Substrate on foil with patterned metal components formed thereon and method for manufacturing same - Patents.com

Abstract

A substrate-on-foil formed from a metal substrate core metal having patterned intra-substrate structures therein that are made of a metal different from the metal from which the metal substrate core is formed, the patterned intra-substrate structures being separated from the metal substrate core by a dielectric material, and a method for making the same.

Description

Detailed Description of the Invention

[0001] [STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT] Not applicable. [Copyright Notice] A portion of this disclosure contains material that is subject to copyright protection. The copyright owner has no objection to the facsimile reproduction by anyone of either the patent document or the patent disclosure, precisely as it appears in the Patent and Trademark Office patent file or records, but otherwise reserves all copyright rights under 37 CFR 1.71(d).

[0002] [Reference to Related Applications] This application claims the benefit of Provisional Application No. 63 / 487,345, entitled "SYSTEM ON FOIL," filed February 28, 2023. The benefit under 35 U.S.C. § 119(e) of the U.S. provisional application is hereby claimed, and the aforementioned provisional application is incorporated herein by reference in its entirety. FIELD OF THE INVENTION

[0003] [Background of the invention concept] The present inventive concepts relate to substrates-on-foil formed from a metal substrate core having formed thereon patterned intra-substrate structures of metal, and methods for making the same. More particularly, but not exclusively, the present inventive concepts relate to substrates-on-foil formed from a metal substrate core having formed thereon patterned intra-substrate structures of metal, the metal being a different metal than the metal from which the metal substrate core is formed, and methods for making the same. [Description of Related Art]

[0004] The high cost of advancing to the next semiconductor technology node (e.g., 5nm) is changing the role of packaging in the electronics industry. At each new node, Moore's Law historically fulfills the economic and technological promise of scaling density, speed, power, and cost. However, these gains are now slowing, and new packaging solutions are needed to maintain the pace of the economic advantages previously fulfilled by silicon scaling.

[0005] Conductive through-substrate vias are required for almost all advanced packaging applications due to the large number of input / output (I / O) connections required to successfully partition system-on-chip (SoC) designs. This is because SoC designs contain millions of logic gates connected by complex wire networks in the form of multiple buses, complex clock distribution networks, and control signals. Standard device I / O imposes pin-to-pin delays that degrade overall circuit performance. Furthermore, the use of time-domain multiplexing (TDM) with standard I / O to increase virtual pin count by running multiple signals on each I / O can further increase latency, resulting in I / O speeds that can slow down by 4x to 32x or more. The TDM approach also results in higher power consumption. When used to drive hundreds of inter-package connections across PCB traces between multiple chips, standard device I / O pins incur a significant power penalty compared to connecting logic nets on a monolithic die. All of these requirements result in a demand for vias through the substrate.

[0006] Currently, there are three options for achieving feedthroughs in electronic substrates: through-panel vias (TPVs)—electrical conduits through printed circuit boards or organic substrates; through-silicon vias (TSVs)—electrically isolated copper traces through thinned silicon wafers; and through-glass vias (TGVs)—metal-filled holes through glass wafers. Processing techniques for creating conductive center pins for conductive through-vias all use electroplated copper or conductive paste screen-printing processes that use gold, silver, or copper mixed with glass powder and a polymer binder to form a conductive paste.

[0007] One issue with TPVs on printed circuit boards is the minimum resolution of the wires (metal lines), limiting space for larger features. Most printed circuit boards can pattern 4 mil (100 μm) or 3 mil (75 μm) lines and spaces, with the latest technology offering approximately 1.2 mil (30 μm), but at a very high cost. Through-panel via holes are limited to approximately 6 mil (150 μm). These large features primarily limit printed circuit boards to packaged components and do not allow for high-resolution components such as flip-chip dies. Due to the challenges of electroplating copper to fill large perforations in printed circuit boards, TPVs are typically large barrel-coated holes with an opening in the center of the via. An example of a TPV is described in U.S. Patent No. 6,717,071, "Coaxial Via Hole and Process of Fabricating the Same."

