Shut-off valve gasket

Abstract

In some examples, shut-off valves are provided for shutting off gases and plasmas in semiconductor manufacturing. An exemplary shut-off valve comprises a valve body, a valve actuator, and a poppet. The poppet comprises a gasket made of polytetrafluoroethylene (PTFE) material. The poppet is configured to move within the valve body by the valve actuator to either (1) an engaged position in which at least a portion of the gasket is in contact with the opposing surface, or (2) an unengaged position in which the gasket is not in contact with the opposing surface.

Description

Technical Field

[0001] [Claiming Priority] This application claims the benefit of priority of U.S. Patent Application No. 63 / 460,519, filed on April 19, 2023, the entire disclosure of which is incorporated herein by reference.

[0002] The subject matter disclosed herein generally relates to shutoff valves for use in semiconductor manufacturing, and in some examples, to components for shutoff valves such as shutoff valve gaskets.

Background Art

[0003] Semiconductor substrate processing systems are used to process semiconductor substrates by techniques including etching, physical vapor deposition (PVD), atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), pulse deposition layer (PDL), plasma enhanced pulse deposition layer (PEPDL), and resist removal. One type of semiconductor substrate processing apparatus is a plasma processing apparatus including a vacuum processing chamber having an upper electrode and a lower electrode. In a substrate processing cycle, high-frequency (RF) power is applied between the electrodes to excite a process gas into a plasma to process a semiconductor substrate within the chamber.

[0004] The vacuum processing chamber is typically supplied by a process gas supply line. The process supply line may include one or more shutoff valves that operate to block the process gas from a purge gas as needed. Conventional shutoff valves include an O-ring sealing structure. High temperatures, severe dynamic response requirements, and harsh chemical environments can make valve applications particularly difficult in semiconductor processing. Conventional shutoff valves having an O-ring sealing structure fail rapidly and frequently. Such O-ring failures are a limiting factor in extending preventive maintenance (PM) cycles.

[0005] The background information provided herein is intended to provide a general overview of the contents of this disclosure. It should be noted that the information contained in this section is provided to a person skilled in the art to provide some context to the subject matter disclosed below and should not be considered recognized prior art. More specifically, any research by the inventors named at present, as well as any description that cannot be otherwise considered prior art at the time of filing, within the scope described in this background information section, shall not be recognized as prior art to this disclosure, whether express or implied. [Overview of the Initiative]

[0006] Methods and systems for shutting off gases such as process gases and cleaning gases in semiconductor manufacturing are presented. Some examples include shut-off valves and components for shut-off valves (e.g., poppets with shut-off valve gaskets) for use in semiconductor manufacturing.

[0007] In some examples, a shut-off valve includes a valve body, a valve actuator, and a poppet having a gasket made of polytetrafluoroethylene (PTFE) material. The poppet is configured to move within the valve body by the valve actuator to either (1) an engaged position in which at least a portion of the gasket is in contact with the opposing surface, or (2) an unengaged position in which the gasket is not in contact with the opposing surface.

[0008] In some embodiments, the poppet is provided with a binding channel, and the gasket is secured to the poppet through the binding channel.

[0009] In some embodiments, the bonding channel is formed on the plane of the upper surface of the poppet. In some embodiments, the plane of the upper surface of the poppet is substantially parallel to the plane of the opposing surface.

[0010] In some embodiments, the lower surface of the gasket is configured to cover the upper surface of the poppet, and the upper surface of the gasket is configured to form a sealing contact with the opposing surface.

[0011] In some embodiments, the gasket includes at least one tab portion arranged along the circumference of the lower surface of the gasket. The at least one tab portion, configured to fit into a coupling channel, secures the gasket to the poppet.

[0012] In some embodiments, at least one tab portion includes a first tab portion and a second tab portion. In some embodiments, the first tab portion and the second tab portion are configured to face each other along the circumference of the lower surface of the gasket.

[0013] In some embodiments, the first tab portion and the second tab portion each consist of a length of approximately one-quarter of the circumference of the lower surface of the gasket.

[0014] In some embodiments, at least one tab portion includes a first segment of a first width, the first segment projecting perpendicularly to the lower surface of the gasket.

[0015] In some embodiments, at least one tab portion includes a second section of a second width, the second section projecting perpendicularly to the first section, and the first width being smaller than the second width.

[0016] In some embodiments, at least one tab portion is configured to form at least one gap between the outer surface of at least one tab portion and the inner surface of the bonding channel.

[0017] In some embodiments, the poppet is configured to move within the valve body by a valve actuator without the need for an O-ring.

[0018] In some embodiments, the poppet and gasket have a one-piece structure composed solely of PTFE material, or constructed solely of PTFE material.

[0019] In some embodiments, the gasket for the shut-off valve includes a gasket made of polytetrafluoroethylene (PTFE) material. The gasket includes at least one tab portion arranged along the circumference of the lower surface of the gasket. The at least one tab portion is configured to fit into a coupling channel of the poppet of the shut-off valve to secure the gasket to the poppet.

[0020] In some embodiments, at least one tab portion includes a first tab portion and a second tab portion. In some embodiments, the first tab portion and the second tab portion are configured to face each other along the circumference of the lower surface of the gasket.

[0021] In some embodiments, the first tab portion and the second tab portion each consist of a length of approximately one-quarter of the circumference of the lower surface of the gasket.

[0022] In some embodiments, the first tab portion and the second tab portion are each configured to be longer than approximately one-quarter of the circumference of the lower surface of the gasket.

[0023] In some embodiments, at least one tab portion includes a first segment of a first width, the first segment projecting perpendicularly to the lower surface of the gasket.

