Method and apparatus for processing a substrate - Patents.com

Abstract

Methods and apparatuses for processing a substrate are provided herein. For example, an apparatus for processing a substrate includes a top-feed gas nozzle configured to direct process gas toward a substrate support surface of a substrate support, a side-feed gas nozzle configured to direct process gas toward a side surface of the substrate support, a first gas line connected to the top-feed gas nozzle, a second gas line connected to the side-feed gas nozzle, and a plurality of valves connected to the first gas line and the second gas line for providing process gas to a processing space of a processing chamber, and at least one of a first orifice flow restrictor or a first needle valve connected to the first gas line, or a second orifice flow restrictor or a second needle valve connected to the second gas line.

Description

[Technical field]

[0001] TECHNICAL FIELD

[0001] Embodiments of the present disclosure relate generally to methods and apparatus for processing a substrate, and more particularly to methods and apparatus configured to manage process gas flow to a processing space of a processing chamber during operation. [Background technology]

[0002]

[0002] A plasma processing apparatus is known that includes a plasma processing chamber, a gas source that supplies a process gas into the processing chamber, and an energy source that generates a plasma from the process gas. For example, the plasma processing can include one or more plasma deposition processes (e.g., physical vapor deposition, chemical vapor deposition, atomic layer deposition, etc.), one or more plasma etching processes, or one or more other plasma processes. Typically, during plasma processing, one or more process gases are introduced into the processing space of the processing chamber. For example, for a plasma etching process, multiple process gases, such as octafluorocyclobutane (C4F8), oxygen (O2), sulfur hexafluoride (SF6), etc., can be introduced into the processing chamber using a fast switching process during an etching cycle. However, such a process can be quite expensive because multiple fast response time atomic layer deposition (ALD) valves are required to achieve fast switching between process gases while maintaining required flow parameters, such as uniform mass flow rate and pressure, during fast switching. Summary of the Invention

[0003]

[0003] A method and an apparatus for processing a substrate are provided herein. In some embodiments, the apparatus for processing a substrate includes a processing chamber having a chamber body and a lid, a top-feed gas nozzle extending through the lid and configured to direct a process gas toward a substrate support surface of a substrate support disposed in a processing space of the processing chamber, a side-feed gas nozzle extending through the chamber body and configured to direct a process gas toward a side surface of the substrate support, a first gas line connected to the top-feed gas nozzle, a second gas line connected to the side-feed gas nozzle, and a plurality of valves connected to the first gas line and the second gas line for providing a process gas to the processing space of the processing chamber, and at least one of a first orifice flow restrictor or a first needle valve connected to the first gas line, or a second orifice flow restrictor or a second needle valve connected to the second gas line.

[0004]

[0004] According to at least some embodiments, a method for processing a substrate includes supplying a process gas to a processing space of a process chamber via a first gas line connected to a top supply gas nozzle, a second gas line connected to a side supply gas nozzle, and a plurality of valves connected to the first gas line and the second gas line, and controlling a gas flow rate of the process gas through at least one of the top supply gas nozzle or the side supply gas nozzle via at least one of a first orifice flow restrictor or a first needle valve connected to the first gas line, or a second orifice flow restrictor or a second needle valve connected to the second gas line.

[0005]

[0005] Other and further embodiments of the present disclosure are described below.

[0006]

[0006] The embodiments of the present disclosure, briefly summarized above and described in more detail below, can be understood by reference to the exemplary embodiments of the present disclosure illustrated in the accompanying drawings. However, since the present disclosure may admit of other equally effective embodiments, the accompanying drawings depict only typical embodiments of the present disclosure and therefore should not be considered as limiting the scope. [Brief description of the drawings]

[0007] [Figure 1] 1 is a schematic cross-sectional view of a processing chamber suitable for etching in accordance with at least some embodiments of the present disclosure. [Diagram 2]

[0008] FIG. 1 is a schematic diagram of a gas flow supply system according to at least some embodiments of the present disclosure. [Diagram 3]

[0009] FIG. 1 is a schematic diagram of a gas flow supply system according to at least some embodiments of the present disclosure. [Figure 4]

[0010] FIG. 1 is a schematic diagram of a gas flow supply system according to at least some embodiments of the present disclosure. [Diagram 5]

[0011] FIG. 1 is a schematic diagram of a gas flow supply system according to at least some embodiments of the present disclosure. [Figure 6]

[0012] FIG. 1 is a schematic diagram of a gas flow supply system according to at least some embodiments of the present disclosure. [Figure 7]

