High precision edge ring centering for substrate processing systems

Abstract

An edge ring centering system for a plasma processing system includes a processing chamber including a substrate support and R edge ring lift pins, where R is an integer greater than or equal to 3. The edge ring includes P grooves located on a bottom surface, where P is an integer greater than or equal to R. The robot arm includes an end effector. The controller is configured to: cause an optical sensor to detect a first position of the edge ring on the end effector; cause the robot arm to deliver the edge ring to a first center position on the edge ring lift pins; retrieve the edge ring from the edge ring lift pins; and cause the optical sensor to detect a second position of the edge ring on the end effector.

Description

[Technical field]

[0001] The present disclosure relates to centering an edge ring for a substrate processing system, and more particularly to precision centering of a removable edge ring for a plasma processing system. [Background technology]

[0002] The background discussion set forth herein is for general discussion in the context of the present disclosure. The work of the inventors named herein, to the extent described in this "Background" section, and aspects of this description that may not otherwise be prior art at the time of filing, are not admitted, explicitly or implicitly, as prior art to the present disclosure.

[0003] The substrate processing system may be used to process substrates such as semiconductor wafers. Exemplary processes that may be performed on the substrate include, but are not limited to, chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, and / or other etching, deposition, or cleaning processes. The substrate may be placed on a substrate support, such as a pedestal, electrostatic chuck (ESC), or the like, in a processing chamber of the substrate processing system. During etching, a gas mixture including one or more precursors may be introduced into the processing chamber, and a plasma may be used to cause a chemical reaction.

[0004] The substrate support may include a ceramic layer disposed to support the substrate. For example, the substrate may be electrostatically secured to the ceramic layer during processing. The substrate support may include an edge ring disposed about an outer portion of the substrate support (e.g., outside and / or adjacent to the periphery). The edge ring may be provided to confine and / or shape a plasma located above the substrate and to improve etch uniformity. Summary of the Invention

[0005] An edge ring centering system for a plasma processing system includes a process chamber including a substrate support and R edge ring lift pins, where R is an integer greater than or equal to 3. The edge ring includes P grooves located on a bottom surface, where P is an integer greater than or equal to R. The robot arm includes an end effector. The controller is configured to cause the optical sensor to detect a first position of the edge ring on the end effector, cause the robot arm to deliver the edge ring to a first centered position on the edge ring lift pins, remove the edge ring from the edge ring lift pins, and cause the optical sensor to detect a second position of the edge ring on the end effector.

[0006] In other features, the controller is further configured to generate a first offset based on a difference between the second position and the first position. The controller is further configured to generate a first adjusted center position for the edge ring based on the first center position and the first offset.

[0007] In other features, the controller is further configured to cause the robot arm to deliver the edge ring onto the edge ring lift pins based on the first adjusted center position and to remove the edge ring from the edge ring lift pins, and to cause the optical sensor to detect a third position of the edge ring on the robot arm.

[0008] In other features, the controller is further configured to generate a second offset based on a difference between the third position and the second position. The controller is further configured to generate a second adjusted center position based on the first adjusted center position and the second offset.

[0009] In other features, the controller is further configured to cause the robot arm to deliver the edge ring onto the edge ring lift pins and retrieve the edge ring from the edge ring lift pins based on the second adjusted center position and cause the optical sensor to sense a fourth position of the edge ring on the robot arm. The controller is further configured to generate a third offset based on a difference between the fourth position and the third position. The controller is further configured to compare the third offset to a predetermined offset.

[0010] In other features, the controller is further configured to determine if the edge ring is centered based on the comparison. The P grooves are "V" shaped. The P grooves are spaced at 360° / P intervals around a bottom surface of the edge ring. The P grooves are "V" shaped. A lowest portion of the P grooves extends in a radial direction.

[0011] Further areas of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for illustration purposes only and are not intended to limit the scope of the present disclosure.

[0012] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, in which: [Brief description of the drawings]

[0013] [Figure 1] FIG. 1 is a functional block diagram of an example plasma processing system according to the present disclosure.

[0014] [Diagram 2] FIG. 1 is a perspective view of an example of a processing chamber, a robot arm including an end effector, and an edge ring according to the present disclosure.

