Chamber components for gas delivery regulation

Abstract

An exemplary semiconductor processing chamber may include an inlet manifold defining a central opening. The inlet manifold may also define a first channel and a second channel, each of which extends through the inlet manifold radially outward of the central opening. The chamber may also include a gas box characterized by a first surface facing the inlet manifold and a second surface opposite the first surface. The gas box may define a central opening aligned with the central opening of the inlet manifold. The gas box may define a first annular channel at the first surface extending around the central opening of the gas box, the first annular channel being fluidically coupled to the first channel of the inlet manifold. The gas box may define a second annular channel extending radially outward from the first annular channel, the second annular channel being fluidically coupled to the second channel of the inlet manifold. The second annular channel may be fluidically isolated from the first annular channel.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of priority to U.S. Patent Application No. 62 / 932,811, filed November 8, 2019, the contents of which are incorporated herein by reference in their entirety for all purposes. [Technical field]

[0002] The present technology relates to components and apparatus for semiconductor manufacturing. More particularly, the present technology relates to distribution components for processing chambers and other semiconductor processing equipment. [Background technology]

[0003] Integrated circuits are made possible by processes that form layers of materials in complex patterns on a substrate surface. Creating patterned materials on a substrate requires controlled methods for forming and removing materials. Chamber parts often deliver process gases to the substrate to deposit a film or remove material. To promote symmetry and uniformity, many chamber parts may include regular patterns of features, such as openings, to deliver material in a manner that can improve uniformity. However, this may limit the ability to tailor recipes for on-wafer adjustments.

[0004] Thus, there is a need for improved systems and methods that can be used to fabricate high quality devices and structures. The present technique addresses these and other needs. Summary of the Invention

[0005] An exemplary semiconductor processing chamber may include an inlet manifold defining a central opening. The inlet manifold may also define a first channel and a second channel, each of the first channel and the second channel extending through the inlet manifold radially outward of the central opening. The processing chamber may also include a gas box characterized by a first surface facing the inlet manifold and a second surface opposite the first surface. The gas box may define a central opening axially aligned with the central opening of the inlet manifold. The gas box may define a first annular channel at the first surface extending around the central opening of the gas box, the first annular channel being fluidly coupled with the first channel defined by the inlet manifold. The gas box may define a second annular channel extending radially outward of the first annular channel, the second annular channel being fluidly coupled with the second channel defined by the inlet manifold. The second annular channel may be fluidly isolated from the first annular channel.

[0006] In some embodiments, the second annular channel may be defined in a first surface of the gas box and may extend concentrically around the first annular channel. The gas box may define fluid access from the second annular channel to a plurality of transmission channels defined in the gas box and extending radially outward from the second annular channel. Each transmission channel of the plurality of transmission channels may define one or more outlet openings disposed radially outward from the second annular channel. The second annular channel may be defined in a second surface of the gas box. A second channel of the inlet manifold may be fluidly coupled to an inlet opening passing through the gas box from the first surface to the second surface.

[0007] The second annular channel may define a number of exit openings extending toward a processing region of the semiconductor processing chamber. An inlet opening through the gas box may be fluidly coupled to one or more conductance paths defined in the second surface, the one or more conductance paths extending from the inlet opening through the gas box to the second annular channel. The one or more conductance paths may be or include a return path extending radially outward to the second annular channel. The gas box may define a cooling channel at a first surface of the gas box radially outward of the first annular channel. The gas box may define a number of transfer openings through the first annular channel of the gas box. The transfer openings may provide fluid access between the first annular channel and a central opening of the gas box.

[0008] Some embodiments of the present technology may include a semiconductor processing chamber gas box. The gas box may include a first surface and a second surface opposite the first surface. The semiconductor processing chamber gas box may define a central opening through the semiconductor processing chamber gas box along a central axis through the semiconductor processing chamber gas box. The semiconductor processing chamber gas box may define a first annular channel at the first surface extending around the central opening of the semiconductor processing chamber gas box. The semiconductor processing chamber gas box may define a second annular channel extending radially outward from the first annular channel, the second annular channel being fluidly accessible from the first surface of the semiconductor processing chamber gas box. The second annular channel may be fluidly isolated from the first annular channel.

[0009] In some embodiments, a second annular channel may be defined in a first surface of the gas box and may extend concentrically around the first annular channel. The gas box may define fluid access from the second annular channel to a plurality of transmission channels defined in the gas box and extending radially outward from the second annular channel. Each transmission channel of the plurality of transmission channels may define one or more outlet openings disposed radially outward from the second annular channel. The second annular channel may be defined in a second surface of the gas box. An inlet opening may penetrate the gas box from the first surface to the second surface. The second annular channel may define a plurality of outlet openings. An inlet opening through the gas box may be fluidly coupled to one or more conductance paths defined in the second surface that extend from the inlet opening through the gas box to the second annular channel. The one or more conductance paths may be or may include a return path extending radially outward to the second annular channel. The gas box may define a cooling channel in a first surface of the gas box radially outward from the first annular channel. The gas box may define a plurality of transfer openings through the first annular channel of the gas box. The plurality of transfer openings may provide fluid access between the first annular channel and the central opening of the gas box.

