Electronic Cleaning Device

Abstract

Electron irradiation from a cleaner that uses electrons dissociates hydrocarbon-based gas, which is a precursor to contamination, causing deposition of carbon on members inside a specimen chamber and on a specimen surface, thereby contaminating components inside the specimen chamber. As such, provided is a device comprising: a specimen chamber 101 that is connected to a lens tube 112 which has a charged particle source 113; an electron source 102 that is disposed in the specimen chamber 101; and a shielding plate 105 that is provided to the front of the electron source 102, wherein the inside of the specimen chamber is cleaned by secondary electrons, which are emitted due to primary electrons emitted from the electron source colliding with the shielding plate.

Description

[Technical field]

[0001] The present invention relates to electronic cleaning devices. [Background technology]

[0002] In charged particle beam devices such as electron microscopes, impurities are deposited on the irradiated object (such as a sample) by the irradiation of the charged particle beam (contamination occurs, contamination adheres to the object). When contamination occurs, various problems occur, such as a deterioration in the signal-to-noise ratio of the electron microscope image, changes in the surface shape of the sample, and difficulties in analyzing sample information.

[0003] In order to reduce the effects of contamination, conventional techniques include a method of heating the device body with a heater (Patent Document 1), a method of irradiating ultraviolet light (Patent Document 2), and a method of using plasma (Patent Document 3). However, there is a problem that it is difficult to maintain an ultra-high vacuum inside the device due to outgassing caused by heat and the effects of gas introduction during plasma generation. In addition, it is difficult to apply these methods to samples that are sensitive to heat and ultraviolet light. Patent Document 4 describes a cleaning device that can maintain an ultra-high vacuum inside the device. In addition, since the cleaning method uses electrons, it is easily applied to samples handled in charged particle devices. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2010-103072 A [Patent Document 2] JP 2015-69734 A [Patent Document 3] JP 2016-54136 A [Patent Document 4] WO19 / 155540 Summary of the Invention [Problem to be solved by the invention]

[0005] In the above-mentioned Patent Document 4, it was found that the electron irradiation of the cleaner using electrons dissociates hydrocarbon gases, which are precursors of contamination, causing carbon to be deposited on the components in the sample chamber and on the surface of the sample, resulting in the contamination of parts inside the sample chamber. [Means for solving the problem]

[0006] In order to solve the above problems, the present invention provides a cleaning device that includes a sample chamber connected to a microscope barrel having a charged particle source, an electron source arranged in the sample chamber, and a shielding plate installed in front of the electron source, and that cleans, i.e., washes, the inside of the sample chamber using secondary electrons emitted when primary electrons emitted from the electron source collide with the shielding plate. Effect of the Invention

[0007] According to the present invention, a cleaning apparatus can be provided that can clean a sample chamber while suppressing dissociation of hydrocarbon gases and maintaining an ultra-high vacuum inside the apparatus without complicating the apparatus. [Brief description of the drawings]

[0008] [Figure 1] 1 is a diagram showing an example of the overall configuration of a charged particle beam device including a cleaning device according to a first embodiment. [Diagram 2] FIG. 2 is a diagram showing the process of emitting electrons into a sample chamber. [Diagram 3] 6 is a graph showing a change in secondary electron emission efficiency with respect to the electron beam incident angle. [Figure 4] FIG. 13 is a diagram showing a cleaning device in which the shielding plate has been modified to have a structure that increases secondary electron emission efficiency. [Diagram 5] FIG. 11 is a diagram showing an example of the overall configuration of a charged particle beam device including a cleaning device according to a second embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in order with reference to the drawings. EXAMPLES

[0010] 1 is a diagram showing a schematic diagram of a charged particle beam device of Example 1. This example is an example of a cleaning device that includes a sample chamber connected to a column having a charged particle source, an electron source disposed in the sample chamber, and a shielding plate disposed in front of the electron source, and cleans the inside of the sample chamber with secondary electrons emitted when primary electrons emitted from the electron source collide with the shielding plate.

[0011] In the figure, a charged particle beam device 111 includes a column 112 having a charged particle beam source 113, an electron cleaning device 100, a sample chamber 101, and a vacuum pump 114 for evacuating the sample chamber 101. The electron cleaning device 100 includes an electron source 102 including a filament provided inside the sample chamber 101, an electron source power supply 103 for generating a current for heating the electron source 102, a bias power supply 104 for applying a voltage to the electron source 102, a shielding plate 105 for colliding electrons emitted from the electron source 102, an ammeter 106 for measuring a current emitted from the electron source 102 (hereinafter, referred to as an emission current), a control unit 107 for controlling various components, a memory unit 108 for storing control conditions, current amount, and the like.

[0012] This cleaning device 100 cleans the inside of a sample chamber 101 by desorbing hydrocarbon gases, which are precursors of contamination that are physically adsorbed on the inner walls of the sample chamber 101 and on structures within the sample chamber, using electron irradiation and then evacuating the gas using a vacuum pump.

