High-temperature stable dielectric composition

Abstract

The present invention provides a dielectric composition containing the main and minor components of a barium titanate-based matrix. [Solution] The dielectric composition comprises at least one of the following subcomponents: a first subcomponent which is an oxide or carbonate of Yb; a second subcomponent which is an oxide or carbonate of Dy and Y; a third subcomponent which is an oxide containing Ba and Zr; a fourth subcomponent which is an oxide or carbonate of Mg; a fifth subcomponent which may be an oxide or carbonate of V, Mn and Cr; and a sixth subcomponent which may be an oxide or carbonate of Si, wherein at least one subcomponent comprises the first subcomponent, the second subcomponent, and the third subcomponent, and satisfies the X7R characteristics specified in the EIA standard.

Description

Technical Field

[0001] The present invention relates to a dielectric composition having high-temperature stability, and particularly to a dielectric composition satisfying X7R characteristics.

Background Art

[0002] Multi-layer ceramic chip capacitors have high capacitance and high reliability, and their size is relatively small, and they are widely used in fields such as automobiles and motors where accuracy and stability are required.

[0003] For multilayer ceramic capacitors, there are requirements for various factors such as capacitance, temperature stability, and voltage stability. In particular, in the case of multilayer ceramic capacitors for electrical equipment used in automobiles, since they operate at high temperatures, their capacitance (capacitance) must not change even at high temperatures. In this regard, the Electronic Industries Association (EIA) of the United States has defined that when the change in capacitance of a multilayer ceramic capacitor at a temperature of -55 degrees Celsius to 125 degrees Celsius is within ±15% of the reference capacitance at 25 degrees Celsius, it satisfies the X7R characteristics.

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present invention is to provide a dielectric composition satisfying the X7R standard.

Means for Solving the Problems

[0005] A dielectric composition according to one aspect of the present invention, made to achieve the above objective, comprises a main component and minor components of a barium titanate base material, the minor components comprising: a first minor component comprising one or more elements selected from the group consisting of oxides and carbonates of one or more elements from Yb, Sc, Lu, and Tm; a second minor component comprising one or more elements selected from the group consisting of oxides and carbonates of one or more elements from Dy, Y, Ho, Tb, Gd, Eu, and Er; a third minor component comprising one or more elements selected from the group consisting of oxides including Ba and Zr; a fourth minor component comprising one or more elements selected from oxides and carbonates of a valence-fixed acceptor element including Mg; and from among V, Mn, Cr, Fe, Ni, Co, Cu, and Zn The material comprises at least one of the following subcomponents: a fifth subcomponent comprising one or more valence-variable acceptor elements selected from the group consisting of oxides and carbonates, and a sixth subcomponent comprising one or more elements selected from the group consisting of oxides, carbonates and glass of the element Si; the at least one subcomponent comprises a first subcomponent, a second subcomponent, and a third subcomponent; the content of one or more elements in the first subcomponent is 0.2 to 6 moles per 100 moles of the main component of the base material; the content of one or more elements in the second subcomponent is 0.2 to 6 moles per 100 moles of the main component of the base material; and the content of the third subcomponent is 4 to 6 moles per 100 moles of the main component of the base material. [Effects of the Invention]

[0006] The dielectric composition according to the present invention satisfies the X7R characteristic of the EIA standard. [Brief explanation of the drawing]

[0007] [Figure 1] This is a perspective view showing a multilayer ceramic capacitor according to an embodiment of the present invention. [Figure 2] This is a perspective view showing multiple electrode units of a multilayer ceramic capacitor according to an embodiment of the present invention. [Modes for carrying out the invention]

[0008] Hereinafter, the most preferred embodiments of the present invention will be described with reference to the drawings in order to explain in detail to the extent that a person with ordinary skill in the art to which the present invention pertains can easily implement the technical idea of ​​the present invention. First, in assigning reference numerals to the components in each drawing, the same components will be given the same reference numeral as much as possible, even if they are shown in other drawings. Furthermore, in explaining the present invention, if it is determined that a specific description of a related known configuration or function may obscure the gist of the present invention, such a detailed description will be omitted.

