Exhaust gas pretreatment equipment for semiconductor manufacturing facilities

Abstract

According to the present invention, there is provided an exhaust gas pretreatment device for a semiconductor manufacturing facility, which pretreats exhaust gas discharged from a semiconductor processing chamber, where a semiconductor manufacturing process using a process gas is performed, by a vacuum pump through a chamber exhaust pipe connecting the semiconductor processing chamber to the vacuum pump. The exhaust gas pretreatment device includes: an exhaust gas reaction chamber installed on the chamber exhaust pipe; and a plasma reactor that generates plasma by decomposing a source gas to produce plasma gas containing reactive species. The exhaust gas reaction chamber includes an exhaust gas reaction unit that forms an exhaust gas reaction space therein where a target component contained in the exhaust gas mixes and reacts with the reactive species, and a cooling unit installed in the exhaust gas reaction unit.

Description

[Technical Field]

[0001] The present invention relates to a semiconductor manufacturing facility technology, and more particularly to a technology for preventing a decrease in fluidity of exhaust gas discharged from a process chamber of a semiconductor manufacturing facility. [Background technology]

[0002] Semiconductor devices are manufactured in a semiconductor process chamber by repeatedly performing processes such as photolithography, etching, diffusion, and metal deposition on wafers using various process gases. After a process is completed in the semiconductor process chamber, residual gas remains in the semiconductor process chamber. Since the residual gas contains toxic components, it is exhausted by a vacuum pump and purified by an exhaust gas treatment device such as a scrubber.

[0003] The LFW (Low-Fluorine Tungsten) process is a semiconductor process in which ALD (Atomic Layer Deposition) is performed using process gases containing tungsten hexafluoride (WF6), diborane (B2H6), argon (Ar), and hydrogen (H2). After the LFW process is completed, exhaust gases containing WF6 and B2H6 are exhausted from the semiconductor process chamber by a vacuum pump. WF6 and B2H6 contained in the exhaust gases from the LFW process react to form W X By-products may be generated. X The by-products are deposited on the vacuum pump, causing a decrease in the performance of the vacuum pump and a shortened MTBF (Mean Time Between Failure) of the vacuum pump.

[0004] The Amorphous Carbon Layer (ACL) process is a semiconductor manufacturing process in which amorphous carbon is deposited to form an amorphous carbon film (ACL). After the ACL process, residual gas containing hydrogenated amorphous carbon (aC:H) is generated in the process chamber. After the ACL process, exhaust gas containing hydrogenated amorphous carbon (aC:H) is exhausted from the semiconductor processing chamber by a vacuum pump. The hydrogenated amorphous carbon (aC:H) contained in the exhaust gas from the ACL process is deposited on the vacuum pump, reducing its performance and shortening its MTBF.

[0005] The TEOS (TetraEthyl Ortho Silicate, Si(OC2H5)4) process is a semiconductor process that uses TEOS gas to deposit a TEOS film on a wafer. After the TEOS process is performed, residual gas containing TEOS is generated in the process chamber. After the TEOS process is performed, exhaust gas containing TEOS is exhausted from the semiconductor process chamber by a vacuum pump. The TEOS contained in the exhaust gas reacts with oxygen to generate SiO2 (silicon dioxide) powder as a by-product, which is deposited on the vacuum pump, reducing its performance and shortening its MTBF.

[0006] In relation to the present invention, Korean Patent Registration No. 10-1315880 describes a configuration in which an LFW process is performed in the manufacture of a metal wiring structure, Korean Patent Publication No. 10-2009-0057487 describes a configuration in which an ACL process is performed in the manufacture of a semiconductor device, Korean Patent Publication No. 10-2009-0070800 describes a configuration in which a TEOS process is performed in the manufacture of a semiconductor device, and Korean Patent Publication No. 10-2019-0019651 describes a configuration of a plasma chamber for treating exhaust gases. Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the present invention is to provide an exhaust gas pretreatment device for pretreating exhaust gases discharged from a process chamber in a semiconductor manufacturing facility where semiconductor manufacturing processes using various process gases are performed, in order to prevent a decrease in fluidity of the exhaust gases.

[0008] Another object of the present invention is to provide a vacuum pump for exhausting residual gases from a semiconductor processing chamber, which is capable of preventing the formation of a film-like W X To prevent deposition of by-products, an exhaust gas pre-treatment device is provided to pre-treat the exhaust gas before it is introduced into the vacuum pump.

[0009] It is yet another object of the present invention to provide an exhaust gas pretreatment device that pretreats exhaust gas before it enters a vacuum pump to prevent deposition of hydrogenated amorphous carbon (aC:H) in a vacuum pump that exhausts residual gases from a semiconductor processing chamber.

[0010] Yet another object of the present invention is to provide an exhaust gas pre-treatment device that pre-treats exhaust gas before it enters a vacuum pump to prevent deposition of SiO2 powder on a vacuum pump that exhausts residual gases from a semiconductor processing chamber. [Means for solving the problem]

[0011] In order to achieve the above-mentioned object, according to one aspect of the present invention, there is provided an exhaust gas pretreatment device for a semiconductor manufacturing facility, which pretreats exhaust gas discharged from a semiconductor process chamber, where a semiconductor manufacturing process using a process gas is performed, by a vacuum pump through a chamber exhaust pipe connecting the semiconductor process chamber to the vacuum pump, the exhaust gas pretreatment device including: an exhaust gas reaction chamber provided on the chamber exhaust pipe; and a plasma reactor that generates plasma by decomposing a source gas to produce plasma gas containing reactive species; the exhaust gas reaction chamber including an exhaust gas reaction unit that forms an exhaust gas reaction space therein where the reactive species mix and react with components to be treated contained in the exhaust gas, and a cooling unit provided in the exhaust gas reaction unit.