[0013] FIG. 1 is a schematic diagram of a gas flow supply system according to at least some embodiments of the present disclosure. [Figure 8]

[0014] FIG. 1 is a schematic diagram of a gas flow supply system according to at least some embodiments of the present disclosure. [Figure 9]

[0015] 1 is a flowchart of a method for processing a substrate in accordance with at least some embodiments of the present disclosure. [Figure 10]

[0016] 10A-10C are diagrams of processing zones of a processed substrate in accordance with at least some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008]

[0017] To facilitate understanding, the same reference numbers have been used, where possible, to designate identical elements common to the figures. The figures are not to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

[0009]

[0018] Provided herein are embodiments of methods and apparatuses configured to manage process gas flow to a processing space of a processing chamber during operation. For example, in at least some embodiments, the apparatus may include a top feed gas nozzle, a side feed gas nozzle, and one or more orifice flow restrictors and / or needle valves connected to one or more separate gas lines connecting the top feed gas nozzle and the side feed gas nozzle. The methods and apparatuses described herein use a reduced number of fast response time ALD valves when compared to conventional methods and apparatuses while effectively managing process gas flow parameters such as uniform mass flow rate and pressure to different sections of the processing space during fast switching, thus providing a more cost-effective way to perform fast switching during operation.

[0010]

[0019] 1 is a cross-sectional view of one embodiment of a processing chamber 100 suitable for performing an etching process according to the present disclosure. Suitable processing chambers that may be adapted for use with the teachings disclosed herein include, for example, processing chambers available from Applied Materials, Inc. of Santa Clara, Calif. Other processing chambers (PVD, CVD, ALD, etc.) may also be adapted to benefit from one or more of the methods of the present disclosure.

[0011]

[0020] The processing chamber 100 includes a chamber body 102 and a lid 104 that enclose a processing space 106. The chamber body 102 is typically fabricated from aluminum, stainless steel, or other suitable materials. The chamber body 102 generally includes a sidewall 108 and a bottom 110. A substrate support access port (not shown) is generally defined in the sidewall 108 and selectively sealed by a slit valve to facilitate movement of the substrate 103 into and out of the processing chamber 100. An exhaust port 126 is defined in the chamber body 102 to couple the processing space 106 to a pumping system 128, which also functions as a purge station. The pumping system 128 generally includes one or more pumps and a throttle valve that are utilized to evacuate the processing space 106 of the processing chamber 100 and adjust the pressure of the processing space 106. In some embodiments, the pump system 128 is configured to maintain the pressure inside the processing space 106 at an operating pressure, typically between about 1 mTorr and about 500 mTorr, between about 5 mTorr and about 100 mTorr, or between about 5 mTorr and about 50 mTorr, depending on the needs of the process.

[0012]

[0021] In some embodiments, the processing chamber 100 may utilize capacitively coupled RF energy for plasma processing, or in some embodiments, the processing chamber 100 may use inductively coupled RF energy for plasma processing. In some embodiments, a remote plasma source 177 may be optionally coupled to the gas panel to facilitate dissociating the gas mixture from the remote plasma before entering the processing space 106 for processing. In some embodiments, RF source power 143 is coupled to the showerhead assembly 130 via a matching network 141. The RF source power 143 can typically be generated up to about 5000 W, for example, between about 200 W and about 5000 W, or between 1000 W and 3000 W, or about 1500 W, optionally at a tunable frequency within a range of about 50 kHz to about 200 MHz.

[0013]

