PCB support

Abstract

The substrate support comprises a body having an upper surface and a plurality of support members protruding above the upper surface. One or more of the support members include a first portion formed of a first material and a second portion formed of a second material, the second portion being positioned between the first portion and the body. The Young's modulus of the second material in the direction parallel to the upper surface is less than 10% of the Young's modulus of the first material in the direction parallel to the upper surface.

Description

Technical Field

[0001] (Cross - reference to related applications)

[0001] This application claims the priority of European Patent Application No. 23173032.6 filed on May 12, 2023. The entire content thereof is incorporated herein by reference.

[0002]

[0002] The present invention relates to a substrate support and a method for manufacturing a device including supporting a substrate on the substrate support.

Background Art

[0003]

[0003] A lithography apparatus is a machine constructed to apply a desired pattern onto a substrate. A lithography apparatus can be used, for example, in the manufacture of integrated circuits (ICs). A lithography apparatus can, for example, project a pattern of a patterning device (e.g., a mask), often referred to as a “design layout” or “design”, onto a layer of radiation - sensitive material (resist) provided on a substrate (e.g., a wafer).

[0004]

[0004] As semiconductor manufacturing processes continue to advance, the dimensions of circuit elements are constantly shrinking, while the amount of functional elements such as transistors per device has been steadily increasing over several decades according to a trend generally referred to as “Moore's Law”. To keep up with Moore's Law, the semiconductor industry is seeking technologies that can generate increasingly smaller features. To project a pattern onto a substrate, a lithography apparatus can use electromagnetic radiation. The wavelength of this radiation determines the minimum size of the features patterned on the substrate. Typical wavelengths currently in use are 365 nm (i - line), 248 nm, 193 nm, and 13.5 nm.

[0005]

[0005] The lithography apparatus may include an illumination system for providing a projected beam of radiation and a support structure for supporting a patterning device. The patterning device may function to impart a pattern to the cross-section of the projected beam. The apparatus may also include a projection system for projecting the patterned beam onto a target portion of a substrate.

[0006]

[0006] In a lithography apparatus, the substrate to be exposed (which may be called a product substrate) can be held on a substrate support (which may be called a wafer table). A solid body can be provided with a plurality of support members (which may be called bars). The distal surfaces of the support members coincide with a plane and can support the substrate. The support members can offer several advantages. For example, contaminant particles on or on the substrate are likely to fall between the support members, thus not causing deformation of the substrate. Also, it is easier to machine the support members so that their ends coincide with a plane than to flatten the surface of the solid body.

[0007]

[0007] During the manufacturing of a device, circuit elements can be printed on several layers that overlap each other. Misalignment between layers is sometimes called an "overlay error," or more commonly, simply an "overlay." When a substrate is loaded onto a substrate support, localized sliding can occur between the distal surface of the support member and the substrate. This localized sliding can cause in-plane deformation of the substrate, which can lead to an overlay error. The characteristic pattern of overlay caused by this is called a "wafer load grid (WLG)."

[0008]

[0008] Generally, support members can have high horizontal rigidity. Support members with high horizontal rigidity can cause large in-plane deformation of the substrate when the substrate is loaded onto the substrate support. This results in increased overlay error and a large wafer load grid. [Overview of the project]

[0009]

[0009] The present invention provides a substrate support comprising a support member configured to reduce the occurrence of in-plane deformation of the substrate when the substrate is loaded onto the substrate support. As a result, the overlay can be improved.

[0010]

[0010] According to the present invention, the substrate support comprises a main body having an upper surface and a plurality of support members protruding above the upper surface. One or more of the support members include a first portion formed of a first material and a second portion formed of a second material, the second portion being positioned between the first portion and the main body. The Young's modulus of the second material in the direction parallel to the upper surface is less than 10% of the Young's modulus of the first material in the direction parallel to the upper surface.

[0011]

[0011] Furthermore, according to the present invention, the lithography apparatus is equipped with the above-described substrate support.

[0012]

[0012] Furthermore, according to the present invention, a method for manufacturing a device includes supporting a substrate on the substrate support described above.

[0013]

[0013] Other embodiments, features, and advantages of the present invention, as well as the structure and operation of various embodiments, features, and advantages of the present invention, are described in detail below with reference to the accompanying drawings. [Brief explanation of the drawing]

[0014]

[0014] Hereinafter, embodiments of the present invention will be described simply as an example with reference to the attached schematic diagrams in which the corresponding reference numerals indicate the corresponding parts.

[0015] [Figure 1] A general overview of a lithography system is provided. [Figure 2] A plan view of the circuit board support is shown. [Figure 3] A cross-sectional view of the substrate support is shown. [Figure 4] A cross-sectional view of a support member for a substrate support according to the present invention is shown. [Figure 5]This shows a cross-sectional view of a support member for a substrate support according to the first embodiment of the present invention. [Figure 6] A cross-sectional view of a support member for a substrate support according to a second embodiment of the present invention is shown. [Figure 7] This shows a plot of overlay error (O) against warp (W) of support members with different horizontal rigidity.

[0016]

[0015] The features shown in the drawings are not necessarily to a specific scale, and the sizes and / or arrangements shown are not limiting. It will be understood that these features include optional features that may not be essential to the present invention. Furthermore, not all features of the substrate support are shown in each of the drawings, and the drawings only show some of the relevant components to illustrate a particular feature. [Modes for carrying out the invention]

[0017]

[0016] In this document, the terms “radiation” and “beam” are used to encompass all types of electromagnetic radiation, including ultraviolet radiation (for example, having wavelengths of 436 nm, 405 nm, 365 nm, 248 nm, 193 nm, 157 nm, 126 nm, or 13.5 nm).

[0018]

[0017] The terms “reticle,” “mask,” or “patterning device,” as used herein, may be broadly interpreted to refer to a general-purpose patterning device that can be used to give an incoming radiation beam a patterned cross-section corresponding to a pattern generated on a target portion of a substrate. The term “light bulb” may also be used in this context. In addition to classical masks (transmissive or reflective masks, binary masks, phase-shift masks, hybrid masks, etc.), other examples of such patterning devices include programmable mirror arrays and programmable LCD arrays.

[0019]

[0018] Figure 1 schematically shows a lithographic apparatus LA. The lithographic apparatus includes an illumination system (also referred to as an illuminator) IL configured to condition a radiation beam B (e.g., EUV radiation or DUV radiation), a mask support (e.g., a mask table) MT connected to a first positioner PM configured to support a patterning device (e.g., a mask) MA and accurately position the patterning device MA according to certain parameters, a substrate support (e.g., a substrate table or substrate support) WT connected to a second positioner PW configured to hold a substrate (e.g., a resist-coated wafer) W and accurately position the substrate support WT according to certain parameters, and a projection system (e.g., a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by the patterning device MA onto a target portion C (e.g., including one or more dies) of the substrate W.

