Antenna-on-glass with through-glass via side wall shielding structure

Abstract

Techniques relating to the structure of an antenna device are disclosed. In one embodiment, the antenna device includes a glass substrate having an upper surface, a lower surface, and sides; a first conductive structure on the upper surface of the glass substrate; a second conductive structure on the lower surface of the glass substrate; and a TGV structure including a first conductive film on the sidewall of a first through-glass via (TGV) hole, wherein the first conductive film is configured to bond the first conductive structure to the second conductive structure; and the side includes a plurality of metallized recess structures, each having a recessed sidewall and a plurality of second conductive films on the recessed sidewalls of the plurality of metallized recess structures, wherein each recessed sidewall has a shape corresponding to a partial TGV hole.

Description

Technical Field

[0001] (Cross - Reference to Related Applications) This patent application claims the benefit of U.S. Provisional Patent Application No. 63 / 490,172, filed on March 14, 2023, titled "ANTENNA ON GLASS WITH THROUGH GLASS VIA SIDEWALL ELECTROMAGNETIC INTERFERENCE SHIELDING", which has been assigned to the assignee of this application and is hereby incorporated by reference in its entirety.

[0002] The present disclosure generally relates to antenna devices, and more specifically to an antenna - on - glass die having a through - glass via (TGV) sidewall shielding structure.

Background Art

[0003] Integrated circuit technology has made great progress in improving computing power by miniaturizing active components. Package devices can be found in many electronic components including processors, servers, radio frequency (RF) integrated circuits, etc. Packaging technology is cost - effective for multi - pin devices and / or high - volume components.

[0004] In addition, an antenna - on - glass (AOG) die can be used to form an antenna within a radio frequency (RF) front - end circuit configuration (e.g., used at millimeter wave (mmWave)). The RF front - end circuit configuration can be further implemented on a package substrate along with other electrical components. However, without an appropriate shielding structure (e.g., for electromagnetic interference (EMI) shielding), an antenna based on an AOG die may still be affected by EMI from adjacent components, which can cause degradation of antenna gain, throughput, and / or bandwidth.

[0005] Therefore, in order to address the aforementioned problems, there is a need for improved AOG dies that can provide a shielding structure and for methods to manufacture such AOG dies. [Overview of the Initiative]

[0006] The following provides a simplified overview of one or more embodiments disclosed herein. Therefore, this overview should not be considered a broad overview of all intended embodiments, nor should it be considered to identify the main or important elements of all intended embodiments, or to define the scope relevant to any particular embodiment. Accordingly, the sole purpose of this overview is to provide, in a simplified form, certain concepts relating to one or more embodiments of the mechanisms disclosed herein, prior to the detailed descriptions presented below.

[0007] In one embodiment, the antenna device comprises a glass substrate having an upper surface, a lower surface, and a side portion surrounding the glass substrate and connecting the upper and lower surfaces; a first conductive structure on the upper surface of the glass substrate; a second conductive structure on the lower surface of the glass substrate; and a TGV structure including a first conductive film on the side wall of a first through-glass via (TGV) hole, wherein the first TGV hole is defined within the glass substrate, extends from the upper surface to the lower surface of the glass substrate, and the first conductive film is configured to bond the first conductive structure to the second conductive structure; the side portion includes a plurality of metallized recess structures, each of which has a recess side wall connecting the upper and lower surfaces and a plurality of second conductive films on the recess side walls of the plurality of metallized recess structures, and each recess side wall of the plurality of metallized recess structures has a shape corresponding to a partial TGV hole.

[0008] In one embodiment, a method for manufacturing an antenna device is a glass substrate having an upper surface, a lower surface, and a side portion surrounding the glass substrate and connecting the upper and lower surfaces, comprising forming a first conductive structure on the upper surface of the glass substrate, forming a second conductive structure on the lower surface of the glass substrate, and forming a TGV structure including a first conductive film on the side wall of a first through-glass via (TGV) hole, wherein the first TGV hole is defined within the glass substrate, extends from the upper surface to the lower surface of the glass substrate, and the first conductive film is configured to bond the first conductive structure to the second conductive structure, wherein the side portion includes a plurality of metallized recess structures, each of the plurality of metallized recess structures having a recess side wall connecting the upper and lower surfaces and a plurality of second conductive films on the recess side walls of the plurality of metallized recess structures, and each recess side wall of the plurality of metallized recess structures has a shape corresponding to a partial TGV hole.

[0009] In one embodiment, the electrical device comprises one or more processors and an antenna device coupled to one or more processors, wherein the antenna device is a glass substrate having an upper surface, a lower surface, and sides surrounding the glass substrate and connecting the upper and lower surfaces, a first conductive structure on the upper surface of the glass substrate, a second conductive structure on the lower surface of the glass substrate, and a TGV structure including a first conductive film on the sidewall of a first through-glass via (TGV) hole, the first TGV The TGV structure comprises a pore defined within the glass substrate, extending from the upper surface to the lower surface of the glass substrate, and a first conductive film configured to bond the first conductive structure to a second conductive structure, the side portion including a plurality of metallized recess structures, each of which has a recess side wall connecting the upper and lower surfaces, and a plurality of second conductive films located on the recess side walls of the plurality of metallized recess structures, and each recess side wall of the plurality of metallized recess structures has a shape corresponding to a partial TGV pore.

[0010] Other purposes and advantages associated with the embodiments disclosed herein will become apparent to those skilled in the art based on the accompanying drawings and detailed description.

[0011] A more complete understanding of many aspects of this disclosure and their associated advantages will be easier to obtain, as they will be better understood by referring to the following detailed description and considering it together with the accompanying drawings, which are presented merely for illustrative purposes and not to limit this disclosure. [Brief explanation of the drawing]

[0012] [Figure 1A] This is a simplified perspective view of an exemplary antenna-on-glass (AOG) die according to an aspect of the present disclosure. [Figure 1B] This is a simplified cross-sectional view of an exemplary AOG die shown in Figure 1A, according to an aspect of the present disclosure. [Figure 1C] An enlarged view of a through-glass via (TGV) structure according to an aspect of this disclosure is shown. [Figure 1D] An enlarged view of the metallized recess structure according to an aspect of this disclosure is shown. [Figure 1E] An enlarged view of the metallized TGV pore structure according to an aspect of this disclosure is shown. [Figure 2A] A top view of a glass substrate wafer according to an aspect of this disclosure is shown. [Figure 2B] A top view of a glass substrate panel according to an aspect of this disclosure is shown. [Figure 3A] This is a top view of a portion of a glass substrate according to an embodiment of the present disclosure. [Figure 3B] This is an enlarged top view of the glass substrate portion of Figure 3A according to an embodiment of the present disclosure. [Figure 3C] This is an enlarged top view of the portion of the AOG die separated from the glass substrate according to an aspect of the present disclosure. [Figure 4] This is a simplified top view of an AOG die showing another exemplary configuration according to an aspect of the present disclosure, in which a conductive film on a recessed sidewall is connected to a ground reference level. [Figure 5A] Simplified cross-sectional views of structures at various stages in the manufacturing of one or more AOG dies according to aspects of this disclosure are shown. [Figure 5B] Simplified cross-sectional views of structures at various stages in the manufacturing of one or more AOG dies according to aspects of this disclosure are shown. [Figure 5C] Schematic cross-sectional views of structures in various stages of manufacturing one or more AOG dies according to aspects of the present disclosure are shown. [Figure 5D] Schematic cross-sectional views of structures in various stages of manufacturing one or more AOG dies according to aspects of the present disclosure are shown. [Figure 5E] Schematic cross-sectional views of structures in various stages of manufacturing one or more AOG dies according to aspects of the present disclosure are shown. [Figure 5F] Schematic cross-sectional views of structures in various stages of manufacturing one or more AOG dies according to aspects of the present disclosure are shown. [Figure 5G] Schematic cross-sectional views of structures in various stages of manufacturing one or more AOG dies according to aspects of the present disclosure are shown. [Figure 5H] Schematic cross-sectional views of structures in various stages of manufacturing one or more AOG dies according to aspects of the present disclosure are shown. [Figure 5I] Schematic cross-sectional views of structures in various stages of manufacturing one or more AOG dies according to aspects of the present disclosure are shown. [Figure 5J] Schematic cross-sectional views of structures in various stages of manufacturing one or more AOG dies according to aspects of the present disclosure are shown. [Figure 5K] Schematic cross-sectional views of structures in various stages of manufacturing one or more AOG dies according to aspects of the present disclosure are shown. [Figure 5L] Schematic cross-sectional views of structures in various stages of manufacturing one or more AOG dies according to aspects of the present disclosure are shown. [Figure 5M] Schematic cross-sectional views of structures in various stages of manufacturing one or more AOG dies according to aspects of the present disclosure are shown. [Figure 5N] Schematic cross-sectional views of structures in various stages of manufacturing one or more AOG dies according to aspects of the present disclosure are shown. [Figure 6] A method for manufacturing an antenna device according to aspects of the present disclosure is shown. [Figure 7] A mobile device according to aspects of the present disclosure is shown. [Figure 8] Various electrical devices that may incorporate the antenna device described herein, according to aspects of this disclosure, are shown.

