Silicon manufacturing method and system
The described system addresses the challenges of hydrogen plasma production in vacuum electric arc furnaces by using a reaction chamber with hydrogen shrouding and inert gas jacketing to control temperature and flow dynamics, achieving efficient and low-emission high-purity silicon production.
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- GREEN 14 AB
- Filing Date
- 2024-05-02
- Publication Date
- 2026-06-23
AI Technical Summary
Existing methods for producing high-purity silicon using hydrogen plasma face challenges such as side reactions, re-oxidation, and energy inefficiency, particularly in vacuum electric arc furnaces, which hinder the transition from carbon-based reducing agents to hydrogen plasma.
A system comprising a reaction chamber, expansion chamber, and plasma generator with a Draval nozzle that uses hydrogen shrouding and inert gas jacketing to control temperature and flow dynamics, enabling SiO2 reduction in flight and direct deposition onto molten silicon, while utilizing excess hydrogen to suppress re-oxidation and side reactions.
This approach achieves high-purity silicon production with reduced emissions and energy consumption by minimizing re-oxidation and side reactions, allowing for integrated reduction and purification during molten silicon processing.
Smart Images
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