Chip manufacturing method

Abstract

To provide a method for manufacturing chips that can divide the metal layer. [Solution] The chip manufacturing method comprises: a wafer unit fixing step 301 for fixing a sheet of a wafer unit including a wafer having a metal layer on its back surface and a sheet attached to the back surface of the wafer, with a division starting point formed along the division line; a clamping step 302 for clamping a first region adjacent to the first division line, which is the division line to be divided on the wafer unit, from the front and back sides of the wafer unit with clamping members; a first division step 303 for pressing a second region adjacent to the first division line on the opposite side of the clamping members, along the division line, with a pressing bar from the front side of the wafer; and a second division step 304 for pressing a position in the second region closer to the division line than the position pressed in the first division step 303, along the division line, with a pressing bar from the front side.

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a chip.

Background Art

[0002] Wafers with a metal layer formed thereon are known. A breaking device is used to divide such a wafer along a division starting point such as a groove or a modified layer (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The breaking device shown in Patent Document 1 may fail to divide the metal layer or generate burrs.

[0005] Therefore, it is required to stably divide the metal layer without degrading the quality.

[0006] An object of the present invention is to provide a method for manufacturing a chip capable of dividing a metal layer.

Means for Solving the Problems

[0007] To solve the above-mentioned problems and achieve the objective, the present invention provides a method for manufacturing a chip by dividing a wafer, which has a ductile material layer made of a ductile material on its back surface and has a division starting point formed along a division starting line that demarcates a chip region in which a chip is formed, along the division starting line, the wafer unit comprising the wafer and a sheet attached to the back surface of the wafer, a wafer unit fixing step of fixing the sheet, and a first division starting point adjacent to the first division starting line which is the division starting line of the wafer to be divided, of the wafer unit fixed in the wafer unit fixing step The method is characterized by comprising: a clamping step of clamping a region with a clamping portion from the front and back sides of the wafer unit; a first division step of pressing a second region adjacent to the first division line, on the opposite side of the clamping portion across the first division line, with a pressing member from the front side of the wafer along the division line, after performing the clamping step; and a second division step of pressing a position in the second region closer to the division line than the position pressed in the first division step, with the pressing member from the front side along the division line, after performing the first division step, thereby dividing the wafer along the division line.

[0008] In the chip manufacturing method described above, the distance between the position on the wafer pressed by the pressing member and the first planned division line in the second division step may be half or less of the distance between the position on the wafer pressed by the pressing member and the first planned division line in the first division step.

[0009] In the chip manufacturing method described above, the distance between the position on the wafer pressed by the pressing member and the first planned division line in the second division step may be 0.56 mm or less.

[0010] In the chip manufacturing method described above, the pressing distance in the thickness direction of the wafer when the wafer is pressed by the pressing member in the second division step may be greater than the pressing distance in the thickness direction of the wafer when the wafer is pressed by the pressing member in the first division step.

[0011] In the chip manufacturing method described above, in the first splitting step, a bending stress may be applied to the wafer, and in the second splitting step, a shear stress may be applied to the ductile material layer of the wafer. [Effects of the Invention]

[0012] This invention has the effect of being able to divide metal layers. [Brief explanation of the drawing]

[0013] [Figure 1] Figure 1 is a schematic perspective view showing a wafer unit comprising a wafer to be divided in the chip manufacturing method according to Embodiment 1. [Figure 2] Figure 2 is a schematic perspective view showing an example of the configuration of a braking device for implementing the chip manufacturing method according to Embodiment 1. [Figure 3] Figure 3 is a schematic side view showing a partial cross-section of the braking device configuration shown in Figure 2. [Figure 4] Figure 4 is a schematic perspective view showing the configuration of the lower clamping unit of the clamping unit of the braking device shown in Figure 2. [Figure 5] Figure 5 is a schematic side view showing a partial cross-section of the configuration of the upper clamping unit of the braking device shown in Figure 2. [Figure 6] Figure 6 is a schematic side view showing a partial cross-section of the pressure bar of the braking device shown in Figure 2. [Figure 7] Figure 7 is a schematic front view showing a partial cross-section of the load measurement section as seen from the direction of arrow VII shown in Figure 6. [Figure 8] Figure 8 is a flowchart showing the flow of the chip manufacturing method according to Embodiment 1. [Figure 9] Figure 9 is a schematic side view showing a partial cross-section of the configuration of the upper clamping unit in the wafer unit fixing step of the chip manufacturing method shown in Figure 8, with the clamping member and pressing bar aligned. [Figure 10]FIG. 10 is a diagram schematically showing a main part in a state where a clamping member and a pressing bar are aligned in a wafer unit fixing step of the method for manufacturing a chip shown in FIG. 8, in a partial cross section. [Figure 11] FIG. 11 is a diagram schematically showing a main part in a clamping step of the method for manufacturing a chip shown in FIG. 8, in a partial cross section. [Figure 12] FIG. 12 is a diagram schematically showing a main part in a state where the pressing bar is lowered in a first dividing step of the method for manufacturing a chip shown in FIG. 8, in a partial cross section. [Figure 13] FIG. 13 is a diagram schematically showing a main part in a state where the pressing bar is raised in a first dividing step of the method for manufacturing a chip shown in FIG. 8, in a partial cross section. [Figure 14] FIG. 14 is a side view schematically showing the configuration of an upper clamping unit in a state where the pressing bar is brought close to an upper clamping member in a second dividing step of the method for manufacturing a chip shown in FIG. 8, in a partial cross section. [Figure 15] FIG. 15 is a diagram schematically showing a main part in a state where the pressing bar is brought close to an upper clamping member in a second dividing step of the method for manufacturing a chip shown in FIG. 8, in a partial cross section. [Figure 16] FIG. 16 is a diagram schematically showing a main part in a state where the pressing bar is lowered in a second dividing step of the method for manufacturing a chip shown in FIG. 8, in a partial cross section.

Embodiments for Carrying Out the Invention

[0014] Embodiments (embodiment forms) for carrying out the present invention will be described in detail while referring to the drawings. The present invention is not limited by the content described in the following embodiments. Also, the constituent elements described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined as appropriate. Also, various omissions, substitutions, or changes in the configuration can be made without departing from the gist of the present invention.

[0015] 〔Embodiment 1〕 A method for manufacturing a chip according to Embodiment 1 of the present invention will be described based on the drawings. Figure 1 is a schematic perspective view showing a wafer unit comprising a wafer to be divided in the chip manufacturing method according to Embodiment 1.

[0016] (Wafer unit) The chip manufacturing method according to Embodiment 1 is a method of dividing the wafer 200 of the wafer unit 211 shown in Figure 1 into individual chips 210. The wafer 200 to be divided in the chip manufacturing method according to Embodiment 1 is, for example, a disc-shaped semiconductor wafer with SiC or the like as the substrate 201.