[0013] By convention, features depicted in the drawings may not be drawn to scale. Therefore, the dimensions of depicted features may be enlarged or reduced as appropriate for clarity. By convention, some of the drawings are simplified for clarity. Therefore, the drawings may not depict all parts of a particular apparatus or method. Furthermore, similar reference numerals indicate similar features throughout this specification and the drawings. [Modes for carrying out the invention]

[0014] The aspects of this disclosure are provided in the following description and related drawings, which cover various examples provided for illustrative purposes. Alternative aspects may be devised without departing from the scope of this disclosure. In addition, well-known elements of this disclosure are not described in detail or are omitted so as not to obscure the relevant details of this disclosure.

[0015] Various embodiments generally relate to antenna devices (e.g., antenna-on-glass (AOG) dies) that include a plurality of metallized recess structures formed on the side of a glass substrate of the antenna device, and methods for forming antenna devices having metallized recess structures.

[0016] Certain aspects of the subject matter described herein can be implemented to realize one or more of the following potential advantages. In some examples, the process of forming the metallized recess structure can be integrated with the process of forming the TGV structure, so as not to significantly increase the complexity of the manufacturing process. On the other hand, the EMI shielding provided by the metallized recess structure can improve antenna performance (e.g., antenna gain, throughput, and / or bandwidth).

[0017] In this specification, the terms “exemplary” and / or “example” are used to mean “to serve as an example, case, or illustration.” Any aspect described herein as “exemplary” and / or “example” should not necessarily be construed as being preferable or more advantageous than any other aspect. Similarly, the term “aspects of the disclosure” does not require that all aspects of the disclosure include the features, advantages, or modes of operation discussed.

[0018] Those skilled in the art will understand that the information and signals described below may be represented using any of a variety of different techniques and methods. For example, the data, instructions, commands, information, signals, bits, symbols, and chips that may be mentioned throughout the following description may be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, optical fields or optical particles, or any combination thereof, depending in part on the particular application, desired design, corresponding technology, etc.

[0019] Furthermore, many embodiments are described, for example, in terms of sequences of actions to be performed by elements of a computing device. It will be recognized that the various actions described herein can be performed by specific circuits (e.g., application-specific integrated circuits, ASICs), by program instructions executed by one or more processors, or a combination of both. In addition, the sequence(s) of actions described herein can be considered, when executed, to be fully embodied in any form of non-temporary computer-readable storage medium that stores a corresponding set of computer instructions that cause or instruct the relevant processors of the device to perform the functionality described herein. Thus, the various embodiments of this disclosure can be embodied in several different forms, all of which are intended to fall within the scope of the claimed subject matter. In addition, for each of the embodiments described herein, any corresponding form of such embodiment may be described herein, for example, as “logic configured to perform” the described actions.

[0020] Figure 1A is a simplified perspective view of an exemplary antenna-on-glass (AOG) die 100 according to an aspect of the present disclosure. As a simplified perspective view to illustrate non-limiting examples, various features of the AOG die 100 may be simplified or not shown in Figure 1A. In some aspects, the AOG die 100 may be incorporated into electrical devices such as music players, video players, entertainment units, navigation devices, communication devices, mobile devices, mobile phones, smartphones, personal digital assistants, stationary terminals, tablet computers, computers, wearable devices, laptop computers, servers, Internet of Things (IoT) devices, devices in automobiles, or other applicable devices.

[0021] As shown in Figure 1A, the AOG die 100 may include one or more antenna components such as antenna components 101, 103, 105, 107, and 109 (in Figure 1, dotted lines indicate the boundaries between them). In some embodiments, each of the antenna components 101, 103, 105, 107, and 109 may share a similar configuration.

[0022] In some embodiments, the AOG die 100 may include a glass substrate 110 and a metallization structure 120 beneath the glass substrate 110. The glass substrate 110 may have an upper surface 112, a lower surface 114, and a side portion 116 that surrounds the glass substrate 110 and connects the upper surface 112 and the lower surface 114. In some embodiments, the first conductive layer may be located on the upper surface 112 and may include various conductive structures such as a conductive structure 132 configured as an antenna element (e.g., a patch antenna in this example) and a conductive structure 134 configured as a conductive path for an antenna component 101.

[0023] In some embodiments, a second conductive layer may be located on the bottom surface 114 as part of the metallization structure 120 and may include various conductive structures (e.g., conductive structures 122 and 124 in Figure 1B, not shown in Figure 1A). In some embodiments, there may be a first insulating layer located on the top surface 112 of the glass substrate 110 and covering at least a portion of the conductive structures on the top surface 112 of the glass substrate 110 (e.g., insulating layer 162 in Figure 1B, not shown in Figure 1A). In some embodiments, there may be a second insulating layer located on the bottom surface 114 of the glass substrate 110 and covering at least a portion of the conductive structures on the bottom surface 114 of the glass substrate 110 (e.g., insulating layer 164 in Figure 1B, not shown in Figure 1A). In some embodiments, the second insulating layer 164 may be part of the metallization structure 120. In some embodiments, the metallization structure 120 may include one or more additional insulating layers, conductive traces, conductive vias, conductive terminal structures, or any combination thereof. In some embodiments, the first insulating layer 162 and the second insulating layer 164 may be interlayer dielectric layers (ILDs).

[0024] In some embodiments, the AOG die 100 may include through-glass via (TGV) structures (e.g., TGV structures 142 and 144 of the antenna component 101) in which one or more conductive structures on the upper surface 112 are electrically coupled to one or more conductive structures on the lower surface 114. In some embodiments, each TGV structure (e.g., TGV structure 142 or TGV structure 144) may include a TGV hole and at least a first conductive film (e.g., conductive film 172 in Figures 1B and 1C) on the sidewall of the TGV hole.

[0025] The side portion 116 may include a plurality of metallized recess structures 152. In some embodiments, the plurality of metallized recess structures 152 may have recess sidewalls connecting the upper surface 112 and the lower surface 114, and each recess of the plurality of metallized recess structures 152 may have a shape corresponding to a partial TGV hole. In some embodiments, a plurality of second conductive films (e.g., conductive film 174 in Figure 1B, shown as a shaded layer in Figure 1A) may be disposed on the recess sidewalls of the plurality of metallized recess structures 152, respectively.

[0026] In addition, the AOG die 100 may include one or more metallized TGV hole structures 154 passing through the glass substrate 110. In some embodiments, at least portion of one or more metallized TGV hole structures 154 may be defined along the boundaries between antenna components 101, 103, 105, 107, and 109. In some embodiments, each of the one or more metallized TGV hole structures 154 may correspond to a TGV hole having a second conductive film (e.g., conductive film 176 in Figure 1B) similar to the conductive film of the metallized recess structure 152, disposed on the sidewall of the TGV hole.

[0027] Figure 1B is a simplified cross-sectional view of an exemplary portion of the AOG die 100 in Figure 1A (corresponding, for example, to portions of antenna component 101 and antenna component 103) according to an aspect of the present disclosure. In Figure 1B, the same or similar parts as in Figure 1A are denoted by the same reference numerals, and detailed descriptions may be omitted.

[0028] In Figure 1B, the first insulating layer 162 is indicated by a dotted line, indicating that the first insulating layer 162 is not shown in Figure 1A. Also, in a simplified cross-sectional view, various conductive traces, vias, and / or conductive terminal structures embedded in or placed on the metallization structure 120 may be simplified in Figure 1B. In some embodiments, the first insulating layer 162 or the second insulating layer 164 may include silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, a silicone-based polymer dielectric, or any combination thereof.

