Metal oxide film

Abstract

This invention provides a method for forming metal oxynitride films by epitaxial growth at low temperatures. [Solution] A gas containing nitrogen gas is introduced onto a single crystal substrate, and an oxide target is used. A method for fabricating metal oxynitride films by epitaxial growth using the sputtering method. The oxide target contains zinc, and the substrate during the deposition of the metal oxynitride film is at 80°C. The temperature must be 400°C or lower, and the nitrogen gas flow rate must be between 50% and 100% of the total gas flow rate. That is the case.

Claims

[Claim 1] A metal oxynitride film on an yttria-stabilized zirconia (YSZ) substrate with a plane orientation of (111), The aforementioned metal oxynitride film comprises zinc, indium, and gallium. The aforementioned metal oxynitride film is a metal oxynitride film that is oriented in-plane.

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