Light-emitting device

Abstract

The present invention provides a light-emitting device having a semiconductor laser element with wires provided over a wide area. [Solution] The semiconductor laser element 20 comprises a plurality of wires 30 connected to the upper surface, a lens 40 having an incident surface facing the end face of the semiconductor laser element, a support member for supporting the lens, and a joining member for joining the support member and the lens. The support member includes a first portion 51 and a second portion 52 positioned on the side of the semiconductor laser element, sandwiching the semiconductor laser element, and a third portion 53 positioned between them, which in a top view overlaps with a portion including the end face of the semiconductor laser element. The support member has a recess 50r formed by the first portion, the second portion and the third portion, and the recess is formed to be recessed inward from the side of a first ridge formed by the intersection of the upper surface of the first portion and the side surface of the first portion, and a second ridge formed by the intersection of the upper surface of the second portion and the side surface of the second portion.

Description

Technical Field

[0001] The present disclosure relates to a light-emitting device.

Background Art

[0002] Patent Document 1 discloses a light-emitting device including a submount having an upper surface, a semiconductor laser element provided on the upper surface of the submount and having an end face that emits laser light, and a support member that supports a lens disposed to face the end face of the semiconductor laser element. The support member includes a portion that overlaps a part of the semiconductor laser element in a top view.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present disclosure is to provide a light-emitting device having a semiconductor laser element provided with wires over a wide range.

Means for Solving the Problems

[0005] A light-emitting device according to one embodiment of the present disclosure comprises a submount having an upper surface, a semiconductor laser element disposed on the upper surface of the submount and having an upper surface and an end surface for emitting laser light, a plurality of wires connected to the upper surface of the semiconductor laser element, a lens having an incident surface facing the end surface of the semiconductor laser element, a support member for supporting the lens, and a joining member for joining the support member and the lens, wherein the support member is located to the side of the semiconductor laser element and has a first part and a second part disposed on either side of the semiconductor laser element, and is disposed between the first part and the second part, and in a top view, the semiconductor laser element The support member includes a third portion that overlaps with a portion including an end face, and the first portion has an upper surface, a support surface facing the lens, and a side surface provided on the opposite side of the support surface, and the second portion has an upper surface, a support surface facing the lens, and a side surface provided on the opposite side of the support surface, and the support member has a recess formed by the first portion, the second portion and the third portion, and the recess is formed to be recessed inward from the side of a first ridge line formed by the intersection of the upper surface of the first portion and the side surface of the first portion, and a second ridge line formed by the intersection of the upper surface of the second portion and the side surface of the second portion. [Effects of the Invention]

[0006] According to one embodiment of the present disclosure, a light-emitting device can be provided having a semiconductor laser element with wires provided over a wide area. [Brief explanation of the drawing]

[0007] [Figure 1] This is a schematic top view showing a light-emitting device according to the first embodiment. [Figure 2] This is a schematic perspective view showing the light-emitting device according to the first embodiment. [Figure 3] This is a schematic rear view showing the light-emitting device according to the first embodiment. [Figure 4] This is a schematic top view showing the support member of the light-emitting device according to the first embodiment. [Figure 5] This is a schematic cross-sectional view illustrating an example of the effects achieved by the light-emitting device according to the first embodiment. [Figure 6] This is a schematic top view showing a light-emitting device according to the second embodiment. [Figure 7] This is a schematic perspective view showing the light-emitting device according to the second embodiment. [Figure 8] This is a schematic top view showing the support member of the light-emitting device according to the second embodiment. [Figure 9] This is a schematic top view showing a light-emitting device according to the third embodiment. [Figure 10] This is a schematic perspective view showing the light-emitting device according to the third embodiment. [Figure 11] This is a schematic top view showing a light-emitting device according to the fourth embodiment. [Figure 12] Figure 11 is a schematic cross-sectional view showing a cross-section of the light-emitting device cut along the line XII-XII. [Figure 13] This is a schematic top view showing the support member of the light-emitting device according to the fourth embodiment. [Figure 14] This is a schematic top view showing a modified light-emitting device. [Modes for carrying out the invention]

[0008] The light-emitting device according to the embodiments of this disclosure will be described in detail below with reference to the drawings. However, the embodiments shown below are illustrative of light-emitting devices that embody the technical concept of the embodiments and are not limited thereto. Furthermore, the dimensions, materials, shapes, relative arrangements, etc. of the components described in the embodiments are not intended to limit the scope of this disclosure unless otherwise specified, but are merely illustrative examples. Note that the size, positional relationships, etc. of the components shown in each drawing may be exaggerated for clarity of explanation. In addition, in the following description, the same name and reference numerals indicate the same or similar components, and detailed explanations will be omitted as appropriate. In some cases, end view diagrams showing only the cross-section may be used as cross-sectional views.

[0009] In the diagrams shown below, directions may be indicated by the X, Y, and Z axes. The X, Y, and Z axes are mutually orthogonal. In this specification, the direction in which the arrow points in the X-axis direction is referred to as the +X direction or +X side, and the opposite direction of the +X direction is referred to as the -X direction or -X side. The +X direction or +X side may be referred to as the "front". The -X direction or -X side may be referred to as the "rear". In addition, among the sides of an object, the surface viewed from the +X direction or +X side in the X-axis direction may be referred to as the "front". The surface viewed from the -X direction or -X side may be referred to as the "back". In the Y-axis direction, the direction in which the arrow points is referred to as the +Y direction or +Y side, and the opposite direction of the +Y direction is referred to as the -Y direction or -Y side. In the Z-axis direction, the direction in which the arrow points is referred to as the +Z direction or +Z side, and the opposite direction of the +Z direction is referred to as the -Z direction or -Z side. The +Z direction or +Z side may be referred to as the "up". The -Z direction or -Z side is sometimes referred to as "downward." In the Z-axis direction, the surface of an object viewed from the +Z direction or +Z side is called the "top surface," and the surface of an object viewed from the -Z direction or -Z side is called the "bottom surface."

[0010] In this specification, "top view" means viewing the object from the +Z direction or the +Z side. However, these are for illustrative purposes only and do not restrict the orientation of the light-emitting device when it is in use. The orientation of the light-emitting device is arbitrary. In the embodiments shown below, "parallel" to the X, Y, and Z axes includes the object having an inclination within ±5° of these axes. In the embodiments, "orthogonal" or "perpendicular" includes an error of ±5° from 90°.

[0011] In this disclosure, unless otherwise specified, polygons such as rectangles shall be referred to as polygons, including shapes with rounded corners, chamfers, bevels, or other processing applied to their corners. Furthermore, shapes with processing applied not only to the corners (ends of the sides) but also to the middle parts of the sides shall also be referred to as polygons. In other words, shapes that retain a polygonal base but have undergone partial processing shall be included in the interpretation of "polygon" as described in this disclosure.

[0012] The same applies to terms representing specific shapes such as trapezoids, circles, concavities and convexities, and terms related to each side forming the shape. That is, even if a corner or an intermediate portion is processed on a certain side or circumference, the processed portion is included in the interpretation of "side" or "circumference".

[0013] Also, "arranging" is not limited to the case of direct contact, but includes cases where it is arranged indirectly, for example, via other members.

