Method for controlling a drawing device and drawing device

Abstract

To provide a control method of a drawing device capable of preventing a scattering beam from applying an influence to drawing processing, and provide a drawing device.SOLUTION: A drawing device draws a predetermined pattern on an irradiation object by irradiating a predetermined position of the irradiation object with a multi-electric charge beam. The drawing device comprises: a beam generation mechanism that generates the multi-electric charge beam; a blanking aperture mechanism that comprises a limitation aperture board for shielding the generated multi-electric charge beam and a deflector for deflecting the multi-electric charge beam to a predetermined direction, and performs braking of the multi-electric charge beam; a stage on which the irradiation object is mounted and which can be moved; a driving part that moves the limitation aperture board; and a control part that controls the drawing device. The control part moves the limit aperture board within a plane vertical to an axial direction of the multi-electric charge beam in a period of the blanking.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present embodiment relates to a control method for a drawing apparatus and a drawing apparatus. [Background technology]

[0002] The lithography system irradiates a mask blank with a charged particle beam emitted from an electron gun to expose a photosensitive material on the mask blank to a desired pattern. In the lithography system, the charged particle beam is passed through an aperture array to generate the desired multi-beam.

[0003] In order to make the scattered beam negligible, it is possible to narrow the gap between the blanker electrodes and to largely deflect the multi-beams. However, if the gap between the blanker electrodes is made too narrow, problems such as the multi-beams being irradiated onto the electrodes arise. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2006-140267 A [Patent Document 2] JP 2020-136289 A [Patent Document 3] JP 2017-098429 A [Patent Document 4] Japanese Patent Application Publication No. 02-285629 Summary of the Invention [Problem to be solved by the invention]

[0005] When generating the multi-beams, the charged particle beam is also irradiated onto the side walls of the aperture, etc., and a large amount of electrons are scattered from the side walls of the aperture, generating a leakage beam. A blanking aperture mechanism is provided downstream of the molded aperture array to individually or collectively control the irradiation of the multi-beams. However, the leakage beam cannot be controlled by these mechanisms, and may be irradiated onto the mask blanks. In this case, the photosensitive material on the mask blanks may be unintentionally exposed by the leakage beam.

[0006] That is, this embodiment provides a control method for a drawing apparatus and a drawing apparatus capable of suppressing the influence of such a leak beam on the drawing process. [Means for solving the problem]

[0007] The drawing apparatus according to this embodiment is a drawing apparatus that draws a predetermined pattern on an irradiation target by irradiating a multi-charged particle beam to a predetermined position on the irradiation target, and is equipped with a beam generation mechanism that generates a multi-charged particle beam, a limiting aperture substrate that shields the generated multi-charged particle beam, and a deflector that deflects the multi-charged particle beam in a predetermined direction, a blanking aperture mechanism that blanks the multi-charged particle beam, a movable stage on which the irradiation target is placed, a drive unit that moves the limiting aperture substrate, and a control unit that controls the drawing apparatus, and the control unit moves the limiting aperture substrate in a plane perpendicular to the axial direction of the multi-charged particle beam during the blanking period.

[0008] The drawing method according to this embodiment is a drawing method for drawing a predetermined pattern on an irradiation target by irradiating a multi-charged particle beam to a predetermined position on the irradiation target, which involves generating a multi-charged particle beam, deflecting the generated multi-charged particle beam in a predetermined direction and blanking the multi-charged particle beam by a limiting aperture substrate, and moving the limiting aperture substrate in a plane perpendicular to the axial direction of the multi-charged particle beam during the blanking period. [Brief description of the drawings]

[0009] [Figure 1] FIG. 1 is a diagram showing an example of the arrangement of a drawing apparatus according to a first embodiment. [Figure 2A] FIG. 1 is a conceptual diagram showing a state of a drawing apparatus when the beam is ON. [Figure 2B] FIG. 13 is a conceptual diagram showing a state of the drawing apparatus when the beam is off. [Diagram 3] FIG. 11 is a flowchart showing a method for controlling the drawing apparatus in a soaking process. [Figure 4] FIG. 11 is a flow diagram showing a method for controlling the drawing device in the Z map measurement process. [Diagram 5] FIG. 4 is a flow diagram showing a method for controlling the drawing device during drawing processing. [Figure 6] 1 is a conceptual diagram showing multi-beam scanning in a drawing process. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The present invention is not limited to this embodiment. The drawings are schematic or conceptual, and the ratio of each part is not necessarily the same as the actual one. In the specification and drawings, elements similar to those described above with respect to the previous drawings are given the same reference numerals, and detailed descriptions are omitted as appropriate.