[0015] [Diagram 3]1 illustrates a cross-sectional view of an example of a substrate support and edge ring supported by lift pins in accordance with the present disclosure.

[0016] [Figure 4] FIG. 13 is a bottom view of an example edge ring including grooves according to the present disclosure.

[0017] [Diagram 5] 1 is a flowchart of an example method for centering an edge ring according to the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] In the drawings, reference numbers may be reused to identify similar and / or identical elements.

[0019] In some substrate systems, an edge ring may be used to shape the plasma and increase etch uniformity. As the edge ring erodes, the height of the edge ring may be adjusted by edge ring lift pins to maintain etch uniformity despite erosion. After processing multiple substrates, the edge ring is sufficiently worn away by the plasma.

[0020] Some substrate processing systems are capable of replacing the edge ring without breaking vacuum using a robotic arm that is normally used to deliver and remove the substrate to and from the processing chamber. Systems and methods according to the present disclosure can be used to precisely center the edge ring relative to the substrate support.

[0021] 1, an exemplary substrate processing system 100 is shown. The exemplary substrate processing system 100 may be used to perform etching and / or other types of substrate processing using RF plasma. The substrate processing system 100 includes a processing chamber 102 that encloses other components of the substrate processing system 100 and contains the RF plasma. The processing chamber 102 includes an upper electrode 104 and a substrate support 106, such as an electrostatic chuck (ESC). During operation, a substrate 108 is disposed on the substrate support 106. Although a particular substrate processing system 100 and processing chamber 102 are illustrated, the principles of the present disclosure may be applied to other types of substrate processing systems and chambers that use an edge ring, such as substrate processing systems that use remote plasma generation and delivery (e.g., using plasma tubes, microwave tubes).

[0022] The exemplary upper electrode 104 may include a gas distribution device, such as a showerhead 109, for introducing and distributing process gases. The showerhead 109 may include a stem portion including one end that is connected to the upper surface of the processing chamber. A base portion is generally cylindrical and extends radially outward from the opposite end of the stem portion at a location spaced from the upper surface of the processing chamber. The surface that faces the substrate, or faceplate of the base portion of the showerhead, includes a plurality of holes through which process or purge gases flow. Alternatively, the upper electrode 104 may include a conductive plate, and the process gases may be introduced in another manner.

[0023] The substrate support 106 includes a base plate 110 that is electrically conductive and acts as a bottom electrode. The base plate 110 supports a ceramic layer 112. In some examples, the ceramic layer 112 may incorporate a resistive heater, an RF electrode, and / or an electrostatic electrode (all not shown). An adhesion layer 114 may be disposed between the ceramic layer 112 and the base plate 110 and may act as a thermal resistance layer. The base plate 110 may include one or more coolant channels 116 for flowing coolant through the base plate 110.

[0024] The RF generating system 120 generates and outputs an RF voltage to one of the upper electrode 104 and the lower electrode (e.g., the base plate 110 of the substrate support 106). The other of the upper electrode 104 and the base plate 110 can be DC grounded, AC grounded, or floating. An exemplary RF generating system 120 can include an RF voltage generator 122 that generates an RF voltage, which is delivered to the upper electrode 104 or the base plate 110 by a matching and distribution network 124. Although the RF generating system 120 corresponds to a capacitively coupled plasma (CCP) system, the principles of the present disclosure can also be implemented in other suitable systems, such as, for example, a transformer coupled plasma (TCP) system, an inductively coupled plasma (ICP), a CCP cathode system, a remote microwave plasma generation and delivery system, etc.

[0025] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., 132-N (collectively gas sources 132), where N is an integer greater than zero. The gas sources 132 supply one or more process gases, inert gases, purge gases, etching gases, precursors, and / or other gas mixtures thereof. Vaporized precursors may also be used. The gas sources 132 are connected to a manifold 140 by valves 134-1, 134-2, ..., and 134-N (collectively valves 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively mass flow controllers 136). The output of the manifold 140 feeds the process chamber 102. By way of example only, the output of the manifold 140 feeds the showerhead 109.