[0012] In order to achieve the above objects, according to another aspect of the present invention, there is provided an exhaust gas pretreatment device for a semiconductor manufacturing facility, the exhaust gas pretreatment device comprising: an exhaust gas reaction chamber disposed on the chamber exhaust pipe; a plasma reactor configured to generate plasma by decomposing a source gas to produce plasma gas containing reactive species; and a plasma supply pipe connecting the exhaust gas reaction chamber to the plasma reactor. The plasma supply pipe includes a plasma supply passage through which the plasma gas generated from the plasma reactor is discharged and flows, and a cooling fluid passage through which a cooling fluid flows. The exhaust gas reaction chamber includes an exhaust gas reaction unit that forms an exhaust gas reaction space therein in which components to be treated contained in the exhaust gas and the reactive species introduced through the plasma supply passage mix and react with each other. [Effects of the Invention]

[0013] According to the present invention, it is possible to achieve all of the above-mentioned objects. Specifically, in the exhaust gas pretreatment equipment according to the present invention, an exhaust gas reaction chamber is provided on a chamber exhaust pipe through which the exhaust gas flows, reactive species generated by an external plasma reactor are supplied to the exhaust gas reaction chamber, and powder formation-inducing components contained in the exhaust gas react with the reactive species in the exhaust gas reaction chamber and are removed, thereby effectively preventing a decrease in the fluidity of the exhaust gas.

[0014] Furthermore, the exhaust gas reaction chamber is cooled by a cooling means, thereby preventing damage to the exhaust gas pre-treatment equipment due to overheating.

[0015] Diborane (B2H6) contained in the exhaust gas discharged from the semiconductor processing chamber is converted into reactive species (F * ) reacts with and is removed in the exhaust gas treatment chamber, so W XThe production of by-products is suppressed, and the performance of the vacuum pump is prevented from being degraded.

[0016] In addition, the SiO2 powder contained in the exhaust gas discharged from the semiconductor processing chamber is generated by decomposing nitrogen trifluoride (NF3) in the external plasma reactor. * ) is reacted with and removed in the exhaust gas treatment chamber, preventing vacuum pump deposition of SiO2 powder.

[0017] The hydrogenated amorphous carbon contained in the exhaust gas discharged from the semiconductor processing chamber is generated by the reactive species (O) generated by the decomposition of oxygen (O) in the external plasma reactor. * ) is reacted with and removed in the exhaust gas treatment chamber, preventing vacuum pump deposition of hydrogenated amorphous carbon. [Brief explanation of the drawings]

[0018] [Figure 1] 1 is a diagram showing a schematic configuration of a semiconductor manufacturing facility provided with an exhaust gas pretreatment device according to an embodiment of the present invention; [Figure 2] 2 is a longitudinal cross-sectional view of a plasma reactor in the pre-treatment equipment of the semiconductor manufacturing facility shown in FIG. 1. [Figure 3] FIG. 3 is a perspective view showing the magnetic core shown in FIG. 2. [Figure 4] 2 is a diagram specifically showing the configuration of part "E" in FIG. 1. [Figure 5] FIG. 5 is a perspective view showing an exhaust gas reaction chamber in the configuration of FIG. 4. [Figure 6] FIG. 6 is a cross-sectional view of the exhaust gas reaction chamber shown in FIG. 5 taken along line AA'. [Figure 7] FIG. 6 is a cross-sectional view of the exhaust gas reaction chamber taken along line BB' in FIG. 5. [Figure 8] FIG. 5 is a perspective view showing a plasma supply pipe in the configuration of FIG. 4. [Figure 9] 5 is a diagram for explaining a state in which pre-treatment of exhaust gas is performed in the exhaust gas reaction chamber of FIG. 4; [Figure 10] 5 is a diagram for explaining a state in which pre-treatment of exhaust gas is performed in the exhaust gas reaction chamber of FIG. 4; [Figure 11] 5 is a diagram for explaining a state in which pre-treatment of exhaust gas is performed in the exhaust gas reaction chamber of FIG. 4; DETAILED DESCRIPTION OF THE INVENTION

[0019] Hereinafter, the configuration and operation of an embodiment of the present invention will be described in detail with reference to the drawings.

[0020] 1 is a block diagram illustrating a schematic configuration of a semiconductor manufacturing facility equipped with an exhaust gas pretreatment system according to an embodiment of the present invention. Referring to FIG. 1, semiconductor manufacturing facility 100 includes semiconductor manufacturing equipment 101 where a semiconductor manufacturing process for manufacturing semiconductor devices is performed, exhaust gas treatment equipment 103 that treats gases exhausted from semiconductor manufacturing equipment 101, exhaust equipment 105 that exhausts gases from semiconductor manufacturing equipment 101 and flows them into exhaust gas treatment equipment 103, and exhaust gas pretreatment equipment 109 according to an embodiment of the present invention that pretreats gases exhausted from semiconductor manufacturing equipment 101 to prevent a decrease in gas flowability.

