X-ray measurement system and integrated semiconductor inspection system

Abstract

To provide an X-ray measurement system and a combined semiconductor inspection system that solves the problem of an anode being damaged by an electron beam and affecting X-ray flux. [Solution] The X-ray metrology system 1 includes a multi-axis sample stage 10, an X-ray generator 12, an X-ray optical element group 14, an X-ray detector 16, and a processing device 18. The X-ray generator includes an electron beam generator 120, an electromagnetic lens group 122, an X-ray target material 124, and a vacuum chamber 126. The X-ray target material receives a focused incident electron beam and generates a measurement X-ray beam. The X-ray target material includes a heat dissipation substrate and multiple excitation target materials embedded and dispersed in the heat dissipation substrate. The X-ray optical element group guides the measurement X-ray beam to the test sample. The X-ray detector receives the X-ray test signal and generates X-ray spectrum information. The processing device performs a fitting analysis process to obtain structural parameters of the test sample.

Description

[Technical Field]

[0001] The present invention relates to metrology and inspection systems, and more particularly to X-ray metrology systems and integrated semiconductor inspection systems. [Background technology]

[0002] X-ray generation begins with a conventional X-ray tube, the basic combination of which requires a cathode and an anode target material. The cathode produces a high-voltage electron beam that strikes the anode. Depending on the elemental composition, the atoms within the anode are excited by energy and transition from higher to lower energy levels, releasing energy that is emitted in the form of X-rays.

[0003] The most notable drawback of prior art X-ray tubes is the design and development of solid anodes, because typical solid anodes are formed by thin film deposition and then bombarded by high voltage electron beams for long periods of time, making the anode target material susceptible to localized to widespread damage, which obviously affects the generated X-ray flux.

[0004] To address this technical challenge, current technologies have developed rotating anode and liquid-metal jet targets, but they still have corresponding drawbacks. Rotating anode targets utilize the change in the position at which the electron beam impinges on the target, extending the target's life and improving X-ray flux. However, changing the target's position requires recalibration of the X-ray path, which also complicates the design of the mechanism. On the other hand, liquid-metal jet targets utilize the flow properties of liquid metal to improve X-ray flux, but require periodic replacement or replenishment of the liquid metal, resulting in high consumption of consumables and high costs. Summary of the Invention [Problem to be solved by the invention]

[0005] The technical problem to be solved by the present invention is to provide an X-ray measurement system and a combined semiconductor inspection system that can effectively solve the problem of the anode being damaged by the electron beam and affecting the X-ray flux, in response to the shortcomings of the prior art. [Means for solving the problem]

[0006] To solve the above technical problems, one technical solution adopted by the present invention is to provide an X-ray measurement system including a multi-axis sample stage, an X-ray generator, an X-ray optical element group, an X-ray detector, and a processing device. The multi-axis sample stage carries a test sample. The X-ray generator includes an electron beam generator, an electromagnetic lens group, an X-ray target material, and a vacuum chamber. The electron beam generator generates an incident electron beam. The electromagnetic lens group focuses the incident electron beam. The X-ray target material is disposed on a target material actuator. The X-ray target material receives the focused incident electron beam at an incident angle and generates a measurement X-ray beam. Here, the X-ray target material includes a heat dissipation substrate and multiple excitation target materials embedded and dispersed in the heat dissipation substrate. The vacuum chamber houses the electron beam generator, the electromagnetic lens group, the target material actuator, and the X-ray target material. The vacuum chamber has a window through which the measurement X-ray beam passes. The X-ray optical element group guides the measurement X-ray beam to the test sample. The X-ray detector receives an X-ray test signal generated by irradiating the test sample with the measurement X-ray beam and generates X-ray spectrum information corresponding to the X-ray test signal. The processing device is configured to output a measurement result of the test sample based on the X-ray spectrum information.

[0007] Another technical solution adopted by the present invention to solve the above technical problems is to provide an integrated semiconductor inspection system including a multi-axis sample stage, at least two X-ray measurement subsystems, and a processing device. The multi-axis sample stage supports a test sample. Each of the at least two X-ray measurement subsystems includes an X-ray generator, an X-ray optical element group, and an X-ray detector. The X-ray generator includes an electron beam generator, an electromagnetic lens group, an X-ray target, and a vacuum chamber. The electron beam generator generates an incident electron beam. The electromagnetic lens group focuses the incident electron beam and simultaneously controls the focusing position of the incident electron beam. The X-ray target is disposed on a target actuator. The X-ray target receives the focused incident electron beam at an incident angle and generates a measurement X-ray beam. Here, the X-ray target includes a heat dissipation substrate and a plurality of excitation target materials dispersedly embedded in the heat dissipation substrate. The vacuum chamber accommodates the electron beam generator, the electromagnetic lens group, the target actuator, and the X-ray target. The vacuum chamber has a window through which the measurement X-ray beam passes. The X-ray optical element group guides the measurement X-ray beam to the test sample. The X-ray detector receives an X-ray test signal generated by irradiating the test sample with the measurement X-ray beam and generates X-ray spectrum information corresponding to the X-ray test signal. The processing device is configured to output a measurement result of the test sample based on the X-ray spectrum information generated by the at least two X-ray measurement subsystems.

[0008] To solve the above technical problems, the present invention provides a combined semiconductor inspection system including a multi-axis sample stage, an optical metrology subsystem, an X-ray metrology subsystem, and a processing device. The multi-axis sample stage supports a test sample. The optical metrology subsystem includes a light source generator, an incident optical element group, a receiving optical element group, and an optical receiver. The light source generator generates a measurement light beam having a wavelength within an optical wavelength range covering at least the ultraviolet to near-infrared bands. The incident optical element group guides the measurement light beam to the test sample. The receiving optical element group receives an optical test signal generated by irradiating the test sample with the measurement light beam and generates optical spectrum information corresponding to the optical test signal. The X-ray metrology subsystem includes an X-ray generator, an X-ray optical element group, and an X-ray detector. The X-ray generator includes an electron beam generator, an electromagnetic lens group, an X-ray target material, and a vacuum chamber. The electron beam generator generates an incident electron beam. An electromagnetic lens group focuses the incident electron beam and simultaneously controls the focusing position of the incident electron beam. An X-ray target material is disposed on a target material actuator. The X-ray target material receives the focused incident electron beam at an incident angle and generates a measurement X-ray beam. Here, the X-ray target material includes a heat dissipation substrate and a plurality of excitation target materials dispersedly embedded in the heat dissipation substrate. A vacuum chamber accommodates an electron beam generator, an electromagnetic lens group, a target material actuator, and the X-ray target material. The vacuum chamber has a window through which the measurement X-ray beam passes. An X-ray optical element group guides the measurement X-ray beam to the test sample. An X-ray detector receives an X-ray test signal generated by irradiating the test sample with the measurement X-ray beam and generates X-ray spectrum information corresponding to the X-ray test signal. The X-ray optical element group guides the measurement X-ray beam to the test sample. A processing device is configured to output a measurement result of the test sample based on the optical spectrum information and the X-ray spectrum information.

