Substrate susceptor assembly

Abstract

We provide an improved susceptor that can be used for a variety of applications. [Solution] A susceptor assembly that can be used for various applications is disclosed. An exemplary susceptor assembly 200 includes a base plate 202 having one or more cooling channels 222 formed therein, an electrical insulation plate 204 overlapping the base plate, a heater plate 206 overlapping the electrical insulation plate, and an upper plate 208 overlapping the heater plate. The heater plate can be configured as a plasma power electrode.

Description

Technical Field

[0001] The present disclosure generally relates to a gas-phase reactor system and its components. More specifically, the present disclosure relates to a susceptor assembly for supporting a substrate and providing various functions during processing of the substrate in a gas-phase reactor.

Background Art

[0002] Gas-phase reactors can be used for various applications such as chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), physical vapor deposition (PVD), atomic layer deposition (ALD), plasma-enhanced ALD (PEALD), degassing, pre-cleaning of substrates, etching, etc. For example, a gas-phase reactor can be used to deposit materials on a substrate, etch layers, and / or clean materials to form electronic devices such as semiconductor devices, flat panel display devices, photovoltaic devices, microelectromechanical systems (MEMS), and the like.

Summary of the Invention

Problems to be Solved by the Invention

[0003] A typical gas-phase reactor system includes one or more reactors, each reactor containing a reaction chamber, a susceptor assembly within the reaction chamber, and one or more gas sources fluidly connected to the reaction chamber. Typically, the design or configuration of the susceptor assembly used to support the substrate depends on the type of process. For example, a susceptor assembly used during a pre-cleaning and / or degassing process is typically configured differently from a susceptor assembly used in a plasma-enhancing process. Similarly, the configuration of a susceptor assembly used in a CVD process may differ from that of a susceptor assembly used in a PVD process. While these specialized susceptor designs work well for many applications, using such specialized designs can be relatively expensive and / or time-consuming, for example, when reconfiguring a gas-phase reactor for a different process. Furthermore, storing and / or replacing spare parts can be relatively expensive when using specially designed susceptors. Therefore, improved susceptor designs that can be used for a variety of applications are desirable. [Means for solving the problem]

[0004] Any consideration of problems and solutions described in this section is included in this disclosure solely for the purpose of providing context to this disclosure, and should not be construed as an acknowledgment that any or all of the considerations were prior art or known at the time the invention was made.

[0005] Various embodiments of this disclosure relate to susceptor assemblies and their components suitable for use in gas-phase reactor apparatus and systems, as well as reactor systems including susceptor assemblies. Exemplary susceptor assemblies can be used in various gas-phase processes and can be maintained relatively easily and inexpensively. While the ways in which various embodiments of this disclosure address the shortcomings of conventional susceptor assemblies will be discussed in more detail below, generally, various embodiments of this disclosure provide improved susceptor assemblies including various electrodes, heaters, and cooling channels for using susceptors in different processes such as plasma strengthening processes (e.g., PEALD or PECVD), PVD, pre-cleaning processes, degassing processes, and etching processes.

[0006] According to at least one embodiment of the present disclosure, a susceptor assembly includes a base plate having one or more cooling channels formed therein, an electrical insulation plate overlapping the base plate, a heater plate overlapping the electrical insulation plate, and an upper plate overlapping the heater plate. According to examples of these embodiments, the base plate and the electrical insulation plate have openings through each plate that can receive conduits, various connectors, wires, thermocouples, and / or other devices, which can be inserted into the openings and form part of the assembly. According to a further example, the assembly may include a bellows assembly. The bellows assembly may be connected to the base plate and / or a ground plate. According to a further example, the susceptor assembly includes a conductive tube electrically connected to the heater plate. The conductive tube may be located within the base plate opening and the insulation plate opening. The susceptor assembly may further include a plasma power supply electrically connected to the conductive tube. The conductive tube may be a metal conduit and a silver coating thereon, or may include a metal conduit and a silver coating thereon. Various plates can be joined to one or more adjacent plates, as will be described in more detail below. For example, plates can be joined together using a metal, such as a transition metal such as indium. The upper plate may include an electrostatic chuck electrode. At least one electrostatic chuck electrode of the electrostatic electrode may be electrically connected to an electrostatic chuck power supply. The electrostatic chuck power supply may be configured to chuck the substrate by applying a first electrostatic bias to the electrostatic electrode and to unchuck the substrate by applying a second opposite electrostatic bias to the electrostatic electrode. The heater plate is configured to function as or as a plasma power electrode. In an additional or alternative configuration, the heater plate may include one or more heaters at least partially embedded therein. The upper plate may be detachably attached to the heater plate. According to a further example, the heater plate may include a heater plate opening through which it passes.The heater plate opening can be fluidly connected to a cooling gas source to provide cooling gas near the upper plate.