[0020]

[0019] In operation, the illumination system IL receives the radiation beam B from a radiation source SO, e.g., via a beam delivery system BD. The illumination system IL can include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic, and / or other types of optical components, or any combination thereof, for directing, shaping, and / or controlling the radiation. The illuminator IL can be used to condition the radiation beam B such that the radiation beam B has a desired spatial and angular intensity distribution in the plane of the patterning device MA.

[0021] As used herein, the term "projection system" PS should be construed broadly and may encompass various types of projection systems, including refractive optical systems, reflective optical systems, catadioptric optical systems, anamorphic optical systems, magneto-optical systems, electro-magneto-optical systems, and / or electro-static optical systems, or any combination thereof, as appropriate in accordance with the exposure radiation used and / or other factors such as the use of an immersion liquid or the use of a vacuum. When the term "projection lens" is used herein, it can be considered synonymous with the more general term "projection system" PS.

[0022]

[0021] The lithographic apparatus may also be of a type that can cover at least a portion of the substrate W with an immersion liquid having a relatively high refractive index, such as water, so as to fill the immersion space between the projection system PS and the substrate W. This is also referred to as immersion lithography. Further information regarding immersion techniques is given in US 6,952,253, which is incorporated herein by reference.

[0023]

[0022] Further, the lithographic apparatus may also be of a type having two (also referred to as "dual stage") or more substrate supports WT. In such a "multi-stage" machine, the substrate supports WT can be used in parallel and / or preparatory steps for subsequent exposures can be performed on a substrate W disposed on one of the substrate supports WT while the substrate W on the other substrate support WT is being used for exposing a pattern thereon.

[0024]

[0023] In addition to the substrate support WT, the lithography apparatus may include a measurement stage (not shown in Figure 1). The measurement stage is positioned to hold sensors and / or cleaning devices. The sensors may be positioned to measure the characteristics of the projection system PS or the characteristics of the radiation beam B. The measurement stage may hold multiple sensors. The cleaning devices may be positioned to clean parts of the lithography apparatus, such as a part of the projection system PS or a part of the system that provides the immersion fluid. If the substrate support WT is separated from the projection system PS, the measurement stage may move below the projection system PS.

[0025]

[0024] During operation, the radiating beam B is incident on a patterning device MA, such as a mask, which is held on a mask support MT, and a pattern is formed by the pattern (design layout) present on the patterning device MA. After traversing the patterning device MA, the radiating beam B passes through a projection system PS, which focuses the beam onto a target portion C on the substrate W. Using a second positioner PW and a position measuring system PMS, the substrate support WT can be precisely moved to position various target portions C at focused and aligned positions within the path of the radiating beam B, for example. Similarly, using a first positioner PM and possibly another position sensor (not explicitly shown in Figure 1), the patterning device MA can be precisely positioned relative to the path of the radiating beam B. The patterning device MA and the substrate W can be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. The illustrated substrate alignment marks P1, P2 occupy dedicated target portions, but these marks may be positioned in the space between target portions. When substrate alignment marks P1 and P2 are positioned between target portion C, they are known as scribe line alignment marks.

[0026]

[0025] The Cartesian coordinate system is used herein. The Cartesian coordinate system has three axes, namely the x-axis, y-axis, and z-axis. Each of the three axes is orthogonal to the other two axes. A rotation about the x-axis is called an Rx rotation. A rotation about the y-axis is called a Ry rotation. A rotation about the z-axis is called an Rz rotation. The x-axis and y-axis define the horizontal plane, and the z-axis is perpendicular. The Cartesian coordinate system is used not to limit the present invention, but solely for clarity. Alternatively, another coordinate system, such as a cylindrical coordinate system, may be used to clarify the present invention. For example, the Cartesian coordinate system may be oriented differently such that the z-axis has a component along the horizontal plane.

[0027]

[0026] In a lithography apparatus, the upper surface of the substrate to be exposed needs to be precisely positioned at the best focus plane of the spatial image of the pattern projected by the projection system. To achieve this, the substrate can be held on a substrate support. Multiple support members can be provided on the surface of the substrate support that holds the substrate, and the distal ends of these support members can be placed coplanar within the nominal support plane. Support members are sometimes called bales. Although there are many support members, their cross-sectional area parallel to the support plane is small, so the total cross-sectional area of ​​their distal ends is a few percent of the surface area of ​​the substrate, and may be less than 5%, for example. Against pressure above the substrate, the gas pressure in the space between the substrate support and the substrate can be reduced to generate a clamping force on the substrate support.

[0028]

[0027] Figure 2 shows a plan view of the substrate support 1. Figure 3 shows a partial cross-sectional view of the substrate support 1. The substrate support 1 may include a body 10 having an upper surface 11. The body 10 may form most of the substrate support 1. The upper surface 11 may be the upper surface of the body 10 when positioned as shown in Figure 3. That is, the upper surface 11 may be the upper surface in the Z direction (vertical direction).

[0029]

[0028] The substrate support 1 may include a plurality of support members 20 connected to and protruding from the upper surface 11 of the main body 10. The plurality of support members 20 may extend downward from the upper surface of the main body 10. In this case, the plurality of support members 20 may be connected to surfaces of the main body 10 other than the upper surface 11. The plurality of support members 20 may have a proximal end 21 located near the main body 10 when in a predetermined position, and a distal end 22. The distal end 22 may be the end of the plurality of support members 20 opposite to the proximal end 21. That is, the distal end 22 may be located at the end of the support member 20 that is away from the main body 10.

[0030]

[0029] Multiple support members 20 may have a central longitudinal axis 23, along which the proximal end 21 is at one end of the support member 20 and the distal end 22 is at the other end of the support member 20. Thus, each of the multiple support members 20 may have a central longitudinal axis 23 from the proximal end 21 to the distal end 22.

[0031]

[0030] The distal ends 22 of the multiple support members 20 form a support surface for the substrate W. Specifically, the distal ends 22 of the multiple support members 20 can support the lower surface 31 of the substrate W. The upper surface 32 of the substrate W may be the surface opposite to the lower surface 31. The upper surface 32 may be a surface configured to receive the radiation beam B.

[0032]

[0031] The support surface can be formed to be planar. As a result, the substrate W can also be positioned on the support surface so as to be substantially flat, thereby reducing errors (i.e., defects) in the pattern printed on the substrate W.

[0033]

[0032] As shown in Figure 3, the multiple support members 20 can be substantially frustoconical, i.e., frustoconical or conical in shape. Alternatively, they may be substantially cylindrical. The frustoconical support members 20 are stronger than the cylindrical support members 20 and are therefore less likely to break. Preferably, the multiple support members 20 have the same shape as each other.

