Bias current circuit, overcurrent detection circuit, and semiconductor device

JP2026104210APending Publication Date: 2026-06-25FUJI ELECTRIC CO LTD

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
FUJI ELECTRIC CO LTD
Filing Date
2024-12-13
Publication Date
2026-06-25

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Abstract

The present invention provides a bias current circuit, an overcurrent detection circuit, and a semiconductor device that can reduce temperature dependence. [Solution] The bias current circuit 1 comprises a transistor 11 having a gate G, a transistor 12 having a gate G electrically connected to the gate G of transistor 11 and having a threshold voltage higher than the threshold voltage of transistor 11, and a resistive element 13 connected in series between transistor 11 and transistor 12.
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