Plasma Sources for Semiconductor Processing

Abstract

The present technology encompasses a plasma source including a first plate defining a first plurality of apertures arranged in a first set of rows. The first plate may include a first set of electrodes extending along separate rows of the first set of rows. The plasma source may include a second plate defining a second plurality of apertures arranged in a second set of rows. The second plate may include a second set of electrodes extending along separate rows of the second set of rows. Each aperture of the second plurality of apertures may be axially aligned with one aperture of the first plurality of apertures. The plasma source may include a third plate positioned between the first plate and the second plate. The third plate may define a third plurality of apertures.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. patent application Ser. No. 16 / 937,106, entitled “PLASMA SOURCE FOR SEMICONDUCTOR PROCESSING,” filed July 23, 2020, which is incorporated by reference in its entirety.

[0002] Technical Field The present technology relates to semiconductor systems, processes and equipment, and more particularly to plasma sources integrated into semiconductor processing chambers and utilized in semiconductor processing. [Background technology]

[0003] Many substrate processing systems use plasma generating sources during semiconductor substrate processing. Plasma sources are utilized in processes that generate radical emissions that can facilitate deposition, etching, and cleaning, among other operations in semiconductor processing. Plasma sources are often limited within a particular operating regime, which may be limited by power, chamber pressure, or various other aspects of semiconductor processing. While various sources operating on different principles, such as microwave excitation and capacitive or inductive coupling, can offer different performance advantages, each of these systems may be limited in one or more ways. As semiconductor processing involves more complex operations that require more precise uniformity, many conventional plasma sources may not be able to produce the desired results.

[0004] Thus, there is a need for improved systems, components, and methods that can be used to improve semiconductor processing results and uniformity. The present technology addresses these and other needs. Summary of the Invention

[0005] The present technology encompasses a plasma source including a first plate defining a first plurality of apertures arranged in a first row set. The first plate can include a first electrode set. Each electrode of the first electrode set can extend along a separate row of the first row set. The plasma source can include a second plate defining a second plurality of apertures arranged in a second row set. The second plate can include a second electrode set. Each electrode of the second electrode set can extend along a separate row of the second row set. Each aperture of the second plurality of apertures can be axially aligned with one aperture of the first plurality of apertures. The plasma source can include a third plate positioned between the first plate and the second plate. The third plate can define a third plurality of apertures. Each aperture of the third plurality of apertures can be axially aligned with one aperture of the first plurality of apertures and one aperture of the second plurality of apertures.

[0006] In some embodiments, the apertures of the first plurality of apertures, the apertures of the second plurality of apertures, and the apertures of the third plurality of apertures, each axially aligned, may form a plasma cell extending through the plasma source. The source may include a first power supply electrically coupled to each electrode of the first electrode set. The first power supply may be configured to provide a first voltage along each electrode of the first electrode set. The source may include a second power supply electrically coupled to each electrode of the second electrode set. The second power supply may be configured to provide a second voltage along each electrode of the second electrode set. The first power supply and the second power supply may be configured to generate a discharge in a plasma cell located at the overlapping electrodes of the first electrode set and one electrode of the second electrode set, each receiving power. Each aperture of the first plurality of apertures may be characterized by a first diameter, and each aperture of the third plurality of apertures may be characterized by a second diameter different from the first diameter. Each electrode of the first electrode set may be maintained electrically isolated from each other electrode of the first electrode set along a surface of the first plate. Each electrode of the first electrode set may extend along a first surface of the first plate. Each electrode of the first electrode set may further extend along a sidewall of each aperture of the first plurality of apertures that intersects the associated electrode. The source may include a layer of dielectric material covering the electrode material extending along the sidewall of each aperture of the first plurality of apertures.

[0007] Some embodiments of the present technology may include a semiconductor processing chamber. The chamber may include a substrate support configured to support a substrate for processing and at least partially defining a processing region from below. The chamber may include a plasma source positioned within the semiconductor processing chamber. The plasma source may include a first plate defining a first aperture. The plasma source may include a first electrode extending across a surface of the first plate and intersecting the first aperture. The plasma source may include a second plate defining a second aperture, the second aperture may be coaxial with the first aperture. The plasma source may include a second electrode extending across a surface of the second plate and intersecting the second aperture. The second electrode may extend perpendicular to the first electrode. The plasma source may include a third plate positioned between the first plate and the second plate. The third plate may define a third aperture coaxial with the first aperture and the second aperture to form a channel through the plasma source.

[0008] In some embodiments, the first electrode can extend around a sidewall of the first aperture and the second electrode can extend around a sidewall of the second aperture. The chamber can include a first power source configured to provide a first voltage along the first electrode. The chamber can include a second power source configured to provide a second voltage along the second electrode. The chamber can include a first dielectric material covering a portion of the first electrode extending around the sidewall of the first aperture. The chamber can include a second dielectric material covering a portion of the second electrode extending around the sidewall of the second aperture. The first aperture can be characterized by a first diameter and the third aperture can be characterized by a second diameter different from the first diameter. The plasma source can define, at least in part, the processing region from above. The first aperture can be one aperture of the first plurality of apertures. The first electrode can be one electrode of the first plurality of electrodes. Each aperture of the first plurality of apertures may intersect with one electrode of the first plurality of electrodes.

[0009] Some embodiments of the present technology may include a method of semiconductor processing. The method may include providing a precursor to a semiconductor processing chamber. The semiconductor processing chamber may have a plasma source including a first plate defining a first aperture. The plasma source may include a first electrode extending across a surface of the first plate and intersecting the first aperture. The plasma source may include a second plate defining a second aperture. The second aperture may be coaxial with the first aperture. The plasma source may include a second electrode extending across a surface of the second plate and intersecting the second aperture. The second electrode may extend perpendicular to the first electrode. The plasma source may include a third plate positioned between the first plate and the second plate. The third plate may define a third aperture coaxial with the first aperture and the second aperture to form a channel through the plasma source. The plasma source can include a first power supply configured to provide a first voltage along the first electrode. The plasma source can include a second power supply configured to provide a second voltage along the second electrode. The method can include providing a first voltage along the first electrode. The method can include forming a plasma of the precursor in a channel through the plasma source.

[0010] In some embodiments, the method may include providing a first voltage along the first electrode prior to delivering the precursor. The method may include providing a second voltage along the second electrode to generate a memory charge in the channel through the plasma source. The first electrode may extend around a sidewall of the first aperture. The second electrode may extend around a sidewall of the second aperture. The plasma source may also include a first dielectric material covering a portion of the first electrode that extends around the sidewall of the first aperture. The plasma source may also include a second dielectric material covering a portion of the second electrode that extends around the sidewall of the second aperture. A breakdown voltage in the channel formed through the plasma source may be about 500V or less.

[0011] Such techniques can provide many advantages over conventional systems and techniques. For example, plasma sources according to embodiments of the present technique can operate over a wider pressure regime than conventional sources. Moreover, the sources can operate to improve the in situ uniformity of operations performed on a semiconductor substrate. These and other embodiments, together with their many advantages and features, will be described in more detail in conjunction with the following description and accompanying drawings.

[0012] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief description of the drawings]

[0013] [Figure 1] 1 is a schematic top view of an exemplary processing system in accordance with some embodiments of the present technique; [Diagram 2] 1 is a schematic cross-sectional view of an exemplary processing system in accordance with some embodiments of the present technique; [Diagram 3] 1 is a schematic partial cross-sectional view of an exemplary processing chamber in accordance with some embodiments of the present technique; [Figure 4] 1 is a schematic top view of an exemplary plasma source in accordance with some embodiments of the present technique; [Diagram 5] 5 is a schematic partial cross-sectional view of an exemplary plasma source taken along line AA of FIG. 4 in accordance with some embodiments of the present technique. [Figure 6] 1 is a schematic cross-sectional view of an exemplary plasma source in accordance with some embodiments of the present technique; [Figure 7] FIG. 1 is a schematic top view of an exemplary cell of a plasma source in accordance with some embodiments of the present technique; [Figure 8] 1 is a schematic cross-sectional view of an exemplary plasma source in accordance with some embodiments of the present technique; [Figure 9] 1 illustrates selected operations in a method for processing a semiconductor substrate in accordance with some embodiments of the present technique. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Some figures are included as schematics. It is understood that the drawings are for illustrative purposes and should not be considered to scale unless specifically stated to scale. Furthermore, as schematics, the drawings are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0015] In the accompanying drawings, similar components and / or features may have the same reference numbers. Furthermore, various components of the same kind may be distinguished according to the reference numbers, with a letter distinguishing between the similar components. If only a first reference number is used in this specification, the description is applicable to any of the similar components having the same first reference number, regardless of the letter.

