Capacitor Array

By integrating a high-temperature built-in member at the outer periphery, the capacitor array achieves uniform thickness, addressing processing defects and facilitating via conductor formation.

JP7597277B2Active Publication Date: 2024-12-10MURATA MFG CO LTD
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Patent Information

Application Number
JP2024526359
Authority / Receiving Office
JP · JP
Patent Type
Patents
Current Assignee / Owner
Priority Date
2022-06-06
Filing Date
2023-05-25
Publication Date
2024-12-10
Estimated Expiration
2043-05-25

AI Technical Summary

Technical Problem

The manufacturing of capacitor arrays results in uneven thickness distribution, leading to processing defects during embedding due to resin flow to the outer periphery, making it difficult to form via conductors to electrode parts.

Method used

Incorporating a built-in member with a higher melting temperature than the sealing layer at the outer periphery of the capacitor section, ensuring uniform thickness by maintaining the resin layer thickness across the array.

Benefits of technology

This approach facilitates easier formation of via conductors and reduces deformation, achieving a nearly uniform overall thickness in the capacitor array.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

This capacitor array 1 comprises: a capacitor unit 20 which includes a plurality of capacitor elements 10 planarly disposed in a plane direction perpendicular to a thickness direction, and in which mutually adjacent capacitor elements 10 are separated; a sealing layer 30 which seals the capacitor unit 20; and an embedded member 40 disposed inside the sealing layer 30 together with the capacitor unit 20. The capacitor elements 10 each include a first electrode layer (for example, positive electrode plate 11), a second electrode layer (for example, negative electrode layer 12), and a dielectric layer 13, wherein the first electrode layer and the second electrode layer face each other in the thickness direction with the dielectric layer 13 therebetween. The embedded member 40 has a higher melting temperature than the sealing layer 30, and is disposed on the plane-direction outer circumferential section of the capacitor unit 20.
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Description

[Technical field]

[0001] The present invention relates to a capacitor array. [Background technology]

[0002] An electrolytic capacitor, which is a type of capacitor, is produced, for example, by sealing, with a resin, a capacitor element that includes an anode body, a dielectric layer provided on the surface of the anode body, and a cathode portion provided on the surface of the dielectric layer.

[0003] Patent Document 1 discloses an electrolytic capacitor including: a capacitor element including an anode body, a dielectric layer formed on the anode body, and a cathode portion formed on the dielectric layer; an anode terminal electrically connected to the anode body, a cathode terminal electrically connected to the cathode portion, and a resin sealing material that covers the capacitor element and exposes at least a portion of the anode terminal and the cathode terminal, wherein the anode body includes a foil containing a valve action metal, and an insulating spacer is provided on a surface of the cathode portion.

[0004] Patent Document 2 discloses an electronic component-embedded wiring board having at least two or more solid electrolytic capacitors built in and having a connection terminal portion and an inductor formed on its surface, wherein the solid electrolytic capacitor has a current collector layer provided on at least one side of a valve metal sheet body (anode portion), the connection terminal portion comprises an anode connection terminal portion electrically connected to the valve metal sheet body of the solid electrolytic capacitor at at least two points via the wiring pattern and inductor and / or via electrode and / or through electrode, and a cathode connection terminal portion electrically connected to the current collector layer (cathode portion) of the solid electrolytic capacitor via the wiring pattern and / or inductor and / or via electrode and / or through electrode, and the inductor is formed in the shape of a conductor pattern. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2017-17122 A [Patent Document 2] JP 2009-252764 A Summary of the Invention [Problem to be solved by the invention]

[0006] When a capacitor array is produced by sealing a capacitor section in which multiple capacitor elements are arranged in a plane with resin, there are no capacitor elements on the periphery of the capacitor section, and therefore if the resin flows to the periphery of the capacitor section, the thickness of the resulting capacitor array will become thinner as it approaches the periphery.

[0007] When embedding a capacitor array having such a non-uniform thickness as a post-process, if the thickness of the product after embedding is to be made uniform, the embedding resin layer covering the outer periphery of the capacitor array becomes thick, while the embedding resin layer covering the center of the capacitor array becomes thin. Therefore, when forming via conductors for connecting with the electrodes of the capacitor elements in the embedding resin layer, there is a risk of processing defects such as not being able to form holes for the via conductors up to the electrodes of the capacitor elements in the parts where the embedding resin layer is thick, or forming holes for the via conductors up to the electrodes of the capacitor elements in the parts where the embedding resin layer is thin. Therefore, it is necessary to make the thickness of the entire capacitor array uniform.

[0008] An object of the present invention is to provide a capacitor array that can have an overall thickness that is nearly uniform. [Means for solving the problem]

[0009] The capacitor array of the present invention includes a capacitor section including a plurality of capacitor elements arranged in a plane in a plane direction perpendicular to the thickness direction, with adjacent capacitor elements being separated from each other, a sealing layer that seals the capacitor section, and a built-in member that is arranged inside the sealing layer together with the capacitor section. Each of the capacitor elements includes a first electrode layer, a second electrode layer, and a dielectric layer, with the first electrode layer and the second electrode layer facing each other in the thickness direction via the dielectric layer. The built-in member has a melting temperature higher than that of the sealing layer, and is arranged on the outer periphery of the capacitor section in the plane direction. Effect of the Invention

[0010] According to the present invention, it is possible to provide a capacitor array whose overall thickness can be made nearly uniform. [Brief description of the drawings]

[0011] [Figure 1] FIG. 1 is a cross-sectional view illustrating a schematic example of a capacitor array according to a first embodiment of the present invention. [Diagram 2] FIG. 2 is a plan view of the capacitor array shown in FIG. 1 taken along the P1 plane. [Diagram 3] FIG. 3 is a cross-sectional view showing an example of a state in which an embedding process has been performed on a capacitor array according to an embodiment having built-in members. [Figure 4] FIG. 4 is a cross-sectional view showing a schematic example of a state in which an embedding process has been performed on a capacitor array according to a comparative example that does not have a built-in member. [Diagram 5] FIG. 5 is a plan view that illustrates an example of a process for preparing a capacitor array sheet. [Figure 6] FIG. 6 is a cross-sectional view that illustrates an example of a process for preparing a capacitor array sheet. [Figure 7] FIG. 7 is a plan view that illustrates an example of a step of cutting the capacitor array sheet. [Figure 8]FIG. 8 is a cross-sectional view that illustrates an example of a step of cutting the capacitor array sheet. [Figure 9] FIG. 9 is a plan view that illustrates an example of a step of arranging the built-in components. [Figure 10] FIG. 10 is a cross-sectional view that illustrates an example of a process for arranging the built-in member. [Figure 11] FIG. 11 is a plan view that illustrates an example of a step of thermocompression bonding an insulating resin sheet. [Figure 12] FIG. 12 is a cross-sectional view that illustrates an example of a step of thermocompression bonding an insulating resin sheet. [Figure 13] FIG. 13 is a plan view showing a schematic example of a process for singulating into capacitor arrays. [Figure 14] FIG. 14 is a cross-sectional view that illustrates an example of a process for singulating into capacitor arrays. [Figure 15] FIG. 15 is a cross-sectional view showing a schematic modification of the arrangement of the external electrode layers. [Figure 16] FIG. 16 is a plan view showing a schematic example of the arrangement of the built-in members. [Figure 17] FIG. 17 is a plan view illustrating a first modified example of the arrangement of the built-in members. [Figure 18] FIG. 18 is a plan view that illustrates a second modified example of the arrangement of the built-in components. [Figure 19] FIG. 19 is a plan view that illustrates a third modified example of the arrangement of the built-in components. [Figure 20] FIG. 20 is a plan view that illustrates a fourth modified example of the arrangement of the built-in components. [Figure 21] FIG. 21 is a cross-sectional view illustrating a schematic example of a capacitor array according to a second embodiment of the present invention. [Figure 22] FIG. 22 is a plan view illustrating an example of a process for preparing a capacitor array sheet. [Figure 23] FIG. 23 is a cross-sectional view that illustrates an example of a process for preparing a capacitor array sheet. [Figure 24]FIG. 24 is a plan view that illustrates an example of a step of cutting the capacitor array sheet. [Diagram 25] FIG. 25 is a cross-sectional view that illustrates an example of a step of cutting the capacitor array sheet. [Figure 26] FIG. 26 is a plan view that illustrates an example of a step of thermocompression bonding an insulating resin sheet. [Figure 27] FIG. 27 is a cross-sectional view that illustrates an example of a step of thermocompression bonding an insulating resin sheet. [Figure 28] FIG. 28 is a plan view illustrating an example of a process for singulating into capacitor arrays. [Figure 29] FIG. 29 is a cross-sectional view that illustrates an example of a process for singulating into capacitor arrays. [Diagram 30] FIG. 30 is a plan view illustrating another example of a process for singulating into capacitor arrays. [Diagram 31] FIG. 31 is a cross-sectional view illustrating a schematic diagram of another example of the capacitor array according to the second embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] The capacitor array of the present invention will be described below. Note that the present invention is not limited to the following configuration, and may be modified as appropriate without departing from the spirit of the present invention. In addition, a combination of multiple individual preferred configurations described below also constitutes the present invention.

