Light emitting devices including capping layers and methods for making same - Patents.com

Abstract

To provide a light emitting device including a capping layer, and a method for manufacturing the same.SOLUTION: Provided is an opto-electronic device having a plurality of layers. The opto-electronic device includes: a first capping layer (CPL) comprising a first CPL material and disposed in a first emissive region configured to emit photons having a first wavelength spectrum that is characterized by a first onset wavelength; and a second CPL comprising a second CPL material and disposed in a second emissive region configured to emit photons having a second wavelength spectrum that is characterized by a second onset wavelength. At least one of the first CPL and the first CPL material (CPL (m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength, and at least one of the second CPL and the second CPL material (CPL (m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] Related Applications This application claims the benefit of priority to U.S. Provisional Patent Application No. 62 / 953,442, filed December 24, 2019, the contents of which are incorporated herein by reference in their entirety.

[0002] The present disclosure relates to optoelectronic devices, and in particular to optoelectronic devices having multiple light-emitting regions, each including first and second electrodes separated by a semiconducting layer, and having a capping layer with optical properties modulated to match the emission spectral wavelength range produced by the light-emitting regions. [Background technology]

[0003] In an optoelectronic device, such as an organic light-emitting diode (OLED), at least one semiconducting layer is disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode are electrically coupled to a power source and cause holes and electrons, respectively, to migrate toward each other through the at least one semiconducting layer. When the hole and electron pairs combine, photons may be emitted.

[0004] An OLED display panel may include a number of (sub)pixels, each of which has an associated pair of electrodes. The various layers and coatings of such panels are typically formed by vacuum-based deposition techniques.

[0005] In some applications, it may be desirable to provide a conductive coating and / or electrode coating in a pattern for each (sub)pixel of the panel, across either or both of the lateral and cross-sectional sides of the panel, by selective deposition of a conductive coating to form device features, such as, but not limited to, an electrode and / or a conductive element electrically coupled thereto, during the OLED manufacturing process.

[0006] One method for doing so, in some non-limiting applications, involves the insertion of a fine metal mask (FMM) during deposition of the electrode material and / or conductive elements electrically coupled thereto. However, materials typically used as electrodes have relatively high evaporation temperatures, which impact the ability to reuse the FMM and / or the precision of the patterns that can be achieved, with attendant increases in cost, effort, and complexity.

[0007] One method for doing so involves, in some non-limiting examples, depositing the electrode material and then removing the unwanted areas thereof to form the pattern, including by a laser drilling process. However, the removal process often involves the creation and / or presence of debris, which may affect the yield of the manufacturing process.

[0008] Furthermore, such methods may not be suitable for use in some applications and / or with some devices having particular topological features.

[0009] In some applications, it may be desirable to provide an optoelectronic device having multiple light-emitting regions, each having optical characteristics modulated to match the wavelength spectrum emitted by the optoelectronic device. Summary of the Invention [Means for solving the problem]

[0010] It is an object of the present disclosure to obviate or mitigate at least one of the disadvantages of the prior art.

[0011] The present disclosure discloses an optoelectronic device having multiple layers. A first capping layer (CPL) includes a first CPL material and is disposed within a first light-emitting region. A second CPL includes a second CPL material and is disposed within a second light-emitting region. The first light-emitting region is configured to emit photons having a first wavelength spectrum characterized by a first starting wavelength. The second light-emitting region is configured to emit photons having a second wavelength spectrum characterized by a second starting wavelength. At least one of the first CPL and the first CPL material (collectively "CPL(m)1") exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first starting wavelength. At least one of the second CPL and the second CPL material (collectively "CPL(m)2") exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second starting wavelength.

[0012] In accordance with a broad aspect of the present disclosure, an optoelectronic device having multiple layers is disclosed, the first capping layer (CPL) comprising a first CPL disposed within a first light-emitting region, the first light-emitting region configured to emit photons having a first wavelength spectrum characterized by a first start wavelength; and a second CPL comprising a second CPL material disposed within a second light-emitting region, the second light-emitting region configured to emit photons having a second wavelength spectrum characterized by a second start wavelength, wherein at least one of the first CPL and first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first start wavelength, and at least one of the second CPL and second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second start wavelength.

