A component comprising a power semiconductor module and a cooling device.

Abstract

The present invention relates to a component (1), which comprises a power semiconductor module (10) having at least one power semiconductor element (24) and at least two power terminals (11), and at least one cooling device (40) including a partially curved circuit (50) for a first coolant, the circuit (50) configured to form a self-oscillating heat pipe, the circuit (50) having at least one evaporator side (56) for evaporating a first coolant from a heat input to the first surface (42) and at least one condenser side (58) for condensing the first coolant, the at least one condenser side (58) being located on the side away from the first surface (42) and configured to be thermally coupled to a flow path (62) for a second coolant, the power semiconductor module (10) being located on the first surface (42).

Description

Technical Field

[0001] Technical Field The present invention relates to a structure comprising a power semiconductor module having at least one power semiconductor element and at least one cooling device having a circuit for a first coolant, the power semiconductor module being arranged on a first surface of the cooling device thermally coupled to the circuit. The present invention further relates to a system, an array and a use.

Background Art

[0002] Background Art Generally speaking, a power semiconductor module comprises power semiconductor elements such as MOSFETs, IGBTs or diodes that dissipate electrical energy in the form of heat during operation. Cooling of the power semiconductor module is essential to ensure proper electrical behavior and reliable operation. The above structure generally provides a cooling function for the power semiconductor module by means of a cooling device. The cooling device operates by means of a coolant such as a liquid coolant and / or a gas coolant and / or may contain a coolant.

[0003] Conventionally, the cooling device is designed separately from the power semiconductor module and is then attached to the module using, for example, a clamping system and contact from the perspective of area or other methods. This is referred to as an individual cooling approach. However, this approach creates some thermal resistance between the power semiconductor element and the cooling device.

[0004] Alternatively, or in addition to, a direct cooling approach has been developed that integrates the cooling device with the power semiconductor element, reducing thermal resistance by bringing the cooler closer to the power semiconductor element. For example, the base plate of a power semiconductor module may have integrated cooling fins and / or circuits that allow heat extraction by flowing a liquid and / or gas, such as a coolant. In addition to thermal performance, safety in the event of failure is also important, especially in modular high-voltage systems such as HVDC systems with components. Power semiconductor modules can be subjected to large amounts of stress, which can result in arcing and / or explosions that damage the cooling device. Damage to the cooling device can lead to failure of the power semiconductor module. Therefore, it is important to eliminate the risk of damage to the cooling device.

[0005] The individual cooling approach described above has been adopted in HVDC systems because it allows for a conservative design of the cooling system, reducing the risk of failure. However, it introduces thermal resistance that limits the performance of the cooling system. The direct cooling approach described above eliminates some thermal resistance and significantly improves thermal performance, but it is prone to water leakage when power semiconductor elements fail. [Overview of the Initiative] [Problems that the invention aims to solve]

[0006] Summary of the Invention Therefore, an object of the present invention is to provide a solution for a structure with improved thermal performance. In particular, an object is to avoid or mitigate the disadvantages of known solutions. [Means for solving the problem]

[0007] The object of the present invention is resolved by the features of the independent claim. Preferred implementations are described in detail in the dependent claims.

[0008] Therefore, the above objective is solved by the construct, and the construct is A power semiconductor module having at least one power semiconductor element and at least two power terminals, The system comprises at least one cooling device including a partially curved circuit for a first coolant, the circuit being configured to form a self-excited oscillating heat pipe, the circuit being thermally coupled to a first face of the at least one cooling device and showing at least one evaporator side for evaporating the first coolant from a heat input to the first face, and at least one condenser side for condensing the first coolant, the at least one condenser side being positioned on the side away from the first face and configured to be thermally coupled to a flow path for a second coolant. The power semiconductor module described above is disposed on the first surface, and in particular in contact with the first surface.

[0009] The proposed solution is based on the idea that a self-oscillating heat pipe is employed in the cooling system to cool the power semiconductor element from the evaporation of a first coolant, with the evaporator side thermally coupled to the power semiconductor element via the first surface, and the condenser side thermally coupled to another circuit handling a different coolant to condense the evaporated first coolant. A key aspect of this idea is that the condenser side is positioned, for example laterally, away from the first surface and / or the contact area with the power semiconductor module, particularly to improve safety in the event of failure.

[0010] In particular, the above configuration relates to a combination of power electronics components and / or at least one power semiconductor module having at least one cooling device.

[0011] In the term "power semiconductor module," the term "power" means, for example, that the module is configured for high current. For instance, a power semiconductor module is configured to handle currents of at least 10A, or at least 50A, or at least 100A, or at least 500A. Correspondingly, a power semiconductor element may be a high-power element, particularly a high-power chip.

[0012] The above-described components are provided, in particular, to form part of a high-voltage direct current (HVDC) system or to form an HVDC system. An HVDC system is, in particular, a type of electrical transmission system that operates at high voltage levels and uses direct current (DC) for power transmission. An HVDC system includes, in particular, a converter station at the transmitting end, a transmission line, and a converter station at the receiving end. At the transmitting end, AC power is converted to DC power, in particular using a rectifier, and the DC power is then transmitted to the receiving end via the transmission line. At the receiving end, the DC power is converted to AC power, in particular using an inverter, and then distributed, for example, to a power grid. HVDC systems are preferred for long-distance power transmission because they have lower losses compared to AC transmission and can connect power systems at various frequencies or voltages.

