Laser chamber apparatus, laser apparatus, and method for manufacturing electronic devices

Abstract

This prevents discharge products from adhering to the window. [Solution] The laser chamber device comprises a chamber 10 in which a pair of discharge electrodes 11a and 11b are arranged inside, a first optical path tube 12a communicating with the chamber, a window 10a through which light enters from the region between the discharge electrodes via the inside of the first optical path tube, a resonance chamber 16a, and a nozzle tube 17a connecting the inside of the first optical path tube and the resonance chamber.

Description

[Technical Field]

[0001] This disclosure relates to a laser chamber apparatus, a laser apparatus, and a method for manufacturing electronic devices. [Background technology]

[0002] In recent years, semiconductor lithography equipment has been required to improve resolution as semiconductor integrated circuits become smaller and more integrated. Therefore, efforts are being made to shorten the wavelength of light emitted from lithography light sources. For example, gas laser equipment used for lithography includes KrF excimer laser equipment that outputs laser light with a wavelength of approximately 248 nm, and ArF excimer laser equipment that outputs laser light with a wavelength of approximately 193 nm.

[0003] Furthermore, the excimer laser light output from KrF and ArF excimer laser devices has a pulse width of several tens of nanoseconds and short wavelengths of approximately 248 nm and 193 nm, respectively, and is sometimes used for direct processing of polymer materials and glass materials. Chemical bonds in polymer materials can be broken by excimer laser light, which has a photon energy higher than the bond energy. Therefore, it is known that non-heating processing of polymer materials is possible with excimer laser light, and the processed shape becomes clean. In addition, since glass and ceramics have a high absorption rate for excimer laser light, it is known that materials that are difficult to process with visible and infrared laser light can be processed with excimer laser light. [Prior art documents] [Patent Documents]

[0004] [Patent Document 1] Summary of U.S. Patent No. 5027366

[0005] A laser chamber apparatus according to one aspect of the present disclosure comprises a chamber in which a pair of discharge electrodes are disposed inside; a first optical path tube communicating with the chamber; a window through which light is incident from a region between the discharge electrodes via the inside of the first optical path tube; a resonance chamber; and a nozzle tube connecting the inside of the first optical path tube and the resonance chamber.

[0006] A method for manufacturing an electronic device according to one aspect of the present disclosure includes generating laser light with a laser device comprising: an optical resonator; a chamber in which a pair of discharge electrodes are disposed inside; a first optical path tube communicating with the chamber; a window located in the optical path of the optical resonator through which light enters from a region between the discharge electrodes via the inside of the first optical path tube; a resonance chamber; and a nozzle tube connecting the inside of the first optical path tube and the resonance chamber; fabricating an interposer by laser processing an interposer substrate with the laser light; coupling the interposer and an integrated circuit chip to electrically connect them to each other; and coupling the interposer and a circuit board to electrically connect them to each other. [Brief explanation of the drawing]

[0007] Some embodiments of this disclosure are described below, merely as examples, with reference to the accompanying drawings. [Figure 1] Figure 1 shows the configuration of the laser processing system in the comparative example. [Figure 2] Figure 2 is a graph showing the simulation results of the magnitude of sound pressure of acoustic waves near the window, with and without a baffle. [Figure 3] Figure 3 shows the configuration of the laser processing system in the first embodiment. [Figure 4] Figure 4 shows the parameters that determine the Helmholtz resonance frequency. [Figure 5] Figure 5 is a graph showing the simulation results of the magnitude of the sound pressure of acoustic waves near the window, with and without a Helmholtz resonator. [Figure 6] Figure 6 shows the configuration of the Helmholtz resonator in the second embodiment. [Figure 7] Figure 7 is a cross-sectional view taken along line VII-VII of Figure 6. [Figure 8] Figure 8 shows the configuration of the Helmholtz resonator in the third embodiment. [Figure 9] Figure 9 shows a first configuration example of the Helmholtz resonator in the fourth embodiment. [Figure 10] Figure 10 shows a second configuration example of the Helmholtz resonator in the fourth embodiment. [Figure 11] Figure 11 shows the configuration of the Helmholtz resonator in the fifth embodiment. [Figure 12] Figure 12 shows a first specific configuration of the Helmholtz resonator in the fifth embodiment. [Figure 13] Figure 13 shows a state where the second optical path tube and the second unit are cut along a plane perpendicular to the optical propagation direction in the first specific configuration. [Figure 14] Figure 14 shows a second specific configuration of the Helmholtz resonator in the fifth embodiment. [Figure 15] Figure 15 shows a state where the second optical path tube and the second unit are cut along a plane perpendicular to the optical propagation direction in the second specific configuration. [Figure 16] Figure 16 shows a third specific configuration of the Helmholtz resonator in the fifth embodiment. [Figure 17] Figure 17 shows a state where the second optical path tube and the second unit are cut along a plane perpendicular to the optical propagation direction in the third specific configuration. [Figure 18] Figure 18 shows a fourth specific configuration of the Helmholtz resonator in the fifth embodiment. [Figure 19] Figure 19 shows a state where the second optical path tube and the second unit are cut along a plane perpendicular to the optical propagation direction in the fourth specific configuration. [Figure 20] Figure 20 schematically shows the configuration of an electronic device. [Figure 21] Figure 21 is a flowchart showing a method for manufacturing an electronic device. Embodiment

