Light-emitting device

Abstract

The display unit has a curved shape, resulting in a lightweight and flexible display. However, the challenge is to provide a light-emitting device capable of high-definition full-color display. [Solution] A plastic substrate and a plastic substrate formed on the plastic substrate via an adhesive. An insulating layer, a thin film transistor formed on the insulating layer, and a thin film transistor formed on the thin film transistor A protective insulating film, a color filter formed on the protective insulating film, and on the color filter An interlayer insulating film formed thereon, and a thin film transistor formed on the interlayer insulating film, which is electrically connected to the thin film transistor. This is a light-emitting device having a white light-emitting element connected to a flex. Despite being a simple light-emitting device, it is capable of high-definition full-color display.

Description

[Technical Field]

[0001] The present invention relates to a light-emitting device having a circuit composed of thin-film transistors (hereinafter referred to as TFTs). This relates to electronic devices equipped with such light-emitting devices. [Background technology]

[0002] In recent years, technological advancements in the display field have been remarkable, particularly in the increasing resolution and thinness of displays. Regarding standardization, significant progress has been made, partly driven by market demand.

[0003] The next phase will focus on the commercialization of flexible displays with curved shapes. In fact, various proposals have been made regarding the flexibility of displays. (See, for example, Patent Document 1). Also, light-emitting devices using flexible substrates are glass It is possible to reduce the weight compared to using methods such as [mention specific methods].

[0004] However, even with flexible displays, high image quality is an essential requirement. .

[0005] There are various factors that determine image quality. For example, to improve image quality, resolution can be increased. Improving it is effective. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2003-204049 [Overview of the project] [Problems that the invention aims to solve]

[0007] However, flexible substrates are prone to distortion and warping precisely because of their flexibility. Therefore, when manufacturing a full-color display using a flexible substrate, the appropriateness of the display section It is difficult to precisely paint the light-emitting layer or install color filters in delicate areas. That was the problem.

[0008] Therefore, the display unit can have a curved shape, and a lightweight, flexible display can be achieved. The challenge is to provide a light-emitting device that can display high-definition full-color images, even in a spray format. do. [Means for solving the problem]

[0009] The above problem is first addressed by applying a color filter and a thin film transistor to a flat, plate-shaped substrate such as a glass substrate. A device formation layer containing a zista is formed, and then the device formation layer is transferred onto a plastic substrate. This can then be solved by forming a light-emitting element that emits white light.

[0010] In other words, one aspect of the present invention comprises a plastic substrate and an adhesive on the plastic substrate. An insulating layer formed via, a thin film transistor formed on the insulating layer, and the thin film transistor A protective insulating film formed on the inverter, and a color filter formed on the protective insulating film, An interlayer insulating film formed on the color filter, and the thin film formed on the interlayer insulating film. This is a light-emitting device having a white light-emitting element electrically connected to a transistor. The optical device is a flexible light-emitting device capable of high-definition full-color display. .

[0011] Another aspect of the present invention is a plastic substrate and an adhesive applied to the plastic substrate. An insulating layer formed through, a thin film transistor formed on the insulating layer, a first protective insulating film formed on the thin film transistor, a color filter formed on the first protective insulating film, a second protective insulating film formed on the color filter, an interlayer insulating film formed on the second protective insulating film, and a white light emitting element formed on the interlayer insulating film and electrically connected to the thin film transistor. The light emitting device is a flexible light emitting device capable of high-definition full-color display. Further, the light emitting device having this configuration can protect the white light emitting element from the gas emitted from the color filter by the second protective insulating film, so it is a more reliable light emitting device. A first protective insulating film formed on the transistor, a color filter formed on the first protective insulating film, a second protective insulating film formed on the color filter, an interlayer insulating film formed on the second protective insulating film, and a white light emitting element formed on the interlayer insulating film and electrically connected to the thin film transistor. A second protective insulating film formed on the color filter, an interlayer insulating film formed on the second protective insulating film, and a white light emitting element formed on the interlayer insulating film and electrically connected to the thin film transistor. An interlayer insulating film formed on the second protective insulating film, and a white light emitting element formed on the interlayer insulating film and electrically connected to the thin film transistor. A white light emitting element formed on the interlayer insulating film and electrically connected to the thin film transistor. The light emitting device is a flexible light emitting device capable of high-definition full-color display. Although it is a flexible light emitting device, high-definition full-color display is possible. The light emitting device having this configuration can protect the white light emitting element from the gas emitted from the color filter by the second protective insulating film, so it is a more reliable light emitting device. Therefore, it is a more reliable light emitting device.

[0012] In the above configuration, the pattern of the color filter is formed corresponding to the first pixel electrode of the white light emitting element, and at the outer peripheral portion of the color filter, the first protective insulating film and the second protective insulating film are in contact A light emitting device is also another aspect of the present invention. In the light emitting device, the white light emitting element and the thin film transistor can be effectively protected from the gas emitted from the color filter and other contaminants. Therefore, it is a light emitting device with further improved reliability. The pattern of the color filter is formed corresponding to the first pixel electrode of the white light emitting element, and at the outer peripheral portion of the color filter, the first protective insulating film and the second protective insulating film are in contact. A light emitting device in which the first protective insulating film and the second protective insulating film are in contact at the outer peripheral portion of the color filter is also another aspect of the present invention. In the light emitting device, the white light emitting element and the thin film transistor can be effectively protected from the gas emitted from the color filter and other contaminants. Therefore, it is a light emitting device with further improved reliability. Therefore, it is a light emitting device with further improved reliability.

[0013] It is preferable that the above-mentioned protective insulating film is a silicon nitride film. This is because the silicon nitride film can more effectively suppress the diffusion of contaminants and the gas emitted from the color filter. The silicon nitride film can more effectively suppress the diffusion of contaminants and the gas emitted from the color filter. For this reason.

[0014] Another aspect of the present invention is a plastic substrate, a first insulating layer formed on the plastic substrate through an adhesive, a color filter formed on the first insulating layer, A first insulating layer formed on the plastic substrate through an adhesive, a color filter formed on the first insulating layer, A thin-film transistor formed on a second insulating layer formed covering the color filter, A white light-emitting element formed on the thin-film transistor and electrically connected to the thin-film transistor. It is a light-emitting device having a child and a. Even a light-emitting device having such a configuration, flex It can achieve a high-definition, full-color display.

[0015] In light-emitting devices having such a configuration, a color filter is formed before thin-film tracing. Since it forms a transistor, the semiconductor layer of a thin-film transistor is amorphous silicon. It is preferable that it be formed from either an organic semiconductor, an oxide semiconductor, or microcrystalline silicon. It's nice. [Effects of the Invention]

[0016] The light-emitting device according to an embodiment of the present invention is a flexible light-emitting device that provides high-definition full-color illumination. - It can be displayed. [Brief explanation of the drawing]

[0017] [Figure 1] A diagram showing a light-emitting device according to one aspect of the present invention. [Figure 2] A diagram showing a light-emitting device according to one aspect of the present invention. [Figure 3] A diagram illustrating the manufacturing process of a light-emitting device according to one embodiment of the present invention. [Figure 4] A diagram showing a light-emitting device according to one aspect of the present invention. [Figure 5] A diagram showing an electronic device according to one aspect of the present invention. [Figure 6] A diagram illustrating the structure of the light-emitting layer. [Figure 7] A diagram illustrating the structure of the light-emitting layer. [Figure 8] A diagram illustrating the configuration of a light-emitting element. [Modes for carrying out the invention]

[0018] Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is largely... It is possible to carry out the invention in different ways, without departing from the spirit and scope of the present invention. It is easily understood by those skilled in the art that its form and details can be changed in various ways. Therefore, this should not be interpreted as being limited to the contents described in this embodiment.

[0019] (Embodiment 1) In one embodiment of the present invention, a light-emitting device is formed in an element formation layer that includes TFTs and electrodes for light-emitting elements, It is supported by a plastic substrate via an agent, between the plastic substrate and the light-emitting element. It is characterized by having a color filter.

[0020] A light-emitting device having such a configuration can be manufactured by the following methods, among others. First, a release layer is applied to a fabricated substrate made of a material such as glass or ceramic, which has low flexibility. A device formation layer is formed, which includes a TFT, a color filter, and the first pixel electrode of the light-emitting element. Next, in the release layer, the fabricated substrate and the element formation layer are separated, and the separated element formation layer is attached The plastic substrate is bonded to the adhesive using an adhesive agent.

[0021] In the light-emitting device fabricated in this manner, color fill is applied to the fabricated substrate with low flexibility. A lattice is formed. Therefore, the pixel arrangement is intended for display devices that provide high-definition full-color display. Even so, the alignment does not shift significantly. This allows for flexibility and High-definition full-color display will become possible.

[0022] Furthermore, in order to mitigate the adverse effects on the light-emitting element caused by gases emitted from the color filter, A protective insulating film may be provided on the color filter.

[0023] Figures 1(A) to 1(C) show diagrams representing the light-emitting device of this embodiment.

[0024] In the light-emitting device shown in Figure 1(A), adhesive 111 is provided on the plastic substrate 110. The adhesive 111 is provided so as to be in contact with the insulating layer 112, and the element forming layer 113 and The plastic substrate 110 is bonded to the element formation layer 113. The element formation layer 113 contains the pixel TFT 114 and the drive The TFT115, color filter116, and pixel TFT114 of the circuit section are electrically connected to the The optical element 121 is provided with a first pixel electrode 117 and a partition wall 118, as shown in Figure 1(A). Some of them are shown. The light-emitting element 121 is the first pixel exposed from the partition wall 118. An electrode 117 and an EL containing a light-emitting material formed covering at least the first pixel electrode 117. It is formed by layer 119 and a second pixel electrode 120 that covers the EL layer 119. It is.

