Smart panel / shower head using shape memory alloy

Abstract

An exemplary panel of a substrate processing system may include a plate characterized by a first surface and a second surface opposite to the first surface. The second surface may define a plurality of recesses extending through a portion of the plate's thickness. The plate may define a plurality of openings extending through its thickness. Each opening may extend through the bottom surface of one of the plurality of recesses. Each recess may have a larger diameter than the opening extending through the bottom surface of the recess. The panel may include a plurality of shape memory actuators. Each shape memory actuator may be placed in a corresponding recess among the plurality of recesses. Each shape memory actuator may define an actuator opening. The diameter of the actuator opening of each shape memory actuator may be variable.

Description

Technical Field

[0001] Cross - Reference to Related Applications

[0001] This application claims the benefit and priority of U.S. Patent Application No. 18 / 482,658, filed on October 6, 2023, entitled "SMART FACEPLATE / SHOWERHEAD USING SHAPE MEMORY ALLOY", which is hereby incorporated by reference in its entirety.

[0002]

[0002] This technology relates to components and devices for semiconductor manufacturing. More particularly, this technology relates to distribution components of a processing chamber and other semiconductor processing apparatuses.

Background Art

[0003]

[0003] Integrated circuits are enabled by a process of creating complex patterned layers of material on a substrate surface. Creating patterned material on a substrate requires a controlled method for forming and removing the material. Chamber components often deliver process gases to the substrate to deposit a film or remove material. To promote symmetry and uniformity, many chamber components may include features of a regular pattern for providing material in a way that can enhance uniformity. However, this can limit the ability to adjust recipes for on - wafer tuning.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used in the manufacture of high - quality devices and structures. This technology addresses these needs and others.

Summary of the Invention

[0005]

[0005] An exemplary panel of a substrate processing system may include a plate characterized by a first surface and a second surface opposite to the first surface. The second surface may define a plurality of recesses extending through a portion of the plate's thickness. The plate may define a plurality of openings extending through the plate's thickness. Each opening may extend through the bottom surface of one of the plurality of recesses. Each recess may have a larger diameter than the opening extending through the bottom surface of the recess. The panel may include a plurality of shape memory actuators. Each shape memory actuator may be placed in a corresponding recess among the plurality of recesses. Each shape memory actuator may define an actuator opening. The diameter of the actuator opening of each shape memory actuator may be variable.

[0006]

[0006] In some embodiments, the faceplate may include a plurality of electrical lines connected to the plate. Each electrical line may be electrically connected to at least one of the shape memory actuators. The diameter of the actuator opening of each shape memory actuator may be variable when current is applied. The plurality of electrical lines may be arranged to provide a plurality of independently controllable zones. The plurality of independently controllable zones may include annular zones. The plurality of independently controllable zones may include radial zones. The faceplate may include a plurality of resistance heating lines connected to the plate. Each resistance heating line may be electrically connected to at least one of the shape memory actuators. The diameter of the actuator opening of each shape memory actuator may be variable when heat is applied. Each shape memory actuator may contain nitinol. Each shape memory actuator may generally be conical in shape. Each shape memory actuator may contain a shape memory inner material and a chamber-fitting outer material. The chamber-fitting outer material may contain polytetrafluoroethylene. The shape memory inner material may have a conical spring shape.

[0007]

[0007] Some embodiments of the present technology may include a substrate processing chamber. The chamber may include a chamber body. The chamber may include a substrate support disposed within the chamber body. The substrate support may define a substrate support surface. The chamber may include a faceplate supported on the chamber body. The faceplate may include a plate characterized by a first surface and a second surface opposite to the first surface. The second surface may define a plurality of recesses extending through a portion of the plate's thickness. The plate may define a plurality of openings extending through the plate's thickness. Each opening may extend through the bottom surface of one of the plurality of recesses. Each recess may have a larger diameter than the opening extending through the bottom surface of the recess. The faceplate may include a plurality of shape memory actuators. Each shape memory actuator may be placed in a corresponding recess among the plurality of recesses. Each shape memory actuator may define an actuator opening. The diameter of the actuator opening of each shape memory actuator may be variable.

[0008]

[0008] In some embodiments, the second surface may face a substrate support. The chamber may include at least one power supply. The faceplate may include a plurality of electrical lines connected to the plate. Each electrical line may be electrically connected to at least one power supply. Each electrical line may be electrically connected to at least one of the shape memory actuators. The diameter of the actuator opening of each shape memory actuator may be variable when current is applied. The chamber may include at least one power supply. The faceplate may include a plurality of resistance heating lines connected to the plate. Each resistance heating line may be electrically connected to at least one power supply. Each resistance heating line may be electrically connected to at least one of the shape memory actuators. The diameter of the actuator opening of each shape memory actuator may change when heat is applied.

[0009]

[0009] Some embodiments of the present technology encompass a method for processing a substrate. The method may include supplying current to a faceplate. The faceplate may include a plurality of shape memory actuators. Each shape memory actuator may define an actuator opening. The current may set the diameter of each actuator opening. The method may include flowing a precursor into a processing chamber through the actuator openings of the plurality of shape memory actuators. The method may include generating a plasma of the precursor within the processing area of ​​the processing chamber. The method may include depositing a material on a substrate placed within the processing area.

[0010]

[0010] In some embodiments, the method may include determining a desired flow conductance profile through the faceplate. The method may include adjusting the current supplied to at least some of the shape memory actuators in order to adjust the diameter of the actuator openings of at least some of the shape memory actuators. At least some of the shape memory actuators may have actuator openings of different diameters. Supplying current to the faceplate may include supplying current to at least some of the shape memory actuators via one or more electrical lines. Supplying current to the faceplate may include supplying current to one or more resistance heating elements of the faceplate. One or more resistance heating elements may be coupled to at least some of the shape memory actuators.

[0011]

[0011] Such technologies may offer advantages over conventional systems and techniques. For example, embodiments of the technology may enable controlled deposition at various locations on the substrate. Furthermore, the components may allow for customization of the flow conductance profile through the faceplate to help mitigate the problem of deposition heterogeneity based on various issues related to a given chamber and / or chemicals. In some embodiments, it may be possible to control the deposition rate by adjusting only the size of the openings in the faceplate. These and other embodiments, along with many of their advantages and features, will be described in more detail in conjunction with the following description and accompanying figures.

