Furnace tubes and their usage

Abstract

This invention provides furnace tubes used in processes such as wafer deposition, diffusion, oxidation, and annealing, and methods for using them. [Solution] The furnace tube comprises a chamber 110 for processing wafers, atmospheric pressure intake means 120 and low-pressure intake means 130, each independently connected to the chamber and for supplying air to the chamber, atmospheric pressure control means 170 and low-pressure control means 180, each independently for controlling the air pressure inside the chamber, an atmospheric pressure jet pipe located inside the chamber and connected to the atmospheric pressure intake means, and a low-pressure jet pipe located inside the chamber and connected to the low-pressure intake means, thereby enabling compatibility between atmospheric pressure and low-pressure process processing with a single furnace tube.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and more particularly, to a furnace tube and a method of using the same.

Background Art

[0002] In the semiconductor chip manufacturing process, a furnace tube is an essential device. The furnace tube can be used in processes such as wafer deposition, diffusion, oxidation, and annealing.

[0003] In related technologies, the furnace tube can only achieve either normal pressure control or low pressure control, that is, there are only normal pressure furnace tubes or low pressure furnace tubes.

[0004] In view of the existence of the above technical problems, the present invention provides a novel furnace tube and a method of using the same to at least partially solve the above problems.

Summary of the Invention

[0005] In the section of the summary of the invention, a series of concepts are introduced in a simplified form, and in the section of the specific embodiments, further detailed explanations are provided. The section of the content of the invention of the present application does not intend to limit the main features or essential technical features of the technical solution required to be protected, nor does it intend to determine the protection scope of the technical solution required to be protected.

[0006] In response to the existing problems, the present invention provides a furnace tube having the following configuration.

[0007] The furnace tube includes a chamber for processing a wafer, normal pressure intake means and low pressure intake means for supplying air to the chamber, wherein the normal pressure intake means and the low pressure intake means are each independently connected to the chamber, normal pressure control means and low pressure control means for controlling the air pressure in the chamber, wherein the normal pressure control means and the low pressure control means each independently control the air pressure in the chamber, A normal pressure nozzle is placed inside the chamber and connected to the normal pressure intake means, A low-pressure injection pipe is placed inside the chamber and connected to the low-pressure intake means, It is equipped with.

[0008] In some embodiments of the present application, The chamber comprises an intake end and an exhaust end, The atmospheric pressure intake means is connected to the atmospheric pressure injection pipe via the intake end, The low-pressure intake means is connected to the low-pressure injection pipe via the intake end, The atmospheric pressure control means and the low pressure control means are each connected to the exhaust end.

[0009] In some embodiments of the present application, The low-pressure control means is A first main exhaust pipe, a first branch exhaust pipe, a second branch exhaust pipe, and a second main exhaust pipe providing a gas passage, wherein the intake end of the first main exhaust pipe is connected to the exhaust end, the intake end of the first branch exhaust pipe and the intake end of the second branch exhaust pipe are each connected to the exhaust end of the first main exhaust pipe, and the exhaust end of the first branch exhaust pipe and the exhaust end of the second branch exhaust pipe are each connected to the second main exhaust pipe. A main valve for controlling the air pressure inside the chamber when the chamber is in a process state, wherein the main valve is provided in the first branch exhaust pipe. A bypass valve for controlling the pressure inside the chamber when the chamber is in a non-processing state, wherein the bypass valve is provided in the second branch exhaust pipe, An extraction pump for extracting gas from inside the chamber, wherein one end of the extraction pump is connected to the exhaust end of the second main exhaust pipe, and the other end is connected to an exhaust gas treatment means. It is equipped with [the following].

[0010] In some embodiments of the present application, The aforementioned atmospheric pressure control means is The system comprises a third main exhaust pipe, a mixing drain pipe, a drain pipe, a first branch exhaust pipe, a second branch exhaust pipe, a third branch exhaust pipe, and a fourth branch exhaust pipe, wherein the exhaust end of the third main exhaust pipe is connected to one end of a condenser, the other end of the condenser is connected to the inlet of the mixing drain pipe, the outlet of the mixing drain pipe is connected to the inlet of the drain pipe, and to the intake ends of the first branch exhaust pipe, the second branch exhaust pipe, the third branch exhaust pipe, and the fourth branch exhaust pipe, respectively, and the exhaust ends of the first branch exhaust pipe, the second branch exhaust pipe, the third branch exhaust pipe, and the fourth branch exhaust pipe are connected to exhaust gas treatment means. The drain pipe is equipped with a water tank and a pneumatic valve, the first branch exhaust pipe is equipped with a pneumatic valve and an absolute pressure control valve, the second branch exhaust pipe is equipped with a pneumatic valve and a relative pressure control valve, the third branch exhaust pipe is equipped with an automatic valve and a check valve, and the fourth branch exhaust pipe is equipped with a pneumatic valve. The relative pressure control valve is used to control the air pressure inside the chamber when the temperature inside the chamber is higher than the first set temperature. The absolute pressure control valve is used to control the air pressure inside the chamber when the temperature inside the chamber is below the first set temperature.

[0011] In some embodiments of the present application, The atmospheric pressure injection pipe comprises a main body portion extending in the height direction of the chamber and a connecting portion connected to the atmospheric pressure intake means. Multiple nozzles are uniformly provided on the main body. The intake end is located at the bottom of the chamber, The dimensions of the nozzle increase in proportion to the increase in the distance between the nozzle and the intake end, so that the dimensions of the nozzle become larger as it moves further away from the intake end. The height of the uppermost nozzle is greater than or equal to the height of the uppermost wafer in the chamber.

[0012] In some embodiments of the present application, The low-pressure nozzle is L-shaped, One end of the low-pressure injection pipe is connected to the low-pressure intake means, The other end of the low-pressure injection pipe is an air outlet that extends upward along the height of the chamber, and extends in the direction of the height of the chamber. The height of the low-pressure injection pipe is lower than the height of the wafer at the lowest end of the chamber.

[0013] In some embodiments of the present application, The aforementioned atmospheric pressure intake means is It comprises a first nitrogen supply pipe, an oxygen supply pipe, a hydrogen supply pipe, a first mixed gas supply pipe, a second mixed gas supply pipe, and a third mixed gas supply pipe. The exhaust end of the first nitrogen supply pipe is connected to the intake ends of the first nitrogen branch supply pipe and the second nitrogen branch supply pipe, respectively; the exhaust ends of the first nitrogen branch supply pipe and the oxygen supply pipe are connected to the intake ends of the first mixed gas supply pipe, respectively; the exhaust ends of the second nitrogen branch supply pipe and the hydrogen supply pipe are connected to the intake ends of the second mixed gas supply pipe, respectively; the exhaust ends of the first mixed gas supply pipe and the second mixed gas supply pipe are connected to the intake ends of the third mixed gas supply pipe, respectively; and the exhaust end of the third mixed gas supply pipe is connected to the intake end of the atmospheric pressure injection pipe. The first nitrogen supply pipe, the oxygen supply pipe, and the hydrogen supply pipe each include a filter, a manual valve, a pressure regulating valve, and a pressure sensor in that order, and the hydrogen supply pipe also includes a pneumatic valve located after the pressure sensor, and the first nitrogen branch supply pipe and the second nitrogen branch supply pipe each include a pneumatic valve, The first mixed gas supply pipe and the second mixed gas supply pipe are each equipped with a gas mass flow controller and a pneumatic valve, and the third mixed gas supply pipe is equipped with an igniter.

