Perovskite cells, photovoltaic assemblies, photovoltaic power generating systems and power consuming devices
By integrating light conversion materials within the gaps of three-dimensional perovskite crystal grains, the solar spectrum utilization and energy conversion efficiency of photovoltaic cells are improved, addressing the limitations of fixed optical bandgap technologies.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-04-25
- Publication Date
- 2026-03-10
AI Technical Summary
Existing photovoltaic technologies face challenges with fixed optical band technologies that have not yet been able to fully utilize the solar spectrum, which results in energy loss and affecting the energy conversion efficiency.
The introduction of a broad absorption spectrum perovskite layer with a three-dimensional perovskite and light conversion materials, such as up-conversion and down-conversion materials, distributed within the gaps between crystal grains to broaden the absorption wavelength band and improve solar spectrum utilization.
This approach reduces heterointerfaces, lowers series resistance, maintains the perovskite cell's inherent structure, and enhances energy conversion efficiency by fully absorbing solar photons.
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Figure 2026508342000001_ABST
Abstract
Description
[Technical Field]
[0001] This application relates to the photovoltaic technology field, and in particular to perovskite cells, photovoltaic assemblies, photovoltaic power generation systems and power consuming devices. [Background technology]
[0002] Perovskite materials can effectively absorb solar energy as a light-absorbing layer. However, the light-absorbing layer materials (e.g., perovskite) in conventional photovoltaic devices have fixed optical bandgaps, which means that their absorption spectra are fixed and the solar spectrum cannot be fully utilized, resulting in energy loss and affecting energy conversion efficiency. Summary of the Invention [Problem to be solved by the invention]
[0003] The present application provides perovskite cells, photovoltaic assemblies, photovoltaic power generation systems, and power consumption devices that can improve the technical problems of conventional perovskite cells, such as low solar spectrum utilization and low energy conversion efficiency. [Means for solving the problem]
[0004] According to a first aspect, an embodiment of the present application provides a perovskite cell including a broad absorption spectrum perovskite layer located between a transparent substrate layer and an electrode layer, the broad absorption spectrum perovskite layer including a three-dimensional perovskite and a light conversion material, at least a portion of the light conversion material being distributed in gaps between crystal grains of the three-dimensional perovskite, and the light conversion material including at least one of an up-conversion material and a down-conversion material.
[0005] In the technical solution of the embodiment of the present application, a light-converting material is introduced into the broad-absorption-spectrum perovskite layer to convert the solar spectrum, so that the emitted spectrum falls within the absorption spectrum of the three-dimensional perovskite, thereby broadening the absorption wavelength band of the broad-absorption-spectrum perovskite layer and effectively improving the utilization rate of the solar spectrum and the energy conversion efficiency of the perovskite cell. The arrangement in which at least a portion of the light-converting material is distributed in the gaps between the three-dimensional perovskite crystal grains is advantageous to reduce the number of heterointerfaces, lower the series resistance of the entire device, maintain the advantages of the inherent structure of the perovskite cell, reduce process complexity, mitigate defects caused by the introduction of interfaces, and form a bulk phase structure that is advantageous to fully absorb solar photons and improve the energy conversion efficiency.
[0006] In some embodiments, the light conversion material includes an upconversion material and a downconversion material. The upconversion material is used to absorb photons in the long wavelength band (low energy) and convert them into the visible wavelength band that can be effectively absorbed by the three-dimensional perovskite, and the downconversion material is used to absorb photons in the short wavelength band (high energy) and convert them into the visible wavelength band that can be effectively absorbed by the three-dimensional perovskite. This ensures that the emission spectrum of the light conversion material is within the absorption spectrum of the three-dimensional perovskite, and simultaneously extends the absorption spectrum of the perovskite to the infrared and ultraviolet wavelength bands, which is advantageous for improving the utilization of the solar spectrum and improving energy conversion efficiency.
[0007] In some embodiments, the mass ratio of the upconversion material to the downconversion material is 1:6 to 6:1. Controlling the mass ratio of the upconversion material to the downconversion material to be appropriate helps improve the energy conversion efficiency, and prevents the solar spectrum utilization rate and energy conversion efficiency from being affected by adding too much or too little of either conversion material.
[0008] In some embodiments, the mass percent content of the upconversion material relative to the mass of the broad absorption spectrum perovskite layer is 6% or less, and optionally 1-6%. Rationally controlling the mass percent content of the upconversion material in the broad absorption spectrum perovskite layer is advantageous for improving the energy conversion efficiency of the broad absorption spectrum perovskite layer.
[0009] In some embodiments, the mass percent content of the down-conversion material relative to the mass of the broad absorption spectrum perovskite layer is 6% or less, and optionally 1-6%. Rationally controlling the mass percent content of the down-conversion material in the broad absorption spectrum perovskite layer is advantageous to improving the energy conversion efficiency of the broad absorption spectrum perovskite layer.
[0010] In some embodiments, the upconversion material can convert light having a wavelength longer than 800 nm into visible light having a wavelength shorter than 800 nm, i.e., the upconversion material can convert light having a wavelength longer than 800 nm into visible light having a wavelength shorter than 800 nm, which can be absorbed by the three-dimensional perovskite, thereby improving the utilization efficiency of sunlight.
[0011] In some embodiments, the components of the upconversion material include at least one of NaLuF4, NaGdF4, NaYbF4, NaYGd, NaYLu, NaYNd, NaGd(WO4)2, LiErF, BaYF5, BaLuF5, BaGdF5, BaYb2F, CaS, LiLa(MoO4)2, Gd2O3, ZrYO, YAIO, CaWO4, 2,4,5,6-tetrakis(9H-carbazol-9-yl)isophthalonitrile, thioxanthone, triphenylamine, and rare earth dopants and derivatives of each of the foregoing components.
[0012] Optionally, the rare earth element includes at least one of Yb, Er, Tm, Eu, Sm, Bi, and Ho. Each of the above upconversion materials can convert sunlight into light whose wavelength is absorbed by the three-dimensional perovskite, thereby improving the utilization efficiency of sunlight, and can be installed independently of the three-dimensional perovskite and distributed in the gaps between the crystal grains of the three-dimensional perovskite.
[0013] In some embodiments, the down-conversion material can convert light with a wavelength shorter than 400 nm into visible light with a wavelength longer than 400 nm, i.e., the down-conversion material can convert light with a wavelength shorter than 400 nm into visible light with a wavelength longer than 400 nm for absorption by the three-dimensional perovskite, thereby not only improving the solar light utilization efficiency but also avoiding damage caused by direct absorption of light with a wavelength shorter than 400 nm by the three-dimensional perovskite.
