Substrates, solar cells, solar power generation systems and power consumption equipment

Through-holes in the substrate's film layer alleviate stress during bending, enhancing resistance and reducing damage, thus improving the substrate's durability.

JP2026508762APending Publication Date: 2026-03-12CONTEMPORARY AMPEREX FUTURE ENERGY RES INST (SHANGHAI) LTD +1
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-02-19
Publication Date
2026-03-12

AI Technical Summary

Technical Problem

Solar cell substrates prone to bending marks or breakage due to repeated bending, affecting their performance.

Method used

Incorporating through-holes in the first film layer of the substrate to relieve stress during bending, enhancing bending resistance.

Benefits of technology

Improves the substrate's bending resistance, reducing the risk of marks and fractures, thereby extending its service life.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure 2026508762000001_ABST
    Figure 2026508762000001_ABST
Patent Text Reader

Abstract

The substrate (1110), solar cell (1100), solar power generation system, and power consuming device include a substrate (1110) comprising a first film layer (100), which has at least one through hole (110) formed on it. When the substrate (1110) is bent, the first film layer (100) is bent and deformed accordingly. However, because the through hole (110) is formed on the first film layer (100), the presence of the through hole (110) relieves the stress experienced by the first film layer (100) on the periphery thereof due to bending, thereby improving the bending resistance of the first film layer (100). This also improves the bending resistance of the substrate (1110), thereby reducing the risk of the substrate (1110) developing bending marks, fractures, or breakage during repeated bending.
Need to check novelty before this filing date? Find Prior Art

Description

[Technical Field]

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application incorporates by reference Chinese Patent Application No. 202310589746.X, entitled "Substrate, Solar Cell, Photovoltaic Power Generation System and Power Consumption Device," filed on May 24, 2023, which is incorporated herein by reference in its entirety.

[0002] The present application relates to the solar cell technical field, and in particular provides a substrate, a solar cell, a solar power generation system, and a power consuming device. [Background technology]

[0003] In the related art, solar cell substrates generally use plastic substrates, and during the repeated bending process of flexible devices, obvious bending marks may appear on the substrate, or there is a risk of breakage or fracture, all of which will have a negative impact on the performance of the substrate. Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the embodiments of the present application is to provide a substrate, a solar cell, a solar power generation system, and a power consuming device that solves the problem in related art that substrates are prone to bending marks or breakage and fracture due to repeated bending. [Means for solving the problem]

[0005] The technical solutions adopted in the embodiments of this application are as follows:

[0006] According to a first aspect, an embodiment of the present application provides a substrate, the substrate including a first film layer, with at least one through-hole drilled on the first film layer.

[0007] Beneficial effects of the examples of the present application: When the substrate according to the examples of the present application is bent, the first film layer is bent and deformed accordingly. However, because through holes are drilled on the first film layer, the presence of the through holes relieves the stress that the first film layer on the surrounding side receives from bending, thereby achieving the purpose of improving the bending resistance of the first film layer and further achieving the purpose of improving the bending resistance of the substrate, thereby reducing the risk of bending marks, fractures, or breakage of the substrate during repeated bending.

[0008] In some embodiments, the first film layer has a bending axis that passes through at least some of the through-holes.

[0009] By adopting the above technical solution, when the substrate is bent, the first film layer is bent and deformed around the bending axis. It can be understood that the first film layer is most bent and deformed at the bending axis, and since the bending axis passes through at least some of the through holes, the through holes can relieve the stress experienced by the first film layer under bending conditions, and have a better effect of improving bending resistance.

[0010] In some embodiments, the bending axis passes through each of the through holes.

[0011] By adopting the above technical solution, the through holes are arranged in sequence along the bending axis, and when the board is bent, the first film layer is bent and deformed around the bending axis. At this time, the through holes can relieve the stress experienced by the first film layer, thereby achieving a better effect of improving bending resistance.

[0012] In some embodiments, the at least one through hole is symmetrically positioned about the bending axis.

[0013] By adopting the above technical solution, the through holes are arranged in sequence along the extension direction of the bending axis, and at least one through hole is installed symmetrically with respect to the bending axis. When the substrate is bent, the first film layer is bent and deformed around the bending axis. At this time, the through holes can simultaneously improve the bending resistance of the first film layer portions on both sides of the bending axis and improve the symmetry of the first film layer portions on both sides of the bending axis.

[0014] In some embodiments, the width of the through-holes tends to decrease along a direction away from the bending axis.

[0015] By adopting the above technical solution, when the substrate is bent, the first side and the second side of the first film layer are each bent and deformed around the bending axis. It can be understood that the degree of bending of the first side and the second side becomes smaller the farther from the bending axis, so the width of the through hole is set to tend to decrease in the direction away from the bending axis to adapt to changes in the degree of bending of the first film layer.

[0016] In some embodiments, the first film layer has a bending axis, and at least one side of the first film layer located at the bending axis has through holes drilled therein.

[0017] By adopting the above technical solution, when the substrate is bent, the two opposing sides of the bending axis of the first film layer are each bent and deformed around the bending axis, and the through holes distributed on at least one side located on the bending axis of the first film layer can limit the radius of curvature of the first film layer on this side when it is bent, thereby reducing the risk of damage caused by excessive bending.

[0018] In some embodiments, the through-holes are laid out on the first film layer in sequence along a direction perpendicular to the bending axis.

[0019] By adopting the above technical solution, when the substrate is bent, the first film layer is bent and deformed around the bending axis, and the through holes are arranged in order along a direction perpendicular to the bending axis, i.e., the through holes are arranged along the bending direction of the first film layer, and the through holes can relieve the stress that the first film layer receives on the peripheral side of the bending axis, thereby achieving the effect of improving bending resistance.

[0020] In some embodiments, there is a pitch between adjacent through holes, with the pitch tending to increase in the direction away from the bending axis.

[0021] By adopting the above technical solution, when the substrate is bent, the first film layer is bent and deformed around the bending axis. It can be understood that the degree of bending of the first film layer becomes smaller the further from the bending axis the first film layer is. Therefore, the pitch between adjacent through holes tends to increase in the direction away from the bending axis, i.e., the through holes tend to become sparser in the direction away from the bending axis. This adapts to the change in the degree of bending deformation of the first film layer, thereby reducing the number of through holes and the puncture processing process of the first film layer.

[0022] In some embodiments, the first film layer has through-holes on both opposing sides of the bending axis, and the at least two through-holes are symmetrically distributed about the bending axis.