[0017] As shown in Figure 1, the wafer 200 has multiple intersecting division lines 203 on its surface 202, and a device 204 is formed in the region demarcated by the division lines 203. Thus, the wafer 200 has multiple division lines 203 parallel to one direction and multiple division lines 203 parallel to the other direction that intersect (orthogonal in Embodiment 1) with the one direction.

[0018] Device 204 is, for example, an integrated circuit such as an IC (Integrated Circuit) or LSI (Large Scale Integration), a CCD (Charge Coupled Device), or a memory (semiconductor memory device).

[0019] As shown in Figure 1, the wafer 200 has a splitting starting point 205 formed along the planned splitting line 203. In Embodiment 1, the splitting starting point 205 is a modified layer formed inside the substrate 201 along the planned splitting line 203. The modified layer refers to a region whose density, refractive index, mechanical strength, and other physical properties are different from those of the surrounding area, and examples include a melted region, a cracked region, a dielectric breakdown region, a refractive index change region, and a region where these regions are mixed. The modified layer has lower mechanical strength than other parts of the substrate 201.

[0020] In Embodiment 1, the wafer 200 is divided into individual chips 210 along a division line 203. Each chip 210 comprises a portion of the substrate 201 and a device 204 formed on the surface of the substrate 201. Thus, in Embodiment 1, the wafer 200 has division starting points 205 formed along the division line 203 that demarcates the chip region where the chips 210 are formed.

[0021] Furthermore, in Embodiment 1, as shown in Figure 1, the wafer 200 has a ductile material layer 212 (metal layer in Embodiment 1) made of a ductile material (metal in Embodiment 1) formed on the back surface 206 side of the surface 202 of the substrate 201. The ductile material layer 212 is divided for each chip 210. Also in Embodiment 1, as shown in Figure 1, the wafer unit 211 is composed of a disc-shaped sheet 207 which is attached to the ductile material layer 212 on the back surface 206 side of the surface 202 of the substrate 201 and has a larger diameter than the wafer 200, and an annular frame 208 which is attached to the outer circumference of the sheet 207 and has an inner diameter larger than the outer diameter of the wafer 200.

[0022] Thus, the wafer unit 211 consists of a wafer 200, a sheet 207 with the back surface 206 of the wafer 200 attached to its center, and a frame 208. In this invention, the wafer unit 211 does not need to include the frame 208, as long as it includes the wafer 200 and the sheet 207.

[0023] In Embodiment 1, the wafer 200 has a linear orientation flat 213 formed on its outer edge that shows the crystal structure of the substrate 201. The orientation flat 213 is parallel to one of the intersecting division lines 203.

[0024] The sheet 207 is an adhesive tape comprising a base layer made of a resin having non-adhesive and flexible properties, and an adhesive layer laminated on the base layer and made of a resin having adhesive and flexible properties, with the adhesive layer being attached to the wafer 200 and frame 208. The sheet 207 is also stretchable.

[0025] (Braking device) The chip manufacturing method according to Embodiment 1 is carried out by the braking device 1 shown in Figure 2. Next, the braking device 1 will be described. Figure 2 is a schematic perspective view showing an example of the configuration of a braking device for carrying out the chip manufacturing method according to Embodiment 1. Figure 3 is a schematic side view showing a partial cross-section of the configuration of the braking device shown in Figure 2. Figure 4 is a schematic perspective view showing the configuration of the lower clamping unit of the clamping unit of the braking device shown in Figure 2. Figure 5 is a schematic side view showing a partial cross-section of the configuration of the upper clamping unit of the clamping unit of the braking device shown in Figure 2. Figure 6 is a schematic side view showing a partial cross-section of the pressing bar of the braking device shown in Figure 2. Figure 7 is a schematic front view showing a partial cross-section of the load measuring section viewed from the direction of arrow VII shown in Figure 6.

[0026] The breaking device 1 shown in Figure 2 is a device for manufacturing chips 210 by dividing a wafer 200 along a planned division line 203. As shown in Figures 2 and 3, the breaking device 1 comprises a fixing unit 10, a detection unit 20, a clamping unit 40, a pressing bar 60 (corresponding to a pressing member), a control unit 100, a display unit 110, and an input unit (not shown).

[0027] The fixing unit 10 fixes the wafer unit 211 via a frame 208. The fixing unit 10 comprises a movable frame 11 mounted on the apparatus body 2 so as to be movable in the X-axis direction parallel to the horizontal direction by an X-axis moving unit 30, and a frame fixing member 12 disposed on the movable frame 11.

[0028] The frame fixing member 12 is formed in an annular shape with inner and outer diameters equal to the inner and outer diameters of the frame 208. The upper surface of the frame fixing member 12 is a holding surface 13 on which the frame 208 is placed via the outer circumference of the sheet 207. The holding surface 13 is flat along the horizontal direction. In Embodiment 1, the frame fixing member 12 has a suction hole opening in the holding surface 13, which is connected to a suction source (not shown).

[0029] The fixing unit 10 fixes the frame 208 placed on the holding surface 13 by attracting it through the attraction of the suction hole by the suction source. In this invention, if the frame 208 is made of a magnetic material, the fixing unit 10 may have a magnet (permanent magnet or electromagnet) placed inside the frame fixing member 12 and fix the frame 208 placed on the holding surface 13 by magnetic attraction. If the frame 208 is made of a non-magnetic material, the fixing unit 10 may be equipped with a clamping mechanism that holds the frame 208 between itself and the holding surface 13 to fix the frame 208.

[0030] Furthermore, the fixing unit 10 is rotatable around an axis parallel to the Z-axis direction (also called the vertical direction) by a rotational drive mechanism (not shown). In addition, in the present invention, if the wafer unit 211 does not include a frame 208, the fixing unit 10 may be configured to fix the outer peripheral excess region of the unformed outer edge of the wafer 200 via the sheet 207.

[0031] The X-axis movement unit 30 is installed on the main body 2 of the device and includes a well-known ball screw that is rotatable around its axis, a well-known motor that moves the movement frame 11 and the frame fixing member 12 in the X-axis direction by rotating the ball screw around its axis, and a well-known guide rail 31 that supports the movement frame 11 so that it can move in the X-axis direction.

[0032] The detection unit 20 detects the planned division line 203 of the wafer 200 of the wafer unit 211, whose frame 208 is fixed by the fixing unit 10. The detection unit 20 is installed on a movable table 4 that is moved in the Y-axis direction, parallel to the horizontal direction and perpendicular to the X-axis direction, by a Y-axis moving unit 32 on a gate-shaped frame 3 which is erected from the main body of the apparatus 2, straddling the guide rail 31 of the X-axis moving unit 30. By being installed on the movable table 4, the detection unit 20 is arranged to be freely movable in the Y-axis direction by the Y-axis moving unit 32.

