Substrate processing apparatus, heat transfer member, and substrate processing method

Abstract

This invention provides a technology that can improve the separation between a heat transfer member and a member in contact with the heat transfer member. [Solution] A chamber, a substrate support part arranged inside the chamber, and a substrate support part arranged on the substrate support part A heat transfer member comprising an adhesive silicone-containing sheet, the heat transfer member comprising a silicone-containing The sheet comprises a heat transfer member whose upper surface is coated with a carbon-containing film, and a substrate treatment. The necessary equipment will be provided.

Description

Technical Field

[0001] Exemplary embodiments of the present disclosure relate to a substrate processing apparatus, a heat transfer member, and a substrate processing method.

Background Art

[0002] Patent Document 1 discloses a technique related to a heat transfer sheet containing silicon.

Prior Art Document

Patent Document

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of improving the separability between a heat transfer member and a member that abuts against the heat transfer member. .

Means for Solving the Problems

[0005] In one exemplary embodiment of the present disclosure, there is provided a substrate processing apparatus including a chamber, a substrate support portion disposed within the chamber, and a heat transfer member disposed on the substrate support portion, the heat transfer member including an adhesive silicon-containing sheet, and the silicon-containing sheet having an upper surface coated with a carbon-containing film. and the heat transfer member.

Effects of the Invention

[0006] According to one exemplary embodiment of the present disclosure, it is possible to provide a technique capable of improving the separability between a heat transfer member and a member that abuts against the heat transfer member. .

Brief Description of the Drawings

[0007] [Figure 1] This is a diagram illustrating an example configuration of a plasma processing system. [Figure 2] This is a diagram illustrating an example configuration of a capacitively coupled plasma processing apparatus. [Figure 3] This is a diagram illustrating an example of the configuration of a heat transfer component. [Figure 4] This is a diagram illustrating other configuration examples for heat transfer components. [Figure 5] This is a diagram illustrating other configuration examples for heat transfer components. [Figure 6] This is a diagram illustrating an example of the application of a heat transfer component. [Figure 7A] This is a diagram illustrating other application examples of heat transfer components. [Figure 7B] This is a diagram illustrating other application examples of heat transfer components. [Figure 8] This is a diagram illustrating other application examples of heat transfer components. [Figure 9] This is a flowchart to explain method MT1. [Figure 10] This is a schematic diagram illustrating each step of Method MT1. [Figure 11] This is a diagram illustrating other configuration examples for heat transfer components. [Figure 12] This is a flowchart to explain the MT2 method. [Figure 13] This is a schematic diagram illustrating each step of Method MT2. [Figure 14] This figure shows the measurement results of the tack force. [Figure 15] This figure shows the measurement results of the thermal resistance value. [Modes for carrying out the invention]

[0008] Each embodiment of this disclosure will be described in detail below with reference to the drawings. In this context, identical or similar elements are denoted by the same symbol, and redundant explanations are omitted. Unless otherwise specified. Unless otherwise specified, positional relationships such as up, down, left, and right are described based on the positional relationships shown in the drawings. The dimensions in the drawings are not to scale, and actual dimensions are not limited to those shown.

[0009] <Configuration Example of Plasma Processing System> FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a chamber 10, a substrate support unit 11, and a plasma generation unit 12. The chamber 10 has a plasma processing space. The chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas discharge port is connected to an exhaust system 40 described later. The substrate support unit 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space is capacitively coupled plasma (CCP), inductively coupled plasma (ICP), or electron cyclotron resonance (ECR) plasma. ​​​​​​Zuma, Helicon Wave Plasma (HWP), Or, surface wave plasma (SWP), etc. This is also acceptable. Furthermore, the AC (Alternating Current) plasma generation unit and D Various types of plasma generation, including a C (Direct Current) plasma generation unit. A composite unit may be used. In one embodiment, an AC signal used in the AC plasma generation unit AC power has frequencies within the range of 100kHz to 10GHz. Therefore, AC The signals include RF (Radio Frequency) signals and microwave signals. In the implementation configuration, the RF signal has a frequency within the range of 100 kHz to 150 MHz.

[0011] The control unit 2 causes the plasma processing apparatus 1 to perform the various processes described in this disclosure. It processes computer-executable instructions. The control unit 2 implements the various processes described here. Each element of the plasma processing apparatus 1 may be configured to be controlled in such a manner. In this configuration, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 is For example, this is implemented by computer 2a. The control unit 2 includes a processing unit 2a1, a storage unit 2a2 and The processing unit 2a1 described in this disclosure may include a communication interface 2a3. The functions that will be realized are general-purpose programmed to realize the functions described therein. Rosser, application processor, integrated circuit (integrated circuit) ,ASICs(Application Specific Integrated C IRCUITs), CPU (Central Processing Unit), conventional Conventional circuitry, and / or combinations thereof Circuits or processing circuits that include The processor may be implemented in a uitry. The processor uses transistors and other circuits. A circuit or processing circuit that includes other circuitry. This is a programmed processor that executes the program stored in memory unit 2a2. This is also acceptable. This program may be stored in memory unit 2a2 beforehand, and when needed. It may also be acquired via a medium. The acquired program is stored in the storage unit 2a2. The processing unit 2a1 reads from the storage unit 2a2 and executes the data. The medium is a computer. The storage medium may be any type of storage medium readable by the 2a, and the communication interface 2a3 It may also be a connected communication line. The memory unit 2a2 is RAM (Random Access). cess Memory), ROM (Read Only Memory), HDD (H ard Disk Drive), SSD (Solid State Drive), or This may include combinations of these. Communication interface 2a3 is LAN (Loc Communication between the plasma processing apparatus 1 and the other via a communication line such as an area network. You may believe it. In this disclosure, circuits, units, and means achieve the functions described. Hardware programmed to or configured to run The hardware in question is any hardware described in this disclosure, or the hardware described in this disclosure. Known as something that is programmed to perform or execute a given function. Any hardware may be used. The hardware in question is considered to be a type of circuit. In the case of a processor, the circuit, means, or unit comprises hardware and the hardware. It is a combination of software used to constitute hardware and / or a processor.

[0012] Below is an example of the configuration of a capacitively coupled plasma processing apparatus as an example of plasma processing apparatus 1. Let me explain. Figure 2 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. be.