[0023] By adopting the above technical solution, when the substrate is bent, the opposite portions of the first film layer located on the bending axis will bend and deform around the bending axis, and the symmetrically distributed through holes can simultaneously improve the bending resistance of the first film layer on both sides opposite the bending axis and improve the symmetry of the opposite sides of the bending axis of the first film layer.

[0024] In some embodiments, the through-hole is a strip-shaped through-hole, and the longitudinal direction of the strip-shaped through-hole is parallel to the extension direction of the bending axis.

[0025] By adopting the above technical solution, the through holes are set as strip-shaped through holes, and the longitudinal direction of the strip-shaped through holes is parallel to the extension direction of the bending axis, i.e., the through holes are distributed parallel to the bending axis. When the substrate is bent, the first film layer is bent and deformed around the bending axis, and the strip-shaped through holes limit the radius of curvature of the bending position of the part between two adjacent strip-shaped through holes of the first film layer, thereby reducing the risk of damage to the first film layer due to bending.

[0026] In some embodiments, the substrate further comprises a second film layer, the second film layer being in close contact with the first film layer.

[0027] By adopting the above technical solution, the first film layer is in close contact with the second film layer, and by drilling through holes on the second film layer, the bending resistance performance is improved, and by using the first film layer as a base structure to support the solar cell device assembly, the impact of drilling through holes on the assembly of other devices can be reduced.

[0028] In some embodiments, the first film layer is a plastic film layer and / or the second film layer is a plastic film layer.

[0029] By adopting the above technical solution, a plastic film layer is selected as the first film layer and / or a plastic film layer is selected as the second film layer, so that the first film layer and the second film layer have excellent support and light transmittance.

[0030] In some embodiments, the substrate further includes a central layer, the central layer being elastic and having a first end surface and an opposing second end surface, the first film layer being attached to the first end surface and the second film layer being attached to the second end surface.

[0031] By adopting the above technical solution, when the substrate is bent, the first film layer, the central layer, and the second film layer can bend synchronously, and the first film layer and the second film layer are respectively subjected to tensile stress and compressive stress, and the elastic central layer offsets the tensile stress and compressive stress experienced by the first film layer and the second film layer, thereby reducing the stress experienced by the first film layer and the second film layer, and achieving the purpose of improving the bending resistance of the substrate.

[0032] In some embodiments, the central layer has through holes drilled therethrough, the through holes communicating with the through holes.

[0033] By adopting the above technical solution, through holes are drilled on the central layer, thereby reducing the area of ​​the central layer exposed to the first film layer through the through holes, thereby reducing the impact of dust falling onto the central layer through the through holes and affecting the light transmittance of the central layer.

[0034] In some embodiments, the through-hole is directly opposite the through-hole.

[0035] By adopting the above technical proposal, a through hole directly opposite the through hole is drilled on the central layer, thereby avoiding the central layer from being exposed to the first film layer through the through hole, and reducing the impact of dust falling onto the central layer through the through hole and affecting the light transmittance of the central layer.

[0036] In some embodiments, the center layer is a transparent adhesive layer.

[0037] By adopting the above technical solution, the transparent adhesive layer is a polymeric viscoelastic layer, and under bending conditions, the transparent adhesive layer undergoes a relatively large degree of deformation, which offsets the tensile stress and compressive stress experienced by the first film layer and the second film layer, and allows the deformation of the transparent adhesive layer to be restored under non-bending conditions.

[0038] According to a second aspect, an embodiment of the present application further provides a solar cell, the solar cell comprising the substrate described above.

[0039] Beneficial effects of the embodiments of the present application: The solar cell according to the embodiments of the present application includes the above substrate, and based on the excellent bending resistance performance of the above substrate, the substrate of the solar cell can withstand more bending times, thereby improving the stability of the solar cell.

[0040] According to a third aspect, an embodiment of the present application further provides a solar power generation system, the solar power generation system including the solar cell described above.

[0041] Beneficial effects of the embodiments of the present application: The solar power generation system according to the embodiments of the present application includes the solar cell described above, and based on the excellent stability of the solar cell described above, the solar power generation system also has excellent stability.

[0042] According to a fourth aspect, an embodiment of the present application further provides a power consuming device, the power consuming device including the solar cell described above.

[0043] Beneficial effects of the embodiments of the present application: The power consuming device according to the embodiments of the present application includes the solar cell described above, and based on the excellent stability of the solar cell described above, the power consuming device also has excellent stability. [Brief explanation of the drawings]

[0044] In order to more clearly explain the technical solutions in the embodiments of the present application, the following briefly introduces drawings that may be used in the embodiments or related technologies. It is obvious that the drawings in the following description are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without any creative efforts. [Figure 1] 1 is a structural schematic diagram of a solar cell assembly in a solar power generation system according to an embodiment of the present application; [Figure 2]1 is a schematic diagram of a layered structure of a perovskite solar cell according to an embodiment of the present application. [Figure 3] 1 is a structural schematic diagram of a first film layer according to an embodiment of the present application. FIG. [Figure 4] FIG. 2 is a structural schematic diagram of a second first film layer according to an embodiment of the present application. [Figure 5] FIG. 10 is a structural schematic diagram of a third first film layer according to an embodiment of the present application. [Figure 6] FIG. 10 is a structural schematic diagram of a fourth first film layer according to an embodiment of the present application. [Figure 7] 1 is a schematic diagram of a layered structure of a substrate according to an embodiment of the present application; DETAILED DESCRIPTION OF THE INVENTION

[0045] The following describes in detail the embodiments of the present application, examples of which are shown in the drawings, where the same or similar numbers always represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the drawings are illustrative and are intended to interpret the present application, but should not be understood as limitations on the present application.

[0046] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art of this application, and the terms used herein are only for describing specific examples and are not intended to limit this application. The terms "comprises" and "having" and any variations thereof in the specification and claims of this application and the description of the drawings above are intended to cover a non-exclusive "comprise."

[0047] In describing the embodiments of the present application, the orientations or positional relationships indicated by terms such as "length," "width," "thickness," "inside," "outside," "upper," "lower," "left," and "right" are orientations or positional relationships shown based on the drawings, and are intended merely for the convenience and simplification of the description of the present application. They do not indicate or imply that the referred-to devices or elements must have a specific orientation or be configured and operated in a specific orientation, and therefore should not be understood as limitations on the present application.

[0048] The terms "first," "second," etc. are used only to distinguish between descriptions and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. For example, the terms "first guide" and "second guide" are used only to distinguish between different guides and do not limit their order; a first guide may be called a second guide, and a second guide may be called a first guide, without departing from the scope of the various embodiments described. Furthermore, the terms "first," "second," etc. do not limit the indicated features to necessarily be different.