[0034]

[0033] The multiple support members 20 can be connected to the main body 10 by any suitable method. The multiple support members 20 can be separate components attached to the main body 10. For example, the multiple support members 20 can be attached to the top surface 11 of the main body 10, or to a surface of the main body 10 other than the top surface 11, for example, a substantially horizontal surface located below the top surface 11 (i.e., further from the substrate W than the top surface 11). Alternatively, the multiple support members 20 may be integral with the main body 10. In other words, the multiple support members 20 can be formed as protrusions from the main body 10. That is, the multiple support members 20 can be formed as a single part integral with the main body 10.

[0035]

[0034] The substrate support 1 may be configured to extract fluid from between the substrate W supported on the support surface and the upper surface 11. Fluid at the edge of the substrate W can be drawn downwards from the substrate W. When fluid is extracted, the pressure below the substrate W decreases relative to the pressure above the substrate W, and the edge of the substrate W descends towards the substrate support 1. By extracting the fluid in the space below the substrate W and reducing the relative pressure in the space between the substrate support 1 and the substrate W, the substrate W can be clamped.

[0036]

[0035] The main body 10 may include at least one extraction opening 12 through which fluid can be extracted. Multiple extraction openings 12 may be present.

[0037]

[0036] When clamping the substrate W, it is beneficial to reduce fluid leakage into the space between the substrate W and the main body 10. Therefore, it may be beneficial to provide a physical boundary positioned near the edge of the substrate support 1. As shown in Figures 2 and 3, the physical boundary can be formed near the edge of the main body 10. The physical boundary can be formed by a sealing member 40. The sealing member 40 may be a wall-type projection formed around the edge of the main body 10, for example, along the circumference of the main body 10. The sealing member 40 may be formed to provide a seal between the underside of the substrate W and the substrate support 1 around the edge of the substrate W. The seal provided by the sealing member 40 does not need to be a perfect seal, but a partial seal that reduces but does not eliminate fluid flow into the space between the substrate support 1 and the substrate W.

[0038]

[0037] The fixed sealing member 40 can surround a plurality of support members 20. The fixed sealing member 40 may protrude from the upper surface 11 of the main body 10. The fixed sealing member 40 may be connected to the main body 10 by any means. The fixed sealing member 40 may be integral with the main body 10.

[0039]

[0038] A pressure sensor (not shown in the drawings) can be used to measure the pressure between the substrate W and the upper surface 11 of the main body 10. Various sensors are known for measuring the pressure in the space below the substrate W. For example, a pressure sensor such as the one disclosed in WO2017 / 137129A1, which is entirely incorporated herein by reference, is an example of a suitable pressure sensor that can be used.

[0040]

[0039] The flow rate of the fluid extracted through the extraction opening 12 can be measured using a flow sensor (not shown in the drawing). Various sensors are known for measuring the flow rate from the space below the substrate W.

[0041]

[0040] In the present invention, the precise arrangement of the support member 20, one or more fixed sealing members 40, and extraction opening 12 in the substrate support 1 is not particularly limited.

[0042]

[0041] According to the present invention, the substrate support 1 includes a plurality of support members 20 protruding from the upper surface 11. Figure 4 shows a cross-sectional view of a support member 20 of the substrate support 1 according to the present invention. The substrate support 1 according to the present invention may include one or more support members 20 having the structure described herein. In some embodiments, all of the plurality of support members 20 on the substrate support 1 may have the structure described herein. However, the substrate support 1 according to the present invention may include one or more support members 20 that do not have the structure described herein. In some embodiments, a large portion of the support members 20 (i.e., more than 50%, preferably more than 75%, and more preferably more than 90%) may have the structure described herein. In some embodiments, substantially all of the support members 20 may have the structure described herein. Generally, a higher proportion of support members 20 on the substrate support 1 having the structure described herein increases the degree to which the advantages described below are achieved.

[0043]

[0042] In Figure 4, the support member 20 protrudes above the upper surface 11 of the substrate support 1. In this context, "above" may mean in the direction away from the main body 10 of the substrate support 1. The support member may be attached to the upper surface 11 of the main body 10 and may extend above the upper surface 11. That is, no part of the support member 20 may be located below the upper surface 11 of the main body 10. However, the present invention is not limited to this configuration. For example, the support member 20 may extend not only above the upper surface 11 but also below the upper surface 11. That is, a part of the support member 20 may be above the upper surface 11 and a part of the support member 20 may be located below the upper surface 11. Such configurations will be described in more detail below.

[0044]

[0043] The support member 20 includes a first portion 25 formed of a first material and a second portion 24 formed of a second material. With respect to a plurality of support members 20, the direction parallel to the upper surface 11 of the substrate support 1 is called the horizontal direction, and the direction perpendicular to the upper surface 11 of the substrate support 1 is called the vertical direction. The robustness of the second material in the horizontal direction (i.e., in the horizontal plane) can be less than the robustness of the first material in the horizontal direction (i.e., in the horizontal plane).

[0045]

[0044] The robustness of a material can be quantified by Young's modulus (E), also known as the modulus of elasticity. Young's modulus quantifies the relationship between the stress (σ) applied to the material and the proportional deformation (strain, ε) of the material, as shown in Equation 1. E=σ / ε Equation 1

[0046]

[0045] The stress is given by equation 2, where F is the force applied to the material and A is the cross-sectional area of ​​the material (in the direction perpendicular to the direction in which the force is applied). The strain is given by equation 3, where l is the initial length of the material and Δl is the change in the length of the material, and l and Δl are measured in the same direction as the direction in which the force is applied. σ = F / A Equation 2 ε = Δl / l Equation 3

[0047]

[0046] The Young's modulus of the second material in the horizontal direction (i.e., the direction horizontal to the top surface 11) can be smaller than the Young's modulus of the first material in the horizontal direction (i.e., the direction horizontal to the top surface 11). For example, the Young's modulus of the second material in the horizontal direction may be less than 10% of the Young's modulus of the first material in the horizontal direction. Taking this into consideration, the second material can be called a flexible material and the first material can be called a rigid material. Accordingly, the first part 25 can be called a rigid part and the second part 24 can be called a flexible part.

[0048]

[0047] By including a flexible portion in the support member 20, the horizontal rigidity of the support member 20 (i.e., rigidity in the direction horizontal to the upper surface 11) can be reduced. When the substrate W is loaded onto the substrate support WT, local sliding may occur between the distal end 22 of the support member 20 and the substrate W. This local sliding can cause in-plane deformation of the substrate, which can lead to overlay errors. The characteristic pattern of overlay caused by this is called the "wafer load grid (WLG)". When the substrate W is loaded onto the substrate support 1 equipped with a support member 20 with reduced horizontal rigidity, local sliding between the distal end 22 of the support member 20 and the substrate W is reduced. As a result, by providing a support member 20 with reduced horizontal rigidity, the overlay, particularly the residual wafer load grid (WLG), can be reduced (i.e., improved).