[0014] In some embodiments of the present application, The low-pressure intake means is The system comprises the aforementioned second nitrogen supply pipe, fluorine gas supply pipe, special gas supply pipe, fourth mixed gas supply pipe, fifth mixed gas supply pipe, sixth mixed gas supply pipe, first mixed gas branch supply pipe, second mixed gas branch supply pipe, third mixed gas branch supply pipe, and fourth mixed gas branch supply pipe. The exhaust end of the second nitrogen supply pipe is connected to the intake ends of the third nitrogen branch supply pipe and the fourth nitrogen branch supply pipe respectively. The exhaust ends of the third nitrogen branch supply pipe and the fluorine supply pipe are connected to the intake end of the fourth mixed gas supply pipe respectively. The exhaust ends of the fourth nitrogen branch supply pipe and the special gas supply pipe are connected to the intake ends of the fifth mixed gas supply pipe respectively. The exhaust end of the fourth mixed gas supply pipe is connected to the intake ends of the first mixed gas branch supply pipe and the second mixed gas branch supply pipe respectively. The exhaust end of the fifth mixed gas supply pipe is connected to the intake ends of the third mixed gas branch supply pipe and the fourth mixed gas branch supply pipe respectively. The exhaust ends of the first mixed gas branch supply pipe and the third mixed gas branch supply pipe are connected to the intake ends of the sixth mixed gas supply pipe respectively. The exhaust end of the sixth mixed gas supply pipe is connected to the intake end of the low-pressure injection pipe. The exhaust ends of the second mixed gas branch supply pipe and the fourth mixed gas branch supply pipe are connected to the second main exhaust pipe respectively. The second nitrogen supply pipe sequentially includes a filter, a manual valve, a pressure regulating valve, and a pressure sensor. The fluorine supply pipe sequentially includes a filter, a manual valve, a filter, a pressure sensor, and a pneumatic valve. The special gas supply pipe sequentially includes a filter, a manual valve, a filter, a pressure regulating valve, a pressure sensor, and a pneumatic valve. The third nitrogen branch supply pipe, the fourth nitrogen branch supply pipe, the first mixed gas branch supply pipe, the second mixed gas branch supply pipe, the third mixed gas branch supply pipe, and the fourth mixed gas branch supply pipe each include a pneumatic valve. The fourth mixed gas branch supply pipe and the fifth mixed gas branch supply pipe each include a gas mass flow controller.

[0015] In some embodiments of the present application, The exhaust gas treatment means includes at least two exhaust gas treatment chambers, and can be switched to another exhaust gas treatment chamber when one of the exhaust gas treatment chambers stops abnormally.

[0016] According to another aspect of the present application, a method of using a furnace tube is provided. This method of use is A step of maintaining the normal pressure intake means and the normal pressure control means in an operating state, maintaining the low pressure intake means and the low pressure control means in a stopped state, and performing a normal pressure process treatment on the wafer in the chamber is included.

[0017] In some embodiments of the present application, The step of controlling to switch the working environment in the chamber from a low pressure environment to a normal pressure environment is Controlling the low pressure intake means to introduce a mixed gas of fluorine and nitrogen into the chamber, and completely removing the film layer formed on the inner wall of the chamber; Stopping the control of the low pressure intake means and the low pressure control means, starting the normal pressure intake means, and introducing nitrogen to change the inside of the chamber from a low pressure environment to a normal pressure state; Starting the normal pressure control means; and includes.

[0018] According to another aspect of the present application, a method of using a furnace tube is provided. This method of use is Maintaining the low pressure intake means and the low pressure control means in an operating state, maintaining the normal pressure intake means and the normal pressure control means in a stopped state, and performing a low pressure process treatment on the wafer in the chamber.

[0019] According to the furnace tube and the method of using the furnace tube according to the embodiments of the present application, by providing a normal pressure intake device for supplying air to the chamber and a normal pressure control device for controlling the air pressure in the chamber, a normal pressure process treatment can be performed on the wafer. By providing a low pressure intake device for supplying air to the chamber and a low pressure air pressure control device for controlling the air pressure in the chamber, a low pressure process treatment can be performed on the wafer. Therefore, the compatibility between the normal pressure process treatment and the low pressure process treatment can be realized by one furnace tube.

Brief Description of the Drawings

[0020] The following accompanying drawings are used herein as part of the Application to help understand the Application. The accompanying drawings illustrate embodiments and descriptions thereof, thereby illustrating the principles of the Application.

[0021] [Figure 1] Figure 1 is a schematic diagram showing the structure of a furnace tube according to an embodiment of the present application. [Figure 2] Figure 2 is a schematic diagram showing a part of the structure of a furnace tube in an embodiment of the present invention. [Figure 3] Figure 3 is a schematic diagram of the atmospheric pressure control device according to an embodiment of the present application. [Figure 4] Figure 4 shows a schematic diagram of the low-voltage control device according to the embodiment of the present invention. [Figure 5] Figure 5 shows a schematic structure of the exhaust gas treatment device according to the embodiment of the present application. [Figure 6] Figure 6 shows a schematic structure of the atmospheric pressure intake device according to an embodiment of the present application. [Figure 7] Figure 7 shows a schematic structure of a low-pressure intake device according to an embodiment of the present application. [Figure 8] Figure 8 shows a schematic diagram of the chamber of the embodiment of the present invention and the atmospheric pressure nozzle and low-pressure nozzle provided therein. [Figure 9] Figure 9 shows a schematic diagram of the atmospheric pressure jet pipe according to the embodiment of the present application. [Figure 10] Figure 10 is a schematic diagram of the low-pressure jet pipe according to an embodiment of the present invention. [Modes for carrying out the invention]

[0022] The following description provides many specific details to better understand the present application. However, it will be apparent to those skilled in the art that the present application can be implemented without one or more of these details. In other embodiments, some technical features well known in the art are omitted to avoid confusion with the present application.

[0023] This application can be implemented in different forms and should not be construed as being limited to the embodiments presented herein. Rather, by providing these embodiments, the disclosure is made thorough and complete, and the scope of the application is fully conveyed to those skilled in the art. In the accompanying drawings, the dimensions of layers and areas, and their relative sizes, may be exaggerated for clarity. The same reference numerals throughout indicate the same elements.

[0024] In this specification, when a component or layer is described as "on top of," "adjacent to," "connected to," or "combined with" another component or layer, it may be directly on top of, directly adjacent to, directly connected to, or directly combined with the other component or layer, or there may be components or layers interposed between them. Conversely, when a component is described as "directly on top of," "directly adjacent to," "directly connected to," or "directly combined with" another component or layer, it means that there are no components or layers interposed between them. The terms first, second, third, etc., may be used to describe various components, modules, regions, layers, and / or parts, but these components, modules, regions, layers, and / or parts should not be limited by these terms. These terms are used only to distinguish one component, module, region, layer, or part from another component, module, region, layer, or part. Accordingly, without departing from the teachings of this application, the first component, module, region, layer, or part described below may be represented as the second component, module, region, layer, or part.

[0025] For example, spatial relationship terms such as “below,” “underside,” “below,” “above,” and “above” may be used herein for explanatory purposes to describe the relationship between one part or feature shown in the drawings and another part or feature. Spatial relationship terms are intended to include different orientations of the device in use and operation, in addition to the orientation shown in the drawings. For example, if the device in the accompanying drawings is turned over, a part or feature described as “below the other part or feature” or “below it” is oriented to be “above” the other part or feature. Thus, the exemplary terms “underside” and “below” may include both “above” and “below” the other part or feature. The device may be oriented in a different direction (90-degree rotation or other orientations), and the spatial expressions used herein shall be interpreted accordingly.