[0024] In some embodiments, at least one tab portion includes a second division having a second width. The second division protrudes perpendicularly to the first division, and the first width is smaller than the second width.

[0025] In some embodiments, at least one tab portion is configured to form at least one gap between the outer surface of at least one tab portion and the inner surface of the bonding channel.

[0026] In some embodiments, a method of operating a shut-off valve includes moving a poppet having a gasket of polytetrafluoroethylene (PTFE) material to a non-engaged position where the gasket is not in contact with the opposing surface. Process gas is supplied to the processing chamber via a gas supply line while the poppet is in the non-engaged position. The poppet having the gasket of PTFE material moves to an engaged position after a predetermined amount of process gas has been supplied to the processing chamber, and at least a portion of the gasket is in contact with the opposing surface at the engaged position.

[0027] In some embodiments, a cleaning gas or a purge gas is supplied to the processing chamber via a gas supply line. The poppet moves between the non-engaged position and the engaged position to control the amount of cleaning gas or purge gas entering the processing chamber.

Brief Description of the Drawings

[0028] The various figures of the accompanying drawings merely illustrate exemplary embodiments of the present disclosure and should not be construed as limiting its scope.

[0029] [Figure 1] FIG. 1 shows a processing chamber, such as a deposition chamber for manufacturing a substrate, according to some exemplary embodiments.

[0030] [Figure 2] FIG. 2 is a schematic cross-sectional view of a shut-off valve according to an exemplary embodiment.

[0031] [Figure 3] FIG. 3 is an isometric view of a gasket used in the shut-off valve of FIG. 2 according to an exemplary embodiment.

[0032] [Figure 4] FIGS. 4 and 5 are side perspective views of an exemplary poppet having a gasket according to an exemplary embodiment. [Figure 5]Figures 4 and 5 are side perspective views of an exemplary poppet with a gasket, according to an exemplary embodiment.

[0033] [Figure 6] Figures 6 and 7 are side perspective views of an exemplary poppet including an O-ring made of polytetrafluoroethylene (PTFE) material, according to an exemplary embodiment. [Figure 7] Figures 6 and 7 are side perspective views of an exemplary poppet including an O-ring made of polytetrafluoroethylene (PTFE) material, according to an exemplary embodiment.

[0034] [Figure 8] Figure 8 is a block diagram showing an example of a machine that can perform one or more exemplary methods or control one or more exemplary embodiments. [Modes for carrying out the invention]

[0035] Methods and systems for shutting off gases such as process gases and cleaning gases, as well as plasma, in semiconductor manufacturing are presented. Examples of gases and plasmas include nitrogen trifluoride (NF3), hydrogen chloride (HCl), hydrogen fluoride (HF), fluorine-containing plasma, and oxygen-containing plasma. Some examples include shut-off valves and components for shut-off valves for use in semiconductor manufacturing. For illustrative purposes, numerous specific details are provided below to provide a complete understanding of the exemplary embodiments. However, it will be apparent to those skilled in the art that the subject matter can be carried out without these specific details.

[0036] As used herein, the terms “wafer” and “substrate” are interchangeable. A wafer or substrate refers to a support material on which elements of a semiconductor device are fabricated or mounted, either on or within it. A substrate (e.g., substrate 106 in Figure 1) may include wafers (e.g., having diameters of 100 mm, 150 mm, 200 mm, 300 mm, 450 mm, or larger) made of, for example, elemental semiconductor materials (e.g., silicon (Si) or germanium (Ge)) or compound semiconductor materials (e.g., silicon germanium (SiGe) or gallium arsenide (GaAs)). Further, other substrates include dielectric materials such as quartz or sapphire (on which semiconductor materials may be applied). Examples of substrates include blanket substrates and patterned substrates. A blanket substrate is a substrate with a low surface area (or planar) top surface. A patterned substrate is a substrate with a high surface area (or structured) top surface. The structured top surface of the substrate may include different high-surface-area structures such as 3D NAND memory holes or other structures.

[0037] A general description of a processing chamber using the disclosed apparatus and method is provided with reference to Figure 1. Figure 1 shows a processing chamber 100 for manufacturing a substrate (e.g., a semiconductor processing chamber for etching or deposition) according to one embodiment. In some examples, the processing chamber 100 may also be referred to as a vacuum chamber. Exciting an electric field between two electrodes is one method for obtaining a radio frequency (RF) gas discharge in the processing chamber. When an oscillating voltage is applied between the electrodes, the resulting discharge is called a capacitively coupled plasma (CCP) discharge.

[0038] One or more process gases may be used to generate a plasma 102 within the processing zone 130 of the processing chamber 100, yielding a wide variety of chemically reactive byproducts produced by the dissociation of various molecules caused by electron-neutral collisions. The chemical aspect of etching involves the reaction of neutral gas molecules and their dissociated byproducts with molecules on the surface to be etched, generating volatile molecules. These volatile molecules may be pumped out. Once the plasma is generated, positive ions are accelerated from the plasma across a space charge sheath separating the chamber wall from the plasma, and collide with the substrate surface with sufficient energy to remove material from the substrate surface. The process of selectively and anisotropically removing material from a substrate surface using high-energy and chemically reactive ions is called reactive ion etching (RIE). In some examples, the processing chamber 100 may be used in connection with a PECVD or PEALD deposition process.

