Etching method and etching apparatus
The etching method addresses the challenge of inconsistent etching distribution by controlling gas flow and sequence, resulting in uniform etching across substrates, improving process consistency.
JP2026110122APending Publication Date: 2026-07-02TOKYO ELECTRON LTD
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- TOKYO ELECTRON LTD
- Filing Date
- 2024-12-20
- Publication Date
- 2026-07-02
AI Technical Summary
Technical Problem
Existing etching methods struggle to adjust the distribution of the etching amount uniformly across the substrate surface, leading to inconsistencies in etching shapes among multiple substrates.
Method used
An etching method that supplies a basic gas without a halogen-containing gas first, followed by a halogen-containing gas and basic gas, allowing for controlled distribution of the etching amount by adjusting gas flow rates and timing, ensuring uniform etching across substrates.
Benefits of technology
The method achieves consistent etching distribution and shape across multiple substrates, enhancing the uniformity and reproducibility of etching processes.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure 2026110122000001_ABST
Abstract
This technology provides a way to adjust the distribution of etching amounts within the substrate surface. [Solution] An etching method according to one aspect of the present disclosure comprises preparing a substrate having a first film on its surface, and etching the first film, wherein the etching includes supplying a first gas containing a basic gas but not a halogen-containing gas from the radially outside of the substrate toward the substrate, and, after supplying the first gas, supplying a second gas containing the halogen-containing gas and the basic gas toward the substrate from the radially outside of the substrate.
Need to check novelty before this filing date? Find Prior Art