Rotation angle detection system and semiconductor package

Abstract

The present invention provides a rotation angle detection system comprising a magnet and a rotating body, which includes a magnetic material and is positioned opposite the magnet in a first direction, and which detects the rotation angle of the rotating body based on a change in the magnetic flux density generated from the magnet in response to the rotation of the rotating body. The rotation angle detection system comprises a semiconductor package having a semiconductor chip, a first redistribution layer which includes a region that overlaps with at least a portion of the first electrode pattern in a plan view and a region that extends outside the semiconductor chip and does not overlap the semiconductor chip, and which includes a first conductive portion electrically connected to the first electrode pattern, a first electrode pillar, and a first sealing portion which seals the semiconductor chip and a portion of the first electrode pillar with resin to form a first sealing layer. The rotation angle detection system further comprises a substrate on which the semiconductor package is mounted. Another portion of the first electrode pillar is exposed from the surface of the sealing layer facing the substrate.

Description

Technical Field

[0004]

[0001] The present invention relates to a rotation angle detection system and a semiconductor package.

Background Art

[0002] Patent Document 1 describes "a package for an image sensor or a large-power LSI that includes a glass substrate or a high heat dissipation substrate on one surface and extracts external electrodes from the opposite surface." [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-70882

Summary of the Invention

Problems to be Solved by the Invention

[0003] In a semiconductor package provided with a magnetic rotation angle detection sensor, it is desired to reduce the distance between the semiconductor chip and the magnetic body.

Means for Solving the Problems

[0004] A first embodiment of the present invention provides a rotation angle detection system. The rotation angle detection system comprises a magnet and a rotating body including a magnetic material and positioned opposite the magnet in a first direction, and detects the rotation angle of the rotating body based on a change in the magnetic flux density generated from the magnet in response to the rotation of the rotating body, and comprises a semiconductor chip positioned between the magnet and the rotating body and having a first electrode pattern for detecting the rotation angle of the rotating body, a first redistribution layer including a first conductive portion electrically connected to the first electrode pattern and including a region that overlaps with at least a part of the first electrode pattern in a plan view and a region that extends outside the semiconductor chip and does not overlap the semiconductor chip, and a first electrode pillar positioned at a distance opposite the side surface of the semiconductor chip and electrically connected to the first conductive portion, and a first sealing portion that seals the semiconductor chip and a part of the first electrode pillar with resin to form a first sealing layer, and comprises a semiconductor package in which the first redistribution layer and the first sealing layer are laminated. The rotation angle detection system further comprises a substrate on which the semiconductor package is mounted. Another portion of the first electrode pillar is exposed from the surface of the sealing layer facing the substrate.

[0005] In the rotation angle detection system, the semiconductor chip may include a magnetoelectric conversion unit.

[0006] In any of the rotation angle detection systems, the magnetoelectric conversion unit may be a magnetic sensor including a Hall element.

[0007] In any of the rotation angle detection systems, the magnetoelectric conversion unit may be a magnetic sensor including a magnetoresistive element.

[0008] In any of the aforementioned rotation angle detection systems, the semiconductor chip may further include a signal processing circuit that processes the signal output from the magnetoelectric conversion unit.

[0009] In any of the rotation angle detection systems, the magnetoresistive element may include at least one Wheatstone bridge circuit or half-bridge circuit.

[0010] In any of the rotation angle detection systems, the magnetoresistive element includes at least one group of resistors comprising four resistors, and the at least one group of resistors may be electrically connected to the first redistribution layer and together with the first redistribution layer constitute a Wheatstone bridge circuit.

[0011] In any of the rotation angle detection systems, the distance between the first surface of the semiconductor chip facing the rotating body and the first surface of the semiconductor package facing the first surface of the semiconductor chip may be 20 μm or less.

[0012] In any of the rotation angle detection systems, the distance between the first surface of the semiconductor package and the rotating body may be 100 μm or more.

[0013] In any of the rotation angle detection systems, the magnet may be positioned so as to overlap with the semiconductor package in the first direction.

[0014] In any of the rotation angle detection systems, the substrate may have through holes or recesses on a second surface of the substrate opposite to the first surface on which the semiconductor package is mounted, at positions that overlap with at least a portion of the semiconductor package in the first direction. The magnets may be provided in the through holes or recesses.

[0015] Any of the rotation angle detection systems may further include: a signal processing IC chip having a second electrode pattern and positioned in a plan view to overlap with the semiconductor chip; a second redistribution layer having a second conductive portion electrically connected to the second electrode pattern and including a region overlapping with at least a portion of the second electrode pattern and a region extending outside the signal processing IC chip and not overlapping with the signal processing IC chip; a second electrode pillar positioned at a distance from the side surface of the signal processing IC chip and in a plan view to overlap with the first electrode pillar and electrically connected to the second conductive portion; and a second sealing portion that seals the signal processing IC chip and a portion of the second electrode pillar. The second redistribution layer and the second sealing layer may be stacked. The first electrode pillar and the second electrode pillar may be electrically connected via bumps.

[0016] A second embodiment of the present invention provides a semiconductor package. The semiconductor package comprises a semiconductor chip having a magnetoelectric conversion section and a first electrode pattern; a first redistribution layer including a first conductive portion electrically connected to the first electrode pattern, which in a plan view includes a region overlapping with at least a portion of the first electrode pattern and a region extending outside the semiconductor chip and not overlapping with the semiconductor chip; a first electrode pillar positioned at a distance from the side surface of the semiconductor chip and electrically connected to the first conductive portion; and a first sealing portion that seals the semiconductor chip and a portion of the first electrode pillar with resin to form a first sealing layer. The first redistribution layer and the first sealing layer are laminated. The other portion of the first electrode pillar is exposed from the sealing portion.

[0017] In any of the semiconductor packages, the other portion of the first electrode pillar may be exposed from a second surface of the semiconductor package opposite to the first surface facing the first electrode pattern. The semiconductor package may further include a bump on the second surface of the semiconductor package that is electrically connected to the other portion of the first electrode pillar.

[0018] Any of the semiconductor packages may be disposed between a magnet and a rotating body arranged to face the magnet in a first direction. The semiconductor chip may detect the rotation angle of the rotating body based on a change in the magnetic flux density generated from the magnet in response to rotation of the rotating body.

[0019] Note that the above summary of the invention does not enumerate all the features of the present invention. Also, sub-combinations of these feature groups may also be inventions.

Brief Description of the Drawings

[0020] [Figure 1] An example of a schematic diagram of a rotation angle detection system 100 according to an embodiment is shown. [Figure 2A] An example of a schematic diagram of a rotation angle detection system 200 according to a comparative example is shown. [Figure 2B] An example of a plan view of a rotation angle detection system 200 according to FIG. 2A is shown. [Figure 3] An upper view showing an example of the configuration of a magnetoelectric conversion unit 122 according to an embodiment is shown. [Figure 4] An example of an upper view of a semiconductor package 110 provided with the magnetoelectric conversion unit 122 of FIG. 3 is shown. [Figure 5] An example of a cross-sectional view of the semiconductor package 110 taken along the line A-A' is shown. [Figure 6] An upper view showing another example of the configuration of a magnetoelectric conversion unit 122 according to an embodiment is shown. [Figure 7] An example of an upper view of a semiconductor package 110 provided with the magnetoelectric conversion unit 122 of FIG. 6 is shown. [Figure 8] An example of a cross-sectional view of the semiconductor package 110 taken along the line B-B' is shown. [Figure 9] An example of the configuration of a magnetoelectric conversion unit 122 according to a comparative example is shown [Figure 10] An example of a schematic diagram of a rotation angle detection system 300 according to an embodiment is shown [Figure 11A] An example of a manufacturing method of the semiconductor package 110 is shown. [Figure 11B]Figure 10A is followed by an example of a method for manufacturing the semiconductor package 110. [Modes for carrying out the invention]

[0021] The present invention will be described below through embodiments of the invention, but these embodiments are not intended to limit the invention as defined in the claims. Furthermore, not all combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0022] Figure 1 shows an example of a schematic diagram of the rotation angle detection system 100 according to an embodiment. The rotation angle detection system 100 is a system that includes a semiconductor package 110 equipped with a magnetic sensor for detecting the rotation angle of the rotating body 50 relative to the magnet 62.