[0029] As shown in Figure 1B, the metallization structure 120 may further include conductive terminal structures 182 and 184. In some embodiments, the conductive terminal structure 182 may be electrically coupled to the conductive structure 124 through an opening in the second insulating layer 164. In some embodiments, the conductive terminal structure 184 may be electrically coupled to the conductive structure 122 through another opening in the second insulating layer 164. In some embodiments, as non-limiting examples, each of the conductive terminal structures 182 and 184 may correspond to a solder bump, a copper pillar bump, or a microball bump.

[0030] As shown in Figure 1B, the second conductive layer may include a conductive structure 122 electrically coupled to the conductive structure 132 through the TGV structure 142. The second conductive layer may further include a conductive structure 124, which is a ground conductive structure electrically coupled to the ground reference level, and may be configured as a ground panel for the antenna element formed by the conductive structure 132.

[0031] Figure 1C shows an enlarged view of a through-glass via (TGV) structure 142 according to an aspect of the present disclosure. As shown in Figures 1B and 1C, in some aspects, the first conductive film 172 of each TGV structure 142 may include a first portion 172a and a second portion 172b, the first portion 172a being located between the sidewall of the TGV hole and the second portion 172b. In some aspects, a dry film dielectric 173 may fill the space within the TGV structure 142 surrounded by the first conductive film 172.

[0032] Figure 1D shows an enlarged view of a metallized recess structure 152 according to an aspect of the present disclosure. As shown in Figures 1B and 1D, in some aspects the metallized recess structure 152 may include a second conductive film 174 disposed on the sidewall of each recess of the metallized recess structure 152. Figure 1E shows an enlarged view of a metallized TGV hole structure 154 according to an aspect of the present disclosure. As shown in Figures 1B and 1E, in some aspects the metallized TGV hole structure 154 may include a second conductive film 176 disposed on the sidewall of each TGV hole of the metallized TGV hole structure 154. In some aspects the second conductive films 174 and 176 may be electrically coupled to a ground conductive structure such as a conductive structure 124.

[0033] In some embodiments, the first portion 172a of the first conductive film 172, and the second conductive films 174 and 176 of each metallized recess structure 152 or metallized TGV pore structure 154, may correspond to a seed conductive film and may be made of a first material such as titanium, copper, or a combination thereof. In some embodiments, the second portion 172b of the first conductive film 172 may correspond to an additional conductive film (e.g., by deposition or plating) on ​​the seed layer and may be made of a second material such as copper. Thus, in some embodiments, the thickness of the first conductive film 172 may be greater than the thickness of the second conductive films 174 and 176. In some embodiments, each of the conductive structures on the upper surface 112 and the conductive structures on the lower surface 114 may also include a first portion made of the first material corresponding to a seed layer and a second portion made of the second material corresponding to an additional conductive film.

[0034] In some embodiments, a second conductive film 174 on the recess sidewalls of a plurality of metallized recess structures 152 may be electrically coupled to an earth reference level, thereby configuring the second conductive film 174 on the recess sidewalls of the plurality of metallized recess structures 152 as a shielding structure for shielding the antenna elements of the AOG die 100 from other components outside the AOG die. In some embodiments, a second conductive film 176 on the sidewall of a metallized TGV hole structure 154 may be electrically coupled to an earth reference level, thereby configuring the second conductive film 174 on the sidewall of the metallized TGV hole structure 154 as a shielding structure for shielding the individual antenna elements of the AOG die 100 from each other.

[0035] In some non-limiting examples, the conductive structure 132 may be configured as a patch antenna operating in the millimeter-wave frequency range. In these examples, the thickness of the glass substrate 110 may range from 0.7 millimeters (mm) to 1.0 mm. In these examples, the diameter of the TGV holes used to form the metallized recess structure 152 may range from 80 micrometers (μm) to 150 μm. In these examples, the pitch between two adjacent metallized recess structures may range from 80 μm to 150 μm. In some embodiments, the pitch between two adjacent metallized recess structures may be set to be approximately the same as the diameter of the TGV holes used to form the metallized recess structure (e.g., within a 5% tolerance).

[0036] In some embodiments, EMI shielding provided by metallized recess structures and / or metallized TGV hole structures can improve antenna performance (e.g., antenna gain, throughput, and / or bandwidth). In some embodiments, EMI shielding can effectively confine electromagnetic energy within antenna components and / or effectively reduce electromagnetic interference from adjacent components outside the antenna components. Thus, degradation of the directivity and gain of each antenna component caused by EMI can be reduced, and therefore, antenna throughput and / or bandwidth can be improved. In some examples, shielding structures such as those discussed in Figures 1A to 1E can improve antenna gain by at least 1 dB, increase throughput by at least 5%, and / or increase bandwidth by 10% compared to a similar AOG die configuration without metallized recess structures 152 on its sides.

[0037] Figure 2A shows a top view of a glass substrate wafer 210 according to an embodiment of the present disclosure. In some embodiments, the glass substrate 110 of the AOG die 100 may be based on a glass-based substrate in the form of a glass substrate wafer 210. In some embodiments, the glass substrate wafer 210 may be used to form a plurality of antenna components, and five antenna components 212 may correspond to the AOG die 100.

[0038] Figure 2B shows a top view of a glass substrate panel 220 according to an embodiment of the present disclosure. In some embodiments, the glass substrate 110 of the AOG die 100 may be based on a glass-based substrate in the form of a glass substrate panel 220. In some embodiments, the glass substrate panel 220 may be used to form a plurality of antenna components, and five antenna components 222 may correspond to the AOG die 100.

[0039] Figure 3A is a top view of a portion 300 of a glass substrate (e.g., the glass substrate wafer 210 in Figure 2A or the glass substrate panel 220 in Figure 2B) according to an embodiment of the present disclosure. Each antenna component (unlabeled) within the portion 300, defined by the dotted boundary line, may correspond to an antenna component formed within the glass substrate. In some embodiments, an AOG die (e.g., AOG die 100) may be formed by performing a framing process that separates the AOG die (e.g., including five consecutive antenna components) from the glass substrate.

[0040] Figure 3B is an enlarged top view of a portion 310 of a glass substrate, which is part of portion 300 of Figure 3A, according to an aspect of the present disclosure. In some aspects, portion 310 shows an AOG die (e.g., AOG die 100) which is still part of a glass substrate, with dotted lines 312, 314, and 316 defining three boundaries of the AOG die, and dotted line 318 defining the boundary between two antenna components of the AOG die (e.g., antenna components 101 and 103). Multiple metallized TGV hole structures 322 may be formed along boundary line 312. Multiple metallized TGV hole structures 324 may be formed along boundary line 314. Multiple metallized TGV hole structures 326 may be formed along boundary line 316, and multiple metallized TGV hole structures 328 may be formed along boundary line 318.

[0041] Figure 3C is an enlarged top view of a portion of an AOG die (e.g., AOG die 100) separated from a glass substrate, such as a glass substrate wafer or glass substrate panel, as shown in Figures 3A and 3B, according to an embodiment of the present disclosure. In some embodiments, to form the AOG die 100, a fragmentation process may be performed on the glass substrate shown in Figure 3B, cutting along the boundaries 312, 314, and 316 shown in Figure 3B. In some embodiments, by performing a fragmentation process that separates the AOG die 100 from the glass substrate by cutting through the metallized TGV hole structures 322, 324, and 326, the remaining portions of the metallized TGV hole structures 322, 324, and 326 (which remain with the AOG die) become the metallized recess structures 152 on the side of the glass substrate of the AOG die 100. In some embodiments, the metallized TGV hole structure 328 remains and becomes the metallized TGV hole structure 154.

[0042] As shown in Figures 3A to 3C, the multiple metallized recess structures 152 of the AOG die 100 on which the conductive film 174 is placed may originally have a similar shape to the metallized TGV hole structures 154 having the conductive film 176 on the sidewall when the AOG die 100 is still part of the glass substrate. The metallized TGV hole structures on the edges (e.g., sides) of the AOG die 100 (with the conductive film on the sidewall) may become metallized recess structures 152 (with the conductive film on the recess sidewall) after the fragmentation process that separates the AOG die 100 from the rest of the glass substrate.

