Light source parameter information management method, light source parameter information management device, and computer-readable medium
A light source parameter management system addresses chromatic aberration in semiconductor exposure apparatuses by managing spectral linewidth and other parameters, enhancing yield and reducing costs in semiconductor manufacturing.
Patent Information
- Application Number
- JP2023508286
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2021-03-24
- Publication Date
- 2025-01-07
- Estimated Expiration
- 2041-03-24
AI Technical Summary
The wide spectral linewidth of KrF and ArF excimer laser devices leads to chromatic aberration in projection lenses, reducing resolution in semiconductor exposure apparatuses, necessitating a method to narrow the spectral linewidth to ignore chromatic aberration.
A light source parameter information management system that includes a data analysis server and a light source parameter management server to derive optimal priority target parameter information, estimate maintenance information, and control light sources to operate within specific target parameter ranges, thereby managing spectral linewidth and other critical parameters.
This system allows for efficient operation of light sources with specific priority target parameter information, improving semiconductor manufacturing yield and reducing costs by optimizing exposure processes.
Smart Images

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Abstract
Description
[Technical field]
[0001] The present disclosure relates to a light source parameter information management method, a light source parameter information management device, and a computer-readable medium. [Background technology]
[0002] In recent years, semiconductor exposure devices are required to improve their resolution in accordance with the miniaturization and high integration of semiconductor integrated circuits. For this reason, the wavelength of light emitted from the exposure light source is being shortened. For example, as gas laser devices for exposure, KrF excimer laser devices that output laser light with a wavelength of about 248 nm and ArF excimer laser devices that output laser light with a wavelength of about 193 nm are used.
[0003] The spectral line width of the spontaneous oscillation light of the KrF excimer laser device and the ArF excimer laser device is as wide as 350 to 400 pm. Therefore, if a projection lens is made of a material that transmits ultraviolet light such as KrF and ArF laser light, chromatic aberration may occur. As a result, the resolution may decrease. Therefore, it is necessary to narrow the spectral line width of the laser light output from the gas laser device to a level where the chromatic aberration can be ignored. Therefore, in order to narrow the spectral line width, a line narrow module (LNM) including a line narrowing element (such as an etalon or grating) may be provided in the laser resonator of the gas laser device. Hereinafter, a gas laser device in which the spectral line width is narrowed is referred to as a line narrowing gas laser device. [Prior art documents] [Patent documents]
[0004] [Patent Document 1] International Publication No. 2020 / 161865 [Patent Document 2] International Publication No. 2020 / 031301 [Patent Document 3] International Publication No. 2019 / 043780 [Patent Document 4] JP 2010-67794 A [Patent Document 5] U.S. Patent No. 5,383,217 [Patent Document 6] Summary of Japanese Patent Application Publication No. 11-121339
[0005] A light source parameter information management method according to one aspect of the present disclosure is a light source parameter information management method for managing parameter information of a light source used in an exposure apparatus, and includes obtaining priority target parameter information including variable items that are priority target parameters that are prioritized in operation of the light source and target values of the variables, estimating maintenance information including values that represent the lifespan of consumables in the light source until maintenance is required based on the priority target parameter information, and outputting the maintenance information.
[0006] A light source parameter information management device according to another aspect of the present disclosure includes a processor and a memory in which a program executed by the processor is stored, and by the processor executing instructions of the program, the processor obtains priority target parameter information including variable items that are priority target parameters that are prioritized in operation of the light source and target values of the variables, estimates maintenance information including values that represent the lifespan of consumables in the light source until maintenance is required based on the priority target parameter information, and outputs the maintenance information.
[0007] A computer-readable medium according to another aspect of the present disclosure is a non-transitory computer-readable medium having recorded thereon a program that causes a computer to realize a function of managing parameter information of a light source used in an exposure apparatus, the computer-readable medium having recorded thereon a program that causes the computer to realize the following functions: a function of acquiring priority target parameter information including variable items that are priority target parameters that are prioritized in the operation of the light source and target values of the variables; a function of estimating maintenance information based on the priority target parameter information including values that represent the life until maintenance of consumables in the light source; and a function of outputting the maintenance information. [Brief description of the drawings]
[0008] Some embodiments of the present disclosure will now be described, by way of example only, with reference to the accompanying drawings. [Figure 1] FIG. 1 shows a schematic configuration of a semiconductor manufacturing system in an exemplary semiconductor factory. [Diagram 2] FIG. 2 shows a schematic configuration of a lithography system. [Diagram 3] FIG. 3 shows an example of an output pattern of a light emission trigger signal output from the exposure control unit to the laser control unit. [Figure 4] FIG. 4 shows an example of an exposure pattern for step-and-scan exposure on a wafer. [Diagram 5] FIG. 5 shows the relationship between one scan field and the static exposure area on the wafer. [Figure 6] FIG. 6 shows an example of a static exposure area. [Figure 7] FIG. 7 shows a schematic diagram of a light source configuration for an exemplary exposure apparatus. [Figure 8] FIG. 8 shows the configuration of a semiconductor manufacturing system according to the first embodiment. [Figure 9] FIG. 9 is a block diagram showing an overall process flow in the semiconductor manufacturing system according to the first embodiment. [Figure 10] FIG. 10 is a flowchart showing an example of the processing content in the data analysis server. [Figure 11] FIG. 11 is a graph showing a method for determining the target values and their ranges of the light source parameters from the regression curve. [Figure 12] FIG. 12 is a flowchart showing an example of the processing contents in the light source parameter managing server. [Figure 13] FIG. 13 is a flowchart showing an example of the processing contents in the light source parameter managing server. [Figure 14] FIG. 14 is a flowchart showing an example of a subroutine applied to step S22 in FIG. [Figure 15] FIG. 15 is a flowchart showing an example of a subroutine applied to step S29 in FIG. 13 and step S44 in FIG. [Figure 16] FIG. 16 is a block diagram showing an overall process flow in the semiconductor manufacturing system according to the second embodiment. [Figure 17] FIG. 17 is a flowchart showing an example of a flow for checking recommended target parameter information in the data analysis server according to the second embodiment. [Figure 18] FIG. 18 is a graph showing an example of an analysis of the relationship between the recommended target parameters and the parameters of the exposure performance. [Figure 19] FIG. 19 is a flowchart showing an example of processing contents in the light source parameter managing server of the second embodiment. [Figure 20] FIG. 20 is a flowchart showing an example of processing contents in the light source parameter managing server of the second embodiment. [Figure 21] FIG. 21 is a flowchart showing an example of a subroutine applied to step S72 in FIG. [Figure 22] FIG. 22 is a flowchart showing an example of a subroutine applied to step S79 in FIG. 20 and step S94 in FIG. [Figure 23] FIG. 23 is a flowchart showing an example of a subroutine applied to step S106 in FIG. [Figure 24] FIG. 24 is a flowchart showing an example of processing contents in the light source parameter managing server of the third embodiment. [Diagram 25] FIG. 25 is a flowchart showing an example of a subroutine applied to step S71 in FIG. [Figure 26] FIG. 26 is an example of a graph showing the relationship between the priority target parameters and the operation control parameters. [Figure 27] FIG. 27 is a flowchart showing an example of the processing content in the data analysis server according to the fourth embodiment. [Figure 28]FIG. 28 is a graph showing an example of a method for determining a target spectral linewidth and its range using a regression curve. [Figure 29] FIG. 29 is a flow chart illustrating an example of a subroutine that may be applied to step S71 of FIG. 24 when the spectral linewidth is the priority target parameter. [Diagram 30] FIG. 30 is an example of a graph showing the relationship between the spectral linewidth and the lens spacing of the wavefront tuning device. [Diagram 31] FIG. 31 is a flowchart showing an example of the processing contents in the light source parameter management server when the priority target parameter value is a value of high pulse energy and the recommended target parameter value is a value of wide spectral linewidth. [Diagram 32] FIG. 32 is an example of a graph showing the relationship between pulse energy and the lens spacing of a wavefront tuning device. [Diagram 33] FIG. 33 is an example of a graph showing the relationship between pulse energy and spectral linewidth. [Diagram 34] FIG. 34 is a flowchart showing an example of the processing contents in the light source parameter management server when the priority target parameter value is set to the value of high pulse energy and the specification range of the pulse energy stability parameter can be relaxed. [Diagram 35] FIG. 35 is an example of a graph showing the relationship between the halogen gas partial pressure and the pulse energy, and the relationship between the halogen gas partial pressure and the pulse energy stability. [Diagram 36] FIG. 36 is a graph showing an example of setting the halogen gas partial pressure when prioritizing the stability of the pulse energy in the optical performance priority mode. [Figure 37] FIG. 37 is an example of a graph showing the relationship between the duty ratio and the pulse energy. [Figure 38] FIG. 38 is a flowchart showing an example of the processing contents in the light source parameter management server when the priority target parameter is the duty ratio and the parameter range of the pulse energy stability can be relaxed. [Figure 39] FIG. 39 is a flowchart showing an example of processing contents applied in the case of consumable life extension mode operation. [Diagram 40] FIG. 40 is an example of a graph showing the relationship between gas consumption per unit pulse and pulse energy. [Diagram 41] FIG. 41 shows an example of a process flow applied in the case of low gas consumption mode operation. [Diagram 42] FIG. 42 shows an example of a process flow applied in the case of power saving mode operation. [Diagram 43] FIG. 43 is a block diagram showing a modification of the fourth embodiment. [Diagram 44] FIG. 44 is a table showing a specific example of parameter information regarding a light source. [Diagram 45] FIG. 45 is a table showing a specific example of the priority target parameter information. [Figure 46] FIG. 46 is a chart showing a specific example of the recommended target parameter information. [Figure 47] FIG. 47 is a chart showing a specific example of maintenance information. [Figure 48] FIG. 48 is a table showing a specific example of the operation control target parameter information. Embodiment
[0009] -table of contents- 1. Explanation of terms 2. Semiconductor manufacturing system description 2.1 Configuration 2.2 Operation 3. Lithography System Description 3.1 Configuration 3.2 Operation 4. Example of exposure pattern on wafer 5. Examples of light sources 5.1 Configuration 5.2 Operation 5.3 Other 5.4 Challenges 6. Embodiment 1 6.1 Configuration 6.2 Operation 6.2.1 Example of data analysis server processing 6.2.2 Example of processing by the server for managing light source parameters 6.3 Effects 6.4 Other 7. Embodiment 2 7.1 Configuration 7.2 Operation 7.2.1 Example of data analysis server processing 7.2.2 Example of processing by the light source parameter management server 7.3 Effects 7.4 Other 8. Embodiment 3 8.1 Configuration 8.2 Operation 8.3 Effects 9. Embodiment 4 9.1 Configuration 9.2 Performance Priority Mode Operation 9.2.1 Example when Spectral Linewidth Δλ is the Priority Target Parameter 9.2.1.1 Operation 9.2.1.2 Effects 9.2.1.3 Other 9.2.2 Pulse energy is the primary target parameter 9.2.2.1 Example of a case where a high pulse energy is a priority and exposure can be performed with a wide spectral linewidth Δλ 9.2.2.1.1 Behavior 9.2.2.1.2 Effects 9.2.2.1.3 Miscellaneous 9.2.2.2 Example of a case where a high pulse energy is a priority and exposure is possible with relaxed pulse energy stability specifications 9.2.2.2.1 Operation 9.2.2.2.2 Effects 9.2.2.2.3 Miscellaneous 9.2.2.3 Example of a case where high duty cycle operation is a priority and exposure is possible with relaxed pulse energy stability specifications 9.2.2.3.1 Behavior 9.2.2.3.2 Effects 9.2.2.3.3 Miscellaneous 9.3 Consumable Life Extension Mode Operation 9.3.1 Example of resetting the target halogen gas partial pressure 9.3.1.1 Operation 9.3.1.2 Effects 9.3.2 Example of resetting target spectral linewidth 9.3.3 Example of reconfiguring gas consumption 9.3.4 Effects 9.3.5 Other 9.4 Reduced consumption mode operation 9.4.1 Reduced gas consumption mode operation 9.4.1.1 Example of resetting target halogen partial pressure 9.4.1.2 Example of broadening the target spectral linewidth 9.4.1.3 Example of decreasing the number of pulses remaining until maintenance 9.4.1.4 Effects 9.4.1.5 Other 9.4.2 Power saving mode operation 9.4.2.1 Example of Resetting the Target Value of the Charging Voltage 9.4.2.2 Example of resetting the target value of halogen gas partial pressure 9.4.2.3 Example of broadening the target spectral linewidth 9.4.3 Effects 9.4.4 Other 9.5 Variations 10.Examples of parameter information 11. Computer-readable media on which programs are recorded 12.Other Hereinafter, the embodiments of the present disclosure will be described in detail with reference to the drawings. The embodiments described below show some examples of the present disclosure, and do not limit the contents of the present disclosure. Furthermore, not all of the configurations and operations described in each embodiment are necessarily essential as the configurations and operations of the present disclosure. Note that the same components are given the same reference symbols, and duplicated explanations will be omitted.
[0010] 1. Explanation of terms "Consumables" refers to parts or modules that deteriorate and need to be replaced due to pulsed output from the light source used in the exposure apparatus. Examples include the light source chamber, line narrowing module (LNM), output coupling mirror (OC), monitor module, etc. The concept of "replacement" includes not only replacing a consumable with a new one, but also cleaning the consumable to maintain and / or restore the function of the part and rearrange the same consumable.
[0011] "Critical dimension (CD)" refers to the dimension of a fine pattern formed on a wafer such as a semiconductor wafer.
[0012] "Overlay" refers to the overlapping of fine patterns formed on a wafer such as a semiconductor wafer.