[0014] In some embodiments, the down-conversion material comprises at least one of a fluorescent material, a phosphorescent material, and a thermally activated delayed fluorescent material.
[0015] Optionally, the fluorescent material component includes at least one of riboflavin, phycoerythrin, metal complexes, polyfluorene-based compounds, coumarin-based compounds, naphthalimide-based compounds, triacene or higher acene-based compounds, rhodamine-based compounds, fluorescein-based compounds, fluoroboron dipyrrole-based compounds, resorufin-based compounds, pyrazoline-based compounds, triphenylamine-based compounds, carbazole-based compounds, green fluorescent protein, diamine-based fluorescent compounds, and perovskite luminescent nanomaterials.
[0016] Optionally, the phosphorescent material comprises a substrate and an activator, the substrate comprising at least one of sulfides, oxides, selenides, fluorides, phosphates, silicates, and tungstates of Group II metals, and the activator comprising a heavy metal.
[0017] Optionally, in the phosphorescent material, the heavy metal includes at least one of Au, Cu, Mn, Ag, Bi, Pb, and rare earth metals. The fluorescent material and phosphorescent material can convert sunlight into light whose wavelength is absorbed by the three-dimensional perovskite, thereby improving the solar light utilization efficiency, and can be installed independently of the three-dimensional perovskite and distributed in the gaps between the crystal grains of the three-dimensional perovskite.
[0018] In some embodiments, at least a portion of the light-converting material is in a particulate form and dispersed within the three-dimensional perovskite while maintaining the particulate form. Optionally, the D90 particle size of the light-converting material is 40 nm or less. This setting is advantageous for the light-converting material to be distributed in the interstices between the crystal grains of the three-dimensional perovskite, reducing the adverse effect of the particles on the three-dimensional perovskite.
[0019] In some embodiments, the broad absorption spectrum perovskite layer has a thickness of 400 to 600 nm. Controlling the broad absorption spectrum perovskite layer to have a reasonable thickness is advantageous in avoiding an excessively thick or thin layer that would affect carrier separation and improving energy conversion efficiency.
[0020] In some embodiments, the broad absorption spectrum perovskite layer has an absorption spectrum of 300-1100 nm, which extends the absorption spectrum to the infrared and ultraviolet wavelength bands, improving the solar spectrum utilization rate and significantly improving the performance of perovskite cells.
[0021] In some embodiments, a perovskite battery includes a transparent substrate layer, a first carrier transport layer, a broad absorption spectrum perovskite layer, a second carrier transport layer, and an electrode layer, which are stacked in order, and one of the first carrier transport layer and the second carrier transport layer is an electron transport layer and the other is a hole transport layer. The perovskite battery has a simple structure and is easy to fabricate.
[0022] According to a second aspect, the present application provides a photovoltaic assembly including a perovskite cell according to any of the above embodiments.
[0023] According to a third aspect, the present application provides a photovoltaic power generation system including a plurality of electrically connected photovoltaic assemblies according to the above embodiments.
[0024] According to a fourth aspect, the present application provides a power consuming device comprising a plurality of electrically connected photovoltaic assemblies of any of the above embodiments.
[0025] The above description is only a summary of the technical solution of the present application. In order to more clearly understand the technical solution of the present application, the following provides specific embodiments of the present application, which can be implemented according to the content of the specification, and to more clearly understand the above and other objectives, features and advantages of the present application. [Brief explanation of the drawings]
[0026] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of the preferred embodiments. The drawings are for the purpose of illustrating the preferred embodiments and should not be construed as limiting the present application. In the drawings, like elements use like reference numerals.
[0027] The drawings are as follows:
[0028] [Figure 1] FIG. 1 is a structural schematic diagram of a first perovskite battery according to an embodiment of the present application. [Figure 2] FIG. 2 is a structural schematic diagram of a second perovskite battery according to an embodiment of the present application. [Figure 3] 1 is a structural schematic diagram of a photovoltaic assembly according to an embodiment of the present application; DETAILED DESCRIPTION OF THE INVENTION
[0029] The following detailed description will be given of the embodiments of the technical solution of the present application with reference to the drawings. The following embodiments are only used to more clearly explain the technical solution of the present application, and are merely examples, which do not limit the scope of protection of the present application.
[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs, and the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The terms "including" and "having" and their variants in the specification and claims of this application, as well as the description of the drawings above, are intended to be non-exclusive.
[0031] In the description of the embodiments of the present application, the terms "first," "second," etc. are merely used to distinguish between different objects, and should not be understood as indicating or implying relative importance, or the quantity, specific order, or hierarchical relationship of the technical features shown. In the description of the embodiments of the present application, unless otherwise clearly limited, "plurality" means two or more.
[0032] References to "embodiments" herein mean that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the present application. Appearances of the term "embodiment" in various places in this specification do not necessarily refer to the same embodiment, nor do they refer to embodiments that are mutually exclusive, independent, or alternative to other embodiments. Those skilled in the art can explicitly and implicitly understand that embodiments described herein may be combined with other embodiments.
[0033] The term "and / or" in the description of the embodiments of the present application merely describes the relationship between related objects and indicates that three types of relationships can exist. For example, A and / or B can indicate three situations: A exists alone, A and B exist simultaneously, or B exists alone.
[0034] In describing the embodiments of the present application, the term "plurality" refers to two or more (including two); similarly, "multiple sets" refers to two or more (including two sets), and "multiple sheets" refers to two or more (including two).
[0035] In describing the embodiments of the present application, the orientations or positional relationships indicated by terms such as "thickness," "upper," "lower," "inner," and "outer" are based on the orientations or positional relationships shown in the drawings and are intended merely to facilitate and simplify the description of the embodiments of the present application, and do not indicate or imply that the subject devices or elements have a particular orientation or should be configured or operated in a particular orientation, and therefore should not be understood as limiting the embodiments of the present application.
[0036] In describing the embodiments of the present application, unless otherwise clearly specified or limited, the terms "attach" and "connect" should be understood in a broad sense, and may refer to, for example, a fixed connection, a detachable connection, or an integral connection. They may be mechanically connected or electrically connected. They may be directly connected, indirectly connected via an intermediate medium, or may be internal communication between two elements or an interactive relationship between two parts. Those skilled in the art will be able to understand the specific meanings of the above terms in the embodiments of the present application according to specific circumstances.
[0037] As a clean energy battery, solar cells are currently being used in a wide range of applications due to the development of the market. Solar cells are not only used in photovoltaic power generation systems such as solar power plants, but are also gradually being used in power consumption devices such as electric vehicles. As the application fields of solar cells continue to expand, the demand for them in the market is also constantly increasing.