[0025] The light emitted by the light-emitting element 121 is preferably white. Also, the light is preferably red, blue, or green. Light having a peak in this wavelength region is preferred. The EL layer 119 and the second of the light-emitting element 121 The pixel electrode 120 is formed after the element formation layer 113 is bonded to the plastic substrate 110. The EL layer 119 and the second pixel electrode 120 of the light-emitting element 121 are common to all pixels. Therefore, even if formed on the plastic substrate 110, the alignment is It won't be a problem.

[0026] In the light-emitting device shown in Figures 1(A) to (C), the color filter 116 forms a TFT. It is formed after that. The color filter 116 is a first protective provided on the TFT. It is preferably formed on the insulating film 122. The first protective insulating film 122 can protect the TF T from contaminants from the color filter 116.

[0027] FIG. 1(B) shows a configuration in which a second protective insulating film 123 is provided on the color filter 116 . In this configuration, the adverse effects of the gas emitted from the color filter 116 on the light-emitting element 121 can be reduced, so that a more reliable light-emitting device can be provided.

[0028] FIG. 1(C) shows a configuration in which a color filter 124 patterned corresponding to the first pixel electrode 117 of the light-emitting element is provided. In this configuration, at least on the outer periphery of the color filter 124, the first protective insulating film 122 and the second protective insulating film 123 formed to cover the color filter 124 are in contact with each other, and the color filter 124 is completely covered by the protective insulating film. As a result, it is possible to more effectively prevent contaminants such as gas from being generated and diffused from the color filter 124. The first protective insulating film 122 and the second protective insulating film 123 are preferably formed of the same material. Further, it is more preferable to form these with silicon nitride or silicon oxynitride having a higher nitrogen content than oxygen. preferably.

[0029] Subsequently, a method for manufacturing the light-emitting device according to the present embodiment will be described using FIGS. 3(A) to (D) and FIGS. 1(A) to (C).

[0030] First, an element formation layer 113 including a TFT, a color filter, and a first pixel electrode, etc. is formed on a manufacturing substrate 2 hundred having an insulating surface via a release layer 201 (see FIG. 3(A)).

[0031] The fabricated substrate 200 can be a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, A metal substrate with an insulating layer formed on its surface can be used. The fabricated substrate 200 can be appropriately selected according to the process.

[0032] As the fabricated substrate 200, a substrate with low flexibility, such as those commonly used in the fabrication of displays, is used. Because a panel is used, the pixel TFTs and color filters are arranged in a way that is suitable for high-resolution display. It is possible to do so.

[0033] The release layer 201 is formed by sputtering, plasma CVD, coating, printing, etc. Ten (W), Molybdenum (Mo), Titanium (Ti), Tantalum (Ta), Niobium (Nb) Nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), ruthenium Rum (Ru), Rh (Rh), Palladium (Pd), Osmium (Os), Iridium Elements selected from iron (Ir) and silicon (Si), and alloy materials with these elements as the main components. A single-layer or laminated structure consisting of a material or a compound material mainly composed of these elements. It is formed in any case of amorphous, microcrystalline, or polycrystalline silicon. This is also acceptable. Note that the coating methods here include spin coating, droplet dispensing, and dispensing. This includes methods such as nozzle printing and slot die coating.

[0034] When the release layer 201 has a single-layer structure, it preferably consists of a tungsten layer, a molybdenum layer, and tungsten. A layer containing a mixture of stainless steel and molybdenum, or containing tungsten oxide or oxidized nitride. A layer containing molybdenum oxide or oxidized nitride, or a layer of tungsten and molybdenum A layer containing oxides or oxiditrides of the mixture is formed. A mixture of these elements is, for example, an alloy of tungsten and molybdenum.

[0035] When the release layer 201 has a laminated structure, preferably the first layer is a tungsten layer, molybdenum A layer containing tungsten or a mixture of tungsten and molybdenum is formed, and as the second layer, tungsten layers containing stainless steel oxides, nitrides, oxide nitrides, or nitride oxides, and molybdenum oxides A layer containing a material, nitride, oxidized nitride, or nitride oxide, or tungsten and molybdenum A layer is formed containing an oxide, nitride, oxidized nitride, or nitride oxide of the mixture.

[0036] The release layer 201 is a laminated structure consisting of a tungsten-containing layer and a tungsten oxide-containing layer. When forming the structure, a layer containing tungsten is formed, and an insulating layer formed of oxide is formed on top of it. By forming a layer (for example, a silicon oxide layer), at the interface between the tungsten layer and the insulating layer, The formation of a layer containing tungsten oxide may also be utilized. Furthermore, tungsten The surface of the layer containing tene is treated with thermal oxidation, oxygen plasma treatment, or a highly oxidizing solution such as ozonated water. A layer containing tungsten oxide may be formed by processing such as in the plasma. Processing and heat treatment involve oxygen, nitrogen, nitrous oxide, or mixtures of these gases with other gases. This may be carried out under a gaseous atmosphere. This applies to tungsten nitrides, oxidized nitrides, and nitride acids. The same applies when forming a layer containing tungsten; after forming a layer containing tungsten, the upper layer... An insulating layer formed of nitrides, oxidized nitrides, or nitride oxides (e.g., silicon nitride layer, acid It is preferable to form a silicon nitride layer or a silicon nitride oxide layer.

[0037] The underlying insulating layer is silicon oxide, silicon nitride, silicon oxide nitride, or silicon nitride oxide It can be fabricated using an inorganic insulating film such as silicon, either as a single layer or in multiple layers.

[0038] The semiconductor layer material of a TFT is amorphous (also known as "AS"). ) Semiconductors, polycrystalline semiconductors, microcrystals (semi-amorphous or microcrystals, hereafter) It is possible to use semiconductors (also called "SAS") or semiconductors mainly composed of organic materials. The semiconductor layer can be made using sputtering, LPCVD, or plasma CVD. It can be used to form a thin film.

[0039] Furthermore, microcrystalline semiconductors are intermediate between amorphous and single crystals when considering Gibbs free energy. It belongs to a metastable state. That is, it has a third state that is stable in terms of free energy. A semiconductor having short-range order and lattice distortion. Columnar or needle-shaped crystals are formed on the substrate surface. It grows in the direction normal to the surface. Microcrystalline silicon, a typical example of a microcrystalline semiconductor, The Raman spectrum of single-crystal silicon shows 520 cm⁻¹. -1 Shifting to lower wavenumbers It is showing 520 cm² of single-crystal silicon. -1 48 showing amorphous silicon 0cm -1 There is a peak in the Raman spectrum of microcrystalline silicon between these points. Also, unbonded hands ( To terminate the dangling bond, hydrogen or halogen is added in at least 1 atomic percent or so It contains more than this amount. Furthermore, it contains noble gas elements such as helium, argon, krypton, and neon. By incorporating elements to further enhance lattice distortion, stability is increased and a good microcrystalline semiconductor film is produced. It can be obtained.

[0040] This microcrystalline semiconductor film is produced by high-frequency plasma CVD with frequencies ranging from tens of MHz to hundreds of MHz. Alternatively, it can be formed by microwave plasma CVD with a frequency of 1 GHz or higher. Typical examples include SiH4, Si2H6, SiH2Cl2, SiHCl3, SiCl4, and S Formed using a gas diluted with hydrogen, such as iF4 silicon hydride or silicon halogenate. It is possible to use gases containing silicon hydride and hydrogen, such as helium, argon, and crystal. By diluting it with one or more noble gas elements selected from putone and neon, it can be finely compounded. A crystalline semiconductor film can be formed. The hydrogen flow rate ratio to silicon hydride at this time is 5 times or more and 200 times or less, preferably 50 times or more and 150 times or less, and more preferably 100 times. do.

[0041] Examples of amorphous semiconductors include hydrogenated amorphous silicon and crystalline semiconductors. Polysilicon is a typical example. This uses polysilicon, which is formed through a process temperature of 800°C or higher, as the main material. The main material is so-called high-temperature polysilicon, or polysilicon formed at process temperatures below 600°C. Using so-called low-temperature polysilicon as a material, and elements that promote crystallization, amorphous silicon It contains polysilicon, which is crystallized from silicon. Of course, as mentioned above, microcrystalline It is also possible to use a crystalline semiconductor or a semiconductor that contains a crystalline phase in part of the semiconductor layer.

[0042] In addition, semiconductor materials include elements such as silicon (Si) and germanium (Ge). Compound semiconductors such as GaAs, InP, SiC, ZnSe, GaN, and SiGe are also included. It can also be used. Furthermore, oxide semiconductors such as zinc oxide, tin oxide, and magnesium oxide can be used. an acid composed of zinc, gallium oxide, indium oxide, and multiple of the above oxide semiconductors. Iridescent semiconductors can be used. For example, zinc oxide, indium oxide, and oxide Oxide semiconductors composed of gallium can also be used. When used in the conductive layer, the gate insulating film is made of yttrium oxide, aluminum oxide, or titanium oxide. It is often possible to use such stacks, with a gate electrode layer, a source electrode layer, and a drain electrode layer. For this purpose, it is good to use ITO, Au, Ti, etc. Alternatively, zinc oxide can be mixed with In, Ga, etc. It is also possible.