[0009] The present invention relates to dielectric compositions, and electronic components containing dielectric compositions include capacitors, inductors, piezoelectric elements, varistors, and thermistors. Below, a multilayer ceramic capacitor (MLCC) will be described as an example of a dielectric composition and electronic component.

[0010] <Multilayer ceramic capacitors>

[0011] Figure 1 is a perspective view showing a multilayer ceramic capacitor according to an embodiment of the present invention, and Figure 2 is a perspective view showing multiple electrode units of a multilayer ceramic capacitor according to an embodiment of the present invention.

[0012] Referring to Figure 1, the multilayer ceramic capacitor according to an embodiment of the present invention comprises a dielectric 100, a first external electrode 220, and a second external electrode 240.

[0013] The dielectric 100 is a rectangular parallelepiped having a top surface, a bottom surface, a first side surface, a second side surface facing the first side surface, a third side surface, and a fourth side surface facing the third side surface. The first side surface is the left side in the drawing, the second side surface is the right side in the drawing, the third side surface is the front surface in the drawing, and the fourth side surface is the rear surface in the drawing.

[0014] The dielectric 100 includes a plurality of dielectric sheets. The plurality of dielectric sheets are stacked. Each dielectric sheet contains a dielectric composition and is formed by sintering the dielectric composition.

[0015] The first external electrode 220 is an electrode positioned on the first side surface of the dielectric 100. The first external electrode 220 is formed extending from the first side surface of the dielectric 100 to the top, bottom, third, and fourth sides of the dielectric 100. The second external electrode 240 is an electrode positioned on the second side surface of the dielectric 100. The second external electrode 240 is formed extending from the second side surface of the dielectric 100 to the top, bottom, third, and fourth sides of the dielectric 100. The first external electrode 220 and the second external electrode 240 are formed to face each other at a predetermined distance apart from the top, bottom, third, and fourth sides of the dielectric 100.

[0016] Referring to Figure 2, the multilayer ceramic capacitor according to an embodiment of the present invention further includes a plurality of electrode units 300. In this case, the plurality of electrode units 300 are stacked to form a laminate, and this laminate is placed inside the dielectric 100.

[0017] Multiple electrode units 300 are stacked vertically in the drawing and arranged inside the dielectric 100. Each electrode unit 300 includes a first electrode set 320 and a second electrode set 340, and the first electrode set 320 and the second electrode set 340 are stacked alternately.

[0018] The first electrode set 320 is composed of a rectangular, plate-shaped conductor. The first electrode set 320 is positioned inside the dielectric 100, biased towards the first side surface of the dielectric 100. The first end of the first electrode set 320 is connected to the first external electrode 220 on the first side surface of the dielectric 100.

[0019] The second electrode set 340 is composed of a plate-shaped conductor formed in a rectangular shape. The second electrode set 340 is disposed biased toward the second side surface of the dielectric 100 inside the dielectric 100. The first end portion of the second electrode set 340 is connected to the second external electrode 240 on the second side surface of the dielectric 100.

[0020] The first electrode set 320 and the second electrode set 340 are respectively and dispersedly disposed on two adjacent dielectric sheets among the dielectric sheets included in the dielectric 100. The first electrode set 320 and the second electrode set 340 partially overlap with each other with the dielectric sheet interposed therebetween.

[0021] <Dielectric Composition and Method for Producing the Same>

[0022] Hereinafter, the dielectric composition and the method for producing the same according to the embodiments of the present invention will be described in detail. The dielectric composition forms the dielectric 100 described above. However, in order to avoid redundant description, the content overlapping with the above-described content will be omitted.

[0023] The dielectric composition according to the embodiments of the present invention contains a main component of a base material containing a rare earth element. The main component of the base material is a barium titanate-based compound containing Ba and Ti, and preferably BaTiO3. Further, the dielectric composition according to the embodiments of the present invention additionally contains sub-components, and the sub-components may include first to sixth sub-components.

[0024] The dielectric composition according to the embodiments of the present invention contains the sub-components in Table 1 per 100 moles of the base material BaTiO3.

