Substrate processing apparatus and substrate processing method
Patent Information
- Application Number
- JP2025023598
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-02-17
- Publication Date
- 2026-08-27
AI Technical Summary
【0007】 本開示によれば、カップの水親和性の変化を検出するのに有利である。
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Figure 2026137468000001_ABST
Abstract
Description
Technical Field
[0006] , , , ,
[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.
Background Art
[0002] A substrate processing apparatus may include a cup that suppresses the scattering of a processing liquid from a substrate. For example, in the substrate processing apparatus of Patent Document 1, a chemical solution used to etch and remove an unnecessary film on the peripheral portion of a substrate is ejected toward the substrate, and the chemical solution scattered from the substrate is received by a liquid receiving cup.
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] The surface of the cup may be treated to be hydrophilic in order to reduce the rebounding of the received processing liquid onto the substrate. However, even in such a case, the surface of the cup may change its affinity for water to become hydrophobic due to the adhesion of components contained in the received processing liquid (for example, film components removed by etching).
[0005] The present disclosure provides a technique advantageous for detecting a change in the water affinity of a cup.
Means for Solving the Problems
[0006] One aspect of the present disclosure relates to a substrate processing apparatus for removing a portion of a substrate with a processing liquid, comprising: a substrate holding unit for rotatably holding the substrate; a processing liquid supply unit for applying the processing liquid to the substrate; a cup provided so as to surround the substrate holding unit and for receiving the processing liquid scattered from the substrate; and a foreign matter detector capable of detecting foreign matter floating inside the cup. [Effects of the Invention]
[0007] According to this disclosure, it is advantageous for detecting changes in the water affinity of a cup. [Brief explanation of the drawing]
[0008] [Figure 1] Figure 1 shows a schematic configuration of an example of a substrate processing system. [Figure 2] Figure 2 is a schematic longitudinal cross-sectional view showing the configuration of an example processing unit. [Figure 3] Figure 3 is a block diagram showing an example of a functional configuration related to the evaluation of the hydrophobicity (water affinity) of the liquid receiving cup (especially the upper cup). [Figure 4] Figure 4 is a schematic longitudinal cross-sectional view showing the configuration of the first modified example of the processing unit. [Figure 5] Figure 5 is a schematic longitudinal cross-sectional view showing the configuration of a second modified example of the processing unit. [Modes for carrying out the invention]
[0009] [Circuit board processing system] Figure 1 shows a schematic configuration of an example of substrate processing system 1. In the following, in order to clarify the positional relationships, the X, Y, and Z axes are defined as mutually orthogonal, and the positive Z-axis direction is defined as the vertically upward direction.
[0010] The substrate processing system 1 shown in Figure 1 includes an adjacent loading / unloading station 2 and a processing station 3.
[0011] The loading / unloading station 2 includes a carrier mounting section 11 and a transport section 12. Multiple carriers C, each holding multiple substrates (in this embodiment, semiconductor wafers (hereinafter referred to as "wafers") W) in a horizontal position, are mounted on the carrier mounting section 11.
[0012] The transport unit 12 is provided adjacent to the carrier mounting unit 11 and includes a substrate transport device 13 and a transfer unit 14 inside. The substrate transport device 13 is equipped with a wafer holding mechanism for holding wafers W, and is capable of moving horizontally and vertically, as well as rotating about the vertical axis, and uses the wafer holding mechanism to transport wafers W between the carrier C and the transfer unit 14.
[0013] The processing station 3 is located adjacent to the transport unit 12 and comprises a transport unit 15 and a plurality of processing units 16 arranged side by side on both sides of the transport unit 15.
[0014] The transport unit 15 includes a substrate transport device 17 inside. The substrate transport device 17 is equipped with a wafer holding mechanism for holding wafers W, and is capable of moving horizontally and vertically, as well as rotating about the vertical axis, and uses the wafer holding mechanism to transport wafers W between the transfer unit 14 and the processing unit 16.
[0015] Each processing unit 16 performs predetermined substrate processing on the wafer W transported by the substrate transport device 17.
[0016] The substrate processing system 1 also includes a control device 4. The control device 4 is configured, for example, by a computer and includes a control unit 18 and a storage unit 19. The storage unit 19 stores programs that control various processes performed in the substrate processing system 1. The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the programs stored in the storage unit 19.
[0017] The program stored in the memory unit 19 may be recorded on a computer-readable storage medium and installed from that storage medium into the memory unit 19 of the control device 4. Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magneto-optical disks (MO), memory cards, and the like.
[0018] In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading / unloading station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11 and places the taken-out wafer W on the delivery unit 14. The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16.
