Temperature measuring device and temperature measuring method

Abstract

To provide a temperature measuring device and a temperature measuring method that can stably measure temperature by performing stable communication control.SOLUTION: A temperature measuring device includes: a substrate-type temperature sensor that has a substrate-shaped member and a temperature sensor for detecting temperature of the substrate-shaped member and is placed on a rotating rotary table; an antenna for receiving an electric signal transmitted from the temperature sensor; and a control unit for calculating detection temperature of the temperature sensor based on the electric signal received by the antenna. The control unit takes in the electric signal received by the antenna at timing synchronized with rotation of the rotary table, and calculates the detection temperature of the temperature sensor.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present disclosure relates to a temperature measurement device and a temperature measurement method. [Background technology]

[0002] For example, in a substrate processing apparatus that performs a desired process on a substrate, a temperature measuring method using a substrate-type temperature sensor is known.

[0003] Patent Document 1 discloses a wafer-type temperature sensor comprising a wafer, an upper surface of the wafer divided into a number of regions, and a number of temperature sensors arranged in each of the divided regions, each of the temperature sensors comprising a surface acoustic wave element that, in response to an input of a high-frequency signal, sends back a frequency signal based on the temperature of the corresponding region within a different frequency band for each of the regions.

[0004] Patent Document 2 discloses a temperature measurement substrate used in a heat treatment apparatus that applies heat treatment to a substrate to be processed, the temperature measurement substrate comprising a substrate body, a vibrator having a piezoelectric element and provided on the substrate body, and an antenna portion connected to the vibrator and provided on the peripheral side of the substrate body. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2007-171047 A [Patent Document 2] JP 2012-230933 A Summary of the Invention [Problem to be solved by the invention]

[0006] In a substrate processing apparatus in which multiple substrates are placed on a turntable that rotates within a chamber, communication is carried out between a substrate-type temperature sensor placed on the turntable and a parent antenna, but there is a risk that the communication will become unstable, causing the measured temperature to also become unstable.

[0007] In one aspect, the present disclosure provides a temperature measurement device and a temperature measurement method capable of stably measuring temperature by performing stable communication control. [Means for solving the problem]

[0008] In order to solve the above problem, according to one aspect, A temperature measuring device for a substrate processing apparatus including a chamber and a rotary table provided within the chamber and having a plurality of substrate placement sections on an upper surface thereof, the temperature measuring device measuring a temperature of a substrate shaped member placed on the substrate placement section at a timing when the substrate processing apparatus is not performing the substrate processing, the temperature measuring device comprising: Detecting a substrate shaped member and a temperature of the substrate shaped member Multiple SAW Has a sensor and rotates The above Rotating table The substrate placement portion to be placed on One or more A substrate-type temperature sensor, an antenna for transmitting and receiving an electrical signal, and a , including the resonant frequency of the SAW sensor Transmits electrical signals in a predetermined frequency band do A transmitting unit and a SAW a receiving unit for receiving an electrical signal transmitted from the sensor; and SAW a temperature calculation unit that calculates a detected temperature of the sensor; and a position sensor that outputs a signal when the rotary table is located at a predetermined home position, the transmitting unit transmits an electrical signal in the frequency band regardless of a rotational position of the turntable while the turntable rotates, The receiving unit receives the electrical signal received by the antenna after a predetermined time has elapsed since the position sensor output a signal, and the temperature calculation unit calculates the temperature based on the electrical signal received by the receiving unit. SAW A temperature measurement device is provided that calculates the sensed temperature of the sensor. Effect of the Invention

[0009] According to one aspect, it is possible to provide a temperature measuring device and a temperature measuring method capable of stably measuring temperature by performing stable communication control. [Brief description of the drawings]

[0010] [Figure 1] 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus; [Diagram 2] FIG. 2 is a diagram for explaining a structure inside a chamber according to an embodiment. [Diagram 3] FIG. 2 is a diagram illustrating an example of a hardware configuration of a control unit according to the embodiment. [Figure 4] FIG. 1 is a diagram showing an example of a substrate-type temperature sensor. [Diagram 5] 4 is a flowchart illustrating an example of a temperature measuring method according to the embodiment. [Figure 6] 4 is a time chart showing an example of a temperature measuring method. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0012] [Substrate processing equipment] Before describing the temperature measuring device 200 according to this embodiment, a substrate processing apparatus in which the temperature is measured using the temperature measuring device 200 will be described with reference to Figures 1 to 3. Figure 1 is a schematic cross-sectional view showing an example of the substrate processing apparatus.