[0043] When a crystalline semiconductor layer is used as the semiconductor layer, there are various methods for fabricating that crystalline semiconductor layer. Methods (laser crystallization, thermal crystallization, or using elements that promote crystallization such as nickel) A thermal crystallization method (or similar) can be used. Alternatively, a microcrystalline semiconductor, such as SAS, can be irradiated with a laser to form a crystal. Crystallization can be promoted, increasing crystallinity. If elements that promote crystallization are not introduced, the material will be amorphous. Before irradiating the silicon film with laser light, it was heated at 500°C for 1 hour under a nitrogen atmosphere. Therefore, the hydrogen concentration of the amorphous silicon film is 1 × 10 20 atoms / cm 3 As low as below This causes the amorphous silicon film containing a lot of hydrogen to lower. This is because the condom membrane is destroyed.

[0044] One method for introducing a metal element into an amorphous semiconductor layer is to introduce the metal element into the surface of the amorphous semiconductor layer. There are no particular limitations as long as the method can be used to create the material on or within the surface. For example, sputtering, CV Method D, plasma treatment (including plasma CVD), adsorption method, or application of a metal salt solution. Methods such as the following can be used. Of these, the method using a solution is simple and involves metal elements. It is useful in that the concentration can be easily adjusted. Also, at this time the surface of the amorphous semiconductor layer To improve wettability and allow the aqueous solution to spread across the entire surface of the amorphous semiconductor layer, under an oxygen atmosphere UV light irradiation treatment, thermal oxidation treatment, or ozonated water or peroxide containing hydroxyl radicals It is desirable to form an oxide film by treatment with hydrogen oxide or the like.

[0045] Furthermore, in the crystallization process, in which an amorphous semiconductor layer is crystallized to form a crystalline semiconductor layer, An element that promotes crystallization (also referred to as a catalyst element or metallic element) is added to the conductive layer, and then heat treatment (55 Crystallization may be carried out by heating at 0°C to 750°C for 3 minutes to 24 hours. (This promotes crystallization.) The elements that do this include iron (Fe), nickel (Ni), cobalt (Co), and ruthenium (R). u), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir) ), use one or more types selected from platinum (Pt), copper (Cu), and gold (Au). It is possible.

[0046] In order to remove or reduce elements that promote crystallization from the crystalline semiconductor layer, By contacting the material, a semiconductor layer containing impurity elements is formed, which functions as a gettering sink. As for pure elements, there are impurity elements that confer the n-type, impurity elements that confer the p-type, and noble gas elements. These can be used, for example, phosphorus (P), nitrogen (N), arsenic (As), antimony Sb, bismuth (Bi), boron (B), helium (He), neon (Ne), a One or more selected from argon (Ar), krypton (Kr), and xenon (Xe). A seed can be used. Specifically, a crystalline semiconductor layer containing an element that promotes crystallization can be brought into contact with it. A semiconductor layer containing the aforementioned impurity elements is formed, and then heat-treated (at 550°C to 750°C) Perform the process for 3 minutes to 24 hours. Elements that promote crystallization in the crystalline semiconductor layer are impurities. Elements that migrate into the semiconductor layer containing the element and promote crystallization in the crystalline semiconductor layer are removed or reduced. It is reduced. Then, the semiconductor layer containing the impurity elements that have become a gettering sink is removed.

[0047] Furthermore, crystallization of the amorphous semiconductor layer is achieved by combining heat treatment and laser irradiation. Alternatively, heat treatment or laser irradiation can be performed individually or multiple times.

[0048] Alternatively, the crystalline semiconductor layer may be formed directly on the substrate by a plasma treatment method. A crystalline semiconductor layer may be selectively formed on the substrate using a rasma treatment method.

[0049] As a semiconductor film mainly composed of organic materials, a semiconductor film mainly composed of carbon is used. This can be done. Specifically, pentacene, tetracene, thiophene oligomer derivatives, polyphene Nylene derivatives, phthalocyanine compounds, polyacetylene derivatives, polythiophene derivatives, Examples include cyanine pigments.

[0050] The gate insulating film and gate electrode can be fabricated using known structures and methods. For example, the gate The insulating film is a known structure such as a single layer of silicon oxide or a multilayer structure of silicon oxide and silicon nitride. The structure can be fabricated using methods such as CVD, sputtering, or droplet ejection. Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd Zn, Fe, Ti, Si, Ge, Zr, Ba, or elements selected from these elements, or mainly these elements It can be formed from alloying or compounding materials. Furthermore, impurity elements such as phosphorus can be used. Even when using semiconductor films such as doped polycrystalline silicon films or AgPdCu alloys That's fine. It can be either a single-layer or multi-layer structure.

[0051] Note that Figure 1 shows an example of a top-gate transistor, but of course In addition, bottom-gate transistors or other known transistor structures may be used.

[0052] The first protective insulating film 122 is formed on the gate insulating film and the gate electrode. The edge film 122 consists of a silicon oxide film, a silicon oxide nitride film, a silicon nitride oxide film, and a silicon nitride film. It may be formed by any of the recon films, or a laminated film combining them. However, the first protective insulating film 122 is formed from an inorganic insulating material. By providing this, contamination of the TFT from the color filter 116 that is formed later is reduced. This is possible. The first protective insulating film 122 is a silicon nitride film or has an acid content. Using a silicon nitride film with a higher content than the raw material allows for a greater impact on the color filter 116. This configuration is preferable because it can effectively block contaminants.

[0053] The color filter 116 is formed on the first protective insulating film 122. (Figures 1(A) to 1(C)) ) Although only one color filter is shown, there are also color filters that transmit red light and blue light. A color filter that transmits colored light and a color filter that transmits green light are arranged in a predetermined manner. and is formed in shape. The arrangement pattern of the color filter 116 is a stripe arrangement. There are diagonal mosaic arrangements, triangular mosaic arrangements, or RGBW four-pixel arrangements, but how Any arrangement is acceptable. The RGBW4 pixel arrangement has a color filter that transmits red light. Pixels that have been modified, pixels equipped with a color filter that transmits blue light, and pixels that transmit green light It has pixels with a color filter and pixels without a color filter. This pixel arrangement is effective in reducing power consumption and other factors.

[0054] The color filter 116 can be formed using known materials. The 16 patterns involve exposing the color filter 116 itself when using a photosensitive resin, It may also be formed by image formation. Furthermore, when forming fine patterns, dry etching may be used. It is preferable to form such a pattern.

[0055] After the color filter 116 is formed, an organic insulating material is then applied to the color filter 116. An interlayer insulating film is formed consisting of the following. As organic insulating materials, acrylic, polyimide, poly Polyimamides, benzocyclobutene resins, etc., can be used.

[0056] Between the color filter 116 and the interlayer insulating film, gases emitted from the color filter 116 To suppress the effects of the smear, a second protective insulating film 123 may be provided (see Figure 1(B)). The second protective insulating film 123 is formed from the same material as the first protective insulating film 122. This is possible. In addition, the second protective insulating film 123 is a silicon nitride film or has a nitrogen content Using a silicon nitride film with a higher oxygen content than the color filter 116 This configuration is preferable because it can effectively suppress the diffusion of the released gas. In the outer periphery of the color filter 124, the first protective insulating film 122 and the second protective insulating film If the membrane 123 is in contact with the structure (see Figure 1(C)), then more contaminants and color filters will be released. This configuration is preferable because it can suppress the effects of the released gas. By forming the first protective insulating film 122 and the second protective insulating film 123 with the same material, This improves adhesion and further reduces the impact of contaminants and gases released from color filters. This can be achieved by reducing the effects of pollutants and gases released from color filters. This can improve the reliability of the light-emitting device.

[0057] After forming the interlayer insulating film, the first pixel electrode 117 is formed using a transparent conductive film. If the pixel electrode 117 is the anode, the material of the transparent conductive film is indium oxide or indium oxide. Indium tin oxide alloy (ITO) can be used. (IZO) may also be used. Zinc oxide is also a suitable material, and furthermore, the transmittance of visible light is or zinc oxide (GZO) with added gallium (Ga) to increase conductivity. It is also possible to use aluminum or other materials with a work function. Either use an ultrathin film of a low-quality material, or laminate such a thin film with the transparent conductive film described above. The structure can be used. The first pixel electrode 117 can be produced by sputtering or vacuum deposition. It can be formed using [a specific method / tool].

[0058] Next, the interlayer insulating film, (second protective insulating film 123), (color filter 116), By etching the protective insulating film 122 and the gate insulating film, half of the TFT A contact hole is formed that reaches the conductive layer. Furthermore, a conductive metal film is formed by sputtering or After forming a film by vacuum deposition, the electrodes and wiring of the TFT are formed by etching. Furthermore, one of the source electrode and drain electrode of the pixel TFT114 is the first pixel electrode 1 A portion overlapping with 17 is provided and formed to be electrically connected.

[0059] Subsequently, an interlayer insulating film and an organic or inorganic insulating material are used to cover the first pixel electrode 117. Using this, an insulating film is formed, and the insulating film is exposed on the surface of the first pixel electrode 117 and the first pixel The end of the raw electrode 117 is processed to form a partition wall 118.

[0060] The element formation layer 113 can be formed through the process described above.

[0061] Next, the element formation layer 113 and the temporary support substrate 202 are bonded together using the first adhesive 203. In the peeling layer 201, the element formation layer 113 is peeled off from the fabricated substrate 200. The element formation layer 113 is provided on the temporary support substrate 202 side (see Figure 3(B)).

[0062] The temporary support substrate 202 is a glass substrate, quartz substrate, sapphire substrate, ceramic substrate, surface A metal substrate with an insulating layer formed on it can be used. A plastic substrate with heat resistance capable of withstanding the processing temperature may be used, or A flexible substrate such as a lumen may also be used.

