1 to 5, preferably, The fifth electrode is shorter in length than the sixth electrode.

[0116] (Note 7) In any of the electrodes described in Appendix 1 to 6, preferably, The first electrode and the fourth electrode are of the same length.

[0117] (Note 8) In any of the electrodes described in Appendix 1 to 7, preferably, The third electrode and the sixth electrode are of the same length.

[0118] (Note 9) In any of the electrodes described in Appendix 1 to 8, preferably, The first electrode and the third electrode are of the same length.

[0119] (Note 10) In any of the electrodes described in Appendix 1 to 9, preferably, The fourth electrode and the sixth electrode are of the same length.

[0120] (Note 11) In any of the electrodes described in Appendix 1 to 10, preferably, The lengths of the second electrode and the fourth electrode, which are positioned next to the third electrode, are different.

[0121] (Note 12) In any of the electrodes described in Appendix 1 to 11, preferably, The first electrode, the second electrode, and the third electrode are arranged in the order of the first electrode, the second electrode, and the third electrode, and the fourth electrode, the fifth electrode, and the sixth electrode are arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode.

[0122] (Note 13) In any of the electrodes described in Appendix 1 to 12, preferably, The first electrode, the second electrode, and the third electrode are arranged at equal intervals, and the fourth electrode, the fifth electrode, and the sixth electrode are arranged at equal intervals.

[0123] (Note 14) In any of the electrodes described in Appendix 1 to 13, preferably, The distance between the centers of the first electrode and the second electrode, the distance between the centers of the second electrode and the third electrode, the distance between the centers of the fourth electrode and the fifth electrode, and the distance between the centers of the fifth electrode and the sixth electrode shall be between 13.0 mm and 53.5 mm.

[0124] (Note 15) In any of the electrodes described in Appendix 1 to 14, preferably, The first electrode, the second electrode, the third electrode, the fourth electrode, the fifth electrode, and the sixth electrode are arranged in a direction in which multiple substrates are stacked and held (perpendicular to the processing chamber).

[0125] (Note 16) In any of the electrodes described in Appendix 1 to 15, preferably, the tip of the second electrode is positioned lower than the tip of the first electrode.

[0126] (Note 17) In any of the electrodes described in Appendix 1 to 16, preferably, The tip of the fifth electrode is positioned lower than the tip of the fourth electrode.

[0127] (Note 18) In any of the electrodes described in Appendix 1 to 17, preferably, The tip of the fifth electrode is positioned lower than the tip of the second electrode.

[0128] (Note 19) In any of the electrodes described in Appendix 1 to 18, preferably, The tip of the second electrode is positioned lower than the tip of the third electrode.

[0129] (Note 20) In any of the electrodes described in Appendix 1 to 19, preferably, The tip of the fifth electrode is positioned lower than the tip of the sixth electrode.

[0130] (Note 21) In any of the electrodes described in Appendix 1 to 20, preferably, The tip of the first electrode and the tip of the fourth electrode are positioned at the same height.

[0131] (Note 22) In any of the electrodes described in Appendix 1 to 21, preferably, The tip of the third electrode and the tip of the sixth electrode are positioned at the same height.

[0132] (Note 23) In any of the electrodes listed in Appendix 1 to 22, preferably, The tips of the second electrode and the fifth electrode are positioned at a position 0.5% to 6% lower than the output wavelength of the applied high-frequency power supply, relative to the position of the uppermost substrate among the stacked and held substrates.

[0133] (Note 24) In any of the electrodes described in Appendix 1 to 23, preferably, The frequency of the high-frequency power supply applied to the first electrode, the second electrode, the fourth electrode, and the fifth electrode shall be between 25 MHz and 35 MHz.

[0134] (Note 25) In any of the electrodes described in Appendix 1 to 24, preferably, The first electrode group and the second electrode group are provided outside the processing chamber for processing the substrate and are configured to generate plasma inside the processing chamber.

[0135] (Note 26) In any of the electrodes listed in Appendix 1 to 25, preferably, It is equipped with a heating section for heating the substrate, The first electrode group and the second electrode group are provided between the processing chamber and the heating section.

[0136] (Note 27) According to one aspect of this disclosure, A processing room for processing substrates, A plasma generating unit comprising: an electrode for generating plasma, comprising: a first electrode group comprising at least one first electrode to which an arbitrary potential is applied, a second electrode having a different length from the first electrode to which an arbitrary potential is applied, and at least one third electrode to which a reference potential is applied; and a second electrode group comprising at least one fourth electrode to which an arbitrary potential is applied, at least one fifth electrode having a different length from the fourth electrode to which an arbitrary potential is applied, and at least one sixth electrode to which a reference potential is applied; A substrate processing apparatus is provided that includes the following.