[0016] Plasmas used in semiconductor processing are often limited to a certain pressure range, which typically ranges from a few mTorr to a few Torr (e.g., less than 20 Torr). As device architectures become more complex, higher pressure plasmas may improve operational capabilities. However, conventional sources are limited to a discrete pressure range, and in many cases, the source generation cannot be extended to higher pressures. Furthermore, as the pressure increases, process uniformity may be challenged. This may be due to the fact that many conventional plasma sources include one or two antennas, which may not be able to distribute the species uniformly on the substrate at high pressures, where diffusion may be slow. Some conventional plasma sources that operate at relatively low pressures, such as a few Torr, may utilize a grid to neutralize ions, but this device in an attempt to improve plasma uniformity is limited to minimize non-uniformity of the plasma product on the grid.

[0017] The technology encompasses plasma sources that are compatible with a variety of chamber architectures and capable of sustaining plasma from less than 1 Torr to more than 50 Torr in configurations that can be scaled to virtually any substrate size. The plasma source can include hundreds or thousands of individual plasma sources assembled in a planar configuration such that incoming process precursors pass through individual cells and the precursors are energized at each location. The sources can be driven from one or more RF generators for capacitively coupled plasma discharge versions, or from a low frequency square wave AC generator for dielectric barrier discharge versions. This allows for control of the discharge on an individual cell basis, using addressing to control the average power applied to each cell.

[0018] The present technology overcomes many conventional problems by utilizing a plasma source that operates with a dielectric barrier discharge formed in one or more cells formed by the plasma source. By controlling the electrode distance along the plasma source, the voltage can be reduced compared to many conventional plasma sources, which may expand the pressure operating window of the exemplary source. Furthermore, by generating a number of independently operating plasma cells through the source, the characteristics on the wafer can be adjusted in situ and in a feed-forward process that can utilize the results of processing operations to modify the plasma generation through the source without having to adjust the plasma source itself. For example, while many conventional plasma sources can adjust the aperture size to increase or decrease the substrate level impact of a particular semiconductor process, the present technology can modify the plasma pulse through any number of plasma cells to modify the various processes being performed.

[0019] The rate of energy transfer to electrons and the rate of plasma generation may depend on the reduced electric field in the gas, which may be inversely proportional to the gas pressure. Thus, the overall balance condition, including the voltage, may depend on the product of pressure and plasma characteristic size. However, at lower and higher pressures, the plasma becomes difficult to maintain, and the voltage needs to be increased. Thus, to operate the plasma at high pressures, the present technology can significantly reduce the size of the source by utilizing many small interconnected sources instead of one. Advantageously, these individual sources can be controlled separately. Replacing one large source with many small sources can also simplify the chamber architecture and reduce the number of control elements that can be used to increase process uniformity.

[0020] The basic element of the technology or the concept of the mini-source can be based on a simple cylindrical design that can be used for both RF capacitively coupled plasma operation and dielectric barrier discharge operation, as further explained below. The arrangement of the individual cells can make it possible to avoid plasma contamination by electrode materials. When power is applied to the electrodes of the source, discharge conditions can be met within the channels, allowing plasma generation, while limiting or preventing plasma generation outside the individual channels formed.

[0021] The individual sources can be arranged in a grid-like configuration, with all the top electrodes connected together and all the bottom electrodes connected together with a spacer that fills the space between the top and bottom electrodes, so that the precursors flow only through the individual cells and the discharge can be controlled to occur within the cells. The sources can be made in a variety of ways. For example, in some embodiments, the individual electrodes, either the top or bottom electrodes, can be made of a single plate of conductive material with holes for the channels, with a spacer between them defining the gap size together with protective plates on the top and bottom sides of the sources, as described below. The surface of each hole can be coated with a dielectric, which can be deposited and inserted as a tube to limit the discharge outside the channel. Cooling can also be applied in any number of ways, for example by adjusting the thickness and connecting the electrode plate with a cooled part of the chamber body.

[0022] The electrodes can be included as plates or deposited as films in many ways, which can provide many connection advantages. For example, depositing a conductive film on a dielectric plate to create electrodes for the cells inside the holes and connecting them provides the opportunity to connect the cell electrodes, such as the scan electrodes, in rows, and connect a second electrode, such as the bulk electrode, all at once. This allows all the bulk electrodes to be connected to one terminal of the power supply and the scan electrodes to the other terminal of the power supply through a control board, which may allow all the scan lines to be connected at the same time to achieve uniform plasma generation, or to generate discharges only on some of the lines. Furthermore, both the top and bottom electrodes may be formed with lines that run perpendicular to each other, which may allow plasma generation not only along individual lines, but also within individual cells, addressing a selection of cells across the source when applying power to all cells together. In one non-limiting example, each cell may include three electrodes, including a bulk electrode, a scan electrode, and an address electrode next to the scan electrode, along with an additional dielectric layer that separates the electrodes. The bulk electrodes may all be connected together, while the scan and address electrodes may extend perpendicular to each other. As explained below, the address electrodes may be used for addressing only, while the bulk and scan electrodes may be used to both maintain and reset each cell before it is addressed.

[0023] All the cells can be operated independently of each other cell, and slight penetration of particles between cells may not affect the discharge conditions in the cells. Communication between the cells may be limited to applied voltage. In operation, the electrodes may be connected to create a capacitively coupled source or a dielectric barrier discharge. As a capacitively coupled plasma source, the top and bottom electrodes may be driven by a single RF generator and may be matched where all the top electrodes are connected together and all the bottom electrodes are connected together. Furthermore, the electrodes in a scan line may be connected to a common RF source, for example, or may be matched through a controlled switch. Since the power injected into each cell is the same and the power required to drive some of the sources may be proportional to the percentage, the switch controller may have feedback to the RF power generator that may automatically reduce the power when some lines are disconnected. The power of any cell may be controlled by the output voltage of the RF generator.

[0024] In the case of a dielectric barrier discharge, a unipolar high voltage can be applied to the gap of each cell for a period of time during which the discharge ignites, develops, and extinguishes, leaving a "memory" charge on the dielectric wall of the cell that compensates for the electric field from the voltage applied to the electrode. The next pulse in each cell occurs when the voltage to the cell, such as a pixel, is reversed. The memory charge can allow for the generation of a plasma. When the drive voltage is reversed, the combination of the drive voltage and the memory charge induced voltage can be twice the voltage of the drive voltage itself. Thus, by using a drive voltage magnitude lower than the breakdown voltage of the cell, it may be possible to generate a plasma in some cells to drive the source, while other cells without memory charge will not be ignited, since the net voltage across the cells with memory charge is significantly higher than the breakdown voltage. The source can be driven with a square wave from a single voltage DC power supply and a control switch that can alternately connect each electrode to ground or a voltage terminal. A relatively simple drive scheme can be utilized for a source with two bulk electrodes or one bulk electrode and one set of scan line electrodes that may not include addressing. For example, the lines of the switch can be connected to the power supply at one terminal of the power supply, at all lines or at a selected number of lines. The bulk electrode can be connected to the other terminal of the power supply. The power supply can be operated with several levels of sustain voltage, which can be applied to all cells first before applying a higher voltage for the sustain operation by placing an initial memory charge (either a single pulse of voltage from a higher level of the sustain voltage or another voltage above the initial voltage can be applied to address the cells). Furthermore, a change in gas pressure or gas can be used to initiate the single pulse, and the memory charge may not change with the change in pressure or gas.

[0025] The dielectric barrier discharge can be a pulsed discharge that is extinguished every half cycle, allowing for different power control from the capacitively coupled plasma. In each discharge pulse, the energy stored in the cell is proportional to the voltage squared times the capacitance of the cell electrodes, so if the amplitude of the applied voltage remains constant, the energy of all pulses can be the same. The control of the power in each cell can then be controlled by the pulse frequency, and the total energy generated in any cell during the process can be controlled by the total number of pulses. Because the power supply can operate at a fixed voltage, it may not require feedback between the switch and the power supply, as in the capacitively coupled plasma version.

[0026] While the remaining disclosure routinely identifies a particular etching process utilizing the technology of the present disclosure, it will be readily understood that the system and method are equally applicable to a variety of other processes that may occur in the described chambers. For example, the plasma sources encompassed by the present technology may be applicable to deposition, etching, and cleaning chambers that operate at various conditions and perform any number of plasma processes. Thus, the present technology should not be considered limited to use with only the described processes. This disclosure discusses one possible system and chamber that may incorporate the present technology before describing the sources and methods or operations of an exemplary process sequence according to some embodiments of the present technology. It should be understood that the present technology is not limited to the described apparatus, and the discussed processes may be performed in any number of processing chambers and systems.