[0007] According to additional embodiments of the present disclosure, the reactor system includes one or more reactors, at least one of which includes a susceptor assembly as described herein. The reactor system may additionally include one or more gas sources, vacuum sources, and controllers connected to one or more reactors.

[0008] Those skilled in the art will readily see these and other embodiments from the following detailed description of certain embodiments with reference to the accompanying drawings. The present invention is not limited to any one or more specific embodiments disclosed.

[0009] A more complete understanding of the exemplary embodiments of this disclosure can be obtained by referring to the “Modes for Carrying Out the Invention” and “Claims,” as considered in relation to the following exemplary figures. [Brief explanation of the drawing]

[0010] [Figure 1] This figure shows a reactor system according to at least one embodiment of the present disclosure. [Figure 2] These are exploded views of several examples of susceptor assemblies as described herein. [Figure 3] This figure shows cooling channels in a base plate according to several examples of the present disclosure. [Figure 4] This figure shows electrostatic chuck electrode patterns according to several examples of the present disclosure. [Figure 5] This figure shows other susceptor assemblies as multiple examples of the present disclosure. [Figure 6] These are cross-sectional views of several examples of susceptor assemblies in this disclosure. [Figure 7] These are top views of susceptor assemblies according to several examples of the present disclosure. [Figure 8]Figure 5 is a bottom view of a susceptor assembly, as shown in several examples of the present disclosure. [Modes for carrying out the invention]

[0011] Naturally, the elements in the figures are illustrated for simplicity and clarity and are not necessarily drawn to actual size. For example, the dimensions of some of the elements in the figures may be exaggerated relative to others to help improve understanding of the illustrated embodiments of this disclosure.

[0012] Although certain embodiments and examples are disclosed below, it will be understood that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention, as well as obvious modifications and equivalents thereof. Therefore, the scope of the disclosed invention is not intended to be limited by the specific disclosed embodiments described below.

[0013] This disclosure generally relates to susceptor assemblies suitable for use in gas-phase reactor systems, and reactor systems including susceptor assemblies. The susceptor assemblies and systems described herein can be used, for example, to process substrates such as semiconductor wafers for forming electronic devices.

[0014] The exemplary susceptor assemblies described herein can be used in a variety of processes, including CVD, ALD, plasma strengthening processes, etching processes, cleaning processes, and PVD. In other words, the same susceptor can be used for any combination of these processes or similar processes, for example. This may allow for relatively quick and inexpensive changes to the reactor configuration and relatively inexpensive storage of spare parts.

[0015] As used in this disclosure, the term "substrate" may refer to any underlying material or material, which may include and / or have material deposited thereon. A substrate may include a bulk material such as silicon (e.g., single-crystal silicon), another Group IV material such as germanium, or a composite semiconductor material such as GaAs, and may also include one or more layers overlapping or beneath the bulk material. For example, a substrate may include a patterning stack of several layers overlapping the bulk material. The patterning stack may vary depending on the application. Furthermore, a substrate may include various gaps formed on the surface of the substrate, such as recesses, vias, spaces between lines, trenches, and the like.

[0016] In this disclosure, the gas may include materials that are gases at room temperature and atmospheric pressure (NTP), vaporized solids, and / or vaporized liquids, and may consist of a single gas or a mixture of gases, depending on the situation. Gases other than process gases, i.e., gases introduced without passing through gas distribution assemblies, other gas distribution devices, or similar, may be used, for example, to seal reaction spaces, and may include sealing gases such as noble gases.

