Method for assembling a substrate support device

Abstract

To provide a method of assembling a substrate supporting apparatus that prevents oxidation of a rod and thus does not result in a change in process conditions.SOLUTION: A method of assembling a substrate supporting apparatus 130 includes: coupling a conductive rod 160 to an electrode 133 installed in a substrate support 132 to support a substrate; forming a sacrificial layer on the rod; bonding the rod and the electrode together by melting a filler and infiltrating it into a coupling area between the rod and the electrode, while forming a protective layer 164 from the filler between the rod and the sacrificial layer by also infiltrating the filler into a gap between the rod and the sacrificial layer; and coupling a shaft 135 to the substrate support, the rod extending through the shaft.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to semiconductor manufacturing equipment, and more particularly to a method for assembling a substrate support apparatus. [Background technology]

[0002] In order to manufacture semiconductor devices, various substrate processing processes are performed in a substrate processing apparatus under a vacuum atmosphere. For example, a substrate may be loaded into a process chamber, and a process such as depositing a thin film on the substrate or etching the thin film may be performed. Here, the substrate is supported by a substrate support device installed in the process chamber, and electrodes for inducing an RF current on the substrate or providing an electrostatic force to the substrate may be installed therein.

[0003] A rod for transmitting electric power can be assembled to such an electrode. When the rod is joined to the electrode, a process of filling a filler at a high temperature and joining the electrode can be added to reduce contact resistance. Recently, research is being conducted on changing the material of the rod to suppress heat generation due to induction heating of the rod.

[0004] However, there is a problem that the resistance value or impedance changes due to oxidation of the rod during use. In order to prevent oxidation of the rod, a surface coating can be applied, but the coating can partially melt or crack during the high-temperature bonding process described above, and oxidation cannot be prevented, which causes a problem that the process conditions need to be changed. Summary of the Invention [Problem to be solved by the invention]

[0005] The present invention is intended to solve various problems including the above problems, and one object of the present invention is to provide a method for assembling a substrate support device that prevents oxidation of the rods and does not cause changes in process conditions. However, this object is merely an example, and the scope of the present invention is not limited thereto. [Means for solving the problem]

[0006] A method for assembling a substrate support device according to one aspect of the present invention for solving the above problem includes the steps of: bonding a conductive rod to an electrode installed in a substrate support table for supporting a substrate; forming a sacrificial layer on the rod; melting and penetrating a filler material into the bonding site between the rod and the electrode, thereby bonding the rod and the electrode, while also penetrating the filler material between the rod and the sacrificial layer, thereby forming a protective layer between the rod and the sacrificial layer with the filler material; and bonding a shaft through which the rod passes to the substrate support table.

[0007] The method for assembling the substrate support apparatus can include a step of removing the sacrificial layer after the step of forming the protective layer.

[0008] In accordance with the method for assembling the substrate support apparatus, the sacrificial layer may include a ceramic material.

[0009] According to the method for assembling the substrate support apparatus, the sacrificial layer can include an Al2O3 layer.

[0010] According to the method for assembling the substrate support apparatus, the filler may include a noble metal that does not react with oxygen so that the protective layer has oxidation resistance.

[0011] According to the method for assembling a substrate support apparatus, the filler may include Au or an Au alloy.

[0012] According to the method for assembling the substrate support apparatus, the rod may include molybdenum (Mo) material, which is a paramagnetic material, so as to suppress the generation of induction heating.

[0013] According to the method for assembling the substrate support device, the step of melting and penetrating the filler in the step of forming the protective layer uses a brazing process, and the temperature of the brazing process can be higher than the melting temperature of the filler.