[0026] The temperature controller 142 may be connected to a number of heating elements 144, such as thermal control elements (TCEs) disposed within the ceramic layer 112. For example, the heating elements 144 may include, but are not limited to, macro-heating elements corresponding to each zone in a multi-zone heater plate and / or an array of micro-heating elements disposed across multiple zones of a multi-zone heater plate. The temperature controller 142 may be used to control the number of heating elements 144 to control the temperature of the substrate support 106 and the substrate 108.

[0027] The temperature controller 142 may be in communication with the coolant assembly 146 to control the flow of coolant through the coolant passages 116. For example, the coolant assembly 146 may include a coolant pump and a reservoir. The temperature controller 142 operates the coolant assembly 146 to selectively flow coolant through the coolant passages 116 to cool the substrate support 106.

[0028] Valves 150 and pumps 152 may be used to evacuate reactants from the processing chamber 102. A system controller 160 may be used to control the components of the substrate processing system 100. A robot 170 may be used to deliver and remove substrates onto and from the substrate support 106. For example, the robot 170 may transfer substrates between the substrate support 106 and a load lock 172. Although shown as a separate controller, the temperature controller 142 may be implemented within the system controller 160. In some examples, a protective seal 176 may be provided around the periphery of the adhesion layer 114 between the ceramic layer 112 and the base plate 110.

[0029] The edge ring 180 surrounds the substrate support 106 during processing. The edge ring 180 is movable (e.g., vertically upward and downward) relative to the substrate support 106. For example, the edge ring 180 may be controlled by actuators and edge ring lift pins in response to the controller 160, as described in more detail below (see, e.g., FIG. 3). An optical sensor 182 may be used to measure the position of the edge ring 180 relative to the arm / end effector of the robot 170.

[0030] A calibrated center position of the edge ring relative to the substrate support may be initially determined using any suitable method. A suitable example of a calibration process is shown and described in U.S. Patent No. 10,541,768, entitled "Edge Ring Centering Method Using Ring Dynamic Alignment Data," issued on January 20, 2020, which is assigned to the assignee of the present application and is incorporated herein by reference in its entirety.

[0031] In the calibration process described in U.S. Patent No. 10,541,768, an edge ring includes a beveled surface and a lower edge ring includes a complementary beveled surface. When the beveled surfaces overlap, the edge ring has a tendency to move or slide until it sits flat on the substrate surface. As the edge ring moves due to the beveled surfaces, an optical sensor can be used to measure the change in position or offset. When the edge rings are not fully aligned, a non-zero offset value greater than a predetermined threshold occurs.

[0032] The calibration process is an iterative process in that the robot moves the edge ring across the substrate support in four orthogonal directions. An optical sensor measures the position of the edge ring on the end effector of the robot arm before and after each delivery and removal of the edge ring. The controller uses the change in position before and after placement to calculate an offset, and after a significant number of iterations, finally determines a calibrated center position. As will be appreciated, the calibration process typically takes periods of time longer than 12 hours to converge. Furthermore, the calibration process is repeated each time the edge ring is replaced, which reduces operation time and efficiency.

[0033] In some examples, a modified calibration process is used. During an initial calibration process according to the present disclosure, the edge ring is placed on the edge ring lift pins, and one or more shims are used to initially center the edge ring relative to one or more surrounding components, such as the middle edge ring or bottom edge ring. The shims are then removed. A robot end effector is used to remove the edge ring, and the position of the edge ring is determined by an optical sensor. The edge ring is then delivered in orthogonal directions around the center position, the position is measured, and an offset is calculated. Finally, a calibrated center position is determined based on the movements and offsets. Thus, a much shorter calibration process (with a limited number of delivery and removal iterations), as described below, can be used. In some examples, a replacement edge ring can be delivered and removed multiple times (e.g., 3-5 times), and the edge ring can be centered to within 30 μm of the calibrated center position in less than 15 minutes (which is significantly less than 12 hours).

[0034] 2, the processing chamber 102 includes an enclosure 210 that includes a top, sides, and a bottom. A chamber port 214 includes a door or opening 218 through which a substrate is delivered and removed. More specifically, a robot arm 234 having an end effector 232 delivers a substrate through the opening 218 onto a substrate support prior to substrate processing and removes the substrate from the substrate support after substrate processing. In some examples, the robot arm 234 can be part of a substrate transfer module that operates in a vacuum.