[0009] In order to further understand the features and technical contents of the present invention, please refer to the following detailed description of the present invention and the drawings, but the drawings provided are for reference and illustration purposes only and are not used to limit the present invention. [Brief explanation of the drawings]

[0010] [Figure 1] 1 is a functional block diagram of an X-ray measurement system according to a first embodiment of the present invention; [Figure 2] 1 is a schematic diagram of the system configuration of an X-ray measurement system according to a first embodiment of the present invention; [Figure 3] 1 is a schematic diagram of the configuration of an X-ray generator according to a first embodiment of the present invention; [Figure 4] 1 is a first plan view of an X-ray target material according to a first embodiment of the present invention; [Figure 5] 2 is a first cross-sectional view of the X-ray target material according to the first embodiment of the present invention, taken along the cross-sectional line II. FIG. [Figure 6] FIG. 2 is a second plan view of the X-ray target material according to the first embodiment of the present invention. [Figure 7] FIG. 2 is a second cross-sectional view of the X-ray target material according to the first embodiment of the present invention taken along the cross-sectional line II-II. [Figure 8] FIG. 2 is a third plan view of the X-ray target material according to the first embodiment of the present invention. [Figure 9] FIG. 3 is a third cross-sectional view of the X-ray target material according to the first embodiment of the present invention taken along the cross-sectional line III-III. [Figure 10] FIG. 4 is a fourth plan view of the X-ray target material according to the first embodiment of the present invention. [Figure 11] FIG. 4 is a fourth cross-sectional view of the X-ray target material according to the first embodiment of the present invention taken along the cross-sectional line IV-IV. [Figure 12] FIG. 2 is a functional block diagram of an integrated semiconductor testing system according to a second embodiment of the present invention; [Figure 13] 2 is a schematic diagram of a first operating mode of an integrated semiconductor testing system according to a second embodiment of the present invention; [Figure 14]10 is a schematic diagram of a second operating mode of the integrated semiconductor testing system according to the second embodiment of the present invention; [Figure 15] 10 is a schematic diagram of a third operating mode of the integrated semiconductor testing system according to the second embodiment of the present invention; [Figure 16] FIG. 10 is a functional block diagram of an integrated semiconductor testing system according to a third embodiment of the present invention. [Figure 17] 10 is a plan view of the measurement structure of an integrated semiconductor testing system according to a third embodiment of the present invention; DETAILED DESCRIPTION OF THE INVENTION

[0011] The following describes the embodiments of the "X-ray measurement system and integrated semiconductor inspection system" disclosed in the present invention through specific examples. Those skilled in the art can understand the advantages and effects of the present invention from the disclosed content. The present invention can be implemented or applied through other different specific embodiments, and various detailed descriptions herein can be modified and changed in various ways based on different perspectives and applications without departing from the spirit of the present invention. It should be noted that the drawings of the present invention are merely schematic and are not drawn to actual scale. The following embodiments will further explain the technical content of the present invention, but the disclosed content is not intended to limit the scope of protection of the present invention. Furthermore, the term "or" in this specification should be understood to include any one or more combinations of the relevant listed items according to actual circumstances. (First Example)

[0012] 1 is a functional block diagram of an X-ray measurement system according to a first embodiment of the present invention, and FIG. 2 is a schematic diagram of the system configuration of the X-ray measurement system according to the first embodiment of the present invention.

[0013] As shown in Figures 1 and 2, a first embodiment of the present invention provides an X-ray measurement system 1 including a multi-axis sample stage 10, an X-ray generator 12, an X-ray optical element group 14, an X-ray detector 16, and a processing device 18.

[0014] The multi-axis sample stage 10 is a multi-axis movable stage for supporting the test sample SP, such as a three-axis tilt stage or a ball-and-socket tilt stage. The multi-axis sample stage 10 may have a stage movement mechanism and a stage rotation mechanism. The stage movement mechanism may include, for example, stepping motors corresponding to three axes to move the test sample SP along one or more of the X-axis, Y-axis, and Z-axis. By controlling the stepping motors for each axis, the test sample SP can be accurately moved to various positions. In the case of a ball-and-socket tilt stage, for example, the stage rotation mechanism may be, for example, a ball-and-socket joint connected to the stage portion, and can rotate the test sample SP around one or more of the X-axis, Y-axis, and Z-axis. Specifically, the rotation mechanism of the multi-axis sample stage 10 includes controlling the azimuth angle θ of rotation around the Y-axis and the azimuth angle Φ of rotation around the Z-axis, thereby enabling the test sample SP to be scanned in all directions.

[0015] In the embodiments of the present invention, the test sample SP may be a wafer, a photomask, a photomask film, or a semiconductor device having a multilayer film, such as a metal-oxide-semiconductor field-effect transistor (MOSFET), a planar MOSFET, a complementary field-effect transistor (CFET), a fin field-effect transistor (FinFET), a gate-all-around field-effect transistor (GAAFET), a high-electron-mobility transistor (HEMT), a heterojunction field-effect transistor (HFET), a dual-gate MOSFET (DG-MOSFET), a fast-recovery epitaxial diode field-effect transistor (FREDFET), etc.

[0016] 3 is a schematic diagram of an X-ray generator according to a first embodiment of the present invention. As shown in FIG. 3, the X-ray generator 12 includes an electron beam generator 120, an electromagnetic lens group 122, an X-ray target 124, and a vacuum chamber 126.

[0017] The vacuum chamber 126 has a storage space for the electron beam generator 120, the electromagnetic lens group 122, the target material actuator 123, and the X-ray target material 124. The vacuum chamber 126 has a window 1260 through which the measurement X-ray beam passes. The vacuum chamber 126 is a chamber that can withstand high vacuum, providing a sealed space isolated from the outside, and is equipped with vacuum pumps 1262 (e.g., one or more) to maintain the vacuum chamber 126 at a vacuum level of 10-7 torr or higher, providing an environment suitable for the presence of the electron beam. The X-ray exit window is used to allow X-rays to pass through the vacuum chamber without being absorbed by the vacuum chamber. The electron beam generator 120 may, for example, include one or more cathode electron guns for generating an incident electron beam EB and colliding it with the X-ray target material 124 to excite X-rays. The electromagnetic lens group 122 may include one or more electromagnetic lenses for focusing the incident electron beam EB onto the X-ray target material 124 and for controlling the shape and focal position of the incident electron beam EB when it irradiates the X-ray target material 124.

[0018] Meanwhile, the X-ray target material 124 may be disposed on a target material actuator 123. The X-ray target material 124 receives the focused incident electron beam EB at a specific incident angle θi to generate a measurement X-ray beam Lx. The target material actuator 123 is a device similar to the multi-axis sample stage 10 and can rotate the X-ray target material 124 around one or more specific reference axes among the X-axis, Y-axis, and Z-axis. The X-ray target material 124 may be made of copper, molybdenum, cobalt, or high entropy alloy materials (HEAM). The high entropy alloy materials may include, for example, one or more of CuZnMnAl, AlCrTiTaZr, AlCoCrFeNiTi, AlCoCrFeNi, AlFeCrNiMo, etc. By selecting different target materials, measurement X-ray beams Lx with different energies or different wavelengths (or frequencies) may be generated.

[0019] FIG. 4 is a first plan view of an X-ray target material according to a first embodiment of the present invention. FIG. 5 is a first cross-sectional view of the X-ray target material according to the first embodiment of the present invention, taken along section line II. As shown in FIGS. 4 and 5, in this embodiment, the X-ray target material 124 functions as an anode and includes a heat dissipation substrate 1240 and a plurality of excitation target materials 1242 embedded and dispersed in the heat dissipation substrate 1240. The heat dissipation substrate 1240 may be, for example, a plate-like body, and may be, for example, a circular plate-like body when viewed from above. These excitation target materials 1242 are a plurality of rings arranged in order from the inside to the outside around the center C1 of the plate-like body.

[0020] More specifically, the heat dissipation substrate 1240 may be, for example, a plate-like body having a plurality of grooves, and the excitation target materials 1242 may be arranged concentrically in the grooves, i.e., embedded in the heat dissipation substrate 1240. As can be seen from the cross-sectional view ( FIG. 5 ), the ring-shaped body formed by each excitation target material 1242 has a rectangular cross section, and each ring-shaped body has a light-receiving surface Sr that is not in contact with the plate-shaped body (heat dissipation substrate 1240). Therefore, compared to conventional X-ray target material structures, the contact area between the excitation target material 1242 and the heat dissipation substrate 1240 can be increased, allowing the X-ray target material 1242 to withstand an incident electron beam EB with a higher flux, thereby improving the intensity of the generated incident X-rays Lx. In some embodiments, the heat dissipation substrate 1240 may comprise a material with high thermal conductivity, such as diamond, graphite, graphene, silicon carbide, or boron nitride.