[0038] Perovskite solar cells have advantages such as high energy conversion efficiency and low power generation costs, and as such have seen growing research and application in recent years. In perovskite solar cells, the light-absorbing layer is primarily made of perovskite material. When irradiated with sunlight, the perovskite layer first absorbs photons to generate electron-hole pairs (excitons). Under the action of the pn junction electric field, the excitons are first separated into electrons and holes and transported to the cathode and anode, respectively. The photo-generated holes flow to the p region and the photo-generated electrons flow to the n region, completing the circuit and forming an electric current.
[0039] However, current perovskite solar cells have a fixed optical bandgap in the perovskite layer, which means that the absorption spectrum is fixed and the solar spectrum cannot be fully utilized. Long-wavelength bands are directly transmitted through the light-absorbing layer, while short-wavelength bands are absorbed by the light-absorbing layer, which causes significant damage to the material, resulting in energy loss and affecting energy conversion efficiency. To solve this problem, current designs are expected to solve the problem by introducing an up-conversion film layer or a down-conversion film layer. However, this installation process is complicated and does not effectively improve energy conversion efficiency. This is because the number of hetero-interfaces increases, the overall series resistance increases, and a large number of defects are likely to occur at the interfaces, which can lead to the above problems.
[0040] Therefore, the present application employs an installation form in which the light conversion material is directly distributed within the three-dimensional perovskite, which is advantageous in reducing the number of heterointerfaces, avoiding defects introduced by the interfaces, and reducing the series resistance of the entire device. It also maintains the inherent structural advantages of perovskite cells, reduces process complexity, and forms a bulk phase structure that can fully absorb solar photons, improve energy conversion efficiency, and has fewer internal defects, resulting in stable device performance.
[0041] The technical solutions of the present application are illustrated by way of example below with reference to the examples.
[0042] 1 and 2 , according to some embodiments of the present application, a perovskite cell 100 includes a broad absorption spectrum perovskite layer 130 located between a transparent substrate layer 110 and an electrode layer 150. The broad absorption spectrum perovskite layer 130 includes a three-dimensional perovskite and a light conversion material, where at least a portion of the light conversion material is distributed in the interstices between the crystal grains of the three-dimensional perovskite, and the light conversion material includes at least one of an up-conversion material and a down-conversion material.
[0043] Three-dimensional perovskite means that the ions that make up the perovskite are arranged in three dimensions, forming a three-dimensional perovskite structure. The interstices between the crystal grains of three-dimensional perovskite refer to the gaps between the crystal grains of the three-dimensional perovskite.
[0044] Light conversion materials refer to photoluminescent materials whose emission spectrum is within the absorption spectrum of three-dimensional perovskite. Upconversion materials, also known as upconversion luminescent materials, refer to materials that convert two or more low-energy photons into one high-energy photon, thereby converting long-wavelength light into short-wavelength light. Downconversion materials, also known as downconversion luminescent materials, refer to materials that can absorb one high-energy photon and then emit two or more low-energy photons, thereby converting short-wavelength light into long-wavelength light.
[0045] Light conversion material refers to at least one of an upconversion material and a downconversion material, and the light conversion material may be an upconversion material, a downconversion material, or a mixture of both.
[0046] The emission spectrum of the light conversion material is within the absorption spectrum of the three-dimensional perovskite means that the light emitted by the up-conversion material and / or the down-conversion material after converting the absorbed photons is absorbed by the three-dimensional perovskite.
[0047] The phrase "at least a portion of the light conversion material is distributed in the gaps between the crystal grains of the three-dimensional perovskite" includes a situation in which a portion of the light conversion material is distributed on the surface of the three-dimensional perovskite and the remaining portion is distributed in the gaps between the crystal grains of the three-dimensional perovskite, or a situation in which all of the light conversion material is distributed in the gaps between the crystal grains of the three-dimensional perovskite.
[0048] In the technical solutions of the embodiments of the present application, a light conversion material is introduced to convert the solar spectrum so that the emitted spectrum falls within the absorption spectrum of the three-dimensional perovskite, thereby broadening the absorption wavelength band of the broad-absorption-spectrum perovskite layer 130 and effectively improving the utilization of the solar spectrum and the energy conversion efficiency of the perovskite cell 100. The arrangement in which at least a portion of the light conversion material is distributed in the gaps between the three-dimensional perovskite crystal grains is advantageous to reduce the number of heterointerfaces, lower the series resistance of the entire device, maintain the advantages of the inherent structure of the perovskite cell 100, reduce process complexity, mitigate defects caused by the introduction of interfaces, and form a bulk phase structure that is advantageous to fully absorb solar photons and improve energy conversion efficiency.
[0049] Alternatively, the three-dimensional perovskite satisfies the general formula ABX3, where A is an inorganic, organic or mixed organic-inorganic cation, B is an inorganic, organic or mixed organic-inorganic cation, and X is an inorganic, organic or mixed organic-inorganic anion.
[0050] The expression "A is an inorganic, organic, or mixed organic-inorganic cation" means that A is at least one of an inorganic cation and an organic cation.
[0051] For example, A is CH3NH3 + (Abbreviation MA + ), CH(NH2) 2+ (Abbreviation FA + ), Li + , Na + , K. + , Rb + and Cs +and optionally, A is selected from at least one of CH3NH3 + , CH(NH2) 2+ and Cs + For example, B is selected from at least one of Pb 2+ , Sn 2+ , Be 2+ , Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ , Zn 2+ , Ge 2+ , Fe 2+ , Co 2+ and Ni 2+ and optionally, B is selected from at least one of Pb 2+ , Sn 2+ For example, X is selected from one or two of F. - , Cl - , Br - and I - and optionally, X is selected from at least one of Cl - , Br - and I - is selected from at least one of:
[0052] Alternatively, the perovskite material may be CH3NH3PbI3 (abbreviated as MAPbI3), CH(NH2)2PbI3 (abbreviated as FAPbI3), Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 (abbreviated as CsFAMA), CsPbI3, CsPbI2Br, CsPbIBr2.
[0053] The perovskite cell 100 is a perovskite solar cell, which generally includes a transparent substrate layer 110, and functional layers such as a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and an electrode layer 150. In this application, the broad absorption spectrum perovskite layer 130 is defined as the perovskite light-absorbing layer.
[0054] The types of the transparent substrate layer 110 include, but are not limited to, FTO (fluorine-doped SnO2 transparent conductive glass), ITO (indium tin oxide transparent conductive glass), AZO (aluminum-doped zinc oxide transparent conductive glass), BZO (benzodiazepine transparent conductive glass), and IZO (indium zinc oxide transparent conductive glass).
[0055] The electron transport material used in the electron transport layer is, for example, at least one of imide compounds, quinone compounds, fullerene and its derivatives, metal oxides, silicon oxide, strontium titanate, calcium titanate, lithium fluoride, and calcium fluoride, but is not limited to these. The metal element in the metal oxide used in the electron transport material is at least one of Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, and Cr.
