RF pulse-assisted tungsten-containing film deposition

Abstract

An exemplary semiconductor processing method may include providing one or more deposition precursors in a processing area of ​​a semiconductor processing chamber. The deposition precursors may be tungsten-containing precursors or may include tungsten-containing precursors. A substrate may be placed within the processing area of ​​the semiconductor processing chamber. The method may include forming a plasma of one or more deposition precursors within the processing area. The plasma may be at least partially formed by RF power operating at about 3,000 W or less and at a pulse frequency of about 100,000 Hz or less. The method may include forming a layer of material on the substrate. The material layer may be a tungsten-containing material or may include tungsten-containing material.

Description

Technical Field

[0001] Cross - reference to Related Applications

[0001] This application claims the benefit and priority of U.S. Patent Application No. 18 / 128,049, filed on March 29, 2023, entitled "RF PULSING ASSISTED TUNGSTEN - CONTAINING FILM DEPOSITION", the entire disclosure of which is hereby incorporated by reference herein.

[0002] Technical Field

[0002] This technology relates to deposition processes and chambers. More particularly, this technology relates to a method of manufacturing tungsten - containing films using RF pulses during deposition.

Background Art

[0003] Background

[0003] Integrated circuits are enabled by processes that create complex patterned layers of material on a substrate surface. Manufacturing patterned material on a substrate requires a controlled method for forming and removing the material. The properties of the material can affect how the device operates and also how one film is removed relative to another. Plasma - enhanced deposition can produce films with specific properties. Many of the films formed require additional processing to adjust or enhance the material properties of the film to provide appropriate properties.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to manufacture high - quality devices and structures. These needs and others are addressed by this technology.

Summary of the Invention

[0005] Summary

[0005] An exemplary semiconductor processing method may include providing one or more deposition precursors in a processing area of ​​a semiconductor processing chamber. The deposition precursors may be tungsten-containing precursors or may include tungsten-containing precursors. A substrate may be placed in the processing area of ​​the semiconductor processing chamber. The method may include forming a plasma of one or more deposition precursors in the processing area. The plasma may be at least partially formed by RF power operating at about 3,000 W or less and at a pulse frequency of about 100,000 Hz or less. The method may include forming a layer of material on the substrate. The material layer may be a tungsten-containing material or may include tungsten-containing material.

[0006]

[0006] In some embodiments, the tungsten-containing precursor is or may contain tungsten hexafluoride (WF6). During the formation of the material layer on the substrate, the temperature in the semiconductor processing chamber can be maintained at about 800°C or less. During the formation of the material layer on the substrate, the pressure in the semiconductor processing chamber can be maintained at about 75 Torr or less. One or more deposition precursors may further contain a carbon-containing precursor. The material layer may be a tungsten-carbon-containing material. The carbon-containing precursor is or may contain a hydrocarbon. The carbon-containing precursor is or may contain propene (C3H6). The plasma can be at least partially formed by RF power operating with a duty cycle between about 10% and 90%. The material layer can be characterized by an extinction coefficient of about 2.5 or more at 633 nm. The material layer can be characterized by an average surface roughness (Ra) of about 0.7 nm or less. The material layer can be characterized by a tungsten content of approximately 30 at.% or more. The material layer can also be characterized by a stress of approximately 200 MPa or more.

[0007]

[0007] Some embodiments of the present technology may encompass semiconductor processing methods. The method may include supplying tungsten-containing precursors and carbon-containing precursors to a processing area of ​​a semiconductor processing chamber. A substrate may be placed within the processing area of ​​the semiconductor processing chamber. The method may include forming a plasma of the tungsten-containing precursors and carbon-containing precursors within the processing area. The plasma may be at least partially formed by RF power operating between about 500 W and about 2,000 W, with a pulse frequency of about 10,000 Hz or less, and a duty cycle between about 10% and 90%. The method may include forming a layer of material on the substrate. The material layer may be or may contain a tungsten-containing material. The material layer may be characterized by a tungsten content of about 30 at.% or more. The material layer may be characterized by an average surface roughness (Ra) of about 0.7 nm or less.

[0008]

[0008] In some embodiments, the tungsten-containing precursor may be tungsten hexafluoride (WF6) or contain tungsten hexafluoride (WF6). The carbon-containing precursor may be propene (C3H6) or contain propene (C3H6). During the formation of the material layer on the substrate, the temperature inside the semiconductor processing chamber can be maintained at about 700°C or less. During the formation of the material layer on the substrate, the pressure inside the semiconductor processing chamber can be maintained at about 60 Torr or less. The method may further include providing a boron-containing precursor, along with the tungsten-containing precursor and the carbon-containing precursor, to the processing area of ​​the semiconductor processing chamber. The material layer can be characterized by a stress of about 250 MPa or more.