[0023] The rotation angle detection system 100 comprises a rotating body 50, a substrate 60 on which a magnet 62 is provided, and a semiconductor package 110 connected to the substrate 60. The semiconductor package 110 is connected to the substrate 60 via solder bumps 64. The semiconductor package 110 includes a sealing layer 120 on which a semiconductor chip 121 is sealed, and a redistribution layer 130.

[0024] In this specification, the viewpoint from which the semiconductor package 110 is viewed in the direction toward the semiconductor package 110 from the rotating body 50 side may be referred to as the plan view. Also, the direction toward the substrate 60 via the semiconductor package 110 from the rotating body 50 is an example of the "first direction". In the first direction, the rotating body 50 is positioned opposite the magnet 62.

[0025] The rotating body 50 is a magnetic material and has convex and / or concave portions, and rotates around a rotation axis. In this embodiment, the rotating body 50 has a gear-shaped cross-section. However, the cross-sectional shape of the rotating body 50 is not limited to a gear shape, and may be a disc shape having convex and / or concave portions in at least a part of it. The magnetic field generated by the magnet 62 fluctuates depending on the relative positional relationship between the magnetic rotating body 50 and the magnet 62. Therefore, by providing the magnetic rotating body 50 with the aforementioned convex and / or concave portions, the magnetic field and / or magnetic flux density detected by the semiconductor package 110 changes according to the rotation angle of the rotating body 50.

[0026] The rotation axis of the rotating body 50 is located at a position away from the surface 110b of the semiconductor package 110 that faces the rotating body 50. For example, the rotation axis of the rotating body 50 is located at the geometric center of a cross-section that intersects with the rotation axis of the rotating body 50. In this embodiment, the rotation axis of the rotating body 50 corresponds to the center of the gear-shaped rotating body 50. However, the position where the rotation axis of the rotating body 50 is located is not limited to being located at the geometric center of a cross-sectional shape that intersects with the rotation axis of the rotating body 50, as long as the rotating body 50 can rotate smoothly without colliding with the semiconductor package 110.

[0027] The substrate 60 is a substrate on which the semiconductor package 110 is mounted and on which the magnet 62 is provided. The substrate 60 is connected to the outside of the rotation angle detection system 100.

[0028] In this embodiment, the substrate 60 has a through-hole 63 for installing a magnet 62 at a position that overlaps with the semiconductor package 110 in the direction from the substrate 60 toward the rotating body 50 via the semiconductor package 110. The magnet 62 is positioned in the through-hole 63 so as to protrude from the substrate 60 on the side 60a opposite to the side 60b on which the semiconductor package 110 is mounted.

[0029] The magnet 62 has an external profile that corresponds to the through-hole 63 of the substrate 60. For example, the through-hole 63 of the substrate 60 may have a tapered shape in which the cross-sectional area of ​​the through-hole 63 decreases as it moves from the side 60b on which the semiconductor package 110 is mounted to the opposite side 60a. In this case, the magnet 62 has a corresponding external profile that allows it to engage with and lock into the through-hole 63 of the substrate 60. The magnet 62 may be fixed to the through-hole 63 of the substrate 60 via adhesive or soldering.

[0030] Thus, the substrate 60 has a through hole 63 or a recess on the surface 60a opposite to the surface 60b on which the semiconductor package 110 is mounted, at a position that overlaps with the semiconductor package 110 in the direction from the rotating body 50 to the substrate 60 via the semiconductor package 110. This allows the magnet 62 to be installed on the substrate 60. The magnet 62 may be fixed to the substrate 60 in the through hole 63 or the recess. Thus, the magnet 62 may be positioned on the surface 60a of the substrate 60 opposite to the surface 60b on which the semiconductor package 110 is mounted. By providing the magnet 62 in the through hole 63 or recess of the substrate 60, it becomes easier to reduce the distance between the magnet 62 and the semiconductor chip 121 on which the magnetoelectric conversion unit 122 is mounted, making it easier to sufficiently increase the magnitude of the magnetic field or magnetic flux density detected by the magnetoelectric conversion unit 122. In addition, by providing the magnet 62 in the through hole 63 or recess of the substrate 60, the distance between the magnet 62 and the rotating body 50 is also shortened. This makes it easier to ensure the detection accuracy of the magnetic field or magnetic flux density in the semiconductor chip 121.

[0031] The magnet 62 is a magnet that generates a predetermined, approximately constant magnetic field of sufficient strength to reach the convex and / or concave portions of the rotating body 50. The distance between the substrate 60 on which the magnet 62 is installed and the rotating body 50 is set to a distance that is sufficiently close in order to generate a magnetic field of such strength. For example, the magnet 62 may be made of a neodymium magnet or a samarium-cobalt magnet. In particular, when used in applications where the temperature of the substrate 60 changes significantly, neodymium magnets tend to weaken as the temperature rises, so in such cases, a samarium-cobalt magnet may be selected. Although samarium-cobalt magnets have weaker magnetic force at room temperature compared to neodymium magnets, when the magnet 62 is installed in a through-hole 63 or concave portion of the substrate 60, it becomes easier to secure a sufficiently large magnetic field or magnetic flux density in the semiconductor package 110 even if a samarium-cobalt magnet is selected as the magnet 62.

[0032] The semiconductor package 110 is a package that includes a semiconductor chip equipped with a magnetoelectric conversion element whose resistance fluctuates in response to changes in the magnetic field or magnetic flux density generated from the magnet 62 as the rotating body 50 rotates. The semiconductor package 110 is positioned between the magnet 62 and the rotating body 50, which is positioned opposite the magnet 62 in a first direction.

[0033] The encapsulation layer 120 is a layer that functions as a substrate by molding the semiconductor chip 121 with encapsulation resin 124. The encapsulation layer 120 may be a reconfigurable substrate. The encapsulation layer 120 includes a surface 120a facing the redistribution layer 130 and a surface 120b opposite to surface 120a. The encapsulation layer 120 also includes the semiconductor chip 121, the encapsulation resin 124, and the electrode pillars 134. The encapsulation layer 120 is an example of a "first encapsulation layer".

[0034] The magnetoelectric conversion unit 122 of the semiconductor chip 121 may be provided within the semiconductor chip 121, particularly at a position close to the surface 121b facing the rotating body 50 within the semiconductor chip 121.

[0035] The semiconductor chip 121 is a semiconductor chip on which a magnetoelectric conversion unit 122 is provided. For example, the semiconductor chip 121 includes a signal processing circuit that processes the signal output from the magnetoelectric conversion unit 122. In this case, the semiconductor chip 121 processes the signal based on the voltage output by the magnetoelectric conversion unit 122 in response to the change in magnetic flux density caused by the rotation of the rotating body 50, and obtains information about the rotation angle. Since the magnetoelectric conversion unit 122 is bonded to the semiconductor chip 121, the bonded magnetoelectric conversion unit 122 is shown by a dashed line in Figure 1. Here, the surface of the semiconductor chip 121 opposite to surface 121b is represented as surface 121a.