[0011] (First embodiment) 1 is a diagram showing an example of the configuration of a drawing apparatus according to the first embodiment. The drawing apparatus 100 is, for example, a multi-beam type charged particle beam exposure apparatus, and is used to draw a lithography photomask or template used in manufacturing a semiconductor device. In addition to the drawing apparatus, this embodiment may also be an exposure apparatus, an electron microscope, or other apparatus that irradiates a sample W with an electron beam or an ion beam. Therefore, the sample W to be processed may be a semiconductor substrate or the like in addition to a mask blank.

[0012] The drawing apparatus 100 includes a drawing unit 150 and a control unit 160. The drawing unit 150 includes an electron lens barrel 102 and a drawing chamber 103. The control unit 160 includes an irradiation control unit 4, a stage control unit 5, a stage position measurement device 7, a logic circuit 131, a DAC amplifier 134, and a limiting aperture control unit 135.

[0013] Arranged within the electron barrel 102 are an electron gun 201, an illumination lens 202, a shaping aperture array substrate 203, a blanking aperture array substrate 204, a reduction lens 205, a limiting aperture substrate 206, an objective lens 207, a main deflector 208, a sub-deflector 209, a blanking deflector 212, and a limiting aperture drive unit 136.

[0014] A stage 105 movable in mutually orthogonal X and Y directions (substantially horizontal directions) is disposed in a writing chamber 103. A sample W such as a mask blank to be irradiated with the multi-beam during writing can be placed on the stage 105. The sample W is, for example, a mask blank in which a light-shielding film such as a chromium film and a resist film are laminated on a glass substrate. A mirror 210 is disposed on the stage 105 to measure the position of the stage 105. The insides of the electron lens barrel 102 and the writing chamber 103 are evacuated and are in a reduced pressure state.

[0015] The electron gun 201 as a beam irradiation unit generates a charged particle beam B0. The charged particle beam B0 is, for example, an electron beam or an ion beam. The charged particle beam B0 generated by the electron gun 201 is irradiated onto a sample W.

[0016] The shaping aperture array substrate 203 has a plurality of apertures 30 arranged, for example, in m columns by n columns (m, n≧2) at a predetermined arrangement pitch. The apertures 30 are formed as rectangles of the same size and shape. The shape of the apertures 30 may be circular. The charged particle beam B0 emitted from the electron gun 201 illuminates the entire shaping aperture array substrate 203 almost perpendicularly by the illumination lens 202. The charged particle beam B0 illuminates an area of ​​the shaping aperture array substrate 203 that includes all the apertures 30. A part of the charged particle beam B0 is shaped into a multibeam B by passing through the plurality of apertures 30. In this way, the shaping aperture array substrate 203 shapes the charged particle beam B0 from the electron gun 201 to generate a multibeam B.

[0017] The blanking aperture array substrate 204 has a plurality of apertures 40 corresponding to the positions of the apertures 30 of the shaping aperture array substrate 203. Although not shown, a pair of two electrodes (blankers) is arranged in each aperture 40. The multi-beams B passing through each aperture 40 are deflected independently by a voltage applied to the pair of two electrodes. That is, the blankers perform blanking deflection of the corresponding beams among the multi-beams B passing through the plurality of apertures 30 of the shaping aperture array substrate 203. This allows the blanking aperture array substrate 204 to perform beam ON / OFF control individually for each of the multi-beams B passing through the shaping aperture array substrate 203. That is, the blanking aperture array substrate 204 can perform blanking control to determine whether or not each of the multi-beams B is irradiated to the sample W. The blanking aperture array substrate 204 is controlled by the deflection control circuit 130. The opening 40 of the blanking aperture array substrate 204 is larger than the opening 30 of the shaping aperture array substrate 203, making it easier for each beam of the multiple beams B to pass through.