[0056] The thickness of the electron transport layer is, for example, 20 to 80 nm, and optionally 30 to 60 nm.
[0057] Examples of hole transport materials used in the hole transport layer include, but are not limited to, at least one of 2,2',7,7'-tetrakis(N,N-methoxyanilino)-9,9'-spirobifluorene, methoxytriphenylamine-fluoroformamidine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene), polystyrenesulfonic acid, poly3-hexylthiophene, triptycene-based triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobifluorene, polythiophene, a phosphate group monomer, a carbazolyl group monomer, a sulfonic acid group monomer, a triphenylamine group monomer, an aromatic group monomer, a metal oxide, and cuprous thiocyanate. The metal element in the metal oxide selected for the hole transport material includes at least one of Ni, Mo, and Cu.
[0058] The thickness of the hole transport layer is, for example, 100 to 200 nm, and optionally 130 to 170 nm.
[0059] The electrode layer 150 is made of an organic, inorganic, or organic-inorganic mixed conductive material, and the conductive material is at least one of an organic conductive material and an inorganic conductive material. The organic conductive material is, for example, a conductive polymer, and the conductive polymer includes, but is not limited to, at least one of polyethylenedioxythiophene (PEDOT), polythiophene, polyacetylene, etc. The inorganic conductive material includes, but is not limited to, at least one of a transparent conductive oxide, a metal, a carbon derivative, etc. Specific examples of the inorganic conductive material include Ag, Cu, C, Au, Al, ITO, AZO, BZO, IZO, etc.
[0060] According to some embodiments of the present application, the light conversion material includes an up-conversion material and a down-conversion material.
[0061] That is, the broad absorption spectrum perovskite layer 130 simultaneously contains the up-conversion material and the down-conversion material, and at least a portion of each of them is distributed in the gaps between the perovskite crystal grains of the three-dimensional perovskite.
[0062] The upconversion material is used to absorb photons in the long wavelength band (low energy) and convert them into the visible wavelength band that can be effectively absorbed by the three-dimensional perovskite, and the downconversion material is used to absorb photons in the short wavelength band (high energy) and convert them into the visible wavelength band that can be effectively absorbed by the three-dimensional perovskite, thereby simultaneously widening the absorption spectrum of the perovskite to include the infrared and ultraviolet wavelength bands, which is beneficial to improving the utilization rate of the solar spectrum and improving the energy conversion efficiency of the perovskite cell 100.
[0063] According to some embodiments of the present application, the mass ratio of the up-conversion material to the down-conversion material is 1:6 to 6:1.
[0064] Controlling the upconversion material and downconversion material to have an appropriate mass ratio is advantageous for improving the utilization rate of the solar spectrum and increasing the energy conversion efficiency.
[0065] Illustratively, the mass ratio of the upconversion material to the downconversion material is any value or between any two of the following values: 1:5, 1:4, 1:3, 1:2, 1:1, 2:1, 3:1, 4:1, 5:1.
[0066] According to some embodiments of the present application, the mass percent content of the upconversion material relative to the mass of the broad absorption spectrum perovskite layer 130 is 6% or less.
[0067] That is, the doping amount of the upconversion material in the broad absorption spectrum perovskite layer 130 is ≦6 wt %.
[0068] By rationally controlling the mass percent content of the down-conversion material in the broad absorption spectrum perovskite layer 130, it is advantageous to improve the stability and energy conversion efficiency of the broad absorption spectrum perovskite layer 130.
[0069] Illustratively, relative to the mass of the broad absorption spectrum perovskite layer 130, the mass percent content of the upconversion material is any value of 6%, 5%, 4%, 3%, 2%, 1%, 0.5%, or between any two values.
[0070] Optionally, relative to the mass of the broad absorption spectrum perovskite layer 130, the mass percent content of the upconversion material is 1-6%.
[0071] According to some embodiments of the present application, the mass percent content of the down-conversion material relative to the mass of the broad absorption spectrum perovskite layer 130 is 6% or less.
[0072] That is, the doping amount of the down-conversion material in the broad absorption spectrum perovskite layer 130 is ≦6 wt %.
[0073] By rationally controlling the doping amount of the down-conversion material in the broad absorption spectrum perovskite layer 130, it is advantageous to improve the energy conversion efficiency of the broad absorption spectrum perovskite layer 130.
[0074] Illustratively, relative to the mass of the broad absorption spectrum perovskite layer 130, the mass percent content of the down-conversion material is any value of 6%, 5%, 4%, 3%, 2%, 1%, 0.5%, or between any two values.
[0075] Optionally, relative to the mass of the broad absorption spectrum perovskite layer 130, the mass percent content of the down-conversion material is 1-6%.
[0076] According to some embodiments of the present application, the upconversion material can convert light having a wavelength longer than 800 nm to light having a wavelength shorter than 800 nm.
[0077] That is, the upconversion material converts light with a wavelength longer than 800 nm into light with a wavelength shorter than 800 nm for absorption by the three-dimensional perovskite, improving the utilization efficiency of sunlight and preventing some light with a wavelength longer than 800 nm from being directly absorbed by the three-dimensional perovskite and affecting the stability of the three-dimensional perovskite.
[0078] According to some embodiments of the present application, the components of the upconversion material include at least one of NaLuF4, NaGdF4, NaYbF4, NaYGd, NaYLu, NaYNd, NaGd(WO4)2, LiErF, BaYF5, BaLuF5, BaGdF5, BaYb2F, CaS, LiLa(MoO4)2, Gd2O3, ZrYO, YAIO, CaWO4, 2,4,5,6-tetrakis(9H-carbazol-9-yl)isophthalonitrile, thioxanthone, triphenylamine, and rare earth dopants and derivatives of each of the above components.
[0079] Each of the above upconversion materials can convert sunlight into light whose wavelength is absorbed by the three-dimensional perovskite, thereby improving the utilization efficiency of sunlight. They can also be installed independently of the three-dimensional perovskite and distributed in the gaps between the crystal grains of the perovskite.
[0080] Optionally, the rare earth element comprises at least one of Yb, Er, Tm, Eu, Sm, Bi and Ho.
[0081] According to some embodiments of the present application, the down-conversion material can convert light having a wavelength shorter than 400 nm into visible light having a wavelength longer than 400 nm.
[0082] In other words, the down-conversion material converts light with a wavelength shorter than 400 nm into visible light with a wavelength longer than 400 nm and then absorbs it into the three-dimensional perovskite, not only improving the utilization efficiency of sunlight but also avoiding the damage that would occur if light with a wavelength shorter than 400 nm were directly absorbed by the three-dimensional perovskite.