[0049]

[0048] The rigidity (k) of the support member 20 can be defined as shown in Equation 4. Here, F is the force applied to the support member, and x is the displacement of the support member 20 resulting from the applied force. k=F / x Equation 4

[0050]

[0049] With respect to the horizontal rigidity of the support member 20 (i.e., the rigidity of the support member 20 in the direction parallel to the upper surface 11), the support member 20 can be considered to be attached to the main body 10 of the substrate support 1. That is, the proximal end 21 of the support member 20 can be considered to be fixed. A force (F) can be applied to the distal end 22 of the support member 20 in the horizontal direction (i.e., in the direction parallel to the upper surface 11). Depending on the applied horizontal force, the support member 20 may be deflected. The displacement (x) can be the horizontal distance between the initial position of the distal end 22 of the support member 20 (i.e., the position of the distal end 22 of the support member 20 before the horizontal force is applied) and the deflected position of the distal end 22 of the support member 20.

[0051]

[0050] With respect to the vertical rigidity of the support member 20, in this case as well, the support member 20 can be considered to be attached to the main body 10 of the substrate support 1. That is, the proximal end 21 of the support member 20 can be considered to be fixed. A force (F) can be applied to the distal end 22 of the support member 20 in this case as well, but in terms of the vertical rigidity of the support member 20, the force can be applied in the vertical direction (i.e., in the direction perpendicular to the upper surface 11). Specifically, the force can be applied in the downward direction (i.e., in the same direction as the direction extending from the distal end 22 of the support member 20 to the proximal end 21 of the support member 1). That is, the vertical force can be a compressive force. In response to the application of a vertical force, the distal end 22 of the support member can be displaced downward. The displacement (x) can be the vertical distance between the initial position of the distal end 22 of the support member 20 (i.e., the position of the distal end 22 of the support member 20 before a vertical force is applied) and the compressed position of the distal end 22 of the support member 20.

[0052]

[0051] The robustness of the horizontal support member 20 can be less than 1 MN / m, preferably 0.1 MN / m, more preferably 0.05 MN / m, and even more preferably 0.02 MN / m. As described above, reducing the robustness of the horizontal support member 20 can reduce the residual wafer load grid (WLG) and reduce (i.e. improve) the overlay error.

[0053]

[0052] The rigidity of the horizontal support member 20 can be set to more than 5 kN / m. The reason for this is that if the rigidity of the support member 20 is excessively reduced, it may cause excessive horizontal deformation of the support member 20 (i.e., bending of the support member 20) when the substrate W is loaded onto the substrate support 1. Since the position of the proximal end 21 of the support member 20 is fixed, horizontal deflection of the support member 20 (i.e., bending of the support member 20) may cause vertical displacement at the distal end 22 of the support member 20. Specifically, horizontal deflection of the support member 20 may reduce the height of the support member 20. This may reduce the flatness of the substrate W supported by the substrate support 1, potentially increasing (i.e. worsening) the overlay error.

[0054]

[0053] The flexible portion is positioned between the rigid portion and the main body 11. That is, the rigid portion may be located above the flexible portion in the vertical direction. Such an arrangement of the flexible portion and the rigid portion may mean that the horizontal rigidity of the support member 20 can be reduced more effectively. Furthermore, if the support member 20 is formed only of the flexible portion and the rigid portion and no coating is applied to the outside of the support member 20, this arrangement means that the rigid portion is in contact with the underside of the substrate W. This is preferable to the case where the flexible portion is in contact with the underside of the substrate W. This is because the rigid material forming the rigid portion is likely to have higher hardness than the flexible material forming the flexible portion. Therefore, if the rigid portion is provided so that it is in contact with the underside of the substrate W rather than the flexible portion, wear can be reduced and the lifespan of the substrate support 1 can be extended.

[0055]

[0054] It is sometimes preferable to ensure that the vertical rigidity of the support member 20 remains relatively high, even though the horizontal rigidity of the support member 20 is reduced by providing a flexible portion. The reason for this is that, as described above, the displacement of the distal end 22 of the support member 20 when the substrate W is loaded onto the substrate support 1 is undesirable because it leads to an increase (i.e., deterioration) of the overlay error. Furthermore, the correlation between the vertical rigidity of the support member 20 and the residual wafer load grid (WLG) is not the same as the correlation between the horizontal rigidity of the support member 20 and the residual wafer load grid (WLG). That is, even if the support member 20 is given high vertical rigidity, it may not cause a large residual wafer load grid (WLG) and a large overlay error. Considering this, the vertical rigidity of the support member 20 can be greater than 0.1 MN / m, preferably greater than 0.5 MN / m, and even more preferably greater than 1 MN / m.

[0056]

[0055] However, it is sometimes preferable that the vertical rigidity of the support member 20 is not excessively high. For example, it is sometimes preferable that the vertical rigidity of the support member 20 be less than 1,000 MN / m, preferably less than 100 MN / m. This is because achieving such high vertical rigidity may increase the complexity required to achieve sufficiently low horizontal rigidity to effectively reduce overlay errors. Furthermore, reducing the vertical rigidity of the support member 20 may reduce the design complexity of the support member 20.

[0057]

[0056] Generally, it is preferable that the support member 20 has high vertical rigidity and low horizontal rigidity. For example, the horizontal rigidity of the support member 20 can be less than 10%, preferably less than 1%, and more preferably less than 0.1%, of the vertical rigidity of the support member 20. This means that the overlay error can be improved by reducing the residual wafer load grid (WLG) without contributing to the worsening of the overlay error as a result of vertical deformation of the support member 20.

[0058]

[0057] In order to obtain a support member 20 having the horizontal and vertical robustness described above, the Young's modulus of the horizontal flexible material can be less than 5%, preferably less than 2%, and more preferably less than 1%, of the Young's modulus of the horizontal rigid material.

[0059]

[0058] In some embodiments, the Young's modulus of the horizontally flexible material can be less than 10 GPa, preferably less than 5 GPa, more preferably less than 2.5 GPa, and greater than 0.001 GPa. By using a flexible material with a low horizontal Young's modulus, the horizontal rigidity of the support member 20 can be effectively reduced.

[0060]

[0059] The flexible material may include polymers. For example, the flexible material may include at least one of epoxy, silyl-modified polymers, and fluororubber (e.g., FKM). However, the flexible material is not limited to these examples, and any material having properties that satisfy the robustness requirements of the present invention may be used.