[0022] In some embodiments, a gas panel 158 is coupled to the process chamber 100 and includes one or more mass flow controllers 157 to provide one or more process gases and / or cleaning gases to the process space 106. In one embodiment depicted in FIG. 1, inlet ports 132′, 132″, 132′″ are provided in the lid 104 to allow gases to be delivered from the gas panel 158 to the process space 106 of the process chamber 100. In some embodiments, the gas panel 158 is adapted to provide an inert gas, such as oxygen (O2), argon or helium (or other noble gas), or a mixture of gases, such as carbon tetrafluoride (CF4), octafluorocyclobutane or perfluorocyclobutane (C4F8), trifluoromethane (CHF3), sulfur hexafluoride (SF6), silicon tetrafluoride or tetrafluorosilane (SiF4), into the interior space 106 of the process chamber 100 through the inlet ports 132′, 132″, 132′″. In at least some embodiments, the process gas provided from the gas panel 158 includes at least one process gas including an oxidizer, such as oxygen gas. In some embodiments, the process gas including the oxidizer may further include an inert gas, such as argon or helium. In some embodiments, the process gas includes a reducing agent, such as hydrogen, and may be mixed with an inert gas, such as argon, or other gases, such as nitrogen or helium. In some embodiments, chlorine gas may be provided alone or in combination with at least one of an inert gas, such as nitrogen, helium, argon, etc. Non-limiting examples of oxygen-containing gases include one or more of O2, carbon dioxide (CO2), H2O, nitrous oxide (N2O), nitrogen dioxide (NO2), ozone (O3), etc. Non-limiting examples of nitrogen-containing gases include N2, ammonia (NH3), etc. Non-limiting examples of chlorine-containing gases include hydrogen chloride (HCl), chlorine (Cl2), carbon tetrachloride (CCl4), etc. In some embodiments, a showerhead assembly 130 is coupled to the inner surface 114 of the lid 104. The showerhead assembly 130 includes a plurality of apertures.The multiple apertures allow gas to flow from inlet ports 132', 132", 132" through the showerhead assembly 130 and into the processing space 106 of the processing chamber 100 in a predetermined distribution across a surface (e.g., center, middle, side) of the substrate 103 being processed in the processing chamber 100.

[0014]

[0023] In one embodiment, the showerhead assembly 130 is configured to have multiple zones. The multiple zones allow for individual control of gas flow into the process space 106 of the processing chamber 100. In one example shown in FIG. 1, the showerhead assembly 130 includes a top-feed gas nozzle 135 configured to direct process gas toward the substrate support surface of the substrate support 148. Thus, the top-feed gas nozzle 135 includes a central outlet 134 configured for central flow control and an intermediate outlet 136 configured for intermediate flow control separately coupled to the gas panel 158 via corresponding inlet ports 132′, 132″. Additionally, one or more side-feed gas nozzles may extend through the chamber body 102 and be configured to direct process gas toward a side of the substrate support 148. For example, in at least some embodiments, the side-feed gas nozzle 133 may include a side outlet 137 configured for side flow control separately coupled to the gas panel 158 via inlet port 132′″. Unlike the central outlet 134 and intermediate outlets 136 disposed on the lid 104, the side outlets 137 are disposed along the interior of the sidewall 108 of the processing chamber in a generally circular manner. The central outlet 134 and intermediate outlets 136 are configured to provide process gas to substantially etch a central zone and an intermediate zone (e.g., between the center and the edge) of the substrate. The side outlets 137 disposed along are configured to provide process gas to substantially etch an edge area (or periphery) of the substrate, as will be described in more detail below.

[0015]

[0024] In some embodiments, a substrate support 148 is disposed within the process space 106 of the processing chamber 100 below a gas distribution assembly, such as the showerhead assembly 130. The substrate support 148 holds the substrate 103 during processing. The substrate support 148 generally includes a number of lift pins (not shown) disposed therethrough. The multiple lift pins are configured to lift the substrate 103 from the substrate support 148 and facilitate replacement of the substrate 103 by a robot (not shown) in a conventional manner. An inner liner 118 may surround the substrate support 148 near a periphery.

[0016]

[0025] In one embodiment, the substrate support 148 includes a mounting plate 162, a base 164, and an electrostatic chuck 166. The mounting plate 162 is coupled to the lower portion 110 of the chamber body 102 and includes passages for directing utilities (such as fluids, power lines, and sensor leads, among others) to the base 164 and the electrostatic chuck 166. The electrostatic chuck 166 includes a clamping electrode 180 for holding the substrate 103 below the showerhead assembly 130. The electrostatic chuck 166 is driven by a chuck power supply 182 as is known in the art to generate an electrostatic force that holds the substrate 103 to the chuck surface. Alternatively, the substrate 103 may be held to the substrate support 148 by clamps, vacuum, or gravity.

