Isolation of radio frequency (RF) signals from the input signal conductor of the process chamber

Abstract

An apparatus for isolating an RF signal from an input signal conductor of a process chamber includes at least one first switch for isolating an energy storage element from an active element within the process station. In certain embodiments, while the first switch is in an open position, a second switch located between the current generator and the energy storage element is closed, thereby allowing the current generator to charge the energy storage element. In response to the energy storage element reaching a predetermined voltage, the first switch may be closed and the second switch may be opened, thereby allowing current to discharge from the energy storage element to the active element. In certain embodiments, the first and second switches are not permitted to operate in the closed position simultaneously, thereby preventing RF from being coupled from the process station to the current generator.

Description

[Background technology]

[0001] [CROSS REFERENCE TO RELATED APPLICATIONS] A PCT application has been filed contemporaneously herewith as a part of this application. Each application to which this application claims benefit or priority as identified in the contemporaneously filed PCT application is hereby incorporated by reference in its entirety for all purposes.

[0002] During a wafer fabrication process, such as etching a film deposited on a substrate utilizing a multi-station integrated circuit fabrication chamber, one or more radio frequency (RF) signals may be coupled to a process station of the chamber. Coupling an RF signal of sufficient energy to the process station may result in or promote the formation of an ionized plasma material. The ionized plasma material may act to remove or etch material from selected locations of the semiconductor wafer. However, in certain circumstances, the high energy radio frequency signal may intrude and / or interfere with other subsystems and / or components of the fabrication chamber. In some instances, such intrusion and / or interference of RF energy may degrade the operation of the fabrication chamber or the tools utilized in connection with the fabrication chamber. In other instances, the intrusion of RF energy may represent a parasitic loss of RF energy. In such instances, the parasitic loss of RF energy may represent only a small percentage of the total energy generated by the RF signal generator, but such parasitic loss represents a non-productive consumption of RF energy. As such, approaches toward reducing parasitic losses of RF energy remain an active area of ​​research.

[0003] The background discussion provided herein is intended to provide a general context for the present disclosure. Work by the currently named inventors within the scope of what is described in this background section, as well as aspects of the description that may not otherwise be regarded as prior art at the time of filing, are not admitted, either expressly or impliedly, as prior art against the present disclosure. Summary of the Invention

[0004] A general aspect of the present claim includes an apparatus for coupling a signal to a process chamber, the apparatus including one or more first switches positioned between at least one energy storage device and at least one active element of the process chamber and operative or configured to control a first current conducted between the at least one energy storage device and the at least one active element of the process chamber, the apparatus further including one or more second switches positioned between the at least one energy storage device and one or more current generators and controlling current conduction between the one or more current generators and the at least one energy storage device.

[0005] The above apparatus may further include one or more radio frequency (RF) filters, each of which may be arranged in a series relationship with a corresponding one of the one or more first switches. The one or more RF filters may provide at least about 20 dB of signal attenuation at about 400 kHz and / or about 27.12 MHz. The at least one energy storage device may include a capacitor. The capacitor of the apparatus may include a capacitance of about 1 mF to about 100 mF. The at least one energy storage device may include an inductor. The inductor of the apparatus may range from about 1 mH to about 100 mH. The apparatus may further include a transformer configured to step up a voltage from the at least one energy storage device. The apparatus may further include a controller connected to the at least one energy storage device and configured to modify a value of a capacitance or inductance of the at least one energy storage device. The energy storage device may include two or more energy storage devices arranged in a parallel relationship. The at least one active element of the process chamber may include a resistive heating element. The at least one active element of the process chamber may include a microwave signal generator, an ultraviolet light source, an infrared light source, or any combination thereof. The one or more first switches, a radio frequency (RF) filter, an energy storage device, and the one or more second switches may be arranged in a series relationship with the one or more current generators. The apparatus may further include a controller configured to prevent the one or more first switches and the one or more second switches from being closed simultaneously.

[0006] In one or more additional aspects, the controller may be operative to control switching of the one or more first switches and the one or more second switches, and the controller may have a processor coupled to the memory and directing the opening of the one or more first switches located between the at least one energy storage device and the at least one active element of the process chamber. The processor may further direct the closing of the one or more first switches subsequent to or simultaneously with the opening of the one or more second switches, the one or more second switches located between the at least one energy storage device and the one or more current generators.

[0007] The controller can direct the opening of the one or more second switches after a duration. Following or simultaneously with the opening of the one or more second switches, the controller can cause the closing of the one or more first switches. The controller can further operate to modify a capacitance or inductance value of the at least one energy storage device. The controller can further direct the closing of the one or more first switches in response to an indication that the at least one energy storage device has stored a predetermined amount of energy.

[0008] One or more additional aspects may include a process chamber, the process chamber including a first input port for receiving a radio frequency (RF) signal. The process chamber may further include a resistive heating element disposed at least partially within the process chamber. The process chamber may further include a current generator connected to the energy storage device and providing a current to the resistive heating element. The process chamber may further include a first switch disposed between the energy storage device and the resistive heating element, the first switch configured to interrupt a current coupled from the energy storage device to the resistive heating element. The process chamber may further include a second switch disposed between the current generator and the energy storage device, the second switch configured to interrupt a current coupled from the current generator to the energy storage device.

[0009] The process chamber may further include a controller that initiates the opening of the first switch and the closing of the second switch to enable the energy storage device to accumulate charge from the current generator. The process chamber controller may further close the first switch and open the second switch in response to the energy storage device accumulating a predetermined amount of charge. The process chamber controller may further operate such that the first switch and the second switch are not closed simultaneously. The energy storage device may include one or more capacitors having a total capacitance of about 1 mF to about 100 mF or one or more inductors having a total inductance of about 1 mH to about 100 mH. The RF signal received by the first input port may correspond to an approximately 400 kHz signal and / or an approximately 27.12 MHz signal. The process chamber may include two or more wafer processing stations. [Brief description of the drawings]

[0010] Various implementations disclosed herein are shown by way of example, and not by way of limitation, in the accompanying drawing figures, in which like reference characters refer to like elements and in which:

[0011] [Figure 1A] FIG. 1A illustrates an example apparatus for depositing or etching a film on or above a substrate using any number of processes, according to an embodiment.

[0012] [Figure 1B] FIG. 1B is a schematic diagram of a multi-station integrated circuit manufacturing chamber using active components according to one embodiment.

[0013] [Figure 2A] FIG. 2A is a schematic diagram illustrating a first switch state of an example apparatus for isolating an RF signal from an input signal conductor of a process station of a multi-station integrated circuit manufacturing chamber in accordance with one embodiment.

[0014] [Figure 2B] FIG. 2B is a schematic diagram illustrating a second switch state of the example device shown in FIG. 2A, according to one embodiment.

[0015] [Figure 2C] FIG. 2C shows example waveforms illustrating the charging and discharging of the energy storage device of FIGS. 2A and 2B, according to one embodiment.

[0016] [Figure 3A] FIG. 3A is a schematic diagram illustrating an energy storage device disposed in parallel within an apparatus for isolating an RF signal from an input signal conductor of a process station according to one embodiment.

[0017] [Figure 3B] FIG. 3B shows example waveforms depicting the charging and discharging of the parallel connected energy storage devices of FIG. 3A according to one embodiment. [Figure 3C] 3C shows example waveforms depicting the charging and discharging of the parallel connected energy storage devices of FIG. 3A according to one embodiment.

[0018] [Figure 4] FIG. 4 is a schematic diagram illustrating a controller coupled to an energy storage device in an example apparatus for isolating an RF signal from an input signal conductor of a process station according to one embodiment.

[0019] [Diagram 5] FIG. 5 is a schematic diagram illustrating a step-up transformer connected to an energy storage device in an example apparatus for isolating an RF signal from an input signal conductor of a process station according to one embodiment.