[0008] <Content> 1. Comparative Example 1.1 Laser Processing System 1.2 Operation 1.3 Problems of the Comparative Example 2. Laser Chamber Device in Which Resonance Chambers 16a and 16b are Connected to First Optical Path Tubes 12a and 12b, Respectively 2.1 Structure 2.2 Helmholtz Resonance Frequency f 2.3 Function 3. Laser Chamber Device in Which First Unit 13c is Arranged in Second Optical Path Tube 20 3.1 Structure 3.2 Function 4. Laser Chamber Device in Which a Plurality of First Units 13c to 13e are Arranged in Second Optical Path Tube 20 4.1 Structure 4.2 Function 5. Laser Chamber Device in Which Second Optical Path Tube 20 Defines Resonance Chamber 16f 5.1 Structure 5.2 Function 6. Laser Chamber Device in Which Volume V of Resonance Chamber 16h is Fixed 6.1 Structure 6.2 Function 7. Others 7.1 Electronic Device Including Interposer IP 7.2 Supplementary

[0009] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments described below show some examples of the present disclosure and do not limit the content of the present disclosure. Also, not all of the configurations and operations described in each embodiment are essential as the configurations and operations of the present disclosure. In addition, the same reference numerals are assigned to the same components, and redundant descriptions are omitted.

[0010] 1. Comparative Example 1.1 Laser Processing System Figure 1 shows the configuration of a laser processing system in a comparative example. The comparative example in this disclosure is a form that the applicant recognizes as being known only to the applicant, and is not a known example acknowledged by the applicant. The laser processing system includes a laser device 1 and a laser processing device 5.

[0011] Laser device 1 is a discharge-excited gas laser device capable of outputting laser light LB to laser processing device 5. Laser processing device 5 may be a semiconductor exposure device, or a processing device for polymer materials, glass materials, etc.

[0012] The laser apparatus 1 includes a chamber 10, windows 10a and 10b, first optical path tubes 12a and 12b, a rear mirror 14, and an output coupling mirror 15. A pair of discharge electrodes 11a and 11b are arranged inside the chamber 10. A pulse power supply (not shown) is connected to the discharge electrodes 11a and 11b. The chamber 10 is in communication with the first optical path tubes 12a and 12b, and the windows 10a and 10b are supported by the first optical path tubes 12a and 12b, respectively. The first optical path tubes 12a and 12b may each consist of holders for the windows 10a and 10b.

[0013] The rear mirror 14 is composed of a high-reflection mirror, and the output coupling mirror 15 is composed of a partial-reflection mirror. The rear mirror 14 and the output coupling mirror 15 constitute an optical resonator. A narrowband module including a wavelength-selective element may be used instead of the rear mirror 14. The chamber 10 is positioned such that windows 10a and 10b are located in the optical path of the optical resonator.

[0014] The direction of propagation of the laser beam LB output from the output coupling mirror 15 is defined as the Z direction. Each of the discharge electrodes 11a and 11b extends in the Z direction. The direction in which the discharge electrodes 11a and 11b face each other is defined as the Y direction or -Y direction. The Z direction and the Y direction are perpendicular to each other, and the direction perpendicular to both of these is defined as the X direction or -X direction. Figure 1 shows the configuration of the laser device 1 as seen in the X direction.

[0015] Chamber 10 is filled with a laser gas containing, for example, argon or krypton as a rare gas, fluorine as a halogen gas, and neon as a buffer gas. Alternatively, a laser gas containing fluorine and a buffer gas may be filled in.

[0016] 1.2 Operation When a pulsed power supply applies a high voltage between the discharge electrodes 11a and 11b, a discharge occurs between the discharge electrodes 11a and 11b. The energy of this discharge excites the laser medium in the chamber 10, causing it to transition to a higher energy level. When the excited laser medium subsequently transitions to a lower energy level, it emits light with a wavelength corresponding to the energy level difference.

[0017] Light generated in the discharge space between discharge electrodes 11a and 11b enters windows 10a and 10b via the inside of the first optical path tubes 12a and 12b and passes through windows 10a and 10b. The rear mirror 14 reflects the light emitted from window 10a with high reflectivity and returns it to chamber 10. The output coupling mirror 15 transmits a portion of the light emitted from window 10b and outputs it, while reflecting the other portion back into chamber 10.

[0018] In this way, the light generated in the discharge space travels back and forth between the rear mirror 14 and the output coupling mirror 15. This light is amplified each time it passes through the discharge space. The laser-oscillated and amplified light is then output from the output coupling mirror 15 as laser light LB and incident on the laser processing device 5.