[0026] The terms used herein are intended solely to describe embodiments and not to limit the application. Where used herein, the singular “one,” “one,” and “the / the said” are also intended to include the plural unless the context explicitly indicates otherwise. Furthermore, where used herein, the terms “consist of,” “comprising,” and / or “including” identify the presence of such feature, integer, process, operation, part, and / or module, but do not exclude the presence or addition of one or more other features, integers, processes, operations, parts, modules, and / or sets. Where used herein, the term “and / or” includes any combination of the relevant enumerated items.

[0027] In related technologies, furnace tubes can only be individually pressure-controlled at atmospheric or low pressure; that is, only atmospheric pressure or low-pressure furnace tubes are available.

[0028] To solve at least one of the above technical problems, the present invention provides a furnace tube. The furnace tube comprises a chamber for processing wafers, an atmospheric pressure intake means and a low-pressure intake means for supplying air to the chamber, wherein the atmospheric pressure intake means and the low-pressure intake means are each independently connected to the chamber, and an atmospheric pressure control means and a low-pressure control means for controlling the air pressure in the chamber, wherein the atmospheric pressure control means and the low-pressure control means each independently control the air pressure in the chamber, and an atmospheric pressure jet pipe disposed in the chamber and connected to the atmospheric pressure intake means, and a low-pressure jet pipe disposed in the chamber and connected to the low-pressure intake means.

[0029] According to the furnace tube of the present invention, by providing an atmospheric pressure intake device that supplies air to the chamber and an atmospheric pressure control device that controls the air pressure inside the chamber, atmospheric pressure processing can be performed on the wafer, and by providing a low-pressure intake device that supplies air to the chamber and a low-pressure air pressure control device that controls the air pressure inside the chamber, low-pressure processing can be performed on the wafer, thus enabling compatibility between atmospheric pressure processing and low-pressure processing with a single furnace tube.

[0030] To fully understand this application, the following description will clarify the technical solution proposed hereby by illustrating the detailed processes and structure. Preferred embodiments of this application will be described in detail below, but this application may have other embodiments in addition to those described in detail.

[0031] Multiple embodiments of the furnace tube of the present application will be described below with reference to Figures 1 to 10. The furnace tube comprises a chamber 110 for processing wafers, an atmospheric pressure intake device 120 and a low-pressure supply device 130, and an atmospheric pressure control device 170 and a low-pressure control device 180. The atmospheric pressure intake device 120 and the low-pressure supply device 130 are used to supply air to the chamber 110 and are each independently connected to the chamber 110. The atmospheric pressure control device 170 and the low-pressure control device 180 are used to control the air pressure inside the chamber 110 and are each independently connected to the chamber 110. The atmospheric pressure control device 170 and the low-pressure control device 180 are each for independently controlling the air pressure inside the chamber 110, with an atmospheric pressure jet pipe 140 located inside the chamber 110 connected to the atmospheric pressure intake device 120, and a low-pressure jet pipe 150 located inside the chamber 110 connected to the low-pressure supply device 130.

[0032] During actual operation of the furnace tube in this embodiment, the atmospheric pressure intake device 120 and atmospheric pressure control device 170 are controlled to be in an operating state, while the low-pressure supply device 130 and low-pressure control device 180 are controlled to be in a stopped state. This allows the atmospheric pressure inside the chamber 110 to be controlled to an atmospheric pressure state by the atmospheric pressure control device 170, and air can be supplied into the chamber 110 from the atmospheric pressure intake device 120 via the atmospheric pressure jet pipe 140. By supplying air to the chamber 110, the wafers inside the furnace tube can undergo atmospheric pressure processing. Alternatively, the low-pressure supply device 130 and low-pressure control device 180 can be controlled to an enabled state, and the atmospheric pressure intake device 120 and atmospheric pressure control device 170 can be controlled to an inactive state. This controls the atmospheric pressure inside the chamber 110 to a low-pressure state via the low-pressure control device 180, and air can be supplied into the chamber 110 from the low-pressure supply device 130 via the low-pressure jet pipe 150, allowing the furnace tube to be processed at atmospheric pressure. By controlling the air pressure in the chamber 110 with the low-pressure control device 180 and supplying air to the chamber 110 via the low-pressure injection pipe 150 with the low-pressure air supply device 130, wafers in the furnace tube can be processed at low pressure.

[0033] Thus, in this embodiment, the furnace tube can perform both atmospheric pressure and low-pressure processing on a wafer, and compatibility between atmospheric pressure and low-pressure processing can be achieved with a single furnace tube.

[0034] In some embodiments, the chamber 110 includes an intake end and an exhaust end, the atmospheric pressure intake device 120 is connected to the atmospheric pressure injection pipe 140 through the intake end, the low-pressure supply device 130 is connected to the low-pressure injection pipe 150 through the intake end, and the atmospheric pressure control device 170 and the low-pressure control device 180 are connected to the exhaust end, respectively.

[0035] Here, as shown in Figure 2, a main exhaust pipe 160 is provided at the exhaust end of the chamber 110, and the atmospheric pressure control device 170 and the low-pressure control device 180 are connected to different parts of the main exhaust pipe 160 so as to be connected to the exhaust end of the chamber 110 via the main exhaust pipe 160, and control whether the inside of the chamber 110 is in an atmospheric pressure state or a low-pressure state.

[0036] In some embodiments, as shown in Figure 3, the atmospheric pressure control device 170 includes a third main exhaust pipe 1701, a mixed drain pipe 1703, a drain pipe 1705, a first branch exhaust pipe 1706, a second branch exhaust pipe 1709, a third branch exhaust pipe 1712, and a fourth branch exhaust pipe 1715, with the exhaust end of the third main exhaust pipe 1701 connected to one end of the condenser 1702. The exhaust end of the third main exhaust pipe 1701 is connected to one end of the condenser 1702, the other end of the condenser 1702 is connected to the inlet of the mixed drain pipe 1703, and the outlet of the mixed drain pipe 1703 is connected to the inlet of the drain pipe 1705 and the intake ends of the first branch exhaust pipe 1706, the second branch exhaust pipe 1709, the third branch exhaust pipe 1712, and the fourth branch exhaust pipe 1715, respectively. The exhaust ends of the first branch exhaust pipe 1706, the second branch exhaust pipe 1709, the third branch exhaust pipe 1712, and the fourth branch exhaust pipe 1715 are each connected to the exhaust gas treatment device 190. The drain pipe 1705 is equipped with a water tank 1704 and a pneumatic valve 1717, the first branch exhaust pipe 1706 is equipped with a pneumatic valve 1707 and an absolute pressure control valve 1708, the second branch exhaust pipe 1709 is equipped with a pneumatic valve 1710 and a relative pressure control valve 1711, and the third branch exhaust pipe 1709 is equipped with a pneumatic valve 1710 and a relative pressure control valve 1711. The relative pressure control valve 1711 is used to control the air pressure inside the chamber 110 when the temperature inside the chamber 110 is higher than a first set temperature, and the absolute pressure control valve 1708 is used to control the air pressure inside the chamber 110 when the temperature inside the chamber 110 is lower than or equal to the first set temperature. Furthermore, if the temperature inside the chamber 110 is below the first set temperature, the atmospheric pressure inside the chamber 110 is controlled using the absolute pressure control valve 1708.