[0043] In some embodiments, the grounding conductive structure may be formed based on a second conductive layer on the lower surface of the glass substrate (for example, the example shown in Figure 1B), or on a first conductive layer on the upper or lower surface of the glass substrate, or any combination thereof. Figure 4 is a simplified top view of an AOG die 400 showing another exemplary configuration according to an embodiment of the present disclosure, in which a grounding conductive structure 430 is located on the upper surface of the glass substrate 410 of the AOG die 400, and a conductive film 422 on the recessed side wall of the side of the AOG die 400 is connected to a grounding reference level.

[0044] As shown in Figure 4, the AOG die 400 may correspond to an example where the AOG die contains only a single antenna element. In Figure 4, various conductive structures on the upper surface of the glass substrate 410 are not shown for clarity, except for the ground conductive structure 430. In some embodiments, the AOG die 400 may be implemented based on the AOG structure shown by the exemplary AOG die 100, and detailed descriptions of various components may be simplified or omitted.

[0045] As shown in Figure 4, the AOG die 400 may include a side portion on which a plurality of metallized recess structures are formed. Each metallized recess structure includes a conductive film 422 on the recess sidewall. The AOG die 400 further includes, as a non-limiting example, TGV structures 442, 444, 446, 448, 452, and 454. In some embodiments, the TGV structures 442, 444, 446, 448, 452, and 454 may be electrically coupled to one or more conductive structures on the upper surface (not shown) of the glass substrate 410 and may be configured to carry power or signals. In some embodiments, the TGV structures 452 and 454 may be configured to carry an earth reference level through one or more conductive terminals formed beneath the glass substrate.

[0046] In this example, the ground conductive structure 430 formed on the upper surface of the glass substrate 410 may include a conductive ring structure 432 that integrally electrically couples the conductive film 422 of the metallized recess structure. The ground conductive structure 430 may further include a conductive structure 434 that connects the conductive ring structure 432 to the TGV structure 452, and a conductive structure 436 that connects the conductive ring structure 432 to the TGV structure 454.

[0047] In some embodiments, as an alternative example, the grounding conductive structure may be formed beneath the glass substrate as a grounding reference panel that electrically connects all the conductive films 422 of the metallized recess structure, similar to those shown in Figures 1A to 1E. In some embodiments, as yet another example, the grounding conductive structure may be formed beneath the glass substrate in a similar form to the grounding conductive structure 430 that electrically connects all the conductive films 422 of the metallized recess structure, based on a conductive ring structure.

[0048] Figures 5A to 5N show simplified cross-sectional views of structures at various stages of manufacturing one or more AOG dies (for example, having a structure based on the AOG die 100) according to embodiments of the present disclosure. Among the components shown in Figures 5A to 5N, components identical or similar to those in Figures 1A to 1E are denoted by the same reference numerals, and their detailed descriptions may be omitted.

[0049] As shown in Figure 5A, a structure 500A that can correspond to a glass substrate 510 may be provided. In some embodiments, the glass substrate 510 may correspond to a glass substrate wafer 210 or a glass substrate panel 220 shown in Figures 2A to 2B.

[0050] As shown in Figure 5B, the structure 500B may be formed by forming a plurality of TGV holes 512 within the glass substrate 510. In some embodiments, the TGV holes 512 may take the form of empty columns or cylinders between the upper surface 514 and the lower surface 516 of the glass substrate 510. In some embodiments, the TGV holes 512 may be formed by mechanical drilling or laser drilling.

[0051] As shown in Figure 5C, structure 500C may be formed on the basis of structure 500B by forming a seed conductive film 522 (indicated by thick lines) on the upper surface 514 and lower surface 516 of the glass substrate 510, and on the side walls of each of the plurality of TGV holes 512. In some embodiments, the seed conductive film 522 may be made of a first conductive material which may include titanium, copper, or a combination thereof. In some embodiments, the seed conductive film 522 may be formed based on a physical vapor disposition (PVD) process.

[0052] As shown in Figure 5D, structure 500D can be formed based on structure 500C by forming a photoresist pattern 524 on the upper surface 514 of the glass substrate 510 and a photoresist pattern 526 on the lower surface 516 of the glass substrate 510. In some embodiments, the photoresist patterns 524 and 526 may cover portions of the seed conductive film 522 on which no additional conductive film is formed. In some embodiments, the photoresist patterns 524 and 526 may cover TGV holes (e.g., TGV holes 512a and 512b) corresponding to the boundary of the AOG die, and / or edges of the glass substrate 510 corresponding to the boundary of the AOG die. Thus, the first seed pattern can be defined based on a first portion of the seed conductive film 522 on the upper surface of the glass substrate 510 (e.g., portions not covered or exposed by the seed conductive film 522). Furthermore, the second seed pattern may be defined based on a second portion of the seed conductive film 522 on the lower surface of the glass substrate 510 (for example, a portion that is not covered by or is exposed by the seed conductive film 522).

[0053] As shown in Figure 5E, structure 500E can be formed based on structure 500D by forming an additional conductive film 532 on a third portion of the seed conductive film on the first seed pattern, on the second seed pattern, and on the sidewalls of the TGV holes 512c. In some embodiments, the additional conductive film 532 can be formed by deposition or plating. In some embodiments, the additional conductive film 532 can be made of a second material containing copper. In some embodiments, the TGV holes 512c can correspond to the TGV structure 142 in Figure 1B, together with the corresponding seed conductive film 522 and the additional conductive film 532 formed on its sidewalls.

[0054] In some embodiments, the first seed pattern and the first portion of the additional conductive film 532 on the first seed pattern may correspond to the conductive structure 132 in Figure 1B. In some embodiments, the conductive structure 132 may be configured as a patch antenna.

[0055] In some embodiments, the second seed pattern and the second portion of the additional conductive film 532 on the second seed pattern may correspond to the conductive structures 122 and 124 in Figure 1B. In some embodiments, the third portion of the seed conductive film on the sidewall of the TGV hole 512c may correspond to the first portion 172a of the first conductive film 172 in Figure 1B, and the third portion of the additional conductive film on the third portion of the seed conductive film on the sidewall of the TGV hole 512c may correspond to the second portion 172b of the first conductive film 172 in Figure 1B. Furthermore, the fourth portion of the seed conductive film on the respective sidewalls of the TGV holes 512a and 512b may correspond to the second conductive film 714 on the recess sidewalls of the multiple metallized recess structures 152 in Figure 1B.

[0056] As shown in Figure 5F, structure 500F can be formed on the base of structure 500E by removing photoresist patterns 524 and 526.

[0057] As shown in Figure 5G, structure 500G can be formed based on structure 500F by forming a photoresist pattern 534 on the upper surface 514 of the glass substrate 510 and a photoresist pattern 536 on the lower surface 516 of the glass substrate 510. In some embodiments, the photoresist patterns 534 and 536 may cover TGV holes (e.g., TGV holes 512a and 512b) corresponding to the boundary of the AOG die, and / or edges of the glass substrate 510 (e.g., edge 538) corresponding to the boundary of the AOG die. In some embodiments, at this stage, portions of the seed conductive film 522 where no additional conductive film has been formed are exposed.

[0058] As shown in Figure 5H, structure 500H can be formed on structure 500G by using photoresist patterns 534 and 536 as masks to remove the exposed portion of the seed conductive film 522. The additional conductive film 532 may be partially removed when removing the exposed portion of the seed conductive film 522, but since the additional conductive film 532 is much thicker than the seed conductive film 522, the desired conductive structure based on the additional conductive film 532 can be removed only slightly without affecting the functionality of the desired conductive structure. In other words, the additional conductive film 532 can function as a mask that can withstand the removal of the exposed portion of the seed conductive film 522, based on its thickness.

[0059] As shown in Figure 5I, structure 500I can be formed on the base of structure 500H by removing photoresist patterns 534 and 536.

[0060] As shown in Figure 5J, structure 500J can be formed on structure 500I by filling the remaining portion of the TGV pore 512c, which is formed on the base of the TGV pore 512c and can correspond to the space within the TGV structure surrounded by the first conductive film on the sidewall of the TGV structure, with a dry film dielectric 542. In some embodiments, the dry film dielectric 542 can correspond to the dry film dielectric 173 in Figure 1B.

[0061] As shown in Figure 5K, a first insulating layer 552 can be formed on the upper surface of the glass substrate 510, covering at least a portion of the first conductive structure on the upper surface, thereby forming structure 500K based on structure 500J. In some embodiments, the first insulating layer 552 may correspond to the first insulating layer 162 in Figure 1B.