[0019] 1.3 Challenges of the Comparative Example The discharge between the discharge electrodes 11a and 11b causes chemical reactions between components of the laser gas and components of the discharge electrodes 11a and 11b, generating discharge products. These discharge products may adhere to windows 10a and 10b, potentially causing the following problems. (a) The transmittance of windows 10a and 10b may decrease, and the pulse energy of the laser beam LB may decrease. (b) Discharge products attached to windows 10a and 10b absorb the energy of the light. This causes the temperature of windows 10a and 10b to rise, resulting in distortion and a change in the angle of incidence of the light, which may alter the polarization degree and transmittance of the laser beam LB. Alternatively, windows 10a and 10b may be damaged.

[0020] To prevent discharge products from adhering to windows 10a and 10b, the following measures have been considered. (c) The laser gas in the chamber 10 is circulated to prevent the laser gas containing a large amount of discharge products from accumulating in specific locations within the chamber 10. (d) The laser gas in the chamber 10 is replaced, and the laser gas containing a large amount of discharge products is discharged to the outside of the chamber 10.

[0021] The following measures are taken in U.S. Patent No. 5027366: (e) Baffles 12c and 12d, which are plate-shaped components with an opening in the center, are provided in the first optical path tubes 12a and 12b between the chamber 10 and the windows 10a and 10b, respectively. This reduces the force of dust-like discharge products scattered from the discharge space between the discharge electrodes 11a and 11b. (f) Purge gas is flowed near windows 10a and 10b to suppress the discharge products from reaching windows 10a and 10b.

[0022] While the measures described in (c) to (f) above can suppress the adhesion of discharge products to windows 10a and 10b, their effectiveness may be insufficient in some cases. It has not been previously clarified what other measures are effective besides those described in (c) to (f), nor has a clear method for quantitatively evaluating the effectiveness of various measures.

[0023] The applicant has found that the smaller the sound pressure P near windows 10a and 10b of the acoustic wave generated in the discharge space between discharge electrodes 11a and 11b, the less discharge product is carried to the vicinity of window 10a or 10b along with the acoustic wave and adheres to window 10a or 10b, and the greater the effect of the baffles 12c and 12d in suppressing the adhesion of discharge product.

[0024] Figure 2 is a graph showing the simulation results of the magnitude of the sound pressure P of the acoustic wave near windows 10a and 10b, with and without baffles 12c and 12d (WOB) and with baffles 12c and 12d (WB). The horizontal axis represents the repetition frequency f of the laser beam LB. L This shows the repetition frequency f. L This corresponds to the repetition frequency of the pulsed discharge between the discharge electrodes 11a and 11b. As shown in Figure 2, the sound pressure reduction effect of baffles 12c and 12d is at the repetition frequency f L It depends.

[0025] The repetition frequency f of the laser beam LB for output to processing equipment for polymer materials, glass materials, etc. L In the region below 1 kHz, the sound pressure reduction effect of baffles 12c and 12d is considered to be small, and measures other than providing baffles 12c and 12d are desirable. On the other hand, the repetition frequency f of the laser beam LB output to the semiconductor exposure apparatus L In the region above 4kHz, a sound pressure reduction effect can be expected from baffles 12c and 12d. However, even with baffles 12c and 12d installed, the sound pressure P remains high, and further countermeasures are desired. However, the specific values ​​may differ depending on the specific shapes of baffles 12c and 12d and chamber 10.

[0026] Each embodiment described below uses a laser beam LB with a repetition frequency f L Accordingly, this relates to reducing the sound pressure P near windows 10a and 10b and obtaining an effect of suppressing the adhesion of discharge products.

[0027] 2. Laser chamber device in which resonance chambers 16a and 16b are connected to the first optical path tubes 12a and 12b, respectively. 2.1 Configuration Figure 3 shows the configuration of the laser processing system in the first embodiment. In the first embodiment, the laser device 1a included in the laser processing system has resonant chambers 16a and 16b connected to the first optical path tubes 12a and 12b, respectively, instead of baffles 12c and 12d. The first optical path tubes 12a and 12b are in communication with the resonant chambers 16a and 16b via nozzle tubes 17a and 17b, respectively. The resonant chamber 16a and nozzle tube 17a, and the resonant chamber 16b and nozzle tube 17b, each act as a Helmholtz resonator.

[0028] The laser chamber apparatus of this disclosure comprises a chamber 10, first optical path tubes 12a and 12b, windows 10a and 10b, resonance chambers 16a and 16b, and nozzle tubes 17a and 17b. The laser chamber apparatus is not limited to use in a laser oscillator, but may also be used in a laser amplifier.

[0029] 2.2 Helmholtz resonance frequency f Figure 4 shows the parameters that determine the Helmholtz resonance frequency f. Using the volume V of the resonance chamber 16b, the length L of the nozzle tube 17b, the cross-sectional area S of the nozzle tube 17b, and the speed of sound c, the Helmholtz resonance frequency f is expressed by the following formula. f=(c / 2π)(S / VL) 1 / 2 The same applies to the resonance chamber 16a and the nozzle tube 17a.