[0018] A blanking deflector 212 that performs blanking control of the entire multi-beams collectively is provided below the blanking aperture array substrate 204. The blanking deflector 212 can perform blanking control as to whether or not the entire multi-beams B are irradiated onto the sample W.

[0019] A limiting aperture substrate 206 having an opening 50 formed in its center is provided below the blanking deflector 212. The electron beam deflected by the blanking aperture array substrate 204 or the blanking deflector 212 to be in the beam-off state is moved away from the opening 50 at the center of the limiting aperture substrate 206 and is blocked by the limiting aperture substrate 206. The state in which the electron beam is blocked by the limiting aperture substrate 206 is called beam-off. The electron beam not deflected by the blanking aperture array substrate 204 and the blanking deflector 212 passes through the limiting aperture substrate 206 and is deflected by the deflectors 208 and 209 to be irradiated to a desired position on the specimen W. The state in which the electron beam passes through the opening 50 of the limiting aperture substrate 206 and is irradiated to the specimen W is called beam-on.

[0020] In this manner, the limiting aperture substrate 206 either passes the entire multi-beam B through the aperture 50 provided in its center, or blocks the entire multi-beam B deflected by the blanking deflector 212 .

[0021] The blanking deflector 212 is provided between the shaping aperture array substrate 203 or the blanking aperture array substrate 204 and the limiting aperture substrate 206. The blanking deflector 212 is controlled by the logic circuit 131 and the deflection control circuit 130, and performs blanking control as to whether or not the multi-beams B that have passed through the blanking aperture array substrate 204 are irradiated as a whole onto the sample W. This makes it possible to control the entire multi-beams B to be beam-on / beam-off without changing the control state of the blanking aperture array substrate 204. The deflectors 208 and 209 are each controlled by the deflection control circuit 130 via the DAC amplifier 134.

[0022] The limiting aperture drive unit 136 is connected to the limiting aperture substrate 206 and can move the limiting aperture substrate 206 in the X direction or the Y direction. The limiting aperture substrate 206 can move within an XY plane (approximately horizontal plane) that is approximately perpendicular to the irradiation direction of the charged particle beam B0 or ​​the multibeam B.

[0023] The limiting aperture control unit 135 is connected to the limiting aperture driving unit 136 and controls the limiting aperture driving unit 136. The limiting aperture control unit 135 can control the position of the limiting aperture substrate 206 by controlling the limiting aperture driving unit 136.

[0024] For example, as described above, during the beam-off (blanking) period, the multi-beams B are deflected in an arbitrary direction in the XY plane (within a substantially horizontal plane) by the blanking deflector 212, and are irradiated to a position outside the opening 50 of the limiting aperture substrate 206. The direction in which the multi-beams B are deflected by the blanking deflector 212 is called the deflection direction. During such a blanking period, the limiting aperture control unit 135 moves the limiting aperture substrate 206 in the opposite direction to the deflection direction of the multi-beams B. As a result, in addition to the deflection of the entire multi-beams B by the blanking deflector 212, the movement of the opening 50 of the limiting aperture substrate 206 makes it even more difficult for the scattered beams to pass through the opening 50 of the limiting aperture substrate 206.

[0025] The control unit 160 may be configured with one or more computers, CPUs, PLCs, etc. For example, the limiting aperture control unit 135 may be configured with one or more computers, CPUs, PLCs, etc. The control unit 160 may be configured integrally with the drawing unit 150, or may be configured separately. The limiting aperture driving unit 136 may be, for example, a piezoelectric element, an ultrasonic motor, etc.

[0026] The stage control unit 5 controls the operation of the stage 105 so as to move the stage 105 in the X direction or the Y direction (approximately the horizontal direction).

[0027] Stage position measuring device 7 is composed of, for example, a laser length measuring device, and irradiates laser light onto mirror 210 fixed to stage 105, and measures the position of stage 105 in the X direction using the reflected light. A configuration similar to stage position measuring device 7 and mirror 210 is provided not only in the X direction, but also in the Y direction, and measures the position of stage 105 in the Y direction as well.