[0014] [First Embodiment] Referring to FIGS. 1 to 5, a configuration example of a light-emitting device 1 according to the first embodiment will be described. FIG. 1 is a top view schematically showing the light-emitting device 1 according to the first embodiment. FIG. 2 is a perspective view schematically showing the light-emitting device 1 according to the first embodiment. FIG. 3 is a rear view schematically showing the light-emitting device 1 according to the first embodiment. FIG. 4 is a top view schematically showing a support member 50 included in the light-emitting device 1. FIG. 5 is a schematic cross-sectional view for explaining an example of an effect exhibited by the light-emitting device 1. In FIGS. 2, 3, and 5, the package 70 included in the light-emitting device 1 is omitted. In FIGS. 3 and 5, the protection element 80 included in the light-emitting device 1 is omitted. In FIG. 4, the constituent members located near the support member 50 are shown by broken lines. In FIG. 5, the wires 30 other than the wire 30 located closest to the support member 50 among the plurality of wires 30 are omitted. The cross-section shown in FIG. 5 is a cross-section cut along a line corresponding to the V-V line in FIG. 1.

[0015] As shown in FIGS. 1 to 3, the light-emitting device 1 includes a submount 10, a semiconductor laser element 20, a plurality of wires 30, a lens 40, a support member 50, and bonding members 421a and 421b. In the example shown in FIGS. 1 to 3, the light-emitting device 1 further includes a package 70, lead terminals 75a and 75b, other wires 35, support substrates 18 and 19, and a protection element 80. Note that the light-emitting device 1 may have a wiring pattern provided on the package 70 instead of the lead terminals 75a and 75b.

[0016] Package 70 houses various components such as the submount 10, semiconductor laser element 20, multiple wires 30, lens 40, support member 50, and joining members 421a and 421b. Package 70 has a front wall 71 (wall on the +X side), a back wall 72 (wall on the -X side), two side walls 73, a bottom wall 74, and a lid (not shown). The lid can be formed, for example, using sapphire as the main material. The front wall 71, back wall 72, side walls 73, bottom wall 74, and lid of package 70 form an internal space 70S that houses the various components such as the submount 10, semiconductor laser element 20, multiple wires 30, lens 40, support member 50, and joining members 421a and 421b. The internal space 70S may be formed in an hermetically sealed state. The internal space 70S is hermetically sealed, which prevents organic matter and other particles from accumulating on the front surface 22 of the semiconductor laser element 20. A light-transmitting window 75 that allows laser light emitted from the semiconductor laser element 20 to pass through is provided in the front wall 71. Through holes (not shown) for inserting lead terminals 75a and 75b are provided in the back wall 72.

[0017] Each of the lead terminals 75a and 75b is electrically connected to an external power supply. A portion of the front side of the lead terminals 75a and 75b passes through a through-hole in the back wall 72 of the package 70 and is located in the internal space 70S. Each of the multiple wires 30 is a thin conductive wire that electrically connects the lead terminal 75a to the upper surface 21 of the semiconductor laser element 20. The other wire 35 is a thin conductive wire that electrically connects the lead terminal 75b to the upper surface 11 of the submount 10.

[0018] As shown in Figure 2, the support substrate 18 supports the submount 10. The support substrate 19 supports the support substrate 18. Each of the support substrates 18 and 19 is a substrate made of a material with excellent heat dissipation properties, such as SiN, AlN, SiC, and Cu.

[0019] The protection element 80 is, for example, an element for protecting the semiconductor laser element 20 from excessive voltage (excessive current) that may be applied from the lead terminal 75a. The protection element 80 is, for example, a Zener diode that becomes energized when a voltage above a specified voltage is applied. In the example shown in Figure 1, the protection element 80 is located on the upper surface 11 of the submount 10.

[0020] <Submount 10> The submount 10 has a top surface 11, a bottom surface located opposite the top surface 11 in the Z-axis direction, a front surface, a back surface, and two side surfaces. The front surface, back surface, and two side surfaces of the submount 10 are connected to the top surface 11 and the bottom surface, respectively. In the example shown in Figure 1, the submount 10 has a rectangular outline extending in the X-axis direction when viewed from above. However, the shape of the submount 10 when viewed from above is not limited to a rectangle.

[0021] The submount 10 supports the semiconductor laser element 20. Examples of materials that make up the submount 10 include ceramics such as SiN, AlN, and SiC, as well as metals such as Cu. In the examples shown in Figures 1 to 3, the submount 10 is made of AlN. A conductive film 15, such as gold-tin (AuSn), is placed between the upper surface 11 of the submount 10 and the lower surface of the semiconductor laser element 20. The upper surface 11 of the submount 10 and the lower surface of the semiconductor laser element 20 are joined via the conductive film 15.

[0022] <Semiconductor laser element 20> The semiconductor laser element 20 is positioned on the upper surface 11 of the submount 10. The semiconductor laser element 20 also has an upper surface 21, a lower surface located opposite the upper surface 21 in the Z-axis direction, a front surface 22, a back surface, and two side surfaces. The front surface 22, back surface, and two side surfaces of the semiconductor laser element 20 are connected to the upper surface 21 and the lower surface, respectively. The front surface 22 of the semiconductor laser element 20 corresponds to the end surface from which the laser light is emitted. Hereinafter, the front surface 22 of the semiconductor laser element 20 will be referred to as the "end surface 22". As shown in Figures 1 and 2, the end surface 22 faces the lens 40.

[0023] The semiconductor laser element 20 includes a semiconductor stacked structure in which, for example, an n-type substrate, an n-type cladding layer, an active layer, and a p-type cladding layer are stacked in this order in the Z-axis direction. The semiconductor laser element 20 may be placed on the upper surface of the submount 10 with the p-type cladding layer facing downwards, for example. Of the semiconductor layers constituting the semiconductor stacked structure, the p-type cladding layer located at the bottom of the semiconductor stacked structure is placed directly or indirectly on the conductive film 15.

[0024] A conductive film, made of, for example, a metal material, is provided on the upper surface 21 of the semiconductor laser element 20. Among the semiconductor layers constituting the semiconductor stacked structure, the n-type substrate located at the top of the semiconductor stacked structure is electrically connected to each of the multiple wires 30 via the conductive film provided on the upper surface 21 of the semiconductor laser element 20. As a result, current flowing from an external power supply through the lead terminals 75a and each of the multiple wires 30 is injected into the semiconductor stacked structure from the upper surface 21.

[0025] The end face 22 of the semiconductor laser element 20 includes the front surface of the active layer. When current is injected into the semiconductor laser element 20, laser light is emitted from the end face 22, which includes the front surface of the active layer. The laser light emitted from the end face 22 of the semiconductor laser element 20 is then emitted to the outside through the lens 40 and the light-transmitting window 75.

[0026] The laser light emitted from the end face 22 of the semiconductor laser element 20 has a broadened shape and forms an elliptical far-field pattern (hereinafter referred to as "FFP") on a plane parallel to the end face 22. Here, FFP refers to the shape and light intensity distribution of the light at a position away from the end face 22. In this light intensity distribution, 1 / e is applied to the peak intensity value of the beam. 2 Light with the above intensity is defined as the main part of the light. e is the base of the natural logarithm.