[0017]

[0026] The base 164 or the electrostatic chuck 166 may include a heater 176 (e.g., at least one optional embedded heater), at least one optional embedded isolator 174, and a number of conduits 168, 170 to control a lateral temperature profile of the substrate support 148. The multiple conduits 168, 170 are fluidly coupled to a fluid source 172 that circulates a temperature conditioning fluid through the conduits. The heater 176 is regulated by a power source 178. The multiple conduits 168, 170 and the heater 176 are utilized to control the temperature of the base 164, heat and / or cool the electrostatic chuck 166, and ultimately control the temperature profile of the substrate 103 disposed thereon. The temperatures of the electrostatic chuck 166 and the base 164 may be monitored using a number of temperature sensors 190, 192. The electrostatic chuck 166 may further include a number of gas passages (not shown), such as grooves. A number of gas passages are formed in the pedestal support surface of the substrate support of the electrostatic chuck 166 and are fluidly coupled to a source of heat transfer (or backside) gas, such as helium (He). In operation, a backside gas is provided at a controlled pressure in the gas passages to enhance heat transfer between the electrostatic chuck 166 and the substrate 103. In some embodiments, the temperature of the substrate may be maintained at a temperature between 20 degrees Celsius and 450 degrees Celsius, e.g., between 100 degrees Celsius and 300 degrees Celsius, or between 150 degrees Celsius and 250 degrees Celsius.

[0018]

[0027] In one embodiment, the substrate support 148 includes a clamping electrode 180 configured as a cathode and coupled to an RF bias power supply 184 and an RF bias power supply 186. The RF bias power supply 184 and the RF bias power supply 186 are coupled between the clamping electrode 180 disposed within the substrate support 148 and another electrode, such as the showerhead assembly 130 or the chamber body 102 (or the lid 104). The RF bias power excites gases disposed within the processing region of the chamber body 102 to sustain a plasma discharge generated from the gases.

[0019]

[0028] Still referring to FIG. 1, in some embodiments, an RF bias power supply 184 and an RF bias power supply 186 are coupled to a clamp electrode 180 disposed in the substrate support 148 through a matching network 188. Signals generated by the RF bias power supply 184 and the RF bias power supply 186 are fed through signal feed lines to the substrate support 148 through the matching network 188 to ionize a gas mixture provided in a plasma processing chamber, such as the processing chamber 100, and thus provide the ion energy required to perform an etching deposition or other plasma enhanced process. The RF bias power supply 184 and the RF bias power supply 186 can generally generate RF signals having a frequency of about 50 kHz to about 200 MHz and a power between about 0 watts and about 500 watts, 1 watt (W) to about 100 W, or about 1 W to about 30 W. An additional bias power 189 may be coupled to the clamp electrode 180 to control the characteristics of the plasma.

[0020]

[0029] A controller 150 is coupled to the processing chamber 100 to control the operation of the processing chamber 100. The controller 150 includes a central processing unit 152, a memory 154 (e.g., a non-transitory computer readable storage medium), and support circuits 156, which are utilized to control process sequences and regulate gas flows from a gas panel 158. The central processing unit 152 may be any form of general-purpose computer processor that may be used in an industrial setting. Software routines (e.g., stored executable instruction instructions) may be stored in the memory 154, such as random access memory, read-only memory, floppy or hard disk drive, or other form of digital storage. The support circuits 156 are conventionally coupled to the central processing unit 152 and may include cache, clock circuits, input / output systems, power supplies, etc. Bidirectional communication between the controller 150 and the various components of the processing chamber 100 is handled via numerous signal cables.

[0021]

[0030] 2 is a schematic diagram of a gas flow supply system 200 according to at least some embodiments of the present disclosure. For example, the gas flow supply system 200 is configured for use with the gas panel 158 of the processing chamber 100. As described above, the gas panel 158 includes the top-feed gas nozzle 135 including the central outlet 134 and the intermediate outlet 136, and the side-feed gas nozzle 133 including the side outlets 137. For illustrative purposes, the eight side outlets 137 of the side-feed gas nozzle 133 are shown aligned along a vertical axis. However, as described above, in an assembled configuration, the eight side outlets 137 may be generally arranged in a generally circular manner along the interior of the sidewall 108 (e.g., surrounding the substrate support 148).

[0022]

[0031] The first gas line 202 is connected to the top feed gas nozzle 135, and the second gas line 204 is connected to the side feed gas nozzle 133. The first gas line 202 and the second gas line 204 are also connected to each other via a third gas line 203 at a location before the process gas enters a first orifice flow restrictor 206 (or a first needle valve) connected to the first gas line 202 or a second orifice flow restrictor 208 (or a second needle valve) connected to the second gas line 204. The first orifice flow restrictor 206 and the second orifice flow restrictor 208 are configured to limit or maintain the flow rate of the process gas to a predetermined flow rate. For example, the predetermined flow rate can be about 300 sccm to about 3000 sccm. Additionally, the first orifice flow restrictor 206 and the second orifice flow restrictor 208 are set to predetermined flow rates and cannot be adjusted in-situ, for example, during operation.