[0008] In addition to the high cost of TSVs, they also have low mechanical strength. Because silicon interposers are thinned to form TSVs, they are brittle and prone to cracking and breakage. As silicon interposer packages become larger and are attached to printed circuit boards, the mismatch in coefficient of thermal expansion (CTE) between the silicon interposer and the organic substrate can cause physical cracking or breakage of the bonding bumps. TSVs can also warp, which can hinder manufacturing or assembly and can cause phenomena such as ball grid array (BGA) non-wetting.

[0009] Through-glass vias (TGVs), and to a lesser extent through-silicon vias (TSVs), suffer from a lack of ability to dissipate heat. The glass substrate of a TGV is an insulator, and therefore can only allow heat to escape through the top of the package. TGVs are also inflexible, thus limiting their use in certain applications.

[0010] System-on-Foil™, as described in detail in PCT / US20 / 54245 "System-on-Foil™ Devices," which is incorporated herein by reference, is a system-level advanced packaging technology designed to address the shortcomings of current 2.5 / 3D packaging architectures. Within System-on-Foil™, and all advanced packages, there is a substrate with multiple wiring layers that allows surface-mounted electronic components to communicate with each other.

[0011] However, a problem with using metal substrates for HI is that larger pads and solder bumps attached to wiring layers on the metal substrate can capacitively couple to the substrate, thus limiting the high frequency bandwidth.

[0012] U.S. Patent Application No. 18 / 446,841, filed August 9, 2023, by the same inventor of the present patent application, discloses a metal substrate patterned with intra-metal substrate structures formed from the same metal body as the metal substrate itself. Figure 1A shows a metal substrate 300 patterned therein with three different intra-metal substrate structures 300m formed from the same metal body as the metal substrate 300 itself. Figure 1B shows a metal substrate 400 patterned therein with intra-metal substrate structure 402 formed from the same metal body as the metal substrate 400 itself.

[0013] Therefore, there is a need for a metal-based packaging substrate in which intra-substrate structures made of dielectrics and different metals are formed so that the electronic properties of the intra-substrate metal can be tailored to meet desired performance criteria. Furthermore, the selection of the type of intra-substrate metal allows for different processing parameters, and therefore manufacturability and cost considerations. [Summary of the inventive concept]

[0014] The present general inventive concept provides a substrate on foil that includes patterned elements of metal formed therein, and methods for making the same. More specifically, but not exclusively, the inventive concept relates to a substrate on foil that includes patterned elements of metal formed therein, the patterned elements being a different metal than the metal from which the substrate is formed, and methods for making the same.

[0015] Additional features and advantages of the present general inventive concepts will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the general inventive concepts.

[0016] The foregoing and / or other features and advantages of the present general inventive concept may be achieved by a substrate-on-foil comprising a metal substrate core, at least one intra-substrate metal structure patterned through the metal substrate core, the at least one intra-substrate metal structure being of a different type of metal than the metal of the metal substrate core, and a dielectric material completely separating the at least one intra-substrate metal structure from the metal substrate core.

[0017] In an exemplary embodiment, at least one intra-substrate metal structure is made of a metal that is more conductive than the core metal.

[0018] In another exemplary embodiment, the at least one intra-substrate metal structure is made of copper.

[0019] In another exemplary embodiment, the dielectric material is selected from the group consisting of: a) polymer, b) silicone, c) glass, d) ceramic, or any combination of ad.

[0020] In yet another exemplary embodiment, the thickness of the metal substrate core is between 200 and 400 μm.

[0021] In yet another exemplary embodiment, the thickness of the metal substrate core is between 10 and 1000 μm.

[0022] The foregoing and / or other features and advantages of the present general inventive concept can also be achieved by providing a method for fabricating a substrate-on-foil, the method including: etching at least one three-dimensional trench partially through a top surface of a metal core structure; filling the at least one three-dimensional trench with a photoresist material; etching the trenches in the photoresist material; depositing a type of metal in each trench etched in the photoresist material that is different from the type of metal comprising the metal core structure; etching away the photoresist to leave partial trenches surrounding the deposited metal; depositing a dielectric material in the partial trenches surrounding the deposited metal; and grinding backside of the metal core structure until the deposited metal and surrounding dielectric material are exposed.