[0039] The controller 116 manages the operation of the processing chamber 100 by controlling various elements within the processing chamber 100, such as the RF generator 118, the gas source 122, and the gas pump 120, during processing, cleaning, and purging cycles. The gas source 122 may include a cleaning gas source, a process gas source, and a purge gas source. Other gas sources are also possible. In one embodiment, fluorocarbon gases such as CF4 and C4F8 are used in the dielectric etching process due to their anisotropic and selective etching capabilities, but the principles described herein may be applied to other plasma-generating gases. Fluorocarbon gases readily dissociate into chemically reactive byproducts containing smaller molecular and atomic radicals. These chemically reactive byproducts etch away the dielectric material.

[0040] The processing chamber 100 shows a processing chamber having an upper (or top) electrode 104 and a lower (or bottom) electrode 108. Exemplary processes in which the shut-off valve of this disclosure may be used include thermal ALD processes, which may or may not include in situ plasma. Examples of other processes include techniques such as etching, physical vapor deposition (PVD), atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), pulsed deposition (PDL), plasma-enhanced pulsed deposition (PEPDL), and resist removal. The upper electrode 104 may be grounded or coupled to an RF generator (not shown), and the lower electrode 108 is coupled to the RF generator 118 via a matching network 114. The RF generator 118 supplies an RF signal between the upper electrode 104 and the lower electrode 108 to generate RF power at one or more (e.g., two or three) different RF frequencies. Depending on the desired configuration of the processing chamber 100 for a particular operation, at least one of several RF frequencies can be turned on or off. In the embodiment shown in Figure 1, the RF generator 118 is configured to supply at least three different frequencies, for example, 400 kHz, 2 MHz, 27 MHz, and 60 MHz, but other frequencies are also possible.

[0041] The processing chamber 100 includes a showerhead 105 on an upper electrode 104 for introducing process gas supplied by a gas source 122 into the processing chamber 100, and a perforated confinement ring 112 for discharging the gas from the processing chamber 100 by a gas pump 120. In some exemplary embodiments, the gas pump 120 is a turbomolecular pump, but other types of gas pumps may be used.

[0042] When the substrate 106 is inside the processing chamber 100, the silicon focus ring 110 can be positioned next to the substrate 106 so that a uniform RF field exists at the bottom of the plasma 102 for uniform etching (or deposition) on the surface of the substrate 106. The embodiment in Figure 1 shows a three-electrode reactor structure in which the upper electrode 104 is surrounded by a ground electrode 124 (e.g., a symmetric RF ground electrode). The insulator 126 is a dielectric that insulates the ground electrode 124 from the upper electrode 104. Other mounting configurations of the processing chamber 100, including ICP-based mounting configurations, are also possible without changing the scope of the disclosed embodiments.

[0043] Each frequency generated by the RF generator 118 may be selected for a specific purpose in the substrate manufacturing process. In the example in Figure 1, RF power is supplied at 400 kHz, 2 MHz, 27 MHz, and 60 MHz, with the 400 kHz or 2 MHz RF power providing ion energy control, and the 27 MHz and 60 MHz powers providing control of plasma density and chemical dissociation patterns. This configuration, in which each RF power can be turned on or off, enables certain processes that use ultra-low ion energy on the substrate, and certain processes that require low ion energy (e.g., less than 700 or 200 eV) (e.g., soft etching of low-k materials).

[0044] In another embodiment, 60 MHz RF power is used on the upper electrode 104 to obtain ultra-low energy and very high density. This configuration allows for chamber cleaning with high-density plasma when the substrate 106 is not inside the processing chamber 100, while minimizing sputtering on the electrostatic chuck surface (ESC). The ESC surface is exposed when the substrate 106 is not present, and in this case, any ionic energy on the surface should be avoided, which is why the 2 MHz and 27 MHz power supplies at the bottom can be turned off during cleaning.

[0045] In exemplary embodiments, the processing chamber 100 may further include a sensor 128 positioned between the matching network 114 of the RF generator 118 and the lower electrode 108. The sensor 128 may include a voltage-current (or VI) sensor configured to generate a plurality of signals (e.g., sensing data) that exhibit at least one signal characteristic of the RF signal generated by the RF generator 118 in a plurality of corresponding time instances. For example, a VI sensor may generate a plurality of signals that exhibit one or more of the following signal characteristics of the RF signal: voltage, current, phase, supply power, and impedance. In some examples, the plurality of signals generated by the sensor 128 in a plurality of corresponding time instances may be stored (e.g., in the on-chip memory of the controller 116 or the sensor 128) and retrieved later (e.g., by the controller 116) for subsequent processing. In other embodiments, the plurality of signals generated by the sensor 128 in a plurality of corresponding time instances may be automatically transmitted to the controller 116 as they are generated.

[0046] In some examples, the gas source 122 is connected to one or more gas line supply devices located upstream of the gas showerhead on the upper electrode 104. The gas line supply devices may include one or more inlet manifolds (not visible in Figure 1) connected to the processing chamber 100. The gas source 122 may include one or more of process gas sources, cleaning gas sources, and purge gas sources, each controlled by one or more shut-off valves 200. In some examples, the gas line supply devices are connected to these gas sources 122 and used for cleaning and purging cycles of the processing chamber 100 during or after the substrate processing cycle. Other gas sources, as well as shut-off valves, gas manifolds, and gas control components, can be arranged.

[0047] In some applications, a cleaning gas shutoff valve 200 is used to shut off downstream process gases in a mixed gas injection block from upstream cleaning gases in a manifold. Application requirements may include the ability to operate at high temperatures (e.g., 200°C), resistance to chlorine-containing deposit chemicals, resistance to radical fluorine plasma / gas (such as cleaning gases), and the ability to operate dynamically (e.g., as opposed to a static seal for single use), enabling frequent use (e.g., 1-2 times per day in a production environment). This combination of requirements, particularly high-temperature capability, dynamic properties, and chemical resistance, can make valve applications particularly challenging. Conventional shutoff valves use an O-ring seal that interfaces with an opposing sealing surface, e.g., a process gas injection block. The O-ring seal moves in linear motion to open and close the shutoff valve, dynamically sealing against the opposing surface. While this conventional solution is widely used in valve applications, it often fails, sometimes lasting only one or two cycles of operation.