[0013] Electron irradiation can cause dissociation of the hydrocarbon gas in addition to desorption. Dissociation is a phenomenon in which the hydrocarbon gas is decomposed into carbon and hydrogen by electron irradiation. When the physically adsorbed hydrocarbon gas dissociates, only carbon adheres to the sample chamber 101, contaminating the sample chamber 101.

[0014] Dissociation occurs at an energy of several eV, while desorption occurs at an energy of 1 eV or less. By using this energy difference to cause only the desorption phenomenon, it is possible to suppress contamination of the sample chamber 101 and remove the hydrocarbon gas.

[0015] The energy of the electrons emitted from the electron source 102 is controlled by the bias power supply 104, and it is possible to reduce the electron energy by lowering the voltage of the bias power supply. However, when the voltage of the bias power supply is reduced, the number of electrons emitted into the sample chamber 101 decreases, and the cleaning efficiency decreases.

[0016] Therefore, in the configuration of this embodiment, the cleaning effect is maintained and the dissociation phenomenon is suppressed by utilizing secondary electrons generated when primary electrons emitted from the electron source 102 collide with the shielding plate 105 or the inner wall of the cleaning device 100.

[0017] 2 is a diagram showing the flow of electrons emitted from the cleaning device 100 into the sample chamber 101. Secondary electrons generated by collision with the shielding plate 105 or the inner wall of the cleaning device 100 are deflected by an electric field due to a voltage (accelerating voltage) applied to the electron source 102 by the bias power supply 104, and undergo repeated collisions inside the cleaning device 100, before being emitted into the sample chamber 101. Therefore, the amount of secondary electrons emitted into the sample chamber 101 depends on the accelerating voltage and the structure and arrangement of the shielding plate.

[0018] The secondary electrons that enter the sample chamber 101 collide with the inner walls and components of the sample chamber 101. If there is a physically adsorbed hydrocarbon gas at the collision site, the hydrocarbon gas is desorbed. The desorbed hydrocarbon gas is removed from the sample chamber 101 by two methods.

[0019] One is a method of evacuating the sample chamber 101 using a vacuum pump 114. The other is a method of causing high-energy primary electrons emitted from the electron source 102 to collide with the hydrocarbon gas floating in the sample chamber 101 and dissociate the gas.

[0020] The desorbed hydrocarbon gas may be physically adsorbed again within the sample chamber 101, but will desorb if irradiated with secondary electrons again, and desorption will be repeated until it is removed from the sample chamber 101.

[0021] It is believed that if the latter method is used to remove the hydrocarbon gas, a large amount of carbon will accumulate on the shielding plate 105, which is most irradiated with primary electrons. If carbon accumulates on the shielding plate 105, it is believed that the efficiency of generating secondary electrons will decrease, and the cleaning efficiency will decrease. For this reason, it is preferable to design the shielding plate 105 so that it can be easily replaced.

[0022] As described above, the shielding plate 105 of this embodiment has three roles. The first role is to act as a shield to prevent high-energy primary electrons emitted from the electron source 102 and accelerated by the bias power supply 104 from directly irradiating the inside of the sample chamber 101. The second role is to act as a source of secondary electrons for desorbing hydrocarbon-based gas physically adsorbed on the inner wall of the sample chamber 101. The third role is to trap carbon when a hydrocarbon-based gas floating in the sample chamber 101 collides with the primary electrons emitted from the electron source 102 and a dissociation phenomenon occurs.

[0023] In actual experimental results, it was confirmed that a cleaning effect could be obtained while suppressing contamination inside the sample chamber 101. It was also confirmed that carbon was trapped in the shielding plate.

[0024] A graph showing the change in secondary electron emission rate versus electron beam incidence angle is shown in Figure 3. It is known that increasing the electron beam incidence angle θ increases the secondary electron emission efficiency. FIG. 4 shows the configuration of the cleaning device 100 in which the shielding plate 105 is replaced with a shielding plate 109 which is bent.

[0025] In order to improve the efficiency of cleaning, it is possible to increase the number of secondary electrons irradiated into the sample chamber 101. As shown in Fig. 3, in order to increase the generation efficiency of secondary electrons, the angle θ of the irradiation direction of the surface irradiated with the primary electrons should be increased. If the bending angle of the shielding plate is θ', then the irradiation angles θ and θ' of the primary electrons are equal. Therefore, as shown in Fig. 4, by using the bent shielding plate 109, the incidence angle of the primary electrons becomes larger, which is thought to increase the efficiency of generating secondary electrons and improve the efficiency of cleaning.

[0026] Although the efficiency of generating secondary electrons increases as θ' ​​increases, the larger θ' requires the larger shielding plate 109 to block primary electrons. Therefore, the shape of the shielding plate 109 needs to be determined taking into consideration the structures of the cleaning device 100 and the sample chamber 101.