[0012]

[0012] The nature and advantages of the disclosed technology can be further understood by referring to the remainder of this specification and the drawings. [Brief explanation of the drawing]

[0013] [Figure 1] The following are top views of exemplary processing systems according to several embodiments of this technology. [Figure 2] This is a schematic cross-sectional view of an exemplary processing chamber according to several embodiments of the present technology. [Figure 3] The following are schematic cross-sectional views of the faceplate according to several embodiments of this technology. [Figure 3A] Figure 3 shows a schematic diagram of the top surface of the panel. [Figure 3B] Figure 3 shows a schematic diagram of the top surface of the panel. [Figure 3C] Figure 3 shows a schematic diagram of the top surface of the panel. [Figure 4] The steps of an exemplary method for semiconductor processing according to several embodiments of this technology are shown. [Modes for carrying out the invention]

[0014]

[0020] Some drawings are included as schematic diagrams. These diagrams are for illustrative purposes only and should not be considered to scale unless specifically stated otherwise. Furthermore, the drawings are provided as schematic diagrams to aid understanding and may not include all aspects or information compared to realistic depictions, and may include exaggerated material for illustrative purposes.

[0015]

[0021] In the attached drawings, similar components and / or features may have the same reference numeral. Furthermore, various components of the same kind may be distinguished according to their reference numerals by letters that distinguish between similar components. Where only a first reference numeral is used herein, its description may apply to any similar component having the same first reference numeral, regardless of the letters mentioned above.

[0016]

[0022] Plasma deposition processes can excite one or more constituent precursors to facilitate film formation on a substrate. Any number of material films can be fabricated to grow semiconductor structures, including conductive and dielectric films, along with films to facilitate material transfer and removal. For example, a hard mask film can be formed to facilitate substrate patterning while protecting the underlying material, which is otherwise maintained. In many processing chambers, several precursors can be mixed in a gas panel and supplied to the processing area of ​​the chamber where the substrate can be placed. The components of the lid stack can affect the flow rate distribution within the processing chamber, and many other process variables can similarly affect the uniformity of deposition.

[0017]

[0023] As the size of device features decreases, tolerances across the entire substrate surface may decrease, and differences in the material properties of the film as a whole may affect the realization and uniformity of the device. Many chambers contain characteristic process signatures that can generate residual non-uniformity across the substrate. Temperature differences, uniformity of flow patterns, and other aspects of the process can affect the film on the substrate, potentially causing differences in the uniformity of the film across the substrate with respect to the material being generated or removed. For example, turbulence in the flow of the deposition gas and / or misalignment of the openings in the shielding plate and the faceplate of the gas box can lead to non-uniformity in the flow of the deposition gas. Similarly, the shape and dimensions of the substrate support and / or heater and / or other factors can result in thermal non-uniformity that can affect the deposition rate across the entire substrate. Therefore, to improve the uniformity of the film thickness across the entire substrate, it may be necessary to better control the processing process, such as deposition in one or more regions, to address these non-uniformity issues.

[0018]

[0024] This technology overcomes these challenges by incorporating a faceplate that includes several shape memory actuators to control the size of the openings formed through the faceplate. Controlling the opening size can adjust the conductance of the flow through the faceplate to combat various non-uniformities that affect the film thickness profile. The opening size may be adjusted before the start of the deposition process and / or in situ. The actuators can be controlled in any pattern to combat radial, residue, and / or other non-uniformity profiles on the wafer. By using a faceplate with adjustable opening size, a single faceplate can be used with numerous processing chamber components and / or chemicals, avoiding the need to manufacture and replace faceplates for specific processing steps, thereby reducing waste and conserving manufacturing resources.

[0019]

[0025] In the remaining disclosure, specific deposition and / or etching processes that utilize the disclosed technology are identified as usual, but it will be readily understood that the systems and methods are equally applicable to other depositions, etching chambers, and cleaning chambers, as well as processes that can occur in the described chambers. Correspondingly, the technology should not be regarded as limited to use in the specific deposition process or deposition chamber described above. In this disclosure, after discussing one possible system and chamber that may include lid stack components according to embodiments of the technology, further variations and adaptations of this system according to embodiments of the technology will be described.

[0020]

[0026] FIG. 1 shows a schematic cross-sectional view of an exemplary plasma-enhanced processing system 100 according to some embodiments of the technology. The plasma-enhanced processing system 100 can be adapted to one or more of the tandem sections and can show a pair of processing chambers that may include a substrate support assembly according to embodiments of the technology. The plasma-enhanced processing system 100 generally includes a chamber body 102 having sidewalls 112, a bottom wall 116, and an internal sidewall 101 that define a pair of processing regions 120A and 120B. Each of the processing regions 120A-120B may be similarly configured and may include the same components.

[0021]

[0027] For example, the processing region 120B (the components of which may also be included in the processing region 120A) may include a pedestal 128 disposed within the processing region through a passage 122 formed in the bottom wall 116 within the plasma-enhanced processing system 100. The pedestal 128 can provide a heater configured to support a substrate 129 on the exposed surface of the pedestal, such as a body portion. The pedestal 128 may include a heating element 132, such as a resistive heating element, which can heat and control the substrate temperature at a desired processing temperature. The pedestal 128 can also be heated by a remote heating element, such as a lamp assembly, or any other heating element.

[0022]

[0028] The body of the pedestal 128 may be connected to the stem 126 by a flange 133. The stem 126 can electrically connect the pedestal 128 to an outlet or power box 103. The power box 103 may include a driver system that controls the raising and moving of the pedestal 128 within the processing area 120B. The stem 126 may also include a power interface for supplying power to the pedestal 128. The power box 103 may also include interfaces for power meters and thermometers, such as a thermocouple interface. The stem 126 may include a base assembly 138 adapted to be detachably connected to the power box 103. A circumferential ring 135 is shown above the power box 103. In some embodiments, the circumferential ring 135 may be a shoulder adapted as a mechanical stopper or land configured to provide a mechanical interface between the base assembly 138 and the top surface of the power box 103.

[0023]

[0029] The rod 130 may be included through a passage 124 formed in the bottom wall 116 of the processing area 120B and may be used to position substrate lift pins 161 positioned through the body of the pedestal 128. The substrate lift pins 161 selectively space the substrate 129 away from the pedestal, facilitating the exchange of the substrate 129 with a robot used to transfer the substrate 129 into and out of the processing area 120B via the substrate transfer port 160.