[0036] As another example, in the magnetic sensor of the semiconductor chip 121, the signal processing circuit that processes the output voltage signal generated according to the magnetic flux density may be located elsewhere on the substrate 60, or elsewhere via the substrate 60. In this case, a signal having a current or voltage corresponding to the current generated in the magnetoelectric conversion unit 122 is supplied to the substrate 60 via the conductive pattern layer 131, electrode pillars 134, and solder bumps 64 in the redistribution layer 130. The signal processing circuit provided on the substrate 60 processes the signal supplied from the semiconductor package 110 to obtain information regarding the rotation angle.

[0037] The magnetoelectric conversion unit 122 is, for example, a magnetic sensor including a Hall element. When the magnetoelectric conversion unit 122 is a Hall sensor, its equivalent circuit is represented by a Wheatstone bridge circuit in which four resistors are arranged on the four sides of a diamond-shaped circuit. The drive voltage of the Hall element is applied to a contact between the resistors of such a Wheatstone bridge circuit, and the contact to which the drive voltage is applied and the contact located diagonally opposite each other on the bridge circuit are grounded. In the diamond-shaped Wheatstone bridge circuit, the potential difference between the other two resistors is detected as the Hall potential.

[0038] As another example, the magnetoelectric conversion unit 122 is a magnetic sensor including a magnetoresistive element. For example, the magnetoelectric conversion unit 122 is provided by a semiconductor magnetoresistive element (SMR) using indium antimonide (InSb). The magnetoelectric conversion unit 122 may be provided by other magnetoresistive elements, such as anisotropic magnetoresistive elements (AMR), giant magnetoresistive elements (GMR), or tunnel magnetoresistive elements (TMR), instead of or in addition to the SMR.

[0039] The magnetoresistive elements of the magnetoelectric conversion unit 122 may be elements bonded to other elements of the semiconductor package 110 along the direction of movement of the convex and / or concave portions of the rotating body 50. Alternatively, in another embodiment, the magnetoresistive elements of the magnetoelectric conversion unit 122 may include a plurality of resistors arranged on the surface 110b of the opposing semiconductor package 110 along the direction of movement of the convex and / or concave portions of the rotating body 50. The spacing between the plurality of resistors may be determined according to the pitch of the convex and / or concave portions of the rotating body 50. Note that InSb is an element with higher carrier mobility compared to indium arsenide (InAs) and aluminum indium antimony (AlInSb), and is suitable as a material for SMRs to construct a highly sensitive and low-power magnetic sensor.

[0040] The sealing resin 124 is an example of the "first sealing portion". The sealing resin 124 seals at least a portion of the semiconductor chip 121 and the electrode pillar 134. The sealing resin 124 may seal the semiconductor chip 121 such that the surface 121b facing the rotating body 50 is exposed. The sealing resin 124 is provided, for example, with a resin such as epoxy resin. However, the material of the sealing resin 124 may be selected from other materials that are appropriate from the viewpoint of mechanical strength, electrical insulation, and process compatibility.

[0041] The redistribution layer 130 is an example of a "first redistribution layer". The redistribution layer 130 is a layer that includes a conductive pattern layer 131 that electrically connects the magnetoelectric conversion section 122 and the electrode pillar 134 of the semiconductor chip 121, and insulating layers 133 and 135.

[0042] The conductive pattern layer 131 is an example of the "first conductive portion." The conductive pattern layer 131 is a metal layer that forms a conductive pattern within the redistribution layer 130 for electrically connecting the semiconductor chip 121 and the electrode pillar 134. The conductive pattern layer 131 includes, as an example, copper (Cu) provided by electrolytic copper plating.

[0043] The conductive pattern layer 131 electrically connects the terminals on the semiconductor chip 121 to the electrode pillars 134. The conductive pattern layer 131 may be formed of a metal such as copper, for example. The conductive pattern layer 131 may be formed by forming a seed layer of titanium and / or copper, and then depositing a metal such as copper on a pattern formed with resist by electroplating.

[0044] In one embodiment, a conductive connection portion may be provided between the terminals on the semiconductor chip 121 and the conductive pattern layer 131, and a metal layer may be provided between the electrode pillar 134 and the conductive pattern layer 131.

[0045] The insulating layer 133 constitutes part of the redistribution layer 130 and protects the semiconductor chip 121 (the side 121b facing the rotating body) and the end 134b of the electrode pillar 134 facing the rotating body 50. The insulating layer 133 protects the terminal portion connecting the terminals on the semiconductor chip 121 to the conductive pattern layer 131, and the metal layer between the electrode pillar 134 and the conductive pattern layer 131. The insulating layer 133 is provided on the encapsulation layer 120, which includes the encapsulation resin 124, the semiconductor chip 121, and the electrode pillar 134. The insulating layer 133 is provided, for example, with an insulating resin such as phenolic resin. However, the material of the insulating layer 133 may be selected from other materials that are appropriate from the viewpoint of mechanical strength, electrical insulation, and process compatibility.

[0046] The insulating layer 135 is the second insulating layer included in the redistribution layer 130. The insulating layer 135 protects the conductive connection portion protected by the insulating layer 133 and the conductive pattern layer 131 connected to the metal layer. Therefore, the surface 124b opposite to the surface 124a of the encapsulating resin 124 that faces the substrate 60 corresponds to the surface 130a opposite to the surface 130b of the redistribution layer 130 that faces the rotating body 50. Also, the surface 130b of the redistribution layer 130 that faces the rotating body 50 corresponds to the surface 110b of the semiconductor package 110 that faces the rotating body 50. The insulating layer 135 may be made of the same material as the insulating layer 133. The material of the insulating layer 135 may also be other appropriate materials selected from the viewpoint of mechanical strength, electrical insulation, and process compatibility, similar to the insulating layer 133. In addition, the insulating layers 133 and 135 may be made of a different resin than the encapsulating resin 124.

[0047] The electrode pillar 134 is a pillar-shaped electrode that penetrates the encapsulating resin 124. The electrode pillar 134 is positioned within the encapsulating resin 124, spaced apart from the side surface of the semiconductor chip 121. The end 134b of the electrode pillar 134 facing the rotating body 50 is electrically connected to the redistribution layer 130. On the other hand, the end 134a of the electrode pillar 134 facing the substrate 60 is exposed from the surface 124a of the encapsulating resin 124 facing the substrate 60 (corresponding to the surface 110a of the semiconductor package 110 facing the substrate 60) and is electrically connected to the substrate 60 via the solder bump 64. The electrode pillar 134 may be formed of a metal such as copper, for example.

[0048] The electrode pillar 134 is an example of a "first electrode pillar". The sealing resin 124 constitutes a "sealing portion" that seals the semiconductor chip 121 and a part of the electrode pillar 134 with resin. In this case, the other part of the electrode pillar 134 is exposed from the surface of the sealing portion's surface 124a facing the substrate 60.

[0049] In the rotation angle detection system 100 of this embodiment, the distance between the surface 121b of the semiconductor chip 121 facing the rotating body 50 and the surface 110b of the semiconductor package 110 facing the rotating body 50 (corresponding to the surface 130b of the insulating layer 133 facing the substrate 60) corresponds to the thickness t1 of the insulating layer 133. Here, in the rotation angle detection system 100 of this embodiment, the semiconductor chip 121 and the electrode pillar 134 within the insulating layer 133 are electrically connected via the redistribution layer 130, and no lead frame or bonding wire is used. For example, if a bonding wire is used to connect the lead frame and the semiconductor chip, reducing the thickness t1 may cause the bonding wire to protrude from the insulating layer 133 or make wire flow more likely. However, in the rotation angle detection system 100 of this embodiment, a redistribution layer 130 is used for the electrical connection between the semiconductor chip 121 and the electrode pillar 134 without using a lead frame or bonding wire, so the thickness t1 can be designed to be thin. For example, the thickness t1 may be 30 μm or less, 20 μm or less, or 15 μm or less. When bonding wire is used, the thickness t1 may be designed to be 50 μm or more, for example, 65 μm or 150 μm.

