Smart panel using shape memory alloy poppet actuators

Abstract

Embodiments of this disclosure relate to a faceplate for mounting poppets to change the cross-section of a nozzle. In one embodiment, a faceplate is provided. The faceplate includes a body, a plurality of holes in the body, and a plurality of poppet assemblies. A poppet assembly includes a poppet configured to move within a first portion of a hole and create a variable passage within a second portion of a hole. The poppet assembly further includes a first spring connected to the poppet, which, when connected to power, is operable to move the poppet in a first direction, and a second spring connected to the poppet, which, when power is reduced or stopped, is operable to move the poppet in a second direction opposite to the first direction.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to methods and apparatuses for distributing gas within a processing chamber. Specifically, embodiments of the present disclosure relate to a faceplate that implements a poppet to vary the cross-section of a nozzle.

Background Art

[0002] Description of Related Art

[0002] In the manufacture of integrated circuits, deposition processes such as chemical vapor deposition (CVD) or atomic layer deposition (ALD) are used to deposit films of various materials on a semiconductor substrate. In other operations, layer alteration processes such as etching are utilized to expose portions of a layer for further processing. These processes are often repeatedly utilized to fabricate various layers of electronic devices such as semiconductor elements.

[0003]

[0003] Conventional processing chambers utilize a showerhead to vary the flow of gas to a substrate and achieve a desired layer profile thereon. However, current showerheads have a fixed nozzle diameter. In order to change the diameter of the nozzle, it is necessary to replace the faceplate. By having faceplates of multiple designs, often a downtime is incurred to exchange one faceplate with a faceplate of a different design to perform a new processing step. Such a design increases the cost of apparatus manufacture and decreases the throughput of the processing system.

[0004]

[0004] Therefore, an improved faceplate for processing a substrate is needed.

Summary of the Invention

[0005]

[0005] In one embodiment, a faceplate is provided. The faceplate includes a body, a plurality of holes in the body, and a plurality of poppet assemblies. Each hole included in the plurality of holes has at least a first portion having a first diameter and a second portion having a second diameter. A poppet assembly includes a poppet configured to move within the first portion of the hole and create a variable passage within the second portion of the hole. A poppet assembly further includes a first spring connected to the poppet, which is operable to move the poppet in a first direction when power is connected, and a second spring connected to the poppet, which is operable to move the poppet in a second direction opposite to the first direction when power is reduced or stopped.

[0006]

[0006] In another embodiment, a processing chamber is provided. The processing chamber includes an inlet port located within a lid and a faceplate located below the inlet port below the lid. The faceplate includes a body and a plurality of holes extending through the body of the faceplate. Gas from the inlet port flows through the holes. The faceplate further includes a plurality of poppet assemblies located within the holes, the poppet assemblies being operable to change the flow area of ​​the holes through the operation of the poppet assemblies, and a plurality of wires being operable to supply power to the poppet assemblies and fix the position of the poppet assemblies. The processing chamber further includes a power supply for supplying power to the wires and a controller operable to control the operation of the poppet assemblies.

[0007]

[0007] In another embodiment, a method is provided for adjusting the flow through a faceplate. This method includes supplying power to a plurality of poppet assemblies via a power source to move each poppet assembly from a first position to a second position. The plurality of poppet assemblies are arranged in a plurality of holes in the faceplate, and the power is applied to a first spring contained in each poppet assembly. This method further includes flowing gas through the plurality of holes in the faceplate and reducing or stopping the power supplied to the plurality of poppet assemblies to return the second spring contained in each poppet assembly to the first position.

[0008]

[0008] To enable a more detailed understanding of the features of the present disclosure described above, a more specific description of the present disclosure, which has been briefly summarized above, can be obtained by referring to the implementations, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings only show exemplary embodiments and should not be considered to limit the scope of the present disclosure, and other equally valid embodiments may also be permitted. [Brief explanation of the drawing]

[0009] [Figure 1] This is a cross-sectional view of a processing chamber according to one embodiment. [Figure 2] This is an isometric view of a poppet assembly according to one embodiment. [Figure 3] This is a top view of a panel according to one embodiment. [Figure 4] This is a flowchart illustrating a method for operating a faceplate using a poppet assembly according to one embodiment. [Figure 5A-5B] This is a cross-sectional view of the faceplate in the method shown in Figure 4, according to one embodiment. [Modes for carrying out the invention]

[0010] To facilitate understanding, the same reference numerals were used where possible to indicate identical elements common to multiple figures. It is assumed that elements and features of one embodiment may be usefully incorporated into other embodiments without further description.