[0020] [Figure 6] FIG. 6 is a flow chart of an example method for isolating an RF signal from an input signal conductor of a process chamber according to one embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] In some integrated circuit manufacturing chambers, a radio frequency (RF) power source may be utilized to provide a signal that enables the formation of a plasma, which may include ionized gaseous compounds and / or elements, in the manufacturing chamber. In a multi-station integrated circuit manufacturing chamber, power from a single RF power source may be split in approximately equal proportions to provide a signal that enables the formation of a plasma at each individual station of the multi-station integrated circuit manufacturing chamber. Thus, a semiconductor wafer may simultaneously undergo a material deposition or removal (e.g., etching) process using a single RF input signal. In certain multi-station integrated circuit manufacturing chambers, RF energy may be coupled via a transmission line to structures located in each station of the manufacturing chamber. Such an arrangement may create an ionized electric or magnetic field in close proximity to the integrated circuit wafer being manufactured. In this manner, an ionized plasma may be generated and immediately deployed on the exposed surface of the integrated circuit wafer.

[0022] In certain applications, in addition to coupling RF energy to each station of the fabrication chamber, thermal energy may also be coupled to each station. In some arrangements, resistive heaters or other types of active elements may be placed on pedestals located below the integrated circuit wafer being fabricated, as described further herein. Thus, in such arrangements, the RF energy and thermal energy coupled to the fabrication stations may cooperate to accelerate material deposition and / or material removal (e.g., etching) processes. Additionally, by separately controlling the RF energy and thermal energy coupled to the fabrication stations, the deposition and / or material removal processes may be tightly controlled. This may improve process optimization, process repeatability, and the like.

[0023] In certain types of multi-station fabrication chambers, electrical conductors having relatively high current carrying capabilities may be utilized to convey signals from a current generator to active (e.g., heating) elements in a process station. Under certain circumstances, such electrical conductors may provide a path that allows conduction of an RF signal from a location in the fabrication chamber toward the current generator. Thus, RF power introduced into the fabrication chamber may be unintentionally coupled to locations in the fabrication chamber where the coupled RF power is not beneficial to or does not enhance aspects of the fabrication process. In other examples, RF power introduced into the fabrication chamber may be unintentionally drawn to locations outside the fabrication chamber. In many examples, such unwanted coupling of RF power to locations inside or outside the fabrication chamber may represent parasitic losses of RF power. In some examples, such parasitic losses of RF power may account for approximately 1% to 5% of the total RF power coupled to a particular station of the fabrication chamber. In some examples, such parasitic losses may vary between stations of a multi-station fabrication chamber. Thus, such variations may represent a source of error in calculations associated with determining the actual amount of RF power coupled to individual stations of a multi-station fabrication chamber.

[0024] Additionally, parasitic coupling of RF power to locations outside the fabrication chamber may cause interference with sensitive electronic circuit components located outside the fabrication chamber. For example, in certain types of circuits where relatively low level signals (e.g., voltage magnitudes) are utilized to communicate parameters, RF signals may couple to such circuit components, resulting in distortion of the signal amplitude. Such signal amplitude distortion may have negative effects on the control system. Examples of negative effects may include unintended process variations, damage to fabrication equipment, or other undesirable results. In one particular example, coupling of RF energy from a thermocouple to an output signal conductor may result in large variations in the reported temperature. Such variations and reported temperatures may result in large variations in the current conducted to heating elements located within individual stations of the fabrication chamber.

[0025] Thus, for the reasons stated above and potentially other reasons, decoupling of the RF signal from the input signal conductor of the process chamber may provide an approach towards minimizing station-to-station variations in the manufacturing process. Decoupling of the RF signal from the input signal conductor of the process chamber acts to confine the RF energy to a location within the manufacturing chamber. In certain embodiments, confining the RF energy to a location within the manufacturing chamber may include the use of one or more first switches located between at least one energy storage device and at least one active element of the process chamber. The one or more first switches may be operable to control a first current conducted between the at least one energy storage device and at least one active element of the process chamber. The active element of the process chamber may include, for example, a heater, but may also include other active elements such as a microwave signal generator, an ultraviolet light source, an infrared light source, or other energy sources capable of imparting energy to a precursor gas, a substrate, or other elements present within the process chamber. The one or more second switches may be disposed between the at least one energy storage device and the one or more voltage or current generators to control a current conducted between the one or more current generators and the at least one energy storage device.

[0026] Using such switches and a controller configured to control such switches, one or more first switches may be opened to isolate the voltage or current generator from the process chamber. Following the opening of the one or more first switches, one or more second switches may be closed, thereby allowing charging of the energy storage device by the current source (for example). After the energy storage device is charged, one or more second switches may be opened and one or more first switches may be closed. In this manner, charge may be allowed to be conducted from the energy storage device to a process station, such as a process station of a multi-station integrated circuit manufacturing chamber. In certain embodiments, the controller may operate to prevent one or more first switches and one or more second switches from closing simultaneously. By preventing the first and second switches from closing simultaneously, parasitic RF signals from the process station may be prevented from being coupled from the process chamber to the current generator. As a result of preventing coupling of RF energy from the process station to the current generator, the load impedance presented by the process station may remain stable. Thus, in response to the process station presenting a stable load impedance to the RF generator, the RF power coupled to the process station may be subject to less fluctuation, which may stabilize the RF power coupled to the process station, resulting in greater control over the manufacturing process, improved process repeatability, etc.

[0027] Certain embodiments and implementations may be used with many wafer fabrication processes, such as various plasma enhanced atomic layer deposition (PEALD) processes (e.g., PEALD1, PEALD2), various plasma enhanced chemical vapor deposition (e.g., PECVD1, PECVD2, PECVD3) processes, or on the fly during a single deposition process. In certain implementations, the RF power generator with multiple output ports may be used at any signal frequency, such as frequencies from 300 kHz to 60 MHz, which may include frequencies of 400 kHz, 440 kHz, 1 MHz, 2 MHz, 13.56 MHz, and 27.12 MHz. However, in other implementations, the RF power generator with multiple output ports may operate at any signal frequency. The signal frequency may include relatively low frequencies, such as 50 kHz to 300 kHz, as well as higher frequencies, such as about 60 MHz to about 100 MHz, without substantial limitation.

[0028] Certain embodiments described herein may show and / or describe a multi-station semiconductor manufacturing chamber including four process stations. However, the disclosed embodiments are intended to encompass a multi-station integrated circuit manufacturing chamber including any number of process stations. Thus, in certain implementations, the output signal of the RF power generator may be distributed among two process stations or three process stations of the manufacturing chamber. The output signal from the RF power generator may be distributed among more process stations without substantial limitation, such as five process stations, six process stations, eight process stations, ten process stations, etc. Certain embodiments described herein may show and / or describe the utilization of a single relatively low frequency RF signal, such as a frequency of about 300 kHz to about 2 MHz, as well as a single relatively high frequency RF signal, such as a frequency of 2 MHz to 100 MHz. The disclosed embodiments are intended to encompass the use of any number of radio frequencies, such as frequencies below 2 MHz, as well as any number of radio frequencies above 2 MHz.

[0029] The manufacturing of semiconductor devices involves integration circuit A manufacturing process may include depositing or etching one or more thin films on or above a planar or non-planar substrate. In some aspects of an integrated circuit manufacturing process, it may be useful to deposit a thin film that conforms to a unique substrate topography. One reaction that is often useful is chemical vapor deposition (CVD). In some CVD processes, gas-phase reactants introduced into stations of a reaction chamber undergo a gas-phase reaction simultaneously. The products of the gas-phase reaction are deposited on the surface of the substrate. This type of reaction may be driven or excited by the presence of a plasma, in which case the process may be referred to as a plasma-enhanced chemical vapor deposition (PECVD) reaction. As used herein, the term CVD is intended to include PECVD unless otherwise noted. CVD processes have certain disadvantages that make them less appropriate in some contexts. For example, mass transport limitations of CVD gas-phase reactions may result in a deposition effect that exhibits thicker deposition on top surfaces (e.g., top surfaces of a gate stack) and thinner deposition on concave surfaces (e.g., bottom corners of a gate stack). Furthermore, for some semiconductor dies having regions of different device densities, mass transport effects across the substrate surface may result in intra-die and intra-wafer thickness variations. Thus, during subsequent etching processes, the thickness variations may result in some regions being over-etched and other regions being under-etched, reducing device performance and die yield. Another difficulty with CVD processes is the frequent inability to deposit conformal films in high aspect ratio features. This problem may become increasingly severe as devices become smaller. These and other shortcomings of certain aspects of wafer fabrication processes are discussed in conjunction with FIGS. 1A and 1B.