[0013] In some non-limiting examples, the first onset wavelength may be shorter than the second onset wavelength. In some non-limiting examples, the first absorption edge wavelength is shorter than the second absorption edge wavelength.

[0014] In some non-limiting examples, the first absorption edge can be characterized by a first absorption wavelength at which the extinction coefficient k of CPL(m)1 is equal to a threshold value, and the second absorption edge can be characterized by a second absorption wavelength at which the extinction coefficient k of CPL(m)2 is equal to a threshold value.

[0015] In some non-limiting examples, the first onset wavelength may be longer than the first absorption edge wavelength by at least one of about 50 nm, about 40 nm, about 35 nm, about 30 nm, about 25 nm, about 20 nm, about 15 nm, about 10 nm, about 5 nm, and about 3 nm. In some non-limiting examples, the first absorption wavelength may be the longest wavelength of at least one wavelength at which the extinction coefficient of CPL(m)1 is equal to a threshold value. In some non-limiting examples, the first derivative of the extinction coefficient of CPL(m)1 as a function of wavelength may be negative at the first absorption wavelength. In some non-limiting examples, the extinction coefficient of CPL(m)1 at wavelengths longer than the first absorption wavelength may be less than a threshold value. In some non-limiting examples, the extinction coefficient of CPL(m)1 at all wavelengths longer than the first absorption wavelength may be less than a threshold value. In some non-limiting examples, the extinction coefficient of CPL(m)1 at any wavelength longer than the first starting wavelength may be less than at least one of about 0.1, about 0.09, about 0.08, about 0.06, about 0.05, about 0.03, about 0.01, about 0.005, and about 0.0001. In some non-limiting examples, the extinction coefficient of CPL(m)1 at a wavelength shorter than the first absorption edge wavelength may be greater than at least one of about 0.1, about 0.12, about 0.13, about 0.15, about 0.18, about 0.2, about 0.25, about 0.3, about 0.5, about 0.7, about 0.75, about 0.8, about 0.9, and about 1.0.

[0016] In some non-limiting examples, the refractive index of CPL(m)1 for at least one wavelength longer than the first absorption edge wavelength may exceed the refractive index of CPL(m)1 for at least one wavelength shorter than the first absorption edge wavelength. In some non-limiting examples, the refractive index of CPL(m) at at least one wavelength in the first wavelength spectrum may exceed at least one of about 1.8, about 1.9, about 1.95, about 2, about 2.05, about 2.1, about 2.2, about 2.3, and about 2.5.

[0017] In some non-limiting examples, the second start wavelength may be longer than the second absorption edge wavelength by at least one of about 200 nm, about 150 nm, about 130 nm, about 100 nm, about 80 nm, about 70 nm, about 60 nm, about 50 nm, about 40 nm, about 35 nm, about 25 nm, about 20 nm, about 15 nm, and about 10 nm. In some non-limiting examples, the second absorption wavelength may be the longest wavelength of at least one wavelength at which the extinction coefficient of CPL(m)2 is equal to a threshold value. In some non-limiting examples, the first derivative of the extinction coefficient of CPL(m)2 as a function of wavelength may be negative at the second absorption wavelength. In some non-limiting examples, the extinction coefficient of CPL(m)2 at wavelengths longer than the second absorption wavelength may be less than a threshold value. In some non-limiting examples, the extinction coefficient of CPL(m)2 at all wavelengths longer than the second absorption wavelength may be less than a threshold value. In some non-limiting examples, the extinction coefficient of CPL(m)2 at any wavelength longer than the second starting wavelength may be less than at least one of about 0.1, about 0.09, about 0.08, about 0.06, about 0.05, about 0.03, about 0.01, about 0.005, and about 0.0001. In some non-limiting examples, the extinction coefficient of CPL(m)2 at a wavelength shorter than the second absorption edge wavelength may be greater than at least one of about 0.1, about 0.12, about 0.13, about 0.15, about 0.18, about 0.2, about 0.25, about 0.3, about 0.5, about 0.7, about 0.75, about 0.8, about 0.9, and about 1.0.