[0013] Circuits having a “curved shape” are related to circuits that exhibit, at least partially and essentially, a winding and / or zigzag path. The circuit may preferably comprise a series of sequential changes of direction, curves and / or bends that change direction and / or alternate.

[0014] The cooling device is substantially configured to transfer heat away from the first surface. For this reason, a self-excited oscillating heat pipe is provided.

[0015] A self-oscillating heat pipe, also known as a vibrating heat pipe, is a heat dissipation means having a two-phase heat transfer mechanism. A self-oscillating heat pipe comprises a bent / serpentine circuit, such as a capillary tube, and generally has a condenser side as a condensing section, optionally an essentially adiabatic section, and an evaporator side as a heating section. The circuit is filled with a first coolant, such as a liquid, fluid, or both. Heating the condenser side, for example, through the first surface, causes the first coolant to evaporate as the working medium absorbs heat, i.e., a gas is produced. This gas exists as bubbles. The increase in static pressure in the circuit on the evaporator side generally forces the first coolant to flow towards the condenser side. Upon reaching the condenser side, the gas condenses back into a liquid state due to heat extraction from the condenser side through the flow path, causing a pressure drop in the circuit. A self-oscillating heat pipe operates passively with only heat input and heat output. Due to the pressure imbalance between these two sides, the first coolant oscillates / pulsates between these two sides, providing an autonomous mechanism. In contrast to solid materials, in a self-oscillating heat pipe, an increase in heat input increases the heat transfer capacity not proportionally but rather exponentially, due to the increased speed of coolant movement and the increase in pressure difference. In other words, heat transfer away from the first surface improves at higher loads. This is even beneficial for safety in the event of failure. The cooling device may have two or more evaporator sides. For example, two evaporator sides may be provided. The cooling device may have two or more condenser sides. For example, a condenser-evaporator side may be provided. For example, the two condenser sides may be spaced apart from each other, for example, laterally, with at least one evaporator side or two or more evaporator sides and / or the first surface interposed between them. It is also possible that the two evaporator sides and / or the first surface may be spaced apart from each other, for example, laterally, with at least one condenser side interposed between them. The circuit may extend between all evaporator and condenser sides and the first surface.The cooling system may include two or more circuits for forming two or more self-excited oscillating heat pipes, for example for safety in the event of failure and / or for using various first coolants and self-excited oscillating heat pipe designs.

[0016] In particular, the phrase "at least one" can be translated as "one or more," implying that having more than one is a favorable option. Especially when it says "at least one," it may be optional to provide "two or more" or "plural" corresponding features. However, when a feature is introduced with an indefinite article such as "a" or "an" instead of "at least one," this does not mean that multiple of the above features are excluded. Also, an indefinite article such as "a" or "an" may be replaced with "at least one."

[0017] The “first surface” refers, in particular, to the contact area between the cooling device and the power semiconductor module, and / or to the area on the cooling device that is covered (or should be covered) by the power semiconductor module in a top view. The first surface can be understood as the area of ​​the cooling device provided in accordance with the shape of the power semiconductor module, in particular. The first surface may be included in a part of a larger surface of the cooling device, and / or surrounded by a part of a larger surface of the cooling device. In particular, the first surface may be at least partially and / or completely flat. The first surface may have a square or rectangular shape.

[0018] Further advantageous realizations of the present invention are shown below. The features named in these realizations may be combined individually or considered independently. These features may be considered in methods and / or power semiconductor modules.

[0019] In a preferred implementation, a power semiconductor module, particularly at least one power semiconductor element, is in contact with a first surface, with or without a thermal interface material such as a heat paste or thermal heat transfer pad. The power semiconductor element may be in direct or indirect contact with the first surface for heat transfer by thermal conduction. This improves heat transfer on the condenser side and further improves heat transfer from the power semiconductor element.

[0020] The heat paste may contain silicon and / or silver. The thermal heat transfer pad may be made of at least partially flexible material configured to conform to the first surface and / or the surface of a power semiconductor element or the like.

[0021] Alternatively, or in addition to the above, the power semiconductor module may include a substrate structure supporting at least one power semiconductor element. The substrate structure may be placed on the first surface with or without a thermal interface material interposed, such as a heat paste or thermal heat transfer pad. The substrate structure may be in direct or indirect contact with the first surface, particularly on its underside and / or on the side opposite the power semiconductor element, for heat transfer by thermal conduction. This improves heat transfer on the condenser side and allows the power semiconductor element to be manufactured separately as part of the substrate structure.

[0022] In another preferred embodiment, the substrate structure has a base plate, an insulating material and / or a metallization layer. The insulating material can be attached to the base plate. The metallization layer can be provided as a layer on the insulating material. The metallization layer can have grooves to form individual conductive sections of the metallization layer. The substrate structure can provide an electrical contact platform for one, several or all of the power semiconductor devices. Instead or in addition thereto, the substrate structure may include an insulating material made of, for example, ceramic and / or plastic. This insulating material can have a plate shape and / or a layered shape.

[0023] In another preferred embodiment, the substrate structure has a gate - runner substrate for forming a gate connection. The gate connection can be formed by wire bonding, soldering, sintering, and / or spring - loaded contact. The substrate structure can include spacers, for example, for spacing the power semiconductor device and / or towards the first surface.