[0037] Specifically, when atmospheric pressure control of the chamber 110 is required, whether to control the air pressure inside the chamber 110 to atmospheric pressure using the relative pressure control valve 1711 or to control the air pressure inside the chamber 110 to atmospheric pressure using the absolute pressure control valve 1708 can be determined based on whether the temperature inside the chamber 110 is higher than the first set temperature. For example, if the temperature inside the chamber 110 is higher than the first set temperature, the first branch exhaust pipe 1706 can be controlled to a closed state and the second branch exhaust pipe 1709 can be controlled to a conductive state (this is achieved by controlling the pneumatic valve 1707 and absolute pressure control valve 1708 on the first branch exhaust pipe 1706 to a closed state and the pneumatic valve 1710 and relative pressure control valve 1711 on the second branch exhaust pipe 1709 to an open state). At this time, the gas in the chamber 110 enters the third main exhaust pipe 1701 through the main exhaust pipe 160, is cooled as it passes through the condenser 1702 (for example, water vapor generated by the process can be condensed), and the liquid component produced after cooling enters the water tank 1704 on the drain pipe 1705 through the mixing drain pipe 1703 and is stored there. After being stored for a certain period, it can be discharged to the outside by opening the pneumatic valve 1717. The condensed gas enters the second branch exhaust pipe 1709 through the mixing drain pipe 1703 and enters the exhaust gas treatment device 190 through the second branch exhaust pipe 1709 so that the air pressure inside the chamber 110 becomes atmospheric pressure.When the temperature inside the chamber 110 is below the first set temperature, the second branch exhaust pipe 1709 can be controlled to a closed state and the first branch exhaust pipe 1706 can be controlled to an open state (this is achieved by controlling the pneumatic valve 1707 and absolute pressure control valve 1708 on the first branch exhaust pipe 1706 to be open and the pneumatic valve 1710 and relative pressure control valve 1711 on the second branch exhaust pipe 1709 to be closed). The absolute pressure control valve 1708 can generate a constant pumping force to extract gas from inside the chamber 110 using the principle of siphon, and by controlling the switching angle of the pneumatic valve 1707 provided on the first branch exhaust pipe 1706, the inside of the chamber 110 The magnitude of the pressure can be controlled, and the gas in the chamber 110 enters the third main exhaust pipe 1701 through the main exhaust pipe 160, passes through the condenser 1702, is cooled (for example, water vapor produced by the process can be condensed), and the liquid component produced after cooling enters the water tank 1704 on the drain pipe 1705 through the mixing drain pipe 1703, and after being stored to some extent by opening the pneumatic valve 1717, can be discharged to the outside, and the condensed gas enters the first branch drain pipe 1706 through the mixing drain pipe 1703, and enters the exhaust gas treatment device 190 through the first branch drain pipe 1706, thereby making the air pressure in the chamber 110 normal pressure.

[0038] If the pressure inside the chamber 110 is too high, the automatic valve 1713 provided in the third branch exhaust pipe 1712 will open automatically, and the pressure inside the chamber 110 will be relieved via the automatic valve 1713 and the check valve 1714 provided in the third branch exhaust pipe 1712, causing the pressure inside the chamber 110 to decrease.

[0039] If there is no need to process the wafers in the chamber 110, the pneumatic valve 1716 provided in the fourth branch exhaust pipe 1715 is opened, and the gas in the chamber 110 is discharged through the fourth branch exhaust pipe 1715, and the discharged gas can go to the exhaust gas treatment device 190.

[0040] The GN2 passed through the absolute pressure control valve 1708 or the relative pressure control valve 1711 in Figure 1 is industrially pure nitrogen (general nitrogen).

[0041] In some embodiments, the first set temperature may be set according to the actual situation, for example, the first set temperature may be 1100°C or any other suitable temperature, and is not limited thereto.

[0042] In some embodiments, as shown in Figure 6, the atmospheric pressure intake device 120 includes a first nitrogen supply pipe 1201, an oxygen supply pipe 1202, a hydrogen supply pipe 1203, a first mixed gas supply pipe 1206, a second mixed gas supply pipe 1207, and a third mixed gas supply pipe 1208. The exhaust end of the first nitrogen supply pipe 1201 is connected to the first nitrogen branch supply pipe 1204 and the second nitrogen branch supply pipe 1205, respectively. The exhaust end of the first nitrogen supply pipe 1201 is connected to the intake ends of the first nitrogen branch supply pipe 1204 and the second nitrogen branch supply pipe 1205, respectively. The exhaust ends of the first nitrogen branch supply pipe 1204 and the oxygen supply pipe 1202 are connected to the intake ends of the first mixed supply pipe 1206, respectively. The exhaust ends of the second nitrogen branch supply pipe 1205 and the hydrogen supply pipe 1203 are connected to the intake ends of the second mixed gas supply pipe 1207, respectively. The exhaust ends of the first and second mixed gas supply pipes 1206 and 1207 are connected to the intake end of the second mixed gas supply pipe 1208, respectively, and the exhaust ends of the first mixed gas supply pipe 1206 and the second mixed gas supply pipe 1207 are connected to the intake end of the third mixed gas supply pipe 1208, respectively, and the exhaust end of the third mixed gas supply pipe 1208 is connected to the intake end of the atmospheric pressure injection pipe 140. The first nitrogen supply pipe 1201, oxygen supply pipe 1202 and hydrogen supply pipe 1203 are equipped with a filter, a manual valve, a pressure regulating valve and a pressure sensor in that order, respectively, and the hydrogen supply pipe 1203 is also equipped with a pneumatic valve located behind the pressure sensor. A pneumatic valve is provided in the hydrogen supply pipe 1203 after the pressure sensor, pneumatic valves are provided in the first nitrogen branch supply pipe 1204 and the second nitrogen branch supply pipe 1205, a gas mass flow controller and a pneumatic valve are provided in the first mixed gas supply pipe 1206 and the second mixed gas supply pipe 1207, respectively, and an igniter 1209 is provided in the third mixed gas supply pipe 1208 (the igniter 1209 may be the torch component shown in Figure 6).

[0043] Specifically, the first nitrogen supply pipe 1201, the oxygen supply pipe 1202, and the hydrogen supply pipe 1203 may be connected to a nitrogen source, an oxygen gas source, and a hydrogen gas source, respectively. When the atmospheric pressure inside the chamber 110 is controlled to atmospheric pressure by the atmospheric pressure control device 170, nitrogen, oxygen, and hydrogen can be supplied to the chamber 110 via the first nitrogen supply pipe 1201, the oxygen supply pipe 1202, and the hydrogen supply pipe 1203, respectively. Here, a portion of the nitrogen supplied by the first nitrogen supply pipe 1201 enters the first mixed gas supply pipe 1206 via the first nitrogen branch supply pipe 1204, and the oxygen supplied by the oxygen supply pipe 1202 enters the first mixed gas supply pipe 1206, where the nitrogen and oxygen may be mixed. Another portion of the nitrogen supplied by the first nitrogen supply pipe 1201 enters the second mixed gas supply pipe 1207 through the second nitrogen branch supply pipe 1205, and hydrogen supplied by the hydrogen supply pipe 1203 enters the second mixed gas supply pipe 1207, where nitrogen and hydrogen are mixed. The mixed nitrogen and oxygen, and the mixed nitrogen and hydrogen then enter the third mixed gas supply pipe 1208 and are mixed, and when the igniter 1209 is ignited, they enter the chamber 110 through the atmospheric pressure injection pipe 140.