[0021] The semiconductor manufacturing equipment 101 manufactures semiconductor devices by performing a semiconductor manufacturing process using various process gases. The semiconductor manufacturing equipment 101 includes a semiconductor process chamber 102 in which the semiconductor manufacturing process using various process gases proceeds. Although not shown, the semiconductor manufacturing equipment 101 further includes a process gas supply unit that supplies various types of process gases required for the semiconductor process chamber 102.

[0022] The semiconductor process chamber 102 may be any type of semiconductor process chamber commonly used in the field of semiconductor manufacturing equipment for manufacturing semiconductor devices. Residual gases generated in the semiconductor process chamber 102 are exhausted to the outside by exhaust equipment 105 and purified by exhaust gas treatment equipment 103. In this embodiment, the semiconductor process performed in the semiconductor process chamber 102 is described as an LFW process in which ALD is performed using a process gas containing tungsten hexafluoride (WF), diborane (BH), argon (Ar), and hydrogen (H); an ACL (amorphous carbon film) process in which amorphous carbon is deposited using a process gas containing propene (CH), argon (Ar), and helium (He) to form an amorphous carbon film (ACL); or a TEOS process in which a TEOS film is deposited on a wafer using TEOS gas.

[0023] The LFW process is also a process for forming metal wiring structures in semiconductor memory devices, as described in Korean Patent Registration No. 10-1315880. Residual gases generated after semiconductor processing in the semiconductor processing chamber 102 are exhausted from the processing chamber 102 as exhaust gases by the exhaust device 105. The exhaust gases exhausted from the semiconductor processing chamber 102 may contain WF6 and B2H6. The WF6 and B2H6 contained in the exhaust gases exhausted from the semiconductor processing chamber 102 react with each other to form W films. X By-products are generated, and membrane-like W X The by-products are deposited on the exhaust system 105, which reduces the performance of the exhaust system 105. According to the present invention, B2H6 is removed by the exhaust gas pre-treatment system 109, and the film quality W is X The production of by-products is suppressed.

[0024] The ACL process is also a semiconductor process disclosed, for example, in Korean Patent Publication No. 10-2009-0057487. After the ACL process is performed, residual gas containing amorphous carbon (aC:H) is generated in the process chamber 102. After the ACL process is performed, residual gas containing hydrogenated amorphous carbon (aC:H) generated in the semiconductor process chamber 102 is exhausted from the semiconductor process chamber 102 as exhaust gas by the exhaust device 105. The hydrogenated amorphous carbon (aC:H) contained in the exhaust gas exhausted from the semiconductor process chamber 102 is deposited on the exhaust device 105, degrading the performance of the exhaust device 105. According to the present invention, the hydrogenated amorphous carbon (aC:H) is removed by the exhaust gas pre-treatment device 109, preventing the deposition of hydrogenated amorphous carbon (aC:H).

[0025] The TEOS process is also a semiconductor process disclosed, for example, in Korean Patent Publication No. 10-2009-0070800. After the TEOS process is performed, residual gas containing TEOS is generated in the process chamber. After the TEOS process is performed, exhaust gas containing TEOS is exhausted from the semiconductor process chamber by a vacuum pump. The TEOS contained in the exhaust gas reacts with oxygen to generate SiO2 (silicon dioxide) powder as a by-product. The SiO2 powder is deposited on the exhaust equipment 105, reducing the performance of the exhaust equipment 105. According to the present invention, the SiO2 powder is removed by the exhaust gas pre-treatment equipment 109, preventing the deposition of SiO2 powder.

[0026] The exhaust gas treatment equipment 103 treats and purifies harmful components contained in the exhaust gas discharged from the semiconductor process chamber 102 through the exhaust equipment 105. The exhaust gas treatment equipment 103 includes a scrubber 104 that treats the exhaust gas. The scrubber 104 may be any type of scrubber commonly used in the field of semiconductor manufacturing equipment technology for treating exhaust gas.

[0027] The exhaust equipment 105 exhausts residual gases generated after processing in the semiconductor process chamber 102 from the semiconductor process chamber 102. The exhaust equipment 105 includes a vacuum pump 106, a chamber exhaust pipe 107 connecting the semiconductor process chamber 102 and the vacuum pump 106, and a pump exhaust pipe 108 extending downstream from the vacuum pump 106.

[0028] The vacuum pump 106 creates a negative pressure on the semiconductor process chamber 102 side through a chamber exhaust pipe 107 connecting the semiconductor process chamber 102 and the vacuum pump 105 to exhaust residual gas from the semiconductor process chamber 102. The vacuum pump 106 includes the configuration of a vacuum pump commonly used in the semiconductor manufacturing equipment technology field, and therefore a detailed description thereof will be omitted. The vacuum pump 106 is used to exhaust the film-quality W generated as a by-product of the LFW process. X By-products, hydrogenated amorphous carbon (aC:H) generated as a by-product of the ACL process, and SiO2 powder generated as a by-product of the TEOS process are deposited, which reduces the performance of the vacuum pump 106. According to the present invention, the exhaust gas pre-treatment equipment 109 is used to X The formation of by-products is suppressed, hydrogenated amorphous carbon (aC:H) and SiO2 powder are removed, and the MTBF of the vacuum pump 106 is extended.