[0050] The distance between the surface 110b of the semiconductor package 110 facing the rotating body 50 and the rotating body 50 is denoted by distance D1. In particular, the magnetoelectric conversion section 122 of the semiconductor chip 121 is separated from the rotating body 50 by at least the distance D1 plus the thickness t1 of the insulating layer 133. Therefore, in order to produce a larger change in magnetic flux density and a larger output voltage in the magnetoelectric conversion section 122 of the semiconductor chip 121, it is preferable that the sum of distance D1 and thickness t1 be smaller. For example, the sum of distance D1 and thickness t1 may be 600 μm or less, 500 μm or less, or 400 μm or less. Note that distance D1 is sometimes referred to as a spatial gap (or air gap).

[0051] On the other hand, in order to more easily install each component between the rotating body 50 and the substrate 60, and consequently to more easily manufacture the rotation angle detection system 100, a larger distance D1 is preferable. Also, if the air gap is made too small, for example, if the rotating body 50 is a gear, surface runout of the gear may occur, which may cause assembly problems such as the rotating body 50 colliding with the semiconductor package 110. Therefore, the distance D1 may be 100 μm or more, 200 μm or more, or 300 μm or more. Thus, there is a trade-off relationship between the magnitude of the distance D1 and the advantages mentioned above. In this embodiment, the distance D1 is designed to an appropriate size when these trade-offs exist.

[0052] As described above, in this embodiment, the thickness t1 can be designed to be small by using the redistribution layer 130. Therefore, it is easy to make the sum of the distance D1 and the thickness t1 small enough so that the magnitude of the change in magnetic flux density in the magnetoelectric conversion unit 122 is sufficiently apparent, while making the distance D1 large enough to meet the manufacturing or assembly requirements of the rotation angle detection system 100. Thus, in the rotation angle detection system 100 of this embodiment, the thickness t1 of the insulating layer 133 can be designed to be small, making it easier to meet the design requirements for the distance D1.

[0053] In order to design the redistribution layer 130 to have a small thickness t1, the combination of the conductive pattern layer and the insulating layer may be provided in a single layer. However, if the shape of the wiring provided by the redistribution layer 130 is complex, the combination of the conductive pattern layer and the sealing resin may be provided in multiple layers. For example, an example in which the redistribution layer 130 includes a sealing resin 124 and two layers of conductive pattern layers and insulating layers will be described later with reference to Figure 10.

[0054] Figure 2A shows an example of a schematic diagram of a rotation angle detection system 200 related to a comparative example. In Figure 2A, the rotation angle detection system 200 will be explained, focusing mainly on its configuration which differs from that of the rotation angle detection system 100.

[0055] In the rotation angle detection system 200, the substrate 60 mounts the semiconductor chip 210 via solder bumps 64. The semiconductor chip 210 comprises a magnetic sensor 221 on which a magnetoelectric conversion unit 222 is provided, a sealing resin 223, bonding wires 125, a lead frame 270, and a lead frame 272. As shown in Figure 2B, the lead frames 270 and 272 are provided independently to be configured to have a desired conductivity. In the rotation angle detection system 200, the magnetic sensor 221 and the bonding wires 125 are sealed together on the surface of the lead frame 270 on which the magnetic sensor 221 is die-bonded, thereby forming the semiconductor chip 210.

[0056] Figure 2B is an example of a plan view of the rotation angle detection system 200 shown in Figure 2A. Figure 2A is an example of a cross-sectional view along the cutting line A-A' shown in Figure 2B.

[0057] The magnetic sensor 221 detects changes in magnetic flux density caused by the rotation of the rotating body 50 when the magnetoelectric conversion unit 222 is attached to it. The magnetic sensor 221 has a surface 221a on the lead frame 270 side and a surface 221b on the opposite side of surface 221a, on the rotating body 50 side. The magnetoelectric conversion unit 222 may be configured to include a magnetoresistive element, similar to the magnetoelectric conversion unit 122.

[0058] The sealing resin 223 seals the surface of the lead frame 270 on which the magnetic sensor 221 is mounted, the magnetic sensor 221 on which the magnetoelectric conversion unit 222 is provided, and the bonding wire 125. The sealing resin 223 is, for example, made of epoxy resin. In other words, in the comparative example, the surface of the lead frame 270 on which the magnetic sensor 221 is mounted, the magnetic sensor 221, and the bonding wire 125 are sealed with epoxy resin, and phenolic resin may not be used. Since the sealing resin 223 is provided on the lead frame 270, the surface 223a of the sealing resin 223 facing the lead frame 270 corresponds to the surface 270b of the lead frame 270 facing the sealing resin 223. On the other hand, the surface 223b of the sealing resin 223 facing the rotating body 50 corresponds to the surface 210b of the semiconductor chip 210 facing the rotating body 50.

[0059] The magnetoelectric conversion unit 222 is connected to the lead frame 272 by bonding wires 125. Since no rewiring layer is used for the connections between the electrodes of the magnetoelectric conversion unit 222, the electrodes are connected in a bridge circuit manner without separation by the electrode pattern. In other words, the electrode pattern has a wiring structure that is connected in such a way that it can be drawn in a single stroke. The magnetoelectric conversion unit 222 is provided on the surface 221b facing the rotating body 50 where the magnetic sensor 221 is located.

[0060] The lead frame 270 is the lead frame to which the magnetic sensor 221 is die-bonded. The lead frame 270 may be, for example, a lead frame made of copper (Cu). The surface 270a of the lead frame 270 facing the substrate 60 corresponds to the surface 210a of the semiconductor chip 210 facing the substrate 60. Since the magnetic sensor 221 is die-bonded to the lead frame 270, the surface 221a of the magnetic sensor 221 facing the lead frame 270 corresponds to the surface 270b of the lead frame 270 facing the magnetic sensor 221 (and the sealing resin 124).

[0061] The lead frame 272 is, for example, a lead frame provided independently and separately from the lead frame 270 to which the semiconductor chip 210 is die-bonded. The lead frame 272 may be made of the same material as the lead frame 270, or it may be made of a different material. For example, the lead frame 272 may be made of copper (Cu). The lead frame 272 is connected to the magnetoelectric conversion unit 222 by bonding wires 125. The lead frame 272 has a configuration that allows it to be electrically connected to the external components of the semiconductor chip 210.

[0062] The sealing resin 223 is provided on the substrate 270 and seals the magnetic sensor 221 and bonding wire 125. In the rotation angle detection system 200 according to the comparative example, the distance between the surface 221b of the magnetic sensor 221 facing the rotating body 50 and the surface 210b of the sealing resin 223 opposite to surface 221b, where the semiconductor chip 210 faces the rotating body 50 (corresponding to the surface 223b of the sealing resin 223 facing the substrate 60), corresponds to the thickness t2.

[0063] As an example, the thickness t2 is set to 150 μm. In the comparative example semiconductor chip 210, a bonding wire 125 is used, so in order to prevent the bonding wire 125 from flowing or the wire from protruding from the surface 223b of the sealing resin 223, the thickness t2 is set to be thicker than the thickness t1.

[0064] Furthermore, the distance between the surface 210b of the semiconductor chip 210 facing the rotating body 50 and the rotating body 50 is denoted by distance D2. For example, distance D2 is set to 200 μm. Therefore, in this case, the sum of thickness t2 and distance D2 is 350 μm.

