Manufacturing method for semiconductor devices

Abstract

To provide a method for manufacturing semiconductor devices that can improve yield. [Solution] A method for manufacturing a semiconductor device comprises the steps of: preparing an intermediate structure including a first support substrate including a first surface and a second surface, a semiconductor element disposed on the first surface side of the first support substrate, and a delamination layer disposed between the first surface and the semiconductor element; and irradiating the delamination layer with laser light to remove the delamination layer and detach the semiconductor element from the first support substrate. The laser light is such that a first beam of light emitted from a laser light source is expanded in diameter by a first expander to become a second beam of light, the outer periphery of the second beam of light is removed by an aperture to become a third beam of light, the beam shape and intensity distribution of the third beam of light are changed by a diffractive optical element to become a fourth beam of light, and the fourth beam of light reaches the delamination layer. The first expander makes the beam diameter of the second beam of light larger than the design incident diameter of the diffractive optical element.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a semiconductor device.

Background Art

[0002] In the manufacturing process of a semiconductor device, there is a technique of detaching a semiconductor element disposed on a substrate by irradiating the substrate with a laser beam. In this case, due to individual differences in laser light sources, the yield of the detachment process may decrease.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An embodiment of the present disclosure aims to provide a method for manufacturing a semiconductor device capable of improving the yield.

Means for Solving the Problems

[0005] A method for manufacturing a semiconductor device according to an embodiment includes the steps of: preparing an intermediate structure including a first support substrate including a first surface and a second surface located opposite the first surface, at least one semiconductor element disposed on the first surface side of the first support substrate, and a delamination layer disposed between the first surface and the semiconductor element; and irradiating the delamination layer with laser light to remove the delamination layer and detach the semiconductor element from the first support substrate. The laser light is formed when a first beam of light emitted from a laser light source is expanded in diameter by a first expander to become a second beam of light, the outer periphery of the second beam of light is removed by an aperture to become a third beam of light, the beam shape and intensity distribution of the third beam of light are changed by a diffractive optical element to become a fourth beam of light, and the fourth beam of light reaches the delamination layer. The first expander makes the beam diameter of the second beam of light larger than the design incident diameter of the diffractive optical element. [Effects of the Invention]

[0006] According to embodiments of this disclosure, a method for manufacturing a semiconductor device that can improve yield can be realized. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a bottom view showing the intermediate structure in the first embodiment. [Figure 2] Figure 2 is an end view taken along the line II-II shown in Figure 1. [Figure 3] Figure 3 is an end view showing the process of detaching the semiconductor element from the first support substrate in the first embodiment. [Figure 4] Figure 4 shows a laser light irradiation device used in the first embodiment. [Figure 5] Figure 5 shows the aperture of the laser light irradiation device in the first embodiment. [Figure 6] Figure 6 shows the beam shape of the first light and the intensity distribution of the first light, with position on the horizontal axis and relative intensity on the vertical axis. [Figure 7]FIG. 7 is a diagram showing the beam shape of the second light and the intensity distribution of the second light with the position on the horizontal axis and the relative intensity on the vertical axis. [Figure 8] FIG. 8 is a diagram showing the beam shape of the third light and the intensity distribution of the third light with the position on the horizontal axis and the relative intensity on the vertical axis. [Figure 9] FIG. 9 is a diagram showing the beam shape of the fourth light and the intensity distribution of the fourth light with the position on the horizontal axis and the relative intensity on the vertical axis. [Figure 10] FIG. 10 is a graph showing the relationship between the beam diameter and the loss rate, with the beam diameter of the second light on the horizontal axis and the loss rate of the second light due to the passage of the aperture and the diffractive optical element on the vertical axis. [Figure 11] FIG. 11 is a diagram showing the first expander in the second embodiment. [Figure 12] FIG. 12 is a flowchart showing a method of manufacturing a semiconductor device according to the third embodiment. [Figure 13] FIG. 13 is a flowchart showing a method of manufacturing a semiconductor device according to the fourth embodiment. [Figure 14] FIG. 14 is an end view showing the process of transferring a semiconductor element from a first support substrate to a second support substrate in the fourth embodiment. [Figure 15] FIG. 15 is a diagram showing a laser light irradiation device used in the comparative example. [Figure 16] FIG. 16 is a diagram showing the test results of the test example. [Figure 17] FIG. 17 is a diagram showing the test results of the test example.

MODE FOR CARRYING OUT THE INVENTION

[0008] <First Embodiment> FIG. 1 is a bottom view showing an intermediate structure in the present embodiment. FIG. 2 is an end view taken along line II-II shown in FIG. 1. FIG. 3 is an end view showing the process of detaching a semiconductor element from a first support substrate in the present embodiment. Note that each figure is schematic and is emphasized and simplified as appropriate. The same applies to other figures described later.