[0009]

[0009] Some embodiments of the present technology may encompass semiconductor processing methods. The method may include supplying tungsten-containing precursors and carbon-containing precursors to a processing area of ​​a semiconductor processing chamber. A substrate may be placed within the processing area of ​​the semiconductor processing chamber. The method may include forming a plasma of the tungsten-containing precursors and carbon-containing precursors within the processing area. The plasma may be formed at least partially by RF power operating with a pulse frequency of about 10,000 Hz or less and a duty cycle between about 10% and 90%. The method may include forming a material layer containing the tungsten-containing material on the substrate. The material layer may be characterized by a tungsten content of about 30 at.% or more. The material layer may be characterized by an average surface roughness (Ra) of about 0.7 nm or less. The material layer may be characterized by an extinction coefficient of about 2.5 or more at 633 nm.

[0010]

[0010] In some embodiments, the plasma is at least partially formed by RF power operating at a pulse frequency of about 500 W or more, about 1,000 Hz or more and about 8,000 Hz or less. The method may further include providing a boron-containing precursor, together with a tungsten-containing precursor and a carbon-containing precursor, to the processing area of ​​a semiconductor processing chamber.

[0011]

[0011] Such technologies can offer many advantages over conventional systems and techniques. For example, pulsing the RF power can improve the deposition characteristics. More specifically, pulsing the RF power during the deposition operation increases the ion density in the plasma, which can result in desirable mechanical properties for the material. These mechanical properties may include increased stress and an increased extinction coefficient while maintaining the mean surface roughness (Ra). These numerous advantages and features, along with these embodiments and other embodiments, will be described in more detail below in conjunction with the accompanying drawings. [Brief explanation of the drawing]

[0012]

[0012] The nature and advantages of the disclosed technology will be further understood by referring to the remainder of the specification and the drawings.

[0013] [Figure 1]

[0013] This is a top view of an exemplary processing system according to some embodiments of the present technology. [Figure 2]

[0014] This is a schematic cross-sectional view of an exemplary plasma system according to several embodiments of this technology. [Figure 3]

[0015] The operation of an exemplary method for semiconductor processing according to several embodiments of this technology is shown.

[0014]

[0016] Some of the figures are presented as schematic diagrams. These diagrams are for illustrative purposes only and should not be considered to scale unless explicitly stated otherwise. Furthermore, as schematic diagrams, they are provided to aid understanding and may not include all aspects or information compared to a realistic depiction, and may include exaggerated material for illustrative purposes.

[0015]

[0017] In the attached diagrams, similar components and / or features may have the same reference label. Furthermore, various components of the same type can be distinguished according to their reference designation by letters that distinguish similar components from each other. Where only the first reference designation is used herein, the description is applicable to any of the similar components having the same first reference designation, regardless of the letters. [Modes for carrying out the invention]

[0016] Detailed explanation

[0018] Plasma-enhanced deposition (PAD) can accelerate film formation on a substrate by applying energy to one or more constituent precursors. It can generate any number of material films, such as conductive films, dielectric films, and films that facilitate the transfer and removal of materials like hard mask films, for developing semiconductor structures. Conventional hard mask films can be deposited by continuously applying RF power. However, this process can sometimes produce films with undesirable mechanical properties.

[0017]

[0019] This technology overcomes these problems by performing the deposition process while pulsing RF power during film deposition. Many plasma processes for depositing hard mask films are performed with low plasma power and continuous RF power, which generates an ion density that can affect the material properties of the deposited material. In this embodiment, the RF power is pulsed with a higher plasma power than conventional methods during deposition, increasing the ion density of the plasma. By increasing the ion density of the plasma, the deposited material can be denser than material deposited with continuous RF power. This allows for a favorable improvement in the desired mechanical properties of the material while substantially maintaining the roughness characteristics of the film. The fabricated film has higher tensile strength and extinction coefficient compared to conventional techniques, and the metal content in the deposited film can also be increased.

[0018]

[0020] While the remaining disclosure routinely identifies specific deposition processes that utilize the disclosed technology, it will be readily apparent that the systems and methods are equally applicable to other deposition chambers, as well as to processes that may occur in the chambers described. Therefore, the technology should not be considered limited to use with these specific deposition processes or chambers alone. Before describing additional details of embodiments of the technology, this disclosure describes one possible system and chamber that can be used to perform a deposition process according to an embodiment of the technology.