[0065] In the rotation angle detection system 100, if the sum of thickness t1 and distance D2 is designed to be the same 350 μm, then thickness t1 can be designed to be, for example, 20 μm. In this case, distance D2 becomes 330 μm. By designing in this way, the spatial gap distance D1 can be designed to be larger than the distance D2, so the assembly of the rotation angle detection system 100 is improved compared to the rotation angle detection system 200. Furthermore, in the rotation angle detection system 100, if the requirements for the spatial gap distance D1 for assembly are less stringent and the spatial gap distance D1 can be made even smaller, the output amplitude of the magnetic sensor of the rotation angle detection system 100 can be increased by reducing the sum of thickness t1 and distance D2.

[0066] Figure 3 is a top view showing an example of the configuration of the magnetoelectric conversion unit 1221 according to the embodiment. The magnetoelectric conversion unit 122 includes a resistor 126 and electrodes 141, 143, 145, 147, 151, 153, 155, and 157.

[0067] The electrodes 141, 143, 145, 147, 151, 153, 155, 157, and the resistor 126, along with the traces connecting them, constitute an "electrode pattern." The electrode pattern in the magnetoelectric conversion unit 1221 is an example of a "first electrode pattern."

[0068] The semiconductor package 110 of this embodiment includes a redistribution layer 130. The conductive pattern layer 131 of the redistribution layer 130 connects electrodes 141 and 143 in parallel so as to apply the power supply voltage VDD to electrodes 141 and 143, and electrically connects electrodes 145 and 147 so as to set the ground voltage GND to electrodes 145 and 147.

[0069] Furthermore, the conductive pattern layer 131 electrically connects electrodes 151 and 153. This makes it possible to read the potential VA from the contacts provided between them. In addition, the conductive pattern layer 131 electrically connects electrodes 155 and 157. This makes it possible to read the potential VB from the contacts provided between them. The rewiring layer 130 of this embodiment can connect electrodes without increasing the thickness of the insulating layer 133 of the rewiring layer 130. Therefore, the magnetoelectric conversion unit 1221 of this embodiment has a configuration in which electrodes set to the same potential, that is, electrodes 141 and 143, electrodes 145 and 147, electrodes 151 and 153, or electrodes 155 and 157 are separated, and these electrodes are electrically connected by the conductive pattern layer 131 of the rewiring layer 130.

[0070] The resistor 126 in the figure is, as an example, a group of resistors that make up a magnetoresistive element for an SMR. The resistor 126 forms a bridge circuit through this connection relationship. The magnetoelectric conversion section 122 includes a magnetoresistive element, an electrode pattern, and a part of the conductive pattern layer 131, i.e., a part of the rewiring layer 130, that connects the electrode patterns to form the bridge circuit. Here, the resistor 126 may be another magnetoresistive element having the same connection relationship, i.e., a magnetoresistive element for an AMR, GMR, or TMR.

[0071] In this embodiment, the circuit formed by the magnetoresistive element forms a diamond-shaped bridge circuit between the power supply voltage VDD and the ground voltage GND, thereby forming a Wheatstone bridge circuit. This allows for accurate detection of the magnetic field or magnetic flux density that changes according to the rotation angle as the rotating body 50, which is a magnetic material, rotates. However, the magnetoresistive element of the magnetoelectric conversion unit 122 may also form a half-bridge circuit that divides the power supply voltage VDD and the ground voltage GND by connecting the power supply voltage VDD and the ground voltage GND via two resistors connected in series. Even with a half-bridge circuit, the magnetoelectric conversion unit 122 can detect the voltage generated according to the magnetic flux density that changes according to the rotation angle of the rotating body 50. Thus, the magnetoresistive element of the magnetoelectric conversion unit 122 may include at least one Wheatstone bridge circuit or half-bridge circuit.

[0072] Furthermore, if the magnetoelectric conversion unit 122 is a Hall element, the Hall element is also represented in the equivalent circuit as forming a bridge circuit. Even when the magnetoelectric conversion unit 122 is a Hall element, the drive voltage of the Hall element is set to voltage VDD, and the voltage of the contacts on the diagonal of the bridge circuit is set to the ground voltage GND. Then, the Hall electromotive force is read from the contacts provided between the contacts set to those voltages.

[0073] Figure 4 shows an example of a top view of a semiconductor package 110 equipped with the magnetoelectric conversion unit 122 shown in Figure 3. In other words, Figure 4 is a plan view of the semiconductor package 110.

[0074] In a plan view, the redistribution layer 130 has a so-called fan-out structure in which the conductive pattern layer 131 is arranged to extend outward from the semiconductor chip 121. Therefore, in a plan view, the conductive pattern layer 131 of the redistribution layer 130 includes a region that overlaps with at least a portion of the electrode pattern in the magnetoelectric conversion unit 1221 and a region that extends outward from the semiconductor chip 121 and does not overlap with the semiconductor chip 121. Furthermore, the conductive pattern layer 131 of the redistribution layer 130 is electrically connected to the electrode pattern in the magnetoelectric conversion unit 1221.

[0075] Furthermore, the resistor group including the four resistors of resistor 126 is electrically connected to the conductive pattern layer 131 of the redistribution layer 130, and together with a part of the redistribution layer 130 that connects the electrode patterns of the magnetoelectric conversion unit 122, it forms a Wheatstone bridge circuit. The conductive pattern layer 131 is connected to an electrode pillar 134 that connects electrodes 141 and 143 and applies the power supply voltage VDD, and is connected to an electrode pillar 134 that connects electrodes 145 and 147 and sets the ground voltage to GND. In addition, the conductive pattern layer 131 is connected to an electrode pillar 134 that connects electrodes 151 and 153 and reads the voltage VA, and is connected to an electrode pillar 134 that connects electrodes 155 and 157 and reads the voltage VB. The magnetic sensor of the semiconductor chip 121 may indicate the rotation angle of the rotating body 50 by the arctangent (inverse negative tangent) of voltages VA and VB.

[0076] Here, Figure 4 shows the cutting line B-B'. Figure 5 shows an example of a B-B' cross-sectional view of the semiconductor package 110.

[0077] In the B-B' section, the cutting line B-B' does not pass through components such as the electrode pillar 134. Therefore, components that the cutting line B-B' does not pass through are shown with dashed lines. The terminals in the electrode pattern of the magnetoelectric conversion unit 122 may be formed so as not to protrude significantly from the upper surface of the semiconductor chip 121. The portion connecting such terminals to the conductive pattern layer 131 of the redistribution layer 130 may be formed integrally with the conductive pattern layer 131 by a single process using metal electroplating. In the figure, terminals corresponding to electrodes 143, 155, 157, and 147 are shown. Electrodes 155 and 157 are electrically connected by the conductive pattern layer 131, and the potential VB is read out.

[0078] Figure 6 shows a top view illustrating another example of the configuration of the magnetoelectric conversion unit 1222 according to the embodiment. The magnetoelectric conversion unit 1222 is composed of a resistor 128 and electrodes 161, 163, 165, 167, 172, and 174.

[0079] The electrodes 161, 163, 165, 167, 172, 174, and the resistor 128, along with the traces connecting them, constitute an "electrode pattern." The electrode pattern in the magnetoelectric conversion unit 1221 is an example of a "first electrode pattern."