[0083] According to some embodiments of the present application, the down-conversion material includes at least one of a fluorescent material, a phosphorescent material, and a thermally activated delayed fluorescent material.
[0084] Fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescent materials all undergo photoconversion under the excitation of excitation light, and emit light with a wavelength longer than that of the excitation light.
[0085] Optionally, the fluorescent material components include at least one of riboflavin, phycoerythrin, metal complexes, polyfluorene-based compounds, coumarin-based compounds, naphthalimide-based compounds, triacene or higher acene-based compounds, rhodamine-based compounds, fluorescein-based compounds, fluoroboron dipyrrole-based compounds, resorufin-based compounds, pyrazoline-based compounds, triphenylamine-based compounds, carbazole-based compounds, green fluorescent protein, diamine-based fluorescent compounds, and perovskite luminescent nanomaterials, which are not particularly limited and are commonly used fluorescent materials in this field.
[0086] The metal complex may be at least one of tris(2-phenylpyridine)iridium, tris(dibenzoylmethane)mono(1,10-phenanthroline)europium, tris(2-phenylpyrimidine)iridium, and the like.
[0087] Polyfluorene compounds refer to fluorescent polyfluorenes and their derivatives, including, but not limited to, poly(9,9-dialkylfluorene), copolymers of bishexylfluorene and anthracene, branched biphenyls, tetraalkyl-substituted indenofluorene polymers, aromatic-substituted indenofluorene polymers, alternating polyfluorene bithiophene copolymers, and binary and ternary random copolymers of fluorene and thiophene, vinyldioxythiophene, 4,7-dithiophene-2,1,3-benzothiadiazole, and 4,7-dithiophene-2,1,3-benzoselenium diazole.
[0088] The coumarin-based compounds refer to coumarin and its derivatives, including, but not limited to, at least one of coumarin 307, coumarin 6, coumarin 153, coumarin 343, coumarin 152, coumarin 153, coumarin 7, coumarin 334, coumarin 314, coumarin 102, 7-ethoxycoumarin, 7-diethylamino-3-(2-benzimidazole)coumarin, 7-hydroxy-4-trifluoromethylcoumarin, and 7-diethylamino-4-methylcoumarin.
[0089] Naphthalimide-based compounds refer to compounds having a naphthalimide fluorescent group. Naphthalimide-based compounds include, but are not limited to, 4-amino-1,8-naphthalimide. Triacene or higher acene-based compounds refer to triacene or higher acene and their derivatives. Triacene or higher acene-based compounds include, but are not limited to, at least one of anthracene, hexabenzobenzene, perylene, benzanthracene, etc.
[0090] The rhodamine-based compounds refer to rhodamine and its derivatives, including, but not limited to, at least one of tetraethylrhodamine, tetramethylisothiocyanate rhodamine, rhodamine 6G (Acros), rhodamine 123, rhodamine B, and rhodamine 110.
[0091] Fluorescein compounds include, but are not limited to, at least one of fluorescein sodium, fluorescein yellow, fluorescein diacetate, 5-aminofluorescein, 2′,7′-dichlorofluorescein, fluorescein diacetate, tetraiodofluorescein, 6-carboxyfluorescein, 4′,5′-dibromofluorescein, fluorescein isothiocyanate, and the like.
[0092] The fluoroboron dipyrrole compound refers to fluoroboron dipyrrole and its derivatives.
[0093] The resorufin compound refers to resorufin and its derivatives, including, but not limited to, at least one of hydrogenated resorufin and resorufin α-D-glucopyranoside.
[0094] The pyrazoline compound refers to a fluorescent material containing a pyrazoline group, including, but not limited to, at least one of 5-diphenyl-3-(4-chloro)phenyl-2-pyrazoline, cyclic polypyrazoline formamide, and the like.
[0095] Triphenylamine compounds refer to triphenylamine and its derivatives, including, but not limited to, 4'-(diphenylamine)-(1,1'-biphenyl)4-formaldehyde.
[0096] The carbazole-based compound refers to a fluorescent material containing a carbazole group, including, but not limited to, at least one of 4,4'-N,N'-dicarbazole biphenyl, 4,4',4"-tris(carbazole-9-yl)triphenylamine, and 9,9'-(1,3-phenyl)di-9H-carbazole.
[0097] The diamine-based fluorescent compound includes, but is not limited to, at least one of N,N'-bis-(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine or N,N'-bis(3-naphthyl)-N,N'-diphenyl-[1,1'-diphenyl]-4,4'-diamine, etc.
[0098] Thermally activated delayed fluorescence (TADF) materials are designed with a small difference between the singlet and triplet energy levels, allowing triplet excitons to return to the singlet state through reverse intersystem crossing and then radiatively transition to the ground state, resulting in light emission. This allows for simultaneous utilization of singlet and triplet excitons, potentially achieving quantum efficiencies of 100%. Thermally activated delayed fluorescence materials include, but are not limited to, at least one of the blue-emitting molecule P-Ac95-TRZ05, the red-emitting molecule CRA-TXO-TPA(100), and the green-emitting molecule CRA-PXZ-Trz.
[0099] Optionally, the phosphorescent material includes a substrate and an activator, the substrate including at least one of sulfides, oxides, selenides, fluorides, phosphates, silicates, and tungstates of Group II metals, and the activator including a heavy metal.
[0100] Optionally, in the phosphorescent material, the heavy metal comprises at least one of Au, Cu, Mn, Ag, Bi, Pb, and rare earth metals.
[0101] The fluorescent and phosphorescent materials mentioned above can convert sunlight into light whose wavelength can be absorbed by the three-dimensional perovskite, thereby improving the utilization efficiency of sunlight. They can also be installed independently of the three-dimensional perovskite and distributed in the gaps between the crystal grains of the perovskite.
[0102] According to some embodiments of the present application, at least a portion of the light conversion material is in particulate form and retains the particulate form while being dispersed within the three-dimensional perovskite.
[0103] The phrase "at least a portion of the light conversion material is in a particulate form and maintains its particulate form while dispersed within the three-dimensional perovskite" means that the shape of the light conversion material does not change during the process of forming the broad absorption spectrum perovskite layer 130. For example, when the broad absorption spectrum perovskite layer 130 is formed by applying a paste containing the three-dimensional perovskite and the light conversion material, the light conversion material does not dissolve in the paste.
[0104] Optionally, the light conversion material has a D90 particle size of 40 nm or less.
[0105] As can be appreciated, the light conversion material referred to above refers to a light conversion material that is in particulate form and retains its particulate form and is dispersed within the three-dimensional perovskite.