[0010] Some embodiments of the present technology may include a semiconductor processing system. The system may include a semiconductor processing chamber. The system may include an inlet manifold coupled to the semiconductor processing chamber, the inlet manifold defining a central opening providing fluid access into the semiconductor processing chamber. The inlet manifold may further define a first channel and a second channel, each of the first channel and the second channel extending through the inlet manifold at a location radially outward of the central opening. The system may include a blocker plate providing fluid access to a processing region of the semiconductor processing chamber. The system may include a gas box characterized by a first surface facing the inlet manifold and a second surface opposite the first surface. The gas box may define the central opening axially aligned with the central opening of the inlet manifold. The gas box may define a first annular channel in the first surface extending around the central opening of the gas box, the first annular channel fluidly coupled to the first channel defined by the inlet manifold. The gas box may define a second annular channel formed radially outward of the first annular channel, the second annular channel fluidly coupled to the second channel defined by the inlet manifold. The gas box may also define a cooling channel formed radially outward of the first annular channel, the cooling channel defined in a first surface of the gas box. In some embodiments, the gas box may define a first fluid port providing fluid access to the cooling channel. The gas box may define a second fluid port providing fluid access from the cooling channel.

[0011] Such techniques may provide numerous advantages over conventional systems and techniques. For example, embodiments of the present techniques may allow for controlled dilution and distribution of precursors in central or outer regions of a substrate. Additionally, the chambers and components may allow multiple precursors to be delivered into the processing region or through the lid stack in some configurations. The above and other embodiments, along with many of their advantages and features, are described in more detail in the following specification and in conjunction with the accompanying drawings.

[0012] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief description of the drawings]

[0013] [Figure 1] 1 shows a top view of an exemplary processing system according to some embodiments of the present technique. [Diagram 2] 1 shows a schematic cross-sectional view of an exemplary plasma system in accordance with some embodiments of the present technique; [Diagram 3] 1 shows a schematic partial cross-sectional view of an exemplary processing chamber in accordance with some embodiments of the present technique; [Figure 4] 1 shows a schematic isometric view of a portion of an exemplary substrate processing chamber in accordance with some embodiments of the present technique. [Diagram 5] FIG. 13 shows a schematic bottom view of an exemplary inlet manifold in accordance with some embodiments of the present technology. [Figure 6] FIG. 1 shows a schematic bottom view of an exemplary gas box in accordance with some embodiments of the present technique. [Figure 7] FIG. 1 shows a schematic partial bottom view of an exemplary gas box in accordance with some embodiments of the present technique. [Figure 8] 1 shows a schematic partial cross-sectional view of an exemplary gas box in accordance with some embodiments of the present technique; [Figure 9A-C] 1 illustrates a schematic isometric view of an exemplary gas box plate in accordance with some embodiments of the present technology; DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] Some of the figures are included as schematics. It is understood that the figures are for illustrative purposes and are not to be considered to scale unless expressly stated to be to scale. Furthermore, as schematics, the figures are provided to aid in understanding and may not include all aspects or information as compared to realistic representations and may include material that is emphasized for illustrative purposes.

[0015] In the accompanying drawings, similar components and / or features may have the same reference numbers. Furthermore, various components of the same type may be distinguished by following the reference numbers with a letter that distinguishes between the similar components. If only a first reference number is used in this specification, the description is applicable to any of the similar components having the same first reference number, regardless of the letter.

[0016] A plasma enhanced deposition process can energize one or more constituent precursors to facilitate film formation on a substrate. Any number of material films can be created to grow semiconductor structures, including conductive and dielectric films, along with films to facilitate material transfer and removal. For example, hard mask films can be formed to facilitate substrate patterning while protecting underlying materials that would otherwise be maintained. In many processing chambers, numerous precursors can be mixed in a gas panel and delivered to a processing region of the chamber where a substrate may be placed. The precursors can be distributed through one or more components in the chamber, which can result in uniformity of delivery in the radial or lateral directions, leading to improved formation or removal at the substrate surface.

[0017] As device feature sizes become smaller, tolerances across the substrate surface can become smaller, and differences in material properties across the film can affect device realization and uniformity. Many chambers contain characteristic process signatures that can cause non-uniformity across the substrate. Temperature differences, uniformity of flow patterns, and other aspects of processing can affect the film on the substrate, causing differences in film properties and differences across the substrate in material formed or removed. Tuning the process at different regions of the substrate, such as distortion issues in planarity and other film property challenges, can be difficult to remedy with uniform delivery chamber parts, and many prior art techniques have limited available tuning or may require specialized parts to be manufactured.