[0023] The foregoing and / or other features and advantages of the present general inventive concept may also be achieved by providing a method for fabricating a substrate-on-foil, the method including: etching at least one three-dimensional trench partially through a top surface of a metal core structure; filling the at least one three-dimensional trench with a photoresist material; etching the trenches in the photoresist material; depositing a type of metal in each trench etched in the photoresist material that is different from the metal of the metal core structure; etching away the photoresist to leave trenches surrounding the deposited metal; depositing a dielectric material in the trenches surrounding the deposited metal; and inverting the metal core to form a thin film of at least one three-dimensional trench. the steps of: etching at least one three-dimensional trench partially through the backside of the metal core structure to expose at least one dielectric material and the deposited metal; filling the at least one three-dimensional trench with a photoresist material; etching trenches in the photoresist material to expose the deposited metal; depositing a metal of a different type than the metal of the metal substrate in each trench etched in the photoresist material to form a through-metal via; etching away the photoresist to leave partial trenches surrounding the deposited metal; and depositing a dielectric material in the partial trenches surrounding the deposited metal.

[0024] The foregoing and / or other features and advantages of the present general inventive concept may also be achieved by providing a method for fabricating a substrate-on-foil, the method including: etching at least one three-dimensional trench partially through a top surface of a metal core structure; filling the at least one three-dimensional trench with a dielectric material; etching the trenches into the dielectric material; depositing a type of metal in each trench etched into the dielectric material that is different from the type of metal comprising the metal core structure; and grinding backside of the metal core structure until the deposited metal and surrounding dielectric material are exposed. The foregoing and / or other features and advantages of the present general inventive concept can also be achieved by providing a method for fabricating a substrate-on-foil, the method comprising: etching at least one three-dimensional trench partially through a metal core structure from its top surface; filling the at least one three-dimensional trench with a dielectric material; etching the trenches into the dielectric material; depositing a type of metal in each trench etched in the dielectric material that is different from the type of metal comprising the metal core structure; etching the at least one three-dimensional trench through the metal core structure from a back surface of the metal core structure until the deposited metal and the dielectric material are exposed; filling the at least one three-dimensional trench with a dielectric material; etching the trenches into the dielectric material until the deposited metal is exposed; and depositing a type of metal in each trench etched in the dielectric material to form a through-metal via. [Brief explanation of the drawings]

[0025] These and / or other features and advantages of the inventive concept will become apparent and more readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings.

[0026] [Figure 1A] 1 illustrates a substrate-on-foil patent currently pending by the applicant.

[0027] [Figure 1B] FIG. 1 shows another substrate-on-foil currently pending patent by the applicant.

[0028] [Figure 2] 1 illustrates a substrate-on-foil according to an exemplary embodiment of the inventive concept.

[0029] [Figures 2A-2I] 3A-3D illustrate process steps for manufacturing the substrate-on-foil shown in FIG. 2.

[0030] [Figure 3] FIG. 10 illustrates a substrate-on-foil according to another exemplary embodiment of the inventive concept.

[0031] [Figure 3A-3G] 4A-4D illustrate process steps for manufacturing the substrate-on-foil shown in FIG. 3.

[0032] The drawings illustrate some exemplary embodiments of the inventive concept and should not be considered as limiting its scope, as the overall inventive concept may admit of other equally effective embodiments. The elements and features shown in the drawings are to scale and are intended to clearly illustrate the principles of exemplary embodiments of the inventive concept. In the drawings, reference numerals indicate the same or corresponding, but not necessarily identical, elements throughout the several views. Detailed Description of the Preferred Embodiments

[0033] Reference will now be made in detail to embodiments of the present general inventive concept, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. Hereinafter, embodiments will be described with reference to the drawings to explain the general concept of the present invention. Furthermore, while describing the present general inventive concept, detailed descriptions of related well-known functions or configurations that may obscure the point of the present general inventive concept will be omitted.