[0024] In another preferred embodiment, a molding material is provided, which is preferably a molding polymer material, particularly a thermosetting epoxy molding compound and / or a thermoplastic compound. The molding material is provided particularly for packaging at least one power semiconductor device. The molding material can be part of a power semiconductor module. The power semiconductor module can be formed at least in part by overmolding and / or injection molding onto a part of the power semiconductor module. The power semiconductor module can be formed as a structural unit to facilitate handling and robustness of the power semiconductor module.

[0025] In another preferred embodiment, at least one cooling device, particularly the first surface, includes or is composed of a metal material. Preferably, the metal material includes a metal alloy with copper, aluminum and / or molybdenum. The circuit can be formed within this metal material. The first surface can be the outer surface of the metal material.

[0026] At least one cooling device, particularly the first surface, preferably has a surface treatment, particularly is machined, zinc-plated, metal-plated, and / or tinned. The cooling device can be ground and / or machined by milling to obtain excellent heat conduction and provide a smooth surface. The surface treatment can provide a low surface roughness for obtaining a low thermal resistance, can provide electrical insulation, and / or can improve durability and / or corrosion resistance. In another preferred embodiment, the power semiconductor module and the first surface are joined by a bonding layer, by eutectic bonding, and / or by laser welding. The bonding layer can particularly include a solder layer based on SnAg, SnSb, SAC, etc., and / or a sintered layer based particularly on Cu particles and / or Ag particles. To provide any of the above layers, corresponding materials, particularly metals and / or metal particles, can be installed in the region where the corresponding layer is formed. Thereafter, soldering, eutectic bonding, and / or sintering processes can be applied, for example, by time, pressure, and / or temperature. Such an active material joining and / or monolithic material connection method is beneficial for heat transfer.

[0027] In another preferred embodiment, the flow path is formed by the cooling device and includes a flow path inlet and a flow path outlet. Thus, the flow path can be integral with the cooling device. The flow path for the second coolant can be formed in the same material and / or piece of material as the material in which the circuit for the first coolant is formed. This makes it possible to optimize the heat transfer from the condenser side to the second coolant. According to this embodiment, the cooling device can be cooled from the outside by the second fluid, while the self-excited oscillation type heat pipe in the cooling device can be provided particularly to improve the heat transfer in the cooling device from the first surface to the second fluid.

[0028] In another preferred implementation, the flow path comprises at least partially a flow path conduit. The flow path conduit preferably connects the flow path inlet and flow path outlet and may be thermally coupled to at least one condenser side.

[0029] Flow conduits can extend at least partially in parallel. Therefore, the direction of flow within the flow conduits can be at least essentially the same and / or opposite.

[0030] The flow path may extend in a bent shape, at least partially. In particular, the flow channel conduit may extend in a bent shape. Thus, the flow path has, at least essentially, a winding and / or zigzag path. The flow path may preferably comprise a series of continuous changes of direction, curves and / or bends in which the direction changes and / or alternates. The direction of flow within the flow channel conduit may alternate, at least essentially, after the overall flow of the second coolant.

[0031] Flow channels, particularly flow channel conduits, may have, and / or be formed by, branching structures at least partially, particularly on the condenser side and / or evaporator side. A branching structure refers to a configuration in which a flow channel divides into two or more smaller conduits, e.g., flow channel conduits. These smaller conduits may further divide into even smaller conduits. The branching structure helps to increase the surface area of ​​the flow channel, thereby improving heat transfer, for example, between a second coolant and the condenser side.

[0032] Flow channels, particularly flow channel conduits, may have, and / or be formed with, pin fin structures, at least partially, particularly on the condenser side and / or evaporator side. Pin fin structures refer to structures formed in the walls of the flow channel, e.g., walls that radially divide the flow channel, and / or protrusions, e.g., pins, that reach into the flow channel. The fin structures help to increase the surface area of ​​the flow channel, thereby improving heat transfer, for example, between a second coolant and the condenser side.

[0033] In another preferred embodiment, the cooling element of the cooling device forms a first surface, circuit, and flow path. Flow path inlets and / or flow path outlets may be formed in the cooling element. In other words, the cooling device can supply a second coolant to the flow path, while the circuit provides heat transfer from the first surface to the second coolant.

[0034] In another preferred implementation, the flow conduit has, at least partially, a cross-sectional area greater than 1 square millimeter and / or less than 100 square millimeters, particularly greater than 4 square millimeters and / or less than 14 square millimeters, particularly 9 square millimeters, e.g., ±10%. It has been empirically proven that such a cross-section allows heat transfer away from the cooling device to function efficiently. In another preferred implementation, the circuit includes a circuit inlet and / or circuit outlet for a first coolant, particularly on at least one condenser side. Thus, the first coolant can be filled, refilled, or replaced. The circuit inlet and / or circuit outlet are designed to be closed or can be closed, and / or may be provided with valves.

[0035] The circuit may be partially or entirely filled with a first coolant. The first coolant may be one of the following, or a mixture thereof: refrigerant, R134A, R1234yf, R1233zd / R1233zd(E), R1234ze / R1234ze(E), R1336mzz / R1336mzz(E) / R1336mzz(Z), ammonia, water, or acetone, or may contain these, and in particular, the first coolant may be partially liquid and partially gaseous when considered in a temperature range, for example, greater than 10°C and / or less than 80°C, in particular, the temperature range may be greater than 35°C and / or less than 45°C, or the temperature range may be greater than 18°C ​​and / or less than 26°C.