[0061]

[0060] The rigid material may include at least one of SiSiC, lithium aluminosilicate glass ceramic, ZeroDua®, cordierite, SiC, or diamond SiSiC. However, as will be recognized by those skilled in the art, the rigid material is not limited to these examples, and any rigid material that provides the robustness requirements defined above may be used.

[0062]

[0061] Flexible and rigid materials may need to be suitable for use in a lithography apparatus. That is, flexible and rigid materials may need to be vacuum-compatible. For example, flexible and rigid materials may need to release gases of contaminants that are harmful to components in the lithography apparatus when placed in a vacuum environment.

[0063]

[0062] Figure 5 shows a cross-sectional view of a support member 20 of a substrate support 1 according to the present invention. The support member 20 shown in Figure 5 represents a first embodiment of the present invention. The support member 20 is attached to the upper surface 11 of the main body 10 and protrudes above the upper surface 11 of the main body 10. The support member 20 shown in Figure 5 does not extend below the upper surface 11. However, in some embodiments, the support member 20 on the substrate support 1 according to the first embodiment of the present invention may extend below the upper surface 11.

[0064]

[0063] As shown in Figure 5, the support member 20 includes four parts. That is, the support member 20 shown in Figure 5 includes a first part 25, a second part 24, a third part 27, and a fourth part 26. In the support member 20 shown in Figure 5, the first part 25 and the second part 24 can be as described above. That is, the first part 25 may be a rigid part formed of a rigid material, and the second part 24 may be a flexible part formed of a flexible material. In the following description, the first part 25 may be called the lower rigid part, and the second part 24 may be called the lower flexible part. The third part 27 may be another rigid part. The third part 27 may be called the upper rigid part. The fourth part 26 may be another flexible part. The fourth part 26 may be called the upper flexible part.

[0065]

[0064] As shown in Figure 5, portions 24, 25, 26, and 27 can be arranged such that the composition of the support member 20 alternates vertically. That is, starting from the bottom of the support member 20 (the proximal end 21 of the support member 20) and moving upward (towards the distal end 22 of the support member 20), the composition of the support member 20 can be flexible material-rigid material-flexible material-rigid material.

[0066]

[0065] Each of the portions 24, 25, 26, and 27 of the support member 20 can be described as a layer. Each layer can be substantially parallel to the upper surface 11 of the substrate support 1. That is, each portion 24, 25, 26, and 27 can be a horizontal layer. With this in mind, the support member 20 may include alternating horizontal layers. That is, starting from the bottom of the support member 20 (the proximal end 21 of the support member 20) and moving upward (towards the distal end 22 of the support member 20), the composition of the support member 20 can be flexible layer-rigid layer-flexible layer-rigid layer.

[0067]

[0066] The support member 20 shown in Figure 5 includes four layers, namely parts 24, 25, 26, and 27, but the number of layers in the support member 20 is not particularly limited. For example, the number of layers may be two (one rigid layer and one flexible layer). The number of layers in the support member 20 can be four or more, preferably six or more. By providing a support member 20 with such a number of layers, the horizontal rigidity of the support member 20 can be effectively reduced. The number of layers in the support member 20 can also be 20 or less, preferably 10 or less. This is because adding an excessive number of layers may not improve the effectiveness of reducing the horizontal rigidity of the support member 20. Furthermore, increasing the number of layers may mean that the manufacturing process becomes more difficult, time-consuming, and costly. Therefore, providing an excessive number of layers may negatively impact the manufacturing process without providing any advantages to the properties of the support member 20.

[0068]

[0067] When there are three or more layers, the arrangement of these layers is not particularly limited. For example, in a support member 20 having four layers, the composition of the support member 20 can be rigid layer-flexible layer-rigid layer-flexible layer, starting from the bottom of the support member 20 (the proximal end 21 of the support member 20) and moving upward (towards the distal end 22 of the support member 20). That is, the bottom layer may be a rigid layer and the top layer may be a flexible layer. According to the present invention, it may be sufficient to place one of the flexible layers below one of the rigid layers.

[0069]

[0068] Each layer may have a thickness measured from the bottom surface of the layer to the top surface of the layer, i.e., a vertical height. The thickness of the upper rigid layer may be a first thickness h1. The thickness of the upper flexible layer may be a second thickness h2. Each rigid layer may have the same thickness h1, and each flexible layer may have the same thickness h2. However, this is not essential to the present invention.

[0070]

[0069] The thickness of each layer is not particularly limited. However, the thickness h2 of the flexible layer may need to be sufficient to ensure that the presence of the flexible layer affects the bulk properties of the support member 20. That is, the thickness h2 of the flexible layer may need to be sufficiently large so that the horizontal rigidity of the support member 20 can be reduced to the extent described above. Taking this into consideration, in some embodiments, the thickness of the flexible layer can be greater than 10 μm, preferably greater than 25 μm, and more preferably greater than 40 μm.

[0071]

[0070] In addition, it may be necessary to limit the thickness of the flexible layer in order to ensure that the support member 20 maintains its ability to effectively support the substrate W without excessive deformation. If the thickness of the flexible layer is too large, the horizontal and / or vertical rigidity of the support member 20 may be excessively reduced, which may lead to an increase in overlay errors as described above. Taking this into consideration, in some embodiments, the thickness of the flexible layer can be less than 100 μm, preferably less than 75 μm, and more preferably less than 60 μm.

[0072]

[0071] The thickness of the rigid layer can be the same as the thickness of the flexible layer. However, this is not required. In some embodiments, the thickness of the rigid layer can be greater than 10 μm, preferably greater than 25 μm, and more preferably greater than 40 μm. Furthermore, the thickness of the rigid layer can be less than 100 μm, preferably less than 75 μm, and more preferably less than 60 μm.

[0073]

[0072] Generally, the support members 20 typically used in the substrate support 1 are formed of a rigid material. In the present invention, a flexible material is added to the structure of the support member 20 to reduce the horizontal rigidity of the support member 20. That is, providing a flexible material within the structure of the support member 20 affects the bulk properties of the support member 20. Considering this, the proportion of the support member 20 formed of a flexible material must be sufficiently high in order to affect the bulk properties of the support member 20 to the extent that the desired reduction in horizontal rigidity can be achieved. A configuration in which a thin layer of flexible material is applied as a coating may not be able to affect the bulk properties of the support member 20 in this way. Therefore, in the present invention, the flexible layer may not be a coating layer.