[0080] The semiconductor package 110 of this embodiment includes a redistribution layer 130. The conductive pattern layer 131 of the redistribution layer 130 connects electrodes 161 and 163 in parallel so that the power supply voltage VDD is applied to electrodes 161 and 163, and electrically connects electrodes 165 and 167 so that electrodes 165 and 167 are set to the ground voltage GND. Therefore, the magnetoelectric conversion unit 1222 of this embodiment has a configuration in which electrodes set to the same potential, i.e., between electrodes 161 and 163 and between electrodes 165 and 167, are spaced apart, similar to the magnetoelectric conversion unit 1221, and these electrodes are electrically connected by the conductive pattern layer 131.

[0081] On the other hand, unlike the magnetoelectric conversion unit 1221, the magnetoelectric conversion unit 1222 is formed in such a way that the electrode 172 from which the potential VA is read and the electrode 174 from which the potential VB is read are integrally connected. Thus, when using the redistribution layer 130, the electrodes that should be set to the same potential may be connected by the conductive pattern layer 131, or they may be provided in a configuration where only a part is connected. In the electrodes 161, 172, and 165 of the magnetoelectric conversion unit 1222, two resistors divide the voltage between the power supply voltage VDD and the ground voltage GND to form a half-bridge circuit from which the potential VA of electrode 172 is read. Similarly, in electrodes 163, 174, and 167, two resistors divide the voltage between the power supply voltage VDD and the ground voltage GND to form a half-bridge circuit from which the potential VB of electrode 174 is read. In the magnetoelectric conversion unit 1222, electrodes 161 and 163 and electrodes 165 and 167 are connected by a conductive pattern layer 131, thereby connecting two half-bridge circuits and forming a bridge circuit overall. In this way, even in the magnetoelectric conversion unit 1222, the magnetoresistive elements constitute a bridge circuit.

[0082] Figure 7 shows an example of a top view of a semiconductor package 110 equipped with the magnetoelectric conversion unit 122 shown in Figure 6. In Figure 7, as in Figure 4, the redistribution layer 130 is arranged to extend outward from the semiconductor chip 121 in a plan view. Regarding the connection relationships, unlike in Figure 4, the conductive pattern layer 131 is connected to an electrode pillar 134 for connecting electrodes 161 and 163 and for applying the power supply voltage VDD, and is connected to an electrode pillar 134 for connecting electrodes 165 and 167 and for setting the ground voltage to GND. The conductive pattern layer 131 connects electrodes 172 and 174 to electrode pillars 134 for reading voltages VA and VB from the magnetoelectric conversion unit 1222, respectively. The magnetic sensor of the semiconductor chip 121 may indicate the rotation angle of the rotating body 50 by the arctangent (inverse negative tangent) of voltages VA and VB.

[0083] Here, Figure 7 shows the cutting line C-C'. Figure 8 shows an example of a C-C' cross-sectional view of the semiconductor package 110.

[0084] In the C-C' section, the cutting line C-C' does not pass through components such as the electrode pillar 134. Therefore, components that the cutting line C-C' does not pass through are shown with dashed lines. In the figure, terminals corresponding to electrodes 163, 174, and 167 are shown. Unlike electrodes 155 and 157 in the cross-sectional view of Figure 5, electrode 174, from which the potential VB is read, is formed integrally without being separated from each other.

[0085] As described above, in the rotation angle detection system 100, by reducing the thickness t1, it is possible to increase the output amplitude of the magnetic sensor of the rotation angle detection system 100 or increase the air cap, thereby realizing a design that is easier to meet manufacturing or assembly requirements. In addition, the redistribution layer 130 can also increase the degree of freedom in designing the electrode pattern of the magnetoelectric conversion unit 122.

[0086] Figure 9 shows an example of the configuration of the magnetoelectric conversion unit 222 according to a comparative example. The magnetoelectric conversion unit 222 is composed of a resistor 224 and electrodes 225, 226, 228, and 229.

[0087] The electrodes 225, 226, 228, and 229 of the magnetoelectric conversion unit 222 are connected to the electrode pillar 134 by bonding wires 125, and the semiconductor chip 210 does not use connections in the redistribution layer 130. If one attempts to provide a structure in which electrodes 225 set to potential VDD, electrode 226 set to potential GND, electrode 228 that reads potential VA, and electrode 229 that reads potential VB are spaced apart and connected to the electrode pillar 134 using bonding wires 125, it becomes difficult, for example, because the bonding wires 125 tend to protrude from the surface of the sealing resin 223 or the wires tend to short-circuit with each other. Therefore, electrodes 225, 226, 228, and 229 in the comparative example cannot be spaced apart. In this case, the degree of freedom in designing the electrode patterns in the magnetoelectric conversion unit 1221 and magnetoelectric conversion unit 1222 is improved compared to the electrode pattern in the magnetoelectric conversion unit 222.

[0088] Furthermore, the magnetoelectric conversion unit 222 shown in Figure 9 can also be used as the magnetoelectric conversion unit of the rotation angle detection system 100 shown in Figure 1. In the rotation angle detection system 200, the magnetoelectric conversion unit 222 is used instead of the magnetoelectric conversion units 1221 and 1222, which are connected by the rewiring layer 130.

[0089] Figure 10 shows an example of a schematic diagram of a rotation angle detection system 300 according to an embodiment. The rotation angle detection system 300 includes semiconductor packages 110 and 310, a solder bump 164 for connecting semiconductor package 110 to semiconductor package 310, and a solder bump 364 for connecting semiconductor package 110 to the outside.

[0090] The configuration of the semiconductor package 110 of the rotation angle detection system 300 may be the same as that of the semiconductor package 110 in the rotation angle detection system 100. Below, the configuration of the semiconductor package 110 of the rotation angle detection system 300 will be explained, focusing mainly on the differences from the semiconductor package 110 in the rotation angle detection system 100.

[0091] The semiconductor package 110 of the rotation angle detection system 300 includes a sealing layer 120 and a redistribution layer 130.

[0092] The encapsulation layer 120 is a layer that functions as a substrate by molding a semiconductor chip 121, on which a magnetoelectric conversion unit 122 is provided, with encapsulation resin 124. The encapsulation layer 120 may be a reconfigurable substrate. The encapsulation layer 120 includes a surface 120a facing the redistribution layer 130 and a surface 120b opposite to surface 120a. The encapsulation layer 120 and the redistribution layer 130 are laminated together. The encapsulation layer 120 also includes the semiconductor chip 121, the encapsulation resin 124, and the electrode pillars 134.

[0093] The semiconductor chip 121 is equipped with a magnetoelectric conversion unit 122 and functions as a magnetic sensor. In the rotation angle detection system 300, the semiconductor chip 121 does not process the current in response to the change in magnetic field or magnetic flux density detected by the magnetic sensor, but outputs a voltage or current signal based on this current to the semiconductor chip 321 via the redistribution layer 130 or the like.

[0094] The redistribution layer 130 includes a conductive pattern layer 131 and insulating layers 133 and 135. The conductive pattern layer 131 may be made of a metal including copper (Cu), for example, provided by electrolytic copper plating.

[0095] On the other hand, semiconductor package 310 is a semiconductor package similar to semiconductor package 110. Semiconductor package 310 includes a sealing layer 320 and a redistribution layer 330. In semiconductor package 310, the conductive pattern 331 of the redistribution layer 330 electrically connects the electrode pillar 334 and the semiconductor chip 321. The redistribution layer 330 includes the conductive pattern 331, insulating layers 333, 335, and terminal portions 340.

[0096] The encapsulation layer 320 is a layer that functions as a substrate by molding the semiconductor chip 321 with encapsulation resin 324. The encapsulation layer 320 may be a reconfigured substrate. The encapsulation layer 320 and the redistribution layer 330 are laminated together. The encapsulation layer 320 also includes the semiconductor chip 321, encapsulation resin 324, electrode pillars 334, and terminal portions 340. The encapsulation layer 320 is an example of a "second encapsulation layer".