[0029] The chamber exhaust pipe 107 connects the exhaust port of the semiconductor process chamber 102 to the inlet port of the vacuum pump 106 between the semiconductor process chamber 102 and the vacuum pump 106. The negative pressure created by the vacuum pump 106 causes residual gases in the semiconductor process chamber 102 to be exhausted through the chamber exhaust pipe 107 as exhaust gases. As the exhaust gases flow through the chamber exhaust pipe 107, they are pre-treated by the exhaust gas pre-treatment device 109.

[0030] The pump exhaust pipe 108 extends downstream from the vacuum pump 106. The pump exhaust pipe 108 is connected to the discharge port of the vacuum pump 106, and exhaust gas discharged from the vacuum pump 106 flows through the pump exhaust pipe 108. The scrubber 104 is connected to the downstream end of the pump exhaust pipe 108, and exhaust gas discharged from the vacuum pump 106 flows into the scrubber 104 through the pump exhaust pipe 108.

[0031] The exhaust gas pretreatment equipment 109 pretreats the exhaust gas discharged from the semiconductor process chamber 102 to prevent a decrease in the fluidity of the exhaust gas discharged from the semiconductor process chamber 102. The exhaust gas pretreatment equipment 109 generates reactive species using plasma and reacts the generated reactive species with target components contained in the exhaust gas before the exhaust gas discharged from the semiconductor process chamber 102 flows into the vacuum pump 106 to remove the target components. The exhaust gas pretreatment equipment 109 includes a plasma reactor 110 that generates reactive species using plasma, a power supply 180 that supplies power to the plasma reactor 110, a gas supply 185 that supplies a source gas to the plasma reactor 110, an exhaust gas reaction chamber 150 installed on the chamber exhaust pipe 107 where the reactive species generated from the plasma reactor 110 react with target components contained in the exhaust gas, and a plasma supply pipe 170 that connects the plasma reactor 110 to the exhaust gas reaction chamber 150.

[0032] The plasma reactor 110 generates reactive species by decomposing the gas supplied from the gas supplier 185 using plasma. In this embodiment, the plasma reactor 110 generates reactive fluorine atoms (F * ) or reactive oxygen, excited oxygen atoms (O * In this embodiment, excited fluorine atoms (F * ) is generated by decomposing nitrogen trifluoride (NF) supplied from the gas supplier 185 by plasma in the plasma reactor 110, and excited oxygen atoms (O *) is generated by decomposing oxygen (O2) supplied from the gas supplier 185 into plasma in the plasma reactor 110. In this embodiment, the plasma reactor 110 is described as an inductively coupled plasma reactor using inductively coupled plasma (ICP). Although the plasma reactor 110 is described as using inductively coupled plasma in this embodiment, the present invention is not limited thereto. In the present invention, the plasma reactor includes any type of plasma reactor that generates a plasma reaction (e.g., a plasma reactor using capacitively coupled plasma (CCP)), and this also falls within the scope of the present invention.

[0033] 2 shows a schematic longitudinal cross-sectional view of the plasma reactor 110. Referring to FIG. 2, the plasma reactor 110 includes a plasma reaction chamber 120, a magnetic core 130 disposed to surround the plasma reaction chamber 120, an igniter 140 for igniting the plasma, and a coil (not shown) wound around the magnetic core 130 and supplied with power from a power source (180 in FIG. 1).

[0034] The plasma reaction chamber 120 is a toroidal chamber and includes a gas inlet 121, a gas outlet 123 spaced apart from the gas inlet 121, and a plasma reaction section 125 connecting the gas inlet 121 and the gas outlet 123 and where a plasma reaction occurs. The plasma reaction chamber 120 decomposes gas supplied from a gas supplier (185 in FIG. 1) using plasma to generate reactive species.

[0035] The gas inlet 121 is a short tube extending around a linear extension axis (X), and the tip of the gas inlet 121 is open to form an inlet 122 through which gas flows in. The inlet 122 is connected to a gas supplier 185 through a gas inlet pipe (186 in FIG. 1). Nitrogen trifluoride (NF3) or oxygen (O2) supplied by the gas supplier 185 flows into the plasma reaction chamber 120 through the inlet 122.

[0036] The gas outlet 123 is a short tube positioned coaxially and spaced apart from the gas inlet 121 on the extension axis (X), and the rear end of the gas outlet 123 is opened to form an outlet 124 through which gas is discharged. The outlet 124 is connected to the exhaust gas reaction chamber (150 in FIG. 1) through a plasma supply pipe (170 in FIG. 1). After reactive species generated in the plasma reaction chamber 120 are discharged through the outlet 124, they flow along the plasma supply pipe (187 in FIG. 1) and enter the exhaust gas reaction chamber (150 in FIG. 1).

[0037] The plasma reaction unit 125 connects the gas inlet 121 and gas outlet 123, which are spaced apart, to form a plasma reaction region (H) within which thermal and plasma reactions occur. The plasma reaction unit 125 includes a first connection pipe 126 and a second connection pipe 127, which are spaced apart on either side of an extension axis (X). The first and second connection pipes 126 and 127 extend parallel to the extension axis (X) and are connected to the gas inlet 121 and gas outlet 123. As a result, plasma is generated in the plasma reaction unit 125 along a circular discharge loop (R), as indicated by the dotted line.

