Substrate welding method and welded substrate

Abstract

The present invention relates to a method for welding substrates, the method comprising: bringing a first substrate and a second substrate into contact with each other such that a contact area is formed between the two substrates; introducing at least two outer weld lines into the first and second substrates, the outer weld lines extending adjacent to each other within the contact area, such that the first and second substrates are welded together by each of the outer weld lines and a dicing area is defined between the two outer weld lines; and introducing one or more inner weld lines into at least one of the two substrates, the inner weld lines extending between the two outer weld lines within the dicing area. The present invention further relates to the welded substrates and the singulated chips, particularly hermetically sealed enclosures.

Description

[Technical Field]

[0001] The present invention relates to a method for welding substrates, for example glass substrates, by introducing a weld seam into the contacting substrates. The present invention further relates to welding substrates and singulated chips, in particular hermetically sealed enclosures.

[0002] Singulated chips designed as hermetically sealed enclosures can be mass-produced in a multi-step process. For example, two substrates in the form of larger wafers can be brought into contact, defining functional areas and intermediate areas between the functional areas. Typically, stacked substrates are in contact at least in the intermediate area. The functional areas may be designed, for example, as cavities holding functional elements or as specific surface areas of the wafer.

[0003] Before the stacked substrates are diced into singulated chips, pairs of adjacent weld lines may be introduced into the intermediate region, with each weld line forming a hermetic bond between two substrates. Dicing of the substrate stack into singulated chips can then be performed between each pair of adjacent weld lines, so that each singulated chip ultimately retains one perimeter weld line that hermetically seals the functional area of ​​the singulated chip. Dicing of such substrate stacks can be performed using various methods.

[0004] For example, a substrate may be cut with a saw blade, but if the saw blade gets between a pair of adjacent weld lines, the saw blade may come into contact with the weld lines, which can compromise the hermeticity of the tip and cause uneven wear of the saw blade.

[0005] Another exemplary method of dicing may be to scribe and then break between pairs of adjacent weld lines, however this can result in unclean break edges and chipping.

[0006] Another exemplary dicing method may be to first pre-separate the substrate by introducing laser perforations into the substrate, and then etch the substrate along the pre-separation lines. However, this may result in uneven etching rates or the etchant reaching the bonding interface. Instead of etching, the pre-separation lines may be separated by breaking, but this may also result in unclean break edges or chipping.

[0007] The object of the present invention is to improve the welding process of substrates and / or the processing into singulated chips and the singulated chips themselves, in particular to reduce or avoid the above-mentioned problems. One object is to achieve improved edges of the singulated chips, in particular improved edge strength. Another object is to prevent uneven wear of the saw blade when dicing is performed with a saw blade, thereby extending the saw blade's life. Another object is to achieve more precise break edges and avoid chipping when dicing is performed by mechanical means. Another object of the present invention is to prevent the etchant from reaching the bonding interface when dicing is performed by etching, thereby achieving a more uniform etching rate.

[0008] To solve this object, the present invention discloses a method for welding substrates, in which a first and a second substrate are brought into contact with each other so that a contact area is formed between the two substrates.

[0009] Furthermore, at least two outer weld lines extending adjacent to each other within the contact area are introduced into the first and second substrates, whereby the first and second substrates are welded together by each of the outer weld lines, and a dicing area is defined between the two outer weld lines.

[0010] Additionally, four or more inner weld lines are introduced into at least one of the two substrates extending between the two outer weld lines within the dicing area.

[0011] The four or more inner weld lines do not necessarily weld the first and second substrates together, but may extend within the volume of the substrates, however, as will be explained in more detail below, it may be preferable that the inner weld lines, or at least one or some of them, also weld the first and second substrates together.

[0012] The first and second substrates that are brought into contact with each other may be two individual substrates, for example a top substrate of the substrate stack to be formed and another substrate of the substrate stack to be formed, for example a bottom substrate if the substrate stack consists of only two substrates, or an inner substrate such as a spacer substrate if the substrate stack includes more than two substrates.

[0013] The first and second substrates to be contacted may be individual substrates and outer substrates of an existing substrate stack. It may also be the case that both the first and second substrates to be contacted are outer substrates of an already existing substrate stack.

[0014] Preferably, the first substrate is an integrally formed individual substrate. The second substrate may be an integrally formed individual substrate or may be an outer substrate of an assembled substrate stack comprising one or more substrates.