[0062] As shown in Figure 5L, a second insulating layer 554 can be formed on the lower surface of the glass substrate 510, covering at least a portion of the second conductive structure on the lower surface, thereby forming structure 500L based on structure 500K. In some embodiments, the second insulating layer 554 may correspond to the second insulating layer 164 in Figure 1B.

[0063] In some embodiments, the first insulating layer 552(162) or the second insulating layer 554(164) may include silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, a silicone-based polymer dielectric, or any combination thereof.

[0064] As shown in Figure 5M, structure 500M can be formed on structure 500L by forming conductive terminal structures 562 and / or other conductive traces or vias to electrically couple conductive structures on the underside of the glass substrate 510 through each opening in the second insulating layer 554. In some embodiments, each of the conductive terminal structures may correspond to a solder bump, a copper pillar bump, or a microball bump. In some embodiments, the conductive terminal structure 562 may correspond to the conductive terminal structures 182 or 184 in Figure 1B.

[0065] As shown in Figure 5N, by performing a flaking process on structure 500M, multiple AOG dies 500Na, 500Nb, and 500Nc can be formed based on structure 500M. Each of the AOG dies 500Na, 500Nb, and 500Nc may correspond to an AOG die 100 and may include corresponding components as shown in Figures 1A to 1E. In some embodiments, the flaking process may be performed by cutting along the boundaries of various AOG dies, indicated as dotted lines 572 and 574, based on laser ablation dicing, saw blade dicing, or scribing and breaking. As shown in Figure 5N and Figures 3B to 3C, after flaking, portions of the seed conductive film 522 remain on the sidewalls and edges 538 of the divided TGV holes 512a and 512b. These remaining portions of the seed conductive film 522 may form metallized recess structures (e.g., metallized recess structure 152) configured to provide EMI shielding.

[0066] Figure 6 shows a method 600 for manufacturing an antenna device (such as the AOG die 100 in Figures 1A-1B, the AOG die 400 in Figure 4, and / or the AOG dies 500Na, 500Nb, and 500Nc in Figure 5N) according to an aspect of the present disclosure. In some aspects, Figures 5A-5N may show structures at various stages of manufacturing an antenna device (e.g., an AOG die) according to method 600.

[0067] In operation 610, a first conductive structure (e.g., conductive structure 132) may be formed on the upper surface of a glass substrate (e.g., glass substrate 110). In some embodiments, the glass substrate may have an upper surface (e.g., upper surface 112), a lower surface (e.g., lower surface 114), and a side portion (e.g., side portion 116) that surrounds the glass substrate and connects the upper and lower surfaces. In some embodiments, the side portion may include a plurality of metallized recess structures (e.g., metallized recess structures 152). In some embodiments, the plurality of metallized recess structures have recess side walls connecting the upper and lower surfaces, and a plurality of second conductive films, each located on the recess side walls of the plurality of metallized recess structures. In some embodiments, each recess side wall of the plurality of metallized recess structures has a shape corresponding to a partial TGV hole.

[0068] In operation 620, a second conductive structure (e.g., conductive structure 122) may be formed on the lower surface of the glass substrate. In some embodiments, a ground conductive structure (e.g., conductive structure 124 and / or ground conductive structure 430) may be formed on the upper surface of the glass substrate, the lower surface of the glass substrate, or any combination thereof. In some embodiments, a plurality of second conductive films are electrically coupled to the ground conductive structure.

[0069] In operation 630, a TGV structure (e.g., TGV structure 142) may be formed, and the TGV structure may include a first conductive film (e.g., conductive film 172) on the sidewalls of the first TGV holes. In some embodiments, the first TGV holes may be defined within a glass substrate and extend from the upper surface of the glass substrate to the lower surface of the glass substrate. In some embodiments, the first conductive film may be configured to bond the first conductive structure to the second conductive structure.

[0070] In some embodiments, Method 600 may further include forming a plurality of TGV holes in a glass substrate, the glass substrate of an antenna device being based on a glass substrate, wherein the plurality of TGV holes include a first TGV hole and a plurality of second TGV holes, forming a plurality of metallized TGV hole structures based on the plurality of second TGV holes, and performing a fragmentation process to separate the antenna device from the glass substrate by cutting through the plurality of metallized TGV hole structures, the remaining portion of the plurality of metallized TGV hole structures becoming a plurality of metallized recess structures on the side of the glass substrate of the antenna device.

[0071] In some embodiments, the method 600 may further include forming a seed conductive film on the upper surface of a glass substrate, on the lower surface of a glass substrate, and on the sidewalls of each of a plurality of TGV holes; defining a first seed pattern based on a first portion of the seed conductive film on the upper surface of a glass substrate; defining a second seed pattern based on a second portion of the seed conductive film on the lower surface of a glass substrate; and forming an additional conductive film on the first seed pattern, the second seed pattern, and a third portion of the seed conductive film on the sidewalls of the first TGV holes.

[0072] In some embodiments, the first seed pattern and the first portion of the additional conductive film on the first seed pattern correspond to the first conductive structure. In some embodiments, the second seed pattern and the second portion of the additional conductive film on the second seed pattern correspond to the second conductive structure. In some embodiments, the first conductive film includes a first portion based on the third portion of the seed conductive film on the sidewall of the first TGV hole, and a second portion based on the third portion of the additional conductive film on the third portion of the seed conductive film on the sidewall of the first TGV hole. In some embodiments, the fourth portion of the seed conductive film on the sidewall of each of the plurality of TGV holes corresponds to a plurality of second conductive films, each located on the recess sidewall of a plurality of metallized recess structures.

[0073] In some embodiments, the seed conductive film may be made of a first material including titanium, copper, or a combination thereof. In some embodiments, the additional conductive film is made of a second material including copper. In some embodiments, method 600 may further include forming a dry film dielectric that fills the space within the TGV structure surrounded by the first conductive film.

[0074] In some embodiments, method 600 may further include forming a first insulating layer on the upper surface to cover at least a portion of the first conductive structure, and forming a second insulating layer on the lower surface to cover at least a portion of the second conductive structure. In some embodiments, the first or second insulating layer may include silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, a silicone-based polymer dielectric, or any combination thereof.

[0075] In some embodiments, method 600 may further include forming a metallization structure beneath a glass substrate, the metallization structure comprising at least a second insulating layer and a second conductive structure. In some embodiments, the metallization structure may further include conductive terminal structures electrically coupled to the second conductive structure through openings in the second insulating layer. In some embodiments, the conductive terminal structures correspond to solder bumps, copper pillar bumps, or microball bumps.

[0076] The technical advantages of Method 600 may correspond to the manufacture of an antenna device (e.g., an AOG die) that includes multiple metallized recess structures formed on the side of a glass substrate of the device. The process for forming the metallized recess structures can be integrated with the process for forming the TGV structure, and thus does not significantly increase the complexity of the manufacturing process. On the other hand, the EMI shielding provided by the metallized recess structures can improve antenna performance (e.g., antenna gain, throughput, and / or bandwidth).

[0077] Figure 7 shows a mobile device 700 according to an aspect of the present disclosure. In some aspects, the mobile device 700 may be implemented by including one or more antenna devices (e.g., AOG dies) as disclosed herein.

[0078] In some embodiments, the mobile device 700 may be configured as a wireless communication device. As shown in the figures, the mobile device 700 includes a processor 701. The processor 701 may be communicatively coupled to a memory 732 via a link which may be a die-to-die link or a chip-to-chip link. The mobile device 700 also includes a display 728 and a display controller 726, the display controller 726 being coupled to the processor 701 and the display 728. The mobile device 700 may include an input device 730 (e.g., a physical keyboard or a virtual keyboard), a power supply 744 (e.g., a battery), a speaker 736, a microphone 738, and a wireless antenna 742 (which may incorporate an antenna device (e.g., an AOG die) in various embodiments described herein). In some embodiments, the power supply 744 may directly or indirectly provide supply voltage to operate some or all of the components of the mobile device 700.

[0079] In some embodiments, Figure 7 may include a coder / decoder (CODEC) 734 (e.g., an audio and / or voice codec) coupled to a processor 701, a speaker 736 and a microphone 738 coupled to the codec 734, a wireless antenna 742, and a wireless circuit 740 (which may include a modem, RF circuit configuration, filters, etc.) coupled to the processor 701. In some embodiments, one or more of the processor 701 (e.g., a SoC, application processor (AP)), a display controller 726, a memory 732, a codec 734, and a wireless circuit 740 (e.g., a baseband interface) include an IC device packaged as an IC package.