[0013] The term "exposure conditions" refers to the conditions under which light is exposed to a resist on a wafer such as a semiconductor. Specific examples include illumination conditions, projection conditions, exposure dose, spectral characteristics of the light source, and output characteristics of the light source.
[0014] In this specification, the terms "parameter", "parameter value", and "parameter information" are used with the following meanings.
[0015] A "parameter" is an item that represents a variable.
[0016] The "parameter value" is the value of the variable, i.e., the specific numerical value of the parameter.
[0017] "Parameter information" is a collection of data including multiple variables and the values of those multiple variables.
[0018] Specific examples of parameter information will be described later (FIG. 44). For example, parameter information of a spectral linewidth is a collection of data including a variable (item) called a spectral linewidth, its value, and a variable called the stability (operating range) of the spectral linewidth and its value. The value indicating the stability of the spectral linewidth includes, for example, a lower limit value and an upper limit value of the operating range. Furthermore, parameter information of a spectral linewidth may include a variable called a period during which operation is performed while satisfying the value and stability of the spectral linewidth, and data on the value of the variable.
[0019] The term "target" such as "target parameter" or "target parameter information" refers to a parameter or parameter information that is a control target. The target parameter information may include a target value that is a control target for the parameter, and information indicating its allowable range. The allowable range here may be interpreted as the operating range, operating specification, fluctuation range, or stability range of the parameter.
[0020] "Priority target parameter information" is a collection of data on variable items, which are target parameters prioritized in the operation of the light source, and the target values of the variables. Specific examples of priority target parameter information will be described later (FIG. 45).
[0021] Furthermore, the priority target parameter information also includes the following two cases.
[0022] a) This also includes cases where the user selects one of the priority modes: the light source's optical performance priority mode operation, the consumables' life extension mode operation, and the consumption reduction mode operation.
[0023] b) This also includes cases where a collection of data including variable items of priority target parameters and target values of the variables is presented as a proposal for operating the light source, and the user selects the variable items of the priority target parameters of the light source.
[0024] Here, the definitions of each priority mode operation are shown below.
[0025] The optical performance priority mode operation of the light source refers to operating the light source so as to give priority to the optical performance of the light source.
[0026] The consumable life extension mode operation refers to operating the light source so as to extend the life of the consumables of the light source.
[0027] Reduced consumption mode operation refers to operating a light source in such a way as to reduce the amount of power and gas consumed by the light source. Electricity and laser gas are each elements consumed by the operation of a light source.
[0028] "Recommended target parameter information" is a collection of data on the variable items and target values of parameters that are different from the priority target parameters estimated when the light source is operated according to the target parameter information prioritized in the operation of the light source and that require specification relaxation. Specific examples of recommended target parameter information will be described later (FIG. 46).
[0029] "Maintenance information" is a collection of data on the number of pulses or the remaining time until the operation of the light source is stopped and maintenance of each consumable part of the light source that requires periodic part replacement is performed. Specific examples of maintenance information will be described later (Figure 47).
[0030] The remaining number of pulses or remaining time until maintenance for each consumable is a value indicating the lifespan of each consumable (remaining lifespan until maintenance). If the number of pulses per unit time, such as the average number of pulses per day, is known, the remaining number of pulses until maintenance of the consumable can be converted into remaining time. The parameter indicating the lifespan of the consumable may be the remaining number of pulses until maintenance, the remaining time, or both. Furthermore, the maintenance information may include date and time information indicating when to replace the consumable.
[0031] The "operation control target parameters" are the control target parameters of the light source required for the light source to realize the priority target parameter information. The "operation control target parameter information" is a collection of operation control target parameters and target values, and multiple operation control target parameters may be set to satisfy multiple required specifications. Specific examples of operation control target parameter information will be described later (FIG. 48).
[0032] An "external device" is a device that receives at least one of the priority target parameter information, the recommended target parameter information, and the maintenance information. Specifically, the external device may be, for example, a semiconductor factory management system, a display device (a display device for notifying an operator of priority control parameter information, the recommended target parameter information, the maintenance information, etc.), an exposure device, a management system for an exposure device, etc.
[0033] 2. Semiconductor manufacturing system description 2.1 Configuration 1 shows a schematic configuration of a semiconductor manufacturing system 200 in an exemplary semiconductor factory. The semiconductor manufacturing system 200 includes a plurality of lithography systems 10, a wafer inspection tool management system 202, an exposure tool management system 204, a light source management system 206, and a semiconductor factory management system 208.
[0034] The semiconductor factory management system 208 is connected to the wafer inspection equipment management system 202 , the exposure equipment management system 204 , and the light source management system 206 via a network 210 .
[0035] The network 210 is a communication line capable of transmitting information by wire, wireless, or a combination of wire and wireless. The network 210 may be a wide area network or a local area network.
[0036] Lithography system identification codes #1, #2, ... #k, ... #w are used here to identify each of the multiple lithography systems 10 included in semiconductor manufacturing system 200. w is the number of lithography systems included in semiconductor manufacturing system 200. w is an integer equal to or greater than 1. k is an integer in the range of 1 to w.
[0037] Each lithography system #k includes a wafer inspection tool 12, an exposure tool 14, and a light source 16. For ease of explanation, the wafer inspection tool 12, the exposure tool 14, and the light source 16 included in the lithography system #k will be referred to as the wafer inspection tool #k, the exposure tool #k, and the light source #k, respectively. For simplicity, each lithography system #k is shown here as including one each of the wafer inspection tool #k, the exposure tool #k, and the light source #k.
[0038] Some or all of the multiple lithography systems #1 to #w may be of different configurations. The number and arrangement of each of the wafer inspection apparatus #k, exposure apparatus #k, and light source #k included in the lithography system #k may be designed as appropriate. Each lithography system #k is configured to include one or more wafer inspection apparatus #k, one or more exposure apparatus #k, and one or more light sources #k.
[0039] Wafer inspection apparatus management system 202 is connected to each of the wafer inspection apparatuses #1 to #w via a first local area network 211. Exposure apparatus management system 204 is connected to each of the exposure apparatuses #1 to #w via a second local area network 212. Light source management system 206 is connected to each of the light sources #1 to #w via a third local area network 213.
[0040] In FIG. 1, the first local area network 211 is indicated as "LAN1", the second local area network 212 is indicated as "LAN2", and the third local area network 213 is indicated as "LAN3".
[0041] 2.2 Operation The wafer inspection devices #1 to #w measure the physical property values of the surface of the wafer on which each resist pattern is formed for each wafer. The "physical property values" are, for example, CD value, overlay, magnification value, and surface height. The wafer inspection device management system 202 acquires the physical property values measured for each wafer from the wafer inspection devices #1 to #w, and stores the measured physical property value data for each wafer of each lithography system #k. Furthermore, the wafer inspection device management system 202 organizes and stores the physical property value data for each scan field of each wafer. Then, the wafer inspection device management system 202 outputs a part or all of these measurement data to the semiconductor factory management system 208 and a data analysis server (not shown) as necessary.
[0042] The exposure apparatus management system 204 acquires data including exposure conditions and measurement values from the exposure apparatuses #1-#w for each wafer and each scan field. The "exposure conditions" are, for example, projection conditions and illumination conditions. The "measurement values" are, for example, exposure dose and focus position. The exposure apparatus management system 204 stores data on the exposure conditions and measurement values for each lithography system #k, each wafer, and each scan field. The exposure apparatus management system 204 outputs some or all of this measurement data to the semiconductor factory management system 208, a data analysis server, etc. as necessary.
[0043] The light source management system 206 acquires operation data from each of the light sources #1 to #w, and stores the operation data of the light source #k for each lithography system #k. The operation data includes, for example, data on spectral characteristic values, data on pulse energy characteristic values, and data on output characteristic values of the laser light. The spectral characteristic values include, for example, the wavelength and the spectral linewidth. The output characteristic values of the laser light include, for example, the pulse energy value, σ (standard deviation value) indicating the variation in the pulse energy, the dose stability, the number of pulses per unit time, and the duty ratio. The operation data includes measurement data measured using a sensor or the like during the operation of the light source #k.
[0044] In addition, the light source management system 206 organizes and stores this data for each lithography system, each wafer, and each scan field, and outputs some or all of this measurement data to the semiconductor factory management system 208, a data analysis server, etc. as necessary.
[0045] The semiconductor factory management system 208 manages the entire semiconductor factory. The semiconductor factory management system 208 receives information acquired by, for example, the wafer inspection equipment management system 202, the exposure equipment management system 204, and the light source management system 206.
[0046] 3. Lithography System Description 3.1 Configuration 2 shows a schematic configuration example of a lithography system #k. The lithography system #k includes a wafer inspection tool 12, an exposure tool 14, and a light source 16.
[0047] The wafer inspection device 12 is capable of performing the following measurements by irradiating a laser beam onto a wafer and measuring the reflected or diffracted light. That is, the wafer inspection device 12 is capable of performing measurements including CD, wafer height, and overlay. The wafer inspection device 12 may also be a high-resolution scanning electron microscope (SEM). The wafer inspection device 12 includes a wafer inspection control unit 220, a wafer holder 225, and a wafer stage 226.
[0048] Exposure apparatus 14 includes an exposure control unit 50, a beam delivery unit (BDU) 15, a high-reflection mirror 51, an illumination optical system 66, a reticle 74 and a reticle stage 76, a projection optical system 78, a wafer holder 80 and a wafer stage 81, and a focus sensor 84. Exposure apparatus #k includes an exposure amount sensor (not shown) for measuring the exposure amount on wafer WF held by wafer holder 80.
[0049] The illumination optical system 66 is configured to shape the incident laser beam into a rectangular static exposure area SEA (see FIG. 5) with a substantially uniform light intensity distribution. The illumination optical system 66 is configured to generate an illumination pattern (not shown) so that the illumination conditions for the reticle 74 can be changed. The illumination pattern may be, for example, polarized illumination, annular illumination, dipole illumination, or the like.
[0050] The projection optical system 78 is arranged to image the reticle pattern onto the wafer WF, and includes a configuration in which, for example, an aperture (not shown) is arranged so that the imaging conditions of the projection optical system 78 can be adjusted, and the numerical aperture (NA) can be adjusted.
[0051] The focus sensor 84 is disposed so as to be able to measure the distance between the surface of the wafer WF and the projection optical system 78 .
[0052] The light source 16 is, for example, an excimer laser device capable of narrow-band oscillation with variable wavelength and spectral linewidth, and includes a laser control unit 90, a monitor module, a chamber, a line-narrowing module, an output coupling mirror, and other devices, all of which are not shown in Fig. 1. A detailed configuration example of the excimer laser device will be described later with reference to Fig. 5.
[0053] In the present disclosure, the control device functioning as each control unit such as the exposure control unit 50 and the laser control unit 90 can be realized by a combination of hardware and software of one or more computers. Software is synonymous with program. A programmable controller is included in the concept of a computer. A computer is configured to include a CPU (Central Processing Unit) and a memory. A programmable controller is included in the concept of a computer. In addition, some or all of the processing functions of the control device may be realized using an integrated circuit such as an FPGA (Field Programmable Gate Array) or an ASIC (Application Specific Integrated Circuit).
[0054] It is also possible for the functions of multiple control devices to be realized by a single control device. Furthermore, in this disclosure, the control devices may be connected to each other via a communication network such as a local area network or the Internet. In a distributed computing environment, program units may be stored in both local and remote memory storage devices.
[0055] 3.2 Operation The exposure controller 50 outputs various target parameter values to the light source 16. The target parameter values provided from the exposure controller 50 to the light source 16 include a target wavelength λt, a target spectral linewidth Δλt, a target pulse energy Et, and other target parameter values.
[0056] The laser control unit 90 controls the selected wavelength and wavelength bandwidth of a narrow-band module (described later) of the laser resonator so that the output wavelength and spectral linewidth of the light source 16 become the target wavelength λt and target spectral linewidth Δλt. The laser control unit 90 then outputs a pulsed laser beam in synchronization with a light emission trigger signal Tr, and outputs data measured by a monitor module (described later) to the exposure control unit 50 and the light source management system 206. The data measured by the monitor module includes the wavelength λ, the spectral linewidth Δλ, the pulse energy E, and the like.
[0057] The exposure control unit 50 controls the reticle stage 76 and the wafer stage 81 while outputting a light emission trigger signal Tr to scan the resist-coated wafer WF in a step-and-scan manner, which will be described later, and exposes the image of the reticle 74 onto the resist on the wafer WF by scanning. The exposure control unit 50 then outputs data on the exposure conditions to the exposure apparatus management system 204. The data on the exposure conditions includes, for example, the conditions of the illumination optical system 66 (illumination pattern), dose (exposure amount), focus (distance between the projection optical system 78 and the wafer surface), and the conditions of the projection optical system 78 (for example, NA).
[0058] The wafer inspection device 12 develops the exposed wafer WF in a developing device (not shown), and then measures the physical characteristic values (including, for example, CD value, overlay, magnification, surface height, etc.) of the wafer DW on which the resist pattern is formed. Then, the wafer inspection control unit 220 outputs these measurement data to the wafer inspection device management system 202.
[0059] 4. Example of exposure pattern on wafer 3 shows an example of an output pattern of the light emission trigger signal Tr output from the exposure control unit 50 to the laser control unit 90. In this example, after adjustment exposure for each wafer WF, the actual exposure pattern begins. The light source 16 stops oscillating during the step period in the step-and-scan exposure, and outputs pulsed laser light according to the interval of the light emission trigger signal Tr during the scan period. This type of laser oscillation pattern is called a burst operation pattern.