[0024]

[0030] The chamber lid 104 may be connected to the top of the chamber body 102. The lid 104 may house one or more precursor distribution systems 108 connected to the lid 104. The precursor distribution system 108 may include a precursor inlet passage 140 that can supply reactants and washing precursors into the processing area 120B through the showerhead 118. The showerhead may include a single channel or multiple channels (e.g., two, three, etc.). The showerhead 118 may include an annular base plate 148 having a blocker plate 144 positioned between it and the faceplate 146. A radio frequency ("RF") source 165 may be connected to the showerhead 118 to supply power to the showerhead 118, facilitating the generation of a plasma region between the faceplate 146 of the showerhead 118 and the pedestal 128. In some embodiments, the RF source 165 may be connected directly or indirectly to the shower head 118 via a strap or other connection extending between the gas box and the shower head 118. In some embodiments, the RF source may be connected to other parts of the chamber body 102, such as a pedestal 128, to facilitate plasma generation. A dielectric isolator 158 may be placed between the lid 104 and the dual-channel shower head 118 to prevent the conduction of RF power to the lid 104. A shadow ring 106 may be placed on the outer edge of the pedestal 128 to engage with it.

[0025]

[0031] To cool the annular base plate 148 during operation, optional cooling channels 147 may be formed in the annular base plate 148 of the gas distribution system 108. A heat transfer fluid, such as water, ethylene glycol, gas, or similar, may be circulated through the cooling channels 147 so that the base plate 148 can be maintained at a predetermined temperature. The liner assembly 127 may be positioned within the processing area 120B, close to the side walls 101, 112 of the chamber body 102, to prevent the side walls 101, 112 from being exposed to the processing environment within the processing area 120B. The liner assembly 127 may include a circumferential pumping cavity 125 that can be connected to a pumping system 164 configured to exhaust gas and by-products from the processing area 120B and to control the pressure within the processing area 120B. Multiple exhaust ports 131 may be formed in the liner assembly 127. The exhaust port 131 may be configured to allow gas flow from the processing area 120B to the circumferential pumping cavity 125 in order to facilitate processing within the system 100.

[0026]

[0032] Figure 2 shows a schematic cross-sectional view of a processing chamber 200 according to several embodiments of the present technology. Figure 2 may include one or more components described above with respect to Figure 1 and may show further details of the chamber. The chamber 200 may be used to perform a semiconductor processing step, including the deposition of a stack of dielectric material as described above. The chamber 200 may show a partial view of the processing area of ​​a semiconductor processing system and may not include all components, such as the additional lid stack components described above, which are understood to be incorporated into several embodiments of the chamber 200. The chamber 200 may generally include a chamber body 205 having side walls, a bottom wall, and an internal side wall that define a processing area 210. The processing area 210 may include a substrate support 215 disposed within the processing area 210. The substrate support 215 may provide a heater adapted to support a substrate 220 on an exposed surface of the substrate support, such as a body portion. For example, the substrate support 215 may include a pocket 217 that defines the outer boundary of the substrate support surface 219. The pocket 217 may protrude upward from the substrate support 215, and the upper surface of the pocket 217 may be substantially aligned with the upper surface of the substrate 220. For example, the upper surface of the pocket 217 may be within approximately 3% of the height of the upper surface of the substrate 220, within approximately 2% of the height of the upper surface of the substrate 220, within approximately 1% of the height of the upper surface of the substrate 220, within approximately 0.5% of the height of the upper surface of the substrate 220, or less. For example, in the case of a substrate 220 with a thickness of 1 mm, the height of the upper surface of the pocket 217 may be between approximately 0.970 mm and 1.030 mm, between approximately 0.980 mm and 1.020 mm, between approximately 0.990 mm and 1.010 mm, between approximately 0.995 mm and 1.005 mm, or about 1 mm. The substrate support 215 may include a heating element 225, such as a resistance heating element, which can heat and control the substrate temperature at a desired processing temperature. The substrate support 215 may also be heated by a remote heating element such as a lamp assembly, or any other heating device.

[0027]

[0033] The main body of the substrate support 215 may be a stem 230. The stem 230 may electrically connect the substrate support 215 to a power output unit or power box 235. The power box 235 may include a drive system that controls the raising and moving of the substrate support 215 within the processing area 210. The stem 230 may also include a power interface for supplying power to the substrate support 215. The power box 235 may also include interfaces for power meters and thermometers, such as thermocouple interfaces. The precursor distribution assembly 240 may be coupled to the top of the chamber body 205, and optionally one or more intervening components may be positioned between them. The precursor distribution assembly 240 may supply reactants and washing precursors into the processing area 210. The precursor distribution assembly 240 may include a gas box 245, a blocker plate 250, and / or a faceplate 255. In some embodiments, the faceplate 255 may be heated to a temperature between about 70°C and 350°C. The gas box 245 can define or provide access to the processing chamber. A blocker plate 250 may be positioned between the gas box 245 and the substrate support 215. The blocker plate 250 may include or define several openings that penetrate the plate. In some embodiments, the blocker plate may be characterized by an increase in central conductance. For example, in some embodiments, a subset of openings extending near or around the central region of the blocker plate may be characterized by a larger opening diameter than the openings radially outward from the central region. This can increase the central flow conductance in some embodiments. A radio frequency ("RF") source (not shown) may be connected to the gas distribution assembly 240 to supply power to the gas distribution assembly 240 to facilitate the generation of a plasma region between the faceplate 255 and the substrate support 215. In some embodiments, the RF source may be connected to other parts of the chamber body 205, such as the substrate support 215, to facilitate plasma generation. For example, the RF mesh or electrode 270 may be embedded within the body of a substrate support 215, to which RF power may be supplied to facilitate plasma generation within the processing region 210.