[0080] Figure 7 shows a mobile device 700, but the same structure may be used to implement devices including set-top boxes, music players, video players, entertainment units, navigation devices, personal digital assistants (PDAs), stationary data units, computers, laptops, tablets, communication devices, mobile phones, or other similar devices.

[0081] Figure 8 shows various electrical devices that may incorporate the antenna devices described herein, according to embodiments of this disclosure. For example, electrical devices mounted on a mobile phone device 810, a laptop computer device 820, a stationary terminal device 830, a wearable device 840, or an automatic vehicle 850 may each include antenna devices 812, 822, 832, 842, and 852 (corresponding to the AOG dies based on the examples described above with reference to Figures 1 to 7, for example). The devices 810, 820, 830, and 840 and the vehicle 850 shown in Figure 8 are merely examples. Other devices or apparatus that may feature the antenna apparatus described herein may include, but are not limited to, a group of devices including mobile devices, hand-held personal communication system (PCS) units, portable data units such as personal digital assistants, global positioning system (GPS) devices, navigation devices, set-top boxes, music players, video players, entertainment units, stationary data units such as meter reading devices, communication devices, smartphones, tablet computers, computers, wearable devices (e.g., watches, glasses), Internet of Things (IoT) devices, servers, routers, electrical devices implemented in automatic vehicles (e.g., autonomous vehicles), or any other devices that store or retrieve data or computer instructions, or any combination thereof.

[0082] In the detailed explanation above, it will be seen that in the examples, different features are grouped together. This manner of disclosure should not be understood as an intention that the exemplary clauses have more features than are explicitly stated within each clause. Rather, the various aspects of this disclosure may contain fewer features than all the features of the individual exemplary clauses disclosed. Accordingly, the following clauses should be considered incorporated into the explanation, and each clause may be valid on its own as a separate example. Each dependent clause may refer within itself to a specific combination with one of the other clauses, but the aspects (singular or plural) of that dependent clause are not limited to that specific combination. It will be understood that other exemplary clauses may also include combinations of aspects (singular or plural) of dependent clauses with the subject matter of any other dependent or independent clause, or any combination of features with other dependent and independent clauses. The various aspects disclosed herein explicitly include certain combinations (e.g., contradictory aspects such as defining an element as both an electrical insulator and an electrical conductor) unless it is explicitly stated or easily inferred that such combinations are not intended. Furthermore, even if a clause is not directly subordinate to an independent clause, it is intended that the nature of the clause may be included in any other independent clause.

[0083] Implementation examples are described in the following numbered sections.

[0084] Clause 1. An antenna device comprising a glass substrate having an upper surface, a lower surface, and a side portion surrounding the glass substrate and connecting the upper surface and the lower surface; a first conductive structure on the upper surface of the glass substrate; a second conductive structure on the lower surface of the glass substrate; and a TGV structure including a first conductive film on the side wall of a first through-glass via (TGV) hole, wherein the first TGV hole is defined within the glass substrate, extends from the upper surface to the lower surface of the glass substrate, and the first conductive film is configured to bond the first conductive structure to the second conductive structure; the side portion includes a plurality of metallized recess structures, each of which has a recess side wall connecting the upper surface and the lower surface, and a plurality of second conductive films on the recess side walls of the plurality of metallized recess structures, and each recess side wall of the plurality of metallized recess structures has a shape corresponding to a partial TGV hole.

[0085] Clause 2. The antenna apparatus according to Clause 1, wherein the thickness of the first conductive film is greater than the thickness of multiple second conductive films.

[0086] Clause 3. The antenna device according to either Clause 1 or 2, further comprising a ground conductive structure on the upper surface of a glass substrate, the lower surface of a glass substrate, or any combination thereof, wherein a plurality of second conductive films are electrically coupled to the ground conductive structure.

[0087] Clause 4. An antenna device according to any one of Clauses 1 to 3, wherein a plurality of second conductive films are made of a first material, and the first conductive film includes a first portion and a second portion, the first portion being located between the side wall of a first TGV hole and the second portion, the first portion being made of a first material and the second portion being made of a second material.

[0088] Clause 5. The antenna device described in Clause 4, wherein the first material comprises titanium, copper, or a combination thereof, and the second material comprises copper.

[0089] Clause 6. An antenna device according to either Clause 4 or 5, wherein the first conductive structure or the second conductive structure includes at least a third part made of the first material and a fourth part made of the second material.

[0090] Clause 7. The antenna device according to any one of Clauses 1 to 6, further comprising a first insulating layer disposed on the upper surface and covering at least a portion of the first conductive structure, and a second insulating layer disposed on the lower surface and covering at least a portion of the second conductive structure.

[0091] Clause 8. The antenna apparatus according to Clause 7, wherein the first or second insulating layer comprises silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, a silicone-based polymer dielectric, or any combination thereof.

[0092] Clause 9. An antenna device according to either Clause 7 or 8, further comprising a metallization structure beneath a glass substrate, wherein the metallization structure comprises at least a second insulating layer and a second conductive structure, and the metallization structure further comprises a conductive terminal structure electrically coupled to the second conductive structure through an opening in the second insulating layer.

[0093] Clause 10. The antenna device according to Clause 9, wherein the conductive terminal structure corresponds to a solder bump, a copper pillar bump, or a microball bump.

[0094] Clause 11. An antenna apparatus according to any one of Clauses 1 to 10, further comprising a dry film dielectric filling the space within the TGV structure surrounded by the first conductive film.

[0095] Clause 12. An antenna device according to any of Clauses 1 to 11, wherein the first conductive structure is configured as a patch antenna.

[0096] Clause 13. A method for manufacturing an antenna device, comprising: forming a first conductive structure on the upper surface of a glass substrate having an upper surface, a lower surface, and a side portion surrounding the glass substrate and connecting the upper surface and the lower surface; forming a second conductive structure on the lower surface of the glass substrate; and forming a TGV structure including a first conductive film on the side wall of a first through-glass via (TGV) hole, wherein the first TGV hole is defined within the glass substrate, extends from the upper surface to the lower surface of the glass substrate, and the first conductive film is configured to bond the first conductive structure to the second conductive structure; the side portion includes a plurality of metallized recess structures, each having a recess side wall connecting the upper surface and the lower surface, and each of the plurality of second conductive films located on the recess side wall of the plurality of metallized recess structures, wherein each recess side wall of the plurality of metallized recess structures has a shape corresponding to a partial TGV hole.

[0097] Clause 14. The method according to Clause 13, further comprising forming a ground conductive structure on the upper surface of a glass substrate, the lower surface of a glass substrate, or any combination thereof, wherein a plurality of second conductive films are electrically coupled to the ground conductive structure.

[0098] Clause 15. A method for separating an antenna device from a glass substrate, comprising: a glass substrate corresponding to a glass substrate wafer or glass substrate panel, wherein the glass substrate of an antenna device is based on the glass substrate, and further comprising: forming a plurality of TGV holes in the glass substrate, wherein the plurality of TGV holes include a first TGV hole and a plurality of second TGV holes; forming a plurality of metallized TGV hole structures based on the plurality of second TGV holes; and performing a fragmentation process for separating the antenna device from the glass substrate by cutting through the plurality of metallized TGV hole structures, wherein the remaining portion of the plurality of metallized TGV hole structures becomes a plurality of metallized recess structures on the side of the glass substrate of the antenna device.

[0099] Clause 16. Further comprising forming a seed conductive film on the upper surface of a glass substrate, on the lower surface of a glass substrate, and on the sidewalls of each of a plurality of TGV holes; defining a first seed pattern based on a first portion of the seed conductive film on the upper surface of a glass substrate; defining a second seed pattern based on a second portion of the seed conductive film on the lower surface of a glass substrate; and forming an additional conductive film on the first seed pattern, on the second seed pattern, and on a third portion of the seed conductive film on the sidewalls of the first TGV holes, wherein the first seed pattern and the first seed pattern The method according to Clause 15, wherein a first portion of the additional conductive film corresponds to a first conductive structure, a second seed pattern and a second portion of the additional conductive film on the second seed pattern correspond to a second conductive structure, the first conductive film includes a first portion based on a third portion of the seed conductive film on the sidewall of a first TGV hole and a second portion based on a third portion of the additional conductive film on the third portion of the seed conductive film on the sidewall of a first TGV hole, and a fourth portion of the seed conductive film on the sidewall of each of the plurality of TGV holes corresponds to a plurality of second conductive films, each located on the recess sidewall of a plurality of metallized recess structures.