[0027] In the elliptical shape of the FFP, the major axis is parallel to the stacking direction of the semiconductor stacked structure, and the minor axis is parallel to the direction in which the end face 22 extends. The direction in which the end face 22 extends is defined as the horizontal direction of the FFP, and the stacking direction is defined as the vertical direction of the FFP. Furthermore, based on the light intensity distribution of the FFP, the angle corresponding to the full width at half maximum of the light intensity distribution is defined as the divergence angle of the laser beam emitted from the end face 22 of the semiconductor laser element 20. The vertical and horizontal axes of the FFP are defined as the velocity axis and the slow axis, respectively.

[0028] Each semiconductor layer constituting the semiconductor stacked structure in the semiconductor laser element 20 is, for example, In X Al Y Ga 1-X-Y It is composed of nitride-based semiconductors such as N(0≦X, 0≦Y, X+Y≦1). However, each semiconductor layer constituting the semiconductor stack structure in the semiconductor laser element 20 may be composed of a semiconductor other than the nitride-based semiconductor. For example, each semiconductor layer may be composed of a phosphide-based semiconductor or an arsenide-based semiconductor.

[0029] The semiconductor laser element 20 has a rectangular shape extending in the X-axis direction when viewed from above. The length of the semiconductor laser element 20 in the X-axis direction (the distance in the X-axis direction from the end face 22 to the back face of the semiconductor laser element 20) is, for example, 1000 μm or more and 10000 μm or less.

[0030] <Multiple wires 30> Each of the multiple wires 30 is connected to the upper surface 21 of the semiconductor laser element 20. The multiple wires 30 are arranged on the upper surface 21 of the semiconductor laser element 20, for example, spaced apart in the X-axis direction. That is, the junctions 31 between each wire 30 and the upper surface 21 of the semiconductor laser element 20 are arranged in a row in the X-axis direction. Examples of materials that make up the multiple wires 30 include gold (Au), silver (Ag), copper (Cu), aluminum (Al), and tungsten (W). The diameter of the multiple wires 30 is preferably, for example, 20 μm or more and 70 μm or less. This range allows for efficient current injection into the semiconductor laser element 20.

[0031] <Lens 40> The lens 40 has an incident surface 41 facing the end face 22 of the semiconductor laser element 20. The incident surface 41 is a plane parallel to the YZ plane. The lens 40 also has an exit surface 42 on the opposite side of the incident surface 41 in the X-axis direction. The exit surface 42 is, for example, a part of a cylindrical surface. Laser light emitted from the end face 22 of the semiconductor laser element 20 enters the lens 40 from the incident surface 41 and exits to the outside of the lens 40 from the exit surface 42.

[0032] In the example shown in Figure 2, the lens 40 has a collimating portion 40a and an extending portion 40b. However, the lens 40 may be a lens having only a collimating portion 40a, such as a cylindrical lens. Also, the lens 40 may be a lens with a shape different from that of a cylindrical lens.

[0033] The collimating portion 40a is positioned opposite the end face 22 of the semiconductor laser element 20. The collimating portion 40a has curvature in the XZ plane and extends uniformly along the Y axis. The collimating portion 40a collimates the velocity axis component of the laser light emitted from the semiconductor laser element 20. Here, in this specification, "collimating" means not only making the laser light parallel, but also reducing the divergence angle of the laser light.

[0034] The extended portion 40b is a flat plate-shaped portion that is continuous with the +Z side end of the collimating portion 40a and extends in the Z-axis direction. The extended portion 40b faces the support member 50. Bonding films 60a and 60b may be provided on the surface of the extended portion 40b facing the support member 50 (the -X side surface). In the example shown in Figure 2, the bonding film 60a faces the bonding member 421a. The bonding film 60b faces the bonding member 421b. The extended portion 40b is joined to the support member 50 via the bonding films 60a and 60b and the bonding members 421a and 421b.

[0035] The lens 40 is made of a translucent material such as glass, quartz, synthetic quartz, sapphire, and translucent ceramic.

[0036] <Support member 50> The support member 50 supports the lens 40. The support member 50 is located on the -X side of the lens 40. That is, the front surface of the support member 50 and the incident surface 41 of the lens 40 face each other. The support member 50 is also positioned on the upper surface 11 of the submount 10 and extends in the Y-axis direction so as to straddle the semiconductor laser element 20. Below the support member 50, a space 50s is provided that penetrates in the X-axis direction. A portion of the front side of the semiconductor laser element 20, including the end face 22, is located inside the space 50s.

[0037] The support member 50 is positioned so as to overlap with the end face 22 of the semiconductor laser element 20 and a portion of the front surface of the submount 10 when viewed from above. That is, when viewed from above, the support member 50 overlaps with a portion of the front side of the semiconductor laser element 20 and a portion of the front side of the submount 10. The support member 50 supports the lens 40 via bonding members 421a and 421b provided on the front surface of the support member 50. The lens 40 supported by the support member 50 faces the end face 22 of the semiconductor laser element 20.

[0038] Examples of materials that make up the support member 50 include AlN, SiC, copper tungsten (CuW), aluminum oxide, glass, and silicon (Si).

[0039] The support member 50 has a first portion 51, a second portion 52, and a third portion 53. The first portion 51 and the second portion 52 are positioned to the side of the semiconductor laser element 20, sandwiching the semiconductor laser element 20. In the example shown in Figure 1, the first portion 51 is positioned on the upper surface 11 of the submount 10 and facing the +Y side of the semiconductor laser element 20. The second portion 52 is positioned on the upper surface 11 of the submount 10 and facing the -Y side of the semiconductor laser element 20.

[0040] As shown in Figure 4, the first part 51 has an upper surface 51u, a support surface 51a1 that supports the lens 40, and a side surface 51b1 that is provided on the opposite side of the support surface 51a1 in the X-axis direction. The upper surface 51u constitutes a part of the upper surface of the support member 50. That is, the upper surface 51u may be the surface located at the very top of the support member 50. The upper surface 51u is located between the support surface 51a1 and the side surface 51b1 in the X-axis direction.

[0041] The support surface 51a1 constitutes a part of the front surface of the support member 50. A connecting member 421a is provided on the support surface 51a1. The side surface 51b1 constitutes a part of the back surface of the support member 50. Both the support surface 51a1 and the side surface 51b1 intersect with the top surface 51u. A ridge line 51r1 is formed as the line where the top surface 51u and the side surface 51b1 intersect. Also, a ridge line 51r2 is formed as the line where the top surface 51u and the support surface 51a1 intersect. For the sake of explanation, ridge line 51r1 will be referred to as the "first ridge line 51r1" and ridge line 51r2 as the "third ridge line 51r2".

[0042] As shown in Figure 4, the second portion 52 has an upper surface 52u, a support surface 52a1 that supports the lens 40, and a side surface 52b1 that is provided on the opposite side of the support surface 52a1 in the X-axis direction. The upper surface 52u constitutes a part of the upper surface of the support member 50. That is, the upper surface 52u may be the surface located at the very top of the support member 50. The upper surface 52u is located between the support surface 52a1 and the side surface 52b1 in the X-axis direction.