[0106] The D90 particle size refers to the particle size distribution parameter of the light-converting material determined by particle size distribution measurement. For example, Dv90 is determined by a particle size analyzer-laser diffraction method, specifically, it can be measured using a laser diffraction scattering particle size analyzer, referring to standard GB / T 19077-2016. The above setting is advantageous for the light-converting material to be distributed in the gaps between the perovskite crystal grains of the three-dimensional perovskite, reducing the adverse effect of particles on the three-dimensional perovskite.
[0107] Illustratively, the particle size is any value or between any two of the following values: 40 nm, 30 nm, 28 nm, 26 nm, 25 nm, 20 nm, 18 nm, 15 nm, 10 nm, 5 nm, etc.
[0108] Optionally, the light conversion material has a D90 particle size of 10 to 40 nm.
[0109] Optionally, the light conversion material has a D90 particle size of 10 to 30 nm.
[0110] According to some embodiments of the present application, the broad absorption spectrum perovskite layer 130 has a thickness of 400-600 nm.
[0111] As can be understood, the thickness of the broad absorption spectrum perovskite layer 130 refers to the size of the broad absorption spectrum perovskite layer 130 in the thickness direction of the perovskite cell 100, and the thickness direction of the perovskite cell 100 refers to the direction in which each functional layer is stacked and installed in sequence.
[0112] Controlling the broad absorption spectrum perovskite layer 130 to have a reasonable thickness is advantageous for improving energy conversion efficiency.
[0113] Illustratively, the thickness of the broad absorption spectrum perovskite layer 130 is any value or between any two of the following values: 400 nm, 250 nm, 500 nm, 550 nm, 600 nm, etc.
[0114] According to some embodiments of the present application, the broad absorption spectrum perovskite layer 130 has an absorption spectrum of 300-1100 nm.
[0115] That is, the absorption spectrum of the broad absorption spectrum perovskite layer 130 is broadened to include the infrared and ultraviolet wavelength bands, improving the solar spectrum utilization rate and significantly improving the performance of the perovskite cell 100.
[0116] Referring to Figures 1 and 2, according to some embodiments of the present application, a perovskite battery 100 includes a transparent substrate layer 110, a first carrier transport layer 120, a broad absorption spectrum perovskite layer 130, a second carrier transport layer 140, and an electrode layer 150, wherein one of the first carrier transport layer 120 and the second carrier transport layer 140 is an electron transport layer and the other is a hole transport layer.
[0117] As shown in FIG. 1, when the first carrier transport layer 120 is an electron transport layer and the second carrier transport layer 140 is a hole transport layer, the perovskite battery 100 at this time has a forward structure.
[0118] As shown in FIG. 2, when the first carrier transport layer 120 is a hole transport layer and the second carrier transport layer 140 is an electron transport layer, the perovskite battery 100 then has an inverted structure.
[0119] By utilizing and configuring multiple functional layers (the functional layers being a transparent substrate layer 110, a first carrier transport layer 120, a broad absorption spectrum perovskite layer 130, a second carrier transport layer 140 and an electrode layer 150 arranged in that order), the perovskite battery 100 formed has a simple structure and is easy to fabricate, while retaining the inherent advantages of the perovskite battery 100.
[0120] Illustratively, based on the above embodiment, the manufacturing process of the perovskite battery 100 includes the following: Step 1: Etch, clean, and dry the transparent substrate layer 110 to prepare it for use. Step 2: Fabricate a first carrier transport layer 120 on the front side of the transparent substrate layer 110 to prepare it for use. Step 3: Fabricate a broad absorption spectrum perovskite layer 130 on the front side of the first carrier transport layer 120 to prepare it for use. Step 4: Fabricate a second carrier transport layer 140 on the front side of the broad absorption spectrum perovskite layer 130 to prepare it for use. Step 5: Fabricate an electrode layer 150 on the front side of the second carrier transport layer 140, and perform an edge rinse test.
[0121] It can be understood that the manufacturing method of each of the above layers includes, but is not limited to, any one of chemical bath deposition, electrochemical deposition, chemical vapor deposition, physical epitaxial growth, thermal evaporation co-evaporation, atomic layer deposition, magnetron sputtering, precursor coating, precursor slit coating, precursor knife coating, etc., and those skilled in the art can select them according to actual needs. In addition to the above mounting methods, a mechanical pressing method can also be used to form at least two interconnected functional layers at a time.
[0122] Alternatively, the manufacturing method for each layer may be, for example, thermal evaporation or precursor coating, which may be spin coating.
[0123] In addition, when a precursor coating method is used in the manufacturing process of the broad absorption spectrum perovskite layer 130, the conversion material and the three-dimensional perovskite are dispersed in the perovskite coating solution used for the broad absorption spectrum perovskite layer 130.
[0124] The method for fabricating the above-mentioned perovskite battery 100 by a combination of precursor coating and vacuum deposition includes:
[0125] The electron transport layer paste is spin-coated at a rotation speed of 4000 rpm to 6500 rpm, and then dried on a thermostatic hot plate at, for example, 100 to 200° C. to obtain the electron transport layer.
[0126] The perovskite coating liquid is spin-coated at a rotation speed of 3000 rpm to 4500 rpm, then transferred to a thermostatic hotplate, dried at 80 to 120° C., and cooled to room temperature to form a broad absorption spectrum perovskite layer 130.
[0127] The hole transport layer paste is spin-coated at a rotation speed of 3000 rpm to 4000 rpm and dried to obtain the hole transport layer.
[0128] 5 x 10 using a vacuum deposition machine -4 The electrode layer 150 is deposited under vacuum conditions of 1000 Pa.
[0129] Referring to FIGS. 1 and 2, in an exemplary embodiment of the present application, a perovskite cell 100 includes a transparent substrate layer 110, a first carrier transport layer 120, a broad absorption spectrum perovskite layer 130, a second carrier transport layer 140, and an electrode layer 150, which are stacked in this order. One of the first carrier transport layer 120 and the second carrier transport layer 140 is an electron transport layer, and the other is a hole transport layer. The broad absorption spectrum perovskite layer 130 includes a three-dimensional perovskite and a light conversion material, with at least a portion of the light conversion material distributed in the interstices between the crystal grains of the three-dimensional perovskite. The light conversion material is a mixture of an upconversion material and a downconversion material, where, relative to the mass of the broad absorption spectrum perovskite layer, the mass percentage content of the upconversion material is 6% or less, the mass percentage content of the downconversion material is 6% or less, and the mass ratio of the upconversion material to the downconversion material is 1:6 to 6:1.
[0130] Referring to FIG. 3, according to some embodiments of the present application, the present application further provides a photovoltaic assembly 1000 including the perovskite cell 100 according to any of the above aspects.