[0060] FIG. 4 shows an example of an exposure pattern for step-and-scan exposure on a wafer WF. Each of the many rectangular areas shown in the wafer WF in FIG. 4 is a scan field SF. A scan field SF is an exposure area for one scan exposure, and is also called a scan area. As shown in FIG. 4, wafer exposure is performed by dividing the wafer WF into multiple exposure areas (scan fields SF) of a predetermined size, and performing scan exposure on each exposure area during the period between the start (Wafer START) and end (Wafer END) of wafer exposure.
[0061] That is, in the wafer exposure, a first predetermined exposure area of the wafer WF is exposed by a first scan exposure (Scan #1), and then a second predetermined exposure area is exposed by a second scan exposure (Scan #2), and this step is repeated. During one scan exposure, multiple pulsed laser beams can be continuously output from the laser device. This scan exposure is sequentially repeated, and when the entire exposure area of the first wafer WF has been scanned and exposed, adjustment exposure is performed again, and then wafer exposure of the second wafer WF is performed.
[0062] Step-and-scan exposure is performed from Wafer START → Scan#1 → Scan#2 → . . . → Scan#126 → Wafer END in the order of the dashed arrows shown in Figure 4. The wafer WF is an example of a semiconductor substrate (photosensitive substrate) coated with resist.
[0063] 5 shows the relationship between one scan field SF on the wafer WF and the static exposure area SEA. In the static exposure area SEA, a laser beam having a rectangular light intensity distribution that is approximately uniform is irradiated onto the reticle 74, and exposure is performed while the reticle 74 and the wafer WF move in different directions in the short axis direction (Y axis direction) according to the reduction magnification of the projection optical system 78, so that the reticle pattern is exposed onto the scan field SF on the wafer WF.
[0064] In this example, the wafer stage 81 moves in the negative direction of the Y axis and the scanning direction moves in the positive direction of the Y axis during scanning exposure. However, the movement time for the next step may be shortened by combining the case where the wafer stage 81 moves in the positive direction of the Y axis and the scanning direction moves in the negative direction.
[0065] Here, the number of pulses Ns of the pulsed laser light irradiated onto the resist during scanning exposure is called N slits. As shown in Figure 6, if the length in the short axis direction of the static exposure area SEA that can be subjected to one-shot exposure is By and the length in the long axis direction is Bx, N slits is expressed by the following formula.
[0066] Ns=f Vw / By In the equation, Vw is the scanning speed of the wafer WF, and f is the repetition frequency of the light source.
[0067] 5. Examples of light sources 5.1 Configuration 7 shows a schematic configuration of an exemplary light source 16. The light source 16 is, for example, a KrF excimer laser device, and includes a chamber 100, a line narrowing module (LNM) 102, an inverter 104, an output coupling mirror (OC) 106, a wavefront adjuster 107, a monitor module 108, a charger 110, a pulse power module (PPM) 112, a gas supply device 114, a gas exhaust device 116, and an exit shutter 118.
[0068] The chamber 100 includes a first window 121, a second window 122, a cross-flow fan (CFF) 123, a motor 124 for rotating the CFF 123, a pair of electrodes 125, 126, an electrical insulator 127, a pressure sensor 128, and a heat exchanger (not shown).
[0069] The inverter 104 is a power supply device for the motor 124. The inverter 104 receives a command signal specifying the frequency of the power to be supplied to the motor 124 from the laser control unit 90. The inverter 104 is configured to be able to control the rotation speed of the CFF 123 by controlling the frequency of the inverter 104.
[0070] The PPM 112 is connected to the electrode 125 via a feedthrough in an electrical insulator 127 of the chamber 100. The PPM 112 includes a semiconductor switch 129, a charging capacitor, a pulse transformer, and a pulse compression circuit, none of which are shown.
[0071] The LNM 102 includes a beam expander using a first prism 131 and a second prism 132, a rotation stage 134, and a grating 136. The first prism 131 and the second prism 132 are arranged to expand the beam of light emitted from the second window 122 of the chamber 100 in the Y-axis direction and cause the beam to enter the grating 136.
[0072] Here, the grating 136 is Littrow-positioned so that the incident angle and diffraction angle of the laser light coincide with each other. The second prism 132 is placed on the rotating stage 134 so that the incident angle and diffraction angle of the laser light on the grating 136 change when the rotating stage 134 rotates.
[0073] The OC 106 is a partially reflecting mirror and is arranged to configure an optical cavity together with the LMN 102. The chamber 100 is arranged on the optical path of this optical cavity.
[0074] The wavefront adjuster 107 is disposed between the OC 106 and the chamber 100. The wavefront adjuster 107 includes a cylindrical concave lens 171, a cylindrical convex lens 172, and a linear stage 174. The distance between the concave lens 171 and the convex lens 172 is changed by the linear stage 174, thereby making it possible to change the radius of curvature of the wavefront as viewed from the Z axis.
[0075] The monitor module 108 includes a first beam splitter 141, a second beam splitter 142, a pulse energy detector 144, and a spectrum detector 146. The first beam splitter 141 is disposed on the optical path of the laser light output from the OC 106 so that a part of the laser light is reflected and enters the second beam splitter 142.
[0076] The pulse energy detector 144 is disposed so that the laser light transmitted through the second beam splitter 142 is incident thereon. The pulse energy detector 144 may be, for example, a photodiode that measures the light intensity of the ultraviolet light. The second beam splitter 142 is disposed so that a portion of the laser light is reflected and incident on the spectrum detector 146.
[0077] The spectrum detector 146 may be, for example, an etalon spectrometer including an etalon and an image sensor. The monitor etalon spectrometer is configured to be able to measure the interference fringes generated by the etalon with the image sensor. Then, based on the generated interference fringes, the central wavelength and the spectral linewidth of the output pulse laser light are measured.
[0078] In the case of a KrF excimer laser device, the gas supply device 114 is connected to an inert gas supply source 152, which is a supply source of inert laser gas, and a halogen gas supply source 154, which is a supply source of halogen-containing laser gas, via piping. The inert laser gas is a mixed gas of Kr gas and Ne gas. The halogen-containing laser gas is a mixed gas of F2 gas, Kr gas, and Ne gas. The gas supply device 114 is connected to the chamber 100 via piping.
[0079] The gas supply device 114 includes automatic valves and mass flow controllers (not shown) for supplying a predetermined amount of an inert laser gas or a halogen-containing laser gas to the chamber 100 .
[0080] The gas exhaust device 116 is connected to the chamber 100 via a pipe. The gas exhaust device 116 includes a halogen filter (not shown) for removing halogen and an exhaust pump, and is configured so that the laser gas from which the halogen has been removed is exhausted to the outside.
[0081] The exit shutter 118 is disposed on the optical path of the laser light output from the light source 16 to the outside, and is configured to be capable of outputting the laser light to the outside and blocking the light.
[0082] The light source 16 is disposed so that the laser light output from the light source 16 enters the exposure device 14 via an exit shutter 118 .
[0083] 5.2 Operation The operation of the light source 16 will be described. After exhausting the gas present in the chamber 100 via the gas exhaust device 116, the laser control unit 90 fills the chamber 100 with a mixed gas of Kr and Ne and a mixed gas of F2, Kr, and Ne via the gas supply device 114 so as to achieve a desired gas composition and total gas pressure.
[0084] The laser control unit 90 rotates the motor 124 at a predetermined rotation speed via the inverter 104 to rotate the CFF 123. As a result, the laser gas flows between the electrodes 125 and 126.
[0085] The laser control unit 90 receives the target pulse energy Et from the exposure control unit 50 of the exposure device 14, and outputs data of the charging voltage V to the charger 110 so that the pulse energy becomes Et.
[0086] The charger 110 charges the charging capacitor of the PPM 112 to a charging voltage V. When a light emission trigger signal Tr1 is output from the exposure device 14, a trigger signal Tr2 is input from the laser control unit 90 to a semiconductor switch 129 of the PPM 112 in synchronization with the light emission trigger signal Tr1. When this semiconductor switch 129 operates, a current pulse is compressed by the magnetic compression circuit of the PPM 112, and a high voltage is applied between the electrodes 125, 126 in accordance with the charging voltage V. As a result, a discharge occurs between the electrodes 125, 126, and the laser gas is excited in the discharge space.
[0087] When the excited laser gas in the discharge space reaches its ground state, excimer light, which is ultraviolet light, is generated. This excimer light travels back and forth between the OC 106 and the LMN 102 and is amplified, resulting in laser oscillation. As a result, narrowband pulsed laser light is output from the OC 106.
[0088] The pulsed laser light output from the OC 104 enters the monitor module 108. In the monitor module 108, a part of the laser light is sampled by a first beam splitter 141 and enters a second beam splitter 142. The second beam splitter 142 transmits a part of the incident laser light to make it enter a pulse energy detector 144, and reflects the other part to make it enter a spectrum detector 146.
[0089] The pulse energy E of the pulsed laser light output from the light source 16 is measured by the pulse energy detector 144 , and data on the measured pulse energy E is output from the pulse energy detector 144 to the laser control unit 90 .
[0090] Furthermore, the central wavelength λ and the spectral linewidth Δλ are measured by the spectral detector 146 , and data on the measured central wavelength λ and spectral linewidth Δλ are output from the spectral detector 146 to the laser control unit 90 .
[0091] The laser control unit 90 receives the target pulse energy Et, the target wavelength λt, and the target spectral linewidth Δλt from the exposure device 14. The laser control unit 90 controls the pulse energy based on the pulse energy E measured by the pulse energy detector 144 and the target pulse energy Et. The control of the pulse energy includes controlling the charging voltage V so that the difference ΔE=E−Et between the pulse energy E measured by the pulse energy detector 144 and the target pulse energy approaches zero.
[0092] The laser control unit 90 controls the wavelength and the spectral linewidth based on the central wavelength λ and the target wavelength λt measured by the spectrum detector 146. The wavelength control includes controlling the rotation angle of the rotation stage 134 so that the difference δλ=λ-λt between the central wavelength λ measured by the spectrum detector 146 and the target wavelength λt approaches zero.
[0093] The control of the spectral linewidth includes controlling the linear stage 174 of the wavefront tuner 107 so that the difference ΔΔλ=Δλ−Δλt between the spectral linewidth Δλ measured by the spectral detector 146 and the target spectral linewidth Δλt approaches zero.
[0094] As described above, the laser control unit 90 receives the target pulse energy Et, the target wavelength λt, and the target spectral linewidth Δλt from the exposure device 14, and outputs a pulsed laser beam from the light source 16 in synchronization with the light emission trigger signal Tr1 each time the light emission trigger signal Tr1 is input.
[0095] When an excimer laser device repeatedly discharges, the electrodes 125, 126 wear out, the halogen gas in the laser gas is consumed, and impurity gas is generated. A decrease in the partial pressure of the halogen gas and an increase in the impurity gas in the chamber 100 adversely affect a decrease in the pulse energy of the pulsed laser light and the stability of the pulse energy. In order to suppress these adverse effects, the laser control unit 90 executes the following gas controls ([1] to [4]).
[0096] [1] Halogen injection control The halogen injection control is a gas control in which the halogen gas consumed mainly by discharge in the chamber 100 during laser oscillation is replenished by injecting a gas containing a halogen gas at a higher concentration than the halogen gas in the chamber 100. In this control, the laser control unit 90 controls the halogen partial pressure Hgct in the chamber 100 to be a target halogen partial pressure Hgct. Here, the target halogen partial pressure Hgct is one of the operation control target parameters of the light source 16.
[0097] [2] Partial gas exchange control Partial gas exchange control is gas control in which a part of the laser gas in chamber 100 is exchanged with new laser gas so as to suppress an increase in the concentration of impurity gas in chamber 100 during laser oscillation.
[0098] [3] Gas pressure control Gas pressure control is gas control in which, when it is difficult to control the pulse energy of the pulse laser light output from the light source 16 within the control range of the charging voltage V, laser gas is injected into the chamber 100 to change the total gas pressure P of the laser gas, thereby controlling the pulse energy. Here, the upper limit (HVULt) and lower limit (HVLLt) of the control range of the charging voltage V are one of the target parameters for controlling the operation of the light source 16.
[0099] [4] Total gas exchange control In the above-mentioned controls [1], [2] and [3], if the laser performance (pulse energy) cannot be maintained, the laser oscillation is stopped, the laser gas in the chamber 100 is exhausted, and after the chamber is filled with new laser gas, the laser oscillation is resumed and operation is performed. This type of control is called full gas exchange control.
[0100] Here, the "gas consumption amount Gw" is defined as the amount of laser gas consumed per unit number of pulses. This gas consumption amount Gw can be calculated by the formula Gw=Ga / Ng from the amount of gas Ga supplied to the chamber 100 and the number of pulses Ng of the pulsed laser light output at that time when performing at least one of the halogen injection control, partial gas exchange control, gas pressure control, and total gas exchange control.
[0101] Furthermore, the target gas consumption rate Gwt is one of the operation control target parameters of the light source 16, and the light source 16 is subjected to gas control so that the gas consumption rate per unit number of pulses becomes Gwt.
[0102] When exhausting the laser gas from the chamber 100, the laser control unit 90 controls the gas exhaust device 116. The laser gas exhausted from the chamber 100 has halogen gas removed by a halogen filter (not shown) and is exhausted to the outside of the light source 16.
[0103] The laser control unit 90 outputs data on these parameter values, including the number of oscillation pulses, the charging voltage V, the gas pressure P in the chamber 100, the pulse energy E of the laser light, the wavelength λ, and the spectral linewidth Δλ, to the exposure tool 14 and the light source management system 206.
[0104] 5.3 Other In FIG. 7, an example of a narrow-band KrF excimer laser device is shown as the light source 16, but the light source is not limited to this example and may be a narrow-band ArF excimer laser device.
[0105] Although an example of a single chamber is shown as the light source 16, the light source is not limited to this example, and may be a laser device including a master oscillator that outputs narrowband pulsed laser light, and an amplifier that amplifies the pulsed laser light by a chamber containing an excimer laser gas.