[0043] The support surface 52a1 constitutes a part of the front surface of the support member 50. A connecting member 421b is provided on the support surface 52a1. The side surface 52b1 constitutes a part of the back surface of the support member 50. Both the support surface 52a1 and the side surface 52b1 intersect with the top surface 52u. A ridge line 52r1 is formed as the line where the top surface 52u and the side surface 52b1 intersect. Also, a ridge line 52r2 is formed as the line where the top surface 52u and the support surface 52a1 intersect. For the sake of explanation, ridge line 52r1 will be referred to as the "second ridge line 52r1" and ridge line 52r2 as the "fourth ridge line 52r2".

[0044] The third portion 53 is a member provided on the upper part of a portion (a portion on the front side) of the semiconductor laser element 20, including the end face 22. In a top view, the third portion 53 overlaps with the portion (a portion on the front side) of the semiconductor laser element 20, including the end face 22. As shown in Figure 1, in a top view, the third portion 53 is positioned between the first portion 51 and the second portion 52, and is continuous with the first portion 51 and the second portion 52.

[0045] As shown in Figure 1, in a top view and in a direction perpendicular to the incident surface 41 of the lens 40 (the X-axis direction in Figure 1), the length W1 of the overlapping portion between the semiconductor laser element 20 and the third portion 53 is preferably 200 μm or more and 500 μm or less. If the length W1 of the overlapping portion between the semiconductor laser element 20 and the third portion 53 is less than 200 μm, the thickness of the third portion 53 in the X-axis direction is insufficient, which may relatively reduce the strength of the support member 50. On the other hand, if the length W1 of the overlapping portion between the semiconductor laser element 20 and the third portion 53 exceeds 500 μm, the area on the top surface 21 of the semiconductor laser element 20 where the wire 30 cannot be connected relatively increases. As a result, the voltage required to drive the semiconductor laser element 20 increases, which may reduce the injection efficiency of the current injected from the wire 30 to the semiconductor laser element 20 (hereinafter, "current injection efficiency").

[0046] As shown in Figure 4, the third portion 53 has an upper surface 53u, an opposing surface 53a1 facing the lens 40, and a side surface 53b1 provided on the opposite side of the opposing surface 53a1 in the X-axis direction. The upper surface 53u is located lower than the upper surface 51u of the first portion 51 and the upper surface 52u of the second portion 52 in the Z-axis direction. The upper surface 53u is located between the opposing surface 53a1 and the side surface 53b1 in the X-axis direction.

[0047] The opposing surface 53a1 constitutes a part of the front surface of the support member 50. The opposing surface 53a1 is located in the Y-axis direction between the support surface 51a1 of the first portion 51 and the support surface 52a1 of the second portion 52, and is continuous with the support surfaces 51a1 and 52a1. In the example shown in Figure 4, the opposing surface 53a1 is not provided with a joining member similar to the joining members 421a and 421b. However, the opposing surface 53a1 may also be provided with a joining member similar to the joining members 421a and 421b. That is, the support member 50 may support the lens 40 via the first portion 51, the second portion 52, and the third portion 53.

[0048] The side surface 53b1 constitutes a part of the back surface of the support member 50. In the Y-axis direction, the side surface 53b1 is located between the side surface 51b1 of the first portion 51 and the side surface 52b1 of the second portion 52, and is integrally formed with the side surfaces 51b1 and 52b1.

[0049] Here, the support member 50 has a recess 50r formed therein, defined by the first part 51, the second part 52, and the third part 53. The recess 50r is formed to recess inward from the side of the first ridge 51r1 of the first part 51 and the second ridge 52r1 of the second part 52. That is, the recess 50r is recessed in a diagonal downward direction between the +X side of the X-axis direction and the -Z side of the Z-axis direction, from the imaginary line 50L1 connecting the first ridge 51r1 and the second ridge 52r1 shown in Figure 4. Note that "diagonal downward direction between the +X side of the X-axis direction and the -Z side of the Z-axis direction" includes the direction toward the +X side and the direction toward the -Z side. The same applies to the direction in which the recesses 50ra, 50rb, and 50rc recess in the second embodiment and later described later. In the example shown in Figures 1 to 4, the recess 50r is formed to penetrate the region of the support member 50 above the third part 53 in the X-axis direction.

[0050] The upper surface 53u of the third portion 53 defines the lowest region of the recess 50r. As shown in Figure 3, in the direction perpendicular to the upper surface 11 of the submount 10 (Z-axis direction), the distance L1 from the upper surface 11 of the submount 10 to the first point P1 of the third portion 53 that is furthest from the upper surface 11 of the submount 10 (a point on the upper surface 53u in Figure 3) is shorter than the distance L2 from the upper surface 11 of the submount 10 to the second point P2 of the first portion 51 and second portion 52 that is furthest from the upper surface 11 of the submount 10 (points on the upper surfaces 51u and 52u in Figure 3).

[0051] Incidentally, when connecting each of the multiple wires 30 to the upper surface 21 of the semiconductor laser element 20, a bonding apparatus having a capillary 2 as shown in Figure 5 is used. The bonding apparatus melts the tip of the wire 30 led out from the capillary 2 to form an initial ball, and also propagates ultrasonic waves toward the lower end 2a of the capillary 2, for example, to press the tip of the wire 30 to the upper surface 21 of the semiconductor laser element 20.

[0052] As shown in Figure 5, when connecting the tip of the wire 30 to the upper surface 21 of the semiconductor laser element 20, the capillary 2 descends along the Z-axis from the upper side (+Z side) and approaches the upper surface 21 of the semiconductor laser element 20. The capillary 2 has a narrow lower end portion 2a and a main body portion 2b that is wider than the lower end portion 2a. Therefore, when the capillary 2 is brought close to the vicinity of the support member 50 on the upper surface 21 of the semiconductor laser element 20, the main body portion 2b of the capillary 2 and the support member 50 may come into contact. As a result, the downward movement of the capillary 2 is restricted in the vicinity of the support member 50, and it may not be possible to connect the wire 30 to the upper surface 21 of the semiconductor laser element 20. In other words, a region may be created on the upper surface 21 of the semiconductor laser element 20 near the support member 50 where the wire 30 cannot be joined. The support member 50J of the conventional light-emitting device does not have a recess formed inward from the ridge where the upper surface and back surface of the support member 50J intersect. Therefore, there was a possibility that the distance in the X-axis direction between the end face 22 of the semiconductor laser element 20 and the wire 30J closest to the support member 50J would increase.