[0049] In the description of the embodiments of the present application, unless otherwise clearly defined or limited, the terms "connection," "connection," etc. should be understood in a broad sense, and may refer to, for example, a fixed connection, a detachable connection, or an integral connection, a mechanical connection, an electrical connection, a direct connection, an indirect connection via an intermediate medium, internal communication between two elements, or an interactive relationship between two elements. Those skilled in the art can understand the specific meaning of the above terms in the present application according to the specific circumstances. The meaning of "plurality" is at least two, i.e., two or more.

[0050] In this application, "and / or" is merely a relation that describes related objects and indicates that three relations may exist, for example, A and / or B may represent three cases: A alone, a combination of A and B, and B alone. In addition, the character " / " in this specification generally indicates that the related objects before and after are in an "or" relationship.

[0051] It should be noted that in this application, terms such as "in some embodiments," "exemplary," and "for example" are used to describe examples, illustrations, or explanations. In this application, any embodiment or design described with "in some embodiments," "exemplary," or "for example" should not be construed as being more preferred or advantageous than other embodiments or designs. Rather, the use of terms such as "in some embodiments," "exemplary," and "for example" is intended to present related concepts in a concrete manner, and means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of such terms in various locations in the specification does not necessarily refer to the same embodiment, nor are they mutually exclusive independent or alternative embodiments. Those skilled in the art can explicitly and implicitly understand that the embodiments described herein can be combined with other embodiments.

[0052] In order to make the objectives, technical solutions and advantages of the present application more clearly understandable, the present application will be further described in detail in conjunction with the following figures and examples.

[0053] Solar cells are photoelectric semiconductor sheets that generate electricity directly from sunlight, also known as "solar energy chips" or "photovoltaic cells." They can instantly output voltage and generate current when a circuit is connected, provided that a certain level of illumination is met. With the rapid development of new energy sources, solar cells have been widely applied in fields such as military, space, industry, commerce, agriculture, and communications. Perovskite solar cells have become a focus of research into next-generation solar cells due to their advantages, including high photoelectric conversion efficiency, simple fabrication process, and low production and material costs.

[0054] In the related art, a solar cell includes a cell body and a substrate, and the substrate has flexibility, so that the substrate can be bent to form a curved surface and adapt to a curved environment, thereby expanding the range of applications of the solar cell. However, during the repeated bending process of the solar cell substrate, obvious bending marks may appear on the substrate, and in severe cases, the substrate may be broken or fractured, which may damage the solar cell.

[0055] To alleviate the above-mentioned problems, an embodiment of the present application provides a substrate, the substrate including a first film layer, and a through-hole formed on the first film layer. When the substrate is bent, the first film layer bends accordingly. Because the first film layer has a through-hole formed on it, the first film layer forms a discontinuous layer around the through-hole when it bends. Compared to a continuous layer, the discontinuous layer is more easily bent, i.e., the discontinuous layer is subjected to less stress when bent. As a result, the first film layer with a through-hole can withstand more bending without generating bending marks or breakage. This achieves the purpose of improving the bending resistance of the first film layer, and further achieves the purpose of improving the bending resistance of the substrate, and effectively reduces the risk of bending marks, fractures, or breakage of the substrate during repeated bending.

[0056] The substrate disclosed in the embodiments of the present application may be used in power consumption devices such as vehicles, ships, and aircraft, but is not limited thereto, and may also be used in solar power generation systems. A power supply system including a power consumption device made of the substrate, solar cells, etc. disclosed in the present application can be used, and thus improving the bending resistance of the solar cell substrate is advantageous in extending the service life of the solar cell.

[0057] The embodiments of the present application provide a power consumption device that uses a solar cell as a power source, and the power consumption device can be used in the fields of communications, transportation, industry and agriculture, lighting, etc., and the power consumption device may be, but is not limited to, a satellite, communications equipment, traffic lights, lighthouses, radio telephone booths, surveillance equipment, power supply systems, camping lights, electric vehicles, electronic device chargers, etc.

[0058] An embodiment of the present application further provides a photovoltaic power generation system, which includes a solar cell, and may be a stand-alone photovoltaic system or a grid-connected photovoltaic system. The stand-alone photovoltaic system includes a photovoltaic array, a battery pack, a charge controller, a power electronic converter (inverter), a load, etc., and its working principle is that solar radiation energy is first converted into electrical energy through the photovoltaic array, and then converted by the power electronic converter to power the load, and excess electrical energy is stored in an energy storage device in the form of chemical energy through the charge controller. When there is a shortage of sunlight, the energy stored in the battery is boosted by the power electronic inverter, filtered, and an industrial frequency transformer to become 220V AC, 50Hz electrical energy that can be used by the AC load. A grid-connected photovoltaic system includes a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and system monitoring. Its working principle is that solar radiation energy is converted by the photovoltaic array, then converted into high-frequency DC, which becomes high-voltage DC, and then inverted by the power electronic inverter to output a sinusoidal AC current with a phase frequency matching the grid voltage to the grid. Each of the above two photovoltaic systems has its own unique characteristics, and can be selected according to specific application scenarios.

[0059] For convenience of explanation, the following embodiment will be described taking as an example a solar cell according to an embodiment of the present application used in a solar power generation system.

[0060] 1 and 2, Fig. 1 is a structural schematic diagram of a solar cell assembly 1000 in a solar power generation system according to some embodiments of the present application. The solar cell assembly 1000 includes a plurality of solar cells 1100. As shown in Fig. 2, the solar cells 1100 are described as perovskite solar cells, which include, in order along the thickness direction, a substrate 1110, a first charge transport layer 1120, a perovskite light absorbing layer 1130, a second charge transport layer 1140, and a metal electrode layer 1150. The substrate 1110 serves as a carrier for the entire perovskite solar cell and provides an assembly environment for other layer structures, such as a transparent electrode layer 1111. The substrate 1110 includes a base and a transparent electrode layer 1111. The transparent electrode layer 1111 is attached to the base. In the embodiments of the present application, the first film layer 100 of the substrate 1110 is part of the base. At the same time, the substrate 1110 exhibits flexibility, allowing the substrate 1110 to bend and form different curved surfaces to adapt to different mounting environments.

[0061] The following introduces and describes a substrate 1110 according to an embodiment of the present application.

[0062] Referring to Figures 2 to 4, an embodiment of the present application provides a substrate 1110, which includes a first film layer 100, on which at least one through hole 110 is drilled.