[0013] In this specification, terms indicating the relationship between elements (e.g., "vertical," "parallel," "orthogonal," etc.) and terms indicating the shapes of elements are not intended to be used in a strict sense, but are intended to include a range of substantial equivalence, for example, a difference of a few percent.

[0014] The following embodiments are merely examples, and it goes without saying that partial replacement or combination of the configurations shown in the different embodiments is possible. From the second embodiment onwards, a description of the matters common to the first embodiment will be omitted, and only the differences will be described. In particular, similar effects due to similar configurations will not be mentioned in each embodiment.

[0015] In the following description, unless there is a need to distinguish between the various embodiments, they will simply be referred to as the "capacitor array of the present invention."

[0016] The drawings shown below are schematic diagrams, and the dimensions, aspect ratio, and scale may differ from those of the actual product.

[0017] [First embodiment] In the capacitor array according to the first embodiment of the present invention, the built-in member includes a different structure from the capacitor elements.

[0018] Fig. 1 is a cross-sectional view showing a schematic diagram of an example of a capacitor array according to a first embodiment of the present invention, Fig. 2 is a plan view of the capacitor array shown in Fig. 1 taken along a P1 plane.

[0019] The capacitor array 1 shown in Figures 1 and 2 comprises a capacitor section 20 including a plurality of capacitor elements 10, a sealing layer 30 that seals the capacitor section 20, and an internal member 40 that is arranged inside the sealing layer 30 together with the capacitor section 20.

[0020] The capacitor array 1 may further include an external electrode layer 50 provided on the surface of the sealing layer 30. In that case, the external electrode layer 50 includes a first external electrode layer 51 and a second external electrode layer 52, for example.

[0021] The number of capacitor elements 10 included in capacitor section 20 is not particularly limited as long as it is two or more.

[0022] In capacitor section 20, a plurality of capacitor elements 10 are arranged in a plane in a plane direction perpendicular to the thickness direction (the up-down direction in FIG. 1).

[0023] In the capacitor section 20, the multiple capacitor elements 10 may be arranged linearly, i.e., along one direction (for example, the left-right direction in FIG. 2), or may be arranged planarly, i.e., along multiple directions (for example, the left-right direction and the up-down direction in FIG. 2). The multiple capacitor elements 10 may be arranged regularly or irregularly.

[0024] In the capacitor section 20, adjacent capacitor elements 10 are separated from each other. It is sufficient that adjacent capacitor elements 10 are physically separated from each other. Therefore, adjacent capacitor elements 10 may be electrically separated from each other or may be electrically connected to each other. For example, when the capacitor section 20 includes three or more capacitor elements 10, a combination of electrically separated capacitor elements 10 and electrically connected capacitor elements 10 may be present.

[0025] The portion where adjacent capacitor elements 10 are separated is preferably filled with an insulating material such as sealing layer 30.

[0026] The distance between adjacent capacitor elements 10 is not particularly limited, but is preferably 15 μm or more, more preferably 30 μm or more, and even more preferably 50 μm or more. On the other hand, the distance between adjacent capacitor elements 10 is preferably 500 μm or less, more preferably 200 μm or less, and even more preferably 150 μm or less.

[0027] The interval between adjacent capacitor elements 10 may be constant in the thickness direction or may decrease in the thickness direction. For example, if the interval between adjacent capacitor elements 10 decreases in the thickness direction, and the portion separating the adjacent capacitor elements 10 is tapered, the insulating material such as the sealing layer 30 can be easily filled.

[0028] Each of the capacitor elements 10 includes a first electrode layer, a second electrode layer, and a dielectric layer, and the first electrode layer and the second electrode layer face each other in the thickness direction with the dielectric layer interposed therebetween.

[0029] 1, the first electrode layer is an anode plate 11, and the second electrode layer is a cathode layer 12. In this way, capacitor element 10 constitutes an electrolytic capacitor.

[0030] The anode plate 11 has, for example, a core 11A made of a metal and a porous portion 11B provided on at least one main surface of the core 11A. A dielectric layer 13 is provided on the surface of the porous portion 11B, and a cathode layer 12 is provided on the surface of the dielectric layer 13.

[0031] Cathode layer 12 includes, for example, solid electrolyte layer 12A provided on the surface of dielectric layer 13. Cathode layer 12 preferably further includes conductor layer 12B provided on the surface of solid electrolyte layer 12A. When cathode layer 12 includes solid electrolyte layer 12A, capacitor element 10 constitutes a solid electrolytic capacitor.

[0032] Sealing layer 30 is preferably provided on both principal surfaces opposing each other in the thickness direction of capacitor section 20. Sealing layer 30 protects multiple capacitor elements 10.

[0033] The sealing layer 30 may be composed of only one layer, or may be composed of two or more layers. When the sealing layer 30 is composed of two or more layers, the materials constituting each layer may be the same or different.

[0034] Sealing layer 30 is formed so as to seal capacitor portion 20 by, for example, a method of thermocompression bonding an insulating resin sheet, a method of applying an insulating resin paste and then thermally curing it, or the like.

[0035] 1 and 2, the built-in member 40 is disposed on the outer periphery in the planar direction of the capacitor section 20. As shown in Fig. 1, the built-in member 40, together with the capacitor section 20, is preferably sealed by a sealing layer 30 from both sides opposing each other in the thickness direction.

[0036] In the example shown in FIGS. 1 and 2, the built-in member 40 has a different configuration from the capacitor element 10 and is electrically insulated from the capacitor section 20.

[0037] The built-in member 40 may be in contact with the capacitor portion 20, or may be separated from the capacitor portion 20. When the built-in member 40 is separated from the capacitor portion 20, it is preferable that an insulating material such as a sealing layer 30 is filled between the built-in member 40 and the capacitor portion 20.

[0038] The built-in member 40 may or may not be exposed from the sealing layer 30 in the planar direction. On the other hand, it is preferable that the built-in member 40 is not exposed from the sealing layer 30 in the thickness direction.