[0033] The detection unit 20 includes an imaging camera 21 equipped with an image sensor such as a CCD (Charge Coupled Device) image sensor or a CMOS (Complementary MOS) image sensor, which images objects facing each other in the Z-axis direction parallel to the vertical direction. The detection unit 20 acquires the image captured by the image sensor and outputs the acquired image to the control unit 100. The detection unit 20 also images the wafer 200 housed in the opening 209 of the frame 208 of the wafer unit 211 fixed by the fixing unit 10, detects the planned division line 203 of the wafer 200, and acquires an image for performing alignment, which involves aligning the planned division line 203 of the wafer 200 with the pressing bar 60, etc.

[0034] The gantry frame 3 and the mobile table 4 are flat plates with both surfaces parallel to the vertical and parallel to the Z-axis direction, and are stacked parallel to each other with a gap between them. The Y-axis movement unit 32 is installed on the gantry frame 3 and includes a well-known ball screw that is rotatable around its axis, a well-known motor that moves the mobile table 4 in the Y-axis direction by rotating the ball screw around its axis, and a well-known guide rail 33 that supports the mobile table 4 so that it can move in the Y-axis direction.

[0035] The clamping unit 40 clamps the device 204 of the wafer 200 in the region adjacent to the division line 203 to be divided, from above and below along the Z-axis direction. As shown in Figure 2, the clamping unit 40 comprises a lower clamping unit 41 and an upper clamping unit 50.

[0036] The lower clamping unit 41 is positioned below the fixing unit 10 and presses from below the device 204 of the wafer 200, which is a region of the wafer 200 housed in the opening 209 of the frame 208 of the wafer unit 211 fixed to the fixing unit 10, that is adjacent to the division line 203 to be divided. As shown in Figure 4, the lower clamping unit 41 comprises a bracket 42 that is provided to be able to move up and down in the Z-axis direction by a Z-axis movement unit 34, a rotating body 43 that is rotatably supported by the bracket 42 around its axis, and a plurality of rectangular clamping members 44 (corresponding to clamping parts) of different lengths that protrude from the outer circumferential surface of the rotating body 43.

[0037] The rotating body 43 has its axis positioned parallel to the Y-axis direction, and both ends are rotatably supported by brackets 42. The rotating body 43 is rotated around its axis by a rotation mechanism (not shown). The multiple rectangular clamping members 44 are each formed as a straight rectangular plate in the Y-axis direction with a constant thickness, and are formed to have various lengths in the Y-axis direction. The length of the longest rectangular clamping member 44 is approximately the diameter of the wafer 200 (i.e., the maximum length of the planned division line 203) + 10 mm. The rotating body 43 is equipped with several types (for example, a total of four) of rectangular clamping members 44 that are shorter than the longest rectangular clamping member 44, so that the lengths of the rectangular clamping members 44 do not collide with the frame 208 when the planned division line 203 is divided.

[0038] The orientation in which the multiple rectangular clamping members 44 protrude is changed by the rotation of the rotating body 43. Of the multiple rectangular clamping members 44, the rectangular clamping member 44 positioned upward along the Z-axis direction from the rotating body 43 is positioned below the sheet 207 attached to the wafer 200 housed in the opening 209 of the frame 208 fixed by the fixing unit 10 when lowered by the Z-axis moving unit 34, and above the wafer 200 housed in the opening 209 of the frame 208 fixed by the fixing unit 10 when raised by the Z-axis moving unit 34. Of the multiple rectangular clamping members 44, the rectangular clamping member 44 positioned upward along the Z-axis direction from the rotating body 43 is positioned upward when raised by the Z-axis moving unit 34, with its upper end pressing upward from the back surface 206 side against the device 204 adjacent to the planned division line 203 of the wafer 200 to be divided.

[0039] In other words, the lower clamping unit 41 can select the length of the upward-facing rectangular clamping member 44 by changing the orientation of the rotating body 43 around its axis, and uses the selected rectangular clamping member 44 to press upward from the back surface 206 side of the device 204 adjacent to the division line 203 of the wafer 200 that is to be divided.

[0040] The Z-axis movement unit 34 includes a well-known ball screw rotatably mounted around its axis, a well-known motor that raises and lowers the bracket 42 in the Z-axis direction by rotating the ball screw around its axis, and a well-known guide rail 35 that supports the bracket 42 so that it can be raised and lowered in the Z-axis direction.

[0041] The upper clamping unit 50 is positioned above the fixed unit 10 and clamps the device 204 between itself and the lower clamping unit 41, in the region adjacent to the planned division line 203 of the wafer 200 housed in the opening 209 of the frame 208 fixed by the fixed unit 10, and which is being pressed from below by the lower clamping unit 41. The upper clamping unit 50 is mounted on the movable base 5 and positioned next to the detection unit 20 in the Y-axis direction. The movable base 5 is moved in the Z-axis direction by the lifting unit 36 ​​mounted on the movable table 4.

[0042] The movable base 5 is formed as a flat plate with both surfaces parallel to the Z-axis direction and is stacked on the movable table 4 with gaps between them. A horizontal member 6, with both surfaces parallel to the horizontal direction, is fixed to the movable base 5.

[0043] The lifting unit 36 ​​is installed on the movable table 4 and includes a well-known ball screw that is rotatable around its axis, a well-known motor 37 that raises and lowers the movable base 5 in the Z-axis direction by rotating the ball screw around its axis, and a well-known guide rail 38 that supports the movable base 5 so that it can be raised and lowered in the Z-axis direction.

[0044] As shown in Figure 5, the upper clamping unit 50 comprises a cylinder unit 51, an upper clamping member 52 (corresponding to the clamping portion), and a slide unit 53. The cylinder unit 51 comprises a cylinder 54 fixed to the horizontal member 6, and a rod 55 formed in the shape of a rod parallel to the Z-axis direction, which is extendable and retractable from the cylinder 54, and whose lower end descends when extended from the cylinder 54.

[0045] The upper clamping member 52 is formed in the shape of a rectangular plate with a constant thickness, a straight line in the Y-axis direction, and both surfaces parallel to the Z-axis direction, and its length in the Y-axis direction is equivalent to the length of the longest planned division line 203 of the wafer 200. The lower end of the rod 55 of the cylinder unit 51 is fixed to the upper end of the upper clamping member 52, and it is stacked on the movable base 5 with a gap between them. The upper clamping member 52 faces the rectangular clamping member 44, which is facing upward from the rotating body 43, in the Z-axis direction.

[0046] Furthermore, the slide unit 53 supports the upper clamping member 52 so that it can slide relative to the movable base 5 in the Z-axis direction. The slide unit 53 includes a linear guide rail 56 fixed to the movable base 5, which is one of the movable base 5 and the upper clamping member 52, and parallel to the Z-axis direction, and a slider 57 fixed to the upper clamping member 52, which is the other of the movable base 5 and the upper clamping member 52, and slidably supported by the guide rail 56 in the longitudinal direction of the guide rail 56, i.e., in the Z-axis direction.