[0063] It can be understood that the substrate 1110 is the base of the solar cell 1100, and the substrate 1110 can be used as a carrier to manufacture other devices for the solar cell 1100. The substrate 1110 includes a first film layer 100, and the material of the first film layer 100 can be a flexible material such as, but not limited to, glass, tempered glass, quartz, carbon, silicone, plastic, etc. Specifically, the plastic material can be polyethylene terephthalate, polyethylene naphthalate, polyimide, etc.

[0064] It should be understood that when the substrate 1110 is bent, the first film layer 100 is bent at the same time, and the entire first film layer 100 is elastically deformed, and for example, the first film layer 100 may be bent to form a C-shaped cross section. Specifically, the bending direction is not limited in this embodiment, and the bending direction can be selected according to actual circumstances.

[0065] Here, through holes 110 are drilled on the first film layer 100, which penetrate the hole structure of the first film layer 100 along the thickness direction of the first film layer 100, and the through holes 110 are used to relieve stress received when the first film layer 100 is bent, thereby achieving the purpose of improving the bending performance of the first film layer 100. At the same time, drilling the through holes 110 on the first film layer 100 also improves the transmittance of the first film layer 100 to a certain extent.

[0066] It can be understood that by drilling the through holes 110 on the first film layer 100, the first film layer 100 forms a discontinuous layer structure divided at the through holes 110, and when the first film layer 100 is bent, the first film layer 100 forms notches at the through holes 110, making it easier for the discontinuous first film layer 100 to bend; that is, the stress experienced by the first film layer 100 after the through holes 110 are drilled is reduced, and the first film layer 100 can withstand more bending times without generating bending marks or breakage, thereby achieving the purpose of improving the bending resistance of the first film layer 100.

[0067] Specifically, the through holes 110 include various structures such as, but not limited to, circular holes, rectangular holes, elongated holes, waist holes, and triangular holes. The number of through holes 110 is not limited, and the through holes 110 may be one, two, or more. The hole type and number of the through holes 110 can be selected and customized according to actual needs.

[0068] At the same time, the through hole 110 may be drilled at any one location on the first film layer 100, for example, the through hole 110 may be drilled in the center of the first film layer 100, or the through hole 110 may be drilled on the outer edge of the first film layer 100, or the through hole 110 may be drilled on both the outer edge and the center of the first film layer 100.

[0069] In some specific embodiments, when the number of through holes 110 is multiple, the through holes 110 may be arranged on the first film layer 100 in an array, or the through holes 110 may be arranged on the first film layer 100 in an irregular manner.

[0070] In the substrate 1110 according to the embodiment of the present application, when the substrate 1110 is bent, the first film layer 100 is bent and deformed accordingly. However, because the through holes 110 are drilled on the first film layer 100, the presence of the through holes 110 relieves the stress that the surrounding first film layer 100 receives due to bending, thereby achieving the purpose of improving the bending resistance of the first film layer 100, and further achieving the purpose of improving the bending resistance of the substrate 1110, thereby reducing the risk of bending marks, fractures, or breaks occurring on the substrate 1110 during repeated bending, and increasing the service life of the substrate 1110.

[0071] Referring to FIG. 3, in some embodiments, first film layer 100 has a bending axis a, which passes through at least some of through-holes 110 .

[0072] Here, the bending axis a is a single axis that is the center of bending deformation of the first film layer 100. It should be understood that because the first film layer 100 bends and deforms around the bending axis a, the degree of bending deformation of the first film layer 100 at the bending axis a becomes large, and the degree of bending deformation of the portion away from the first film layer 100 at the bending axis a becomes small.

[0073] The number of through holes 110 may be one or more. For example, when the number of through holes 110 is one, the bending axis a passes through this through hole 110, that is, this through hole 110 is opened in the area located at the bending axis a of the first film layer 100. When the first film layer 100 is bent, the degree of bending deformation of the first film layer at the bending axis a is relatively large. At this time, the through hole 110 relieves the stress that the first film layer 100 receives due to bending, thereby achieving the purpose of improving the bending resistance of the first film layer 100 and further achieving the purpose of improving the bending resistance of the substrate 1110.

[0074] When there are multiple through holes 110, the bending axis a can pass through each through hole 110 in turn, and all of the multiple through holes 110 can relieve the stress that the first film layer 100 has received due to bending in areas where the degree of bending deformation is relatively large; or when there are multiple through holes 110, the bending axis a can drill some of the through holes 110, and some of the through holes 110 can be drilled in parts of the first film layer 100 away from the bending axis a, and some of the through holes 110 drilled by the bending axis a can relieve the stress that the first film layer 100 has received due to bending in areas where the degree of bending deformation is relatively large, and some of the through holes 110 can relieve the stress that the first film layer 100 has received due to bending in other areas, allowing the first film layer 100 to relieve the stress that it has received due to bending at multiple locations.

[0075] With this arrangement, when the substrate 1110 is bent, the first film layer 100 is bent and deformed around the bending axis a. It can be understood that the degree of bending deformation of the first film layer 100 is greatest at the bending axis a, and since the bending axis a passes through at least some of the through holes 110, under a bending state, the through holes 110 can relieve the stress experienced by the first film layer 100, and have a better effect of improving bending resistance.

[0076] 2 and 3, in some embodiments, bending axis a passes through each through-hole 110.

[0077] It can be understood that the number of through holes 110 may be one or more.

[0078] When there is only one through hole 110, the bending axis a is drilled through this through hole 110, i.e., this through hole 110 is drilled at a position located on the bending axis a of the first film layer 100. For example, this through hole 110 may be of any hole shape, such as a circular hole, a triangular hole, a rectangular hole, etc., and the through hole 110 may be drilled at any one position along the extension direction of the bending axis a of the first film layer 100, as long as the bending axis a passes through the through hole 110. Alternatively, this through hole 110 may be a strip-shaped hole, and the longitudinal direction of the strip-shaped hole is arranged along the direction of the bending axis a. In this way, the through hole 110 can form a discontinuous layer in the first film layer 100, and the presence of the through hole 110 makes the first film layer 100 easier to bend.

[0079] When there are a plurality of through holes 110, the through holes 110 are arranged along the direction of the bending axis a, and the pitch between the through holes 110 may be the same or different. Alternatively, the pitch between the through holes 110 may increase or decrease along a certain direction, or may increase first and then decrease, or may decrease first and then increase. For example, the through holes 110 may have any shape, such as, but not limited to, a circular hole, a triangular hole, a rectangular hole, or the like.