[0025]

Table 1

[0026] For the dielectric material of multilayer ceramic capacitors for AC circuits, compositions with C0G characteristics were mainly used. These C0G compositions use (CaSr)(TiZr)O3, a low dielectric constant material, as the main raw material. Such C0G compositions are paraelectric and have excellent electrostrictive properties, a loss coefficient (DF) of 0.004, a sintering temperature of 1260°C, and very little change in capacitance with temperature. However, their dielectric constant is low, around 30, making it difficult to achieve high capacitance. Therefore, when higher capacitance is required, compositions are used in which BaTiO3 is excessively doped with BaZrO3 and rare earth substances (such as Gd2O3) to lower the Curie temperature. Such compositions have a cubic structure at room temperature.

[0027] Thus, it has been revealed that compositions in which BaTiO3 is excessively doped with BaZrO3 and rare earth substances (such as Gd2O3) have a dielectric constant of 800, a loss factor (DF) of 0.02, and a sintering temperature of 1200°C. Compared to existing compositions with C0G characteristics, these compositions have a relatively high dielectric constant and excellent electrostrictive properties. However, compared to general compositions with X7R characteristics, the dielectric constant is significantly lower, and it is currently difficult to achieve high capacitance with these compositions.

[0028] To address this, the dielectric composition according to the embodiment of the present invention is characterized by having a higher dielectric constant than existing compositions with C0G characteristics and compositions in which BaTiO3 is excessively doped with BaZrO3 and rare earth substances (such as Gd2O3), while satisfying the X7R criterion which must vary within the range of 15% to -15%, and having a low loss coefficient of less than 0.01, making it suitable for AC circuits. The dielectric composition according to the embodiment of the present invention has a relatively high dielectric constant which is advantageous for realizing capacitance, and has superior electrostrictive characteristics and a low loss coefficient compared to existing compositions with X7R characteristics, making it suitable for AC circuits.

[0029] The components of the dielectric composition according to the embodiments of the present invention will be described in more detail below.

[0030] <Main components of the base material>

[0031] The dielectric composition according to the embodiment of the present invention contains the main components of a base material including Ba and Ti. In the embodiment, the main component of the base material is BaTiO3.

[0032] The main component of the base material is included in the dielectric composition in powder form. The average particle size of the main component powder of the base material is not particularly limited, but is 1000 nm or less. Preferably, the average particle size of the main component powder of the base material is 200 nm to 350 nm, and more preferably 250 nm.

[0033] <1st subcomponent>

[0034] The dielectric composition according to the embodiment of the present invention contains, as a first minor component, one or more elements selected from the group consisting of oxides and carbonates of one or more elements from Yb, Sc, Lu, and Tm. Preferably, the first minor component is one or more elements selected from the group consisting of oxides and carbonates of element Yb, but is not limited thereto. Alternatively, instead of element Yb, the first minor component may contain one or more elements selected from the group consisting of oxides and carbonates of one or more other rare earth elements from Sc, Lu, and Tm.

[0035] The first minor component is present in an amount of 0.2 to 6 moles per 100 moles of the main component of the base material. The content of the first minor component is based on the content of one or more elements contained in the first minor component, without distinguishing between the additive form, such as oxide or carbonate. For example, the total content of elements contained in the first minor component is 0.2 to 6 moles per 100 moles of the main component of the base material. As an example, if the first minor component is Yb2O3, and we assume that there are 2 moles of Yb2O3 per 100 moles of BaTiO3, then there are 4 moles of the metal Yb contained in the first minor component. Therefore, in this case, there are 4 moles of Yb per 100 moles of BaTiO3.

[0036] The first minor component has the effect of shifting the Curie temperature to the higher temperature side and improving the stability of capacitance due to temperature changes. In other words, the first minor component plays a role in preventing a decrease in the reliability of the multilayer ceramic capacitor formed with the dielectric composition according to the embodiment of the present invention.

[0037] If the Yb element content in the first minor component is less than 0.2 moles per 100 moles of the main component of the base material, the improvement effect on the high-temperature TCC (temperature coefficient of capacitance) will not be significant. If the Yb element content in the first minor component exceeds 6 moles per 100 moles of the main component of the base material, the firing-related properties will deteriorate.