[0015] In some embodiments of the present invention, the method may further include dicing the welding substrate into a plurality of singulated chips by cutting the welding substrate within the dicing area. Preferably, the cutting may be performed on at least one of the inner welding lines extending within the dicing area.

[0016] The inner weld line in the dicing area has several advantages, which are counterintuitive because contact or imminent contact with the weld line during dicing is typically undesirable. It is particularly surprising that the presence of the inner weld line is beneficial to the different processes of dicing, so that the welding of the substrate can be further optimized with subsequent dicing in mind, but independent of the particular dicing method that will be used at that stage. Furthermore, surprisingly, the presence of the inner weld line in the dicing zone is not detrimental to separation, and thus increased processing actually reduces the structural differences between the non-intersection and intersection zones.

[0017] According to one exemplary dicing method, cutting the weld substrate may be performed by a saw blade, preferably the saw blade gripping at least one of the inner weld lines extending into the dicing area.

[0018] In this case, the saw blade may wear more evenly due to the inner weld line in the dicing area. This is because not only does the outer edge of the saw blade sporadically come into contact with the outer weld line, but the presence of the inner weld line may result in more uniform wear across the entire width of the saw blade. As explained in more detail below, hardened material in the molten area of ​​the weld line may increase blade wear. Counterintuitively, this increased saw blade wear may result in increased saw blade life because the inner weld line may result in more uniform wear of the saw blade, enabling consistent dicing. Furthermore, due to the inner weld line, the saw blade does not need to be positioned as precisely to maintain level separation quality.

[0019] According to another exemplary dicing method, cutting of the welding substrate may be performed by scribing and subsequent breaking.

[0020] In this case, as described in more detail below, the inner weld line within the dicing area can include a heated area surrounding the melted area of ​​the weld line, which allows for more precise breaking and prevents chipping.

[0021] According to another exemplary dicing method, cutting of the welded substrate can be performed by laser drilling, in which adjacent perforations are introduced into the substrate, followed by etching, in which an etchant is used to connect the adjacent perforations, and / or by the application of a subsequent stress, which can be achieved mechanically and / or thermally (e.g., by a CO2 laser or a gas flame).

[0022] In this case, the inner weld line within the dicing area can again include a heated area surrounding the melted area of ​​the weld line, which can result in a more uniform etching rate and / or allow for more precise breaking and prevent chipping. Additionally, the inner weld line can prevent the etchant from reaching the bond interface.

[0023] In general, regardless of the dicing method, the presence of an inner weld line in the dicing area can result in a remaining partial weld line at the separation edge and / or a remaining portion of the weld line heating or melting area at the separation edge, which can result in increased edge strength and improved hermeticity of the singulated chips.

[0024] The cross section of the outer weld line and / or the inner weld line can preferably be characterized by a nonlinear absorption region, an elongated bubble preferably originating from the nonlinear absorption region, a melted region preferably surrounding the elongated bubble, and / or a heated region preferably surrounding the elongated bubble and / or the melted region.

[0025] As mentioned above, the present invention involves contacting a first substrate and a second substrate such that a contact area is formed between the substrates.

[0026] Preferably, the contact area has a width of less than 5 mm, preferably less than 2 mm, more preferably less than 1 mm, most preferably less than 0.6 mm.

[0027] Preferably, the contact area has a width greater than 0.1 mm, preferably greater than 0.4 mm, more preferably greater than 0.6 mm.

[0028] For example, the width of the contact area may be in the range of 0.1 mm to 5 mm, or in the range of 0.4 mm to 2 mm, or in the range of 0.6 mm to 1 mm.

[0029] As mentioned above, a dicing area is defined between at least two outer weld lines, particularly the two innermost outer weld lines.

[0030] Preferably, the dicing area has a width of less than 2 mm, preferably less than 1 mm, more preferably less than 0.3 mm.

[0031] Preferably, the dicing area has a width greater than 0.05 mm, preferably greater than 0.1 mm, more preferably greater than 0.2 mm.

[0032] For example, the width of the dicing region may be in the range of 0.05 mm to 2 mm, or in the range of 0.1 mm to 1 mm, or in the range of 0.2 mm to 0.3 mm.

[0033] As mentioned above, at least one inner weld line is introduced extending between the two outer weld lines along the dicing area. In some embodiments, more than one inner weld line may be beneficial.

[0034] Preferably, at least two inner weld lines are introduced, preferably at least four inner weld lines are introduced, more preferably at least eight inner weld lines are introduced.