[0013] The substrate processing apparatus has a chamber 1 having a substantially circular planar shape, and a rotary table (susceptor) 2 that is provided in the chamber 1 and has a rotation center at the center of the chamber 1. The chamber 1 has a container body 12 having a cylindrical shape with a bottom, and a top plate 11 that is detachably and airtightly arranged on the upper surface of the container body 12 via a seal member 13 such as an O-ring.

[0014] The rotary table 2 is fixed at the center to a cylindrical core 21, and the core 21 is fixed to the upper end of a rotary shaft 22 extending in the vertical direction so as to be rotatable. The rotary shaft 22 penetrates the bottom 14 of the chamber 1, and its lower end is attached to a drive unit 23 that rotates the rotary shaft 22 around the vertical axis. The rotary shaft 22 and the drive unit 23 are housed in a cylindrical case body 20 with an open upper surface. A bellows 16 is provided between the bottom 14 of the container main body 12 and the case body 20. As a result, the case body 20 is airtightly attached to the lower surface of the bottom 14 of the chamber 1, and the internal atmosphere of the case body 20 is isolated from the external atmosphere. The drive unit 23 may be a motor.

[0015] The substrate processing apparatus is also provided with a position sensor 25 that detects that the turntable 2 rotating around the rotation axis 22 is positioned at a home position (a predetermined rotation angle position). The position sensor 25 is, for example, a magnetic rotation detection sensor, a proximity sensor, a photosensor, or the like, and outputs a signal when the turntable 2 is positioned at a predetermined rotation angle position (home position). The position sensor 25 may be a sensor that detects the rotation angle of the turntable 2, such as a resolver or an encoder. A detection signal from the position sensor 25 is input to the control unit 100. Although the position sensor 25 is illustrated near the drive unit 23 in FIG. 1, the position at which the position sensor 25 is provided is not limited to this position.

[0016] Further, outside the bellows 16, there is provided a lifting mechanism 17 capable of raising and lowering the turntable 2 and changing the height of the turntable 2. The lifting mechanism 17 raises and lowers the turntable 2, and is configured to be able to change the distance between the ceiling surface 45 and a wafer (not shown) placed in a recess 24 (described later) in response to the raising and lowering of the turntable 2. The lifting mechanism 17 may be realized by various configurations as long as it can raise and lower the turntable 2. For example, the lifting mechanism 17 may have a structure in which the length of the rotation shaft 22 is extended and contracted by a gear or the like.

[0017] A first exhaust port 610 is provided on the outer periphery of the chamber 1 and communicates with an exhaust pipe 630. The exhaust pipe 630 is connected to a vacuum pump 640 via a pressure regulator 650, and is configured so that the inside of the chamber 1 can be exhausted from the first exhaust port 610.

[0018] FIG. 2 is a diagram for explaining the structure inside the chamber 1, and shows the structure inside the chamber 1 when the substrate processing apparatus according to the embodiment is viewed from above, with the top plate 11 omitted. On the surface of the turntable 2, as shown in FIG. 2, circular recesses 24 are provided along the rotation direction (circumferential direction) for placing a plurality of (five in the illustrated example) semiconductor wafers (hereinafter referred to as "substrates" or "wafers") thereon. In addition, the recesses 24 are adapted to be able to place substrate-type temperature sensors 210 of the same shape instead of wafers. Note that FIG. 1 shows a state in which the substrate-type temperature sensors 210 are placed in the left and right recesses 24. Also, FIG. 2 shows a state in which the substrate-type temperature sensor 210 is placed in one recess 24. This recess 24 has an inner diameter slightly (e.g., 2 mm) larger than the diameter of the wafer (e.g., 300 mm) and a depth approximately equal to the thickness of the wafer, and is a placement portion on which the wafer can be placed. Therefore, when a wafer is placed in the recess 24, the surface of the wafer and the surface of the turntable 2 (the area on which the wafer is not placed) are at the same height. The bottom surface of the recess 24 is formed with through holes (none of which are shown) through which, for example, three lift pins penetrate to support the back surface of the wafer and lift the wafer up and down. The transfer port 15 transfers the wafer between the external transfer arm 10 and the turntable 2.