[0048] Current technology is susceptible to several failure mechanisms, including temperature-induced O-ring degradation. When O-ring polymer crosslinking loosens, the filler material can be released, potentially altering the O-ring's mechanical properties unfavorably. Plasma-induced O-ring degradation (both chemical and physical) can occur even in the best-performing O-rings designed for plasma applications, and under certain conditions, can lead to etching of up to 0.2–1% material loss. In some cases, shut-off valves become stuck in the closed position. Here, the O-ring, after exposure to temperature and chemicals, can stick between the interface materials, causing a separation force too high for the valve actuator to overcome. Furthermore, when stuck, the shut-off valve poppet (or closing section) can detach from the valve actuator, causing further damage to the valve mounting and actuator. In other problems, the shut-off valve body may overheat due to plasma recombination (heat generation) on the valve surface. In some cases, the shut-off valve can heat beyond its theoretical maximum operating temperature, leading to degradation of the O-ring and other shut-off valve components. The cost of O-ring materials is high, and high-purity sealing ceramic surfaces used in conventional shut-off valves can be expensive. Problems resulting from the degradation of conventional O-rings can include lack of cleanliness and contamination downstream of the processed wafer. Chemical reactions, unwanted by-products, and material losses on the O-ring can enter the process gas flow and cause defects in the processed wafer.

[0049] The embodiments disclosed herein avoid the use of polymer O-rings. With reference to Figure 2, the shut-off valve 200 comprises a valve body 202 schematically shown by a dashed outline. The body comprises an inlet generally shown as 204 and an outlet generally shown as 206. Other arrangements of the inlet and outlet are also possible. The shut-off valve 200 comprises a poppet 208 and a valve actuator 210. The valve actuator 210 and the poppet 208 together define a poppet valve assembly 211. The poppet valve assembly 211 reciprocates axially (in the direction of arrow A) inside the valve body 202 to open and close the inlet 204 and / or outlet 206 of the shut-off valve 200. In some examples, the valve actuator 210 is responsible for moving the poppet valve assembly 211, which is controlled by a controller 116 in Figure 1. In some examples, the valve actuator 210 is configured to exert sufficient spring force to seal the poppet 208 when held against the opposing surface 212 in the closed position of the shut-off valve 200. In some examples, when the actuator (e.g., with a spring) is in a free state, the poppet 208 protrudes only a short distance, in the range of 1.0 to 1.5 mm, from the valve body 202. This provides a moderate clamping force for sealing the poppet against the opposing surface 212 when the spring is compressed during use.

[0050] In some examples, the poppet valve assembly 211 is a single-piece structure including a poppet 208 molded integrally with the valve actuator 210, or includes a single-piece structure.

[0051] In some embodiments, the poppet 208 includes a gasket 218 seated within a coupling channel 216. The gasket may have an upper surface 220 and a lower surface 222. The upper surface 220 of the gasket 218 can form a sealing engagement with the opposing surface 212 when the shut-off valve 200 is closed. At least one tab portion (e.g., 302 and 304 in Figure 3) can be attached to the lower surface 222 and used to secure the gasket 218 to the poppet 208 via the coupling channel 216.

[0052] In some examples, to close the shut-off valve 200, the poppet 208 can be moved such that the upper surface 220 of the gasket 218 seals against the opposing surface 212 to block the passage of gas. The opposing surface 212 may be defined by an external component 213 into which the shut-off valve 200 fits (for example, as shown), or it may be located inside the valve body 202. Other arrangements are also possible. The poppet 208 seals against the opposing surface 212 without an O-ring seal by using the gasket 218. When the gasket 218 and poppet 208 move away from the opposing surface 212, the shut-off valve 200 opens. When the gasket 218 and poppet 208 move in the other direction and the gasket 218 engages with the opposing surface 212, the shut-off valve 200 closes.

[0053] When the shut-off valve 200 is open, gas can enter the shut-off valve 200 through the inlet 204 as indicated by arrow B and exit the valve 200 through the outlet 206 as indicated by arrow C. An example of gas flow inside the valve body 202 is shown by arrow D. As shown in the figure, gas can pass through the inlet 204 and then through the gap 214 between the poppet 208 and the opposing surface 212.

[0054] In some examples, the gasket 218 comprises polytetrafluoroethylene (PTFE) material. In some examples, the gasket 218 and / or poppet 208 are composed solely of solid blocks of PTFE material or formed from solid blocks of PTFE material. In some examples, only a portion or sub-section of the gasket 218 and / or poppet 208 comprises PTFE material. In some examples, only the sealing surface (e.g., top surface 220) of the gasket 218 located opposite the opposing surface 212 is defined by or contains PTFE material. Other configurations of a portion or sub-section of the gasket 218 and poppet 208 are also possible. The PTFE material is used as a sealing material for the gasket 218 attached to the poppet 208 of the shut-off valve 200, and can fully engage with the opposing surface without requiring an O-ring to seal the inlet 204 and close the valve 200. In some embodiments, the gasket 218 and / or poppet 208 are composed of or formed from a compound that is at least partially based on PTFE material.