[0038] The plasma generated in the plasma reaction region (H) decomposes the gas flowing in through the inlet 122, generating reactive species. As shown in the figure, when nitrogen trifluoride (NF3) is flowed in through the inlet 122, the nitrogen trifluoride (NF3) is decomposed in the plasma reaction region (H), generating excited fluorine atoms (F * ) and fluorine (F2). Specifically, in the plasma reaction region (H), nitrogen trifluoride (NF3) is converted into nitrogen (N2), fluorine (F2), and excited nitrogen atoms (N * ), excited fluorine atoms (F * Although not shown, when oxygen (O2) is introduced through the inlet 122, the oxygen (O2) is decomposed in the plasma reaction region (H) to produce excited oxygen atoms (O *) is generated.

[0039] In this embodiment, the plasma reaction chamber 120 is described as being configured by combining a first chamber member 120a and a second chamber member 120b. The first chamber member 120a includes the entire gas inlet 121 and a portion of the first and second connecting pipes 126 and 127 connected to the gas inlet 121. The second chamber member 120b includes the entire gas outlet 123 and a portion of the first and second connecting pipes 126 and 127 connected to the gas outlet 123.

[0040] The magnetic core 130 is disposed to surround the plasma reaction chamber 120. In this embodiment, the magnetic core 130 is a ferrite core that is commonly used in inductively coupled plasma generators. FIG. 3 shows a perspective view of the magnetic core 130. Referring to FIGS. 2 and 3, the magnetic core 130 includes an annular hook 131 that surrounds the plasma reaction unit 125 of the plasma reaction chamber 120 from the outside, and a connecting portion 135 that crosses the inner region of the hook 131.

[0041] The hook 131 has a roughly rectangular ring shape, is disposed perpendicular to the extension axis (X), and externally surrounds the plasma reaction section 125 of the plasma reaction chamber 120. The rectangular hook 131 has two opposing long sides 132a, 132b and two opposing short sides 133a, 133b.

[0042] The connecting portion 135 extends linearly between the two opposing long sides 132a, 132b of the hook 131. Both ends of the connecting portion 135 are connected to the centers of the two long sides 132a, 132b. The connecting portion 135 is disposed to pass through a gap 128 formed between the first connecting pipe portion 126 and the second connecting pipe portion 127 of the plasma reaction chamber 120. The connecting portion 135 separates the inner region of the hook 131 into a first through-hole 136 and a second through-hole 137. The first connecting pipe portion 126 of the reaction chamber 120 passes through the first through-hole 136, and the second connecting pipe portion 127 of the plasma reaction chamber 120 passes through the second through-hole 137. As a result, the magnetic core 130 surrounds the first connecting pipe portion 126 and the second connecting pipe portion 127 of the reaction chamber 120 from the outside.

[0043] 2, an igniter 140 receives high voltage power from a power source (180 in FIG. 1) to ignite plasma. In this embodiment, the igniter 140 is described as being located adjacent to the gas inlet 121 in the plasma reaction section 125 of the plasma reaction chamber 120, but the present invention is not limited thereto.

[0044] A coil (not shown) is wound around the magnetic core 130 and connected to a power source (180 in FIG. 1). Radio frequency AC power is applied to the coil (not shown) through the power source (180 in FIG. 1), thereby forming an induced magnetic flux in the magnetic core 130. An induced electric field is generated by the induced magnetic flux formed in the magnetic core 130, and plasma is generated by the generated induced electric field.

[0045] 1, power supply 180 applies radio frequency AC power to a coil (not shown) wound around a magnetic core (130 in FIG. 2) to generate inductively coupled plasma. Power supply 180 also supplies power to an igniter (140 in FIG. 1).

[0046] The gas supplier 185 stores a source gas of reactive species generated by plasma in the plasma reactor 110 and supplies the stored source gas to the plasma reactor 110 through a gas inlet pipe 186. In this embodiment, the gas supplier 185 is described as supplying nitrogen trifluoride (NF3) or oxygen (O2) to the plasma reactor 110 as the source gas of reactive species.

[0047] 1 and 4, the exhaust gas reaction chamber 150 is installed on the chamber exhaust pipe 107 and is supplied with reactive species generated from the plasma reactor 110 through a plasma supply pipe 170. In the exhaust gas reaction chamber 150, target components contained in the exhaust gas react with the reactive species and are removed. Referring to FIGS. 5, 6, and 7, the exhaust gas reaction chamber 150 includes a chamber body 151 and a cooling means 160 installed in the chamber body 151. In the present invention, the term "installed on the chamber exhaust pipe 107" includes the case where the exhaust gas reaction chamber 150 is installed at the downstream end of the chamber exhaust pipe 107, in which case the exhaust gas reaction chamber 150 is located at the end of the vacuum pump 106.

[0048] The chamber body 151 includes an exhaust gas inlet 152, an exhaust gas outlet 154 located apart from the exhaust gas inlet 152, and an exhaust gas reaction section 156 that connects the exhaust gas inlet 152 and the exhaust gas outlet 154 and in which a reaction between reactive species and the components to be treated occurs.