[0018] The present technology overcomes the above challenges by utilizing one or more chamber components that can facilitate delivery adjustments that may increase or decrease precursor delivery, such as by dilution, or provide a means for material adjustments to the film based on the inclusion or adjustment of additional precursors, which may result in corresponding improvements in film formation and removal, as well as improved film properties.

[0019] The remaining disclosure routinely identifies a particular deposition process that utilizes the disclosed technology, but it will be readily apparent that the systems and methods are equally applicable to other deposition and cleaning chambers, and to processes that may occur in the described chambers. Correspondingly, the present technology should not be considered limited to use with the particular deposition process or deposition chambers described above. This disclosure will consider one possible system and chamber that may include lid stack components according to embodiments of the present technology, and will then discuss additional modifications and adjustments to the system according to embodiments of the present technology.

[0020] FIG. 1 illustrates a top view of an embodiment of a deposition, etch, bake, and cure chamber processing system 100 according to an embodiment. In the figure, a pair of front-opening unified pods 102 provide substrates of various sizes that are received by a robot arm 104 and placed in a low pressure holding area 106 and then placed in one of the substrate processing chambers 108a-108f located in tandem sections 109a-109c. A second robot arm 110 can be used to transfer substrate wafers from the holding area 106 to the substrate processing chambers 108a-108f and vice versa. Each substrate processing chamber 108a-108f can be equipped to perform several substrate processing operations including plasma enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, orientation, and formation of stacks of semiconductor materials as described herein in addition to other substrate processes including annealing, ashing, etc.

[0021] The substrate processing chambers 108a-108f may include one or more system components for depositing, annealing, curing, and / or etching a dielectric or metal film on a substrate. In one configuration, two pairs of processing chambers (e.g., 108c-108d and 108e-108f) may be used to deposit a dielectric material on a substrate, and a third pair of processing chambers (e.g., 108a-108b) may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers (e.g., 108a-108f) may be configured to deposit a stack of staggered dielectric films on a substrate. Any one or more of the processes described may be performed in chambers separate from the fabrication system shown in various embodiments. It will be understood that additional configurations of deposition, etching, annealing, and curing chambers for dielectric films are contemplated by the system 100.

[0022] 2 illustrates a schematic cross-sectional view of an exemplary plasma system 200 in accordance with some embodiments of the present technique. The plasma system 200 may include a pair of processing chambers 108 that may be mounted in one or more tandem sections 109 as described above, and may further include a substrate support assembly in accordance with embodiments of the present technique. The plasma system 200 may generally include a chamber body 202 having a sidewall 212, a bottom wall 216, and an inner wall 201 that define a pair of processing regions 220A and 220B. Each of the processing regions 220A-220B may be similarly configured and may include identical components.

[0023] For example, processing region 220B may include a pedestal 228 disposed therein via a passageway 222 formed in bottom wall 216 of plasma system 200, although components of processing region 220B may also be included in processing region 220A. Pedestal 228 may provide a heater configured to support a substrate 229 on an exposed surface of the pedestal, such as a body portion. Pedestal 228 may include a heating element 232, e.g., a resistive heating element, that may heat at a desired process temperature and control the substrate temperature. Pedestal 228 may also be heated by a remote heating element, such as a lamp assembly, or any other heating element.

[0024] The body of the pedestal 228 may be coupled to the stem 226 by a flange 233. The stem 226 may electrically connect the pedestal 228 to an electrical outlet or power box 203. The power box 203 may include a drive system to control the elevation and movement of the pedestal 228 within the processing region 220B. The stem 226 may also include a power interface for providing power to the pedestal 228. The power box 203 may also include an interface for power and temperature indicators, such as a thermocouple interface. The stem 226 may also include a base assembly 238 adapted to removably couple to the power box 203. A peripheral ring 235 is shown above the power box 203. In some embodiments, the peripheral ring 235 may be a shoulder adapted as a mechanical stop or land and configured to provide a mechanical interface between the base assembly 238 and the top surface of the power box 203.

[0025] A rod 230 may be included through a passageway 224 formed in the bottom wall 216 of the processing region 220B and may be utilized to position substrate lift pins 261 disposed through the body of the pedestal 228. The substrate lift pins 261 may selectively position the substrate 229 spaced from the pedestal to facilitate exchange of the substrate 229 by a robot utilized to transfer substrates into and out of the processing region 220B via the substrate transfer port 260.

[0026] A chamber lid 204 may be coupled to the top of the chamber body 202. The lid 204 may house one or more precursor delivery systems 208 coupled thereto. The precursor delivery system 208 may include a precursor inlet passage 240 that may deliver reactants and cleaning precursors into the processing region 220B through a dual channel showerhead 218. The dual channel showerhead 218 may include an annular base plate 248 having a blocker plate 244 disposed between a faceplate 246. A high wave number ("RF") source 265 may be coupled to the dual channel showerhead 218 to power the dual channel showerhead 218 and facilitate generating a plasma region between the faceplate 246 and the pedestal 228 of the dual channel showerhead 218. In some embodiments, an RF source may be coupled to other portions of the chamber body 202, such as the pedestal 228, to facilitate plasma generation. An insulating separator 258 may be disposed between the lid 204 and the dual channel showerhead 218 to prevent RF power from being conducted to the lid 204. A shadow ring 206 that engages the pedestal 228 may be disposed around the periphery of the pedestal 228.