[0055] Using gasket 218 containing PTFE as a sealing material can address many of the failure mechanisms described above. Firstly, it avoids the use of O-rings and the associated complexities. Gasket 218 containing PTFE has strong resistance to temperature degradation. PTFE material does not contain crosslinking or filling materials and is generally safe for operation up to 260°C. Furthermore, PTFE material contains only carbon-fluorine (CF) bonds and is completely inert to radical fluorine and halogenated chemicals such as HCl and chlorine trifluoride (ClF3). In this regard, PTFE is compatible with NF3 and has a suitable operating temperature range (e.g., an operating temperature range of about 55°C to about 120°C). In addition, PTFE has been shown to provide sufficient seal required for shut-off valve applications. In tests, several examples of poppet 208 equipped with PTFE material gaskets were found to have a loss of less than 0.01% by weight of PTFE material after prolonged exposure (72 hours) to radical fluorine at 200°C. The conventional problem of shut-off valve sticking is reduced, if not completely solved. PTFE has excellent low-friction properties, and the force required to separate it from the opposing surface when opening is almost zero. Low friction reduces the applied stress, solving the problem caused by valve poppet separation. Furthermore, PTFE is thermally insulating and has a low (almost zero) recombination rate with fluorine plasma. These properties help reduce the problem of valve overheating. Since the PTFE material is very pure and does not react with gases and other plasma chemicals, even if there is material degradation that causes wafer contamination downstream of the shut-off valve 200, it is very little, thus significantly improving the cleanliness of wafer processing.

[0056] The shut-off valve of this disclosure, including a poppet with a gasket made of PTFE material, enables the utilization of the advantages of PTFE without the need for a custom valve. More specifically, the gasket may include at least one tab portion for snap-fitting into a coupling channel (e.g., a dovetail groove on the top surface of the poppet conventionally used to receive an O-ring) to ensure that the gasket is securely seated and does not fall out. At least one tab portion also allows for easy removal and replacement of the gasket when maintenance is required. Additional features and configurations relating to the poppet 208 and gasket 218 are described in relation to Figures 3, 4 and 5. Examples of poppets using PTFE O-rings with different seating channels are shown in Figures 6 and 7.

[0057] Figure 3 is an isometric view 300 of a gasket 218 used in the shut-off valve of Figure 2, according to an exemplary embodiment. Referring to Figure 3, the gasket 218 can be manufactured from PTFE material, at least partially. In some embodiments, the gasket 218 includes one or more tab portions, for example, a first tab portion 302 and a second tab portion 304. The tab portions 302 and 304 can be attached to the lower surface 222 of the gasket 218 and can also be used to fit into the coupling channel 216 when the gasket 218 is attached to (or otherwise engaged with) the poppet 208.

[0058] In some embodiments, each tab portion includes at least two divisions associated with different dimensions and arranged orthogonally to each other. For example, as shown in Figure 3, the tab portion 302 includes a first division associated with a width 308 and a second division 314 associated with a width 310. In some embodiments, the second division 314 protrudes orthogonally to the first division 312, and the tab portion 302 takes on an inverted L-shape (e.g., a cross-sectional shape), the inverted L-shape associated with a height 306.

[0059] Figure 3 shows tab portions 302 and 304 associated with specific cross-sectional shapes (e.g., inverted L-shape) having specific dimensions for the first and second sections, but the disclosure is not limited in this respect, and other cross-sectional shapes associated with different dimensions may be used for one or more tab portions of the gasket 218. Considerations when selecting the cross-sectional shapes and lengths of tab portions 302 and 304 include the shape and depth of the coupling channel 216, and the ease of removing and positioning the gasket 218 within the coupling channel 216 when attaching the gasket 218 to the poppet 208. The top surface 220 of the gasket 218 is shown as circular, but the disclosure is not limited in this respect, and other shapes of the top surface 220 (and the gasket 218 in general) are possible based on the shape of the opposing surface 212 and / or the shape or form of the outlet 206.

[0060] In some embodiments, the tab portions 302 and 304 are positioned opposite each other. In some embodiments, each tab portion (e.g., tab portion 302) is comprised of a length 316 that is about one-quarter of the circumference of the lower surface of the gasket (for example, as shown in Figure 3, tab portion 302 is a length corresponding to an angle of about 45°). In some examples, making the tab portions about one-quarter (1 / 4) of the circumference provides proper engagement with the bonding channel while taking into account the thermal expansion of the tab within the bonding channel. Other lengths of the tab portions 302 and 304 of the gasket 218 are also available. For example, the tab portions 302 and 304 of the gasket 218 may range from less than one-quarter of the circumference of the lower surface of the gasket to having a single tab portion that encircles the entire circumference of the lower surface of the gasket.

[0061] An exemplary side perspective view 400 of poppet 208 is shown in Figure 4, which is based on cross-section A shown in Figure 3. An exemplary side perspective view 500 of poppet 208 is shown in Figure 5, which is based on cross-section B shown in Figure 3.

[0062] Figures 4 and 5 are corresponding side perspective views 400 and 500 of a poppet 208 with a gasket 218, according to an exemplary embodiment. Referring to Figure 4, when the gasket 218 is fully engaged with the poppet 208 (for example, when the tab portions 302 and 304 of the gasket 218 are snap-fitted into the coupling channel 216), the lower surface 222 of the gasket 218 substantially covers the upper surface 408 of the poppet 208. In some embodiments, the dimensions of the tab portions 302 and 304 (for example, the dimensions of the first section 312 and the second section 314 for each tab) can be configured to obtain one or more gaps between the surface of the gasket 218 and the surface of the coupling channel 216. For example, as shown in Figure 4, the dimensions of the tab portions 302 and 304 are configured to provide gaps 402, 404, and 406 that allow for thermal expansion of the gasket 218 (for example, during a cleaning cycle) without reducing the sealing ability of the gasket.

