Etching method and etching apparatus

The etching method addresses the challenge of inconsistent etching distribution by controlling gas flow and sequence, resulting in uniform etching across substrates, improving process consistency.

JP2026110122APending Publication Date: 2026-07-02TOKYO ELECTRON LTD
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Patent Information

Application Number
JP2024225391
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-12-20
Publication Date
2026-07-02

AI Technical Summary

Technical Problem

Existing etching methods struggle to adjust the distribution of the etching amount uniformly across the substrate surface, leading to inconsistencies in etching shapes among multiple substrates.

Method used

An etching method that supplies a basic gas without a halogen-containing gas first, followed by a halogen-containing gas and basic gas, allowing for controlled distribution of the etching amount by adjusting gas flow rates and timing, ensuring uniform etching across substrates.

Benefits of technology

The method achieves consistent etching distribution and shape across multiple substrates, enhancing the uniformity and reproducibility of etching processes.

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Abstract

This technology provides a way to adjust the distribution of etching amounts within the substrate surface. [Solution] An etching method according to one aspect of the present disclosure comprises preparing a substrate having a first film on its surface, and etching the first film, wherein the etching includes supplying a first gas containing a basic gas but not a halogen-containing gas from the radially outside of the substrate toward the substrate, and, after supplying the first gas, supplying a second gas containing the halogen-containing gas and the basic gas toward the substrate from the radially outside of the substrate.
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Citation Information

Patent Citations

  • Deposition method and deposition apparatus

    JP2012199306A