[0014] According to the method for assembling the substrate support apparatus, the electrode may include an RF electrode or an electrostatic electrode. Effect of the Invention

[0015] According to the method for assembling a substrate support device according to some embodiments of the present invention, the protective layer is uniformly formed on the rod, which prevents the rod from being oxidized, and does not cause a change in the process conditions, thereby improving the reliability of the process. Of course, the scope of the present invention is not limited to such effects. [Brief description of the drawings]

[0016] [Figure 1] 5A to 5C are schematic cross-sectional views showing a method for assembling a substrate support apparatus according to an embodiment of the present invention. [Diagram 2] 5A to 5C are schematic cross-sectional views showing a method for assembling a substrate support apparatus according to an embodiment of the present invention. [Diagram 3] 5A to 5C are schematic cross-sectional views showing a method for assembling a substrate support apparatus according to an embodiment of the present invention. [Figure 4] 5A to 5C are schematic cross-sectional views showing a method for assembling a substrate support apparatus according to an embodiment of the present invention. [Diagram 5] 5A to 5C are schematic cross-sectional views showing a method for assembling a substrate support apparatus according to an embodiment of the present invention. [Figure 6] 5A to 5C are schematic cross-sectional views showing a method for assembling a substrate support apparatus according to an embodiment of the present invention. [Figure 7] FIG. 11 is a schematic cross-sectional view showing a substrate processing apparatus according to another embodiment of the present invention. [Figure 8] 1 is a photograph showing that the protective layer melts during the brazing process in a comparative example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] Various preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0018] The embodiments of the present invention are provided to more completely explain the present invention to those having ordinary skill in the art, and the following embodiments may be modified into various other forms, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to make the present disclosure more complete and complete, and to fully convey the idea of ​​the present invention to those skilled in the art. In addition, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation.

[0019] 1 to 6 are schematic cross-sectional views showing an assembly method of a substrate support apparatus 130 according to an embodiment of the present invention. 2 to 5 may be enlarged views of a portion of the substrate support apparatus 130.

[0020] 1, a substrate support 132 for supporting a substrate S may be provided. For example, a mounting groove 134 may be formed on the upper surface of the substrate support 132, and the substrate S may be mounted on the mounting groove 134. The substrate support 132 may be formed in various shapes depending on the shape of the substrate S. For example, when the substrate S is in the form of a wafer, the substrate support 132 may be formed in the shape of a disk.

[0021] At least one conductive electrode 133 may be provided in the substrate support 132. For example, the electrode 133 may include an electrostatic electrode for applying an electrostatic force to the substrate S, or an RF electrode that functions to allow an RF current to flow through the substrate support 132. In addition, a hot wire heater (not shown) for heating the substrate S may be further formed in the substrate support 132.

[0022] In some embodiments, the substrate support pedestal 132 may comprise a ceramic material, such as an AlN material.

[0023] 2, the rod 160 may be coupled to the electrode 133 installed in the substrate support 132. For example, a screw groove may be formed at a coupling portion of the electrode 133 and a thread may be formed at a coupling portion of the rod 160, so that the electrode 133 and the rod 160 are fastened to each other in a screw-engagement manner. As another example, a groove may be formed at a coupling portion of the electrode 133, and the rod 160 may be press-fitted into the groove to be coupled to the electrode 133.

[0024] 3, a sacrificial layer 162 may be formed on the rod 160. The sacrificial layer 162 is formed so as to entirely surround the rod 160, but there may be a minute gap between the rod 160 and the sacrificial layer 162. Therefore, the sacrificial layer 162 may be formed using a material and / or method that does not completely adhere to the rod 160 and forms a certain amount of gap.

[0025] For example, the sacrificial layer 162 may include a ceramic material, for example, an Al2O3 layer. The ceramic sacrificial layer 162 can prevent oxidation of the rod 160 and can be easily formed on the rod 160 by a coating method. For example, the sacrificial layer 162 may be formed by various methods such as thermal spray coating, evaporation deposition, etc. However, when the rod 160 is made of molybdenum (Mo), since there is a large difference in thermal expansion coefficient between the rod 160 made of molybdenum material and the sacrificial layer 162 made of ceramic material 162, it is difficult for the sacrificial layer 162 to remain on the rod 160 and it must be removed after a certain time.