[0027] 1 illustrates a top view of one embodiment of a deposition, etch, bake, and / or cure chamber processing system 10 according to an embodiment. The tool or processing system 10 illustrated in FIG. 1 can include multiple processing chambers 24a-d, a transfer chamber 20, a service chamber 26, an integrated metrology chamber 28, and a pair of load lock chambers 16a-b. The processing chambers can include any number of structures or components and any number or combination of processing chambers. For example, any one or more processing chambers performing any number of etching, deposition, or other processes can incorporate one or more aspects of the plasma source discussed throughout this disclosure.

[0028] To transfer substrates between chambers, the transfer chamber 20 can include a robotic transport mechanism 22. The transport mechanism 22 can each have a pair of substrate transport blades 22a attached to the distal end of an extendable arm 22b. The blades 22a can be used to transport individual substrates into and out of the processing chambers. In operation, one of the substrate transport blades, such as blade 22a of the transport mechanism 22, can retrieve a substrate W from one of the load lock chambers, such as chambers 16a-b, and transport the substrate W to a first processing stage, such as a processing process as described below for chambers 24a-d. The chambers can be included to perform individual or combinations of operations of the described techniques. For example, one or more chambers can be configured to perform deposition or etching operations, while one or more other chambers can be configured to perform pre-processing operations and / or one or more post-processing operations described. Any number of configurations are included in the present technology, which can also perform any number of additional manufacturing operations typically performed in semiconductor processing.

[0029] If a chamber is occupied, the robot can wait until processing is complete and then remove the processed substrate from the chamber using one blade 22a and insert a new substrate using a second blade. Once the substrate has been processed, it can then be moved to a second stage of processing. At each move, the transport mechanism 22 can generally have one blade carrying the substrate and one empty blade to perform a substrate swap. The transport mechanism 22 can wait at each chamber until the swap is accomplished.

[0030] Once processing is completed in the processing chamber, the transport mechanism 22 can move the substrate W from the last processing chamber and transport the substrate W to a cassette in the load lock chambers 16a-b. From the load lock chambers 16a-b, the substrate can be moved to the factory interface 12. The factory interface 12 can operate to transfer substrates between the pod loaders 14a-d and the load lock chambers 16a-b in a generally atmospheric clean environment. The clean environment in the factory interface 12 can generally be provided through an air filtration process, such as HEPA filtration. The factory interface 12 can also include a substrate orienter / aligner that can be used to properly align the substrate prior to processing. At least one substrate robot, such as robots 18a-b, can be positioned in the factory interface 12 to transport substrates between various locations / locations in the factory interface 12 and to other locations in communication therewith. The robots 18a-b can be configured to move along a track system within the factory interface 12 from a first end to a second end of the factory interface 12.

[0031] The processing system 10 may further include an integrated metrology chamber 28 for providing control signals, which may provide adaptive control for any of the processes being performed in the processing chamber. The integrated metrology chamber 28 may include any of a variety of metrology devices for measuring various film properties, such as thickness, roughness, composition, and the like, which may further characterize lattice parameters, such as critical dimensions, sidewall angles, and feature heights under vacuum, in an automated manner.

[0032] Each of the processing chambers 24a-d can be configured to perform one or more processing steps in the fabrication of semiconductor structures, and any number and combination of processing chambers can be used on the multi-chamber processing system 10. For example, any of the processing chambers can be configured to perform a number of substrate processing operations, including cyclical layer deposition, atomic layer deposition, chemical vapor deposition, physical vapor deposition, as well as any number of deposition processes, including etching, pre-cleaning, pre-treatment, post-treatment, annealing, plasma treatment, degassing, orientation, and other substrate processes. Some specific processes that may be performed in any of the chambers or any combination of the chambers can be metal deposition, surface cleaning and preparation, thermal annealing such as rapid thermal processing, and plasma treatment. Any other process can be performed in a specific chamber incorporated within the multi-chamber processing system 10 as well, including any of the processes described below, as will be readily recognized by those skilled in the art.

[0033] FIG. 2 shows a schematic cross-sectional view of an exemplary processing chamber 100 according to some embodiments of the present technique. A plasma source according to embodiments of the present technique can be incorporated into a chamber such as chamber 100, as well as any processing chamber that may include one or more components as described in chamber 100. Chamber 100 may represent a semiconductor processing chamber and accessories that may be one of many chambers that may be incorporated into system 10 described above. Processing chamber 100 may be used for a variety of plasma processes. In some embodiments, processing chamber 100 may be used to perform dry etching using one or more etchants. For example, processing chambers may be used to ignite plasma from precursors including oxygen-containing precursors, hydrogen-containing precursors, carbon-containing precursors, nitrogen-containing precursors, halogen-containing precursors, or many other precursors that may be used to enhance and remove material from substrate 101.

[0034] The processing chamber 100 may include a chamber body 102, a lid assembly 104, and a support assembly 106. The lid assembly 104 may be positioned on top of the chamber body 102. The support assembly 106 may be housed or at least partially contained within a processing region of the chamber or an interior volume 108 that is at least partially defined by the chamber body 102 and may constitute the processing region of the chamber 100. The chamber body 102 may include a slit valve opening 110 formed or defined in a sidewall thereof. The slit valve opening 110 may be selectively opened and closed to allow access to the processing region or interior volume 108 by a substrate handling robot.

[0035] The chamber body 102 may further include a liner 112 that may surround the support assembly 106. The liner 112 may be removable for maintenance and cleaning. The liner 112 may be made of a metal, such as aluminum, a ceramic material, or any other process compatible material. In some embodiments, the liner 112 may include one or more apertures 114 and a pumping channel 116 (which may be in fluid communication with a vacuum port 118) formed therein. The apertures 114 may provide a flow path for gas to the pumping channel 116. The pumping channel 116 may provide an outlet for gas in the chamber 100 to the vacuum port 118. A vacuum system 120 may be coupled to the vacuum port 118. The vacuum system 120 may include a vacuum pump 122 and a throttle valve 124. The throttle valve 124 may regulate the flow of gas through the chamber 100. The vacuum pump 122 may be coupled to the vacuum port 118 disposed in the interior volume 108.

[0036] The lid assembly 104 may include at least two stacked components configured to form a plasma volume or cavity therebetween. In some embodiments, the lid assembly 104 may include a first electrode 126 or upper electrode disposed vertically above a second electrode 128 or lower electrode. The first electrode 126 and the second electrode 128 may confine a plasma cavity 130 therebetween. The first electrode 126 may be coupled to a power source 132, such as an RF power source. The second electrode 128 may be connected to ground to form a capacitive coupling region between the two electrodes. The first electrode 126 may define or be fluidly coupled to a gas inlet 134. One or more gas inlets may be included to provide one or more precursors into the plasma cavity 130.

[0037] The lid assembly 104 may also include an insulating ring 136 that may electrically insulate the first electrode 126 from the second electrode 128. The insulating ring 136 may be made of aluminum oxide or any other insulating, process compatible material. The lid assembly may also include a gas distribution plate 138 and a blocker plate 140. The second electrode 128, the gas distribution plate 138, and the blocker plate 140 may be stacked and disposed on a lid edge 142, which may be coupled to the chamber body 102.

[0038] In some embodiments, the second electrode 128 may include or define a plurality of gas passages or apertures 144 providing an exit from the plasma cavity 130 to allow effluents from the plasma cavity 130 to flow toward the processing region. The gas distribution plate 138 may include or define a plurality of apertures 146 configured to distribute the flow of gas or plasma effluents into the processing region 108 and into contact with the substrate 101 contained therein. The gas distribution plate 138 may be a plasma source as described further below and may be used instead of or in addition to a remote plasma source installed in the chamber as shown. A blocker plate 140 may optionally be disposed between the second electrode 128 and the gas distribution plate 138. The blocker plate 140 may include or define a plurality of apertures 148 to provide a plurality of gas passages from the second electrode 128 to the gas distribution plate 138 and may provide a lateral or radial distribution of effluents or gases.

[0039] The support assembly 106 may include a support member 180. The support member 180 may be configured to support the substrate 101 for processing. The support member 180 may be coupled to a lift mechanism 182 via a shaft 184, which may extend through a bottom surface of the chamber body 102. The lift mechanism 182 may be flexibly sealed to the chamber body 102 by a bellows 186, which may prevent vacuum leakage around the shaft 184. The lift mechanism 182 may allow the support member 180 to move vertically within the chamber body 102 between a lower transfer position and several elevated processing positions. Additionally, one or more lift pins 188 may be disposed through the support member 180. The one or more lift pins 188 may be configured to extend through the support member 180 such that the substrate 101 may be lifted from a surface of the support member 180. The one or more lift pins 188 may be actuated by a lift ring 190.

[0040] To operate various aspects of the processing chamber, in some embodiments, a controller 191 can be included. The controller 191 can variously include a central processing unit 192 and a memory 194, which can be of any type and can be operated by or in conjunction with any of the accessories 196, as can be included in any of the systems described. The memory 194 can include any number of specific instructions for carrying out one or more aspects of any of the methods or operations described or can be executed in the chamber 100 or any other system.