[0021] Meanwhile, the X-ray target material 124 may be excited by the incident electron beam EB in various ways. For example, as shown in Fig. 5, by adjusting the incident angle θi so that the X-ray target material 124 is tilted with respect to the incident electron beam EB, the line focus principle can be realized, and at the same time, repeated absorption of X-rays can be reduced, a heat dissipation effect can be achieved, and the radiation size of the X-rays can be controlled to a desired size.

[0022] 4, when the X-ray target material 124 receives the focused incident electron beam EB to generate the measurement X-ray beam Lx, the target material actuator 123 may rotate the X-ray target material 124 so that the incident position of the incident electron beam EB irradiated onto the X-ray target material 124 changes over time. For example, by rotating the X-ray target material 124 clockwise or counterclockwise around the center C1 along the rotation direction Dr by the target material actuator 123 and simultaneously causing the incident electron beam EB to impinge on the same point, a stable measurement X-ray beam Lx may be generated and the excited target material 1242 and the heat dissipation substrate 1240 that are not irradiated by the incident electron beam EB may be heat-dissipated.

[0023] Furthermore, each ring formed by each excitation target material 1242 has a width W1 in the radial direction of the circular plate, and the width W1 may be the same or different. Here, having the same width W1 has the advantage of simplifying the manufacturing process. Meanwhile, in order to standardize the life of the excitation target materials, the width W1 of each ring is designed according to the electron beam shape at the time of incidence of the incident electron beam EB. This allows the inner and outer rings to have the same irradiation area when irradiated with the incident electron beam EB, and prevents a situation in which the life of the inner or outer ring is shortened and the entire X-ray target material 124 needs to be replaced.

[0024] FIG. 6 is a second plan view of an X-ray target material according to a first embodiment of the present invention. FIG. 7 is a second cross-sectional view of the X-ray target material according to the first embodiment of the present invention taken along the line II-II. As shown in FIGS. 6 and 7, the first embodiment of the present invention provides another X-ray target material 124'. Similar to FIGS. 4 and 5, excitation target materials 1242' are embedded and dispersed in a heat dissipation substrate 1240'. The heat dissipation substrate 1240' may be, for example, a circular plate. These excitation target materials 1242' are a plurality of rings arranged in order from the inside to the outside around the center C2 of the plate. Unlike FIGS. 4 and 5, each ring has a triangular cross section. The triangular cross section is, for example, a right triangle, with a hypotenuse corresponding to the light-receiving surface Sr. The hypotenuse is inclined at a predetermined angle θ1 with respect to the first surface S1 of the plate, and the predetermined angles θ1 of the rings are different from each other. For example, the predetermined angles θ1 of the rings gradually increase from the center C2 of the plate toward the outside. In some embodiments, the step change range of the predetermined angle θ1 may be from 30 degrees to 45 degrees, but the present invention is not limited thereto.

[0025] Specifically, the predetermined angle θ1 is a tilt angle caused by the shape of the excitation target material 1242′. This design reduces the intensity attenuation of the measurement X-rays Lx generated by the multiple excitation targets 1242′ at a specific incident angle θi, thereby controlling the intensity of the measurement X-rays Lx to be high at a specific angle. Because the light-receiving surfaces Sr of the ring-shaped excitation targets 1242′ are at different angles relative to the first surface S1, the maximum intensity measurement X-rays Lx that can be generated by each excitation target material 1242′ correspond to different angles. The design allows the strong measurement X-rays Lx generated by each excitation target material 1242′ to be focused at the same point. Furthermore, the predetermined angle θ1 must gradually change from the center to the outside, and the angular range of the predetermined angle θ1 must be greater than 0 degrees.

[0026] Therefore, since a plurality of excitation targets 1242' are embedded in the heat dissipation substrate 1240' in a dispersed manner, the contact area between the excitation targets 1242' and the heat dissipation substrate 1240' is increased, thereby improving the heat dissipation effect, and by designing a specific angle, the strong measurement X-rays Lx can be focused at the same point, achieving an effect similar to focusing. The X-ray target 124' similar to those shown in Figures 4, 6, and 7 can also be rotated by the target actuator 123, which changes the incident position of the incident electron beam EB irradiated on the X-ray target 124' over time, further improving the heat dissipation effect.

[0027] FIG. 8 is a third plan view of the X-ray target material according to the first embodiment of the present invention. FIG. 9 is a third cross-sectional view of the X-ray target material according to the first embodiment of the present invention taken along the cross-sectional line III-III. As shown in FIGS. 8 and 9, the first embodiment of the present invention provides another X-ray target material 124″. Similar to FIGS. 4 and 5, excitation target materials 1242″ are embedded and dispersed in a heat dissipation substrate 1240″. These excitation target materials 1242″ are a plurality of rings arranged in order from the inside to the outside around the center of a plate. From a plan view, the heat dissipation substrate 1240″ may be, for example, a circular plate. However, from a side view, unlike FIGS. 4 and 5, the circular plate is essentially a bowl-shaped plate. The rings formed by the excitation target materials 1242″ are all arranged around the bottom center C3 of the bowl-shaped plate, and each ring has a light-receiving surface Sr″ that is not in contact with the bowl-shaped plate.

[0028] Because the heat dissipation substrate 1240″ is a bowl-shaped plate, the light-receiving surface Sr″ of the excitation target material 1242″ can be changed according to the shape of the heat dissipation substrate 1240″, and the angle of the light-receiving surface Sr″ with respect to the incident electron beam EB varies. This arrangement method is similar to the design shown in FIGS. 6 and 7 in which the angle is changed in stages. Therefore, similarly, the arrangement position of the excitation target material 1242″ can be designed to adjust the angle of each light-receiving surface Sr″ with respect to the incident electron beam EB, thereby achieving control so that the measurement X-rays Lx have high intensity in a specific direction.

[0029] Figure 10 is a fourth plan view of the X-ray target material according to the first embodiment of the present invention. Figure 11 is a fourth cross-sectional view of the X-ray target material according to the first embodiment of the present invention, taken along the cross-sectional line IV-IV. The heat dissipation substrate 1240''' is a plate-like body (e.g., a rectangular plate-like body), and these excitation target materials 1242''' are a plurality of blocks arranged in an array on the first surface S1 of the plate-like body, and each block has a light-receiving surface Sr''' that is not in contact with the plate-like body.

[0030] In this example, the cross-sectional area of ​​the electron beam formed by the incident electron beam EB irradiating the X-ray target material 124''' is smaller than the area of ​​the first surface of the slab. For example, the size of the incident electron beam EB impinging on the X-ray target material 124''' may be less than 50 microns by 50 microns, resulting in a smaller X-ray spot size. By dividing the excitation target material 1242''' very finely and dispersing and embedding it in the heat dissipation substrate 1240''', the contact area between the excitation target material 1242''' and the heat dissipation substrate 1240''' can be effectively increased.

[0031] As shown in FIGS. 10 and 11 , each block formed by each excitation target material 1242′″ is a hexagonal (e.g., cubic) block, spaced apart from each other by a vertical distance Sv and a horizontal distance Sh in a plan view, with each block having a width Wv and a width Wh in the vertical and horizontal directions, respectively. In a specific embodiment, each block is a rectangle having the same length and width in a plan view, i.e., Wv = Wh. The vertical distance Sv and the horizontal distance Sh may be, for example, half the length and width of the target material, i.e., Sv = ½ Wv and Sh = ½ Wh. Under this condition, the cumulative total contact area between all of the excitation target materials 1242′″ and the heat dissipation substrate 1240′″ can be increased by more than one time compared to the excitation target materials 1242′″ in a non-dispersed arrangement, thereby effectively improving the heat dissipation effect and allowing the X-ray target material 124′″ to withstand a higher flux of the incident electron beam EB. Similarly, by adjusting the incident angle θi so that the X-ray target material 124 is tilted with respect to the incident electron beam EB, the line focus principle can be realized, while at the same time reducing repeated absorption of X-rays, realizing a heat dissipation effect, and controlling the radiation size of the X-rays to a desired size.