[0028] 1 shows the configuration necessary for explaining the first embodiment. The drawing device 100 may include other necessary configurations.

[0029] The drawing apparatus 100 performs drawing operations using a raster scan method in which shot beams are continuously irradiated in sequence while the XY stage 105 moves. When drawing a desired pattern, the necessary beams are controlled to be turned on or off by blanking control according to the pattern.

[0030] Fig. 2A is a conceptual diagram showing a state of the drawing apparatus 100 when the beam is ON. Fig. 2B is a conceptual diagram showing a state of the drawing apparatus 100 when the beam is OFF.

[0031] As shown in Fig. 2A, in the beam ON state, the multi-beams B from the blanking aperture array substrate 204 pass through the blanking deflector 212 and the opening 50 of the limiting aperture substrate 206, and are irradiated onto the sample W in Fig. 1. At this time, the blanking deflector 212 does not deflect the multi-beams B much, and does not shield (blank) the multi-beams B at the limiting aperture substrate 206. The beam ON state is used, for example, when a drawing process is being performed.

[0032] As shown in FIG. 2B, in the beam OFF state, the multi-beams B from the blanking aperture array substrate 204 are deflected in the +X direction by the blanking deflector 212. Furthermore, the limiting aperture control unit 135 and the limiting aperture driving unit 136 move the limiting aperture substrate 206 in the direction (-X direction) opposite to the deflection direction (+X direction). In this way, by deflecting the multi-beams B in the +X direction and moving the limiting aperture substrate 206 in the -X direction, the limiting aperture substrate 206 can almost completely block the multi-beams B. At this time, the limiting aperture substrate 206 can also block the scattered beams. That is, in the beam OFF state according to this embodiment, the multi-beams B and the scattered beams are blocked (blanked) by the limiting aperture substrate 206. The beam OFF state is used, for example, in a preparation period before drawing in which drawing processing is not being performed (for example, a soaking process, a Z map measurement). Furthermore, when the multibeam B is irradiated along a plurality of lines on the sample W for scanning, the blanking period may be the period from the end of irradiation of a first line to the start of irradiation of the next second line (stripe end).

[0033] Next, a method for controlling the drawing device 100 according to this embodiment will be described.

[0034] 3 is a flow diagram showing a method of controlling the drawing apparatus 100 in the soaking process. The soaking process is a pre-drawing process in which, after a sample W such as a mask blank is placed on the stage 105, the temperature of the sample W is kept constant until it matches the temperature of the stage 105 in the drawing chamber 103. The soaking period is a period from when the sample W is placed on the stage 105 until the sample W reaches a predetermined temperature. In the soaking process, the blanking aperture array substrate 204 and the blanking deflector 212 are in a beam-off state so that the sample W is not irradiated with the multibeams B. Therefore, the multibeams B are blocked by the limiting aperture substrate 206 and do not reach the sample W.

[0035] However, as described above, a part of the scattered beam scattered at the side surface of the opening 30 of the shaping aperture array substrate 203, etc., may not be sufficiently blocked by the blanking aperture array substrate 204 and the blanking deflector 212. There is a risk that such a part of the scattered beam passes through the blanking aperture array substrate 204 and the blanking deflector 212 and is irradiated onto the sample W. In this case, the photosensitive material on the sample W may be locally exposed unintentionally by the scattered beam.

[0036] Therefore, in this embodiment, during a period (blanking period) during which the blanking aperture array substrate 204 or the blanking deflector 212 performs blanking control so as not to irradiate the multibeam B onto the sample W, the limiting aperture control unit 135 moves the limiting aperture substrate 206 in the opposite direction (e.g., −X direction) to the deflection direction (e.g., +X direction) of the multibeam B. This makes it possible to largely shift the multibeam B from the opening 50 of the limiting aperture substrate 206 when the beam is OFF, and prevents the sample W from being exposed by the scattered beam.

[0037] For example, first, the blanking aperture array substrate 204 and / or the blanking deflector 212 deflects the entire multi-beam B to irradiate it on the limiting aperture substrate 206, and then turns the beam OFF (S10). At this time, for example, the entire multi-beam B is deflected in the +X direction.