[0049] The exhaust gas inlet 152 has a short tubular shape, and its tip is open to form an inlet 153 through which the exhaust gas flows. The inlet 153 is connected to the semiconductor processing chamber (102 in FIG. 1) through a chamber exhaust pipe (107 in FIG. 1). The exhaust gas discharged from the semiconductor processing chamber (102 in FIG. 1) flows into the exhaust gas reaction unit 156 through the inlet 153.

[0050] The exhaust gas discharge part 154 is a short pipe positioned coaxially and spaced apart from the exhaust gas inlet part 152, and the rear end of the exhaust gas discharge part 154 is opened to form an outlet 155 through which gas is discharged. The outlet 155 is connected to the vacuum pump (106 in FIG. 1) through a chamber exhaust pipe (107 in FIG. 1). The gas discharged from the exhaust gas reaction part 156 through the outlet 155 flows into the vacuum pump (106 in FIG. 1) through the chamber exhaust pipe (107 in FIG. 1).

[0051] The exhaust gas reaction unit 156 connects the exhaust gas inlet 152 and the exhaust gas outlet 154 and forms an exhaust gas reaction space 157 therein. In the exhaust gas reaction space 157, reactive species supplied from the plasma reactor (110 in FIG. 1) and components to be treated contained in the exhaust gas discharged from the semiconductor processing chamber (102 in FIG. 1) mix and react with each other. The exhaust gas reaction unit 156 has a cylindrical shape with the exhaust gas inlet 152 and the exhaust gas outlet 154 coaxially formed therein, and the exhaust gas reaction space 157 formed therein has a cylindrical shape corresponding to the external shape of the exhaust gas reaction unit 156. The exhaust gas reaction space 157 is approximately disk-shaped with a low height and a larger diameter than the chamber exhaust pipe (107 in FIG. 1). Therefore, the exhaust gas reaction space 157 has a size that is further expanded outward than the chamber exhaust pipe (107 in FIG. 1). The exhaust gas reaction space 157 is connected to the chamber exhaust pipe (107 in FIG. 1) through the exhaust gas inlet 152 and the exhaust gas outlet 154. A plasma inlet 158 ​​connected to the plasma supply pipe 170 is formed on the outer periphery of the exhaust gas reaction space 156. Reactive species generated from the plasma reactor (110 in FIG. 1) are introduced into the exhaust gas reaction space 157 through the plasma inlet 158.

[0052] The cooling means 160 is provided in the exhaust gas reaction unit 156 of the chamber body 151 and uses cooling water to lower the temperature of the exhaust gas reaction chamber 150, thereby preventing damage to the equipment due to overheating. The cooling means 160 includes three cooling jackets 161, 163, and 165, and four cooling fluid pipes 166, 167, 168, and 169 connected to the three cooling jackets 161, 163, and 165.

[0053] Of the three cooling jackets 161, 163, and 165, one 161 is an outer circumferential cooling jacket that surrounds the outer circumferential surface of the exhaust gas reaction section 156, the other 163 is an upstream end cooling jacket provided outside the upstream end of the exhaust gas reaction section 156, and the remaining one 165 is a downstream end cooling jacket provided outside the downstream end of the exhaust gas reaction section 156. An outer circumferential cooling fluid accommodating space 161a is formed inside the outer circumferential cooling jacket 161 to accommodate a cooling fluid such as cooling water. An upstream cooling fluid accommodating space 163a is formed inside the upstream end cooling jacket 163 to accommodate a cooling fluid such as cooling water. An downstream cooling fluid accommodating space 165a is formed inside the downstream end cooling jacket 165 to accommodate a cooling fluid such as cooling water. The exhaust gas reaction unit 156 is cooled by the cooling fluid accommodated in the cooling fluid accommodation spaces 161a, 163a, and 165a of the three cooling jackets 161, 163, and 165, respectively. Four cooling fluid pipes 166, 167, 168, and 169 are connected to the three cooling jackets 161, 163, and 165. Although the present embodiment describes the case where there are three cooling jackets, the present invention is not limited thereto. The number of cooling jackets may be two or less or four or more, and this also falls within the scope of the present invention.

[0054] Four cooling fluid pipes 166, 167, 168, 169 are connected to the three cooling jackets 161, 163, 165. Of the four cooling water pipes 166, 167, 168, 169, one 166 is a first cooling fluid inlet / outlet pipe connected to the upstream end cooling jacket 163, another 167 is a second cooling fluid inlet / outlet pipe connected to the downstream end cooling jacket 165, still another 168 is a first connecting pipe connecting the upstream end cooling jacket 163 and the outer circumferential cooling jacket 161, and the remaining one 169 is a second connecting pipe connecting the downstream end cooling jacket 165 and the outer circumferential cooling jacket 161. A cooling fluid (C) such as cooling water flows into the upstream end cooling jacket 163 through a first cooling water inlet / outlet pipe 166, the cooling fluid in the upstream end cooling jacket 163 flows into the outer circumferential cooling jacket 161 through a first connecting pipe 168, the cooling fluid in the outer circumferential cooling jacket 161 flows into the downstream end cooling jacket 165 through a second connecting pipe 169, and the cooling water in the downstream end cooling jacket 165 is discharged through a second cooling water inlet / outlet pipe 167. In this embodiment, the cooling fluid is described as flowing in through the first cooling water inlet / outlet pipe 166 and being discharged through the second cooling water inlet / outlet pipe 167, but the cooling fluid may alternatively flow in through the second cooling water inlet / outlet pipe 167 and be discharged through the first cooling water inlet / outlet pipe 166, and this also falls within the scope of the present invention.