[0053] In contrast, in the first embodiment, a recess 50r is formed in the support member 50 that is recessed inward from the side of the ridge where the upper surface and the back surface of the support member 50 intersect (the first ridge 51r1 where the upper surface 51u and the side surface 51b1 intersect, and the second ridge 52r1 where the upper surface 52u and the side surface 52b1 intersect). Furthermore, the recess 50r is formed in a position that overlaps with a part of the front side of the semiconductor laser element 20 when viewed from above. Therefore, even if the capillary 2 is brought close to the vicinity of the support member 50 on the upper surface 21 of the semiconductor laser element 20, the possibility of the capillary 2 and the support member 50 coming into contact can be reduced. As a result, the wire 30 (hereinafter referred to as "wire 30a") that is closest to the support member 50 among the multiple wires 30 can be placed closer to the end face 22 of the semiconductor laser element 20 than in the conventional configuration. Consequently, the section on the upper surface 21 of the semiconductor laser element 20 where the wires 30 are not connected can be reduced, and wires can be provided over a wide area of ​​the upper surface 21 of the semiconductor laser element 20. As a result, the voltage required to drive the semiconductor laser element 20 can be reduced, and the efficiency of current injection from the wire 30 to the semiconductor laser element 20 can be improved.

[0054] As shown in Figure 5, the distance W2 in the X-axis direction from the side surface 53b1 of the third portion 53 to the junction 31 between the wire 30a and the upper surface 21 of the semiconductor laser element 20 is preferably 50 μm or more and 200 μm or less. If the distance W2 in the X-axis direction between the side surface 53b1 of the third portion 53 and the junction 31 is less than 50 μm, there is a risk that the capillary 2 and the support member 50 will come into contact. Also, if the distance W2 in the X-axis direction between the side surface 53b1 of the third portion 53 and the junction 31 exceeds 200 μm, the distance between the end face 22 of the semiconductor laser element 20 and the wire 30a increases, and the area on the upper surface 21 of the semiconductor laser element 20 where the wire 30 cannot be connected relatively increases. As a result, the current injection efficiency into the semiconductor laser element 20 may decrease.

[0055] <Jointing members 421a, 421b> The joining members 421a and 421b are used to join the support member 50 and the lens 40. That is, the joining members 421a and 421b join the support member 50 and the lens 40. As shown in Figures 1 and 2, the joining member 421a is positioned between the first portion 51 of the support member 50 and the lens 40. The joining member 421b is positioned between the second portion 52 of the support member 50 and the lens 40.

[0056] In the examples shown in Figures 1 and 2, the joining members 421a and 421b are positioned at approximately the same location in a direction perpendicular to the upper surface 11 of the submount 10 (the Z-axis direction in Figures 1 and 2). Furthermore, the joining members 421a and 421b face each other at different positions on the extended portion 40b of the lens 40.

[0057] As shown in Figure 2, it is preferable that the upper ends 421u of the joining members 421a and 421b are higher than the first point P1 on the third portion 53 of the support member 50 in the direction perpendicular to the upper surface 11 of the submount 10 (the Z-axis direction in Figure 2). By having the upper ends 421u of the joining members 421a and 421b higher than the first point P1 on the third portion 53 of the support member 50, the area of ​​the joining members 421a and 421b can be increased. This ensures a sufficient contact area between the support member 50 and the lens 40. As a result, the support member 50 can firmly support the lens 40.

[0058] The joining members 421a and 421b are, for example, metals that melt when heated. In this case, the joining members 421a and 421b come into contact with the joining films 60a and 60b while molten, and then cool and solidify, thereby joining the support member 50 and the lens 40. Alternatively, the joining members 421a and 421b are metal films. In this case, an adhesive is applied to the surface of the joining members 421a and 421b, and the adhesive fixes the joining members 421a and 421b to the joining films 60a and 60b, thereby joining the support member 50 and the lens 40.

[0059] Examples of materials constituting the joining members 421a and 421b include metallic materials such as Au, Ag, Cu, Al, nickel (Ni), rhodium (Rh), titanium (Ti), platinum (Pt), palladium (Pd), molybdenum (Mo), chromium (Cr), and W, as well as alloy materials such as AuSn, SnCu, SnAg, and SnAgCu.

[0060] [Second Embodiment] Next, an example of the configuration of the light-emitting device 1A according to the second embodiment will be described with reference to Figures 6 to 8. Figure 6 is a schematic top view showing the light-emitting device 1A according to the second embodiment. Figure 7 is a schematic perspective view showing the light-emitting device 1A according to the second embodiment. Figure 8 is a schematic top view showing the support member 50A provided by the light-emitting device 1A. Note that in Figure 7, the package 70 provided by the light-emitting device 1A is omitted. In Figure 8, components located near the support member 50A are indicated by dashed lines. In the light-emitting device 1A according to the second embodiment, components similar to those in the first embodiment are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

[0061] As shown in Figures 6 to 8, the support member 50A of the light-emitting device 1A according to the second embodiment also has a recess 50ra formed by a first portion 51, a second portion 52, and a third portion 53A, similar to the support member 50 of the first embodiment. As shown in Figure 6, the recess 50ra is also recessed inward from the side of the first ridge line 51r1 of the first portion 51 and the second ridge line 52r1 of the second portion 52. In the second embodiment, the configuration of the third portion 53A of the support member 50A is different from the configuration of the support member 50 of the first embodiment. Consequently, the configuration of the recess 50ra of the second embodiment is different from the configuration of the recess 50r of the first embodiment.

[0062] As shown in Figure 7, the upper surface 53u1 of the third portion 53A is in the same position as the upper surface 51u of the first portion 51 and the upper surface 52u of the second portion 52 in the Z-axis direction. Furthermore, the upper surface 53u1 of the third portion 53A is continuous with the upper surface 51u of the first portion 51 and the upper surface 52u of the second portion 52.

[0063] Furthermore, the side surface 53b2 of the third portion 53A is located on the +X side than the side surface 51b1 of the first portion 51 and the side surface 52b1 of the second portion 52. That is, the width in the X-axis direction of the upper surface 53u1 of the third portion 53A is shorter than the width in the X-axis direction of the upper surface 51u of the first portion 51 and the width in the X-axis direction of the upper surface 52u of the second portion 52.

[0064] As shown in Figure 8, in a top view, the distance L3 from the opposing surface 53a1 of the third portion 53A to the third point P3, which is furthest from the incident surface 41 in the third portion 53A, is shorter than the distance L4 from the support surface 51a1 of the first portion 51 and the support surface 52a1 of the second portion 52 to the fourth point P4, which is furthest from the incident surface 41 in the first portion 51 and the second portion 52, in a top view. In the example shown in Figure 8, the positions of the side surface 51b1 of the first portion 51 and the side surface 52b1 of the second portion 52 are the same in the X-axis direction. Therefore, the fourth point P4 is located on both the side surface 51b1 of the first portion 51 and the side surface 52b1 of the second portion 52.

[0065] Of the space forming the recess 50ra, the space behind the side surface 53b2 of the third portion 53A is formed so as to penetrate the support member 50A in the Z-axis direction. Therefore, the wire 30a can be passed through the space (recess 50ra) sandwiched between the first portion 51 and the second portion 52 of the support member 50A and connected to the upper surface 21 of the semiconductor laser element 20. As a result, the wire 30a can be positioned even closer to the end face 22 of the semiconductor laser element 20 compared to the first embodiment. Consequently, the section on the upper surface 21 of the semiconductor laser element 20 that is not connected to the wire 30 can be further reduced, and the current injection efficiency from the wire 30 to the semiconductor laser element 20 can be further improved. In addition, the wire 30a can be passed over the first portion 51 or the second portion 52 of the support member 50A (over the second portion 52 in the examples shown in Figures 6 to 8) and connected to the upper surface 21 of the semiconductor laser element 20. In the examples shown in Figures 6 and 8, only wire 30a passes over the first portion 51 or the second portion 52 of the support member 50A and is connected to the upper surface 21 of the semiconductor laser element 20. However, one or more of the multiple wires 30 located on the -X side of wire 30a may also pass over the first portion 51 or the second portion 52 of the support member 50A and be connected to the upper surface 21 of the semiconductor laser element 20.