[0019] The wafer W carried into the processing unit 16 is processed by the processing unit 16, then carried out from the processing unit 16 by the substrate transfer device 17 and placed on the delivery unit 14. And the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13.
[0020] [Substrate processing apparatus] Next, an example of the processing unit 16 will be described.
[0021] The processing unit 16 described below is configured as a substrate processing apparatus that removes an unnecessary film (a part of the wafer W) from the wafer W with a processing liquid (chemical liquid and rinse liquid). The film removed from the wafer W by the processing liquid is basically not limited, but in this embodiment, it contains hydrophobic components in part or in whole and may contain, for example, metal. Here, the "substrate processing apparatus" is a concept that may include elements other than the processing unit 16 and may include other devices provided separately from the processing unit 16 (see, for example, the control device 4 (evaluation device 70) and the notification device 75 shown in FIG. 3 described later).
[0022] The multiple processing units 16 shown in Figure 1 may include two or more processing units 16 having different configurations and processing functions, and may also include processing units 16 having different configurations and processing functions from the processing unit 16 described below.
[0023] Figure 2 is a schematic longitudinal cross-sectional view showing an example configuration of the processing unit 16.
[0024] The processing unit 16 shown in Figure 2 comprises a chamber (housing) 20, a substrate holding and rotating mechanism 30, a processing fluid supply unit 40, and a liquid receiving cup 50, at least a portion of which is provided inside the chamber 20, and an FFU (Fan Filter Unit) 21 provided on the ceiling of the chamber 20. The FFU 21 forms a downflow airflow inside the chamber 20.
[0025] The substrate holding and rotating mechanism 30 comprises a substrate holding section 31 that holds the wafer W in a horizontal position and a rotation drive section 32 that rotates the substrate holding section 31 around the rotation axis Ax (vertical axis), and is configured as a substrate holding section that rotatably holds the substrate. The substrate holding section 31 is configured as a vacuum chuck that holds the wafer W by adsorbing the center of the back surface of the wafer W. The rotation drive section 32 is configured as an electric motor, and the upper end of the rotation shaft of the electric motor is connected to the vacuum chuck (substrate holding section 31). By operating the electric motor, the wafer W is rotated together with the substrate holding section 31 around the rotation axis Ax.
[0026] The processing fluid supply unit 40 includes a chemical solution supply unit 41, a rinse solution supply unit 42, and a gas supply unit 43, and supplies processing fluid (processing liquid and processing gas) to the peripheral edge of the wafer W.
[0027] The chemical solution supply unit 41 includes a chemical solution nozzle 41A, a chemical solution nozzle drive mechanism 41B, and a chemical solution supply mechanism 41C. The chemical solution nozzle 41A discharges the supplied chemical solution (e.g., etching solution) toward the wafer W (especially the peripheral edge). The chemical solution nozzle drive mechanism 41B is configured to move the chemical solution nozzle 41A between a processing position (a position for supplying the chemical solution to the wafer W) and a standby position, and to change the orientation (direction) of the chemical solution nozzle 41A. The chemical solution supply mechanism 41C supplies the chemical solution (e.g., etching solution) to the chemical solution nozzle 41A. Although not shown in detail, the chemical solution supply mechanism 41C includes piping (conduits) connected to a chemical solution supply source such as a factory pump or tank, and flow control devices (e.g., on-off valves, flow meters, and flow control valves, etc.) provided in the piping for processing the chemical solution in the piping.
[0028] The rinse liquid supply unit 42 includes a rinse nozzle 42A, a rinse nozzle drive mechanism 42B, and a rinse liquid supply mechanism 42C. The rinse nozzle 42A discharges the supplied rinse liquid (e.g., DIW) toward the wafer W (especially the peripheral edge). The rinse nozzle drive mechanism 42B is configured to move the rinse nozzle 42A between a processing position (a position for supplying rinse liquid to the wafer W) and a standby position, and to change the orientation (direction) of the rinse nozzle 42A. The rinse liquid supply mechanism 42C supplies rinse liquid (e.g., DIW) to the rinse nozzle 42A. Although not shown in detail, the rinse liquid supply mechanism 42C includes piping (conduit) connected to a rinse liquid supply source such as a factory pump or tank, and a flow control device (on-off valve, flow meter, flow control valve, etc.) provided in the piping for processing the rinse liquid in the piping.