[0044] Here, filters provided in the first nitrogen supply pipe 1201, oxygen supply pipe 1202, and hydrogen supply pipe 1203 can filter the gas in the pipelines in which they are located, and manual valves provided in the first nitrogen supply pipe 1201, oxygen supply pipe 1202, and hydrogen supply pipe 1203 can open and close the pipelines in which they are located, allowing the gas in the pipelines to circulate or stop circulation. Regulators provided in the first nitrogen supply pipe 1201, oxygen supply pipe 1202, and hydrogen supply pipe 1203 can adjust the pressure in the pipelines in which they are located. Pressure sensors provided in the first nitrogen supply pipe 1201, oxygen supply pipe 1202, and hydrogen supply pipe 1203 can detect the pressure in the pipelines in which they are located.

[0045] The gas mass flow controller installed in the first mixed gas supply pipe 1206 can perform precise measurement and mass / flow rate control of the mixed nitrogen and oxygen, and the gas mass flow controller installed in the second mixed gas supply pipe 1207 can perform precise measurement and mass / flow rate control of the mixed nitrogen and hydrogen. This allows for very precise control of the flow rate of the gases used in the reaction within the chamber 110. As a result, the reaction can proceed according to the set process parameters, improving product consistency and quality. For example, in chemical vapor deposition in the manufacturing of silicon wafers, precise control of the mass flow rate of the reaction gas ensures uniform and stable performance of the film thickness deposited on the silicon wafer.

[0046] In some embodiments, as shown in Figures 8 and 9, the atmospheric pressure injection pipe 140 comprises a main body 141 extending vertically along the chamber 110 and a connecting portion 142 connected to an atmospheric pressure intake device 120. Multiple nozzles 143 are uniformly arranged on the main body 141. The intake end is located at the bottom of the chamber 110. The dimensions of the nozzles 143 increase with increasing distance between the nozzle 143 and the intake end, so that the dimensions of the nozzles 143 become larger the further they are from the intake end, and the height of the uppermost nozzle 143 is greater than or equal to the height of the uppermost wafer in the chamber 110.

[0047] Specifically, the mixed gas in the third mixed gas supply pipe 1208 enters the main body 141 of the atmospheric pressure injection pipe 140 through the connection part 142 of the atmospheric pressure injection pipe 140, and then enters the chamber 110 through a plurality of nozzles 143 arranged from bottom to top on the main body 141. The direction of gas flow is indicated by dashed and solid arrows in Figure 9. As the mixed gas passes through the plurality of nozzles 143 arranged from bottom to top, the flow rate of the mixed gas gradually decreases. However, in this embodiment, by gradually increasing the size of the plurality of nozzles 143 arranged from bottom to top on the main body 141, the drawback of the flow rate of the mixed gas gradually decreasing can be compensated for. As a result, the flow rate of the gas sprayed into the chamber 110 by each nozzle 143 becomes uniform and constant, and the flow rate of the gas in the chamber 110 can be balanced. The flow rate of the gas in the chamber 110 plays a role in controlling the uniformity of the film thickness of the product.

[0048] In some embodiments, as shown in Figure 4, the low-pressure control device 180 includes a first main exhaust pipe 1801, a first branch exhaust pipe 1802, a second branch exhaust pipe 1804, and a second main exhaust pipe 1806, which provide a gas passage. The intake end of the first main exhaust pipe 1801 is connected to the exhaust end of the chamber 110, and the intake ends of the first branch exhaust pipe 1802 and the second branch exhaust pipe 1804 are each connected to the first main exhaust pipe 1804. The exhaust ends of the first branch exhaust pipe 1802 and the second branch exhaust pipe 1804 are each connected to the exhaust end of the first main exhaust pipe 1801, and the exhaust ends of the first branch exhaust pipe 1802 and the second branch exhaust pipe 1804 are each connected to the intake end of the second main exhaust pipe 1806. The low-pressure control device 180 includes a main valve 1803 (which may be an MV valve in Figure 4, such as an electric valve) for controlling the air pressure inside the chamber 110 when the chamber 110 is in a process state. The main valve 1803 is installed on the first branch exhaust pipe 1802. The low-pressure control device 180 includes a bypass pneumatic valve 1805 for controlling the internal pressure of the chamber 110 when the chamber 110 is in a non-process state. The bypass pneumatic valve 1805 is installed on the second branch exhaust pipe 1804. The low-pressure control device 180 includes an extraction pump 1807 for pumping the internal gas of the chamber 110. One end of the pump is connected to the exhaust end of the second main exhaust pipe 1806, and the other end is connected to the exhaust gas treatment device 190.

[0049] Specifically, the first main exhaust pipe 1801 is connected to the main exhaust pipe 160, and when low-pressure control of the chamber 110 is required, the first branch exhaust pipe 1802 is controlled to be in an open state and the second branch exhaust pipe 1804 is controlled to be closed (this is achieved by controlling the main valve 1803 to be open and the bypass pneumatic valve 1805 to be closed), the extraction pump 1807 is started to extract gas through the extraction pump 1807, the gas in the chamber 110 enters the first main exhaust pipe 1801 and the first branch exhaust pipe 1802 through the main exhaust pipe 160, enters the extraction pump 1807 through the first main exhaust pipe 1801 and the first branch exhaust pipe 1802, enters the exhaust gas treatment device 190 through the extraction pump 1807, and the gas pressure in the chamber 110 is reduced to a low-pressure state. If low-pressure control of chamber 110 is not required, the second branch exhaust pipe 1804 can be controlled to the ON state and the first branch exhaust pipe 1802 to the OFF state (this is achieved by controlling the main valve 1803 to the closed state and the bypass pneumatic valve 1805 to the open state), the gas in chamber 110 can be discharged through the second branch exhaust pipe 1804, and the discharged gas can enter the exhaust gas treatment device 190.