[0080] With this arrangement, the through holes 110 are arranged in order along the extension direction of the bending axis a, and when the substrate 1110 is bent, the first film layer 100 is bent and deformed around the bending axis a. At this time, the through holes 110 relieve the stress experienced by the first film layer 100, thereby achieving a better effect of improving bending resistance.

[0081] Referring to FIG. 3, in some embodiments, the at least one through-hole 110 is disposed symmetrically with respect to the bending axis a.

[0082] It can be understood that the number of through holes 110 may be one or more.

[0083] When the number of through holes 110 is one, the bending axis a passes through the geometric center of the through hole 110, and the through hole 110 is symmetrical with respect to the bending axis a. Specifically, the through hole 110 may be a symmetrical hole shape such as, but not limited to, a circular hole, a waist hole, an equilateral triangular hole, or a rectangular hole.

[0084] When there are a plurality of through holes 110, the through holes 110 may be arranged in order along the direction of extension of the bending axis a, and the bending axis a may pass through the geometric center of some of the through holes 110, or the bending axis a may pass through the geometric center of each of the through holes 110. Specifically, the through holes 110 may have a symmetrical shape such as, but not limited to, a circular hole, a waist hole, an equilateral triangular hole, or a rectangular hole, and the shapes of the plurality of through holes 110 may be the same or different.

[0085] With this arrangement, at least one through hole 110 is symmetrical with respect to the bending axis a. Therefore, when the first film layer 100 is bent around the bending axis a, the symmetrical through holes 110 can synchronously relieve the stress experienced by the portions of the first film layer 100 on both sides of the bending axis a due to bending. Furthermore, when the bending axis a coincides with the central axis of the first film layer 100, the portions of the first film layer 100 on both sides of the bending axis a can maintain a symmetrical state.

[0086] Referring to FIG. 4, in some embodiments, the width of the through-hole 110 tends to decrease along the direction away from the bending axis a.

[0087] The width of the through holes 110 tends to decrease in the direction away from the bending axis a, i.e., in the direction away from the bending axis a, the width of the through holes 110 may gradually decrease, or may first maintain the same width and then gradually decrease, or may exhibit a cyclic change of first maintaining the same width and then decreasing, or may exhibit a cyclic change of first decreasing and then not changing. For convenience of description, the first film layer 100 will be divided into two parts and described separately, and the bending axis a will be used as a boundary line, with the first film layer 100 on one side of the bending axis a being described as a first side 101 and the first film layer 100 on the other side of the bending axis a being described as a second side 102, thereby describing the positional distribution of the through holes in the first film layer 100.

[0088] Since the bending axis a is drilled in the through hole 110, the through hole 110 is drilled in the first side 101 of the first film layer 100 (for convenience of description, the portion of the through hole 110 located on the first side 101 is referred to as the first hole 111), and specifically, the first hole 111 may be a closed structure such as a semicircular hole (either half of a perfect circle or half of an ellipse is possible), a triangular hole, or a trapezoidal hole, but is not limited to these, and the closing direction is away from the bending axis a, for example, the closing direction may be perpendicular to the bending axis a.

[0089] Similarly, since the bending axis a is drilled in the through hole 110, the through hole 110 is drilled in the second side 102 of the first film layer 100 (for convenience of description, the portion of the through hole 110 located on the second side 102 is referred to as the second hole portion 112), and specifically, the second hole portion 112 may be a closed structure such as a semicircular hole portion (which can be either half of a perfect circle or an ellipse), a triangular hole portion, a trapezoidal hole portion, etc., but is not limited to these, and the bending axis a away from the closing direction, for example, the closing direction may be perpendicular to the bending axis a.

[0090] For example, in some specific embodiments, the through hole 110 includes a first hole portion 111 and a second hole portion 112, where the first hole portion 111 is connected to the second hole portion 112 and combine to form the complete through hole 110. If the first hole portion 111 and the second hole portion 112 are both semicircular holes, the through hole 110 may be a regular circular hole, an elliptical hole, or a waist hole. Alternatively, if the first hole portion 111 and the second hole portion 112 are both triangular holes, the through hole 110 may be a square hole, a diamond hole, or the like. Alternatively, if the first hole portion 111 and the second hole portion 112 are both trapezoidal holes, the through hole 110 may be a hexagonal hole, or the like. Alternatively, in other specific embodiments, the hole shapes of the first hole portion 111 and the second hole portion 112 may be different.

[0091] With this arrangement, when the substrate 1110 bends, the first side 101 and the second side 102 of the first film layer 100 are each bent and deformed around the bending axis a. It can be understood that the degree of bending of the first film layer 100 decreases the farther it is from the bending axis a. Therefore, the width of the first hole 111 is set to decrease in the direction away from the bending axis a to adapt to changes in the degree of bending of the first film layer 100. Similarly, the width of the second hole 112 is set to decrease in the direction away from the bending axis a to adapt to changes in the degree of bending of the first film layer 100.

[0092] Referring to FIG. 5, in some embodiments, the first film layer 100 has a bending axis a, and a through hole 110 is drilled on at least one side of the first film layer 100 that is located on the bending axis a.

[0093] It can be understood that the number of through holes 110 may be one or more.

[0094] When the number of through holes 110 is one, the through hole 110 may be opened on the first side 101 located on one side of the first film layer 100 along the bending axis a or the second side 102 located on the other side of the first film layer 100 along the bending axis a, and when the first side 101 or the second side 102 is bent, the through hole 110 can relieve the stress that the first side 101 or the second side 102 receives due to the bending.

[0095] When there are a plurality of through holes 110, the plurality of through holes 110 may all be opened in a first side portion 101 located on one side of the first film layer 100, which is positioned on the bending axis a, or in a second side portion 102 located on the other side of the first film layer 100, which is positioned on the bending axis a, and these through holes 110 can relieve stress received by the first side portion 101 or the second side portion 102 when the first film layer 100 is bent. Alternatively, some of the plurality of through holes 110 may be opened in the first side portion 101, and another portion of the plurality of through holes 110 may be opened in the second side portion 102, i.e., through holes 110 are opened on both the first side portion 101 and the second side portion 102, and when the first film layer 100 is bent, these through holes 110 can relieve stress received by the first side portion 101 and the second side portion 102 when they are bent.

[0096] Specifically, when there are a plurality of through holes 110, the through holes 110 may be arranged along any one direction. For example, the through holes 110 may be spaced apart along an extension direction parallel to the bending axis a, or the through holes 110 may be spaced apart along a direction forming any angle with the bending axis a. For example, the arrangement direction of the through holes 110 may be set to form an angle with the bending axis a within a range of 0° to 180°, but is not limited thereto. Specifically, the angle may be, but is not limited to, 10°, 30°, 45°, 60°, 90°, 120°, 135°, 150°, etc. At the same time, the intervals between the through holes 110 may be the same or partially the same, or the intervals between the through holes 110 may tend to increase or decrease in a certain direction.