[0039] Fig. 3 is a cross-sectional view showing an example of a state in which a embedding process has been performed on a capacitor array according to an embodiment having a built-in member, and Fig. 4 is a cross-sectional view showing an example of a state in which a embedding process has been performed on a capacitor array according to a comparative example having no built-in member.

[0040] As in the capacitor array 1 of the embodiment shown in Figure 3, by arranging the built-in member 40 on the outer periphery of the capacitor section 20 in the planar direction and sealing the built-in member 40 together with the capacitor section 20 with a sealing layer 30, the thickness of the entire capacitor array 1 can be made nearly uniform.

[0041] On the other hand, if capacitor section 20 is simply sealed with sealing layer 30, as in capacitor array 1a of the comparative example shown in Figure 4, capacitor elements 10 are not present on the outer periphery of capacitor section 20, and therefore the thickness of the entire capacitor array 1a tends to become thinner toward the outer periphery.

[0042] 4, when the embedding resin layer 60 is formed to cover the sealing layer 30 and the external electrode layer 50, if the thickness of the product after embedding is to be constant, the embedding resin layer 60 will be thick at the outer periphery, while the embedding resin layer 60 will be thin at the center. As a result, when forming via conductors in the embedding resin layer 60 for connecting to the external electrode layer 50, holes for the via conductors cannot be formed up to the external electrode layer 50 in the portion where the embedding resin layer 60 is thick, or holes for the via conductors are formed up to the external electrode layer 50 in the portion where the embedding resin layer 60 is thin, and other processing defects may occur.

[0043] 3, in the case where the embedding resin layer 60 is formed so as to cover the sealing layer 30 and the external electrode layer 50, the thickness of the embedding resin layer 60 can be made nearly uniform. As a result, processing becomes easier when forming via conductors in the embedding resin layer 60 for connection with the external electrode layer 50. In addition, deformation in the outer periphery can also be reduced.

[0044] In order to prevent deformation due to heat, the built-in member 40 has a higher melting temperature than the sealing layer 30 .

[0045] The melting temperatures of the sealing layer 30 and the built-in member 40 can be confirmed by raising the temperature of small test pieces cut out from each of them and measuring the temperature at which the small test pieces melt. Alternatively, the melting temperature may be determined as the melting peak measured using a differential scanning calorimeter (DSC).

[0046] The built-in member 40 is made of, for example, an insulating material. In this case, the built-in member 40 is preferably made of an insulating resin. Furthermore, the built-in member 40 may contain a filler such as an inorganic filler.

[0047] The height (dimension in the thickness direction) of the built-in member 40 is not particularly limited, but when the capacitor array 1 is produced by the method described below, the height of the built-in member 40 is preferably equal to the thickness of the anode plate 11. Here, "equal" does not have to be exactly the same, but may be within a substantially similar range, for example, within a range of a few percent. The height of the built-in member 40 may be different from the thickness of the anode plate 11. Even if the height of the built-in member 40 is thinner or thicker than the thickness of the anode plate 11, a capacitor array with an overall thickness closer to uniform can be provided compared to a capacitor array without the built-in member 40.

[0048] The width (dimension in the planar direction) of the built-in component 40 is not particularly limited, but is preferably 15 μm or more, more preferably 30 μm or more, and even more preferably 50 μm or more. On the other hand, the width of the built-in component 40 is preferably 500 μm or less, more preferably 200 μm or less, and even more preferably 150 μm or less. The width of the built-in component 40 may be the same as the distance between adjacent capacitor elements 10, may be smaller than the distance between adjacent capacitor elements 10, or may be larger than the distance between adjacent capacitor elements 10.

[0049] The width of the built-in member 40 may be constant in the thickness direction, or may decrease in the thickness direction.

[0050] From the viewpoint of making the thickness of the entire capacitor array 1 closer to uniform, it is preferable that the proportion of the built-in component 40 is large, but on the other hand, if the proportion of the built-in component 40 becomes too large, the proportion of the capacitor element 10 will become small. For the above reasons, in a plan view from the thickness direction, the proportion of the area of ​​the built-in component 40 to the area of ​​the entire capacitor array 1 is preferably 0.1% or more and 10% or less.

[0051] The detailed configuration of the capacitor array 1 will be described below.

[0052] Examples of the planar shape of capacitor element 10 when viewed in the thickness direction include a rectangle (square or oblong), a quadrangle other than a rectangle, a polygon such as a triangle, a pentagon, or a hexagon, a circle, an ellipse, a combination of these, etc. The planar shape of capacitor element 10 may also be an L-shape, a C-shape, a step shape, etc.

[0053] The planar shapes of capacitor elements 10 when viewed in the thickness direction may be the same as each other, may be different from each other, or may be partially different.

[0054] The areas of capacitor elements 10 when viewed in the thickness direction may be the same as each other, may be different from each other, or may be partially different.

[0055] When the capacitor element 10 includes an anode plate 11 and a cathode layer 12, the anode plate 11 is preferably made of a valve metal that exhibits a so-called valve action. Examples of the valve metal include simple metals such as aluminum, tantalum, niobium, titanium, and zirconium, and alloys containing at least one of these metals. Among these, aluminum or an aluminum alloy is preferred.

[0056] The shape of the anode plate 11 is preferably a flat plate, and more preferably a foil. Thus, in this specification, the term "plate-like" includes "foil-like".

[0057] The anode plate 11 may have the porous portion 11B on at least one main surface of the core portion 11A. In other words, the anode plate 11 may have the porous portion 11B on only one main surface of the core portion 11A, or may have the porous portion 11B on both main surfaces of the core portion 11A. The porous portion 11B is preferably a porous layer formed on the surface of the core portion 11A, and more preferably an etched layer.

[0058] The thickness of the anode plate 11 before the etching process is preferably 60 μm or more and 200 μm or less. The thickness of the core portion 11A that is not etched after the etching process is preferably 15 μm or more and 70 μm or less. The thickness of the porous portion 11B is designed according to the required withstand voltage and electrostatic capacitance, but it is preferably 10 μm or more and 180 μm or less in total for the porous portions 11B on both sides of the core portion 11A.

[0059] The pore size of the porous portion 11B is preferably 10 nm or more and 600 nm or less. The pore size of the porous portion 11B means the median size D50 measured by a mercury porosimeter. The pore size of the porous portion 11B can be controlled by adjusting various conditions in the etching, for example.

[0060] The dielectric layer 13 provided on the surface of the porous portion 11B is porous reflecting the surface state of the porous portion 11B, and has a finely uneven surface shape. The dielectric layer 13 is preferably made of an oxide film of the valve metal. For example, when an aluminum foil is used as the anode plate 11, the dielectric layer 13 made of an oxide film can be formed by anodizing the surface of the aluminum foil in an aqueous solution containing ammonium adipate or the like (also called chemical conversion treatment).

[0061] The thickness of the dielectric layer 13 is designed according to the required withstand voltage and capacitance, but is preferably 10 nm or more and 100 nm or less.

[0062] When the cathode layer 12 includes the solid electrolyte layer 12A, examples of materials constituting the solid electrolyte layer 12A include conductive polymers such as polypyrroles, polythiophenes, and polyanilines. Among these, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene), also known as PEDOT, is particularly preferred. The conductive polymer may also include a dopant such as polystyrene sulfonate (PSS). The solid electrolyte layer 12A preferably includes an inner layer that fills the pores (recesses) of the dielectric layer 13, and an outer layer that covers the dielectric layer 13.

[0063] The thickness of solid electrolyte layer 12A from the surface of porous portion 11B is preferably 2 μm or more and 20 μm or less.