[0097] The semiconductor chip 321 processes the signals output from the semiconductor chip 121. In the example shown in the figure of the embodiment, the semiconductor chip 321 is positioned so that it completely overlaps with the semiconductor chip 121 in a plan view. This reduces the mounting substrate area for mounting the rotation angle detection system 300. However, the sizes of the semiconductor chip 321 and the semiconductor chip 121 may be different. In such cases, the semiconductor chip 321 may be positioned so that it overlaps with the semiconductor chip 121 in a plan view, at least in part. The semiconductor chip 321 has an electrode pattern (not shown) that is connected to the redistribution layer 330.

[0098] The conductive pattern 331 of the redistribution layer 330 includes, in a plan view, a region that overlaps with at least a portion of the electrode pattern placed on the semiconductor chip 321, and a region that extends outside the semiconductor chip 321 and does not overlap with the semiconductor chip 321. The redistribution layer 330 is electrically connected to the electrode pattern placed on the semiconductor chip 321.

[0099] The conductive pattern 331 may be composed of multiple conductive pattern layers and pillars that electrically connect the layers, as in the example shown in Figure 10, or it may be composed of a single layer, similar to the conductive pattern layer 131 shown in Figure 10.

[0100] In the conductive pattern 331, the combination of the conductive pattern layer and the insulating layer may be provided in a single layer. In the figure, in the rewiring layer 330, one conductive pattern layer is provided, and one insulating layer 333 is provided to protect it. Furthermore, an insulating layer 335 is provided to protect the terminal portion 340 that connects the conductive pattern layer and the solder bump 364. If the shape of the wiring provided by the rewiring layer 330 is complex, the combination of the conductive pattern layer and the insulating layer may be provided in a further number of layers.

[0101] The electrode pillar 334 is electrically connected to the electrode pillar 134 via the solder bump 164 and is also electrically connected to the conductive pattern 331 of the redistribution layer 330. The electrode pillar 334 is positioned opposite the side surface of the semiconductor chip 321, spaced apart, and overlapping with the electrode pillar 134 in a plan view.

[0102] The sealing resin 324 seals the semiconductor chip 321 and a portion of the electrode pillar 334. Furthermore, the insulating layer 333 protects a portion of the conductive pattern 331, and the insulating layer 335 protects a portion of the conductive pattern 331 and the terminal portion 340. Here, the portion of the redistribution layer 330 that is sealed by the sealing resin 324 may be the side of the redistribution layer 330 opposite to the side on which the solder bumps 364 are provided.

[0103] The rewiring layer 330 includes a conductive pattern 331, an insulating layer 333, and terminal portions 340. The conductive pattern 331 is protected by the insulating layer 333. The insulating layer 333 may be made of the same material as the insulating layer 133.

[0104] The terminal portion 340 is a terminal portion for electrically connecting the conductive pattern 331 and the solder bump 364. The terminal portion 340 may be provided on the surface of the redistribution layer 330. The terminal portion 340 is the terminal portion on which the solder bump 364 is provided, and is provided using electroless plating or the like with a metal that has good solder wettability and is chemically stable, such as gold or nickel.

[0105] The semiconductor chip 321 corresponds to a "signal processing IC chip". An electrode pattern provided on the semiconductor chip 321 and connected to the redistribution layer 330 is an example of a "second electrode pattern". The redistribution layer 330 is an example of a "second redistribution layer". The conductive pattern 331 is an example of a "second conductive portion". The electrode pillar 334 is an example of a "second electrode pillar". In this embodiment, the sealing resin 124 is an example of a "first sealing portion". The sealing resin 324 is an example of a "second sealing portion", and the "sealing portion" may be formed to include the "first sealing portion" and the "second sealing portion".

[0106] In the rotation angle detection system 300 of this embodiment, a semiconductor package 110 on which a magnetic sensor is provided and a semiconductor package 310 on which a semiconductor chip 321 that functions as a signal processing IC chip are designed separately and stacked together. Even in this case, by using redistribution layers 130 and 330 in the semiconductor packages 110 and 310 respectively, the overall height of the rotation angle detection system 300 is reduced, and the design freedom of the electrode patterns in the semiconductor chips 121 and 321 is also improved.

[0107] Figure 11A shows an example of a manufacturing method for a semiconductor package 110. In Figure 11A, the semiconductor chip 121 is placed before the redistribution layer. This type of manufacturing method is an example of a manufacturing method called chip-first. The manufacturing method for the semiconductor package 110 comprises steps S102 to S124.

[0108] An adhesive layer 82 is placed on the substrate 80, and the semiconductor chip 121 and electrode pillars 134 are mounted via the adhesive layer 82, thereby bonding the semiconductor chip 121 and electrode pillars 134 to the substrate 80 (S102). The adhesive layer 82 may be made of an adhesive such as a water-soluble adhesive. The electrode pillars 134 are arranged opposite the side surface of the semiconductor chip 121 with a gap between them. The substrate 80 is, for example, made of silicon (Si). In the figure, the number of semiconductor chips 121 and electrode pillars 134 corresponding to one semiconductor package are arranged, but when manufacturing multiple semiconductor packages simultaneously, they may be repeatedly arranged on one surface of the substrate 80 with gaps between them.

[0109] Next, the semiconductor chip 121 and the electrode pillar 134 are molded and sealed with the sealing resin 124 (S104). The substrate 80 and adhesive layer 82 are peeled off from the semiconductor chip 121, the sealing resin 124, and the electrode pillar 134 (S106). Then, the sealing resin 124 is back-ground from the side where the semiconductor chip 121 is not exposed until the electrode pillar 134 is exposed (S108). The sealing layer 120 is thus manufactured. Thus, the sealing layer 120 may be a reconfigured substrate formed in a chip-first method.

[0110] Next, an insulating layer 133 is formed on the side of the encapsulation layer 120 where the semiconductor chip 121 is exposed (S110). The insulating layer 133 may be made of phenolic resin. Next, a seed layer 137 for forming a conductive pattern layer 131 is placed on the insulating layer 133 (S112). The seed layer 137 may be formed by sputtering titanium (Ti) and / or copper (Cu). Furthermore, the steps of the manufacturing method of the semiconductor package 110 of this embodiment continue in Figure 11B.

[0111] Figure 11B shows an example of a method for manufacturing the semiconductor package 110, following Figure 11A.

[0112] Following S112, a resist is applied to the insulating layer 133. Next, a metal layer 139 is placed to form a conductive pattern layer 131 by electrolytic copper plating (S114). Then, the conductive pattern layer 131 is formed by immersing the metal layer 139 in an etching solution (S116). Next, the conductive pattern layer 131 is protected by forming an insulating layer 133 (S118). This forms the redistribution layer 130. The insulating layer 133 may be made of phenolic resin. This completes the manufacturing of the internal structure of the semiconductor package 110.

[0113] Next, a configuration for electrically connecting the semiconductor package 110 to the substrate 60 is provided. A metal plating layer 66 is provided on the end of the electrode pillar 134 that faces the substrate 60 (S120). The metal plating layer 66 may be provided by electroless plating of nickel or gold. Electroless plating of nickel or gold is used because nickel (Ni) or gold (Au) are materials with excellent solder wettability, high chemical stability such as corrosion resistance, and excellent reliability in terms of mechanical strength and electrical properties. Furthermore, solder bumps 64 are placed on the metal plating layer 66 of nickel or gold (S122). This provides a configuration for electrically connecting the semiconductor package 110 and the substrate 60.