[0047] When the rod 55 is extended, the upper clamping member 52 is raised by the lifting unit 36 ​​so that its lower end is above the wafer 200 housed in the opening 209 of the frame 208 of the wafer unit 211, which is fixed by the fixing unit 10. When it is lowered by the lifting unit 36, its lower end clamps a device 204 adjacent to the planned division line 203 of the wafer 200, which is pressed by the rectangular clamping member 44 positioned upward along the Z-axis from the rotating body 43, between the upper clamping member 52 and the rectangular clamping member 44.

[0048] Thus, the clamping members 44 and 52 of the clamping unit 40 correspond to a pair of clamping parts that clamp the device 204 of the wafer 200 in the region adjacent to the division line 203 to be divided, from above and below the wafer unit 211.

[0049] The pressing bar 60 presses the area adjacent to the division line 203 on the opposite side in the Y-axis direction of the clamping members 44 and 52 of the clamping unit 40, thereby braking (also called dividing) the wafer 200 along the division line 203. As shown in Figure 5, the pressing bar 60 is installed on the pressing and moving base 62.

[0050] The pressing and moving base 62 is formed with both surfaces parallel to the Z-axis direction and integrally comprising a thick-walled portion 63 at the upper end and a thin-walled portion 64 at the lower end, and is stacked on the upper clamping member 52 with a gap between them. In Embodiment 1, the pressing and moving base 62 has surfaces on the side of the thick-walled portion 63 and the thin-walled portion 64 away from the upper clamping member 52 that are in the same plane, and a step is formed between the thick-walled portion 63 and the thin-walled portion 64 on the upper clamping member 52 side. Also in Embodiment 1, the pressing and moving base 62 is provided with a rectangular opening 65 that penetrates the thin-walled portion 64. The pressing and moving base 62 is moved in the X-axis direction by the second X-axis moving unit 61.

[0051] The second X-axis movement unit 61 is attached to the horizontal member 6. The second X-axis movement unit 61 comprises a well-known ball screw rotatably mounted around its axis, a well-known motor 66 that moves the pressing movement base 62 in the X-axis direction by rotating the ball screw around its axis, and a well-known guide rail 67 that supports the pressing movement base 62 so that it can move in the X-axis direction.

[0052] The pressing bar 60 is formed in a rectangular plate shape that is linear in the Y-axis direction and has both surfaces parallel to the Z-axis direction, and its length in the Y-axis direction is equivalent to the length of the longest planned division line 203 of the wafer 200. The pressing bar 60 has a tapered portion 68 formed at its lower end, which gradually becomes thinner as it goes downwards. In Embodiment 1, the tapered portion 68 has a surface on the upper clamping member 52 side that is formed flat along the Z-axis direction, and the surface on the side away from the upper clamping member 52 is inclined with respect to both the horizontal and Z-axis directions in a direction that gradually approaches the upper clamping member 52 as it goes downwards.

[0053] Furthermore, the pressing bar 60 is supported by a pair of slide units 69 so as to be slidable in the Z-axis direction on the pressing movement base 62. The pair of slide units 69 are spaced apart in the Y-axis direction. Each slide unit 69 comprises a linear guide rail 691 fixed to the pressing movement base 62, which is one of the pressing movement base 62 and the pressing bar 60, and parallel to the Z-axis direction, and a slider 692 fixed to the pressing bar 60, which is the other of the pressing movement base 62 and the pressing bar 60, and supported by the guide rail 691 so as to be slidable in the longitudinal direction of the guide rail 691, i.e., in the Z-axis direction.

[0054] When the pressing bar 60 is raised by the lifting unit 36, its lower end is positioned above the wafer 200 housed in the opening 209 of the frame 208, which is fixed by the fixing unit 10. When it is lowered by the lifting unit 36, it presses downward the device 204 of the wafer 200, positioning the division line 203 to be divided between the clamping members 44 and 52.

[0055] When the pressing bar 60 is lowered by the lifting unit 36, it presses downward in the Y-axis direction, positioning the device 204 of the wafer 200 between the clamping members 44 and 52 along the division line 203 to be divided, thereby dividing the division line 203.

[0056] Furthermore, the pressing bar 60 is fixed to the pressing and moving base 62 by a load measuring unit 70 shown in Figure 6. The load measuring unit 70 is located between a pair of slide units 69. As shown in Figures 6 and 7, the load measuring unit 70 includes a load meter 71 for measuring the value of the load applied by the pressing bar 60 to the wafer 200 (hereinafter referred to as the load value), a holding member 72, a support member 73, a spring 75, and a support part 74 (shown only in Figure 7).

[0057] The load cell 71 measures the load value applied by the pressing bar 60 in the Z-axis direction to the wafer 200. In Embodiment 1, it is a well-known load cell, but it is not limited to a load cell. The load cell 71 outputs the measured load value to the control unit 100. The load cell 71 is located inside the opening 65 of the pressing and moving base 62.

[0058] The holding member 72 has one end fixed to the pressing bar 60, extends from the pressing bar 60 toward the pressing movable base 62, and has its other end positioned within the opening 65 of the pressing movable base 62. The other end of the holding member 72 supports the lower end of the load cell 71.

[0059] The support member 73 is positioned within the opening 65 of the pressing and moving base 62, with its upper end fixed to the upper inner surface of the opening 65 and its lower end supporting the upper end of the load cell 71. The support portion 74 is positioned within the opening 65 of the pressing and moving base 62, with its lower end fixed to the lower inner surface of the opening 65 and its upper end supporting the lower end of the holding member 72.

[0060] The spring 75 is positioned between the lower inner surface of the opening 65 and the other end of the holding member 72, and biases the pressing bar 60 upward relative to the pressing movement base 62 via the other end of the holding member 72. In Embodiment 1, the spring 75 biases the holding member 72 and the pressing bar 60 upward with a force corresponding to the combined mass of the pressing bar 60, the holding member 72 and the load cell 71. By biasing with the aforementioned force, the combined mass of the pressing bar 60, the holding member 72 and the load cell 71 cancels out, and the load cell 71 can measure a load value smaller than the combined mass of the pressing bar 60, the holding member 72 and the load cell 71. Thus, the braking device 1 is equipped with a load cell 71 that measures the load value at which the pressing bar 60 presses the wafer 200.

[0061] The control unit 100 controls each of the above-described components of the braking device 1 to cause the braking device 1 to perform a splitting operation to split each of the planned splitting lines 203 of the wafer 200. The control unit 100 is a computer having an arithmetic processing unit with a microprocessor such as a CPU (central processing unit), a storage device with memory such as ROM (read-only memory) or RAM (random access memory), and an input / output interface device.