[0023]

[0032] Further, a plurality of valves 201 (e.g., fast-closing valves) are connected to the first gas line 202 and the second gas line 204 for providing process gas to the processing space 106 of the processing chamber 100. For example, in at least some embodiments, the plurality of valves 201 may include four connected valves. The four connected valves may include a first pair of valves 207 and a second pair of valves 209. Each of the first pair of valves 207 and the second pair of valves 209 includes a valve having an output connected to the first gas line 202 and the second gas line 204, and a valve having an output connected to the purge gas line 210. Further, each valve of the first pair of valves 207 and the second pair of valves 209 has an input connected to one or more mass flow controllers 157. The valves of the first pair of valves 207 and the second pair of valves 209 may be the same as each other or may be different from each other.

[0024]

[0033] One or more additional valves may also be provided. For example, in at least some embodiments, valves 211 and 213 may be connected to mass flow controller 157 and provided in first gas line 202 and second gas line 204, respectively. Valves 211 and 213 may be configured to control the admission of other types of process gases that do not require fast switching.

[0025]

[0034] A purge line 210 may be connected to at least one of the inputs or outputs of the plurality of valves 201 and configured to purge process gas from the first gas line 202 and the second gas line 204. For example, with respect to Figure 2, the purge gas 210 is connected to the output of each of the first pair of valves 207 and the second pair of valves 209, as described above. Other connection configurations for the purge line 210 are described in more detail below.

[0026]

[0035] For example, Figure 3 is a schematic diagram of a gas flow supply system 200 in accordance with at least some embodiments of the present disclosure. The gas flow supply system 200 of Figure 3 is substantially identical to that of Figure 2. Thus, only those features of the gas flow supply system 200 that are unique to Figure 3 will be described herein.

[0027]

[0036] For example, in FIG. 3, a purge line 210 is connected to the output of each of the first pair of valves 207 and the second pair of valves 209, and is also connected to the input of each of the first pair of valves 207 and the second pair of valves 209.

[0028]

[0037] 3, one or more mass flow meters are sized (e.g., ¼ inch or greater) to be connected to the first gas line 202 and / or the second gas line 204. For example, a first mass flow meter 314 and a second mass flow meter 316 are connected to the first gas line 202 and the second gas line 204, respectively. The first mass flow meter 314 and the second mass flow meter 316 are connected, for example, after the first orifice flow restrictor 206 and the second orifice flow restrictor 208, adjacent the top feed gas nozzle 135 and the side feed gas nozzle 133. The first mass flow meter 314 and the second mass flow meter 316 are configured to measure the flow rate of the process gas therethrough, respectively, and transmit the measured flow rate to the controller 150. The controller 150 can, in turn, adjust the mass flow controller 157 based on the measured flow rate.

[0029]

[0038] Figure 4 is a schematic diagram of a gas flow supply system 200 in accordance with at least some embodiments of the present disclosure. The gas flow supply system 200 of Figure 4 is substantially identical to that of Figures 2 and 3. Thus, only those features of the gas flow supply system 200 that are unique to Figure 4 will be described herein.

[0030]

[0039] For example, in Figure 4, as described above, one or more of the orifice flow restrictors described above may be replaced with one or more needle valves. For example, in Figure 4, one or both of the first orifice flow restrictor 206 and the second orifice flow restrictor 208 may be replaced with a respective needle valve. For example, as shown in Figure 4, both the first orifice flow restrictor 206 and the second orifice flow restrictor 208 may be replaced with a first needle valve 406 and a second needle valve 408, respectively. Alternatively, any combination of orifice flow restrictors and additional needle valves may be used.

[0031]

[0040] Figure 5 is a schematic diagram of a gas flow supply system 200, according to at least some embodiments of the present disclosure. The gas flow supply system 200 of Figure 5 is similar to that of gas flow supply system 200. Therefore, only those features of gas flow supply system 200 that are unique to Figure 5 will be described herein.

[0032]

[0041] For example, in FIG. 5, unlike the first pair of valves 207 and the second pair of valves 209, which are comprised of valves having inputs connected to mass flow controller 157 and outputs connected to purge line 210, purge line 210 is directly connected to one or more mass flow controllers (e.g., mass flow controller 157). That is, the purge gas (e.g., dump) flows through orifice flow restrictor 502, thus providing a higher flow resistance to the purge gas and reducing the number of valves that would normally be required. Thus, in at least some embodiments, instead of having a first pair of valves 207 and a second pair of valves 209, gas flow supply system 200 comprises a first valve 507 and a second valve 509. Each of first valve 507 and second valve 509 has an input connected to one or more mass flow controllers (e.g., mass flow controller 157) and an output connected to first gas line 202 and second gas line 204.