[0030] A Helmholtz resonator is connected to the first optical path tubes 12a and 12b, and the Helmholtz resonance frequency f is set to the repetition frequency f of the laser beam LB. L By matching this, it is possible to suppress the adhesion of discharge products to windows 10a and 10b.

[0031] FIG. 5 is a graph showing the results of simulating the magnitude of the sound pressure P of the acoustic wave in the vicinity of the windows 10a and 10b when the Helmholtz resonator is not provided (WOR) and when it is provided (WR). The horizontal axis represents the repetition frequency f of the laser beam LB L is shown. The volume V of each of the resonance chambers 16a and 16b, the length L and the cross-sectional area S of each of the nozzle tubes 17a and 17b are set so that the Helmholtz resonance frequency f is 500 Hz.

[0032] As shown in FIG. 5, in the region where the repetition frequency f L is greater than 450 Hz and less than 550 Hz, an excellent sound pressure reduction effect is obtained. Even when the Helmholtz resonance frequency f is set to other values, it is considered that an excellent sound pressure reduction effect can be obtained within a width of about 100 Hz. Therefore, the volume V of each of the resonance chambers 16a and 16b, the length L and the cross-sectional area S of each of the nozzle tubes 17a and 17b are set so that the Helmholtz resonance frequency f is greater than the value obtained by subtracting 50 Hz from the repetition frequency f L and less than the value obtained by adding 50 Hz to the repetition frequency f L This can suppress the attachment of the discharge products to the windows 10a and 10b.

[0033] 2.3 Operation (1) According to the first embodiment, the laser chamber device includes a chamber 10 in which a pair of discharge electrodes 11a and 11b are disposed inside, a first optical path tube 12a or 12b communicating with the chamber 10, a window 10a or 10b, a resonance chamber 16a or 16b, and a nozzle tube 17a or 17b. Light enters the window 10a or 10b from the region between the discharge electrodes 11a and 11b through the inside of the first optical path tube 12a or 12b. The nozzle tube 17a or 17b communicates the inside of the first optical path tube 12a or 12b with the resonance chamber 16a or 16b.

[0034] According to this, the acoustic wave reaching the window 10a or 10b is reduced, and the window 10a or 10b can have a longer life.

[0035] (2) According to the first embodiment, the Helmholtz resonance frequency f of the resonance chamber 16a or 16b and the nozzle tube 17a or 17b is equal to the repetition frequency f of the laser light LB. L The repetition frequency f is greater than the value obtained by subtracting 50Hz from it. L It is smaller than the value obtained by adding 50Hz to it.

[0036] According to this, a significant acoustic wave reduction effect can be obtained within a range of ±50 Hz relative to the Helmholtz resonance frequency f.

[0037] In other respects, the first embodiment may be the same as the comparative example.

[0038] 3. Laser chamber device in which the first unit 13c is placed inside the second optical path tube 20. 3.1 Configuration Figure 6 shows the configuration of a Helmholtz resonator in the second embodiment. Figure 7 is a cross-sectional view taken along line VII-VII in Figure 6. In the second embodiment, the first optical path tube 10c, the resonance chamber 16c, and the nozzle tube 17c are housed in a second optical path tube 20. The configuration of the second optical path tube 20 may be the same as that of either the first optical path tubes 12a and 12b in the first embodiment, and it holds either the window 10a or 10b. The second optical path tube 20 may be provided with a flange 24 for fixing the second optical path tube 20 in communication with the chamber 10. The second optical path tube 20 may consist of a holder for the window 10a or 10b.

[0039] The resonance chamber 16c is a space enclosed by the first optical path tube 10c, the tube wall 22c, and the first and second partition walls 19c and 21c. The resonance chamber 16c is arranged to surround the first optical path tube 10c. The first optical path tube 10c forms part of the optical path of light that travels back and forth in the optical resonator. The inner surface of the first optical path tube 10c has a rectangular cross-section perpendicular to the direction of light passage. The nozzle tube 17c is positioned to protrude from the tube wall of the first optical path tube 10c toward the inside of the resonance chamber 16c. The first optical path tube 10c, the resonance chamber 16c, and the nozzle tube 17c are integrally configured as a first unit 13c, and the first unit 13c is fitted into the second optical path tube 20.

[0040] 3.2 Effect (3) According to the second embodiment, the laser chamber apparatus includes a second optical path tube 20. The second optical path tube 20 houses the first optical path tube 10c, the resonance chamber 16c, and the nozzle tube 17c, communicates with the chamber 10, and holds the window 10a or 10b.

[0041] According to this, by housing the resonance chamber 16c, etc., in the second optical path tube 20, acoustic waves can be reduced in a compact configuration.

[0042] (4) According to the second embodiment, the resonance chamber 16c is arranged to surround the first optical path tube 10c.

[0043] According to this, by positioning the first optical path tube 10c near the center of the second optical path tube 20 through which light emitted from the discharge space between the discharge electrodes 11a and 11b toward the window 10a or 10b passes, and arranging the resonance chamber 16c around it, the space inside the second optical path tube 20 can be effectively utilized.