[0027] Optional cooling channels 247 may be formed in the annular base plate 248 of the gas distribution system 208 to cool the annular base plate 248 during operation. A heat transfer fluid, such as water, ethylene glycol, or gas, may be circulated through the cooling channels 247 so that the base plate 248 may be maintained at a predetermined temperature. A liner assembly 227 may be disposed in the processing region 220B in close proximity to the sidewalls 201, 212 of the chamber body 202 to prevent exposure of the sidewalls 201, 212 to the processing environment in the processing region 220B. The liner assembly 227 may include a circumferential exhaust cavity 225 that may be connected to an exhaust system 264 configured to exhaust gases and by-products from the processing region 220B and control the pressure in the processing region 220B. A number of exhaust ports 231 may be formed in the liner assembly 227. The exhaust ports 231 may be configured to allow gas to flow from the processing region 220B to the circumferential exhaust cavity 225 in a manner that facilitates processing within the system 200.

[0028] FIG. 3 illustrates a schematic partial cross-sectional view of an exemplary semiconductor processing chamber 300, according to some embodiments of the present technique. FIG. 3 may include one or more components previously described with respect to FIG. 2, and may provide additional details regarding the chamber. It is understood that the chamber 300 may include any of the features or aspects of the system 200 described above in some embodiments. The chamber 300 may be used to perform semiconductor processing operations, including deposition of hard mask materials as described above, as well as other deposition, removal, and cleaning operations. It is understood that the chamber 300 may represent a partial view of a processing region of a semiconductor processing system and may not include all of the components described above, such as the remote plasma unit shown above, which may be incorporated in some embodiments of the chamber 300.

[0029] As noted above, FIG. 3 may depict a portion of a processing chamber 300. The chamber 300 may include several lid stack components that may facilitate the transfer or distribution of materials through the processing chamber and into a processing region 305 (e.g., where a substrate may be disposed on a pedestal 310). A chamber lid plate 315 may extend across one or more plates of the lid stack and may provide structural support for components such as a remote plasma unit as previously shown for system 200. The lid plate 315 may provide access, such as through an opening, to an interior volume of the processing chamber 300. An inlet manifold 320 may be disposed on the lid plate and may provide coupling with a remote plasma unit that may provide precursors or plasma effluents for chamber cleaning or other processing operations. The inlet manifold 320 may define a central opening 322 that may extend about a central axis of the chamber or the inlet manifold. The inlet manifold can further define one or more additional channels, which may include angled, arcuate, or other opening features for additional fluid communication, as described further below. The additional channels can extend at least partially through the inlet manifold toward the processing region of the chamber.

[0030] The processing chamber 300 may also include an insulator 325 that may electrically or thermally isolate the inlet manifold from other lid stack components. The insulator 325 may also define a central opening 327 that may be axially aligned with the central opening 322 of the inlet manifold 320. The insulator 325 may also define one or more additional openings that may be aligned with one or more additional channels of the inlet manifold and may extend through the insulator toward the processing region. The processing chamber 300 may also include a gas box 330, on which the insulator may be disposed.

[0031] The gas box 330 may be characterized by a first surface 331 and a second surface 332 that may be opposite the first surface. The gas box may define a central opening 333 that may extend completely through the gas box from the first surface to the second surface. The central opening 333 may be axially aligned with a central opening of the inlet manifold 320 and may be axially aligned with a central opening of the insulator 325. The opening may define a channel that may be at least partially used to transmit plasma effluent from a remote plasma unit disposed on the inlet manifold. The gas box 330 may also define one or more channels that may be fluidly accessible from one or more additional channels of the inlet manifold, allowing multiple precursors to be transmitted through the lid stack with various flow profiles.

[0032] For example, the gas box 330 can define a first annular channel 335 extending from the first surface 331 at least partially through the gas box. As described further below, the first annular channel 335 can be fluidly accessed from the first channel via an inlet manifold. In some embodiments, the first annular channel 335 can be concentric with a central opening 333 of the gas box. The gas box 330 can also define one or more transfer openings 336. The transfer openings 336 can be defined via the first annular channel 335. A lateral or radial cutout, as shown, can extend radially outward within the central opening of the gas box and provide fluid access from the transfer openings 336. As a result, the transfer openings 336 can provide fluid access between the first annular channel 335 and the central opening 333 of the gas box. Thus, one or more precursors transferred through the first channel via the inlet manifold can be transferred to the central opening of the gas box without going through a remote plasma unit.