[0019] Above the turntable 2, a reaction gas nozzle 31, a reaction gas nozzle 32, and a separation gas nozzle 41, 42, each made of, for example, quartz, are arranged. In the illustrated example, the separation gas nozzle 41, the reaction gas nozzle 31, the separation gas nozzle 42, and the reaction gas nozzle 32 are arranged in this order at intervals in the circumferential direction of the chamber 1, clockwise from the transfer port 15 (the direction of rotation of the turntable 2). These nozzles 41, 31, 42, 32 have gas introduction ports 41a, 31a, 42a, 32a, which are the base ends, fixed to the outer circumferential wall of the vessel body 12. As a result, the nozzles are installed so that gas is introduced into the chamber 1 from the outer circumferential wall of the chamber 1 and extends parallel to the turntable 2 along the radial direction of the vessel body 12.

[0020] A first reactive gas supply source storing a first reactive gas is connected to the reactive gas nozzle 31 via an on-off valve and a flow rate regulator (both not shown). A second reactive gas supply source storing a second reactive gas that reacts with the first reactive gas is connected to the reactive gas nozzle 32 via an on-off valve and a flow rate regulator (both not shown).

[0021] In addition, a supply source of a rare gas such as Ar or He or an inert gas such as nitrogen (N2) gas is connected to the separation gas nozzles 41 and 42 via an opening / closing valve or a flow rate regulator (both not shown). The inert gas supplied from the separation gas nozzles 41 and 42 is also called a separation gas.

[0022] The reaction gas nozzle 31 is connected to a first reaction gas supply source, a second reaction gas supply source, and a supply source of an inert gas used as a separation gas such as a rare gas such as Ar or He, or nitrogen (N2) gas. A switching unit (not shown) is operated to switch which gas is supplied. The reaction gas nozzle 32 is connected to a second reaction gas supply source, a first reaction gas supply source, and a supply source of an inert gas used as a separation gas, and a switching unit (not shown) is operated to switch which gas is supplied.

[0023] The area defined below the reaction gas nozzle 31 becomes a first processing area P1 for adsorbing the first reaction gas onto the wafer. The area defined below the reaction gas nozzle 32 becomes a second processing area P2 for reacting the first reaction gas adsorbed onto the wafer in the first processing area P1 with a second reaction gas.

[0024] In the chamber 1, two convex portions 4 are attached to the back surface of the top plate 11 so as to protrude toward the turntable 2. The convex portions 4, together with the separation gas nozzles 41 and 42, constitute a separation region D. That is, the region below the separation gas nozzles 41 and 42 separates the first processing region P1 from the second processing region P2, and serves as the separation region D that prevents the first reaction gas from mixing with the second reaction gas. The convex portions 4 have a substantially fan-shaped planar shape with an arc-shaped top, and in the present disclosure, the inner arc is connected to a protruding portion 5 (see FIG. 1) that protrudes beyond the ceiling surface 45, and the outer arc is disposed along the inner circumferential surface of the vessel body 12 of the chamber 1. As shown in FIG. 1, the protruding portion 5 is provided so as to surround the outer periphery of the core portion 21 that fixes the turntable 2.

[0025] 2 is attached to the rear surface of the top plate 11. Therefore, the lower surface of the convex portion 4 is lower than the ceiling surfaces 45 located on both sides of the lower surface in the circumferential direction.

[0026] A groove (not shown) is formed in the circumferential center of each of the convex portions 4, and accommodates the separation gas nozzles 41 and 42. The separation gas nozzles 41 and 42 have gas ejection holes formed therein.

[0027] The reaction gas nozzles 31, 32 are provided near the wafer and spaced apart from the ceiling surface 45. The separation gas supplied from the separation gas nozzle 42 acts as a counter flow to the first reaction gas from the first processing region P1 and the second reaction gas from the second processing region P2. Therefore, the first reaction gas from the first processing region P1 and the second reaction gas from the second processing region P2 are separated by the convex portion 4 and the separation gas. This prevents the first reaction gas and the second reaction gas from mixing and reacting with each other in the chamber 1.

[0028] A first exhaust port 610 and a second exhaust port 620 are formed between the turntable 2 and the inner peripheral surface of the container body 12. A pressure regulator (APC, Auto Pressure Controller) 650 is provided in an exhaust pipe 630 between the first exhaust port 610 and a vacuum pump 640 shown in FIG. 1. Similarly, the second exhaust port 620 is connected to a vacuum pump (not shown) via an exhaust pipe provided with a pressure regulator. The exhaust pressures of the first exhaust port 610 and the second exhaust port 620 are configured to be independently controllable.