[0030] In another example, some deposition processes include multiple film deposition cycles, each producing a distinct film thickness. For example, in atomic layer deposition (ALD), the thickness of the deposited layer may be limited by the amount of one or more film precursor reactants that may adsorb to the substrate surface to form an adsorption-limiting layer prior to the film-forming chemical reaction itself. Thus, ALD features include the formation of thin films, such as layers having the width of a single atom or molecule, which are used repeatedly and continuously. As the size of devices and features continues to shrink and three-dimensional devices and structures become more prevalent in integrated circuit (IC) design, the ability to deposit thin conformal films (e.g., films of material having uniform thickness relative to the shape of the underlying structure) continues to gain importance. Thus, considering that ALD is a deposition technique in which each deposition cycle deposits a single atomic or molecular layer of material, ALD appears well suited for the deposition of conformal films. In some examples, device fabrication processes that include ALD may include multiple ALD cycles, which may number in the hundreds or thousands. Multiple ALD cycles may be utilized to form films of virtually any desired thickness. Moreover, in view of the thinness and conformality of each layer, the films resulting from such processes can conform to the shape of any underlying device structure. In a particular implementation, an ALD cycle may include the following steps:

[0031] Exposure of a substrate surface to a first precursor.

[0032] Purging the reaction chamber with the substrate disposed therein.

[0033] Activation of a reaction at the substrate surface, such as by exposing the substrate surface to a plasma and / or a second precursor.

[0034] Purging the reaction chamber with the substrate disposed therein.

[0035] The duration of each ALD cycle may, at least in certain embodiments, be less than about 25 seconds, or less than about 10 seconds, or less than about 5 seconds. The plasma exposure step(s) of an ALD cycle may be of short duration, such as about 1 second or less in duration.

[0036] Turning now to the drawings, FIG. 1A shows an example apparatus for deposition or etching of a film on or above a substrate using any number of processes, according to various embodiments. The processing apparatus 100 of FIG. 1A depicts a single process station 102 of a process chamber having a single substrate holder 108 (e.g., pedestal) in its internal volume, which may be maintained under vacuum by a vacuum pump 118. A showerhead 106 and a gas delivery system 130 may be fluidly connected to the process chamber. The showerhead 106 and the gas delivery system 130 may enable delivery of film precursors, carrier gases and / or purge gases and / or process gases, secondary reactants, etc. An apparatus utilized for generating plasma in the process chamber is also shown in FIG. 1A. The apparatus illustrated generally in FIG. 1A may be specifically adapted for performing plasma enhanced CVD.

[0037] In FIG. 1A, the gas delivery system 130 includes a mixing vessel 104 for mixing and / or conditioning process gases for delivery to the showerhead 106. One or more mixing vessel inlet valves 120 may control the introduction of process gases to the mixing vessel 104. Certain reactants may be stored in a liquid state prior to evaporation and subsequent delivery to the process station 102 of the process chamber. The embodiment of FIG. 1A includes an evaporation point 103 for evaporating liquid reactants provided to the mixing vessel 104. In some implementations, the evaporation point 103 may include a heated liquid injection module. In some other implementations, the evaporation point 103 may include a heated evaporator. In still other implementations, the evaporation point 103 may be eliminated from the process station. In some implementations, a liquid flow controller (LFC) upstream of the evaporation point 103 may be provided to control the mass flow rate of liquid for evaporation and delivery to the process station 102.

[0038] The showerhead 106 may operate to distribute process gases and / or reactants (e.g., film precursors) to the substrate 112 at the process stations, the flow of which may be controlled by one or more valves (e.g., valves 120, 120A, 105) upstream from the showerhead. In the embodiment depicted in FIG. 1A, the substrate 112 is depicted as being located below the showerhead 106 and shown resting on a pedestal 108. The showerhead 106 may be of any suitable shape and may include any suitable number and arrangement of ports for distributing process gases to the substrate 112. In some implementations including more than one station, the gas delivery system 130 includes valves or other flow control structures upstream of the showerhead that can independently control the flow of process gases and / or reactants to each station to allow gas flow to one station while prohibiting gas flow to a second station. Additionally, the gas delivery system 130 may be configured to independently control the process gases and / or reactants delivered to each station in a multi-station apparatus such that the gas compositions provided to different stations are different (e.g., partial pressures of gas components may vary between stations at the same time).

[0039] In FIG. 1A, the volume 107 is depicted as being located below the showerhead 106. In some implementations, the pedestal 108 can be raised or lowered to expose the substrate 112 to the volume 107 and / or to change the size of the volume 107. Optionally, the pedestal 108 may be lowered and / or raised during a portion of the deposition process to adjust the process pressure, reactant concentration, etc. within the volume 107. The showerhead 106 and pedestal 108 are depicted as being electrically connected to an RF power generator 114 and a matching network 116 to provide signals to the plasma generating structures. Thus, in certain implementations, the showerhead 106 may function as an electrode for coupling RF power to the process station 102. In some implementations, the plasma energy is controlled (e.g., via a system controller having suitable machine-readable instructions and / or control logic) by controlling one or more of the process station pressure, gas concentration, power generated by the RF power generator, etc. For example, the RF power generator 114 and matching network 116 may be operated at any suitable RF power level and may operate to result in the formation of a plasma having a desired composition of radical gas species. In addition, the RF power generator 114 may provide RF power having two or more frequency components, such as a low frequency component (e.g., less than 2 MHz) and a high frequency component (e.g., greater than 2 MHz).

[0040] In the embodiment of FIG. 1A, an active element 161 may be disposed below the pedestal 108. The active element 161 may be utilized to provide heating of the pedestal 108 as well as the substrate 112. In some implementations, the active element 161 may correspond to a resistive heating coil. In certain implementations, the showerhead 106 and the active element 161 may cooperate to enhance the formation of a plasma. The enhanced formation of the plasma may result in accelerating material deposition and / or material removal (e.g., etching) processes occurring within the process station 102. A current generator 170 is shown supplying a current to the active element 161 by way of a conductor 109A.

[0041] In some implementations, the plasma generation and maintenance conditions are controlled via suitable hardware and / or suitable machine-readable instructions accessible to a system controller. The machine-readable instructions may include a non-transitory sequence of input / output control (IOC) instructions encoded on a computer-readable medium. In one example, the instructions for generating or maintaining the plasma are provided in the form of a plasma activation recipe of a process recipe. In some cases, the process recipes may be sequenced, whereby at least some instructions for the process can be executed simultaneously. In some implementations, instructions for setting one or more plasma parameters may be included in a recipe preceding the plasma generation process. For example, a first recipe may include instructions for setting the flow rate of an inert gas (e.g., helium) and / or a reactive gas, instructions for setting a plasma generator to a power set point, and a time delay instruction for the first recipe. A subsequent second recipe may include instructions for enabling the plasma generator and a time delay instruction for the second recipe. A third recipe may include instructions for disabling the plasma generator and a time delay instruction for the third recipe. It will be understood that these recipes may be further subdivided and / or repeated in any suitable manner within the scope of the present disclosure. In some deposition processes, the duration of the plasma strike may correspond to a duration of a few seconds, such as, for example, from about 3 seconds to about 15 seconds, or may include a longer duration, such as a duration of up to about 30 seconds. In certain implementations described herein, much shorter plasma strikes may be applied during a processing cycle. Such plasma strike durations may be on the order of less than about 50 milliseconds, with about 25 milliseconds being utilized in certain examples.