[0032] It should be noted that the diameter of the incident electron beam EB is preferably larger than the side lengths (i.e., widths Wv and Wh) of the blocks formed by each excited target material 1242'''. For example, it may be 10, 20, 30, or 50 times the widths Wv and Wh. On the other hand, the widths Wv and Wh may be equal to or larger than the vertical distance Sv and horizontal distance Sh, respectively, and for example, the ratio of the vertical distance Sv / horizontal distance Sh to the widths Wv / width Wh may be 1:1, 1:0.5, 1:0.2, or 1:0.1.

[0033] Returning to FIGS. 1 and 2 , the X-ray optical element group 14 guides the measurement X-ray beam Lx to the test sample SP. The X-ray optical element group 14 may include one or more X-ray optical elements. For example, the X-ray optical element group 14 may include an X-ray mirror group, an X-ray slit, and an X-ray optical collimator, which are sequentially arranged between the X-ray generator 12 and the test sample SP. The X-ray mirror group may have a multilayer film structure for focusing the measurement X-ray beam Lx in the horizontal and vertical directions. The X-ray slit may be used to control the flux of the measurement X-ray beam Lx incident on the test sample SP and may also be used to control the vertical divergence angle. The measurement X-ray beam Lx is primarily used in X-ray analysis techniques and is a radiation beam having a wavelength range greater than 0.1 nanometers, such as a hard X-ray beam, a soft X-ray beam, or a gamma-ray beam.

[0034] When the measurement X-ray beam Lx is irradiated onto the test sample SP, an X-ray test signal Lx' is generated by reflection, diffraction, scattering, or transmission according to different angles of incidence. By arranging the X-ray detector 16 at an appropriate position, it is possible to receive the X-ray test signal Lx' generated by reflection, diffraction, scattering, or transmission and generate corresponding X-ray spectrum information. The X-ray detector 16 may be a one- or more-dimensional high spatial resolution detector and can receive a signal for the X-ray test signal Lx' with energy exceeding 1 keV.

[0035] In the measurement process, the processing device 18 may control the multi-axis sample stage 10 to move and / or rotate so that the X-ray detector 16 receives a plurality of X-ray test signals Lx′ generated at a plurality of X-ray measurement angles and generates a plurality of X-ray spectrum information corresponding to these X-ray test signals Lx′.

[0036] Furthermore, the X-ray generator 12 and the X-ray detector 16 (together with the X-ray generator 12 and the X-ray detector 16) are disposed on an X-ray rotation mechanism 11. The X-ray rotation mechanism 11 may include one or more robot arms connected to the X-ray generator 12 and the X-ray detector 16. Each robot arm may have degrees of freedom in multiple directions. Therefore, the X-ray generator 12 and the X-ray detector 16 can rotate around the test sample SP simultaneously or separately. In this configuration, the processing device 18 can control the movement and / or rotation of the multi-axis sample stage 10 while also controlling the rotation of the X-ray rotation mechanism 11. As a result, the X-ray generator 12 emits measurement X-ray beams Lx in multiple directions, and the X-ray detector 16 receives multiple generated X-ray test signals Lx' from multiple X-ray measurement angles and generates corresponding multiple pieces of X-ray spectrum information.

[0037] The processing device 18 may be, for example, a computer system including a processor and a memory, and may be configured to control the multi-axis sample stage 10 and the controllable elements of the X-ray metrology system 1 by executing a stored instruction set or program code. Furthermore, the processing device 18 may be configured to output the X-ray spectrum information as a measurement result of the test sample SP, or may be configured to further fit the X-ray spectrum information to obtain structural parameters of the test sample SP as a measurement result. The structural parameters include one or more of thickness, roughness, density, critical dimension, line edge roughness, refractive index, and extinction coefficient.

[0038] For example, the processing device 18 may perform fitting on the X-ray spectrum information. The X-ray spectrum information may include, for example, reflection spectra obtained by irradiating the measurement X-ray beam Lx on the test sample SP at a plurality of different incident angles. The fitting result may include structural parameters of the test sample SP (e.g., semiconductor elements such as MOSFET, planar MOSFET, CFET, FinFET, HEMT, HFET, DG-MOSFET, and FREDFET).

[0039] Specifically, the processing device 18 may perform fitting on the X-ray spectrum information to inversely reconstruct important structural parameters of the test sample SP. The X-ray spectrum information may be generated by different interaction mechanisms between the measurement X-ray beam Lx and the test sample SP. For example, the X-ray spectrum information may include X-ray reflection spectrum information, X-ray scattering spectrum information, X-ray diffraction spectrum information, and X-ray fluorescence spectrum information. By appropriately controlling the azimuth angles θ and Φ, the X-ray detector 16 collects the X-ray test signal Lx' generated by reflection, thereby obtaining the optical reflection spectrum information. Similarly, the X-ray detector 16 collects the X-ray test signal Lx' generated by scattering, diffraction, and fluorescence excitation, respectively, thereby obtaining the X-ray scattering spectrum information, X-ray diffraction spectrum information, and X-ray fluorescence spectrum information. Therefore, in the fitting analysis process, the processing device 18 may perform various X-ray analyses, including X-ray reflectivity (XRR) analysis, X-ray diffraction (XRD) analysis, small-angle X-ray scattering (SAX) analysis, and X-ray fluorescence (XRF) analysis, on the X-ray reflection spectrum information, X-ray scattering spectrum information, X-ray diffraction spectrum information, and X-ray fluorescence spectrum information, and inversely reconstruct important structural parameters of the test sample SP.

[0040] Taking XRR analysis as an example, when a measurement X-ray beam Lx is incident on a test sample SP and spectral signals within a certain angular range are received by an X-ray detector, an XRR spectrum is obtained, and structural parameters of the test sample SP can be determined through XRR analysis. For example, if the test sample SP has a multilayer structure, XRR analysis can determine the density, thickness, roughness, etc. of each layer based on the collected X-ray reflection spectrum information. On the other hand, if the test sample SP has microelements, XRR analysis can determine the orientation and size, etc. of the microelements based on the X-ray reflection spectrum. However, the present invention is not limited thereto. The above-mentioned X-ray analysis can also be used to analyze structural parameters of various types of test samples SP, such as MOSFETs, planar MOSFETs, CFETs, FinFETs, GAAFETs, HEMTs, HFETs, DG-MOSFETs, and FREDFETs. (Second Example)

[0041] Figure 12 is a functional block diagram of a combined semiconductor inspection system according to a second embodiment of the present invention. Figure 13 is a schematic diagram of a first operation mode of the combined semiconductor inspection system according to the second embodiment of the present invention. As shown in Figure 12, the second embodiment of the present invention further provides a combined semiconductor inspection system 2 including a multi-axis sample stage 20, X-ray measurement subsystems 22 and 24, and a processing device 26. In this embodiment, elements that are the same as or similar to those in the first embodiment are designated by the same element reference numerals, and redundant descriptions will be omitted.

[0042] The multi-axis sample stage 20 is similar to the multi-axis sample stage 10 of the first embodiment. The X-ray measurement subsystems 22, 24 are basically similar to the X-ray measurement system 1. The X-ray measurement subsystem 22 includes an X-ray generator 220, an X-ray optical element group 222, and an X-ray detector 224. The X-ray measurement subsystem 24 includes an X-ray generator 240, an X-ray optical element group 242, and an X-ray detector 244. The X-ray generators 220, 240 are used to generate measurement X-ray beams Lx1, Lx2, respectively. The measurement X-ray beams Lx1, Lx2 are, for example, radiation beams having a wavelength range greater than 0.1 nanometers, such as a hard X-ray beam, a soft X-ray beam, or a gamma-ray beam.