[0034] Although the terms "first" and "second" are used herein to describe various elements, it will be understood that these elements are not to be limited by these terms. These terms are used only to distinguish one element from another. Thus, a first element could be termed a second element, and similarly, a second element could be termed a first element, without departing from the teachings of the present disclosure.

[0035] A phrase such as "at least one of," when preceding a list of elements, modifies the entire list of elements, and does not modify any individual element of the list.

[0036] All terms, including descriptive or technical terms, used herein should be interpreted as having meanings that are clear to those skilled in the art. However, the meaning of a term may differ depending on the inventor's intention, legal precedents, the emergence of new technology, etc. In addition, some terms may be arbitrarily selected by the inventor, and in such cases, the meaning of the selected term will be explained in detail in the detailed description of this specification. Therefore, the terms used herein should be defined based on the commonly defined meaning of the term along with the explanation of this entire specification.

[0037] One or more exemplary embodiments of the present general inventive concept are described in detail below with reference to the accompanying drawings.

[0038] An exemplary embodiment of the present general inventive concept relates to a substrate-on-foil that includes a metal substrate core and a metal component structure patterned within the metal substrate core that is formed from a metal different from and separate from the metal substrate core, and a method for making the same.

[0039] FIG. 2 illustrates a substrate-on-foil 200 according to an exemplary embodiment of the inventive concept. More specifically, FIG. 2 illustrates a substrate-on-foil 200 including a metal core 202 patterned with a metal component structure 206 formed of a metal different from the metal core 202 itself. According to an exemplary embodiment, the metal substrate core may have a thickness of 10-1000 μm from top to back. However, typical embodiments may have a core thickness between 50-500 μm, or even narrower, a core thickness between 100-250 μm from top to back. The metal component structure 206 may be separated from the metal core 202 by a dielectric material 208. According to an exemplary embodiment, the dielectric material 208 may be formed from silicon dioxide (SiO2). Alternatively, the dielectric material may be selected from the group consisting of a) polymer, b) silicone, c) glass, d) ceramic, or any combination of a-d. The metal substrate may be composed of a material selected from the group consisting of a) molybdenum, b) iron, c) titanium, d) chromium, e) tantalum, f) tungsten, g) copper, h) nickel, i) vanadium, j) aluminum, k) cobalt, or any alloy containing a)-k).

[0040] The metal component structure 206 can be patterned to create any type of intra-substrate structure (ISS) desired, depending on the ISS required to complete the semiconductor package and / or semiconductor substrate into which the foil substrate 200 is incorporated. The metal component structure 206 is preferably formed from copper. However, other types of metals that provide the intended purpose described herein can be used for the metal component structure 206 without departing from the spirit and scope of the overall inventive concept.

[0041] 2A-2G illustrate process steps for manufacturing a substrate-on-foil 200 according to the exemplary embodiment shown in FIG.

[0042] FIG. 2A shows a foil or metal substrate 202 .

[0043] 2B illustrates a process for etching trenches 202a in a metal substrate 202. The trenches 202a can be etched into any three-dimensional (3D) shape. The etching process can be performed by laser ablating the top of the metal substrate 202 to form the partially through trenches 202a.

[0044] 2C illustrates a process for depositing photoresist 204 into trench 202a. Photoresist 204 may be deposited into trench 202a by a spin-coating process. However, photoresist layer 204 may be deposited into trench 202a by any other equivalent deposition process that serves the intended purpose of filling trench 202a with photoresist 204.

[0045] 2D illustrates the step of etching the deposited photoresist 204. After the photoresist layer 204 is deposited in the trench 202a, the photoresist 204 can be partially etched to form another trench 204a that exposes a portion of the top of the metal core 202, as shown in FIG.

[0046] 2E illustrates a process for depositing metal 206 within trench 204a formed in photoresist layer 204. The metal 206 deposited within trench 204a may be copper and may be deposited via an electroplating process or other chemical bath process, or a gas-phase process (these methodologies encompass techniques such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), and molecular beam epitaxy (MBE), among others, which allows flexibility in selecting an appropriate deposition method based on desired material properties, feature size, and process compatibility). Alternatively, metal 206 may be deposited within trench 204a by other known metal deposition processes that completely fill trench 204a.