[0063] In some embodiments, the thickness of the gasket 218 can be configured such that the bending stress generated while the gasket is placed on the poppet 208 does not exceed a threshold amount. In some embodiments, the bending stress can be further adjusted by changing the lengths of the tab portions 302 and 304, respectively (for example, greater than or less than the circumference associated with a 45° angle).

[0064] Figure 5 shows a side perspective view 500 based on the cross section B shown in Figure 3. More specifically, the side perspective view 500 shows the tab portion 304 when the gasket 218 is fully engaged with the poppet 208 (for example, when the tab portions 302 and 304 of the gasket 218 are snap-fitted into the coupling channel 216).

[0065] Figures 3 to 5 illustrate the connecting channel 216 as a dovetail joint, but the disclosure is not limited to this, and other types of seating channel shapes (for example, the semicircular shape shown in Figure 7) can also be used.

[0066] In some examples, the shut-off valve 200 includes a valve body 202, a valve actuator 210, and a poppet having a gasket 218 made of polytetrafluoroethylene (PTFE) material. The poppet 208 is movable within the valve body 202 by the valve actuator 210 and holds the gasket 218 in a sealed engagement with an opposing surface 212 without the use of an O-ring.

[0067] In some examples, the poppet 208 includes a binding channel 216, and the gasket 218 is secured to the poppet 208 via the binding channel.

[0068] In some examples, the bonding channel 216 is configured on the plane of the top surface (or upper surface) of the poppet (e.g., top surface 408), and the plane of the top surface 408 of the poppet is substantially parallel to the plane of the opposing surface 212.

[0069] In some examples, the lower surface of the gasket (e.g., the lower surface 222) covers the upper surface 408 of the poppet, and the upper surface 220 of the gasket forms a sealing engagement with the opposing surface.

[0070] In some examples, the gasket 218 includes at least one tab portion (e.g., tab portions 302 and 304) positioned along the circumference of the lower surface of the gasket. At least one tab portion is configured to mate into a coupling channel to engage the gasket with the poppet.

[0071] In some embodiments, at least one tab portion includes a first tab portion 302 and a second tab portion 304. The first tab portion and the second tab portion are configured to face each other along the circumference of the lower surface of the gasket 218.

[0072] In some examples, the first tab portion 302 and the second tab portion 304 each consist of a length of approximately one-quarter of the circumference of the lower surface of the gasket 218.

[0073] In some examples, at least one tab portion includes a first section 312 with a first width 308, the first section protruding perpendicularly to the lower surface of the gasket.

[0074] In some examples, at least one tab portion includes a second section 314 with a second width 310, the second section projecting perpendicularly to the first section, and the first width 308 is smaller than the second width 310.

[0075] In some examples, at least one tab portion (e.g., a first tab portion 302 and / or a second tab portion 304) is configured to form at least one gap (e.g., one or more gaps 402-406) between the outer surface of at least one tab portion and the inner surface of the bonding channel.

[0076] In some examples, the poppet 208 and gasket 218 have a one-piece structure that consists solely of PTFE material or is constructed solely of PTFE material.

[0077] In some examples, the poppet 208 and gasket 218 have a one-piece structure that is partially composed of or partially constructed from PTFE material.

[0078] In some examples, two or more of the valve actuator 210, poppet 208, and gasket 218 can be constructed as a single unit partially made of PTFE material or partially constructed of PTFE material.

[0079] Figures 6 and 7 are side perspective views of exemplary poppets containing O-rings made of polytetrafluoroethylene (PTFE) material, according to exemplary embodiments. Referring to Figure 6, side perspective view 600 shows a poppet 208 having a dovetail-shaped bonding channel 216 configured to receive an O-ring 602 constructed of PTFE material. Referring to Figure 7, side perspective view 700 shows a poppet 208 having a semicircular bonding channel 702 configured to receive an O-ring 704 constructed of PTFE material.

[0080] Figure 8 is a block diagram showing an example of a machine 800 (such as controller 116 in Figure 1) that can implement or control one or more exemplary process embodiments described herein. In alternative embodiments, machine 800 may operate as a standalone device or be connected to other machines (e.g., network connection). In a network deployment, machine 800 may operate as a server machine, a client machine, or both in a server-client network environment. In one example, machine 800 may operate as a peer machine in a peer-to-peer (P2P) (or other distributed) network environment. Furthermore, although only a single machine 800 is shown, the term “machine” should also be interpreted to include any set of machines that individually or collectively execute one or more sets of instructions to implement any one or more of the methodologies discussed herein, via cloud computing, software as a service (SaaS), or other computer cluster configurations.

[0081] The examples described herein may include, or be operated by, logic, some components, or mechanisms. A circuit set is a collection of circuits implemented in a tangible entity, including hardware (e.g., simple circuits, gates, logic). The membership of a circuit set can be flexible to accommodate the passage of time and the variability of the underlying hardware. A circuit set includes members that can perform specific operations individually or in combination when in use. In one example, the hardware of a circuit set may be designed immutably to perform a specific operation (e.g., hardwired). In another example, the hardware of a circuit set may include variablely connected physical components (e.g., execution units, transistors, simple circuits) including a computer-readable medium that is physically modified (e.g., magnetically and electrically by the movable arrangement of invariant mass particles) to encode instructions for a specific operation. When connecting physical components, the underlying electrical properties of the hardware components are changed (e.g., from insulator to conductor, or vice versa). The instructions enable embedded hardware (e.g., execution units or loading mechanisms) to create members of the circuit set within the hardware via variable connections and perform a portion of a specific operation when in use. Therefore, the computer-readable medium is communicatively coupled to other components of the circuit set while the device is operating. In some examples, any one of the physical components may be used by multiple members of multiple circuit sets. For example, during operation, an execution unit may be used at one point in a first circuit of a first circuit set, and at another point reused by a second circuit in the first circuit set, or by a third circuit in the second circuit set.