[0038] <Second subcomponent>

[0039] The dielectric composition according to the embodiment of the present invention contains, as a second minor component, one or more selected from the group consisting of oxides and carbonates of one or more elements from Dy, Y, Ho, Tb, Gd, Eu, and Er. The second minor component may be one or more selected from the group consisting of Dy2O3 and Y2O3, in which case the total content of Dy2O3 and Y2O3 is 0.2 to 6 molar parts. Alternatively, instead of Dy and Y, the second minor component may contain one or more selected from the group consisting of oxides and carbonates of one or more other rare earth elements from Ho, Tb, Gd, Eu, and Er.

[0040] The second minor component is present in an amount of 0.2 to 6 moles per 100 moles of the main component of the base material. The content of the second minor component is based on the content of one or more elements contained in the second minor component, without distinguishing between the additive form, such as oxides or carbonates. For example, the total content of elements contained in the second minor component is 0.2 to 6 moles per 100 moles of the main component of the base material. As an example, when the second minor component contains Dy2O3 and Y2O3, if we assume that there is 1 mole of Dy2O3 and 0.5 moles of Y2O3 per 100 moles of BaTiO3, then there are 2 moles of the metal Dy and 1 mole of Y contained in the second minor component. Therefore, in this case, the total content of elements contained in the second minor component is 3 moles per 100 moles of BaTiO3.

[0041] The second minor component helps improve high-temperature TCC and prevents a decrease in the reliability of multilayer ceramic capacitors formed with dielectric compositions. If the element content of the second minor component is less than 0.2 moles or more than 6 moles relative to 100 moles of the main component of the base material, this effect will be insufficient.

[0042] <Third subcomponent>

[0043] The dielectric composition according to the embodiment of the present invention contains one or more oxides selected from the group consisting of Ba and Zr as a third minor component. The third minor component is preferably BaZrO3 or a mixture of BaO and ZrO2, but is not limited thereto. In the case of BaZrO3, the ratio of Ba and Zr is not particularly limited, and the molar ratio of Ba to Zr (Ba / Zr) may be 0.5 to 1.5, and preferably 0.9 to 1.1.

[0044] When a third minor component is added, the overall dielectric constant decreases, and the change in dielectric constant with temperature becomes flatter. The third minor component is included in an amount of 4 to 6 moles or less per 100 moles of the main component of the base material. If the content of the third minor component is less than 4 moles per 100 moles of the main component of the base material, the improvement effect on high-temperature TCC will not be significant, and if the content of the third minor component exceeds 6 moles per 100 moles of the main component of the base material, the high-temperature withstand voltage characteristics will deteriorate.

[0045] <4th subcomponent>

[0046] The dielectric composition according to the embodiment of the present invention may contain, as a fourth minor component, one or more oxides and carbonates of fixed-valence acceptor elements including Mg.

[0047] The fourth minor component is present in an amount of 0.1 to 3 moles or less per 100 moles of the main component of the base material. The content of the fourth minor component is based on the amount of Mg element contained in the fourth minor component, without distinguishing between its additive form, such as oxide or carbonate. For example, the amount of Mg element contained in the fourth minor component is 0.1 to 3 moles or less per 100 moles of the main component of the base material.

[0048] If the content of the fourth minor component is less than 0.1 moles or more than 3 moles relative to 100 moles of the main component of the dielectric base material, the dielectric constant will be low, which is undesirable because it leads to a problem of low high-temperature withstand voltage characteristics.

[0049] <5th subcomponent>

[0050] The dielectric compositions according to the embodiments of the present invention may include, as a fifth minor component, one or more elements selected from the group consisting of oxides and carbonates of valence-variable acceptor elements, including one or more of V, Mn, Cr, Fe, Ni, Co, Cu, and Zn. The fifth minor component is preferably one or more elements selected from the group consisting of V2O5, MnO2, and Cr2O3, but is not limited thereto.