[0035] The distance d between two adjacent inner weld lines may be less than 0.3 mm, preferably less than 0.15 mm, more preferably less than 0.05 mm.

[0036] In some embodiments, the inner weld lines may be introduced such that the ratio d / w is less than 3, preferably less than 2, where d is the distance between adjacent inner weld lines and w is the width of the dicing area. The distance d may preferably be the average distance between the inner weld lines.

[0037] In some embodiments, the method for welding substrates comprises determining a minimum shear force F that the weld of the first and second substrates must withstand. min and the defined minimum shear force F min and introducing several outer and / or inner weld lines to achieve

[0038] As described above, at least two outer weld lines extending along the contact area are introduced into the first and second substrates to weld them together. In other words, at least one outer weld line extends on each side of the dicing area. In some embodiments, two or more outer weld lines on each side of the dicing area may be beneficial.

[0039] Preferably, at least two outer weld lines may be introduced on each side of the dicing area, preferably at least three outer weld lines may be introduced on each side of the dicing area, and more preferably at least four outer weld lines may be introduced on each side of the dicing area.

[0040] The distance d between two adjacent outer weld lines on one side of the dicing area may be less than 0.3 mm, preferably less than 0.15 mm, more preferably less than 0.05 mm.

[0041] Generally, the present invention relates to a method for welding two substrates, preferably at least one of which may be transparent.

[0042] In some embodiments, the first substrate, and in particular the individual substrates, may comprise at least one of the following materials: glass, glass ceramic, borosilicate glass, quartz, sapphire, diamond.

[0043] In some embodiments, the second substrate may comprise at least one of the following materials: glass, glass ceramic, borosilicate glass, quartz, sapphire, diamond, silicon, metal.

[0044] The two substrates that are brought into contact may be in the form of, for example, a larger wafer that can be diced into a plurality of singulated chips. For example, a wafer having a thickness in the range of 0.3 mm to 1 mm and lateral dimensions in the range of 150 mm to 250 mm may be used, and such a wafer may be circular.

[0045] In some embodiments, the first and / or second substrate may have a thickness in the range of 0.03 mm to 20 mm, preferably in the range of 0.1 mm to 4 mm, and more preferably in the range of 0.2 mm to 2 mm.

[0046] In some embodiments, the first and / or second substrate may have lateral dimensions in the range of 30 mm to 1000 mm, preferably in the range of 50 mm to 500 mm.

[0047] In some embodiments, multiple dicing regions can be introduced into the two substrates, in which case the welded substrate can be diced into multiple singulated chips.

[0048] Preferably, such a plurality of dicing areas may define a grid, and the dicing areas may preferably extend orthogonally relative to one another.

[0049] The present invention further discloses a welding substrate including at least a first substrate and a second substrate, the first and second substrates contacting each other such that a contact area is formed between the two substrates.

[0050] At least two outer weld lines extend adjacent to each other within the contact area in the first and second substrates such that the first and second substrates are welded together by each of the outer weld lines and such that a dicing area is defined between the two outer weld lines.

[0051] One or more inner weld lines extend between the two outer weld lines in the dicing area in at least one of the two substrates.

[0052] Preferably, one or more functional areas are defined, each hermetically sealed by a dicing area.

[0053] The contacting first and second substrates may be two individual substrates, or an individual substrate and an outer substrate of a substrate stack, or the two outer substrates of a two-substrate stack. Thus, the welded substrate as described may include additional substrates.

[0054] For example, the welding substrate can include a third substrate, the second and third substrates contacting each other such that a contact area is formed between the two substrates.

[0055] At least two outer weld lines may extend adjacent to each other within a contact area in the second and third substrates such that the second and third substrates are welded together by each of the outer weld lines and such that a dicing area is defined between the two outer weld lines.

[0056] One or more inner weld lines may extend between the two outer weld lines in this dicing area in at least one of the two substrates.

[0057] Preferably, one or more cavities are defined, each hermetically sealed by a dicing region.

[0058] Preferably, such a cavity may be laterally enclosed by a spacer substrate with one or more cavities extending through the entire thickness of the spacer substrate.

[0059] The present invention further discloses a singulated chip, in particular a hermetically sealed enclosure, comprising at least a first substrate and a second substrate, the first and second substrates contacting each other and welded together by a weld seam.

[0060] The weld lines define the hermetically sealed functional area, and these weld lines weld the first and second substrates together.