[0029] The gas supply unit 43 includes a gas nozzle 43A, a gas nozzle drive mechanism 43B, and a gas supply mechanism 43C. The gas nozzle 43A discharges the supplied gas (e.g., nitrogen gas) toward the wafer W (especially the peripheral edge). The gas nozzle drive mechanism 43B is configured to move the gas nozzle 43A between a processing position (a position for supplying gas to the wafer W) and a standby position, and to change the orientation of the gas nozzle 43A. The gas supply mechanism 43C supplies gas (e.g., nitrogen gas) to the gas nozzle 43A. Details are not shown, but the gas supply unit 43C includes piping (conduits) connected to a gas supply source such as a factory gas supply or a gas cylinder, and flow control devices (on-off valves, flow meters, flow control valves, etc.) provided in the piping that process the gas in the piping.
[0030] The chemical nozzle 41A and the rinse nozzle 42A are configured as discharge sections having discharge ports that open diagonally downwards when in an upright position.
[0031] The chemical supply unit 41, the rinse liquid supply unit 42, and the gas supply unit 43 are not limited to the configuration shown in Figure 2, and can be configured in any way that can achieve the desired supply conditions for the processing fluid to the periphery of the wafer W. Such supply conditions for the processing fluid may include the incidence angle of the processing liquid (chemical solution and rinse liquid) and the discharge angle of the gas to the wafer W. To ensure that such supply conditions for the processing fluid are appropriately adjusted and met, for example, the nozzle drive mechanisms 41B, 42B, and 43B may be configured to adjust the attitude (orientation) of the nozzles 41A, 42A, and 43A based on a two-axis or multi-axis nozzle attitude control function.
[0032] Thus, the chemical solution supply unit 41 and the rinse solution supply unit 42 are provided as processing solution supply units that discharge and apply the processing solution toward the peripheral edge of the wafer W, and the gas supply unit 43 is provided as a processing gas supply unit that applies the processing gas to the wafer W.
[0033] Although the chemical supply unit 41, rinse liquid supply unit 42, and gas supply unit 43 are shown at different heights in Figure 2, they may actually be installed at different heights (relative heights) than those shown in Figure 2, or they may be installed at the same height.
[0034] The liquid receiving cup 50 is provided so as to surround the substrate holding rotation mechanism 30 (particularly the substrate holding portion 31) in the horizontal direction (X direction and Y direction), and is configured to receive and collect the processing liquid (chemical solution and rinse solution) that is scattered (detached) from the rotating wafer W. The liquid receiving cup 50 in this embodiment has an upper cup 50A having an annular cross-section and an under cup 50B in which at least a part is located below the upper cup 50A.
[0035] The upper cup 50A is supported by the second detector moving device 66 and moved vertically (height direction: Z direction) by the second detector moving device 66 (cup moving part) to be positioned in a lower position and an upper position above the lower position.
[0036] A portion of the upper cup 50A faces the wafer W (especially the peripheral portion) held by the substrate holding and rotating mechanism 30, and directly receives the processing liquid scattered from the wafer W. As a result, the upper cup 50A may bounce the received processing liquid back towards the wafer W, and the bounced processing liquid may adhere to the wafer W, forming particles on the wafer W. From the viewpoint of reducing such splashing of processing liquid, it is preferable that the surface of the upper cup 50A (especially the portion facing the wafer W) is hydrophilic, and the surface of the upper cup 50A in this embodiment is subjected to a hydrophilic treatment.
[0037] The under cup 50B has a bottom portion that is fixedly placed on the inner bottom surface of the chamber 20, and an upright portion that extends upward from the bottom portion and surrounds at least a part of the upper cup 50A (including the lower end portion) from the outside in the horizontal direction.
[0038] The bottom of the liquid receiving cup 50 (the under cup 50B in the example shown in Figure 2) is formed with a drain port (drainage section) 51 for draining liquid from the inside of the liquid receiving cup 50 and an exhaust port (exhaust section) 52 for exhausting air from the inside of the liquid receiving cup 50. The processed liquid collected by the liquid receiving cup 50 is discharged to the outside of the processing unit 16 through the drain port 51 (see "DR" in Figure 2). The atmosphere inside the liquid receiving cup 50 is sucked in through the exhaust port 52 and discharged to the outside of the processing unit 16 (see "EXH" in Figure 2). Along with the suction of the atmosphere (gas) inside the liquid receiving cup 50, the atmosphere in the space above the liquid receiving cup 50 (clean gas discharged from the FFU 21) is sucked into the liquid receiving cup 50 through the upper end opening of the liquid receiving cup 50 (upper cup 50A).
[0039] The processing unit 16 of this embodiment further includes a foreign matter detector 60. The foreign matter detector 60 can detect foreign matter floating inside the liquid receiving cup 50 (upper cup 50A in this example).
[0040] The term "foreign matter" as used herein can take any state and may be a liquid, solid, gas, or a mixture of two or more of these. In this embodiment, it may include mist of the processing liquid and gas (moisture: humidity) of the processing liquid that bounces back from the upper cup 50A.