[0038] Next, or simultaneously with step S10, the limiting aperture control unit 135 and the limiting aperture driving unit 136 move the limiting aperture substrate 206 in a plane substantially perpendicular to the axial direction (Z direction) of the beam. For example, the limiting aperture substrate 206 is moved to a shielding position in a direction opposite to the deflection direction of the multi-beams B (S20). More specifically, the limiting aperture control unit 135 and the limiting aperture driving unit 136 move the limiting aperture substrate 206 in the -X direction. This suppresses the multi-beams B leaking from the opening 50 of the limiting aperture substrate 206. At this time, it is preferable that the moving distance of the limiting aperture substrate 206 is equal to or greater than the opening diameter of the opening 50. This causes the opening 50 to be significantly shifted so as not to overlap with the opening 50 in the original position, so that the multi-beams B leaking from the opening 50 of the limiting aperture substrate 206 can be further suppressed.

[0039] Next, or simultaneously with steps S10 and S20, the time t is reset to 0 and timing is started (S30). For example, the deflection control circuit 130 or the limiting aperture control unit 135 includes a timer (not shown) and measures the time t from the start of the soaking process (t=0). The soaking process time T is a time from when the sample W is placed on the stage 105 until the temperature of the sample W reaches a predetermined temperature that is substantially the same as the temperature of the stage 105 (time until an equilibrium state is reached), and is set in advance. The soaking process continues until the time t reaches the soaking process time T.

[0040] Next, the deflection control circuit 130 or the limiting aperture control unit 135 compares the time t with the soaking processing time T (S40). If the time t has not reached the soaking processing time T (NO in S40), the deflection control circuit 130 or the limiting aperture control unit 135 continues timing (S40).

[0041] Next, when the time t reaches the soaking process time T (YES in S40), the limiting aperture control unit 135 and the limiting aperture drive unit 136 return the limiting aperture substrate 206 to the irradiation position through which the multibeam B passes (S50). For example, the limiting aperture control unit 135 and the limiting aperture drive unit 136 move the limiting aperture substrate 206 in the +X direction. This allows the multibeam B to pass through the opening 50 of the limiting aperture substrate 206. At this time, the movement distance of the limiting aperture substrate 206 in the +X direction is the same as the movement distance in step S20. This causes the opening 50 to return to its original position. This ends the soaking process.

[0042] After that, other processing before drawing is performed, and when the beam is turned from OFF to ON, the drawing processing starts.

[0043] According to this embodiment, during the beam-off period of the soaking process, the limiting aperture control unit 135, for example, moves the limiting aperture substrate 206 in the opposite direction to the deflection direction of the multibeams B. This allows the multibeams B to be significantly shifted from the openings 50 of the limiting aperture substrate 206, and prevents the sample W from being exposed to the scattered beams.

[0044] Incidentally, the movement direction of the limiting aperture substrate 206 during the blanking period is preferably the opposite direction to the deflection direction of the multibeams B in a plane (e.g., a substantially horizontal plane) substantially perpendicular to the irradiation direction of the multibeams B. Therefore, when the deflection direction of the multibeams B is the +Y direction, the movement direction of the limiting aperture substrate 206 may be the -Y direction. Also, when the deflection direction of the multibeams B is an inclined direction with respect to the X and Y directions, the movement direction of the limiting aperture substrate 206 may be the inclined direction opposite to the deflection direction of the multibeams B. However, the opposite direction does not need to be a phase difference of 180°, and may be about 180°±10°, which also applies to the following embodiments.

[0045] Second embodiment 4 is a flow diagram showing a method for controlling the drawing apparatus 100 in the Z map measurement process. The Z map measurement is a process for measuring and mapping the height (position in the Z direction) of the surface of the sample W in order to measure the distortion of the sample W. The Z map measurement is executed by the deflection control circuit 130 after the soaking process.

[0046] In the Z map measurement, the blanking aperture array substrate 204 and the blanking deflector 212 are also in the beam-off state so as not to irradiate the sample W with the multibeams B. Therefore, the multibeams B are blocked by the limiting aperture substrate 206 and do not reach the sample W.