[0061] At least two additional weld lines or partial weld lines may be positioned at the side edges of at least one of the substrates. Such weld lines or partial weld lines may be the result of a previously introduced internal weld line and may not necessarily weld the first and second substrates together, but may also extend within the volume of the substrates.

[0062] The singulated chip may comprise a further substrate, for example a third substrate, where the second and third substrates are in contact with each other and welded together by a weld seam.

[0063] The hermetically sealed cavity can be defined by weld lines that weld the substrates together.

[0064] Preferably, such a cavity may be laterally enclosed by a spacer substrate with the cavity extending through the entire thickness of the spacer substrate.

[0065] At least one weld line or partial weld line may be positioned at a side edge of at least one of the substrates. Such a weld line or partial weld line may be the result of a previously introduced internal weld line and may extend within the volume of the substrates without necessarily welding the substrates together.

[0066] The invention will now be described in more detail with reference to the drawings, in order to illustrate, by way of example, the features and advantages of some embodiments of the invention. [Brief explanation of the drawings]

[0067] [Figure 1] 1 shows a perspective view of a two wafer stack in which a pair of outer weld lines are introduced to weld the two wafers together and an inner weld line is introduced that extends between the pair of outer weld lines. [Figure 2] 2 shows an exploded view of a singulated chip produced by dicing the two welded wafers shown in FIG. 1. [Figure 3] 2 shows a partial cross-sectional view of a singulated chip produced by dicing the two welded wafers shown in FIG. 1. [Figure 4] FIG. 1 shows a perspective view of a stack of three wafers in which a pair of outer weld lines have been introduced to weld the top two wafers together, and an inner weld line has been introduced that extends between the pair of outer weld lines. [Figure 5] FIG. 5 shows an exploded view of a singulated chip produced by dicing the three welded wafers shown in FIG. 4. [Figure 6] 5 shows a partial cross-sectional view of a singulated chip produced by dicing the two welded wafers shown in FIG. 4. [Figure 7] FIG. 5 shows a perspective view of a singulated chip produced by dicing the three welded wafers shown in FIG. 4. [Figure 8] 5 shows a cross-sectional view of a singulated chip produced by dicing the two welded wafers shown in FIG. 4. [Figure 9] 1A-1D are several perspective views illustrating exemplary steps (a), (b), (c), and (d) for producing singulated chips from an initial wafer. [Figure 10] 1 shows a schematic diagram of a pair of outer weld lines defining a dicing area, with a single inner weld line extending into the dicing area. [Figure 11] 1 shows a schematic diagram of a pair of outer weld lines defining a dicing area with multiple inner weld lines extending into the dicing area. [Figure 12]1 shows a cross-sectional view of two welded substrates with an inner weld seam extending across both substrates. [Figure 13] 1 shows a cross-sectional view of two welded substrates, where the inner weld line extends within the volume of a single substrate. [Figure 14] 1 shows a cross-sectional view of two welded substrates, in which the distance between the inner weld lines is adjusted to the width of the dicing area. [Figure 15] A cross-sectional view of the weld line is shown. [Figure 16] 1 shows an image of a first exemplary embodiment of a welding substrate. [Figure 17] 10 shows an image of a second exemplary embodiment of a welding substrate. [Figure 18] 1 shows two images (a), (b) of a third exemplary embodiment of a welding substrate.

[0068] 1 shows a first substrate 10 in the form of a wafer and a second substrate 20 in the form of a wafer, the substrates 10, 20 stacked on top of each other. A pair of outer weld lines 110 is introduced into the first substrate 10 and the second substrate 20 by a laser 600 so as to weld the first substrate 10 and the second substrate 20 together. Again, an inner weld line 210 extending between the pair of outer weld lines 110 is introduced by the laser 600 into at least one of the two substrates 10, 20. The area completely enclosed by the weld lines defines a functional area 400.

[0069] These functional areas 400 can be singulated by dicing the welding substrate 10, 20 between the functional areas 400 in the dicing area 200 extending between the outer weld lines 110. Dicing the welding substrate 10, 20 into a plurality of singulated chips 1 can be performed by various cutting methods, such as sawing, scribing and then breaking, laser drilling and then etching or then breaking, etc. When cutting the welding substrate along the kerf, at least one of the inner weld lines 210 extending into the dicing area 200 can be captured by the cutting method.