[0050] In some embodiments, as shown in Figures 4 and 7, the low-pressure air supply device 130 includes a second nitrogen air supply pipe 1301, a fluorine air supply pipe 1302, a special gas air supply pipe 1303, a fourth mixed gas air supply pipe 1306, a fifth mixed gas air supply pipe 1307, a sixth mixed gas air supply pipe 1312, a first mixed gas branch air supply pipe 1308, a second mixed gas branch air supply pipe 1309, a third mixed gas branch air supply pipe 1310, and a fourth mixed gas branch air supply pipe 1311. The exhaust end of the second nitrogen air supply pipe 1301 is connected to the intake ends of the third nitrogen branch air supply pipe 1304 and the fourth nitrogen branch air supply pipe 1305, respectively. The exhaust ends of the third nitrogen branch air supply pipe 1304 and the fluorine air supply pipe 1302 are connected to the intake end of the fourth mixed gas air supply pipe 1306, respectively. The exhaust ends of the fourth nitrogen branch air supply pipe 1305 and the special gas air supply pipe 1303 are connected to the intake ends of the fifth mixed gas air supply pipe 1307, respectively. The exhaust end of the fourth mixed gas air supply pipe 1306 is connected to the intake ends of the first mixed gas branch air supply pipe 1308 and the second mixed gas branch air supply pipe 1309, respectively. The exhaust end of the fifth mixed gas air supply pipe 1307 is connected to the intake ends of the third mixed gas branch air supply pipe 1310 and the fourth mixed gas branch air supply pipe 1311, respectively. The exhaust ends of the first mixed gas branch air supply pipe 1308 and the third mixed gas branch air supply pipe 1310 are connected to the intake ends of the sixth mixed gas air supply pipe 1312. The exhaust end of the sixth mixed gas air supply pipe 1312 is connected to the intake end of the low-pressure injection pipe 150. The exhaust ends of the second mixed gas branch supply pipe 1309 and the fourth mixed gas branch supply pipe 1311 are connected to the second main exhaust pipe 1806, respectively. The second nitrogen supply pipe 1301 is sequentially equipped with a filter, a manual valve, a pressure regulating valve, and a pressure sensor. The fluorine supply pipe 1302 is sequentially equipped with a filter, a manual valve, a filter, a pressure sensor, and a pneumatic valve. The special gas supply pipe 1303 is sequentially equipped with a filter, a manual valve, a filter, a pressure regulating valve, a pressure sensor, and a pneumatic valve. The third nitrogen branch air supply pipe 1304, the fourth nitrogen branch air supply pipe 1305, the first mixed gas branch air supply pipe 1308, the second mixed gas branch air supply pipe 1309, the third mixed gas branch air supply pipe 1310, and the fourth mixed gas branch air supply pipe 1311 are each equipped with pneumatic valves, and the fourth mixed gas supply pipe 1306 and the fifth mixed gas supply pipe 1307 are equipped with gas mass flow controllers.

[0051] Specifically, the second nitrogen supply pipe 1301, the fluorine supply pipe 1302, and the special gas supply pipe 1303 may be connected to a nitrogen source, a fluorine gas source, and a special gas source, respectively. Also, when the atmospheric pressure inside the chamber 110 is controlled by the low-pressure control device 180 to be in a low-pressure state, nitrogen, fluorine, and special gas may be supplied into the chamber 110 via the second nitrogen supply pipe 1301, the fluorine supply pipe 1302, and the special gas supply pipe 1303, respectively. Here, a portion of the nitrogen supplied by the second nitrogen supply pipe 1301 enters the fourth mixed gas supply pipe 1306 via the third nitrogen branch supply pipe 1304, and the fluorine supplied by the fluorine supply pipe 1302 enters the fourth mixed gas supply pipe 1306, where the nitrogen and fluorine are mixed. Another portion of the nitrogen supplied by the second nitrogen supply pipe 1301 enters the fifth mixed gas supply pipe 1307 through the fourth nitrogen branch supply pipe 1305, and the special gas supplied by the special gas supply pipe 1303 can enter the fifth mixed gas supply pipe 1307, where the nitrogen and special gas are mixed. The mixed nitrogen and fluorine then enter the sixth mixed gas supply pipe 1312 through the first mixed gas branch supply pipe 1308. Here, the mixed nitrogen and special gas enter the sixth mixed gas supply pipe 1312 via the third mixed gas branch supply pipe 1310. After the mixed gas is mixed in the sixth mixed gas supply pipe 1312, it enters the chamber 110 via the low-pressure injection pipe 150.

[0052] There, filters provided in the second nitrogen supply pipe 1301, the fluorine supply pipe 1302, and the special gas supply pipe 1303 can filter the gas in the pipelines in which they are located. Manual valves provided in the second nitrogen supply pipe 1301, the fluorine supply pipe 1302, and the special gas supply pipe 1303 can be opened and closed on the pipelines in which they are located to circulate the gas in the pipelines, or regulators provided in the second nitrogen supply pipe 1301, the fluorine supply pipe 1302, and the special gas supply pipe 1303 can adjust the pressure in the pipelines in which they are located, and pressure sensors provided in the second nitrogen supply pipe 1301, the fluorine supply pipe 1302, and the special gas supply pipe 1303 can detect the pressure in the pipelines in which they are located.

[0053] The gas mass flow controller installed in the fourth mixed gas supply pipe 1306 can perform precise measurement and mass / flow rate control of the mixed nitrogen and fluorine, and the gas mass flow controller installed in the fifth mixed gas supply pipe 1307 can perform precise measurement and mass / flow rate control of the mixed nitrogen and special gas. As a result, the flow rate of the gas used in the reaction in chamber 110 can be controlled within a very precise range, thereby allowing the reaction to proceed according to the set process parameters, improving product consistency and quality. For example, in the case of chemical vapor deposition in the manufacture of silicon wafers, by accurately controlling the mass flow rate of the reaction gas, the film deposited on the silicon wafer will have a uniform thickness and stable properties.

[0054] In some embodiments, the special gas supplied by the special gas supply pipe 1303 may be, for example, silane gas used in the reaction for depositing a thin film on a silicon wafer, depending on the actual situation, but is not limited thereto.

[0055] In some embodiments, as shown in Figures 8 and 10, the low-pressure jet pipe 150 is L-shaped, one end of which is connected to the low-pressure air supply device 130, and the other end of which is an air outlet 151 extending upward along the height direction of the chamber 110, with the low-pressure jet pipe 150 being lower in height than the lowest layer wafer in the chamber 110.

[0056] The low-pressure air supply device 130 can control the air pressure in the chamber 110 to a low-pressure state using components such as the main valve 1803 and the extraction pump 1807. The gas enters the chamber 110 through the low-pressure injection pipe 150, flows towards the upper end of the chamber 110, and flows downward to the exhaust end of the chamber 110. Therefore, by providing an "L"-shaped low-pressure injection pipe 150, the low-pressure injection pipe 150 can be used as a low-pressure intake device. Accordingly, by providing an "L"-shaped low-pressure injection pipe 150, the requirement for a low-pressure process for the mixed gas in the sixth mixed air supply pipe 1312 to enter the chamber 110 can be met.

[0057] It can be understood that all gases entering the exhaust gas treatment device 190 are recovered or removed under the operation of the exhaust gas treatment device 190, and harmful components of the gas can be reduced, so that the gas is treated and discharged in a manner that meets standards, thereby reducing air pollution.

[0058] In some embodiments, as shown in Figure 5, the exhaust gas treatment device 190 includes at least two exhaust gas treatment chambers 191, and can switch to another exhaust gas treatment chamber 191 if one exhaust gas treatment chamber 191 malfunctions.

[0059] Specifically, the two exhaust gas treatment chambers 191 can be connected by a pipe, and a three-way valve 192 is provided in the pipe. The two exhaust gas treatment chambers 191 can be automatically switched via this three-way valve 192, so that if one exhaust gas treatment chamber 191 malfunctions and stops, the system can switch to the other exhaust gas treatment chamber 191 to allow the exhaust gas treatment device 190 to operate normally.

[0060] In some embodiments, the furnace tube may also include a control component. This control component receives control operations from the user and, according to the control operations, controls the atmospheric pressure intake device 120 and atmospheric pressure control device 170 to be operational and controls the low-pressure supply device 130 and low-pressure control device 180 to be stopped, thereby enabling atmospheric pressure processing on the wafer in the furnace tube, or controls the atmospheric pressure intake device 120 and atmospheric pressure control device 170 to be stopped and controls the low-pressure supply device 130 and low-pressure control device 180 to be operational, thereby enabling low-pressure processing on the wafer in the furnace tube.

[0061] Here, the control components are not limited to these, but can also include operation panels, operation buttons, etc.