[0131] The photovoltaic assembly 1000 is a solar cell assembly, i.e., an entire assembly including a plurality of perovskite cells 100. The photovoltaic assembly 1000 includes a plurality of cell strings 1100, each of which includes a plurality of perovskite cells 100 connected in series via connectors such as string ribbons.
[0132] In addition to the battery string 1100, the photovoltaic assembly 1000 further includes a front glass 1200, a front sealing film 1300, a rear sealing film 1400, a rear glass 1500, etc. For example, the photovoltaic assembly 1000 includes the front glass 1200, the front sealing film 1300, the battery string 1100, the rear sealing film 1400, and the rear glass 1500, which are stacked in order along the thickness direction.
[0133] According to some embodiments, the present application further provides a photovoltaic power generation system including a plurality of electrically connected photovoltaic assemblies.
[0134] A plurality is an integer number of two or more.
[0135] A photovoltaic power generation system is a power generation system that directly converts solar radiation energy into electrical energy using the photovoltaic effect, and can be divided into stand-alone PV systems and grid-connected PV systems. Stand-alone PV systems consist of a photovoltaic array made up of a photovoltaic assembly, a battery pack, a charge controller, a power electronic converter (inverter), and a load, while grid-connected PV systems consist of a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and a system monitoring unit.
[0136] According to some embodiments of the present application, the present application further provides a power consuming device including a photovoltaic assembly according to the above aspects used to supply electrical energy.
[0137] The power consuming device may take various forms, such as an electric vehicle, a ship, a spacecraft, a solar water heater, solar energy, etc.
[0138] The power supply method of the power consuming device may be a single power supply from the photovoltaic assembly, or a combined power supply from the photovoltaic assembly and the energy storage battery, i.e., the photovoltaic assembly and the energy storage battery may be simultaneously installed in the power consuming device. The energy storage battery is not limited to primary batteries and secondary batteries, such as, but not limited to, lithium ion secondary batteries, sodium ion secondary batteries, etc.
[0139] The present invention will be further described below with reference to some specific examples.
[0140] Example 1 (1) The surface of a 2.0 cm x 2.0 cm FTO conductive glass is washed twice with acetone and isopropyl alcohol, then immersed in deionized water and ultrasonically treated for 10 minutes. It is then dried in a fan-powered drying box and placed in a glove box (N2 atmosphere) to form a transparent substrate layer.
[0141] (2) After 3 wt % SnO2 nanocolloid solution is spin-coated on the front surface of the transparent substrate layer 110 at 4000 rpm to 6500 rpm, it is heated on a hot plate at 150°C for 15 minutes to form an electron transport layer with a thickness of 50 nm, and is ready for use.
[0142] (3) A DMF solution containing 5 mg / mL of NaYGd:Er nanocolloids, 5 wt% of tetraethylrhodamine, and 1.5 mol / L of FAPbI3 was spin-coated on the front surface of the obtained electron transport layer at a speed of 3000 rpm to 4500 rpm, then transferred to a hotplate and heated at 100 °C for 30 min, followed by cooling to room temperature to form a broad-absorption-spectrum perovskite layer with a thickness of 500 nm.
[0143] (4) Spin-coat a chlorobenzene solution of Spiro-OMeTAD with a concentration of 73 mg / mL on the front surface of the broad absorption spectrum perovskite layer at a speed of 3000 rpm to 4000 rpm and dry it to obtain a hole transport layer with a thickness of 150 nm.
[0144] (5) The obtained sheet is placed in a deposition machine and 5 × 10 -4 A metal electrode, Ag, is evaporated onto the hole transport layer under vacuum conditions of 0.1 Pa to form an electrode layer. The evaporation rate is 0.1 Å / s, and the thickness of the electrode layer is 80 nm. A perovskite cell is obtained, and then an edge rinse test is performed.
[0145] <Examples 2 to 19 and Comparative Example 1> The only difference between Examples 2 to 19 and Comparative Example 1 and Example 1 is the parameters shown in Tables 1 and 2.
[0146] The energy conversion efficiency of the perovskite cells of each example and comparative example was measured under the following test conditions.
[0147] Under atmospheric conditions, the AM1.5G standard light source was used as the sunlight simulation light source, and a 4-channel digital source meter (Keithley 2440) was used to measure the voltammetry characteristic curve of the battery under light source irradiation to obtain the open circuit voltage Voc, short circuit current density Jsc, and fill factor FF (Fill Factor) of the battery, from which the energy conversion efficiency Eff (Efficiency) of the battery was calculated.
[0148] The energy conversion efficiency is calculated as follows: Eff = Pout / Popt = Voc×Jsc×(Vmpp×Jmpp) / (Voc×Jsc) = Voc × Jsc × FF, where Pout, Popt, Vmpp, and Jmpp are the battery operating output power, the incident light output, the battery maximum power operating voltage, and the maximum power operating current, respectively.
[0149] The only difference between Comparative Example 2 and Example 18 is that the broad spectrum absorption perovskite layer is fabricated as a composite layer of one down-conversion material layer and one perovskite layer, the down-conversion material layer is located between the electron transport layer and the perovskite layer, and the mass percentage content of the down-conversion material in the composite layer is 2.5% relative to the mass of the composite layer composed of the down-conversion material layer and the perovskite layer.
[0150] [Table 1]
[0151] [Table 2]
[0152] In Tables 1 and 2, the D90 particle size refers to the D90 particle size of the corresponding specific upconversion and / or downconversion material when the upconversion and / or downconversion material is in a particulate form and maintains its particulate shape while dispersed within the three-dimensional perovskite, such as NaYGd:Er nanocolloid in Example 1. As can be seen from Comparative Example 1 and Examples 1 to 24, the broad absorption spectrum perovskite layer provided herein can effectively improve the energy conversion efficiency of perovskite batteries.
[0153] As can be seen from Example 2 and Comparative Example 2, when the total mass percent content of the conversion materials relative to the mass of the broad absorption spectrum perovskite layer is the same, the bulk phase doping method provided by the present application can effectively improve the energy conversion efficiency compared to the split layer method.
[0154] As can be seen from Examples 2 to 4, when only the upconversion material is doped, the doping amount has a significant effect on the energy conversion efficiency. The energy conversion efficiency of the perovskite battery is good when the total mass percent content of the upconversion material relative to the mass of the broad absorption spectrum perovskite layer is no more than 6%. As can be seen from Examples 1 and 5 to 8, the energy conversion efficiency of the perovskite battery can be further optimized when the total mass percent content of the upconversion material relative to the mass of the broad absorption spectrum perovskite layer is 1 to 6%.