[0017] In this disclosure, any two numbers of a variable can constitute a practicable range of that variable, and any range shown may include or exclude endpoints. Furthermore, in some embodiments, any value of a shown variable (whether shown as approximately) may refer to an exact value or an approximation, and may include an equality, such as a mean, median, representative value, or mode, or the like. For example, the term approximately may refer to + / - 20, 10, 5, 2, or 1 percent of a value. Furthermore, in this disclosure, the terms “include,” “compose,” “constitute,” and “have” and their equivalents may, in some embodiments, independently refer to “typically or broadly include,” “essentially consist of,” or “consist of.” According to aspects of this disclosure, any defined meaning of a term does not necessarily exclude the ordinary and customary meanings of that term.

[0018] Now, looking at the drawings, Figure 1 illustrates a reactor system 100 according to at least one embodiment of the present disclosure. The reactor system 100 includes a reactor 102 which includes a reaction chamber 104, a gas distribution device 106, a susceptor assembly 108, gas sources 110-116, an exhaust source 118, a controller 120, a heater power supply 132, a plasma power supply 134, a cooling fluid source 136, and an electrostatic chuck power supply 138. Although one reactor 102 / reaction chamber 104 is shown, the reactor system 100 may include any preferred number of reaction chambers 104 and may optionally include one or more substrate handling systems.

[0019] The reactor 102 can be configured as a CVD reactor, a cyclic deposition process reactor (e.g., a cyclic CVD reactor), an ALD reactor, a PEALD reactor, a PVD reactor, a cleaning chamber, a degassing chamber, or the like, any of which may include a plasma device such as a direct plasma device and / or a remote plasma device. The reaction chamber 104 may be formed of a suitable material such as quartz, metal, etc., and may be configured to hold one or more substrates for processing. As will be described in more detail below, the susceptor assembly 108 can be used in any such reactor configuration. The susceptor assembly 108 enables the reactor 102 to be configured and easily reconfigured as desired (e.g., as a plasma or non-plasma reactor, with or without an electrostatic chuck, with or without cooling, etc.).

[0020] The reaction chamber 104 includes an upper chamber portion 124 and a lower chamber portion 126. The upper chamber portion 124 and the lower chamber portion 126 can be separated by an insulating plate 128. As an additional or alternative configuration, the upper chamber portion 124 may be above the upper surface 130 of the susceptor assembly 108, and / or the lower chamber portion 126 may be below the upper surface 130 of the susceptor assembly 108.

[0021] The gas distribution device 106 provides gas from one or more gas sources 110 - 114 to the upper chamber portion 124. By way of example, the gas distribution device 106 may be an assembly including a showerhead device, or may include an assembly including a showerhead device.

[0022] The susceptor assembly 108 can support the substrate to be processed and may be disposed below the gas distribution device 106. The susceptor assembly 108 may be connected to a movable shaft 109 that can move the susceptor assembly 108 from the processing position to the loading / unloading position, as described below.

[0023] Each of the gas sources 110 to 116 may include a container and reactants, precursors, or cooling gases stored in each container. For example, the first gas source 110 may include a container and a carrier gas, the second gas source 112 may include a container and a precursor for a deposition or etching process, the third gas source 114 may include a container and reactants, and the fourth gas source 116 may include a container and a cooling gas, such as argon, helium, a mixture of hydrogen and helium, neon, etc.

[0024] Any of the gas sources 110-116 may be connected to a remote plasma unit (RPU) 122 and / or bypass the RPU 122, or may be connected to a gas distribution device 106 or an upper chamber section 124. Furthermore, although the system is illustrated with four gas sources 110-116, the illustrated system may include any suitable number of gas sources (e.g., four or more) connected to the reaction chamber 104.

[0025] The exhaust source 118 may include, for example, one or more vacuum sources. Exemplary vacuum sources include one or more dry vacuum pumps and / or one or more turbomolecular pumps.