[0044] (5) According to the second embodiment, the inner surface of the first optical path tube 10c has a rectangular cross-sectional shape perpendicular to the Z direction, which is the direction of light passage.

[0045] According to this, by matching the cross-sectional shape of the first optical path tube 10c to the cross-sectional shape of the light emitted from the discharge space between the discharge electrodes 11a and 11b toward the windows 10a and 10b, the space inside the second optical path tube 20 can be effectively utilized.

[0046] (6) According to the second embodiment, the nozzle tube 17c protrudes from the tube wall of the first optical path tube 10c toward the inside of the resonance chamber 16c.

[0047] According to this, it is possible to suppress the obstruction of the nozzle tube 17c from the passage of light emitted from the discharge space between the discharge electrodes 11a and 11b toward the windows 10a and 10b.

[0048] (7) According to the second embodiment, the first optical path tube 10c, the resonance chamber 16c, and the nozzle tube 17c are integrally configured as the first unit 13c.

[0049] According to this, by making it a unit, it can be installed or replaced as a single unit.

[0050] In other respects, the second embodiment may be the same as the first embodiment.

[0051] 4. Laser chamber device in which multiple first units 13c to 13e are arranged inside the second optical path tube 20. 4.1 Configuration Figure 8 shows the configuration of a Helmholtz resonator in a third embodiment. In the third embodiment, a plurality of first units 13c, 13d, and 13e are housed in the second optical path tube 20. The first units 13c, 13d, and 13e are arranged in line in the direction of light passage. Each of the first units 13d and 13e may be the same as the first unit 13c, and the reference numerals for each component of the first units 13c, 13d, and 13e may be omitted.

[0052] It is desirable that the first units 13c, 13d, and 13e have different Helmholtz resonance frequencies f. In order to configure them to have different Helmholtz resonance frequencies f, the respective resonance chambers 16c, 16d, and 16e of the first units 13c, 13d, and 13e may have different volumes V. Alternatively, the nozzle tubes 17c, 17d, and 17e may have different lengths L, different inner diameters, and different cross-sectional areas S.

[0053] 4.2 Effect (8) According to the third embodiment, a plurality of first units 13c to 13e are housed in the second optical path tube 20. The resonance chamber 16c and nozzle tube 17c, the resonance chamber 16d and nozzle tube 17d, and the resonance chamber 16e and nozzle tube 17e are configured such that the first units 13c to 13e have different Helmholtz resonance frequencies f.

[0054] According to this, by equipping Helmholtz resonators having different Helmholtz resonance frequencies f, the repetition frequency f of the laser light LB can be controlled. L It can also handle changes.

[0055] (9) According to the third embodiment, the first units 13c to 13e include resonant chambers 16c to 16e with different volumes V.

[0056] According to this, by having different volumes V in the resonance chambers 16c to 16e, multiple Helmholtz resonance frequencies f can be achieved.

[0057] (10) According to the third embodiment, the first units 13c to 13e include nozzle tubes 17c to 17e of different lengths L.

[0058] According to this, multiple Helmholtz resonance frequencies f can be achieved by varying the lengths L of the nozzle tubes 17c to 17e. Increasing the length L of the nozzle tubes 17c to 17e is more effective in suppressing the overall increase in volume of the first unit 13c to 13e than increasing the volume V of the resonance chambers 16c to 16e.

[0059] (11) According to the third embodiment, the first units 13c to 13e include nozzle tubes 17c to 17e with different inner diameters.

[0060] According to this, multiple Helmholtz resonance frequencies f can be achieved by having different inner diameters for the nozzle tubes 17c to 17e. Rather than increasing the volume V of the resonance chambers 16c to 16e or the length L of the nozzle tubes 17c to 17e, the overall volume of the first unit 13c to 13e can be suppressed by reducing the inner diameter of the nozzle tubes 17c to 17e.

[0061] (12) According to the third embodiment, the first units 13c to 13e are housed in the second optical path tube 20, and the first units 13c to 13e are arranged in the Z direction, which is the direction of light passage.

[0062] According to this, the external shapes of the first units 13c to 13e can be standardized to match the shape of the second optical path tube 20.

[0063] In other respects, the third embodiment may be the same as the second embodiment.

[0064] 5. Laser chamber apparatus in which the second optical path tube 20 defines the resonance chamber 16f. 5.1 Configuration Figure 9 shows a first configuration example of a Helmholtz resonator in the fourth embodiment. In the fourth embodiment, the resonant chamber 16f is a space enclosed by the first optical path tube 10f, the second optical path tube 20, and the first and second partitions 19f and 21f. The first and second partitions 19f and 21f are partitions that close the gap between the outside of the first optical path tube 10f and the inside of the second optical path tube 20 at different positions in the direction of light passage.