[0013] The capacitively coupled plasma processing apparatus 1 comprises a chamber 10, a gas supply unit 20, and a power supply system 3. The plasma processing apparatus 1 also includes a substrate support section 11 and a gas Includes the introduction section. The gas introduction section introduces at least one processing gas into the chamber 10. It is configured as follows. The gas inlet section includes the shower head 13. The substrate support section 11 is a chang It is placed inside the base 10. The shower head 13 is placed above the substrate support part 11. In this embodiment, the shower head 13 is located at the top (ceiling) of the chamber 10. It is not necessary, but it constitutes part of the chamber. Chamber 10 includes a shower head 13 and a side wall 1 of the chamber 10. Chamber 1 has a plasma processing space 10s defined by 0a and the substrate support portion 11. 0 is grounded. The shower head 13 and the substrate support part 11 are electrically connected to the housing of the chamber 10. They become electrically isolated.

[0014] The substrate support portion 11 includes the main body portion 111 and the ring assembly 112. The main body portion 111 is , a central region 111a for supporting the substrate W, and for supporting the ring assembly 112 It has an annular region 111b. The wafer is an example of a substrate W. Annular region of the main body 111 111b surrounds the central region 111a of the main body 111 in a plan view. The substrate W is the main body The ring assembly 112 is positioned on the central region 111a of 111, and is located within the main body 111. It is positioned on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a. Therefore, the central region 111a is also called the substrate support surface for supporting the substrate W, and the annular region Region 111b is also called the ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a support base 1110 and an electrostatic chuck 1111. The support base 1110 includes a conductive member. The conductive member of the support base 1110 is the lower electrode. It can function. The electrostatic chuck 1111 is placed on the support base 1110. K1111 consists of a ceramic member 1111a and a static device placed inside the ceramic member 1111a. Includes an electrostatic chuck electrode 1111b. Note that the electrostatic chuck electrode 1111b is an adsorption electrode ( Also called a clamping electrode Electrode 1111b is electrically connected or coupled to the chuck power supply. The chuck power supply is DC. It may be a power supply, or it may be an AC power supply. The ceramic member 1111a is in the central region It has 111a. In one embodiment, the ceramic member 1111a has an annular region 111 It also has b. Furthermore, electrostatic chucks 1111 such as annular electrostatic chucks and annular insulating members Other surrounding members may have annular regions 111b. In this case, the ring assembly 112 They may be placed on an annular electrostatic chuck or an annular insulating member, and the electrostatic chuck 1111 and It may be placed on both sides of the annular insulating member. Also, the RF power supply 31 and / or electric power supply described later. At least one bias electrode electrically connected or coupled to the source 32 is connected to the ceramic member 1 It may be placed within 111a. In this case, at least one bias electrode is connected to the lower electrode. It functions in this way. Also, the conductive member of the support base 1110 and the bi within the ceramic member 1111a The as electrode may function as multiple lower electrodes. In one embodiment, the voltage described later The first voltage generating unit 32a, which functions as a pulse generating unit, is located within the ceramic member 1111a The first RF generation unit 31a, which will be described later, is electrically connected or coupled to the bias electrode and is supported by a support base. It is electrically connected or coupled to the conductive member 1110. Also, the electrostatic chuck electrode 1111 b may function as a lower electrode. Therefore, the substrate support portion 11 has at least one lower Includes electrodes.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, one or The multiple annular members include one or more edge rings and at least one covering ring. The edge ring is formed of a conductive or insulating material, and the covering is made of an insulating material. It is formed.

[0017] Furthermore, the substrate support section 11 includes the electrostatic chuck 1111, the ring assembly 112 and the substrate. This includes a temperature control module configured to adjust at least one of them to a target temperature. However, this is also acceptable. The temperature control module includes a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. It may also contain a waste product. A heat transfer fluid such as brine or gas flows through the channel 1110a. In one embodiment, a flow path 1110a is formed within the support base 1110, and one or more heators are formed. The ta is placed inside the ceramic member 1111a of the electrostatic chuck 1111. Also, substrate support The part 11 is configured to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 111a. It may include a heat transfer gas supply unit.

[0018] The gas supply unit 20 includes at least one gas source 21 and at least one flow controller. 22 may be included. In one embodiment, the gas supply unit 20 has at least one processing gas The gas is supplied from the corresponding gas source 21 to the corresponding flow controller 22. It is configured to supply to the shower head 13. Each flow controller 22 is configured, for example, a mass flow controller. It may include a controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 is At least one flow modulation device modulates or pulses the flow rate of at least one processing gas. Chairs may be included.

[0019] The power supply system 30 includes an RF power supply 31 that is electrically connected to or coupled to the chamber 10. In one embodiment, the RF power supply 31 is connected via at least one impedance matching device. The impedance matcher is electrically connected or coupled to the chamber 10. It may be a matching device or an electronically controlled matching device. The RF power supply 31 has at least 1 Two RF signals (RF power) are transmitted to at least one lower electrode and / or at least one upper electrode. It is configured to supply to the electrodes. This allows a small amount of the plasma to be supplied to the plasma processing space 10s. Plasma is generated from at least one processing gas. Therefore, the RF power supply 31 is used for plasma It can function as at least a part of the generation unit 12. Also, it can generate a bias RF signal at least 1 By supplying to the two lower electrodes, a bias potential is generated on the substrate W, and the formed plasma The ionic components in the substrate can be drawn into the substrate W.

[0020] The RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The RF generation unit 31a has at least one lower electrode and / or at least one upper electrode. Electrically connected or coupled, for generating plasma in the plasma processing space 10s It is configured to generate a source RF signal (source RF power). In one embodiment, The first RF generation unit 31a generates at least one impedance matching device It is electrically connected or coupled to one lower electrode and / or at least one upper electrode. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generation unit 31a generates a plurality of signals having different frequencies. - It may be configured to generate RF signals. One or more source RF signals are generated. The voltage is supplied to at least one lower electrode and / or at least one upper electrode.

[0021] The second RF generation unit 31b is electrically connected or coupled to at least one lower electrode, It is configured to generate a bias RF signal (bias RF power). In one embodiment, The second RF generation unit 31b then generates at least one impedance matching device. Both are electrically connected or coupled to one lower electrode. The first RF generation unit 31a is the lower electrode When electrically connected or coupled to the second RF generation unit 31b, the second RF generation unit 31b electrically connects to the same lower electrode. It may be connected to or coupled to, or electrically connected to or coupled to, other lower electrodes. The frequency of the source RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. It has. In one embodiment, the bias RF signal is in the range of 100kHz to 60MHz. It has a frequency within the range. In one embodiment, the second RF generation unit 31b has different frequencies It may be configured to generate multiple bias RF signals. Several bias RF signals are supplied to at least one lower electrode. Also, various implementations In this state, at least one of the source RF signal and the bias RF signal is pulsed. That's fine.