[0041] The foreign matter detector 60 is provided separately from the processing liquid supply unit (chemical liquid supply unit 41 and rinse liquid supply unit 42), and can detect foreign matter without interfering with the supply of processing liquid to the wafer W by the processing liquid supply units 41 and 42. Therefore, the foreign matter detector 60 can also detect foreign matter while the processing of removing the film from the periphery of the wafer W is being carried out by the processing liquid discharged by the processing liquid supply units 41 and 42.
[0042] From the viewpoint of accurately evaluating the hydrophobicity (water affinity) of the liquid receiving cup 50 (upper cup 50A), as described later, the foreign matter detector 60 is preferably installed near the peripheral edge of the wafer W (especially near the processing liquid supply units 41 and 42 (nozzles 41A and 42A)).
[0043] The foreign object detector 60 of this embodiment includes a particle counter 61 (particle sampling tube) for detecting particles and a humidity sensor 62 for detecting humidity.
[0044] The particle counter 61 shown in Figure 2 is supported and movable by a first detector moving device 65, and detects fine particles (number of fine particles) of a mist-like processing liquid that has a relatively large diameter and is floating in the air. The first detector moving device 65 can move the particle counter 61 to a retracted position (not shown) that does not interfere with the introduction, insertion, and installation of the wafer W to the substrate holding rotation mechanism 30, and a measurement position (see Figure 2) for measuring particles floating near the wafer W. As shown in Figure 2, the particle counter 61 placed in the measurement position is positioned on the center side (rotation axis Ax side) of the wafer W and above the wafer W, compared to the nozzles 41A and 42A of the processing liquid supply units 41 and 42 that discharge the processing liquid.
[0045] On the other hand, the humidity sensor 62 in this embodiment is attached to the liquid receiving cup 50 (especially the upper cup 50A) near the processing liquid supply units 41 and 42 (nozzles 41A and 42A), and moves in the height direction (Z direction) together with the upper cup 50A. Therefore, the humidity sensor 62 is positioned at a lower position relatively close to the wafer W (especially the peripheral portion) held by the substrate holding and rotating mechanism 30, and at an upper position that is above the lower position and relatively far from the wafer W (especially the peripheral portion) held by the substrate holding and rotating mechanism 30. In the example humidity sensor 62 shown in Figure 2, at both the upper and lower positions, the humidity of the measurement space located above the upper surface (processing surface) of the wafer W is measured.
[0046] Figure 3 is a block diagram showing an example of a functional configuration related to the evaluation of the hydrophobicity (water affinity) of the liquid receiving cup 50 (especially the upper cup 50A).
[0047] As a result of diligent research, the inventors of this case have newly discovered that when the processing liquid scattered from the wafer W adheres to the surface of the upper cup 50A (especially when it dries), the surface of the upper cup 50A becomes hydrophobic, and the splashing of the processing liquid gradually increases.
[0048] The substrate processing apparatus described above further includes an evaluation apparatus 70 that evaluates the hydrophobic state (water affinity state) of the liquid receiving cup 50 (particularly the upper cup 50A) based on the detection results of the foreign matter detector 60.
[0049] Generally, when the surface of the upper cup 50A is hydrophilic, the processing liquid scattered from the wafer W and caught by the upper cup 50A tends to be relatively less likely to splash back (splashback) within the upper cup 50A. Therefore, when the surface of the upper cup 50A is hydrophilic, the presence of foreign matter (airborne particles such as mist) in the processing liquid floating near the wafer W tends to be low. On the other hand, when the surface of the upper cup 50A is hydrophobic, the processing liquid scattered from the wafer W and caught by the upper cup 50A tends to splash back (splashback) within the upper cup 50A. Therefore, when the surface of the upper cup 50A is hydrophobic, the presence of foreign matter (airborne particles such as mist) in the processing liquid floating near the wafer W tends to be high.
[0050] Therefore, when the water affinity of the surface of the upper cup 50A gradually changes from hydrophilic to hydrophobic, the proportion of foreign matter in the processing liquid floating near the wafer W tends to gradually increase. Thus, the evaluation device 70 can evaluate the hydrophobic state (water affinity state) of the liquid receiving cup 50 (especially the upper cup 50A) based on the detection results of the foreign matter detector 60, which measures particles and humidity in the processing liquid near the wafer W.
[0051] Furthermore, evaluating "hydrophobicity" is essentially synonymous with evaluating "hydrophilicity," and by extension, it is essentially synonymous with evaluating "water affinity."
[0052] The specific evaluation method using the evaluation device 70 is not limited.