[0062] The arithmetic processing unit of the control unit 100 performs calculations according to the computer program stored in the memory device and outputs control signals for controlling the braking device 1 to the aforementioned units of the braking device 1 via the input / output interface device. The control unit 100 also determines the division result of the planned division line 203 based on the load value measured by the load cell 71 and stores the division result in a one-to-one correspondence with the planned division line 203.

[0063] The display unit 110 is connected to the control unit 100 and includes a display screen 111 that displays various information. The input unit is used when an operator inputs information to the control unit 100 of the braking device 1. The input unit is connected to the control unit 100 and outputs the input information to the control unit 100. The input unit includes a touch panel superimposed on the display screen 111 of the display unit 110.

[0064] (Method of manufacturing chips) Next, a method for manufacturing a chip according to Embodiment 1 will be described. Figure 8 is a flowchart showing the flow of the method for manufacturing a chip according to Embodiment 1. The method for manufacturing a chip according to Embodiment 1 is a method for manufacturing a chip 210 by dividing a wafer 200 along a planned division line 203. In Embodiment 1, as shown in Figure 8, the method for manufacturing a chip comprises a wafer unit fixing step 301, a clamping step 302, a first division step 303, and a second division step 304.

[0065] (Wafer unit fixing process) Figure 9 is a schematic side view in partial cross-section showing the configuration of the upper clamping unit in the wafer unit fixing step of the chip manufacturing method shown in Figure 8, with the clamping member and pressing bar aligned. Figure 10 is a schematic diagram in partial cross-section showing the main part in the wafer unit fixing step of the chip manufacturing method shown in Figure 8, with the clamping member and pressing bar aligned.

[0066] The wafer unit fixing step 301 is a step in which the sheet 207 of the wafer unit 211 with the configuration described above is fixed. In Embodiment 1, in the wafer unit fixing step 301, the braking device 1 first receives input conditions from an operator or the like by operating the input unit, and the control unit 100 receives and registers the splitting conditions. When the control unit 100 receives an instruction from the operator or the like to start the splitting operation, the braking device 1 starts the splitting operation, which in Embodiment 1 is the wafer unit fixing step 301.

[0067] In Embodiment 1, during the wafer unit fixing process 301, the braking device 1 controls the Z-axis movement unit 34 via the control unit 100 to lower the lower clamping unit 41, the cylinder unit 51 of the upper clamping unit 50 to retract the rod 55, and the lifting unit 36 ​​to raise the upper clamping unit 50 and the pressing bar 60. Also in Embodiment 1, during the wafer unit fixing process 301, the braking device 1 controls the second X-axis movement unit 61 via the control unit 100 to adjust the position of the pressing bar 60 in the X-axis direction so that the distance 400 in the X-axis direction between the lower end of the upper clamping member 52 and the lower end of the pressing bar 60 is 75% to 85% of the width of the chip 210 included in the division conditions, as shown in Figure 9. In this invention, the X-axis position of the pressing bar 60 can be adjusted so that the distance 400 in the X-axis direction between the lower end of the upper clamping member 52 and the lower end of the pressing bar 60 is 65% to 95% of the width of the tip 210 (i.e., greater than 50% and less than 100%).

[0068] Furthermore, in Embodiment 1, during the wafer unit fixing process 301, the braking device 1 controls the X-axis movement unit 30 via the control unit 100 to retract the fixing unit 10 from between the clamping units 41 and 50. In Embodiment 1, during the wafer unit fixing process 301, the braking device 1 places the frame 208 of the wafer unit 211, which houses the wafer 200 in the opening 209, onto the holding surface 13 of the fixing unit 10. In Embodiment 1, during the wafer unit fixing process 301, the braking device 1 uses the control unit 100 to operate the suction source to suck and fix the frame 208 to the holding surface 13 of the fixing unit 10, thereby fixing the sheet 207 to the fixing unit 10.

[0069] In Embodiment 1, during the wafer unit fixing process 301, the braking device 1 controls the X-axis movement unit 30 and the Y-axis movement unit 32 via the control unit 100 to position the detection unit 20 above the wafer 200 of the wafer unit 211, and then uses the imaging camera 21 of the detection unit 20 to image the surface 202 of the wafer 200. In Embodiment 1, during the wafer unit fixing process 301, the braking device 1 detects the division line 203 based on the image obtained by the imaging camera 21 of the detection unit 20 via the control unit 100. In Embodiment 1, the imaging of the surface 202 of the wafer 200 with the imaging camera 21 may be performed at predetermined timings, such as each division line 203 is divided, or every five division lines 203 are divided.

[0070] In Embodiment 1, during the wafer unit fixing process 301, the braking device 1 controls the rotational drive mechanism of the fixing unit 10 via the control unit 100, so that the fixing unit 10 positions the planned division line 203 of the wafer 200 of the wafer unit 211, which has the frame 208 fixed to it, parallel to the Y-axis direction.

[0071] In Embodiment 1, during the wafer unit fixing process 301, the braking device 1 is controlled by a control unit 100 which controls the rotation mechanism to position a rectangular clamping member 44, having a length corresponding to the first division line 203 to be divided (hereinafter indicated by reference numeral 203-1, corresponding to the first division line), upward from the rotating body 43. In Embodiment 1, the chip manufacturing method is described as dividing sequentially from the division line 203-1 located at one end of the plurality of division lines 203 toward the division line 203 located at the other end, and in Figure 10, the division is described as being divided first at the division line 203-1 located at the very end.

[0072] In Embodiment 1, during the wafer unit fixing process 301, the braking device 1 controls the X-axis movement unit 30 and the Y-axis movement unit 32 based on the position of the planned division line 203 detected by the imaging camera 21 of the detection unit 20, as shown in Figure 10. The lower end of the upper clamping member 52 is positioned above the device 204 (hereinafter referred to as reference numeral 204-1, in Embodiment 1, the device 204 on the central side of the wafer 200), which is a first region adjacent to the planned division line 203-1 and near the other end of the planned division line 203-1. The upper end of the rectangular clamping member 44 is positioned below the device 204-1, which is the first region.

[0073] Furthermore, in Embodiment 1, during the wafer unit fixing process 301, the braking device 1 positions the pressing bar 60 above the second region 214 (in Embodiment 1, the region on the outer periphery of the wafer 200 where device 204 is not formed) adjacent to the division line 203-1 and away from the other end of the division line 203-1, as shown in Figure 10. The second region 214 is the region adjacent to the division line 203-1 on the opposite side of the first region, which is device 204-1, across the division line 203-1.

[0074] (Pinching process) Figure 11 is a schematic diagram showing a partial cross-section of the main part of the clamping process of the chip manufacturing method shown in Figure 8. The clamping process 302 is a process in which the device 204-1, which is a first region adjacent to the division line 203-1 to be divided on the wafer 200 of the wafer unit 211 fixed in the wafer unit fixing process 301, is clamped by clamping members 44 and 52 from the front surface 202 and back surface 206 sides of the wafer 200 of the wafer unit 211.