[0019]

[0021] Figure 1 shows a plan view of one embodiment of a deposition, etching, firing, and curing chamber processing system 100 according to an embodiment. In the figure, a pair of forward-opening unified pods 102 are received by a robotic arm 104 and supplied with substrates of various sizes to be placed in a low-pressure holding area 106 before being placed in one of the substrate processing chambers 108a-108f, which are positioned in tandem sections 109a-109c. A second robotic arm 110 may be used to transfer substrate wafers from the holding area 106 to and from the substrate processing chambers 108a-108f. Each substrate processing chamber 108a-108f can be equipped to perform several substrate processing operations, including the formation of stacks of semiconductor materials as described herein, in addition to other substrate processes including plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, and annealing, ashing, etc.

[0020]

[0022] The substrate processing chambers 108a-108f may include one or more system components for depositing, annealing, curing, and / or etching dielectric, hard mask, or other films on a substrate. In one configuration, two pairs of processing chambers (e.g., 108c-108d and 108e-108f) may be used to deposit dielectric or hard mask material onto the substrate, and a third pair of processing chambers (e.g., 108a-108b) may be used to etch the pattern of the deposited dielectric or hard mask. In another configuration, all three pairs of chambers (e.g., 108a-108f) may be configured to deposit alternating laminates of dielectric or hard mask films on the substrate. One or more of the described processes may be performed in a chamber separated from the manufacturing system as shown in various embodiments. Additional configurations of deposition chambers, etching chambers, annealing chambers, and curing chambers for dielectric or hard mask films will be understood as being intended by system 100.

[0021]

[0023] FIG. 2 shows a schematic cross-sectional view of an exemplary plasma system 200 according to some embodiments of the present technology. The plasma system 200 shows a pair of processing chambers 108 that can be attached to one or more of the tandem sections 109 described above, and the processing chambers 108 include lid stack components according to embodiments of the present technology, which will be further described below. The plasma system 200 generally may include a chamber body 202 having side walls 212, a bottom wall 216, and internal side walls 201 that define a pair of processing regions 220A and 220B. Each of the processing regions 220A - 220B may be similarly configured and may include the same components.

[0022]

[0024] For example, the components of the processing region 220B may be included in the processing region 220A, and the processing region may include a pedestal 228 disposed through a passage 222 formed in the bottom wall 216 of the plasma system 200. The pedestal 228 may provide a heater adapted to support a substrate 229 on the exposed surface of the pedestal, such as a body portion. The pedestal 228 may include a heating element 232, for example, a resistive heating element, which may heat and control the substrate temperature at a desired processing temperature. The pedestal 228 may be heated by a remote heating element such as a lamp assembly, or other heating devices.

[0023]

[0025] The body of the pedestal 228 can be connected to the stem 226 by a flange 233. The stem 226 can electrically connect the pedestal 228 to a power output or power box 203. The power box 203 can include a drive system that controls the raising and movement of the pedestal 228 within the processing area 220B. The stem 226 can also include a power interface for supplying power to the pedestal 228. The power box 203 can also include an interface for power and temperature indicators, such as a thermocouple interface. The stem 226 can include a base assembly 238 adapted to removably connect to the power box 203. A circumferential ring 235 is shown on top of the power box 203. In some embodiments, the circumferential ring 235 can be a shoulder adapted as a mechanical stop or land configured to provide a mechanical interface between the base assembly 238 and the upper surface of the power box 203.

[0024]

[0026] The rod 230 may be included through a passage 224 formed in the bottom wall 216 of the processing area 220B and can also be used to position a substrate lift pin 261 disposed through the body of the pedestal 228. The substrate lift pin 261 can selectively space the substrate 229 from the pedestal to facilitate the replacement of the substrate 229 using a robot utilized to transfer the substrate 229 into and out of the processing area 220B through a substrate transfer port 260.

[0025]

[0027] A chamber lid 204 may be connected to the top of the chamber body 202. The lid 204 may house one or more precursor distribution systems 208 connected thereto. The precursor distribution system 208 may include a precursor inlet passage 240, which can supply reactants and washing precursors into the processing area 220B through a dual-channel showerhead 218. The dual-channel showerhead 218 may include an annular base plate 248 having a blocker plate 244 positioned in the middle of a faceplate 246. A radio frequency (RF) source 265 may be connected to the dual-channel showerhead 218, which can power the dual-channel showerhead 218 to facilitate the generation of a plasma region between the faceplate 246 of the dual-channel showerhead 218 and the pedestal 228. In some embodiments, the RF source may be coupled to other parts of the chamber body 202, such as the pedestal 228, to facilitate plasma generation. A dielectric isolator 258 may be placed between the lid 204 and the dual-channel showerhead 218 to prevent the conduction of RF power to the lid 204. A shadow ring 206 that engages with the pedestal 228 may be placed around the pedestal 228.