[0053] For example, if the number of particles detected by the particle counter 61 exceeds a predetermined threshold, and / or the humidity detected by the humidity sensor 62 exceeds a predetermined threshold, the evaluation device 70 may evaluate that the liquid receiving cup 50 (upper cup 50A) is hydrophobic. As an example, if the number of particles detected by the particle counter 61 at the measurement position exceeds 100 pcs / L for a predetermined number of consecutive times (e.g., 3 times), the evaluation device 70 may evaluate that the liquid receiving cup 50 (upper cup 50A) is hydrophobic.
[0054] The evaluation device 70 may also evaluate the hydrophobic state (water affinity state) of the liquid receiving cup 50 (upper cup 50A) based on the variation in the detection result of the foreign matter detector 60 due to the variation in the distance of the foreign matter detector 60 from the wafer W. Generally, when the liquid receiving cup 50 is hydrophilic, the splashing of the processing liquid from the liquid receiving cup 50 is small, so the difference between the humidity of the space near the wafer W and the humidity of the space away from the wafer W tends to be relatively large. On the other hand, when the liquid receiving cup 50 is hydrophobic, the splashing of the processing liquid from the liquid receiving cup 50 is large, the processing liquid tends to linger even in the space away from the wafer W, and the difference between the humidity of the space near the wafer W and the humidity of the space away from the wafer W tends to be relatively small.
[0055] Therefore, if the liquid receiving cup 50 is hydrophilic, the difference (amount of change) between the humidity measured at the upper position and the humidity measured at the lower position of the humidity sensor 62 is large, and the absolute value of the first derivative of the measurement result of the humidity sensor 62 tends to increase at the timing of switching between the upper and lower positions. On the other hand, if the liquid receiving cup 50 is hydrophobic, the difference between the humidity measured at the upper position and the humidity measured at the lower position of the humidity sensor 62 is small, and the absolute value of the first derivative of the measurement result of the humidity sensor 62 tends not to increase much even at the timing of switching between the upper and lower positions.
[0056] Based on these phenomena, the humidity sensor 62 may be moved up and down together with the upper cup 50A so as to be positioned in both the lower and upper positions, and may continuously measure humidity. That is, the humidity sensor 62 may acquire a "continuous humidity measurement" that includes both the humidity measurement at the lower position and the humidity measurement at the upper position. The evaluation device 70 then performs the first derivative of the "continuous humidity measurement" acquired by the humidity sensor 62 to obtain a derivative value, and if the absolute value of the derivative does not exceed a threshold, the evaluation device 70 may evaluate that the liquid receiving cup 50 (upper cup 50A) is hydrophobic. On the other hand, if the absolute value of the derivative is greater than or equal to the threshold, the evaluation device 70 may evaluate that the liquid receiving cup 50 (upper cup 50A) is hydrophilic.
[0057] The substrate processing apparatus of this embodiment further includes a notification device 75 that notifies the evaluation results of the evaluation device 70 based on the detection results of the foreign matter detector 60 (particle counter 61 and humidity sensor 62). The notification device 75 can take any configuration that enables it to notify the operator (user) of the detection results of the foreign matter detector 60 (and consequently the evaluation results of the water affinity state of the liquid receiving cup 50) through sight, hearing, etc., and typically includes a display and a speaker.
[0058] If the evaluation result of the evaluation device 70 is unsatisfactory (i.e., the upper cup 50A is evaluated as hydrophobic), the notification device 75 will notify the operator (user) and, if necessary, issue an alert to draw the operator's attention. On the other hand, if the evaluation result of the evaluation device 70 is satisfactory (i.e., the upper cup 50A is evaluated as hydrophilic), the notification device 75 may also notify the operator. However, if the evaluation result of the evaluation device 70 is satisfactory and does not interfere with the operation of the processing unit 16 (and consequently the operation of the substrate processing system 1), the notification device 75 does not need to proactively notify the operator.
[0059] In the example shown in Figure 3, the control device 4 (see Figure 1) functions as the evaluation device 70, and the notification device 75 is provided separately from the control device 4 (evaluation device 70). However, the evaluation device 70 and the notification device 75 can have any configuration. For example, the evaluation device 70 may be provided separately from the control device 4, the notification device 75 may be configured as part of the control device 4, or the evaluation device 70 and the notification device 75 may be provided as an integrated unit.
[0060] [Substrate Processing Method] Next, an example of a substrate processing method performed by the substrate processing apparatus described above (in particular, a method for evaluating the hydrophobic state (water affinity state) of the liquid receiving cup 50 (upper cup 50A)) will be explained. The example of the substrate processing method described below is executed by appropriately driving each part of the substrate processing system 1 (including the processing unit 16) under the control of the control device 4.