[0075] In Embodiment 1, during the clamping process 302, the braking device 1, with the control unit 100 controlling the Z-axis movement unit 34, raises the rotating body 43 and the rectangular clamping member 44, pressing upward the device 204-1, which is the first region adjacent to the planned division line 203-1 of the wafer 200, via the sheet 207. As a result, the wafer 200 rises, and as shown in Figure 11, the device 204-1, which is the first region, comes into contact with the lower end of the upper clamping member 52 via the protective sheet 220.

[0076] In this invention, during the clamping step 302, the braking device 1 may either have the upper clamping member 52 descend after the rotating body 43 and the rectangular clamping member 44 have risen, or the upper clamping member 52 may descend simultaneously with the rising of the rotating body 43 and the rectangular clamping member 44 to clamp the wafer 200. Alternatively, in this invention, during the clamping step 302, the upper clamping member 52 and the rectangular clamping member 44 may be positioned to clamp the wafer 200 at a position where the wafer 200 neither rises nor falls. In this case, there is the advantage that no unnecessary load is placed on the wafer 200.

[0077] Thus, in Embodiment 1, during the clamping step 302, the braking device 1 clamps the device 204-1, which is a first region adjacent to the planned division line 203-1 of the wafer 200, between the clamping members 44 and 52 from the front surface 202 and back surface 206 sides via the sheet 207, as shown in Figure 11.

[0078] (1st division process) Figure 12 is a schematic diagram showing a partial cross-section of the main part of the chip manufacturing method shown in Figure 8 with the pressing bar lowered during the first splitting step. Figure 13 is a schematic diagram showing a partial cross-section of the main part of the chip manufacturing method shown in Figure 8 with the pressing bar raised during the first splitting step. The first splitting step 303 is a step in which, after performing the clamping step 302, the second region 214 adjacent to the splitting line 203-1, on the opposite side of the clamping members 44, 52, is pressed with the pressing bar 60 from the side of the surface 202 of the wafer 200 along the splitting line 203-1.

[0079] In Embodiment 1, during the first splitting step 303, the braking device 1 controls the lifting unit 36 ​​via the control unit 100 based on the splitting conditions, lowering the movable base 5 and pressing bar 60 of the upper clamping unit 50 while the wafer 200 is being held between the clamping members 44 and 52. As a result, the upper clamping member 52 holds the device 204-1 adjacent to the planned splitting line 203-1 of the wafer 200 via the sheet 207 between it and the rectangular clamping member 44, so the rod 55 of the cylinder unit 51 retracts without the upper clamping member 52 descending, and the upper clamping member 52 rises relative to the movable base 5 by the slide unit 53.

[0080] Furthermore, as the movable base 5 and the pressing bar 60 of the upper clamping unit 50 descend, the lower end of the pressing bar 60 contacts a second region 214 adjacent to the planned division line 203-1 on the opposite side of the clamping units 41 and 50 on the surface 202 of the wafer 200. As the pressing bar 60 descends further, as shown in Figure 12, the lower end of the pressing bar 60 is positioned below the lower end of the upper clamping member 52, dividing the substrate 201 along the planned division line 203-1 between the clamping members 44 and 52 and the pressing bar 60.

[0081] Furthermore, in Embodiment 1, in the first division step 303, the distance 400 in the X-axis direction between the lower end of the upper clamping member 52 and the lower end of the pressing bar 60 is 75% to 85% of the width of the tip 210. Therefore, a bending stress is applied to the second region 214, mainly on the back surface 206 side of the planned division line 203-1, causing the ductile material layer 212 to elastically deform and curve. In Embodiment 1, in the first division step 303, the braking device 1, based on the division conditions, has the control unit 100 control the lifting unit 36 ​​to lower the movable base 5 of the upper clamping unit 50 and the pressing bar 60, and then raise them again as shown in Figure 13. As a result, the ductile material layer 212 and the second region 214 return to their positions before the pressing bar 60 was lowered.

[0082] (2nd division process) Figure 14 is a schematic side view showing a partial cross-section of the configuration of the upper clamping unit in the second division step of the chip manufacturing method shown in Figure 8, with the pressing bar brought close to the upper clamping member. Figure 15 is a schematic diagram showing a partial cross-section of the main part in the second division step of the chip manufacturing method shown in Figure 8, with the pressing bar brought close to the upper clamping member. Figure 16 is a schematic diagram showing a partial cross-section of the main part in the second division step of the chip manufacturing method shown in Figure 8, with the pressing bar lowered.

[0083] The second splitting step 304 is a step in which, after performing the first splitting step 303, the pressing bar 60 is applied to the second region 214 at a position closer to the planned splitting line 203-1 than the position pressed in the first splitting step 303, along the planned splitting line 203-1, from the surface 202 side, thereby splitting the wafer 200 along the planned splitting line 203. In Embodiment 1, in the second splitting step 304, the braking device 1 has a control unit 100 that controls the second X-axis movement unit 61 to adjust the position of the pressing bar 60 in the X-axis direction so that the distance 401 in the X-axis direction between the lower end of the upper clamping member 52 and the lower end of the pressing bar 60 is 10% to 20% (i.e., greater than 0% and less than 50%) of the width of the chip 210 included in the splitting conditions, as shown in Figures 14 and 15.

[0084] Thus, in Embodiment 1, the distance between the position on the wafer 200 pressed by the pressing bar 60 and the planned division line 203-1 in the second division step 304, i.e., the distance in the X-axis direction between the lower end of the upper clamping member 52 and the lower end of the pressing bar 60, 401 (shown in Figures 14 and 15), is greater than 0 mm and less than or equal to half of the distance between the position on the wafer 200 pressed by the pressing bar 60 and the planned division line 203-1 in the first division step 303, i.e., the distance in the X-axis direction between the lower end of the upper clamping member 52 and the lower end of the pressing bar 60, 400 (shown in Figures 9 and 10). Furthermore, in Embodiment 1, the distance between the position on the wafer 200 pressed by the pressing bar 60 and the planned division line 203-1 in the second division step 304, i.e., the distance in the X-axis direction between the lower end of the upper clamping member 52 and the lower end of the pressing bar 60, 401, is greater than 0 mm and less than or equal to 0.56 mm.

[0085] In Embodiment 1, during the second splitting step 304, the braking device 1 controls the lifting unit 36 ​​via the control unit 100 based on the splitting conditions, and while the wafer 200 is being held between the clamping members 44 and 52, the movable base 5 and the pressing bar 60 of the upper clamping unit 50 are lowered to a position lower than that of the first splitting step 303. Then, similar to the first splitting step 303, the lower end of the pressing bar 60 comes into contact with the second region 214 adjacent to the planned splitting line 203-1 on the opposite side of the clamping units 41 and 50 on the surface 202 of the wafer 200.