[0041] FIG. 3 shows a schematic partial cross-sectional view of an exemplary processing chamber 300 according to some embodiments of the present technique. The processing chamber 300 may show a limited configuration including a plasma source for performing etching, deposition, cleaning, or other semiconductor processing operations. The figure may show certain features of the processing chamber that may be included in any processing chamber, such as the gas distribution plate 138 described above. The processing chamber 300 may include any aspect of the system 100 described above and may show additional details of the above-mentioned system, including a plasma source integrated within the chamber. The figure is not intended to limit the present technique in any way, and it should be understood that the plasma source described below may be included in any type of semiconductor or other processing system in which plasma generation may be beneficial. Furthermore, due to the highly configurable nature of the plasma source according to some embodiments of the present technique, the chamber architecture may be significantly simplified over conventional designs, as the source may be integrated into virtually any chamber configuration, including the basic chamber architecture as illustrated.

[0042] The processing chamber 300 may include the general aspects of a processing chamber incorporating a plasma source configured to operate by dielectric barrier discharge to generate a plasma effluent of a precursor delivered into the processing chamber. Any number of additional components may be incorporated into the processing chamber, including a blocker plate, distributor, heating or cooling components, a remote plasma source, a pumping system, a controller, or many other features of a semiconductor processing chamber. An exemplary processing chamber may include a substrate support 305 and a plasma source 310. The substrate support 305 may be configured to support a substrate 306 for processing in a substrate processing region 308. As shown, the substrate support 305 may at least partially define the substrate processing region from below. The substrate support 305 may include any additional features including the translation and rotation features described above, as well as a number of incorporated components including heating or cooling features and electrodes, such as bias electrodes. The substrate support 305 may include any features of the support assembly 106 described above, as well as any other substrate support features that may facilitate chucking and / or processing of the substrate 306.

[0043] The processing chamber 300 may also include a plasma source 310 that may be positioned within the processing chamber and may also operate as a gas distribution plate to supply one or more precursors to the processing region 308 for contact with the substrate 306. Thus, in some embodiments, the plasma source 310 may at least partially define the processing region 308 from above and may provide a fluid connection to the processing region within the processing chamber. For example, one or more precursors may be supplied into the chamber through one or more inlets. As mentioned above, any number of additional components may be included to facilitate uniform distribution throughout the chamber and may operate as chokes or baffles to facilitate radial and / or lateral distribution of the precursors. The plasma source 310 may define one or more apertures 312 extending therethrough to ultimately distribute the precursors for an operation on the substrate 306, such as etching or deposition, or for other processing operations.

[0044] The plasma source 310 may include one or more electrodes operable to generate plasma within an aperture 312 defined therethrough. As described further below, by utilizing one or more electrodes, each aperture may operate as a cell that may operate independently from other cells or may operate in conjunction throughout the source. Figure 4 shows a schematic top view of an exemplary plasma source 310 according to some embodiments of the present technique, and may show a schematic diagram illustrating some components and configurations of a dielectric barrier discharge plasma source according to some embodiments of the present technique.

[0045] The plasma source 310 can include a source substrate 405 through which one or more apertures 410, including a plurality of apertures, can be defined. The source substrate 405 can include one or more plates and can be characterized by any number of shapes, as described further below. For example, the source substrate 405 can be characterized by a rectilinear shape, as shown, as well as any elliptical or arcuate shape, as well as other shapes that can facilitate incorporation into a substrate processing chamber. The source substrate 405 can be or include any number of materials, including dielectric materials, in some embodiments. For example, the source substrate 405 can be or include any number of dielectric or ceramic materials, such as one or more oxides, nitrides, or carbides, carbonates, or other base materials. The materials can include silicon, carbon, aluminum, sodium, magnesium, tungsten, yttrium, zirconium, or any combination of these or other elements, such as transition metal elements, that can operate or withstand the processing environment in a semiconductor processing chamber.

[0046] The apertures 410 defined through the plasma source can be arranged in any pattern and can include any type of grid as shown. For example, the apertures of the exemplary plasma source 310 can be arranged around an annular protrusion shown on the source substrate 405, which can indicate the location of a substrate positioned downstream of the plasma source, such as substrate 306 described above. The apertures can be defined in any number of patterns that can be linear with respect to the associated substrate, or any other pattern that can provide distribution of precursors to a substrate processing region for interaction with the substrate during processing. Moreover, while shown in an XY grid pattern based on electrode position, as described below, additional or alternative distributions can be utilized, including radial distributions that can be formed along r, θ, or polar coordinate systems, among other arrangements of aspects of the plasma source. The apertures included are not intended to limit any number of apertures incorporated within the exemplary source and can extend beyond or within a region corresponding to a substrate during processing, or other arrangements of apertures. An exemplary plasma source can include one or more apertures through the source, and can include tens, hundreds, or thousands of apertures defined through the source in any range of dimensions of a substrate for semiconductor processing, including hundreds of millimeters or less to meters or more. The apertures 410 can be formed to any size or diameter and can be characterized by a consistent diameter or a varying diameter throughout the plasma source. In some embodiments, the apertures 410 can be characterized by a diameter of about 10 mm or less, about 9 mm or less, about 8 mm or less, about 7 mm or less, about 6 mm or less, about 5 mm or less, about 4 mm or less, about 3 mm or less, about 2 mm or less, or smaller.

[0047] The plasma source 310 may also include one or more electrodes, including multiple electrodes, that extend across the source substrate 405 and intersect one or more apertures 410 defined through the source. In embodiments, the electrodes may be operated to generate discharges within the apertures through the source, which may generate multiple plasma cells into which one or more precursors may be delivered and plasma enhanced. The electrodes may include a first electrode set including one or more first electrodes 415 and a second electrode set including one or more second electrodes 420. The second electrodes may be positioned at an offset angle from the first electrodes, including being positioned perpendicular to the first electrodes as shown in some embodiments. The second electrodes 420 are shown in hidden view because the second electrodes may be positioned in a different plane through the plasma source than the first electrodes 415. For example, in some embodiments, the second electrodes 420 may overlap the first electrodes 415, although the second electrodes may also be maintained physically separated from each of the first electrodes 415. Each of the first electrodes 415 and each of the second electrodes 420 may be physically and / or electrically isolated from the other electrodes of the plasma source 310, which may allow for independent operation of the electrodes according to some embodiments of the present technique. As with the apertures, an exemplary plasma source according to embodiments of the present technique may include any number of first electrodes and second electrodes, including one or more, and in embodiments of the present technique may include tens, hundreds, or thousands of electrodes.

[0048] As shown, the first electrode 415 can be coupled to a first power supply 417 and the second electrode 420 can be coupled to a second power supply 422. Either or both power supplies can be operated by the controller 191 or some other system controller as described below. The coupling can include electrodes extending from the substrate in some embodiments and / or can include extensions of the power supplies contacting the electrode material on the source substrate. Additional electrical connections or other electrical couplings can be included from each power supply to the opposite side of the source substrate to facilitate voltage delivery along each individual electrode. In some embodiments, the first power supply 417 and the second power supply 422 can be a single power supply that provides multiple different outputs as well as the ability to provide different voltages between different coupled electrodes. Whether a single power supply or multiple power supplies, the power supply can be electrically coupled to the electrodes and provide a voltage between the electrodes. The power supplies can have multiplexing capabilities that allow for the application of a voltage to any individual electrode coupled to the power supply, which in some embodiments can result in the delivery of a single voltage or range of voltages. In some embodiments, the first power supply 417 can be configured to supply a first voltage along one or more of the first electrodes 415, and the second power supply 422 can be configured to supply a second voltage along one or more of the second electrodes 420.

[0049] While the voltage from either power source may be in any range or encompass any voltage, in some embodiments, the first and second power sources may each be configured to provide a voltage of about 500V or less along any electrodes that may be electrically coupled. The voltage provided may be related to a breakdown voltage between any overlapping first and second electrodes, as described further below. For example, while each power source may provide a similar voltage or any voltage within a range, in some embodiments, the first power source may be configured to provide or provide a first voltage along each of the first electrodes, and the second power source may be configured to provide or provide a second voltage along each of the second electrodes, which may be lower than the first voltage. Again, in some embodiments, a single power source may be utilized, which may be configured to provide separate voltages as described. Thus, as described further below, the electrodes may operate in both addressing and sustaining functions in embodiments of the present technology to generate plasma discharge pulses in each individual plasma cell via the plasma source. The electrodes according to the present technology may be or include any number of conductive materials printed or formed across a source substrate. For example, copper, tungsten, molybdenum, nickel, iron, silver, cobalt, gold, or any other metal, including transition metals, can be used as electrodes in some embodiments of the present technology. Many combinations or alloys of materials can be used as well, including, by way of non-limiting example, nickel-cobalt iron alloys, as well as these materials having an additional layer of conductive material deposited on one or more surfaces.