[0022] Furthermore, the power supply system 30 includes a power supply 32 that is electrically connected to or coupled to the chamber 10. That's fine too. The power supply 32 includes a first voltage generating unit 32a and a second voltage generating unit 32b. In one embodiment, the first voltage generating unit 32a electrically supplies at least one lower electrode It is connected or coupled and configured to generate a first voltage signal. The signal is applied to at least one lower electrode. In one embodiment, a second voltage generation Part 32b is electrically connected or coupled to at least one upper electrode and a second voltage signal It is configured to generate a second voltage signal. The generated second voltage signal is sent to at least one upper electrode. It is applied.

[0023] In various embodiments, the first and / or second voltage signals may be pulsed. In this case, the first voltage generation unit 32a and / or the second voltage generation unit 32b generate the voltage pulse. It functions as a voltage pulse generator configured to generate voltage pulses. The sequence of Russ is imprinted on at least one lower electrode and / or at least one upper electrode. It is added. In one embodiment, the sequence of voltage pulses has multiple cycles, each The cycle includes a burst of voltage pulses in the first period and a constant reference voltage in the second period. This includes, in other words, a sequence of voltage pulses in which bursts of voltage pulses are repeated. The absolute value of the voltage level of a voltage pulse is greater than the absolute value of the voltage level of the reference voltage. The pulse may be any waveform having a rectangular, trapezoidal, triangular, or a combination thereof. The arbitrary waveform may change over time. The voltage pulse may have positive polarity, or negative polarity. It may have properties. Also, the voltage pulse sequence may have one or more positive electrodes within one cycle. The first and second may include a polar voltage pulse and one or more negative voltage pulses. Voltage generation units 32a and 32b may be provided in addition to the RF power supply 31, and the first voltage generation The section 32a may be provided in place of the second RF generation section 31b.

[0024] The exhaust system 40 is connected, for example, to a gas outlet 10e located at the bottom of the chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is adjusted by this. The vacuum pump is a turbo molecular pump. This may include a pump, a dry pump, or a combination thereof.

[0025] <Example of heat transfer component configuration> Figure 3 is a diagram illustrating an example of a heat transfer component. The heat transfer component H is made of adhesive silicone. It comprises a silicone-containing sheet S1. The silicone-containing sheet S1 may be, for example, substantially disc-shaped. The upper surface S1a of the silicon-containing sheet S1 is coated with a carbon-containing film C1.

[0026] The silicone-containing sheet S1 is made of an adhesive material. S1 is, for example, a silicon-containing material, a silicon carbide-containing material, or a nano-silicon carbide-containing material. The silicon-containing sheet S1 may consist of a tungsten-containing material and aluminum oxide. Aluminum-containing materials, aluminum nitride-containing materials, diamond powder-containing materials, carbon dioxide It may also contain tube-containing materials, fluororubber, or acrylic resin, etc. In one embodiment... Furthermore, the silicone-containing sheet S1 is a mesh impregnated with a liquid heat transfer material such as silicone oil. It may also be a sheet. In one embodiment, the silicon-containing sheet S1 has high thermal conductivity and It may be composed of materials that have plasma resistance.

[0027] In one embodiment, the silicon-containing sheet S1 is 1000 μm or less, and 800 μm or less. or having a thickness of 500 μm or less.

[0028] Carbon-containing film C1 is a film that contains carbon as a component. Carbon-containing film C1 is made up of siloxane bonds. It may also contain carbon components that have carbon-carbon bonds with lower bond energy. Film-forming C1 is composed of layered structures like graphite, or weak intermolecular forces such as amorphous carbon atoms. It may also contain carbon components. The carbon-containing film C1 may be, for example, graphite, amorphous carbon, or The film may contain a mixture of these. The carbon-containing film C1 can be, for example, produced by physical vapor deposition (PV). D) Coat the upper surface of the silicon-containing sheet S1a by chemical vapor deposition (CVD) or the like. It is permissible.

[0029] In one embodiment, the carbon-containing film C1 has a wavelength of 10 nm or more, 30 nm or more, or 50 nm. It has a thickness of 200 nm or less, or 1 It has a thickness of 00 nm or less.

[0030] Figure 4 shows another example of the configuration of the heat transfer member H. As shown in Figure 4, the heat transfer member H is A carbon-containing film may be coated on both sides of the silicon-containing sheet S1. The upper surface S1a of the carbon-containing sheet S1 is coated with a first carbon-containing film C1. The lower surface S1b of the silicon-containing sheet S1 is coated with a second carbon-containing film C2. The composition (structure, material, thickness, etc.) of the first carbon-containing film C1 and the second carbon-containing film C2 is as follows: The configuration of the carbon-containing film C1 may be the same as that shown in Figure 3. The first carbon-containing film C1 and the second The composition of the carbon-containing film C2 may be the same or different from each other.

[0031] Figure 5 shows another example of the configuration of the heat transfer member H. As shown in Figure 5, the heat transfer member H is A carbon-containing film may be coated on both sides and sides of the silicon-containing sheet S1. Furthermore, the upper surface S1a of the silicon-containing sheet S1 is coated with a first carbon-containing film C1. The lower surface S1b of the silicon-containing sheet S1 is coated with a second carbon-containing film C2. A third carbon-containing film C3 is applied to one side surface S1c of the silicon-containing sheet S1. It is coated. The other side S1d of the silicon-containing sheet S1 has a fourth carbon A carbon-containing film C4 is coated. A third carbon-containing film C3 and a fourth carbon-containing film C The configuration of 4 (structure, material, thickness, etc.) may be the same as that of the carbon-containing film C1 shown in Figure 3. i. The first carbon-containing film C1, the second carbon-containing film C2, the third carbon-containing film C3 and the fourth carbon The composition of the element-containing film C4 may be the same or different from each other.

[0032] <Examples of applications for heat transfer components> In one embodiment, the heat transfer member H may be used in a substrate processing apparatus. For example, The silicon-containing sheet S1 may be placed on the substrate support portion of the substrate processing apparatus. In this case, The upper surface S1a of the silicon-containing sheet S1 can constitute a support surface for supporting the substrate. The silicon-containing sheet S1 functions as a heat transfer member for heat exchange between the substrate support and the substrate. It is possible. Also, for example, the silicon-containing sheet S1 is a consumable part used in a substrate processing apparatus. It is positioned between the support member of the consumable part (for example, a ring assembly or shower head) and the consumable part itself. It may be done. In this case, the upper surface S1a of the silicone-containing sheet S1 supports the consumable parts. It can form a support surface for the consumable part. The silicone-containing sheet S1 also supports the consumable part. It can function as a heat transfer member for heat exchange between the supporting member and the other member.