[0029] 1, a heater unit 7, which is a heating means, is provided in the space between the turntable 2 and the bottom 14 of the chamber 1. The heater unit 7 provided below the turntable 2 heats the wafer on the turntable 2 to a temperature (e.g., 450° C.) determined by the process recipe via the turntable 2.

[0030] The case body 20 is provided with a purge gas supply pipe 72 for supplying a purge gas (e.g., N2 gas) for purging. Furthermore, a plurality of purge gas supply pipes 73 for purging the arrangement space of the heater unit 7 are provided at a predetermined angular interval in the circumferential direction below the heater unit 7 on the bottom 14 of the chamber 1. A ring-shaped cover member 71 is provided below the periphery of the turntable 2, and a lid member 7a for covering the heater unit 7 is provided between the heater unit 7 and the turntable 2. The lid member 7a can be made of, for example, quartz. This prevents gas from entering the area where the heater unit 7 is provided.

[0031] By supplying purge gas from the purge gas supply pipe 72 and the purge gas supply pipe 73, the flow of the purge gas can prevent the gas in the space 481 and the space 482 shown in FIG. 2 from mixing through the space below the center of the chamber 1 and the space below the turntable 2.

[0032] A separation gas supply pipe 51 is connected to the center of the top plate 11 of the chamber 1, and is configured to supply a separation gas (e.g., N2 gas) to a space 52 between the top plate 11 and the core part 21. The separation gas supplied to the space 52 is discharged toward the periphery along the surface of the turntable 2 on the wafer placement area side through a narrow space 50 between the protrusion 5 and the turntable 2. The space 50 can be maintained at a higher pressure than the spaces 481 and 482 by the separation gas. Therefore, the space 50 prevents the first reaction gas supplied to the first processing region P1 and the second reaction gas supplied to the second processing region P2 from mixing through the space 52.

[0033] The substrate processing apparatus is provided with a control unit 100 for controlling the operation of the substrate processing apparatus. Various sensors are installed in the substrate processing apparatus.

[0034] Next, an example of a hardware configuration of the control unit 100 according to the embodiment will be described with reference to Fig. 3. The control unit 100 has a CPU (Central Processing Unit) 101, a ROM (Read Only Memory) 102, a RAM (Random Access Memory) 103, an I / O port 104, an operation panel 105, and an HDD (Hard Disk Drive) 106. Each unit is connected by a bus B.

[0035] The CPU 101 controls the operation of the control unit 100 based on programs stored in a storage device such as the HDD 106, process recipes for performing film formation processing and cleaning processing, and the like. For example, the programs include a program for executing a control method for the turntable 2. The CPU 101 controls the film formation processing of a wafer placed on the turntable 2 based on the process recipe. The CPU 101 also controls the cleaning processing in the chamber 1 based on the cleaning recipe. The CPU 101 controls the elevation of the turntable 2 based on the program for executing the control method for the turntable 2 during idle time when the film formation processing and cleaning processing are not being performed.

[0036] The ROM 102 is configured by an EEPROM (Electrically Erasable Programmable ROM), a flash memory, a hard disk, etc., and is a storage medium that stores programs, recipes, etc. of the CPU 101. The RAM 103 functions as a work area for the CPU 101, etc.

[0037] The I / O port 104 acquires values ​​of various sensors that detect temperature, pressure, gas flow rate, etc. from various sensors attached to the substrate processing apparatus, and transmits them to the CPU 101. The I / O port 104 also outputs control signals output by the CPU 101 to each part (rotary table 2, vacuum pump 640, etc.) of the substrate processing apparatus. An operation panel 105 that enables an operator to operate the substrate processing apparatus is also connected to the I / O port 104.

[0038] The HDD 106 is an auxiliary storage device, and may store process recipes, which are information that specifies the procedures for film formation and cleaning processes, and programs that execute a method of controlling the turntable 2 during idle time.

[0039] In this manner, the substrate processing apparatus can alternately perform processing on a wafer placed in the recess 24 by adsorbing a first reactive gas onto the wafer in the first processing region P1 and reacting the first reactive gas adsorbed onto the wafer with a second reactive gas in the second processing region P2.