[0051] The fifth minor component is present in an amount of 0.03 to 4 moles or less per 100 moles of the main component of the base material. The content of the fifth minor component is based on the content of the elements contained in the fifth minor component, without distinguishing between its additive form, such as oxides or carbonates. For example, the total content of the elements contained in the fifth minor component is 0.03 to 4 moles per 100 moles of the main component of the base material.

[0052] The fifth minor component improves the high-temperature withstand voltage characteristics by improving the reduction resistance of the dielectric composition. If the content of the fifth minor component is less than 0.03 molar parts, the high-temperature withstand voltage characteristics will be low, and if it exceeds 4 molar parts, the reliability of the dielectric ceramic composition will decrease (for example, a decrease in dielectric constant).

[0053] <6th subcomponent>

[0054] The dielectric composition according to the embodiment of the present invention includes, as a sixth minor component, one or more selected from the group consisting of oxides of element Si, carbonates of element Si, and glasses containing element Si. Preferably, the sixth minor component is Ba x Ca 1-x This material may include composite oxides represented by SiO3 (where x is between 0.3 and 0.8). The x-value of the composite oxide is between 0.3 and 0.8. If the x-value is too small, the dielectric properties will deteriorate due to the reaction between SiO2 and the main component BaTiO3. Conversely, if the x-value is too large, the melting point will rise, and properties related to firing will deteriorate.

[0055] The sixth minor component is present in an amount of 0.1 to 5 moles or less per 100 moles of the main component of the base material. If the content of the sixth minor component is less than 0.1 moles, the rate of change in capacitance with temperature increases. Conversely, if the content of the sixth minor component exceeds 5 moles, it is undesirable because it leads to problems such as a decrease in sinterability and density, and the formation of secondary phases.

[0056] <Example of experiment>

[0057] The BaTiO3 mixed solid solution powder, which is the base material powder containing the main component, was manufactured by applying the solid-phase method as follows.

[0058] The starting materials were BaCO3 and TiO2. These starting material powders were mixed in a ball mill and calcined at a temperature of 900-1000°C to prepare the main component base material powder. After mixing the secondary component additive powder with the main component base material powder in the component ratios shown in Table 2, the raw material powder containing the main and secondary components was ball-milled for a predetermined time (e.g., 20 hours) using zirconia balls as the mixing / dispersion medium, mixing with ethanol / toluene, a dispersant and a binder.

[0059] The manufactured slurry was formed into a 10 μm thick molded sheet using a doctor blade type coater, and the Ni internal electrode was printed onto this molded sheet. The upper and lower covers were made by laminating 25 layers of cover sheets and then pressurizing and laminating 21 layers of printed active sheets to produce a crimped bar. The crimped bar was cut into 3225 size chips (length × width × thickness: 3.2 mm × 2.5 mm × 2.5 mm) using a cutting machine.

[0060] After the completed chips were sintered, they were fired in a reducing atmosphere (0.1% H2 / 99.9% N2, H2O / H2 / N2 atmosphere) at a temperature of 1210°C to 1320°C for more than one hour, and then re-oxidized at a temperature of 1000°C in a nitrogen (N2) atmosphere for more than two hours to perform heat treatment.

[0061] The external electrodes were completed by using copper paste on the fired chips through a termination process and electrode firing.

[0062] As described above, the capacitance (dielectric constant), sintering temperature and loss coefficient (DF), and change in capacitance with temperature (TCC) were measured and evaluated for the completed multilayer ceramic capacitor test specimens. In addition, room-temperature insulation resistance and high-temperature accelerated lifetime were also evaluated, but these are not described here.

[0063] The capacitance at room temperature was measured using an LCR-meter under conditions of 1 kHz and AC 0.2 V / μm. The dielectric constant of the multilayer ceramic capacitor (MLCC) chip was calculated from the capacitance, the dielectric thickness of the MLCC chip, the area of ​​the internal electrodes, and the number of layers.

[0064] The dissipation factor (DF) was measured at 1 kHz and 1 Vrms using a capacitance meter (Keysight, E4981A).