[0018] In some non-limiting examples, the refractive index of CPL(m)2 for at least one wavelength longer than the second absorption edge wavelength may exceed the refractive index of CPL(m)2 for at least one wavelength shorter than the second absorption edge wavelength. In some non-limiting examples, the refractive index of CPL(m)2 at at least one wavelength in the second wavelength spectrum may exceed at least one of about 1.8, about 1.9, about 1.95, about 2, about 2.05, about 2.1, about 2.2, about 2.3, and about 2.5.

[0019] In some non-limiting examples, the extinction coefficient of CPL(m)1 may be less than a threshold value at the second starting wavelength. In some non-limiting examples, the extinction coefficient of CPL(m)1 may be less than a threshold value at all wavelengths in the second wavelength spectrum. In some non-limiting examples, the extinction coefficient of CPL(m)1 at any wavelength in the second wavelength spectrum may be less than at least one of about 0.1, about 0.09, about 0.08, about 0.05, about 0.05, about 0.03, about 0.01, about 0.005, and about 0.001.

[0020] In some non-limiting examples, the refractive index of CPL(m)1 for at least one wavelength in the first wavelength spectrum may exceed the refractive index of CPL(m)1 for at least one wavelength in the second wavelength spectrum. In some non-limiting examples, the refractive index of CPL(m)2 for at least one wavelength in the second wavelength spectrum may exceed the refractive index of CPL(m)2 for at least one wavelength in the first wavelength spectrum. In some non-limiting examples, the refractive index of CPL(m)1 for at least one wavelength in the second wavelength spectrum may be less than at least one of about 1.8, about 1.7, about 1.65, about 1.6, about 1.5, about 1.45, about 1.4, and about 1.3. In some non-limiting examples, the refractive index of CPL(m)2 at at least one wavelength in the first wavelength spectrum may be less than at least one of about 1.8, about 1.7, about 1.65, about 1.6, about 1.5, about 1.45, about 1.4, and about 1.3.

[0021] In some non-limiting examples, the extinction coefficient of CPL(m)2 may exceed the extinction coefficient of CPL(m)1 for at least one wavelength in the first wavelength spectrum. In some non-limiting examples, the extinction coefficient of CPL(m)2 may exceed the extinction coefficient of CPL(m)1 for every wavelength in the first wavelength spectrum.

[0022] In some non-limiting examples, the threshold value may be at least one of 0.1, 0.09, 0.08, 0.06, 0.05, 0.03, 0.01, 0.005, and 0.001.

[0023] In some non-limiting examples, the first light emitting region and the second light emitting region can occupy different regions of the device on a lateral side.

[0024] In some non-limiting examples, the first wavelength spectrum and the second wavelength spectrum are located in the visible spectrum. In some non-limiting examples, the first wavelength spectrum can have a first peak wavelength and the second wavelength spectrum can have a second peak wavelength that is longer than the first peak wavelength.

[0025] In some non-limiting examples, the first starting wavelength can be the shortest of at least one wavelength where the intensity of the first wavelength spectrum can be at least one of about 20%, about 15%, about 10%, about 5%, about 3%, about 1%, and about 0.01% of the intensity at the first peak wavelength. In some non-limiting examples, the second starting wavelength can be the shortest of at least one wavelength where the intensity of the second wavelength spectrum can be at least one of about 20%, about 15%, about 10%, about 5%, about 3%, about 1%, and about 0.01% of the intensity at the second peak wavelength.