[0033] Figure 6 is a diagram illustrating an example of the application of the heat transfer member H. Figure 6 shows that the heat transfer member H is made of plastic. This is an example of placement on the substrate support portion 11 of the Zuma processing device 1 (see Figure 2). The heat transfer member H is It may be provided on the substrate support surface 111a of the substrate support portion 11. And on the heat transfer member H A plate W may be provided. That is, a heat transfer member H is provided between the substrate support 11 and the substrate W. This is acceptable. The shape of the heat transfer element H in plan view may be circular, similar to the substrate W.

[0034] As shown in Figure 6, the lower surface S1b of the silicon-containing sheet S1 is the substrate support of the substrate support portion 11. It contacts the upper surface of the holding surface 111a. The adhesive silicone-containing sheet S1 is the substrate support part The silicon-containing sheet S1 is in close contact with 11, thereby promoting heat exchange between the two. The carbon-containing film C1 formed on the upper surface S1a is in contact with the lower surface of the substrate W. The substrate W is a heat transfer member. The substrate support portion 11 is thermally connected via H.

[0035] During plasma treatment of the substrate W, the heat input from the plasma in the chamber 10 heats the substrate W. The temperature of the heat transfer member H can rise through this. At this time, between the substrate W and the silicon-containing sheet S1 If a carbon-containing film C1 is not present at the interface, at the interface between the substrate W and the silicon-containing sheet S1... In some cases, a siloxane bond is formed, and the two materials become strongly bonded together. When transporting the substrate W after plasma processing, a large size is used to separate the substrate W from the heat transfer member H. A considerable force is required. Also, the substrate W and heat transfer member H may be damaged during separation. In contrast, In this embodiment, a carbon-containing film C1 is present at the interface between the silicon-containing sheet S1 and the substrate W. It exists. This causes siloxane bonds to form between the substrate W and the silicon-containing sheet S1. And can be suppressed. And the bonding force between the substrate W and the carbon-containing film C1, and the carbon-containing film C1 The carbon-carbon bond strength within the substrate tends to be weaker than that of the siloxane bond. W can be separated from the heat transfer member H with relatively little force. In one embodiment, the substrate W and the heat transfer part The separation from material H occurs when a portion (e.g., the upper part) of the carbon-containing film C1 bonded to the substrate W is separated from the heat transfer member H. This includes peeling the bonded carbon-containing film C1 from other parts (e.g., the bottom) of the bonded film.

[0036] Figures 7A and 7B illustrate other application examples of the heat transfer member H. Figure 7B shows that the heat transfer member H is in contact with the ring support surface 111b of the plasma processing apparatus 1 (see Figure 2), This is an example of placement between ring 112 and the other ring. In one embodiment, as shown in Figure 7A, The heat transfer member H and the ring 112 may be in contact via a carbon-containing film C1. In this case, the ring 112 and the heat transfer member H can be separated with a relatively small force. The ng 112 may be transported to the outside of the chamber 10 by a transport device. Replacement Ring 112 may be stored separately outside the chamber 10. Replacement ring 1 12 is transported by a transport device into the chamber 10 by itself and placed on the heat transfer member H. It may be done. In one embodiment, as shown in Figure 7B, the heat transfer member H and the ring support surface 111 b may be in contact via a carbon-containing film C1. In this case, the heat transfer member H and the ring support surface 1 11b can be separated with a relatively small force. That is, in the example shown in Figure 7B, the heat transfer member H The ring 112 can be separated from the ring support surface 111b as a single unit. The heat transfer member H and ring 112, separated from 111b, are transported together as a single unit by the transport device. The replacement heat transfer members H and ring 112 may be transported outside the chamber 10. The replacement heat transfer members H and ring 112 may be stored together outside of 10. The components are then transported together into the chamber 10 by the transport device and placed on the ring support surface 111b. It may be placed there. In plan view, the shape of the heat transfer member H may be annular, similar to the ring 112. The heat transfer member H is positioned such that, in a plan view, its center coincides with that of the electrostatic chuck 1111. Good. Ring 112 is an example of a consumable part in this disclosure. Ring 112 is, for example It may be one or more edge rings. The edge rings may be made of a conductive or insulating material. The ring 112 may be, for example, one or more covering rings. The ring is positioned radially outward of the edge ring. The covering ring is formed of insulating material. The ring 112 is composed of, for example, both an edge ring and a covering ring. This may be done. In one embodiment, as shown in Figures 7A and 7B, the electrostatic chuck 1111 is The electrostatic chuck electrode 1111c may be provided. The electrostatic chuck electrode 1111c is a ring support It is located below the holding surface 111b and within the ceramic member 1111a. Electrode 1111c It is configured to attract and hold the ring 112. The electrostatic chuck electrode 1111c is The chuck may be electrically connected or coupled to the chuck power supply. In one embodiment, the electrostatic chuck The electrode 1111c may be configured as an integral part of the substrate W electrostatic chuck electrode 1111b. In this embodiment, the electrostatic chuck 1111 does not have an electrostatic chuck electrode 1111c. good.

[0037] Figure 8 is a diagram illustrating another application example of the heat transfer member H. Figure 8 shows the heat transfer member as... The cooling plate 61 and shower plate 60 of the rasma processing device 1 (see Figure 2) This is an example of placement in between. As shown in Figure 8, the cooling plate 61 has a flow path 70. It is formed. The flow path 70 is supplied with heat transfer fluid via the pipe 71, via the pipe 71 The heat transfer fluid is discharged. The shower plate 60 and the cooling plate 61 are connected to member 51 It may be attached to the chamber 10 via a heat transfer member H having the same diameter as the gas inlet 13c. It may have multiple holes.

[0038] <An example of a substrate processing method> Next, a substrate processing method according to an exemplary embodiment of the present disclosure (hereinafter also referred to as "Method MT1"). This section will explain the process. The processing in each step is performed using the plasma processing apparatus shown in Figures 1 and 2. It may be done. Below, the control unit 2 is a capacitively coupled plasma processing apparatus 1 (see Figure 2) This explanation will use the example of controlling and executing method MT1.