[0040] <Temperature measuring device> Next, the temperature measuring device 200 will be described with reference to Figures 1, 2 and 4. As shown in Figure 1, the temperature measuring device 200 includes a substrate type temperature sensor 210, a reader antenna 220, and a control unit 230. In the following description, the substrate type temperature sensor 210 will also be referred to as a child device of the temperature measuring device 200, and the substrate type temperature sensor 210 and the reader antenna 220 will also be referred to as a parent device of the temperature measuring device 200.

[0041] 4 is a diagram showing an example of a substrate-type temperature sensor 210. The substrate-type temperature sensor 210 has a substrate-shaped member 211 and a SAW (Surface Acoustic Wave) sensor 212.

[0042] The substrate shaped member 211 is a disk-shaped member having the same diameter, thickness, and material (e.g., Si) as the wafer to be processed in the substrate processing apparatus. This allows the substrate type temperature sensor 210 to be transported by the transport arm 10 in the same way as the wafer, and to be placed in the recess 24 in the same way as the wafer. In the example of FIG. 2, the turntable 2 has five recesses 24, and the substrate type temperature sensor 210 is shown installed in one recess 24, but this is not limiting, and the substrate type temperature sensor 210 may also be installed in the other recesses 24.

[0043] A SAW sensor 212 is provided on the top surface of the substrate shaped member 211 or on a recessed portion formed on the top surface. One or more SAW sensors 212 are provided for the substrate shaped member 211. For example, the top surface of the substrate shaped member 211 is divided into a plurality of regions, and a SAW sensor 212 is provided corresponding to each divided region. The SAW sensor 212 has a communication function that enables wireless communication with the reader antenna 220.

[0044] The SAW sensor 212 receives the electrical signal transmitted by the reader antenna 220 and transmits to the reader antenna 220 an electrical signal (communication signal) including identification information for identifying the SAW sensor 212 and temperature information measured by the SAW sensor 212 .

[0045] 4 shows an enlarged example of the SAW sensor 212. The SAW sensor 212 is composed of a SAW device 213 and a tag antenna 214. The SAW device 213 has, for example, a comb-shaped electrode 213a on a piezoelectric substrate. The electrode 213a has electrodes 213a1 and 213a2 made of metal thin films, and is formed into a comb shape by inserting the convex parts of each electrode into the concave parts of each electrode from opposite directions. An electrode member 215 electrically connected to the electrodes 213a1 and 213a2 is disposed on the tag antenna 214.

[0046] A voltage is applied between the electrodes 213a1 and 213a2 from the electrode member 215. When an electric signal transmitted from the reader antenna 220 is input, the crystal particles (atoms) constituting the SAW device 213 are subjected to stress due to the piezoelectric effect of the piezoelectric substrate of the SAW device 213 on which the electrode 213a is formed, and move closer to or farther away from each other due to the piezoelectric effect. This causes the surface of the SAW sensor 212 to vibrate in a wavy manner.

[0047] The distance between electrode 213a1 and electrode 213a2 differs for each SAW sensor 212. In other words, the SAW sensors 212 have the same configuration of SAW device 213 and tag antenna 214, but only the distance between electrode 213a1 and electrode 213a2 differs. With this configuration, of the electrical signals input to electrode 213a, an electrical signal having a frequency specific to each SAW sensor 212, which corresponds to the distance between electrode 213a1 and electrode 213a2, becomes stronger due to resonance and is propagated to the outside.

[0048] The reader antenna 220 transmits an electrical signal in a predetermined frequency band. In addition, the reader antenna 220 receives an electrical signal of a desired frequency selectively extracted from each of the SAW sensors 212 in response to the transmitted electrical signal. The temperature measuring device 200 predicts a temperature based on a change in frequency of the electrical signal output by each of the SAW sensors 212. In addition, since a different resonant frequency is assigned to each of the SAW sensors 212, it is possible to determine at which position of the SAW sensor 212 the predicted temperature is located, based on the resonant frequency included in the electrical signal output by the SAW sensor 212. This allows the substrate-type temperature sensor 210 to predict the temperature at each position of the SAW sensor 212.

[0049] An opening 18 is formed in the top plate 11 of the second processing region P2. In addition, dielectric windows 18a, 18b made of quartz or the like are provided in the opening 18 via a sealing member (not shown), and the opening 18 is airtightly closed. A reader antenna 220 is provided outside the chamber 1 in correspondence with the opening 18. In addition, in FIG. 2, an example of the position where the reader antenna 220 is provided (the position where the opening 18 and the dielectric windows 18a, 18b are provided) is shown by a two-dot chain line. That is, the reader antenna 220 is disposed so that the substrate-type temperature sensor 210, which moves with the rotation of the turntable 2, passes under the reader antenna 220.