[0026] The controller 120 may be configured to perform various functions and / or processes as described herein. The controller 120 may include one or more microprocessors, memory elements, and / or switching elements to perform various functions. Although the controller 120 is shown as a single unit, it may alternatively include multiple devices. For example, the controller 120 can be used to control the gas flow from one or more gas sources 110-114 to the reaction chamber 104 during the process, the gas flow from the cooling gas source 116, a portion of the susceptor assembly 108, etc. Additional functions of the controller 120 are described in more detail below.

[0027] An insulating plate 128 can be used to control the gas flow between the upper chamber portion 124 and the lower chamber portion 126. The reactor 102 may also include one or more exhaust ports 140 (upper) and 142 (lower) on the upper surface 130.

[0028] Figure 2 illustrates exploded views of several examples of susceptor assemblies of the present disclosure. Susceptor assembly 200 can be used, for example, as susceptor assembly 108 within reactor system 100.

[0029] In the illustrated example, the susceptor assembly 200 includes a base plate 202, an electrical insulation plate 204, a heater plate 206, and an upper plate 208. The susceptor assembly 200 further includes a bellows assembly 210 and a grounding plate 211. As shown, the susceptor assembly 200 may also include one or more of the following: a heater power supply 212, a cooling gas source 214, a cooling fluid source 216, a plasma power supply 218, and an electrostatic chuck power supply 220.

[0030] The base plate 202 may be formed of any suitable material, such as a thermally conductive material. For example, the base plate 202 may contain or be formed of a metal such as aluminum, stainless steel, or copper. The base plate 202 may include one or more cooling channels 222 formed within the base plate 202 so that a cooling fluid, such as water or glycol-mixed water from a cooling fluid source 216, can flow through one or more cooling channels 222 to cool the susceptor assembly 200. The base plate 202 includes a base plate opening 224 through which various conduits and / or wires can flow, as will be discussed in more detail below. The diameter or similar cross-sectional dimension of the base plate 202 may be about 300 to about 400 mm. The height of the base plate 202 may be about 5 to about 25 mm.

[0031] Figure 3 shows a cross-sectional view of an exemplary base plate 300 suitable for use as a base plate 202. In this example, the base plate 300 includes a single cooling channel 304 with an inlet 306 and an outlet 308.

[0032] The electrical insulation plate 204 is positioned on the base plate 202. The electrical insulation plate 204 may be formed of any suitable electrical insulating material and thermal conductive material. For example, the electrical insulation plate 204 may contain or be formed of a ceramic material. Exemplary suitable ceramic materials include ceramic materials having a thermal conductivity of 30 W / mK or more. Such materials include alumina, alumina composites, aluminum silicon carbide, and aluminum nitride.

[0033] According to the examples of this disclosure, an electrical insulating plate 204 is bonded to a base plate 202. The electrical insulating plate 204 can be bonded to the base plate 202 using a thermally conductive bond such as indium, polymer, or aluminum. The bond allows for thermal conductivity between the plates and provides the integrity of the vacuum between the plates.

[0034] The electrical insulation plate 204 includes an insulation plate opening 226 through which it passes. Similar to the base plate opening 224, the insulation plate opening 226 may be configured to receive various conductors and / or conduits and / or other peripheral devices. However, the insulation plate opening 226 may be smaller than the base plate opening 224, since the insulation plate opening 226 does not need to receive conduits for the cooling fluid received within the base plate opening 224. In some cases, the diameter or other similar cross-sectional dimensions of the electrical insulation plate 204 may be the same as or similar to the diameter or other similar cross-sectional dimensions of the base plate 202. The height of the electrical insulation plate 204 may be in the range of approximately 5 mm to approximately 25 mm.

[0035] The heater plate 206 may be made of any suitable thermally conductive material. For example, the heater plate 206 may be made of a metallic material such as aluminum or stainless steel, or a ceramic material such as alumina or an alumina composite.

[0036] According to an example of the present disclosure, the heater plate 206 includes one or more (e.g., resistor) heaters 207 embedded in or on it (e.g., in a trench on the back). The heaters 207 may be made of, for example, stainless steel, other grades of steel, tungsten, etc. According to an example of the present disclosure, the heater plate 206 also functions as a plasma power electrode.