[0047] 2F illustrates the process of stripping the remaining photoresist 204 from the trench 202a, thus leaving only the metal 206 within the trench 202a. This stripping process can be performed via an etching bath or other known photoresist stripping process.

[0048] Next, referring to FIG. 2G, the remaining portion of trench 202a can be filled with dielectric material 208 to surround metal structure 206, thus forming metal core 202 formed with different metal structure 206 surrounded by dielectric material 208.

[0049] 2H illustrates a process, according to an exemplary embodiment of the inventive concepts, for converting the structure shown in FIG. 2G into a substrate-on-foil 200 including a metal core 202 patterned with metal component structures 206 formed from a different metal than the metal core 202 itself and separated from the metal core 202. In this exemplary embodiment, the metal core 202 structure shown in FIG. 2G can be back-ground to expose both the dielectric material 208 and the metal patterned structures 206, which are separated from the metal core 202 by the surrounding dielectric material 208. The process according to this exemplary embodiment results in a substrate-on-foil 200 that is thinner than the original metal core 202.

[0050] FIG. 2I illustrates a process for converting the structure shown in FIG. 2G into a substrate-on-foil 200 including a metal core 202 patterned with metal component structures 206 formed of a metal different from and separated from the metal core 202, according to another exemplary embodiment of the inventive concept. In this exemplary embodiment, the metal core 202 structure shown in FIG. 2G can be flipped over so that the same processes described with reference to FIGS. 2A-2G can be performed on the back side of the metal core 202. More specifically, another process can be performed to etch trenches on the back side of the metal substrate 202 such that the newly etched trenches align with the trenches originally formed on the top surface of the metal core 202. After the processes described with reference to FIGS. 2A-2G are performed, the identical metal structures 206 and dielectric material 208 connect with the originally formed metal structures 206 and dielectric material 208 to form a substrate-on-foil 200 having intra-substrate metal structures 206 extending through the metal substrate 202 and separated from the metal substrate 202 by the dielectric material 208. The foil substrate 200 according to this exemplary embodiment has the same thickness as the original metal core 202 .

[0051] It should be noted that other metal intra-substrate structures besides the illustrated coaxial intra-substrate structure 206 can be patterned in the metal core 202 by a process similar to that described above with respect to FIG. 2I, but instead of laser ablation and patterning aligned with the top surface of the metal core 202, a different location of laser ablation and patterning can be performed on the back surface of the metal core 202, resulting in nonlinear metal intra-substrate structures that can be used to form other ISSs, such as antennas, waveguides, etc., without departing from the spirit and scope of the overall concept of the present invention.

[0052] FIG. 3 illustrates a substrate-on-foil 300 according to another exemplary embodiment of the inventive concept. More specifically, FIG. 3 illustrates a substrate-on-foil 200 including a metal core 302 patterned with a metal component structure 306 formed of a metal different from the metal core 302 itself. According to an exemplary embodiment, the metal substrate core may have a thickness of 10-1000 μm from top to back. However, typical embodiments may have a core thickness between 50-500 μm, or even narrower, a core thickness between 100-250 μm from top to back. The metal component structure 306 is separated from the metal core 302 by a dielectric material 308. According to an exemplary embodiment, the dielectric material 208 may be formed from silicon dioxide (SiO2). The dielectric material may also be selected from the group consisting of a) polymer, b) silicone, c) glass, d) ceramic, or any combination of a-d. As used herein, the term polymer is intended to include all carbon-based long-chain molecules, such as thermoplastics and thermosets, and silicones include all silicon / oxygen-based molecules. To create hermetic vias, inorganic materials such as glass are used as dielectric materials. To make a via truly hermetic, not only is an inorganic dielectric material required, but adequate bonding between the metal substrate and the dielectric material, as well as a reasonable CTE match between the metal substrate and the dielectric material, must also be achieved. A key characteristic of dielectric isolation regions is that they prevent current from flowing across them.