[0097] Here, the through-hole 110 mentioned above includes any hole shape such as a circular hole, a rectangular hole, a strip-like hole, a wave-like hole, etc., but is not limited thereto.

[0098] With such an arrangement, when the first film layer 100 is bent, the first side 101 and the second side 102 of the first film layer 100 are bent and deformed around the bending axis a, and the through holes 110 distributed on at least one of the first side 101 and the second side 102 can relieve the stress received when bending, or when there are multiple through holes 110, limit the radius of curvature when the portion of the first film layer 100 between two adjacent through holes 110 is bent, thereby reducing the risk of damage due to excessive bending.

[0099] Referring to FIG. 5, in some embodiments, the through holes 110 are laid on the first film layer 100 in sequence along a direction perpendicular to the bending axis a.

[0100] It can be understood that the number of through holes 110 is plural, and each through hole 110 is arranged along a direction perpendicular to the bending axis a. Here, the hole shapes of the plurality of through holes 110 may be the same, for example, all of them are circular holes, rectangular holes, elongated holes, wavy holes, etc., or the hole shapes of the plurality of through holes 110 may be partially the same or all of them are different, and the hole shapes of the through holes 110 can be customized according to actual needs.

[0101] For example, in some specific embodiments, the number of through holes 110 may be multiple, the hole shape of the through holes 110 may be rectangular, and the longitudinal direction of the rectangular through holes 110 is parallel to the direction of the bending axis a, and the multiple rectangular through holes 110 are arranged on the first film layer 100 along a direction perpendicular to the bending axis a. It can be understood that the first film layer 100 is bent and deformed around the bending axis a, i.e., the direction perpendicular to the bending axis a is the bending direction of the first film layer 100, and the multiple rectangular through holes 110 are arranged along the bending direction of the first film layer 100. When the first film layer 100 is bent around the bending axis a, each rectangular through hole 110 can form a discontinuous layer in the first film layer 100, reducing the stress experienced by the first film layer 100 when bending, and the portion of the first film layer 100 between two adjacent rectangular through holes 110 can limit the radius of curvature when bending, thereby reducing the risk of possible damage due to excessive bending.

[0102] Specifically, the number of through holes 110 may be an even number, and any one through hole 110 on one side of the bending axis a has a corresponding through hole 110 symmetrically disposed on the other side of the bending axis a. The pitch between the through holes 110 may be the same, or the pitch between the through holes 110 may tend to increase or decrease in the vertical direction away from the bending axis a.

[0103] With this arrangement, when the substrate 1110 is bent, the first film layer 100 is bent and deformed around the bending axis a, and the through holes 110 are arranged in order along a direction perpendicular to the bending axis a, i.e., the through holes 110 are arranged along the bending direction of the first film layer 100, and the through holes 110 can relieve the stress that the first film layer 100 receives around the bending axis a, thereby achieving the effect of improving bending resistance.

[0104] Referring to FIG. 6, in some embodiments, adjacent through holes 110 have a pitch b between them, and the pitch b tends to increase in the direction away from the bending axis a.

[0105] It should be understood that the number of through holes 110 is at least three, thereby having a pitch b of at least two between adjacent through holes 110, which tends to increase the pitch b by at least two.

[0106] The pitch b is the distance between the center points of two adjacent through holes 110. Here, the tendency of the pitch b to increase means that, in the direction away from the bending axis a, the pitch b between two adjacent through holes 110 may continue to increase, or the pitch b between two adjacent through holes 110 may first remain the same and then increase, or the pitch b between two adjacent through holes 110 may first increase and then remain the same. The specific distribution of the through holes 110 can be customized according to actual needs, as long as the pitch b between two adjacent through holes 110 tends to increase in the direction away from the bending axis a, or the distribution of the through holes 110 tends to become sparse in the direction away from the bending axis a.

[0107] It can be understood that the first film layer 100 bends and deforms around the bending axis a, with the degree of bending deformation increasing in the portion of the first film layer 100 close to the bending axis a, but decreasing in the portion of the first film layer 100 away from the bending axis a. Therefore, the pitch b is set to increase in the direction away from the bending axis a, i.e., the through holes 110 where the first film layer 100 is distributed along the bending axis a tend to become denser, and the through holes 110 where the first film layer 100 is distributed away from the bending axis a tend to become sparser, and the distribution of the through holes 110 can adapt to changes in the degree of bending deformation of the first film layer 100.

[0108] With this arrangement, the degree of bending of the first film layer 100 becomes smaller the further it is from the bending axis a. Therefore, the pitch b between adjacent through holes 110 tends to increase in the direction away from the bending axis a, i.e., the through holes 110 tend to become sparser in the direction away from the bending axis a. By adapting to changes in the degree of bending deformation of the first film layer 100, the number of through holes 110 can be reduced and the puncture processing process for the first film layer 100 can be reduced.

[0109] Referring to Figures 5 and 6, in some embodiments, through holes 110 are drilled on both opposing sides of the first film layer 100 that are positioned along the bending axis a, and at least two through holes 110 are distributed symmetrically with respect to the bending axis a.

[0110] It can be understood that the number of through holes 110 may be an even number greater than or equal to two, and the first side 101 on one side located on the bending axis a of the first film layer 100 and the second side 102 on the other side located on the bending axis a of the first film layer 100 may be arranged symmetrically.

[0111] For example, in some specific embodiments, a plurality of through holes 110 are drilled on the first film layer 100, and the through holes 110 may be strip-shaped holes, and their longitudinal direction is parallel to the extension direction of the bending axis a, and each through hole 110 is arranged in sequence along a direction perpendicular to the bending axis a, and any one through hole 110 on the first side 101 has another through hole 110 on the second side 102 that is symmetrical with respect to the bending axis a.

[0112] In some other specific embodiments, a plurality of through holes 110 are drilled on the first film layer 100, and the through holes 110 may have any hole shape, such as circular holes or rectangular holes, and the through holes 110 are arranged in an array on the first film layer 100, for example, the through holes 110 are arranged in four rows and four columns, five rows and six columns, etc. The specific array format of the through holes 110 can be customized according to actual needs, and this is only an illustrative description and does not limit the array format.