[0070] 2 and 3 show a singulated chip 1 produced by dicing two welded wafers 10, 20. The singulated chip 1 comprises a first substrate 10, a second substrate 20, and a functional area 400 hermetically sealed by peripheral weld lines 110, 310, one of which is a partial weld line 310 positioned directly on a side edge of the singulated chip 1.

[0071] 4 shows three wafers 10, 20, 30, with the bottom two wafers 20, 30 already being an assembled wafer stack of two substrates welded together. The top wafer 10 is an individual wafer that is brought into contact with the outer wafer 20 of the bottom wafer stack. A laser 600 introduces an outer weld line 110 into the top individual wafer 10 and the outer wafer 20 of the bottom wafer stack to weld the two wafers 10, 20 together. Again, the laser 600 introduces an inner weld line 210 into at least one of the two substrates 10, 20, extending between the pair of outer weld lines 110.

[0072] 5-8 show a singulated chip 1 produced by dicing a welded wafer stack 10, 20, and 30. The singulated chip 1 comprises an upper first substrate 10, a middle second substrate 20, and a lower third substrate 30. The middle second substrate 20 is a spacer substrate having a cavity 500 extending through its entire thickness. The cavity 500 can accommodate a functional element 510, such as a microchip. The cavity 500 is hermetically sealed by peripheral weld lines 110 and 310 joining the first and second substrates 10 and 20 and the second and third substrates 20 and 30. The singulated chip 1 includes several partial weld lines 310 at its side edges.

[0073] FIG. 9 shows some exemplary steps for manufacturing chips singulated from an initial wafer, in this case three wafers 10, 20, 30. In step (a), part or all of the wafers are aligned with respect to each other and / or with respect to components to be sealed. For example, the spacer wafer 20 including the cavity 500 may be aligned with respect to the functional components mounted on the lower wafer 30, and the upper wafer 10 may be aligned with respect to the spacer wafer 20 and / or the lower wafer 30. In step (b), the wafers 10, 20, 30 are brought into contact such that contact regions are defined between adjacent wafers, in this case between wafers 10, 20 and between wafers 20, 30. In step (c), the adjacent wafers 10, 20 and 20, 30 are welded together by the laser 600, and as described above, a weld line is introduced into the contact region. In step (d), the welded wafer stack 10, 20, 30 may be diced into a plurality of singulated chips, and the dicing may be performed along a dicing trench 250 extending along the contact region including the weld line.

[0074] FIGS. 10 and 11 show a contact region 100 between two substrates and a pair of outer weld lines 110 introduced into these contact regions 100. The outer weld lines 110 are the outermost peripheral weld lines 110 adjacent to two edges of the contact region 100. The contact region has a width v. Between these outer weld lines 110, a dicing region 200 is defined, preferably without damaging the outer weld lines 110, for the purpose of cutting and dicing the welded substrate. The dicing region has a width w, where w ≦ v, preferably w < v. One or more inner weld lines 210, for example, one inner weld line 210 (FIG. 10) or four inner weld lines 210 (FIG. 11), are introduced into the dicing region 200. The advantage of fewer weld lines may be a shorter production time. Preferably, the cutting of the welded substrate is performed on one or more inner weld lines 210, and as a result, partial weld lines 310 remain at the edges of the singulated chips 1.

[0075] 12 shows one embodiment of two welded substrates 10, 20, in which two outer weld lines 110 are introduced on each side of a dicing area 200, and multiple inner weld lines 210 are introduced within the dicing area 200. In this case, the inner weld lines 210 are positioned at equal distances and equal focal positions relative to the outer weld lines 110, i.e., at equal depths within the substrates. In this case, both the outer weld lines 110 and the inner weld lines 210 are positioned at the interface of the two substrates 10, 20, thus welding the two substrates 10, 20 together.

[0076] 13 shows an embodiment of two welded substrates 10, 20, in which a single outer weld line 110 is introduced on each side of the dicing area 200 and multiple inner weld lines 210 are introduced within the dicing area 200. In this case, the inner weld lines 210 are at a greater distance from the outer weld line 110 than they are from each other. Furthermore, the inner weld line is positioned within the volume of one of the substrates, in this case the lower substrate 20. Therefore, the inner weld line does not contribute to welding the two substrates 10, 20 together. An advantage may be that the material in the separation zone breaks up and is therefore easier to separate from the singulated chips.