[0026]

[0028] To cool the annular base plate 248 during operation, optional cooling channels 247 can be formed in the annular base plate 248 of the precursor distribution system 208. A heat transfer fluid (e.g., water, ethylene glycol, gas, etc.) can be circulated through the cooling channels 247 so that the base plate 248 can be maintained at a predetermined temperature. To prevent the side walls 201, 212 from being exposed to the processing environment in the processing area 220B, a liner assembly 227 can be positioned in the processing area 220B adjacent to the side walls 201, 212 of the chamber body 202. The liner assembly 227 may include a circumferential pumping cavity 225 which can be connected to a pumping system 264 configured to exhaust gases and by-products from the processing area 220B and to control the pressure within the processing area 220B. Multiple exhaust ports 231 can be formed on the liner assembly 227. The exhaust port 231 may be configured to allow gas to flow from the processing area 220B to the circumferential pumping cavity 225 in a manner that facilitates processing within the system 200.

[0027]

[0029] Figure 3 shows the operation of an exemplary semiconductor processing method 300 according to several embodiments of the present technology. The method can be performed in a variety of processing chambers, including the processing system 200 described above, as well as any other chambers in which plasma deposition may be performed. Method 300 may include several optional operating steps, which may or may not be specifically associated with certain embodiments of the method according to the present technology.

[0028]

[0030] Method 300 may include an operation step of forming a layer of material such as a film, or a processing method including other deposition operations while pulsing RF power, thereby obtaining desired mechanical properties, which can be further described below. The method may include an optional operation step before starting Method 300, and may also include additional operations. For example, Method 300 may include operations performed before starting the method, such as additional deposition, removal, or processing operations. In some embodiments, Method 300 includes introducing one or more deposition precursors into a processing chamber in operation step 305, thereby supplying one or more precursors to a processing area of ​​the chamber containing a substrate, such as area 220.

[0029]

[0031] In some embodiments, one or more deposition precursors are or may include tungsten-containing precursors for producing tungsten-containing materials such as tungsten carbide or tungsten-boron carbide. In the deposition of tungsten carbide or tungsten-boron carbide, one or more deposition precursors may also include carbon-containing precursors and / or boron-containing precursors. The deposition precursors may or may not include the supply of additional precursors, such as carrier gases. In some embodiments, deposition can utilize a single deposition precursor containing tungsten and carbon and / or boron. Carrier gases, such as inert precursors, may be supplied along with the deposition precursors, but additional precursors intended to react with one or more deposition precursors to produce deposition products may not be used. By limiting deposition to a single precursor, the need for uniform mixing and supply of multiple precursors can be eliminated, allowing for the use of a simpler deposition chamber.

[0030]

[0032] Tungsten-containing precursors according to some embodiments of the present technology may include tungsten-containing precursors, linear branched precursors, cyclic precursors, or any number of additional precursors. Any number of tungsten-containing precursors can be used, but in some embodiments of the present technology, exemplary tungsten-containing precursors are or may include tungsten hexafluoride (WF6) or tungsten hexachloride (WCl6). The flow rate of the tungsten-containing precursor may be about 1,000 sccm or less, for example, about 900 sccm or less, about 800 sccm or less, about 700 sccm or less, about 600 sccm or less, about 500 sccm or less, about 400 sccm or less, about 300 sccm or less, about 200 sccm or less, about 100 sccm or less, about 75 sccm or less, about 50 sccm or less, about 25 sccm or less, about 10 sccm or less, or less.

[0031]

[0033] The carbon-containing precursors in some embodiments of this technology may include carbon-containing precursors, linear branched precursors, cyclic precursors, or any number of additional precursors. Any number of carbon-containing precursors can be utilized, but in some embodiments of this technology, the exemplary carbon-containing precursors may be or contain hydrocarbons such as alkenes. For example, the carbon-containing precursors may be propene (C3H6) or butene (C4H8), or contain these. The flow rate of the carbon-containing precursors, if present, may be about 1,000 sccm or less, for example, about 900 sccm or less, about 800 sccm or less, about 700 sccm or less, about 600 sccm or less, about 500 sccm or less, about 400 sccm or less, about 300 sccm or less, about 200 sccm or less, about 100 sccm or less, about 75 sccm or less, about 50 sccm or less, about 25 sccm or less, about 10 sccm or less.

[0032]

[0034] Boron-containing precursors according to some embodiments of the present technology may include boron-containing precursors, linear branched precursors, cyclic precursors, or any number of additional precursors. Any number of boron-containing precursors can be used, but in some embodiments of the present technology, exemplary boron-containing precursors are or may include borane (BH3), diborane (B2H6), boron trifluoride (BF3), or boron trichloride (BCl3). If a boron-containing precursor is present, its flow rate may be approximately 5,000 sccm or less, for example, approximately 4,000 sccm or less, approximately 3,000 sccm or less, approximately 2,000 sccm or less, approximately 1,000 sccm or less, approximately 750 sccm or less, approximately 500 sccm or less, approximately 400 sccm or less, approximately 300 sccm or less, approximately 200 sccm or less, approximately 100 sccm or less, approximately 75 sccm or less, approximately 50 sccm or less, approximately 25 sccm or less, approximately 10 sccm or less, or less.