[0009] (Step of preparing the intermediate structure 10) First, as shown in FIGS. 1 and 2, an intermediate structure 10 is prepared. The intermediate structure 10 includes a first support substrate 20, at least one semiconductor element 30, and a release layer 40. The first support substrate 20 includes a first surface 21 and a second surface 22. The second surface 22 is located on the opposite side of the first surface 21. The semiconductor element 30 is disposed on the first surface 21 side of the first support substrate 20. The release layer 40 is disposed between the first surface 21 of the first support substrate 20 and the semiconductor element 30.

[0010] The first support substrate 20 is a light-transmissive substrate, for example, a sapphire substrate. The semiconductor element 30 is, for example, a light-emitting element, for example, a light-emitting diode (LED). The release layer 40 is made of, for example, a resin, for example, a photosensitive material made of a polyimide-based resin. Note that the release layer 40 is not particularly limited as long as it is a member that can be removed by a laser beam described later. The release layer 40 contacts the first surface 21 of the first support substrate 20 and the semiconductor element 30, and adheres the semiconductor element 30 to the first support substrate 20. In the examples shown in FIGS. 1 and 2, a plurality of semiconductor elements 30 are disposed on the first surface 21 of one first support substrate 20 and are arranged in a matrix. The plurality of semiconductor elements 30 are spaced apart from each other. The release layer 40 is provided for each semiconductor element 30. Therefore, the plurality of release layers 40 are also spaced apart from each other. Note that the release layer 40 does not necessarily need to be provided for each semiconductor element 30, and may be disposed across two or more semiconductor elements 30, or may be disposed across all of the plurality of semiconductor elements 30.

[0011] The shape of the semiconductor element 30 is, for example, a truncated pyramidal shape, and the area of ​​the surface in contact with the release layer 40 is smaller than the area of ​​the opposite surface. Hereinafter, viewing from the second surface 22 toward the first surface 21 of the first support substrate 20 is referred to as a "plan view." A plan view includes cases where components in the foreground are seen through to components behind them. In a plan view, the shapes of the semiconductor element 30 and the release layer 40 are rectangular, for example, square. In a plan view, the length of one side of the semiconductor element 30 and the release layer 40 is, for example, 100 μm or less, 90 μm or less, and 80 μm or less. Also, in a plan view, the length of one side of the semiconductor element 30 and the release layer 40 is, for example, 10 μm or more, 20 μm or more, and 30 μm or more. In one example, in a plan view, the length of one side of the semiconductor element 30 is 45 μm, and the distance between the semiconductor elements 30 is 5 μm. The intermediate structure 10 may be prepared by manufacturing it, or by acquiring it from another party.

[0012] (Step of detaching the semiconductor element 30 from the first support substrate 20) Next, as shown in Figure 3, the release layer 40 is removed by irradiating it with laser light L, thereby separating the semiconductor element 30 from the first support substrate 20. For example, the intermediate structure 10 is positioned such that the semiconductor element 30 is below the first support substrate 20, i.e., in the direction of gravity. Then, the laser light L is irradiated from the second surface 22 side of the first support substrate 20. The laser light L that enters the first support substrate 20 from the second surface 22 passes through the first support substrate 20 and exits from the first surface 21 to reach the release layer 40. If the release layer 40 is a material that sublimes when exposed to laser light L, the release layer 40 vaporizes when the laser light L reaches it. As a result, the adhesive force that the release layer 40 had been using to bond the semiconductor element 30 to the first support substrate 20 disappears, and the semiconductor element 30 separates from the first support substrate 20 due to the pressure associated with the volume expansion when the release layer 40 changes from solid to gas, and gravity. In addition to removing the release layer 40 by sublimation, the semiconductor element 30 may also be detached by irradiating the surface of the release layer 40 with laser light L to apply light, heat, etc., thereby reducing the adhesive force between the release layer 40 and the first support substrate 20.

[0013] (Laser light irradiation device) The laser irradiation device used in the process shown in Figure 3 will be described below. Figure 4 shows the laser light irradiation device used in this embodiment. Figure 5 shows the aperture of the laser light irradiation device in this embodiment. Figure 6 shows the beam shape of the first light and the intensity distribution of the first light, with position on the horizontal axis and relative intensity on the vertical axis. Figure 7 shows the beam shape of the second light and the intensity distribution of the second light, with position on the horizontal axis and relative intensity on the vertical axis. Figure 8 shows the beam shape of the third beam and the intensity distribution of the third beam, with position on the horizontal axis and relative intensity on the vertical axis. Figure 9 shows the beam shape of the fourth beam and the intensity distribution of the fourth beam, with position on the horizontal axis and relative intensity on the vertical axis.

[0014] As shown in Figure 4, the laser light irradiation device 101 used in this embodiment includes a laser light source 110, a first expander 120, an aperture 130, a diffractive optical element 140, a second expander 150, a galvanometer mirror mechanism 160, and a telecentric lens 170. As shown in Figure 5, a circular opening 131 is formed in the aperture 130. The diameter of the opening 131 is denoted as "aperture diameter DA". The diffractive optical element 140 has a "design incident diameter DB" set by the manufacturer of the diffractive optical element 140.