[0114] This enables the manufacture of a semiconductor package 110 for the rotation angle detection system 100. In the manufacturing method of the rotation angle detection system 100 in this embodiment, the explanation was based on a so-called chip-first manufacturing method in which a redistribution layer 130 is provided in a step after the semiconductor chip 121 is provided on the substrate 80 and adhesive layer 82. However, the manufacturing method of the rotation angle detection system 100 is not limited to the chip-first manufacturing method, and it may also be manufactured by a so-called chip-last manufacturing method in which a redistribution layer 130 including an insulating layer 133 and a conductive pattern layer 131 is formed first, and then a sealing layer 120 including the semiconductor chip 121 is formed in a later step.

[0115] With such a rotation angle detection system 100, by reducing the thickness t1, it is possible to increase the output amplitude of the magnetic sensor of the rotation angle detection system 100 or increase the air gap, thereby realizing a design that is easier to meet manufacturing or assembly requirements. In addition, the redistribution layer 130 can also increase the degree of freedom in designing the electrode pattern of the magnetoelectric conversion unit 122.

[0116] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications or improvements can be made to the above embodiments. It will be clear from the claims that such modified or improved forms may also be included in the technical scope of the present invention.

[0117] It should be noted that the execution order of operations, procedures, steps, and stages in the apparatus, systems, programs, and methods shown in the claims, specifications, and drawings is not explicitly stated as "before," "prior to," etc., and that these can be implemented in any order unless the output of a previous process is used in a later process. Even if the operation flow in the claims, specifications, and drawings is described using phrases such as "first," "next," etc. for convenience, it does not mean that it is essential to perform the operations in that order. [Explanation of symbols]

[0118] 50 Rotating Bodies 60 circuit boards 60a,60b side 62 Magnets 63 Through hole 64,164,364 solder bumps 66 Metal Plating Layer 80 circuit boards 82 Adhesive layer 100, 200, 300 rotation angle detection system 110,310 semiconductor packages 110a,110b side 120,320 sealing layer 121,210,321 semiconductor chips 120a,120b,121a,121b side 122 Magnetoelectric conversion section 124,223,324 Sealing resin 124a,124b,223a,223b plane 125 Bonding Wire 126,128,224 resistors 130,330 redistribution layer 131 Conductive pattern layer 133,135,333,335 Insulating layer 130a,130b side 134,334 electrode pillars 134a,134b End 137 Seed Layer 139 Metal layer 141,143,145,147,151,153,155,157 Electrode 161,163,165,167,172,174 electrode 210a,210b plane 221 Magnetic Sensor 221a,221b plane 1221, 1222, 222 Magnetoelectric conversion section 225,226,228,229 electrode 270,272 lead frames 270a,270b plane 331 Conductive Pattern 340 Terminal section

Claims

1. A rotation angle detection system comprising a magnet and a rotating body containing a magnetic material and positioned opposite the magnet in a first direction, wherein the rotation angle of the rotating body is detected based on the change in the magnetic flux density generated from the magnet in response to the rotation of the rotating body, A semiconductor chip is disposed between the magnet and the rotating body, has a first electrode pattern, and detects the rotation angle of the rotating body. A first redistribution layer includes, in a plan view, a region that overlaps with at least a part of the first electrode pattern and a region that extends outside the semiconductor chip and does not overlap with the semiconductor chip, and includes a first conductive portion that is electrically connected to the first electrode pattern, A first electrode pillar is positioned opposite the side surface of the semiconductor chip at a distance from it and is electrically connected to the first conductive portion, The semiconductor chip and a part of the first electrode pillar are sealed with resin to form a first sealing layer, and the first sealing portion is provided. A semiconductor package in which the first redistribution layer and the first sealing layer are stacked, A substrate on which the aforementioned semiconductor package is mounted and Equipped with, A rotation angle detection system in which another portion of the first electrode pillar is exposed from the surface of the first sealing layer facing the substrate.

2. The rotation angle detection system according to claim 1, wherein the semiconductor chip comprises a magnetoelectric conversion unit.

3. The rotation angle detection system according to claim 2, wherein the magnetoelectric conversion unit is a magnetic sensor including a Hall element.

4. The rotation angle detection system according to claim 2, wherein the magnetoelectric conversion unit is a magnetic sensor including a magnetoresistive element.

5. The rotation angle detection system according to claim 2, wherein the semiconductor chip further comprises a signal processing circuit that processes the signal output from the magnetoelectric conversion unit.

6. The rotation angle detection system according to claim 4, wherein the magnetoresistive element includes at least one Wheatstone bridge circuit or half-bridge circuit.

7. The rotation angle detection system according to claim 4, wherein the magnetoresistive element includes at least one group of resistors comprising four resistors, the at least one group of resistors being electrically connected to the first redistribution layer and together with the first redistribution layer forming a Wheatstone bridge circuit.

8. The rotation angle detection system according to claim 1, wherein the distance between the first surface of the semiconductor chip facing the rotating body and the first surface of the semiconductor package facing the first surface of the semiconductor chip is 20 μm or less.

9. The rotation angle detection system according to claim 8, wherein the distance between the first surface of the semiconductor package and the rotating body is 100 μm or more.

10. The magnet is provided in a position that overlaps with the semiconductor package in the first direction. The rotation angle detection system according to claim 1.

11. The rotation angle detection system according to claim 1, wherein the substrate has a through hole or a recess on a second surface of the substrate opposite to the first surface on which the semiconductor package is mounted, at a position overlapping with at least a portion of the semiconductor package in the first direction, and the magnet is provided in the through hole or the recess.

12. A signal processing IC chip is positioned in a location overlapping with the semiconductor chip in a plan view, has a second electrode pattern, and processes the signal output from the semiconductor chip. A second redistribution layer includes a second conductive portion that is electrically connected to the second electrode pattern, and which, in a plan view, includes a region that overlaps with at least a part of the second electrode pattern and a region that extends outside the signal processing IC chip and does not overlap with the signal processing IC chip. A second electrode pillar is positioned opposite the side surface of the signal processing IC chip, spaced apart, in a position that overlaps with the first electrode pillar in a plan view, and is electrically connected to the second conductive portion. The system further comprises a second sealing portion that seals the signal processing IC chip and a part of the second electrode pillar to form a second sealing layer, The second redistribution layer and the second sealing layer are laminated together. The rotation angle detection system according to any one of claims 1 to 10, wherein the first electrode pillar and the second electrode pillar are electrically connected via a bump.

13. A semiconductor chip having a magnetoelectric conversion unit and a first electrode pattern, A first redistribution layer includes, in a plan view, a region that overlaps with at least a part of the first electrode pattern and a region that extends outside the semiconductor chip and does not overlap with the semiconductor chip, and includes a first conductive portion that is electrically connected to the first electrode pattern, A first electrode pillar is positioned opposite the side surface of the semiconductor chip at a distance from it and is electrically connected to the first conductive portion, The semiconductor chip and a part of the first electrode pillar are sealed with resin to form a first sealing layer, and the first sealing portion is provided. The first redistribution layer and the first sealing layer are laminated together. A semiconductor package in which the other portion of the first electrode pillar is exposed from the side opposite to the laminated side of the first redistribution layer of the first sealing layer.

14. Another portion of the first electrode pillar is exposed from a second surface opposite to the first surface of the semiconductor package that faces the first electrode pattern, The semiconductor package according to claim 13, wherein the semiconductor package further comprises a bump on the second surface of the semiconductor package that is electrically connected to the other part of the first electrode pillar.

15. The semiconductor package includes a magnet and a magnetic material, and is disposed between a rotating body that is positioned opposite the magnet in a first direction. The semiconductor package according to claim 13 or 14, wherein the semiconductor chip detects the rotation angle of the rotating body based on the change in the magnetic flux density generated from the magnet in response to the rotation of the rotating body.

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