[0053] The metal substrate can be composed of a metallic material selected from the group consisting of a) molybdenum, b) iron, c) titanium, d) chromium, e) tantalum, f) tungsten, g) copper, h) nickel, i) vanadium, j) aluminum, k) cobalt, or any alloy containing a) through k). One of the most useful metal alloys in the hermetic seal industry is alloy 52, which consists of 50.5% Ni and the remainder Fe. Alloy 52 typically contains a small amount of chromium to aid bonding to dielectric insulating glass. The high nickel content in alloy 52 gives the substrate a low CTE of about 54 × 10-7 / °C (5.4 ppm / °C), making it a good candidate for the electronic packaging industry. Molybdenum, with its CTE of 48 × 10-7 / °C (4.8 ppm / °C) at 25°C and high thermal conductivity (138 W / mK), makes the substrate an even better candidate for electronic packaging.

[0054] The metal component structure 306 can be patterned to form any type of structural form desired depending on the intra-substrate structure ISS required for the intended circuit with which the metal component structure 306 is integrated. The metal component structure 306 is preferably formed from copper. However, other types of metals that provide the intended purpose described herein can be used without departing from the spirit and scope of the overall inventive concept.

[0055] 3A-3G illustrate process steps for manufacturing a substrate-on-foil 300 according to the exemplary embodiment shown in FIG.

[0056] FIG. 3A shows a foil or metal substrate 302 .

[0057] 3B illustrates a process for etching trenches 302a in a metal substrate 302. The trenches 302a can be etched into any three-dimensional (3D) shape. The etching process can be performed by laser ablating the top of the metal substrate 302 to form the partially through trenches 302a.

[0058] 3C illustrates a process for depositing a dielectric material 304 into the trench 302a. The dielectric material 304 can be deposited into the trench 302a by any known dielectric deposition process. The dielectric material 304 can be silicon dioxide (SiO2) or other materials with good dielectric properties.

[0059] 3D illustrates a step of etching the dielectric material 304. After the dielectric material 304 is deposited in the trench 302a, the dielectric material 304 can be partially etched to form another trench 304a that exposes a portion of the top of the metal core 302, as shown in FIG.

[0060] 3E illustrates a process for depositing metal 306 within trench 304a formed in dielectric material 304. The metal 306 deposited within trench 304a may be copper and may be deposited via an electroplating process. Alternatively, metal 306 may be deposited within trench 304a by other known metal deposition processes that completely fill trench 304a.

[0061] 3F illustrates a process for converting the structure shown in FIG. 3E into a substrate-on-foil 300 including a metal core 302 patterned with metal component structures 306 formed from a different metal than the metal core 302 itself and separated from the metal core 302, according to an exemplary embodiment of the inventive concepts. In this exemplary embodiment, the metal core 302 structure shown in FIG. 3E can be back-ground to expose both the dielectric material 304 and the metal patterned structures 306 separated from the metal core 302 by the surrounding dielectric material 304. This exemplary process results in a substrate-on-foil 300 that is thinner than the original metal core 302.

[0062] FIG. 3G illustrates a process for converting the structure shown in FIG. 3E into a substrate-on-foil 300 including a metal core 302 patterned with metal component structures 306 formed from a different metal than the metal core 302 itself and separated from the metal core 302, according to another exemplary embodiment of the inventive concept. In this exemplary embodiment, the metal core 302 structure shown in FIG. 3E can be flipped over so that the same processes described with reference to FIGS. 3A-3E can be performed on the back side of the metal core 302. More specifically, another process can be performed to etch trenches on the back side of the metal substrate 302 such that the newly etched trenches align with the trenches originally formed on the top surface of the metal core 302. After the processes described with reference to FIGS. 3A-3E are performed, the identical structures 306 and dielectric material 304 connect with the originally formed structures 306 and dielectric material 304 to form a substrate-on-foil 300 having the same thickness as the original metal core 302.

