Substrate processing equipment

Abstract

A substrate processing apparatus is disclosed. This substrate processing apparatus includes a housing that defines a processing space, a lower electrode unit that supports a substrate, an upper electrode unit that is spaced apart from the lower electrode unit with the substrate in between, a gas supply unit that supplies a process gas for plasma processing the edge region of the substrate, and a protective layer made of a material with high plasma resistance that is disposed on at least some of the surfaces of the lower electrode unit and the upper electrode unit.

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that processes a substrate using plasma.

Background Art

[0002] Plasma means an ionized gaseous state composed of ions, radicals, electrons, etc. Plasma can be generated by extremely high temperatures, strong electric fields, or high-frequency electromagnetic fields (RF Electromagnetic Fields). The manufacturing process of semiconductor devices may include an etching process that removes a thin film on a substrate using plasma. The etching process can be carried out by the ions and radical particles contained in the plasma colliding with or reacting with the film on the substrate.

[0003] An apparatus for processing a substrate using plasma supplies a process gas to a processing space and excites the process gas to generate plasma. Plasma can collide not only with the substrate but also with components inside the housing. There may occur a problem that components included in the substrate processing apparatus collide with the plasma and are etched.

Summary of the Invention

Problems to be Solved by the Invention

[0004] The problem to be solved by the present invention is to provide a substrate processing apparatus that can reduce the damage of components due to reaction with plasma.

[0005] Another problem to be solved by the present invention is to provide a substrate processing apparatus that can increase the service life.

[0006] Another problem to be solved by the present invention is to provide a substrate processing apparatus that can provide uniform process performance for the substrate.

[0007] The problems that this invention aims to solve are not limited to those described above, and any problems not mentioned will be clearly understood by those with ordinary skill in the art from this specification and the accompanying drawings. [Means for solving the problem]

[0008] The present invention includes: a housing that defines a processing space according to one embodiment; a lower electrode unit disposed in the processing space and supporting a substrate; an upper electrode unit disposed spaced apart from the lower electrode unit with the substrate in between; a gas supply unit that supplies a process gas for plasma processing the edge region of the substrate; and a protective layer disposed on at least a portion of the surfaces of the lower electrode unit and the upper electrode unit, made of a material having higher plasma resistance than the lower electrode unit and the upper electrode unit.

[0009] Furthermore, the protective layer may consist of a substance containing at least two of the following: Nd, Pm, Sm, Gd, Y, Sc, Er, F, and O.

[0010] Furthermore, the protective layer may consist of a substance containing at least three of the following: Nd, Pm, Sm, Gd, Y, Sc, Er, F, and O.

[0011] Furthermore, the protective layer may include at least one of YF3 and Y2O3 as a matrix, and at least one of Nd, Pm, Sm, Gd, Sc, and Er as a dopant.

[0012] Furthermore, the thickness of the protective layer is between 50 μm and 150 μm.

[0013] The upper electrode unit includes a dielectric plate arranged in the thickness direction of the substrate, overlapping with a portion of the substrate, and the protective layer may include a first protective layer arranged on the lower surface of the dielectric plate.

[0014] Furthermore, the thickness of the first protective layer is non-uniform.

[0015] Furthermore, a step may be formed on the lower surface of the dielectric plate.

[0016] Furthermore, the lower surface of the dielectric plate may include a first lower surface spaced approximately a first distance apart from the substrate; a second lower surface spaced approximately a second distance apart from the substrate, which is wider than the first distance apart; and an interface surface connecting the first and second lower surfaces, having a first rounded surface that is convex toward the processing space.

[0017] Furthermore, the first round surface is also the interface surface that is in contact with the first lower surface.

[0018] Furthermore, the first protective layer may include a first sub-protective layer disposed on the first lower surface; a second sub-protective layer disposed on the second lower surface; and a third sub-protective layer disposed on the interface phase.

[0019] Furthermore, the thickness of the second sub-protective layer is greater than the thickness of the first sub-protective layer.

[0020] Furthermore, the thickness of the third sub-protective layer may decrease from one sub-protective layer to the other.

[0021] Furthermore, the third sub-protective layer may have a second round surface that is convex toward the processing space.

[0022] Furthermore, the radius of curvature of the second round surface is greater than or equal to the radius of curvature of the first round surface.

[0023] Furthermore, the radius of curvature of the second round surface is 10 mm or less.

[0024] Furthermore, the distance between the substrate and the first sub-protective layer can be adjusted in accordance with the radius of curvature of the second round surface.

[0025] Furthermore, the distance between the substrate and the first sub-protective layer can be adjusted so as to be inversely proportional to the radius of curvature of the second round surface.

[0026] Further, it may further include an optical sensor disposed on the housing for obtaining the radius of curvature of the second round surface using light.

[0027] And the optical sensor may include a light irradiation unit that irradiates the light toward the second round surface; and a photodetector that detects the light that has not been blocked by the second round surface and has traveled through the processing space.

Advantages of the Invention

[0028] According to one embodiment, the substrate processing apparatus can prevent damage to components by disposing a protective layer with high plasma resistance on components that may collide with plasma in the housing.

[0029] According to one embodiment, the service life of the protective layer can be extended by increasing the thickness of the region of the protective layer that is highly likely to collide with plasma.

[0030] According to one embodiment, by adjusting the distance between the substrate and the protective layer according to the radius of curvature of the protective layer, a uniform process capability with respect to the substrate can be maintained.

[0031] According to one embodiment, by adjusting the distance between the substrate and the protective layer according to the radius of curvature of the protective layer, the service life of the protective layer can be extended.

[0032] According to one embodiment, by adjusting the distance between the substrate and the protective layer according to the radius of curvature of the protective layer, a uniform process capability with respect to the substrate can be maintained.

[0033] According to one embodiment, by adjusting the distance between the substrate and the protective layer according to the radius of curvature of the protective layer, the maintenance cost of the substrate processing apparatus can be reduced.

[0034] The effects are not limited to those described above, and effects not mentioned will be clearly understood by those of ordinary skill in the technical field to which the present invention pertains from the present specification and the accompanying drawings.

Brief Description of the Drawings

[0035] [Figure 1] This is a schematic diagram showing a substrate processing facility according to one embodiment.

[0036] [Figure 2] This is a drawing showing one embodiment of a substrate processing apparatus provided in the process chamber shown in Figure 1.

[0037] [Figure 3] Block diagram of a controller according to one embodiment.

[0038] [Figure 4] Figure 2 is a diagram illustrating an example of a substrate processing apparatus performing a plasma processing step.

[0039] [Figure 5] This is an experimental result showing the degree of particle generation over time in a dielectric plate without a protective layer coating and a dielectric plate with a protective layer coating according to one embodiment.

[0040] [Figure 6] This is a drawing showing a substrate processing apparatus including a dielectric plate with a stepped surface according to one embodiment.

[0041] [Figure 7] This drawing shows a substrate processing apparatus including a first protective layer having a non-uniform thickness according to one embodiment.

[0042] [Figure 8A] This is a drawing showing a substrate processing apparatus including an optical sensor according to one embodiment.

[0043] [Figure 8B] This diagram schematically shows the relationship between the second round surface and the optical sensor.

[0044] [Figure 9]This is a flowchart illustrating a method for adjusting the distance between the first sub-protective layer and the substrate using a second radius of curvature according to one embodiment. [Modes for carrying out the invention]

[0045] The following exemplary embodiments will be described in detail with reference to the attached drawings. In the following drawings, the same reference numerals refer to the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience of explanation. On the other hand, the embodiments described below are merely illustrative, and various modifications are possible from such embodiments.