[0037] The heater plate 206 rests on the electrical insulation plate 204 and may be bonded to the electrical insulation plate 204 (for example, directly). The bonding can be done using the techniques and / or materials (for example, thermally conductive) described herein.

[0038] The heater plate 206 includes a heater plate opening 228 through which it passes. The heater plate opening 228 may be configured to receive various conduits and / or other peripheral devices. The heater plate opening 228 may be smaller than the insulating plate opening 226, so that the heater plate 228 does not need to receive various components such as conductors connected to the heater plate 206. In some cases, the diameter or other similar cross-sectional dimension of the heater plate 206 may be the same as or smaller than the diameter or other similar cross-sectional dimension of the electrical insulating plate 204. According to an example of the present disclosure, the heater plate opening 228 is fluidly connected to a cooling gas source 214 to provide cooling fluid near the upper plate 208 (e.g., on its underside).

[0039] The upper plate 208 may also be formed of a thermally conductive ceramic material. Exemplary upper plate materials include ceramics such as alumina and aluminum nitride.

[0040] The upper plate 208 overlaps the heater plate 206. The upper plate 208 can be joined to the heater plate 206 using the joining techniques and / or materials described herein. Alternatively, the upper plate 208 may be removably (e.g., mechanically) coupled to the heater plate 206.

[0041] Figure 4 shows a top view of an upper plate 400 suitable for use as an upper plate 208. The upper plate 400 includes a top surface 402 having electrostatic chuck electrodes 404 and 406 thereon. As shown, the electrostatic chuck electrodes 404 and 406, or at least a portion thereof, may be substantially separated by a certain distance. Furthermore, the electrostatic chuck electrodes 404 and 406 may form a substantial spiral on the top surface 402. Moreover, as shown, the electrostatic chuck electrodes 404 and 406 may include interlocking protrusions or fingers 408 and 410. The electrostatic chuck electrodes 404 and 406 may be formed of any suitable material, such as tungsten, a grade of chromium-rich steel, or molybdenum.

[0042] Referring again to Figure 2, the heater power supply 212 can include any suitable power supply. For example, the heater power supply 212 may include a current power supply. The heater power supply 212 may include a controller or be controlled by the controller 120. As shown, the heater power supply 212 may be electrically connected to one or more heaters 207 using conductive wires 234 in openings 224 and 226.

[0043] The cooling gas source 214 may include a container 215 and a cooling gas within it. Examples of cooling gases include inert gases such as argon, helium, a mixture of hydrogen and helium, and neon. The cooling gas from the cooling gas source 214 may be supplied, for example, through a conduit 230 and an opening 228 to the vicinity of the upper plate 208 (e.g., its underside).

[0044] The cooling fluid source 216 may contain a cooling fluid such as water or a glycol-mixed water. The cooling fluid source 216 may contain a container or be supplied from a continuous supply. The cooling fluid source 216 can be fluid-connected to one or more cooling channels 222 to supply cooling fluid to one or more cooling channels 222 which may be identical or similar to channel 304. The cooling fluid from the cooling fluid source 216 may be supplied to the cooling fluid channels via conduits (e.g., piping) 236. In some cases, one or more cooling channels 222 may form one or more circulation loops which can form one or more cooling regions within the base plate 202.

[0045] The plasma power supply 218 may be configured to provide appropriate plasma power to a heater plate 206 that can function as a plasma power electrode. As shown in the figure, the plasma power supply 218 can be electrically connected to the heater plate 206 and the conductive tube 232. The conductive tube 232 may be formed of any suitable material, such as a metal conduit (e.g., a copper pipe) having a silver coating thereon. The conductive tube 232 may be located within the base plate opening 224, as well as within the insulating plate opening 226 and the bellows assembly 210.

[0046] The bellows assembly 210 may be configured to provide a substantial gas seal between the base plate 202 and the grounding plate 211. The bellows assembly 210 may be connected to the base plate 202 using mechanical fasteners such as bolts. The bellows assembly 210 may also be mechanically fixed to the grounding plate 211 so that the bellows assembly 210 is electrically connected to the grounding plate 211.