[0036] Generally, R134A has the chemical name 1,1,1,2-tetrafluoroethane and is a refrigerant with the chemical formula CF3CH2F.

[0037] Generally, R1234yf has the chemical name 2,3,3,3-tetrafluoropropa-1-ene and is a refrigerant with the chemical formula CF3CF=CH2.

[0038] Generally, R1233zd / R1233zd(E) has the chemical name trans-1-chloro3,3,3-trifluoropropane-1-ene and is a refrigerant with the chemical formula CF3CH=CHCl.

[0039] Generally, R1234ze / R1234ze(E) has the chemical name trans-1,3,3,3-tetrafluoropropa-1-ene and is a refrigerant with the chemical formula CF3CF=CHF.

[0040] Generally, R1336mzz(E) has the chemical name trans-1,1,1,4,4,4-hexafluoro-2-butene. Generally, R1336mzz(Z) has the chemical name cis-1,1,1,4,4,4-hexafluoro-2-butene. In particular, R1336mzz, R1336(E) and / or R1336(Z) are refrigerants with the chemical formula CF3CH=CHCF3. In particular, R1336mzz, R1336(E) and / or R1336(Z) can have a very low global warming potential, e.g., GWP=9, and a virtually zero ozone depletion potential, e.g., ODP=0. Generally, ammonia has the chemical formula NH3 and is a fluid composed of nitrogen and hydrogen.

[0041] Generally, acetone has the chemical formula C3H6O and is 2-propanone and / or dimethyl ketone.

[0042] When a range is given in this disclosure, the values ​​that define the range itself may be included within that range. For example, a value that is set to true when a parameter is "greater than" 10 may be true if the parameter is strictly 10.1 or 10, but may be false if the parameter is 9.99.

[0043] In another preferred implementation, the first coolant has a saturation temperature, i.e., a boiling point, greater than 10°C and / or less than 80°C, and more specifically, a saturation temperature greater than 35°C and / or less than 45°C, or a saturation temperature greater than 18°C ​​and / or less than 26°C. The circuit may be designed and / or filled with a certain amount of the first coolant to achieve the saturation temperature. For example, as the pressure in the circuit increases, the boiling point generally rises, and vice versa. This, therefore, may correlate with the selection of the amount of the first coolant.

[0044] In another preferred implementation, the circuit has a cross-section of at least partially greater than 0.2 square millimeters and / or less than 5 square millimeters, in particular greater than 0.8 square millimeters and / or less than 1.5 square millimeters, in particular 1.08 square millimeters ±, e.g., ±10%. It has been empirically proven that such a cross-section functions efficiently to allow the self-oscillating heat pipe to transfer heat away from the first surface.

[0045] In another preferred embodiment, two cooling devices are provided, and the first surface is positioned between the two first surfaces, sandwiching the power semiconductor module so that it is placed on the two first surfaces.

[0046] In another preferred implementation, at least one power semiconductor element is a metal-insulator-semiconductor field-effect transistor (MISFET), a metal-oxide-semiconductor field-effect transistor (MOSFET), an insulated-gate bipolar transistor (IGBT), an integrated gate-commutated thyristor (IGCT), a gate-turn-off thyristor (GTO), a bipolar junction transistor (BJT), a junction-gate field-effect transistor (JFET), a gate-commutated thyristor (GCT), a high electron-mobility transistor (HEMT), or a diode. The power semiconductor element may be in the form of a chip. Two or more power semiconductor elements may be provided in a power semiconductor module. The power semiconductor element may be one or more of transistors and / or switching elements such as IGBTs, MOSFETs, and diodes. The power semiconductor elements can be mounted on the same substrate structure, for example, on a substrate structure. All power semiconductor elements may be of the same type, or there may be at least two different types of power semiconductor elements, such as diodes and / or transistors. When multiple power semiconductor elements are present, all power semiconductor elements may be of the same type, or different types of power semiconductor elements may be present.

[0047] The above objectives are further addressed by a system comprising one or more of the components described herein and designed to form an electrical circuit. In this system, one or more of the cooling devices can be used as conductors of the electrical circuit. The cooling elements may also serve as conductors. Alternatively or in addition, the cooling devices may be electrically isolated from the power semiconductor module by, for example, an insulating material, and the terminals are electrically connected by metallic elements, such as bars, wires, and / or solid metal pieces.

[0048] The electrical circuit may be formed as a cascaded switch, a combination of diodes and transistors, or a half-bridge. In particular, at least two of the components may be provided, where the power semiconductor module of the first component may be positioned on the high side, and the power semiconductor module of the second component may be positioned on the low side. At least one of the cooling devices provides an AC terminal by electrically connecting a low side and a high side to each other as a first conductor, and / or At least one of the cooling devices provides a DC+ terminal by being electrically connected to the high side as a second conductor, and the other of the cooling devices provides a DC- terminal by being electrically connected to the low side as a third conductor.

[0049] The above system may have a system housing configured to support and / or electrically insulate components / blocks in particular.