[0077] 14 shows one embodiment of two welded substrates 10, 20 with outer weld lines 110 and inner weld lines 210 introduced into the two substrates. The inner weld lines are preferably introduced such that the fraction d / w is less than 3, preferably less than 2, where d is the distance between adjacent inner weld lines 210 and w is the width of the dicing area 200. As mentioned above, at least one or some of the inner weld lines may lie in the plane of the outer weld lines and / or may lie completely within the volume of one of the substrates.

[0078] FIG. 15 shows a weld line that includes several regions or areas, such as a nonlinear absorption region 350, an elongated bubble 360 ​​that preferably originates from the nonlinear absorption region, a melted region 370 that preferably surrounds the elongated bubble, and / or a heated region 380 that preferably surrounds the elongated bubble and / or melted region.

[0079] 16 shows an image of a first exemplary embodiment of a welded substrate, which includes several weld lines forming an orthogonal grid between contact areas 100, defining functional areas 400 and / or cavities 500. In this case, the weld line pitch is in the range of 20 μm to 60 μm, e.g., 40 μm. The width of the weld zone is in the range of 250 μm to 450 μm, e.g., 360 μm.

[0080] Figure 17 shows an image of a second exemplary embodiment of a welding substrate, which includes several welding lines that define functional areas 400 and / or cavities 500 between contact areas 100 and form an orthogonal grid. In this case, the welding line pitch is in the range of 20 μm to 200 μm, e.g., 100 μm. The width of the welding zone is in the range of 50 μm to 5000 μm, e.g., 3000 μm. The width of the dicing trenches 250 is between 150 μm and 450 μm, e.g., 310 μm.

[0081] FIG. 18 shows an embodiment of a singulated glass enclosure 1. It has been cut in half and polished on the cut side to show the weld lines in the micrograph. It consists of three substrates 10, 20, and 30 welded together by weld lines 110, 210, and 310. In this case, the substrates are made of Borofloat 33™ glass with thicknesses of 320 μm, 500 μm, and 320 μm, respectively, and enclose a cavity 500. In this case, as in FIG. 16, the weld line pitch is in the range of 20 μm to 60 μm, e.g., 40 μm. The width of the weld zone is 250 μm to 450 μm, e.g., 360 μm. Singulation was performed with a dicing saw. [Explanation of symbols]

[0082] 1 Individual chip 10 First substrate 20 Second substrate 30 Third board 100 contact area of ​​width v 110 Outside weld line 200 width w dicing area 210 Inner weld line 250 dicing groove 310 Partial Weld Line 350 Nonlinear absorption region 360 Long and thin bubbles 370 Melting Zone 380 heating area 400 functional areas 500 cavities 510 Functional Elements 600 Laser

Claims

1. 1. A method of welding substrates, comprising: Bringing a first substrate (10) and a second substrate (20) into contact with each other so that a contact area (100) is formed between the two substrates; introducing at least two outer weld lines (110) extending adjacent to each other within the contact area (100) into the first and second substrates (10, 20) such that the first and second substrates (10, 20) are welded together by each of the outer weld lines (110) and a dicing area (200) is defined between the two outer weld lines (110); introducing at least four inner weld lines (210) extending between the two outer weld lines (110) in the dicing area into at least one of the two substrates; A method comprising:

2. Dicing the welding substrate into a plurality of singulated chips by cutting the welding substrate within the dicing area. further comprising Preferably, the cutting is performed on at least one of the inner weld lines extending into the dicing area. The method of claim 1.

3. the cutting of the welding substrate is performed by a saw blade; Preferably, the saw blade grips at least one of the inner weld lines extending into the dicing area.

3. The method according to claim 1 or 2.

4. The cutting of the welding substrate is performed by scribing and subsequent breaking.

4. The method according to any one of claims 1 to 3.

5. the cutting of the welding substrate is carried out by laser drilling, in which adjacent perforations are introduced into the substrate, and subsequent etching, in which an etching solution is used to connect the adjacent perforations, and / or by subsequent application of stress, for example mechanical and / or thermal stress; 5. The method according to any one of claims 1 to 4.

6. The cross section of the outer and / or inner weld seam may have the following characteristics: a nonlinear absorption region (350); an elongated bubble (360) preferably originating from said nonlinear absorption region; a molten region (370) preferably surrounding said elongated bubble; a heated region (380) preferably surrounding the elongated bubble and / or the melted region; 6. The method according to any one of claims 1 to 5.