[0033]

[0042] 5, one or more of an orifice flow restrictor or needle valve and a mass flow meter may be connected to the first gas line and / or the second gas line. For example, in at least some embodiments, the first gas line 202 and the second gas line 204 may each include one or more orifice flow restrictors / needle valves and mass flow meters. For example, in the illustrated embodiment, a first needle valve 406 and a first mass flow meter 314 are shown connected to the first gas line 202.

[0034]

[0043] Figure 6 is a schematic diagram of a gas flow supply system 200 according to at least some embodiments of the present disclosure. The gas flow supply system 200 of Figure 6 is similar to previously described gas flow supply systems. Thus, only those features of the gas flow supply system 200 that are unique to Figure 6 will be described herein.

[0035]

[0044] 6 uses a common dump valve for the center flow and the edge flow, thus reducing the number of valves required. For example, valve 612 and valve 614 are connected to the purge line 210. Furthermore, unlike the previously described gas flow supply system 200, the first gas line 202 and the second gas line 204 of the gas flow supply system 200 of FIG. 6 are not connected to each other via the third gas line 203. For example, the gas flow supply system 200 of FIG. 6 includes a first VCR fitting 607, a second VCR fitting 608, a third VCR fitting 609, and a fourth VCR fitting 610. The first VCR fitting 607 and the second VCR fitting 608 are connected to each other, to the mass flow controller 157, and to the first gas line 202 to provide process gas to the upper feed gas nozzle 135. Similarly, the third VCR fitting 609 and the fourth VCR fitting 610 are connected to each other, to the mass flow controller 157, and to the second gas line 204 to provide process gas to the side-feed gas nozzle 133, so that a third gas line is not required.

[0036]

[0045] Figures 7 and 8 are schematic diagrams of a gas flow supply system 200 in accordance with at least some embodiments of the present disclosure. The gas flow supply system 200 of Figures 7 and 8 is similar to previously described gas flow supply systems. Thus, only those features of the gas flow supply system 200 that are unique to Figures 7 and 8 will be described herein.

[0037]

[0046] The gas flow supply system 200 of Figures 7 and 8 can provide different flow ratio distribution of process gas to the top-feed gas nozzles 135 and the side-feed gas nozzles 133. For example, the first gas line 202 and the second gas line 204 are connected in parallel to the output of at least one of a plurality of valves (e.g., the first pair of valves 207 and the second pair of valves 209). Thus, the first pair of valves 207 and the second pair of valves 209 each include a valve having a split output with one or more orifice flow restrictors or needle valves connected to the first gas line 202 and the second gas line 204. For example, with reference to Figure 7, the valve 703 has a split output that connects to an orifice flow restrictor or needle valve 702 (needle valve shown) connected to the first gas line 202 and an orifice flow restrictor or needle valve 704 (needle valve shown) connected to the second gas line 204. Similarly, valve 705 has split outputs that connect to an orifice flow restrictor or needle valve 706 (needle valve shown) connected to the first gas line 202 and an orifice flow restrictor or needle valve 708 (needle valve shown) connected to the second gas line 204.

[0038]

[0047] 8, valve 803 has a split output that connects to either an orifice flow restrictor or needle valve 802 (needle valve shown) connected to the first gas line 202 or an orifice flow restrictor or needle valve connected to the second gas line 204. For illustrative purposes, needle valve 802 is shown connected to the first gas line 202. Similarly, valve 805 has a split output that connects to either an orifice flow restrictor or needle valve 804 (needle valve shown) connected to the first gas line 202 or an orifice flow restrictor or needle valve 804 (needle valve shown) connected to the second gas line 204. For illustrative purposes, needle valve 804 is shown connected to the second gas line 204.

[0039]

[0048] 7 and 8, each of the first pair of valves 207 and the second pair of valves 209 includes a valve having an output connected to a purge line 210. Additionally, each of the first pair of valves 207 and the second pair of valves 209 has an input connected to one or more mass flow controllers 157.

[0040]

[0049] 9 is a flowchart of a method 900 for processing a substrate, in accordance with at least some embodiments of the present disclosure. For example, in at least some embodiments, the method 900 may be used during one or more plasma processes, such as a deposition process and / or an etch process.