[0027] In order to increase the efficiency of generating secondary electrons, it is preferable to fabricate the shielding plates 105 and 109 from a material with high secondary electron generation efficiency, such as aluminum, gold, titanium, etc. Also, the surfaces of the shielding plates 105 and 109 may be coated with a material with high secondary electron generation efficiency.

[0028] Roughening the surfaces of the shielding plates 105 and 109 increases the emission efficiency of secondary electrons due to an edge effect, so it is preferable to roughen the surfaces of the shielding plates 105 and 109. Alternatively, the shielding plates 105 and 109 may be intentionally roughened. EXAMPLES

[0029] Example 2 is an example of a charged particle device including a bias power supply that applies a negative voltage to the shielding plate in addition to the configuration of Example 1. That is, this example is an example of a cleaning device further including a bias power supply connected to the shielding plate, and configured to apply a negative voltage to the shielding plate by the bias power supply, thereby increasing the amount of emitted secondary electrons.

[0030] In order to improve the cleaning performance of the cleaning device 100 of the embodiment 1, it is important to increase the amount of secondary electrons emitted. Therefore, in this embodiment, a negative voltage is applied to the shielding plate 105, which is a source of secondary electrons, to increase the amount of secondary electrons emitted and improve the cleaning performance.

[0031] FIG. 5 shows an example of the overall configuration of the cleaning device of the second embodiment. In addition to the configuration of the first embodiment, a bias power supply 110 is provided to apply a negative voltage to the shielding plate 105. For example, when the bias power supply 104 applies a voltage of −100 V to the electron source 102 with respect to the sample chamber 101 at the ground potential, the energy of the primary electrons is approximately 100 eV. At this time, if the bias power supply 110 applies −1 V to the shielding plate 105, the primary electrons reach the shielding plate 105 with an energy of approximately 99 eV while being decelerated. When the primary electrons arrive, more secondary electrons are emitted from the shielding plate 105 to which the negative voltage is applied, compared to when no voltage is applied. Thus, it is possible to increase the amount of secondary electrons emitted.

[0032] For example, if the bias power supply 104 applies a voltage of −100 V to the electron source 102 and the bias power supply 110 applies a voltage of −101 V to the shielding plate 105, the primary electrons cannot reach the shielding plate and secondary electrons cannot be generated. Therefore, the voltage applied by the bias power supply 110 must be smaller than the voltage applied by the bias power supply 104.

[0033] Secondary electrons emitted from the shielding plate 105 to which a negative voltage is applied by the bias power supply 104 are accelerated by the negative voltage applied by the bias power supply. For example, if the negative voltage applied by the bias power supply 110 is -99V, the energy of the secondary electrons emitted and reaching the inside of the sample chamber 101 is the energy at which the secondary electrons were generated plus 99 eV, causing frequent dissociation phenomena and contaminating the inside of the sample chamber.

[0034] From the above, the magnitude of the negative voltage applied to the shielding plate 105 by the bias power supply 110 needs to be set to an appropriate energy taking into account the magnitude of the negative voltage applied to the electron source 102 by the bias power supply 104 and the energy of the generated secondary electrons.

[0035] It should be noted that the present invention is not limited to the above-mentioned embodiment, but includes various modifications. For example, the above-mentioned embodiment has been described in detail to provide a better understanding of the present invention, and the present invention is not necessarily limited to the embodiment having all of the configurations described. [Explanation of symbols]

[0036] 100 cleaning device, 101 sample chamber, 102 electron source, 103 electron source power supply, 104 bias power supply, 105 shielding plate, 106 ammeter, 107 controller, 108 memory unit, 109 shielding plate, 110 bias power supply, 111 charged particle beam device, 112 column, 113 charged particle source, 114 vacuum pump

Claims

1. a sample chamber connected to a column having a charged particle source; an electron source disposed in the sample chamber; a shielding plate disposed in front of the electron source; A cleaning device characterized in that the inside of the sample chamber is cleaned by secondary electrons emitted when primary electrons emitted from the electron source collide with the shielding plate, the secondary electrons having an energy of 1 eV or less that cause a desorption phenomenon of a hydrocarbon-based gas.

2. 2. The cleaning device according to claim 1, The cleaning device according to claim 1, wherein the shielding plate is disposed so as to prevent the primary electrons emitted from the electron source from directly irradiating an inside of the sample chamber.

3. 2. The cleaning device according to claim 1, The cleaning device is characterized in that the shielding plate is removable and replaceable.

4. 2. The cleaning device according to claim 1, The cleaning device is characterized in that the shielding plate is made of a material having high secondary electron emission efficiency, or has a surface coated with a material having high secondary electron emission efficiency.

5. 2. The cleaning device according to claim 1, the electron source comprises a filament; The cleaning device according to claim 1, wherein the shielding plate is arranged to change an installation angle with respect to the filament to increase an emission rate of the secondary electrons.

6. 2. The cleaning device according to claim 1, A bias power supply connected to the shield plate is further provided. a negative voltage is applied to the shielding plate by the bias power supply to increase an amount of emitted secondary electrons.

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