[0033]

[0035] In operation step 310, plasma of precursors within the processing area can be generated by supplying RF power to a faceplate to generate plasma within the processing area 220, but any other processing chamber capable of generating plasma can be used in the same way. Plasma can be formed by pulsed RF power instead of using continuous RF power. The RF power can be repeatedly cycled between "on" and "off". During the "on" cycle, the RF operating power may be approximately 3,000 W or less. The pulse frequency may be approximately 100,000 Hz or less. The duty cycle may be between approximately 5% and 95%. Pulsing the RF power allows for an increase in ion density while maintaining the average ion energy, compared to continuous RF power. In conventional processing with continuous RF power, the ion density is approximately 1 × 10⁻¹⁶ per cubic meter. 16 There may be individual ions, but in the embodiments of this disclosure, there are about 1 × 10 per cubic meter. 18 or 1 × 10 19It can be characterized by an ion density of 100 ions or more. By forming a plasma with pulsed RF power, the tungsten content in the film can be increased while maintaining or reducing the average surface roughness of the film, thereby increasing the stress of the film without increasing the extinction coefficient of the film.

[0034]

[0036] In conventional deposition processes, the continuous RF power may be, for example, 500W or less. In embodiments of this disclosure, the RF power may be at a higher level during the "on" cycle. In conventional tungsten-containing film deposition processes, higher plasma RF power can adversely affect the mechanical properties of the material layer. For example, higher plasma RF power on a continuous basis can increase the average surface roughness of the material, decrease the upper limit of stress, increase the extinction coefficient of the film, or reduce the tungsten uptake required to maintain mechanical properties. However, this disclosure has found that by cycling with increasing plasma power, it is possible to increase the ion density compared to continuous RF power while maintaining ion energy similar to that of continuous RF power. In the embodiment, the RF power may be approximately 500W or more, for example, approximately 600W or more, approximately 700W or more, approximately 800W or more, approximately 850W or more, approximately 900W or more, approximately 950W or more, approximately 1,000W or more, approximately 1,250W or more, approximately 1,500W or more, approximately 1,750W or more, approximately 2,000W or more, approximately 2,250W or more, approximately 2,500W or more, approximately 2,750W or more, or more. Furthermore, as mentioned above, the RF power may be approximately 3,000W or less, approximately 2,750W or less, approximately 2,500W or less, approximately 2,250W or less, approximately 2,000W or less, approximately 1,750W or less, approximately 1,500W or less, or less.

[0035]

[0037] The mechanical properties of a material can be adjusted by increasing the pulse frequency. Higher pulse frequencies can increase stress at a greater rate than lower pulse frequencies. However, lower pulse frequencies may increase other properties, such as the extinction coefficient and tungsten content, more significantly than higher pulse frequencies. In embodiments of this disclosure, the pulse frequency may be about 12,500 Hz or less, about 10,000 Hz or less, about 9,000 Hz or less, about 8,000 Hz or less, about 7,000 Hz or less, about 6,000 Hz or less, about 5,000 Hz or less, about 4,000 Hz or less, about 3,000 Hz or less, about 2,000 Hz or less, about 1,000 Hz or less, or less. While the greatest improvement in the mechanical properties of a material has been observed at frequencies between about 1,000 Hz and about 8,000 Hz, improvements in properties are also observed at frequencies below 1,000 Hz or above 8,000 Hz compared to continuous RF power.

[0036]

[0038] At lower duty cycles, stress may increase, but the extinction coefficient may also increase. Furthermore, at lower duty cycles, the tungsten content may decrease. When the duty cycle is less than 5%, stress may not increase significantly. Conversely, at higher duty cycles, the extinction coefficient may also increase, but stress may not increase. Furthermore, at higher duty cycles, the tungsten content may increase. By maintaining the duty cycle between approximately 5% and approximately 95%, it is possible to produce materials characterized by both increased stress and decreased extinction coefficient. For example, the duty cycle may be approximately 10% or more, approximately 15% or more, approximately 20% or more, approximately 25% or more, approximately 30% or more, approximately 35% or more, approximately 40% or more, approximately 45% or more, approximately 50% or more, approximately 55% or more, approximately 60% or more, or approximately 65% ​​or more. Similarly, the duty cycle may be approximately 90% or less, approximately 85% or less, approximately 80% or less, approximately 75% or less, approximately 70% or less, approximately 65% ​​or less, approximately 60% or less, approximately 55% or less, approximately 50% or less, approximately 45% or less, approximately 40% or less, or approximately 35% or less.