[0043] It should be noted that the X-ray generator 220 and the X-ray generator 240 have the same configuration as the X-ray generator 12 of the first embodiment, and also use an X-ray target material in which a plurality of excitation target materials are dispersed and embedded in a heat dissipation substrate as an anode, thereby improving heat dissipation efficiency. The details and advantages of the X-ray generator 220 and the X-ray generator 240 can be referred to in the first embodiment, and therefore will not be described again here.

[0044] When the measurement X-ray beams Lx1 and Lx2 are irradiated onto the test sample SP, X-ray test signals Lx1' and Lx2' are generated by reflection, diffraction, scattering, or transmission, respectively, according to different incident angles. By arranging the X-ray detectors 224 and 244 at appropriate positions, the above-mentioned X-ray test signals Lx1' and Lx2' generated by reflection, diffraction, scattering, or transmission, respectively, can be received and corresponding X-ray spectrum information can be generated.

[0045] In the first operating mode, the X-ray detectors 224, 244 may be disposed on X-ray rotation mechanisms 226, 246, respectively. The X-ray rotation mechanisms 226, 246 may each include one or more robotic arms. Each robotic arm may have multiple degrees of freedom in multiple directions. Thus, the X-ray detectors 224, 244 can rotate around the test sample SP simultaneously or separately.

[0046] In a first mode of operation, the X-ray metrology subsystems 22, 24 may be coplanar, and in this mode the X-ray generators 220, 240 may be fixed. It should be noted that the X-ray detectors 224, 244 may be changed depending on the positions of the X-ray test signals Lx1′, Lx2′ generated by the measurement X-ray beams Lx1, Lx2 incident on the test sample SP.

[0047] In some embodiments, the X-ray measurement paths formed by the X-ray measurement subsystems 22 and 24 may be perpendicular to each other to achieve anisotropic measurement requirements. For example, while the X-ray measurement subsystem 22 performs a measurement, the X-ray measurement subsystem 24 can simultaneously perform a measurement at a specific azimuthal angle Φ to achieve simultaneous measurements in different directions. In this manner, the throughput of measurement data can be significantly improved and the time required to generate X-ray spectrum information can be reduced. By controlling the X-ray measurement subsystems 22 and 24 to ensure consistent measurement conditions, it is possible to achieve isotropic measurement requirements as well.

[0048] In addition to being able to control the positions of the X-ray detectors 224, 244, the multi-axis sample stage 20 can also be changed depending on the angular range to be measured. If the angular range to be measured is from θA to θB, the X-ray metrology subsystem 22 may cover the measurement of the angular range from θA to (θA + θB) / 2, while the X-ray metrology subsystem 24 may cover the measurement of the angular range from (θA + θB) / 2 to θB. To achieve this, the multi-axis sample stage 20 must rotate through the angular range from θA to (θA + θB) / 2. By simultaneously using the X-ray metrology subsystems 22, 24 to perform measurements and further operating the multi-axis sample stage 20, the angular ranges from θA to (θA + θB) / 2 and (θA + θB) / 2 to θB can be measured simultaneously. Therefore, data can be collected over the angular range from θA to θB in half the time in the first operating mode. Furthermore, by fixing the X-ray generators 220, 240, changes in the optical path due to movement of the X-ray generators 220, 240 can be reduced, reducing the time required to recalibrate the optical path.

[0049] 14 is a schematic diagram of a second operating mode of the integrated semiconductor inspection system according to the second embodiment of the present invention. As shown in FIG. 14, in the second operating mode, the X-ray generator 220 and the X-ray detector 244 may be disposed on X-ray rotation mechanisms 226 and 246, respectively. Each of the X-ray rotation mechanisms 226 and 246 may include one or more robot arms. Each robot arm may have multiple degrees of freedom in multiple directions. Therefore, the X-ray generator 220 and the X-ray detector 224 can rotate around the test sample SP simultaneously or separately.

[0050] In the second operating mode, the X-ray measurement subsystems 22, 24 may be arranged on the same plane, but differ from Fig. 13 in that the X-ray generator 240 and the X-ray detector 224 arranged on one side of the test sample SP are immovable, while the X-ray generator 220 and the X-ray detector 244 arranged on the other side of the test sample SP are movable. In another embodiment, the X-ray generator 240 and the X-ray detector 224 may be arranged on the X-ray rotation mechanisms 226 and 246, respectively, and the X-ray generator 220 and the X-ray detector 244 arranged on the other side of the test sample SP are immovable.

[0051] It should be noted that the X-ray generator 220 and the X-ray detector 244 may be changed according to the positions of the X-ray test signals Lx1', Lx2' generated by the measurement X-ray beams Lx1, Lx2 being incident on the test sample SP. When the angular range to be measured is from θA to θB, the X-ray measurement subsystem 22 may cover the measurement of the angular range from θA to (θA + θB) / 2, while the X-ray measurement subsystem 24 may cover the measurement of the angular range from (θA + θB) / 2 to θB. To achieve this, the multi-axis sample stage 20 needs to rotate through the angular range from θA to (θA + θB) / 2. By simultaneously using the X-ray measurement subsystems 22 and 24 to perform measurements and further operating the multi-axis sample stage 20, the angular ranges from θA to (θA + θB) / 2 and (θA + θB) / 2 to θB can be measured simultaneously. Therefore, in the second operation mode, data can be collected over the angle range θA to θB in half the time. Furthermore, since it is necessary to operate only the X-ray generator and the X-ray detector attached to the same side, the operation of the mechanism can be simplified.

[0052] 15 is a schematic diagram of a third operating mode of the integrated semiconductor inspection system according to the second embodiment of the present invention. As shown in FIG. 15, in the third operating mode, the X-ray generators 220 and 240 and the X-ray detectors 224 and 244 may be disposed on X-ray rotation mechanisms 226, 227, 246, and 247, respectively. Each of the X-ray rotation mechanisms 226, 227, 246, and 247 may include one or more robot arms. Each robot arm may have multiple degrees of freedom in multiple directions. Therefore, the X-ray generator 220 and the X-ray detector 224 can rotate around the test sample SP simultaneously or separately.

[0053] In the third operating mode, the X-ray measurement subsystems 22 and 24 are not limited to being on the same plane. Alternatively, the multi-axis sample stage 20 may be fixed, but the X-ray generators 220 and 240 may be moved to specific relative positions depending on the desired measurement angle range. The X-ray measurement subsystems 22 and 24 may have different measurement angle ranges. For example, if the measurement angle range is from θA to θB, the X-ray measurement subsystem 22 may cover the measurement angle range from θA to (θA + θB) / 2, while the X-ray measurement subsystem 24 may cover the measurement angle range from (θA + θB) / 2 to θB. When the X-ray measurement subsystems 22 and 24 are on the same plane, the angle range from θA to (θA + θB) / 2 and the angle range from (θA + θB) / 2 to θB can be measured simultaneously, allowing data collection for measurement angles θA to θB in half the time in this mode. If the X-ray measurement subsystems 22 and 24 are located in different spatial planes, the effect of simultaneous measurements in different directions can be obtained, and the measurement time can be reduced by half.

[0054] Furthermore, although two sets of X-ray measurement subsystems 22 and 24 are employed in this embodiment, the present invention is not limited thereto. The number of X-ray measurement subsystems can be designed according to user needs. Furthermore, the numbers of X-ray generators, X-ray optical element groups, and X-ray detectors are not limited to those shown in FIGS. 12 to 15.