[0064] The solid electrolyte layer 12A is formed, for example, by a method of forming a polymerized film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 using a treatment liquid containing a monomer such as 3,4-ethylenedioxythiophene, or a method of applying a dispersion liquid of a polymer such as poly(3,4-ethylenedioxythiophene) to the surface of the dielectric layer 13 and drying it.

[0065] The solid electrolyte layer 12A can be formed in a predetermined region by applying the above-mentioned treatment liquid or dispersion liquid to the surface of the dielectric layer 13 by a method such as sponge transfer, screen printing, dispenser application, or inkjet printing.

[0066] When the cathode layer 12 includes the conductor layer 12B, the conductor layer 12B includes at least one layer selected from a conductive resin layer and a metal layer. The conductor layer 12B may be only a conductive resin layer or only a metal layer. The conductor layer 12B preferably covers the entire surface of the solid electrolyte layer 12A.

[0067] The conductive resin layer may be, for example, a conductive adhesive layer containing at least one conductive filler selected from the group consisting of a silver filler, a copper filler, a nickel filler, and a carbon filler.

[0068] Examples of the metal layer include a metal plating film and a metal foil. The metal layer is preferably made of at least one metal selected from the group consisting of nickel, copper, silver, and alloys containing these metals as main components. The term "main component" refers to the elemental component with the largest weight ratio.

[0069] The conductive layer 12B includes, for example, a carbon layer provided on the surface of the solid electrolyte layer 12A and a copper layer provided on the surface of the carbon layer.

[0070] The carbon layer is provided to electrically and mechanically connect the solid electrolyte layer 12A and the copper layer. The carbon layer can be formed in a predetermined area by applying a carbon paste to the surface of the solid electrolyte layer 12A by a method such as sponge transfer, screen printing, dispenser application, or inkjet printing. It is preferable that the carbon layer is laminated with the copper layer in the next step while the carbon layer is in a viscous state before drying. The thickness of the carbon layer is preferably 2 μm or more and 20 μm or less.

[0071] The copper layer can be formed in a predetermined area by applying a copper paste to the surface of the carbon layer by sponge transfer, screen printing, spray application, dispenser application, inkjet printing, etc. The thickness of the copper layer is preferably 2 μm or more and 20 μm or less.

[0072] The sealing layer 30 is made of an insulating material. In this case, the sealing layer 30 is preferably made of an insulating resin.

[0073] Examples of the insulating resin that constitutes the sealing layer 30 include epoxy resin, phenol resin, and the like.

[0074] The sealing layer 30 preferably further contains a filler.

[0075] Examples of the filler contained in the sealing layer 30 include inorganic fillers such as silica particles and alumina particles.

[0076] Between the capacitor section 20 and the sealing layer 30, for example, a stress relaxation layer, a moisture-proof film, or other layer may be provided.

[0077] The capacitor array 1 preferably further includes a through-hole conductor 70 as shown in FIG.

[0078] It is preferable that the through-hole conductor 70 includes at least one of a first through-hole conductor 71 electrically connected to a first electrode layer (e.g., anode plate 11) of the capacitor element 10, and a second through-hole conductor 72 electrically connected to a second electrode layer (e.g., cathode layer 12) of the capacitor element 10.

[0079] The first through-hole conductor 71 penetrates the capacitor portion 20 and the sealing layer 30 in the thickness direction.

[0080] It is sufficient that the first through-hole conductor 71 is provided on at least the inner wall surface of the first through hole 81 which penetrates the capacitor portion 20 and the sealing layer 30 in the thickness direction. The first through-hole conductor 71 may be provided only on the inner wall surface of the first through hole 81, or may be provided throughout the entire interior of the first through hole 81.

[0081] It is preferable that the first through-hole conductor 71 is electrically connected to the anode plate 11 on the inner wall surface of the first through hole 81. More specifically, it is preferable that the first through-hole conductor 71 is electrically connected to the end surface of the anode plate 11 facing the inner wall surface of the first through hole 81 in the planar direction. In this way, the anode plate 11 is electrically led out to the outside via the first through-hole conductor 71.

[0082] It is preferable that the core portion 11A and the porous portion 11B are exposed on the end face of the anode plate 11 that is electrically connected to the first through-hole conductor 71. In this case, the porous portion 11B as well as the core portion 11A are electrically connected to the first through-hole conductor 71.

[0083] When viewed in the thickness direction, it is preferable that the first through-hole conductor 71 is electrically connected to the anode plate 11 over the entire circumference of the first through hole 81. In this case, the connection resistance between the anode plate 11 and the first through-hole conductor 71 is likely to decrease, and therefore the equivalent series resistance (ESR) of the capacitor element 10 is likely to decrease.

[0084] The first through-hole conductor 71 is formed, for example, as follows. First, a first through hole 81 penetrating the capacitor section 20 and the sealing layer 30 in the thickness direction is formed by performing drilling, laser processing, or the like. Then, the inner wall surface of the first through hole 81 is metallized with a metal material containing a low-resistance metal such as copper, gold, or silver, to form the first through-hole conductor 71. When forming the first through-hole conductor 71, for example, the inner wall surface of the first through hole 81 is metallized by electroless copper plating, electrolytic copper plating, or the like, to facilitate processing. Note that the method of forming the first through-hole conductor 71 may be a method of filling the first through hole 81 with a metal material, a composite material of metal and resin, or the like, in addition to a method of metallizing the inner wall surface of the first through hole 81.

[0085] An anode connection layer may be provided between the anode plate 11 and the first through-hole conductor 71 in the planar direction. That is, the anode plate 11 and the first through-hole conductor 71 may be electrically connected via the anode connection layer.

[0086] Since the anode connection layer is provided between the anode plate 11 and the first through-hole conductor 71 in the surface direction, the anode connection layer functions as a barrier layer for the anode plate 11, more specifically, as a barrier layer for the core portion 11A and the porous portion 11B. When the anode connection layer functions as a barrier layer for the anode plate 11, dissolution of the anode plate 11 that occurs during chemical treatment for forming the external electrode layer 50 (e.g., the first external electrode layer 51) is suppressed, and thus infiltration of the chemical solution into the capacitor portion 20 is suppressed, which tends to improve the reliability of the capacitor array 1.

[0087] The anode connecting layer preferably includes a layer mainly composed of nickel. In this case, damage to the metal (e.g., aluminum) constituting the anode plate 11 is reduced, and the barrier property of the anode connecting layer against the anode plate 11 is easily improved.

[0088] In addition, in the planar direction, an anode connection layer does not have to be provided between the anode plate 11 and the first through-hole conductor 71. In this case, the first through-hole conductor 71 may be directly connected to the end surface of the anode plate 11.

[0089] When the first through-hole conductor 71 is provided only on the inner wall surface of the first through hole 81, the first through hole 81 may be provided with a resin filled portion filled with a resin material. In this case, the resin filled portion is provided in the space surrounded by the first through-hole conductor 71 in the first through hole 81. When the space in the first through hole 81 is eliminated by providing the resin filled portion, the occurrence of delamination of the first through-hole conductor 71 is suppressed.

[0090] The first external electrode layer 51 is electrically connected to the first electrode layer (e.g., anode plate 11) of the capacitor element 10. In the example shown in Fig. 1, the first external electrode layer 51 is provided on the surface of the first through-hole conductor 71, and functions as a connection terminal of the capacitor array 1 (capacitor element 10). In the example shown in Fig. 1, the first external electrode layer 51 is electrically connected to the anode plate 11 via the first through-hole conductor 71, and functions as a connection terminal for the anode plate 11.

[0091] Examples of the constituent material of the first external electrode layer 51 include metal materials containing low-resistance metals such as silver, gold, copper, etc. In this case, the first external electrode layer 51 is formed by, for example, plating the surfaces of the first through-hole conductors 71.