[0046] In the following, the terms "above" and "upper" may include not only those directly above, below, to the left, and to the right upon contact, but also those above, below, to the left, and to the right without direct contact. A singular expression may include multiple expressions unless the context clearly indicates otherwise. Or, when a part "contains" a component, this may mean that it includes other components, rather than excluding them, unless otherwise stated.

[0047] The use of the term "the foregoing" and similar referential terms can be both singular and plural. Unless explicitly stated or otherwise indicated, the steps constituting a method are performed in any order and are not necessarily limited to the order stated.

[0048] Alternatively, terms such as "...part" or "module" as used in the specification mean a unit that performs at least one function or operation, which may be embodied as hardware or software, or by a combination of hardware and software.

[0049] The lines or connecting members between components shown in the drawings exemplify functional and / or physical or circuit connections, and in actual devices, they may be substituted or represent a further variety of functional, physical, or circuit connections.

[0050] Expressions like "at least one" that precede an element list limit the overall element list, not individual elements within the list. For example, expressions like "at least one of A, B, and C" or "at least one selected from the group consisting of A, B, and C" can be interpreted as A only, B only, C only, or two or more combinations of A, B, and C, such as ABC, AB, BC, and AC.

[0051] When “approximately” or “substantially” is used in relation to a numerical value, the numerical value may be interpreted to include a manufacturing or operational deviation (e.g., ±10%) near the specified numerical value. Alternatively, when the terms “generally” and “substantially” are used in relation to a geometric shape, it may be intended that geometric precision is not required and the tolerance for the shape is within the scope of this embodiment. Or, regardless of whether a numerical value or shape is limited to “approximately” or “substantially,” such values ​​and shapes may be interpreted to include a manufacturing or operational deviation (e.g., ±10%) near the specified numerical value.

[0052] Terms such as "First," "Second," etc., may be used to describe various components, but the components should not be limited by these terms. Terms may be used solely to distinguish one component from others.

[0053] All use of example or illustrative terms is solely for the purpose of illustrating a technical idea and is not limited by such example or illustrative terms unless otherwise specified by the claims.

[0054] The following will be described in detail by embodiments that are merely illustrative, based on the attached drawings.

[0055] Figure 1 is a schematic diagram showing a substrate processing equipment according to one embodiment. Referring to Figure 1, the substrate processing equipment 1 may include an equipment front end module (EFEM) 20 and a processing module 30. The equipment front end module 20 and the processing module 30 may be arranged in one direction.

[0056] The equipment front end module 20 may include a load port 10 and a transfer frame 21. The load port 10 may be located in front of the equipment front end module 20 in a first direction 11. The load port 10 may include a plurality of support sections 6. Each of the plurality of support sections 6 may be arranged in a line in a second direction 12 and may support a carrier 4 (e.g., a cassette, FOUP (Front Opening Unified Pod), etc.) containing substrates W to be supplied to the process and substrates W after the process has been completed. The carrier 4 may contain substrates W to be supplied to the process and substrates W after the process has been completed.

[0057] The transfer frame 21 may be positioned between the load port 10 and the processing module 30. The transfer frame 21 may include a first transfer robot 25 that transfers the substrate W between the load port 10 and the processing module 30. The first transfer robot 25 may move along a transfer rail 27 provided in a second direction 12 to transfer the substrate W between the carrier 4 and the processing module 30.

[0058] The processing module 30 may include a load lock chamber 40, a transfer chamber 50, and a process chamber 60. The processing module 30 can receive substrates W from the equipment front end module 20 and process the substrates W.

[0059] The load lock chamber 40 may be positioned adjacent to the transfer frame 21. For example, the load lock chamber 40 may be positioned between the transfer chamber 50 and the equipment front end module 20. The load lock chamber 40 may provide a waiting space for substrates W to be transferred to the process chamber 60 before being transferred to the process chamber 60, or for substrates W that have completed processing before being transferred to the equipment front end module 20.

[0060] The transfer chamber 50 can transport substrates W. The transfer chamber 50 may be positioned adjacent to the load lock chamber 40. In a top view, the transfer chamber 50 has a polygonal body. Referring to Figure 1, the transfer chamber 50 has a pentagonal body in a top view. On the outside of the body, the load lock chamber 40 and a number of process chambers 60 may be arranged around the body. Each side wall of the body has passages (not shown) through which substrates W enter and exit, and these passages may connect the transfer chamber 50 to the load lock chamber 40 or the process chambers 60. Each passage may be provided with a door (not shown) to open and close the passage and seal the interior.

[0061] A second transfer robot 53 may be positioned inside the transfer chamber 50 to transfer substrates W between the load lock chamber 40 and the process chamber 60. The second transfer robot 53 can transfer unprocessed substrates W waiting in the load lock chamber 40 to the process chamber 60, or transfer processed substrates W back to the load lock chamber 40. Alternatively, the second transfer robot 53 can load substrates W into the processing space 102 of the housing 100 (described later) or unload substrates W from the processing space 102.

[0062] Alternatively, the second transfer robot 53 may transfer the substrate W between process chambers 60 to sequentially supply the substrate W to multiple process chambers 60. As shown in Figure 1, when the transfer chamber 50 has a pentagonal body, load lock chambers 40 may be arranged on the side walls adjacent to the front end module 20 of the equipment, and process chambers 60 may be arranged continuously on the remaining side walls. The transfer chamber 50 can be provided in a variety of forms, not only in the shape described above, but also depending on the required process module.

[0063] The process chamber 60 may be positioned adjacent to the transfer chamber 50. The process chamber 60 may be positioned around the transfer chamber 50. Multiple process chambers 60 may be provided. Process processing can be performed on the substrate W within each process chamber 60. The process chamber 60 may receive the substrate W from the second transfer robot 53, perform process processing on it, and then provide the processed substrate W to the second transfer robot 53. The process processing performed in each process chamber 60 may differ from that performed in each process chamber 60.

[0064] The following describes the substrate processing apparatus 1000 that performs the plasma process within the process chamber 60. The substrate processing apparatus 1000 will be described as being configured to perform a plasma processing step on the edge region of the substrate W within the process chamber 60, as an example. However, it is not limited to this configuration. The substrate processing apparatus 1000 can be applied identically or similarly to a variety of chambers in which processing is performed on the substrate W. It goes without saying that the substrate processing apparatus 1000 is applicable identically or similarly to a variety of chambers in which a plasma processing step is performed on the substrate W.

[0065] Figure 2 is a drawing showing one embodiment of the substrate processing apparatus 1000 provided in the process chamber of Figure 1. Referring to Figure 2, the substrate processing apparatus 1000 provided in the process chamber 60 can perform predetermined processes on a substrate W using plasma. For example, the substrate processing apparatus 1000 can etch or ash a film on the substrate W.

[0066] The film material can be of various types, including polysilicon films, silicon oxide films, and silicon nitride films. Alternatively, the film material can be a native oxide film or a chemically produced oxide film. The film material can also be a by-product generated during the processing of the substrate W. The film material can also be an impurity that adheres to and / or remains on the substrate W.