[0050] 2, the position where the opening 18 and the dielectric windows 18a, 18b are provided is illustrated as the second processing region P2, but this is not limited thereto and may be the first processing region P1 or the separation region D. In addition, in FIGS. 1 and 2, the position where the opening 18 and the dielectric windows 18a, 18b are provided is illustrated as the top plate 11, but this is not limited thereto and the opening and the dielectric windows may be provided in the side wall of the container body 12.

[0051] The control unit 230 includes a transmitting unit 231, a receiving unit 232, a sensor position estimating unit 233, and a temperature calculating unit 234. The control unit 230 is connected to the reader antenna 220. In addition, the control unit 230 is connected to the control unit 100 so as to be able to communicate with each other.

[0052] The transmitting unit 231 transmits an electrical signal in a predetermined frequency band via the reader antenna 220 .

[0053] The receiving section 232 receives the electrical signal output from the SAW sensor 212 via the reader antenna 220 .

[0054] The sensor position estimation unit 233 acquires a signal from the position sensor 25 via the control unit 100. The sensor position estimation unit 233 calculates the rotation speed of the turntable 2 based on the period of the signal from the position sensor 25. The sensor position estimation unit 233 may acquire the rotation speed of the turntable 2 from the control unit 100. The sensor position estimation unit 233 can then calculate the rotation angle of the turntable 2 based on the elapsed time from the timing of acquiring the signal from the position sensor 25 and the rotation speed of the turntable 2. That is, the sensor position estimation unit 233 can estimate the position of the substrate-type temperature sensor 210 (SAW sensor 212) arranged in the recess 24 of the turntable 2. In other words, the sensor position estimation unit 233 can estimate the positional relationship between the reader antenna 220 and the substrate-type temperature sensor 210 (SAW sensor 212).

[0055] The temperature calculation section 234 calculates the temperature measured by the SAW sensor 212 based on the electrical signal output from the SAW sensor 212 and received by the receiving section 232 .

[0056] <Temperature measurement process> Next, a temperature measurement process using the temperature measurement device 200 in the substrate processing apparatus will be described with reference to Fig. 5. Fig. 5 is a flowchart showing an example of a temperature measurement process using the temperature measurement device 200. Note that the process of the flowchart shown in Fig. 5 is performed, for example, when generating a recipe or the like for a production process before a production process in which a desired process is performed on a wafer in the substrate processing apparatus.

[0057] Here, a substrate-type temperature sensor 210 is disposed in a recess 24 of the turntable 2. The substrate-type temperature sensor 210 is transported from the transport port 15 to the chamber 1 by an external transport arm 10, similar to a wafer, and the substrate-type temperature sensor 210 is delivered between the turntable 2 and the chamber 1.

[0058] In step S101, the control unit 100 controls the driving unit 23 to start rotating the susceptor (the rotating table 2). The control unit 100 of the substrate processing apparatus and the control unit 230 of the temperature measuring apparatus 200 are communicatively connected, and a detection signal of the position sensor 25 is input to the control unit 230. The transmitting unit 231 transmits an electric signal of a predetermined frequency band from the reader antenna 220. That is, the transmitting unit transmits an electric signal of a frequency band including the resonant frequencies of all the SAW sensors 212. The receiving unit 232 receives the electric signal output from the SAW sensor 212 via the reader antenna 220.

[0059] In step S102, the control unit 230 judges whether or not it is the timing when the SAW sensor 212 is directly under the reader antenna 220. Here, the sensor position estimation unit 233 of the control unit 230 estimates the rotation angle of the turntable 2 (the positional relationship between the reader antenna 220 and the substrate type temperature sensor 210 and the SAW sensor 212) based on the detection signal of the position sensor 25 (the time elapsed since the detection signal of the position sensor 25 was detected). As a result, the control unit 230 judges whether or not it is the timing when the SAW sensor 212 is directly under the reader antenna 220.

[0060] If it is not the timing when the SAW sensor 212 is directly below the reader antenna 220 (S102. No), the control unit 230 repeats the process of step S102. If it is the timing when the SAW sensor 212 is directly below the reader antenna 220 (S102. Yes), the control unit 230 proceeds to the process of step S103.