[0082] The machine (e.g., a computer system) 800 may include a hardware processor 802 (e.g., a central processing unit (CPU), a hardware processor core, or any combination thereof), a graphics processing unit (GPU) 803, main memory 804, and static memory 806, some or all of which may communicate with each other via an interconnect (e.g., a bus) 808. The machine 800 may further include a display device 810, an alphanumeric input device 812 (e.g., a keyboard), and a user interface (UI) navigation device 814 (e.g., a mouse). In one example, the display device 810, the alphanumeric input device 812, and the UI navigation device 814 may be touchscreen displays. The machine 800 may further include a mass storage device (e.g., a drive unit) 816, a signal generation device 818 (e.g., a speaker), a network interface device 820, and one or more sensors 821 such as a Global Positioning System (GPS) sensor, a compass, an accelerometer, or another sensor. The machine 800 may include an output controller 828, such as a serial (e.g., Universal Serial Bus (USB)), parallel, or other wired or wireless (e.g., infrared (IR), near-field communication (NFC)) connection, for communicating with or controlling one or more peripheral devices (e.g., a printer, a card reader).

[0083] In exemplary embodiments, the hardware processor 802 can perform the functions of the controller 116 discussed herein.

[0084] The mass storage device 816 may include a machine-readable medium 822. This machine-readable medium 822 stores one or more sets of data structures or instructions 824 (e.g., software) that embody or are utilized by one or more of the technologies or functions described herein. The instructions 824 may also reside, fully or at least partially, in the main memory 804, static memory 806, hardware processor 802, or GPU 803 during execution by the machine 800. For example, the machine-readable medium may consist of one or any combination of the hardware processor 802, GPU 803, main memory 804, static memory 806, or mass storage device 816.

[0085] Although the machine-readable medium 822 is shown as a single medium, the term “machine-readable medium” may include a single medium or multiple mediums configured to store one or more instructions 824 (e.g., a centralized or distributed database, and / or associated caches and servers).

[0086] The term “machine-readable medium” may include any medium capable of storing, encoding, or carrying instructions 824 for execution by machine 800, and causing machine 800 to perform one or more of the technologies of this disclosure, or any medium capable of storing, encoding, or carrying data structures used by such instructions 824 or data structures related to such instructions 824. Non-limiting examples of machine-readable mediums may include solid memory, optical media, and magnetic media. In one example, a high-capacity machine-readable medium includes a machine-readable medium 822 having a plurality of particles having constant (e.g., stationary) mass. Thus, a high-capacity machine-readable medium is not a transiently propagating signal. Specific examples of high-capacity machine-readable mediums may include non-volatile memory such as semiconductor memory devices (e.g., electrically programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM)) and flash memory devices, magnetic disks such as internal hard disks and removable disks, magneto-optical disks, and CD-ROM and DVD-ROM disks.

[0087] Furthermore, instruction 824 can be transmitted or received via a communication network 826 using a transmission medium and through a network interface device 820.

[0088] The implementation of the aforementioned technologies can be achieved through any number of hardware and software specifications, configurations, or exemplary deployments. It should be understood that functional units or performance described herein may be referred to or labeled as components or modules to more specifically emphasize the independence of their implementations. Such components can be embodied in any number of software or hardware forms. For example, a component or module may be implemented as a hardware circuit including off-the-shelf semiconductors such as custom very large-scale integrated circuits (VLSIs), gate arrays, logic chips, transistors, or other individual components. A component or module may also be implemented in a programmable hardware device such as a field-programmable gate array, a programmable array logic, or a programmable logic device. A component or module may also be implemented in software for execution by various types of processors. An identified component or module of executable code may include, for example, one or more physical or logical blocks of computer instructions, which can be organized, for example, as objects, procedures, or functions. Nevertheless, the executable files of identified components or modules do not need to be physically located together, and may include heterogeneous instructions stored in different locations, which together logically combine to include the components or modules and achieve the stated purpose of the components or modules.

[0089] In practice, the components or modules of executable code may be a single instruction or a number of instructions, and may be distributed across several different code segments, between different programs, and across several memory devices or processing systems. In particular, some aspects of the described processes (such as code rewriting and code analysis) may be performed on a processing system different from the processing system in which the code is deployed (e.g., a computer embedded in a sensor or robot) (e.g., a computer in a data center). Similarly, operational data may be identified and illustrated within a component or module in this specification, embodied in any suitable form, and organized within any suitable type of data structure. Operational data may be collected as a single dataset, distributed across different locations including different storage devices, or at least partially exist simply as electronic signals on a system or network. The components or modules may comprise agents capable of performing desired functions and may be passive or active.

[0090] Throughout this specification, multiple examples may implement a component, operation, or structure described as a single example. While individual operations of one or more methods are illustrated and described as separate operations, one or more of these operations may be performed simultaneously, and the operations do not need to be performed in the order illustrated. Separate components, such as structures and functionalities presented as configurations, may be implemented as combined structures or components. Similarly, structures and functionalities presented as single components may be implemented as separate components. These and other variations, modifications, additions, and improvements are within the scope of this specification.

[0091] The embodiments described herein are described in sufficient detail so that those skilled in the art can implement the disclosed teachings. Other embodiments may be used and derived therefrom so that structural and logical substitutions and modifications can be made without departing from the scope of this disclosure. Accordingly, the embodiments for carrying out the invention should not be construed in a restrictive sense, and the scope of the various embodiments is defined only by the entire scope of the appended claims and the equivalents to which the claims are entitled.