[0074]

[0073] Furthermore, to ensure that providing a flexible layer within the support member 20 has the desired effect on the horizontal rigidity of the support member 20, the volume ratio of the flexible material to the rigid material can be considered. In some embodiments, the volume ratio of the flexible material to the rigid material can be greater than 0.25, preferably greater than 0.5, and more preferably greater than 0.75. This can ensure that providing a flexible material within the support member 20 can reduce the horizontal rigidity of the support member 20 as desired. Furthermore, the volume ratio of the flexible material to the rigid material can be less than 5, preferably less than 2, and more preferably less than 1.5. This can ensure that the support member 20 can support the substrate W within excessive deformation that could lead to an increase in overlay error as described above.

[0075]

[0074] The flexible material can be anisotropic. That is, the properties of the flexible material may not be the same in each direction. Specifically, the rigidity (Young's modulus) of the flexible material in the vertical direction can be greater than that of the flexible material in the horizontal direction. By using a flexible material that is more rigid in the vertical direction than in the horizontal direction, the rigidity of the support member 20 in the horizontal direction can be effectively reduced without substantially reducing the rigidity of the support member 20 in the vertical direction. The rigidity of the flexible material may differ between the horizontal and vertical directions. For example, the rigidity of the flexible material may be greater in the vertical direction than in the horizontal direction. By using such an anisotropic material as the flexible material, the rigidity of the support member 20 in the horizontal direction can be reduced, while a significant reduction in the rigidity of the support member 20 in the vertical direction can be avoided. Therefore, by using such an anisotropic material as the flexible material, the support member 20 can have high rigidity in the vertical direction and low rigidity in the horizontal direction. This means that the residual wafer load grid (WLG) can be reduced without contributing to an increase (i.e., worsening) of the overlay error as a result of vertical deformation of the support member 20.

[0076]

[0075] Flexible materials can be composite materials. Due to the combined properties of the flexible material, it can have anisotropic properties. Composite materials can be configured to have the anisotropy described above (i.e., higher rigidity in the vertical direction than in the horizontal direction).

[0077]

[0076] The composite material may include a matrix 28 and reinforcing members 29. The material on which the reinforcing members 29 are formed may have higher rigidity than the material on which the matrix 28 is formed. That is, the Young's modulus of the material on which the reinforcing members 29 are formed can be higher than the Young's modulus of the material on which the matrix 28 is formed.

[0078]

[0077] In the composite material, the reinforcing member 29 can be provided within the flexible layer so as to extend substantially over the entire thickness of the flexible layer. For example, as shown in Figure 5, the reinforcing member 29 in the lower flexible layer contacts the upper surface 11 of the substrate support 1 and the lower surface of the lower rigid layer, and the reinforcing member 29 in the upper flexible layer contacts the upper surface of the lower rigid layer and the lower surface of the upper rigid layer. In this case, the vertical force applied to the distal end 22 of the support member 20 can be transmitted through the upper rigid layer, the reinforcing member 29 in the upper flexible layer, the lower rigid layer, and the reinforcing member 29 in the lower flexible layer. That is, the vertical load applied to the distal end 22 of the support member 20 can be supported by the rigid material. Thus, despite the inclusion of flexible material, the vertical rigidity of the support member 20 can be maintained at a high level. Furthermore, the provision of such reinforcing members 29 does not mean that a reduction in the horizontal rigidity of the support member 20 cannot be achieved. In other words, providing the reinforcing member 29 as described above does not increase the horizontal rigidity of the support member 20 to the same extent as increasing the vertical thickness of the support member 20. Therefore, by using such a composite as the flexible material, the support member 20 can have high vertical rigidity and low horizontal rigidity. This means that the residual wafer load grid can be reduced without contributing to an increase (i.e., worsening) of overlay error as a result of vertical deformation of the support member 20.

[0079]

[0078] In composite materials, the matrix 28 may have a low Young's modulus. For example, the Young's modulus of the material can be less than 10 GPa, preferably less than 5 GPa, and more preferably less than 2.5 GPa. The matrix 28 may be a polymer. For example, the matrix 28 may include epoxy, silyl-modified polymers, and FKN.

[0080]

[0079] The reinforcing member 29 can be spherical. For example, each flexible layer may include a two-dimensional array of spheres dispersed throughout the flexible layer. However, the reinforcing member 29 is not limited to this form and may have other shapes, such as a cylinder. The material on which the reinforcing member 29 is formed may be any suitable material having a high Young's modulus. For example, the material on which the reinforcing member 29 is formed may include at least one of glass, ceramic, and metal.

[0081]

[0080] If the reinforcing member 29 is a sphere, the diameter of the sphere can be approximately equal to the thickness of the flexible layer. This means that, as described above, the sphere extends substantially over the entire thickness of the flexible layer.

[0082]

[0081] The height H of the support member 20 can be greater than the height of the support member 20 typically used in the substrate support 1. The height H can be defined by the distance from the upper surface 11 of the support member 20 to the distal end 22 of the support member 20. The height of the support member 20 can be greater than 100 μm, for example 150 μm, preferably greater than 250 μm, and more preferably greater than 500 μm. Forming a support member 20 of this height means that a flexible portion can be placed within the support member 20 so that the horizontal rigidity of the support member 20 can be reduced as desired. That is, if the height of the support member 20 is not sufficiently large, it may not be possible to significantly reduce the horizontal rigidity of the support member 20. Furthermore, the height of the support member 20 can be less than 1,500 μm, preferably less than 750 μm, and more preferably less than 600 μm, for example 500 μm. This may be to allow for simplification of the manufacturing process.

[0083]

[0082] Similarly, the diameter D of the support member 20 can be larger than the diameter of the support member 20 typically used in the substrate support 1. The diameter D can be the maximum diameter of the support member 20. For example, if the support member 20 is frustoconical, the diameter D can be the diameter at the proximal end 21 of the support member 20. The diameter of the support member 20 can be greater than 100 μm, preferably greater than 250 μm, and more preferably greater than 500 μm. This can ensure that the support member 20 is structurally stable. The diameter of the support member 20 can be less than 2000 μm, preferably less than 1,500 μm, preferably less than 1,000 μm, and more preferably less than 750 μm. This can ensure that the horizontal rigidity of the support member 20 can be reduced as desired by providing a flexible material within the structure of the support member 20.

[0084]

[0083] Figure 6 shows a cross-sectional view of the support member 20 of the substrate support 1 according to the present invention. The support member 20 can be a support member 20 according to a second embodiment of the present invention. As shown in Figure 6, the support member 20 protrudes above the upper surface 11 of the substrate support 1. As will be explained below, the support member 20 also protrudes below the upper surface 11.

[0085]

[0084] Similar to the first embodiment, the support member 20 includes a second portion, i.e., a flexible portion 34, and a first portion, i.e., a rigid portion 35. As shown in Figure 6, the body 10 of the substrate support 1 includes a recess 14. The support member 20 is at least partially located within the recess 14. This means that a portion of the support member 20 may be located below the upper surface 11 of the substrate support 1, and a portion of the support member 20 may protrude above the upper surface 11 of the substrate support 1.