[0011]

[0015] Embodiments of the present disclosure generally relate to methods and apparatus for distributing gas within a processing chamber. Specifically, embodiments of the present disclosure relate to a faceplate on which poppets are mounted to change the cross-section of a nozzle. Multiple poppet assemblies are connected to the faceplate and are operable to change the nozzle cross-section of holes in the faceplate in order to modify the gas flow profile through the faceplate. A method for processing a substrate using a gas distribution unit is also disclosed.

[0012]

[0016] Figure 1 shows a schematic configuration of an exemplary processing chamber 100 according to one embodiment. The processing chamber 100 has a body 102 having side walls 104 and a base 106. A lid assembly 108 is coupled to the body 102 to define the processing space 110 inside it. The body 102 is generally formed from a metal such as aluminum or stainless steel, but any material suitable for use in conjunction with the processing inside it may be used. A substrate support 112 is positioned within the processing space 110 to support the substrate W during processing in the processing chamber 100. The substrate support 112 includes a support body 114 coupled to a shaft 116. The shaft 116 is connected to the lower surface of the support body 114 and extends from the body 102 through an opening in the base 106. The shaft 116 and the support body 114 coupled to it are coupled to an actuator 120 to move vertically between a substrate loading position and a processing position. The vacuum system 130 is fluidly connected to the processing space 110 in order to allow gas to escape from the processing space 110.

[0013]

[0017] To facilitate the processing of the substrate W within the processing chamber 100, the substrate W is positioned on the upper surface of the support body 114 opposite the shaft 116. A port 122 is formed in the side wall 104 to facilitate the loading and unloading of the substrate W into and out of the processing space 110. A door 124, such as a slit valve, is operated to selectively allow the substrate W to pass through the port 122 and be loaded onto or removed from the substrate support 112. An electrode 126 is optionally positioned inside the support body 114 and electrically coupled to a power supply 128 via the shaft 116. The electrode 126 is selectively biased by the power supply 128 to generate an electromagnetic field that chucks the substrate W onto the upper surface of the support body 114 and / or facilitates plasma generation or control. In certain embodiments, a heater 190, such as a resistance heater, is positioned inside the support body 114 and heats the substrate W placed on it.

[0014]

[0018] The lid assembly 108 includes a lid 132 and a faceplate 136. The faceplate 136 is coupled to the lid 132 and, together with the lid 132, defines a gas space 148. The faceplate 136 is connected to the side wall 104. The faceplate 136 is coupled to the base 106 and, together with the base 106, defines a processing space 110. The faceplate 136 includes a circular disc having a disc diameter. The disc diameter is between 500 mm and 600 mm. The faceplate 136 includes a plurality of holes 154 arranged throughout the faceplate 136. The faceplate is further described in conjunction with Figure 3.

[0015]

[0019] The inlet port 144 is located inside the lid 132. The inlet port 144 is connected to a gas conduit 138. The gas conduit 138 allows gas to flow from a first gas source 140, such as a processing gas source, through the inlet port 144 into the gas space 148. A second gas source 142, such as a cleaning gas source, is optionally connected to the gas conduit 138. The first gas source 140 supplies a processing gas, such as an etching gas or a deposition gas, to the processing space 110 in order to etch or deposit a layer on the substrate W. The second gas source 142 supplies a cleaning gas to the processing space 110 in order to remove particle deposits from the inner surface of the processing chamber 100.