[0113] With this arrangement, when the substrate 1110 is bent, the first side 101 and the second side 102 of the first film layer 100 are bent and deformed around the bending axis a, and the symmetrically distributed through holes 110 can simultaneously improve the bending resistance performance of the first side 101 and the second side 102 and improve the symmetry between the first side 101 and the second side 102.

[0114] Referring to FIG. 5 or 6, in some embodiments, the through-hole 110 is a strip-shaped through-hole, and the longitudinal direction of the strip-shaped through-hole is parallel to the extension direction of the bending axis a.

[0115] It can be understood that the specific form of the strip-shaped through hole may be that the through hole 110 is a rectangular hole, and the length of the rectangular hole is much greater than its width, or the specific form of the strip-shaped through hole may be that the through hole 110 is a wavy hole, or the specific form of the elongated through hole 110 may be that the through hole 110 is an elliptical hole, etc.

[0116] For example, in some specific embodiments, the number of strip-shaped through holes is plural, the strip-shaped through holes are rectangular, the length of the rectangle is much greater than its width, the through holes 110 are arranged along a direction perpendicular to the bending axis a, and any one strip-shaped through hole has another strip-shaped through hole symmetrical to the bending axis a. When the first film layer 100 is bent, the first side 101 and the second side 102 of the first film layer 100 are bent around the bending axis a, and the first side 101 and the second side 102 can be subjected to the same stress relaxation effect, thereby improving the bending consistency between the first side 101 and the second side 102.

[0117] With this arrangement, the through holes 110 are set as strip-shaped through holes, and the longitudinal direction of the strip-shaped through holes is parallel to the extension direction of the bending axis a, i.e., the strip-shaped through holes are distributed parallel to the bending axis a. When the substrate 1110 is bent, the first film layer 100 is bent and deformed around the bending axis a, and the strip-shaped through holes interrupt the first film layer 100 to form a discontinuous layer, thereby limiting the radius of curvature of the bending position of the portion of the first film layer 100 between two adjacent through holes 110, and reducing the risk of damage to the first film layer 100 due to bending.

[0118] Referring to FIG. 7, in some embodiments, the substrate 1110 further includes a second film layer 300 that is in intimate contact with the first film layer 100 .

[0119] Here, the second film layer 300 may be used as an inner layer, i.e., the second film layer 300 may be specifically used to adhere to the transparent electrode layer 1111 of the solar cell 1100, and thereby the first film layer 100 may be used as an outer layer, i.e., the first film layer 100 may be installed on the side of the second film layer 300 away from the transparent electrode layer 1111 and used to support and connect the external structure.

[0120] Specifically, the material of the second film layer 300 may be, but is not limited to, glass, tempered glass, quartz, carbon, silicone, plastic, or other organic flexible material. Specifically, the plastic material may be polyethylene terephthalate, polyethylene naphthalate, polyimide, etc. The material of the second film layer 300 may be the same as or different from the material of the first film layer 100, and may be selected according to actual needs.

[0121] With this type of installation, the first film layer 100 is in close contact with the second film layer 300, and by drilling through holes 110 on the second film layer 300, the bending resistance performance is improved, and by using the first film layer 100 as a base structure to support the solar cell device assembly, the impact of drilling the through holes 110 on the assembly of other devices can be reduced.

[0122] Referring to Figures 2 and 7, in some embodiments, the substrate 1110 further includes a central layer 200, which is elastic and includes a first end surface and an opposing second end surface, and the first film layer 100 is attached to the first end surface and the second film layer 300 is attached to the second end surface.

[0123] Here, the central layer 200 may be, but is not limited to, a transparent rubber layer, a transparent silica gel layer, an optically transparent adhesive layer, or the like, as long as the central layer 200 satisfies light transmittance and has elasticity.

[0124] The central layer 200 is used to be placed between the first film layer 100 and the second film layer 300, and can serve to connect the first film layer 100 and the second film layer 300. For example, the first film layer 100 can be adhered to the first end surface of the central layer 200, and the second film layer 300 can be adhered to the second end surface of the central layer 200. Alternatively, locking protrusions can be provided on the first and second end surfaces of the central layer 200, and corresponding groove structures can be provided on the first and second film layers 100 and 300, and the locking protrusions can be engaged with the groove structures to secure the first and second film layers 100 and 300 to the first and second end surfaces of the central layer 200.

[0125] At the same time, due to the elasticity of the central layer 200, when the substrate 1110 is bent, for example, when the side facing the second film layer 300 is bent, the first film layer 100, the second film layer 300, and the central layer 200 are bent and deformed synchronously. Since the first film layer 100 is on the inside of the bend, the first film layer 100 is subjected to a pressing force, and since the second film layer 300 is on the outside of the bend, the second film layer 300 is subjected to a tensile force, but the second film layer 300 is positioned between the first film layer 100 and the second film layer 300. Since the central layer 200 placed between the first and second film layers 100 and 300 undergoes elastic deformation when bent, the central layer 200 acts as a neutral layer to offset the compressive force of a portion of the first film layer 100 and the tensile force of a portion of the second film layer 300, thereby alleviating the stress received when the first and second film layers 100 and 300 are bent.Furthermore, by achieving the objective of improving the bending resistance of the first and second film layers 100 and 300, the objective of improving the bending resistance of the substrate 1110 can be achieved.

[0126] Referring to FIG. 7, in some embodiments, through holes are drilled on the central layer 200, and the through holes communicate with the through holes 110.

[0127] It can be understood that the through hole is a hole structure that penetrates along the thickness direction of the central layer 200. The through hole communicates with the through hole 110, and specifically, a part of the through hole may communicate with a part of the through hole 110, or the through hole may directly face the through hole 110, or the opening end of the through hole may include the opening end of the through hole 110, or the opening end of the through hole 110 may include the opening end of the through hole.

[0128] At the same time, at least some of the through holes 110 are connected to the through holes, i.e., the number of through holes may be smaller than the number of through holes 110, and only some of the through holes 110 may be connected to the corresponding through holes, or the number of through holes may be the same as or greater than the number of through holes 110, and each through hole 110 may have at least one through hole connected to it.

[0129] By installing in this manner, through holes are drilled on the central layer 200, thereby reducing the area of ​​the central layer 200 exposed to the first film layer 100 through the through holes 110, thereby reducing the possibility of dust falling onto the central layer 200 through the through holes 110 and affecting the light transmittance of the central layer 200.

[0130] Referring to FIG. 7, in some embodiments, the through-hole is directly opposite the through-hole 110 .