[0050] The above objectives are further solved by an array of at least two systems as described in any one of the four preceding claims, wherein the at least two systems are electrically connected, preferably in cascaded form, to scale up the electrical circuit in terms of nominal current, for example, the at least two systems are electrically connected in parallel. The at least two systems may be electrically connected in series, for example, to scale up voltage and / or to avoid short-circuit cases commonly known as shoot-through faults. Series connections can be made in combination with parallel connections.

[0051] The above objectives are further addressed by methods for manufacturing the constructs, systems, or arrays described herein in particular.

[0052] The above method includes providing one power semiconductor module or two or more power semiconductor modules having at least one power semiconductor element and at least two power terminals.

[0053] The above method comprises providing at least one or more cooling devices including a partially curved circuit for a first coolant, wherein the circuit is configured to form a self-excited oscillating heat pipe, the circuit being thermally coupled to a first face of the at least one cooling device and showing at least one evaporator side for evaporating the first coolant from a heat input to the first face, and at least one condenser side for condensing the first coolant, the at least one condenser side being positioned on the side away from the first face and configured to be thermally coupled to a flow path for a second coolant.

[0054] The above method preferably includes the power semiconductor module being positioned on the first surface of the at least one cooling device and / or being fastened to the at least one cooling device. The above configuration is obtained from this method. If an electrical circuit is formed, the above system is additionally obtained from this method. If two systems are provided, the above array is created, in particular on the condition that they are electrically connected.

[0055] Optionally, to provide a functional self-oscillating heat pipe, the circuit of at least one cooling device is filled with a first coolant and, in particular, subsequently closed. Optionally, an electrical circuit is formed by at least two components, and the flow paths of the cooling device are coupled to a second coolant flowing in series or in parallel through these flow paths.

[0056] The above objectives are further achieved by using the configurations described herein, wherein the at least one cooling device is used as a conductor in an electrical circuit or is electrically isolated from the power semiconductor module by, for example, an insulating material, and in particular, the second coolant is dielectric.

[0057] The second coolant may, in particular, include or consist of deionized water, glycol, ethylene glycol, oil, mineral oil, silicone oil, paraffin, and / or mixtures of water and glycol. The second coolant may further include or consist of commercially available Nytro 10x, Midel 7131, isoparaffin, and / or modified fluids.

[0058] These and other aspects of the present invention are evident from the examples described below and will be explained with reference to those examples. [Brief explanation of the drawing]

[0059] [Figure 1A] This is a perspective view of the cooling system. [Figure 1B] This is a top view of the cooling device. [Figure 1C] This is a perspective view of a cooling device with visible circuits and flow paths. [Figure 1D] This is a top view of a cooling device with visible circuits and flow paths. [Figure 2] This is a top view of a component having a power semiconductor module on the first surface of a cooling device. [Figure 3] This is a top view of another power semiconductor module for the configuration. [Figure 4] This is a perspective view of a configuration having a power semiconductor module between two first surfaces of two cooling devices. [Figure 5] This is a perspective view of a configuration having a power semiconductor module between two first surfaces of two cooling devices. [Figure 6] This is a side view of a system having two components that form an electrical circuit in the form of a half-bridge. [Figure 7A] This is a side view of a system having multiple components that form an electrical circuit (A). [Figure 7B] This is a side view of a system having multiple components that form an electrical circuit (B). [Figure 7C]This is a side view of a system having multiple components that form an electrical circuit (C). [Modes for carrying out the invention]

[0060] Explanation of implementation examples This description includes procedural or methodological aspects in describing the structural features of power semiconductor modules, and these structural features can be understood in this manner. It is emphasized to the reader that such structural features can be extracted from the context described without hesitation or without the problem of intermediate generalization to form aspects of the invention. It is also emphasized to the reader that each of the structural features described below, though potentially extracted from the context, can be understood as an individual aspect of the invention to distinguish it from known solutions.

[0061] Figures 1A to 1D show a cooling device 40 suitable for use in a configuration 1, in particular a block 1 having at least one power semiconductor element 24 and a power semiconductor module 10 having two or more power terminals 11. The cooling device 40 includes a partially bent circuit 50 for a first coolant, which is configured to form a self-oscillating heat pipe. The circuit 50 has an evaporator side 56 for evaporating the first coolant from the heat input to the first surface 42 and a condenser side 58 for condensing the first coolant. Thus, the self-oscillating heat pipe can transfer heat from the first surface 42 to the condenser side 58, in particular to a second coolant in a flow path 62 therein.

[0062] The condenser side 58 is positioned laterally away from the first surface 42 and is configured to be thermally coupled to the flow path 62 for the second coolant. In fact, in this embodiment, the condenser side 58 is thermally coupled to the flow path 62. The second coolant may be a mixture of water and glycol, or another liquid.

[0063] The power semiconductor module 10 may be placed on the first surface 42. The first surface 42 is designed to have a similar shape and / or size, for example in terms of area, to the shape of the module 10, in order to maximize heat transfer from the module 10 placed on the first surface 42.

[0064] The cooling device 40 includes a metallic material, such as aluminum, and has a surface treatment and / or coating, such as being mechanically processed and / or galvanized. The cooling device 40 forms a flow path 62. The flow path 62 has a flow path inlet 64 and a flow path outlet 66. The flow path 62 is equipped with a flow path conduit 68, which extends in parallel, connects the flow path inlet 64 and the flow path outlet 66, and is thermally coupled to the condenser side 58. The flow path conduit 68 may have a bent shape, a branched structure, or a pin-fin structure.