[0106] In addition, in a laser device including a master oscillator and an amplifier, the master oscillator may be a solid-state laser device that combines a solid-state laser and a nonlinear crystal and outputs narrow-band laser light in the amplifiable wavelength range of an ArF laser or a KrF laser.
[0107] 5.4 Challenges The target parameter information and its effect vary depending on the customer, the customer's process design, and the product being manufactured. Also, the light source is guaranteed to operate within the range of the product's design specifications.
[0108] However, such a uniform range of target parameter information is often insufficient for semiconductor manufacturing users who are moving toward ultra-miniaturization.
[0109] At semiconductor production sites, there is an increasing need to monitor and control parameters using more detailed and strict target parameter information.
[0110] However, few light sources or compatible lithography systems are available that can be operated to provide specific, prioritized target parameter information that is of particular importance to an individual user or semiconductor process.
[0111] 6. Embodiment 1 6.1 Configuration Fig. 8 shows the configuration of a semiconductor manufacturing system 300 according to the first embodiment. Differences between the configuration of Fig. 8 and Fig. 1 will be described. The semiconductor manufacturing system 300 shown in Fig. 8 has a configuration in which a data analysis server 310 and a light source parameter management server 320 are added to the configuration of the semiconductor manufacturing system 200 in Fig. 1. The data analysis server 310 and the light source parameter management server 320 are connected to a network 210.
[0112] Each of the data analysis server 310 and the light source parameter management server 320 includes a processor (not shown) and a storage device in which a program is stored. The storage device is a tangible non-transitory computer-readable medium, and includes, for example, a memory that is a main storage device and a storage that is an auxiliary storage device. The computer-readable medium may be, for example, a semiconductor memory, a hard disk drive (HDD) device, a solid state drive (SSD) device, or a combination of a plurality of these. The processor includes a CPU, and executes various processes by executing program instructions. The processor may be a combination of a CPU and a graphics processing unit (GPU), or may include an integrated circuit such as a programmable logic device (PLD).
[0113] 6.2 Operation 9 is a block diagram showing an overall process flow of the semiconductor manufacturing system 300. The data analysis server 310 executes the following steps (A-1 to A-5).
[0114] Step A-1: The data analysis server 310 acquires data from the wafer inspection device management system 202, the exposure device management system 204, the light source management system 206, and the in-factory tracking data 207, and organizes and stores the data by linking it to each lithography system, each wafer, and each scan. The tracking data 207 includes, for example, data tracking the yield of chips in a wafer.
[0115] Step A-2: The data analysis server 310 analyzes the parameter information of the lithography system #k organized and stored in step A-1. As the analysis method in the data analysis server 310, for example, the method described in Patent Document 4 may be applied.
[0116] Step A-3: The data analysis server 310 extracts parameters of the light source #k that have a large effect on the parameters of the exposure performance from the analysis results of step A-2.
[0117] Step A-4: The data analysis server 310 obtains priority target parameter information of the light source #k based on the relationship between the parameters of the light source #k extracted in step A-3 and the parameters of the exposure performance.
[0118] Step A-5: The data analysis server 310 outputs the priority target parameter information of the light source #k obtained in step A-4 to the semiconductor factory management system 208.
[0119] The semiconductor factory management system 208 executes the following steps (B-1, B-2).
[0120] Step B-1: The semiconductor factory management system 208 receives the priority target parameter information of the light source #k and management information 209 of other semiconductor factories. The management information 209 of other semiconductor factories is data including, for example, the process of the semiconductor factory, the semiconductor yield, the factory line schedule, and the semiconductor manufacturing cost.
[0121] Step B-2: The semiconductor factory management system 208 outputs the priority target parameter information of the light source #k to the light source parameter management server 320 based on the acquired priority target parameter information and management information of other semiconductor factories.
[0122] The light source parameter management server 320 executes the following steps (C-1 to C-3).
[0123] Step C-1: The light source parameter management server 320 receives priority target parameter information from the semiconductor factory management system 208.
[0124] Step C-2: The light source parameter management server 320 estimates the maintenance information of the light source when the priority target parameter information is set.
[0125] Step C-3: The light source parameter management server 320 outputs the maintenance information to the semiconductor factory management system 208.
[0126] The semiconductor factory management system 208 further executes the following steps (B-4, B-5).
[0127] Step B-4: The semiconductor factory management system 208 receives the maintenance information of the light source #k.
[0128] Step B-5: The semiconductor factory management system 208 determines whether operation of the light source #k is permitted (OK / NOK) based on the management information 209 of other semiconductor factories and the maintenance information of the light source #k, and outputs the determination result to the light source parameter management server 320. The semiconductor factory management system 208 outputs an OK signal when operation of the light source #k is permitted (OK determination), and outputs a NOK signal when operation of the light source #k is not permitted (NOK determination).
[0129] The light source parameter management server 320 further executes the following steps (C-4 to C-6).
[0130] Step C-4: If an OK judgment is obtained to permit operation of the light source #k, the light source parameter management server 320 outputs priority target parameter information to the light source #k via the light source management system 206. As a result, the priority target parameter information is set in the light source #k, and the operation of the light source #k is controlled based on the priority target parameter information.
[0131] Step C-5: Also, if an OK judgment is obtained, the light source parameter management server 320 estimates maintenance information for when the light source #k is operated in a manner that satisfies the priority target parameter information from the operating data of the light source #k, and outputs the estimated maintenance information to the semiconductor factory management system 208.
[0132] Step C-6: On the other hand, if a NOK judgment is obtained that indicates that operation of the light source #k is not permitted, the light source parameter management server 320 outputs a signal (operation stop signal) commanding the light source #k to stop operation via the light source management system 206. As a result, the light source #k stops operating.
[0133] The individual process flows of the data analysis server 310 and the light source parameter management server 320 will be further described in detail.
[0134] 6.2.1 Example of data analysis server processing Fig. 10 is a flowchart showing an example of the processing content in the data analysis server 310. The processing of the steps shown in Fig. 10 is realized by the processor included in the data analysis server 310 executing program instructions.
[0135] When the flowchart in FIG. 10 starts, in step S11, the data analysis server 310 acquires various data from the wafer inspection apparatus management system 202, the exposure apparatus management system 204, the light source management system 206, etc., and organizes and stores the data into wafer inspection data, light source data, and exposure apparatus data for each scan of each wafer in the lithography system #k.
[0136] In step S12, the data analysis server 310 analyzes the correlation between each parameter of the light source #k and each parameter of the exposure performance of the exposure tool #k.
[0137] In step S13, the data analysis server 310 selects light source parameters that are highly correlated with the exposure performance parameters.
[0138] In step S14, the data analysis server 310 calculates a regression curve of the parameters of the light source #k that has been selected as having a high correlation with the parameters of the exposure performance of the exposure tool #k.
[0139] In step S15, the data analysis server 310 calculates, from the calculated regression curve, target values and their ranges of the parameters of the light source #k that bring the parameter values of the exposure performance into the allowable ranges (see FIG. 11).
[0140] In step S16, the data analysis server 310 outputs the target parameter value and its range of the light source as the priority target parameter information of the light source #k. After step S16, the data analysis server 310 ends the flowchart of FIG.
[0141] Fig. 11 is a graph showing a method for determining the target values and their ranges of light source parameters from a regression curve. The horizontal axis of Fig. 11 represents the exposure performance parameter value R, and the vertical axis represents the light source parameter value L. The regression curve RC is a regression curve of the light source parameters of light source #k selected as having a high correlation with the exposure performance parameter of exposure tool #k.
[0142] Based on the target value Rt of the exposure performance parameter of the exposure tool #k and the allowable lower limit value Rmin and the allowable upper limit value Rmax indicating its allowable range, the target value Lt of the light source parameter and the allowable lower limit value Lmin and the allowable upper limit value Lmax indicating its allowable range can be obtained from the regression curve RC. The set of data including the target value Lt, the allowable lower limit value Lmin, and the allowable upper limit value Lmax of the light source parameter thus obtained can become the priority target parameter information of the light source.
[0143] 6.2.2 Example of processing by the server for managing light source parameters 12 and 13 are flowcharts showing an example of processing contents in the light source parameter management server 320. The processing of the steps shown in Fig. 12 and 13 is realized by a processor included in the light source parameter management server 320 executing program instructions.
[0144] 12 starts, in step S20, the light source parameter management server 320 acquires priority target parameter information of light source #k. The priority target parameter information of light source #k acquired by the light source parameter management server 320 is not limited to a single item of target parameter, and for example, the light source parameter management server 320 may acquire target parameter information in descending order of priority.
[0145] In step S22, the light source parameter management server 320 estimates the maintenance information of the light source #k when the light source #k is set in the priority target parameter information. The subroutine of step S22 will be described later (FIG. 14).
[0146] In step S23, the light source parameter management server 320 outputs the estimated maintenance information of the light source #k to the semiconductor factory management system 208.
[0147] In step S24, light source parameter management server 320 determines whether it has received an operation OK signal or an operation NOK signal from semiconductor factory management system 208. If it has received an operation NOK signal from semiconductor factory management system 208, light source parameter management server 320 proceeds to step S25.
[0148] In step S25, the light source parameter management server 320 outputs a signal to stop operation of the light source #k. In the semiconductor factory, maintenance of the light source #k is performed based on the maintenance information output in step S23. After step S25, the light source parameter management server 320 ends the flowchart in FIG.
[0149] On the other hand, if it is determined in step S24 that the light source parameter management server 320 has received a signal indicating that operation is OK from the semiconductor factory management system 208, the light source parameter management server 320 proceeds to step S26.
[0150] In step S26, the light source parameter management server 320 outputs the priority target parameter information to the light source #k. After step S26, the light source parameter management server 320 proceeds to step S27 in FIG.
[0151] In step S27, the light source parameter management server 320 outputs an operation signal for the light source #k.
[0152] In step S28, the light source parameter management server 320 acquires the operating data of the light source #k.
[0153] In step S29, the light source parameter management server 320 estimates maintenance information for setting priority target parameter information from the operation data of the light source #k. The subroutine of step S29 will be described later (FIG. 15).
[0154] In step S30, the light source parameter management server 320 outputs the estimated maintenance information of the light source #k to the semiconductor factory management system 208.
[0155] In step S31, the light source parameter management server 320 determines whether or not a light source operation stop signal has been received from the semiconductor factory management system 208. If the determination result in step S31 is No, the light source parameter management server 320 returns to step S28.
[0156] If the determination result in step S31 is Yes, the light source parameter management server 320 proceeds to step S32. In step S32, the light source parameter management server 320 outputs a signal to stop operation of the light source #k. In the semiconductor factory, maintenance of the light source #k is performed based on the maintenance information. After step S32, the light source parameter management server 320 ends the flowchart in FIG.
[0157] Fig. 14 is a flowchart showing an example of a subroutine applied to step S22 in Fig. 12. When the flowchart in Fig. 14 starts, in step S41, the light source parameter management server 320 outputs priority target parameter information to the light source #k.
[0158] In step S42, the light source parameter management server 320 outputs an adjustment operation signal for the light source #k. Upon receiving the adjustment operation signal, the light source #k starts adjustment operation and outputs various data (adjustment operation data) obtained by performing the adjustment operation to the light source parameter management server 320.
[0159] In step S43, the light source parameter management server 320 acquires the adjusted operation data of the light source #k.
[0160] In step S44, the light source parameter management server 320 performs a process of estimating maintenance information to be set in the priority target parameter information from the operation data of the light source #k. In this case, the "operation data of the light source #k" is the "adjustment operation data of the light source #k" acquired in step S43. The subroutine of the process applied in step S44 may be the same as the subroutine applied in step S29 of FIG.
[0161] After step S44, the light source parameter management server 320 returns to the flowchart of FIG.
[0162] FIG. 15 is a flowchart showing an example of a subroutine applied to step S29 in FIG. 13 and step S44 in FIG.
[0163] When the flowchart in FIG. 15 starts, in step S51, the light source parameter management server 320 acquires the operating data of the light source #k.
[0164] In step S52, the light source parameter management server 320 calls a learning model used in the process of estimating the deterioration level of the consumable. This learning model may be a trained machine learning model (inference model) composed of a neural network created by performing machine learning using supervised learning data so as to input the operation data of the light source and output the deterioration level of the consumable. The technology disclosed in Patent Document 1 may be adopted for the method of creating the learning model that estimates the deterioration level of the consumable from the operation data of the light source and the method of calculating the number of pulses until maintenance from the deterioration level output as the inference result of the learning model.
[0165] Patent Document 1 describes the following method: That is, the machine learning method for creating a learning model for predicting the life of a consumable of a laser device includes the steps of: acquiring first life-related information including data of life-related parameters of the consumable recorded corresponding to different numbers of oscillation pulses during a period from when the consumable is started to be used until it is replaced; dividing the first life-related information into a plurality of levels representing the degree of deterioration of the consumable according to the number of oscillation pulses, creating training data in which the first life-related information is associated with the levels representing the degree of deterioration; performing machine learning using the training data to create a learning model for predicting the degree of deterioration of the consumable from the data of the life-related parameters; and storing the created learning model.
[0166] Furthermore, Patent Document 1 describes a consumables management device for a laser device, which includes a learning model storage unit that stores a learning model created by implementing the above-mentioned machine learning method, an information acquisition unit that receives a request signal for a life prediction process for a consumable to be replaced in the laser device and acquires current second life-related information for the consumable to be replaced, a life prediction unit that calculates the life and remaining life of the consumable to be replaced based on the learning model of the consumable to be replaced and the second life-related information, and an information output unit that notifies an external device of the information on the life and remaining life of the consumable to be replaced obtained by the calculation.
[0167] The light source parameter management server 320 may have the same functions as the consumables management device described in Patent Document 1.