[0016]

[0020] The holes 154 are positioned to pass through the faceplate 136. The holes 154 allow for fluid connection between the processing space 110 and the gas space 148. During operation, gas is allowed to flow from the inlet port 144 into the gas space 148. The gas then flows into the processing space 110 through the holes 154 in the faceplate 136. One or more of the multiple holes 154 are partially covered by a poppet assembly 200. The poppet assembly 200 is partially positioned within the hole 154. Each poppet assembly 200 is supported by a housing 155. Thus, the housing 155 keeps the poppet assembly 200 stable while it is operating across the entire hole 154. The housing 155 is part of the faceplate 136. The housing 155 is designed not to obstruct the flow of gas through the faceplate 136. Furthermore, the multiple holes 154 have a total diameter between 10 mil and 120 mil. The poppet assembly 200 is connected to the power supply 150 and the controller 160. The power supply 150 is connected to the poppet assembly 200 via power wire 118. The poppet assembly 200 is further described in Figure 2.

[0017]

[0021] The power supply 150 may be any suitable type, such as a linear power supply, switching power supply, uninterruptible power supply, alternating current (AC) power supply, direct current (DC) power supply, programmable power supply, high voltage power supply, or radio frequency (RF) power supply, depending on the needs of the processing chamber 100 or poppet assembly 200.

[0018]

[0022] The power supply 150 includes at least a power input and a power output. The power supply 150 may include a transformer, a DC-DC converter, a rectifier, a voltage regulator, and / or a filter. The power input of the power supply 150 may be configured to accept either an alternating current (AC) input or a direct current (DC) input. The power output of the power supply 150 may be configured to provide either an AC or DC source. The power supply 150 may include a transformer for accepting the AC input, which may then be stepped up or down to match the required voltage level. The power supply 150 may include a DC-DC converter, such as a buck converter, a boost converter, or a step-up converter, for stepping up or stepping down the DC input to match the required voltage. The power supply 150 may include a rectifier of an appropriate topology for accepting the AC input and converting the AC input to a DC output. The power supply 150 may include a voltage regulator used to maintain a constant output voltage despite fluctuations in the input voltage or load. The voltage regulator may be of any appropriate topology, e.g., a liner regulator or a switching regulator. In some embodiments, the power supply 150 may include a filter configured to smooth or reduce undesirable fluctuations, harmonics, or noise in the output voltage or current. In some embodiments, the filter may include a capacitive filter, an inductive filter, or an inductive-capacitive filter of appropriate topology. In some embodiments, the filter may be an active filter, a passive filter, a digital filter, or a combination thereof. In some embodiments, the power supply 150 may include various protection mechanisms, such as overcurrent protection, overvoltage protection, power regulation, and / or short-circuit protection, to protect both the power supply, the processing chamber 100, the poppet assembly 200, and the controller 160.

[0019]

[0023] The controller 160 can control the processing within the processing chamber 100. The controller 160 can control the flow of gas from the gas sources 140 and 142. The controller can control the power supply 150 that supplies power to the processing chamber 100 and the poppet assembly 200. The controller 160 communicates with the processing chamber 100 and is used to control processes and methods, such as steps of the methods described herein.

[0020]

[0024] The controller 160 is configured to receive data and input commands to the components of the processing chamber 100. The controller 160 has or communicates with a system model of the processing chamber 100. The system model includes a heating model, a film uniformity model, a film deposition rate model, a coating model, a rotational position model, and / or a gas flow model. The system model is a program configured to estimate parameters within the processing chamber 100 (e.g., gas flow rate, gas pressure, processing temperature of substrate support 112 and / or substrate W, rotational position of components, heating profile, coating conditions, and / or etching conditions) throughout the deposition and / or etching processes. The controller 160 is further configured to store reads and calculations. Reads and calculations include previous sensor readings, such as any previous sensor readings within the processing chamber 100. Reads and calculations further include stored calculated values ​​from after the sensor readings have been measured by the controller 160 and executed through the system model. Therefore, the controller 160 is configured to retrieve both the stored read and calculated values, and to save the read and calculated values ​​for future use. By maintaining previous reads and calculations, the controller 160 can adjust the system model over time to reflect a more accurate version of the processing chamber 100.