[0041]

[0050] For example, at 902, the method includes supplying a process gas through a first gas line (e.g., first gas line 202) connected to a top feed gas nozzle (e.g., top feed gas nozzle 135), a second gas line (e.g., second gas line 204) connected to a side feed gas nozzle (e.g., side feed gas nozzle 133), and a number of valves (e.g., via one or more of the valve configurations of FIGS. 2-8) connected to the first and second gas lines. The process gas is then supplied from the top feed gas nozzle and the side feed gas nozzle to a processing space of a processing chamber (e.g., processing space 106 of processing chamber 100).

[0042]

[0051] Next, at 904, the method 900 includes controlling a gas flow rate of the process gas through at least one of the top-fed gas nozzle or the side-fed gas nozzle via at least one of a first orifice flow restrictor or a first needle valve connected to the first gas line, or a second orifice flow restrictor or a second needle valve connected to the second gas line. For example, during an etching process, one or more of the process gases described above can be used to etch various zones (or areas) of the substrate. For example, during a first etching cycle, one or more process gases can be provided into the processing space 106, for example, via the side-fed gas nozzle 133. In at least some embodiments, one or more of the process gases described above (e.g., O2, Cl2, CCl4O2, CO2, HCl, N2, NH3, N2O, NO2, O3, H2O, SF6, etc.) can be provided into the processing space 106 via the side-fed gas nozzle 133. For example, in at least some embodiments, the process gas used during the first etch cycle can be O2. The flow rate of the process gas through the side outlet 137 of the side-fed gas nozzle 133 is controlled by one or more second orifice flow restrictors or second needle valves connected to a second gas line. The etchant can be focused toward the side of the substrate (see FIG. 10C). In at least some embodiments, the process time during the first etch cycle can be about 0.2 seconds to about 0.6 seconds, and in some embodiments, about 0.4 seconds. In at least some embodiments, the RF source power is about 155 W to about 3000 W, and in some embodiments, about 2000 W. In at least some embodiments, the RF bias power can be about 0 to 100 W (pulsed or continuous), and in some embodiments, about 50 W (pulsed). In at least some embodiments, the pressure can be about 20 mTorr to about 80 mTorr, and in some embodiments, about 50 mTorr.

[0043]

[0052] Prior to performing the second etching cycle, the method 900 may include purging the process gas from the processing space of the process chamber or from at least one of the first gas line and the second gas line via a purge line connected to at least one of the inputs or outputs of the multiple valves.

[0044]

[0053] Further, at 904, during the second etching cycle, one or more process gases may be provided to the processing space 106, for example, via the upper feed gas nozzle 135. For example, in at least some embodiments, one or more of the process gases described above (e.g., O2, Cl2, CCl4O2, CO2, HCl, N2, NH3, N2O, NO2, O3, H2O, SF6, etc.) may be provided into the processing space 106 via the upper feed gas nozzle 135. For example, in at least some embodiments, the process gas used during the second etching cycle may be SF6. The flow rate of the process gas through the central outlet 134 and the intermediate outlet 136 is controlled by one or more first orifice flow restrictors or first needle valves connected to the first gas line. The etchant may be concentrated toward the central and intermediate surfaces of the substrate (see FIGS. 10A and 10B, respectively). In at least some embodiments, during the second etch cycle, the process time can be about 0.2 seconds to about 0.6 seconds, and in some embodiments, about 0.4 seconds. In at least some embodiments, the RF source power can be about 155 W to about 3000 W, and in some embodiments, about 2000 W. In at least some embodiments, the RF bias power can be about 0 to 100 W (pulsed or continuous), and in some embodiments, about 50 W (pulsed). In at least some embodiments, the pressure can be about 20 mTorr to about 80 mTorr, and in some embodiments, about 50 mTorr.

[0045]

[0054] As described above, the gas flow distribution system 200 of Figures 2-6 may be used when a distribution of process gases with the same flow ratio (e.g., 50:50) needs to be provided to the top-feed gas nozzles 135 and the side-feed gas nozzles 133. However, when a distribution of process gases with a different flow ratio (e.g., 70:30) needs to be provided to the top-feed gas nozzles 135 and the side-feed gas nozzles 133, the gas flow distribution system 200 of Figures 7 and 8 may be used.

[0046]

[0055] During 902 and 904, the gas flow rate can be measured using a mass flow meter connected to at least one of the first gas line 202 or the second gas line 204.