[0028]

[0034] A faceplate 255 (similar to and / or can be used as faceplate 146 and / or showerhead 118) may be positioned within the chamber 200 between the blocker plate 250 and the substrate support 215, as previously described. The faceplate 255 may feature a first surface 257 and a second surface 259 which may be opposite the first surface 257. In some embodiments, the first surface 257 may face the blocker plate 250 and / or gas box 245. The second surface 259 may be positioned to face the substrate support 215 within the processing area 210 of the chamber 200. For example, in some embodiments, the second surface 259 of the faceplate 255 and the substrate support 215 may at least partially define the processing area 210. The faceplate 255 can define a number of openings 260 that penetrate the faceplate 255 and extend from a first surface 257 through a second surface 259. Each opening 260 can provide a fluid path through the faceplate 255 and can provide fluid access to the processing area of ​​the chamber. In some embodiments, the openings 260 may have a generally cylindrical cross-section. As shown, each opening 260 may have an opening profile including a larger upper cylindrical portion 262 and a smaller lower cylindrical portion 264, although other opening profiles are possible in various embodiments. The upper cylindrical portion 262 may have a larger diameter than the lower cylindrical portion 264. For example, the upper cylindrical portion 262 may have a diameter about 1.5 to 3 times larger than the diameter of the lower cylindrical portion 264. In some embodiments, the upper cylindrical portion 262 may have a diameter between approximately 0.025 inches and 0.1 inches, between approximately 0.030 inches and 0.095 inches, between approximately 0.035 inches and 0.090 inches, between approximately 0.040 inches and 0.085 inches, between approximately 0.045 inches and 0.080 inches, between approximately 0.050 inches and 0.075 inches, between 0.060 inches and 0.070 inches, or between approximately 0.060 inches and 0.065 inches.The lower cylindrical portion 264 may have a diameter between approximately 0.0075 inches and 0.050 inches, between approximately 0.010 inches and 0.045 inches, between approximately 0.015 inches and 0.040 inches, between approximately 0.020 inches and 0.035 inches, or between approximately 0.025 inches and 0.030 inches. In some embodiments, to facilitate uniform gas flow conductance through the faceplate 255, the length of all or substantially all (e.g., the central hole may differ) of the lower cylindrical portion 264 may be the same or substantially the same. For example, the length of the lower cylindrical portion 264 may be between approximately 0.025 inches and 0.500 inches, between approximately 0.050 inches and 0.250 inches, or between approximately 0.075 inches and 0.100 inches. As will be described in more detail below, the length of the upper cylindrical portion 262 can be adjusted from opening 260 to opening 260 in order to accommodate the lower cylindrical portion 264 which has the same length.

[0029]

[0035] In some embodiments, the flow conductance through substantially all of the multiple openings may be substantially equal. For example, the flow conductance is D 4 It can be driven by the relationship / L, where D is the minimum diameter of a given opening (e.g., the lower cylindrical portion 264) and L is the length of such a portion of the opening. All or substantially all (e.g., at least 90%, at least 95%, at least 99%, one opening (e.g., the central opening), or all but all openings) may have equal or substantially equal flow conductance across the surface of the faceplate 255 (e.g., within 10%, within 5%, within 3%, within 1%, or less).

[0030]

[0036] Depending on the size of the faceplate 255 and the size of the openings 260, the faceplate 255 can define any number of openings 260 passing through the plate, such as approximately 1,000 or more, approximately 2,000 or more, approximately 3,000 or more, approximately 4,000 or more, approximately 5,000 or more, approximately 6,000 or more. As described above, the openings 260 may be contained in a set of rings extending outward from the central axis of the faceplate 255, and may contain any number of rings as described above. The rings may be characterized by any number of shapes, including circular or elliptical, as well as any other outline patterns, such as rectangular, hexagonal, or any other outline patterns that may contain openings distributed in a number of rings radially outward. The openings may have uniform or staggered spacing and may be spaced about 10 mm or less from center to center. The openings may be spaced approximately 9 mm or less, 8 mm or less, 7 mm or less, 6 mm or less, 5 mm or less, 4 mm or less, 3 mm or less, or less.

[0031]

[0037] The rings can be characterized by any shape, as described above, and in some embodiments, the openings can be characterized by a scaling function of the number of openings per ring. For example, in some embodiments, the first opening can extend along the central axis through the center of the faceplate, as shown in the figure. The first ring of openings can extend around the central opening and may contain any number of openings, such as between about 4 and about 10, and these openings can be spaced equally apart around a shape that penetrates the center of each opening. Any number of additional rings of openings can extend radially outward from the first ring and may contain several openings that can be a function of the number of openings in the first ring. For example, the number of openings in each consecutive ring can be characterized by the number of openings in each corresponding ring according to the formula XR, where X is the base number of openings and R is the number of corresponding rings. The basic number of openings may be the number of openings in the first ring, and in some embodiments, it may be any other number, as will be further described later, when the first ring has an increased number of openings. For example, in an exemplary faceplate having five openings distributed around the first ring, if 5 is the basic number of openings, then the second ring may be characterized by 10 openings, (5) × (2), the third ring may be characterized by 15 openings, (5) × (3), and the 20th ring may be characterized by 100 openings, (5) × (20). This can continue for any number of rings of openings, such as up to, more than, or about 50 rings, as described above. In some embodiments, each opening of a plurality of openings across the faceplate may be characterized by an opening profile, which may be the same or different in embodiments of the present art.

[0032]

[0038] Figure 3 shows a schematic cross-sectional view of a faceplate 300 according to several embodiments of the present technology. The faceplate 300 can be used as faceplate 146, showerhead 118, and / or faceplate 255 as described above with respect to Figures 1 and 2, and further details relating to the faceplate can be shown. In some embodiments, the faceplate 300 may include a plate 302 which may be formed from a conductive material. The plate 302 may feature a first surface 304 and a second surface 306 opposite to the first surface 304. In some embodiments, the first surface 304 may be the top surface of the plate 302 and may face the upstream side of the processing chamber, and the second surface 306 faces the substrate support of the processing chamber. For example, in some embodiments, the second surface 306 of the plate 302 and the substrate support can at least partially define the processing area of ​​the processing chamber. In other embodiments, the orientation of the first and second surfaces may be reversed. As shown in the illustration, the second surface 306 of the plate 302 may define several recesses 308. Each recess 308 may extend through a portion of the thickness of the plate 302, such as extending from the second surface 306 toward the first surface 304 without extending through the first surface 304. In some embodiments, each recess 308 may have a generally cylindrical cross-section, but other shapes are also possible.

[0033]

[0039] Depending on the size of the faceplate 300 and the size of the recesses 308, the faceplate 300 may define any number of recesses passing through the plate 330, for example, about 1,000 or more recesses, about 2,000 or more recesses, about 3,000 or more recesses, about 4,000 or more recesses, about 5,000 or more recesses, about 600 or more recesses, or more recesses. The recesses 308 may be distributed around the second surface 306 in a pattern similar to the openings 260 of the faceplate 255. For example, the recesses 308 may be contained in a set of rings extending outward from the central axis of the faceplate 300, and may contain any number of rings as described above. The rings may be characterized by any number of shapes, including circular or elliptical, as well as any other geometric patterns, such as rectangular, hexagonal, or any other geometric patterns that may contain recesses distributed in a number of rings extending radially outward. The recesses may have uniform or staggered spacing and may have a spacing of about 10 mm or less from center to center. The recesses may also be spaced at intervals of approximately 9 mm or less, approximately 8 mm or less, approximately 7 mm or less, approximately 6 mm or less, approximately 5 mm or less, approximately 4 mm or less, approximately 3 mm or less, or less.