[0092] Since embodiments may feature a subset of features, the claims may not describe all features disclosed herein. Furthermore, embodiments may include fewer features than those disclosed in a particular example. Accordingly, the following claims are incorporated into embodiments for carrying out the invention, and the claims stand independently as separate embodiments.

[0093] As used herein, the term “or” can be interpreted in either an inclusive or exclusive sense. Furthermore, multiple examples may be provided for a resource, operation, or structure described herein as a single example. Moreover, the boundaries between various resources, operations, modules, engines, and datastores are somewhat arbitrary, and certain operations are shown in the context of a particular exemplary configuration. Other assignments of functionality are conceivable and may fall within the scope of various embodiments of this disclosure. In general, structures and functionalities presented as separate resources in an exemplary configuration may be implemented as a combined structure or resource. Similarly, structures and functionalities presented as a single resource may be implemented as separate resources. These and other variations, modifications, additions, and improvements are within the scope of the embodiments of this disclosure presented by the appended claims. Accordingly, this specification and the drawings should be interpreted in an exemplary sense rather than an restrictive sense.

Claims

1. The valve body and Valve actuator and A poppet comprising a gasket made of polytetrafluoroethylene (PTFE) material, wherein the poppet is configured to move within the valve body by the valve actuator to (1) an engaged position in which at least a portion of the gasket is in contact with an opposing surface, or (2) an unengaged position in which the gasket is not in contact with the opposing surface, A shut-off valve equipped with a shut-off valve.

2. A shut-off valve according to claim 1, wherein the poppet comprises a coupling channel, and the gasket is fixed to the poppet via the coupling channel.

3. A shut-off valve according to claim 2, wherein the coupling channel is configured on the plane of the upper surface of the poppet, and the plane of the upper surface of the poppet is substantially parallel to the plane of the opposing surface.

4. A shut-off valve according to claim 3, wherein the lower surface of the gasket covers the upper surface of the poppet, and the upper surface of the gasket forms a sealed contact with the opposing surface.

5. A shut-off valve according to claim 2, wherein the gasket includes at least one tab portion arranged along the circumference of the lower surface of the gasket, the at least one tab portion being configured to fit into the coupling channel to secure the gasket to the poppet.

6. A shut-off valve according to claim 5, wherein the at least one tab portion includes a first tab portion and a second tab portion, and the first tab portion and the second tab portion are configured to face each other along the circumference of the lower surface of the gasket.

7. A shut-off valve according to claim 6, wherein the first tab portion and the second tab portion are each composed of a length of approximately one-quarter of the circumference of the lower surface of the gasket.

8. A shut-off valve according to claim 5, wherein the at least one tab portion includes a first division of a first width, the first division protruding perpendicularly to the lower surface of the gasket.

9. A shut-off valve according to claim 8, wherein the at least one tab portion includes a second section of a second width, the second section protrudes perpendicularly to the first section, and the first width is smaller than the second width.

10. A shut-off valve according to claim 5, wherein the at least one tab portion is configured to form at least one gap between the outer surface of the at least one tab portion and the inner surface of the coupling channel.

11. A shut-off valve according to any one of claims 1 to 10, wherein the poppet is configured to move within the valve body by the valve actuator without an O-ring.

12. A shut-off valve according to any one of claims 1 to 10, wherein the poppet and the gasket are composed solely of the PTFE material or include an integral structure constructed solely of the PTFE material.

13. A gasket for a shut-off valve, Includes a gasket made of polytetrafluoroethylene (PTFE) material, A gasket comprising at least one tab portion arranged along the circumference of the lower surface of the gasket, wherein the at least one tab portion is configured to fit into a coupling channel of the poppet of the shut-off valve to secure the gasket to the poppet.

14. A gasket according to claim 13, wherein the at least one tab portion includes a first tab portion and a second tab portion, and the first tab portion and the second tab portion are configured to face each other along the circumference of the lower surface of the gasket.

15. A gasket according to claim 14, wherein the first tab portion and the second tab portion are each composed of a length of approximately one-quarter of the circumference of the lower surface of the gasket.

16. A gasket according to claim 14, wherein the first tab portion and the second tab portion are each configured to be longer than approximately one-quarter of the circumference of the lower surface of the gasket.

17. A gasket according to any one of claims 13 to 16, wherein the at least one tab portion includes a first division of a first width, and the first division protrudes perpendicularly to the lower surface of the gasket.

18. A gasket according to claim 17, wherein at least one tab portion includes a second section of a second width, the second section protrudes perpendicularly to the first section, and the first width is smaller than the second width.

19. A gasket according to any one of claims 13 to 16, wherein the at least one tab portion is configured to form at least one gap between the outer surface of the at least one tab portion and the inner surface of the bonding channel.

20. A method for operating a shut-off valve, Moving a poppet equipped with a polytetrafluoroethylene (PTFE) gasket to a non-engaged position where the gasket is not in contact with the opposing surface, While the poppet is in the disengaged position, process gas is supplied to the processing chamber via the gas supply line. After a predetermined amount of the process gas is supplied to the processing chamber, the poppet, which is equipped with a gasket made of PTFE material, is moved to the engagement position. Includes, A method wherein at least a portion of the gasket is in contact with the opposing surface at the engagement position.

21. The method according to claim 20, Supplying cleaning gas or purging gas to the processing chamber via the gas supply line, The poppet is moved between the disengaged position and the engaged position to control the amount of the cleaning gas or the purge gas entering the processing chamber. Methods that further include this.

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