[0092] In order to improve the adhesion between the first external electrode layer 51 and other components, in this case, between the first external electrode layer 51 and the first through-hole conductor 71, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler and resin may be used as a constituent material of the first external electrode layer 51.

[0093] The second through-hole conductor 72 penetrates the capacitor portion 20 and the sealing layer 30 in the thickness direction.

[0094] The second through-hole conductor 72 may be provided on at least the inner wall surface of the second through hole 82 that penetrates the capacitor portion 20 and the sealing layer 30 in the thickness direction. The second through-hole conductor 72 may be provided only on the inner wall surface of the second through hole 82, or may be provided throughout the entire interior of the second through hole 82.

[0095] The second through-hole conductor 72 is formed, for example, as follows. First, a through hole penetrating the capacitor section 20 in the thickness direction is formed by performing drilling, laser processing, or the like. Next, the above-mentioned through hole is filled with an insulating material. The part filled with the insulating material is subjected to drilling, laser processing, or the like to form the second through hole 82. At this time, the diameter of the second through hole 82 is made smaller than the diameter of the through hole filled with the insulating material, so that the insulating material is present between the inner wall surface of the previously formed through hole and the inner wall surface of the second through hole 82 in the surface direction. Thereafter, the inner wall surface of the second through hole 82 is metallized with a metal material containing a low-resistance metal such as copper, gold, or silver, thereby forming the second through-hole conductor 72. When forming the second through-hole conductor 72, for example, the inner wall surface of the second through hole 82 is metallized with electroless copper plating, electrolytic copper plating, or the like to facilitate processing. In addition, the method of forming the second through-hole conductor 72 may be a method of filling the second through hole 82 with a metal material, a composite material of metal and resin, or the like, in addition to a method of metallizing the inner wall surface of the second through hole 82.

[0096] When the second through-hole conductor 72 is provided only on the inner wall surface of the second through hole 82, the second through hole 82 may be provided with a resin filled portion filled with a resin material. In this case, the resin filled portion is provided in the space surrounded by the second through-hole conductor 72 in the second through hole 82. When the space in the second through hole 82 is eliminated by providing the resin filled portion, the occurrence of delamination of the second through-hole conductor 72 is suppressed.

[0097] The second external electrode layer 52 is electrically connected to the second electrode layer (e.g., the cathode layer 12) of the capacitor element 10. In the example shown in Fig. 1, the second external electrode layer 52 is provided on the surface of the second through-hole conductor 72, and functions as a connection terminal of the capacitor array 1 (capacitor element 10).

[0098] Examples of the constituent material of the second external electrode layer 52 include metal materials containing low-resistance metals such as silver, gold, copper, etc. In this case, the second external electrode layer 52 is formed by, for example, plating the surfaces of the second through-hole conductors 72.

[0099] In order to improve the adhesion between the second external electrode layer 52 and other components, in this case, between the second external electrode layer 52 and the second through-hole conductor 72, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler, and carbon filler and a resin may be used as a constituent material of the second external electrode layer 52.

[0100] The constituent materials of the first external electrode layer 51 and the second external electrode layer 52 are preferably the same as each other at least in terms of type, but may be different from each other.

[0101] In the example shown in FIG. 1, each of the multiple capacitor elements 10 is provided with a first external electrode layer 51 electrically connected to the anode plate 11 and a second external electrode layer 52 electrically connected to the cathode layer 12, but at least one of the first external electrode layer 51 and the second external electrode layer 52 may be provided in common among the multiple capacitor elements 10.

[0102] In the example shown in FIG. 1, the first external electrode layer 51 and the second external electrode layer 52 are provided on both main surfaces of the sealing layer 30, but they may be provided on only one of the main surfaces of the sealing layer 30.

[0103] Although not shown in FIG. 1, the through-hole conductor 70 may include a third through-hole conductor that is not electrically connected to the first electrode layer (e.g., anode plate 11) and the second electrode layer (e.g., cathode layer 12) of the capacitor element 10.

[0104] The capacitor array 1 preferably further includes via conductors 90 as shown in FIG.

[0105] The via conductor 90 penetrates the sealing layer 30 in the thickness direction, and is connected to the cathode layer 12 and the second external electrode layer 52 .

[0106] Examples of materials that can be used to form the via conductors 90 include metal materials that contain low-resistance metals such as silver, gold, and copper.

[0107] The via conductor 90 is formed, for example, by plating the inner wall surface of a through hole that penetrates the sealing layer 30 in the thickness direction with the above-mentioned metal material, or by filling it with a conductive paste and then performing a heat treatment.

[0108] In the example shown in FIG. 1, the second through-hole conductor 72 is electrically connected to the cathode layer 12 via the second external electrode layer 52 and a via conductor 90 .

[0109] In the example shown in FIG. 1, the second external electrode layer 52 is electrically connected to the cathode layer 12 through a via conductor 90 and functions as a connection terminal for the cathode layer 12 .

[0110] When the capacitor array 1 includes the through-hole conductors 70 , the capacitor element 10 preferably further includes an insulating layer 35 provided around the through-hole conductors 70 on at least one of the main surfaces of the anode plate 11 .

[0111] 1 and 2, an insulating layer 35 is provided between the first through-hole conductor 71 and the cathode layer 12. In addition, in the example shown in Figures 1 and 2, an insulating material such as a sealing layer 30 is filled between the second through-hole conductor 72 and the capacitor element 10, and the insulating layer 35 is provided between this insulating material and the cathode layer 12.

[0112] 1 and 2, the capacitor element 10 may further include an insulating layer provided on at least one main surface of the anode plate 11 so as to surround the periphery of the cathode layer 12. By surrounding the periphery of the cathode layer 12 with the insulating layer, insulation between the anode plate 11 and the cathode layer 12 is ensured, and a short circuit between them is prevented.

[0113] The insulating layer may be provided so as to surround a part of the periphery of the cathode layer 12, but is preferably provided so as to surround the entire periphery of the cathode layer 12.

[0114] The insulating layers such as the insulating layer 35 are made of an insulating material. In this case, the insulating layer is preferably made of an insulating resin.

[0115] Examples of insulating resins constituting insulating layers such as insulating layer 35 include polyphenylsulfone resins, polyethersulfone resins, cyanate ester resins, fluororesins (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkylvinyl ether copolymers, etc.), polyimide resins, polyamideimide resins, epoxy resins, and derivatives or precursors thereof.

[0116] An insulating layer such as insulating layer 35 may be made of the same resin as sealing layer 30. Unlike sealing layer 30, if an insulating layer contains an inorganic filler, it may adversely affect the effective capacitance portion of capacitor element 10, so that the insulating layer is preferably made of a resin alone.

[0117] An insulating layer such as insulating layer 35 can be formed in a predetermined area by applying a mask material, such as a composition containing an insulating resin, to the surface of porous portion 11B by a method such as sponge transfer, screen printing, dispenser application, inkjet printing, or the like.

[0118] An insulating layer such as the insulating layer 35 may be formed on the porous portion 11B before the dielectric layer 13 is formed, or may be formed after the dielectric layer 13 is formed.

[0119] The capacitor array 1 shown in FIGS. 1 and 2 can be manufactured, for example, by the following method.

[0120] Fig. 5 is a plan view and Fig. 6 is a cross-sectional view showing an example of a process for preparing a capacitor array sheet.

[0121] In the steps shown in FIGS. 5 and 6, a capacitor array sheet 100 is prepared, in which a cathode layer 12 is provided in a predetermined area of ​​an anode plate 11.

[0122] First, an anode plate 11 made of a valve metal is prepared. As shown in FIG. 6, a dielectric layer 13 is provided on at least one of the main surfaces of the anode plate 11.