[0065] The change in capacitance due to temperature was measured in the temperature range of -55°C to 125°C. Within this temperature range, the change in capacitance was measured using an LCR-meter under conditions of 1 kHz and 1 Vrms. At this time, the percentage change in capacitance at each temperature relative to the capacitance at 25°C was measured. This specification describes the change in capacitance at 125°C. A change in capacitance at 125°C (Temperature Coefficient of Capacitance, TCC) of within ±15% was judged as good, and any other result was judged as poor.

[0066] [Table 2]

[0067] [Table 3]

[0068] Table 2 shows samples in which the content of the first minor component Yb was varied while the content of the second minor component Dy was fixed at 2 moles, the content of the third minor component at 5 moles, the content of the fourth minor component Mg at 2.5 moles, the total content of the fifth minor component (V, Mn, Cr) at 0.69 moles, and the content of the sixth minor component at 3.55 moles. Table 3 shows the characteristics of the samples corresponding to samples 1 to 8 in Table 2.

[0069] When the content of the first minor component Yb was 0 moles (Sample 1), the high-temperature TCC (125°C) deviated from ±15%, indicating vulnerability to temperature changes. Similarly, when the content of the first minor component Yb exceeded 6 moles (Sample 8), the high-temperature TCC (125°C) deviated from ±15%, demonstrating vulnerability to temperature changes. In contrast, in the range of the first minor component Yb content from over 0 moles (e.g., 0.2 moles or more) to 6 moles or less (Samples 2-7), the high-temperature TCC remained within ±15%, satisfying the X7R standard. Therefore, the appropriate content range for the first minor component is 0.2 to 6 moles or less per 100 moles of the main component of the base material.

[0070] On the other hand, as the content of the first minor component Yb increases, the rate of change in capacity decreases, but the sintering temperature tends to increase. That is, when the Yb content is 7 moles or more, a firing temperature of 1300°C or higher is required, and if the firing temperature is excessively high, problems such as damage to the Ni internal electrodes occur. To solve this, the dielectric composition according to the embodiment of the present invention is characterized by adding all of the first to third minor components to BaTiO3. As shown in the table above, when the dielectric composition contains all of the first to third minor components, the X7R criterion is satisfied even without increasing the content of the first minor component Yb to 7 moles or more. In this way, the content of Yb added to the dielectric composition can be reduced in order to satisfy the X7R criterion, which has the effect of suppressing the rise in sintering temperature.

[0071] Furthermore, it was found that when the total content of the first and second minor components was within the range of 2 to 4 mole parts (Samples 3 to 7), the loss factor (DF) was less than 0.01. Therefore, when the total content of the first and second minor components is within the range of 2 to 4 mole parts (Samples 3 to 7), the dielectric constant is high at 1400 or more while satisfying the X7R standard, and the loss factor (DF) is less than 0.01, making it a suitable composition for AC circuits.

[0072] [Table 4]

[0073] [Table 5]

[0074] Table 4 shows samples in which the content of the second minor component Dy was varied while the content of the first minor component Yb was fixed at 4 moles, the content of the third minor component at 5 moles, the content of the fourth minor component Mg at 2.5 moles, the total content of the fifth minor component (V, Mn, Cr) at 0.69 moles, and the content of the sixth minor component at 3.55 moles. Table 5 shows the characteristics of the samples corresponding to samples 9 to 16 in Table 4.

[0075] When the content of the second minor component Dy is 0 moles (Sample 9), the high-temperature TCC (125°C) falls outside ±15%, indicating vulnerability to temperature changes. Similarly, when the content of the second minor component Dy exceeds 6 moles (Sample 16), the high-temperature TCC (125°C) also falls outside ±15%, indicating vulnerability to temperature changes. In contrast, when the content of the second minor component Dy is in the range of 0 moles (e.g., 0.2 moles or more) to 6 moles or less (Samples 10-15), the high-temperature TCC falls within ±15%, satisfying the X7R standard. Therefore, the appropriate content range for the second minor component Dy is 0.2 to 6 moles or less in elemental ratio relative to 100 moles of the main component of the base material.