[0067] The substrate processing apparatus 1000 can perform plasma processes on the substrate W. For example, the substrate processing apparatus 1000 can supply a process gas and generate plasma from the supplied process gas to process the substrate W. The substrate processing apparatus 1000 can supply a process gas and generate plasma from the supplied process gas to process the edge regions of the substrate W. Hereinafter, the substrate processing apparatus 1000 will be described as a bevel etching apparatus that performs etching on the edge regions of the substrate W as an example.

[0068] The substrate processing apparatus 1000 may include a housing 100, a lower electrode unit 200, an upper electrode unit 300, and a gas supply unit 400.

[0069] The housing 100 may define a processing space 102. The housing 100 may include an upper housing 110 (or a first housing) and a lower housing 120 (or a second housing). The upper housing 110 and the lower housing 120 may be combined to define the processing space 102. The upper housing 110 may also be rotatably fastened to the lower housing 120 by a rotary coupling (not shown). For example, the upper housing 110 and the lower housing 120 may be fastened by a rotary coupling that is also a hinge mechanism.

[0070] The upper housing 110 is either in an open position or a closed position. Hereinafter, the position in which the upper housing 110 is combined with the lower housing 120 to define the processing space 102 will be referred to as the closed position, and the position in which the upper housing 110 exposes the processing space 102 to the outside will be referred to as the open position.

[0071] Furthermore, when the upper housing 110 is in the closed position, the atmosphere of the processing space 102 is isolated from the outside, and the isolated processing space 102 can be adjusted to a low-pressure state close to a vacuum (vacuum pressure atmosphere) while the substrate W is being processed. The housing 100 may be made of a material including metal. The inner surface of the housing 100 may be coated with an insulating material. The housing 100 may also be grounded.

[0072] Furthermore, the housing 100 also functions as a vacuum chamber. For example, an exhaust hole 104 may be formed on the bottom surface of the housing 100. Plasma P generated in the processing space 102 or gases G1 and G2 supplied to the processing space 102 can be exhausted to the outside through the exhaust hole 104. By-products generated during the process of processing the substrate W using plasma P can also be exhausted to the outside through the exhaust hole 104. The exhaust hole 104 may also be connected to an exhaust line (not shown). The exhaust line may be connected to a pressure reducing member that provides reduced pressure. The pressure reducing member can provide reduced pressure to the processing space 102 via the exhaust line.

[0073] The lower electrode unit 200 may support the substrate W from the processing space 102. The lower electrode unit 200 may include a chuck 210. The chuck 210 may support the substrate W from the processing space 102. The chuck 210 may have a support surface for supporting the substrate W. The chuck 210 may be circular in top view. The chuck 210 may have a smaller diameter than the substrate W in top view. Therefore, the central region of the substrate W supported by the chuck 210 rests on the support surface of the chuck 210, and the edge regions of the substrate W may come into contact with the support surface of the chuck 210.

[0074] A heating means (not shown) may be provided inside the chuck 210. The heating means (not shown) can heat the chuck 210. The heating means is also a heater. Alternatively, a cooling channel 212 may be formed in the chuck 210. The cooling channel 212 may be formed inside the chuck 210. A cooling fluid supply line 214 and a cooling fluid discharge line 216 may be connected to the cooling channel 212. The cooling fluid supply line 214 may be connected to a cooling fluid source 218. The cooling fluid source 218 may store and / or supply cooling fluid to the cooling fluid supply line 214. Alternatively, the cooling fluid supplied to the cooling channel 212 may be discharged to the outside via the cooling fluid discharge line 216.

[0075] The cooling fluid stored and / or supplied by the cooling fluid source 218 is either cooling water or cooling gas. Alternatively, the shape of the cooling channel 212 formed in the chuck 210 is not limited to the shape shown in Figure 2, but can be varied. Alternatively, the configuration for cooling the chuck 210 is not limited to a configuration for supplying a cooling fluid, but can be provided in a variety of configurations capable of cooling the chuck 210 (e.g., a cooling plate).

[0076] The lower electrode unit 200 may further include a power supply component 220. The power supply component 220 may supply RF (Radio Frequency) power to the chuck 210. The power supply component 220 may include a power supply 222, a matching unit 224, and a power line 226. The power supply 222 is also a bias power supply. Alternatively, the power supply 222 is also an RF power supply. The power supply 222 may be connected to the chuck 210 via the power line 226. Alternatively, the matching unit 224 may be supplied to the power line 226 to perform impedance matching.

[0077] The lower electrode unit 210 may further include an insulating ring 230. The insulating ring 230 may be provided so as to have a ring shape when viewed from above. The insulating ring 230 may be configured to surround the chuck 210 when viewed from above.

[0078] For example, the insulating ring 230 may have a ring shape. The insulating ring 230 may be made of an insulating material. The insulating ring 230 can electrically isolate the lower edge electrode 250 (described later) from the chuck 210. The chuck 210 may be made of a material containing metal. The insulating ring 230 may be made of an insulating material such as ceramic.

[0079] Furthermore, the upper surface of the insulating ring 230 may have a stepped shape. The height of the inner upper surface of the insulating ring 230 adjacent to the central region of the substrate W is higher than the height of the outer upper surface of the insulating ring 230 that is farther from the central region of the substrate W. The inflow of plasma P, described later, is relatively smooth in the upper region of the outer upper surface of the insulating ring 230, while the inflow of plasma P is blocked or suppressed in the upper region of the inner upper surface of the insulating ring 230, which can further improve the processing efficiency for the edge region of the substrate W.

[0080] The lower electrode unit 210 may further include a lower edge electrode 250. The lower edge electrode 250 may be configured to surround the insulating ring 230 in a top view. The lower edge electrode 250 may have a ring shape in a top view. The lower edge electrode 250 may be grounded. The lower edge electrode 250 may be positioned in a location in a top view where plasma P can be generated in the edge region of the substrate W supported by the chuck 210. For example, the edge region of the substrate W in the thickness direction of the substrate W may be superimposed on the lower edge electrode 250.

[0081] The lower electrode unit 210 may further include an actuator 260 and a shaft 270. The actuator 260 and the shaft 270 can work together to raise and lower the chuck 210. The shaft 270 may be coupled to the chuck 210. The shaft 270 may be connected to the actuator 260. The actuator 260 can raise and lower the chuck 210 in the vertical direction via the shaft 270. By raising and lowering the chuck 210 with the actuator 260, the distance between the upper surface of the substrate W supported by the chuck 210 and the first protective layer 510 located on the upper electrode unit 300, which will be described later, can be adjusted.

[0082] The upper electrode unit 300 may be provided facing the lower electrode unit 200. The upper electrode unit 300 may be provided facing the upper surface of the substrate W supported by the lower electrode unit 200.

[0083] The upper electrode unit 300 may include a dielectric plate 310. The dielectric plate 310 may be positioned facing the upper surface of the substrate W supported by the chuck 210 from the processing space 102. The dielectric plate 310 may be positioned on top of the lower electrode unit 200. The dielectric plate 310 may be made of a material including ceramic.

[0084] A flow path may be formed in the dielectric plate 310, which is connected to the first gas supply section 410 of the gas supply unit 400, which will be described later. The discharge end 422 of the first gas may be configured so that the first gas G1 supplied by the first gas supply section 410 is supplied to the central region of the substrate W supported by the lower electrode unit 200. Alternatively, the discharge end 422 may be configured so that the first gas G1 is supplied to the upper surface of the central region of the substrate W supported by the support body 330.

[0085] The upper electrode unit 300 may further include an upper edge electrode 320. The upper edge electrode 320 may be positioned opposite the lower edge electrode 250. The upper edge electrode 320 may have a ring shape when viewed from above. The upper edge electrode 320 is also a counter electrode that faces the lower edge electrode 250.