[0033] The gas box 330 may also define a second annular channel in some embodiments, one of which is shown in FIG. 3. The illustrated second annular channel 340 may be formed radially outward of the first annular channel and may be coupled with a second channel defined through an inlet manifold. In some embodiments, the second annular channel may be fluidically isolated from the first annular channel, which may maintain a controlled fluid distribution through the lid stack. The second annular channel 340 may be defined in the gas box in one or more ways, and various options are detailed below for illustrative purposes, but are not intended to limit the present technology or the claims. Some deposition or etch materials may cause non-uniformities at the substrate surface, which may result in changes in profile or film properties across the substrate. By allowing additional precursor delivery at radially outer locations, additional precursors may be delivered, which may enhance growth, such as by delivering additional process precursors, or diluents that may reduce the deposition or etch process at locations across the substrate.

[0034] As shown in FIG. 3, a second annular channel 340 may also be defined in a first surface of the gas box that includes the first annular channel 335. In this configuration, the second annular channel may extend around the first annular channel. The second annular channel may also be concentric with the first annular channel. The gas box may define several transfer openings 341 extending from the second annular channel, as well as transfer openings 336 extending from the first annular channel 335. The transfer openings 341 may provide fluid access to several configurations from the second annular channel. In one example, as shown, each transfer opening 341 may have fluid access to a transfer channel 342 that may be defined in the gas box and may extend radially outward from the second annular channel, for example, in a spoke configuration. Along each delivery channel 342, there may be one or more exit openings 343, which may provide fluid access from the gas box for precursors introduced via a second channel through the inlet manifold. The exit openings 343 may be located radially outward of the second annular channel in some embodiments. The gas box 330 may also define cooling channels 344, which may also be defined in a first surface of the gas box and may extend around one or more of the central opening 333, the first annular channel 335, or the second annular channel 340.

[0035] The semiconductor processing chamber 300 may also include additional components such as a blocker plate 345 and a face plate 350 in some embodiments. The blocker plate 345 may define several openings that may enhance radial diffusion and improve uniformity of delivery. In some illustrated embodiments, the blocker plate 345 may include one or more plates, and in some embodiments, may include a first plate 346 and a second plate 347. For example, the first plate 346 may be at least partially mounted on the second plate 347. The second plate 347 may include or define several openings through the blocker plate. The first plate 346 may be included to further distribute the precursor exiting the outlet opening 343 as described above. The first plate 346 may provide an additional radial extension for the precursor, which may define one or more outlet openings to provide access to the second plate 347. A blocker plate 345, which may be or may include a second blocker plate 347, may be a first location in the lid stack where precursors delivered to the first annular channel of the gas box may intermingle with precursors delivered to the second annular channel of the gas box. Allowing some intermixing before contacting the substrate surface may provide some overlap, which may provide a smoother transition at the substrate and limit the formation of interfaces on the film or substrate surface. A faceplate 350 may then deliver the precursors to a processing region that may be at least partially defined from above by the faceplate.

[0036] 4 shows a schematic partial isometric view of a portion of an exemplary substrate processing chamber according to some embodiments of the present technology, which may show additional aspects of the chamber 300 described above. It should be understood that any aspect of any of the chambers or components described above may be included in any aspect of FIG 4. The figure may show additional aspects of the communication to the inlet manifold described above, and may further show access locations for fluid communication.

[0037] As shown, the inlet manifold 320 can define a central opening 322 and can define one or more additional openings or channels for fluid communication. The manifold can be disposed on a lid plate 315, which can support one or more additional components of a semiconductor processing system. The inlet manifold 320 can also define one or more additional access locations that can provide assistance for communicating precursors to the first and second annular channels of the gas box. For example, from the gas panel, a fluid manifold 405 can be used to route separate fluids to additional channels within the manifold. For example, a first line can extend to a first access location 410, which can provide an inlet to a first channel defined in the inlet manifold. A second line can extend to a second access location 415, which can provide an inlet to a second channel defined in the inlet manifold. The channels can define a transition from horizontal to vertical within the manifold. As will be appreciated, any number of precursors may be delivered through any access in the inlet manifold, for example, one or more deposition precursors, one or more inert gases, one or more etchant precursors, or any other material may flow through the inlets.

[0038] 5 shows a schematic bottom view of an exemplary inlet manifold according to some embodiments of the present technology, and may show a bottom view of the manifold 320 described above. For example, the inlet manifold 320 may define a central opening 322 and may provide a first channel 510, which may be an outlet to the gas box as described above, for accessing a first annular channel within the gas box. Additionally, a second channel 515 may be an outlet to the gas box for accessing a second annular channel within the gas box. These outlets may pass through additional components, such as the insulators described above, before accessing the gas box.