[0039] Figure 9 is a flowchart of an example of Method MT1. Figure 10 shows each step of Method MT1. This is a schematic diagram to explain the process. As shown in Figure 9, method MT1 involves a silicon-containing sheet Step ST1 provides the material, Step ST2 forms a carbon-containing film, and Step S provides the substrate. T3 and, in one embodiment, method MT1 includes a plasma treatment step ST4, The process may further include a step ST5 for unloading the substrate. Hereinafter, using Figures 9 and 10, we will describe method M. Let's explain T1 in detail.

[0040] In step ST1, a silicon-containing sheet S1 is provided. The substrate is provided onto the substrate support surface 111a in the chamber 10, either using a transport device or manually. (See Figures 10(a) to (b)). The adhesive silicone-containing sheet is attached to the substrate support surface 1. It is in close contact with 11a.

[0041] In step ST2, a carbon-containing film C1 is formed on the upper surface of the silicon-containing sheet S1. Specifically, for example, a carbon-containing gas is supplied to the plasma processing space 10s. Source RF A signal is supplied from the RF power supply 31 to the upper or lower electrode. At this time, the bias signal is lower It may be supplied to the electrodes. Plasma is generated from a carbon-containing gas, and the carbon in the plasma A carbon-containing film C1 is deposited on the surface of the silicon-containing sheet S1, and a carbon-containing film C1 is formed on the upper surface (Figure 10). (See (c)). This forms the heat transfer member H on the substrate support portion 11.

[0042] In step ST3, the substrate W is supplied to the chamber 10. The substrate W is transported by a transport arm. It is brought into the chamber 10 and placed on the upper surface of the heat transfer member H (Figures 10(d) to (e)). (See reference). At this time, the carbon-containing film C1 formed on the upper surface S1a of the silicon-containing sheet S1 is It contacts the lower surface of the substrate W. The substrate W is thermally connected to the substrate support 11 via the heat transfer member H. It will be done.

[0043] In step ST4, plasma treatment is performed. Plasma treatment is, for example, etching. This includes a processing step. The processing gas is supplied by the gas supply unit 20 through the shower head 13 to form plasma. It is supplied to the processing space 10s. The processing gas supplied at this time is for etching the substrate W, for example. It contains a gas that generates the active species necessary for processing. The source RF signal is from the RF power supply 31. It is supplied to the upper or lower electrode. At this time, a bias signal may be supplied to the lower electrode. Plasma is generated from the processing gas, and plasma processing (e.g., etching) is performed on the substrate W. In process ST4, the substrate W receives heat from the plasma, which is transmitted through the substrate W. The temperature of the thermal component H may rise. A carbon-containing film is present at the interface between the silicon-containing sheet S1 and the substrate W. C1 is present. This creates a siloxane bond between the substrate W and the silicon-containing sheet S1. The formation and subsequent strong bonding between the two can be suppressed.

[0044] In process ST5, the substrate W is unloaded. By lifting the substrate W, the substrate W and The heat transfer member H is separated (see Figure 10(f)). As described above, the silicon-containing sheet The carbon-containing film C1 present at the interface between S1 and the substrate W is easily separated by peeling or other means. The substrate W is transported to the outside of the chamber 10 by the transport arm (Figure 10(g)). (See reference). This completes method MT1.

[0045] In one embodiment, in step ST1, a silicon-containing sheet S1 is provided. Instead, the heat transfer component H (a silicon-containing sheet S1 coated with a carbon-containing film C1) It may be provided. In this case, step ST2 may be omitted.

[0046] In one embodiment, after the completion of process ST5, the heat transfer member H is removed from inside the chamber 10. This is acceptable. In this case, method MT1 may be performed on the new substrate W starting from process ST1. In one embodiment, after the completion of method MT1, the heat transfer member H is removed from inside the chamber 10. It is not necessary. And, for other substrates W, is method MT1 process ST3 (substrate provision) It may be carried out from step ST2 (formation of carbon-containing film). The heat transfer member H is used in succession for plasma treatment of one or more other substrates W. stomach.

[0047] In one embodiment, the plasma treatment in step ST4 involves the silicon-containing sheet S1 and the substrate support The process may be carried out with a carbon-containing film present between the holding surface 111a and the substrate W. Due to the heat input from Zuma, the silicone-containing sheet S1 denatures and its adhesiveness increases, and the silicone-containing This can prevent the interface between sheet S1 and substrate support surface 111a from becoming too firmly bonded. Furthermore, a method is to provide a carbon-containing film between the silicon-containing sheet S1 and the substrate support surface 111a. For example, the following method may be used. For example, before process ST1, the substrate support A carbon-containing film may be formed on the holding portion 11. For example, in step ST1, a carbon film may be formed on the lower surface. A silicon-containing sheet S1 coated with a silicon-containing film is provided on the substrate support surface 111a. It may also be used.

[0048] <Other examples of heat transfer components> Figure 11 shows another example of the configuration of the heat transfer member. As shown in Figure 11, the heat transfer member H1 This consists of a base T, a first silicon-containing sheet S1, and a second silicon-containing sheet S2 The device may also include a first silicone-containing sheet S1 and a third silicone-containing sheet S3. The second silicone-containing sheet S2 is defined as the "silicone-containing sheet" and the second silicone-containing sheet S2 in this disclosure. This is an example of "other silicone-containing sheets."

[0049] The base T has a roughly circular shape. The base T may have a concave cross-section. The base T has a central part The disc portion T1 may have a thin disc portion and an annular portion T2 with a thicker outer circumference. The diameter r1 of 1 is formed to be slightly larger than the diameter r3 of the substrate W, and a silicon-containing sheet is formed inside. It can accommodate the base S1 and the substrate W. The base T can be made of, for example, Si, SiC, SiN, C, S iO2, Quartz, Al2O3, Y2O3, YAlO3(YAP), YOF, W, Ti, TiN It may be composed of materials such as ZeO2 and green sheets. The base T is made of a conductive material. It may be made of insulating material. The disc portion T1 and the annular portion T2 are made of the same material. It may be composed of one material, or it may be composed of different materials.

[0050] The material and thickness of the first silicone-containing sheet S1 are as shown in Figure 3. The same as in 1. A first carbon-containing film C is placed on the upper surface of the first silicon-containing sheet S1. 1 is coated. The composition (structure, material, thickness, etc.) of the first carbon-containing film C1 is: The configuration of the carbon-containing film C1 shown in Figure 3 may be the same as that of the first silicon-containing sheet S1. A substrate W is placed on the upper surface (first carbon-containing film C1). That is, the first silicon The upper surface of the containing sheet S1 constitutes a substrate support surface for placing the substrate W. The lower surface of the silicon-containing sheet S1 is in contact with the upper surface of the disc portion T1 of the base T. Sheet S1 is adhesive and adheres tightly to the base T.