[0076] Furthermore, it was found that when the total content of the first and second minor components was within the range of 2 to 4 mole parts (Samples 10 to 13), the loss factor (DF) was less than 0.01. Therefore, when the total content of the first and second minor components is within the range of 2 to 4 mole parts (Samples 10 to 13), the dielectric constant is high at 1400 or more while satisfying the X7R standard, and the loss factor (DF) is less than 0.01, making it a suitable composition for AC circuits.

[0077] [Table 6]

[0078] [Table 7]

[0079] Table 6 shows samples in which the total content of the second minor component Dy and Y was varied, while the content of the first minor component Yb was fixed at 4 moles, the content of the third minor component at 5 moles, the content of the fourth minor component Mg at 2.5 moles, the total content of the fifth minor component (V, Mn, Cr) at 0.69 moles, and the content of the sixth minor component at 3.55 moles. Table 7 shows the characteristics of the samples corresponding to samples 17-22 in Table 6.

[0080] When the total content of the second minor components Dy and Y exceeded 6 moles (Sample 22), the high-temperature TCC (125°C) fell outside the ±15% range, indicating vulnerability to temperature changes. In contrast, when the total content of the second minor components Dy and Y was in the range of 0.2 moles to 6 moles (Samples 17-21), the high-temperature TCC (125°C) remained within ±15%, satisfying the X7R standard.

[0081] Furthermore, in the case of samples 17 and 21, although Y was included as a substitute element for Dy in the second minor component, it was found that the high-temperature TCC was within ±15%, satisfying the X7R standard. Thus, it can be seen that the second minor component satisfies the X7R standard even if it contains Y as a substitute element for Dy. However, it can be seen that the X7R standard is satisfied only when the total amount of elements contained in the second minor component is between 0.2 moles and 6 moles (samples 17 to 21), and when the total amount of elements exceeds 6 moles (sample 22), the high-temperature TCC (125°C) falls outside ±15%.

[0082] On the other hand, when the total content of the first and second minor components was within the range of 2 to 4 mole parts (Samples 17 to 19), it was found that the loss factor (DF) was less than 0.01. Therefore, when the total content of the first and second minor components is within 2 to 4 mole parts (Samples 17 to 19), the dielectric constant is high at 1400 or more while satisfying the X7R standard, and the loss factor (DF) is less than 0.01, making it a suitable composition for AC circuits.

[0083] [Table 8]

[0084] [Table 9]

[0085] Table 8 shows samples in which the content of the third minor component was varied, while the content of the first minor component Yb was fixed at 4 moles, the total content of the second minor component (Dy, Y) at 3 moles, the content of the fourth minor component Mg at 2.5 moles, the total content of the fifth minor component (V, Mn, Cr) at 0.69 moles, and the content of the sixth minor component at 3.55 moles. Table 9 shows the characteristics of the samples corresponding to samples 23-30 in Table 8.

[0086] When the content of the third minor component exceeded 6 moles (samples 25-30), the high-temperature TCC (125°C) fell outside ±15%, indicating vulnerability to temperature changes. In contrast, when the content of the third minor component was 6 moles or less (samples 23-24), the high-temperature TCC remained within ±15%, satisfying the X7R standard. Furthermore, when the content of the third minor component was less than 4 moles (sample 23), the loss factor (DF) exceeded 0.01, but when the content of the third minor component was 4 moles or more (sample 24), the loss factor (DF) was less than 0.01. Therefore, when the content of the third minor component is within 4-6 moles relative to 100 moles of the main component of the base material (sample 24), the dielectric constant is high at 1400 or more while satisfying the X7R standard, and the loss factor (DF) is less than 0.01, making it a suitable composition for AC circuits.