[0039] 6, a schematic bottom view of an exemplary gas box 330 according to some embodiments of the present technology is shown. The figure may show further details of the gas box to illustrate fluid communication from the channels. As mentioned above, the gas box 330 may feature a first surface 331, for example, facing the inlet manifold. The gas box 330 may also feature a second surface 332 opposite the first surface, for example, facing the processing region. The gas box 330 may define a central opening 333 and may define a first annular channel 335, which may be fluidly coupled to the central opening 333 by a number of communication openings 336. In addition, the gas box 330 may define a second annular channel 340, which may be fluidly coupled to several communication channels 342 extending radially through the gas box 330 by communication openings 341. In some embodiments, any number of transfer channels 342 may be included and one or more exit openings 343 may provide access from the gas box.

[0040] FIG. 6 also shows a cover plate 605, which may cover the cooling channels 344. The cooling channels 344 may also be defined in the first surface 331 of the gas box 330 and may allow for the transfer of temperature controlled fluid to the gas box. The cover plate 605 may be of a similar or different material to the gas box 330 and may be welded, bonded, or otherwise coupled to the gas box 330 to seal the cooling channels 344. The cooling channels 344 may be accessed from one or more ports defined in the gas box. For example, a first port 608 may be defined to provide access to one end of the cooling channels 344 and a second port 610 may be defined to provide access to the opposite end of the cooling channels 344. In this case, the cooling fluid may circulate through the channels such that it is transferred through one port and collected from the other port.

[0041] FIG. 7 shows a schematic partial bottom view of an exemplary gas box 700 according to some embodiments of the present technology. The gas box 700 may include any of the features of the gas box configurations or characteristics described above. Additionally, the gas box 700 may be included in any of the chambers described above or may be part of any lid stack including any of the components described above. The gas box 700 may include a top surface defining a first annular channel as described above, which may transmit precursors to the central opening 703 as previously described. The second surface 702 may include or may have a second annular channel 715 defined in it. The second annular channel 715 may be defined in the second surface, and in some embodiments, the second annular channel 715 may be formed in the second surface 702, such as by a strip channel that may be welded, bonded, or otherwise coupled to the second surface of the gas box.

[0042] An inlet opening 705 may extend from the inlet manifold, for example in line with the second channel, and may penetrate the first surface of the gas box. The opening may penetrate the second surface of the gas box at a position radially outside the central opening, and may access a transfer channel at the outlet of the inlet opening 705. One or more channels 710 may be included by the strips for distributing one or more precursors to the second annular channel 715, and may fluidly couple the second annular channel 715 with the inlet opening 705. For example, the channels 710a, 710b, and 710c may be conductance paths, which may be differently dimensioned to provide equal conductance flow to the second annular channel 715. The second annular channel 715 may define multiple outlet openings extending from the gas box, for example, toward a processing region in the processing chamber.

[0043] It should be understood that the channels 710 can take several forms in addition to the illustrated configuration. For example, in some embodiments of the gas box 700 or gas boxes described elsewhere, a recurving flow profile can be formed. In one possible configuration encompassed by the present technology, the inlet opening 705 can extend to a central or intermediate location of an arcuate or lateral channel extending outwardly from the inlet opening 705. At each distal end of the first channel, additional or second arcuate or lateral channels can be formed that extend in two or more directions, where the first channel accesses the midpoint of each second channel. In this case, each second channel can distribute precursor to four separate locations on the second annular channel to improve distribution uniformity. Additional recurving patterns are encompassed as well, distributing precursor to progressively increasing locations around the second annular channel.

[0044] FIG. 8 shows a schematic partial cross-sectional view of an exemplary gas box 800 according to some embodiments of the present technology. The gas box 800 may include any of the features of the gas box configurations or characteristics described above. Additionally, the gas box 800 may be included in any of the chambers described above or may be part of any lid stack including any of the components described above. The gas box 800 may include a first surface 801 defining a first annular channel 805 as described above, which may transmit precursors to the central opening 803 via the transmission opening 807 as described above. Additionally, an inlet opening 810 may extend from the first surface 801 to the second surface 802 of the gas box 800. As described above, the inlet opening 810 may be fluidly coupled to an inlet manifold, e.g., coupled to a second channel of the inlet manifold, for receiving additional precursors.

[0045] The inlet opening 810 can also transmit the precursors to channels formed by the incorporation of an additional gas box plate 812, where the base plate of the gas box 800 can be welded, bonded, or otherwise coupled to one or more additional plates as shown to form the additional channels. In some embodiments, to ensure fluidic isolation of the inner channels, the additional gas box plate 812 can be diffusion bonded or otherwise require a more complex part design, as welding of the inner surface may not be feasible. The additional gas box plate 812 can be of the same material as any other gas box plate and can define one or more radial channels 814 that can extend from the inlet opening 810 to one or more outer channels, such as the second annular channel 816, which can include or alternatively be one or more of the retro-reflecting channels described above for distributing the precursors outward. For example, the radial channel 814 may additionally be a lateral or arcuate channel that distributes the precursor to two or more additional channels, which may distribute the precursor to multiple locations in the second annular channel 816 .