[0086] The upper edge electrode 320 may be provided so as to surround the dielectric plate 310 in a top view. The upper edge electrode 320 may have a ring shape in a top view. The upper edge electrode 320 may be provided so as to be spaced apart from the dielectric plate 310 in a top view. The inner circumference of the upper edge electrode 320 and the outer circumference of the dielectric plate 310 can be combined to define a second gas discharge end 442 for supplying process gas to the edge region of the substrate W.

[0087] The upper electrode unit 300 may further include a support body 330. The support body 330 may support the dielectric plate 310 and the upper edge electrode 320. The support body 330 may fix the dielectric plate 310 and the upper edge electrode 320 to the housing 100. The support body 330 may be made of a material including metal. The support body 330 may be grounded. The support body 330 may be electrically connected to the housing 100 and grounded. The support body 330 may be combined with the dielectric plate 310 to form a gas channel.

[0088] The support body 330 may include an edge lower surface 331 and an intermediate lower surface 332. In a top view, the edge lower surface 331 may be adjacent to the edge region of the substrate W, and the intermediate lower surface may be adjacent to the intermediate region of the substrate W. The intermediate lower surface 332 may be formed in a concave shape extending upward from the lower surface of the support body 330. In a top view, the edge lower surface 331 may have a substantially ring shape. An upper edge electrode 320 may be provided on the edge lower surface 331.

[0089] The intermediate lower surface 332 of the support body 330 and the dielectric plate 310 can be combined to define a gas channel. The gas channel can perform the function of a gas flow path through which the process gas supplied to the second gas supply unit 430 flows toward the edge region of the substrate W. The gas channel can be in fluid communication with the second gas discharge end 442, which will be described later. The gas channel can be in fluid communication with the processing space 102.

[0090] A protective layer 500 may be placed on the surface of at least one of the lower electrode unit 200 and the upper electrode unit 300. The protective layer 500 can prevent the lower electrode unit 200 and the upper electrode unit 300 from being damaged by the plasma. If at least one of the lower electrode unit 200 and the upper electrode unit 300 is damaged by the plasma and deformation occurs, or if impurities such as particles are generated, it can affect the process of the substrate W, and impurities may adhere to the substrate W, increasing the defect rate of the substrate W.

[0091] The protective layer 500 may be formed from a different material than the lower electrode unit 200 and the upper electrode unit 300. The protective layer 500 may be formed from a material having higher plasma resistance than the lower electrode unit 200 and the upper electrode unit 300. Here, plasma resistance means corrosion resistance or erosion resistance.

[0092] The protective layer 500 may consist of a material containing at least two of Nd, Pm, Sm, Gd, Y, Sc, Er, F, and O. Alternatively, the protective layer 500 may consist of a material containing at least three of Nd, Pm, Sm, Gd, Y, Sc, Er, F, and O. Alternatively, the protective layer 500 may contain at least one of YF3 and Y2O3 as a matrix and at least one of Nd, Pm, Sm, Gd, Sc, and Er as a dopant. The more material components the protective layer 500 contains, the lower the probability of plasma reaction with specific substances can be, thereby increasing plasma resistance. The more material components the protective layer 500 contains, the higher the sinterability of the protective layer 500 can be, thereby reducing impurity generation by plasma.

[0093] The protective layer 500 may be coated by atmospheric plasma spraying (APS). However, it is not limited to this method, and the protective layer 500 may also be coated by aerosol, cold spray, or oxalic acid methods.

[0094] As illustrated in the drawings, the protective layer 500 may be positioned on the top and sides of the lower electrode unit 200 and on the bottom and sides of the upper electrode unit 300. For example, the protective layer 500 may include, but is not limited to, a first protective layer 510 positioned on the bottom and sides of the dielectric plate 310, a second protective layer 520 positioned on the bottom and sides of the upper edge electrode 320, a third protective layer 530 positioned on the top of the chuck 210, a fourth protective layer 540 positioned on the top of the insulating ring 230, and a fifth protective layer 550 positioned on the top and sides of the lower edge electrode 250.

[0095] The protective layer 500 may be placed only in areas where plasma is concentrated. For example, the protective layer 500 does not include the third protective layer 530 which is placed on the upper surface of the chuck 210 of the lower electrode unit 200. This is because, once the substrate W is placed on the chuck 210, the probability of plasma flowing onto the upper surface of the chuck 210 is low. Therefore, the third protective layer 530 does not need to be formed on the upper surface of the chuck 210. Alternatively, the protective layer 500 is not placed on the side surface of the dielectric plate 310 of the upper electrode unit 300. This is because, between the dielectric plate 310 and the upper edge electrode 320, the probability of the second gas G2 flowing out and plasma flowing in is low.

[0096] The protective layer 500 placed on the lower electrode unit 200 and the upper electrode unit 300 may be formed from the same material, but is not limited to that. For example, protective layers 510 and 540 may be placed on the dielectric plate 310 and the insulating ring 230, made of a material containing at least one of Y2O3 and YF3 as a matrix and at least one of Nd, Pm, Sm, Gd, Sc, and Er as a dopant. Then, protective layers 520 and 550 may be placed on the lower edge electrode 250 and the upper edge electrode 320, made of a material containing Al2O3 as a matrix and at least one of Nd, Pm, Sm, Gd, Sc, and Er as a dopant. If the lower edge electrode 250 and the upper edge electrode 320 contain metal, the protective layers 520 and 550 may also contain metal to improve adhesion.

[0097] As the substrate processing apparatus 1000 operates and the number of process cycles increases, the protective layer 500 can also be damaged, even if the rate of damage is slow. If the thickness of the protective layer 500 is excessively thin, there is a problem that the recoating cycle of the protective layer 500 will be shortened. Therefore, the protective layer 500 needs to have a recoating cycle of a certain period or longer. In one embodiment, the thickness of the protective layer 500 is about 50 μm or more.

[0098] On the other hand, the protective layer 500 is positioned on the lower surface of the upper edge electrode 320 and the upper surface of the lower edge electrode 250. If the thickness of the protective layer 500 is excessively thick, it may hinder the formation of an electric field by the upper edge electrode 320 and the lower edge electrode 250. Therefore, the thickness of the protective layer 500 is also approximately 150 μm or less. For example, the thickness of the protective layer 500 is also approximately 50 μm to 150 μm, or approximately 80 μm to 120 μm.

[0099] The gas supply unit 400 can supply gas to the processing space 102. The gas supply unit 400 can supply a first gas G1 and a second gas G2 to the processing space 102. The gas supply unit 400 may include a first gas supply section 410, a first gas supply line 420, a second gas supply section 430, and a second gas supply line 440.

[0100] The first gas supply unit 410 can supply the first gas G1 to the processing space 102. The first gas G1 is also an inactive gas such as nitrogen or argon. The first gas supply unit 410 can supply the first gas G1 to the central region of the substrate W supported by the chuck 210. The first gas supply unit 410 can supply the first gas G1 to the first gas supply line 420. One end of the first gas supply line 420 is connected to the first gas supply unit 410, and the other end can be in fluid communication with the first gas discharge end 422 formed in the central region of the dielectric plate 310. The first gas G1 supplied by the first gas supply unit 410 can be supplied to the central region of the substrate W via the first gas supply line 420. The first gas G1 supplied by the first gas supply unit 410 can be supplied to the space between the dielectric plate 310 and the substrate W via the first gas supply line 420.