[0066] More specifically, as shown in Figures 6 to 8, a portion of the wire 30a overlaps with the first portion 51 or the second portion 52 in a top view. In the example shown in Figures 6 and 7, multiple wires 30 extend from a region -Y side of the semiconductor laser element 20 to the top surface 21 of the semiconductor laser element 20. Therefore, a portion of the wire 30a overlaps with the second portion 52 in a top view. However, if multiple wires 30 extend from a region +Y side of the semiconductor laser element 20 to the top surface 21 of the semiconductor laser element 20, a portion of the wire 30a overlaps with the first portion 51 in a top view.

[0067] In the example shown in Figure 8, a portion of the wire 30a lies between a first plane PL1, which includes a third point P3 and is parallel to the incident surface 41 of the lens 40, and a second plane PL2, which includes a fourth point P4 and is parallel to the incident surface 41 of the lens 40, in the X-axis direction. The first plane PL1 and the second plane PL2 are, for example, imaginary planes parallel to the YZ plane. In the example shown in Figure 8, the side surface 53b2 of the third portion 53A is an example of the first plane PL1, and the side surface 51b1 of the first portion 51 and the side surface 52b1 of the second portion 52 are examples of the second plane PL2. However, the first plane PL1 is not limited to the side surface 53b2 of the third portion 53A. Also, the second plane PL2 is not limited to the side surface 51b1 of the first portion 51 and the side surface 52b1 of the second portion 52. This further reduces the section on the upper surface 21 of the semiconductor laser element 20 where the wire 30 is not connected, thereby further improving the current injection efficiency from the wire 30 to the semiconductor laser element 20.

[0068] In the example shown in Figure 8, in a top view, the distance L5 from the opposing surface 53a1 of the third portion 53 to the junction 31 between the wire 30a and the upper surface 21 of the semiconductor laser element 20 is shorter than the distance L4 from the support surface 51a1 of the first portion 51 or the support surface 52a1 of the second portion 52 to the fourth point P4. This further reduces the section on the upper surface 21 of the semiconductor laser element 20 where the wire 30 is not joined, thereby further improving the current injection efficiency from the wire 30 to the semiconductor laser element 20.

[0069] [Third Embodiment] Next, an example of the configuration of the light-emitting device 1B according to the third embodiment will be described with reference to Figures 9 and 10. Figure 9 is a schematic top view showing the light-emitting device 1B according to the third embodiment. Figure 10 is a schematic perspective view showing the light-emitting device 1B according to the third embodiment. Note that in Figure 10, the package 70 included in the light-emitting device 1B is omitted. In the light-emitting device 1B according to the third embodiment, the same reference numerals are used for components similar to those in the first and second embodiments, and their descriptions are omitted as appropriate.

[0070] The support member 50B of the light-emitting device 1B according to the third embodiment also has a recess 50rb formed therein, which is defined by a first portion 51, a second portion 52, and a third portion 53B, similar to the support member 50 of the first embodiment and the support member 50A of the second embodiment. As shown in Figures 9 and 10, the recess 50rb also recesses inward from the side of the first ridge line 51r1 of the first portion 51 and the second ridge line 52r1 of the second portion 52, similar to the recess 50r of the first embodiment and the recess 50ra of the second embodiment. In the third embodiment, the configuration of the third portion 53B of the support member 50B is different from the configuration of the third portion 53 of the support member 50 of the first embodiment and the third portion 53A of the support member 50A of the second embodiment. Accordingly, the configuration of the recess 50rb of the third embodiment is different from the configuration of the recess 50r of the first embodiment and the recess 50ra of the second embodiment.

[0071] As shown in Figures 9 and 10, in the third embodiment, the side surface 53b3 of the third portion 53B is located on the +X side than the side surface 51b1 of the first portion 51 and the side surface 52b1 of the second portion 52. Also, the width in the X-axis direction of the upper surface 53u of the third portion 53B is shorter than the width in the X-axis direction of the upper surface 51u of the first portion 51 and the upper surface 52u of the second portion 52. Furthermore, the upper surface 53u of the third portion 53B is located lower than the upper surface 51u of the first portion 51 and the upper surface 52u of the second portion 52. In addition, the space forming the recess 50rb, located behind the side surface 53b3 of the third portion 53B, is formed to penetrate the support member 50B in the Z-axis direction. Therefore, the wire 30a can be passed through the space (recess 50rb) sandwiched between the first portion 51 and the second portion 52 of the support member 50A and connected to the upper surface 21 of the semiconductor laser element 20. Furthermore, compared to the first and second embodiments, the wire 30a can be positioned even closer to the end face 22 of the semiconductor laser element 20. As a result, the section on the upper surface 21 of the semiconductor laser element 20 that is not connected to the wire 30 can be further reduced, and the current injection efficiency from the wire 30 to the semiconductor laser element 20 can be further improved. In addition, the wire 30a can be connected to the upper surface 21 of the semiconductor laser element 20 by passing over the first portion 51 or the second portion 52 of the support member 50B (over the second portion 52 in the examples shown in Figures 9 and 10). In the examples shown in Figures 9 and 10, only the wire 30a passes over the first portion 51 or the second portion 52 of the support member 50B and is connected to the upper surface 21 of the semiconductor laser element 20. However, one or more of the multiple wires 30 that are located on the -X side of the wire 30a may also pass over the first portion 51 or the second portion 52 of the support member 50B and be connected to the upper surface 21 of the semiconductor laser element 20.

[0072] [Fourth Embodiment] Next, an example of the configuration of the light-emitting device 1C according to the fourth embodiment will be described with reference to Figures 11 to 13. Figure 11 is a schematic top view showing the light-emitting device 1C according to the fourth embodiment. Figure 12 is a schematic cross-sectional view showing a cross-section of the light-emitting device 1C cut along the line XII-XII shown in Figure 11. Figure 13 is a schematic top view showing the support member 50C provided by the light-emitting device 1C. Note that the package 70 provided by the light-emitting device 1C is omitted in Figure 12. In Figure 13, components located near the support member 50C are indicated by dashed lines. In the light-emitting device 1C according to the fourth embodiment, components similar to those in the first to third embodiments are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

[0073] The support member 50C of the light-emitting device 1C according to the fourth embodiment also has a recess 50rc formed by a first portion 51, a second portion 52, and a third portion 53C, similar to the support member 50 of the first embodiment, the support member 50A of the second embodiment, and the support member 50B of the third embodiment. As shown in Figure 13, the recess 50rc is also recessed inward from the side of the first ridge line 51r1 of the first portion 51 and the second ridge line 52r1 of the second portion 52, similar to the recess 50r of the first embodiment, the recess 50ra of the second embodiment, and the recess 50rb of the third embodiment. In the fourth embodiment, the configuration of the third portion 53C of the support member 50C differs from the configuration of the third portion 53 of the support member 50 of the first embodiment, the third portion 53A of the support member 50A of the second embodiment, and the third portion 53B of the support member 50B of the third embodiment. Accordingly, the configuration of the recess 50rc in the fourth embodiment differs from the configuration of the recess 50r in the first embodiment, the recess 50ra in the second embodiment, and the recess 50rb in the third embodiment.