[0155] As can be seen from Examples 1, 9 to 12, when the total mass percentage content of the down-conversion materials relative to the mass of the broad absorption spectrum perovskite layer is 6% or less, the energy conversion efficiency of the perovskite cell is good. Optionally, when the total mass percentage content of the down-conversion materials relative to the mass of the broad absorption spectrum perovskite layer is 1 to 6%, the energy conversion efficiency of the perovskite cell can be further optimized.
[0156] As can be seen from Examples 1, 13 and 14, the mass ratio of the up-conversion material to the down-conversion material in the above three examples is 1:1, but if the doping amount changes, the energy conversion efficiency will change.
[0157] Comparisons between Examples 1 and 15, 5 and 9, 6 and 10, 7 and 11, and 16 and 17 show that when the total doping amount of the conversion materials is the same, the mass ratio of the upconversion material to the downconversion material affects the energy conversion efficiency. When the mass ratio of the upconversion material to the downconversion material is within the range of 1:6 to 6:1, the perovskite battery has good energy conversion efficiency.
[0158] As can be seen from Examples 1 and 18 to 20, at least a portion of the light conversion material is dispersed in the three-dimensional perovskite in the form of particles, and the selection of particle size also affects the final energy conversion efficiency.
[0159] In summary, the perovskite cells, photovoltaic assemblies, photovoltaic power generation systems and power consumption devices provided herein can improve the technical problems of low utilization of the solar spectrum and low energy conversion efficiency of perovskite cells.
[0160] Finally, it should be noted that the above embodiments are merely for illustrating the technical solutions of the present application, and are not intended to limit the same. Although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments may still be modified, or some or all of the technical features therein may be equivalently substituted, and such modifications or substitutions do not cause the substance of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application, and all of them should be encompassed by the claims and the description of the present application. In particular, as long as there is no structural contradiction, the technical features mentioned in the embodiments may be combined in any manner. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions encompassed by the claims. [Explanation of symbols]
[0161] 1000-Photovoltaic Assembly, 1100-battery string, 1200-front glass, 1300-front sealing film, 1400-Rear sealing film, 1500-Rear glass, 100-Perovskite battery, 110—transparent substrate layer, 120—first carrier transport layer, 130—broad absorption spectrum perovskite layer, 140—second carrier transport layer, 150—electrode layer
Claims
1. 1. A perovskite battery comprising a broad absorption spectrum perovskite layer located between a transparent substrate layer and an electrode layer, The broad absorption spectrum perovskite layer comprises a three-dimensional perovskite and a light conversion material, at least a portion of the light conversion material is distributed in gaps between crystal grains of the three-dimensional perovskite, and the light conversion material comprises at least one of an up-conversion material and a down-conversion material.
2. 2. The perovskite cell of claim 1, wherein the light conversion material comprises an up-conversion material and a down-conversion material.
3. 3. The perovskite battery of claim 2, wherein the mass ratio of the up-conversion material to the down-conversion material is 1:6 to 6:
1.
4. 4. The perovskite cell according to claim 1, wherein, relative to the mass of the broad absorption spectrum perovskite layer, the mass percent content of the upconversion material is not more than 6%, and optionally is between 1 and 6%.
5. 4. The perovskite cell according to claim 1, wherein, relative to the mass of the broad absorption spectrum perovskite layer, the mass percent content of the down-conversion material is not more than 6%, and optionally is between 1 and 6%.
6. The perovskite cell according to any one of claims 1 to 5, wherein the upconversion material is capable of converting light having a wavelength longer than 800 nm into visible light having a wavelength shorter than 800 nm.
7. The component of the upconversion material is NaLuF 4 , NaGdF 4 , NaYbF 4 , NaYGd, NaYLu, NaYNd, NaGd (WO 4 ) 2 , LiErF, BaYF 5 , BaLuF 5 , BaGdF 5 ,BaYb 2 F, CaS, LiLa(MoO 4 ) 2 , Gd 2 O 3 , ZrYO, YAIO, CaWO 4 , 2,4,5,6-tetrakis(9H-carbazol-9-yl)isophthalonitrile, thioxanthone, triphenylamine, and rare earth element dopants and derivatives of each of the foregoing; 7. The perovskite battery according to any one of claims 1 to 6, wherein the rare earth elements optionally include at least one of Yb, Er, Tm, Eu, Sm, Bi and Ho.
8. The perovskite cell of any one of claims 1 to 7, wherein the down-conversion material is capable of converting light having a wavelength shorter than 400 nm into visible light having a wavelength longer than 400 nm.
9. the down-conversion material comprises at least one of a fluorescent material, a phosphorescent material, and a thermally activated delayed fluorescent material; Optionally, the fluorescent material component includes at least one of riboflavin, phycoerythrin, metal complexes, polyfluorene-based compounds, coumarin-based compounds, naphthalimide-based compounds, triacene or higher acene-based compounds, rhodamine-based compounds, fluorescein-based compounds, fluoroboron dipyrrole-based compounds, resorufin-based compounds, pyrazoline-based compounds, triphenylamine-based compounds, carbazole-based compounds, green fluorescent protein, diamine-based fluorescent compounds, and perovskite luminescent nanomaterials; Optionally, the phosphorescent material comprises a substrate and an activator, the substrate comprising at least one of sulfides, oxides, selenides, fluorides, phosphates, silicates, and tungstates of Group II metals, and the activator comprising a heavy metal; Optionally, in the phosphorescent material, the heavy metal includes at least one of Au, Cu, Mn, Ag, Bi, Pb, and a rare earth metal.
10. At least a portion of the light conversion material is in a particulate form and is dispersed within the three-dimensional perovskite while maintaining the particulate form; 10. The perovskite cell of claim 1, wherein the light conversion material has a D90 particle size of 40 nm or less, and optionally between 10 and 40 nm.
11. The perovskite cell according to any one of claims 1 to 10, wherein the broad absorption spectrum perovskite layer has a thickness of 400 to 600 nm.
12. The perovskite battery according to any one of claims 1 to 11, wherein the broad absorption spectrum perovskite layer has an absorption spectrum of 300 to 1100 nm.
13. The perovskite battery includes the transparent substrate layer, the first carrier transport layer, the broad absorption spectrum perovskite layer, the second carrier transport layer, and the electrode layer, which are stacked in this order; The perovskite battery according to any one of claims 1 to 12, wherein one of the first carrier transport layer and the second carrier transport layer is an electron transport layer, and the other layer is a hole transport layer.
14. A photovoltaic assembly comprising the perovskite cell of any one of claims 1 to 13.
15. A photovoltaic power generation system comprising a plurality of electrically connected photovoltaic assemblies according to claim 14.
16. 16. A power consuming device comprising a plurality of electrically connected photovoltaic assemblies according to claim 15.