[0101] The second gas supply unit 430 can supply the second gas G2 to the processing space 102. The second gas G2 is also a process gas that is excited into a plasma state. The second gas G2 is also a process gas that is a mixture of several different types of gases. For example, the second gas supply unit 430 may be configured to supply the second gas G2 containing at least two of O2, N2, Ar, SF6, and CF4. The second gas supply unit 430 can supply the second gas G2 to the second gas supply line 440. One end of the second gas supply line 440 is connected to the second gas supply unit 430, and the other end may be in fluid communication with the second gas discharge end 442. The second gas G2, which is a mixed gas supplied by the second gas supply unit 430, may be supplied to the edge region of the substrate W via the second gas supply line 440.

[0102] A substrate processing apparatus 1000 according to one embodiment may further include a controller 900. The controller 900 can control the substrate processing apparatus 1000 to perform the plasma processing steps to be performed. For example, the controller 900 can control a gas supply unit 400 and an actuator 260, etc. Specifically, when supplying gas to the first gas supply unit 410 and / or the second gas supply unit 430, the controller 900 can control the gas supply unit 400 so that the power supply 222 applies power to the chuck 210 to generate plasma P in the edge region of the substrate W supported by the chuck 210.

[0103] Figure 3 is a block diagram showing a controller 900 according to one embodiment. Referring to Figure 3, the controller 900 may include a communication unit 910 that communicates with components of the substrate processing apparatus 1000, such as the first gas supply unit 410, the second gas supply unit 430, and the actuator 260; a memory 920 that stores control programs executed by the substrate processing apparatus 1000, various data, and processing recipes; a user interface 930 into which user commands from designers, operators, etc., who use the substrate processing apparatus 1000 are input; an output unit 940 that outputs information related to the processing process and / or current state of the substrate processing apparatus 1000; and a processor 950 that performs overall control of the substrate processing apparatus 1000.

[0104] The communication unit 910 is either a wired communication module or a wireless communication module. The user interface 930 is a keyboard, buttons, touchpad, etc., and the memory 920 is a hard disk, a flexible disk such as a CD-ROM or DVD, or flash memory 920, etc. The output unit 940 is a display, speaker, light source, etc.

[0105] The controller 900 can control one substrate processing apparatus 1000, or it can control multiple substrate processing apparatuses 1000. Alternatively, the controller 900 can control not only the substrate processing apparatus 1000, but the entire substrate processing equipment 1 shown in Figure 1.

[0106] Figure 4 is a diagram showing an example of the substrate processing apparatus 1000 of Figure 2 performing a plasma processing step. Referring to Figure 4, the substrate processing apparatus 1000 according to one embodiment can generate plasma P in the edge region of the substrate W and process the edge region of the substrate W. When the substrate processing apparatus 1000 processes the edge region of the substrate W, the first gas supply unit 410 can supply a first gas G1 to the central region of the substrate W, and the second gas supply unit 430 can supply a second gas G2 to the edge region of the substrate W. The second gas G2 supplied by the second gas supply unit 430 is a process gas and can be excited to a plasma P state and process the edge region of the substrate W. For example, a thin film on the edge region of the substrate W can be etched by the plasma P.

[0107] Furthermore, the first gas G1 supplied to the central region of the substrate W is an inactive gas, and the first gas G1 prevents the second gas G2 from flowing into the central region of the substrate W, thereby further improving the processing efficiency for the edge regions of the substrate W. In order for the bevel etching process on the substrate W to be carried out, the shaft 270 can move the chuck 210 upward, narrowing the gap between the substrate W and the first protective layer 510.

[0108] The plasma generated by the substrate processing apparatus 1000 can etch not only the edge regions of the substrate W, but also the lower electrode unit 200 and the upper electrode unit 300. In one embodiment, the substrate processing apparatus 1000 has a protective layer 500 containing a material with high plasma resistance coated on at least a portion of the surfaces of the lower electrode unit 200 and the upper electrode unit 300. Therefore, it is possible not only to prevent damage to the lower electrode unit 200 and the upper electrode unit 300, but also to increase the processing yield of the substrate W.

[0109] The protective layer 500 may consist of a substance containing at least two of Nd, Pm, Sm, Gd, Y, Sc, Er, F, and O. Alternatively, the protective layer 500 may consist of a substance containing at least three of Nd, Pm, Sm, Gd, Y, Sc, Er, F, and O. Alternatively, the protective layer 500 may contain at least one of YF3 and Y2O3 as a matrix and at least one of Nd, Pm, Sm, Gd, Sc, and Er as a dopant.

[0110] Alternatively, protective layers 510 and 540 placed on the dielectric plate 310 and insulating ring 230 may include at least one of YF3 and Y2O3 as a matrix and at least one of Nd, Pm, Sm, Gd, Sc, and Er as a dopant, and protective layers 520 and 550 placed on the lower edge electrode 250 and upper edge electrode 320 may include Al2O3 as a matrix and at least one of Nd, Pm, Sm, Gd, Sc, and Er as a dopant.

[0111] Figure 5 shows experimental results illustrating the degree of particle generation over time in a dielectric plate without a protective layer coating and a dielectric plate with a protective layer coating according to one embodiment. Yttria (Y2O3) was coated as a protective layer on the surface of a dielectric plate 310 formed on alumina (Al2O3).

[0112] As illustrated in Figure 5, in dielectric plates without a protective coating, it can be observed that the number of particles increases sharply after an RF on time of 0.3 hours. However, in dielectric plates coated with a protective layer made of yttria, it can be observed that the number of particles does not increase sharply even as the RF on time increases.

[0113] In one embodiment of the substrate processing apparatus, a certain range of space may exist near the edge region of the substrate W in order to activate the plasma.

[0114] Figure 6 is a drawing showing a substrate processing apparatus 1000a including a dielectric plate 310 with a step formed thereon according to one embodiment. For the sake of brevity of explanation, substantially the same content as that described in Figure 2 will not be explained.

[0115] The dielectric plate 310a may have a stepped shape on its lower surface. For example, the lower surface of the dielectric plate 310a may include a first lower surface 316 and a second lower surface 317. The first lower surface 316 is also the lower surface adjacent to the central region of the substrate W in a top view. The second lower surface 317 is also the lower surface surrounding the first lower surface 316 in a top view. The second lower surface 317 is also the lower surface adjacent to the edge region of the substrate W in a top view.

[0116] The distance between the first lower surface 316 and the substrate W and the distance between the second lower surface 317 and the substrate W may differ from each other. For example, the distance between the first lower surface 316 and the substrate W is smaller than the distance between the second lower surface 317 and the substrate W. Plasma P flows relatively smoothly into the region below the second lower surface 317 of the dielectric plate 310a where the step is formed, and plasma P flows relatively suppressed into the region below the first lower surface 316, which can improve the processing efficiency for the edge region of the substrate W.

[0117] A boundary surface 318 having a convex, rounded surface toward the processing space 102 may be positioned between the first lower surface 316 and the second lower surface 317. The rounded surface is a non-flat surface that may be convex toward the processing space 102. The rounded surface may have a radius of curvature. Here, the radius of curvature is also the mean radius of curvature of the rounded surface, but is not limited to that. The radius of curvature is both the minimum and maximum value of the radius of curvature of the rounded surface. The definition of the radius of curvature may be defined by the designer, operator, etc., of the substrate processing apparatus 1000.