[0034]

[0040] The rings can be characterized by any geometric shape as described above, and in some embodiments, the recesses can be characterized by a scaling function of the recesses in each ring. For example, in some embodiments, the first recesses can extend along the central axis and through the center of the faceplate, as shown. The first ring of recesses extends around the central recess and may contain any number of recesses, such as about 4 to about 10 recesses, which may be equally spaced around a geometric shape extending through the center of each opening. Any number of additional recess rings can extend radially outward from the first ring and may contain several recesses, which may be a function of the number of recesses in the first ring. For example, the number of recesses in each successive ring can be characterized by the number of recesses in each corresponding ring, according to the formula XR, where X is the base number of recesses and R is the number of corresponding rings. The base number of recesses may be the number of recesses in the first ring, and may be other numbers, as will be further described later, in some embodiments when the first ring has a reinforced number of recesses. For example, in the case of an exemplary panel having five recesses distributed around a first ring, the second ring may be characterized by 10 recesses, (5) × (2), the third ring by 15 recesses, (5) × (3), and the 20th ring by 100 recesses, (5) × (20). This can be continued for any number of recesses, such as up to approximately 50 rings or more, as previously mentioned.

[0035]

[0041] The plate 302 may define several openings 310 that penetrate the thickness of the plate 302. For example, the bottom or base of each recess 308 may define an opening 310 that penetrates the bottom of the recess 308 and the first surface 304 of the plate 302. In some embodiments, each opening 310 may be centered relative to the corresponding recess 308, but in some embodiments, the opening 310 may be offset relative to the central axis of the corresponding recess 308. Each recess 308 may have a larger diameter than the opening 310 that penetrates the bottom of the recess 308. This may allow the base of the recess 308 to define a shelf 312 facing away from the first surface 304.

[0036]

[0042] The faceplate 300 may include several shape memory actuators 314. Each shape memory actuator 314 may be placed in one of the recesses 308, for example, to abut against a shelf 312. In some embodiments, each recess 308 may include a dedicated shape memory actuator 314. Each shape memory actuator 314 may define an actuator opening 316 that extends through the thickness of the shape memory actuator 314. When the shape memory actuator 314 is inserted into the recess 308, the actuator opening 316 may be aligned with an opening 310 defined through the recess 308. This allows the recess 308, the opening 310, and the actuator opening 316 to provide a fluid path through the faceplate 300 for supplying gas, plasma, and / or other fluids to the processing area of ​​the chamber. In some embodiments, the actuator opening 316 can be sized to be smaller than the opening 310, thereby enabling the actuator opening 316 to control the flow conductance through the opening 310.

[0037]

[0043] The shape memory actuator 314 can be configured to change shape when an external stimulus is applied, thereby changing or otherwise adjusting the diameter of the actuator opening 316. By adjusting the diameter of the actuator opening 316, it may be possible to carefully control the conductance of the flow through the actuator opening 316 (and the subsequent faceplate 300). For example, the size of the diameter of the actuator opening 316 can be increased or decreased by applying an external stimulus to one or more of the shape memory actuators 314. In some embodiments, the diameter of the actuator opening 316 may be a value in any range between 1 mil and 1000 mil, between 5 mil and 500 mil, between 10 mil and 100 mil, and / or any value in between.

[0038]

[0044] Each shape memory actuator 314 may include a shape memory material that can move from one shape and / or size to another shape (or range of size and shape) upon the application or removal of external stimuli (such as heat and / or electric current). In some embodiments, the shape memory material may include nickel-titanium alloys (e.g., Nitinol), nickel-titanium-cobalt alloys, nickel-titanium-copper alloys, copper-aluminum-nickel alloys, and / or other shape memory materials that may include nickel, titanium, zinc, copper, gold, iron, and / or other materials. In some embodiments, the shape memory material may not be compatible with the chamber environment / chemicals for a given operation. To mitigate such problems, each shape memory actuator 314 may include an outer layer, coating, or other material that can protect or isolate the shape memory material from the chamber environment. For example, each shape memory actuator 314 may include a shape memory inner material and a chamber-compatible outer material. Chamber compatibility may include an elastic, malleable, and / or deformable material that protects the shape memory material while still allowing changes in the shape and / or size of the shape memory material. In some embodiments, the chamber-compatible material may be a polymer material such as polytetrafluoroethylene (PTFE).

[0039]

[0045] Shape memory materials can take many forms. For example, in the illustrated embodiment, the shape memory material has a conical spring shape. When a stimulus is applied to the shape memory material, the steepness of the conical spring shape changes, and as a result, the diameter of the actuator opening 316 changes. For example, as shown, the shape memory actuator 314a is shown in an unstimulated configuration, while the shape memory actuator 314b is shown in a stimulated configuration. In the stimulated configuration, the steepness of the shape memory actuator 314b is greater, and as a result, the diameter of the actuator opening 316 of the shape memory actuator 314b is increased. In various embodiments, it will be understood that the stimulation configuration can reduce the diameter of the actuator opening 316 of the shape memory actuator 314b. In some embodiments, the operation of the shape memory actuator 314 can be binary, such that the shape memory actuator 314 can move from a first neutral position to a second operating position in response to a stimulus, without an intermediate position. Such operation may be used to adjust the actuator opening 316 between a first diameter and a second diameter. In other embodiments, the operation of the shape memory actuator 314 may be progressive, so that, by stimulation, the shape memory actuator 314 can move from a first neutral position to a second operating position at any number of intermediate positions (e.g., regular or irregular intervals, gradual transitions, and / or other transitions). Such operation can be used to adjust the actuator opening 316 to any number of diameters between a minimum diameter and a maximum diameter, allowing for more accurate and precise adjustment of the actuator opening diameter and providing greater control over the flow conductance through all or part of the faceplate 300 (including a single opening 310). The diameter of the actuator opening 316 may be measured at the minimum point of each opening. For example, if the shape memory actuator 314 is generally conical, the diameter of the actuator opening 316 may be measured near the narrow end of the cone.