[0055] As in the first embodiment, the processing device 26 may output the X-ray spectrum information generated by the X-ray measurement subsystems 22, 24 as the measurement result of the test sample SP, or may further fit the X-ray spectrum information to obtain the structural parameters of the test sample SP as the measurement result. (Third Example)

[0056] 16 and 17 are functional block diagrams and a plan view of the measurement structure of a combined semiconductor testing system according to a third embodiment of the present invention, respectively.

[0057] As shown in FIGS. 16 and 17, a third embodiment of the present invention provides an integrated semiconductor inspection system 3 including a multi-axis sample stage 30, an optical metrology subsystem 32, an X-ray metrology subsystem 34, and a processing unit 36.

[0058] The multi-axis sample stage 30 is similar to the multi-axis sample stage 10 of the first embodiment, and therefore will not be described here. The optical measurement subsystem 32 includes a light source generator 320, an incident-end optical element group 322, a receiving-end optical element group 324, and an optical receiver 326. The light source generator 320 generates a measurement light beam Lm having a wavelength within an optical wavelength range covering at least the ultraviolet to near-infrared bands. More precisely, the light source generator 320 can generate a measurement light beam Lm having a wavelength between 200 nm and 3000 nm. In some embodiments, the light source generator 320 can include elements such as a titanium-tantalum crystal laser, a mercury arc lamp, or a halogen lamp, which can generate a measurement light beam Lm of various wavelengths.

[0059] The incident optical element group 322 guides the measurement light beam Lm to the test sample SP. The incident optical element group 322 may include one or more optical elements. In this embodiment, the incident optical element group 322 may include, for example, an optical filter, an optical collimator, an optical polarizer, and an optical compensator arranged in this order between the light source generator 320 and the test sample SP. However, the present invention is not limited thereto, and appropriate optical elements may be selected according to user needs. Here, the optical filter may be used to filter the measurement light beam Lm generated by the light source generator 320 to absorb stray light other than the target detection wavelength. The optical collimator may collimate the divergent light generated by the light source generator 320 into a symmetric and ordered measurement light beam Lm. The optical polarizer filters the measurement light beam Lm to pass light in a specific direction and imparts polarization characteristics to the measurement light beam Lm. The optical compensator may convert the light source light passing through the optical polarizer into circularly polarized or elliptically polarized light.

[0060] Similarly, the receiving end optical element group 324 may include one or more optical elements for receiving an optical test signal Lm' generated by irradiating the test sample SP with the measurement light beam Lm. The receiving end optical element group 324 may include optical elements such as an optical filter, an optical collimator, an optical polarizer, and an optical compensator, in that order. Here, the uses of the optical filter and the optical collimator will not be repeated. The optical polarizer arranged at the receiving end may be a rotating polarizer for converting the measurement light beam Lm, which has passed through the optical compensator of the incident end optical element group 322, into a light source having polarization characteristics. Similarly, the optical compensator of the receiving end optical element group 324 may be a rotating compensator, the rotation of which improves measurement accuracy.

[0061] The optical receiver 326 receives the optical test signal Lm′ guided through the receiving optical element group 324 and generates optical spectrum information corresponding to the optical test signal Lm′. The optical receiver 326 may be, for example, a spectrometer that receives the optical test signal Lm′ after it has been reflected or scattered by the test sample SP.

[0062] In the measurement process, the processing device 36 may control the multi-axis sample stage 30 to move and / or rotate so that the optical receiver 326 of the optical measurement subsystem 32 receives multiple optical test signals Lm' generated at multiple optical measurement positions and / or multiple optical measurement angles and generates multiple X-ray spectrum information corresponding to these optical test signals Lm'.

[0063] Furthermore, the light source generator 320 and the optical receiver 326 are disposed on an optical rotation mechanism 328. The optical rotation mechanism 328 may include one or more robotic arms connected to the light source generator 320 and the optical receiver 326. Each robotic arm may have multiple degrees of freedom in multiple directions. Thus, the light source generator 320 and the optical receiver 326 can rotate around the test sample SP simultaneously or separately. In this configuration, the processing device 36 can control the movement and / or rotation of the multi-axis sample stage 30 while also controlling the rotation of the optical rotation mechanism 328. As a result, the light source generator 320 emits measurement light beams Lm in multiple directions, and the optical receiver 326 receives multiple generated optical test signals Lm' from multiple optical measurement angles and generates corresponding multiple optical spectral information.

[0064] The X-ray measurement subsystem 34 is basically similar to the X-ray measurement system 1. The X-ray measurement subsystem 34 includes an X-ray generator 340, an X-ray optical element group 342, and an X-ray detector 344. It should be noted that the X-ray generator 340 has a configuration similar to that of the X-ray generator 12 of the first embodiment, and similarly employs an X-ray target material in which a plurality of excitation target materials are dispersed and embedded in a heat dissipation substrate as an anode, thereby improving heat dissipation efficiency. The details and advantages of the X-ray generator 340 can be referred to in the first embodiment, and therefore will not be described again here.

[0065] The X-ray optical element group 342 guides the measurement X-ray beam Lx to the test sample SP. The measurement X-ray beam Lx is a radiation beam mainly used in X-ray analysis techniques and has a wavelength range greater than 0.1 nanometers, such as a hard X-ray beam, a soft X-ray beam, or a gamma ray beam.

[0066] When the measurement X-ray beam Lx is irradiated onto the test sample SP, an X-ray test signal Lx' is generated by reflection, diffraction, scattering, or transmission according to different angles of incidence. By arranging the X-ray detector 344 at an appropriate position, it is possible to receive the above-mentioned X-ray test signal Lx' generated by reflection, diffraction, scattering, or transmission and generate corresponding X-ray spectrum information. The X-ray detector 344 may be a one- or more-dimensional high spatial resolution detector and can receive a signal for the X-ray test signal Lx' with energy exceeding 1 keV.

[0067] In the measurement process, the processing device 36 may control the multi-axis sample stage 30 to move and / or rotate so that the X-ray detector 344 receives a plurality of X-ray test signals Lx′ generated at a plurality of optical measurement positions and / or a plurality of X-ray measurement angles and generates a plurality of X-ray spectrum information corresponding to these X-ray test signals Lx′.

[0068] Furthermore, the X-ray generator 340 and the X-ray detector 344 are disposed on an X-ray rotation mechanism 346. The X-ray rotation mechanism 346 may include one or more robot arms connected to the X-ray generator 340 and the X-ray detector 344. Each robot arm may have degrees of freedom in multiple directions. Therefore, the X-ray generator 340 and the X-ray detector 344 can rotate around the test sample SP simultaneously or separately. In this configuration, the processing device 36 can control the movement and / or rotation of the multi-axis sample stage 30 while also controlling the rotation of the X-ray rotation mechanism 346. As a result, the X-ray generator 340 emits measurement X-ray beams Lx in multiple directions, and the X-ray detector 344 receives multiple generated X-ray test signals Lx' from multiple X-ray measurement angles and generates corresponding multiple pieces of X-ray spectrum information.

[0069] Furthermore, the integrated semiconductor inspection system 3 provided in the present invention can meet both anisotropic and isotropic measurement requirements. For example, while the X-ray measurement subsystem 34 is performing a measurement, the optical measurement subsystem 32 can simultaneously perform a measurement at a specific azimuth angle Φ to achieve simultaneous measurement in different directions. To meet the same measurement requirement, after the X-ray measurement subsystem 34 completes its measurement, the multi-axis sample stage 30 can be rotated along the Z axis at the corresponding azimuth angle Φ to rotate the test sample SP, allowing the X-ray measurement subsystem 34 and the optical measurement subsystem 32 to measure at the same position and spatial characteristics, thereby enabling the X-ray test signal Lx' and the optical test signal Lm' to be accurately measured from the same orientation and position in the same system.

