Bias current circuit, overcurrent detection circuit, and semiconductor device

JP2026104210APending Publication Date: 2026-06-25FUJI ELECTRIC CO LTD
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Patent Information

Application Number
JP2024218840
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-12-13
Publication Date
2026-06-25

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Abstract

The present invention provides a bias current circuit, an overcurrent detection circuit, and a semiconductor device that can reduce temperature dependence. [Solution] The bias current circuit 1 comprises a transistor 11 having a gate G, a transistor 12 having a gate G electrically connected to the gate G of transistor 11 and having a threshold voltage higher than the threshold voltage of transistor 11, and a resistive element 13 connected in series between transistor 11 and transistor 12.
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Citation Information

Patent Citations

  • Overcurrent detection circuit, dc-dc converter and overcurrent detection method

    JP2008234015A

  • Overheat protection circuit and power supply integrated circuit

    JP2011024405A

  • Overcurrent detection circuit, semiconductor device, and power supply device

    JP2018102023A