[0123] For example, an anode plate 11 having a core portion 11A and a porous portion 11B provided on at least one main surface thereof is anodized to form a dielectric layer 13 on the surface of the porous portion 11B.

[0124] Alternatively, a chemically formed foil may be prepared as the anode plate 11 having the dielectric layer 13 provided on the surface of the porous portion 11B.

[0125] Although not shown in Figures 5 and 6, in order to divide the regions of individual capacitor elements 10 (see Figures 1 and 2), an insulating layer may be formed in a predetermined region, for example, by applying an insulating resin to the surface of the dielectric layer 13 by a method such as screen printing or dispenser application.

[0126] If necessary, an insulating layer 35 (see FIGS. 1 and 2) may be formed in the region where the through-hole conductor 70 (see FIGS. 1 and 2) is to be formed.

[0127] Next, for example, solid electrolyte layer 12A is formed on the surface of dielectric layer 13, and then conductor layer 12B is formed on the surface of solid electrolyte layer 12A. In this way, cathode layer 12 is formed.

[0128] Fig. 7 is a plan view that illustrates an example of a process for cutting the capacitor array sheet, and Fig. 8 is a cross-sectional view that illustrates an example of a process for cutting the capacitor array sheet.

[0129] 7 and 8, capacitor array sheet 100 is cut to form through grooves 110, thereby dividing it into individual capacitor elements 10. Furthermore, the outer periphery of the portion to become the product (see FIGS. 13 and 14) is removed to form slits 120.

[0130] Examples of methods for forming the through groove 110 and the slit 120 include laser processing, dicing processing, and the like. The method for forming the through groove 110 may be the same as or different from the method for forming the slit 120. The order in which the through groove 110 and the slit 120 are formed is not particularly limited.

[0131] Fig. 9 is a plan view diagrammatically showing an example of a step of arranging a built-in member, and Fig. 10 is a cross-sectional view diagrammatically showing an example of a step of arranging a built-in member.

[0132] 9 and 10, the embedded member 40 is placed inside the slit 120. For example, an insulating material having a higher melting temperature than the insulating material constituting the sealing layer 30 is poured into the slit 120.

[0133] Fig. 11 is a plan view diagrammatically illustrating an example of a step of thermocompression bonding an insulating resin sheet, and Fig. 12 is a cross-sectional view diagrammatically illustrating an example of a step of thermocompression bonding an insulating resin sheet.

[0134] 11 and 12, for example, insulating resin sheets 130 are thermocompression bonded to both main surfaces of capacitor array sheet 100. At this time, through grooves 110 are filled with insulating resin.

[0135] Fig. 13 is a plan view and Fig. 14 is a cross-sectional view showing an example of a process for singulating into capacitor arrays.

[0136] 13 and 14, the capacitor array sheet 100 and the insulating resin sheet 130 are cut along the cutting lines CL shown in Figures 11 and 12 to separate into capacitor arrays 1. At this time, the cutting may be performed in the planar direction so that the built-in members 40 are exposed from the sealing layer 30, or may not be performed so that the built-in members 40 are not exposed. Also, when the built-in members 40 are exposed from the sealing layer 30, the cutting may be performed above the built-in members 40.

[0137] Thereafter, the external electrode layer 50, the through-hole conductors 70, and the via conductors 90 are formed as necessary, thereby completing the manufacture of the capacitor array 1 shown in FIGS.

[0138] FIG. 15 is a cross-sectional view showing a schematic modification of the arrangement of the external electrode layers.

[0139] As in a capacitor array 1A shown in FIG. 15, the external electrode layer 50 may be provided directly above the built-in member 40 in the thickness direction.

[0140] FIG. 16 is a plan view showing a schematic example of an arrangement of built-in members.

[0141] In the example shown in FIG. 16, the built-in member 40A is disposed continuously over the entire outermost periphery of the product portion.

[0142] FIG. 17 is a plan view illustrating a first modified example of the arrangement of the built-in members.

[0143] In the example shown in Fig. 17, the built-in member 40B is not disposed in a part of the outermost periphery of the product part. In Fig. 17, the built-in member 40B is not disposed in the four corners, but the built-in member 40B may not be disposed in at least one corner.

[0144] FIG. 18 is a plan view that illustrates a second modified example of the arrangement of the built-in components.

[0145] In the example shown in Fig. 18, the built-in components 40C are arranged at intervals on the outermost circumference of the product part. The intervals between the built-in components 40C may be the same as each other, may be different from each other, or may be partially different. In Fig. 18, the built-in components 40C are not arranged at the four corners, but it is also possible that the built-in components 40C are not arranged at at least one corner.

[0146] FIG. 19 is a plan view that illustrates a third modified example of the arrangement of the built-in components.

[0147] 19, the built-in components 40D are arranged along the outermost periphery of the product portion, and are arranged inside the outermost periphery of the product portion. In this case, the built-in components 40D may be arranged continuously, may not be arranged in some places, or may be arranged at intervals.

[0148] FIG. 20 is a plan view that illustrates a fourth modified example of the arrangement of the built-in components.

[0149] In the example shown in Fig. 20, the built-in member 40E is arranged along the outer shape of the product part. In this case, the built-in member 40E may be arranged continuously, may not be arranged in a part, or may be arranged at intervals. Furthermore, the built-in member 40E may be arranged inside the outermost periphery of the product part along the outer shape of the product part.

[0150] [Second embodiment] In the capacitor array according to the second embodiment of the present invention, the built-in member includes the same structure as the capacitor element.

[0151] FIG. 21 is a cross-sectional view illustrating a schematic example of a capacitor array according to a second embodiment of the present invention.

[0152] In capacitor array 2 shown in Fig. 21, built-in member 41 has the same configuration as capacitor element 10, and is electrically insulated from capacitor section 20 at a position away from capacitor section 20. Capacitor array 2 shown in Fig. 21 has a common configuration with capacitor array 1 shown in Fig. 1, except that built-in member 41 is provided instead of built-in member 40.

[0153] In capacitor array 2, built-in member 41 has the same configuration as capacitor element 10, so there is no need to prepare a separate material as in built-in member 40, which has a different configuration from capacitor element 10. Therefore, capacitor array 2 can be easily manufactured.

[0154] 21 , built-in member 41 has the same configuration as anode plate 11, and is electrically insulated from capacitor portion 20 at a position away from capacitor portion 20. Therefore, built-in member 41 has a higher melting temperature than sealing layer 30.

[0155] The built-in member 41 preferably has a core 11A made of metal and a porous portion 11B provided on at least one main surface of the core 11A, similar to the anode plate 11. A dielectric layer 13 may be provided on the surface of the porous portion 11B.

[0156] As shown in Fig. 21, built-in member 41 is disposed on the outer periphery in the planar direction of capacitor section 20. As shown in Fig. 21, built-in member 41, together with capacitor section 20, is preferably sealed by sealing layer 30 from both sides opposing each other in the thickness direction.

[0157] The built-in member 41 is spaced apart from the capacitor section 20. An insulating material such as the sealing layer 30 is preferably filled between the built-in member 41 and the capacitor section 20.

[0158] The width between built-in component 41 and capacitor section 20 is not particularly limited, but is preferably 15 μm or more, more preferably 30 μm or more, and even more preferably 50 μm or more. On the other hand, the width between built-in component 41 and capacitor section 20 is preferably 500 μm or less, more preferably 200 μm or less, and even more preferably 150 μm or less. The width between built-in component 41 and capacitor section 20 may be the same as the distance between adjacent capacitor elements 10, may be smaller than the distance between adjacent capacitor elements 10, or may be larger than the distance between adjacent capacitor elements 10.