[0042] For simplicity, the processing apparatus 100 is depicted in FIG. 1A as a stand-alone station (102) of a process chamber for maintaining a low pressure environment. However, it will be understood that multiple process stations may be included in a multi-station process tool environment, as shown in FIG. 1B, which depicts a schematic diagram of an example multi-station process tool, according to various embodiments. The process tool 101 employs an integrated circuit fabrication chamber 165 that includes multiple process stations. The process stations may be utilized to perform processing operations on a substrate held via a wafer holder, such as the pedestal 108 of FIG. 1A, at a particular process station. In the example of FIG. 1B, the integrated circuit fabrication chamber 165 is depicted as including four process stations 151, 152, 153, and 154. Other similar multi-station processing apparatus may include more or fewer process stations depending on the implementation, e.g., the desired level of parallel wafer processing, size / space constraints, cost constraints, etc. Also depicted in FIG. 1B is a substrate handler robot 175 operable under the control of a system controller 190. Substrate handler robot 175 may be configured or adapted to transfer a substrate from a wafer cassette (not shown in FIG. 1B) from which the substrate may be transferred from loading port 180 into multi-station integrated circuit manufacturing chamber 165 and onto one of process stations 151, 152, 153, and 154.

[0043] FIG. 1B also illustrates an embodiment of a system controller 190 employed to control the process conditions and hardware states of the process tool 101. The system controller 190 may include one or more memory devices, one or more mass storage devices, and one or more processors. The one or more processors may include a central processing unit, analog and / or digital input / output connections, stepper motor control boards, etc. In some implementations, the system controller 190 controls all operations of the process tool 101. The system controller 190 executes system control software stored in the mass storage device, which may be loaded into the memory device and executed by the processor of the system controller. The software executed by the processor of the system controller 190 may include instructions for controlling the timing, mixture of gases, pressure of the fabrication chambers and / or stations, temperature of the fabrication chambers and / or stations, wafer temperature, position of the substrate pedestal, chuck and / or susceptor, number of cycles performed on one or more substrates, and other parameters of a particular process performed by the process tool 101. These programmed processes may include various types of processes, including, but not limited to, processes related to determining the amount of build-up on surfaces inside the chamber, processes related to depositing a film on a substrate including cycle number, determining and obtaining compensation cycle number, and processes related to cleaning the chamber. System control software that may be executed by one or more processors of system controller 190 may be configured in any suitable manner. For example, subroutines or control objects for various process tool components may be written to control the operation of the process tool components necessary to perform various tool processes.

[0044] In some embodiments, the software for execution by the processor of the system controller 190 may include input / output control (IOC) sequencing instructions for controlling the various parameters described above. For example, each stage of the deposition of a substrate and deposition cycle may include one or more instructions for execution by the system controller 190. Instructions for setting process conditions for an ALD conformal film deposition process stage may be included in a corresponding ALD conformal film deposition recipe stage. In some implementations, the recipe stages may be sequenced sequentially, whereby all instructions for a process stage are executed simultaneously with that process stage.

[0045] Other computer software and / or programs stored on the mass storage device of the system controller 190 and / or on storage accessible to the system controller 190 may be employed in some embodiments. Examples of programs or sections of programs for this purpose include a substrate positioning program, a process gas control program, a pressure control program, a heater control program, and a plasma control program. The substrate positioning program may include program code for process tool components used to load the substrate on the pedestal 108 (of FIG. 1A) and to control the spacing between the substrate and other parts of the process tool 101. The positioning program may include instructions for appropriately moving the substrate in and out of the reaction chamber as needed to deposit a film on the substrate and to clean the chamber.

[0046] The process gas control program may include code for controlling gas composition and flow rates, and code for controlling the flow of gas to one or more process stations prior to deposition, which may result in stabilization of pressure within the process stations. In some embodiments, the process gas control program includes instructions for introducing gas during formation of a film on a substrate in the reaction chamber. This may include introducing gas for different cycles for one or more substrates within a batch of substrates. The pressure control program may include code for controlling pressure within the process station, for example, by adjusting a throttle valve in an exhaust system of the process station, gas flow to the process station, etc. The pressure control program may include instructions for maintaining the same pressure during different cycles of deposition on one or more substrates during processing of a batch.

[0047] The heater control program may include code for controlling current to the current generator 170 used to heat the substrate. Thus, in certain embodiments, the current generator 170 may correspond to a voltage source, such as a voltage source for supplying direct or alternating current. In certain embodiments, the current generator 170 may correspond to a current generator, such as a current source that generates direct or alternating current. However, in any embodiment, it is contemplated that the current generator 170 may provide a sufficient voltage and / or a sufficient current to cause a measurable change in temperature of one or more gases present in all of the process stations 151, 152, 153, and 154. Such a change in temperature may act to cause or enhance a plasma generation process that acts to deposit material on or etch material from the substrate by ionized gaseous components. In the embodiment of FIG. 1B, the current generator 170 provides current to the active elements 161, 162, 163, and 164. However, in other embodiments, the current generator 170 may supply current to a different number of heating elements, such as less than four active elements. In other embodiments, the current generator 170 may supply current to a greater number of heating elements, such as five active elements, six active elements, eight active elements, ten active elements, etc., without substantial limitation.

[0048] System controller 190 may further control and / or manage the operation of RF power generator 114, which may generate and transmit RF power to multi-station integrated circuit fabrication chamber 165 via RF power input ports 167A, 167B, 167C, and 167D. Such operation may relate to determining upper and lower thresholds for RF power delivered to integrated circuit fabrication chamber 165, RF power on / off times, RF power on / off durations, duty cycles, operating frequencies, and the like. Additionally, system controller 190 may determine a set of normal operating parameters for the RF power delivered to integrated circuit fabrication chamber 165 by RF power input ports 167A, 167B, 167C, and 167D. Such parameters may include, for example, a reflection coefficient (e.g., a scattering parameter S 11 ) or voltage standing wave ratio in terms of the power reflected from RF power input ports 167A, 167B, 167C, and 167D. Such parameters may further include upper and lower thresholds for the voltage applied to RF power input ports 167A-167D, upper and lower thresholds for the current conducted through RF power input ports 167A, 167B, 167C, and 167D, and an upper threshold for the magnitude of the phase angle between the voltage and current conducted through RF power input ports 167A, 167B, 167C, and 167D. Such thresholds may be utilized in defining "out of range" RF signal characteristics. For example, a reflected power greater than an upper threshold may indicate an out of range RF power parameter. Similarly, an applied voltage or conducted current having a value less than a lower threshold or greater than an upper threshold may indicate an out of range RF signal characteristic.

[0049] In a particular implementation, the RF power generator 114 may operate to generate two frequencies, such as a first frequency of about 400 kHz and a second frequency of about 27.12 MHz. However, it should be noted that the RF power generator may be capable of generating additional frequencies, such as frequencies from about 300 kHz to about 100 MHz, and the implementation is not limited in this respect. In a particular embodiment, the signal generated by the RF power generator 114 may include at least one low frequency (LF), which may be defined as a frequency from about 300 kHz to about 2 MHz, and at least one high frequency (HF), which may be defined as a frequency greater than about 2 MHz and less than about 100 MHz.

[0050] In certain embodiments, multi-station integrated circuit fabrication chamber 165 may include input ports in addition to input ports 167A-167D. In certain embodiments, each process station of integrated circuit fabrication chamber 165 may utilize first and second input ports, where the first input port may be utilized to transmit a signal having a first frequency and the second input port may transmit a signal having a second frequency. The use of two or more frequencies may result in enhanced plasma characteristics, resulting in deposition or etch rates within certain limits and / or more easily controlled deposition / etch rates. The use of two or more frequencies may result in other desirable results and the disclosed implementations are not limited to these frequencies.

[0051] In some embodiments, there may be a user interface associated with the system controller 190. The user interface may include a display screen, a graphical software display of process tools and / or process conditions, and user input devices such as a pointing device, keyboard, touch screen, microphone, etc.

