Bias current circuit, overcurrent detection circuit, and semiconductor device
JP2026104210APending Publication Date: 2026-06-25FUJI ELECTRIC CO LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- FUJI ELECTRIC CO LTD
- Filing Date
- 2024-12-13
- Publication Date
- 2026-06-25
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Figure 2026104210000001_ABST
Abstract
The present invention provides a bias current circuit, an overcurrent detection circuit, and a semiconductor device that can reduce temperature dependence. [Solution] The bias current circuit 1 comprises a transistor 11 having a gate G, a transistor 12 having a gate G electrically connected to the gate G of transistor 11 and having a threshold voltage higher than the threshold voltage of transistor 11, and a resistive element 13 connected in series between transistor 11 and transistor 12.
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