[0063] Furthermore, the first adhesive 203 used here is soluble in solvents such as water, or is soluble in ultraviolet light, etc. Plasticization is possible by irradiation, and the temporary support substrate 202 and the element formation layer 113 can be used as needed. Use an adhesive that allows for chemical or physical separation.

[0064] Furthermore, the transfer process from the fabricated substrate 200 to the temporary support substrate 202 involves the fabricated substrate 200 and the element type A release layer 201 is formed between the layers 113, and a metallic acid is formed between the release layer 201 and the element formation layer 113. A method of forming a metal oxide film, weakening the metal oxide film by crystallization, and peeling off the element formation layer 113. A hydrogen-containing amorphous silicon film is placed between the heat-resistant fabricated substrate 200 and the element formation layer 113. By providing a device and removing the amorphous silicon film by laser irradiation or etching, A method for peeling off the element formation layer 113, and a peeling layer 2 between the fabricated substrate 200 and the element formation layer 113. 01 is formed, and a metal oxide film is provided between the peeling layer 201 and the element forming layer 113, and the metal oxide The film is weakened by crystallization, and a portion of the peeling layer 201 is removed by a solution or NF3, BrF3, ClF3, etc. After being removed by etching with halogen fluoride gas, in the weakened metal oxide film A method of peeling, or mechanically removing the fabricated substrate 200 on which the element formation layer 113 is formed. These can be removed by etching with solutions or halogenated fluoride gases such as NF3, BrF3, and ClF3. Methods such as the following can be used as appropriate. In addition, nitrogen, oxygen, or hydrogen can be used as the peeling layer 201. Films containing (for example, amorphous silicon films containing hydrogen, hydrogen-containing alloy films, oxygen-containing alloy films, etc.) Using this method, the peeling layer 201 is irradiated with laser light to remove nitrogen, oxygen, and other elements contained within the peeling layer 201. This method involves releasing hydrogen as a gas to promote the separation of the element formation layer 113 from the fabricated substrate 200. You may also use [this].

[0065] By combining the above peeling methods, the transfer process can be performed more easily. For example, Laser irradiation, etching of the stripping layer 201 with gas or solution, sharp knife or scalpel Mechanical removal is performed using a method that makes it easier to separate the peeling layer 201 and the element formation layer 113. Afterward, the peeling can also be performed using physical force (such as machinery).

[0066] Furthermore, the liquid is permeated into the interface between the release layer 201 and the element formation layer 113 from the fabricated substrate 200. The element formation layer 113 may be peeled off.

[0067] Next, the fabricated substrate 200 is peeled off, exposing the release layer 201 or the insulating layer 112. The element forming layer 113 is then coated with a second adhesive 204, which is different from the first adhesive 203. The tick substrate 110 is then bonded in place (see Figure 3(C)).

[0068] The second adhesive 204 includes reaction-curing adhesives, thermosetting adhesives, and UV-curing adhesives. Various types of curing adhesives can be used, such as light-curing adhesives and anaerobic adhesives.

[0069] As the plastic substrate 110, various substrates having flexibility and light transmission, and organic resins Films and the like can be used. Alternatively, a structure made of fibrous material and organic resin is also acceptable. i. If a structure made of fiber and organic resin is used as the plastic substrate 110, then bending This configuration is preferable because it improves resistance to damage and enhances reliability.

[0070] Furthermore, fibers are used as a film that serves the dual role of both the second adhesive 204 and the plastic substrate 110. A structure made of a body and an organic resin can be used. In this case, the organic resin of the structure is Therefore, by applying additional treatments such as reaction-curing resins, thermosetting resins, and UV-curing resins... It's best to use something that hardens over time.

[0071] After bonding the plastic substrate 110 to the element formation layer 113, the first adhesive 203 is dissolved. Alternatively, remove the temporary support substrate 202 by plasticizing it. The first adhesive 203 is placed in a solvent such as water so that the first pixel electrode 117 of the light-emitting element is exposed. Remove it (see Figure 3(D)).

[0072] As described above, the first image of the color filter 116, TFTs 114 and 115, and light-emitting element A device formation layer 113 on which the element electrodes 117 etc. are formed is fabricated on a plastic substrate 110. It is possible.

[0073] Once the surface of the first pixel electrode 117 is exposed, the EL layer 119 is then deposited. The 19 layered structures are not particularly limited, and include layers containing materials with high electron transport properties, hole transport properties A layer containing a material with high electron injection, a layer containing a material with high hole injection, Layers containing bipolar materials (materials with high electron and hole transport properties) are appropriately combined. It is sufficient to construct such a layer. For example, a hole injection layer, a hole transport layer, an emissive layer, an electron transport layer, an electron injection layer, etc. These can be combined as appropriate to form the configuration. In this embodiment, the EL layer 119 is a hole injection layer The following describes a configuration having layers, a hole transport layer, a light-emitting layer, and an electron transport layer. The fees are described below in detail.

[0074] The hole injection layer is a layer located in contact with the anode and contains a material with high hole injection potential. These include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, Alternatively, manganese oxides, etc., can be used. In addition, phthalocyanine (abbreviated as H2Pc ), phthalocyanine compounds such as copper phthalocyanine (CuPc), 4,4'-bis[N -(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPA) B) 4,4'-bis(N-{4-[N-(3-methylphenyl)-N-phenylamino Aromatic amines such as phenyl-N-phenylamino (biphenyl)biphenyl (abbreviation: DNTPD) Compound, or poly(ethylenedioxythiophene) / poly(styrenesulfonic acid) (PE A hole injection layer can also be formed using polymers such as DOT / PSS.

[0075] Furthermore, as a hole injection layer, a composite material containing an acceptor substance in addition to a material with high hole transport properties is used. Composite materials can be used. Furthermore, substances with high hole transport properties may contain acceptor substances. By using a modified material, the material used to form the electrodes can be selected regardless of the work function of the electrodes. This is possible. In other words, not only materials with a large work function can be used as the anode, but also materials with a small work function. It can be used as an acceptor substance. 2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, etc. These can be listed. Also, transition metal oxides can be listed. Furthermore, the periodic table of elements... Examples include oxides of metals belonging to groups 4 through 8 in the region. Specifically, acids Vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide Ten, manganese oxide, and rhenium oxide are preferred due to their high electron-accepting properties. Among them, oxid Molybdenum is preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle.

[0076] Examples of highly hole-transporting materials used in composite materials include aromatic amine compounds and carbazoles. Derivatives, aromatic hydrocarbons, polymer compounds (oligomers, dendrimers, polymers, etc.) Various organic compounds can be used. The degree of movement is 10 -6 cm 2 It is preferable that the value is greater than or equal to / Vs. However, the transport of holes is more important than the transport of electrons. Other materials may be used if they have high performance. Below, we will discuss materials used in composite materials. List the specific organic compounds that can perform this action.

[0077] For example, an aromatic amine compound is N,N'-di(p-tolyl)-N,N'-diph Phenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4- Diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4 ,4'-bis(N-{4-[N-(3-methylphenyl)-N-phenylamino]phen 1,3,5-Tris[N]-N-phenylamino)biphenyl (abbreviation: DNTPD), 1,3,5-Tris[N -(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3) Examples include B).

[0078] Furthermore, as a carbazole derivative, there is 3-[N-(9-phenylcarbazole-3-I [Phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA1), 3 ,6-bis[N-(9-phenylcarbazole-3-yl)-N-phenylamino]-9 -Phenylcarbazole (abbreviation: PCzPCA2), 3-[N-(1-naphthyl)-N- (9-phenylcarbazole-3-yl)amino]-9-phenylcarbazole (abbreviation: PCzPCN1), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 1 ,3,5-Tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl-9-antryl)phenyl]-9H-carbazole (abbreviation) :CzPA), 1,4-bis[4-(N-carbazolyl)phenyl]-2,3,5,6- Examples include tetraphenylbenzene.

[0079] Furthermore, as an aromatic hydrocarbon, there is 2-tert-butyl-9,10-di(2-naphthyl ) Anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(1- Naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (Abbreviation: DPPA), 2-tert-butyl-9,10-bis(4-phenylphenyl) Anthracene (abbreviation: t-BuDBA), 9,10-di(2-naphthyl)anthracene ( Abbreviations: DNA), 9,10-diphenylanthracene (abbreviations: DPAnth), 2-te rt-butylanthracene (abbreviation: t-BuAnth), 9,10-bis(4-methyl- 1-Naphthyl)anthracene (abbreviation: DMNA), 2-tert-butyl-9,10-butyl Su[2-(1-naphthyl)phenyl]anthracene, 9,10-bis[2-(1-naphthyl] Phenyl anthracene, 2,3,6,7-tetramethyl-9,10-di(1-naph (Tyl)anthracene, 2,3,6,7-tetramethyl-9,10-di(2-naphthyl) Ntracene, 9,9'-biantryl, 10,10'-diphenyl-9,9'-biant Lil, 10,10'-bis(2-phenylphenyl)-9,9'-biantrill, 10, 10'-Bis[(2,3,4,5,6-pentaphenyl)phenyl]-9,9'-bian Trill, anthracene, tetracene, rubrene, perylene, 2,5,8,11-tetra( Examples include tert-butyl)perylene. In addition, pentacene, coronene, etc. It can be used. Furthermore, when the above aromatic hydrocarbon is deposited by vapor deposition, From the perspective of vapor deposition properties during deposition and film quality after film formation, the number of carbon atoms forming the condensed ring is 14 to 42. It is preferable that it be so.