[0026] 4, a filler 50 can be melted and infiltrated into the bonding site between the rod 160 and the electrode 133 to bond the rod 160 and the electrode 133. This bonding process not only increases the mechanical bonding force between the rod 160 and the electrode 133, but also increases the bonding area between the rod 160 and the electrode 133, thereby lowering the electrical contact resistance between the rod 160 and the electrode 133.

[0027] The molten filler 50 can penetrate into the joint between the rod 160 and the electrode 133 by capillary action and solidify to bond them together. Therefore, the filler 50 needs to have enough fluidity to cause capillary action in the molten state, and may be required to have high electrical conductivity.

[0028] Furthermore, the filler material 50 can be permeated between the rod 160 and the sacrificial layer 162 to form a protective layer 164 with the filler material 50 between the rod 160 and the sacrificial layer 162. Thus, the protective layer 164 can be formed by solidifying the molten filler material 50 that permeates between the rod 160 and the sacrificial layer 162 by capillary action.

[0029] The protective layer 164 is for protecting the rod 160, and may be required to have, for example, oxidation resistance to prevent oxidation of the rod 160. Accordingly, the filler 50, which is the material of the protective layer 164, may be required to have chemical resistance that does not react with oxygen or nitrogen. For example, the filler 50 may include a noble metal that does not react with oxygen so that the protective layer 164 has oxidation resistance.

[0030] In some embodiments, the filler 50 may include Au or an Au alloy, and the protective layer 164 may be composed of an Au or Au alloy layer. For example, the Au alloy used as the filler 50 may include 70% or more of Au and Ni components in terms of wettability. In consideration of electrical conductivity, wettability, oxidation resistance, and the like, high purity Au may be selected as the filler 50, and in consideration of economy, an Au alloy may be considered.

[0031] In some embodiments, the process of melting the filler material 50 to infiltrate between the rod 160 and the electrode 133 or between the rod 160 and the sacrificial layer 162 can be a brazing process. The temperature of the brazing process can be higher than the melting temperature of the filler material in order to melt the filler material. For example, the melting temperature of the filler material 50 is 1000° C. or higher, and thus the temperature of the brazing process can be 1000° C. or higher, for example, about 1200° C. Meanwhile, in the brazing process, the filler material 50 can also be called a filler or a filler metal.

[0032] In some embodiments, the rod 160 may include a molybdenum (Mo) material, which is a paramagnetic material, to suppress the occurrence of induction heating. For example, if the rod 160 is made of a nickel (Ni) material, which is a ferromagnetic material, the rod 160 may be induction heated in an atmosphere using RF power. However, molybdenum (Mo) may oxidize at temperatures of 300°C or higher, and may form MoO3 oxide, which has a very high resistivity, especially at temperatures of 600°C or higher.

[0033] Such oxidation of molybdenum (Mo) may result in a change in resistance and / or impedance of rod 160. Protective layer 164 may function as an oxidation resistant coating for rod 160 that includes such molybdenum (Mo).

[0034] As described above, the filler material 50 can be used as a bonding material between the rod 160 and the electrode 133, and at the same time, can be used as a protective layer 164 between the rod 160 and the sacrificial layer 162. The filler material 50 can be uniformly infiltrated between the rod 160 and the sacrificial layer 162 by capillary action, so that the protective layer 164 can be uniformly formed on the rod 160.

[0035] If the sacrificial layer 162 is not present on the rod 160, the protective layer 164 is unlikely to be formed uniformly on the rod 160 during the brazing process. Also, as shown in Fig. 8, in the comparative example, if the protective layer 164 is first formed on the rod 160 by another method without the sacrificial layer 162 and then the brazing process is performed, the protective layer 164 may melt during the brazing process, resulting in non-uniformity.

[0036] 5, the sacrificial layer 162 may be removed, leaving behind the protective layer 164 on the rod 160. For example, the sacrificial layer 162 may be removed in a variety of ways, such as by wet etching.