[0051] The material and thickness of the second silicone-containing sheet S2 are as shown in Figure 3. It may be the same as in 1. The diameter of the second silicone-containing sheet S2 is the same as the diameter of the first silicone-containing sheet The diameter of the second silicone-containing sheet S2 may be larger than that of S1. The material and thickness of the second silicone-containing sheet S2 are as follows: The second silicone-containing sheet may be the same as or different from the first silicone-containing sheet S1. The lower surface of S2 is coated with a second carbon-containing film C2. The configuration of 2 (structure, material, thickness, etc.) is the same as that of the carbon-containing film C1 shown in Figure 3. Often, or they may be different. The upper surface of the second silicon-containing sheet S2 is the lower surface of the base T. It comes into contact with the base T. The second silicone-containing sheet S2 is adhesive and adheres tightly to the base T. It can be done.

[0052] A third silicone sheet may be placed on the annular portion T2 of the base T. The shape of the sheet S3 in plan view may be annular, similar to the ring 112. The material and thickness of the ion-containing sheet S3 are the same as those of the silicone-containing sheet S1 shown in Figure 3. Yes, that's fine. On the upper surface S3a of the third silicon-containing sheet S3, there is a fifth carbon-containing film C5. It is coated. The composition (structure, material, thickness, etc.) of the fifth carbon-containing film C5 is shown in Figure 3. The structure of the carbon-containing film C1 shown may be the same as or different from the third sil The fifth carbon-containing film C5 formed on the upper surface S3a of the carbon-containing sheet S3 is the ring 112 It can come into contact with the lower surface. The lower surface of the third silicon-containing sheet S3 is on the upper surface of the base T. The third silicone-containing sheet S3 is adhesive and adheres tightly to the base T. ru.

[0053] As shown in Figure 11, the heat transfer member H1 is in a state where the substrate W and ring 112 are housed and placed on it. It can be transported by [method]. And the heat transfer member H1 is, for example, in the plasma processing apparatus 1 (see Figure 2). It may be placed on the substrate support portion 11. The first carbon-containing film C1 is placed inside the chamber 10 During the rasma process, the substrate W and the first silicon-containing sheet S1 become firmly bonded. This can suppress the process and facilitate the separation of the two. The second carbon-containing film C2 is located inside the chamber 10. In the plasma treatment, the substrate support portion 11 and the second silicon-containing sheet S2 are firmly bonded together. This can suppress the bonding and facilitate the separation of the two. The fifth carbon-containing film C5 is a cha In the plasma treatment inside the 10, the ring 112 and the third silicon-containing sheet S3 This can suppress the strong bonding between the two and facilitate their separation.

[0054] Next, a substrate processing method using the heat transfer member H1 shown in Figure 11 (hereinafter also referred to as "Method MT2") .) will be explained. Figure 12 is a flowchart of an example of method MT2. Figure 1 Figure 3 is a schematic diagram illustrating each step of method MT2. As shown in Figure 12, method M T2 comprises the steps STa1 of providing a heat transfer member and STa2 of providing a substrate and a ring. , including. In one embodiment, method MT2 includes a step STa3 of performing plasma treatment and The process may further include STa4 for unloading the boards and STa5 for unloading the heat transfer components. The processing in this section may be carried out using the plasma processing apparatus shown in Figures 1 and 2. The following describes the control Unit 2 controls each part of the capacitively coupled plasma processing apparatus 1 (see Figure 2) to implement method MT2. Let's explain using the case where you perform the action as an example.

[0055] In process STa1, a heat transfer member H1 is provided. The heat transfer member H1 is provided using a conveying device. The substrate is provided on the substrate support surface 111a within the chamber 10 by hand or manually (from Figure 13(a)). (see (c)).

[0056] In step STa2, the substrate W and the ring 112 are provided to the chamber 10. The ring 112 and the other ring 112 are each transported into the chamber 10 by the transport arm, and the heat transfer member H1 It is placed on the upper surface (see Figure 13(d) to (e)). At this time, the silicone-containing sheet The carbon-containing film C1 formed on the upper surface of S1 is in contact with the lower surface of the substrate W. The substrate W is the heat transfer section. The substrate support portion 11 is thermally connected via material H1. The formed carbon-containing film C5 contacts the lower surface of the ring 112. The ring 112 is a heat transfer section. The substrate support portion 11 is thermally connected via material H1.

[0057] In process STa3, plasma treatment is performed (see Figure 13(e)). The processing may be the same as that performed in method MT1.

[0058] In process STa4, the substrate W is unloaded. By lifting the substrate W, the substrate W The heat transfer element H1 is separated (see Figure 13(f)). As described above, silicon-containing silicon The carbon-containing film C1 present at the interface between the substrate S1 and the substrate W peels off, making separation easy. This can be done. The substrate W is transported to the outside of the chamber 10 by a transport arm.

[0059] In process STa5, the heat transfer member H1 and the ring 112 are discharged. By lifting it, the heat transfer member H1 and the substrate support part 11 are separated (see (g) in Figure 13). (Illuminated). The carbon-containing film C2 present at the interface between the silicon-containing sheet S2 and the substrate support part 11 peels off. By separating them, separation can be easily performed. The heat transfer member H1 is transferred by the conveying arm into the chamber It is transported to the outside of 10 (see (g) in Figure 13). This completes method MT2.

[0060] In one embodiment, the upper surface of the heat transfer member H1 is placed outside the chamber 10 in advance. A substrate W may be placed. That is, in step STa1, the heat transfer member H1 and the substrate W may be provided as a single unit within the chamber 10.

[0061] In one embodiment, the upper surface of the heat transfer member H1 outside the chamber 10 is prepared in advance. A ring 112 may be placed. That is, in step STa1, the heat transfer member H1 and The ring 112 may be provided as an integral part within the chamber 10. At this time, further transmission A substrate W may be placed on the upper surface of the thermal member H1. That is, in step STa1, The heat transfer member H1, the substrate W, and the ring 112 are provided as an integral unit within the chamber 10. That's fine.