[0047] The electrostatic chuck power supply 220 can be any suitable power supply, or may include any suitable power supply. For example, the electrostatic chuck power supply 220 is or includes a DC voltage power supply with polarity switching. According to an example of the present disclosure, at least one electrostatic chuck electrode of the electrostatic electrode (e.g., electrostatic chuck electrodes 404 and / or 406) is electrically connected to the electrostatic chuck power supply 220, for example, using a wire 238. In some cases, the electrostatic chuck power supply 220 is configured to apply a first electrostatic bias to the electrostatic electrode to chuck the substrate and to apply a second opposite electrostatic bias to the electrostatic electrode to unchuck the substrate.

[0048] Figures 5 to 8 show another susceptor assembly 500 by several examples of the present disclosure. The susceptor assembly 500 includes a base plate 502, an electrical insulation plate 504, and a heater plate 506. The susceptor assembly 500 also includes a bellows assembly 508 and a grounding plate 510. The susceptor assembly 500 may also include one or more of the heater power supply, cooling gas source, cooling fluid source, plasma power supply, and electrostatic chuck power supply, such as a heater power supply 212, a cooling gas source 214, a cooling fluid source 216, a plasma power supply 218, and an electrostatic chuck power supply 220, and the corresponding lines and conduits described above with reference to Figure 2. In the illustrated example, the susceptor assembly 500 also includes one or more thermocouples 612. The susceptor assembly 200 may similarly include one or more thermocouples and / or an upper plate, as described above with reference to Figures 2 and 4.

[0049] The base plate 502, bellows assembly 508, and grounding plate 510 may be the same as or similar to the base plate 202, bellows assembly 210, and grounding plate 211 described above with reference to Figure 2. For example, the base plate 502 may include a cooling channel 614 which may be the same as or similar to a cooling channel 222 which can be suitably coupled to a cooling fluid source 216 via a line such as a conduit 236.

[0050] The electrical insulation plate 504 can be formed from the same material as the electrical insulation plate 204 and may be similar to the electrical insulation plate 204, except that the electrical insulation plate 504 includes a central portion 602 and a peripheral portion 604. The central portion 602 may have a diameter of about 300 to about 325 mm. The outer diameter of the peripheral portion 604 may be about 330 to about 400 mm, and the inner diameter of the peripheral portion 604 may match the diameter of the central portion 602. The height of the central portion 602 may be about 5 mm to about 15 mm. The height of the peripheral portion 604 may be about 5 mm to about 25 mm.

[0051] The heater plate 506 may be the same as or similar to the heater plate 206 described above. For example, the heater plate 506 may include one or more (e.g., resistor) heaters 607 embedded in or on it (e.g., in a trench on the back side). The heaters 607 may be the same as or similar to the heater 207 described above. Furthermore, the heater plate 506 may function as a plasma power electrode. As illustrated, the heater plate 506 may include conductive bumps 512. The conductive bumps 512 may be formed of any suitable conductive material, such as the conductive materials described herein. The diameter of the conductive bumps 512 may be, for example, about 1.5 mm, and the height of the conductive bumps may be about 0.5 mm.

[0052] As described above, the susceptor assembly 500 may include an upper plate such as the upper plate 208 or 400 described above. The top may be positioned on the conductive bump 512.

[0053] As stated above, the exemplary embodiments of this disclosure do not limit the scope of the invention, as these embodiments are merely examples of embodiments of the invention. In fact, various modifications of this disclosure, in addition to those illustrated and described herein, such as alternative useful combinations of the elements described, may be apparent to those skilled in the art from the description. Such modifications and embodiments are also intended to be included within the scope of the appended claims. [Explanation of Symbols]