[0061] In step S103, the control unit 230 performs a communication acquisition process between the reader antenna 220 and the SAW sensor 212. Here, the transmission unit 231 transmits an electrical signal of a predetermined frequency band (a frequency band including the resonant frequencies of all the SAW sensors 212) via the reader antenna 220. The SAW sensor 212 receives the electrical signal from the reader antenna 220 and transmits an electrical signal of a resonant frequency including temperature information. The reception unit 232 receives the electrical signal via the reader antenna 220. Here, the reception unit 232 acquires an electrical signal of a frequency band corresponding to the SAW sensor 212 determined to be directly under the reader antenna 220 in step S102, from among the electrical signals received via the reader antenna 220.

[0062] In step S104, the control unit 230 determines whether or not a communication abnormality occurs. Here, the control unit 230 obtains a peak intensity in the electrical signal acquired in step S103 (an electrical signal in a frequency band corresponding to the SAW sensor 212 determined to be located directly under the reader antenna 220), and determines that a communication abnormality occurs if the peak intensity is less than a predetermined threshold value.

[0063] If it is determined that a communication abnormality has occurred (S104: Yes), the process of the control unit 230 proceeds to step S105. In step S105, the control unit 230 issues an alarm. Then, the process of the control unit 100 proceeds to step S108. In step S108, the control unit 100 controls the drive unit 23 to stop the rotation of the susceptor (rotary table 2), and ends the process.

[0064] If it is determined that there is no communication abnormality (S104: No), the process of the control unit 230 proceeds to step S106.

[0065] In step S106, the control unit 230 performs a temperature calculation process for the SAW sensor 212. Here, the temperature calculation unit 234 of the control unit 230 calculates the measured temperature of the SAW sensor 212 determined to be directly below the reader antenna 220 in step S102 based on the electrical signal captured in step S103 (the electrical signal in the frequency band corresponding to the SAW sensor 212 determined to be directly below the reader antenna 220). Here, the temperature calculation unit 234 finds a peak frequency that becomes a peak in the electrical signal in the frequency band corresponding to the SAW sensor 212 determined to be directly below the reader antenna 220, and calculates the measured temperature based on the peak frequency.

[0066] In step S107, the control unit 230 determines whether or not the temperature measurement process has been completed. If the temperature measurement process has not been completed (S107: No), the process of the control unit 230 returns to step S102 and the temperature measurement process is repeated.

[0067] If the temperature measurement process is completed (S107: Yes), the process of the control unit 230 proceeds to step S108. In step S108, the control unit 100 controls the driving unit 23 to stop the rotation of the susceptor (the turntable 2), and the process ends.

[0068] 6 is a time chart showing an example of the temperature measurement process. In FIG. 6, the horizontal axis indicates the passage of time, and an example of the strength of the signal from the position sensor 25, the communication acquisition process in step S103, and the communication signal between the reader antenna 220 and the SAW sensor 212 is shown.

[0069] The substrate-type temperature sensor 210 is placed in a recess 24 of the turntable 2 which rotates within the chamber 1. For this reason, when the SAW sensor 212 is placed at a position away from the reader antenna 220, the strength of the communication signal between the reader antenna 220 and the SAW sensor 212 is weak. Then, as the turntable 2 rotates, the strength of the communication signal increases around the time when the SAW sensor 212 is directly below the reader antenna 220.

[0070] The control unit 230 performs communication acquisition processing after a predetermined time has elapsed since the timing at which the position sensor 25 detected a signal (in other words, after the turntable 2, which rotates at a uniform speed, has rotated a predetermined angle). In other words, the control unit 230 acquires the electrical signal from the SAW sensor 212 at a timing synchronized with the rotation of the turntable 2, and calculates the temperature. This makes it possible to stabilize the communication by increasing the communication strength between the reader antenna 220 and the SAW sensor 212 and stabilizing the communication, thereby stabilizing the temperature measurement.

[0071] Furthermore, by using the SAW sensor 212 as the temperature sensor, it is possible to eliminate the need for a battery in the substrate-type temperature sensor 210 disposed in the chamber 1. This makes it possible to measure the temperature even in a process in which the temperature inside the chamber 1 becomes high (for example, 150° C. or higher).

[0072] Furthermore, by using the SAW sensor 212 as a temperature sensor, the temperature detection accuracy can be improved compared to the case where a radiation thermometer is used, for example.