[0086] Furthermore, in Embodiment 1, in the second splitting step 304, the distance 401 in the X-axis direction between the lower end of the upper clamping member 52 and the lower end of the pressing bar 60 is 10% to 20% of the width of the chip 210. As the pressing bar 60 descends further, the lower end of the pressing bar 60 presses downward on the second region 214, applying shear stress to the ductile material layer 212 laminated in the second region 214, and splitting the ductile material layer 212 along the planned splitting line 203-1, as shown in Figure 16. Furthermore, in Embodiment 1, in the second splitting step 304, the pressing bar 60 is lowered further than in the first splitting step 303. Therefore, the pressing distance 411 (shown in Figure 16) in the thickness direction of the wafer 200 when the wafer 200 is pressed by the pressing bar 60 in the second splitting step 304 is greater than the pressing distance 410 (shown in Figure 12) in the thickness direction of the wafer 200 when the wafer 200 is pressed by the pressing bar 60 in the first splitting step 303. Note that the pressing distances 410 and 411 are the distance in the thickness direction (Z-axis direction) between the lower end of the lowered pressing bar 60 and the surface 202 of the wafer 200 in the splitting steps 303 and 304.

[0087] In the second division process 304, the braking device 1 controls the lifting unit 36 ​​via the control unit 100 based on the division conditions to lower the movable base 5 and the pressing bar 60 of the upper clamping unit 50, and then raise them again. In Embodiment 1, in the first division process 303 and the second division process 304, the control unit 100 determines the division result of the division line 203-1 to be divided based on the load value measured by the load cell 71, and stores the determined division result in association with the division line 203-1.

[0088] In the chip manufacturing method according to Embodiment 1, the braking device 1 determines whether the control unit 100 has divided all of the division lines 203 of the wafer 200 (step 305). In the chip manufacturing method according to Embodiment 1, if the braking device 1 determines that the control unit 100 has not divided all of the division lines 203 of the wafer 200 (step 305: No), it determines whether all of the division lines 203 parallel to one direction have been divided. In the chip manufacturing method according to Embodiment 1, if the braking device 1 determines that the control unit 100 has not divided all of the division lines 203 parallel to one direction of the wafer 200, it returns to the clamping step 302.

[0089] In the return clamping step 302, the braking device 1 positions a rectangular clamping member 44 upward from the rotating body 43, with a length corresponding to the pre-division division line 203 (hereinafter referred to as reference numeral 203-2) adjacent to the already divided division line 203-1. In the return clamping step 302, the braking device 1 clamps the device 204 (hereinafter referred to as device 204-2), which is the first region adjacent to the pre-division division line 203-2, with the clamping members 44 and 52. Subsequently, in the first division step 303, the pressing bar 60, etc. is lowered to press the device 204-1, which is the second region, and divides the substrate 201 along the division line 203-2. In the second division step 304, the pressing bar 60, etc. is lowered to press the device 204-1, which is the second region, and divides the ductile material layer 212 along the division line 203-2.

[0090] Thus, the chip manufacturing method according to Embodiment 1 repeats the clamping step 302, the first division step 303, and the second division step 304 to sequentially divide the multiple division lines 203 from the division line 203 located at one end toward the division line 203 located at the other end, thereby dividing all of the division lines 203 that are parallel to one direction.

[0091] In the chip manufacturing method according to Embodiment 1, when the control unit 100 determines that all of the planned division lines 203 parallel to one direction of the wafer 200 have been divided, the braking device 1 rotates the fixing unit 10 90 degrees around its axis using the rotational drive mechanism, and then returns to the clamping process 302. In the chip manufacturing method according to Embodiment 1, the braking device 1 has the control unit 100 repeatedly perform the clamping process 302, the first division process 303, and the second division process 304 to divide all of the planned division lines 203 parallel to the other direction. When the braking device 1 determines that all of the planned division lines 203 of the wafer 200 have been divided (step 305: Yes), the division operation is terminated. After that, the divided chips 210 are picked up from the sheet 207.

[0092] The chip manufacturing method according to Embodiment 1 described above has the effect of making the distance 401 of the second splitting step 304 shorter than the distance 400 of the first splitting step 303, and applying shear stress to the wafer 200 in the second splitting step 304, thereby enabling the ductile material layer 212 to be split along the planned splitting line 203.

[0093] As a result, the chip manufacturing method according to Embodiment 1 has the effect of suppressing burrs generated when dividing the ductile material layer 212, and enabling stable division of the metal layer without compromising quality.

[0094] Furthermore, in the chip manufacturing method according to Embodiment 1, the distance 401 in the second splitting step 304 is set to less than 50% of the width of the chip 210, and the distance 400 in the first splitting step 303 is set to more than 50% of the width of the chip 210. Therefore, in the first splitting step 303, bending stress is applied to the wafer 200 to split the substrate 201 along the planned splitting line 203, and in the second splitting step 304, shear stress is applied to the wafer 200 to split the ductile material layer 212 along the planned splitting line 203.

[0095] Next, the inventors of the present invention confirmed the effectiveness of the chip manufacturing method according to Embodiment 1. The results are shown in Table 1 below.

[0096] [Table 1]

[0097] For verification purposes, a wafer 200 in which the width of the chip 210 parallel to the orientation flat 213 was 2.8 mm and the width of the chip 210 perpendicular to the orientation flat 213 was 2.5 mm was used to verify the results of the aforementioned breaking device 1 being divided using the methods of Example 1, Example 2, Example 3, Comparative Example 1, and Comparative Example 2.

[0098] In Example 1, the wafer 200 was divided using the chip manufacturing method described in Embodiment 1 above, and the pressing distance 410 of the first division step 303 when dividing the planned division lines 203 in both the direction parallel to and perpendicular to the orientation flat 213 was set to 0.12 mm, and the pressing distance 411 of the second division step 304 was set to 0.18 mm. In Example 1, the downward speed of the pressing bar 60 in the first division step 303 and the second division step 304 when dividing the planned division lines 203 in both the direction parallel to and perpendicular to the orientation flat 213 was set to 3 mm / sec.

[0099] In Example 1, when dividing the planned division line 203 in a direction parallel to the orientation flat 213, the distance 400 of the first division step 303 was set to 1.1 mm, and the distance 401 of the second division step 304 was set to 0.56 mm. In Example 1, when dividing the planned division line 203 in a direction perpendicular to the orientation flat 213, the distance 400 of the first division step 303 was set to 1.2 mm, and the distance 401 of the second division step 304 was set to 0.5 mm.

[0100] Example 2 divides the wafer 200 using the chip manufacturing method shown in Embodiment 1 described above, and is the same as Example 1 except for the distance 401 of the second division step 304. In Example 2, the distance 401 of the second division step 304 when dividing the division line 203 in a direction parallel to the orientation flat 213 is set to 0.55 mm, i.e., half of the distance 400 of the first division step 303. In Example 2, the distance 401 of the second division step 304 when dividing the division line 203 in a direction perpendicular to the orientation flat 213 is set to 0.6 mm, i.e., half of the distance 400 of the first division step 303.