[0046] The gas box 800 can also define one or more exit openings 818, such as by an additional gas box plate 812, which can extend from the second annular channel 816 through the second surface 802 of the gas box. Several exit openings 818 can be included in or defined in the gas box in an embodiment. The gas box 800 can also define cooling channels 820 as described above, which can be sealed with a top cover 825. Each of the top cover 825, additional gas box plate 812, and base plate can be the same or different materials in an embodiment, and can be welded, bonded, or otherwise joined in several ways to create the gas box 800.

[0047] 9A-9C show schematic isometric views of plates of an exemplary gas box 900 according to some embodiments of the present technology, which may include one example of the return flow path described above, such as by a second annular channel. The figures show plates that may be combined in one or more ways to define a flow path for distributing precursors. The gas box 900 may include any of the features of the gas box configurations or properties described above. Furthermore, the gas box 900 may be included in any of the chambers described above, or may be part of any lid stack that includes any of the components described above. The gas box 900 may include multiple plates as shown, which may be fastened, bonded, welded, bolted, bonded, or joined together to define the gas box properties.

[0048] FIG. 9A shows a top plate 905, which may be coupled to a middle plate 910, as shown in FIG. 9B. For example, the top plate 905 may be fixedly coupled to the middle plate around a recessed channel 912 defined in an upper surface of the middle plate 910, which may define a cooling channel as described above. The middle plate may include one or more fluid communication ports 914, which may provide access to and from the cooling channel. The middle plate 910 may define a central opening 915, as described above, and a first annular channel 916, which may define an opening as described above to form a flow path to the central opening. The middle plate 910 may also define features that may function to provide or define a flow path for the second precursor. For example, a recessed channel 918 may be defined in an upper surface of the middle plate 910. An opening through the manifold provides access to the recessed channel 918 at or near the midpoint of the channel, allowing the delivered precursor to then travel in two directions along the channel.

[0049] The recessed channel 918 may extend to two or more distal ends that may access the upper surface of the middle plate through an opening 922. The opening 922 may provide fluid access to a bottom plate 925, which may be coupled to a bottom surface of the middle plate 910 opposite the upper surface of the plate, as shown in FIG. 9C. The bottom plate 925 may define a channel configuration for further distribution of the precursor. As shown, the bottom plate may define an inner channel 927 that may receive the precursor communicated through the middle plate 910 from the opening 922. One or more radial channels 928 may extend between the inner channel 927 and the outer channel 930. Although two such radial channels 928 are shown, it should be understood that any number of radial channels may be included in embodiments of the present technology, such as two, three, four, six, eight, or more radial channels.

[0050] The outer channel 930 can define a number of openings that extend through the bottom plate 925, allowing for precursor transfer from the gas box 900. Any number of through holes or openings can be defined along the outer channel 930, and the openings can be spaced around the radial channels 928 to provide more uniform transfer. For example, in some embodiments, openings may not be defined in the outer channel 930 directly aligned with any radial channel 928, while in other embodiments, openings can be included side-by-side. Including additional precursor transfer paths through the lid stack or components of the present technology can provide several process improvements. Wafer film thickness uniformity, material composition, and film properties can be further tuned to improve processes, limit in-plane distortion, and control film properties across the substrate.

[0051] In the preceding description, for purposes of explanation, numerous details have been set forth in order to facilitate an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details or with additional details.

[0052] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative structures, and equivalents may be used without departing from the spirit of the above embodiments. In addition, some well-known processes and elements have not been described in order to avoid unnecessarily obscuring the technology. Therefore, the above description should not be considered as limiting the scope of the technology.

[0053] Where a range of values ​​is given, unless the context clearly indicates otherwise, it is understood that each intervening value between the upper and lower limits of that range is specifically disclosed to the smallest unit of the lower limit. Any smaller range between any stated or unstated intervening value in a stated range and any other stated or intervening value in that stated range is included. The upper and lower limits of these smaller ranges may be individually included or excluded within the range, and each range where one or both limits are included or neither are included in the smaller range is also included within the scope of the technology, subject to any specifically excluded limit in the stated range. Where a stated range includes one or both limits, ranges excluding one or both of the included limits are also included.

[0054] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to "a heater" includes a plurality of such heaters, and reference to "the protrusion" includes reference to one or more protrusions and equivalents thereof known to those skilled in the art, and so forth.

[0055] Additionally, the words "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. 1. A semiconductor processing chamber comprising: an inlet manifold defining a central opening, the inlet manifold further defining a first channel and a second channel, each of the first channel and the second channel extending through the inlet manifold at a location radially outward of the central opening; a gas box characterized by a first surface facing the inlet manifold and a second surface opposite the first surface, the gas box defining a central opening axially aligned with the central opening of the inlet manifold; Equipped with the gas box defines a first annular channel in the first surface that extends around the central opening of the gas box, the first annular channel being fluidly coupled with the first channel defined by the inlet manifold; the gas box defines a second annular channel extending radially outward from the first annular channel and fluidly coupled to the second channel defined by the inlet manifold; a gas box of the semiconductor processing chamber fluidly coupled to the second annular channel and defining an inlet opening through the gas box from the first surface to the second surface, the inlet opening through the gas box fluidly coupled to one or more conductance paths defined in the second surface, the conductance paths extending radially outward from the inlet opening through the gas box to the second annular channel; The second annular channel is fluidly isolated from the first annular channel.