[0061] The substrate processing method of this embodiment, which removes a film from the wafer W (especially the peripheral portion) using a processing liquid, includes a processing liquid application step, a foreign matter detection step, and a cup state evaluation step.
[0062] In the processing solution application step, processing solutions (chemical solution and rinse solution) are applied to the wafer W, which is rotatably held by the substrate holding rotation mechanism 30, by processing solution supply units 41 and 42. The timing of discharge of the chemical solution from the chemical solution supply unit 41 and the timing of discharge of the rinse solution from the rinse solution supply unit 42 are not limited and are determined according to a pre-prepared recipe to achieve the desired substrate processing.
[0063] In the foreign matter detection process, foreign matter floating inside the upper cup 50A, which receives the processing liquid scattered from the wafer W, is detected by the foreign matter detector 60 (particle counter 61 and humidity sensor 62). The foreign matter detector 60 (particle counter 61 and humidity sensor 62) continuously and repeatedly measures the foreign matter and transmits the measurement results to the evaluation device 70 (control device 4 in this embodiment).
[0064] In the cup condition evaluation process, the hydrophobic state (water affinity state) of the upper cup 50A is evaluated by the evaluation device 70 based on the measurement results of the foreign matter detector 60 (particle counter 61 and humidity sensor 62). The control device 4 then transmits a control signal to the notification device 75 based on the evaluation results of the evaluation device 70, and the notification device 75 notifies the operator (user) of the evaluation results of the evaluation device 70 based on the control signal.
[0065] In this embodiment, the processing liquid application step, the foreign matter detection step, and the cup condition evaluation step are performed simultaneously, but it is not necessarily required that they be performed simultaneously.
[0066] As described above, the substrate processing apparatus and substrate processing method of this embodiment allow for the detection of changes in the water affinity state of the liquid receiving cup 50 (upper cup 50A) within the module. Therefore, in-plane defects on the wafer W caused by the hydrophobicity of the upper cup 50A, such as particle generation on the wafer W due to splashing of processing liquid from the upper cup 50A, can be detected in advance or at an early stage. As a result, it is possible to inform the operator (user) of the timing for replacing the upper cup 50A, etc., via the notification device 75 before product damage caused by the hydrophobicity of the upper cup 50A occurs.
[0067] Conventionally, the hydrophobicity of the upper cup 50A could only be detected after product damage had occurred. However, according to the substrate processing apparatus and substrate processing method of this embodiment described above, the change from hydrophilicity to hydrophobicity of the upper cup 50A can be inferred based on the detection results of the foreign matter detector 60, so that the hydrophobicity of the upper cup 50A can be detected before significant product damage occurs. In this way, by detecting the change to hydrophobicity of the upper cup 50A before in-plane defects of the wafer W occur, it is possible to prevent product damage from occurring and, consequently, improve yield.
[0068] Furthermore, according to this embodiment, instead of uniformly replacing the upper cup 50A during regular maintenance, it is possible to notify the operator at an appropriate time according to the actual condition of the upper cup 50A and encourage maintenance replacement of the upper cup 50A.
[0069] Furthermore, the foreign matter detector 60 of this embodiment detects the hydrophobic state of the upper cup 50A based on a combination of airborne particles detected by the particle counter 61 and humidity detected by the humidity sensor 62. In this way, the foreign matter detector 60 can accurately detect changes in the water affinity (hydrophobicity) of the upper cup 50A by combining the detection results of multiple types of sensors 61 and 62 that detect different objects. In this embodiment, the foreign matter detector 60 is provided with two types of sensors 61 and 62 that detect foreign matter (processing liquid), but as shown in the modified examples described later, only one type of sensor may be provided, or three or more types of sensors that detect different objects may be provided.
[0070] Furthermore, the processing unit 16 shown in Figure 2 above is configured as a module for cleaning the bevel of the wafer W, and locally discharges a relatively small amount of processing liquid toward the periphery of the wafer W. Therefore, while the processing unit 16 is operating in a healthy state, the processing liquid (mist, etc.) floating near the wafer W is basically almost entirely discharged toward the exhaust port 52 and is inherently difficult to detect by the foreign matter detector 60. For this reason, the processing unit 16 shown in Figure 2 above has an apparatus configuration and processing configuration suitable for evaluating the hydrophobicity of the upper cup 50A based on the detection results of the foreign matter detector 60.