[0118] The radius of curvature of a rounded surface is also approximately 10 mm or less. For example, the radius of curvature of the first rounded surface RS1 is also approximately 1 mm or more and 7 mm or less. For the sake of explanation, the rounded surface included in the interface 318 may be referred to as the first rounded surface RS1, and the radius of curvature of the first rounded surface RS1 may be referred to as the first radius of curvature R1.

[0119] A first protective layer 510a may be placed on the surface of the dielectric plate 310a. The first protective layer 510a has been explained in Figure 1, so a detailed explanation will be omitted. For example, the first protective layer 510a may include a first sub-protective layer 511 placed on the first lower surface 316, a second sub-protective layer 512 placed on the second lower surface 317, and a third sub-protective layer 513 placed on the interface surface 318.

[0120] As the first protective layer 510 is formed along the lower surface of the dielectric plate 310a, the first protective layer 510 may also have a convex, rounded surface toward the processing space 102. The entire surface of the third sub-protective layer 513 is also a rounded surface. However, it is not limited to this. Only a part of the surface of the third sub-protective layer 513 is also a rounded surface. For example, the surface of the third sub-protective layer 513 adjacent to the first sub-protective layer 511 is also a rounded surface. For the sake of explanation, the rounded surface included in the first protective layer 510 may be referred to as the second rounded surface RS2. The radius of curvature of the second rounded surface RS2 may be referred to as the second radius of curvature R2.

[0121] The second radius of curvature R2 is also the same as the first radius of curvature R1, but is not limited to that. The second radius of curvature R2 and the first radius of curvature R1 can be different from each other. For example, the second radius of curvature R2 can be greater than or equal to the first radius of curvature R1. The third sub-protective layer 513 includes the second round surface RS2, which can further effectively reduce the chipping effect on the plasma.

[0122] On the other hand, the larger the second radius of curvature R2, the more likely the plasma that collides with the second round surface RS2 is to penetrate the intermediate region of the substrate W and etch that region. This could lead to etching of areas of the substrate W that are not intended to be etched, potentially increasing the defect rate of the substrate W. Therefore, the second radius of curvature R2 can be limited to a range that minimizes defects in the substrate W. The second radius of curvature R2 is also approximately 10 mm or less. For example, the second radius of curvature R2 is also approximately 1 mm to 7 mm.

[0123] On the other hand, even if the protective layer 500a is coated, the protective layer 500a may be damaged as the plasma processing process is carried out, and the thickness of the protective layer 500a may decrease. In one embodiment of the substrate processing apparatus 1000, the thickness of the protective layer 500a in areas that have a lot of plasma contact may differ from the thickness of the areas that have little plasma contact.

[0124] Figure 7 is a drawing showing a substrate processing apparatus 1000b including a first protective layer 510b having a non-uniform thickness according to one embodiment. For the sake of brevity of explanation, substantially the same content as described in Figure 6 will not be explained.

[0125] The first protective layer 510b included in the substrate processing apparatus 1000b in Figure 7 also has an uneven thickness. The thickness of the second sub-protective layer 512a and the third sub-protective layer 513a is greater than the thickness of the first sub-protective layer 511a. For example, the thickness of the second sub-protective layer 512a and the third sub-protective layer 513a is about 100 μm or more. And the thickness of the first sub-protective layer 511a is less than about 100 μm. Alternatively, the thickness of the second sub-protective layer 512a and the third sub-protective layer 513a is about 100 μm or more and about 150 μm or less, and the thickness of the first sub-protective layer 511a is about 50 μm or more and less than 100 μm. The thickness of the second to fifth protective layers 520, 530, 540, and 550 is less than or equal to the thickness of the third sub-protective layer 513a and greater than or equal to the thickness of the first sub-protective layer 511a. For example, the thickness of the second to fifth protective layers 520, 530, 540, and 550 is approximately 50 μm to approximately 100 μm.

[0126] As the substrate processing apparatus 1000b performs the plasma processing step, the thicknesses of the second sub-protective layer 512a and the third sub-protective layer 513a may decrease relatively faster than other protective layers, such as the first sub-protective layer 511a and the second to fifth protective layers 520, 530, 540, and 550.

[0127] In one embodiment, the substrate processing apparatus 1000b can ensure a longer recoating cycle for the protective layer 500b by making the thickness of the second sub-protective layer 512a and the third sub-protective layer 513a, which have a relatively high plasma contact rate, larger than that of the other protective layers.

[0128] Furthermore, if the thickness of the protective layer 500b is formed uniformly, the thickness of the protective layer 500b will be uneven at the time of recoating, making it difficult to remove the residual protective layer. In one embodiment, the protective layer 500b has a thicker thickness where the plasma contact rate is relatively high, so the thickness of the residual protective layer can be relatively uniform at the time of recoating. This makes it even easier to remove the residual protective layer.

[0129] The third sub-protective layer 513a is uniform, but is not limited to that. The thickness of the third sub-protective layer 513a may gradually decrease from the second sub-protective layer 512a to the first sub-protective layer 511a.

[0130] As mentioned above, the thickness of the third sub-protective layer 513a may decrease as the plasma processing process is carried out. As the thickness of the third sub-protective layer 513a decreases, the second radius of curvature R2 of the second round surface RS2 may also change. For example, the second radius of curvature R2 increases as the substrate processing apparatus 1000b operates. A change in the second radius of curvature R2 can change the area of ​​the substrate W that is processed by the plasma. For example, the area of ​​the substrate W that is processed by the plasma may increase as the substrate processing apparatus 1000b operates. This can hinder the process uniformity of the substrate processing apparatus 1000b.

[0131] In one embodiment, the substrate processing apparatus can adjust the distance between the substrate W and the protective layer 500b, for example, the first sub-protective layer 511a, by a second radius of curvature R2 in order to maintain a uniform processing area of ​​the substrate W. In one embodiment, the substrate processing apparatus 1000b can reduce the distance between the substrate W and the protective layer 500b as the radius of curvature increases. That is, the substrate processing apparatus 1000b can adjust the distance between the substrate W and the protective layer 500b so as to be inversely proportional to the radius of curvature. In one embodiment, the substrate processing apparatus 1000 can provide an indicator that the protective layer 500 must be recoated if the second radius of curvature R2 is excessively large and the defect rate of the substrate W is high, or if the deviation of the second radius of curvature R2 is severe and the defect rate of the substrate W is high.

[0132] Figure 8A is a diagram showing a substrate processing apparatus 1000c including an optical sensor 600 according to one embodiment, and Figure 8B is a diagram schematically showing the relationship between the second round surface RS2 and the optical sensor 600. For the sake of brevity of explanation, substantially the same content as that described in Figure 7 will not be explained.

[0133] Referring to Figures 8A and 8B, the housing 100a may include a viewport 106. The viewport 106 is provided in a transparent material and is a port that allows an operator or other person to visually inspect the processing space 102 of the housing 100a, or the viewport 106 may be provided on the side wall of the housing 100a. A pair of viewports 106 may be provided facing each other.

[0134] The viewport 106 may be arranged in a direction parallel to the lower surface of the dielectric plate 310 and overlapping with the third sub-protective layer 513a. Alternatively, the viewport 106 may be arranged in a direction parallel to the upper surface of the chuck 210 and not overlapping with the upper surface of the chuck 210. For example, the upper end of the viewport 106 may be higher than the third sub-protective layer 513a, and the lower end of the viewport 106 may be higher than the upper surface of the chuck 210. However, it goes without saying that this is not limited to this. The lower end of the viewport 106 may be lower than the upper surface of the chuck 210.