[0037] 6, the shaft 135 can be coupled to the substrate support 132. For example, the shaft 135 can be coupled to the lower surface of the substrate support 132, and the rod 160 can be disposed to pass through the inside of the shaft 135. For example, a hole can be formed inside the shaft 135, and the rod 160 can be disposed within the hole of the shaft 135.

[0038] The substrate support device 130 may be manufactured or assembled in accordance with the above. For example, the substrate support device 130 may include a substrate support table 132 for supporting the substrate S, and a shaft 135 coupled to the substrate support table 132. An electrode 133 may be disposed within the substrate support table 132, and a rod 160 for supplying power may pass through the shaft 135 and be coupled to the electrode 133. A power supply device or the like may be connected to the rod 160.

[0039] FIG. 7 is a schematic cross-sectional view showing a substrate processing apparatus 100 according to another embodiment of the present invention.

[0040] Referring to FIG. 7, a substrate processing apparatus 100 may include a process chamber 110, a gas injector 120, and a substrate support device .

[0041] A reaction space 112 for processing the substrate S may be formed inside the process chamber 110. For example, the process chamber 110 may be configured to maintain airtightness and may be connected to a vacuum pump (not shown) via an exhaust port 114 to exhaust process gases in the reaction space 112 and adjust the degree of vacuum in the reaction space 112.

[0042] The gas injection unit 120 may be installed in the process chamber 110 to supply a process gas supplied from outside the process chamber 110 to the reaction space 112. The gas injection unit 120 may be installed in an upper portion of the process chamber 110 facing the substrate support 132 to inject the process gas onto the substrate S placed on the substrate support 132. The gas injection unit 120 may receive the process gas from outside through a gas inlet 122 connected to a gas inlet line 126, and may include a plurality of injection holes formed below facing the substrate S to inject the process gas onto the substrate S.

[0043] For example, the gas injector 120 may have various shapes such as a shower head shape, a nozzle shape, etc. When the gas injector 120 is in the form of a shower head, the gas injector 120 may be coupled to the process chamber 110 in a shape partially covering an upper portion of the process chamber 110 and may inject a process gas into the reaction space 112 through an injection plate 124. For example, the gas injector 120 may be coupled to a cover or a sidewall of the process chamber 110 in the form of a lid.

[0044] A substrate support apparatus 130 may be provided to support the substrate S. For the substrate support apparatus 130, reference may be made to the description of FIG.

[0045] The plasma power supply unit 140 may be connected to the gas injection unit 120 to supply power for forming a plasma atmosphere inside the process chamber 110. For example, the plasma power supply unit 140 may include at least one RF (radio frequency) power source to apply at least one RF power to the process chamber 110. For example, the plasma power supply unit 140 may be connected to apply RF power to the gas injection unit 120. In this case, the gas injection unit 120 may also be referred to as a power supply electrode or an upper electrode.

[0046] Additionally, an impedance matching unit 146 may be disposed between the plasma power supply unit 140 and the gas injection unit 120 for impedance matching. Only when proper impedance matching is performed between the plasma power supply unit 140 and the process chamber 110 via the impedance matching unit 146, can the RF power supplied from the plasma power supply unit 140 be effectively transferred to the process chamber 110 without being reflected back from the process chamber 110.

[0047] The substrate support table 132 of the substrate support device 130 may include an electrode 133 therein. The electrode 133 may be connected to an electrostatic power supply unit 150 to apply an electrostatic force to the substrate S, and / or may be connected to a plasma current control circuit unit 170 to allow an RF current to flow on the substrate S.

[0048] For example, the electrostatic power supply unit 150 may include a DC power supply 152 to supply DC power to the electrode 133. For example, the DC power supply 152 may be installed such that one end of the DC power supply 152 is connected to a ground and the other end is electrically connected to the electrode 133.