[0080] Furthermore, aromatic hydrocarbons that can be used in composite materials may have a vinyl skeleton. i. Examples of aromatic hydrocarbons having a vinyl group include 4,4'-bis(2,2- Diphenylvinyl)biphenyl (abbreviation: DPVBi), 9,10-bis[4-(2,2- Examples include diphenylvinyl)phenyl]anthracene (abbreviation: DPVPA).

[0081] Furthermore, as polymer compounds, poly(N-vinylcarbazole) (abbreviation: PVK), Li(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[N-(4-{N'- [4-(4-diphenylamino)phenyl]phenyl-N'-phenylamino}phenyl )methacrylamide] (abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)] Examples include [(nyl)-N,N'-bis(phenyl)benzidine] (abbreviated as Poly-TPD). It is possible.

[0082] The hole transport layer is a layer containing a substance with high hole transport properties. For example, 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl( Abbreviation: NPB), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1 ,1'-biphenyl]-4,4'-diamine (abbreviation: TPD), 4,4',4''-tri (N,N-diphenylamino)triphenylamine (abbreviation: TDATA), 4,4', 4’’-Tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA), 4,4’-bis[N-(spiro-9,9’-bifluorene- 2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB), and other aromatic amine compounds and the like can be mentioned. The substances described here mainly have a hole mobility -6 of 10 2 cm / Vs or more. However, as long as it is a substance with higher hole transportability than electrons, other substances may be used. Note that the layer containing a substance with high hole transportability may be not only a single layer, but also a layer formed by laminating two or more layers of the above substances.

[0083] Also, as the hole transport layer, a polymer compound such as poly(N-vinylcarbazole) (abbreviation: PVK) or poly( 4-vinyltriphenylamine) (abbreviation: PVTPA) can be used.

[0084] The light-emitting layer is a layer containing a light-emitting substance. As the type of the light-emitting layer, it can be either a so-called single-layer light-emitting layer mainly composed of a light-emitting substance or a so-called host-guest type light-emitting layer in which a light-emitting substance is dispersed in a host material. It is preferable that the light emitted from the light-emitting layer covers the visible light region as widely as possible, or gives peaks in the wavelength ranges of red, blue, and green respectively. For example, a light-emitting layer containing a light-emitting substance having a broad emission spectrum (see Fig. 6(A)), a light-emitting layer containing a plurality of light-emitting substances having different emission wavelength ranges (see Fig. 6 (B)), a light-emitting layer composed of a plurality of layers and each layer contains a light-emitting substance having a different emission wavelength range (see Fig. 6 (C)), etc. can be mentioned. Also, combining these (see Fig. 6(A)), a light-emitting layer containing a plurality of light-emitting substances having different emission wavelength ranges (see Fig. 6 (B)), a light-emitting layer composed of a plurality of layers and each layer contains a light-emitting substance having a different emission wavelength range (see Fig. 6 (C)), etc. can be mentioned. Also, combining these This is also possible. In Figures 6(A) to 6(C), 600 is the first pixel electrode of the light-emitting element. 601 is the second pixel electrode of the light-emitting element, 602 is the EL layer, 603, 603-1, 603- 2 represents the light-emitting layer, and 604, 604-1, and 604-2 represent the light-emitting material.

[0085] In the case of configurations like those in Figures 6(B) and 6(C), the light-emitting materials have different wavelength ranges (in the figure) So, the combinations of luminescent material 604-1 and luminescent material 604-2 (not necessarily limited to two types) are... Methods that combine two types of light-emitting substances that are complementary colors (for example, blue and yellow), or red, A common method involves combining three colors: blue, green, and blue.

[0086] Using a configuration like that shown in Figure 6(C), a field is created that combines two types of luminescent materials that are complementary in color. In this case, as shown in Figure 7(A), the light-emitting layer 603 is moved from the first pixel electrode 600 side to the first light-emitting layer 6 It has a three-layer structure consisting of 03-1, a second light-emitting layer 603-2, and a third light-emitting layer 603-3, and Layers containing light-emitting material 604-1 that emit light of a specific wavelength (first light-emitting layer 603-1, third light-emitting layer) 603-3) A layer containing a light-emitting material 604-2 that emits long wavelength light (second light-emitting layer 603- It is preferable to have a configuration with (2) sandwiched in between. Note that in the configuration of Figure 7(A), each light-emitting layer The transportability of the layer containing the luminescent material 604-2 is adjusted by appropriately selecting the host material. The interface on the second pixel electrode 601 side in the second light-emitting layer 603-2 (second light-emitting layer 60 (Ensure that electron-hole recombination occurs near the interface between 3-2 and the third light-emitting layer 603-3.) By using such a configuration, the lifespan of the light-emitting element is improved and the emission of long-wavelength light-emitting material is enhanced. This makes it easier to balance the emission with that of short-wavelength light-emitting materials.

[0087] Furthermore, "the transport properties of each light-emitting layer can be adjusted by appropriately selecting the host material to produce long wavelengths." Recombination of electrons and holes near the interface on the second pixel electrode side in a layer containing light-emitting material. To make this happen, the first pixel electrode 600 is the anode and the second pixel electrode 601 is the cathode. In this case, the second pixel electrode 601 side includes a light-emitting material 604-1 that emits short-wavelength light. The transport properties of the layer (third light-emitting layer 603-3) are electron transport properties, and the light emission on the anode side is short-wavelength light emission. A layer containing substance 604-1 (first light-emitting layer 603-1) and a light-emitting substance 6 that emits long-wavelength light The transport properties of the layer containing 04-2 (the second light-emitting layer 603-2) should be set to hole transport properties. When the first pixel electrode 600 is used as the cathode and the second pixel electrode 601 is used as the anode, the transport properties are reversed. They should be paired.

[0088] As a result, in the layer containing a light-emitting material that emits long wavelength light (second light-emitting layer 603-2) Regeneration occurs near the cathode-side interface (the interface between the second light-emitting layer 603-2 and the third light-emitting layer 603-3). Electrons that did not participate in the reaction are absorbed into the layer containing light-emitting material that emits short-wavelength light on the anode side (first light emission). Layer 603-1) will give it another opportunity to participate in recombination. The rear (electrons or holes) pass through to a carrier transport layer that has the opposite carrier transport properties. This can reduce degradation caused by this process and improve the lifespan of the light-emitting element. You will be able to do that.

[0089] Furthermore, the energy obtained from the recombination of holes and electrons can be used to produce short-wavelength light in a substance. In some cases, the light may move to a substance that emits long-wavelength light. The intensity became too strong, making it difficult to balance with short-wavelength light, but the above configuration was adopted. This involves recombination near the interface between the second light-emitting layer 603-2 and the third light-emitting layer 603-3. The electrons that were not present in the anode side are in the layer containing a light-emitting material that emits short-wavelength light (first light-emitting layer 603-1 ) can be recombined and emit short-wavelength light. Therefore, it is easier to balance the emission. Furthermore, it becomes easier to obtain light emission of the desired color.

[0090] In this configuration, the first light-emitting layer 603-1 and the second light-emitting layer 603-2 emit light Anthracite, as a host material in which photomaterials are dispersed, possesses both hole transport and electron transport properties. When using sen derivatives, a more effective improvement in lifespan can be obtained.

[0091] Furthermore, using a configuration like that shown in Figure 6(C), a combination of three types of light-emitting materials—red, green, and blue—is used. In this case, as shown in Figure 7(B), the light-emitting layer 603 is moved from the first pixel electrode 600 side to the first light-emitting layer 603-1, second light-emitting layer 603-2, third light-emitting layer 603-3, and fourth light-emitting layer 60 It has a four-layer structure consisting of 3-4, and the layer containing the blue light-emitting material 604-5 (first light-emitting layer 603 -1, the fourth light-emitting layer 603-4) contains a layer containing green light-emitting material 604-7 (third light-emitting layer 6 03-3) A structure sandwiching a layer containing a red light-emitting substance 604-6 (second light-emitting layer 603-2) It is preferable to have this configuration. In the configuration shown in Figure 7(B), the transport properties of each light-emitting layer are adjusted. The electron-hole recombination region is then formed in the layer containing the blue light-emitting material 604-5 on the cathode side (the fourth light-emitting layer). The layer 603-4) and the layer containing the green light-emitting material 604-7 (third light-emitting layer 603-3) The interface is considered to be near the interface. A light-emitting element having such a configuration has improved lifespan and emits light on the longer wavelength side. This makes it easier to balance the emission of high-quality light with the emission of light from short-wavelength light-emitting materials.

[0092] Furthermore, the recombination region is located near the interface between the fourth light-emitting layer 603-4 and the third light-emitting layer 603-3. To do this, if the first pixel electrode 600 is the anode and the second pixel electrode 601 is the cathode, The transport properties of the layer containing the blue light-emitting material 604-5 on the pole side (fourth light-emitting layer 603-4) are used to determine electron transport. A layer containing a green light-emitting substance 604-7 (third light-emitting layer 603-3), and a red light-emitting substance. A layer containing 604-6 (second light-emitting layer 603-2), and the blue light-emitting material 604- on the anode side. The transport properties of the layer containing 5 (first light-emitting layer 603-1) should be hole transport properties. First pixel When electrode 600 is the cathode and the second pixel electrode 601 is the anode, the transport properties of each layer are reversed. This is sufficient. Furthermore, the transportability of each light-emitting layer depends on the transportability of the substance most abundant in that light-emitting layer. That can be decided.