[0073] Note that a plurality of openings 18, dielectric windows 18a and 18b, and reader antenna 220 may be provided. This allows the temperature to be measured multiple times during one rotation of the turntable 2. Therefore, even if the rotation speed of the turntable 2 is low, the time interval for measuring the temperature can be shortened.

[0074] Also, in step S103, the timing for acquiring the electrical signal has been described as being the timing at which it is determined that the SAW sensor 212 is directly below the reader antenna 220, but this is not limited to this. The timing for acquiring the electrical signal may be before or after the SAW sensor 212 is directly below the reader antenna 220. This makes it possible to increase the communication strength between the reader antenna 220 and the SAW sensor 212 and stabilize the communication, thereby stabilizing the temperature measurement.

[0075] The above describes the temperature measurement method using the temperature measuring device 200. However, the present disclosure is not limited to the above-described embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the claims. [Explanation of symbols]

[0076] 1. Chamber 2 Rotating table 18 Openings 18a, 18b Dielectric window 22 Rotation axis 23 Drive unit 24 Recess 25 Position Sensor 100 Control section 200 Temperature measuring device 210 Substrate type temperature sensor 211 Substrate-shaped components 212 SAW Sensor 220 Reader Antenna 230 Control Unit 231 Transmitter 232 Receiving section 233 Sensor position estimation unit 234 Temperature calculation section P1 First processing area P2 Second processing area D separation area

Claims

1. A substrate processing apparatus comprising a chamber and a rotary table provided within the chamber and having a plurality of substrate mounting sections on an upper surface thereof, the substrate processing apparatus performing substrate processing by mounting a substrate on the substrate mounting sections, the temperature measuring device measuring a temperature of a substrate shaped member mounted on the substrate mounting sections when the substrate processing apparatus is not performing the substrate processing, one or more substrate-type temperature sensors each having a plurality of SAW sensors for detecting the temperature of the substrate-shaped member and the substrate-shaped member, the substrate-type temperature sensors being placed on the substrate placement portion of the rotating table; An antenna for transmitting and receiving electrical signals; a transmitter that transmits an electrical signal in a predetermined frequency band including a resonant frequency of the SAW sensor via the antenna; a receiving unit that receives an electrical signal transmitted from the SAW sensor via the antenna; a temperature calculation unit that calculates a detected temperature of the SAW sensor based on the electrical signal received by the receiving unit; a position sensor that outputs a signal when the rotary table is located at a predetermined home position; The transmission unit is While the rotary table is rotating, an electrical signal in the frequency band is transmitted regardless of a rotational position of the rotary table; The receiving unit is After a predetermined time has elapsed since the position sensor output a signal, the electrical signal received by the antenna is acquired; The temperature calculation unit is calculating a detected temperature of the SAW sensor based on the electrical signal received by the receiving unit; Temperature measuring device.

2. The antenna is disposed outside the chamber and receives an electrical signal transmitted from the SAW sensor through an opening provided in the chamber. The temperature measuring device of claim 1 .

3. The SAW sensor receives the electrical signal transmitted by the antenna and transmits an electrical signal including temperature information detected by the SAW sensor. The temperature measuring device according to claim 1 or 2.

4. In a substrate processing apparatus comprising a chamber and a rotary table provided within the chamber and having a plurality of substrate mounting sections on an upper surface thereof, the substrate processing apparatus performs substrate processing by mounting a substrate on the substrate mounting sections, the temperature measuring method being for measuring a temperature of a substrate shaped member mounted on the substrate mounting sections at a time when the substrate processing apparatus is not performing the substrate processing, comprising: The temperature measuring device is a transmitting section that transmits an electrical signal in a predetermined frequency band including a resonant frequency of the SAW sensor via the antenna; a receiving section that receives the electrical signal transmitted from the SAW sensor via the antenna; a temperature calculating section that calculates a detected temperature of the SAW sensor based on the electrical signal received by the receiving section; and a position sensor that outputs a signal when the turntable is positioned at a predetermined home position, the transmitting unit transmits an electrical signal in the frequency band regardless of a rotational position of the turntable while the turntable rotates, the receiving unit receives the electrical signal received by the antenna after a predetermined time has elapsed since the position sensor output a signal, The temperature calculation unit calculates a detected temperature of the SAW sensor based on the electrical signal received by the receiving unit. Temperature measurement method.

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