[0049] Additionally, electrostatic power supply 150 may include a DC filter 155 disposed between electrode 133 and DC power supply 152 to block RF current through electrode 133 from being drawn into DC power supply 152. DC filter 155 may be configured in a variety of forms to block RF current while allowing DC current to pass.

[0050] The plasma current control circuitry 170 may be connected to the substrate support 132 to control the plasma current flowing on the substrate S. For example, the plasma current control circuitry 170 may be connected to the electrode 133 in the substrate support 132 to control the plasma atmosphere between the gas injection unit 120 and the substrate support 132.

[0051] Such a plasma current control circuit unit 170 is intended to control the ratio of the RF current on the sidewall of the process chamber 110 to the RF current on the substrate support 132 or the substrate S, assuming that impedance matching is performed between the plasma power supply unit 140 and the process chamber 110, thereby controlling the plasma characteristics on the substrate S, and can be distinguished from the impedance matching unit 146 for impedance matching between the plasma power supply unit 140 and the process chamber 110.

[0052] The plasma current control circuit 170 may include an element 172 for controlling the current therein, and for example, the element 172 may include at least one RF filter for passing the RF current and at least one DC blocking element for blocking the DC current. The DC blocking element may be provided separately from the RF filter, or may include a part of the element in the RF filter.

[0053] FIG. 7 shows a structure in which the electrostatic power supply unit 150 and the plasma current control circuit unit 170 are commonly connected to the electrode 133, but in some embodiments, the electrode 133 may be connected only to the electrostatic power supply unit 150 or only to the plasma current control circuit unit 170.

[0054] The substrate processing apparatus 100 may be used as a plasma enhanced chemical vapor deposition (PECVD) apparatus or an atomic layer deposition (ALD) apparatus.

[0055] According to the above-described substrate processing apparatus 100, the oxidation of the rods 160 in the substrate support device 130 is prevented by the protective layer 164, and the change in resistance and impedance of the substrate support device 130 is prevented, thereby improving the reliability of the process.

[0056] The present invention has been described with reference to the embodiments shown in the drawings, but these are merely illustrative, and those skilled in the art will appreciate that various modifications and equivalent embodiments are possible. Therefore, the true technical scope of protection of the present invention should be determined by the technical ideas of the appended claims. [Explanation of symbols]

[0057] 100 Substrate processing apparatus 110 Process chamber 120 Gas injection section 130 Substrate support device 132 Substrate support stand 133 Electrode 135 Shaft

Claims

1. coupling the conductive rod to an electrode disposed within a substrate support for supporting a substrate; forming a sacrificial layer on the rod; a step of melting and penetrating a filler into a bonding portion between the rod and the electrode, and while bonding the rod and the electrode, penetrating the filler between the rod and the sacrificial layer, and forming a protective layer between the rod and the sacrificial layer with the filler; and coupling a shaft through which the rod extends to the substrate support. A method for assembling a substrate support apparatus.

2. The method for assembling a substrate support apparatus according to claim 1 , further comprising the step of removing the sacrificial layer after the step of forming the protective layer.

3. The method of claim 1 , wherein the sacrificial layer comprises a ceramic material.

4. The sacrificial layer is Al ２ O ３ The method of claim 3 further comprising forming a layer.

5. 2. The method of claim 1, wherein the filler material comprises a noble metal that does not react with oxygen, so that the protective layer has oxidation resistance.

6. The method of assembling a substrate support apparatus according to claim 5 , wherein the filler material comprises Au or an Au alloy.

7. 2. The method for assembling a substrate support apparatus according to claim 1, wherein the rod includes a molybdenum (Mo) material which is a paramagnetic material so as to suppress the generation of induction heating.

8. The step of melting and infiltrating the filler in the step of forming the protective layer uses a brazing process, The method for assembling a substrate support apparatus according to claim 1 , wherein a temperature in the brazing step is higher than a melting temperature of the filler material.

9. The method for assembling a substrate support apparatus according to claim 1 , wherein the electrode comprises an RF electrode or an electrostatic electrode.

Images