[0065] The first optical path tube 10f, the second partition wall 21f, and the nozzle tube 17f are integrally configured as a second unit 23f, and the second unit 23f is fitted into the second optical path tube 20. The first optical path tube 10f penetrates the first partition wall 19f parallel to the direction of light passage. By moving the first optical path tube 10f and the second partition wall 21f parallel to the direction of light passage relative to the first partition wall 19f, the distance between the first partition wall 19f and the second partition wall 21f can be increased or decreased, and the volume V of the resonance chamber 16f can be changed.

[0066] The space between the second partition wall 21f and the second optical path tube 20, and the space between the first partition wall 19f and the first optical path tube 10f may be sealed with an O-ring or gasket (not shown).

[0067] Figure 10 shows a second configuration example of a Helmholtz resonator in the fourth embodiment. In the fourth embodiment, a plurality of second units 23f and 23g may be housed in the second optical path tube 20. The second units 23f and 23g are arranged in line in the direction of light passage. The second unit 23g may be the same as the second unit 23f, and the reference numerals for each component of the second units 23f and 23g may be omitted.

[0068] The resonance chamber 16g is the space enclosed by the second optical path tube 20 and the second units 23f and 23g. The volume V of the resonance chamber 16g is fixed by the contact of the second unit 23g with the second unit 23f.

[0069] 5.2 Effect (13) According to the fourth embodiment, the resonance chamber 16f is a space enclosed by the first optical path tube 10f, the second optical path tube 20, and the first and second partitions 19f and 21f. The first and second partitions 19f and 21f close the gap between the outside of the first optical path tube 10f and the inside of the second optical path tube 20 at different positions in the Z direction, which is the direction of light passage.

[0070] According to this, by using the second optical path tube 20 as part of the wall surrounding the resonance chamber 16f, the volume of the resonance chamber 16f can be made larger than that of the first unit 13c in the second and third embodiments.

[0071] (14) According to the fourth embodiment, the first optical path tube 10f penetrates the first partition wall 19f parallel to the Z direction, which is the direction of light passage. By moving the first optical path tube 10f and the second partition wall 21f parallel to the Z direction relative to the first partition wall 19f, the distance between the first partition wall 19f and the second partition wall 21f can be increased or decreased.

[0072] According to this, the volume V of the resonance chamber 16f can be changed without replacing the first optical path tube 10f or the first and second partitions 19f and 21f. For example, the Helmholtz resonance frequency f can be changed depending on operating conditions such as laser processing, adjustment oscillation, and passivation.

[0073] (15) According to the fourth embodiment, the first optical path tube 10f, the second partition wall 21f, and the nozzle tube 17f are integrally configured as the second unit 23f.

[0074] According to this, by making it a unit, it can be installed or replaced as a single unit.

[0075] (16) According to the fourth embodiment, the second optical path tube 20 houses the second units 23f and 23g, and the second units 23f and 23g are arranged side by side in the Z direction, which is the direction of light passage.

[0076] According to this, the external shapes of the second units 23f and 23g can be standardized to match the shape of the second optical path tube 20.

[0077] In other respects, the fourth embodiment may be the same as the second or third embodiment.

[0078] 6. Laser chamber apparatus with a fixed volume V of the resonance chamber 16h. 6.1 Configuration Figure 11 shows the configuration of a Helmholtz resonator in the fifth embodiment. In the fifth embodiment, a plurality of second units 23h and 23g are housed in the second optical path tube 20. The second unit 23h, including the nozzle tube 17h, does not penetrate the first partition wall 19h but abuts against the first partition wall 19h, thereby fixing the volume V of the resonance chamber 16h.

[0079] It is desirable that the second units 23h and 23g have different Helmholtz resonance frequencies f. In order to configure them to have different Helmholtz resonance frequencies f, the respective resonance chambers 16h and 16g of the second units 23h and 23g may have different volumes V. Alternatively, the nozzle tubes 17h and 17g may have different lengths L, different inner diameters, and different cross-sectional areas S.

[0080] Figure 12 shows the first specific configuration of the Helmholtz resonator in the fifth embodiment. Figure 13 shows the second optical path tube 20 and the second unit 23g in the first specific configuration when cut in a plane perpendicular to the direction of light propagation. The second unit 23h, which includes the first optical path tube 10h and the second partition wall 21h, and the second unit 23g, which includes the first optical path tube 10g and the second partition wall 21g, are inserted into the second optical path tube 20, which has the first partition wall 19h, thereby forming the resonant chambers 16h and 16g shown in Figure 11. The second partition wall 21h also serves as the first partition wall that defines the resonant chamber 16g. In the first specific configuration, the second units 23h and 23g constitute two resonators.

[0081] Figure 14 shows a second specific configuration of the Helmholtz resonator in the fifth embodiment. Figure 15 shows the second optical path tube 20 and the second unit 23j in the second specific configuration when cut in a plane perpendicular to the direction of light propagation. The second optical path tube 20, on which the first partition wall 19i is located, is fitted with the second unit 23i, which includes the first optical path tube 10i and the second partition wall 21i, and the second unit 23j, which includes the first optical path tube 10j and the second partition wall 21j. The second partition wall 21i also serves as the first partition wall that defines the resonance chamber 16j.