[0050] Turning now to Figure 5, a partial schematic cross-sectional view of an exemplary plasma source 310 through line AA of Figure 4 is shown in accordance with some embodiments of the present technique. It should be understood that the source should not be considered to scale and may include any number of apertures and electrodes as previously discussed. For example, the plasma source 310 may include a source substrate 405 having one or more apertures 410 defined therethrough. The plasma source 310 may also include a set of first electrodes 415 and a set of second electrodes 420 as shown. It should be understood that the plasma source 310 may include any number of apertures and electrodes as previously discussed.

[0051] As shown in the figure, the plasma source 310 may include one or more plates to generate the source substrate 405 in some embodiments of the present technology. The plates may be glued, bonded, sintered, mechanically joined, or otherwise coupled to one another to generate the plasma source 310. In some embodiments, each plate of the one or more plates may be the same material as all other plates in the source, although in some embodiments, different materials may be used for different plates. For example, in some embodiments, the first plate 505 and the second plate 510 may be the same or different material, and each of the first plate 505 and the second plate 510 may be the same or different material as the third plate 515 disposed between the first plate and the second plate. Any plate of the source substrate 405 may be any of the aforementioned materials.

[0052] As shown, the plasma source 310 may include multiple plates joined or formed to produce a monolith in some embodiments. Any of the plates may include a dielectric material or a ceramic material as described above. The plasma source 310 may include a first plate defining one or more apertures 506, including a first plurality of apertures, defined through the first plate. The apertures may be included in any number of arrangements as described above, including a first row set in which a single column is shown, with additional columns as shown in FIG. 4 above. The first plate may also include one or more electrodes 415, including a first set, one electrode 415a shown in the cross section shown. The first electrode set 415 may be distributed along the first row set, and each electrode of the first electrode set may intersect at least one aperture of the first plurality of apertures 506.

[0053] The plasma source 310 may include a second plate 510 defining one or more apertures 512, including a second plurality of apertures, defined through the second plate. The apertures may be arranged in any number of arrays, including a second row set that may be similar or identical to the first row set, in some embodiments. As shown, each second aperture 512 may be axially aligned or coaxial with a first aperture 506, and in some embodiments, the second plate 510 may define the same number of apertures as the first plate 505. The plasma source 310 may also include a third plate 515 positioned between the first plate 505 and the second plate 510. The third plate 515 may define one or more apertures 516, including a third plurality of apertures. The third plate 515 can define the same number of apertures as the other plates, and each third aperture 516 can be axially aligned or coaxial with a corresponding first aperture 506 and / or a corresponding second aperture 512. As shown, each of the axially aligned apertures of the first aperture 506, the second aperture 512, and the third aperture 516 can form a channel extending through the plasma source 310. Each of these channels can be an individual plasma cell that can individually have a plasma formed therein by operation of the electrodes.

[0054] The plasma source 310 may include one or more electrodes 420, including a second set of electrodes, which may extend perpendicularly from the first electrode 415 or at some other angle offset from the first electrode 415. Thus, the electrodes 420 may extend through the page in the orientation shown, with electrodes 420a, 420b, 420c, 420d, and 420e shown in the cross-sectional view shown. The second set of electrodes 420 may be distributed along a second set of rows, with each electrode of the second set of electrodes intersecting at least one aperture of the plurality of second apertures 512. Each of the first electrodes 415 and each of the second electrodes 420 may extend separately along an individual row across the source substrate, thereby limiting or preventing contact between any two electrodes across the plasma source. Thus, in some embodiments, each plate of the source is a dielectric material, and each electrode may be electrically and / or physically isolated from each other electrode on the substrate. Of course, in some configurations encompassed by the present technology, any amount of electrical coupling may occur at the power source.

[0055] In some embodiments, one or more additional plates may be included in the plasma source to enclose or protect the sides of the plasma source in some embodiments of the present technology. For example, a fourth plate 517 may be coupled to a surface of the first plate 505 opposite the surface of the first plate 505 coupled to the third plate 515. The fourth plate 517 may define one or more apertures 518, including a fourth plurality of apertures, which may be axially aligned with the apertures of the first plate 505 and the second plate 510. A fifth plate 519 may be coupled to a surface of the second plate 510 opposite the surface of the second plate 510 coupled to the third plate 515. The fifth plate 519 may define one or more apertures 521, including a fifth plurality of apertures, which may be axially aligned with the apertures of the first plate 505 and the second plate 510. The fourth plate 517 and the fifth plate 519 can be made of any of the materials mentioned above and may be the same or a different material as any of the other plates. The plates may provide physical and / or chemical protection to the other plates of the plasma source during semiconductor processing. Furthermore, in some embodiments, the fourth plate 517 and the fifth plate 519 may be a coating applied along the first and third plates, may be a dielectric or other protective coating, or may be spray coated or otherwise applied over the entire plasma source.

[0056] As mentioned above, the first electrode 415 and the second electrode 420 can be formed on different planes via a plasma source, which can prevent shorting between the electrodes. For example, the first electrode 415 can be formed on a first surface of the first plate 505, and the second electrode 420 can be formed on a first surface of the second plate 510. Although shown on a plate, it should be understood that the electrodes according to the present technology can be on the order of a few micrometers or less and can be completely contained by the plate covering the electrodes. Furthermore, in some embodiments, trenches can be formed in the first surfaces of the first plate 505 and the second plate 510 at locations corresponding to each row or pattern, and electrode material can be formed or deposited in the trenches.

[0057] In operation during plasma processing, the electrodes may extend further along the sidewalls of the apertures they intersect, thereby maintaining continuity along each electrode through each aperture and facilitating the formation of individual plasma cells. Thus, each electrode may include an annular component that extends around the interior of each aperture it intersects. As shown, the first electrode 415a may extend along the first surface of the first plate 505 along with each of the other first electrodes 415, and may also extend further along the sidewalls of each aperture 506 formed through the plate and intersecting with the associated electrode 415. Similarly, the second electrodes 420, including each individual second electrode shown, may extend along the surface of the second plate 510 and may also extend further along the sidewalls of each aperture 512 formed through the plate and intersecting with the associated electrode 4205. The electrode material may extend completely or partially through the apertures, and in some embodiments may be formed uniformly through the apertures from a first surface of the plate along which the electrodes are formed to a second surface opposite the first surface. The electrode material may also be formed in the apertures at any thickness, including a thickness of about 100 μm or less, and may be formed at a thickness of about 80 μm or less, about 60 μm or less, about 50 μm or less, about 40 μm or less, about 30 μm or less, about 20 μm or less, about 10 μm or less, about 5 μm or less, or less than that. The separation between the first electrode 415 and the second electrode 420 in each channel or plasma cell may be controlled by the thickness of the plate 515. This gap may define a space for discharge between the two electrodes.

[0058] In embodiments of the present technology, any of the plates of the source 310 can be characterized by a thickness of about 1 cm or less, and can be characterized by a thickness of about 9 mm or less, about 8 mm or less, about 7 mm or less, about 6 mm or less, about 5 mm or less, about 4 mm or less, about 3 mm or less, about 2 mm or less, about 1 mm or less, about 0.5 mm or less, or less. For example, the third plate 515 can be sized to a thickness depending on the pressure regime in which the plasma source can be operated at a particular voltage. For example, in one non-limiting example, a plasma source operating at a voltage between about 100 V and about 300 V and a pressure between about 5 Torr and about 50 Torr can include a third plate characterized by a thickness between about 3 mm and about 5 mm in some embodiments.

[0059] To facilitate operation as a plasma generating electrode, in some embodiments, a dielectric material can be formed over the electrode material. While the dielectric material can be formed completely over the electrode material across the plate of the plasma source, in some embodiments, the dielectric material can be formed over the electrode material extending along the sidewalls of each aperture in the plate, as shown. For example, a first dielectric material 525 can be formed over the electrode material formed along the sidewalls of each aperture through the first plate 505. Furthermore, a second dielectric material 530 can be formed over the electrode material formed along the sidewalls of each aperture through the second plate 510. The first dielectric material 525 and the second dielectric material 530 can be the same or different materials and can be any of the dielectric materials previously described. The dielectric material can also be formed to any thickness described elsewhere for the electrodes, apertures, or other thicknesses or dimensions mentioned. Although the figure shows the dielectric material contained within the apertures, to show the continuity of the electrode stripes, it should be understood that in some embodiments the dielectric material can extend around any exposed electrode material through the channels of the source or plasma cell, and thus in some embodiments no portion of the electrode material is exposed through the apertures 410 that extend through the source.