[0168] In step S53, the light source parameter management server 320 inputs the operating data of the light source #k into the learning model to estimate the degree of deterioration.
[0169] In step S54, the light source parameter management server 320 calculates the number of pulses remaining until the maintenance of each consumable item is required from the estimated degree of deterioration.
[0170] In step S55, the light source parameter managing server 320 outputs the remaining number of pulses until maintenance as maintenance information. After step S55, the light source parameter managing server 320 returns to the flowcharts shown in FIGS.
[0171] In addition, when the maintenance life of the consumables differs depending on the priority target parameter information described later, the learning model used in the flowchart of Fig. 15 is created based on the supervised learning data for each mode. Then, the light source parameter management server 320 may call up the learning model corresponding to each priority target parameter.
[0172] The light source parameter management server 320 is an example of a "light source parameter information management device" in this disclosure. A method including steps executed by the light source parameter management server 320 is an example of a "light source parameter information management method" in this disclosure.
[0173] 6.3 Effects According to the first embodiment, the data analysis server 310 is used to derive optimal priority target parameter information for the exposure process of the lithography system #k, and this priority target parameter information is set for the light source #k. Maintenance information estimated when the light source #k is operated is then output to the semiconductor factory management system 208, thereby making it possible to efficiently manage the operation or shutdown of the lithography system #k.
[0174] According to the first embodiment, it becomes possible to operate the light source so as to maintain specific target parameter information that is considered particularly important for an individual user or semiconductor process.
[0175] As a result, it is possible to improve the yield of semiconductor manufacturing, and reduce costs, etc. Also, optimal exposure for the semiconductor process becomes possible.
[0176] 6.4 Other In the example of the first embodiment, the data analysis server 310 and the light source parameter management server 320 are described by their respective functions, but it is not necessary to separate the functions of these servers, and these two functions may be realized by the same server. Also, the functions of both servers may be shared by the light source management system 206 or the exposure apparatus management system 204. Also, the function of the data analysis server 310 may be provided by the exposure apparatus management system 204, the light source parameter management server 320, or the light source management system 206.
[0177] Furthermore, the output results of the data analysis server 310 or the light source parameter management server 320 may be output to a display device (not shown) or the like and displayed so that the operator can understand it.
[0178] Furthermore, the priority target parameter information may be output to the exposure apparatus #k via the exposure apparatus management system 204. The priority target parameter information may then be sent from the exposure apparatus #k to the light source #k to control the light source #k.
[0179] 7. Embodiment 2 7.1 Configuration 16 is a block diagram showing an overall process flow of a semiconductor manufacturing system according to embodiment 2. The system configuration of embodiment 2 may be similar to that of embodiment 1 (FIG. 8). In embodiment 2, in addition to the configuration and functions thereof described in embodiment 1, a mechanism is added for estimating recommended target parameter information regarding parameters different from the priority target parameters and providing the information to an external device such as a semiconductor factory management system 208.
[0180] 7.2 Operation Regarding Fig. 16, differences from Fig. 9 will be described. Fig. 16 shows an example of a case where recommended target parameter information required for setting priority target parameter information is output in addition to the flow of Fig. 9.
[0181] 16, when setting the priority target parameter information of the light source #k, the light source parameter management server 320 estimates the maintenance information and further estimates the recommended target parameter information and outputs them to an external device. The recommended target parameter information includes at least one of the target spectrum characteristic parameter information, the target output characteristic parameter information, and the target consumption amount parameter information, for example.
[0182] The recommended target parameter information of the light source #k is output to the data analysis server 310 via the semiconductor factory management system 208 .
[0183] The data analysis server 310 analyzes the correlation between the recommended target parameters and the exposure performance parameters, determines whether operation is OK / NOK when the recommended target parameter information is set to the light source #k, and outputs the determination result to the semiconductor factory management system 208.
[0184] Furthermore, the semiconductor factory management system 208 judges whether the operation of the light source #k is OK / NOK based on the maintenance information, the recommended target parameter information, and other management information 209 of the semiconductor factory.
[0185] If an OK judgment is obtained, priority target parameter information and recommended target parameter information are set in the light source #k via the light source management system 206, and the light source #k is controlled so as to satisfy these target parameter information.
[0186] 7.2.1 Example of data analysis server processing 17 is a flowchart showing a flow of checking recommended target parameter information in the data analysis server 310 of embodiment 2. When determining whether or not to accept the received recommended target parameter information, the semiconductor factory management system 208 sends the recommended target parameter information to the data analysis server 310, has the data analysis server 310 check the suitability of the recommended target parameter information, and receives the result of the check.
[0187] When the flowchart in FIG. 17 starts, in step S60, the data analysis server 310 receives recommended target parameter information for light source #k.
[0188] In step S62, the data analysis server 310 analyzes the relationship between the range of values of each parameter in the recommended target parameter information of the light source #k and the range of values of the parameters of the exposure performance.
[0189] Then, in step S63, the data analysis server 310 judges whether or not the parameter value of the exposure performance is within an allowable range within the range of each parameter value of the recommended target parameter information (see FIG. 18).
[0190] If the determination result in step S63 is Yes, the data analysis server 310 proceeds to step S64. In step S64, the data analysis server 310 outputs an OK signal indicating that the recommended target parameter information is appropriate (OK).
[0191] On the other hand, if the determination result in step S63 is No, the data analysis server 310 proceeds to step S65. In step S65, the data analysis server 310 outputs an NG signal indicating that the recommended target parameter information is inappropriate (NG).
[0192] After step S64 or step S65, the data analysis server 310 ends the flow chart of FIG.
[0193] Fig. 18 is a graph showing an example of an analysis of the relationship between the recommended target parameters and the parameters of the exposure performance. The horizontal axis of Fig. 18 represents the recommended target parameters, and the vertical axis represents the parameters of the exposure performance. By data analysis, for example, as shown in Fig. 18, the relationship between the parameter values of the exposure performance and the recommended target parameter values is obtained. When the lower limit value and the upper limit value indicating the allowable range for the parameter values of the exposure performance are specified, it is possible to determine whether or not the parameter value of the corresponding exposure performance is within the allowable range in the range of the recommended target parameter values.
[0194] 7.2.2 Example of processing by the light source parameter management server Figures 19 and 20 are flowcharts showing an example of processing contents in the light source parameter management server 320 of embodiment 2. In the flowcharts of Figures 19 and 20, steps S22, S23, S26, S29, and S30 in the flowcharts of Figures 12 and 13 are replaced with steps S72, S73, S76, S79, and S80, respectively. Steps S70, S74, S75, S77, S78, S81, and S82 in Figure 13 are similar to steps S20, S24, S25, S27, S28, S31, and S32 in the flowcharts of Figures 13 and 14, respectively, and therefore overlapping explanations will be omitted.
[0195] In step S72, the light source parameter management server 320 estimates maintenance information and recommended target parameter information of the light source #k when the light source #k is set as the priority target parameter information. The subroutine of step S72 will be described later (FIG. 21).
[0196] In step S73, the light source parameter management server 320 outputs the estimated maintenance information and the recommended target parameter information of the light source #k to the semiconductor factory management system 208.
[0197] If it is determined in step S74 that the light source parameter management server 320 has received an OK signal permitting operation from the semiconductor factory management system 208, the light source parameter management server 320 proceeds to step S76.
[0198] In step S76, the light source parameter management server 320 outputs the priority target parameter information and the recommended target parameter information to the light source #k. After step S76, the light source parameter management server 320 proceeds to step S77 in FIG.
[0199] After acquiring the operation data of the light source #k in step S78, the light source parameter management server 320 estimates the maintenance information and the recommended target parameter information to be set as the priority target parameter information from the operation data of the light source #k in step S79. The subroutine of step S79 will be described later (FIG. 22).
[0200] In step S80, the light source parameter management server 320 outputs the estimated maintenance information of the light source #k and the recommended target parameter information to the semiconductor factory management system 208. Subsequent steps S81 and S82 are similar to steps S31 and S32.
[0201] Fig. 21 is a flowchart showing an example of a subroutine applied to step S72 in Fig. 19. Steps S91, S92, and S93 in the flowchart in Fig. 21 are similar to steps S41, S42, and S43, respectively, in the flowchart in Fig. 14, so duplicated explanations will be omitted. In the flowchart in Fig. 21, step S44 in Fig. 14 is changed to step S94.
[0202] In step S94, the light source parameter management server 320 performs a process of estimating maintenance information and recommended target parameter information when setting priority target parameter information from the operation data of the light source #k. In this case, the "operation data of the light source #k" is the "adjustment operation data of the light source #k" acquired in step S93. The subroutine of the process applied in step S94 may be the same as the subroutine applied in step S79 of FIG. 20.
[0203] Fig. 22 is a flowchart showing an example of a subroutine applied to step S79 in Fig. 20 and step S94 in Fig. 21. Steps S101, S102, S103, S104, and S105 in the flowchart in Fig. 22 are similar to steps S51, S52, S53, S54, and S55 in the flowchart in Fig. 15, respectively, and therefore redundant explanations will be omitted. In the flowchart in Fig. 22, steps S106 and S107 are added after step S55 in Fig. 15.
[0204] In step S106, the light source parameter management server 320 obtains the range of the performance parameter values of each light source from the operation data of the light source #k, and estimates recommended target parameter information. The subroutine of step S106 will be described later (FIG. 23).
[0205] In step S107, the light source parameter management server 320 outputs the estimated recommended target parameter information of the light source #k. After step S107, the light source parameter management server 320 returns to the flowcharts shown in FIGS.
[0206] Fig. 23 is a flowchart showing an example of a subroutine applied to step S106 in Fig. 22. In step S121 in Fig. 23, the light source parameter management server 320 acquires operating data of the light source #k.
[0207] In step S122, the light source parameter management server 320 calculates the average value Pav and its standard deviation value Pσ of each performance parameter value from the operation data of the light source #k. Each performance parameter value is a value of each parameter expressing the performance of the pulsed laser light. For example, there are pulse energy E and its stability Eσ, spectral linewidth Δλ and its stability Δλσ, etc.
[0208] In step S123, the light source parameter management server 320 multiplies the standard deviation value Pσ of each performance parameter by a safety factor K. The safety factor K may be, for example, a value in the range of 3 to 5. When the safety factor K is 3, the range is ±3σ from the average value.
[0209] In step S124, the light source parameter management server 320 outputs the average value Pav of each performance parameter value and its range K·Pσ as recommended target parameter information.
[0210] After step S124, the light source parameter management server 320 ends the flowchart in FIG. 23, and returns to the flowchart in FIG.
[0211] Although FIG. 23 shows an example of “±K·Pσ” as an expression of the range of the performance parameter value, the range is not limited to this, and may be expressed, for example, as ±K·(Pσ / Pav)·100(%).
[0212] 7.3 Effects According to the second embodiment, not only the maintenance information but also the recommended target parameter information is estimated based on the priority target parameter information, and these pieces of information are output to the semiconductor factory management system 208. This makes it possible for the semiconductor factory management system 208 to comprehensively consider these pieces of information and make an OK / NOK determination regarding the operation of the light source #k.
[0213] Furthermore, according to the second embodiment, recommended target parameter information requiring specification relaxation is presented and exposure can be performed after confirming whether operation is OK or NO, so that a decrease in the yield of the exposure process can be suppressed.
[0214] Furthermore, according to embodiment 2, the light source #k can be operated by setting recommended target parameter information that allows for relaxation of specifications, so that the decrease in the number of remaining pulses until maintenance and the increase in gas consumption can be suppressed compared to when the light source #k is operated without relaxing the specifications.
[0215] 7.4 Other In the example of embodiment 2, semiconductor factory management system 208 judges OK / NOK based on management information 209 of other semiconductor factories, but this is not limited thereto. Recommended target parameter information may be output to exposure apparatus management system 204, which may then judge whether exposure is OK / NOK for exposure apparatus #k. Semiconductor factory management system 208 may then receive the judgment result and make a comprehensive judgment of OK / NOK.
[0216] 8. Embodiment 3 8.1 Configuration The system configuration and the overall flow of the embodiment 3 may be similar to those of the embodiment 2. The embodiment 3 is different from the embodiment 2 in that the light source parameter management server 320 changes (resets) the operation control target parameter value of the light source #k based on the priority target parameter information of the light source #k.
[0217] Default operation control parameter values are set for the light source #k, and when priority target parameter information is specified, the parameter values associated with this are reset.
[0218] 8.2 Operation Fig. 24 is a flowchart showing an example of processing contents in the light source parameter management server 320 of embodiment 3. In Fig. 24, the same step numbers are assigned to steps common to Fig. 19, and duplicated explanations are omitted. The flowchart shown in Fig. 24 includes step S71 between step S70 and step S72 in Fig. 19.
[0219] In step S71, the light source parameter management server 320 resets the operation control target parameter value of the light source #k based on the priority target parameter information of the light source #k. The other steps may be the same as those in Fig. 19. In addition, the flow chart after step S76 may be the same as that in Fig. 20.
[0220] Fig. 25 is a flowchart showing an example of a subroutine applied to step S71 in Fig. 24. When the flowchart in Fig. 25 starts, in step S131, the light source parameter management server 320 selects operation control target parameters of the light source #k based on the priority target parameter information.
[0221] In step S132, the light source parameter management server 320 calls data on the relationship between the priority target parameters and the operation control target parameters of the light source #k. The light source parameter management server 320 stores table data or data such as an approximate curve showing the relationship between the priority target parameters and the operation control target parameters of the light source #k, and calls this relationship data.
[0222] In step S133, the light source parameter management server 320 obtains, from the called data, the operation control target parameter value Po that approaches the priority target parameter value Pt (see FIG. 26).