[0071] In conventional single-wafer processing units 16 that discharge a large amount of processing liquid over the entire surface of the wafer W, the processing liquid (mist, etc.) tends to float around the vicinity of the wafer W regardless of whether the processing unit 16 (especially the liquid receiving cup 50 (upper cup 50A)) is in good condition or not. Therefore, such conventional single-wafer processing units 16 are not very suitable for evaluating the hydrophobicity of the upper cup 50A based on the detection results of the foreign matter detector 60 mentioned above.
[0072] [First variation] In this modified example, elements identical or corresponding to those in the above-described embodiment (see Figures 1 to 3) are denoted by the same reference numerals, and their detailed descriptions are omitted.
[0073] Figure 4 is a schematic longitudinal cross-sectional view showing the configuration of a first modified example of the processing unit 16.
[0074] In the modified example shown in Figure 4, a lifting member 63 is provided that is supported by the third detector moving device 67 and is driven by the third detector moving device 67 to move in the height direction (Z direction).
[0075] The lifting member 63 can have any shape, configuration, and function. For example, the lifting member 63 may be configured as a flow straightening member that covers a portion of the wafer W from above to straighten the airflow toward the exhaust port 52. The lifting member 63 may extend near the upper end of the upper cup 50A to cover almost the entire peripheral edge of the wafer W held by the substrate holding rotation mechanism 30, to the extent that it does not obstruct the application of processing liquid from the processing liquid supply units 41 and 42 to the wafer W.
[0076] In this modified example, the foreign object detector 60 is attached to the lifting member 63 and moves with the lifting member 63 in the height direction (Z direction), and is positioned at both the lower and upper positions. That is, the foreign object detector 60 moves up and down with the lifting member 63 so as to be positioned at both the lower and upper positions, continuously detecting foreign objects and transmitting the detection results to the evaluation device 70 (control device 4; see Figure 3). In Figure 4, for convenience of illustration, the foreign object detector 60 is shown on the opposite side from the processing liquid supply units 41 and 42, but it is preferable that it be provided near the processing liquid supply units 41 and 42 (nozzles 41A and 42A).
[0077] In this modified example, the foreign object detector 60 may consist of only one of the particle counter 61 and humidity sensor 62 of the above-described embodiment, or both, and the particle counter 61 and humidity sensor 62 may be attached to the lifting member 63 as the foreign object detector 60.
[0078] In this modified example, the evaluation device 70 (see Figure 3) can also evaluate the hydrophobic state (water affinity state) of the upper cup 50A based on the variation in the detection result of the foreign matter detector 60 due to the variation in the distance of the foreign matter detector 60 from the wafer W, similar to the embodiment described above.
[0079] [Second variation] In this modified example, elements that are the same as or corresponding to those in the above-described embodiment (see Figures 1 to 3) or the first modified example (see Figure 4) are denoted by the same reference numerals, and their detailed descriptions are omitted.
[0080] Figure 5 is a schematic longitudinal cross-sectional view showing the configuration of a second modified example of the processing unit 16.
[0081] In the modified example shown in Figure 5, the foreign object detector 60 is provided with a first foreign object detection sensor 60A that detects foreign objects floating inside the upper cup 50A, and a second foreign object detection sensor 60B that detects foreign objects floating at a position further from the wafer W than the first foreign object detection sensor 60A. The first foreign object detection sensor 60A is fixedly supported by a support (not shown) at a lower position. The second foreign object detection sensor 60B is fixedly supported by a support (not shown) at an upper position. In Figure 5, for convenience of illustration, the first foreign object detection sensor 60A and the second foreign object detection sensor 60B are shown on the opposite side from the processing liquid supply units 41 and 42, but it is preferable that they be provided in the vicinity of the processing liquid supply units 41 and 42 (nozzles 41A and 42A).
[0082] The evaluation device 70 evaluates the hydrophobic state of the liquid receiving cup 50 (upper cup 50A) based on the detection results of the first foreign object detection sensor 60A and the detection results of the second foreign object detection sensor 60B.
[0083] In relation to the embodiments shown in Figures 1 to 3 above, an example has been described in which the hydrophobic state of the upper cup 50A is evaluated based on the detection results at both the upper and lower positions of the humidity sensor 62 (foreign object detector 60) which moves up and down together with the upper cup 50A. In this modified example, instead of detecting foreign objects at both the upper and lower positions by moving the foreign object detector 60, the first foreign object detection sensor 60A detects foreign objects at the lower position, and the second foreign object detection sensor 60B detects foreign objects at the upper position. Therefore, in this modified example as well, the hydrophobic state of the upper cup 50A can be appropriately evaluated based on the results of foreign object detection at the lower position and the results of foreign object detection at the upper position, similar to the example described above.