[0082] The second unit 23j includes the first optical path tube 10j, the second optical path tube 20, the second partition wall 21i which also serves as the first partition wall, and partitions 25j and 26j which divide the space enclosed by the second partition wall 21j into multiple rooms. The nozzle tube 17j is configured to connect the inside of the first optical path tube 10j with each of the multiple rooms. The second unit 23i is configured similarly. In the second specific configuration, the resonance chambers composed of the second units 23i and 23j are divided into two rooms, forming a total of four rooms.

[0083] Figure 16 shows a third specific configuration of the Helmholtz resonator in the fifth embodiment. Figure 17 shows the second optical path tube 20 and the second unit 23h cut in a plane perpendicular to the direction of light propagation in the third specific configuration. The second unit 23h is inserted into the second optical path tube 20 in which the first partition wall 19h is located. In the third specific configuration, one resonator is formed by the second unit 23h.

[0084] Figure 18 shows a fourth specific configuration of the Helmholtz resonator in the fifth embodiment. Figure 19 shows the second optical path tube 20 and the second unit 23j in the fourth specific configuration when cut in a plane perpendicular to the direction of light propagation. The second unit 23j is inserted into the second optical path tube 20 in which the first partition wall 19j is located. In the fourth specific configuration, the resonance chamber composed of the second unit 23j is divided into two chambers.

[0085] 6.2 Effect (17) According to the fifth embodiment, a plurality of second units 23h and 23g are housed in the second optical path tube 20. The resonance chamber 16h and nozzle tube 17h and the resonance chamber 16g and nozzle tube 17g are configured such that the second units 23h and 23g have different Helmholtz resonance frequencies f.

[0086] According to this, by equipping Helmholtz resonators having different Helmholtz resonance frequencies f, the repetition frequency f of the laser light LB can be controlled.L It can also handle changes.

[0087] (18) According to the second specific configuration of the fifth embodiment, the second unit 23j includes partitions 25j and 26j. The partitions 25j and 26j divide the space enclosed by the first optical path tube 10j, the second optical path tube 20, the second partition wall 21i which also serves as the first partition wall, and the second partition wall 21j into a plurality of rooms. The nozzle tube 17j is configured to connect the inside of the first optical path tube 10j with each of the plurality of rooms.

[0088] According to this, the resonance chamber can be divided into multiple rooms, and each room can be subjected to Helmholtz resonance.

[0089] In other respects, the fifth embodiment may be the same as the fourth embodiment.

[0090] 7. Other 7.1 Electronic devices including interposer IP Figure 20 schematically shows the configuration of an electronic device. The electronic device shown in Figure 20 includes an integrated circuit chip (IC), an interposer IP, and a circuit board (CS).

[0091] An integrated circuit chip (IC) is, for example, a chip in which an integrated circuit (not shown) is formed on a silicon substrate. The integrated circuit chip (IC) is provided with multiple bump ICBs (Integrated Circuit Boards) that are electrically connected to the integrated circuit.

[0092] The interposer IP comprises an insulating substrate with a plurality of through-holes (not shown) formed therein, and a conductor (not shown) is provided in each through-hole to electrically connect the front and back surfaces of the substrate. A plurality of lands (not shown) are formed on one side of the interposer IP, each connected to a bump ICB, and each land is electrically connected to one of the conductors in the through-holes. A plurality of bump IPBs are provided on the other side of the interposer IP, and each bump IPB is electrically connected to one of the conductors in the through-holes.

[0093] On one side of the circuit board CS, there are several lands (not shown) which are connected to bumps IPB. The circuit board CS is equipped with several terminals which are electrically connected to these lands.

[0094] Figure 21 is a flowchart illustrating the manufacturing method of an electronic device. In step S1, laser processing and wiring formation are performed on the interposer substrate constituting the interposer IP. The laser processing of the interposer substrate includes the formation of through-holes by irradiating the interposer substrate with laser light LB. Wiring formation includes the formation of a conductive film on the inner wall surface of the through-holes formed in the interposer substrate. The interposer IP is manufactured through these steps.

[0095] In S2, the interposer IP and the integrated circuit chip IC are coupled. This process includes, for example, placing the bump ICBs of the integrated circuit chip IC onto the lands of the interposer IP and electrically connecting the bump ICBs to the lands.

[0096] In S3, the interposer IP and the circuit board CS are coupled. This step includes, for example, placing the bump IPB of the interposer IP onto the lands of the circuit board CS and electrically connecting the bump IPB to the lands.

[0097] 7.2 Supplement The above description is intended to be illustrative, not restrictive. Therefore, it will be apparent to those skilled in the art that modifications can be made to the embodiments of this disclosure without departing from the claims. It will also be apparent to those skilled in the art that the embodiments of this disclosure can be used in combination.