[0040]

[0046] As described above, the shape memory actuator 314 can take various forms. In the illustrated embodiment, the shape memory actuator 314 is generally conical and includes a conical spring-shaped shape memory inner material and a chamber-fitting outer material that is generally conical or frustoconical in shape, defining the schematic shape of each shape memory actuator 314. Each shape memory actuator 314 may include one or more inner walls 318, one or more outer walls 320, an upper end 322, and a lower end 324. The lower end 324 may be generally planar in some embodiments and may be positioned relative to the bottom surface of one of the recesses 308, such as being placed on a shelf 312. The inner wall 318 may define the actuator opening 316. In the illustrated embodiment, the inner wall 318 is generally frustoconical, but other wall shapes, including cylindrical walls, may also be used. In some embodiments, the lower end of the actuator opening 316 may coincide with or substantially coincide with the diameter of the opening 310 (e.g., within 10%, 5%, 3%, 1%), while in other embodiments, the diameter of the actuator opening 316 may be smaller or larger than that of the opening 310. In some embodiments, at least a portion of the outer wall 320 may always be in contact with the side wall of the recess 308, including when the shape memory actuator 314 is in an unstimulated configuration. For example, as shown, the bottom of the outer wall 320 may be generally cylindrical and may abut the side wall of the recess 308 in both unstimulated and stimulated configurations. Such a design may help maintain the shape memory actuator 314 in a desired position within the recess 308, even during the operation of the shape memory actuator 314 (e.g., resizing and / or reshaping). In the illustrated embodiment, the top of the outer wall 320 has a frustoconical shape, but other designs are possible in various embodiments. In some embodiments, the thickness of the shape memory actuator 314 may vary along its length. For example, in the illustrated embodiment, the shape memory actuator 314 is thicker near the lower end 324 and tapers to a narrower thickness at the upper end 322.Such a design may help the upper end 322 (which defines the narrowest part of the actuator opening 316 and then defines the flow conductance through the shape memory actuator 314) to be flexible enough to change the diameter of the actuator opening 316, while the thicker lower end 324 provides strength and rigidity to the shape memory actuator 314, allowing the shape 314 to be maintained in the desired position within the recess 308.

[0041]

[0047] In some embodiments, the shape memory actuator 314 can be sized such that the upper end 322 remains at or below the boundary of the recess 308 in both the unstimulated and fully stimulated configurations. In other embodiments, the upper end 322 may extend beyond the boundary of the recess 308 in both the unstimulated and / or fully stimulated configurations.

[0042]

[0048] As best illustrated in Figures 3A to 3C, the faceplate 300 may include several stimulation lines 328 that can connect the shape memory actuators 314 to one or more sources of stimulation. For example, in some embodiments, the stimulation lines 328 may be electrical wires, each electrically connected to at least one of the shape memory actuators 314. Each electrical line may supply current to one or more shape memory actuators 314. The current may be a stimulus that changes the size and / or shape of the shape memory actuators 314. For example, the current may cause the conical shape of the shape memory actuator 314 to become flatter or steeper, increasing or decreasing the diameter of the actuator opening 316. In other embodiments, the stimulation lines 328 may be resistive heating lines, each coupled to at least one of the shape memory actuators 314. Each resistive heating line may heat one or more of the shape memory actuators 314. The heat may be a stimulus that changes the size and / or shape of the shape memory actuators 314. For example, applying heat may cause the conical shape of the shape memory actuator 314 to become flatter or steeper, potentially increasing or decreasing the diameter of the actuator opening 316.

[0043]

[0049] Each stimulation wire 328 can be connected to one or more power sources 326 capable of supplying current to the stimulation wire 328. The current may be supplied to a shape memory actuator 314 (for example, if the stimulation wire 328 is an electrical wire) and / or converted to heat for supply to the shape memory actuator 314 (for example, if the stimulation wire 328 is a resistance heating wire). In some embodiments, each stimulation wire 328 in the faceplate 300 may be the same type of stimulation wire 328, but in other embodiments, a mixture of different types of stimulation wires (e.g., electrical wires, resistance heating wires, and / or other types of stimulation wires) may be used in a single faceplate 300.

[0044]

[0050] The stimulation wires 328 can be provided in various forms. For example, some or all of the stimulation wires 328 can be printed, deposited, and / or otherwise formed on the first surface 304 or the second surface 306, and / or coupled to the first surface 304 or the second surface 306. In some embodiments, some or all of the stimulation wires 328 can be formed or otherwise positioned within the plate 302. Part of each stimulation wire 328 can be positioned in close proximity to and / or in contact with one or more shape memory actuators 314. As just one example, part of each stimulation wire 328 can extend into part of the recess 308 and / or into the shape memory actuator 314 (and optionally its shape memory material) located within the recess 308, and be coupled to part of the recess 308 and / or the shape memory actuator 314. In some embodiments, the stimulation wires 328 may be wires, coils, and / or other metal pieces, or other electrically and / or thermally conductive materials.

[0045]

[0051] The stimulation lines 328 are arranged around the faceplate 300 to provide several independently controllable zones. For example, the amount of current or power supplied to each zone may vary to control the operation of the shape memory actuators 314 within a given zone, and subsequently the diameter of the actuator openings 316. In some embodiments, each zone may receive the same amount of current (or current for each shape memory actuator 314 within a given zone), while in other embodiments, some or all of the zones may receive different amounts of current (or current for each shape memory actuator 314 within a given zone). Thus, by using individually controlled zones, it becomes possible to carefully control the diameter of the actuator openings 316 within a given zone to provide a desired flow conductance profile through the faceplate 300. The faceplate 300 may contain any number of zones, and the more zones there are, the finer the granularity of control over the flow conductance profile through the faceplate 300. For example, the panel 300 may include at least two zones, at least three zones, at least four zones, at least five zones, at least six zones, at least seven zones, at least eight zones, at least nine zones, at least ten zones, at least 20 zones, at least 30 zones, at least 40 zones, at least 50 zones, or more. In some embodiments, each shape memory actuator 314 may include a dedicated stimulation line 328 to form a full zone. In some embodiments, each shape memory actuator 314 may be connected to a single stimulation line 328 and be part of a single zone, while in other embodiments, some or all of the shape memory actuators 314 may be connected to multiple stimulation lines 328 to form parts of multiple zones.