[0065] Here, the cooling element 41 of the cooling device 40 forms the first surface 42, the circuit 50, and the flow path 62. In particular, the cooling element 41 and / or the cooling device 40 are substantially integrated.

[0066] The flow channel conduit 68 has a cross-sectional area of ​​at least partially 9 square millimeters. Here, the flow channel conduit 68 extends substantially within and / or along a common plane. The circuit 50 includes, in particular, at least one condenser side 58, a circuit inlet 52 and a circuit outlet 54 for the first coolant. Generally, the inlet 52 and outlet 54 are sealed when filled with the first coolant, which may be in a liquid and / or gaseous state under pressure.

[0067] Circuit 50 is filled with a first coolant which is R1336mzz, for example R1336mzz(E) and / or R1336mzz(Z), or which contains these, and which is partially liquid and partially gaseous when considered at ambient temperatures in the temperature range of 35°C to 45°C. The first coolant has a saturation temperature greater than 10°C and less than 80°C.

[0068] For example, a circuit 50 that forms a partially self-excited oscillating heat pipe on the evaporator side 56, on the condenser side 58, and / or between sides 56 and 58, generally prefers to have a cross-section in the range of 0.1 square millimeters to 2.1 square millimeters, preferably 0.6 square millimeters to 1.6 square millimeters. Here, the cross-section is 1.08 square millimeters. Multiple such sections of circuit 50 may extend in series, in parallel, or in series and parallel. Generally, the cross-section can be considered in a plane perpendicular to a first plane and / or to the extension direction of circuit 50 (corresponding sections of circuit 50).

[0069] Figure 2 shows a configuration 1 comprising a power semiconductor module 10 and a cooling device 40, such as the cooling device 40 shown in Figure 1. The power semiconductor module 10 and the first surface 42 of the cooling device 40 are joined by a bonding layer 60 in the form of a solder layer.

[0070] The first surface 42, in particular, has the projected shape of the power semiconductor module 10 when viewed from above, and is, for example, rectangular in shape.

[0071] Here, the first surface 42 is flat overall and is included in the larger surface of the cooling device 40, particularly its cooling element 41.

[0072] In particular, the module 10 in Figures 2 and 3 has eight power semiconductor elements 24 in chip form and two power terminals 11. In Figures 2 and 3, the power semiconductor elements 24 are arranged laterally apart from each other and are substantially located in a common plane.

[0073] In particular, the substrate structure 12 in Figure 2 has an insulating material 16 and a metallization layer 18. The module 10 is placed on the first surface 42 of the cooling device 40 with a thermal interface material interposed between them.

[0074] In particular, the power semiconductor module 10 in Figure 3 includes a substrate structure 12 that supports the power semiconductor elements 24, and the substrate structure 12 is placed on, in particular in contact with, the first surface 42 with a thermal interface material such as a heat paste or thermal heat transfer pad interposed therebetween. In particular, the substrate structure 12 in Figure 3 has a base plate 14, an insulating material 16, and a metallization layer 18. The substrate structure 12 has a gate-runner substrate to form gate connections.

[0075] In particular, the power semiconductor module 10 in Figure 3 has a molding material 20 for packaging the power semiconductor elements 24, and the molding material 20 is part of the power semiconductor module 10.

[0076] Figure 4 shows a configuration 1 having two cooling devices 40, the first surfaces 42 of these two cooling devices 40 are positioned between the two first surfaces 42, and the power semiconductor module 10 is positioned on the two first surfaces 42, sandwiching the power semiconductor module 10. For illustrative purposes, the upper cooling device 40 is positioned at a distance from the module 10. In this case, these cooling devices 40 are identical. These cooling devices 40 can cool one module 10 from both sides. The power semiconductor module 10 is described with respect to Figure 2.

[0077] Figure 5 is similar to the content of Figure 4, and the power semiconductor module 10 is the same as that shown in Figure 3.

[0078] Each of the power semiconductor elements 24 may be a metal-insulator-semiconductor field-effect transistor (MISFET), a metal-oxide-semiconductor field-effect transistor (MOSFET), an insulated-gate bipolar transistor (IGBT), an integrated gate commutation thyristor (IGCT), a gate turn-off thyristor (GTO), and / or a diode.

[0079] Figure 6 shows a system 80 comprising two components 1 designed to form an electrical circuit 82. Four cooling devices 40 are used as conductors for the electrical circuit 82. The electrical circuit 82 is in the form of a half-bridge.

[0080] The power semiconductor module 10 of the first component 1 is positioned as the high side 84, and the power semiconductor module 10 of the second component 1 is positioned as the low side 86. One of the cooling devices 40 provides an AC terminal 88 by electrically connecting the low side 86 and the high side 84 to each other as the first conductor.

[0081] One of the cooling devices 40 provides a DC+ terminal 90 by being electrically connected to the high side 84 as a second conductor, and the other of the cooling devices 40 provides a DC- terminal 92 by being electrically connected to the low side 86 as a third conductor.

[0082] A system housing 81 is provided to support the component 1 and to electrically insulate the component 1.