[0054] 100 Reactor System 102 Reactor 104 Reaction Chamber 106 Gas distribution devices 108 Susceptor Assembly 109 Movable shaft 110 First gas source 111 Gas sources 112 Second gas source 113 Gas sources 114 The third gas source 115 Gas sources 116. Fourth gas source, cooling gas source 118 Exhaust source 120 controllers 122 Remote Plasma Unit (RPU) 124 Upper chamber section 126 Lower chamber section 128 Insulating Plate 130 Top 132 Heater power supply 134 Plasma Power Supply 136 Cooling Fluid Source 138 Electrostatic Chuck Power Supply 140 exhaust ports 200 Suscepter Assembly 202 Base Plate 204 Electrical Insulation Plate 206 Heater Plate 207 Heater 208 Top plate 210 Bellows Assembly 211 Grounding plate 212 Heater power supply 214 Cooling gas source 215 Container 216 Cooling Fluid Source 218 Plasma Power Supply 220 Electrostatic Chuck Power Supply 222 cooling channels 224 Base plate opening 226 Insulation plate opening 228 Heater plate opening 230 Conduit 232 Conductive tube 234 Conductive wire 236 Conduit 238 wires 300 base plate 304 Cooling Channels 304 channels 306 Entrance 308 Exit 400 Top plate 402 Top surface 404 Electrostatic Chuck Electrode 406 Electrostatic Chuck Electrode 408 Finger 410 Finger 500 Suscepter Assembly 502 Base Plate 504 Electrical Insulation Plate 506 Heater Plate 508 Bellows Assembly 510 Grounding plate 512 Conductive bump 602 Central part 604 Peripheral area 607 Heater 612 Thermocouple 614 cooling channels

Claims

1. A base plate having one or more cooling channels formed within the base plate, An electrical insulating plate that overlaps the base plate, and having an insulating plate opening through which the electrical insulating plate passes, A heater plate overlapping the aforementioned electrical insulation plate, An upper plate that overlaps the heater plate, A susceptor assembly equipped with the following features.

2. The susceptor assembly according to claim 1, further comprising a cooling fluid source fluidly connected to one or more of the cooling channels.

3. The susceptor assembly according to claim 1, wherein the base plate is connected to the bellows assembly.

4. The susceptor assembly according to claim 3, wherein the bellows assembly is electrically connected to a grounding plate.

5. A conductive tube disposed within the base plate opening and the insulating plate opening, The susceptor assembly according to claim 1, comprising a plasma power supply electrically connected to the conductive tube.

6. The susceptor assembly according to claim 5, wherein the conductive tube comprises a metal conduit and a silver coating thereon.

7. The susceptor assembly according to claim 1, wherein the electrical insulating plate is bonded to the base plate using one or more of indium, polymer, or aluminum.

8. The susceptor assembly according to claim 1, wherein the heater plate is bonded to the electrical insulating plate using one or more of indium, polymer, or aluminum.

9. The susceptor assembly according to claim 1, wherein the upper plate is coupled to the heater plate.

10. The susceptor assembly according to claim 1, wherein the upper plate comprises a plurality of electrostatic chuck electrodes, and at least one of the plurality of electrostatic electrodes is electrically connected to an electrostatic chuck power supply.

11. The susceptor assembly according to claim 10, wherein the electrostatic chuck power supply is configured to chuck the substrate by applying a first electrostatic bias to the plurality of electrostatic electrodes, and to release the substrate by applying a second opposite electrostatic bias to the plurality of electrostatic electrodes.

12. The susceptor assembly according to claim 1, wherein the heater plate is configured as a plasma power electrode.

13. The susceptor assembly according to claim 1, wherein the heater plate includes one or more heaters embedded therein.

14. The susceptor assembly according to claim 1, wherein the electrical insulating plate comprises a ceramic material.

15. The susceptor assembly according to claim 14, wherein the ceramic material is selected from one or more of alumina, silicon aluminum carbide, or aluminum nitride.

16. The susceptor assembly according to claim 1, wherein the base plate includes metal.

17. The susceptor assembly according to claim 1, wherein the upper plate is detachably attached to the heater plate.

18. The susceptor assembly according to claim 1, wherein the heater plate has a heater plate opening through which it passes.

19. The susceptor assembly according to claim 18, wherein the heater plate opening is fluidly connected to a cooling fluid source to provide cooling fluid near the upper plate.

20. A reactor equipped with a reaction chamber, The susceptor assembly according to claim 1 inside the reactor, A vacuum source connected to the reaction chamber, A reactor system, including a reactor system.

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