[0062] In some embodiments, when switching from low-pressure process processing to atmospheric-pressure process processing, first, a mixed gas of fluorine and nitrogen is continuously supplied to the chamber 110 via the low-pressure air supply device 130 to remove the film layer generated inside the chamber 110 during low-pressure process processing via fluorine. The chemical reaction equation can be as follows. Si + 2F2 → SiF4 (exothermic reaction)

[0063] Since the above reaction is an exothermic reaction, it is possible to determine whether the reaction has finished, and consequently whether the film layer inside the chamber 110 has been completely removed, by detecting the temperature inside the chamber 110. For example, a temperature sensor may be provided to detect the temperature inside the chamber 110. When the film layer inside the chamber 110 is completely removed, the temperature inside the chamber 110 decreases, and when the temperature sensor detects that the temperature inside the chamber 110 has fallen to a predetermined temperature or below, it indicates that the film layer inside the chamber 110 has been completely removed. Here, the predetermined temperature can be set according to the actual exothermic state of the chemical reaction, for example, the predetermined temperature can be 400°C or any other suitable temperature without limitation.

[0064] After it is detected that the membrane layer in chamber 110 has been completely removed, the low-pressure supply unit 130 stops supplying gas to chamber 110, activates the atmospheric pressure intake unit 120 to pass nitrogen through chamber 110, and changes the low-pressure environment in chamber 110 to an atmospheric pressure state. Then, the atmospheric pressure control unit 170 is activated to maintain chamber 110 at an atmospheric pressure state, thereby completing the switch from low-pressure process processing to atmospheric pressure process processing. At the same time, when the furnace tube is switched from low-pressure process mode to atmospheric pressure process mode, backflow of gas in the exhaust pipe into chamber 110 and contamination are avoided.

[0065] A further aspect of the present invention provides a method for using a furnace tube in which atmospheric pressure processing is performed on a wafer in a chamber, with the atmospheric pressure supply device and atmospheric pressure control device being kept in an operational state and the low pressure supply device and low pressure control device being kept in a stopped state.

[0066] If the furnace tube can be implemented as described above, refer to the above explanation and therefore will not be explained again in this specification.

[0067] In some embodiments, the process of controlling the working environment inside the chamber to switch from a low-pressure environment to an atmospheric-pressure environment includes the steps of: controlling a low-pressure intake device to pass a mixed gas of fluorine and nitrogen through the chamber to completely remove the film layer formed on the inside of the chamber wall; stopping the controlled low-pressure intake device and low-pressure control device, starting an atmospheric-pressure intake device to pass nitrogen through and convert the chamber from a low-pressure environment to an atmospheric-pressure state; and starting an atmospheric-pressure control device.

[0068] According to yet another aspect of the present invention, a method of using a furnace tube is provided in which a low-pressure intake device and a low-pressure control device are kept in an operational state, and an atmospheric pressure supply device and an atmospheric pressure control device are kept in a stopped state, and a low-pressure process is performed on a wafer in the chamber.

[0069] Here, the furnace tube can be realized as a furnace tube as described above, and this will not be explained again in this specification as it can be seen in the explanation above.

[0070] As described above, according to the furnace tube and method of using the furnace tube according to the embodiment of the present application, by providing an atmospheric pressure intake device that supplies air to the chamber and an atmospheric pressure control device that controls the air pressure inside the chamber, atmospheric pressure processing of wafers can be performed, and by providing a low-pressure intake device that supplies air to the chamber and a low-pressure air pressure control device that controls the air pressure inside the chamber, low-pressure processing of wafers can be performed, thus enabling compatibility between atmospheric pressure processing and low-pressure processing with a single furnace tube.

[0071] While exemplary embodiments have been described herein with reference to the accompanying drawings, it should be understood that these exemplary embodiments are merely illustrative and not intended to limit the scope of the Application. Those skilled in the art can make various changes and modifications without departing from the scope and spirit of the Application. All such changes and modifications are intended to fall within the scope of the Application as required by the appended claims.

[0072] Similarly, in order to make the present application concise and to facilitate the understanding of one or more aspects of the present application, it should be understood that in the description of exemplary embodiments, features of the present application may, in some cases, be grouped together in a single embodiment, figure, or description thereof. However, the methods of the present application should not be interpreted as requiring many more features than those explicitly stated in each claim. More precisely, as reflected in the corresponding claims, the essence of the present application is that the corresponding technical problem can be solved with fewer features than all the features contained in a single disclosed embodiment. Thus, the claims according to a particular embodiment are explicitly incorporated into that particular embodiment, and each claim is positioned as an independent embodiment of the present application in itself.

[0073] Furthermore, those skilled in the art will understand that any combination of features from different embodiments, even if some embodiments described herein include some features included in other embodiments and others do not, falls within the scope of this application and constitutes a different embodiment. For example, any one of the embodiments for which protection is sought may be used in any combination within the claims.

[0074] The embodiments described above are illustrative and not limiting to the present invention, and it should be noted that a person skilled in the art can devise alternative embodiments without departing from the scope of the appended claims. Reference numerals in parentheses within the claims should not be construed as limiting the scope of the claims. The use of terms such as "first," "second," and "third" does not indicate any order; these terms can be interpreted as names.

Claims

1. A chamber for processing wafers, A normal pressure intake means and a low pressure intake means for supplying air to the chamber, wherein the normal pressure intake means and the low pressure intake means are each independently connected to the chamber. A normal pressure control means and a low pressure control means for controlling the air pressure in the chamber, wherein the normal pressure control means and the low pressure control means each independently control the air pressure in the chamber. A normal pressure nozzle is placed inside the chamber and connected to the normal pressure intake means, A low-pressure injection pipe is placed inside the chamber and connected to the low-pressure intake means, A furnace tube equipped with a furnace tube.

2. The chamber comprises an intake end and an exhaust end, The atmospheric pressure intake means is connected to the atmospheric pressure injection pipe via the intake end, The low-pressure intake means is connected to the low-pressure injection pipe via the intake end, The atmospheric pressure control means and the low pressure control means are each connected to the exhaust end. The furnace tube according to claim 1.

3. The low-pressure control means is A first main exhaust pipe, a first branch exhaust pipe, a second branch exhaust pipe, and a second main exhaust pipe providing a gas passage, wherein the intake end of the first main exhaust pipe is connected to the exhaust end, the intake end of the first branch exhaust pipe and the intake end of the second branch exhaust pipe are each connected to the exhaust end of the first main exhaust pipe, and the exhaust end of the first branch exhaust pipe and the exhaust end of the second branch exhaust pipe are each connected to the intake end of the second main exhaust pipe. A main valve for controlling the air pressure inside the chamber when the chamber is in a process state, wherein the main valve is provided in the first branch exhaust pipe, A bypass valve for controlling the pressure inside the chamber when the chamber is in a non-processing state, wherein the bypass valve is provided in the second branch exhaust pipe, An extraction pump for extracting gas from inside the chamber, wherein one end of the extraction pump is connected to the exhaust end of the second main exhaust pipe, and the other end is connected to an exhaust gas treatment means. A furnace tube according to claim 2, comprising the above.