[0021]

[0025] The controller 160 can monitor, estimate optimized parameters, calibrate one or more flow sensors, generate an alarm on a display, stop a deposition operation, initiate a chamber downtime period, delay subsequent iterations of the deposition operation, initiate an etching operation, stop the etching operation, adjust heating power, and / or adjust the processing recipe in other ways.

[0022]

[0026] The controller 160 includes a central processing unit (CPU) (e.g., a processor), a memory containing instructions, and support circuitry for the CPU. The controller 160 directly controls various items or controls them via other computers and / or controllers. In one or more embodiments, the controller 160 is communicatively coupled to a dedicated controller and the controller 160 functions as a central controller.

[0023]

[0027] The controller 160 is a general-purpose computer processor in any form used in an industrial environment to control various substrate processing chambers and devices, as well as sub-processors thereon or within. The memory, or non-transitory computer-readable medium, is one or more of readily available memories (e.g., random access memory (RAM), dynamic random access memory (DRAM), static RAM (SRAM), and synchronous dynamic RAM (SDRAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), read-only memory (ROM), floppy disk, hard disk, flash drive, or any other form of digital storage, local or remote. The support circuits of the controller 160 are connected to the CPU to support the CPU. The support circuits include a cache, power supply, clock circuit, input / output circuit, and subsystems, etc. The operating parameters (e.g., additional) and operations are stored in the memory as software routines that are executed or called to transform the controller 160 into a specific-purpose controller for controlling the operations of the various chambers / modules described herein. The controller 160 is configured to execute any of the methods described herein. The instructions stored in the memory, when executed, perform the methods 400 executed in connection with FIGS. 1, 2, 3, 5A - 5B, and / or the processing chamber 100. The controller 160 and the processing chamber 100 are at least part of a system for processing substrates.

[0024]

[0028] The various operations described herein (such as the operations of FIGS. 1, 2, 3, 5A - 5B, and / or method 400) can be automatically executed using the controller 160, or can be executed automatically or manually using specific operations performed by a user.

[0025]

[0029] In one or more embodiments, the controller 160 includes a mass storage device, an input control unit, and a display unit. The controller 160 monitors the processing gas flow and / or purge gas flow, the amount of power supplied by the power supply 150, and the position of the poppet assembly 200. In one or more embodiments, the controller 160 includes multiple controllers, thereby storing stored reads and calculations, as well as the system model, in a controller separate from the controller 160 that controls the operation of the processing chamber 100. In one or more embodiments, the system model and all stored reads and calculations are stored within the controller 160.

[0026]

[0030] Figure 2 is an isometric view of a single poppet assembly 200. The poppet assembly 200 includes a base 201, a stopper 203, a first spring 205, and a second spring 207. The base 201 is connected to the stopper 203. The base 201 and the stopper 203 are fused together to form a single part, i.e., a poppet 202. The base 201 and the stopper 203 may include polytetrafluoroethylene (PTFE) or a similar material. The base 201 is configured to move above the faceplate 136 and within the hole 154. The stopper 203 is configured to form a variable passage for gas to move through the hole 154. The stopper 203 moves together with the base 201 throughout the hole 154. The first spring 205 and the second spring 207 are connected to the base 201. The first spring 205 and the second spring 207 are configured to move the base 201 and the stopper 203.

[0027]

[0031] The first spring 205 is manufactured from a shape memory alloy. The shape memory alloy is formed on a first wire wound around the spring. In some embodiments, the shape memory alloy is nitinol (nickel titanium). In some embodiments, the shape memory includes iron manganese silicon, copper zinc aluminum, copper aluminum nickel, or any combination thereof. The shape memory alloy changes shape in the presence of power. The power increases the temperature of the first spring 205, causing the shape memory alloy to contract and move the poppet assembly 200 in a first direction away from the hole 154. The first spring 205 has a first coil diameter between 3 mm and 6 mm. The wire forming the first spring 205 has a first wire diameter between 0.1 mm and 0.3 mm. The first spring 205 is connected to the housing 155.