[0037]

[0039] Deposition can be carried out at substrate or pedestal temperatures below approximately 800°C due to thermal budget issues in back-end line operations. Therefore, in some embodiments, deposition can occur at temperatures below approximately 750°C, below approximately 700°C, below approximately 650°C, below approximately 600°C, below approximately 550°C, below approximately 500°C, below approximately 450°C, below approximately 400°C, below approximately 350°C, below approximately 300°C, below approximately 250°C, below approximately 200°C, or below. Furthermore, deposition can be carried out at pressures below approximately 75 Torr, for example, below approximately 65 Torr, below approximately 60 Torr, below approximately 55 Torr, below approximately 50 Torr, below approximately 40 Torr, below approximately 30 Torr, below approximately 20 Torr, below approximately 15 Torr, below approximately 10 Torr, below approximately 7 Torr, below approximately 5 Torr, below approximately 2 Torr, or below.

[0038]

[0040] The material formed in the plasma can be deposited onto the substrate in operation step 315 to create a layer of material on the substrate. The material layer may contain tungsten-containing materials such as tungsten-carbon-containing materials. The tungsten-carbon-containing material is tungsten carbide or tungsten-boron carbide, or may contain both. Pulsing the RF power increases the ion density in the plasma, which can improve the mechanical properties of the material layer deposited on the substrate. The increase in ion density during RF pulsed operation increases the density of the film compared to conventional methods using continuous RF power, and as a result, the film can be strengthened. Furthermore, by maintaining the average ion energy, it becomes possible to increase the amount of tungsten in the film and / or increase the stress without increasing the average surface roughness and / or extinction coefficient of the film.

[0039]

[0041] As explained above, conventional techniques operating with continuous plasma power may result in lower ion densities than when the plasma power is pulsed, potentially leading to lower-than-expected material stress. By pulsing RF power according to this technique, tungsten-containing materials with high tensile stress can be produced. Unlike low-stress materials, which are characterized by internal stress levels close to neutral stress (i.e., 0 MPa), high-stress materials are characterized by internal stress levels significantly higher than 0 MPa (i.e., high positive (tensile) stress) or significantly lower than 0 MPa (i.e., high negative (compressive) stress). For example, the membrane can be characterized by a stress of approximately 200 MPa or higher, and may also be approximately 225 MPa or higher, approximately 250 MPa or higher, approximately 275 MPa or higher, approximately 300 MPa or higher, approximately 325 MPa or higher, approximately 350 MPa or higher, approximately 375 MPa or higher, approximately 400 MPa or higher, approximately 425 MPa or higher, approximately 450 MPa or higher, approximately 475 MPa or higher, approximately 500 MPa or higher, approximately 525 MPa or higher, approximately 550 MPa or higher, approximately 575 MPa or higher, approximately 600 MPa or higher, or exceeding these limits.

[0040]

[0042] Stress may be related to the material properties of the film, with higher stress resulting in a higher average surface roughness (Ra) of the film. However, by manufacturing the film according to embodiments of this technology, the stress can be increased without further increasing the average surface roughness (Ra) of the film, as occurs with conventional techniques. In embodiments, the material layer can be characterized by an average surface roughness (Ra) of approximately 0.7 nm or less, for example, approximately 0.65 nm or less, approximately 0.6 nm or less, approximately 0.58 nm or less, approximately 0.56 nm or less, approximately 0.54 nm or less, approximately 0.52 nm or less, approximately 0.5 nm or less, approximately 0.48 nm or less, approximately 0.46 nm or less, approximately 0.44 nm or less, approximately 0.42 nm or less, approximately 0.4 nm or less, or less.

[0041]

[0043] Furthermore, by manufacturing films according to some embodiments of this technology, the Young's modulus can be maintained at a higher level than in conventional techniques that can produce films with corresponding mechanical properties. For example, in some embodiments, this technology can manufacture materials characterized by a Young's modulus of about 5.0 Gpa or higher, and can also be characterized by Young's moduli of about 7.5 Gpa or higher, about 10.0 Gpa or higher, about 12.5 Gpa or higher, about 15.0 Gpa or higher, about 17.5 Gpa or higher, about 20.0 Gpa or higher, about 22.5 Gpa or higher, about 25.0 Gpa or higher, about 27.5 Gpa or higher, about 28.0 Gpa or higher, about 28.5 Gpa or higher, about 29.0 Gpa or higher, about 29.5 Gpa or higher, about 30.0 Gpa or higher, or higher. As a result, this technology can manufacture films characterized by increased stress and reduced mean surface roughness (Ra) while maintaining a higher material Young's modulus.