[0086]

[0085] The flexible portion 34 is positioned between the rigid portion 35 and the main body 10. Therefore, the flexible portion 34 can be positioned at least partially within the recess 14. As shown in Figure 6, the upper surface of the flexible portion 34 is substantially coplanar with the upper surface 11 of the main body. However, the present invention is not limited to this configuration. For example, by positioning the upper surface of the flexible portion 34 below the upper surface 11 of the main body, a portion of the rigid portion 35 can also be positioned below the upper surface 11 of the main body. Alternatively, by positioning the upper surface of the flexible portion 34 above the upper surface 11 of the main body 10, a portion of the flexible portion 34 can be positioned above the upper surface 11 of the main body 10.

[0087]

[0086] The flexible portion 34 can function as a flexible base for the support member 20. This base can be housed (i.e., enclosed) within the recess 14. The dimensions of the flexible portion 34 can be substantially the same as the dimensions of the recess 14. For example, the diameter of the recess 14 is the diameter D of the portion of the support member 20 located below the upper surface 11 of the substrate support 1. b This can be made approximately equal. The fit between the flexible portion 34 and the recess 14 may be, for example, a press fit or a press fit. This arrangement means that providing the flexible portion 34 in the recess 14 can reduce the horizontal rigidity of the support member 20 without substantially affecting the vertical rigidity of the support member 20. In other words, an extremely high ratio of the vertical rigidity of the support member 20 to the horizontal rigidity of the support member 20 can be achieved.

[0088]

[0087] Height H of the support member 20 above the upper surface 11 of the substrate support 1 A and diameter D A The height H and diameter D may be the same as those considered in relation to the first embodiment.

[0089]

[0088] The depth of the recess 14 can be greater than 100 μm, preferably greater than 150 μm, and more preferably greater than 175 μm. This can ensure that the effect of the flexible base on the horizontal rigidity of the support member 20 is sufficient to reduce the horizontal rigidity of the support member 20 as desired. The depth of the recess 14 can be less than 300 μm, preferably less than 250 μm, and preferably less than 225 μm. This can ensure that the horizontal rigidity of the support member 20 is not excessively reduced, and that the effect of the flexible base on the vertical rigidity of the support member 20 is not excessive.

[0090]

[0089] The material on which the body 10 is formed may include at least one of SiSiC, lithium aluminosilicate glass ceramic, ZeroDua®, cordierite, SiC, or diamondSiSiC. However, the material on which the body 10 is formed is not limited to these examples.

[0091]

[0090] In each of the first and second embodiments, the rigid material of the first portion 25 or rigid portion 35 may be the same as the material from which the main body 10 of the substrate support 1 is formed. Furthermore, the material used for the reinforcing members (if provided) may be the same as the material used for the main body 10 and the rigid material. For example, the main body 10 of the substrate support 1, the rigid material, and the reinforcing members 29 may all be made of SiSiC. This simplifies the manufacturing process. It also simplifies the requirements for monitoring and controlling contamination.

[0092]

[0091] Although the first and second embodiments have been described separately, their features are not mutually exclusive. That is, features of the first embodiment can be added to the second embodiment, and vice versa. For example, one embodiment of the present invention may include a support member 20 having a flexible base enclosed within a recess 14 and layers of flexible and rigid material alternately arranged above the upper surface 11 of the main body 10.

[0093]

[0092] A substrate support 1 according to the present invention can be manufactured using any suitable method. For example, a method for manufacturing a substrate support 1 may include depositing plates on the upper surface 11 of the body 10 of the substrate support 1. The plates may correspond to portions of the support member 20 to be formed. That is, the plates may have the same thickness as portions of the support member 20 formed on the substrate support 1, be made of the same material, and be arranged in the same configuration. For example, to form the support member 20 shown in Figure 5, a first flexible plate may be deposited on the upper surface 11 of the body 10, a first rigid plate may be deposited on the first flexible plate, a second flexible plate may be deposited on the first rigid plate, and a second rigid plate may be deposited on the second flexible plate. The plates may be deposited on the entire or substantially entire upper surface 11 of the body 10. After the plates have been deposited, the material can be removed from the substrate support 1 to form the support member 20. That is, the material can be removed from areas where the support member 20 is not intended to be present to form the support member 20. Any suitable subtractive manufacturing technique can be used to form the support member 20. For example, the subtractive manufacturing technique may include the use of a laser.

[0094]

[0093] In a substrate support 1 having a support member 20, such as the support member 20 shown in Figure 6 (i.e., a support member 20 having a flexible portion 34 positioned below the upper surface 11 of the main body 10), the manufacturing process may include the step of forming a recess 14 in the upper surface 11 of the main body 10. This can be achieved by using any suitable subtractive manufacturing process. For example, subtractive manufacturing techniques may include the use of a laser.

[0095]

[0094] Figure 7 illustrates the advantageous effects of the present invention. Figure 7 shows a plot of overlay error (O) against warp (W) of support members 20 having different horizontal rigidity. The horizontal rigidity values ​​can be in units of N / m. These values ​​were obtained by finite element analysis (FEA). The finite element model used is as described above with respect to the definitions of horizontal and vertical rigidity. As shown in Figure 7, the resulting overlay error may depend on the warp (both magnitude and direction) of the substrate W. As the horizontal rigidity of the support member 20 decreases, the overlay error for a given substrate warp decreases. This is because, for a support member 20 with a horizontal rigidity of 0.01 MN / m (1.0E+04 N / m), there is an extremely small overlay error (less than approximately 0.02 nm) regardless of the magnitude of the substrate warp.

[0096]

[0095] The present invention can provide a lithography apparatus. The lithography apparatus may have any / all of the other features or components of the lithography apparatus described above. For example, the lithography apparatus may optionally include at least one of the following: a radiation source SO, an illumination system IL, a projection system PS, a substrate support WT, etc.

[0097]

[0096] Specifically, the lithography apparatus may include a projection system PS configured to project the radiation beam B toward a region of the surface of the substrate W. The lithography apparatus may further include a substrate support 200 as described in any of the embodiments and variations described above.

[0098]

[0097] Although this text specifically refers to the use of lithography equipment in the manufacture of ICs, it should be understood that the lithography equipment described herein may have other applications. Possible other applications include the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memory, flat panel displays, liquid crystal displays (LCDs), thin-film magnetic heads, and the like.