[0052] In some embodiments, the parameters adjusted by the system controller 190 may relate to process conditions. Non-limiting examples include process gas composition and flow rates, temperature, pressure, plasma conditions, etc. These parameters may be provided to a user in the form of a recipe. The recipe may be entered using a user interface. A recipe for an entire batch of substrates may include compensated cycle counts for one or more substrates in the batch to account for thickness trends during processing of the batch.

[0053] Signals for monitoring the manufacturing process may be provided by analog and / or digital input connections of the system controller 190 from various process tool sensors. Signals for controlling the process may be sent by analog and / or digital output connections of the process tool 101. Non-limiting examples of process tool sensors that may be monitored include mass flow controllers, pressure sensors (such as manometers), thermocouples, and the like. Sensors may also be included and used to monitor and determine build-up on one or more surfaces inside the chamber and / or thickness of a material layer on a substrate within the chamber. Appropriately programmed feedback and control algorithms may be used with data from these sensors to maintain process conditions.

[0054] The system controller 190 may provide program instructions for carrying out the deposition processes described above. The program instructions may control various process parameters such as DC power levels, pressure, temperature, number of cycles for the substrate, amount of build-up on at least one surface inside the chamber, etc. The instructions may control parameters for operating the in situ deposition of a film stack according to embodiments described herein.

[0055] For example, the system controller may include control logic for performing the techniques described herein, such as (a) determining an amount of deposition material currently accumulated on at least one internal region within the deposition chamber. Additionally, the system controller may include control logic for applying the amount of accumulated deposition material determined in (a), or a parameter derived therefrom, to a relationship between (i) the number of ALD cycles required to achieve a target deposition thickness, and (ii) a variable representing the amount of accumulated deposition material, to obtain a compensation number of ALD cycles to create a target deposition thickness given the amount of deposition material currently accumulated on an internal region of the deposition chamber. The system controller may include control logic for performing a compensation number of ALD cycles for one or more substrates in a batch of substrates. The system may further include control logic for determining that the accumulation in the chamber has reached an accumulation limit, and in response to the determination, stopping processing of the batch of substrates and initiating a cleaning operation inside the chamber.

[0056] In certain embodiments, it may be desirable to couple maximum power from RF power generator 114 to input ports 167A-167D of multistation integrated circuit manufacturing chamber 165. Thus, to provide maximum power coupling from RF power generator 114, parasitic losses introduced by coupling of RF signals to locations external to multistation integrated circuit manufacturing chamber 165 may be reduced. FIG. 2A is a schematic diagram illustrating states of one or more first switches in an example apparatus operative to isolate an RF signal from an input signal conductor of a process station of a multistation integrated circuit manufacturing chamber, according to embodiment 200. Although FIG. 2A shows only a single process station (151), in at least certain embodiments, an apparatus similar to FIG. 2A may be used in conjunction with additional process stations (e.g., 152, 153, and 154) of a multistation integrated circuit manufacturing chamber.

[0057] In FIG. 2A, the current generator 170 represents any type of AC or DC generator. In certain embodiments, the current generator 170 is configured to generate a predefined current, the amplitude of the output voltage may vary. In other embodiments, the current generator 170 generates a predefined voltage, the amplitude of the output current may vary. It is noted that the disclosed embodiments are intended to encompass all types of voltage and current generators that operate to generate AC or DC current. It will be appreciated that in response to the closing of the switches 210 and 225, the current may be conducted from the current generator 170, through the energy storage device 215, and through the RF filter 220. Upon reaching the active element 161 in the process station 151, the conducted current may cause resistive heating in the process station 151. In other embodiments, the current conducted from the current generator 170 may be coupled to additional active elements, such as an ultraviolet light source, an infrared heat source, and the disclosed embodiments are intended to encompass any such active elements utilized to energize the process stations of a fabrication chamber.

[0058] It will also be appreciated that as a result of the closure of switches 210 and 225, a certain amount of RF energy may be parasitically coupled to the conductor of active element 161. Thus, as shown in FIG. 2A, RF energy from input port 167A may be radiated to (conducted by) conductor 250. Also, as shown in FIG. 2A, sinusoidal waveform 230 may propagate in the direction of current generator 170. In certain embodiments, such parasitic coupling may represent a percentage (e.g., about 1%, or about 2%, or about 5%) of the RF signal power coupled to the station via input port 167A. It will be appreciated that such parasitic losses do not contribute to or aid the integrated circuit manufacturing process. Rather, such parasitic coupling represents non-productive RF power. Moreover, such parasitic coupling may represent additional load that may vary as a function of time. These variations in the load presented by the process station 151 in combination with the parasitic couplings may adversely affect the impedance match between the RF power generator 114 and the RF power input port 167 A. Furthermore, such parasitic signals may radiate and / or conduct RF energy that may interfere with sensitive electronic circuitry located along or electrically connected to the path between the current generator 170 and the process station 151.

[0059] Thus, to prevent parasitic coupling of RF energy from the process station 151, the switching states of the switch 225 and the switch 210 may be adjusted to open a circuit path between the active element 161 and the current generator 170. In the embodiment of FIG. 2A, the switch 225 may be occasionally or periodically opened, thereby preventing the conduction of RF signal current from the process station 151 toward the current generator 170. While the switch 225 is open, the sinusoidal waveform 230 cannot pass between the process station 151 and the current generator 170. Thus, as shown in FIG. 2A, in response to the opening of the switch 225, the sinusoidal waveform 230 is reduced in amplitude, as represented by the stationary waveform 235. In certain embodiments, the switch 225 may be located in close proximity to the process station 151, thereby limiting the physical distance traversed by the sinusoidal waveform 230 before it is turned off by the switch 225. In certain embodiments, by limiting the physical distance between switch 225 and process station 151, a conductor length, such as the length of conductor 250, may be kept correspondingly short. By constraining conductor 250 to a relatively short length, at least compared to the wavelength of the RF signal generated by RF power generator 114, conductor 250 may be prevented from behaving as an antenna. Thus, in certain embodiments, the length of conductor 250 (e.g., between process station 151 and switch 225) may be kept to a value less than λ / 10, where λ corresponds to the wavelength of the highest frequency signal generated by RF power generator 114.

[0060] In the embodiment of FIG. 2A, the second switch 210 may be closed while the switch 225 is open. The closure of the switch 210 causes the current generator 170can apply a charge to the energy storage device 215. The energy storage device 215 may represent a capacitive device that can store energy in the form of a charge. Alternatively, the energy storage device 215 may represent an inductive device and store energy in the form of a current. The energy storage device 215 may also operate to store energy utilizing other phenomena, such as energy storage via a reversible chemical reaction. It is noted that the disclosed embodiments are intended to encompass all devices capable of energy storage.

[0061] 2B is a schematic diagram illustrating a second switch state of the example apparatus shown in FIG. 2A, in accordance with embodiment 201. In FIG. 2B, in response to the energy storage device 215 being fully (or at least substantially) charged, the switch 210 may be opened, thereby blocking the flow of charge from the current generator 170. Following the opening of the switch 210, the switch 225 may be closed. Such closure of the switch 225 may allow current to be conducted from the energy storage device 215 to the active element 161. Additionally, in response to the switch 210 being opened, conduction of the parasitic RF signal from the active element 161 towards the current generator 170 may be prevented.

[0062] Returning briefly to the embodiment of FIG. 2A , the RF filter 220 may operate to provide filtering (or attenuation) of RF signals that may be present in response to RF signal conduction through the case or housing of the second switch 225 or through any other signal path. In certain embodiments, the RF filter 220 may operate as a low pass filter and may block or significantly attenuate frequencies generated by the RF power generator 114. Thus, in one example, if the RF power generator 114 generates a composite signal of about 400 kHz and about 27.12 MHz, the RF filter 220 may be designed to reject these frequencies. In an example embodiment, the RF filter 220 may be designed or configured to pass frequencies below 100 kHz and attenuate frequencies above 100 kHz. Thus, only a negligible amount of RF energy (e.g., 400 kHz, 13.56 MHz, 27.12 MHz) generated by the RF power generator 114 is allowed to pass through the RF filter 220 from the process station 151. In certain embodiments, RF filter 220 may attenuate frequencies above 100 kHz by at least 20 dB, although the disclosed embodiments are intended to encompass, without limitation, low pass filters that attenuate signals by different amounts, such as 25 dB, 30 dB, 35 dB, 40 dB, etc.