[0100] Clause 17. The method according to Clause 16, wherein the seed conductive film is made of a first material comprising titanium, copper, or a combination thereof, and the additional conductive film is made of a second material comprising copper.

[0101] Clause 18. The method according to any one of Clauses 13 to 17, further comprising forming a first insulating layer on the upper surface to cover at least a portion of the first conductive structure, and forming a second insulating layer on the lower surface to cover at least a portion of the second conductive structure.

[0102] Clause 19. The method according to Clause 18, wherein the first or second insulating layer comprises silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, a silicone-based polymer dielectric, or any combination thereof.

[0103] Clause 20. The method according to either Clause 18 or 19, further comprising forming a metallization structure beneath a glass substrate, wherein the metallization structure comprises at least a second insulating layer and a second conductive structure, and the metallization structure further comprises a conductive terminal structure electrically coupled to the second conductive structure through an opening in the second insulating layer.

[0104] Clause 21. The method according to Clause 20, wherein the conductive terminal structure corresponds to a solder bump, a copper pillar bump, or a microball bump.

[0105] Clause 22. The method according to any one of Clauses 13 to 21, further comprising forming a dry film dielectric that fills the space within the TGV structure surrounded by the first conductive film.

[0106] Clause 23. The method according to any one of Clauses 13 to 22, wherein the first conductive structure is configured as a patch antenna.

[0107] Clause 24. An electrical device comprising one or more processors and an antenna device coupled to one or more processors, wherein the antenna device comprises a glass substrate having an upper surface, a lower surface, and sides enclosing the glass substrate and connecting the upper and lower surfaces; a first conductive structure on the upper surface of the glass substrate; a second conductive structure on the lower surface of the glass substrate; and a TGV structure including a first conductive film on the sidewall of a first through-glass via (TGV) hole, wherein the first TGV hole is defined within the glass substrate and extends from the upper surface to the lower surface of the glass substrate, and the first conductive film is configured to bond the first conductive structure to the second conductive structure, and the sidewall includes a plurality of metallized recess structures, each having a recess sidewall connecting the upper and lower surfaces, and each of the plurality of second conductive films on the recess sidewalls of the plurality of metallized recess structures, wherein each recess sidewall of the plurality of metallized recess structures has a shape corresponding to a partial TGV hole.

[0108] Clause 25. The electrical device described in Clause 24, wherein the thickness of the first conductive film is greater than the thickness of multiple second conductive films.

[0109] Clause 26. The electrical device according to Clause 24 or 25, wherein the antenna device further comprises a ground conductive structure on the upper surface of a glass substrate, the lower surface of a glass substrate, or any combination thereof, and a plurality of second conductive films are electrically coupled to the ground conductive structure.

[0110] Clause 27. An electrical device according to any of Clauses 24 to 26, wherein a plurality of second conductive films are made of a first material, and the first conductive film comprises a first portion and a second portion, the first portion being located between the side wall of a first TGV hole and the second portion, the first portion being made of a first material and the second portion being made of a second material.

[0111] Clause 28. An electrical device as described in Clause 27, wherein the first material comprises titanium, copper, or a combination thereof, and the second material comprises copper.

[0112] Clause 29. An electrical device according to either Clause 27 or 28, wherein the first conductive structure or the second conductive structure includes at least a first part made of the first material and a second part made of the second material.

[0113] Clause 30. An electrical device according to any one of Clauses 24 to 29, wherein the antenna device further comprises a first insulating layer disposed on the upper surface and covering at least a portion of the first conductive structure, and a second insulating layer disposed on the lower surface and covering at least a portion of the second conductive structure.

[0114] Clause 31. The electrical device according to Clause 30, wherein the first or second insulating layer comprises silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, a silicone-based polymer dielectric, or any combination thereof.

[0115] Clause 32. An electrical device according to either Clause 30 or 31, wherein the antenna device further comprises a metallization structure beneath a glass substrate, the metallization structure comprising at least a second insulating layer and a second conductive structure, and the metallization structure further comprises a conductive terminal structure electrically coupled to the second conductive structure through an opening in the second insulating layer.

[0116] Clause 33. An electrical device as described in Clause 32, wherein the conductive terminal structure corresponds to a solder bump, a copper pillar bump, or a microball bump.

[0117] Clause 34. An electrical device according to any one of Clauses 24 to 33, wherein the antenna device further comprises a dry film dielectric filling the space within the TGV structure surrounded by a first conductive film.

[0118] Clause 35. An electrical device according to any of Clauses 24 to 34, wherein the first conductive structure is configured as a patch antenna.

[0119] Clause 36. An electrical device as described in any of Clauses 24 to 35, which includes at least one of the following: a music player, video player, entertainment unit, navigation device, communication device, mobile device, mobile phone, smartphone, personal digital assistant, stationary terminal, tablet computer, computer, wearable device, laptop computer, server, Internet of Things (IoT) device, and device in an Automobile Vehicle.

[0120] Those skilled in the art will understand that information and signals can be represented using any of a variety of different techniques and methods. For example, data, instructions, commands, information, signals, bits, symbols, and chips, which may be mentioned throughout the above description, can be represented by voltage, electric current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof.

[0121] Furthermore, those skilled in the art will understand that various exemplary logic blocks, modules, circuits, and algorithmic steps described in relation to the embodiments disclosed herein can be implemented as electronic hardware, computer software, or a combination of both. To clearly demonstrate this hardware-software compatibility, various exemplary components, blocks, modules, circuits, and steps have been outlined above in terms of their functionality. Whether such functionality is implemented as hardware or executed as software depends on the specific application and the design constraints imposed on the overall system. Those skilled in the art may implement the described functionality in various ways for specific applications, but such implementation decisions should not be construed as causing a departure from the scope of this disclosure.

[0122] Various exemplary logic blocks, modules, and circuits described in relation to the embodiments disclosed herein may be implemented or run using general-purpose processors, DSPs, ASICs, FPGAs or other programmable logic devices, individual gate or transistor logic, individual hardware components, or any combination thereof designed to perform the functions described herein. A general-purpose processor may be a microprocessor, but alternatively, the processor may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, for example, a combination of a DSP and a microprocessor, multiple microprocessors, one or more microprocessors in conjunction with a DSP core, or any other such configuration.

[0123] The methods, sequences, and / or algorithms described in relation to the embodiments disclosed herein may be embodied in hardware directly, in software modules executed by a processor, or in a combination of the two. The software modules may reside in random access memory (RAM), flash memory, read-only memory (ROM), erasable programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), registers, hard disks, removable disks, CD-ROMs, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor so that the processor can read information from and write information to the storage medium. Alternatively, the storage medium may be integrated with the processor. The processor and storage medium may reside in an ASIC. The ASIC may reside in a user terminal (e.g., a UE). Alternatively, the processor and storage medium may reside in the user terminal as separate components.

[0124] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software, the functions may be stored on or transmitted via computer-readable media as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any media that facilitate the transfer of computer programs from one location to another. Storage media may be any available media accessible by a computer. Such computer-readable media, but not limited to examples, may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other media accessible by a computer that can be used to carry or store desired program code in the form of instructions or data structures. Furthermore, any connection may appropriately be referred to as computer-readable media. For example, if software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of a medium. As used herein, disk and disc include compact disc (CD), laser disc (disc), optical disc (disc), digital versatile disc (DVD), floppy disk (disk), and Blu-ray® disc (disc), where a disk typically reproduces data magnetically, and a disc (disc) reproduces data optically using a laser. Combinations of the above should also be considered within the scope of computer-readable media.