[0046]

[0052] The zones can be arranged in various forms to address various non-uniformity issues. For example, as shown in Figure 3A, the stimulation lines 328a are arranged as several annular zones coaxial with each other. Each zone may be annular in shape, containing one or more rings of the shape memory actuator 314. Such stimulation lines 328a can be used to address radial uniformity issues. As shown in Figure 3B, the stimulation lines 328b are arranged as several radial zones. For example, each zone may include stimulation lines 328b extending radially outward from or near the center of the faceplate 300 and / or radially inward from or near the edge of the faceplate 300, and each zone may contain one or more radial lines of the shape memory actuator 314. Such stimulation lines 328b can be used to address residual uniformity issues. As shown in Figure 3C, the stimulation lines 328c are arranged as a combination of radial and arcuate zones. The radial zone may extend from the innermost row / ring of the shape memory actuator 314 to the outermost row / ring of the shape memory actuator 314, and / or along only a portion of the row / ring of the shape memory actuator, and the arcuate zone may extend in less than 360 degrees around the central axis of the faceplate 300 (i.e., it may be annular).

[0047]

[0053] Although shown as being symmetrically arranged, it will be understood that the zones of the stimulation line 328 may be asymmetrically arranged in some embodiments. The zones may be defined by radial and / or angular position, number of openings, and / or any other criteria. In some embodiments, the number of shape memory actuators 314 in each zone may be equal, but in other embodiments, some or all of the zones may contain a different number of shape memory actuators 314.

[0048]

[0054] Here, it is shown as a single-channel faceplate (for example, all material passing through faceplate 300 passes through the same set of actuator openings 316), but it will be understood that in some embodiments, faceplate 300 may be a dual-channel and / or other multi-channel faceplate. In such embodiments, faceplate 300 may define at least one additional set of openings that can form separate channels for other materials to pass through without mixing with the material flowing through the actuator openings 316 within faceplate 300. In some embodiments, the additional openings may have a fixed diameter and / or include an additional set of shape memory actuators (which may be formed in a manner similar to those described herein). In the single-channel embodiment, faceplate 300 may include only openings 310 aligned with shape memory actuators 314 and / or also include a subset of openings having a fixed diameter.

[0049]

[0055] By using the shape memory actuator 314, the flow conductance through the faceplate 300 can be customized to meet the needs of a specific processing chamber and / or deposition / etching chemical. Integrating the shape memory actuator 314 into the faceplate 300 eliminates or reduces the need to replace faceplates with different perforation layouts when the processing chemical changes, and improves the efficiency of such transitions while reducing the resources required for manufacturing faceplates, as a single faceplate design can be used for a wide variety of processing chambers / applications. The flow conductance through one or more zones of the faceplate 300 may be adjusted to address various film thickness uniformity issues and may be adjusted before the start of the deposition operation and / or in situ. As just one example, one or more substrates may be processed with a given flow conductance profile. A film thickness profile can be generated from the substrate, and the film thickness profile can be analyzed to determine where the deposition rate is too fast and / or too slow. The diameter of the actuator openings 316 in one or more zones of the faceplate 300 is adjusted based on this analysis, and the flow conductance and deposition rate can be varied to combat various regions of film thickness non-uniformity.

[0050]

[0056] Figure 4 shows the operation of an exemplary method 400 for semiconductor processing according to several embodiments of the present technology. The method can be performed in various processing chambers, including the processing chamber 200 described above, and may include a panel according to embodiments of the present technology, such as a panel 300. Method 400 may include a number of optional operations, which may or may not be specifically associated with certain embodiments of the method according to the present technology.

[0051]

[0057] Method 400 may include a processing method which may include a step for forming a hard mask film or other deposition steps. The method may include optional steps before starting Method 400, or the method may include additional steps. For example, Method 400 may include steps performed in a different order than those shown. In some embodiments, Method 400 may include supplying current to the faceplate in step 405. The current may be used to adjust the diameter of the actuator openings of a shape memory actuator (such as shape memory actuator 314) in order to control the flow conductance through the faceplate. For example, in some embodiments, current may be supplied to some or all of the shape memory actuators to change the diameter of each actuator opening. In other embodiments, current may be used to heat one or more resistance heating lines positioned in close proximity to some or all of the shape memory actuators. The heat from the resistance heating lines may change the diameter of each actuator opening. Current and / or thermal stimulation may be supplied to the shape memory actuators via several stimulation lines (e.g., electrical wires and / or resistance heating lines) connected to the faceplate. The diameter of the actuator opening can be controlled in any number of independently controllable zones, thereby changing the flow conductance profile through the faceplate to meet the specific application needs for achieving a desired film thickness profile. For example, some shape memory actuators may have actuator openings with different diameters to address the issue of film thickness uniformity.

[0052]

[0058] In some embodiments, method 400 may include, in operation 410, flowing one or more precursors into a processing chamber through actuator openings (and / or other openings) of a shape memory actuator. For example, the precursors can flow into a chamber such as chamber 200, and the precursors can be flowed through one or more of a gas box, a blocker plate, or a faceplate (such as faceplate 300) before being delivered into the processing area of ​​the chamber. In step 415, plasma may be generated from the precursors in the processing area, for example, by supplying RF power to the faceplate to generate plasma. In step 420, the material formed in the plasma may be deposited onto a substrate.

[0053]

[0059] In some embodiments, Method 400 may optionally include determining a desired flow conductance profile through the faceplate. For example, one or more substrates (e.g., sample substrates) may be processed with a predetermined flow conductance profile. In an optional step 425, a film thickness profile exhibiting any non-uniformity may be generated from the substrate, which may be analyzed in an optional step 430 to determine locations where the deposition rate is too high and / or too low. Based on the analysis, Method 400 may include, in an optional step 435, adjusting the current supplied to at least some of the shape memory actuators to adjust the actuator opening diameters of at least some of the shape memory actuators. Such adjustments may vary the flow conductance and deposition rate to combat various regions of film thickness non-uniformity. The process of analyzing the film thickness profile and adjusting the current may be performed any number of times until the processed substrate has the desired film thickness profile.

[0054]

[0060] The above description provides numerous details for illustrative purposes to facilitate understanding of various embodiments of this technology. However, it will be apparent to those skilled in the art that certain embodiments can be implemented without some of these details, or with additional details.

[0055]

[0061] While several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents can be used without departing from the spirit of the embodiments. Furthermore, several well-known processes and elements have not been described in order to avoid unnecessarily obscuring the Art. Therefore, the above description should not be considered to limit the scope of the Art.