[0223] In step S134, the light source parameter management server 320 outputs the operation control target parameter value Po to the light source #k. After step S134, the light source parameter management server 320 returns to the flowchart of FIG.
[0224] Fig. 26 is an example of a graph showing the relationship between the priority target parameter and the operation control parameter. In step S132 of Fig. 25, the light source parameter management server 320 calls up data showing the relationship as shown in Fig. 26. Then, in step S133, as shown in Fig. 26, the operation control target parameter value Po corresponding to the priority target parameter value Pt is obtained.
[0225] 8.3 Effects According to the third embodiment, when the priority target parameter information for the light source #k is set, other operation control target parameter values related to the setting are reset, thereby realizing an operation that satisfies the priority target parameter information.
[0226] 9. Embodiment 4 9.1 Configuration The fourth embodiment is a more specific example of the third embodiment. The system configuration and the overall flow of the fourth embodiment may be the same as those of the first embodiment. The fourth embodiment illustrates the case of operating in each of the light performance priority mode, the consumable life extension mode, and the consumption reduction mode.
[0227] 9.2 Light performance priority mode operation In the optical performance priority mode operation, there may be a plurality of modes in which the viewpoint of the priority performance (the performance to be emphasized) is different, for example, when the performance of the spectral line width is prioritized, when the performance of the pulse energy (output) is prioritized, when the performance of the energy stability is prioritized, etc. A specific example of the operation when the operation in the mode in which such a specific optical performance is prioritized is requested is shown below.
[0228] 9.2.1 Example of when the spectral linewidth Δλ is the priority target parameter 9.2.1.1 Operation Here, a case will be described in which the lithography system #k is performing exposure for a critical layer process. Since the resolution of the exposure tool #k needs to be kept high in the critical layer process, it is presumed that the target parameters (e.g., the spectral linewidth Δλ) indicating the target spectral characteristics need to be managed with priority. In this case, the data analysis server 310 executes each step of the flowchart shown in FIG. 27.
[0229] 27 is a flowchart showing an example of the processing contents in the data analysis server 310 of embodiment 4. Step S141 is similar to step S11 in FIG.
[0230] In step S142, the data analysis server 310 analyzes the correlation between the spectral linewidth Δλ of the light source #k and a parameter related to the CD of the resist pattern formed by the exposure tool #k.
[0231] In step S144, the data analysis server 310 calculates a regression curve between the spectral linewidth Δλ of the light source #k and the CD of the resist pattern formed by the exposure tool #k.
[0232] In step S145, the data analysis server 310 calculates, from the calculated regression curve, a target value and its range of the spectral linewidth Δλ of the light source #k for which the parameter CD value is within an allowable range.
[0233] In step S146, the data analysis server 310 outputs the calculated target spectral linewidth Δλtp of the light source #k and its range (Δλtp±ΔΔλtp) as priority target parameter information of the light source #k. The target spectral linewidth Δλtp and its range (Δλtp±ΔΔλtp) are an example of "spectral linewidth parameter information" in this disclosure.
[0234] After step S146, the flow chart of FIG. 27 ends.
[0235] FIG. 28 is a graph showing an example of a method for obtaining a target spectral linewidth Δλt and its range using a regression curve. The horizontal axis of FIG. 28 represents CD, and the vertical axis represents the spectral linewidth Δλ of the light source. The regression curve RC2 is a curve showing the correlation between CD and the spectral linewidth Δλ. Based on the target value CDt of CD and the allowable lower limit value CDmin and the allowable upper limit value CDmax showing its allowable range, the target spectral linewidth Δλt, which is the target value of the spectral linewidth Δλ of the light source, and the allowable lower limit value Δλt-ΔΔλt and the allowable upper limit value Δλt+ΔΔλt showing its allowable range can be obtained from the regression curve RC. A set of data including the target spectral linewidth Δλt and its range (Δλt±ΔΔλt) obtained in this way can become the target spectral linewidth Δλtp and its range (Δλtp±ΔΔλtp) as the priority target parameter information of the light source.
[0236] When the exposure process of the light source #k is a critical layer, it is necessary to narrow the spectral line width Δλ for exposure.
[0237] Fig. 29 is a flowchart showing an example in which the flowchart of Fig. 25 is applied to a case in which the spectral linewidth Δλ is a priority target parameter. When the spectral linewidth Δλ is the priority target parameter, the flowchart of Fig. 29 is applied as a subroutine of step S71 in Fig. 24.
[0238] In step S151, the light source parameter management server 320 calls data on the relationship between the spectral linewidth Δλ and the lens spacing LD of the wavefront adjuster 107. The lens spacing LD is the spacing between the concave lens 171 and the convex lens 172 that configure the wavefront adjuster 107.
[0239] In step S152, the light source parameter management server 320 obtains the lens distance LD=Ct that provides the central value (target value Δλt) of the spectral linewidth Δλ, which is the priority target parameter (see FIG. 30).
[0240] In step S153, the light source parameter management server 320 outputs the initial value LC=Ct of the lens distance LD to the light source #k as an operation control target parameter so that the spectral linewidth Δλ becomes the central value Δλt.
[0241] In step S154, the light source parameter management server 320 outputs the spectral linewidth Δλtp to the light source #k as the priority target parameter information. The light source parameter management server 320 may also output the spectral linewidth Δλtp to the exposure tool #k as the priority target parameter information. After step S154, the light source parameter management server 320 returns to the flowchart of FIG.
[0242] Fig. 30 is an example of a graph showing the relationship between the spectral linewidth Δλ and the lens spacing LD of the wavefront tuning device 107. The horizontal axis of Fig. 30 represents the spectral linewidth Δλ, and the vertical axis represents the lens spacing LD. Using data showing the relationship between parameters such as that in Fig. 30, the lens spacing Ct corresponding to the target spectral linewidth Δλt can be obtained.
[0243] 9.2.1.2 Effects In this example, by setting the lens spacing of the wavefront tuner 107 to an initial value Ct, it becomes possible to operate the light source to set the prioritized target spectral linewidth Δλtp in a short period of time.
[0244] According to this example, it is possible to operate the light source with a narrow spectral line width that matches the exposure process and with the range limited, so that the yield due to the exposure process of the critical layer is improved.
[0245] 9.2.1.3 Other In this example, only the target spectral linewidth, which is a priority target parameter, is narrowed. In this case, the margin of pulse energy is reduced, so the number of remaining pulses until the maintenance of consumables is reduced. In this regard, as described in the second embodiment, recommended target parameter information may be estimated for other parameters whose specifications can be relaxed.
[0246] The maintenance information for the consumables may be estimated based on the operating data obtained by performing adjusted oscillation in a state in which the priority target parameter information is set in the light source #k.
[0247] Also, in this example, the spectral linewidth Δλ is changed by changing the lens spacing between the concave lens and the convex lens of the wavefront tuning device 107. However, the present invention is not limited to this example, and for example, the magnification of the beam expansion by the first prism 131 and the second prism 132 of the LNM 102 may be adjusted by rotating these two prisms.
[0248] 29 (step S154), data is output to light source #k, but data may be output to exposure tool #k. During actual exposure, this data may be output from exposure tool #k to light source #k as priority target parameter values.
[0249] 9.2.2 When pulse energy is the priority target parameter 9.2.2.1 Example of a case where a high pulse energy is a priority and exposure can be performed with a wide spectral linewidth Δλ When the exposure process step of light source #k is for rough layer or for forming a resist pattern on a stepped substrate requiring a large depth of focus, exposure must be performed under the following conditions (conditions A and B).
[0250] Condition A: In order to increase the depth of focus, exposure is performed with a wide spectral linewidth Δλ.
[0251] Condition B: Furthermore, when exposing a resist with low resist sensitivity or a thick resist, the pulse energy of light source #k is set high in order to maintain the throughput.
[0252] 9.2.2.1.1 Behavior FIG. 31 shows an example of a processing flow in the light source parameter management server 320 when light source #k is operated with the priority target parameter being pulse energy, the target value Etp being set to a high pulse energy value, and the recommended target parameter being spectral linewidth, the target value Δλtr being set to a wide spectral linewidth value.
[0253] Fig. 31 is a flowchart showing an example in which the flowchart of Fig. 25 is applied to a mode in which high pulse energy is prioritized. When pulse energy is the priority target parameter, the flowchart of Fig. 31 is applied as a subroutine of step S71 of Fig. 24.
[0254] In step S161, the light source parameter management server 320 sets a target value Etp of the pulse energy, which is a priority target parameter.
[0255] In step S 162 , the light source parameter management server 320 calls the relationship data between the pulse energy E and the lens distance LD of the wavefront adjuster 107 .
[0256] In step S163, the light source parameter management server 320 uses the called relational data to find the lens distance LD=Ct at which the pulse energy E, which is the priority target parameter, reaches the target value Etp (see FIG. 32).
[0257] In step S164, the light source parameter management server 320 outputs the initial lens distance LC=Ct of the operation control target parameters to the light source #k.
[0258] In step S165, the light source parameter management server 320 calls the relationship data between the pulse energy E and the spectral linewidth Δλ.
[0259] In step S166, the light source parameter management server 320 uses the called relational data to obtain a spectral linewidth Δλtr at which the pulse energy E, which is a priority target parameter, reaches a target value Etp (see FIG. 33). Δλtr is a target value of the recommended target spectral linewidth.
[0260] In step S167, the light source parameter management server 320 registers the spectral linewidth Δλ as recommended target parameter information.
[0261] In step S168, the light source parameter management server 320 outputs the target spectral bandwidth Δλtr to the light source #k as the operation control target parameter value.
[0262] In step S169, the light source parameter management server 320 outputs the target pulse energy Etp to the light source #k as a priority target parameter value.
[0263] The light source parameter management server 320 may also output at least one of the target spectral linewidth Δλtr and the target pulse energy Etp to the exposure tool #k.
[0264] After step S169, the light source parameter management server 320 returns to the flowchart of FIG.
[0265] Fig. 32 is an example of a graph showing the relationship between the pulse energy E and the lens distance LD of the wavefront tuning device 107. The horizontal axis of Fig. 32 represents the pulse energy E, and the vertical axis represents the lens distance LD. Using the relationship data as shown in Fig. 32, the lens distance Ct corresponding to the target pulse energy value Etp can be obtained.
[0266] Fig. 33 is an example of a graph showing the relationship between pulse energy E and spectral linewidth Δλ. The horizontal axis of Fig. 33 represents pulse energy E, and the vertical axis represents the spectral linewidth Δλ. Using the relationship data as shown in Fig. 33, a target spectral linewidth Δλtr corresponding to a target pulse energy value Etp can be obtained.
[0267] 9.2.2.1.2 Effects The method described with reference to Figs. 31 to 33 enables operation at high pulse energy, which is the target value of the priority target parameter.
[0268] Furthermore, according to this method, although the spectral line width Δλ becomes wider, it becomes possible to perform exposure in cases where the exposure process is rough layered, or where a resist pattern is formed on a substrate having a step that requires a focal depth, or in the case of a thick-film resist.
[0269] In this example, the spectral linewidth is broadened as a means for increasing the target pulse energy, so that the number of pulses remaining until the maintenance of consumables is reduced and the amount of gas consumed is prevented from increasing.
[0270] 9.2.2.1.3 Miscellaneous 31 (steps S168, S168), the operation control target parameter value and the priority target parameter value are output to the light source #k, but this information may be output to the exposure apparatus #k. During actual exposure, these target parameter values may be output from the exposure apparatus #k to the light source #k.
[0271] In this example, the lens spacing LD of the wavefront tuning device 107 is changed to change the spectral linewidth Δλ. However, the present invention is not limited to this example, and for example, the spectral linewidth Δλ may be widened and the pulse energy may be provided with a margin by reducing the beam expansion magnification by rotating the first prism 131 and the second prism 132 of the LMN 102, respectively.
[0272] 9.2.2.2 Example of a case where a high pulse energy is a priority and exposure is possible with relaxed pulse energy stability specifications 9.2.2.2.1 Operation Fig. 34 shows an example of a flowchart in the case where the priority target parameter is the pulse energy, the value of the high pulse energy is set to the target value Etp, and the specification range of the parameter for pulse energy stability can be relaxed. When the pulse energy E becomes the priority target parameter and exposure is possible with the specification for pulse energy stability relaxed, the flowchart in Fig. 34 can be applied instead of the flowchart in Fig. 31.
[0273] In step S171, the light source parameter management server 320 sets a target value Etp of the pulse energy, which is a priority target parameter.
[0274] In step S172, the light source parameter management server 320 calls up data on the relationship between the halogen gas partial pressure Hgc and the pulse energy E, and the relationship between the halogen gas partial pressure Hgc and the pulse energy stability Eσ.
[0275] In step S173, the light source parameter management server 320 uses the called relational data to determine the target value Hgct of the halogen gas partial pressure at which the pulse energy E becomes maximum (see FIG. 35).
[0276] In step S174, the light source parameter management server 320 outputs the target value Hgct of the halogen gas partial pressure to the light source #k as an operation control target parameter.
[0277] In step S177, the light source parameter management server 320 registers the pulse energy stability Eσ as information on the recommended target parameters.
[0278] In step S179, the light source parameter management server 320 outputs the target pulse energy Etp to the light source #k as a priority target parameter value. The light source parameter management server 320 may also output the target pulse energy Etp to the exposure tool #k.
[0279] After step S179, the light source parameter management server 320 returns to the flowchart of FIG.
[0280] Fig. 35 is an example of a graph showing the relationship between halogen gas partial pressure Hgc and pulse energy E, and the relationship between halogen gas partial pressure Hgc and pulse energy stability Eσ. The horizontal axis of Fig. 35 represents the halogen gas partial pressure Hgc in the chamber 100, the vertical axis on the left side represents the pulse energy E, and the vertical axis on the right side represents the pulse energy stability Eσ.