[0063] It should be noted that other metal intra-substrate structures besides the illustrated coaxial intra-substrate structure 306 can be patterned within the metal core 302 by a process similar to that described above with respect to FIG. 3G, but instead of laser ablation and patterning aligned with the top surface of the metal core 302, a different location of laser ablation and patterning can be performed on the back surface of the metal core 302, resulting in nonlinear metal intra-substrate structures that can be used to form other ISSs, such as antennas, waveguides, etc., without departing from the spirit and scope of the overall concept of the present invention.

[0064] While several embodiments of the present general inventive concept have been shown and described, those skilled in the art will understand that changes can be made to these embodiments without departing from the principles and spirit of the general inventive concept, the scope of which is defined in the appended claims and their equivalents.

Claims

1. a metal substrate core; at least one intra-substrate metal structure patterned through said metal substrate core, said at least one intra-substrate metal structure being of a different type of metal than the metal of said metal substrate core; a dielectric material that completely separates the at least one intra-substrate metal structure from the metal substrate core; a substrate-on-foil comprising:

2. The substrate-on-foil of claim 1 , wherein the at least one intra-substrate metal structure is made from a metal that is more conductive than the core metal.

3. The substrate-on-foil of claim 2 , wherein the at least one intra-substrate metal structure is made from copper.

4. 2. The substrate-on-foil of claim 1, wherein the dielectric material is selected from the group consisting of a) polymer, b) silicone, c) glass, d) ceramic, or any combination of ad.

5. 2. The substrate-on-foil of claim 1, wherein the thickness of the metal substrate core is 10 to 1000 μm.

6. 1. A method for manufacturing a substrate on foil, comprising: Etching at least one three-dimensional trench partially through the metal core structure from a top surface thereof; filling the at least one three-dimensional trench with a photoresist material; Etching a trench in the photoresist material; depositing a type of metal in each trench etched in the photoresist material that is different from the type of metal comprising the metal core structure; etching away the photoresist to leave a partial trench surrounding the deposited metal; depositing a dielectric material in the partial trench surrounding the deposited metal; grinding the backside of the metal core structure until the deposited metal and surrounding dielectric material are exposed; A method comprising:

7. 1. A method for manufacturing a substrate on foil, comprising: Etching at least one three-dimensional trench partially through the metal core structure from a top surface thereof; filling the at least one three-dimensional trench with a photoresist material; Etching a trench in the photoresist material; depositing a metal of a different type than the metal of the metal core structure in each trench etched in the photoresist material; etching away the photoresist to leave a trench surrounding the deposited metal; depositing a dielectric material in the trench surrounding the deposited metal; Inverting the metal core etching at least one three-dimensional trench partially through the backside of the metal core structure to expose the at least one dielectric material and deposited metal; filling the at least one three-dimensional trench with a photoresist material; etching a trench in the photoresist material to expose the deposited metal; depositing a metal different from the metal of the metal substrate in each trench etched in the photoresist material to form a through metal via; etching away the photoresist to leave a partial trench surrounding the deposited metal; depositing a dielectric material in the partial trench surrounding the deposited metal; To carry out A method comprising:

8. 1. A method for manufacturing a substrate on foil, comprising: Etching at least one three-dimensional trench partially through the metal core structure from a top surface thereof; filling the at least one three-dimensional trench with a dielectric material; Etching a trench into the dielectric material; depositing a type of metal in each trench etched in the dielectric material that is different from the type of metal comprising the metal core structure; grinding the backside of the metal core structure until the deposited metal and surrounding dielectric material are exposed; A method comprising:

9. 1. A method for manufacturing a substrate on foil, comprising: Etching at least one three-dimensional trench partially through the metal core structure from a top surface thereof; filling the at least one three-dimensional trench with a dielectric material; Etching a trench into the dielectric material; depositing a type of metal in each trench etched in the dielectric material that is different from the type of metal comprising the metal core structure; etching at least one three-dimensional trench through the metal core structure from a back surface of the metal core structure until the deposited metal and dielectric material is exposed; filling the at least one three-dimensional trench with a dielectric material; etching a trench into the dielectric material until the deposited metal is exposed; depositing a type of metal different from the type of metal comprising said metal core structure into each trench etched into said dielectric material to form a through metal via; A method comprising:

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