[0083] Each of Figures 7A to 7C shows an array of at least two systems 80 of the system 80 of Figure 6. The systems 80 are electrically connected to scale up the electrical circuit 82 in terms of nominal current, and are in particular cascaded, for example, at least two systems 80 are electrically connected in parallel. For example, Figure 7A has three systems 80 in parallel, Figure 7B has four systems 80 in parallel, and Figure 7C has five systems 80 in parallel. Thus, the nominal current expands from A to C.

[0084] In Figures 7A to 7C, the substrate structure 12 has a gate-runner substrate to form a gate connection 94.

[0085] Figures 7A to 7C show an example of the use of component 1, in which the cooling device 40 is used as a conductor in the electrical circuit 82 or is electrically isolated from the power semiconductor module 10. [Explanation of symbols]

[0086] 1 Component, 10 Power semiconductor module, 11 Power terminal, 12 Substrate structure, 14 Base plate, 16 Insulating material, 18 Metallization layer, 20 Molding material, 24 Power semiconductor element, 40 Cooling device, 41 Cooling element, 42 First surface, 50 Circuit for first coolant (PHP), 52 Circuit inlet, 54 Circuit outlet, 56 Evaporator side, 58 Condenser side, 60 Bonding layer, 62 Flow path for second coolant (chiller), 64 Flow path inlet, 66 Flow path outlet, 68 Flow path conduit, 80 System, 81 System housing, 82 Electrical circuit, 84 High side, 86 Low side, 88 AC terminal, 90 DC+ terminal, 92 DC- terminal, 94 Gate connection.

Claims

1. Component (1), A power semiconductor module (10) having at least one power semiconductor element (24) and at least two power terminals (11), The system comprises at least one cooling device (40) including a partially curved circuit (50) for a first coolant, the circuit (50) configured to form a self-excited oscillating heat pipe, the circuit (50) having at least one evaporator side (56) for evaporating the first coolant from a heat input to the first surface (42) and at least one condenser side (58) for condensing the first coolant, the at least one condenser side (58) being positioned on the side away from the first surface (42) and configured to be thermally coupled to a flow path (62) for a second coolant. The power semiconductor module (10) is a component (1) arranged on the first surface (42).

2. The power semiconductor module (10), in particular the at least one power semiconductor element (24), is in contact with the first surface (42) with or without a thermal interface material such as a heat paste or thermal heat transfer pad interposed therebenea, according to any one of the preceding claims.

3. The power semiconductor module (10) includes a substrate structure (12) supporting the at least one power semiconductor element (24), wherein the substrate structure (12) is disposed on the first surface (42) with or without a thermal interface material such as a heat paste or thermal heat transfer pad interposed therebetween, the configuration (1) according to any one of the preceding claims.

4. The substrate structure (12) is the component (1) according to any one of the preceding claims, comprising a base plate (14), an insulating material (16), and / or a metallization layer (18).

5. The substrate structure (12) preferably has a gate-runner substrate for forming a gate connection (94) by wire bonding, soldering, sintering, or spring contact, and preferably has a spacer, according to any one of the preceding claims.

6. The construct (1) according to any one of the preceding claims, comprising a molding material (20), preferably a molding polymer material, in particular a thermosetting epoxy molding compound and / or a thermoplastic compound, for packaging the at least one power semiconductor element (24), wherein the molding material (20) is part of the power semiconductor module (10).

7. The component (1) according to any one of the preceding claims, wherein the at least one cooling device (40), particularly the first surface (42), includes or is composed of a metallic material, preferably the metallic material includes a metallic alloy with copper, aluminum and / or molybdenum.

8. The component (1) according to any one of the preceding claims, wherein the at least one cooling device (40), in particular the first surface (42), has a surface treatment, in particular being mechanically processed, galvanized, metallic plated, and / or brazed.

9. The power semiconductor module (10) and the first surface (42) are joined by a bonding layer (60) by eutectic bonding and / or laser welding, according to any one of the preceding claims (1).

10. The assembly (1) according to the preceding claim, wherein the bonding layer (60) includes a solder layer based particularly on SnAg, SnSb, SAC, and / or a sintered layer based particularly on Cu particles and / or Ag particles.

11. The flow path (62) is formed by the cooling device (40) and comprises a flow path inlet (64) and a flow path outlet (66), the configuration (1) according to any one of the preceding claims.

12. The configuration (1) according to the preceding claim, wherein the flow path (62) comprises at least partially a flow path conduit (68), the flow path conduit (68) extending in parallel, connecting the flow path inlet (64) and the flow path outlet (66), and is thermally coupled to the at least one condenser side (58).

13. The configuration (1) according to any one of the two preceding claims, wherein the flow path (62) comprises at least partially a flow path conduit (68), the flow path conduit (68) extending in a bent shape, connecting the flow path inlet (64) and the flow path outlet (66), and is thermally coupled to the at least one condenser side (58).

14. The configuration (1) according to any one of the preceding three claims, wherein the flow path (62) comprises at least partially a flow path conduit (68), the flow path conduit (68) having a branching structure and / or a pin fin structure, connecting the flow path inlet (64) and the flow path outlet (66), and is thermally coupled to the at least one condenser side (58).

15. The component (1) according to any one of the preceding claims, wherein the cooling element (41) of the cooling device (40) forms the first surface (42), the circuit (50), and the flow path (62).

16. A component (1) according to any one of the preceding claims, wherein the flow channel conduit (68) has at least partially a cross-sectional area greater than 1 square millimeter and / or less than 100 square millimeters, in particular a cross-sectional area greater than 4 square millimeters and / or less than 14 square millimeters, in particular a cross-sectional area of ​​9 square millimeters.