[0028]

[0032] The second spring 207 is a conventional spring. The second spring 207 is formed from a second wire, which may include stainless steel (SST) or a similar material. The second spring 207 has a second coil diameter smaller than the first coil diameter of the first spring 205. The second spring 207 is operable to assist in moving the poppet assembly 200 toward the hole 154 in a second direction, the second direction being opposite to the first direction. In some embodiments, the first spring 205 and the second spring 207 are enclosed within a housing (not shown) to protect the springs from gas. The second spring 207 is connected to the housing 155. In some embodiments, the housing 155 extends around the first spring 205 and the second spring 207, protecting the springs from gas flowing through the hole 154.

[0029]

[0033] Figure 3 is a top view of the faceplate 136. The poppet assembly 200 is positioned above the holes 154 in the faceplate 136. Actuating wires 301 are connected to each of the first springs 205 of the poppet assembly 200. All acting wires 301 are connected to power wires 118, which are connected to a power supply 150. The power supply 150 supplies power to the power wires 118, which pass through the acting wires 301. The power passes through the acting wires 301 and is applied to the first springs 205. The power that contacts the first springs 205 actsuates the first springs 205. The acting wires 301 are connected to the first springs 205 in metal fixtures located within the housing 155.

[0030]

[0034] Figure 3 shows a circular pattern of holes 154 arranged in concentric circles. In other embodiments, different patterns of holes 154 are conceivable. For example, other hole patterns could include a hexagonal pattern in which each hole is surrounded by six other holes at a fixed angle, a rectangular grid in which each hole is within a square grid, a triangular grid forming equilateral triangles, a staggered rectangle, a staggered triangle, a spiral pattern, a radial pattern, an asymmetrical pattern, a honeycomb pattern, or a spirograph.

[0031]

[0035] Figure 4 is a flowchart of method 400 for operating the faceplate 136 using the poppet assembly 200. Figures 5A and 5B are cross-sectional views of the faceplate 136 in method 400 of Figure 4.

[0032]

[0036] In step 401, a signal is sent to the power supply 150 to supply power. The controller 160 signals the power supply 150 to supply power to the poppet assembly 200. The controller 160 indicates the amount of power that determines the distance actuated by the first spring 205. The distance actuated by the first spring 205 determines the distance between each poppet assembly 200 and the corresponding hole 154, and consequently determines the size of the cross-section of the gas channel 506. The gas channel 506 is a passage that allows gas to flow through each hole 154. The gas channel 506 is defined between the stopper 203 of the poppet assembly 200 and the first section 511 of the hole 154.

[0033]

[0037] The poppet assembly 200 begins in a first position 501, as shown in Figure 5A. The first spring 205 and the second spring 207 are in the starting position. The hole 154 has a first section 511 and a second section 515. The first section 511 has a first diameter 513. In some embodiments, the first diameter 513 is equal to the total diameter of the hole 154, between 10 mils and 120 mils. The second section 515 has a second diameter 517. The second diameter 517 is between 250 mils and 300 mils. The first section 511 is molded to reflect the shape of the stopper 203. The first section 511 has a stepped surface 519 that begins at the second diameter 517 and moves to the first diameter 513. In some embodiments, the stepped surface 519 contacts the stopper 203 at a first position 501, and the gas channel 506 is closed, preventing gas from passing through. In some embodiments shown in Figure 5A, the stepped surface 519 does not contact the stopper 203, and the first cross section 503 of the gas channel 506 is a narrow opening that allows gas to pass through a first flow area. The first cross section 503 is directly related to the first position 501.

[0034]

[0038] In step 403, power is supplied to the poppet assembly 200. Power is supplied by the power supply 150 to the actuating wire 301 via the power wire 118. The first spring 205 contacts the actuating wire 301 and sends power to the first spring 205. The power then heats the first spring 205, causing the shape memory alloy to contract. As the first spring 205 contracts, the poppet assembly 200 acts at a certain distance from the hole 154. The poppet assembly 200 moves a distance corresponding to the power supplied by the power supply 150. In some embodiments, multiple power wires 118 are connected to multiple actuating wires 301, making it possible to supply different amounts of power to different poppet assemblies 200. Thus, different poppet assemblies 200 can be actuated at different distances from the hole 154.