[0070] The processing device 36 may be, for example, a computer system including a processor and a memory, and may be configured to control the controllable elements of the multi-axis sample stage 30, the optical metrology subsystem 32, and the X-ray metrology subsystem 34 by executing a stored instruction set or program code. Furthermore, the processing device 36 may be configured to output the optical spectrum information and the X-ray spectrum information as measurement results of the test sample SP, or may be configured to further fit the optical spectrum information and the X-ray spectrum information to obtain structural parameters of the test sample SP as measurement results. The structural parameters may include one or more of thickness, roughness, density, critical dimension, line edge roughness, refractive index, and extinction coefficient.

[0071] For example, the processing device 36 may perform fitting between the optical spectrum information and the X-ray spectrum information. The optical spectrum information may include, for example, a reflection spectrum obtained by making the measurement light beam Lm incident on the test sample SP at a plurality of different incident angles, and the X-ray spectrum information may include, for example, a reflection spectrum obtained by making the measurement X-ray beam Lx incident on the test sample SP at a plurality of different incident angles. The fitting result may also include structural parameters of the test sample SP.

[0072] In particular, the processing unit 36 ​​may perform fitting on the optical spectrum information and the X-ray spectrum information to inversely reconstruct important structural parameters of the test sample SP.

[0073] In this embodiment, the optical spectral information may be generated by different interaction mechanisms between the measurement light beam Lm and the test sample SP. For example, the optical spectral information may include optical reflectance spectral information and optical scattering spectral information. The optical reflectance spectral information is obtained by the light source generator 320 directing the measurement light beam Lm at multiple wavelengths and multiple incident angles by appropriately controlling the azimuth angles θ and Φ, and the optical receiver 326 collecting the optical test signal Lm′ generated by reflection. Similarly, the optical scattering spectral information is obtained by the optical receiver 326 collecting the optical test signal Lm′ generated by scattering. Therefore, the processing unit 36 ​​may statistically fit the optical reflectance spectral information and the optical scattering spectral information in a fitting analysis process to inversely reconstruct important structural parameters of the test sample SP.

[0074] Similarly, X-ray spectrum information may be generated by different interaction mechanisms between the measurement X-ray beam Lx and the test sample SP. For example, the X-ray spectrum information may include X-ray reflection spectrum information, X-ray scattering spectrum information, X-ray diffraction spectrum information, and X-ray fluorescence spectrum information. By appropriately controlling the azimuth angles θ and Φ, the X-ray detector 344 collects the X-ray test signal Lx' generated by reflection, thereby obtaining the optical reflection spectrum information. Similarly, the X-ray detector 344 collects the X-ray test signal Lx' generated by scattering, diffraction, and fluorescence excitation, respectively, thereby obtaining the X-ray scattering spectrum information, X-ray diffraction spectrum information, and X-ray fluorescence spectrum information. Therefore, in the fitting analysis process, the processing device 36 may perform fitting analyses including X-ray reflectivity (XRR) analysis, X-ray diffraction (XRD) analysis, small-angle X-ray scattering (SAX) analysis, and X-ray fluorescence (XRF) analysis on the X-ray reflectance spectrum information, X-ray scattering spectrum information, X-ray diffraction spectrum information, and X-ray fluorescence spectrum information, and inversely reconstruct important structural parameters of the test sample SP.

[0075] Taking XRR analysis as an example, when a measurement X-ray beam Lx is incident on the surface of a test sample SP, the structural parameters of the test sample SP can be determined by XRR analysis. For example, if the test sample SP has a multilayer structure, the density, thickness, roughness, etc. of each layer can be determined by XRR analysis based on the collected X-ray reflection spectrum information. On the other hand, if the test sample SP has a microelement (e.g., a gate-all-around field-effect transistor (GAAFET)), the orientation and critical dimension, etc. of the GAAFET can be determined by XRR analysis based on the X-ray reflection spectrum. (Beneficial Effects of Examples)

[0076] One of the beneficial effects of the present invention is that the X-ray measurement system and integrated semiconductor inspection system provided by the present invention use an X-ray target material doped with high entropy alloy materials (HEAMs) as the anode, and a design in which multiple excitation targets are dispersed and embedded in the heat dissipation substrate increases the contact area between the excitation target material and the heat dissipation substrate, thereby improving heat dissipation capacity. Furthermore, by using the line focus principle to control the X-ray radiation size to a desired size, the problem of electron beam damage to the anode and affecting X-ray flux can be effectively solved.

[0077] Furthermore, by providing three or more relative operation modes in the integrated semiconductor inspection system provided by the present invention, the mechanism design is simplified, the time required for calibrating the optical path is reduced, and the measurement efficiency can be effectively improved by more than two times.

[0078] The above disclosure is merely a preferred embodiment of the present invention and does not limit the scope of the claims of the present invention. Therefore, all equivalent technical modifications made using the specification and drawings of the present invention are included in the scope of the claims of the present invention. [Explanation of symbols]

[0079] 1: X-ray measurement system 2, 3: Integrated semiconductor inspection system 10, 20, 30: Multi-axis sample stage 12, 220, 240, 340: X-ray generator 120: Electron beam generator 122: Electromagnetic lenses 123: Target material actuator 124, 124', 124", 124': X-ray target material 1240, 1240', 1240", 1240': Heat dissipation board 1242, 1242', 1242", 1242': Excitation target material Sr, Sr”, Sr'): Photosensitive surface W1: Width 126: Vacuum chamber 1262: Vacuum pump EB: incident electron beam 14, 222, 242, 342: X-ray optical element group 16, 224, 244, 344: X-ray detector 11, 226, 227, 246, 247, 346: X-ray rotation mechanism 18, 26, 36: Processing equipment 22, 24, 34: X-ray measurement subsystem 32: Optical measurement subsystem 320: Light source generator 322:Incidence end optical element group 324: Light receiving end optical element group 326: Optical receiver SP: Test sample X, Y, Z: Axes θ,:Azimuth θ1: Predetermined angle θi: angle of incidence Lm: Measuring light beam Lx1, Lx2: Measurement X-ray beams Lm': Optical test signal 328: Optical rotation mechanism Lx, Lx1, Lx2: Measurement X-ray beams Lx', Lx1', Lx2': X-ray detection signal OP: Optical measurement path II, II-II, III-III, IV-IV: Section line Sv: Vertical distance Sh: Horizontal distance Wv, Wh: width S1: 1st page Dr: Rotation direction C1, C2: Center C3: Bottom center

Claims

1. a multi-axis sample stage, an X-ray generator, an X-ray optical element group, an X-ray detector, and a processing device; the multi-axis sample stage is configured to mount a test sample thereon; the X-ray generator includes an electron beam generator, an electromagnetic lens group, an X-ray target material, and a vacuum chamber; the electron beam generator generates an incident electron beam; the electromagnetic lens group focuses the incident electron beam and simultaneously controls the focusing position of the incident electron beam; the X-ray target material is disposed on a target material actuator and includes a heat dissipation substrate and a plurality of excitation target materials embedded and dispersed in the heat dissipation substrate, and receives the focused incident electron beam at an incident angle to generate a measurement X-ray beam; the vacuum chamber accommodates the electron beam generator, the electromagnetic lens group, the target material actuator, and the X-ray target material, and has a window through which the measurement X-ray beam passes; the X-ray optical group guides the measurement X-ray beam to the test sample; the X-ray detector receives an X-ray test signal generated by irradiating the test sample with the measurement X-ray beam, and generates X-ray spectrum information corresponding to the X-ray test signal; the processing device is configured to output a measurement result of the test sample based on the X-ray spectrum information. An X-ray measurement system characterized by:

2. when the X-ray target receives the focused incident electron beam and generates the measurement X-ray beam, the target actuator operates the X-ray target so that an incident position of the incident electron beam irradiated on the X-ray target changes over time. The X-ray measurement system according to claim 1 .

3. the heat dissipation substrate is a plate-like body, and the plurality of excitation target materials are a plurality of ring bodies arranged in order from the inside to the outside around the center of the plate-like body. The X-ray measurement system according to claim 2 .