[0055] 2, the plasma supply pipe 170 connects the plasma reactor 110 and the plasma inlet 158 ​​of the exhaust gas reaction chamber 150. The reactive species generated from the plasma reactor 110 are supplied to the exhaust gas reaction space 157 of the exhaust gas reaction chamber 150 through the plasma supply pipe 170. FIG. 8 shows the configuration of the plasma supply pipe 170. Referring to FIG. 8, the plasma supply pipe 170 is formed with a plasma supply passage 171 that connects the plasma reactor 110 and the exhaust gas reaction chamber 150, and a cooling fluid passage 175 that surrounds the plasma supply passage 171. The reactive species generated from the plasma reactor 110 are supplied to the exhaust gas reaction space 157 of the exhaust gas reaction chamber 150 through the plasma supply passage 171. A cooling fluid such as cooling water flows through the cooling fluid passage 175 to lower the temperature of the gas flowing into the exhaust gas reaction chamber 150 through the plasma supply passage 171, thereby improving the cooling performance of the exhaust gas reaction chamber 150.

[0056] 9 shows a state in which pretreatment of exhaust gas containing B2H6 generated by the LFW process is performed in the exhaust gas reaction chamber 150. Referring to FIG. 9, in the exhaust gas reaction chamber 150, B2H6 contained in the exhaust gas is converted into excited fluorine atoms (F), which are reactive species generated during the process of decomposing nitrogen trifluoride (NF3) using plasma. * ) and fluorine (F2) to generate boron trifluoride (BF3) and hydrofluoric acid (HF), and B2H6 is removed. By removing B2H6, the film quality W X Although not shown, reactive species (F) that do not react in the exhaust gas reaction chamber 150 and are discharged are also generated. * ) flows into the vacuum pump (106 in FIG. 1) and reacts with the tungsten (W) deposited on the vacuum pump (106 in FIG. 1) to generate tungsten hexafluoride (WF6) gas, thereby removing the tungsten deposited on the vacuum pump (106 in FIG. 1). Also, although not shown, fluorine (F2) that is not reacted and is discharged from the exhaust gas reaction chamber 150 flows into the vacuum pump (106 in FIG. 1) and reacts with the hydrocarbons (C) deposited on the vacuum pump (106 in FIG. 1).X H Y ) to generate carbon tetrafluoride (CF4) and hydrofluoric acid (HF), which is then reacted with the hydrocarbon (C X H Y ) may be removed.

[0057] 10 shows a state in which pre-treatment of exhaust gas containing hydrogenated amorphous carbon (aC:H) generated by the ACL process is performed in the exhaust gas reaction chamber 150. Referring to FIG. 10, in the exhaust gas reaction chamber 150, the hydrogenated amorphous carbon (aC:H) contained in the exhaust gas is decomposed with oxygen (O2) using plasma to generate excited oxygen atoms (O), which are reactive species. * ) to generate carbon dioxide gas (CO2) and water vapor (H2O), thereby removing the hydrogenated amorphous carbon (aC:H). Although not shown, reactive species (O * ) may be introduced into the vacuum pump (106 in FIG. 1) and react with the hydrogenated amorphous carbon (aC:H) deposited on the vacuum pump (106 in FIG. 1) to generate carbon dioxide gas (CO) and water vapor (HO), thereby removing the hydrogenated amorphous carbon (aC:H) deposited on the vacuum pump (106 in FIG. 1).

[0058] 11 shows a state in which pretreatment of exhaust gas containing SiO2 powder generated by the TEOS process is performed in the exhaust gas reaction chamber 150. Referring to FIG. 11, in the exhaust gas reaction chamber 150, the SiO2 powder contained in the exhaust gas is converted into excited fluorine atoms (F), which are reactive species generated during the process of decomposing nitrogen trifluoride (NF3) using plasma. * ) to generate silicon tetrafluoride (SiF4) gas, thereby removing the SiO2 powder. By removing the SiO2 powder, deposition of the SiO2 powder on the vacuum pump (106 in FIG. 1) is prevented. Although not shown, reactive species (F* ) may be introduced into the vacuum pump (106 in FIG. 1) and react with the SiO2 powder deposited on the vacuum pump (106 in FIG. 1) to generate silicon tetrafluoride (SiF4) gas, thereby removing the SiO2 powder deposited on the vacuum pump (106 in FIG. 1).

[0059] Although the present invention has been described above through the embodiments, the present invention is not limited thereto. The above embodiments may be modified or changed without departing from the spirit and scope of the present invention, and those skilled in the art will understand that such modifications and changes also fall within the scope of the present invention.

Claims

1. 1. An equipment for pre-treating exhaust gas discharged from a semiconductor process chamber in which a semiconductor manufacturing process using a process gas is performed by a vacuum pump through a chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump, an exhaust gas reaction chamber provided on the chamber exhaust pipe; a plasma reactor that generates plasma to generate a plasma gas containing reactive species generated by decomposing a source gas, The exhaust gas reaction chamber is exhaust gas pretreatment equipment for semiconductor manufacturing facilities, and includes an exhaust gas reaction section that forms an exhaust gas reaction space inside where the components to be treated contained in the exhaust gas and the reactive active species mix and react, and a cooling means that is provided in the exhaust gas reaction section.