[0035] The robot arm 234 may also be used to deliver a new edge ring 220 to the processing chamber after removing the worn edge ring 220 from the processing chamber through the chamber port 214. The robot arm 234 includes one or more end effectors 232 (end effectors 232-1 and 232-2 are shown). In FIG. 2, the edge ring 220 is disposed on the end effector 232-1. In some examples, an optical sensor 240 is disposed adjacent the opening 218 of the chamber port 214 to sense the position of the edge ring on the end effector, although other locations inside or outside the chamber may be used.

[0036] As described further below, the robot arm 234 first places the edge ring 220 on the edge ring lift pins using a calibrated center position and / or a previous center position (see, e.g., FIG. 4). The edge ring 220 includes grooves that align with the edge ring lift pins (see FIGS. 3 and 4). In some examples, the number of grooves is equal to or greater than the number of edge ring lift pins. The edge ring 220 may move from the placement position after the robot arm delivers the edge ring 220 onto the edge ring lift pins. In other words, the edge ring 220 may move from the placement position as the edge ring 220 is placed on the edge ring lift pins.

[0037] After the edge ring 220 is placed, the robot arm 234 lifts the edge ring 220 and uses an optical sensor to measure the new position of the edge ring 220 on the robot arm 234. The controller calculates the offset (the difference between the previous position of the edge ring and the new position of the edge ring).

[0038] The centered position of the edge ring is adjusted based on the offset and the previous center position (to remove the offset). In other words, the center position is adjusted in a direction opposite to the offset to remove the offset. With the new center position (based on the previous center position and offset), the robot arm 234 places the grooves of the edge ring 220 onto the edge ring lift pins. In some examples, the process is repeated Q times, where Q is an integer. In some examples, a relatively small number of iterations may be performed. In some examples, Q<10. In other examples, Q=3 or Q=5.

[0039] After Q iterations, a final offset value is determined and compared to an offset threshold value, and if the final offset value is less than or equal to the offset threshold value corresponding to the center position, the edge ring is deemed to be properly centered and the substrate processing chamber can proceed with substrate processing.

[0040] If the final offset value is greater than the threshold, the edge ring is not considered properly centered. If the offset is greater than the threshold, the photosensor may be out of calibration and / or one or more of the grooves on the bottom surface of the edge ring may not be in proper contact with one or more of the corresponding edge ring lift pins.

[0041] 3, the substrate support 320 is shown to include a first layer 330, an adhesion layer 332, and a base plate 334. In some examples, the first layer 330 is made of ceramic and includes an electrostatic electrode, an RF electrode, and / or a heating element. A lower edge ring 336 is disposed radially outward of the base plate 334 and at least partially radially outward of the edge ring 220. The edge ring 220 is disposed on edge ring lift pins 340 that extend into grooves 350 located in a bottom surface of the edge ring 220. The edge ring lift pins 340 support the edge ring 220 and are received by the grooves 350.

[0042] 4, the edge ring 220 includes an annular body 410 and a plurality of grooves 350-1, 350-2, ..., and 350-P (P is an integer equal to or greater than 2) located on a bottom surface of the edge ring 220. In some examples, the grooves 350 define a cavity having a "V" shape. In some examples, the edge ring 220 includes P grooves 350 azimuthally spaced 360° / P apart. In some examples, the lowest portions or slots of the plurality of grooves 350-1, 350-2, ..., and 350-P extend generally parallel to the top surface of the substrate support when the annular body of the edge ring is placed parallel to the top surface of the substrate support. The lowest portions of the plurality of grooves 350-1, 350-2, ..., and 350-P extend radially relative to the center of the edge ring.

[0043] 5, a method 500 for centering an edge ring is shown. At 510, the edge ring center position is calibrated. In some examples, the calibration method described above is used, although other types of calibrations may be used. At 512, Q is set equal to zero. At 514, the edge ring position is measured on the end effector of the robot. At 516, the edge ring is placed on the edge ring lift pins (with the edge ring lift pins in the grooves) with the end effector of the robot arm. The robot arm releases the edge ring, allowing the edge ring to seat itself on the edge ring lift pins.