[0074] As shown in Figure 12, the third portion 53C of the fourth embodiment has a first upper surface 53u2, a second upper surface 53u3, a first side surface 53b4, and a second side surface 53b5. The first upper surface 53u2 is the uppermost surface of the third portion 53C. As shown in Figure 12, the first upper surface 53u2 includes a first point P1 of the third portion 53C that is furthest from the upper surface 11 of the submount 10 in the Z-axis direction. The first upper surface 53u2 is at the same position in the Z-axis direction as the upper surface 51u of the first portion 51 and the upper surface 52u of the second portion 52. However, the first upper surface 53u2 may be at a lower position in the Z-axis direction than the upper surface 51u of the first portion 51 and the upper surface 52u of the second portion 52. In this case, it is preferable that the upper ends 421u of the joining members 421a and 421b are located higher than the first point P1 in the third portion 53C in a direction perpendicular to the upper surface 11 of the submount 10.

[0075] As shown in Figure 12, the second upper surface 53u3 is lower than the first upper surface 53u2 in a direction perpendicular to the upper surface 11 of the submount 10 (the Z-axis direction in Figure 12). The second upper surface 53u3 is located between the first upper surface 53u2 and the lower surface of the support member 50C in the Z-axis direction. In the example shown in Figure 12, the second upper surface 53u3 extends parallel to the first upper surface 53u2. However, the second upper surface 53u3 may be inclined with respect to the first upper surface 53u2.

[0076] The first side surface 53b4 extends downward from the -X side end of the first upper surface 53u2 and connects to the +X side end of the second upper surface 53u3. As shown in Figure 12, the first side surface 53b4 is located on the +X side of the second side surface 53b5. Also, as shown in Figure 13, the first side surface 53b4 is located on the +X side of the side surface 51b1 of the first part 51 and the side surface 52b1 of the second part 52.

[0077] As shown in Figure 12, the second side surface 53b5 extends downward from the -X side end of the second upper surface 53u3 and includes the third point P3, which is furthest from the incident surface 41 of the lens 40 in a top view. Also, as shown in Figure 13, the second side surface 53b5 is in the same position in the X-axis direction as the side surface 51b1 of the first part 51 and the side surface 52b1 of the second part 52.

[0078] The third portion 53C has a stepped shape composed of a first side surface 53b4, a second upper surface 53u3, and a second side surface 53b5. The second upper surface 53u3 and the first side surface 53b4 define a portion of the recess 50rc.

[0079] As shown in Figures 12 and 13, in the third portion 53C, the first side surface 53b4 is above the second side surface 53b5 and is separated from the second side surface 53b5 on the +X side. That is, the recess 50rc is formed to be further recessed inward by the distance in the X-axis direction between the first side surface 53b4 and the second side surface 53b5. Therefore, even if the capillary 2 is lowered in the Z-axis direction near the support member 50C, the possibility of contact between the capillary 2 and the support member 50C is reduced. This allows the wire 30a to be positioned close to the end face 22 of the semiconductor laser element 20. As a result, the section on the upper surface 21 of the semiconductor laser element 20 where the wire 30 is not connected can be reduced, and the current injection efficiency from the wire 30 to the semiconductor laser element 20 can be improved.

[0080] [Differentiation] Next, with reference to Figure 14, an example of the configuration of the light-emitting device 1D according to a modified version of the first to fourth embodiments will be described. Figure 14 is a schematic top view showing the light-emitting device 1D according to a modified version. In the light-emitting device 1D according to the modified version, components similar to those in the first to fourth embodiments are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

[0081] As shown in Figure 14, the support member 50D of the light-emitting device 1D has a first part 51 and a second part 52, and does not have a part corresponding to a third part 53, 53A, 53B, 53C. That is, the support member 50D does not have a part that overlaps with the semiconductor laser element 20 when viewed from above. Therefore, the wire 30 can be connected to the upper surface 21 of the semiconductor laser element 20 without the capillary 2 coming into contact with the support member 50D. This makes it possible to bring the wire 30 (hereinafter referred to as "wire 30b") that is closest to the end face 22 of the semiconductor laser element 20 close to the end face 22 of the semiconductor laser element 20. As a result, the section on the upper surface 21 of the semiconductor laser element 20 where the wire 30 is not connected can be reduced, and the current injection efficiency from the wire 30 to the semiconductor laser element 20 can be improved.

[0082] Since the support member 50D does not have any portion that overlaps with the semiconductor laser element 20 in a top view, a portion of the wire 30b can overlap with the first portion 51 or the second portion 52 in a top view. That is, a portion of the wire 30b can pass above the first portion 51 or the second portion 52. In the example shown in Figure 14, a portion of the wire 30b overlaps with the second portion 52 in a top view, but it may also overlap with the first portion 51 in a top view.

[0083] In the modified embodiment, the wire 30b can be positioned closer to the end face 22 of the semiconductor laser element 20 compared to embodiments 1 to 4. On the other hand, according to embodiments 1 to 4, the wire 30a can be positioned closer to the end face 22 of the semiconductor laser element 20 compared to the conventional embodiment, and the stability of the support members 50, 50A, 50B, 50C can be improved compared to the modified embodiment, as the support members 50, 50A, 50B, 50C have third portions 53, 53A, 53B, 53C.

[0084] Although preferred embodiments have been described in detail above, the invention is not limited to the embodiments described above, and various modifications and substitutions can be made to the embodiments described above without departing from the scope of the claims.