[0281] In Fig. 35, the thick mountain-shaped curve is a graph showing the relationship between the halogen gas partial pressure Hgc and the pulse energy E, and the thin valley-shaped curve is a graph showing the relationship between the halogen gas partial pressure Hgc and the pulse energy stability Eσ. Using the relationship data as shown in Fig. 35, the halogen gas partial pressure Hgct and the pulse energy stability Eσr corresponding to the maximum value Emax of the pulse energy E can be obtained.
[0282] 9.2.2.2.2 Effects 34, the pulse energy E can be increased by controlling the halogen gas partial pressure Hgc in the chamber 100 so that the halogen gas partial pressure Hgct becomes the maximum value Emax of the pulse energy E. This improves the exposure throughput.
[0283] 9.2.2.2.3 Miscellaneous In the example of Figure 34, the target halogen gas partial pressure Hgct, which is an operation control parameter, is determined so that the halogen gas partial pressure Hgc maximizes the pulse energy E, so there is a possibility that the pulse energy stability Eσ will deteriorate to the value Eσr shown in Figure 35.
[0284] In this case, the pulse energy stability Eσ may be registered as information on recommended target parameters, and the recommended target parameter information may be estimated from the operating data during the adjusted oscillation and output to an external device.
[0285] In addition, when the range of the target parameter of the pulse energy stability cannot be relaxed, the operation control target parameter value may be reset by increasing the gas consumption per pulse Gwt, which is the operation control target parameter of the light source #k, for example. This makes it possible to maintain the number of remaining pulses for the maintenance of each consumable.
[0286] As another example of the light performance priority mode, there may be a mode in which the stability of pulse energy is prioritized. In this case, as shown in Fig. 36, the target halogen gas partial pressure Hgct may be set as the operation control target parameter so that the value of the pulse energy stability Eσ is the smallest (so that the stability is the highest). However, in this case, it becomes difficult to output the pulse energy E, so that the operation of the light source #k is possible by allowing a decrease in the number of pulses remaining until the maintenance of the consumables is required or by increasing the target gas consumption per pulse Gwt.
[0287] 9.2.2.3 Example of a case where high duty cycle operation is a priority and exposure is possible with relaxed pulse energy stability specifications 9.2.2.3.1 Behavior The light source of an exposure tool generally performs a burst operation pattern in which oscillation (oscillation at a predetermined repetition frequency) and pause are repeated to expose a wafer, as shown in FIG.
[0288] In this case, the duty ratio is expressed by the following formula.
[0289] Duty ratio = oscillation time / (oscillation time + pause time) x 100 (%) Fig. 37 is a graph showing the relationship between the duty ratio and the pulse energy. As shown in Fig. 37, generally, under the same conditions (when the same gas pressure and the same charging voltage are applied), the pulse energy of the light output from the light source tends to decrease as the duty ratio increases. Therefore, when operating a light source at a high duty ratio, it is necessary to operate it under conditions where the pulse energy of the light source is high.
[0290] Moreover, the same tendency as the relationship shown in FIG. 37 can be obtained even if the number of pulses per unit time is plotted on the horizontal axis and the pulse energy on the vertical axis.
[0291] Thus, as the number of pulses per unit time increases, the pulse energy decreases, and so the measures to compensate for pulse energy when operating a light source with an increased number of pulses per unit time are similar to those for high duty cycles.
[0292] Fig. 38 shows an example of a flowchart in the case where the duty ratio is the priority target parameter and the parameter range of the pulse energy stability can be relaxed. When the duty ratio Dr is the priority target parameter and exposure can be performed with the specification for the pulse energy stability relaxed, the flowchart in Fig. 38 can be applied instead of the flowchart in Fig. 31.
[0293] In step S181, the light source parameter management server 320 sets a priority target parameter Drtp. The priority parameter, the duty ratio Drtp of the burst pattern, is a duty ratio calculated from the operation pattern when exposure is about to take place.
[0294] Steps S182, S183, S184, and S187 may be similar to steps S172, S173, S174, and S177 in FIG.
[0295] In step S189 after step S187, the light source parameter management server 320 outputs the target duty ratio Drtp to the light source #k as priority target parameter information. The light source parameter management server 320 may also output the target duty ratio to the exposure tool #k. The exposure tool outputs a trigger pattern to the light source #k so that the light source #k performs exposure with a burst exposure pattern close to the target duty ratio Drtp.
[0296] 9.2.2.3.2 Effects By controlling the halogen gas partial pressure in the chamber 100 so that the halogen gas partial pressure is at a maximum pulse energy, operation at a high duty ratio becomes possible, thereby improving exposure throughput.
[0297] 9.2.2.3.3 Miscellaneous In this example, the target halogen gas partial pressure Hgct is determined so that the pulse energy is maximized, so that the pulse energy stability may be deteriorated. Therefore, the pulse energy stability may be registered as recommended target parameter information, and the recommended target parameter information may be estimated from the operating data during the regulated oscillation and output to an external device.
[0298] In addition, when the target parameter of the pulse energy stability cannot be relaxed, for example, the gas consumption per pulse Gwt, which is the operation control target parameter of the light source #k, may be increased and reset, thereby making it possible to maintain the number of remaining pulses for the maintenance of the consumables.
[0299] In this example, the duty ratio is used as the priority target parameter, but the present invention is not limited to this example. For example, the output per unit time may be set as the priority target parameter.
[0300] In general, in the case of an excimer laser, when the duty ratio or the number of pulses per unit time is high, it becomes difficult to output pulse energy. Therefore, by executing a process flow as shown in Fig. 31 or Fig. 38, for example, by widening the spectral line width, or by relaxing the range of the parameter of pulse energy stability, or by increasing the gas consumption amount Gw per pulse, or by a combination of these, the operation control target parameter is set under the condition that the pulse energy can be maintained. Then, a value with a high duty ratio or a large number of pulses per unit time may be set as the target priority parameter information to operate the light source #k.
[0301] 9.3 Consumable Life Extension Mode Operation Some semiconductor factories may wish to extend the period between maintenance of consumables due to production plans, maintenance plans, etc. In order to extend the life of consumables, the operation control target parameters of light source #k may be set so that the pulse energy is higher for the same gas pressure and the same charging voltage.
[0302] 9.3.1 Example of resetting the target halogen gas partial pressure 9.3.1.1 Operation 39 is an example of a process flow applied in the case of consumable life extension mode operation. In the case of consumable life extension mode operation, the flowchart in FIG. 39 is applied to step S71 in FIG.
[0303] In step S191, the light source parameter management server 320 selects an operating parameter that can extend the life of consumables. One of the operating parameters that increases the pulse energy when the gas pressure and charging voltage are the same is the halogen gas partial pressure (see FIG. 35). In this example, the light source parameter management server 320 selects the halogen gas partial pressure.
[0304] Steps S192, S193, S194, and S197 may be similar to steps S182, S183, S184, and S187 in FIG. 38, respectively.
[0305] After step S197, the light source parameter management server 320 returns to the flowchart of FIG.
[0306] 9.3.1.2 Effects As shown in Fig. 39, by resetting the target halogen gas partial pressure as the operation control target parameter of light source #k so that the pulse energy becomes the maximum energy, it is possible to increase the pulse energy when the same gas pressure and the same charging voltage are set. This margin of pulse energy can be allocated to extending the number of remaining pulses until the maintenance of consumables is required.
[0307] In this case, the pulse energy and pulse energy stability may be calculated based on data during adjustment operation as recommended target parameter information, and these may be output to an external device.
[0308] 9.3.2 Example of resetting target spectral linewidth As explained in Fig. 33, by widening the target spectral linewidth as the operation control target parameter of light source #k, it is possible to increase the pulse energy when the same gas pressure and the same charging voltage are applied. This margin of pulse energy can be allocated to extending the number of remaining pulses until the maintenance of consumables is required.
[0309] In this case, the spectral linewidth and the spectral linewidth stability may be calculated based on data during the adjustment operation as the recommended target parameter information, and these may be output to an external device.
[0310] 9.3.3 Example of reconfiguring gas consumption When it is not possible to relax the specifications of target parameters such as pulse energy stability or spectral linewidth, the gas consumption per pulse Gwt, which is an operation control target parameter of the light source #k, may be increased and reset as the recommended target parameter information. This makes it possible to extend the number of remaining pulses until the maintenance of the consumables. However, in this case, the set gas consumption per pulse Gwt may be output to an external device as the recommended target parameter information. The maintenance information may be output to an external device based on data during adjustment operation when the gas consumption per pulse Gwt is increased and set.
[0311] 9.3.4 Effects The consumable life extension mode operation can extend the number of pulses remaining until the consumable maintenance is required. By extending the number of pulses remaining until the consumable maintenance is required, for example, it becomes possible to align the maintenance timing of other consumables in the lithography system #k with the maintenance timing of the light source #k, thereby improving the downtime of the production line. In addition, the consumable life extension mode operation can also align the maintenance timing of the consumables of the light source #k with the maintenance timing of the consumables of the light source #j (j ≠ k).
[0312] 9.3.5 Other In this example, three examples are shown: a target halogen partial pressure reset example, a target spectral line width reset example, and a target gas consumption reset example, but the present invention is not limited to these examples, and these three examples may be appropriately combined. By doing so, it is also possible to narrow the range of specification relaxation of the recommended target parameter information.
[0313] 9.4 Reduced consumption mode operation 9.4.1 Reduced gas consumption mode operation It is also anticipated that, for some reason, there may be a demand to reduce gas consumption from the normal specifications. In order to reduce gas consumption, the operation control target parameters of the light source may be set so that the pulse energy is increased when the same gas pressure and charging voltage are applied.
[0314] Fig. 40 is a graph showing the relationship between the gas consumption per unit pulse and the pulse energy. As shown in Fig. 40, in general, in a light source, as the gas consumption per unit pulse increases, the pulse energy of the light output from the light source tends to increase.
[0315] The reason for this is believed to be that the amount of laser gas exchanged increases, making it possible to reduce the concentration of impurity gases that absorb laser light and are present in the chamber, thereby increasing the pulse energy.
[0316] Therefore, by increasing the gas consumption per unit pulse, it is possible to maintain the pulse energy of the light source high. Conversely, if the pulse energy can be maintained high by other parameters, it is possible to reduce the gas consumption.
[0317] 9.4.1.1 Example of resetting target halogen partial pressure 24. Fig. 41 is an example of a process flow applied in the case of low gas consumption mode operation. In the case of low gas consumption mode operation, the flowchart in Fig. 41 is applied to step S71 in Fig. 24.
[0318] In step S201, the light source parameter management server 320 sets the gas consumption amount Gwtp as a priority target parameter. Steps S202, S203, S204, and S207 may be similar to steps S182, S183, S184, and S187 in FIG.
[0319] In step S208 after step S207, the light source parameter management server 320 outputs the target gas consumption rate Gwtp, which is the priority target parameter information, to the light source #k.
[0320] After step S208, the light source parameter management server 320 returns to the flowchart of FIG.
[0321] As explained in Fig. 35, by adjusting the target halogen gas partial pressure Hgct so that the pulse energy becomes the maximum energy, it is possible to increase the pulse energy when the same gas pressure and the same charging voltage are applied. This margin of the pulse energy can be allocated to reducing the gas consumption.
[0322] In this case, the light source parameter management server 320 obtains the pulse energy stability as the recommended target parameter information based on the data during the adjustment operation, and outputs the estimated recommended target parameter information and maintenance information to an external device.
[0323] 9.4.1.2 Example of broadening the target spectral linewidth As in the example of Fig. 33, by widening the target spectral linewidth Δλt, it is possible to increase the pulse energy when the same gas pressure and the same charging voltage are applied. This margin of pulse energy can be allocated to reducing gas consumption. In this case, the following parameters are reset as the operation control target parameters of light source #k in the flowchart of Fig. 24.
[0324] [1] The gas consumption per pulse of light source #k is set to a reduced target gas consumption Gwtp.
[0325] [2] Set the spectral linewidth to a broadened target spectral linewidth Δλtp.
[0326] In this case, the recommended target parameter information is obtained based on the operating data during the adjustment operation, and the spectral linewidth Δλ and the stability range of the spectral linewidth are calculated.The recommended target parameter information and maintenance information are then output to an external device.
[0327] 9.4.1.3 Example of decreasing the number of pulses remaining until maintenance In addition, when the specification of the target parameter of the energy stability or the spectral linewidth cannot be relaxed as the recommended target parameter information, the gas consumption can be suppressed by shortening the number of pulses remaining until the maintenance of the consumables. In this case, however, the fact that the number of pulses remaining until the maintenance is shortened is output to an external device as the maintenance information.
[0328] 9.4.1.4 Effects According to the above-mentioned example of the low gas consumption mode operation, the gas consumption per unit pulse can be reduced. When the cost of excimer laser gas rises, the low gas consumption mode operation has a large cost reduction effect.
[0329] Furthermore, for example, when the remaining amount of excimer laser gas in a semiconductor factory becomes low, but the operation of the light source cannot be stopped, the gas consumption reduction mode operation is an effective measure.
[0330] 9.4.1.5 Other In the above example, three examples are shown: resetting the target halogen partial pressure, widening the target spectral line width, and shortening the remaining number of pulses until maintenance. However, the present invention is not limited to these examples, and these three examples may be appropriately combined. By doing so, it is also possible to narrow the range of relaxation of the recommended target parameters.
[0331] 9.4.2 Power saving mode operation Power consumption can be reduced by setting the range of the charging voltage of the power supply to a low range.
[0332] 9.4.2.1 Example of Resetting the Target Value of the Charging Voltage 42 shows an example of a process flow applied in the case of power saving mode operation. In the case of power saving mode operation, the flowchart in FIG. 42 is applied to step S71 in FIG.