7. said contact area has a width of less than 5 mm, preferably less than 2 mm, more preferably less than 1 mm, most preferably less than 0.6 mm; and / or the contact area has a width of more than 0.1 mm, preferably more than 0.4, more preferably more than 0.6 mm; 7. The method according to any one of claims 1 to 6.

8. the dicing area has a width of less than 2 mm, preferably less than 1 mm, more preferably less than 0.3 mm; and / or the dicing area has a width of more than 0.05 mm, preferably more than 0.1 mm, more preferably more than 0.2 mm; 8. The method according to any one of claims 1 to 7.

9. At least eight internal weld seams are introduced; and / or two adjacent inner weld lines have a distance d relative to one another that is less than 0.3 mm, preferably less than 0.15 mm, more preferably less than 0.05 mm; and / or the inner weld lines are introduced so that the ratio d / w is less than 3, preferably less than 2, where d is the distance between adjacent inner weld lines and w is the width of the dicing area; 9. The method according to any one of claims 1 to 8.

10. the minimum shear force F that the weld of the first and second substrates must withstand; ｍｉｎ and The minimum shear force F defined above ｍｉｎ introducing several outer and / or inner weld lines to achieve 10. The method of claim 1, further comprising:

11. At least two outer weld lines are introduced on each side of the dicing area, preferably at least three outer weld lines are introduced on each side of the dicing area, more preferably at least four outer weld lines are introduced on each side of the dicing area, and / or two adjacent outer weld lines have a distance d relative to each other that is less than 0.3 mm, preferably less than 0.15 mm, more preferably less than 0.05 mm; 11. The method according to any one of claims 1 to 10.

12. the first substrate comprises one of the following materials: glass, glass ceramic, borosilicate glass, crystal, sapphire, diamond; and / or the second substrate comprises one of the following materials: glass, glass ceramic, borosilicate glass, crystal, sapphire, diamond, silicon, metal; 12. The method according to any one of claims 1 to 11.

13. the first and / or second substrate has a thickness in the range of 0.03 mm to 20 mm, preferably in the range of 0.1 mm to 4 mm, more preferably in the range of 0.2 mm to 2 mm; and / or said first and / or second substrates have lateral dimensions in the range of 30 mm to 1000 mm, preferably in the range of 50 mm to 500 mm; 13. The method according to any one of claims 1 to 12.

14. A plurality of dicing regions are introduced into the two substrates; Preferably, the plurality of dicing areas define a grid.

14. The method of any one of claims 1 to 13.

15. A welding substrate, At least a first substrate (10) and a second substrate (20), The first and second substrates (10, 20) are in contact with each other such that a contact area (100) is formed between the two substrates; and at least two outer weld lines (110) extending adjacent to each other within the contact area (100) in the first and second substrates (10, 20), the first and second substrates (10, 20) being welded together by each of the outer weld lines, and a dicing area (200) being defined between the two outer weld lines; at least four inner weld lines (210) extending between the two outer weld lines (110) in the dicing area (200) in at least one of the two substrates (10, 20); A welding substrate comprising:

16. one or more functional areas (400) are defined, each hermetically sealed by said dicing area; The welded substrate of claim 15.

17. The welding substrate is A third substrate (30), the second and third substrates (20, 30) are in contact with each other such that a contact area (200) is formed between the two substrates; at least two outer weld lines (110) extending adjacent to each other within the contact area (200) in the second and third substrates (20, 30), the second and third substrates (20, 30) being welded together by each of the outer weld lines, and a dicing area (200) being defined between the two outer weld lines; one or more inner weld lines (210) extending between the two outer weld lines (110) in the dicing area (200) in at least one of the two substrates (20, 30); 17. The welding substrate of claim 15 or 16, further comprising:

18. one or more cavities (500) are defined, each hermetically sealed by said dicing area; 18. The welded substrate of claim 17.

19. A singulated chip (1), in particular a hermetically sealed enclosure, At least a first substrate (10) and a second substrate (20) Equipped with the first and second substrates (10, 20) are in contact with each other and welded together by a weld seam; An outer weld line defines a hermetically sealed functional area (400), and at least two further weld lines or partial weld lines (310) are positioned at the side edges of at least one of the substrates; A singulated chip (1).

20. Third substrate (30) Furthermore, the second and third substrates (20, 30) are in contact with each other and welded together by a weld seam; a hermetically sealed cavity (500) is defined by the weld lines, and at least one weld line or partial weld line (310) is positioned at said side edge of at least one substrate; Singulated chip (1) according to claim 19.

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