[0159] The built-in member 41 may or may not be exposed from the sealing layer 30 in the planar direction. On the other hand, it is preferable that the built-in member 41 is not exposed from the sealing layer 30 in the thickness direction.

[0160] The height (dimension in the thickness direction) of the built-in member 41 is not particularly limited, but when the anode plate 11 and the built-in member 41 are produced from the capacitor array sheet 100 by the method described below, it is preferable that the height of the built-in member 41 is equivalent to the thickness of the anode plate 11. Here, "equivalent" does not have to be strictly the same, and it is sufficient if it is within a substantially equivalent range, for example, within a range of a few percent.

[0161] The width (dimension in the planar direction) of the built-in member 41 is not particularly limited, but is preferably 15 μm or more, more preferably 30 μm or more, and even more preferably 50 μm or more. On the other hand, the width of the built-in member 41 is preferably 500 μm or less, more preferably 200 μm or less, and even more preferably 150 μm or less. The width of the built-in member 41 may be the same as the interval between adjacent capacitor elements 10, may be smaller than the interval between adjacent capacitor elements 10, or may be larger than the interval between adjacent capacitor elements 10. In addition, the width of the built-in member 41 may be the same as the width between the built-in member 41 and the capacitor section 20, may be smaller than the width between the built-in member 41 and the capacitor section 20, or may be larger than the width between the built-in member 41 and the capacitor section 20.

[0162] From the viewpoint of making the thickness of the entire capacitor array 2 closer to uniform, it is preferable that the proportion of the area occupied by the built-in member 41 is large, but on the other hand, if the proportion occupied by the built-in member 41 becomes too large, the proportion occupied by the capacitor element 10 will become small. For the above reasons, in a plan view from the thickness direction, the proportion of the area of ​​the built-in member 41 to the area of ​​the entire capacitor array 2 is preferably 0.1% or more and 10% or less.

[0163] The capacitor array 2 shown in FIG. 21 can be manufactured, for example, by the following method.

[0164] Figure 22 is a plan view that illustrates an example of a process for preparing a capacitor array sheet, and Figure 23 is a cross-sectional view that illustrates an example of a process for preparing a capacitor array sheet.

[0165] 22 and 23, similarly to the steps shown in FIGS. 5 and 6, a capacitor array sheet 100 having a cathode layer 12 provided in a predetermined region of an anode plate 11 is prepared.

[0166] Figure 24 is a plan view that illustrates an example of a process for cutting the capacitor array sheet, and Figure 25 is a cross-sectional view that illustrates an example of a process for cutting the capacitor array sheet.

[0167] 24 and 25, capacitor array sheet 100 is cut to form through grooves 110, thereby dividing it into individual capacitor elements 10. Furthermore, the inside of the outer periphery of the part to be the product (see FIGS. 28 and 29) is removed to form slits 120.

[0168] Examples of methods for forming the through groove 110 and the slit 120 include laser processing, dicing processing, and the like. The method for forming the through groove 110 may be the same as or different from the method for forming the slit 120. The order in which the through groove 110 and the slit 120 are formed is not particularly limited.

[0169] Fig. 26 is a plan view diagrammatically illustrating an example of a step of thermocompression bonding an insulating resin sheet, and Fig. 27 is a cross-sectional view diagrammatically illustrating an example of a step of thermocompression bonding an insulating resin sheet.

[0170] 26 and 27, for example, insulating resin sheets 130 are thermocompression bonded to both main surfaces of capacitor array sheet 100. At this time, through grooves 110 and slits 120 are filled with insulating resin.

[0171] Figure 28 is a plan view and Figure 29 is a cross-sectional view showing an example of a process for singulating into capacitor arrays.

[0172] 28 and 29, the capacitor array sheet 100 and the insulating resin sheet 130 are cut along cutting lines CL shown in Fig. 26 and 27 to separate into capacitor arrays 2. As a result, a part of the anode plate 11 remains as a built-in member 41 on the outer periphery of the product portion. It is preferable that the built-in member 41 is exposed from the sealing layer 30 in the surface direction.

[0173] FIG. 30 is a plan view illustrating another example of a process for singulating into capacitor arrays.

[0174] After insulating resin sheets 130 (not shown) are thermocompression-bonded to both main surfaces of capacitor array sheet 100 in the state shown in Fig. 30, capacitor array sheet 100 and insulating resin sheet 130 may be cut along cutting lines CL shown in Fig. 30. In this case, since built-in members 41 (see Fig. 28) are shared between adjacent capacitor arrays 2, multiple capacitor arrays 2 can be manufactured by cutting once.

[0175] Thereafter, the external electrode layers 50, the through-hole conductors 70, and the via conductors 90 are formed as necessary, thereby completing the manufacture of the capacitor array 2 shown in FIG.

[0176] In the capacitor array 2 shown in FIG. 21, the external electrode layer 50 may be provided directly above the built-in member 41 in the thickness direction, as in the capacitor array 1A shown in FIG.

[0177] In the example shown in FIG. 21, each of the multiple capacitor elements 10 is provided with a first external electrode layer 51 electrically connected to the anode plate 11 and a second external electrode layer 52 electrically connected to the cathode layer 12, but at least one of the first external electrode layer 51 and the second external electrode layer 52 may be provided in common among the multiple capacitor elements 10.

[0178] FIG. 31 is a cross-sectional view illustrating a schematic diagram of another example of the capacitor array according to the second embodiment of the present invention.

[0179] 31, the width between built-in member 41 and capacitor section 20 is reduced in the thickness direction. The other configuration is the same as that of capacitor array 2 shown in FIG.

[0180] The width between built-in component 41 and capacitor section 20 may be constant in the thickness direction as shown in Fig. 21, or may decrease in the thickness direction as shown in Fig. 31. As shown in Fig. 31, if the width between built-in component 41 and capacitor section 20 decreases in the thickness direction, and the portion between built-in component 41 and capacitor section 20 is tapered, it becomes easier to fill with insulating material such as sealing layer 30.

[0181] [Other embodiments] The capacitor array of the present invention is not limited to the above embodiment, so long as the built-in member having a higher melting temperature than the sealing layer is disposed on the outer periphery of the capacitor section in the planar direction. Therefore, various applications and modifications can be made within the scope of the present invention with respect to the configuration and manufacturing conditions of the capacitor array.

[0182] In the capacitor array of the present invention, the capacitor elements are not limited to electrolytic capacitors such as solid electrolytic capacitors. In the capacitor array of the present invention, the capacitor elements may be, for example, ceramic capacitors using barium titanate, thin film capacitors using silicon nitride (SiN), silicon dioxide (SiO2), hydrogen fluoride (HF), or the like, trench capacitors having a MIM (Metal Insulator Metal) structure, or the like.

[0183] In the capacitor array of the present invention, from the viewpoints of making the capacitor section thinner and larger in area, and improving the mechanical properties of the capacitor section, such as rigidity and flexibility, it is preferable that the capacitor element constitute a capacitor having a base material of a metal such as aluminum, and it is even more preferable that the capacitor element constitute an electrolytic capacitor having a base material of a metal such as aluminum.

[0184] The capacitor array of the present invention is used, for example, in a composite electronic component. Such a composite electronic component includes, for example, the capacitor array of the present invention and an electronic component electrically connected to the external electrode layer of the capacitor array of the present invention.

[0185] In a composite electronic component, the electronic component electrically connected to the external electrode layer may be a passive element, an active element, both a passive element and an active element, or a composite of a passive element and an active element.

[0186] An example of the passive element is an inductor.