[0084] It should be noted that the embodiments and modifications disclosed herein are illustrative in all respects and should not be construed restrictively. The embodiments and modifications described herein may be omitted, substituted, and modified in various ways without departing from the scope and spirit of the appended claims. Other equivalent elements may be used instead of the elements described herein, and embodiments in which other equivalent elements are used as substitutes, even if such other equivalent elements are not explicitly stated herein, are also included within the scope of this disclosure. For example, the embodiments and modifications described herein may be combined in whole or in part, and other embodiments may be combined with the embodiments or modifications described herein. Furthermore, the effects described herein are illustrative, and other effects may result.
[0085] The technical categories that embody the above-described technical concept are not limited. For example, the above-described technical concept may be embodied by a computer program that causes a computer to execute one or more steps included in a method for manufacturing or using the above-described device. Alternatively, the above-described technical concept may be embodied by a computer-readable, non-transitory recording medium on which such a computer program is recorded. [Explanation of Symbols]
[0086] 16 Processing Units 30. Substrate holding and rotating mechanism 41 Chemical Solution Supply Unit 42 Rinse liquid supply unit 50 liquid receiving cups 50A Upper Cup 60 Foreign object detector W wafer
Claims
1. A substrate processing apparatus for removing a portion of a substrate using a processing liquid, A substrate holding section that rotatably holds the substrate, A processing liquid supply unit that applies the processing liquid to the substrate, A cup is provided so as to surround the substrate holding portion and to receive the processing liquid that splashes from the substrate, A foreign object detector capable of detecting foreign objects floating inside the cup, A substrate processing apparatus equipped with the following:
2. The aforementioned foreign matter includes mist of the processing liquid that has splashed back from the cup. The substrate processing apparatus according to claim 1.
3. The foreign object detector has a particle counter for detecting particles. The substrate processing apparatus according to claim 1.
4. The foreign object detector has a humidity sensor for detecting humidity. The substrate processing apparatus according to claim 1.
5. The device includes an evaluation apparatus that evaluates the hydrophobic state of the cup based on the detection results of the foreign matter detector. The substrate processing apparatus according to claim 1.
6. The processing liquid supply unit discharges the processing liquid toward the peripheral edge of the substrate. The substrate processing apparatus according to claim 1.
7. The foreign matter detector comprises a detection unit located on the central side of the substrate, relative to the discharge unit that discharges the processing liquid, and positioned above the substrate. The substrate processing apparatus according to claim 1.
8. The portion of the substrate removed by the processing liquid contains metal, The substrate processing apparatus according to claim 1.
9. The foreign matter detector detects the foreign matter while the substrate is being processed with the processing liquid. The substrate processing apparatus according to claim 1.
10. A cup moving unit for moving the aforementioned cup, An exhaust section for exhausting air from the inside of the cup, The device includes an evaluation apparatus that evaluates the hydrophobic state of the cup based on the detection results of the foreign matter detector, The foreign object detector is attached to the cup and moves together with the cup. The evaluation device evaluates the hydrophobic state of the cup based on the variation in the detection result of the foreign object detector due to the variation in the distance of the foreign object detector from the substrate. The substrate processing apparatus according to claim 1.
11. An exhaust section for exhausting air from the inside of the cup, The device includes an evaluation apparatus that evaluates the hydrophobic state of the cup based on the detection results of the foreign matter detector, The foreign object detector includes a first foreign object detection sensor that detects foreign objects floating inside the cup, and a second foreign object detection sensor that detects foreign objects floating at a position further from the substrate than the first foreign object detection sensor. The evaluation device evaluates the hydrophobic state of the cup based on the detection result of the first foreign object detection sensor and the detection result of the second foreign object detection sensor. The substrate processing apparatus according to claim 1.
12. A lifting member that is driven to move in the height direction, An exhaust section for exhausting air from the inside of the cup, The device includes an evaluation apparatus that evaluates the hydrophobic state of the cup based on the detection results of the foreign matter detector, The foreign object detector is attached to the lifting member and moves together with the lifting member. The evaluation device evaluates the hydrophobic state of the cup based on the variation in the detection result of the foreign object detector due to the variation in the distance of the foreign object detector from the substrate. The substrate processing apparatus according to claim 1.
13. The system includes a notification device that provides notification based on the detection results of the foreign object detector. The substrate processing apparatus according to claim 1.
14. A substrate processing method that removes a portion of the substrate using a processing solution, A step of applying the processing liquid to the substrate which is rotatably held by the substrate holding part, A step of detecting foreign matter floating inside a cup that is provided so as to surround the substrate holding portion and receives the processing liquid scattered from the substrate, A substrate processing method including the following.
Citation Information
Patent Citations
Substrate processing apparatus and substrate processing method
JP2021057412A