[0131] The through holes are directly opposite the through holes 110, i.e., each through hole 110 has one corresponding through hole, and since the through holes are directly opposite the through holes 110, the central layer 200 is not exposed to the outside of the first film layer 100 through the through holes 110.

[0132] By installing in this manner, a through hole directly facing the through hole 110 is drilled on the central layer 200, thereby avoiding exposure of the central layer 200 to the first film layer 100 through the through hole 110, and reducing the possibility of dust falling onto the central layer 200 through the through hole 110 and affecting the light transmittance of the central layer 200.

[0133] Referring to FIG. 7, in some embodiments, the central laminate 200 is a transparent adhesive laminate.

[0134] It can be understood that the transparent adhesive layer may also be called an optically clear adhesive layer (abbreviated as OCA), and because the optically clear adhesive layer is a flexible polymeric viscoelastic material, the first film layer 100 can be adhered to a first end surface of the optically clear adhesive layer, and the second film layer 300 can be adhered to a second end surface of the optically clear adhesive layer, thereby realizing the attachment and fixation of the first film layer 100 and the second film layer 300. At the same time, the flexible optically clear adhesive layer undergoes a relatively large degree of deformation in a bent state, and can recover the deformation in a non-bent state.

[0135] With this arrangement, the optically transparent adhesive layer can be used as a neutral layer between the first film layer 100 and the second film layer 300, and when the substrate 1110 is bent, the optically transparent adhesive layer can offset some of the stress in the first film layer 100 and the second film layer 300, thereby achieving the purpose of improving the bending resistance of the substrate 1110.

[0136] Referring to Figures 1 and 7, in some embodiments, the first film layer 100 is a plastic film layer.

[0137] It can be understood that the plastic film layer may be a layer made of a material such as, but not limited to, polyethylene terephthalate, polyethylene naphthalate, polyimide, etc., and all of these plastic film layers have good support for the first film layer 100 to support the transparent electrode layer 1111, and these plastic film layers also have excellent light transmittance.

[0138] Referring to Figures 1 and 7, in some embodiments, second film ply 300 is a plastic film ply.

[0139] Similarly, the plastic film layer may be a layer made of a material such as polyethylene terephthalate, polyethylene naphthalate, or polyimide, but is not limited to these. All plastic film layers made of these materials have good support and excellent light transmittance.

[0140] For example, in some specific embodiments, the first film layer 100 and the second film layer 300 may both be plastic film layers made of polyethylene terephthalate material, and the central layer 200 may be an optically transparent adhesive layer, so that the three-layer structure of the substrate 1110 may be polyethylene terephthalate, optically transparent adhesive, and polyethylene terephthalate.

[0141] In a specific production process, the first end surface of the optically transparent adhesive layer and the first film layer 100 are first adhered to each other to form an integrated structure, and then the optically transparent adhesive layer and the first film layer 100 are punctured, with the punctured hole passing through the transparent adhesive layer and the first film layer 100 at the same time; after the puncturing operation is completed, the second end surface of the optically transparent adhesive layer is then adhered to the second film layer 300.

[0142] An embodiment of the present application further provides a solar cell 1100, which includes the above-mentioned substrate 1110. The solar cell 1100 may be any one of the solar cells 1100 introduced in the above-mentioned embodiments, and may be, for example, a perovskite solar cell 1100, which will not be further described herein.

[0143] An embodiment of the present application further provides a solar power generation system, which includes the above solar cell 1100. The solar power generation system may be any one of the solar power generation systems introduced in the above embodiments, such as a stand-alone photovoltaic system, a grid-connected photovoltaic system, etc., and will not be further described here.

[0144] An embodiment of the present application further provides a power consuming device, which includes the above solar cell 1100. The power consuming device may be any one of the power consuming devices introduced in the above embodiments, such as an electric vehicle, an electronic device charger, etc., which will not be further described herein.

[0145] The above are only preferred embodiments of the present application, and are not intended to limit the present application. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application. [Explanation of symbols]

[0146] 1000 Solar Cell Assemblies 1100 solar cells 1110 board 1111 Transparent electrode layer 1120 First charge transport layer 1130 Perovskite light absorbing layer 1140 Second Charge Transport Layer 1150 metal electrode layer, 100 First film layer 101 First Side 102 Second Side 110 through hole 111 First hole 112 Second Hole 200 central layer body 300 Second film layer a Flexion axis b pitch

Claims

1. A substrate, A substrate comprising a first film layer, the first film layer having at least one through hole drilled therein.

2. The substrate of claim 1 , wherein the first film layer has a bending axis, the bending axis passing through at least a portion of the through-hole.

3. The substrate of claim 2 , wherein the bending axis passes through each of the through holes.

4. 4. The substrate according to claim 2, wherein the at least one through hole is disposed symmetrically with respect to the bending axis.

5. 5. The substrate according to claim 3, wherein the width of the through holes tends to decrease in a direction away from the bending axis.

6. The substrate according to claim 1, wherein the first film layer has a bending axis, and the through hole is opened on at least one side of the first film layer located at the bending axis.

7. 7. The substrate according to claim 6, wherein the through holes are arranged on the first film layer in order along a direction perpendicular to the bending axis.

8. 8. The substrate of claim 7, wherein the through holes have a pitch between adjacent through holes, the pitch tending to increase in a direction away from the bending axis.

9. The substrate according to claim 6, characterized in that the through holes are drilled on both opposing sides of the first film layer that are located on the bending axis, and at least two of the through holes are distributed symmetrically with respect to the bending axis.

10. 10. The substrate according to claim 7, wherein the through-hole is a strip-shaped through-hole, and the longitudinal direction of the strip-shaped through-hole is parallel to the extending direction of the bending axis.

11. 11. The substrate of claim 1, further comprising a second film layer, the second film layer being in close contact with the first film layer.

12. 12. The substrate of claim 11, wherein the first film layer is a plastic film layer and / or the second film layer is a plastic film layer.

13. 12. The substrate of claim 11, further comprising a central layer, the central layer having elasticity, the central layer having a first end surface and an opposing second end surface, the first film layer being attached to the first end surface, and the second film layer being attached to the second end surface.

14. 14. The substrate according to claim 13, wherein a through hole is formed on the central layer, and the through hole communicates with the through hole.

15. The substrate according to claim 14 , wherein the through-hole is directly opposite the through-hole.

16. 14. The substrate of claim 13, wherein the central layer is a transparent adhesive layer.

17. A solar cell comprising a substrate according to any one of claims 1 to 16.

18. A photovoltaic power generation system comprising the solar cell according to claim 17.

19. 18. A power consuming device comprising the solar cell of claim 17.