[0093] This results in a layer containing the blue light-emitting material 604-5 on the cathode side (the fourth light-emitting layer 603-4). Recombination occurs near the interface of the layer containing the green light-emitting substance 604-7 (third light-emitting layer 603-3). Electrons that were not involved were in the layer containing the blue light-emitting material 604-5 on the anode side (first light-emitting layer 60 3-1) This gives the carrier another opportunity to participate in recombination. This occurs when a hole (or electron) escapes into a carrier transport layer that has the opposite carrier transport properties. This can reduce the degradation caused by this and improve the lifespan of the light-emitting element. You will be able to do it.

[0094] Furthermore, the energy obtained from the recombination of holes and electrons can be used to produce short-wavelength light in a substance. In some cases, the light may move to a substance that emits long-wavelength light. The intensity of the light became too strong, making it difficult to balance with short-wavelength light, but the structure described above was adopted. As a result, electrons that did not participate in recombination form a layer containing the blue light-emitting material 604-5 on the anode side. (The first light-emitting layer 603-1) recombines to emit short-wavelength light, therefore, It becomes easier to achieve balance and obtain the desired color of light emission.

[0095] There are no restrictions on the luminescent material used; any known fluorescent or phosphorescent material can be used. It is possible. Examples of fluorescent substances include N,N'-bis[4-(9H-carbazole-9 -yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: Y GA2S), 4-(9H-carbazole-9-yl)-4'-(10-phenyl-9-yl) In addition to triphenylamine (abbreviated as YGAPA), etc., the emission wavelength is 450 nm or less. The above 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-yl) Tolyl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4 -(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine( Abbreviation: PCAPA), Perylene, 2,5,8,11-Tetra-tert-butylperylene (Abbreviation: TBP), 4-(10-phenyl-9-antryl)-4'-(9-phenyl- 9H-carbazole-3-yl)triphenylamine (abbreviation: PCBAPA), N,N' '-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene) Bis[N,N',N'-triphenyl-1,4-phenylenediamine] (abbreviation: DPAB) PA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl) [enyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N-[4-(9 ,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1 ,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N '',N''',N'''-Octaphenyldibenzo[g,p]chrysene-2,7,10 ,15-tetraamine (abbreviation: DBC1), coumarin 30, N-(9,10-diphenyl -2-anthryl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2 PCAPA), N-[9,10-bis(1,1'-biphenyl-2-yl)-2-ant [Lyl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPh) A) N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl -1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(1,1 '-biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1, 4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(1,1'-bis( (phenyl-2-yl)-N-[4-(9H-carbazole-9-yl)phenyl]-N-f Phenylanthracene-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenyl Luanthracene-9-amine (abbreviation: DPhAPhA) Coumarin 545T, N,N'-di Phenylquinacridone (abbreviation: DPQd), rubren, 5,12-bis(1,1'-bis) Phenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2- {2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4 - Iridene)propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-( 2,3,6,7-Tetrahydro-1H,5H-Benzo[ij]quinoridine-9-yl) [Tenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N, N,N',N'-Tetrakis(4-methylphenyl)tetracene-5,11-diamine ( Abbreviation: p-mPhTD), 7,13-diphenyl-N,N,N',N'-tetrakis(4 -methylphenyl)acenaphtho[1,2-a]fluorantene-3,10-diamine (abbreviated) Name: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-teto Lamethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9 [-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJ) TI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2 ,3,6,7-tetrahydro-1H,5H-benzo[ij]quinoridine-9-yl)ethyl [Nyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2- (2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran- 4-Iridene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2- (8-Methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H ,5H-benzo[ij]quinoridine-9-yl)ethenyl]-4H-pyran-4-ylide Examples include propanedinitrile (abbreviation: BisDCJ™). Phosphorescent substances For example, bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium(III) tetrakis(1-pyrazolyl) borate (abbreviation: Fir6) In addition, there are bis[2-(4',6'-di] whose emission wavelength is in the range of 470nm to 500nm. Fluorophenyl)pyridinate-N,C2’ Iridium(III) picolinate (abbreviation) :FIrpic), bis[2-(3',5'-bistrifluoromethylphenyl)pyrid Nato-N,C 2’ Iridium(III) picolinate (abbreviation: Ir(CF3ppy)2) (pic)), bis[2-(4',6'-difluorophenyl)pyridinate-N,C 2’ Iridium(III) acetylacetonate (abbreviation: FIracac), emission wavelength is 5 Tris(2-phenylpyridinato)iridium(III) with a wavelength of 00 nm (green emission) or higher. Abbreviation: Ir(ppy)3), bis(2-phenylpyridinato)iridium(III) acetate Ir(ppy)2(acac), Tris(acetylacetonate) (Monophenanthroline) Terbium(III) (Abbreviation: Tb(acac)3(Ph) en)), Bis(benzo[h]quinolinate)iridium(III)acetylacetonate (Abbreviation: Ir(bzq)2(acac)), bis(2,4-diphenyl-1,3-oxa) Zolato-N,C 2’ Iridium(III) acetylacetonate (abbreviation: Ir(dpo) )2(acac)), bis[2-(4'-perfluorophenylphenyl)pyridinate] Iridium(III) acetylacetonate (abbreviation: Ir(p-PF-ph)2(aca) c)), bis(2-phenylbenzothiazolat-N,C) 2’ Iridium(III) acetate Tylacetonate (abbreviation: Ir(bt)2(acac)), bis[2-(2'-benzo[ 4,5-α]thienyl)pyridinate-N,C 3’ Iridium(III) acetylacetate Nat (abbreviation: Ir(btp)2(acac)), bis(1-phenylisoquinolinate- N,C 2’ Iridium(III) acetylacetonate (abbreviation: Ir(piq)2(a cac)), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quino [Xalinat] Iridium(III) (abbreviation: Ir(Fdpq)2(acac)), (Acetyl) Iridium(III) (Tylacetonato)bis(2,3,5-triphenylpyradinato) Abbreviation: Ir(tppr)2(acac)), 2,3,7,8,12,13,17,18- Octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP), Tri (1,3-diphenyl-1,3-propanedionato)(monophenanthroline)Euro Pium(III) (abbreviation: Eu(DBM)3(Phen)), Tris[1-(2-Tenoy) Europium (-3,3,3-trifluoroacetonate) (monophenanthroline) III) (abbreviation: Eu(TTA)3(Phen)) are examples of such materials. From among other known materials, the emission color (or peak wavelength of emission) in each emission layer is You should consider these factors when making your choice.

[0096] When using a host material, for example, tris(8-quinolinolato)aluminum(III (Abbreviation: Alq), Tris(4-methyl-8-quinolinolato)aluminum(III) (Abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium ( II) (Abbreviation: BeBq2), bis(2-methyl-8-quinolinolate)(4-phenyl Aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc (II) (Abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolate]zinc ( II) (Abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolate]zinc ( II) Metal complexes such as (abbreviation: ZnBTZ), 2-(4-biphenylyl)-5-(4-t ert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3- Bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazole-2-I [L]benzene (abbreviation: OXD-7), 3-(4-biphenylyl)-4-phenyl-5-( 4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 2,2 ',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzoyl) Midazole (abbreviation: TPBI), vasophenanthroline (abbreviation: BPhen), vasoquinol suproine (abbreviation: BCP), 9-[4-(5-phenyl-1,3,4-oxadiazo Heterocyclic compounds such as 2-yl)phenyl]-9H-carbazole (abbreviation: CO11) Examples include aromatic amine compounds such as NPB (or α-NPD), TPD, and BSPB. Also, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives Examples include condensed polycyclic aromatic compounds such as dibenzo[g,p]chrysene derivatives, and specifically, , 9,10-diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9 -[4-(10-phenyl-9-antryl)phenyl]-9H-carbazole-3-a Min (abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenyl Min (abbreviation: DPhPA), 4-(9H-carbazole-9-yl)-4'-(10-fu Phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), N,9-diphenyl Lu-N-[4-(10-phenyl-9-antryl)phenyl]-9H-carbazole- 3-amine (abbreviation: PCAPA), N,9-diphenyl-N-{4-[4-(10-phenyl -9-anthryl)phenyl]phenyl}-9H-carbazole-3-amine (abbreviation : PCAPBA), N,9-diphenyl-N-(9,10-diphenyl-2-anthryl )-9H-carbazole-3-amine (abbreviation: 2PCAPA), 6,12-dimethoxy- 5,11-diphenylchrysene, N,N,N’,N’,N’’,N’’,N’’’,N’ ’’-octaphenyldibenz[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthryl)phenyl]-9H -carbazole (abbreviation: CzPA), 3,6-diphenyl-9-[4-(10-phenyl -9-anthryl)phenyl]-9H-carbazole (abbreviation: DPCzPA), 9,10 -bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-di (2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di (2-naphthyl)anthracene (abbreviation: t-BuDNA), 9,9’-bianthryl (abbre iation: BANT), 9,9’-(stilbene-3,3’-diyl)diphenanthrene (abbreviation : DPNS), 9,9’-(stilbene-4,4’-diyl)diphenanthrene (abbreviation: DPNS2), 3,3’,3’’-(benzene-1,3,5-triyl)tripyrene (abbre iation: TPB3), etc. can be mentioned. The host material can be selected from these and known substances, and should have an energy gap (triplet energy in the case of phosphorescent emission) larger than the energy gap (triplet energy) of the luminescent substance dispersed in the light-emitting layer, and should exhibit the carrier transport property that each light-emitting layer should have.