[0063] 2C illustrates example waveforms (275) illustrating the charging and discharging of the energy storage device of FIGS. 2A and 2B in accordance with embodiment 202. As shown in the first portion of FIG. 2C, in response to first switch 225 being opened and switch 210 being closed, energy storage device 215 may be charged. Thus, for example, if energy storage device 215 represents a capacitor, the voltage across device 215 is substantially charged according to equation (1) below:

number

[0064] In formula (1), V 170where C corresponds to the voltage generated by the current generator 170, C corresponds to the capacitance of the energy storage device 215, and R corresponds to the resistance presented by one or more resistive heating elements of the active element 161. Thus, as shown in FIG. 2C, in response to switch 210 being closed and switch 225 being opened, the energy storage device 215 is shown as being charged. In response to switch 210 being opened, thereby interrupting the flow of charge from the current generator 170, the energy storage device 215 is shown as being discharged. It should be noted that while FIG. 2C illustrates a complete (or near complete) charging and discharging of the energy storage device 215, in certain embodiments, the energy storage device may be only partially charged / discharged. The period for which the switches 210 / 225 remain open / closed may be adjusted to control the amount of charging / discharging of the energy storage device.

[0065] Waveform 275 of FIG. 2C illustrates a case in which energy storage device 215 corresponds to a capacitor and current generator 170 corresponds to V MAX It should be noted that waveform 275 represents a voltage profile that may be observed when generating a voltage of 10 V. However, depending on whether energy storage device 215 represents a different type of energy storage device (e.g., an inductor, a battery, etc.), waveform 275 may reflect different charge / discharge profiles, and the disclosed embodiments are not limited in this respect. It should also be noted that, if energy storage device 215 includes a capacitor, the selection of the capacitance value may depend on many factors. These factors may include the amount of energy (e.g., in joules) stored by energy storage device 215, the switching 225may include the rate at which the active element 161 switches, the current flow of the active element 161, etc. In certain embodiments, the energy storage device 215 includes a capacitor having a value of about 1 mF to about 100 mF. In certain other embodiments, the energy storage device 215 includes an inductor having a value of about 1 mH to about 100 mH. In certain other embodiments, the energy storage device includes a battery configured for storage of about 1 Joule (1 Watt-second) to 100 Joules (100 Watt-seconds).

[0066] In certain other embodiments, the energy storage device 215 may include a capability to provide enough energy to power a plurality of active elements 161 for perhaps 10-15 minutes. Thus, in one example, if the active elements utilize an approximately 50% duty cycle to provide 2 kW, four active elements (e.g., one active element for each of the process stations 151-154 of FIG. 1B) would consume 4 kW (2 kW x 0.5 x 4 process stations). Furthermore, if each active element provides power for a duration of approximately 10 minutes per hour, the energy storage device may store, for example, 0.667 kWh (4 process stations x 10 / 60). In other embodiments that may utilize active elements that utilize duty cycles other than 50% and consume different amounts of input power, the energy storage device may include a capability to store 0.2 kWh to 1.5 kWh.

[0067] It will be appreciated that during the discharging of the energy storage device 215 (e.g., while the switch 210 is maintained in an open position), little or no current may flow from the current generator 170. Thus, in such a case, the current generator 170 may be idle until the switch 210 is closed again and the switch 225 is opened. Thus, FIG. 3A is a schematic diagram showing energy storage devices arranged in parallel in an apparatus for isolating an RF signal from an input signal conductor of a process station according to an embodiment 300. In FIG. 3A, the parallel arrangement of the energy storage devices, together with the RF filter and the first and second switches arranged in series with each energy storage device, allows the first energy storage device (e.g., 215A) to be charged while the second energy storage device (e.g., 215B) is being discharged. It will be appreciated that as a result of such an arrangement, the current generator 170 is rarely (or perhaps never) idle.

[0068] For example, during a first period of time, switch 210A may be closed while switch 225A is open, thereby allowing energy storage device 215A to be charged by current generator 170 without allowing current to be conducted to active element 161. In response to energy storage device 215A charging to a predetermined level, switch 225A may be closed and switch 210A may be opened, thereby allowing conduction of charge from energy storage device 215A to active element 161. Additionally, while charge is being conducted from energy storage device 215A to active element 161, switch 225B may be opened and switch 210B may be closed. Closing switch 210B may allow conduction of charge from current generator 170 to energy storage device 215B, for example, until energy storage device 215B charges to a predetermined level. In response to energy storage device 215B charging to a predetermined level, switch 225B may be closed and switch 210B may be opened, thereby allowing conduction of charge from energy storage device 215B to active element 161. While charge is being conducted from energy storage device 215B to active element 161, switch 225A may be opened and switch 210A may be closed, thereby again allowing charge to flow from current generator 170 to energy storage device 215A.

[0069] 3A enables the current generator 170 to supply current to the first energy storage device while the second energy storage device is being discharged. In response to the charging of the first energy storage device and the discharging of the second energy storage device, the first energy storage device may be discharged while the second energy storage device may be charged. In this manner, the first and second energy storage devices may be alternately charged and discharged in a manner that keeps the current generator 170 substantially always in an active (current supplying) state.

[0070] 3B (embodiment 301) and 3C (embodiment 302) show example waveforms depicting the charging and discharging of the parallel connected energy storage devices of FIG. 3A. FIG. 3B (waveform 375) depicts the voltage measured at energy storage device 215A, and FIG. 3C (waveform 376) depicts the voltage measured at energy storage device 215B. Referring to FIG. 3B, at time t0, switch 210A is closed and switch 225A is opened, thereby allowing charge to accumulate in energy storage device 215A. At time t1, switch 210A is opened and switch 225A is closed, thereby discontinuing the accumulation of charge in energy storage device 215A and V MAX At time t2, switch 210A is again closed and switch 225A is opened, thus discharging device 215B from a voltage corresponding to V MAX At time t3, switch 210A may be opened again and switch 225A may be closed, thereby allowing energy storage device 215A to re-accumulate at V MAX It becomes possible to discharge from

[0071] 3C, while switch 210A is closed and switch 225A is open, such as between times t0 and t1, the voltage measured at energy storage device 215B is maintained at an initial state (e.g., about 0 volts). At t1, switch 210B may be closed and switch 225B may be open while switch 210A is open and switch 225A is closed, thereby allowing charge to accumulate in energy storage device 215B. It will be appreciated that energy storage device 215B is chargeable, as shown by waveform 376, while energy storage device 215A is dischargeable, as shown by waveform 375. Such a complementary arrangement allows current generator 170 to remain in a current supplying state substantially all the time.

[0072] It should be noted that while FIGS. 3A-3C refer to a parallel combination of two energy storage devices (e.g., 215A and 215B), in other embodiments, more energy storage devices may be utilized. Thus, in certain embodiments, a parallel combination of three, four, or five energy storage devices may be utilized. In still other embodiments, even more energy storage devices may be utilized, such as six energy storage devices, eight energy storage devices, etc., without substantial limitation. It should also be noted that the switch closure / switch open durations (e.g., t0-t1, t1-t2, etc.) depicted in FIGS. 3B-3C may correspond to durations of, for example, about 10 milliseconds to about 10 minutes. It should also be noted that while FIGS. 3B / 3C depict a complete (or near complete) charging and discharging of the energy storage devices, in certain embodiments, the energy storage devices may only be partially charged / discharged. The durations that the switches 210A / 225A and 210B / 225B remain open / closed may be adjusted to control the amount of charging / discharging of the energy storage devices.