17. The circuit (50) comprises, in particular, a circuit inlet (52) and / or circuit outlet (54) for the first coolant on at least one condenser side (58), the configuration (1) according to any one of the preceding claims.

18. The circuit (50) is partially or entirely filled with the first coolant, the first coolant being any one of R134A, R1234yf, R1233zd, R1234ze, R1336mzz, ammonia, water, or acetone, or a mixture thereof, in particular the first coolant being partially liquid and partially gaseous when considered at an ambient temperature in a temperature range greater than 10°C and / or less than 80°C, in particular the temperature range being greater than 35°C and / or less than 45°C, or the temperature range being greater than 18°C ​​and / or less than 26°C, according to any one of the preceding claims, component (1).

19. The first coolant has a saturation temperature greater than 10°C and / or less than 80°C, and in particular, the saturation temperature is greater than 35°C and / or less than 45°C, or the saturation temperature is greater than 18°C ​​and / or less than 26°C, according to any one of the preceding claims (1).

20. The circuit (50) has a cross-section of at least partially more than 0.2 square millimeters and / or less than 5 square millimeters, in particular the cross-section of more than 0.8 square millimeters and / or less than 1.5 square millimeters, in particular the cross-section of 1.08 square millimeters, according to any one of the preceding claims (1).

21. The configuration (1) according to any one of the preceding claims, comprising two cooling devices (40), wherein the first surface (42) is positioned between the two first surfaces (42) and sandwiches the power semiconductor module (10) so as to place the power semiconductor module (10) on the two first surfaces (42).

22. The at least one power semiconductor element (24) is a metal-insulator-semiconductor field-effect transistor (abbreviated as MISFET), a metal-oxide-semiconductor field-effect transistor (abbreviated as MOSFET), an insulated-gate bipolar transistor (abbreviated as IGBT), an integrated gate commutation thyristor (abbreviated as IGCT), a gate turn-off thyristor (abbreviated as GTO), or a diode, according to any one of the preceding claims (1).

23. A system (80) comprising one or more of the components (1) described in any one of the preceding claims, designed to form an electrical circuit (82), One of the cooling devices (40) is used as a conductor of the electrical circuit (82), or The cooling device (40) is electrically insulated from the power semiconductor module (10) by, for example, an insulating material (16), and the terminals (11) are electrically connected by metal elements, such as bars, wires and / or solid metal pieces, in a system (80).

24. The electrical circuit (82) is formed as a cascaded switch, a combination of diodes and transistors, or a half-bridge, according to the system (80) of the preceding claim.

25. The system comprises at least two of the aforementioned components (1), wherein the power semiconductor module (10) of the first component (1) is arranged as the high side (84), and the power semiconductor module (10) of the second component (1) is arranged as the low side (86). At least one of the cooling devices (40) provides an AC terminal (88) by electrically connecting the low side (86) and the high side (84) to each other as a first conductor, and / or The system (80) according to the preceding claim, wherein at least one of the cooling devices (40) provides a DC+ terminal (90) by being electrically connected to the high side (84) as a second conductor, and the other of the cooling devices (40) provides a DC- terminal (92) by being electrically connected to the low side (86) as a third conductor.

26. The system (80) according to any one of the four preceding claims, further comprising a system housing (81) for supporting and / or electrically insulating the constituent / block (1).

27. An array of at least two systems (80) according to any one of the four preceding claims, wherein the at least two systems (80) are electrically connected, preferably in cascaded order, to scale up the electrical circuit (82) in terms of nominal current and / or nominal voltage, for example, the at least two systems (80) are electrically connected in parallel and / or series.

29. A method for manufacturing a component (1) according to any one of claims 1 to 22, or a system (80) according to any one of claims 23 to 26, or an array according to claim 27, A power semiconductor module (10) or two or more power semiconductor modules (10) are provided, each having at least one power semiconductor element (24) and at least two power terminals (11). A cooling device is provided which includes at least one cooling device (40) or two or more cooling devices (40) including a partially curved circuit (50) for a first coolant, wherein the circuit (50) is configured to form a self-excited oscillating heat pipe, and the circuit (50) shows at least one evaporator side (56) for evaporating the first coolant from a heat input to the first surface (42) and at least one condenser side (58) for condensing the first coolant, wherein the at least one condenser side (58) is positioned on the side away from the first surface (42) and is configured to be thermally coupled to a flow path (62) for a second coolant. The power semiconductor module (10) is positioned on the first surface (42) of the at least one cooling device (40) and / or fastened to the at least one cooling device (40).

30. The method according to the preceding claim, wherein the circuit (50) of the at least one cooling device (40) is filled with the first coolant.

31. The method according to any one of the two preceding claims, wherein an electrical circuit (82) is formed by at least two components (1), and the flow path (62) of the cooling device (40) is connected.

32. Use of the component (1) according to any one of claims 1 to 22, wherein the at least one cooling device (40) is used as a conductor in an electrical circuit (82) or is electrically insulated from the power semiconductor module (10) by, for example, an insulating material (16), and in particular the second coolant is dielectric, and in particular the second coolant comprises deionized water, glycol, oil, mineral oil, silicone oil and / or paraffin.

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