[0047] First, steps S10 and S20 are executed. That is, the limiting aperture control unit 135 and the limiting aperture driving unit 136 move the limiting aperture substrate 206 to a blocking position in the direction opposite to the deflection direction of the multi-beam B while turning off the beam.

[0048] Next, Z map measurement is started (S60). In the Z map measurement, a laser beam is irradiated onto the surface of the sample W, and the reflected light is detected to detect the height (position in the Z direction) of the surface of the sample W. Illustrations and detailed descriptions of the laser beam generating device and the laser beam detecting device are omitted here.

[0049] The laser light is irradiated at approximately equal intervals on the surface of the sample W. Therefore, the height position in the Z direction of the surface of the sample W is measured two-dimensionally in a matrix form. This allows Z map data to be obtained. The Z map measurement is performed on the entire surface of the sample W (NO in S70).

[0050] The Z map measurement is performed on the entire surface of the sample W, and when the Z map is completed, the Z map measurement ends (YES in S70). The Z map is used to adjust the height of the sample W or adjust the reduction lens 205 and / or the objective lens 207 in the drawing process.

[0051] When the Z map measurement is completed (YES in S70), the limiting aperture control unit 135 and the limiting aperture driving unit 136 return the limiting aperture substrate 206 to the irradiation position that allows the multibeam B to pass (S50), similar to step S50 in Fig. 3. This completes the Z map measurement process.

[0052] After that, other processing before drawing is performed, and when the beam is turned from OFF to ON, the drawing processing starts.

[0053] In the Z map measurement process as in the second embodiment, during a beam-off period, the limiting aperture control unit 135 moves the limiting aperture substrate 206 in the opposite direction to the deflection direction of the multi-beams B. The configuration and other operations of the second embodiment may be similar to those of the first embodiment. As a result, the second embodiment can obtain the same effects as the first embodiment.

[0054] Third embodiment Fig. 5 is a flow diagram showing a control method of the drawing apparatus 100 during drawing processing. Fig. 6 is a conceptual diagram showing scanning of the multi-beams B in the drawing processing.

[0055] In the drawing process, the blanking aperture array substrate 204 and the blanking deflector 212 are in a beam-on state in order to expose the photosensitive material on the sample W to a desired pattern. This causes the multi-beams B to scan and draw on the surface of the sample W.

[0056] The drawing process is performed after pre-processing such as soaking and Z map measurement. As shown in Fig. 6, the drawing process scans the multi-beam B in a zigzag pattern along a plurality of lines L1, L2, L3, ... on the surface of the sample W. The plurality of lines L1, L2, L3, ... are also collectively referred to as lines L. When scanning the multi-beam B along each line L, the blanking aperture array substrate 204 and the blanking deflector 212 are in a beam-on state.

[0057] However, during the period from the end of irradiation of a certain line (e.g., L1) among the multiple lines L to the start of irradiation of the next line (e.g., L2), the sample moves in the direction of arrow A1 at end E1 of the sample W. At this time, the drawing process is temporarily stopped, and the blanking aperture array substrate 204 and the blanking deflector 212 are in the beam-off state so as not to irradiate the sample W with the multibeam B. Also, during the period from the end of irradiation of a certain line (e.g., L2) to the start of irradiation of the next line (e.g., L3), the sample moves in the direction of arrow A2 at end E2 of the sample W. At this time, the drawing process is temporarily stopped, and the blanking aperture array substrate 204 and the blanking deflector 212 are in the beam-off state so as not to irradiate the sample W with the multibeam B.

[0058] In this way, the drawing process may stop temporarily between a certain line and the next line even during the drawing process. At this time, the drawing device 100 is in a beam-off state, and the limiting aperture control unit 135 and the limiting aperture driving unit 136 move the limiting aperture substrate 206 to a blocking position in the opposite direction to the deflection direction of the multi-beam B.

[0059] For example, when the drawing process starts, the limiting aperture control unit 135 and the limiting aperture driving unit 136 turn on the beam and execute the drawing process (S80). At this time, the limiting aperture substrate 206 is placed at a position (drawing position) where the multibeam B passes through the opening 50. This allows the multibeam B to pass through the opening 50, and the desired pattern can be drawn on the sample W.