2. 2. The exhaust gas pretreatment equipment for semiconductor manufacturing equipment according to claim 1, wherein the cooling means comprises a cooling jacket provided outside the exhaust gas reaction section and having a cooling fluid containing space formed therein for containing a cooling fluid.

3. The cooling jacket is a plurality of jackets, 3. The exhaust gas pre-treatment equipment for semiconductor manufacturing facilities according to claim 2, wherein said cooling means further comprises a cooling fluid pipe connecting said plurality of cooling jackets.

4. 2. The exhaust gas pretreatment equipment for semiconductor manufacturing facilities according to claim 1, wherein the exhaust gas reaction section is in the form of a column that is expanded further outward than the chamber exhaust pipe.

5. 5. The exhaust gas pretreatment equipment for semiconductor manufacturing facilities according to claim 4, wherein the cooling means comprises an outer cooling jacket provided to surround the outer peripheral surface of the exhaust gas reaction section and having an outer cooling fluid storage space formed therein for storing a cooling fluid.

6. 6. The exhaust gas pretreatment equipment for semiconductor manufacturing facilities as described in claim 5, wherein the cooling means further comprises: an upstream end cooling jacket provided at the upstream end of the exhaust gas reaction section, the upstream end cooling jacket having an upstream cooling fluid storage space formed therein for storing a cooling fluid; and a downstream end cooling jacket provided at the downstream end of the exhaust gas reaction section, the downstream end cooling jacket having a downstream cooling fluid storage space formed therein for storing a cooling fluid.

7. 7. The exhaust gas pretreatment equipment for semiconductor manufacturing facilities according to claim 6, wherein the cooling means further comprises: a first connecting pipe that connects the upstream end cooling jacket and the outer circumferential cooling jacket; and a second connecting pipe that connects the downstream end cooling jacket and the outer circumferential cooling jacket.

8. 8. The exhaust gas pretreatment equipment for a semiconductor manufacturing facility according to claim 7, wherein the cooling means further comprises: a first cooling fluid inlet / outlet pipe connected to the upstream end cooling jacket; and a second cooling fluid inlet / outlet pipe connected to the downstream end cooling jacket.

9. a plasma supply pipe connecting the exhaust gas reaction chamber and the plasma reactor; 2. The exhaust gas pretreatment equipment for semiconductor manufacturing equipment according to claim 1, wherein the plasma supply pipe comprises: a plasma supply passage through which the plasma gas generated from the plasma reactor is discharged and flows; and a cooling fluid passage through which a cooling fluid flows.

10. 1. An equipment for pre-treating exhaust gas discharged from a semiconductor process chamber in which a semiconductor manufacturing process using a process gas is performed by a vacuum pump through a chamber exhaust pipe connecting the semiconductor process chamber and the vacuum pump, an exhaust gas reaction chamber provided on the chamber exhaust pipe; a plasma reactor that generates plasma and decomposes a source gas to generate a plasma gas containing reactive species; a plasma supply pipe connecting the exhaust gas reaction chamber and the plasma reactor, the plasma supply pipe includes a plasma supply passage through which the plasma gas generated from the plasma reactor is discharged and flows, and a cooling fluid passage through which a cooling fluid flows, The exhaust gas reaction chamber is exhaust gas pretreatment equipment for semiconductor manufacturing facilities, and includes an exhaust gas reaction unit that forms an exhaust gas reaction space therein in which the components to be treated contained in the exhaust gas and the reactive species flowing in through the plasma supply passage are mixed and reacted with each other.

11. The source gas is nitrogen trifluoride (NF ３ ) and The reactive species is an excited fluorine atom (F ＊ 11. The exhaust gas pretreatment equipment for a semiconductor manufacturing facility according to claim 1 or 10, comprising:

12. The exhaust gas is diborane (B ２ H ６ ), The diborane reacts with the excited fluorine atoms (F ＊ 12. The exhaust gas pretreatment equipment for a semiconductor manufacturing facility according to claim 11, wherein the carbon monoxide is removed by reacting with the carbon monoxide.

13. The tungsten deposited in the vacuum pump is excited by fluorine atoms (F ＊ 12. The exhaust gas pretreatment equipment for a semiconductor manufacturing facility according to claim 11, wherein the carbon monoxide is removed by reacting with the carbon monoxide.

14. The exhaust gas contains SiO ２ Contains powder, The SiO ２ The powder contains the excited fluorine atoms (F ＊ 12. The exhaust gas pretreatment equipment for a semiconductor manufacturing facility according to claim 11, wherein the carbon monoxide is removed by reacting with the carbon monoxide.

15. The source gas is oxygen (O ２ ) and The reactive species is an excited oxygen atom (O ＊ 11. The exhaust gas pretreatment equipment for a semiconductor manufacturing facility according to claim 1 or 10, comprising:

16. the exhaust gas contains hydrogenated amorphous carbon (aC:H); The hydrogenated amorphous carbon (aC:H) is formed by the excited oxygen atoms (O ＊ 16. The exhaust gas pretreatment equipment for a semiconductor manufacturing facility according to claim 15, wherein the carbon monoxide is removed by reacting with the carbon monoxide.

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