[0060] In some embodiments, the dielectric material may be the same material as the corresponding plate, while in some embodiments, the dielectric material may be different from the plate material. As a non-limiting example, the first plate 505 may be formed from a first dielectric material such as aluminum oxide, and the dielectric material 525 may be another dielectric material such as magnesium oxide, although any of the aforementioned materials may be utilized for any of the plate materials or dielectric materials. However, the material selected and the thickness at which the dielectric material is formed may affect the voltage at which breakdown occurs to generate a discharge within the plasma cell. By providing a first voltage across a first electrode and a second voltage across a second electrode that overlaps the first electrode in a particular channel or plasma cell formed through the source, a discharge may be formed within the plasma cell to provide plasma excitation of the precursors delivered through the apertures. The operation of the plasma cell is further described below.

[0061] 6 shows a schematic cross-sectional view of an exemplary plasma source 600 according to some embodiments of the present technology. The plasma source 310 described above illustrates a two-dimensional electrode configuration that is encompassed by some embodiments of the present technology. Additional plasma sources encompassed by the present technology may include one-dimensional electrode configurations, three-dimensional electrode configurations, or any number of configurations that include additional electrodes. For example, the plasma source 600 may illustrate a three-electrode plasma source that may include multiple sustain electrodes with address electrodes formed therebetween.

[0062] The plasma source 600 may include any of the features, characteristics, or components of any of the plasma sources previously described, including the plasma source 310. Similarly, the plasma source 600 may be included in any of the systems or processing chambers previously described, as well as any other processing chambers capable of performing plasma processing. The plasma source 600 may include an arrangement similar to the plasma source 310, with additional plates of the plasma source in some embodiments, with additional electrodes incorporated into the source. For example, the plasma source 600 may include a first plate 605, a second plate 610, and a third plate 615 coupled together. A fourth plate 620 may be positioned between the first plate 605 and the second plate 610, and a fifth plate 625 may be positioned between the second plate 610 and the third plate 615. A sixth plate 630 and a seventh plate 632, which may be additional coatings, may be included to surround the other plates, such as bonded to the ends opposite the first and third plates as shown, and may provide protection or enclosure for the plasma source.

[0063] The first electrode 606 or first electrode set may extend across the first plate in a first direction or a first arrangement and intersect one or more apertures through the plate. The second electrode 612 or second electrode set may extend across the second plate in a second direction or a second arrangement that may be perpendicular to the first direction and intersect one or more apertures through the plate. Furthermore, the third electrode 616 or third electrode set may extend across the third plate in a first direction or a third arrangement similar to the direction along the first plate and intersect one or more apertures through the plate. In this arrangement, each of the first and third electrodes formed in parallel may operate as a sustaining electrode, thereby providing additional electrical efficiency during operation of the plasma source.

[0064] 7 shows a schematic top view of an exemplary cell of a plasma source 700 according to some embodiments of the present technique, which can show the layered components of the electrodes through the apertures. The plasma source 700 can include any of the features, characteristics, or components of any of the plasma sources previously described, including the plasma source 310. Similarly, the plasma source 700 can be included in any of the systems or processing chambers previously described, as well as any other processing chamber capable of performing plasma processing.

[0065] As shown, the plasma source 700 can include a source substrate 705 through which an aperture 710 or plasma cell can be defined. The first electrode 715 can extend along a first surface, such as along a first plate of the plasma source 700, and can be included within the source as described above, such as formed between plates or surrounded by a dielectric material. The first electrode 715 can extend in a stripe along the source and can be one of many electrodes included throughout the source. The second electrode 720 can extend along a second surface of the source, including within the source as described above, or can be surrounded by a dielectric material. The electrodes can be formed in different planes, including along different portions of the aperture 710 formed through the source. As shown, the electrode 715, and similarly the electrode 720, can extend along the surface of the source as well as along the sidewalls of the aperture 710 formed through the substrate. The electrode may then include annular components that extend along the apertures to provide continuity along each aperture that it intersects.

[0066] As previously mentioned, the dielectric material 725 can be formed over the portion of the electrode formed along the sidewall of the aperture 710. The dielectric material can facilitate a dielectric barrier discharge between the first electrode 715 and the second electrode 720 in the aperture through the source. Although the electrode material is shown only along the interior sidewall covering the electrode material when disposed between the source substrate 705 and the dielectric material 725, it should be understood that in some embodiments the dielectric material can extend outside the aperture and cover the entire annular portion of the electrode to limit or prevent exposure of the electrode material within the aperture or plasma cell.

[0067] 8 shows a schematic cross-sectional view of an exemplary plasma source 800 in accordance with some embodiments of the present technique, which may illustrate the variation in aperture profile through the source. The plasma source 800 may include any of the features, characteristics, or components of any of the plasma sources previously described, including the plasma source 310. Similarly, the plasma source 800 may be included in any of the systems or processing chambers previously described, as well as any other processing chamber capable of performing plasma processing.

[0068] The plasma source 800 may include similar features as the plasma source 310 shown in FIG. 5 above, and may include some or all of the components including a first plate 805 that may define a first aperture 806, a second plate 810 that may define a second aperture 812, and a third plate 815 that may define a third aperture 816. A first set of electrodes 807 may extend across a surface of the first plate 805, and a second set of electrodes 813 may extend across a surface of the second plate 810. As previously mentioned, each first aperture may be coaxial with an associated second aperture and third aperture and may define a channel or plasma cell through the source 800. Any of the apertures in any of the plates may be characterized by any of the aperture diameters described above, and in some embodiments, at least one of the plates may define apertures of a different diameter than one or all of the other plates of the source.

[0069] For example, the source 800 shows two additional aperture profiles that can be included separately or in combination with any other aperture profile through the source encompassed in the embodiments of the present technology and can represent any plasma source aperture profile embodiment described throughout this disclosure. For example, both aperture profiles include a plasma cell in which the first aperture 806 is characterized by a first diameter and the third aperture 816 is characterized by a second diameter that is different from the first diameter. As shown in the first example encompassed in the figure, the third aperture 816a is characterized by a diameter that is smaller than the diameter of the first aperture 806. By effectively increasing the amount of material formed between the first electrode 807 and the second electrode 813, the source can be configured to operate at a lower pressure regime, which can reach about 5 Torr or less in some embodiments. Furthermore, increasing the gap distance can increase the voltage discharging in the plasma cell.

[0070] In the second example included in the figure, the third aperture 816b is characterized by a diameter larger than that of the first aperture 806. Furthermore, the electrode material 807 can extend across the first surface of the first plate 805 in the aforementioned stripes as shown. The electrode material 807 can also extend across a second surface of the first plate 805 opposite the first surface, such as in the gap between the first and second plates occupied by the third plate. Similarly, the electrode material 813 can be formed along the first surface of the second plate 810 and can be formed in an increased annular lip or extension around the aperture 812 as shown. The extensions of both the first electrode material 807 and the second electrode material 813 can occur to the same extent on the opposing surfaces. Furthermore, the dielectric material 820 formed through the first aperture 806 and the dielectric material 822 formed through the second aperture 812 can further extend around the additional electrode material as shown.

[0071] For example, the dielectric material can extend into the gap over the additional electrode material to limit or prevent exposure of either electrode, which may also occur on the first surface of the first plate to limit or prevent exposure of the electrode material in the plasma cell. By effectively reducing the amount of material and the gap formed between the first electrode 807 and the second electrode 813, the source may be configured to operate at a higher pressure regime, which may reach about 5 Torr or more in some embodiments, and may reach pressures of about 10 Torr or more, about 15 Torr or more, about 20 Torr or more, about 25 Torr or more, about 30 Torr or more, about 35 Torr or more, about 40 Torr or more, about 45 Torr or more, about 50 Torr or more, or higher. Furthermore, increasing the gap distance may reduce the voltage discharging in the plasma cell in some embodiments.

[0072] The aforementioned sources can be operated to generate plasma enhanced precursors for use in semiconductor processing. The plasma cells formed through the sources can allow for independently developed plasma profiles that can affect the substrate level performance of the process being generated. By utilizing addressing and sustaining plasma functions in each plasma cell, and adjusting the number of plasma pulses generated in each cell during the sustaining function, the amount of deposition material, etchant, or process material generated in each plasma cell through the source can be specifically tailored to improve process uniformity at the substrate level.

[0073] 9 illustrates selected operations in a method 900 for processing a semiconductor substrate according to some embodiments of the present technology. The method can be performed in a variety of processing chambers, including the processing system 300 described above, which may include a plasma source according to some embodiments of the present technology, such as any component, configuration, or characteristic of any of the plasma sources described above. The method 900 can include some optional operations that may or may not be specifically associated with some embodiments of the method according to the present technology. For ease of understanding, an exemplary etching process may be described in conjunction with the operations of the method 900, but this process is not intended to be limiting, and it should be understood that any number of etching, deposition, processing, or cleaning operations may be similarly performed according to the method 900 and variations similarly encompassed by the present technology.