[0062] In one embodiment, the substrate support surface 111a is pre-coated with a carbon-containing film. It may be done. In this case, the lower surface of the second silicon-containing sheet S2 has a carbon-containing film. Coating is not required. In step STa1, a carbon-containing film is coated. The lower surface of the silicon-containing sheet S2 is in contact with the substrate support surface 111a, so as to be the heat transfer member. H1 may be provided. As a method for coating the substrate support surface 111a with a carbon-containing film This may be the same as the method performed in step ST2 of method MT1.

[0063] In one embodiment, in step STa1, a carbon-containing film C1 is coated. A heat transfer member H1 may not be provided. And in the chamber 10, the first A carbon-containing film may be coated on the upper surface of the silicon-containing sheet.

[0064] In one embodiment, in step STa4, in addition to the substrate W, the ring 112 is unloaded. This is also acceptable. In this case, by lifting the ring 112, the ring 112 and the heat transfer member can be moved. H1 is separated. At this time, it is present at the interface between the silicon-containing sheet S3 and the ring 112. The carbon-containing film C5 can be easily separated by peeling or other means.

[0065] In one embodiment, step STa4 is not performed, and in step STa5, the heat transfer member H1 The substrate W and ring 112 may be transported together.

[0066] In one embodiment, after the completion of step STa4, step STa5 is not performed, and another substrate W is placed on it. In contrast, method MT2 may be performed from process STa2 (providing the substrate). That is, The ring 112 and the heat transfer member H1 are used continuously for plasma processing of one or more other substrates W. You are welcome.

[0067] <Exam> Next, we will describe the tests conducted to evaluate the adhesiveness and heat transfer properties of the heat transfer component H. This disclosure is not limited in any way by the following tests.

[0068] (Tack force test) First, we prepared two types of adhesive silicone-containing sheets with different thermal resistance values ​​(Sample 1, Sample 2). The tack force of each of these samples (Sample 1, Sample 2) was measured. Physically, the samples (Sample 1 / Sample 2) were fixed to the top of an alumina stand. A silicon tip (5mm square) is attached to the probe of the test device, and the sample is placed approximately at the center. Then, under conditions of 150°C, it was pressed for 10 seconds. The probe pressed against the sample was then moved 1m The force required to separate the objects at a constant speed of m / s was measured.

[0069] Next, the tack force was measured similarly after coating each sample with a carbon-containing film. The sample (sample) is placed so that the carbon-containing film coated surface is in contact with the alumina stand. Sample 1 (Sample 2) was fixed to the base. A silicon tip (5mm square) was attached to the probe of the testing machine. The material was bonded and pressed against the approximate center of the sample for 10 seconds under conditions of 150°C. The force required to pull away a probe pressed against a sample at a constant speed of 1 mm / second is measured. It was decided.

[0070] Figure 14 shows the results of the tack force test. As shown in Figure 14, sample 1 is carbon When coated with a carbon-containing film, the tack force was reduced by 85%. Sample 2 was carbon-containing When a film coating was present, the tack force was reduced by 88%. If there is no adhesive, the tackiness of the silicone-containing sheet increases due to the heat of 150°C, and the alumina It is thought that the tack force is increased because it is fixed to the base. On the other hand, the carbon-containing film coating If a sample is present, the carbon-containing film present at the interface between the alumina base and the sample will cause the silicon to... It is believed that the adhesion of the carbon-containing sheet to the alumina base was suppressed. It is thought that the peeling of the containing film reduced the force pulling it away from the alumina base. ru.

[0071] (Thermal resistance test) For Sample 1 and Sample 2 mentioned above, the load was 12 kg·m / sec. 2 , temperature:20 Thermal resistance was measured under conditions of ℃ to 120℃. Each sample was coated with a carbon-containing film. The thermal resistance was measured similarly after the procedure was performed for 30 seconds. In addition, a carbon-containing film was applied to each sample for 60 seconds. The thermal resistance value was measured similarly with the coating applied.

[0072] Figure 15 shows the results of the thermal resistance test. As shown in Figure 15, each sample And, those coated with a carbon-containing film for 30 seconds, and those coated for 60 seconds. Compared to those without a carbon-containing coating, the thermal resistance value hardly changes. In other words, by coating a silicon-containing sheet with a carbon-containing film, heat There was no decrease in conductivity.

[0073] Embodiments of this disclosure further include the following embodiments:

[0074] (Note 1) Chamber and, A substrate support portion is arranged within the chamber, A heat transfer member disposed on the substrate support portion, wherein the heat transfer member is made of adhesive silicone The silicon-containing sheet is provided, and the upper surface of the silicon-containing sheet is coated with a carbon-containing film. There are heat transfer components, A substrate processing apparatus comprising:

[0075] (Note 2) The substrate processing apparatus according to Appendix 1, wherein the thickness of the carbon-containing film is 200 nm or less.

[0076] (Note 3) The heat transfer member is positioned such that the lower surface of the silicon-containing sheet abuts against the substrate support portion. A substrate processing apparatus as described in Appendix 1 or Appendix 2, which is arranged on the substrate support portion.

[0077] (Note 4) The lower surface of the silicon-containing sheet is coated with a carbon-containing film, as per Appendix 3. The substrate processing apparatus described above.

[0078] (Note 5) The thickness of the carbon-containing film on the lower surface of the silicon-containing sheet is 200 nm or less. The substrate processing apparatus described in 4.

[0079] (Note 6) The heat transfer member is A base placed on the lower surface of the aforementioned silicon-containing sheet, The base further comprises an adhesive silicone-containing sheet placed on the lower surface of the base, The heat transfer member is configured such that the lower surface of the other silicon-containing sheet abuts against the substrate support portion. A substrate processing apparatus according to Appendix 1 or Appendix 2, wherein the substrate is placed on the substrate support portion.

[0080] (Note 7) The lower surface of the aforementioned other silicon-containing sheet is coated with a carbon-containing film. The substrate processing apparatus described in 6.

[0081] (Note 8) The thickness of the carbon-containing film on the lower surface of the aforementioned other silicon-containing sheet is 200 nm or less. The substrate processing apparatus described in Appendix 7.

[0082] (Note 9) The RF power supply is further provided, and the RF power supply provides a source R for plasma generation in the substrate support portion. The substrate processing described in any one of the appendices 1 to 8, configured to supply an F signal. Device.

[0083] (Note 10) The substrate support portion is configured to adjust the temperature of the substrate support portion, and includes a temperature control module. A substrate processing apparatus as described in Appendix 9, further comprising the features described in Appendix 9.

[0084] (Note 11) A heat transfer member for a substrate processing apparatus, wherein the heat transfer member is an adhesive silicon-containing sheet The silicon-containing sheet is provided with a carbon-containing film having a thickness of 200 nm or less on its upper surface. A heat transfer component.