[0137] (Note 28) According to one aspect of this disclosure, A substrate processing apparatus equipped with one of the electrodes described in Appendix 1 to 26 is provided.

[0138] (Note 29) According to one aspect of this disclosure, A process of loading the substrate into the processing chamber of a substrate processing apparatus, which comprises a processing chamber for processing the substrate, and a plasma generating unit having electrodes for generating plasma, the first electrode group comprising at least one first electrode to which an arbitrary potential is applied, a second electrode having a different length from the first electrode to which an arbitrary potential is applied, and at least one third electrode to which a reference potential is applied, and at least one fourth electrode to which an arbitrary potential is applied, at least one fifth electrode having a different length from the fourth electrode to which an arbitrary potential is applied, and at least one sixth electrode to which a reference potential is applied, The process includes a step of generating plasma using the plasma generating unit within the processing chamber, A method for manufacturing a semiconductor device having [a certain characteristic] is provided.

[0139] (Note 30) According to one aspect of this disclosure, A process of loading the substrate into the processing chamber of a substrate processing apparatus, which comprises a processing chamber for processing the substrate, and a plasma generating unit having electrodes for generating plasma, the first electrode group comprising at least one first electrode to which an arbitrary potential is applied, a second electrode having a different length from the first electrode to which an arbitrary potential is applied, and at least one third electrode to which a reference potential is applied, and at least one fourth electrode to which an arbitrary potential is applied, at least one fifth electrode having a different length from the fourth electrode to which an arbitrary potential is applied, and at least one sixth electrode to which a reference potential is applied, The process includes a step of generating plasma using the plasma generating unit within the processing chamber, A substrate processing method having the following is provided.

[0140] (Note 31) According to one aspect of this disclosure, A procedure for loading a substrate into the processing chamber of a substrate processing apparatus, which comprises a processing chamber for processing a substrate, and a plasma generating unit having electrodes for generating plasma, the first electrode group comprising at least one first electrode to which an arbitrary potential is applied, a second electrode having a different length from the first electrode to which an arbitrary potential is applied, and at least one third electrode to which a reference potential is applied, and at least one fourth electrode to which an arbitrary potential is applied, at least one fifth electrode having a different length from the fourth electrode to which an arbitrary potential is applied, and at least one sixth electrode to which a reference potential is applied, and a plasma generating unit, The procedure for generating plasma in the processing chamber by the plasma generating unit, A program is provided that causes the substrate processing device to execute the following using a computer. [Explanation of Symbols]

[0141] 300...electrode 300-0 ···Type 0 electrode 300-1 ···Type 1 electrode 300-2...Type 2 electrode 300-3 ···Type 3 electrode

Claims

1. A processing room for processing substrates, A plasma generating unit comprising: a first electrode group consisting of a first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied, and a third electrode to which a reference potential is applied, arranged in the order of the first electrode, the second electrode, and the third electrode; a second electrode group consisting of a fourth electrode to which an arbitrary potential is applied, a fifth electrode to which an arbitrary potential is applied and which has a different length from the second electrode, and a sixth electrode to which a reference potential is applied, arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode; A substrate processing apparatus equipped with the following:

2. The substrate processing apparatus according to claim 1, wherein the first electrode and the third electrode are of the same length.

3. The substrate processing apparatus according to claim 1, wherein the fifth electrode is shorter than the second electrode.

4. A substrate processing apparatus according to claim 1, comprising a third electrode group consisting of a seventh electrode to which an arbitrary potential is applied, an eighth electrode to which an arbitrary potential is applied and which has a different length from the second electrode, and a ninth electrode to which a reference potential is applied, the third electrode group being arranged in the order of the seventh electrode, the eighth electrode, and the ninth electrode.

5. The substrate processing apparatus according to claim 4, wherein the seventh electrode and the ninth electrode are of the same length.

6. The substrate processing apparatus according to claim 4, wherein the seventh electrode is provided adjacent to the sixth electrode and the eighth electrode.

7. A substrate processing apparatus according to claim 1, comprising a third electrode group consisting of a seventh electrode to which an arbitrary potential is applied, an eighth electrode to which an arbitrary potential is applied and which has a different length from the fifth electrode, and a ninth electrode to which a reference potential is applied, the third electrode group being arranged in the order of the seventh electrode, the eighth electrode, and the ninth electrode.

8. The substrate processing apparatus according to claim 7, wherein the seventh electrode and the ninth electrode are of the same length.