[0073] FIG. 4 is a schematic diagram illustrating a controller connected to an energy storage device in an example apparatus for isolating an RF signal from an input signal conductor of a process station, according to an embodiment 400. In the embodiment of FIG. 4, the controller 410 may operate to modify (e.g., increase or decrease) the energy storage capacity of the energy storage device 215. Thus, in one example, if the energy storage device 215 corresponds to a capacitor having one or more parallel plates, the controller 410 may operate to move one or more plates between other plates of the parallel plate capacitor. In another embodiment including the use of a capacitive element for the energy storage device 215, the controller 410 may operate to switch in an additional capacitive element arranged in parallel with the other capacitive elements to increase the capacitance of the energy storage device 215. In certain embodiments, such switching of the capacitive elements may substantially adjust the energy storage capacity of the capacitive device according to the following equation (2):

number

[0074] In another embodiment, if the energy storage device 215 includes one or more inductive elements, the controller 410 may operate to switch in additional inductive elements placed in series with other inductive elements to increase the overall inductance of the energy storage device 215. In one embodiment, such switching of inductive elements may substantially adjust the energy storage capability of the inductive device according to equation (3) below.

number

[0075] 5 is a schematic diagram illustrating a step-up transformer connected to an energy storage device in an example apparatus for isolating an RF signal from an input signal conductor of a process station according to an embodiment 500. In the embodiment of FIG. 5, the step-up transformer 510 may operate to increase the output voltage from the energy storage device 215 to the rated voltage of the active element 161.

[0076] It should be noted that different arrangements of energy storage devices may be utilized in the process stations of a multi-station integrated circuit fabrication chamber. For example, a parallel arrangement of energy storage devices as shown in FIG. 3A may be utilized to supply current to active element 161 of FIG. 1B, whereas a single energy storage device as shown in FIG. 2A / 2B may be utilized to provide current to active element 164 of FIG. 1B. In certain embodiments, the determination of the number of energy storage devices utilized with a particular active element of an individual process station may be based, at least in part, on the desired charge / discharge rates, the duty cycle of the energy storage devices, the capacitance of the energy storage devices, the current requirements of the active elements, and / or other constraints.

[0077] FIG. 6 is a flow chart of an example method of isolating an RF signal from an input signal conductor of a process chamber according to an embodiment 600. It should be noted that the disclosed embodiments are intended to encompass variations of FIG. 6, including methods that include additional operations to those of FIG. 6, methods that include operations performed in a different order than those of FIG. 6, and methods that include fewer steps than those shown in FIG. 6. Additionally, the apparatus of FIGS. 1A, 1B, 2A, 2B, 3A, 4, and 5 are suitable for performing the method of FIG. 6, but the method may be performed by other apparatus, systems, or arrangements, and the disclosed embodiments are not limited in this respect. The method of FIG. 6 begins at 610 with opening one or more first switches, where the one or more first switches are located between at least one energy storage device and at least one active element of the process chamber. In certain embodiments, the opening of the one or more first switches located between the at least one energy storage device and the active element of the process chamber may allow a current source or a voltage source to charge the energy storage device to a predetermined potential.

[0078] The method of Figure 6 may continue at 615 with closing the one or more first switches following or simultaneously with the opening of the one or more second switches. The one or more second switches may be located between at least one energy storage device and one or more current generators. In certain embodiments, 615 may enable discharging of the energy storage device to power active elements of a process station of a multi-station integrated circuit manufacturing chamber.

[0079] The method of FIG. 6 may include the use of a processor to direct the opening of one or more second switches after a duration and initiate the closing of one or more first switches following or simultaneously with the opening of the one or more second switches. In one example, returning briefly to FIG. 2A, a processor (not shown) may direct the opening of switch 210 after a duration that allows current generator 170 to charge energy storage device 215. Following or simultaneously with the opening of switch 210, the processor may initiate the closing of switch 225 to allow current to flow from the energy storage device to active element 161. The method of FIG. 6 may additionally include a processor that further operates to modify a capacitance or inductance value of the energy storage device. For example, returning briefly to FIG. 4, controller 410 may include the use of a processor to modify a capacitance or inductance value of energy storage device 215. The method of FIG. 6 may additionally include a processor that, in response to an indication that the at least one energy storage device has stored a predetermined threshold amount of energy, further directs the closure of one of the first switches. For example, briefly returning to FIG. 2, a processor (not shown in FIG. 2) may further direct the closure of one of the first switches when the energy storage device reaches a maximum voltage (V MAX ) has been achieved, thereby allowing current to flow from energy storage device 215 to active element 161.

[0080] Broadly speaking, the controller 190 may be defined as electronic equipment having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or FPGAs having one or more microprocessors, or microcontrollers, or field programmable gate arrays (FPGAs), or systems on chips (SoCs) that execute the program instructions (e.g., software). The program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters may, in some embodiments, be part of a recipe defined by a process engineer to accomplish one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0081] In some implementations, the controller may be part of or connected to a computer that is integrated into, connected to, or otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud," i.e., in whole or in part, of a fab host computer system, allowing remote access of wafer processing. The computer may allow remote access to the system to monitor the current progress of a manufacturing operation, to examine the history of past manufacturing operations, to examine trends or performance criteria of multiple manufacturing operations, to change parameters of a current process, to set processing steps and track a current process, or to start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that allows for input or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and to the type of tool the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by including one or more individual controllers that are networked together and work toward a common purpose, such as the process and control described herein. One example of a distributed controller for such purposes is one or more integrated circuits on the chamber that are located remotely (such as at the platform level or as part of a remote computer) and communicate with one or more integrated circuits that cooperatively control the process at the chamber.

[0082] In the foregoing detailed description, numerous specific details have been set forth in order to provide a thorough understanding of the presented embodiments or implementations. The disclosed embodiments or implementations may be practiced without some or all of these specific details. In other instances, well-known process operations have not been described in detail so as not to unnecessarily obscure the disclosed embodiments or implementations. While the disclosed embodiments or implementations have been described in conjunction with specific embodiments or implementations, it will be understood that such description is not intended to limit the disclosed embodiments or implementations.

[0083] The foregoing detailed description has been directed to specific embodiments or implementations for purposes of illustrating the disclosed aspects. However, the teachings herein can be applied and implemented in many different ways. In the foregoing detailed description, reference is made to the accompanying drawings. Although the disclosed embodiments or implementations have been described in sufficient detail to enable one skilled in the art to practice the embodiments or implementations, it will be understood that these examples are not limiting and that other embodiments or implementations may be used and changes may be made to the disclosed embodiments or implementations without departing from the spirit and scope thereof. In addition, it should be understood that the conjunction "or" is intended in an inclusive sense herein where appropriate, unless otherwise indicated. For example, the phrase "A, B, or C" is intended to include the possibilities of "A", "B", "C", "A and B", "B and C", "A and C", and "A, B and C".

[0084] In this application, the terms "semiconductor wafer," "wafer," "substrate," "wafer substrate," and "partially fabricated integrated circuit" are used interchangeably. One of ordinary skill in the art will appreciate that the term "partially fabricated integrated circuit" can refer to a silicon wafer during any of the many stages of integrated circuit fabrication on a silicon wafer. Wafers or substrates used in the semiconductor device industry may include diameters of 200 mm, or 300 mm, or 450 mm. The foregoing detailed description contemplates that embodiments or implementations are implemented on a wafer or in connection with processes related to the formation or manufacture of a wafer. However, the disclosed embodiments are not limited to such embodiments / implementations. Workpieces may be of various shapes, sizes, and materials. In addition to semiconductor wafers, other workpieces may utilize the claimed subject matter and may include various items such as printed circuit boards, or the manufacture of printed circuit boards, etc.