[0015] The laser light source 110 emits laser light L. In the embodiment shown in Figure 4, the first expander 120, aperture 130, diffractive optical element 140, second expander 150, galvanometer mirror mechanism 160, and telecentric lens 170 are arranged in this order along the optical path of the laser light L. Hereinafter, for the sake of convenience, each stage of the laser light L will be referred to as "first light L1", "second light L2", "third light L3", and "fourth light L4".

[0016] Hereinafter, the "relative intensity" of the laser light is defined as the value obtained by normalizing the intensity at any position in a cross-section perpendicular to the direction of laser light propagation by the maximum value of the laser light intensity at that cross-section. Furthermore, the "beam diameter" of the laser light in the first light L1 to the third light L3 is defined as the relative intensity of the laser light being 1 / e 2 This refers to the diameter at the position where e is 1 / e. 2 This is approximately 13.5%. Furthermore, the "beam shape" of the laser light refers to the shape of the laser light in a cross-section perpendicular to the direction of propagation. For the first light L1 to the third light L3, the outer edge of the beam shape has a relative intensity of 1 / e 2 It is a collection of points that satisfy this condition.

[0017] The laser light source 110 emits a first beam of light L1. As shown in Figure 6, the beam shape of the first beam of light L1 is generally circular, and its ellipticity is, for example, between 0.9 and 1.1. Ellipticity is the ratio of the width of the beam shape of the first beam of light L1 in the X direction to the width of the beam shape of the first beam of light L1 in the Y direction. Let D1 be the beam diameter of the first beam of light L1. The beam diameter D1 is, for example, 1 mm. The intensity distribution of the first beam of light L1 is generally a Gaussian distribution. However, the beam shape and intensity distribution of the first beam of light L1 will have variations in intensity due to individual differences in the laser light source 110. This variation is particularly large in the outer periphery of the first beam of light L1. The laser light source 110 is, for example, a nanosecond pulsed third harmonic solid-state laser capable of emitting light with an emission peak wavelength of 355 nm. Note that the laser light source 110 can use any known laser light source.

[0018] The first expander 120 includes a first lens 121, a second lens 122, and a third lens 123 arranged along the optical path of the laser beam L. For example, the first lens 121 is a concave lens, and the second lens 122 and the third lens 123 are convex lenses. The first expander 120 expands the beam diameter of the first beam L1 to form the second beam L2.

[0019] As shown in Figure 7, the beam shape of the second light L2 is generally circular. The beam diameter D2 of the second light L2 is larger than the beam diameter D1 of the first light L1, larger than the design incident diameter DB of the diffractive optical element 140, and smaller than the aperture diameter DA of the aperture 130. In one example, the design incident diameter DB of the diffractive optical element 140 is 5 mm, and the beam diameter D2 of the second light L2 is greater than 5 mm and 10 mm or less. Also in the above example, the aperture diameter DA of the aperture 130 is greater than 5 mm and 8 mm or less. The intensity distribution of the second light L2 is generally a Gaussian distribution. However, the variations in beam shape and intensity distribution that existed in the first light L1 also exist in the second light L2.

[0020] Aperture 130 removes the outer periphery of the second beam L2 to form the third beam L3. This eliminates most of the variations in beam shape and intensity distribution present in the second beam L2. The third beam L3 is defined by the aperture 131 of aperture 130. Since the shape of aperture 131 is circular, the outer edge of the third beam L3 is also circular.

[0021] As shown in Figure 7, the aperture diameter DA of aperture 130 is larger than the design incident diameter DB of the diffractive optical element 140, and smaller than the diameter D2_1% of the portion where the relative intensity of the second light L2 is 0.01 (1%) or more. In the embodiment shown in Figure 7, the aperture diameter DA of aperture 130 is larger than the beam diameter D2 of the second light L2. In this embodiment, as shown in Figure 8, the beam diameter D3 of the third light L3, i.e., the relative intensity is 1 / e 2 The diameter at this position is equal to the beam diameter D2 of the second light L2 and smaller than the aperture diameter DA of aperture 130. As will be described later, depending on the aperture diameter DA of aperture 130, the beam diameter D2 of the second light L2 and the beam diameter D3 of the third light L3 may be the same as or larger than the aperture diameter DA of aperture 130. The intensity distribution of the third light L3 is a distribution in which the outer periphery of the Gaussian distribution has been removed.

[0022] As shown in Figure 4, the diffractive optical element 140 diffracts the third light L3, thereby changing the beam shape and intensity distribution of the third light L3 to form the fourth light L4. The second expander 150 reduces the beam diameter of the fourth light L4. The galvanometer mirror mechanism 160 selects the optical path of the fourth light L4 in two directions by controlling the angle of the mirror along two axes that are perpendicular to and mutually perpendicular to the propagation direction of the fourth light L4. The telecentric lens 170 focuses the fourth light L4 reflected by the galvanometer mirror mechanism 160 while aligning its propagation direction. The fourth light L4 focused by the telecentric lens 170 enters the first support substrate 120 from the second surface 122 shown in Figures 1 and 2, passes through the first support substrate 120, exits from the first surface 121, and reaches the delamination layer 40.