[0097] The electron transport layer is a layer containing a material with high electron transport properties. For example, tris(8-quinolino Aluminum (abbreviation: Alq), Tris(4-methyl-8-quinolinolato)aluminum Nium (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryl Um (abbreviation: BeBq2), bis(2-methyl-8-quinolinolate)(4-phenylphenate ninoline skeleton or benzoquinoline skeleton, such as nonaluminum (abbreviation: BAlq) It is a layer made of a metal complex having bis[2-(2-hydroxyphenic acid]. [Zinc (abbreviation: Zn(BOX)2), bis[2-(2-hydroxyl)] Oxazole compounds such as cyphenyl)benzothiazolat]zinc (abbreviation: Zn(BTZ)2) Furthermore, metal complexes having thiazole ligands can also be used. In addition, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3, 4-Oxadiazole (abbreviated as PBD) and 1,3-bis[5-(p-tert-butyl Phenyl)-1,3,4-oxadiazole-2-yl]benzene (abbreviation: OXD-7) , 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)- 1,2,4-Triazole (abbreviation: TAZ), Vasophenanthroline (abbreviation: BPhen) ), vasocuproine (abbreviated as BCP), etc. can also be used. , mainly 10 -6 cm 2 It is a substance with an electron mobility of / Vs or greater. Any material with high electron transport capabilities may be used as the electron transport layer, other than those mentioned above.

[0098] Furthermore, the electron transport layer is not only a single layer, but also consists of two or more layers made of the above material stacked together. It may be considered as such.

[0099] Furthermore, a layer for controlling electron movement may be provided between the electron transport layer and the light-emitting layer. The layer that controls the movement of the offspring is a layer containing a material with high electron transport capabilities as described above, and an electron transport layer This is a layer to which a small amount of a highly optimizing substance has been added. The layer that controls the movement of electrons controls the movement of electrons. By suppressing this, it becomes possible to adjust the career balance. This is a problem that arises when electrons penetrate the light-emitting layer (for example, a decrease in the device's lifespan). It is highly effective in suppressing )

[0100] Furthermore, an electron injection layer may be provided in contact with the cathode electrode. As the electron injection layer, Potassium metals, alkaline earth metals, or lithium fluoride (LiF), cesium fluoride (CsF) ), alkali metals or alkaline earth metals such as calcium fluoride (CaF2) Compounds can be used. For example, an alkali in a layer made of an electron-transporting material. A substance containing metals, alkaline earth metals, or compounds thereof, for example, magnesium in Alq. Materials containing magnesium (Mg), etc., can be used. Furthermore, as the electron injection layer, A layer made of an electron-transporting material containing alkali metals or alkaline earth metals. By using this material, electron injection from the cathode can be performed efficiently.

[0101] As the material that forms the second pixel electrode 601, the second pixel electrode 601 is used as the cathode. If present, metals, alloys, and electrical conductive materials with a small work function (specifically, 3.8 eV or less) Compounds, or mixtures thereof, etc. can be used. Specific examples of such cathode materials and include elements belonging to Group 1 or Group 2 of the periodic table, that is, alkali metals such as lithium (Li) and cesium (Cs), and alkaline earth metals such as magnesium (Mg), calcium (Ca), strontium (Sr), etc., or alloys containing these (such as MgAg, AlLi, etc.), or rare earth metals such as europium (Eu), ytterbium (Yb), or alloys containing these, etc. However, by providing an electron injection layer between the cathode and the electron transport layer, regardless of the work function value, various conductive materials such as Al, Ag, ITO, indium tin oxide containing silicon or silicon oxide, etc. can be used as the cathode. The films of these conductive materials can be formed using sputtering, inkjet printing, spin coating, etc.

[0102] When the second pixel electrode 601 is used as the anode, it is preferable to use a metal, alloy, conductive compound, or mixture thereof, etc. with a large work function (specifically 4.0 eV or more). Specifically, for example, indium tin oxide (ITO: Indium Tin Oxide), indium tin oxide containing silicon or silicon oxide, indium zinc oxide (IZO: Indium Zinc Oxide), indium oxide containing tungsten oxide and zinc oxide (IWZO), etc. can be mentioned. These conductive metal oxide films are usually formed by sputtering, but may also be produced by applying sol-gel methods, etc. For example, indium zinc oxide (IZO) is indium oxide Using a target to which 1-20 wt% zinc oxide has been added to the cinnabar, the sputtering method is used. It can be formed. Also, indium oxide containing tungsten oxide and zinc oxide. (IWZO) is composed of 0.5-5 wt% tungsten oxide and zinc oxide relative to indium oxide. It can be formed by a sputtering method using a target containing 0.1 to 1 wt% of [the substance]. In addition, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), and chromium are also used. (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium Examples include phosphate (Pd) or metallic nitrides (e.g., titanium nitride). Also, as mentioned above. By placing the composite material in contact with the anode, the anode material can be used regardless of the work function. You can choose.

[0103] Furthermore, the EL layer described above is located between the first pixel electrode 600 and the second pixel electrode 601, as shown in Figure 8. Multiple layers may be stacked. In this case, between the stacked EL layer 800 and EL layer 801 It is preferable to provide a charge generation layer 803. The charge generation layer 803 is made of the composite material described above. It can be formed. Also, the charge generation layer 803 is made of a layer of composite material and other materials It may have a laminated structure with other layers. In this case, the other layer may be made of an electric material. Layers containing a substance that promotes the development of new life and a substance with high electron transport properties, or layers made of transparent conductive materials, etc. It is possible to achieve this configuration, which combines high luminous efficiency with a long lifespan. A light-emitting element can be obtained. Furthermore, phosphorescence emission can be obtained in one EL layer and fluorescence emission in the other. It is also easy to do this. This structure can be used in combination with the EL layer structure described above. For example, lamination of an EL layer having the structure shown in Figure 6(C) and an EL layer having the structure shown in Figure 6(A). This is also possible. Specifically, in the EL layer 800 having the structure shown in Figure 6(C), blue and green light Light is obtained by fluorescence, and the EL layer 801 having the structure shown in Figure 6(A) is placed across the charge generation layer 803. And it can be easily achieved to obtain red light emission by phosphorescence. Similarly, the structure in Figure 6(C) In the EL layer 800 having the above, green and red light emission is obtained by phosphorescence, and with the charge generation layer 803 in between, Figure It is also easy to obtain blue light emission by fluorescence in the EL layer 801 having the structure of 6(A). This can be achieved. In particular, a configuration in which green and red light emission is obtained by phosphorescence and blue light emission is obtained by fluorescence is effective in luminescence This is preferable because it yields white light emission with a good balance of ratios.

[0104] As described above, a light-emitting device like those shown in Figures 1(A) to (C) can be manufactured.

[0105] After the element formation layer and light-emitting element are formed, an organic resin is used as shown in Figures 4(A) and (B). By enclosing the light-emitting element with a protective film 401, etc., the light-emitting element is isolated from the outside, It is preferable to prevent substances that promote the degradation of the EL layer from entering. Also, organic resin 400 or Instead of the protective film 401, a sealing substrate may be used. However, if it is necessary to connect to an FPC or the like later... It is not necessary to provide a protective film 401 to essential input and output terminals.

[0106] The light-emitting device of this embodiment emits light from the plastic substrate 110 side through a color filter. To provide an image, the aforementioned organic resin 400, protective film 401, and encapsulating substrate are colored. Alternatively, materials that do not easily transmit visible light can also be used. On the other hand, these organic trees When light-transmitting materials are used for the lipid 400, protective film 401, and sealing substrate, the second pixel electrode is If fabricated using light-transmitting materials and shapes, it can provide a monochrome image from the encapsulated substrate side as well. This is possible. The sealing substrate can be the same as the plastic substrate 110. .

[0107] Next, an anisotropic conductive material is used to connect each electrode of the input / output terminal section to FPC402 (flexible printed circuit board). Attach the circuit board. You can also mount IC chips or other components if necessary.

[0108] The above steps complete the module of the light-emitting device to which the FPC402 is connected.

[0109] Furthermore, the semiconductor layer of the TFT in the light-emitting device of this embodiment may undergo high-temperature treatment or laser irradiation. If shooting is not performed, a configuration like that shown in Figure 2 can be adopted.

[0110] In the configuration shown in Figure 2, adhesive 111 is provided on the plastic substrate 110, and a first insulating layer 1 The element formation layer on 12 and the plastic substrate 110 are bonded together. And then, the color filter 300 is provided on the first insulating layer 112 and on the color filter 300 The TFT 302 is provided via a second insulating layer 301. The second insulating layer 301 is Inorganic silicon oxide, silicon oxide nitride, silicon nitride, or silicon nitride oxide It may be formed by edge material, or by organic insulating material such as acrylic or polyimide. It is possible to do so, but if organic insulating material is used, the step caused by providing the color filter 300 This configuration is preferable because it can mitigate the difference. Also, the color filter 300 emits To prevent pollutants such as generated gases from adversely affecting the TFT302, a second insulating layer 30 1. Preferably, a protective insulating film is provided on top. The protective insulating film is silicon oxide, silicon oxide, silicon nitride Formed from inorganic insulating materials such as silicon, silicon nitride, or silicon nitride oxide. This is good. In particular, silicon nitride and silicon nitride oxide, which contains more nitrogen than oxygen, are suitable. It can be used. Furthermore, if the second insulating layer 301 is formed of an inorganic insulating film, A protective insulating film is not necessarily required.

[0111] Similar to Figures 1(A) to (C), a release layer and a first insulating layer 11 are placed on a fabricated substrate with low flexibility. After providing 2, the color filter 300 and the second insulating layer 301 are formed, and then the TFT 302 TFT302 can be fabricated using known methods and structures that do not require high-temperature processing. For example, the above-mentioned microcrystalline semiconductors, amorphous semiconductors, oxide semiconductors, and organic materials are mainly used. Examples include TFTs that use semiconductors such as [specific semiconductors] as semiconductor layers. TFT302 is formed and Once the first pixel electrode 303 and partition wall 304 of the optical element are formed, they are peeled off as described above, and By transferring it to a plastic substrate 110, a light-emitting device can be fabricated in the same manner as the light-emitting device in Figure 1. ru.