[0042]

[0044] The film can be characterized by an extinction coefficient of approximately 2.5 or greater at 633 nm. The extinction coefficient of the deposited film may be related to the deposition temperature, with lower temperatures resulting in an increased extinction coefficient. This high extinction coefficient makes the film suitable for tungsten-doped hard mask applications. In embodiments, the film can be characterized by an extinction coefficient of approximately 2.55 or greater at 633 nm, for example, approximately 2.6 or greater, approximately 2.65 or greater, approximately 2.7 or greater, approximately 2.75 or greater, approximately 2.8 or greater, approximately 2.85 or greater, approximately 2.9 or greater, approximately 2.95 or greater, approximately 3.0 or greater, approximately 3.05 or greater, approximately 3.1 or greater, or greater. Unlike conventional techniques using continuous RF power, the pulsed nature of this technique can eliminate the trade-off between the extinction coefficient and mean surface roughness (Ra). Therefore, an increase in the extinction coefficient value may not lead to an increase in the mean surface roughness (Ra) value. In fact, as the extinction coefficient increases, the mean surface roughness (Ra) may actually decrease.

[0043]

[0045] Conventional techniques may result in an increase in the average surface roughness (Ra) of a film as the tungsten content increases. However, by manufacturing according to embodiments of this technology, it is possible to increase the amount of tungsten incorporated into the film without increasing the average surface roughness (Ra) of the film. This technology makes it possible to achieve tungsten content in the film of approximately 30 at.% or more, for example, approximately 31 at.% or more, approximately 32 at.% or more, approximately 33 at.% or more, approximately 34 at.% or more, approximately 35 at.% or more, approximately 36 at.% or more, approximately 37 at.% or more, approximately 38 at.% or more, or more. The increased tungsten content makes the film more suitable for applications as a tungsten-doped hard mask.

[0044]

[0046] Conventional techniques can lead to adhesion problems when depositing tungsten-containing materials. For example, in thin-film deposition for logic applications, extensive pretreatment may be required to ensure sufficient adhesion between the tungsten-containing material and the substrate material. The application of this invention and the use of pulsed RF power can achieve sufficient adhesion without extensive pretreatment. Therefore, this technology has the potential to improve the throughput of thin-film deposition. Furthermore, in thick-film deposition for memory applications, long tungsten ramp-up operations may be required to ensure sufficient adhesion between the tungsten-containing material and the substrate material. This extensive ramp-up operation can result in the formation of a thick initiation layer with a different composition from the bulk material. The application of this invention and the use of pulsed RF power can achieve sufficient adhesion and produce a much thinner initiation layer with a composition similar to the bulk material. Therefore, embodiments of this technology can improve throughput and avoid integration problems that may be associated with conventional technologies.

[0045]

[0047] The above description includes many details for illustrative purposes in order to provide an understanding of the various embodiments of the Technology. However, it will be obvious to those skilled in the art that certain embodiments may be carried out without some of these details, or with additional details.

[0046]

[0048] While several embodiments have been disclosed, those skilled in the art will understand that various modifications, alternative structures, and equivalents can be used without departing from the spirit of the embodiments. In addition, some well-known processes and elements have not been described in order to avoid unnecessarily obscuring the Art. Therefore, the descriptions in the prior specification should not be considered to limit the scope of the Art.

[0047]

[0049] Where a range of values ​​is provided, unless explicitly stated otherwise in the context, each intermediary value between the upper and lower limits of that range is, of course, specifically disclosed down to the smallest unit of the lower limit. Narrower ranges between any two listed values ​​or between unlisted intermediary values ​​within a given range, and other listed or intermediary values ​​within such ranges, are included. The upper and lower limits of such narrower ranges may be included in or excluded from that range individually. Each range in which one, neither, or both of the limits are included is also included in the Art, although there may be limits that are specifically excluded within the given range. Where one or both of the limits are included in a given range, the range excluding one or both of the included limits is also included.

[0048]

[0050] As used herein and in the claims, the singular forms “a,” “an,” and “the” include multiple references unless the context clearly indicates otherwise. For example, a reference to “tungsten-containing precursor” includes multiple such tungsten-containing precursors, and a reference to “layer of material” includes one or more layers of material and their equivalents known to those skilled in the art.

[0049]

[0051] Furthermore, the terms “comprise(s),” “comprising,” “contain(s),” “containing,” “include(s),” and “including,” as used herein and in the claims, are intended to identify the presence of the described features, integers, components, or steps, but not to exclude the presence or addition of one or more other features, integers, components, processes, operations, or groups.