[0056]

[0062] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as they are commonly or conventionally understood. Where used herein, the articles “a” and “an” refer to one or more of the grammatical purposes of the article (i.e., at least one). For example, “element” means one element or two or more elements. Where used herein in reference to measurable values ​​such as quantities, time durations, etc., “about” and / or “approximately” encompass variations of ±20%, ±10%, ±5%, or +0.1% from a given value, and such variations are appropriate in the context of the systems, devices, circuits, methods, and other forms of implementation described herein. Where used herein in reference to measurable values ​​such as quantities, time durations, and physical attributes (such as frequency), “substantially” also encompasses variations of ±20%, ±10%, ±5%, or +0.1% from a given value, as is appropriate in relation to the systems, devices, circuits, methods, and other forms of implementation described herein.

[0057]

[0063] Where a range of values ​​is provided, unless explicitly stated otherwise in the context, each intervening value between the upper and lower limits of that range is, of course, specifically disclosed down to the smallest unit of the lower limit. Any narrow range between any stated or unstated intervening values ​​within the stated range, and any other stated or intervening values ​​within that stated range, are also included. The upper and lower limits of such narrower ranges may be individually included in or excluded from that range. Each range in which one, neither, or both of the limit values ​​are included is also included in the Art, provided that there are limit values ​​specifically excluded within the stated range. Where the defined range includes one or both of the limit values, the range excluding one or both of the included limit values ​​is also included.

[0058]

[0064] As used herein and in the claims, the singular forms “a,” “an,” and “the” include multiple references unless the context clearly indicates otherwise. Thus, for example, “a heater” refers to multiple such heaters, and “the protrusion” refers to one or more protrusions and equivalents known to those skilled in the art, and the same applies to other forms.

[0059]

[0065] Furthermore, the terms “comprise(s),” “comprising,” “contain(s),” “containing,” “include(s),” and “including,” as used herein and in the claims, are intended to identify the presence of the described features, integers, components, or steps, but not to exclude the presence or addition of one or more other features, integers, components, processes, operations, or groups.

Claims

1. A panel for a substrate processing system, wherein the panel is A plate characterized by a first surface and a second surface opposite to the first surface. Equipped with, The second surface defines a plurality of recesses that penetrate a portion of the thickness of the plate, The plate defines a plurality of openings that penetrate the thickness of the plate, Each opening penetrates the bottom surface of one of the plurality of recesses, The aforementioned panel further, Multiple shape memory actuators Equipped with, Each shape memory actuator is placed in one of the plurality of recesses, Each shape memory actuator defines an actuator opening, The diameter of the actuator opening of each shape memory actuator is variable. Panel for a circuit board processing system.

2. The panel further comprises a plurality of electrical lines connected to the plate, Each electrical wire is electrically connected to at least one of the shape memory actuators. The diameter of the actuator opening of each shape memory actuator is variable when current is applied. A panel for the substrate processing system according to claim 1.

3. The panel of the substrate processing system according to claim 2, wherein the plurality of electrical lines are arranged to provide a plurality of individually controllable zones.

4. The panel of the substrate processing system according to claim 3, wherein the plurality of individually controllable zones include an annular zone.

5. The panel of the substrate processing system according to claim 3, wherein the plurality of individually controllable zones include radial zones.

6. The panel further comprises a plurality of resistance heating lines connected to the plate, Each resistance heating line is electrically connected to at least one of the shape memory actuators. The diameter of the actuator opening of each shape memory actuator is variable when heat is applied. A panel for the substrate processing system according to claim 1.

7. A panel for a substrate processing system according to claim 1, wherein each shape memory actuator contains nitinol.

8. A panel for a substrate processing system according to claim 1, wherein each shape memory actuator is generally conical in shape.

9. A panel for a substrate processing system according to claim 1, wherein each shape memory actuator includes a shape memory inner material and a chamber-compatible outer material.

10. The panel for the substrate processing system according to claim 9, wherein the chamber-compatible outer material comprises polytetrafluoroethylene.

11. The panel for the substrate processing system according to claim 9, wherein the shape memory inner material has a conical spring shape.

12. A substrate processing chamber, wherein the substrate processing chamber is Chamber body and A substrate support arranged inside the chamber body, A faceplate supported on the chamber body, comprising a plate characterized by a first surface and a second surface opposite to the first surface. Equipped with, The second surface defines a plurality of recesses that penetrate a portion of the thickness of the plate, The plate defines a plurality of openings that penetrate the thickness of the plate, Each opening penetrates the bottom surface of one of the plurality of recesses, The substrate processing chamber further, Multiple shape memory actuators Equipped with, Each shape memory actuator is placed in one of the plurality of recesses, Each shape memory actuator defines an actuator opening, The diameter of the actuator opening of each shape memory actuator is variable. Substrate processing chamber.

13. The substrate processing chamber according to claim 12, wherein the second surface faces the substrate support.

14. The substrate processing chamber further comprises at least one power supply, The panel comprises a plurality of electrical lines connected to the plate, Each electrical line is electrically connected to at least one of the power sources, Each electrical line is electrically connected to at least one of the shape memory actuators. The diameter of the actuator opening of each shape memory actuator is variable when current is applied. A substrate processing chamber according to claim 12.

15. The substrate processing chamber further comprises at least one power supply, The panel comprises a plurality of resistance heating lines connected to the plate, Each resistance heating line is electrically connected to at least one of the power supplies. Each resistance heating line is electrically connected to at least one of the shape memory actuators. The diameter of the actuator opening in each shape memory actuator is variable when heat is applied. A substrate processing chamber according to claim 12.

16. A method for processing a substrate, which includes supplying current to the panel, The aforementioned panel comprises a plurality of shape memory actuators, each shape memory actuator defining an actuator opening, The current sets the diameter of each actuator opening. The precursor is flowed into the processing chamber through the actuator openings of the plurality of shape memory actuators, To generate a precursor plasma within the processing area of ​​the processing chamber. A method for processing a substrate, including the processing of a substrate.

17. Determining a desired flow conductance profile through the aforementioned faceplate, To adjust the diameter of the actuator openings of at least some of the plurality of shape memory actuators, the current supplied to at least some of the plurality of shape memory actuators is adjusted. A method for processing a substrate according to claim 16, further comprising:

18. The method for processing a substrate according to claim 16, wherein at least some of the plurality of shape memory actuators have actuator openings having different diameters.

19. A method for processing a substrate according to claim 16, wherein supplying current to the panel includes supplying the current to at least some of the plurality of shape memory actuators via one or more electrical lines.

20. A method for processing a substrate according to claim 16, wherein supplying current to the panel includes supplying current to one or more resistive heating elements of the panel, and the one or more resistive heating elements are connected to at least some of the plurality of shape memory actuators.

Images