Nitride semiconductor light-emitting element

By optimizing the layer thickness and composition of Al-containing layers in nitride semiconductor light-emitting devices, the forward voltage is reduced, and electrostatic discharge resistance is improved, addressing the high voltage issue in ultraviolet-emitting devices with tunnel junctions.

JP2026109551APending Publication Date: 2026-07-01NICHIA CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
NICHIA CORP
Filing Date
2025-11-12
Publication Date
2026-07-01

AI Technical Summary

Technical Problem

Nitride semiconductor light-emitting devices with multiple ultraviolet-emitting semiconductor parts connected via a tunnel junction face high forward voltage due to the absorption of ultraviolet light in GaN layers and increased activation energy of p-type impurities in Al-containing nitride semiconductor layers, leading to reduced hole density and high resistance.

Method used

The device employs a configuration where the first p-side semiconductor layer includes a thin Al-containing layer with a specific thickness and Al composition ratio, and the second p-side semiconductor layer includes a thicker Al-containing layer with a lower Al composition ratio, optimizing the layer thickness and composition to reduce the forward voltage and embed V-pits, thereby improving electrostatic discharge resistance.

Benefits of technology

This configuration results in a nitride semiconductor light-emitting element with reduced forward voltage and improved electrostatic discharge resistance, effectively suppressing the increase in forward voltage while maintaining efficient ultraviolet light emission.

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Abstract

The present invention provides a nitride semiconductor light-emitting element that can lower the forward voltage in a light-emitting element formed by tunnel junction of multiple semiconductor parts that emit ultraviolet light. [Solution] A light-emitting element comprising: a first semiconductor part having a first n-side semiconductor layer, a first active layer disposed on the first n-side semiconductor layer and emitting ultraviolet light, and a first p-side semiconductor layer disposed on the first active layer; and a second semiconductor part having a second n-side semiconductor layer disposed on the first semiconductor part, a second active layer disposed on the second n-side semiconductor layer and emitting ultraviolet light, and a second p-side semiconductor layer disposed on the second active layer, wherein the first p-side semiconductor layer comprises a first layer containing Al and a second layer disposed on the first layer and containing Al and p-type impurities; the second p-side semiconductor layer comprises a third layer containing Al and a fourth layer disposed on the third layer and containing Al and p-type impurities; the second n-side semiconductor layer is tunnel-junctioned with the second layer; and the thickness of the first layer is thinner than the thickness of the third layer.
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