[0135] A substrate processing apparatus 1000c according to one embodiment may further include an optical sensor 600 capable of obtaining a second radius of curvature R2 of the third sub-protective layer 513a. For example, the optical sensor 600 can use light to obtain a second radius of curvature R2 of the second round surface RS2 contained in the third sub-protective layer 513a. The optical sensor 600 may utilize light such as an LED or laser that has directional properties.

[0136] The light sensor 600 may include a light irradiator 610 and a photodetector 620. The light irradiator 610 and the photodetector 620 may be arranged in the viewport 106 described above. For example, the light irradiator 610 may be provided in one of the pair of viewports 106, and the photodetector 620 may be provided in one of the pair of viewports 106. That is, the light L irradiated by the light irradiator 610 to the processing space 102 via one of the pair of viewports 106 may be transmitted to the photodetector 620 via the other of the pair of viewports 106. The light irradiator 610 and the photodetector 620 may be arranged facing each other with the viewport 106 in between.

[0137] The light irradiating unit 610 can irradiate light L. The photodetector 620 can detect the light L irradiated by the light irradiating unit 610. The photodetector 620 can be positioned on the path of the light L irradiated by the light irradiating unit 610. As shown in Figure 8B, the second round surface RS2 of the third sub-protective layer 513a can be positioned on the path of the light L. For example, the optical axis LX included in the path of the light L is aligned with the tangential direction of the second round surface RS2. And at least a portion of the path of the light L can overlap with the second round surface RS2.

[0138] The light irradiation unit 610 can irradiate light toward the first protective layer 510b within the processing space 102. The photodetector 620 can detect light L irradiated from the light irradiation unit 610 that does not enter the first protective layer 510b but travels through the processing space 102. For example, a portion of the light L irradiated by the light irradiation unit 610 is blocked by the first protective layer 510b, particularly the second round surface RS2, while another portion of the light L can pass through the processing space 102 and be transmitted to the photodetector 620.

[0139] The photodetector 620 includes a processor (not shown) and can acquire the second radius of curvature R2 of the second round surface RS2 using the detected light intensity, the position where the light is detected, etc. The second radius of curvature R2 can be acquired using a shadow image, but is not limited to that. The method for acquiring the second radius of curvature R2 using light is based on known techniques, and a detailed explanation is omitted.

[0140] The light sensor 600 can, but is not limited to, acquiring a second radius of curvature R2. The photodetector 620 transmits information related to the detected light to the controller 900, which can then acquire the second radius of curvature R2. In this case, the controller 900 can act as the processor for the light sensor 600.

[0141] The optical sensor 600 may, but is not limited to, be fixed to the housing 100a. The optical sensor 600 is detachably attached to the housing 100a. The optical sensor 600 further includes a drive member (not shown) which can rotate the light irradiation unit 610 and the photodetector 620 on the housing 100a. The optical sensor 600 can then acquire a second radius of curvature R2 relating to the second round surface RS2 at various positions. Alternatively, the optical sensor 600 may be fixed on the housing 100a, and the second radius of curvature R2 relating to the second round surface RS2 at various positions can be acquired by the rotation of the housing 100a or the rotation of the dielectric plate 310.

[0142] The optical sensor 600 can obtain the second radius of curvature R2 relating to the second round surface RS2 at a specific location, or the second radius of curvature R2 relating to the entire second round surface RS2. Alternatively, the optical sensor 600 can also obtain the standard deviation of the second radius of curvature R2.

[0143] The light sensor 600 can, but is not limited to, obtaining the second radius of curvature R2. The light sensor 600 can use the detected light to obtain the distance between the first sub-protective layer 511a and the substrate W. The distance between the first sub-protective layer 511a and the substrate W can also be obtained based on the amount of light and the position of the detected light.

[0144] Figure 9 is a flowchart illustrating a method for adjusting the distance between the first sub-protective layer 511a and the substrate W by a second radius of curvature R2 according to one embodiment. Referring to Figures 8A, 8B and 9, the optical sensor 600 can acquire a second radius of curvature R2 relating to the second round surface RS2 (S2010). The optical sensor 600 includes an optical irradiation unit 610 and a photodetector 620, and the second round surface RS2 may be positioned on the path of light L. For example, the optical axis LX of the light path is aligned with the tangential direction of the second round surface RS2, and a portion of the second round surface RS2 may overlap with a portion of the light L path.

[0145] The light sensor 600 may, but is not limited to, acquire a second radius of curvature R2 based on the position and intensity of the detected light. The photodetector 620 transmits the information of the detected light to the controller 900, which may acquire the second radius of curvature R2. The second radius of curvature R2 is also the radius of curvature at a specific position on the second round surface RS2, but is not limited to that. The second radius of curvature R2 is also the average of the radii of curvature acquired at multiple positions on the second round surface RS2. The radii of curvature acquired at multiple positions may be acquired by the rotation of at least one of the light sensor 600, the housing 100a, and the dielectric plate 310.

[0146] The controller 900 determines whether the second radius of curvature R2 is less than a reference value (S2020). Here, the reference value is the range in which the substrate W cannot be effectively processed even if the distance between the substrate W and the first sub-protective layer 511a is adjusted, i.e., the range in which the processed substrate W becomes defective. The reference value means the radius of curvature when the number of substrates W that are processed as defective is greater than a predetermined number. For example, the reference value is approximately 10 mm. However, it is not limited to this. The reference value can be adjusted by the designer, operator, etc., of the substrate processing apparatus 1000.

[0147] If the second radius of curvature R2 is less than a reference value (S2020 - Yes), the controller 900 can adjust the distance d between the substrate W and the first sub-protective layer 511a so that the distance d between the substrate W and the first sub-protective layer 511a becomes the target distance. The memory 920 of the controller 900 already stores information related to the target distance corresponding to the radius of curvature in a lookup table. There is a one-to-one correspondence between the radius of curvature and the target distance, and the radius of curvature and the target distance are inversely proportional. If there are multiple processing area ranges for the substrate W, the target distance corresponding to the radius of curvature can be matched and stored for each processing area range. The controller 900 can read the target distance corresponding to the second radius of curvature R2 obtained from the lookup table stored in the memory 920 and control the actuator 260 so that the distance d between the substrate W and the first sub-protective layer 511a becomes the target distance.

[0148] If the gap d between the substrate W and the first sub-protective layer 511a is adjusted to the target gap, the substrate processing apparatus 1000b can process the substrate W by generating plasma (S2040). For example, the substrate processing apparatus 1000 can process the substrate W by supplying a process gas and generating plasma from the supplied process gas. The substrate processing apparatus 1000 can process the edge region of the substrate W by supplying a process gas and generating plasma from the supplied process gas.

[0149] The optical sensor 600 may further measure the distance d between the substrate W and the first sub-protective layer 511a to confirm whether the distance d between the substrate W and the first sub-protective layer 511a has reached the target distance, and may provide the result to the controller 900. If the difference between the distance d between the substrate W and the first sub-protective layer 511a and the target distance is within the error range, step S2040 may be performed. If the difference between the distance d between the substrate W and the first sub-protective layer 511a and the target distance is outside the error range, the controller 900 may readjust the distance d between the substrate W and the first sub-protective layer 511a.