9. The substrate processing apparatus according to claim 7, wherein the seventh electrode is provided adjacent to the sixth electrode and the eighth electrode.

10. The substrate processing apparatus according to claim 4, comprising a fourth electrode group consisting of a tenth electrode to which an arbitrary potential is applied, an eleventh electrode to which an arbitrary potential is applied and which has a different length from the fifth electrode, and a twelfth electrode to which a reference potential is applied, the fourth electrode group being arranged in the order of the tenth electrode, the eleventh electrode, and the twelfth electrode.

11. The substrate processing apparatus according to claim 10, wherein the tenth electrode and the twelfth electrode are of the same length.

12. The substrate processing apparatus according to claim 10, wherein the tenth electrode is provided adjacent to the ninth electrode and the eleventh electrode.

13. The substrate processing apparatus according to claim 1, wherein the second electrode of the first electrode group and the fourth electrode of the second electrode group are arranged adjacent to the third electrode, and the spacing between the third electrode and the second electrode and the spacing between the third electrode and the fourth electrode are equal.

14. The substrate processing apparatus according to claim 4, wherein the first electrode, the second electrode, the third electrode, the fourth electrode, the fifth electrode, the sixth electrode, the seventh electrode, the eighth electrode, and the ninth electrode are arranged adjacent to each other at equal intervals.

15. The substrate processing apparatus according to claim 1, wherein the first electrode group and the second electrode group are arranged adjacent to each other.

16. The substrate processing apparatus according to claim 4, wherein the second electrode group is arranged adjacent to the first electrode group and the third electrode group.

17. The substrate processing apparatus according to claim 4, wherein the third electrode group and the second electrode group are arranged adjacent to each other.

18. An electrode for generating plasma, A first electrode group consisting of a first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied, and a third electrode to which a reference potential is applied, arranged in the order of the first electrode, the second electrode, and the third electrode; a second electrode group consisting of a fourth electrode to which an arbitrary potential is applied, a fifth electrode to which an arbitrary potential is applied and which has a different length from the second electrode, and a sixth electrode to which a reference potential is applied, arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode; An electrode having

19. A substrate processing apparatus comprising: a processing chamber for processing a substrate; a plasma generating unit comprising: a plasma generating unit having a first electrode group for generating plasma, which consists of a first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied, and a third electrode to which a reference potential is applied, arranged in the order of the first electrode, the second electrode, and the third electrode; a second electrode group comprising a fourth electrode to which an arbitrary potential is applied, a fifth electrode to which an arbitrary potential is applied and which has a different length from the second electrode, and a sixth electrode to which a reference potential is applied, arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode; and a plasma generating unit having a processing chamber for processing a substrate; and a plasma generating unit having a first electrode group for generating plasma, which consists of a first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied and which has a different length from the second electrode; and a sixth electrode to which a reference potential is applied, arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode; and a plasma generating unit having a processing chamber for processing a substrate; The process includes a step of generating plasma using the plasma generating unit within the processing chamber, A substrate processing method having the following characteristics.

20. A substrate processing apparatus comprising: a processing chamber for processing a substrate; a plasma generating unit comprising: a plasma generating unit having a first electrode group for generating plasma, which consists of a first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied, and a third electrode to which a reference potential is applied, arranged in the order of the first electrode, the second electrode, and the third electrode; a second electrode group comprising a fourth electrode to which an arbitrary potential is applied, a fifth electrode to which an arbitrary potential is applied and which has a different length from the second electrode, and a sixth electrode to which a reference potential is applied, arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode; and a plasma generating unit having a processing chamber for processing a substrate; and a plasma generating unit having a first electrode group for generating plasma, which consists of a first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied and which has a different length from the second electrode; and a sixth electrode to which a reference potential is applied, arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode; and a plasma generating unit having a processing chamber for processing a substrate; The process includes a step of generating plasma using the plasma generating unit within the processing chamber, A method for manufacturing a semiconductor device having [a certain feature].

21. A procedure for transporting a substrate into the processing chamber of a substrate processing apparatus, which comprises a processing chamber for processing a substrate, and a plasma generating unit comprising a plasma generating unit having a first electrode group composed of a first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied, and a third electrode to which a reference potential is applied, arranged in the order of the first electrode, the second electrode, and the third electrode, and a fourth electrode to which an arbitrary potential is applied, a fifth electrode to which an arbitrary potential is applied and which has a different length from the second electrode, and a sixth electrode to which a reference potential is applied, arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode, and a plasma generating unit, The procedure for generating plasma in the processing chamber by the plasma generating unit, A program that causes the substrate processing device to execute the above.

Images