[0187] Examples of active elements include memories, GPUs (Graphical Processing Units), CPUs (Central Processing Units), MPUs (Micro Processing Units), and PMICs (Power Management ICs).

[0188] When the capacitor array of the present invention is used in a composite electronic component, the capacitor array of the present invention is treated as, for example, a substrate for mounting electronic components. Therefore, by forming the capacitor array of the present invention as a whole in a sheet shape and further forming the electronic components to be mounted on the capacitor array of the present invention in a sheet shape, it becomes possible to electrically connect the capacitor array of the present invention and the electronic components in the thickness direction via through-hole conductors that penetrate the electronic components in the thickness direction. As a result, it becomes possible to configure the passive elements and active elements as electronic components as a single module.

[0189] For example, a switching regulator can be formed by electrically connecting the capacitor array of the present invention between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied.

[0190] In a composite electronic component, a circuit layer may be formed on one main surface of a capacitor matrix sheet on which a plurality of capacitor arrays of the present invention are laid out, and the circuit layer may then be electrically connected to passive or active elements serving as electronic components.

[0191] Alternatively, the capacitor array of the present invention may be placed in a cavity previously provided in a substrate, embedded in resin, and then a circuit layer may be formed on the resin. Another cavity in the same substrate may be equipped with a passive or active element as another electronic component.

[0192] Alternatively, the capacitor array of the present invention may be mounted on a smooth carrier such as a wafer or glass, an outer layer made of resin may be formed, a circuit layer may be formed, and the circuit layer may be electrically connected to passive or active elements as electronic components.

[0193] The present specification discloses the following:

[0194] <1> a capacitor section including a plurality of capacitor elements arranged in a plane direction perpendicular to a thickness direction, the capacitor elements being separated from each other; a sealing layer that seals the capacitor portion; a built-in member disposed inside the sealing layer together with the capacitor portion, Each of the capacitor elements includes a first electrode layer, a second electrode layer, and a dielectric layer, the first electrode layer and the second electrode layer facing each other in the thickness direction via the dielectric layer, The built-in member has a higher melting temperature than the sealing layer, and is disposed on the outer periphery of the capacitor portion in the planar direction.

[0195] <2> the built-in member has the same configuration as the capacitor element, and is located away from the capacitor portion and electrically insulated from the capacitor portion; <1> The capacitor array according to claim 1 .

[0196] <3> The width between the built-in member and the capacitor portion decreases in the thickness direction. <1> or <2> The capacitor array according to claim 1 .

[0197] <4> The built-in member is exposed from the sealing layer in the surface direction. <1> ~ <3> 13. A capacitor array according to claim 12,

[0198] <5> the first electrode layer is an anode plate having a core made of a metal and a porous portion provided on at least one main surface of the core; the dielectric layer is provided on a surface of the porous portion, The second electrode layer is a cathode layer provided on a surface of the dielectric layer. <1> ~ <4> 13. A capacitor array according to claim 12,

[0199] <6> The cathode layer includes a solid electrolyte layer provided on a surface of the dielectric layer. <5> The capacitor array according to claim 1 .

[0200] <7> The height of the built-in member is equal to the thickness of the anode plate. <5> or <6> The capacitor array according to claim 1 .

[0201] <8> The built-in member has the same configuration as the anode plate, and is located away from the capacitor unit and electrically insulated from the capacitor unit. <5> ~ <7> 13. A capacitor array according to claim 12,

[0202] <9> The width between the built-in member and the capacitor portion decreases in the thickness direction. <5> ~ <8> 13. A capacitor array according to claim 12,

[0203] <10> The built-in member is exposed from the sealing layer in the surface direction. <5> ~ <9> 13. A capacitor array according to claim 12, [Explanation of symbols]

[0204] 1, 1a, 1A, 2, 2A Capacitor Array 10 Capacitor element 11 Anode plate (first electrode layer) 11A core 11B Porous part 12 Cathode layer (second electrode layer) 12A solid electrolyte layer 12B Conductive layer 13 Dielectric layer 20 Capacitor section 30 Sealing layer 35 Insulating layer 40, 40A, 40B, 40C, 40D, 40E, 41 Built-in parts 50 External electrode layer 51 1st external electrode layer 52 Second external electrode layer 60 Embedded resin layer 70 Through-hole conductor 71 First through hole conductor 72 Second through hole conductor 81 First through hole 82 Second Through Hole 90 Via conductor 100 Capacitor array sheet 110 Through groove 120 Slit 130 Insulating resin sheet CL cutting line

Claims

1. a capacitor section including a plurality of capacitor elements arranged in a plane direction perpendicular to a thickness direction, the capacitor elements being separated from each other; a sealing layer that seals the capacitor portion; a built-in member disposed inside the sealing layer together with the capacitor portion, Each of the capacitor elements includes a first electrode layer, a second electrode layer, and a dielectric layer, the first electrode layer and the second electrode layer facing each other in the thickness direction via the dielectric layer, the built-in member has a melting temperature higher than that of the sealing layer and is disposed on an outer periphery of the capacitor portion in the planar direction, A capacitor array, wherein the built-in member has the same configuration as the capacitor element, and is located away from the capacitor portion and electrically insulated from the capacitor portion.

2. a capacitor section including a plurality of capacitor elements arranged in a plane direction perpendicular to a thickness direction, the capacitor elements being separated from each other; a sealing layer that seals the capacitor portion; a built-in member disposed inside the sealing layer together with the capacitor portion, Each of the capacitor elements includes a first electrode layer, a second electrode layer, and a dielectric layer, the first electrode layer and the second electrode layer facing each other in the thickness direction via the dielectric layer, the built-in member has a melting temperature higher than that of the sealing layer and is disposed on an outer periphery of the capacitor portion in the planar direction, the first electrode layer is an anode plate having a core portion made of a metal and a porous portion provided on at least one main surface of the core portion; the dielectric layer is provided on a surface of the porous portion, the second electrode layer is a cathode layer provided on a surface of the dielectric layer, A capacitor array, wherein the built-in member has the same configuration as the anode plate, and is located away from the capacitor portion and electrically insulated from the capacitor portion.

3. The capacitor array of claim 2 , wherein the cathode layer includes a solid electrolyte layer disposed on a surface of the dielectric layer.

4. The capacitor array of claim 2 , wherein the height of the built-in member is equal to the thickness of the anode plate.

5. a capacitor section including a plurality of capacitor elements arranged in a plane direction perpendicular to a thickness direction, the capacitor elements being separated from each other; a sealing layer that seals the capacitor portion; a built-in member disposed inside the sealing layer together with the capacitor portion, Each of the capacitor elements includes a first electrode layer, a second electrode layer, and a dielectric layer, the first electrode layer and the second electrode layer facing each other in the thickness direction via the dielectric layer, the built-in member has a melting temperature higher than that of the sealing layer and is disposed on an outer periphery of the capacitor portion in the planar direction, The first electrode layer includes a core portion made of a metal, A capacitor array, wherein the built-in member has the same configuration as the core portion and is electrically insulated from the capacitor portion at a position spaced apart from the capacitor portion.

6. 6. The capacitor array according to claim 1, wherein a width between said built-in member and said capacitor portion decreases in said thickness direction.

7. 6. The capacitor array according to claim 1, wherein the built-in member is exposed from the sealing layer in the planar direction.

Citation Information

Patent Citations

  • Capacitor built-in wiring board and manufacturing method thereof

    JP2008078301A

  • Wiring board having built-in electronic component

    JP2009252764A

  • Electrolytic capacitor and manufacturing method for the same

    JP2017017122A

  • Capacitor array and composite electronic component

    JP2020167361A

  • Solid-state electrolytic capacitor

    WO2019221046A1