[0023] Figure 9 shows the beam shape and intensity distribution of the fourth light L4 just before it reaches the delamination layer 40. As shown in Figure 9, the beam shape of the fourth light L4 just before it reaches the delamination layer 40 is approximately rectangular, for example, approximately square, and the intensity distribution is top-hat shaped. The beam shape of the fourth light L4 just before it reaches the delamination layer 40 roughly coincides with the shape of the delamination layer 40. The beam shape of the fourth light L4 refers to the portion where the intensity is above the minimum intensity required to vaporize the delamination layer 40. When the fourth light L4 reaches the delamination layer 40, the delamination layer 40 vaporizes.

[0024] Furthermore, the fourth beam L4 emitted from the diffractive optical element 140 achieves a substantially rectangular beam shape and a top-hat shaped intensity distribution at the focal point, i.e., the exfoliation layer 40, as shown in Figure 9. In the path from the diffractive optical element 140 to the exfoliation layer 40, the beam shape and intensity distribution become irregular due to interference and other factors.

[0025] The following describes the dimensional relationships of each part of the laser beam irradiation device 101. As described above, the first expander 120 makes the beam diameter D2 of the second light L2 larger than the design incident diameter DB of the diffractive optical element 140. As a result, even after the outer periphery of the second light L2 is removed by the aperture 130 to become the third light L3, the beam diameter D3 of the third light L3 is larger than the design incident diameter DB, and the relative intensity is (1 / e 2 More than ) light can be incident on it. As a result, the diffractive optical element 140 can function properly.

[0026] Next, we will explain the preferred upper limit of the beam diameter D2 of the second light source L2. Figure 10 is a graph showing the relationship between beam diameter and loss rate, with the beam diameter of the second beam on the horizontal axis and the loss rate of the second beam due to passage through the aperture and diffractive optical element on the vertical axis. In Figure 10, the design incident diameter DB of the diffractive optical element 140 is 5 mm.

[0027] As shown in Figure 10, the larger the beam diameter of the second light source L2, the higher the loss rate, and this correlation can be expressed by the following equation (1). In the following equation (1), the beam diameter D2 of the second light source L2 is x [mm] and the loss rate is y [%].

[0028] y = 1.94x 2 -17.64x+40.47 ···(1)

[0029] According to the above formula (1), in order to keep the loss rate y below 50%, the beam diameter x of the second light L2 must be 9.61 mm or less, which corresponds to 192% or less of the design incident diameter DB (5 mm) of the diffractive optical element 140. For this reason, it is preferable that the first expander 120 sets the beam diameter D2 of the second light L2 to 192% or less of the design incident diameter DB of the diffractive optical element 140.

[0030] Furthermore, it is preferable that the ellipticity of the beam shape of the first light L1 emitted from the laser light source 110 is between 0.9 and 1.1. This makes the beam shape of the first light L1 close to a perfect circle, and the diffractive optical element 140 can bring the beam shape of the fourth light L4 closer to a desired shape, for example, a square corresponding to the peeling layer 40. In addition, by using the laser light irradiation method using the optical element group of this disclosure, it is possible to reduce the influence of beam shape variations caused by individual differences in the laser light source 110.

[0031] Furthermore, as shown in Figure 8, it is preferable that the aperture diameter DA of aperture 130 is larger than the design incident diameter DB of the diffractive optical element 140. This allows the third light L3 to be incident on the entire recommended area of ​​the diffractive optical element 140. As a result, the diffractive optical element 140 can function properly, and the beam shape and intensity distribution of the fourth light L4 are stabilized.

[0032] Furthermore, as shown in Figure 7, it is preferable that the aperture diameter DA of aperture 130 is smaller than the diameter D2_1% of the portion where the intensity of the second light L2 is 1% or more of the maximum value. This effectively removes the outer periphery where the intensity distribution of the second light L2 is highly variable. As a result, the beam shape and intensity distribution of the fourth light L4 become stable.

[0033] (effect) According to this embodiment, the outer periphery of the second beam L2, whose beam diameter has been expanded by the first expander 120, is removed by the aperture 130 before being incident on the diffractive optical element 140. This eliminates most of the variation in the laser light caused by individual differences in the laser light source 110, and stabilizes the beam shape and intensity distribution of the fourth beam L4 irradiated onto the delamination layer 40. As a result, the delamination layer 40 can be stably removed, and the semiconductor element 30 can be stably removed from the first support substrate 20. This improves the yield of the delamination process, and consequently improves the yield of the semiconductor device manufacturing process.

[0034] <Second Embodiment> Figure 11 shows the first expander in this embodiment. As shown in FIGS. 4, 5, and 11, in this embodiment, in the first expander 120, the positions of the second lens 122 and the third lens 123 in the optical path of the laser beam L can be changed. Thereby, the first expander 120 can change the ratio (D2 / D1) of the beam diameter D2 of the second light L2 to the beam diameter D1 of the first light L1.