[0101] Example 3 divides the wafer 200 using the chip manufacturing method described in Embodiment 1, and is the same as Example 1 except for the distance 401 in the second division step 304. In Example 3, the distance 401 in the second division step 304 when dividing the planned division lines 203 in both the direction parallel to and perpendicular to the orientation flat 213 is set to 0.56 mm.

[0102] Comparative Example 1 divides the wafer 200 using a conventional method without performing the second dividing step 304 of Embodiment 1, setting the pressing distance 410 when dividing the division line 203 parallel to the orientation flat 213 to 0.05 mm and the pressing distance 410 when dividing the division line 203 perpendicular to the orientation flat 213 to 0.08 mm. Comparative Example 1 sets the downward speed of the pressing bar 60 to 2 mm / sec when dividing both the division lines 203 parallel and perpendicular to the orientation flat 213. Comparative Example 1 sets the distance 400 from the lower end of the pressing bar 60 when dividing the division line 203 parallel to the orientation flat 213 to 1.1 mm and the distance 400 from the pressing bar 60 when dividing the division line 203 perpendicular to the orientation flat 213 to 1.4 mm.

[0103] Comparative Example 2 involved dividing the wafer 200 using a conventional method without performing the second division step 304 of Embodiment 1, setting the pressing distance 410 for dividing the division line 203 parallel to the orientation flat 213 to 0.12 mm, and the pressing distance 410 for dividing the division line 203 perpendicular to the orientation flat 213 to 0.12 mm. Comparative Example 2 also set the downward speed of the pressing bar 60 to 2 mm / sec when dividing both the division lines 203 parallel and perpendicular to the orientation flat 213. Comparative Example 2 also set the distance 400 from the lower end of the pressing bar 60 to 1.1 mm when dividing the division line 203 parallel to the orientation flat 213, and the distance 400 from the pressing bar 60 to 1.4 mm when dividing the division line 203 perpendicular to the orientation flat 213.

[0104] In Table 1, the division results show circles indicating that the ductile material layer 212 was successfully divided along all planned division lines 203, while triangles indicate that the ductile material layer 212 could not be divided along some of the planned division lines 203.

[0105] According to Table 1, in particular, in Comparative Example 1, the ductile material layer 212 could not be divided along some of the division lines 203 that were parallel to the orientation flat 213, and in Comparative Example 2, the ductile material layer 212 could not be divided along some of the division lines 203 that were perpendicular to the orientation flat 213.

[0106] According to Table 1, in Examples 1, 2, and 3, the ductile material layer 212 could be divided along all of the planned division lines 203, compared to Comparative Examples 1 and 2.

[0107] Therefore, as shown in Table 1, by making the pressing distance 411 of the second splitting step 304 greater than the pressing distance 410 of the first splitting step 303, and making the distance 401 of the second splitting step 304 less than half of the distance 400 of the first splitting step 303, or 0.56 mm or less, it is possible to split the ductile material layer 212 along the planned splitting line 203, thereby suppressing burrs generated when splitting the ductile material layer 212, and enabling stable splitting of the ductile material layer 212 without compromising quality.

[0108] It should be noted that the present invention is not limited to the embodiments described above. That is, it can be implemented with various modifications without departing from the core principles of the present invention. In the present invention, a concave processing groove may be formed on the wafer 200 from the surface 202 along the planned division line 203 as a division starting point 205. The processing groove is formed by cutting along the planned division line 203, or by irradiating the planned division line 203 with a laser beam of a wavelength that is absorbed by the wafer 200.

[0109] In the embodiments described above, an example is described in which the distance between the position on the wafer 200 pressed by the pressing bar 60 and the first planned division line is equal to the distances 400 and 401 in the X-axis direction between the lower end of the upper clamping member 52 and the lower end of the pressing bar 60. However, in the present invention, the distance between the position on the wafer 200 pressed by the pressing bar 60 and the first planned division line is not equal to the distances 400 and 401 in the X-axis direction between the lower end of the upper clamping member 52 and the lower end of the pressing bar 60. [Explanation of symbols]

[0110] 1. Braking device (split device) 44 Rectangular clamping member (clamping part) 52 Upper clamping member (clamping part) 60 Pressing bar (pressing member) 200 wafers 202 Surface 203 planned division lines 203-1, 203-2 Planned division line (First planned division line) 204 Devices (chip area) 204-1 Device (First Region, Second Region) 204-2 Device (Area 1) 205 Split starting point 206 Back side 207 seats 210 chips 211 Wafer Unit 212 Ductile material layer 214 Second area 301 Wafer Unit Fixing Process 302 Clamping process 303 1st division process 304 Second division process 400 Distance (Distance between the position pressed by the pressing member and the first planned division line) 401 Distance (the distance between the position pressed by the pressing member and the first planned division line) 410 Pressing distance 411 Pressing distance

Claims

1. A method for manufacturing a chip by dividing a wafer having a ductile material layer made of a ductile material on its back surface, with a division starting point formed along a division line that demarcates the chip region where the chip is formed, along the division line, A wafer unit fixing step for fixing the sheet of a wafer unit, which includes the wafer and a sheet attached to the back surface of the wafer, A clamping step in which a first region adjacent to the first division line, which is the division line of the wafer to be divided on the wafer unit fixed in the wafer unit, is clamped from the front and back sides of the wafer unit with a clamping portion, After performing the clamping step, a first division step is performed in which a second region adjacent to the first division line, on the opposite side of the clamping portion with respect to the first division line, is pressed with a pressing member from the surface side of the wafer along the division line, After performing the first division step, a second division step is performed in which the pressing member presses the wafer along the planned division line from the surface side at a position closer to the planned division line than the position pressed in the first division step in the second region, thereby dividing the wafer along the planned division line. A method for manufacturing chips, characterized by comprising:

2. In the second division process, the distance between the position on the wafer pressed by the pressing member and the first division line is: In the first division process, the distance between the position on the wafer pressed by the pressing member and the first planned division line is less than half. The method for manufacturing a chip according to claim 1.

3. In the second division process, the distance between the position on the wafer pressed by the pressing member and the first division line is 0.56 mm or less. The method for manufacturing a chip according to claim 1.

4. In the second splitting step, the pressing distance in the thickness direction of the wafer when the wafer is pressed by the pressing member is: In the first splitting step, the pressing distance in the thickness direction of the wafer when the wafer is pressed by the pressing member is greater than the pressing distance in the thickness direction of the wafer. A method for manufacturing a chip according to any one of claims 1 to 3.

5. In the first splitting process, bending stress is applied to the wafer, In the second splitting step, shear stress is applied to the ductile material layer of the wafer. A method for manufacturing a chip according to any one of claims 1 to 3.

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