[0074] The method 900 can be performed in a process chamber including a plasma source as described above. The plasma source can include one or more apertures through the source, as well as a first set of electrodes and a second set of electrodes. One or more power sources can be included and configured to provide a first voltage along each electrode of the first set of electrodes and a second voltage along each electrode of the second set of electrodes. In an exemplary embodiment, the source can be formed with electrodes and dielectric materials and thicknesses to generate a discharge at 250V in each plasma cell. It is understood that these materials and configurations can be tailored to generate a discharge within any voltage range as described above. Furthermore, the power sources can be configured to provide any voltage within the voltage ranges described above, but each power source can be specifically configured to provide a voltage lower than a voltage at which a discharge can occur in each cell at a specified operating condition. The power sources can also be configured in combination to provide a voltage that can be higher than a voltage at which a discharge can occur.

[0075] Continuing with the non-limiting example, the first power supply can be configured to provide a first voltage that can be about 250V or less, and a second voltage that can be 200V, although many other voltages within this range can be selected. The first electrode can be, for example, a sustain electrode. Furthermore, the second power supply can be configured to provide a second voltage that can be about 250V or less, and a second voltage that can be 80V, although many other voltages within this range can be selected. The second electrode can be, for example, an address electrode. Thus, if either power supply provides a voltage along a particular electrode, there may be no discharge effect within the individual plasma cells. However, if the overlapping electrodes are similarly subjected to a voltage, the plasma cell or channel where the electrodes overlap may receive a voltage higher than the voltage at which a discharge may occur between the two electrodes, and thus a discharge may occur within that cell without, for example, occurring in other cells along either electrode. By adjusting the supply of power along each of the first electrodes, plasma may be generated independently within each channel or plasma cell of the source.

[0076] A control scheme for generating plasma can be performed by using controls such as the system controller described above to address each plasma cell of the source, and then maintaining the cells under a pulsing scheme that can generate a desired process profile on the substrate. Addressing the cells can include providing a voltage along the corresponding electrode that provides a net voltage above the cell breakdown voltage. For example, in optional operation 905, a first voltage, such as 200V in this example, can be provided along each of the first electrodes, similar to the scanning function of a multiplexer. Furthermore, in optional operation 910, in the same example, a second voltage, such as 80V, can be provided along selected second electrodes, including all electrodes, such that the breakdown voltage is exceeded in each cell where the electrodes receiving the voltage overlap. This can be performed with a precursor for a subsequent processing operation, an inert precursor, or a carrier precursor, or can be performed within the environment of the processing chamber. Thus, there can be at least some overlap between the voltage provided along the first electrode and the voltage provided along the second electrode to generate a discharge in one or more plasma cells, including all plasma cells, of the source.

[0077] When a discharge occurs within a particular plasma cell during an addressing operation, a surface charge remains on the dielectric layers of the two electrodes. This surface charge may be less than the cell breakdown voltage, but may be greater than the difference between the cell breakdown voltage and the voltage provided along the sustain electrodes. Precursors for semiconductor processing may be provided in operation 915 and may be provided into a semiconductor processing chamber incorporating a plasma source, such as any of the plasma sources described throughout this disclosure. The precursors may flow through the chamber and be distributed through channels or plasma cells of the plasma source, which may also be gas distribution plates, before being provided to the processing region to interact with the substrate. As the precursors are being provided through the plasma cells of the source, a first power supply may provide a first voltage, such as 200V, along the first or sustain electrodes, in operation 920, continuing the example. Thereafter, a voltage resulting from the memory charge of the dielectric surface within the plasma cells of the previously addressed source may be added to the applied voltage of the sustain electrodes (which may again exceed the cell breakdown voltage), generating an additional discharge pulse of plasma only in the previously addressed cells. This allows a plasma to be formed in individual channels or plasma cells via the plasma source in operation 925, which can generate plasma enhanced precursors as they flow through the source. The precursors, which can include one or more precursors, can then interact with the substrate to perform substrate processing.

[0078] If all plasma cells feature similar dimensions and the voltages applied to each electrode are the same, the plasma power generated in each cell can be proportional to the number of discharge pulses that occur in each cell during an operating cycle. In each cycle, individual plasma cells can be reset and then readdressed, which can adjust which cells receive memory charges. If a cell does not receive a memory charge in an addressing cycle, it will not discharge during the subsequent sustain cycle. Since cycles can occur in milliseconds or microseconds, the number of pulses that can occur in each cell during a processing operation lasting several seconds or minutes can be hundreds, thousands, tens of thousands, or hundreds of thousands of plasma pulses. Thus, by adjusting the number of pulses a particular cell receives, the process being performed on the substrate can be adjusted in a feed-forward loop.

[0079] For example, a process such as an etching process can be performed on a substrate housed in a chamber incorporating a plasma source as described above. It is understood that exemplary deposition, processing, cleaning, or other operations can be performed in a similar manner. The etching process can be performed over a period of time during which the plasma cells can be operated such that each plasma cell discharges a certain number of times during the period. As a non-limiting example, each plasma cell can be operated to discharge 10,000 times during the period, although any number of pulses can be configured based at least in part on the frequency of the power supply. Theoretically, the etching process performed should occur uniformly across the substrate, but this does not always occur. For example, due to non-uniformity in the flow of precursors in the processing chamber, non-uniformity in the temperature distribution across the substrate, or many other factors, the etching process can generate a profile across the substrate.

[0080] Subsequent runs of the etch process, metrology, or other analysis can be performed to identify process non-uniformities, such as edge-high profiles, center-high profiles, radial or planar non-uniformities, or a combination of these issues. For example, the analysis can determine that etching occurs more easily in the center of the substrate than at the edges, producing an edge-high profile. The process can be adjusted accordingly to reduce center etching, increase edge etching, or both. By adjusting the number of discharge pulses per plasma cell of the plasma source, increased or decreased etchant precursors can be generated through different regions of the plasma source, thereby providing the desired change.

[0081] To produce these effects in the source, the addressing scheme of the plasma cells can be modified. For example, all plasma cells in the source may continue to operate throughout the entire processing time, but the number of discharge pulses generated in each cell can be adjusted through the addressing scheme. To generate the addressing scheme, for example, a number of subfields can be generated as a set of frames throughout the processing time. A digital controller or an embodiment of a system controller can generate the addressing and sustaining schemes for each subfield and frame throughout the processing period. At the beginning of each subfield period, each plasma cell can be addressed as described above to either maintain or lose its memory charge. During the subsequent sustain pulse, in each subfield period, only the cells that maintain their memory charge are further discharged, thereby adjusting the plasma intensity in each plasma cell during each frame of the processing time.

[0082] Continuing with the etching example above, the plasma intensity can be relatively increased at the radial edges of the processing region and relatively decreased at the central region of the processing region by increasing the number of discharge pulses in the plasma cells around the periphery of the plasma source and / or decreasing the number of discharge pulses in the plasma cells around the central region of the plasma source. This can increase etching in the edge regions and decrease etching in the central region. With respect to pulses, each cell throughout the source can continue to receive about 50% or more of the total number of pulses that can be generated during an operating period, and can continue to receive about 60% or more of the total number of pulses, about 70% or more of the total number of pulses, about 80% or more of the total number of pulses, about 90% or more of the total number of pulses, about 95% or more of the total number of pulses, about 99% or more of the total number of pulses, or more, depending on the variance required by the process being performed.

[0083] For example, a plasma cell in the middle region of the source may receive 9,000 discharge pulses over the entire process time, while a plasma cell in the central region of the source may receive 8,000 discharge pulses over the process time, and a plasma cell in the radial edge region of the source may receive 10,000 discharge pulses over the process time. Of course, any number of variations across sources and individual plasma cells are encompassed as well, since each individual cell can be independently tuned across sources to provide complex plasma profiles that can accommodate process non-uniformities from any number of sources.

[0084] For example, processing of image data and subsequent adjustments to the addressing scheme to overcome or adjust for process non-uniformities can be used to generate or initiate a library of results or outcomes that can facilitate future processes. This generated library can be accessed by a processor for machine learning, where algorithms are implemented to identify patterns from processing scenarios to provide machine learning models that facilitate predictive adjustments of process or chamber conditions. The algorithms can include considerations of chamber conditions, process conditions, materials or properties of components of the system, addressing schemes, and the impact on processing of each adjustment of discharge pulses, among many other considerations that can be collected during processing and analyzed to train the machine learning model. Deep machine learning algorithms can be developed for pulsing schemes or addressing operations based on the number of plasma cells in a particular source.

[0085] Machine learning can further add to the data library and iteratively improve predictions for any number of chambers or processing scenarios. As a result, over time, the model can predict effects based on previously received or modeled processing image data and control the process by adjusting the total number of discharge pulses of individual plasma cells, and can adjust any number of process parameters in situ to increase or decrease the discharge pulses of each plasma cell across the plasma source to improve process results and operational uniformity. By utilizing individually addressable plasma cells in plasma sources according to some embodiments of the present technique, improved plasma processing can be performed at higher pressures and lower voltages than many conventional processing chambers.