[0085] (Note 12) The lower surface of the silicon-containing sheet is coated with a carbon-containing film with a thickness of 200 nm or less. The heat transfer component described in Appendix 11.

[0086] (Note 13) A base placed on the lower surface of the aforementioned silicon-containing sheet, The system further comprises an adhesive silicone-containing sheet placed on the lower surface of the base, The heat transfer member described in Appendix 11 or Appendix 12.

[0087] (Note 14) The lower surface of the aforementioned other silicon-containing sheet is coated with a carbon-containing film with a thickness of 200 nm or less. The heat transfer component described in Appendix 13.

[0088] (Note 15) The upper surface of the silicon-containing sheet is a substrate or substrate provided to the substrate processing apparatus. The support surfaces for supporting consumable parts within the plate processing apparatus are described in appendices 11 to 14. Heat transfer component.

[0089] (Note 16) A substrate processing method in a substrate processing apparatus, wherein the substrate processing apparatus comprises a chamber and the chip The method comprises a substrate support portion arranged within the canvas, (a) A step of providing a heat transfer member on the substrate support portion in the chamber, The heat transfer component includes an adhesive silicone-containing sheet, and the process involves... (b) A step of coating the upper surface of the silicon-containing sheet with a carbon-containing film, (c) The step of providing a substrate on the heat transfer member, Substrate processing method

[0090] (Note 17) The thickness of the carbon-containing film to be coated in (b) above is 200 nm or less. The substrate processing method described in item 16.

[0091] (Note 18) Prior to (a) above, (d) a step of coating the substrate support portion with a carbon-containing film. Furthermore, the substrate processing method described in Appendix 16 or Appendix 17.

[0092] (Note 19) The thickness of the carbon-containing film coated in (d) above is 200 nm or less. The substrate processing method described in Appendix 18.

[0093] Each of the embodiments described above is for illustrative purposes only and is not intended to limit the scope of this disclosure. These are not illustrations. Each of the above embodiments is described without departing from the scope and spirit of this disclosure. Various modifications are possible. For example, some components in one embodiment may be modified in another embodiment. It can be added to. Also, some components in one embodiment can be added to other embodiments. It can be replaced with the corresponding component. [Explanation of Symbols]

[0094] 1 Plasma processing apparatus, 10 Chamber, 11 Substrate support section, RF31 Power supply, 111a Substrate support surface, C1 carbon-containing film, C2 carbon-containing film, H heat transfer element, S1 silicon-containing Sheet with silicone, S1a Top surface of silicone-containing sheet S1, S1b Silicone-containing sheet S1 Bottom surface, S2 other silicon-containing sheet, T base, Ta top surface of base, Tb bottom surface of base W board

Claims

1. Chamber and, A substrate support portion is arranged within the chamber, A heat transfer member disposed on the substrate support portion, wherein the heat transfer member is made of adhesive silicone The silicon-containing sheet is provided, and the upper surface of the silicon-containing sheet is coated with a carbon-containing film. There are heat transfer components, A substrate processing apparatus comprising:

2. The substrate processing apparatus according to claim 1, wherein the thickness of the carbon-containing film is 200 nm or less.

3. The heat transfer member is positioned such that the lower surface of the silicon-containing sheet abuts against the substrate support portion. A substrate processing apparatus according to claim 1, which is arranged on a substrate support portion.

4. Claim 3, wherein the lower surface of the silicon-containing sheet is coated with a carbon-containing film. The substrate processing apparatus described above.

5. The claim states that the thickness of the carbon-containing film on the lower surface of the silicon-containing sheet is 200 nm or less. The substrate processing apparatus described in item 4.

6. The heat transfer member is A base placed on the lower surface of the aforementioned silicon-containing sheet, The base further comprises an adhesive silicone-containing sheet placed on the lower surface of the base, The heat transfer member is configured such that the lower surface of the other silicon-containing sheet abuts against the substrate support portion. The substrate processing apparatus according to claim 1, wherein the substrate is arranged on the substrate support portion.

7. The lower surface of the aforementioned other silicon-containing sheet is coated with a carbon-containing film, claim The substrate processing apparatus described in item 6.

8. The thickness of the carbon-containing film on the lower surface of the other silicon-containing sheet is 200 nm or less. The substrate processing apparatus according to claim 7.

9. The RF power supply is further provided, and the RF power supply has a source R for plasma generation in the substrate support portion. A substrate according to any one of claims 1 to 8, configured to supply an F signal. Processing device.

10. The substrate support portion is configured to adjust the temperature of the substrate support portion, and includes a temperature control module. The substrate processing apparatus according to claim 9, further comprising:

11. A heat transfer member for a substrate processing apparatus, wherein the heat transfer member is an adhesive silicon-containing sheet The silicon-containing sheet is provided with a carbon-containing film having a thickness of 200 nm or less on its upper surface. A heat transfer component.

12. The lower surface of the silicon-containing sheet is coated with a carbon-containing film with a thickness of 200 nm or less. The heat transfer member according to claim 11.

13. A base placed on the lower surface of the aforementioned silicon-containing sheet, The system further comprises an adhesive silicone-containing sheet placed on the lower surface of the base, The heat transfer member according to claim 11.

14. The lower surface of the aforementioned other silicon-containing sheet is coated with a carbon-containing film with a thickness of 200 nm or less. The heat transfer member according to claim 13.

15. The upper surface of the silicon-containing sheet is a substrate or substrate provided to the substrate processing apparatus. The heat transfer unit according to claim 11, which constitutes a support surface for supporting consumable parts within a plate processing apparatus. Material.

16. A substrate processing method in a substrate processing apparatus, wherein the substrate processing apparatus comprises a chamber and the chip The method comprises a substrate support portion arranged within the canvas, (a) A step of providing a heat transfer member on the substrate support portion in the chamber, The heat transfer component includes an adhesive silicone-containing sheet, and the process involves... (b) A step of coating the upper surface of the silicon-containing sheet with a carbon-containing film, (c) The step of providing a substrate on the heat transfer member, Substrate processing method.

17. In (b) above, the thickness of the carbon-containing film to be coated is 200 nm or less. The substrate processing method described in item 16.

18. Prior to (a) above, (d) a step of coating the substrate support portion with a carbon-containing film. The substrate processing method according to claim 16 is further included.

19. The thickness of the carbon-containing film coated in (d) above is 200 nm or less. The substrate processing method according to claim 18.

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