[0085] The aspects of this disclosure are, for example, as follows: <Item 1> A submount having an upper surface, A semiconductor laser element is disposed on the upper surface of the submount and has an upper surface and an end surface that emits laser light. A plurality of wires connected to the upper surface of the semiconductor laser element, A lens having an incident surface facing the end face of the semiconductor laser element, A support member that supports the aforementioned lens, A joining member that joins the support member and the lens, Equipped with, The support member includes a first portion and a second portion positioned to the side of the semiconductor laser element, sandwiching the semiconductor laser element, and a third portion positioned between the first portion and the second portion, which, in a top view, overlaps with a portion of the semiconductor laser element including its end face. The first part has a top surface, a support surface facing the lens, and a side surface provided on the opposite side of the support surface, The second portion has an upper surface, a support surface facing the lens, and a side surface provided on the opposite side of the support surface, The support member has recesses formed in it as defined by the first portion, the second portion, and the third portion. The recess is formed so as to be recessed inward from the side of the first ridge line formed by the intersection of the upper surface of the first portion and the side surface of the first portion, and the second ridge line formed by the intersection of the upper surface of the second portion and the side surface of the second portion. Light-emitting device. <Item 2> In a direction perpendicular to the upper surface of the submount, the distance from the upper surface of the submount to the first point of the third portion that is furthest from the upper surface of the submount is shorter than the distance from the upper surface of the submount to the second point of the first and second portions that is furthest from the upper surface of the submount, in a direction perpendicular to the upper surface of the submount. The light-emitting device described in item 1 above. <Item 3> The third portion has an opposing surface that faces the lens and is continuous with the support surface of the first portion and the support surface of the second portion, In a top view, the distance from the opposing surface to the third point of the third portion that is furthest from the incident surface is shorter than the distance from the support surface of the first portion and the support surface of the second portion to the fourth point of the first portion and the second portion that is furthest from the incident surface of the lens. The light-emitting device described in item 1 above. <Clause 4> The third portion includes a first upper surface including a first point furthest from the upper surface of the submount, a second upper surface located lower than the first upper surface in a direction perpendicular to the upper surface of the submount, a first side surface extending downward from the first upper surface and connecting to the second upper surface, and a second side surface extending downward from the second upper surface and including a third point furthest from the incident surface in a top view, The light-emitting device described in item 1 above. <Item 5> The joining member is positioned between the lens and the first part, and between the lens and the second part, The upper end of the joining member is higher than the first point of the third portion in a direction perpendicular to the upper surface of the submount. The light-emitting device described in item 2 or item 4 above. <Item 6> Of the plurality of wires, the portion of the wire located closest to the support member overlaps with the first portion or the second portion in a top view. The light-emitting device described in item 3 above. <Clause 7> Of the plurality of wires, the portion of the wire located closest to the support member lies between a first plane including the third point and parallel to the incident plane, and a second plane including the fourth point and parallel to the incident plane. The light-emitting device described in item 6 above. <Item 8> In a top view, the distance from the opposing surface to the joint between the wire located closest to the support member among the plurality of wires and the top surface of the semiconductor laser element is shorter than the distance from the support surface of the first part and the support surface of the second part to the fourth point. The light-emitting device described in item 6 or item 7 above. <Clause 9> The third portion has an opposing surface that faces the lens and is continuous with the support surface of the first portion and the support surface of the second portion, and a side surface provided on the opposite side from the opposing surface, The distance from the side surface of the third portion to the joint between the wire located closest to the support member among the plurality of wires and the upper surface of the semiconductor laser element is 50 μm or more and 200 μm or less. A light-emitting device according to any one of the above items <1> to <8>. <Item 10> In a top view and in a direction perpendicular to the incident surface, the length of the overlapping portion between the semiconductor laser element and the third portion is 200 μm or more and 500 μm or less. A light-emitting device according to any one of the above items <1> to <9>. [Explanation of symbols]

[0086] 1, 1A, 1B, 1C, 1D Light-emitting device 10 Submount 11 Top side 20 Semiconductor laser elements 21 Top side 22 End face 30 wires 40 lenses 41 Entrance plane 50, 50A, 50B, 50C, 50D Support members 50r, 50ra, 50rb, 50rc recess 51 Part 1 51a1 Support surface 51b1 Side 51r1 1st ridgeline 51u top 52 Part 2 52a1 Support Surface 52b1 Side View 52r1 Second edge 52u on Part 3: 53, 53A, 53B, 53C 53a1 facing side Side views of 53b1, 53b2, and 53b3 53b4 First side view 53b5 Second side 53u, 53u1 above 53u2, first on top 53u3, second on top 421a, 421b joint parts 421u upper end P1 Point 1 Point 2 of P2 P3, point 3 P4, point 4

Claims

1. A submount having an upper surface, A semiconductor laser element is disposed on the upper surface of the submount and has an upper surface and an end surface that emits laser light. A plurality of wires connected to the upper surface of the semiconductor laser element, A lens having an incident surface facing the end face of the semiconductor laser element, A support member that supports the aforementioned lens, A joining member that joins the support member and the lens, Equipped with, The support member includes a first portion and a second portion positioned to the side of the semiconductor laser element, sandwiching the semiconductor laser element, and a third portion positioned between the first portion and the second portion, which, in a top view, overlaps with a portion of the semiconductor laser element including its end face. The first part has a top surface, a support surface facing the lens, and a side surface provided on the opposite side of the support surface, The second portion has an upper surface, a support surface facing the lens, and a side surface provided on the opposite side of the support surface, The support member has recesses formed in it as defined by the first portion, the second portion, and the third portion. The recess is formed so as to be recessed inward from the side of the first ridge line formed by the intersection of the upper surface of the first portion and the side surface of the first portion, and the second ridge line formed by the intersection of the upper surface of the second portion and the side surface of the second portion. Light-emitting device.

2. In a direction perpendicular to the upper surface of the submount, the distance from the upper surface of the submount to the first point of the third portion that is furthest from the upper surface of the submount is shorter than the distance from the upper surface of the submount to the second point of the first and second portions that is furthest from the upper surface of the submount, in a direction perpendicular to the upper surface of the submount. The light-emitting device according to claim 1.

3. The third portion has a facing surface that is opposite to the lens and is continuous with the support surface of the first portion and the support surface of the second portion. In a top view, the distance from the opposing surface to the third point of the third portion that is furthest from the incident surface is shorter than the distance from the support surface of the first portion and the support surface of the second portion to the fourth point of the first portion and the second portion that is furthest from the incident surface of the lens. The light-emitting device according to claim 1.

4. The third portion includes a first upper surface including a first point furthest from the upper surface of the submount, a second upper surface located lower than the first upper surface in a direction perpendicular to the upper surface of the submount, a first side surface extending downward from the first upper surface and connecting to the second upper surface, and a second side surface extending downward from the second upper surface and including a third point furthest from the incident surface in a top view. The light-emitting device according to claim 1.

5. The joining member is positioned between the lens and the first portion, and between the lens and the second portion, The upper end of the joining member is higher than the first point of the third portion in a direction perpendicular to the upper surface of the submount. The light-emitting device according to claim 2 or claim 4.

6. Of the multiple wires, the portion of the wire located closest to the support member overlaps with the first portion or the second portion in a top view. The light-emitting device according to claim 3.

7. Of the multiple wires, the portion of the wire located closest to the support member lies between a first plane including the third point and parallel to the incident plane, and a second plane including the fourth point and parallel to the incident plane. The light-emitting device according to claim 6.

8. In a top view, the distance from the opposing surface to the joint between the wire located closest to the support member among the plurality of wires and the top surface of the semiconductor laser element is shorter than the distance from the support surface of the first part and the support surface of the second part to the fourth point. The light-emitting device according to claim 6.

9. The third portion has an opposing surface that faces the lens and is continuous with the support surface of the first portion and the support surface of the second portion, and a side surface provided on the opposite side from the opposing surface. The distance from the side surface of the third portion to the joint between the wire located closest to the support member among the plurality of wires and the upper surface of the semiconductor laser element is 50 μm or more and 200 μm or less. A light-emitting device according to any one of claims 1 to 3.

10. In a top view, and in a direction perpendicular to the incident surface, the length of the overlapping portion between the semiconductor laser element and the third portion is 200 μm or more and 500 μm or less. A light-emitting device according to any one of claims 1 to 3.

Images