[0087] The present invention is not limited by the embodiments and drawings described above. Therefore, it will be obvious to those with ordinary skill in the art that various forms of substitution, modification, and alteration are possible without departing from the technical spirit of the present invention. [Explanation of Symbols]

[0088] 100 Dielectric 220 1st external electrode 240 2nd external electrode 300 electrode units 320 First Electrode Set 340 Second Electrode Set

Claims

1. In a dielectric composition containing the main and minor components of a barium titanate-based matrix, The aforementioned minor component is, A first minor component comprising one or more elements selected from the group consisting of oxides and carbonates of one or more elements from Yb, Sc, Lu, and Tm, A second minor component comprising one or more elements selected from the group consisting of oxides and carbonates of one or more elements from Dy, Y, Ho, Tb, Gd, Eu, and Er, A third minor component comprising one or more selected from the group consisting of oxides containing Ba and Zr, A fourth minor component containing one or more oxides and carbonates of a valence-fixed acceptor element including Mg, A fifth minor component comprising one or more oxides and carbonates selected from the group consisting of valence-variable acceptor elements including one or more of V, Mn, Cr, Fe, Ni, Co, Cu, and Zn, It includes at least one of the sixth minor components, which is selected from the group consisting of oxides, carbonates, and glasses of the element Si, The at least one subcomponent includes the first subcomponent, the second subcomponent, and the third subcomponent. The content of one or more elements in the first minor component is 0.2 to 6 moles per 100 moles of the main component of the base material. The content of one or more elements in the second minor component is 0.2 to 6 moles per 100 moles of the main component of the base material. A dielectric composition characterized in that the content of the third minor component is 4 to 6 moles per 100 moles of the main component of the base material.

2. The dielectric composition according to claim 1, characterized in that the first minor component contains the element Yb.

3. The dielectric composition according to claim 1, characterized in that the total content of the first and second minor components is 2 to 4 moles.

4. The aforementioned second subcomponent is Dy ２ O ３ and Y ２ O ３ Includes, The dielectric composition according to claim 1, characterized in that the total content of Dy and Y contained in the second minor component is 0.2 to 6 moles.

5. The at least one subcomponent further includes the fourth subcomponent, The dielectric composition according to claim 1, characterized in that the amount of Mg element contained in the fourth minor component is 0.1 to 3 moles per 100 moles of the main component of the base material.

6. The aforementioned at least one subcomponent further comprises the fifth subcomponent, The dielectric composition according to claim 1, characterized in that the content of the valence-variable acceptor element in the fifth minor component is 0.03 to 4 moles per 100 moles of the main component of the base material.

7. The at least one subcomponent further comprises the sixth subcomponent, The dielectric composition according to claim 1, characterized in that the content of the sixth minor component is 0.1 to 5 moles per 100 moles of the main component of the base material.

8. The sixth subcomponent is Ba ｘ Ca １－ｘ SiO ３ The dielectric composition according to claim 7, characterized by containing a composite oxide represented by (where x is 0.3 to 0.8).

9. In a method for manufacturing a dielectric composition, The steps include preparing the main components of the barium titanate base material, A step of preparing at least one subcomponent, including the first, second, and third subcomponents, from a first subcomponent comprising one or more elements selected from the group consisting of oxides and carbonates of one or more elements from Yb, Sc, Lu, and Tm; a second subcomponent comprising one or more elements selected from the group consisting of oxides and carbonates of one or more elements from Dy, Y, Ho, Tb, Gd, Eu, and Er; a third subcomponent comprising one or more elements selected from the group consisting of oxides including Ba and Zr; a fourth subcomponent comprising one or more elements selected from the group consisting of oxides and carbonates of a valence-fixed acceptor element including Mg; a fifth subcomponent comprising one or more elements selected from the group consisting of oxides and carbonates of a valence-variable acceptor element including one or more elements from V, Mn, Cr, Fe, Ni, Co, Cu, and Zn; and a sixth subcomponent comprising one or more elements selected from the group consisting of oxides, carbonates, and glass of the element Si. A step of producing a mixture containing the main component of the base material and the at least one minor component, The step of calcining the mixture is included, The content of one or more elements in the first minor component is 0.2 to 6 moles per 100 moles of the main component of the base material. The content of one or more elements in the second minor component is 0.2 to 6 moles per 100 moles of the main component of the base material. A method for producing a dielectric composition, characterized in that the content of the third minor component is 4 to 6 moles per 100 moles of the main component of the base material.

10. The method for producing a dielectric composition according to claim 9, characterized in that the sintering temperature of the mixture is 1210°C or higher.

Images