[0099]

[0098] Where permitted by context, embodiments of the present invention may be implemented in hardware, firmware, software, or any combination thereof. Embodiments of the present invention may also be implemented as instructions stored in a machine-readable medium that can be read and executed by one or more processors. A machine-readable medium may include any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computing device). For example, a machine-readable medium may include read-only memory (ROM), random access memory (RAM), magnetic storage media, optical storage media, flash memory devices, the electrical, optical, acoustic, or other form of a propagating signal (e.g., carrier waves, infrared signals, digital signals, etc.), and others. Furthermore, firmware, software, routines, and instructions may be described herein as performing a particular action. However, such descriptions are merely for convenience, and it will be acknowledged that such actions are actually obtained as a result of a computing device, processor, controller, or other device executing firmware, software, routines, instructions, etc., and causing an actuator or other device to interact with the material world at runtime.

[0100]

[0099] Although embodiments of the present invention are referred to in the context of lithography apparatus in this text, embodiments of the present invention may also be used in other apparatuses. Embodiments of the present invention may form part of a mask inspection apparatus, a metrology apparatus, or any apparatus for measuring or processing objects such as wafers (or other substrates) or masks (or other patterning devices). These apparatuses may generally be referred to as lithography tools.

[0101]

[0100] Although the above has specifically referred to the use of embodiments of the present invention in the context of photolithography, it will be acknowledged that the present invention is not limited to photolithography, as the context allows.

[0102]

[0101] Although specific embodiments of the present invention have been described above, it will be acknowledged that the present invention may be carried out in ways other than those described. The above description is intended to be illustrative and not limiting. Accordingly, it will be acknowledged to those skilled in the art that modifications to the described invention may be made without departing from the claims set forth below.

Claims

1. A main body having an upper surface, Multiple support members protruding above the aforementioned upper surface, The support members include, and one or more of the support members include a first portion made of a first material and a second portion made of a second material. The second part is positioned between the first part and the main body. A substrate support in which the Young's modulus of the second material in a direction parallel to the upper surface is less than 10% of the Young's modulus of the first material in a direction parallel to the upper surface.

2. The substrate support according to claim 1, wherein the Young's modulus of the second material in a direction parallel to the upper surface is less than 5%, preferably less than 2%, and more preferably less than 1% of the Young's modulus of the first material in a direction parallel to the upper surface, and / or the Young's modulus of the second material in a direction parallel to the upper surface is less than 10 GPa, preferably less than 5 GPa, more preferably less than 2.5 GPa, and greater than 0.001 GPa, and / or the Young's modulus of the second material in a direction parallel to the upper surface is smaller than the Young's modulus of the second material in a direction perpendicular to the upper surface.

3. The substrate support according to any one of claims 1 to 2, wherein the robustness of one or more of the support members in a direction parallel to the upper surface is less than 10%, preferably less than 1%, more preferably less than 0.1%, of the robustness of one or more of the support members in a direction perpendicular to the upper surface, and / or the robustness of one or more of the support members in a direction parallel to the upper surface is less than 1 MN / m, preferably less than 0.1 MN / m, more preferably less than 0.05 MN / m, more preferably less than 0.02 MN / m, and more than 5 kNm / m, and / or the robustness of one or more of the support members in a direction perpendicular to the upper surface is more than 0.1 MN / m, preferably more than 0.5 MN / m, more preferably more than 1 MN / m, more preferably more than 10 MN / m, less than 1,000 Nm / m, preferably less than 100 MN / m.

4. The substrate support according to any one of claims 1 to 3, wherein the second material comprises a polymer and / or the second material comprises at least one of epoxy, silyl-modified polymer, and FKM, and / or the first material comprises at least one of SiSiC, lithium aluminosilicate glass ceramic, cordierite, SiC, or diamond SiSiC.

5. The substrate support according to any one of claims 1 to 4, wherein the height of one or more of the support members with respect to the upper surface is greater than 100 μm, preferably greater than 250 μm, more preferably greater than 500 μm, less than 1,500 μm, preferably less than 750 μm, and / or the diameter of one or more of the support members is greater than 100 μm, preferably greater than 250 μm, more preferably greater than 500 μm, less than 1,500 μm, preferably less than 1,000 μm, and more preferably less than 750 μm.

6. The first portion is a first layer substantially parallel to the upper surface, and the second portion is a second layer substantially parallel to the upper surface. A substrate support according to any one of claims 1 to 5.

7. One or more of the support members include one or more additional layers in which the material on which the support member is formed is arranged such that the first material and the second material are arranged alternately in the vertical direction, and / or the number of layers is four or more, preferably six or more, 20 or less, preferably 10 or less, and / or the thickness of the second layer is greater than 10 μm, preferably greater than 25 μm, more preferably greater than 40 μm, less than 100 μm, preferably less than 75 μm, and even more preferably less than 60 μm, and / or the thickness of the first layer is greater than 10 μm, preferably greater than 25 μm, more preferably greater than 40 μm, less than 100 μm, preferably less than 75 μm, and even more preferably less than 60 μm, and / or the volume ratio of the second layer to the first layer in one or more of the support members is greater than 0.25, preferably greater than 0.5, even more preferably greater than 0.75, less than 5, preferably less than 2, and even more preferably less than 1.5, the substrate support according to claim 6.

8. The substrate support according to any one of claims 1 to 7, wherein the second material is a composite material and / or the second material comprises a matrix and a reinforcing member, the Young's modulus of the reinforcing member being greater than the Young's modulus of the matrix.

9. The substrate support according to claim 8, wherein the reinforcing member is provided within the second layer so as to extend substantially over the entire thickness of the second layer, and / or the matrix is ​​a polymer, and / or the reinforcing member comprises a sphere, and / or the material on which the reinforcing member is formed comprises at least one of glass, ceramic, and metal, and preferably the diameter of the sphere is substantially equal to the thickness of the second layer.

10. The substrate support according to any one of claims 1 to 9, wherein the upper surface includes a plurality of recesses, and one or more of the support members are arranged in one or more recesses, such that one or more of the second portions of the support members are at least partially below the upper surface and one or more of the first portions of the support members are at least partially above the upper surface.

11. The substrate support according to claim 10, wherein the diameter of one or more of the recesses is substantially equal to the diameter of one or more of the lower parts of the support member, and / or the depth of one or more of the recesses is greater than 100 μm, preferably greater than 150 μm, more preferably greater than 175 μm, less than 300 μm, preferably less than 250 μm, and even more preferably less than 225 μm.

12. The substrate support according to any one of claims 1 to 11, wherein the distal ends of the plurality of support members are configured to form a support surface capable of supporting a substrate in a lithography apparatus, and / or the first material includes the same material as that of the main body.

13. A lithography apparatus comprising a substrate support according to any one of claims 1 to 12.

14. A method for manufacturing a device, comprising supporting a substrate on a substrate support, wherein the substrate support is a substrate support according to any one of claims 1 to 12.

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