4. Each of the rings has a rectangular cross section, and each of the rings has a light receiving surface that is not in contact with the plate-like body. The X-ray measurement system according to claim 3 .

5. Each of the ring bodies has a triangular cross section, the triangular cross section having a hypotenuse inclined at a predetermined angle with respect to the first surface of the plate-like body, and the predetermined angles of the plurality of ring bodies are different from one another. The X-ray measurement system according to claim 3 .

6. the predetermined angles of the ring bodies gradually increase from the center of the plate-like body toward the outside; The X-ray measurement system according to claim 5 .

7. the plate-like body is a bowl-shaped plate-like body, each of the ring-like bodies is arranged around the center of the bottom of the bowl-shaped plate-like body, and each of the ring-like bodies has a light-receiving surface that is not in contact with the bowl-shaped plate-like body; The X-ray measurement system according to claim 3 .

8. the heat dissipation substrate is a plate-like body, the plurality of excitation target materials are a plurality of block bodies arranged in an array on a first surface of the plate-like body, and each of the block bodies has a light receiving surface that is not in contact with the plate-like body; The X-ray measurement system according to claim 2 .

9. a cross-sectional area of ​​the electron beam formed on the X-ray target material by irradiating the incident electron beam on the X-ray target material is smaller than an area of ​​the first surface of the plate-shaped body; The X-ray measurement system according to claim 3 .

10. a multi-axis sample stage, at least two X-ray metrology subsystems, and a processing device; the multi-axis sample stage is configured to mount a test sample thereon; each of the X-ray metrology subsystems includes an X-ray generator, an X-ray optics group, and an X-ray detector; the X-ray generator includes an electron beam generator, an electromagnetic lens group, an X-ray target material, and a vacuum chamber; the electron beam generator generates an incident electron beam; the electromagnetic lens group focuses the incident electron beam and simultaneously controls the focusing position of the incident electron beam; the X-ray target material is disposed on a target material actuator and includes a heat dissipation substrate and a plurality of excitation target materials embedded and dispersed in the heat dissipation substrate, and receives the focused incident electron beam at an incident angle to generate a measurement X-ray beam; the vacuum chamber accommodates the electron beam generator, the electromagnetic lens group, the target material actuator, and the X-ray target material, and has a window through which the measurement X-ray beam passes; the X-ray optical group guides the measurement X-ray beam to the test sample; the X-ray detector receives an X-ray test signal generated by irradiating the test sample with the measurement X-ray beam, and generates X-ray spectrum information corresponding to the X-ray test signal; the processing device is configured to output a measurement result of the test sample based on the X-ray spectrum information generated by at least two of the X-ray measurement subsystems. A combined semiconductor inspection system.

11. when the X-ray target receives the focused incident electron beam and generates the measurement X-ray beam, the target actuator operates the X-ray target so that an incident position of the incident electron beam irradiated on the X-ray target changes over time. The integrated semiconductor inspection system of claim 10.

12. the heat dissipation substrate is a plate-like body, and the plurality of excitation target materials are a plurality of ring bodies arranged in order from the inside to the outside around the center of the plate-like body. The integrated semiconductor inspection system of claim 11.

13. Each of the rings has a rectangular cross section, and each of the rings has a light receiving surface that is not in contact with the plate-like body.

13. The integrated semiconductor inspection system of claim 12.

14. Each of the ring bodies has a triangular cross section, the triangular cross section having a hypotenuse inclined at a predetermined angle with respect to the first surface of the plate-like body, and the predetermined angles of the plurality of ring bodies are different from one another.

13. The integrated semiconductor inspection system of claim 12.

15. the predetermined angles of the ring bodies gradually increase from the center of the plate-like body toward the outside; 15. The integrated semiconductor inspection system of claim 14.

16. the plate-like body is a bowl-shaped plate-like body, each of the ring-like bodies is arranged around the center of the bottom of the bowl-shaped plate-like body, and each of the ring-like bodies has a light-receiving surface that is not in contact with the bowl-shaped plate-like body; 13. The integrated semiconductor inspection system of claim 12.

17. the heat dissipation substrate is a plate-like body, the plurality of excitation target materials are a plurality of block bodies arranged in an array on a first surface of the plate-like body, and each of the block bodies has a light receiving surface that is not in contact with the plate-like body; The integrated semiconductor inspection system of claim 11.

18. a cross-sectional area of ​​the electron beam formed on the X-ray target material by irradiating the incident electron beam on the X-ray target material is smaller than an area of ​​the first surface of the plate-shaped body; 13. The integrated semiconductor inspection system of claim 12.

19. the multi-axis sample stage has a stage moving mechanism and a stage rotating mechanism, the stage moving mechanism moves the test sample along one or more of a first axis, a second axis, and a third axis, the stage rotating mechanism rotates the test sample along one or more of the first axis, the second axis, and the third axis, and the X-ray detectors of each of the X-ray measurement subsystems are disposed on an X-ray rotating mechanism so as to rotate around the test sample simultaneously or separately; the processing device controls the movement and / or rotation of the multi-axis sample stage and controls the rotation of each of the X-ray rotation mechanisms so that the X-ray detector of each of the X-ray measurement subsystems receives a plurality of the X-ray test signals and generates a plurality of the X-ray spectrum information corresponding to the plurality of the X-ray test signals.

19. The integrated semiconductor inspection system of any one of claims 10 to 18.

20. the multi-axis sample stage has a stage moving mechanism and a stage rotating mechanism, the stage moving mechanism moves the test sample along one or more of a first axis, a second axis, and a third axis, the stage rotating mechanism rotates the test sample along one or more of the first axis, the second axis, and the third axis, and the X-ray generators of each of the X-ray measurement subsystems are disposed on an X-ray rotating mechanism so as to rotate around the test sample simultaneously or separately; the processing device controls the movement and / or rotation of the multi-axis sample stage and controls the rotation of each of the X-ray rotation mechanisms so that the X-ray detector of each of the X-ray measurement subsystems receives a plurality of the X-ray test signals and generates a plurality of the X-ray spectrum information corresponding to the plurality of the X-ray test signals.

19. The integrated semiconductor inspection system of any one of claims 10 to 18.

21. the X-ray generator and the X-ray detector of each of the X-ray measurement subsystems are disposed on an X-ray rotation mechanism so as to rotate simultaneously or separately around the test sample; the processing device controls the rotation of each of the X-ray rotation mechanisms so that the X-ray detector of each of the X-ray measurement subsystems receives a plurality of the X-ray test signals and generates a plurality of the X-ray spectrum information corresponding to the plurality of the X-ray test signals.

19. The integrated semiconductor inspection system of any one of claims 10 to 18.

22. a multi-axis sample stage, an optical metrology subsystem, an X-ray metrology subsystem, and a processing unit; the multi-axis sample stage is configured to mount a test sample thereon; the optical measurement subsystem includes a light source generator, an incident end optical element group, a receiving end optical element group, and an optical receiver; the light source generator generates a measurement light beam having a wavelength within a light wavelength range covering at least an ultraviolet band to a near-infrared band; the incident end optical element group guides the measurement light beam to the test sample; the light-receiving end optical element group receives an optical test signal generated by irradiating the test sample with the measurement light beam; the optical receiver receives the optical test signal guided by the receiving end optical element group and generates optical spectrum information corresponding to the optical test signal; the X-ray measurement subsystem comprises an X-ray generator, an X-ray optical element group, and an X-ray detector according to any one of claims 1 to 9; the X-ray optical group guides the measurement X-ray beam to the test sample; the X-ray detector receives an X-ray test signal generated by irradiating the test sample with the measurement X-ray beam, and generates X-ray spectrum information corresponding to the X-ray test signal; the processing device is configured to output a measurement result of the test sample based on the optical spectrum information and the X-ray spectrum information. A combined semiconductor inspection system.

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