4. The aforementioned atmospheric pressure control means is The system comprises a third main exhaust pipe, a mixing drain pipe, a drain pipe, a first branch exhaust pipe, a second branch exhaust pipe, a third branch exhaust pipe, and a fourth branch exhaust pipe, wherein the exhaust end of the third main exhaust pipe is connected to one end of a condenser, the other end of the condenser is connected to the inlet of the mixing drain pipe, the outlet of the mixing drain pipe is connected to the inlet of the drain pipe, and to the intake ends of the first branch exhaust pipe, the second branch exhaust pipe, the third branch exhaust pipe, and the fourth branch exhaust pipe, respectively, and the exhaust ends of the first branch exhaust pipe, the second branch exhaust pipe, the third branch exhaust pipe, and the fourth branch exhaust pipe are connected to exhaust gas treatment means. The drain pipe is equipped with a water tank and a pneumatic valve, the first branch exhaust pipe is equipped with a pneumatic valve and an absolute pressure control valve, the second branch exhaust pipe is equipped with a pneumatic valve and a relative pressure control valve, the third branch exhaust pipe is equipped with an automatic valve and a check valve, and the fourth branch exhaust pipe is equipped with a pneumatic valve. The relative pressure control valve is used to control the air pressure inside the chamber when the temperature inside the chamber is higher than the first set temperature. The absolute pressure control valve is used to control the air pressure inside the chamber when the temperature inside the chamber is below the first set temperature. The furnace tube according to claim 2.

5. The atmospheric pressure injection pipe comprises a main body portion extending in the height direction of the chamber and a connecting portion connected to the atmospheric pressure intake means. Multiple nozzles are uniformly provided on the main body. The intake end is located at the bottom of the chamber, The dimensions of the nozzle increase in proportion to the increase in the distance between the nozzle and the intake end, so that the dimensions of the nozzle become larger as it moves further away from the intake end. The height of the uppermost nozzle is greater than or equal to the height of the uppermost wafer in the chamber. The furnace tube according to claim 2.

6. The low-pressure nozzle is L-shaped, One end of the low-pressure injection pipe is connected to the low-pressure intake means, The other end of the low-pressure injection pipe is an air outlet, which extends upward in the height direction of the chamber. The height of the low-pressure injection pipe is lower than the height of the wafer at the lowest end of the chamber. The furnace tube according to claim 2.

7. The aforementioned atmospheric pressure intake means is It comprises a first nitrogen supply pipe, an oxygen supply pipe, a hydrogen supply pipe, a first mixed gas supply pipe, a second mixed gas supply pipe, and a third mixed gas supply pipe. The exhaust end of the first nitrogen supply pipe is connected to the intake ends of the first nitrogen branch supply pipe and the second nitrogen branch supply pipe, respectively; the exhaust ends of the first nitrogen branch supply pipe and the oxygen supply pipe are connected to the intake ends of the first mixed gas supply pipe, respectively; the exhaust ends of the second nitrogen branch supply pipe and the hydrogen supply pipe are connected to the intake ends of the second mixed gas supply pipe, respectively; the exhaust ends of the first mixed gas supply pipe and the second mixed gas supply pipe are connected to the intake ends of the third mixed gas supply pipe, respectively; and the exhaust end of the third mixed gas supply pipe is connected to the intake end of the atmospheric pressure injection pipe. The first nitrogen supply pipe, the oxygen supply pipe, and the hydrogen supply pipe are each equipped with a filter, a manual valve, a pressure regulating valve, and a pressure sensor in that order, and the hydrogen supply pipe is further equipped with a pneumatic valve located after the pressure sensor, and the first nitrogen branch supply pipe and the second nitrogen branch supply pipe are each equipped with a pneumatic valve, The first mixed gas supply pipe and the second mixed gas supply pipe are each equipped with a gas mass flow controller and a pneumatic valve, and the third mixed gas supply pipe is equipped with an igniter. The furnace tube according to claim 1.

8. The low-pressure intake means is It comprises a second nitrogen supply pipe, a fluorine gas supply pipe, a special gas supply pipe, a fourth mixed gas supply pipe, a fifth mixed gas supply pipe, a sixth mixed gas supply pipe, a first mixed gas branch supply pipe, a second mixed gas branch supply pipe, a third mixed gas branch supply pipe, and a fourth mixed gas branch supply pipe. The exhaust end of the second nitrogen supply pipe is connected to the intake ends of the third and fourth nitrogen branch supply pipes, respectively; the exhaust ends of the third nitrogen branch supply pipe and the fluorine supply pipe are connected to the intake ends of the fourth mixed gas supply pipe, respectively; the exhaust ends of the fourth nitrogen branch supply pipe and the special gas supply pipe are connected to the intake ends of the fifth mixed gas supply pipe, respectively; and the exhaust end of the fourth mixed gas supply pipe is connected to the intake ends of the first and second mixed gas branch supply pipes, respectively. Furthermore, the exhaust end of the fifth mixed gas supply pipe is connected to the intake ends of the third mixed gas branch supply pipe and the fourth mixed gas branch supply pipe, respectively; the exhaust ends of the first mixed gas branch supply pipe and the third mixed gas branch supply pipe are connected to the intake ends of the sixth mixed gas supply pipe, respectively; the exhaust end of the sixth mixed gas supply pipe is connected to the intake end of the low-pressure injection pipe; and the exhaust ends of the second mixed gas branch supply pipe and the fourth mixed gas branch supply pipe are connected to the second main exhaust pipe, respectively. The second nitrogen supply pipe is equipped with a filter, a manual valve, a pressure regulating valve, and a pressure sensor in that order; the fluorine supply pipe is equipped with a filter, a manual valve, a filter, a pressure sensor, and a pneumatic valve in that order; the special gas supply pipe is equipped with a filter, a manual valve, a filter, a pressure regulating valve, a pressure sensor, and a pneumatic valve in that order; the third nitrogen branch supply pipe, the fourth nitrogen branch supply pipe, the first mixed gas branch supply pipe, the second mixed gas branch supply pipe, the third mixed gas branch supply pipe, and the fourth mixed gas branch supply pipe are each equipped with a pneumatic valve; and the fourth mixed gas supply pipe and the fifth mixed gas supply pipe are each equipped with a gas mass flow controller. The furnace tube according to claim 3.

9. The furnace tube according to claim 3 or 4, wherein the exhaust gas treatment means comprises at least two exhaust gas treatment chambers, and can be switched to the other exhaust gas treatment chamber if one of the exhaust gas treatment chambers malfunctions.

10. A method for using a furnace tube according to claim 1, A step of performing atmospheric pressure process processing on a wafer in the chamber, while maintaining the atmospheric pressure intake means and the atmospheric pressure control means in an operating state and maintaining the low-pressure intake means and the low-pressure control means in a stopped state. Instructions for use, including those mentioned above.

11. The process of controlling the working environment inside the chamber to switch from a low-pressure environment to an atmospheric-pressure environment is as follows: The steps include controlling the low-pressure intake means to introduce a mixed gas of fluorine and nitrogen into the chamber and completely removing the film layer formed on the inner wall of the chamber, The steps include: stopping the control of the low-pressure intake means and the low-pressure control means, activating the atmospheric pressure intake means, introducing nitrogen, and changing the environment inside the chamber from a low-pressure environment to an atmospheric pressure environment; The steps include: activating the atmospheric pressure control means, The method of use according to claim 10, including the method of use described in claim 10.

12. A method for using a furnace tube according to claim 1, The low-pressure intake means and the low-pressure control means are kept in an operating state, and the normal-pressure intake means and the normal-pressure control means are kept in a stopped state, and low-pressure process processing is performed on the wafer in the chamber. How to use.

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