[0035] As shown in the upper part of FIG. 11, when the distance P between the first lens 121 and the second lens 122 is p1 and the distance Q between the second lens 122 and the third lens 123 is q1, the beam diameter D2 of the second light L2 is d21. As shown in the middle part of FIG. 11, when the distance P is p2 shorter than p1 and the distance Q is q2 longer than q1, the beam diameter D2 is d22 larger than d21. As shown in the lower part of FIG. 11, when the distance P is p3 shorter than p2 and the distance Q is q3 longer than q2, the beam diameter D2 is d23 larger than d22.

[0036] That is, when p1>p2>p3 and q1<q2<q3, d21<d22<d23. Thus, the shorter the distance P between the first lens 121 and the second lens 122 and the longer the distance Q between the second lens 122 and the third lens 123, the larger the beam diameter D2 of the second light L2 becomes.

[0037] Also, in this embodiment, the aperture diameter DA of the aperture 130, that is, the diameter of the opening 131, can be changed. It is preferable that the larger the beam diameter D2 of the second light L2 is, the larger the aperture diameter DA of the aperture 130 is. Specifically, it is preferable that the aperture diameter DA is 0.5 times or more and 1.5 times or less with respect to the beam diameter D2, and more preferably 0.7 times or more and 1.4 times or less. By setting the aperture diameter DA to be 0.5 times or more the beam diameter D2, the second light L2 is not excessively removed by the aperture 130, and energy efficiency can be ensured. On the other hand, by setting the aperture diameter DA to be 1.5 times or less the beam diameter D2, the outer peripheral portion where the variation in the intensity distribution significantly occurs in the second light L2 can be effectively removed. [[ID=,18]]

[0038] According to this embodiment, the beam diameter D2 of the second light L2 and the beam diameter D3 of the third light L3 can be adjusted according to the degree of individual differences in the laser light source 110 and the precision required for the detachment process of the semiconductor element 30. This makes it possible to optimize the balance between energy efficiency and the yield of the detachment process. The configuration and operation of the laser light irradiation device in this embodiment, other than those described above, are the same as in the first embodiment.

[0039] <Third Embodiment> This embodiment is an example of applying the semiconductor element detachment method according to the first or second embodiment to the process of removing a defective semiconductor element. Figure 12 is a flowchart showing the method for manufacturing a semiconductor device according to this embodiment.

[0040] First, the intermediate structure 10 is prepared as shown in step S1 of Figure 12. The method for preparing the intermediate structure 10 is as described in the first embodiment, for example.

[0041] Next, as shown in step S2, the semiconductor elements 30 included in the intermediate structure 10 are inspected. For example, the visual inspection of the intermediate structure 10 is performed, and any semiconductor elements 30 with abnormal appearances are determined to be "defective," while the other semiconductor elements 30 are determined to be "good."

[0042] Next, as shown in step S3, the semiconductor elements 30 determined to be "defective" are detached from the first support substrate 20. The method for detaching the semiconductor elements 30 is, for example, as described in the first embodiment. That is, a laser beam L is irradiated onto the delamination layer 40 placed between the semiconductor elements 30 determined to be "defective" and the first support substrate 20. As a result, only semiconductor elements 30 determined to be "good" remain in the intermediate structure 10.

[0043] According to this embodiment, in the process of detaching the semiconductor element 30, even if there are individual differences in the laser light source 110, the beam shape of the fourth light L4 irradiated onto the detachment layer 40 tends to be approximately the same as that of the detachment layer 40, and the intensity distribution of the fourth light L4 tends to be top-hat shaped, so the detachment layer 40 is easily removed uniformly. As a result, the semiconductor element 30 is accurately and reliably detached from the first support substrate 20, improving the yield in the manufacturing of semiconductor devices. The configuration and operation in this embodiment other than those described above are the same as in the first embodiment.

[0044] <Fourth Embodiment> This embodiment is an example of applying the semiconductor element detachment method according to the first or second embodiment to the transfer of a semiconductor element. Figure 13 is a flowchart showing the method for manufacturing a semiconductor device according to this embodiment. Figure 14 is an end view showing the process of transferring the semiconductor element from the first support substrate to the second support substrate in this embodiment.

[0045] As shown in step S1 of Figure 13, the intermediate structure 10 is prepared. The method for preparing the intermediate structure 10 is, for example, as described in the first embodiment.

[0046] Meanwhile, as shown in step S4 of Figure 13 and in Figure 14, a second support substrate 50 is prepared. In the second support substrate 50, an adhesive layer 52 is provided on the carrier substrate 51. The carrier substrate 51 is made of, for example, glass. The adhesive layer 52 is made of, for example, a silicone-based resin. The adhesive layer 52 is located on the third surface 53 of the second support substrate 50.

[0047] The order in which the steps of preparing the intermediate structure 10 shown in step S1 and preparing the second support substrate 50 shown in step S4 are performed is not limited; the intermediate structure 10 may be prepared after the second support substrate 50 has been prepared.