[0035]

[0039] The poppet assembly 200 moves to a second position 505, as shown in Figure 5B. The first spring 205 and the second spring 207 are in the operating position. The contraction of the first spring 205 and the second spring 207 causes the base 201 and stopper 203 of the poppet assembly 200 to rise. The stopper 203 moves to a distance away from the stepped surface 519, forming a second cross section 507 of the gas channel 506. The second cross section 507 is a larger opening than the opening of the first cross section 503 of the gas channel 506, allowing more gas to pass through. The gas channel 506 has a smaller first cross section 503, which is created by the poppet assembly 200 being in the first position. The second cross section 507 through which the gas passes is directly related to the power supplied by the power supply 150. In some embodiments, the first cross section 503 is a smaller cross section than the second cross section 507. In some embodiments, the power is varied by the poppet assembly 200, causing several first springs 205 to receive different powers. The different powers cause the cross-section of the gas channel 506 to change through the hole 154.

[0036]

[0040] In step 405, gas flows through the faceplate 136. The gas enters the gas space 148 via the inlet port 144. The gas is supplied to the inlet port 144 from a first gas source 140 and a second gas source 142 via the gas conduit 138. In some embodiments, a first gas is supplied from the first gas source 140 and a second gas is supplied from the second gas source 142. The gas in the gas space 148 flows through the faceplate 136 to the processing space 110. The gas in the gas space 148 passes through the second cross section 507 of the gas channel 506 formed by the poppet assembly 200 in the hole 154. The gas flows toward the substrate support 112. The gas in the gas space 148 can then be used to deposit, process, or etch the substrate W placed on the substrate support 112.

[0037]

[0041] In some embodiments, multiple gases are used in step 405. In some embodiments, after step 405, step 403 is repeated with different powers to move the poppet assembly 200 to a third position. The third position forms a different cross-section of the gas channel 506, and step 405 is repeated with gas flowing through the different cross-section. This process can be repeated multiple times. In some embodiments, gas is flowed through the faceplate 136 before step 401, when the poppet assembly 200 is in a first position 501. The gas then flows through a first cross-section 503 of the gas channel 506.

[0038]

[0042] In step 407, the power supply 150 reduces or stops the power supplied to the first spring 205. As a result, the shape memory alloy in the first spring 205 expands or returns the first spring 205 to its starting position. In various embodiments, a second spring 207 provides a spring force to assist in returning the first spring 205 to its starting position. Once step 407 is complete, the poppet assembly is in the first position 501 shown in Figure 5A.

[0039]

[0043] In summary, embodiments of the present disclosure generally relate to methods and apparatus for distributing gas within a processing chamber. Specifically, embodiments of the present disclosure relate to a faceplate on which poppets are mounted to change the cross-section of the nozzles. The poppet assembly is connected to the faceplate and is operable to change the nozzle cross-section of the holes in the faceplate in order to modify the gas flow profile through the faceplate. Methods for processing substrates using a gas distribution unit are also disclosed. Advantages of the present disclosure include the ability to control the gas flow path area through the faceplate. By controlling the gas flow path area through the faceplate, it becomes possible to use a single faceplate for a variety of different processes. Using one faceplate for multiple processes reduces the costs that would otherwise be incurred by mounting multiple faceplates. Furthermore, the time required to change faceplates is eliminated. The flow path area can be varied across the faceplate to ensure uniform deposition across the entire substrate. Embodiments of the present disclosure are retrofittable to existing processing chambers, reducing costs.

[0040]

[0044] The above description applies to embodiments of the present disclosure, but other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims

1. A panel, The main unit and The plurality of holes in the main body, each of which has at least a first portion having a first diameter and a second portion having a second diameter, Multiple poppet assemblies, The plurality of poppet assemblies are provided, A poppet configured to move within the second portion of the hole and create a variable passage within the first portion of the hole, A first spring connected to the poppet, which is operable to move the poppet in a first direction when connected to power, and The device comprises a second spring connected to the poppet, which is operable to move the poppet in a second direction opposite to the first direction when the power is reduced or stopped. Face plate.