[0112] In a light-emitting device having such a structure, the color filter 3 is made only of the second insulating layer 301. This can suppress the adverse effects of contaminants from 00 on the TFT302 and light-emitting elements. Therefore, it leads to a reduction in the process.

[0113] Of course, even in the configuration shown in Figure 2, a color filter is formed on a fabricated substrate with low flexibility. Therefore, similar to the configuration in Figure 1, even with a flexible light-emitting device, high-definition full color is possible. This configuration enables the creation of a light-emitting device capable of displaying information.

[0114] (Embodiment 2) Figure 4(A) shows a top view and a cross-sectional view of the light-emitting device module (also called an EL module). (B) is shown.

[0115] Figure 4(A) is a top view showing the EL module, and Figure 4(B) is Figure 4(A) cut along line A-A'. This is a diagram showing a portion of the cross-section. In Figure 4(A), the adhesive 500 (for example, the second An insulating layer 501 is provided on the plastic substrate 110 via an adhesive (or the like), and a drawing is placed on top of it. The element 502, source-side drive circuit 504, and gate-side drive circuit 503 are formed. These can be obtained by the manufacturing method shown in Embodiment 1.

[0116] Furthermore, 400 is an organic resin, 401 is a protective film, and the pixel section 502 and source-side drive circuit 5 04. The gate-side drive circuit 503 is covered with organic resin 400, and the organic resin 400 is retained It is covered with protective film 401. Furthermore, it may be sealed with a cover material using an adhesive. The material may be bonded as a support before delamination.

[0117] Note that 508 is a signal input to the source-side drive circuit 504 and the gate-side drive circuit 503. This is wiring for transmitting signals and serves as an external input terminal, FPC402 (Flexible Printed Circuit). It receives video and clock signals from the circuit. Note that here we are using the FPC402. Although not shown in the diagram, a printed circuit board (PWB) is attached to this FPC402. It may be included. The light-emitting device in the embodiment of the present invention includes not only the light-emitting device body, This also includes the state in which an FPC or PWB is attached.

[0118] Next, the cross-sectional structure will be explained using Figure 4(B). An insulating layer is in contact with the adhesive 500. A 501 is provided, and on the insulating layer 501, the pixel section 502 and the gate-side drive circuit 503 are formed The pixel section 502 includes a current control TFT 511 and its source electrode and drain. Multiple pixels 515, including a first pixel electrode 512 electrically connected to one of the electrodes, form This is accomplished. Note that Figure 4(B) shows one pixel 515, but the pixel section 502 In this case, the pixels 515 are arranged in a matrix. Also, the gate side drive The dynamic circuit 503 consists of multiple n-channel TFTs 513 and multiple p-channel TFTs 514 It is formed using a CMOS circuit that combines these elements.

[0119] (Embodiment 3) In this embodiment, the electronic device includes the light-emitting device shown in Embodiment 1 or Embodiment 2. I will explain.

[0120] As an example of an electronic device having a light-emitting device as shown in Embodiment 1 or Embodiment 2, Cameras such as digital cameras, goggle-type displays, navigation systems Audio equipment (car audio, audio components, etc.), computers, game equipment , personal digital assistants (mobile computers, mobile phones, portable game consoles, or e-readers, etc.) , an image playback device equipped with a recording medium (specifically, a Digital Versatile D (A device equipped with a display device capable of playing recording media such as ISC (DVD) and displaying the images thereof.) These are some examples. Specific examples of these electronic devices are shown in Figure 5.

[0121] Figure 5(A) shows a television device, consisting of a housing 9101, a support base 9102, a display unit 9103, and This television device includes a speaker unit 9104, a video input terminal 9105, etc. 03 is manufactured by using the light-emitting device shown in Embodiment 1 or Embodiment 2. A television device equipped with a light-emitting device capable of flexible and high-definition full-color display. Furthermore, the display unit 9103 can have a curved shape, and while achieving weight reduction, high performance We can provide video with high image quality.

[0122] Figure 5(B) is a computer, consisting of the main unit 9201, the casing 9202, the display unit 9203, and a key - Includes board 9204, external connection port 9205, pointing device 9206, etc. This computer has a light-emitting device shown in Embodiment 1 or Embodiment 2 on the display unit 9203. It is manufactured using a device that enables flexible and high-definition full-color display. A computer equipped with a light-emitting device can also have a curved display unit 9203. Furthermore, it is possible to provide high-quality video while achieving a lightweight design.

[0123] Figure 5(C) shows a mobile phone, consisting of the main unit 9401, the casing 9402, the display unit 9403, and the voice input. Power unit 9404, audio output unit 9405, operation key 9406, external connection port 9407, annealing This includes the Tena 9408, etc. This mobile phone has a display unit 9403 which is in Embodiment 1 or Embodiment It is manufactured using the light-emitting device shown in 2. Flexible and high-definition full-screen A mobile phone equipped with a light-emitting device capable of displaying light has a curved display unit 9403. This is also possible, and it is possible to provide high-quality video while achieving weight reduction. Lightweight mobile phones, while incorporating various added features, maintain a weight suitable for portability. This makes the mobile phone suitable as a high-performance mobile phone.

[0124] Figure 5(D) shows the camera, consisting of the main unit 9501, the display unit 9502, the housing 9503, and external connections. Port 9504, Remote control receiver 9505, Image receiver 9506, Battery 9507, Audio This camera includes an input unit 9508, operation keys 9509, an eyepiece unit 9510, etc. 502 is manufactured using the light-emitting device shown in Embodiment 1 or Embodiment 2. The camera, equipped with a light-emitting device capable of flexible and high-definition full-color display, The display unit 9502 can also have a curved shape, and while achieving weight reduction, it can also display high image quality. We can provide high-quality video.

[0125] Figure 5(E) shows a flexible display, consisting of a main unit 9601, a display unit 9602, and an external Includes a memory insertion section 9603, a speaker section 9604, operation keys 9605, etc. Main unit 96 Unit 01 includes a television receiving antenna, external input terminal, external output terminal, battery, etc. It may be installed. This flexible display has a display unit 9602 that is implemented in a certain manner. It is manufactured by using the light-emitting device shown in Embodiment 1 or Embodiment 2. Display unit 9602 It can have a curved shape and provides high-quality video while achieving a lightweight design. It is possible to also create a curved shape in the display section of the electronic device shown in Figures 5(A) to 5(D). By providing this and attaching the flexible display shown in Figure 5(E) to the display unit, the display This allows us to provide electronic equipment in which the indicator part has a curved shape.

[0126] As described above, the light-emitting element produced using the light-emitting element shown in Embodiment 1 or Embodiment 2 The device has an extremely wide range of applications, and this light-emitting device can be applied to electronic equipment in all fields. It is possible. [Explanation of Symbols]

[0127] 110 Plastic substrate 111 Adhesive 112 Insulating layer 113 Element Formation Layer 114 TFT 115 TFT in the drive circuit section 116 Color Filters 117 First pixel electrode 118 Bulkhead 119 EL layer 120 Second pixel electrode 121 Light-emitting element 122 First protective insulating film 123 Second protective insulating film 124 Color Filters 200 fabricated substrates 201 Exfoliation layer 202 Temporary support substrate 203 The first adhesive 204 Second adhesive 300 Color Filters 301 Insulating layer 302 TFT 303 First pixel electrode 304 Bulkhead 400 Organic resins 401 Protective film 402 FPC 500 Adhesives 501 Insulating layer 502 pixel section 503 Gate-side drive circuit 504 Source-side drive circuit 508 Wiring 511 Current-controlled TFT 512 First pixel electrode 513 n-channel TFT 514 p-channel TFT 600 First pixel electrode 601 Second pixel electrode 602 EL layer 603 Emitting layer 603-1 First light-emitting layer 603-2 Second light-emitting layer 603-3 Third luminescent layer 603-4 Fourth luminescent layer 604 Luminescent substances 604-1 Luminescent material 604-2 Luminescent material 604-5 Blue light-emitting substance 604-6 Red light-emitting substance 604-7 Green light-emitting substance 800 EL layer 801 EL layer 803 Charge generation layer 9101 enclosure 9102 Support stand 9103 Display section 9104 Speaker section 9105 Video input terminal 9201 Main Unit 9202 enclosure 9203 Display section 9204 Keyboard 9205 External connection port 9206 Pointing device 9401 Main Unit 9402 enclosure 9403 Display section 9404 Voice Input Section 9405 Audio output section 9406 Operation Keys 9407 External connection port 9408 Antenna 9501 Main Unit 9502 Display section 9503 enclosure 9504 External connection port 9505 Remote control receiver 9506 Image receiving unit 9507 Battery 9508 Voice Input Section 9509 Operation Keys 9510 Eyepiece 9601 Main Unit 9602 Display section 9603 External memory insertion slot 9604 Speaker section 9605 Operation Keys

Claims

[Claim 1] Plastic substrate and An insulating layer formed on the aforementioned plastic substrate via an adhesive, A thin-film transistor formed on the insulating layer, A protective insulating film formed on the thin-film transistor, A color filter formed on the protective insulating film, An interlayer insulating film formed on the color filter, A light-emitting device having a white light-emitting element formed on the interlayer insulating film and electrically connected to the thin-film transistor.

Images