[0048] Next, as shown in step S5 of Figure 13 and in Figure 14, with the third surface 53 of the second support substrate 50 and the semiconductor element 30 of the intermediate structure 10 separated, the first surface 21 of the first support substrate 20 and the third surface 53 of the second support substrate 50 are brought into opposition. At this time, it is preferable to position the second support substrate 50 below the intermediate structure 10, that is, in the direction of gravity.

[0049] Next, as shown in step S6 of Figure 13 and in Figure 14, the release layer 40 is irradiated with laser light L through the first support substrate 20. This causes the release layer 40 to vaporize, and the semiconductor element 30 detaches from the first support substrate 20. The method of irradiating with laser light L is, for example, as described in the first embodiment. The semiconductor element 30 that has detached from the first support substrate 20 reaches the second support substrate 50 and is bonded to the adhesive layer 52. In this way, the semiconductor element 30 is transferred from the first surface 21 of the first support substrate 20 to the third surface 53 of the second support substrate 50.

[0050] According to this embodiment, in the process of transferring the semiconductor element 30, even if there are individual differences in the laser light source 110, the reproducibility of the beam shape and intensity distribution of the fourth beam L4 of the laser light L is high, resulting in high transfer accuracy. As a result, the yield in the manufacturing of semiconductor devices is improved. The configuration and operation in this embodiment other than those described above are the same as in the first embodiment.

[0051] The third and fourth embodiments may be implemented in combination. That is, in a method for manufacturing a semiconductor device including a semiconductor element 30, an intermediate structure 10 is prepared as shown in step S1 of Figure 12, the semiconductor element 30 is inspected as shown in step S2, and the semiconductor element 30 that is determined to be "defective" as a result of the visual inspection is removed as shown in step S3. Meanwhile, a second support substrate 50 is prepared as shown in step S4 of Figure 13. Then, the intermediate structure 10 and the second support substrate 50 are placed opposite each other as shown in step S5, and the semiconductor element 30 may be transferred from the first support substrate 20 to the second support substrate 50 as shown in step S6. In this case, by performing the steps shown in step S3 and step S6 in the manner described in the first or second embodiment, the yield in the method for manufacturing a semiconductor device can be improved.

[0052] <Example Test> Next, we will describe test examples comparing the first or second embodiment with comparative examples. Figure 15 shows the laser light irradiation device used in the comparative example. Figures 16 and 17 show the test results for this example.

[0053] As shown in Figure 15, in the laser light irradiation device 201 used in the comparative example, the laser light source 110, aperture 130, first expander 120, diffractive optical element 140, second expander 150, galvanometer mirror mechanism 160, and telecentric lens 170 are arranged in this order along the optical path of the laser light L emitted from the laser light source 110.

[0054] In other words, the laser light irradiation device 201 has the aperture 130 and the first expander 120 in the reversed position compared to the laser light irradiation device 101 shown in Figure 4. Therefore, in the laser light irradiation device 201, the aperture 130 removes the outer periphery of the first beam L1 emitted from the laser light source 110, and then the beam diameter is expanded by the first expander 120 to become the second beam L2.

[0055] In this test example, multiple conditions were set by varying the laser irradiation device used, the beam diameter D2 of the second light L2, and the aperture diameter DA of the aperture 130. Under each condition, laser light L was emitted and irradiated onto the peeled layer 40. The processing marks on the peeled layer 40 were then observed using an optical microscope. In this test example, a "diffractive optical element (DOE) with focusing function separation, manufactured by Sumitomo Electric Industries, Ltd." was used as the diffractive optical element 140. The design incident diameter DB of this DOE (intensity is 1 / e 2 The incident beam diameter (for which the above is achieved) is 5.0 mm.

[0056] Figure 16 shows the irradiation conditions of the laser light L and optical microscope images of the processed area. As shown in Figure 16, in Comparative Example 1, the laser beam irradiation device 201 shown in Figure 15 was used, with the beam diameter D2 of the second beam L2 set to 5.0 mm and the aperture diameter DA of the aperture 130 set to 1.8 mm. In Comparative Example 1, the processed mark was not approximately rectangular. This is thought to be because the aperture 130 was positioned upstream of the first expander 120, and the beam diameter D2 of the second beam L2 was not larger than the design incident diameter DB of the diffractive optical element 140.

[0057] In Comparative Example 2, the laser beam irradiation device 101 shown in Figure 4 was used, with the beam diameter D2 of the second beam L2 set to 5.0 mm and the aperture diameter DA of the aperture 130 set to 8.0 mm. In Comparative Example 2 as well, the processed marks were not approximately rectangular. This is thought to be because the beam diameter D2 was not larger than the design incident diameter DB.

[0058] In Example 1, using the laser beam irradiation device 101 shown in Figure 4, the beam diameter D2 of the second beam L2 was set to 6.0 mm, and the aperture diameter DA of the aperture 130 was set to 7.4 mm. In Example 1, the processed mark was approximately rectangular. This is thought to be because the aperture 130 was positioned downstream of the first expander 120, and the beam diameter D2 was larger than the design incident diameter DB.