[0047]

[0056] While the forgoing is directed to several embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.

Claims

1. 1. An apparatus for processing a substrate, comprising: a processing chamber comprising a chamber body and a lid; an upper delivery gas nozzle configured to extend through the lid and direct process gas toward a substrate support surface of a substrate support disposed within a processing volume of the processing chamber; a side-delivery gas nozzle extending through the chamber body and configured to direct the process gas toward a side of the substrate support; a first gas line connected to the top supply gas nozzle, a second gas line connected to the side supply gas nozzle, and a number of valves connected to the first gas line and the second gas line for providing the process gas to the processing volume of the processing chamber; and a first orifice flow restrictor or a first needle valve connected to the first gas line; or at least one of a second orifice flow restrictor or a second needle valve connected to the second gas line; At least one output of the plurality of valves is a split output and is connected to the first gas line and the second gas line. Device.

2. The apparatus of claim 1 , further comprising a mass flow meter connected to at least one of the first gas line or the second gas line.

3. 10. The apparatus of claim 1, further comprising a purge line connected to at least one of the inputs or outputs of the plurality of valves and configured to purge the process gas from the first gas line and the second gas line.

4. The apparatus of claim 3 , wherein the purge line is connected to the input of the plurality of valves, the purge line comprising a third orifice flow restrictor or a third needle valve.

5. 2. The apparatus of claim 1, wherein the first gas line and the second gas line are connected to each other at a location before the process gas enters the first orifice flow restrictor or the first needle valve connected to the first gas line or the second orifice flow restrictor or the second needle valve connected to the second gas line.

6. The apparatus of claim 5 , wherein the plurality of valves includes a first pair of valves and a second pair of valves.

7. 7. The apparatus of claim 6, wherein the first pair of valves and the second pair of valves each include a valve having an output connected to the first gas line and the second gas line, and a valve having an output connected to a purge line.

8. 7. The apparatus of claim 6, wherein each valve of the first pair of valves and the second pair of valves has an input connected to one or more mass flow controllers.

9. 9. The apparatus of claim 6 or 8, wherein the first pair of valves and the second pair of valves each include an input connected to one or more mass flow controllers and an output connected to the first gas line and the second gas line, and a purge line is directly connected to the one or more mass flow controllers.

10. The apparatus of claim 1 , wherein the plurality of valves includes a first pair of valves and a second pair of valves.

11. 11. The apparatus of claim 6, 8, or 10, wherein each of the first pair of valves and the second pair of valves comprises a valve with a split output with at least one of the first orifice flow restrictor or the first needle valve connected to the first gas line or the second orifice flow restrictor or the second needle valve connected to the second gas line.

12. 2. The apparatus of claim 1, wherein the first gas line comprises the first orifice flow restrictor or the first needle valve, and the second gas line comprises the second orifice flow restrictor or the second needle valve.

13. 2. The apparatus of claim 1, wherein the top feed gas nozzle comprises a central outlet configured for central flow control and an intermediate outlet configured for intermediate flow control, the central outlet and the intermediate outlet being coupled to a gas panel via an inlet port.

14. 10. The apparatus of claim 1, wherein the side-fed gas nozzle comprises a side outlet configured for side flow control, the side outlet coupled to a gas panel via a corresponding inlet port.

15. 15. The apparatus of claim 1, wherein the processing chamber is configured to perform at least one of a plasma deposition process or an etching process.

16. 1. A method for processing a substrate, comprising: supplying a process gas to a processing volume of the process chamber via a first gas line connected to a top-feed gas nozzle, a second gas line connected to a side-feed gas nozzle, and a plurality of valves connected to the first gas line and the second gas line; a first orifice flow restrictor or a first needle valve connected to the first gas line; or controlling a gas flow rate of the process gas through at least one of the top feed gas nozzle or the side feed gas nozzle via at least one of a second orifice flow restrictor or a second needle valve connected to the second gas line; and the first orifice flow restrictor or the first needle valve connected to the first gas line; or measuring the flow rate of the process gas through at least one of the second orifice flow restrictor or the second needle valve connected to the second gas line with a mass flow meter connected to at least one of the first gas line or the second gas line. method.

17. 17. The method of claim 16, further comprising purging the process gas from the processing space of the process chamber or from at least one of the first gas line and the second gas line via a purge line connected to at least one of the inputs or outputs of the plurality of valves.

18. 20. The method of claim 17, wherein the purge line is connected to the input of the plurality of valves, the purge line including a third orifice flow restrictor.

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