[0333] In step S211, the light source parameter management server 320 selects an operation control target parameter capable of reducing power consumption (electricity consumption) as a priority target parameter. The light source parameter management server 320 selects the charging voltage of the charger 110 as one of the operation control target parameters capable of reducing power consumption.
[0334] In step S212, the light source parameter management server 320 resets the operation range HVLLt-HVULt of the charging voltage of the charger 110 as the operation control target parameter of the light source #k. Since power consumption depends on the charging voltage of the laser device, which is the light source, power consumption can be reduced by setting the lower limit HVLLt and upper limit HVULt of the target charging voltage low within an operable range.
[0335] In step S213, the light source parameter management server 320 outputs the operation range HVLLt to HVULt of the charging voltage as operation control parameter information to the light source #k.
[0336] After step S213, the light source parameter management server 320 returns to the flowchart of FIG.
[0337] As shown in the example of Fig. 42, power consumption can be reduced by setting the lower limit HVLLt and upper limit HVULt of the range of the charging voltage target value low within an operable range. In other words, the lower limit HVLLt and upper limit HVULt of the target charging voltage of the charger 110 as the operation control target parameters of the light source #k may be reset to values lower than those in the normal case.
[0338] However, setting the charging voltage low may have side effects such as a worsening of pulse energy stability, an increase in gas consumption, a decrease in the number of remaining pulses until maintenance, etc. In this case, the light source parameter management server 320 determines parameter information related to pulse energy stability and gas consumption based on the operating data during adjustment operation as recommended target parameter information, and outputs this recommended target parameter information and maintenance information to an external device.
[0339] 9.4.2.2 Example of resetting the target value of halogen gas partial pressure As shown in the example of Fig. 35, by setting the halogen gas partial pressure, which is an operation control target parameter, to a target value Hgct at which the maximum pulse energy is obtained, the pulse energy can be increased under the same gas pressure and charging voltage conditions. It is possible to allocate this margin of pulse energy to the operating range of the charging voltage. In this case, the light source parameter management server 320 determines the range of pulse energy stability as recommended target parameter information based on the operating data during adjustment operation, and outputs this recommended target parameter information to an external device.
[0340] 9.4.2.3 Example of broadening the target spectral linewidth As shown in the example of Fig. 33, by widening the target spectral linewidth Δλt, which is an operation control target parameter, it is possible to increase the pulse energy when the same gas pressure and the same charging voltage are applied. It is possible to allocate this margin of pulse energy to the operating range of the charging voltage. In this case, the light source parameter management server 320 determines the spectral linewidth and the stability range of the spectral linewidth as recommended target parameter information based on the operating data during adjustment operation, and outputs this recommended target parameter information to an external device.
[0341] 9.4.3 Effects By operating in power-saving mode, power consumption can be reduced. Also, even if the power situation in a semiconductor factory becomes tight, the light source can continue to operate while suppressing power consumption.
[0342] 9.4.4 Other In the above example, three examples are shown: a case where the charging voltage target value is reset, a case where the halogen gas partial pressure is reset, and a case where the spectral line width is widened. However, the present invention is not limited to these examples, and these three examples may be appropriately combined. By doing so, it is also possible to narrow the range of specification relaxation of the recommended target parameters.
[0343] Moreover, one of the items that accounts for a large proportion of the power consumption of the laser device is the power consumption of the motor 124 that drives the CFF 123. In this case, by reducing the number of rotations of the CFF 123, it is possible to suppress the power consumption.
[0344] In this case, however, the stability of the pulse energy may deteriorate, or the life of the chamber may be shortened. Even in this case, the recommended target parameter information may be output to an external device, which may then judge whether the operation is OK or NO.
[0345] 9.5 Variations FIG. 43 is a block diagram showing a modification of the fourth embodiment. As shown in FIG. 43, the semiconductor manufacturing system may be configured to include an input / display device 330 connected to the light source parameter management server 320. The input / display device 330 includes an input device that accepts information input from an operator and a display device that displays various information. The input device may be, for example, a keyboard, a mouse, a multi-touch panel, or a voice input device, or an appropriate combination of these. The input / display device 330 may be an information processing terminal device such as a personal computer or a tablet terminal that can access the light source parameter management server 320 via a communication line. There may be a plurality of input / display devices 330.
[0346] An operator in the factory may select a light source #k from this input / display device 330 and input priority target parameter information, thereby causing maintenance information and recommended target parameter information to be displayed on the input / display device 330. Then, the operator may check the maintenance information and the recommended target parameter information, make an OK / NOK decision on operation, and input the result of the decision from the input / display device 330.
[0347] Furthermore, the method of inputting priority target parameter information from the input / display device 330 is not limited to directly inputting information on parameters and their numerical values. For example, by inputting mode information such as typical performance-priority mode operation, consumable life extension mode operation, or consumption reduction mode operation from the input / display device 330, priority target parameter information defined for each mode may be automatically set to perform a similar operation.
[0348] As an example, a mode selection menu including multiple mode selection candidates is presented on the input / display device 330, and when the operator inputs an instruction to select, for example, the "spectral linewidth priority mode" from the mode selection menu, priority target parameter information including a target value that narrows the spectral linewidth defined in the spectral linewidth priority mode is imported into the light source parameter management server 320. Conversion from the mode information to the corresponding parameter information may be performed in the input / display device 330 or in the light source parameter management server 320.
[0349] 10.Examples of parameter information A specific example of parameter information related to a light source is shown in Fig. 44. For example, parameter information on a spectral linewidth is a collection of data including a spectral linewidth and its value, and a spectral linewidth stability and its value.
[0350] FIG. 45 shows a specific example of the priority target parameter information. For example, the priority target parameter information of the spectral linewidth includes a priority target spectral linewidth as a variable, a target value Δλtp of the prioritized spectral linewidth, and the stability of the priority target spectral linewidth as other variables, and a target value ΔΔλtp of the fluctuation range of the prioritized spectral linewidth Δλ. The spectral linewidth here is an example of a "first variable" in this disclosure, and the target value Δλtp is an example of a "first target value" in this disclosure. The fluctuation range of the spectral linewidth Δλ corresponds to the numerical range of the allowable spectral linewidth Δλ. The fluctuation range of the spectral linewidth Δλ is an example of a "second variable" in this disclosure, and the target value ΔΔλtp is an example of a "second target value" in this disclosure.
[0351] A specific example of recommended target parameter information is shown in Figure 46. Figure 46 differs from Figure 45 in that the phrase "priority target parameters" shown in Figure 45 has been changed to "recommended target parameters" and the priority target values shown in Figure 45 have been changed to recommended target values.
[0352] A specific example of the maintenance information is shown in Fig. 47. In this example, the chamber 100, the LNM line narrowing module, and the output coupling mirror (OC) are given as examples of consumables, but the consumables are not limited to this example, and may also include, for example, other optical modules (such as an optical pulse stretcher not shown) arranged on the optical path of the laser light.
[0353] A specific example of operation control target parameter information is shown in Fig. 48. In this example, the voltage (charging voltage) commanded to the charger, the halogen gas partial pressure, and the lens spacing of the wavefront adjuster are given as examples of operation control parameters, but the operation control parameters are not limited to these examples, and may also include, for example, control gains for feedback control of the spectral line width, wavelength, and pulse energy.
[0354] 11. Computer-readable media on which programs are recorded It is possible to record a program including instructions for causing a computer to function as the data analysis server 310 or the light source parameter management server 320 described in each of the above embodiments on an optical disk, a magnetic disk, or other computer-readable medium (a tangible, non-transient information storage medium) and provide the program through this information storage medium. By incorporating this program into a computer and having a processor execute the instructions of the program, the computer can be made to realize the functions of these servers.
[0355] 12.Other In each of the above-described embodiments, an excimer laser device is exemplified as a light source used in the exposure apparatus, but the present invention is not limited to this, and may be a solid-state laser device, an extreme ultraviolet (EUV) light generation device that generates EUV light with a wavelength of about 13 nm, etc. The EUV light generation device may be, for example, an LPP (Laser Produced Plasma) type device that uses plasma generated by irradiating a target material with laser light.
[0356] The above description is intended to be illustrative rather than restrictive. Thus, it will be apparent to those skilled in the art that modifications may be made to the disclosed embodiments without departing from the scope of the claims. It will also be apparent to those skilled in the art that the disclosed embodiments may be used in combination.
[0357] Terms used throughout the present specification and claims should be interpreted as "open ended" terms unless otherwise specified. For example, terms such as "include," "have," "comprise," and "include" should be interpreted as "not excluding the presence of elements other than those listed." In addition, the modifier "a" should be interpreted as "at least one" or "one or more." In addition, the term "at least one of A, B, and C" should be interpreted as "A," "B," "C," "A+B," "A+C," "B+C," or "A+B+C." Furthermore, it should be interpreted to include combinations of these with elements other than "A," "B," and "C."
Claims
1. A light source parameter information management method for managing parameter information of a light source used in an exposure apparatus, comprising: Obtaining priority target parameter information including an item of a variable that is a priority target parameter prioritized in the operation of the light source and a target value of the variable; estimating maintenance information including a value representative of a life until maintenance of a consumable in the light source based on the priority target parameter information; outputting the maintenance information; A light source parameter information management method comprising:
2. 2. A light source parameter information management method according to claim 1, accepting input of the priority target parameter information from an external device; outputting the maintenance information to the external device; A method for managing light source parameter information.
3. The light source parameter information management method according to claim 2, further comprising: obtaining an OK signal or a NOK signal representing permission or disapproval of operation of the light source from the external device; A method for managing light source parameter information.
4. The light source parameter information management method according to claim 3, further comprising: When receiving the OK signal permitting operation of the light source from the external device, setting the priority target parameter information in the light source and controlling the light source. A method for managing light source parameter information.
5. The light source parameter information management method according to claim 4, further comprising: estimating the maintenance information of the light source when the priority target parameter information is set from data during operation of the light source; A method for managing light source parameter information.
6. The light source parameter information management method according to claim 5, further comprising: outputting the maintenance information estimated from the data during operation to the external device; A method for managing light source parameter information.
7. The light source parameter information management method according to claim 3, further comprising: stopping operation of the light source when a NOK signal not permitting operation of the light source is received from the external device; A method for managing light source parameter information.
8. 2. A light source parameter information management method according to claim 1, the priority target parameter information includes a first target value of a first variable which is the priority target parameter, and a second target value of a second variable which indicates a numerical range of the first variable; A method for managing light source parameter information.
9. 2. The parameter information management method according to claim 1, The priority target parameter information is At least one of target spectrum characteristic parameter information, target output characteristic parameter information, and target consumption amount information is included. A method for managing light source parameter information.
10. 2. A light source parameter information management method according to claim 1, The maintenance information includes at least one of a remaining number of pulses and a remaining time until maintenance of the consumable is required as a value representing the life of the consumable. A method for managing light source parameter information.
11. 2. A light source parameter information management method according to claim 1, The estimation of the maintenance information includes: inputting operation data obtained by setting the priority target parameter information to the light source and adjusting and operating the light source into a trained machine learning model, and outputting a deterioration level of the consumable from the machine learning model; determining a value representing a lifespan of the consumable based on the degree of deterioration; A method for managing light source parameter information.
12. 2. The light source parameter information management method according to claim 1, further comprising: estimating recommended target parameter information including parameter information different from the acquired priority target parameter information; and outputting the recommended target parameter information. A method for managing light source parameter information.
13. A light source parameter information management method according to claim 12, The recommended target parameter information includes at least one of target spectrum characteristic parameter information, target output characteristic parameter information, and target consumption parameter information; A method for managing light source parameter information.
14. 2. A light source parameter information management method according to claim 1, The priority target parameter information includes mode information that specifies at least one of a light performance priority mode that prioritizes the light performance of the light source, a consumable life extension mode that prioritizes the extension of the life of the consumables of the light source, and a consumption reduction mode that reduces the consumption of elements consumed in the operation of the light source. A method for managing light source parameter information.
15. A light source parameter information management method according to claim 14, The light performance priority mode is a mode in which the light source is operated by giving priority to either spectral line width parameter information or output characteristic parameter information. A method for managing light source parameter information.
16. A light source parameter information management method according to claim 14, The consumable life extension mode is a mode in which the light source is operated with a priority on extending the number of remaining pulses until the consumables of the light source are required for maintenance. A method for managing light source parameter information.
17. A light source parameter information management method according to claim 14, The consumption reduction mode is a mode in which the light source is operated by prioritizing either reduction in the consumption of laser gas or reduction in power consumption. A method for managing light source parameter information.
18. 2. A light source parameter information management method according to claim 1, the priority target parameters are selected based on wafer inspection data, data obtained from the exposure tool, data obtained from the light source, and tracking data; A method for managing light source parameter information.
19. A light source parameter information management device for managing parameter information of a light source used in an exposure apparatus, comprising: A processor; A memory in which a program executed by the processor is stored; The processor executes the instructions of the program, causing the processor to: Obtaining priority target parameter information including an item of a variable that is a priority target parameter that is prioritized when operating the light source and a target value of the variable; estimating maintenance information including a value representative of a life until maintenance of a consumable in the light source based on the priority target parameter information; outputting the maintenance information; Light source parameter information management device.
20. A non-transitory computer-readable medium having recorded thereon a program for causing a computer to realize a function of managing parameter information of a light source used in an exposure apparatus, The computer includes: A function of acquiring priority target parameter information including an item of a variable that is a priority target parameter to be prioritized when operating the light source and a target value of the variable; A function of estimating maintenance information including a value representing a life until maintenance of a consumable in the light source based on the priority target parameter information; A function of outputting the maintenance information; A computer-readable medium having the program for realizing the above recorded thereon.
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