2. The faceplate according to claim 1, wherein the first spring includes a shape memory alloy.

3. The panel according to claim 2, wherein the shape memory alloy includes nickel-titanium, iron-manganese-silicon, copper-zinc-aluminum, copper-aluminum-nickel, or any combination thereof.

4. The faceplate according to claim 1, wherein the first spring has a coil diameter between 3 mm and 6 mm and a wire diameter between 0.1 mm and 0.3 mm.

5. The faceplate according to claim 1, wherein the first diameter of the first portion of the hole is between 10 mils and 120 mils, and the second diameter of the second portion of the hole is between 250 mils and 300 mils.

6. The panel according to claim 1, wherein the main body has a disc diameter between 500 mm and 600 mm.

7. The faceplate according to claim 1, wherein, with respect to a first poppet assembly included in the plurality of poppet assemblies, when the first spring is connected to the power, the gas channel defined between the poppet and the second portion of the hole has a larger cross-section than when the power is reduced or stopped.

8. The faceplate according to claim 7, wherein the first direction is a direction away from the second portion of the hole, and the second direction is a direction towards the second portion of the hole.

9. A processing chamber, An inlet port located inside the lid, A panel positioned below the inlet port beneath the lid, Main unit, A plurality of holes extending through the main body of the panel, through which gas from the inlet port flows, A plurality of poppet assemblies disposed within the hole, wherein the poppet assemblies are operable to change the flow area of ​​the hole by operating the poppet assemblies, and A panel comprising a plurality of wires that are operable to supply power to the poppet assembly and fix the position of the poppet assembly, A power supply for supplying the aforementioned power to the aforementioned wire, A controller that can operate to control the operation of the poppet assembly, A processing chamber equipped with the following:

10. Each poppet assembly included in the plurality of poppet assemblies, A poppet configured to move within the aforementioned hole and create a variable passage within the aforementioned hole, A first spring connected to the main body, configured to move the main body when connected to power, A second spring connected to the main body, configured to move the main body in the opposite direction to the first spring when the power is released, The processing chamber according to claim 9, further comprising the following:

11. The faceplate according to claim 10, wherein the first spring includes a shape memory alloy.

12. The faceplate according to claim 10, wherein the first spring has a coil diameter between 3 mm and 6 mm and a wire diameter between 0.1 mm and 0.3 mm.

13. The faceplate according to claim 10, wherein the first diameter of the first portion of the hole is between 10 mils and 120 mils, and the second diameter of the second portion of the hole is between 250 mils and 300 mils.

14. The panel according to claim 9, wherein the main body of the panel has a disc diameter between 500 mm and 600 mm.

15. A method for adjusting the flow through a faceplate, Power is supplied to a plurality of poppet assemblies via a power source in order to move each poppet assembly from a first position to a second position, wherein the plurality of poppet assemblies are arranged in a plurality of holes in a faceplate, and the power is applied to a first spring contained in each poppet assembly. To pass gas through the plurality of holes in the aforementioned faceplate, To cause a second spring included in each poppet assembly to return each poppet assembly to the first position, the power supplied to the plurality of poppet assemblies is reduced or stopped. Methods that include...

16. The method according to claim 15, wherein, with respect to a first poppet assembly included in the plurality of poppet assemblies, when the first spring is connected to the power, the gas channel defined between the poppet and the hole has a larger cross-section than when the power is reduced or when the power is stopped.

17. The method according to claim 16, wherein the gas flowing through the plurality of holes in the faceplate flows through the gas channel toward the substrate support.

18. The method according to claim 16, further comprising the gas being flowed through the gas channel toward the substrate support before the power is supplied, wherein the gas channel has a smaller cross-section resulting from the poppet assembly being in a first position.

19. Supplying different power to each of the first springs of the poppet assembly such that the poppet assembly acts to a third position via the first springs and supplies power to each of the first springs such that it forms different cross-sections in the gas channel. The method according to claim 16, further comprising flowing the gas through the plurality of holes in the faceplate.

20. The method according to claim 15, wherein supplying the power to the plurality of poppet assemblies includes supplying different amounts of power to separate poppet assemblies included in the plurality of poppet assemblies so that the second position is changed by the separate poppet assemblies.

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