[0150] If the second radius of curvature R2 is greater than or equal to a reference value, the controller 900 may output an indicator to signal that the protective layer 500b has reached the end of its lifespan. The indicator may be output via the output unit 940 of the controller 900 in the form of an image, light, text, etc. If the second radius of curvature R2 is greater than or equal to a reference value, even if the gap d between the substrate W and the first sub-protective layer 511a is adjusted, the number of defective substrates W will also exceed a predetermined number. This means that the protective layer 500b has reached the end of its lifespan. Therefore, the defect rate of the substrate W can be reduced by informing workers that it is necessary to recoat the protective layer 500b or replace the parts coated with the protective layer 500b.

[0151] Meanwhile, the controller 900 determines whether the plasma processing period is equal to or greater than the reference time (S2060). The reference time is also the time during which the change in the second radius of curvature R2 is expected due to the plasma processing. The plasma processing may be performed continuously or discontinuously. The plasma processing time is the sum of the times during which the plasma processing is performed.

[0152] If the plasma treatment time is equal to or greater than the reference time (S2060 - Yes), the substrate processing apparatus 1000c may repeat the process of obtaining a second radius of curvature R2 of the second round surface RS2, adjusting the distance between the substrate W and the first sub-protective layer 511a to correspond to the obtained second radius of curvature R2, and then performing the plasma treatment process.

[0153] Figure 9 shows that an indicator is provided when the second radius of curvature R2 is greater than or equal to a reference value, but it is not limited to this. The indicator may also be provided when the standard deviation of the second radius of curvature R2 is greater than or equal to a predetermined value. This is because if the standard deviation of the second radius of curvature R2 is large, it is difficult to expect uniform process capability.

[0154] As mentioned above, since the substrate W is plasma-treated after adjusting the gap d between the substrate W and the first sub-protective layer 511a by the second radius of curvature R2, the uniform process capability of the substrate processing apparatus 1000b can be maintained. Furthermore, even if the second radius of curvature R2 is changed, one protective layer 500b can be used for a long time, which can reduce the maintenance cost of the substrate processing apparatus 1000.

[0155] The method for adjusting the distance between the substrate and the protective layer based on the radius of curvature of the protective layer has been explained using the substrate processing apparatus 1000c shown in Figures 8A and 8B as a reference, but is not limited thereto. The method for adjusting the distance between the substrate and the protective layer based on the radius of curvature of the protective layer can also be applied to substrate processing apparatuses 1000, 1000a, and 1000b that include a protective layer. Moreover, although not shown in the drawings, it goes without saying that it can also be applied to substrate processing apparatuses that perform a plasma processing process while including a protective layer.

[0156] The method by which the substrate processing apparatus 1000 generates plasma P as described in the above example is also the ICP (Inductive coupled plasma) method. Alternatively, the method by which the substrate processing apparatus 1000 generates plasma P as described above is also the CCP (Capacitor couple plasma) method. Alternatively, the substrate processing apparatus 1000 may use both the ICP (Inductive coupled plasma) method and the CCP (Capacitor couple plasma) method, or it may generate plasma P using a method selected from the ICP (Inductive coupled plasma) method and the CCP (Capacitor couple plasma) method. Alternatively, the substrate processing apparatus 1000 can also generate plasma P using the remote plasma method.

[0157] The substrate processing apparatus described above is merely an example, and anyone with ordinary knowledge in the field will understand that various modifications and equivalent other embodiments are possible. While many details are specifically described in the above explanation, these should be interpreted as examples of specific embodiments rather than as limiting the scope of the invention. Therefore, the scope of the present invention is not determined by the described embodiments, but by the technical idea described in the claims.

Claims

1. In a device for processing substrates, Housing defines the processing space, A lower electrode unit is arranged in the processing space and supports the substrate, An upper electrode unit is positioned spaced apart from the lower electrode unit, with the substrate in between, A gas supply unit that supplies process gas for plasma processing the edge region of the substrate, A substrate processing apparatus comprising: a protective layer disposed on at least a portion of the surfaces of the lower electrode unit and the upper electrode unit, and made of a material having higher plasma resistance than the plasma resistance of the lower electrode unit and the upper electrode unit.

2. The aforementioned protective layer is A substrate processing apparatus according to claim 1, comprising a substance containing at least two of Nd, Pm, Sm, Gd, Y, Sc, Er, F, and O.

3. The aforementioned protective layer is A substrate processing apparatus according to claim 1, comprising a substance containing at least three of Nd, Pm, Sm, Gd, Y, Sc, Er, F, and O.

4. The aforementioned protective layer is YF as the matrix ３ and Y ２ O ３ The substrate processing apparatus according to claim 1, comprising at least one of the following, and comprising at least one of Nd, Pm, Sm, Gd, Sc, and Er as a dopant.

5. The thickness of the aforementioned protective layer is, The substrate processing apparatus according to claim 1, wherein the substrate is 50 μm or more and 150 μm or less.

6. The upper electrode unit is The dielectric plate is arranged in the thickness direction of the substrate and overlaps with a part of the substrate, The aforementioned protective layer is The substrate processing apparatus according to claim 1, further comprising a first protective layer disposed on the lower surface of the dielectric plate.

7. The substrate processing apparatus according to claim 6, wherein the thickness of the first protective layer is non-uniform.

8. The lower surface of the dielectric plate is A substrate processing apparatus according to claim 6, wherein a step is formed.

9. The lower surface of the dielectric plate is A first lower surface, which is spaced approximately a first distance from the substrate, A second lower surface is spaced at a distance from the substrate by a second distance, which is wider than the first distance, The substrate processing apparatus according to claim 8, comprising: an interface surface connecting the first lower surface and the second lower surface, having a first round surface that is convex toward the processing space.

10. The first round surface is, The substrate processing apparatus according to claim 9, wherein the interface surface is the surface in contact with the first lower surface.

11. The first protective layer is, A first sub-protective layer disposed on the first lower surface, A second sub-protective layer is disposed on the second lower surface, The substrate processing apparatus according to claim 9, further comprising a third sub-protective layer disposed on the interface surface.

12. The thickness of the second sub-protective layer is The substrate processing apparatus according to claim 11, wherein the thickness is greater than that of the first sub-protective layer.

13. The thickness of the third sub-protective layer is The substrate processing apparatus according to claim 11, wherein the size decreases from the second sub-protective layer to the first sub-protective layer.

14. The substrate processing apparatus according to claim 11, wherein the third sub-protective layer has a second round surface that is convex toward the processing space.

15. The radius of curvature of the aforementioned second round surface is, The substrate processing apparatus according to claim 14, wherein the radius of curvature is greater than or equal to that of the first round surface.

16. The radius of curvature of the aforementioned second round surface is, The substrate processing apparatus according to claim 14, wherein the substrate is 10 mm or less.

17. The distance between the substrate and the first sub-protective layer is The substrate processing apparatus according to claim 14, which is adjusted in accordance with the radius of curvature of the second round surface.

18. The distance between the substrate and the first sub-protective layer is The substrate processing apparatus according to claim 17, which is adjusted to be inversely proportional to the radius of curvature of the second round surface.

19. The substrate processing apparatus according to claim 14, further comprising a photosensor disposed on the housing and using light to obtain the radius of curvature of the second round surface.

20. The aforementioned light sensor is A light irradiation unit that irradiates the light toward the second round surface, The substrate processing apparatus according to claim 19, comprising a photodetector for detecting light that is not blocked by the second round surface and has advanced through the processing space.

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