Claims

1. A semiconductor processing method, Providing one or more deposition precursors to the processing area of ​​a semiconductor processing chamber, wherein the deposition precursors include a tungsten-containing precursor, and a substrate is placed within the processing area of ​​the semiconductor processing chamber; Forming a plasma of one or more deposition precursors within the processing region, wherein the plasma is at least partially formed by RF power operating at approximately 3,000 W or less and at a pulse frequency of approximately 100,000 Hz or less, Forming a material layer containing a tungsten-containing material on the substrate. A semiconductor processing method including [specific components].

2. The tungsten-containing precursor is tungsten hexafluoride (WF ６ The semiconductor processing method according to claim 1, including ).

3. The semiconductor processing method according to claim 1, wherein the temperature inside the semiconductor processing chamber is maintained at approximately 800°C or less while the material layer is being formed on the substrate.

4. The semiconductor processing method according to claim 1, wherein the pressure in the semiconductor processing chamber is maintained at approximately 75 Torr or less while the material layer is being formed on the substrate.

5. The one or more depositional precursors further comprise a carbon-containing precursor, The material layer contains a tungsten-carbon-containing material. The semiconductor processing method according to claim 1.

6. The semiconductor processing method according to claim 5, wherein the carbon-containing precursor includes a hydrocarbon.

7. The carbon-containing precursor is propene (C ３ H ６ The semiconductor processing method according to claim 5, including ).

8. The semiconductor processing method according to claim 1, wherein the plasma is at least partially formed by RF power operating with a duty cycle between approximately 10% and 90%.

9. The semiconductor processing method according to claim 1, wherein the material layer is characterized by an extinction coefficient of about 2.5 or more at 633 nm.

10. The semiconductor processing method according to claim 1, wherein the material layer is characterized by an average surface roughness (Ra) of about 0.7 nm or less.

11. The semiconductor processing method according to claim 1, wherein the material layer is characterized by a tungsten content of about 30 at.% or more.

12. The semiconductor processing method according to claim 1, wherein the material layer is characterized by a stress of approximately 200 MPa or more.

13. A semiconductor processing method, The tungsten-containing precursor and the carbon-containing precursor are provided to a processing area of ​​a semiconductor processing chamber, in which a substrate is placed. Forming a plasma of the tungsten-containing precursor and the carbon-containing precursor in the processing region, wherein the plasma is at least partially formed by RF power operating at a pulse frequency of about 10,000 Hz or less, between about 500 W and about 2,000 W, and with a duty cycle between about 10% and 90%, A material layer is formed on the substrate, comprising a tungsten-containing material, characterized by a tungsten content of approximately 30 at.% or more, and characterized by an average surface roughness (Ra) of approximately 0.7 nm or less. A semiconductor processing method including [specific components].

14. The tungsten-containing precursor is tungsten hexafluoride (WF ６ ) including, The carbon-containing precursor is propene (C ３ H ６ ) including The semiconductor processing method according to claim 13.

15. During the formation of the material layer on the substrate, the temperature inside the semiconductor processing chamber is maintained at approximately 700°C or lower. During the formation of the material layer on the substrate, the pressure inside the semiconductor processing chamber is maintained at approximately 60 Torr or less. The semiconductor processing method according to claim 13.

16. The semiconductor processing method according to claim 13, further comprising providing a boron-containing precursor together with the tungsten-containing precursor and the carbon-containing precursor to the processing region of the semiconductor processing chamber.

17. The semiconductor processing method according to claim 13, wherein the material layer is characterized by a stress of approximately 250 MPa or more.

18. A semiconductor processing method, The tungsten-containing precursor and the carbon-containing precursor are provided to a processing area of ​​a semiconductor processing chamber, in which a substrate is placed. Forming a plasma of the tungsten-containing precursor and the carbon-containing precursor in the processing region, wherein the plasma is at least partially formed by RF power operating at a pulse frequency of about 10,000 Hz or less and with a duty cycle between about 10% and 90%, A material layer is formed on the substrate, comprising a tungsten-containing material, characterized by a tungsten content of approximately 30 at.% or more, an average surface roughness (Ra) of approximately 0.7 nm or less, and an extinction coefficient of approximately 2.5 or more at 633 nm. A semiconductor processing method including [specific components].

19. The semiconductor processing method according to claim 18, wherein the plasma is at least partially formed by RF power operating at 500 W or more and at a pulse frequency of about 1,000 Hz or more and about 8,000 Hz or less.

20. The semiconductor processing method according to claim 18, further comprising providing a boron-containing precursor together with the tungsten-containing precursor and the carbon-containing precursor to the processing region of the semiconductor processing chamber.

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