[0044] At 518, the edge ring is removed using the robot. At 522, the position of the edge ring is determined using an optical sensor and an offset from a calibrated edge ring center position or a previous edge ring center position is calculated. At 526, the offset is applied to the center position. In other words, to adjust the center position and to remove the offset, the robot arm is moved in a direction opposite to the offset. At 530, Q is set equal to Q+1.

[0045] At 534, the method determines whether Q=M, where Q and M are integers. In some examples, M is 2 or more (e.g., 3, 5, etc.). If 534 determines false, the method returns to 514 and repeats. If 534 determines true, the method proceeds to 538 and determines the final offset value (Offset last ) is the offset threshold (Offset TH) or less. If it is determined to be true at 538, the offset is within the predetermined threshold and the edge ring is deemed to be centered at 544. If it is determined to be false at 538, the offset is greater than the predetermined threshold and an error occurs at 542 and the edge ring is not deemed to be centered. In some examples, the substrate processing system may be shut down to allow further diagnosis of the edge ring centering problem.

[0046] As can be appreciated, the edge ring centering systems described herein are capable of repeatedly positioning the edge ring on the edge ring lift pins with high precision within a relatively short period of time. In some examples, the edge ring centering systems are capable of positioning the edge ring to within 30 μm (and 3 sigma of 15 μm) within 15 minutes per chamber, per substrate transfer module arm.

[0047] The above description is merely exemplary in nature and in no way limits the disclosure, its applications, or uses. The broad teachings of the disclosure may be implemented in a variety of forms. Thus, the disclosure includes specific examples, as other variations will become apparent from a study of the drawings, specifications, and the appended claims, and the true scope of the disclosure is not so limited. It should be understood that one or more steps in a method may be performed in a different order (or in parallel) without altering the principles of the disclosure. Furthermore, although each of the embodiments is described above as having certain features, any one or more of those features described with respect to any embodiment of the disclosure may be implemented in the features of any of the other embodiments and / or combined with them, even if the combination is not explicitly stated. In other words, the described embodiments are not mutually exclusive, and substitution of one or more embodiments for one another remains within the scope of the disclosure.

[0048] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms, including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless expressly stated to be "direct," when a relationship between a first and second element is described in the above disclosure, the relationship can be a direct relationship with no other intervening elements between the first and second elements, but may also be an indirect relationship (spatial or functional) with one or more intervening elements between the first and second elements. As used herein, the phrase at least one of A, B, and C should be interpreted as meaning the logic (A OR B OR C) with a non-exclusive logical OR, and not as meaning at least one of A, at least one of B, and at least one of C.

[0049] In some implementations, the controller is part of a system, which may be part of the examples described above. Such a system may comprise semiconductor processing equipment, including one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (substrate pedestal, gas flow system, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after the processing of the semiconductor substrate or substrates. The electronics may be referred to as a "controller," which may control various components or subparts of the system or systems. Depending on the processing requirements and / or type of system, the controller may be programmed to control any of the processes disclosed herein, including delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow settings, fluid delivery settings, positional and operational settings, substrate transfer into and out of tools and other transfer tools and / or load locks connected or interfaced to the particular system.

[0050] Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software to receive instructions, issue instructions, control operations, enable cleaning operations, enable end point measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute the program instructions (e.g., software). Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files) that define operational parameters for carrying out a particular process on or for a semiconductor substrate or system. The operational parameters may, in some embodiments, be part of a recipe defined by a process engineer to accomplish one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or die of the substrate.

[0051] The controller, in some implementations, can be part of or coupled to a computer that is integrated into the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can reside in the "cloud," or in all or part of a fab host computer system, which can enable remote access of substrate processing. The computer can enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance metrics from multiple manufacturing operations, change parameters of a current process, set processing steps following a current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network, which can include a local network or the Internet. The remote computer can include a user interface, which allows for entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool with which the controller is configured to interface or control. Thus, as described above, the controller can be distributed, such as by having one or more individual controllers networked together and working toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such purposes would be one or more integrated circuits on the chamber that communicate with one or more remotely located integrated circuits (such as at the platform level or as part of a remote computer) that together control the process on the chamber.