2. the second annular channel is defined in the first surface of the gas box and extends concentrically about the first annular channel; the gas box defines fluid access from the second annular channel to a plurality of communication channels defined within the gas box and extending radially outward from the second annular channel; The semiconductor processing chamber of claim 1 , wherein each of said plurality of transfer channels defines one or more exit openings disposed radially outward of said second annular channel.

3. 2. The semiconductor processing chamber of claim 1 , wherein the second annular channel is defined in the second surface of the gas box, and the second channel of the inlet manifold is fluidly coupled to the inlet opening that extends through the gas box from the first surface to the second surface.

4. The semiconductor processing chamber of claim 3 , wherein the second annular channel defines a plurality of exit openings extending toward a processing region of the semiconductor processing chamber.

5. 2. The semiconductor processing chamber of claim 1, wherein the gas box defines a cooling channel at the first surface of the gas box radially outward from the first annular channel.

6. 2. The semiconductor processing chamber of claim 1, wherein the gas box defines a plurality of transfer openings through the first annular channel of the gas box, the plurality of transfer openings providing fluid access between the first annular channel and the central opening of the gas box.

7. 1. A gas box for a semiconductor processing chamber, comprising: a first surface and a second surface opposite the first surface; the semiconductor processing chamber gas box defines a central opening therethrough along a central axis through the semiconductor processing chamber gas box; the semiconductor processing chamber gas box defines a first annular channel in a first surface that extends around the central opening of the semiconductor processing chamber gas box; a gas box of the semiconductor processing chamber defining a second annular channel extending radially outward from the first annular channel, the second annular channel being fluidly accessible from the first surface of the gas box of the semiconductor processing chamber; the second annular channel is fluidly isolated from the first annular channel; a gas box of the semiconductor processing chamber fluidly coupled to the second annular channel and defining an inlet opening through the gas box of the semiconductor processing chamber from the first surface to the second surface, the inlet opening through the gas box of the semiconductor processing chamber fluidly coupled to one or more conductance paths defined in the second surface, the conductance paths extending radially outward from the inlet opening through the gas box of the semiconductor processing chamber to the second annular channel; Semiconductor processing chamber gas box.

8. the second annular channel is defined in the first surface of the gas box and extends concentrically about the first annular channel; the gas box defines fluid access from the second annular channel to a plurality of communication channels defined within the gas box and extending radially outward from the second annular channel; 8. The gas box of claim 7, wherein each of said plurality of transfer channels defines one or more exit openings disposed radially outward of said second annular channel.

9. 8. The gas box of claim 7, wherein the second annular channel is defined in the second surface of the gas box and the inlet opening extends through the gas box from the first surface to the second surface.

10. The semiconductor processing chamber gas box of claim 9 , wherein the second annular channel defines a plurality of exit openings.

11. 8. The gas box of claim 7, wherein the gas box defines a plurality of transfer openings through the first annular channel of the gas box, the plurality of transfer openings providing fluid access between the first annular channel and the central opening of the gas box.

12. 1. A semiconductor processing system comprising: a semiconductor processing chamber; an inlet manifold comprising: a central opening coupled to the semiconductor processing chamber and providing fluid access into the semiconductor processing chamber; the inlet manifold further defines a first channel and a second channel; an inlet manifold, the first channel and the second channel each extending through the inlet manifold at a location radially outward of the central opening; a blocker plate providing fluid access to a processing region of the semiconductor processing chamber; a gas box characterized by a first surface facing the inlet manifold and a second surface opposite the first surface, the gas box defining a central opening axially aligned with the central opening of the inlet manifold; Equipped with the gas box defines a first annular channel in the first surface that extends around the central opening of the gas box, the first annular channel being fluidly coupled with the first channel defined by the inlet manifold; The gas box is a second annular channel formed radially outward of the first annular channel, the second annular channel being fluidly coupled to the second channel defined by the inlet manifold; and a cooling channel formed radially outward of the first annular channel, the cooling channel being defined in the first surface of the gas box; Define the gas box defines an inlet opening fluidly coupled to the second annular channel and extending through the gas box from the first surface to the second surface, the inlet opening through the gas box fluidly coupled to one or more conductance paths defined in the second surface, the conductance paths extending radially outward from the inlet opening through the gas box to the second annular channel; Semiconductor processing systems.

13. the gas box defines a first fluid port providing fluid access to the cooling channel; The semiconductor processing system of claim 12 , wherein said gas box defines a second fluid port providing fluid access from said cooling channel.

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