[0059] In Example 2, using the laser beam irradiation device 101 shown in Figure 4, the beam diameter D2 of the second beam L2 was set to 6.5 mm, and the aperture diameter DA of the aperture 130 was set to 7.5 mm. In Example 2 as well, the processed mark was approximately rectangular. This is thought to be because the aperture 130 was positioned downstream of the first expander 120, and the beam diameter D2 was larger than the design incident diameter DB.

[0060] In Example 3, using the laser beam irradiation device 101 shown in Figure 4, the beam diameter D2 of the second beam L2 was set to 7.0 mm, and the aperture diameter DA of the aperture 130 was set to 7.2 mm. In Example 3 as well, the processed mark was approximately rectangular. This is thought to be because the aperture 130 was positioned downstream of the first expander 120, and the beam diameter D2 was larger than the design incident diameter DB.

[0061] Figure 17 shows optical microscope images of the processed areas when multiple laser irradiation devices with the same configuration are used. As shown in Figure 17, in this test example, seven laser irradiation devices with the same configuration as the laser irradiation device 201 shown in Figure 15 were prepared, and laser light irradiation was performed using each device, and the processed marks were observed. As a result, the shape of the processed marks differed greatly depending on the laser irradiation device. This is thought to be due to individual differences in the laser light source 110.

[0062] On the other hand, three laser irradiation devices with the same configuration as the laser irradiation device 101 shown in Figure 4 were prepared, and laser light was irradiated using each of them, and the resulting processing marks were observed. As a result, the shape of the processing marks was a relatively uniform rectangle. This is thought to be because the individual differences in the laser light source 110 were mitigated by the optical system of the laser irradiation device 101.

[0063] For example, when the optical system configuration for laser irradiation devices No. 1 and No. 6 was the same as that of laser irradiation device 201, the variation in the shape of the processed marks was large. In contrast, when the optical system configuration for laser irradiation devices No. 1 and No. 6 was the same as that of laser irradiation device 101, the variation in the shape of the processed marks was small.

[0064] The embodiments described above are examples of the present disclosure, and the disclosure is not limited to these embodiments. For example, the present disclosure also includes the addition, deletion, or modification of some components or processes in the embodiments described above. Furthermore, the embodiments described above can be implemented in combination with each other.

[0065] This disclosure includes the following aspects:

[0066] (Note 1) A step of preparing an intermediate structure including a first support substrate including a first surface and a second surface located opposite the first surface, at least one semiconductor element disposed on the first surface side of the first support substrate, and a delamination layer disposed between the first surface and the semiconductor element, A step of removing the delamination layer by irradiating the delamination layer with laser light to detach the semiconductor element from the first support substrate, Equipped with, The laser light is as follows: the first beam emitted from the laser light source is expanded by the first expander to form the second beam; the outer periphery of the second beam is removed by the aperture to form the third beam; the beam shape and intensity distribution of the third beam are changed by the diffractive optical element to form the fourth beam; and the fourth beam reaches the peeling layer. The first expander is a method for manufacturing a semiconductor device, wherein the beam diameter of the second light is made larger than the design incident diameter of the diffractive optical element.

[0067] (Note 2) The method for manufacturing a semiconductor device according to Appendix 1, wherein the ellipticity of the beam shape of the first light is 0.9 or more and 1.1 or less.

[0068] (Note 3) The method for manufacturing a semiconductor device according to Appendix 1 or 2, wherein the first expander is configured to make the beam diameter of the second light 192% or less of the design incident diameter of the diffractive optical element.

[0069] (Note 4) A method for manufacturing a semiconductor device according to any one of the appendices 1 to 3, wherein the diameter of the aperture opening is larger than the design incident diameter of the diffractive optical element and smaller than the diameter of the portion where the intensity in the second light is 1% or more of the maximum value.

[0070] (Note 5) A method for manufacturing a semiconductor device according to any one of the appendices 1 to 4, wherein the diameter of the aperture opening can be changed.

[0071] (Note 6) The first expander includes a first lens, a second lens, and a third lens arranged along the optical path of the laser beam, A method for manufacturing a semiconductor device according to any one of the appendices 1 to 5, wherein the position of the second lens and the position of the third lens in the optical path can be changed.

[0072] (Note 7) The first expander is capable of changing the ratio of the beam diameter of the second light to the beam diameter of the first light, The diameter of the opening of the aperture can be changed. A method for manufacturing a semiconductor device according to any one of the appendices 1 to 6, wherein the diameter of the aperture opening is 0.5 times or more and 1.5 times or less than the beam diameter of the second light.

[0073] (Note 8) The fourth light beam is reduced in diameter by the second expander, its path is selected by the galvanometer mirror mechanism, and it is focused by the telecentric lens before reaching the delamination layer. A method for manufacturing a semiconductor device according to any one of the appendices 1 to 7, wherein, in a plan view, the shape of the peeling layer is rectangular, and the length of one side of the rectangle is 100 μm or less.

[0074] (Note 9) In a plan view, the semiconductor element and the delamination layer have rectangular shapes. The method for manufacturing a semiconductor device according to any one of the appendices 1 to 8, wherein the diffractive optical element has a rectangular beam shape for the fourth light.