[0060] A drawing process is executed (S100). At this time, as shown in Fig. 6, the multi-beam B scans lines L1, L2, L3, . . . on the surface of the sample W for each line (NO in S110).

[0061] When the drawing process is stopped temporarily at the end E1 or E2 between a certain line and the next line (stop at one end in S110), the blanking aperture array substrate 204 and the blanking deflector 212 are in the beam OFF state (S10). At this time, together with the beam OFF, the limiting aperture control unit 135 and the limiting aperture driving unit 136 move the limiting aperture substrate 206 to a shielding position in the opposite direction to the deflection direction of the multi-beam B (S20).

[0062] The beam is kept off until the drawing process is resumed (NO in S130).

[0063] When the drawing process is resumed (YES in S130), the process returns to step S80 and is executed again from turning on the beam.

[0064] When scanning of the multi-beams B along all the lines L is completed (end of S110), the drawing process ends.

[0065] In this manner, in the drawing process, during a stripe end period from the end of irradiation of a certain line to the start of irradiation of the next line, the limiting aperture control unit 135 and the limiting aperture driving unit 136 are in a beam-off state. During this beam-off period, the limiting aperture control unit 135 moves the limiting aperture substrate 206 in a plane perpendicular to the irradiation axis direction of the multi-beam B, for example, in the opposite direction to the deflection direction of the multi-beam B.

[0066] The configuration and other operations of the third embodiment may be similar to those of the first embodiment. As a result, the third embodiment can obtain the same effects as the first embodiment. The third embodiment may be combined with the second embodiment. Furthermore, the third embodiment may be applied to a state in which the multi-beam B is not drawing, for example, when drawing is stopped due to an error occurrence, when Z position measurement is performed, when a mark is detected, or the like.

[0067] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope of the invention and its equivalents described in the claims, as well as in the scope and spirit of the invention. [Explanation of symbols]

[0068] 100 drawing device, 150 drawing unit, 160 control unit, 102 electron lens column, 103 drawing chamber, 4 irradiation control unit, 5 stage control unit, 7 stage position measurement device, 131 logic circuit, 134 DAC amplifier, 135 limiting aperture control unit, 201 electron gun, 202 illumination lens, 203 shaping aperture array substrate, 204 blanking aperture array substrate, 205 reduction lens, 206 limiting aperture substrate, 207 objective lens, 208 main deflector, 209 sub-deflector, 212 blanking deflector, 136 limiting aperture drive unit, W sample

Claims

1. 1. A drawing apparatus that draws a predetermined pattern on an irradiation target by irradiating a multi-charged particle beam to a predetermined position of the irradiation target, comprising: a beam generating mechanism for generating a multi-charged particle beam; a limiting aperture substrate for blocking the generated multi-charged particle beam, and a deflector for deflecting the multi-charged particle beam in a predetermined direction; and a blanking aperture mechanism for blanking the multi-charged particle beam; a movable stage on which the irradiation target is placed; A drive unit that moves the limiting aperture plate; a control unit for controlling the drawing device, The control unit, during the blanking period, moves the limiting aperture substrate from a position during the drawing process within a plane perpendicular to an axial direction of the multi-charged particle beam, and returns the limiting aperture substrate to the position during the drawing process.

2. The imaging apparatus according to claim 1 , wherein the control unit moves the limiting aperture substrate in a direction opposite to the predetermined direction.

3. 3. The imaging apparatus according to claim 1, wherein a moving distance of said limiting aperture substrate is equal to or greater than an opening diameter of an aperture provided in said limiting aperture substrate.

4. The method for controlling a drawing apparatus according to claim 1 , wherein the control unit performs soaking during the blanking period to keep a temperature of the irradiation target constant.

5. 1. A method for drawing a predetermined pattern on an irradiation target by irradiating a multi-charged particle beam to a predetermined position of the irradiation target, comprising: Generates multi-charged particle beams, deflecting the generated multi-charged particle beam in a predetermined direction and blanking the multi-charged particle beam by a limiting aperture substrate; The drawing method includes, during the blanking period, moving the limiting aperture substrate from a position during the drawing process within a plane perpendicular to an axial direction of the multi-charged particle beam, and returning the limiting aperture substrate to the position during the drawing process.

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