[0125] While the above disclosures illustrate exemplary aspects of the Disclosure, it should be noted that various changes and modifications can be made to this Specified without departing from the scope of the Disclosure as defined by the appended claims. For example, the functions, steps, and / or actions of the method claims in the aspects of the Disclosure described herein do not need to be performed in any particular order. Furthermore, no part, function, action, or instruction described herein or in the claims should be construed as essential or indispensable unless expressly stated otherwise. In addition, as used herein, terms such as “set,” “group,” etc., are intended to include one or more of the elements described. Also, as used herein, terms such as “has,” “have,” “having,” “comprises,” “comprising,” “includes,” and “including” do not exclude the presence of one or more additional elements (for example, an element that “has” A may also have B). Furthermore, the phrase “based on,” is intended to mean “at least partially based on,” unless otherwise specified. Furthermore, as used herein, the term “or” is intended to be inclusive when used in relation to a set of elements, and may be used interchangeably with “and / or” unless otherwise specified (e.g., when used in combination with “either” or “only one of”) or unless the choices are mutually exclusive (e.g., “one or more” should not be interpreted as “one and more”). Moreover, parts, functions, actions, and instructions may be described or claimed in the singular, but the plural is intended unless it is explicitly stated that they are limited to the singular. Thus, as used herein, the articles “a,” “an,” “the,” and “said” are intended to include one or more of the elements described.In addition, as used herein, the terms “at least one” and “one or more” also include “one” part, function, action, or instruction that performs or can perform the described or claimed functionality, as well as “two or more” parts, functions, actions, or instructions that perform or can perform the described or claimed functionality.

Claims

1. A glass substrate having an upper surface, a lower surface, and side portions that surround the glass substrate and connect the upper surface and the lower surface, The first conductive structure on the upper surface of the glass substrate, The second conductive structure on the lower surface of the glass substrate, A TGV structure comprising a first conductive film on the side wall of a first through-glass via (TGV) hole, The first TGV hole is defined within the glass substrate and extends from the upper surface of the glass substrate to the lower surface of the glass substrate. The first conductive film comprises a TGV structure configured to bond the first conductive structure to the second conductive structure, The side portion includes a plurality of metallized recess structures, each of which has a recess side wall connecting the upper surface and the lower surface, and a plurality of second conductive films located on the recess side walls of the plurality of metallized recess structures, and each recess side wall of the plurality of metallized recess structures has a shape corresponding to a partial TGV hole. Antenna device.

2. The antenna device according to claim 1, wherein the thickness of the first conductive film is greater than the thickness of the plurality of second conductive films.

3. The grounding conductive structure further comprises the upper surface of the glass substrate, the lower surface of the glass substrate, or any combination thereof, The plurality of second conductive films are electrically coupled to the ground conductive structure. The antenna device according to claim 1.

4. The plurality of second conductive films are made of the first material. The first conductive film includes a first portion and a second portion, the first portion being located between the side wall of the first TGV hole and the second portion. The first part is made of the first material, The aforementioned second part is made of the second material. The antenna device according to claim 1.

5. The material 1 comprises titanium, copper, or a combination thereof. The second material contains copper, The antenna device according to claim 4.

6. The antenna device according to claim 4, wherein the first conductive structure or the second conductive structure includes at least a third portion made of the first material and a fourth portion made of the second material.

7. A first insulating layer disposed on the upper surface and covering at least a portion of the first conductive structure, The system further comprises a second insulating layer disposed on the lower surface and covering at least a portion of the second conductive structure, The antenna device according to claim 1.

8. The antenna device according to claim 7, wherein the first insulating layer or the second insulating layer comprises silicon dioxide, an organic polymer dielectric, polyimide, polynorbornene, benzocyclobutene, polytetrafluoroethylene, a silicone-based polymer dielectric, or any combination thereof.

9. The glass substrate further comprises a metallization structure, wherein the metallization structure includes at least the second insulating layer and the second conductive structure. The metallization structure further includes a conductive terminal structure electrically coupled to the second conductive structure through an opening in the second insulating layer. The antenna device according to claim 7.

10. The antenna device according to claim 9, wherein the conductive terminal structure corresponds to a solder bump, a copper pillar bump, or a microball bump.

11. The antenna device according to claim 1, further comprising a dry film dielectric that fills the space within the TGV structure surrounded by the first conductive film.

12. The antenna device according to claim 1, wherein the first conductive structure is configured as a patch antenna.

13. A method for manufacturing an antenna device, The first conductive structure is formed on the upper surface of a glass substrate, wherein the glass substrate has an upper surface, a lower surface, and side portions that surround the glass substrate and connect the upper surface and the lower surface. A second conductive structure is formed on the lower surface of the glass substrate, The method involves forming a TGV structure including a first conductive film on the side wall of a first through-glass via (TGV) hole, The first TGV hole is defined within the glass substrate and extends from the upper surface of the glass substrate to the lower surface of the glass substrate. The first conductive film is configured to form a TGV structure such that it bonds the first conductive structure to the second conductive structure, The side portion includes a plurality of metallized recess structures, each of which has a recess side wall connecting the upper surface and the lower surface, and a plurality of second conductive films located on the recess side walls of the plurality of metallized recess structures, and each recess side wall of the plurality of metallized recess structures has a shape corresponding to a partial TGV hole. method.

14. The method further includes forming a grounding conductive structure on the upper surface of the glass substrate, the lower surface of the glass substrate, or any combination thereof. The plurality of second conductive films are electrically coupled to the ground conductive structure. The method according to claim 13.

15. The invention involves forming a plurality of TGV holes in a glass substrate wafer or glass substrate panel, wherein the plurality of TGV holes include the first TGV hole and a plurality of second TGV holes, and the glass substrate of the antenna device is based on the glass substrate, and the plurality of TGV holes are formed accordingly. Forming multiple metallized TGV pore structures based on the aforementioned multiple second TGV pores, A method further comprising performing a fragmentation process for separating the antenna device from the glass substrate by cutting through the plurality of metallized TGV hole structures, wherein the remaining portion of the plurality of metallized TGV hole structures becomes the plurality of metallized recess structures on the side of the glass substrate of the antenna device. The method according to claim 13.

16. A seed conductive film is formed on the upper surface of the glass substrate, on the lower surface of the glass substrate, and on the side walls of each of the plurality of TGV holes. A first seed pattern is defined based on the first portion of the seed conductive film on the upper surface of the glass substrate, A second seed pattern is defined based on the second portion of the seed conductive film on the lower surface of the glass substrate, The method further includes forming an additional conductive film on the first seed pattern, on the second seed pattern, and on a third portion of the seed conductive film on the side wall of the first TGV hole, The first seed pattern and the first portion of the additional conductive film on the first seed pattern correspond to the first conductive structure, The second seed pattern and the second portion of the additional conductive film on the second seed pattern correspond to the second conductive structure, The first conductive film includes a first portion based on the third portion of the seed conductive film on the side wall of the first TGV hole, and a second portion based on the third portion of the additional conductive film on the third portion of the seed conductive film on the side wall of the first TGV hole, The fourth portion of the seed conductive film on the side wall of each of the plurality of TGV holes corresponds to the plurality of second conductive films located on the side walls of the recesses of the plurality of metallized recess structures. The method according to claim 15.

17. One or more processors, The system comprises an antenna device coupled to one or more of the aforementioned processors, The aforementioned antenna device A glass substrate having an upper surface, a lower surface, and side portions that surround the glass substrate and connect the upper surface and the lower surface, The first conductive structure on the upper surface of the glass substrate, The second conductive structure on the lower surface of the glass substrate, A TGV structure comprising a first conductive film on the side wall of a first through-glass via (TGV) hole, The first TGV hole is defined within the glass substrate and extends from the upper surface of the glass substrate to the lower surface of the glass substrate. The first conductive film comprises a TGV structure configured to bond the first conductive structure to the second conductive structure, The side portion includes a plurality of metallized recess structures, each of which has a recess side wall connecting the upper surface and the lower surface, and a plurality of second conductive films located on the recess side walls of the plurality of metallized recess structures, and each recess side wall of the plurality of metallized recess structures has a shape corresponding to a partial TGV hole. Electrical devices.

18. The electrical device according to claim 17, wherein the thickness of the first conductive film is greater than the thickness of the plurality of second conductive films.

19. The aforementioned antenna device The grounding conductive structure further comprises the upper surface of the glass substrate, the lower surface of the glass substrate, or any combination thereof, The plurality of second conductive films are electrically coupled to the ground conductive structure. The electrical device according to claim 17.

20. The electrical device according to claim 17, wherein the electrical device includes at least one of the following: a music player, a video player, an entertainment unit, a navigation device, a communication device, a mobile device, a mobile phone, a smartphone, a personal digital assistant, a stationary terminal, a tablet computer, a computer, a wearable device, a laptop computer, a server, an Internet of Things (IoT) device, and a device in an automatic vehicle.

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