[0086] One or more computing devices or components can be adapted to provide some of the desired functionality described throughout by accessing software instructions rendered in computer-readable form. The computing device can process or access signals for operation of one or more components of the technology, such as, for example, addressing individual cells throughout the plasma source during each subfield of each frame of processing time. When software is used, any suitable programming, scripting, or other type or combination of languages ​​can be used to perform the described processes. However, software need not be used exclusively or at all. For example, some embodiments of the technology described above can be implemented in hardwired logic circuitry or other circuitry, including but not limited to application specific circuitry. Combinations of computer-executed software and hardwired logic circuitry or other circuitry may be suitable as well.

[0087] Some embodiments of the present technology may be performed by one or more suitable computing devices adapted to perform one or more of the operations described above. As noted above, such devices may have access to one or more computer-readable media embodying computer-readable instructions that, when executed by at least one processor that may be incorporated in the device, cause the at least one processor to implement one or more aspects of the present technology. Additionally or alternatively, the computing device may include circuitry that causes the device to operate to implement one or more of the methods or operations described.

[0088] Any suitable computer-readable medium or media may be used to implement or perform one or more aspects of the present technology, including, but not limited to, diskettes, drives, and other magnetic-based storage media, optical storage media including disks such as CD-ROMs, DVD-ROMs, or variations thereof, flash, RAM, ROM, and other memory devices.

[0089] In the foregoing description, for purposes of explanation, numerous details have been set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details or with additional details.

[0090] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative configurations, and equivalents can be used without departing from the spirit of the embodiments. Moreover, some well-known processes and elements have not been described in order to avoid unnecessarily obscuring the present technology. Therefore, the above description should not be construed as limiting the scope of the present technology.

[0091] Where a range of values ​​is presented, it is understood that each intervening value, to the smallest fraction of the unit of the lower limit, between the upper and lower limits of that range is also specifically disclosed, unless the context clearly dictates otherwise. Any narrower range between any stated value or unstated intervening value in a stated range and any other stated or intervening value within that stated range is also encompassed. The upper and lower limits of these smaller ranges may be independently included or excluded from the range, and each range in which either, neither or both limits are included in the smaller range is also encompassed within the scope of this technology, subject to any specifically excluded limits in the stated range. When one or both limits are included in a stated range, ranges excluding either or both of those included limits are also included.

[0092] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly indicates otherwise. Thus, for example, a reference to "an electrode" includes a plurality of such electrodes, a reference to "a plasma cell" includes a reference to one or more plasma cells and equivalents thereof known to those skilled in the art, and so forth.

[0093] Additionally, the words "comprise(s)," "comprising," "contain(s)," "containing," "include(s)," and "including," when used in this specification and the appended claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, acts, or groups.

Claims

1. In the plasma source, a first plate defining a first plurality of apertures arranged in a first row set, the first plate including a first set of electrodes, each electrode of the first set of electrodes extending along a separate row of the first row set; a second plate defining a second plurality of apertures arranged in a second row set, the second plate including a second electrode set, each electrode of the second electrode set extending along a separate row of the second row set, each aperture of the second plurality of apertures being axially aligned with one aperture of the first plurality of apertures; and a third plate positioned between the first plate and the second plate, the third plate defining a third plurality of apertures, each aperture of the third plurality of apertures being axially aligned with one aperture of the first plurality of apertures and one aperture of the second plurality of apertures; Including, each electrode of the second electrode set extends along a first surface of the second plate, the first surface of the second plate being adjacent to the third plate; a first surface of the first plate, each electrode of the first electrode set extending along the first surface of the first plate, and each electrode of the first electrode set further extending completely between the first surface of the first plate and a second surface of the first plate opposite the first surface of the first plate, along a sidewall of each aperture of the first plurality of apertures that intersects an associated electrode.

2. 2. The plasma source of claim 1 , wherein each axially aligned aperture of the first plurality of apertures, aperture of the second plurality of apertures, and aperture of the third plurality of apertures form a plasma cell extending through the plasma source.

3. a first power source electrically coupled to each electrode of the first electrode set, the first power source configured to supply a first voltage along each electrode of the first electrode set; The plasma source of claim 1 further comprising:

4. a second power source electrically coupled to each electrode of the second electrode set and configured to supply a second voltage along each electrode of the second electrode set; The plasma source of claim 3 further comprising:

5. 5. The plasma source of claim 4, wherein the first power supply and the second power supply are configured to generate a discharge in a plasma cell located between overlapping electrodes of the first electrode set and one electrode of the second electrode set from which the first power supply and the second power supply each receive power.

6. 2. The plasma source of claim 1 , wherein each aperture of the first plurality of apertures is characterized by a first diameter and each aperture of the third plurality of apertures is characterized by a second diameter different from the first diameter.

7. 2. The plasma source of claim 1 wherein each electrode of the first electrode set is maintained electrically insulated from each other electrode of the first electrode set along a surface of the first plate.

8. a layer of dielectric material covering the electrode material extending along a sidewall of each of the first plurality of apertures; The plasma source of claim 1 further comprising:

9. 1. A semiconductor processing chamber comprising: a substrate support configured to support a substrate for processing and at least partially defining a processing region from below; and a plasma source positioned within the semiconductor processing chamber, a first plate defining a first aperture; a first electrode extending across a first surface of the first plate and intersecting the first aperture; a second plate defining a second aperture, the second aperture being coaxial with the first aperture; a second electrode extending across a surface of the second plate and intersecting the second aperture, the second electrode extending perpendicular to the first electrode; and a third plate positioned between the first plate and the second plate, the third plate defining a third aperture coaxial with the first aperture and the second aperture to form a channel through the plasma source; A plasma source comprising: Including, the surface of the second plate is adjacent to the third plate; the first electrode extends completely around a sidewall of the first aperture between a first surface of the first plate and a second surface of the first plate opposite the first surface of the first plate.

10. The semiconductor processing chamber of claim 9, wherein the second electrode extends around a sidewall of the second opening.

11. a first power supply configured to provide a first voltage along the first electrode; and a second power source configured to provide a second voltage along the second electrode; The semiconductor processing chamber of claim 10 further comprising:

12. a first dielectric material covering a portion of the first electrode that extends around the sidewall of the first aperture; and a second dielectric material covering a portion of the second electrode that extends around the sidewall of the second aperture; The semiconductor processing chamber of claim 10 further comprising:

13. 10. The semiconductor processing chamber of claim 9, wherein the first aperture is characterized by a first diameter and the third aperture is characterized by a second diameter different than the first diameter.

14. The semiconductor processing chamber of claim 9 , wherein the plasma source at least partially defines the processing region from above.

15. 10. The semiconductor processing chamber of claim 9, wherein the first aperture is an aperture of a first plurality of apertures, the first electrode is an electrode of a first plurality of electrodes, and each aperture of the first plurality of apertures intersects with an electrode of the first plurality of electrodes.

16. 1. A method of semiconductor processing comprising:

1. Delivering a precursor to a semiconductor processing chamber having a plasma source, the plasma source comprising: a first plate defining a first aperture; a first electrode extending across a first surface of the first plate and intersecting the first aperture; a second plate defining a second aperture, the second aperture being coaxial with the first aperture; a second electrode extending across a surface of the second plate and intersecting the second aperture, the second electrode extending perpendicular to the first electrode; a third plate positioned between the first plate and the second plate, the third plate defining a third aperture coaxial with the first aperture and the second aperture to form a channel through the plasma source, the surface of the second plate being adjacent to the third plate; a first power supply configured to provide a first voltage along the first electrode; and a second power source configured to provide a second voltage along the second electrode; providing a precursor comprising: providing the first voltage along the first electrode; and forming a plasma of the precursor within the channel through the plasma source; Including, the first electrode extends completely around a sidewall of the first aperture between the first surface of the first plate and a second surface of the first plate opposite the first surface of the first plate.

17. Prior to providing the precursor, providing the first voltage along the first electrode; and providing the second voltage along the second electrode to generate a memory charge in the channel through the plasma source; 20. The method of semiconductor processing of claim 16, further comprising:

18. The method of claim 17, wherein the second electrode extends around a sidewall of the second aperture, and the plasma source further comprises: a first dielectric material covering a portion of the first electrode that extends around the sidewall of the first aperture; and a second dielectric material covering a portion of the second electrode that extends around the sidewall of the second aperture; 20. The method of semiconductor processing of claim 16, comprising:

19. 20. The method of semiconductor processing of claim 16, wherein a breakdown voltage in said channel formed through said plasma source is about 500V or less.

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