[0085] Unless otherwise clearly required in the context of this disclosure, throughout the specification and claims, the words "comprise", "comprising", and the like are to be construed in an inclusive sense, i.e., "including, but not limited to", rather than an exclusive or exhaustive sense. Also, words using the singular or plural generally include the plural or singular, respectively. When the word "or" is used in connection with a list of two or more items, the word covers all interpretations of that word: any of the items in the list, all of the items in the list, and any combination of the items in the list. The term "implementation" refers to implementations of the techniques and methods described herein, as well as physical objects that embody the structures and / or incorporate the techniques and / or methods described herein. The present invention can be realized, for example, in the following manner. Application example 1: 1. An apparatus for coupling a signal to a process chamber, comprising: one or more first switches positioned between at least one energy storage device and at least one active element of the process chamber when disposed in the process chamber and configured to control a first current conducted between the at least one energy storage device and the at least one active element of the process chamber; one or more second switches positioned between the at least one energy storage device and one or more current generators and configured to control current conduction between the one or more current generators and the at least one energy storage device when disposed in the process chamber; An apparatus comprising: Application example 2: The apparatus of application example 1, further comprising one or more radio frequency (RF) filters, each of the one or more RF filters being in series with a corresponding one of the one or more first switches. Application example 3: The apparatus of application example 2, wherein at least one of the one or more RF filters provides a signal attenuation of at least about 20 dB at about 400 kHz or about 27.12 MHz. Application example 4: The apparatus of application example 1, wherein the at least one energy storage device includes a capacitor or an inductor. Application example 5: The apparatus of application example 4, wherein the capacitor has a capacitance of about 1 mF to about 100 mF, or the inductor has an inductance of about 1 mH to about 100 mH. Application example 6: The apparatus of application example 1, further comprising a transformer configured to increase a voltage from the at least one energy storage device. Example 7: The apparatus of application example 1, further comprising a controller connected to the at least one energy storage device and configured to modify a capacitance or inductance value of the at least one energy storage device. Application example 8: The apparatus of application example 1, wherein the at least one energy storage device includes two or more energy storage devices arranged in a parallel relationship. Example 9: The apparatus of application example 1, wherein the at least one active element of the process chamber includes a resistive heating element, a microwave signal generator, an ultraviolet light source, an infrared light source, or a combination thereof. Example 10: An apparatus according to application example 1, wherein the one or more first switches, a radio frequency (RF) filter, the energy storage device, and the one or more second switches are arranged in series with the one or more current generators. Example 11: The apparatus of application example 10, further comprising a controller configured to prevent the one or more first switches and the one or more second switches from being closed simultaneously. Example 12: A controller that controls switching of one or more first switches and one or more second switches, a processor coupled to the memory and configured to direct opening of the one or more first switches located between at least one energy storage device and at least one active element of the process chamber; the processor is further configured to direct a closing of the one or more first switches subsequent to or simultaneously with the opening of the one or more second switches located between the at least one energy storage device and one or more current generators. controller. Application example 13: A controller of application example 12, wherein the processor instructs the opening of the one or more second switches after a certain duration, and initiates the closing of the one or more first switches following or simultaneously with the opening of the one or more second switches. Example 14: 16. The controller of application example 15, wherein the processor is further operative to modify a capacitance or inductance value of the at least one energy storage device. Example 15: The controller of application example 12, wherein the processor further instructs the closure of the one or more first switches in response to an indication that the at least one energy storage device has stored a predetermined amount of energy. Application example 16: 1. A process chamber comprising: a first input port for receiving a radio frequency (RF) signal; a resistive heating element disposed at least partially within the process chamber; a current generator connected to an energy storage device to supply a current to the resistive heating element; a first switch disposed between the energy storage device and the resistive heating element, the first switch configured to interrupt current coupled from the energy storage device to the resistive heating element; a second switch disposed between the current generator and the energy storage device, the second switch configured to interrupt current coupled from the current generator and the energy storage device; 1. A process chamber comprising: Example 17: The process chamber of Example 16, further comprising a controller that (i) opens the first switch and closes the second switch to enable the energy storage device to accumulate charge from the current generator, or (ii) closes the first switch and opens the second switch in response to the energy storage device accumulating a predetermined amount of charge. Application example 18: 18. The process chamber of claim 17, wherein the controller operates such that the first switch and the second switch are not closed simultaneously. Example 19: The process chamber of application example 16, wherein the RF signal received by the first input port includes a signal of about 400 kHz and / or a signal of about 27.12 MHz. Example 20: The process chamber of application example 16, wherein the process chamber includes two or more wafer processing stations.

Claims

1. 1. An apparatus for coupling a signal to a process chamber, comprising: one or more first switches positioned between at least one energy storage device and at least one active element of the process chamber when disposed in the process chamber and configured to control a first current conducted between the at least one energy storage device and the at least one active element of the process chamber; one or more second switches positioned between the at least one energy storage device and one or more current generators when disposed in the process chamber and configured to control current conduction between the one or more current generators and the at least one energy storage device; a controller that (i) opens the first switch and closes the second switch to enable the energy storage device to store charge from the current generator, and (ii) closes the first switch and opens the second switch in response to the energy storage device storing a predetermined amount of charge; An apparatus comprising:

2. 10. The apparatus of claim 1, further comprising one or more radio frequency (RF) filters, each of the one or more RF filters in series with a corresponding one of the one or more first switches.

3. 3. The apparatus of claim 2, wherein at least one of the one or more RF filters provides at least about 20 dB of signal attenuation at about 400 kHz or about 27.12 MHz.

4. 10. The apparatus of claim 1, wherein the at least one energy storage device comprises a capacitor or an inductor.

5. 5. The apparatus of claim 4, wherein the capacitor comprises a capacitance of about 1 mF to about 100 mF or the inductor comprises an inductance of about 1 mH to about 100 mH.

6. 10. The apparatus of claim 1, further comprising a transformer configured to step up a voltage from the at least one energy storage device.

7. 10. The apparatus of claim 1, further comprising a controller coupled to the at least one energy storage device and configured to modify a capacitance or inductance value of the at least one energy storage device.

8. 10. The apparatus of claim 1, wherein the at least one energy storage device comprises two or more energy storage devices arranged in a side-by-side relationship.

9. 10. The apparatus of claim 1, wherein the at least one active element of the process chamber comprises a resistive heating element, a microwave signal generator, an ultraviolet light source, an infrared light source, or a combination thereof.

10. 10. The apparatus of claim 1 , wherein the one or more first switches, a radio frequency (RF) filter, the energy storage device, and the one or more second switches are arranged in a series relationship with the one or more current generators.

11. 11. The apparatus of claim 10, further comprising a controller configured to prevent the one or more first switches and the one or more second switches from being closed simultaneously.

12. A controller that controls switching of one or more first switches and one or more second switches, a processor coupled to a memory and configured to direct the opening of the one or more first switches and the closing of the one or more second switches located between at least one energy storage device and at least one active element of a process chamber, and to enable the energy storage device to store charge from a current generator; the processor is further configured to direct, in response to the energy storage device accumulating a predetermined amount of charge, a closing of the one or more first switches subsequent to or simultaneously with the opening of the one or more second switches located between the at least one energy storage device and one or more current generators. controller.

13. 13. The controller of claim 12, wherein the processor directs the opening of the one or more second switches after a duration and initiates the closing of the one or more first switches following or simultaneously with the opening of the one or more second switches.

14. 13. The controller of claim 12, wherein the processor is further operative to modify a capacitance or inductance value of the at least one energy storage device.

15. 1. A process chamber comprising: a first input port for receiving a radio frequency (RF) signal; a resistive heating element disposed at least partially within the process chamber; a current generator connected to an energy storage device to provide a current to the resistive heating element; a first switch disposed between the energy storage device and the resistive heating element, the first switch configured to interrupt current coupled from the energy storage device to the resistive heating element; a second switch disposed between the current generator and the energy storage device, the second switch configured to interrupt current coupled from the current generator and the energy storage device; a controller that (i) opens the first switch and closes the second switch to enable the energy storage device to store charge from the current generator, and (ii) closes the first switch and opens the second switch in response to the energy storage device storing a predetermined amount of charge; 1. A process chamber comprising:

16. The process chamber of claim 15, wherein the controller operates such that the first switch and the second switch are not closed simultaneously.

17. 16. The process chamber of claim 15, wherein the RF signal received by the first input port comprises an approximately 400 kHz signal and / or an approximately 27.12 MHz signal.

18. 16. The process chamber of claim 15, wherein the process chamber comprises two or more wafer processing stations.

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