[0052] Without limitation, example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a cleaning chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system associated with or usable in the manufacturing and / or production of semiconductor substrates.

[0053] As described above, depending on the process step or steps to be performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, other controllers, or tools used in material transport to bring containers of substrates to or from tool locations and / or load ports within a semiconductor production factory.

Claims

1. 1. An edge ring centering system for a plasma processing system, comprising: a processing chamber including a substrate support and R edge ring lift pins, R being an integer greater than or equal to 3; an edge ring including P grooves located on a bottom surface thereof, P being an integer equal to or greater than R; a robot arm including an end effector; An optical sensor; a controller configured to perform an initial calibration to determine a calibrated center position for the edge ring; Equipped with The controller is configured to perform M iterations of a centering process after performing the initial calibration, where M is an integer greater than or equal to 2, and each of the M iterations comprises: causing the optical sensor to sense a first position of the edge ring on the end effector; causing the robot arm to deliver the edge ring to at least one of the calibrated first center position and a final adjusted center position on the R edge ring lift pins; removing the edge ring from the R edge ring lift pins; causing the optical sensor to sense a second position of the edge ring on the end effector; determining an offset based on the first position and the second position; Based on the at least one of the calibrated center position and the last adjusted center position, apply the offset to the robot arm in a direction opposite to the offset to adjust the current position of the edge ring to the adjusted center position. Including an edge ring centering system.

2. 2. The edge ring centering system of claim 1, wherein the controller is configured to generate the adjusted center position for the edge ring based on the calibrated center position and the offset.

3. 3. The edge ring centering system of claim 2, wherein the controller further comprises: causing the robot arm to deliver the edge ring onto the R edge ring lift pins based on the adjusted center position; removing the edge ring from the R edge ring lift pins; causing the optical sensor to detect the second position of the edge ring on the robot arm. The edge ring centering system consists of:

4. 4. The edge ring centering system of claim 3, wherein the controller is configured to update the offset based on a difference between the first position and the second position during one of the M iterations of the centering process.

5. 5. The edge ring centering system of claim 4, wherein the controller is configured to generate the adjusted center position during the one iteration of the centering process based on the adjusted center position and the updated offset determined during a previous iteration of the centering process.

6. 2. The edge ring centering system of claim 1, wherein the controller is further configured to compare a resulting offset after performing the M iterations of the centering process to a predetermined offset.

7. 7. The system for centering an edge ring of claim 6, wherein the controller is further configured to determine whether the edge ring is centered based on the comparison.

8. 2. The edge ring centering system of claim 1, wherein the P grooves are "V" shaped.

9. 2. The edge ring centering system of claim 1, wherein the P grooves are spaced at 360° / P intervals around the bottom surface of the edge ring.

10. 2. The edge ring centering system of claim 1, wherein the P grooves are "V" shaped and a lowest portion of the P grooves extends in a radial direction.

11. 2. The edge ring centering system of claim 1, wherein the controller causes the robot arm to send the edge ring to the calibrated center position for a first iteration of the M iterations and to the final adjusted center position for subsequent iterations of the M iterations.

12. 2. The edge ring centering system of claim 1, wherein the controller: determining whether the offset for the Mth iteration is less than a predetermined threshold; determining that the edge ring is centered in response to the offset for the Mth iteration being less than the predetermined threshold; determining that an error occurs by centering the edge ring in response to the offset for the Mth iteration being greater than or equal to the predetermined threshold; The edge ring centering system is configured as follows:

13. 2. The edge ring centering system of claim 1 , wherein the controller is configured to perform the centering process on a replacement edge ring based on the calibrated center position of the edge ring.

14. 2. The edge ring centering system of claim 1, wherein the controller: avoiding lifting the edge ring until the edge ring is seated on the R edge ring lift pins; After the edge ring is placed on the R edge ring lift pins, the robot arm removes the edge ring from the R edge ring lift pins. The edge ring centering system is configured as follows:

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