[0098] Terms used throughout this specification and the claims should be interpreted as "non-limiting" unless otherwise specified. For example, terms such as "includes," "have," "equip," and "possess" should be interpreted as "not excluding the existence of components other than those described." Also, the modifier "one" should be interpreted as "at least one" or "one or more." Furthermore, the term "at least one of A, B, and C" should be interpreted as "A," "B," "C," "A+B," "A+C," "B+C," or "A+B+C." In addition, it should be interpreted as including combinations of these with anything other than "A," "B," and "C."

Claims

1. A chamber in which a pair of discharge electrodes are arranged inside, A first optical path tube communicating with the chamber, A window through which light enters from the region between the discharge electrodes via the inside of the first optical path tube, Resonance chamber and, A nozzle tube that connects the inside of the first optical path tube and the resonance chamber, A laser chamber device equipped with the following features.

2. A laser chamber apparatus according to claim 1, The Helmholtz resonance frequency of the resonance chamber and the nozzle tube is greater than the value obtained by subtracting 50 Hz from the repetition frequency of the pulsed discharge between the discharge electrodes, and less than the value obtained by adding 50 Hz to the repetition frequency. Laser chamber device.

3. A laser chamber apparatus according to claim 1, The system further comprises a second optical path tube that houses the first optical path tube, the resonance chamber, and the nozzle tube, communicates with the chamber, and holds the window. Laser chamber device.

4. A laser chamber apparatus according to claim 3, The resonance chamber is arranged around the first optical path tube, Laser chamber device.

5. A laser chamber apparatus according to claim 3, The inner surface of the first optical path tube has a rectangular cross-sectional shape perpendicular to the direction of light passage. Laser chamber device.

6. A laser chamber apparatus according to claim 3, The nozzle tube protrudes from the tube wall of the first optical path tube toward the inside of the resonance chamber, Laser chamber device.

7. A laser chamber apparatus according to claim 3, The first optical path tube, the resonance chamber, and the nozzle tube are integrally configured as a first unit. Laser chamber device.

8. A laser chamber apparatus according to claim 7, Multiple first units are housed in the second optical path tube. The resonance chamber and the nozzle tube are configured such that a plurality of the first units have different Helmholtz resonance frequencies from each other. Laser chamber device.

9. A laser chamber apparatus according to claim 8, The plurality of the first units include the resonance chambers of different volumes. Laser chamber device.

10. A laser chamber apparatus according to claim 8, The plurality of the first units include nozzle tubes of different lengths from each other. Laser chamber device.

11. A laser chamber apparatus according to claim 8, The plurality of the first units include nozzle tubes having different inner diameters from each other. Laser chamber device.

12. A laser chamber apparatus according to claim 7, Multiple first units are housed in the second optical path tube. Multiple of the first units are arranged in line in the direction of light passage, Laser chamber device.

13. A laser chamber apparatus according to claim 3, The aforementioned resonance chamber is The first optical path tube and, The second optical path tube, First and second partitions that close the gap between the outside of the first optical path tube and the inside of the second optical path tube at different positions in the direction of light passage, A laser chamber device, which is a space enclosed by [something].

14. A laser chamber apparatus according to claim 13, The first optical path tube penetrates the first partition wall parallel to the direction of light passage, and the distance between the first partition wall and the second partition wall can be increased or decreased by moving the first optical path tube and the second partition wall parallel to the direction of light passage relative to the first partition wall. Laser chamber device.

15. A laser chamber apparatus according to claim 13, The first optical path tube, the second partition wall, and the nozzle tube are integrally configured as a second unit. Laser chamber device.

16. A laser chamber apparatus according to claim 15, Multiple second units are housed in the second optical path tube. Multiple of the second units are arranged in line in the direction of light passage, Laser chamber device.

17. A laser chamber apparatus according to claim 15, Multiple second units are housed in the second optical path tube. The resonance chamber and the nozzle tube are configured such that a plurality of the second units have different Helmholtz resonance frequencies from each other. Laser chamber device.

18. A laser chamber apparatus according to claim 15, The second unit includes a partition that divides the space enclosed by the first optical path tube, the second optical path tube, the first partition wall, and the second partition wall into a plurality of rooms. The nozzle tube is configured to connect the inside of the first optical path tube with each of the plurality of chambers. Laser chamber device.

19. Optical resonators and, The laser chamber apparatus according to claim 1, wherein the window is located in the optical path of the optical resonator, A laser device equipped with the following features.

20. A method for manufacturing electronic devices, Optical resonators and, A chamber in which a pair of discharge electrodes are arranged inside, A first optical path tube communicating with the chamber, A window located in the optical path of the optical resonator, through which light enters from the region between the discharge electrodes via the inside of the first optical path tube, Resonance chamber and, A nozzle tube that connects the inside of the first optical path tube and the resonance chamber, A laser device equipped with the following generates laser light: The interposer substrate is laser-processed using the aforementioned laser light to produce an interposer. The interposer and the integrated circuit chip are coupled together and electrically connected to each other. The interposer and the circuit board are coupled together and electrically connected to each other. A method for manufacturing electronic devices, including the following.

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