[0075] (Note 10) The process further includes, after the step of preparing the intermediate structure, inspecting the semiconductor element and detecting any defective semiconductor element, A method for manufacturing a semiconductor device according to any one of the appendices 1 to 9, wherein, in the step of separating the semiconductor device from the first support substrate, the laser light is irradiated onto the delamination layer disposed between the semiconductor device determined to be defective and the first support substrate.

[0076] (Note 11) A step of preparing a second support substrate having a third surface, The process involves separating the third surface from the semiconductor element and then placing the first surface of the intermediate structure and the third surface of the second support substrate facing each other. Furthermore, A method for manufacturing a semiconductor device according to any one of the appendices 1 to 9, wherein in the step of detaching the semiconductor element from the first support substrate, the semiconductor element detached from the first support substrate is transferred to the third surface of the second support substrate. [Explanation of Symbols]

[0077] 10 Intermediate structure 20 1st support board 21 Page 1 22 Side 2 30 Semiconductor elements 40. Delamination layer 50 Second support board 51 Carrier substrate 52 Adhesive layer 53 Page 3 101 Laser beam irradiation device 110 Laser light source 120 First Expander 121 First Lens 122 Second lens 123 Third Lens 130 Aperture 131 Opening 140 Diffractive optical elements 150 2nd Expander 160 Galvano Mirror Mechanism 170 Telecentric Lens 201 Laser beam irradiation device D1 Beam diameter of the first light L1 D2 Beam diameter of the second light L2 D2_1% Diameter of the region where the relative intensity of the second luminous L2 is 1% or more. D3 Third beam diameter of light L3 DA Aperture 130 opening diameter (diameter of opening 131) DB design incident diameter L Laser light L1 1st light L2 2nd light L3 Third Light L4 4th light

Claims

1. A step of preparing an intermediate structure including a first support substrate including a first surface and a second surface located opposite the first surface, at least one semiconductor element disposed on the first surface side of the first support substrate, and a delamination layer disposed between the first surface and the semiconductor element, A step of removing the delamination layer by irradiating the delamination layer with laser light to detach the semiconductor element from the first support substrate, Equipped with, The laser light is as follows: the first beam emitted from the laser light source is expanded by the first expander to form the second beam; the outer periphery of the second beam is removed by the aperture to form the third beam; the beam shape and intensity distribution of the third beam are changed by the diffractive optical element to form the fourth beam; and the fourth beam reaches the peeling layer. The first expander is a method for manufacturing a semiconductor device, wherein the beam diameter of the second light is made larger than the design incident diameter of the diffractive optical element.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the ellipticity of the beam shape of the first light is 0.9 or more and 1.1 or less.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the first expander is configured to set the beam diameter of the second light to 192% or less of the design incident diameter of the diffractive optical element.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the diameter of the aperture opening is larger than the design incident diameter of the diffractive optical element and smaller than the diameter of the portion where the intensity in the second light is 1% or more of the maximum value.

5. A method for manufacturing a semiconductor device according to claim 1, wherein the diameter of the aperture opening can be changed.

6. The first expander includes a first lens, a second lens, and a third lens arranged along the optical path of the laser beam, A method for manufacturing a semiconductor device according to claim 1, wherein the position of the second lens and the position of the third lens in the optical path can be changed.

7. The first expander is capable of changing the ratio of the beam diameter of the second light to the beam diameter of the first light, The diameter of the opening of the aperture can be changed. The method for manufacturing a semiconductor device according to claim 1, wherein the diameter of the aperture opening is 0.5 times or more and 1.5 times or less the beam diameter of the second light.

8. The fourth light beam is reduced in diameter by the second expander, its path is selected by the galvanometer mirror mechanism, and it is focused by the telecentric lens before reaching the delamination layer. A method for manufacturing a semiconductor device according to claim 1, wherein, in a plan view, the shape of the peeling layer is rectangular, and the length of one side of the rectangle is 100 μm or less.

9. In a plan view, the semiconductor element and the delamination layer have rectangular shapes. The method for manufacturing a semiconductor device according to claim 1, wherein the diffractive optical element has a rectangular beam shape for the fourth light.

10. The process further includes, after the step of preparing the intermediate structure, inspecting the semiconductor element and detecting any defective semiconductor element, A method for manufacturing a semiconductor device according to any one of claims 1 to 9, wherein, in the step of separating the semiconductor device from the first support substrate, the laser light is irradiated onto the delamination layer disposed between the semiconductor device determined to be defective and the first support substrate.

11. A step of preparing a second support substrate having a third surface, The process involves separating the third surface from the semiconductor element and then placing the first surface of the intermediate structure and the third surface of the second support substrate facing each other. Furthermore, A method for manufacturing a semiconductor device according to any one of claims 1 to 9, wherein in the step of detaching the semiconductor device from the first support substrate, the semiconductor device detached from the first support substrate is transferred to the third surface of the second support substrate.

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