[0026] In some non-limiting examples, the first wavelength spectrum may correspond to a color that is at least one of B (blue) and G (green). In some non-limiting examples, the second wavelength spectrum may correspond to a color that is at least one of R (red) and G (green). In some non-limiting examples, the first wavelength spectrum may correspond to a color that is B (blue) and the second wavelength spectrum may correspond to a color that is at least one of G (green) and R (red). In some non-limiting examples, the first wavelength spectrum may correspond to a color that is G (green) and the second wavelength spectrum may correspond to a color that is R (red).

[0027] In some non-limiting examples, the first CPL material can have a different composition than the second CPL material.

[0028] In some non-limiting examples, the thickness of the first CPL can be the same as the thickness of the second CPL. In some non-limiting examples, the thickness of the first CPL can be different from the thickness of the second CPL.

[0029] In some non-limiting examples, the thickness of the first CPL may range from about 5 to about 120 nm. In some non-limiting examples, the thickness of the first CPL may be greater than at least one of about 10 nm, about 15 nm, about 20 nm, about 25 nm, about 30 nm, and about 40 nm. In some non-limiting examples, the thickness of the first CPL may be less than at least one of about 100 nm, about 90 nm, about 80 nm, and about 70 nm.

[0030] In some non-limiting examples, the thickness of the second CPL may range from about 5 nm to about 120 nm. In some non-limiting examples, the thickness of the second CPL may be greater than at least one of about 10 nm, about 15 nm, about 20 nm, about 25 nm, about 30 nm, and about 40 nm. In some non-limiting examples, the thickness of the second CPL may be less than about 100 nm, about 90 nm, about 80 nm, and about 70 nm.

[0031] In some non-limiting examples, the device may further include at least one electrode coating in the first light-emitting region and the second light-emitting region. In some non-limiting examples, the first CPL may be disposed on an exposed layer surface of the at least one electrode coating. In some non-limiting examples, the second CPL may be disposed on an exposed layer surface of the at least one electrode coating. In some non-limiting examples, the at least one electrode coating may have a first electrode thickness in the first light-emitting region. In some non-limiting examples, the at least one electrode coating may have a second electrode thickness in the second light-emitting region.

[0032] In some non-limiting examples, the first electrode thickness may be less than the second electrode thickness. In some non-limiting examples, the quotient of the first electrode thickness divided by the second electrode thickness may be less than at least one of about 0.9, about 0.8, about 0.7, about 0.6, about 0.5, about 0.4, about 0.3, and about 0.2. In some non-limiting examples, the first electrode thickness may be in a range that is at least one of about 5 nm to about 100 nm, about 5 nm to about 50 nm, about 5 nm to about 25 nm, about 5 nm to about 20 nm, about 5 nm to about 15 nm, about 8 nm to about 15 nm, about 8 nm to about 12 nm, and about 8 nm to about 10 nm. In some non-limiting examples, the second electrode thickness can be in the range of at least one of about 10 nm to about 60 nm, about 10 nm to about 50 nm, about 15 nm to about 40 nm, about 15 nm to about 35 nm, and about 20 nm to about 35 nm.

[0033] In some non-limiting examples, the second electrode thickness may be less than the first electrode thickness. In some non-limiting examples, the quotient of the second electrode thickness divided by the first electrode thickness may be less than at least one of about 0.9, about 0.8, about 0.7, about 0.6, about 0.5, about 0.4, about 0.3, and about 0.2. In some non-limiting examples, the first electrode thickness may be in a range that is at least one of about 10 nm to about 60 nm, about 10 nm to about 50 nm, about 15 nm to about 40 nm, about 15 nm to about 35 nm, and about 20 nm to about 35 nm. In some non-limiting examples, the second electrode thickness can be in the range of at least one of about t nm to about 100 nm, about 5 nm to about 50 nm, about 5 nm to about 25 nm, about 5 nm to about 20 nm, about 5 nm to about 15 nm, about 8 nm to about 15 nm, about 8 nm to about 12 nm, and about 8 nm to about 10 nm.

[0034] In some non-limiting examples, the at least one electrode coating can include a metal coating and a conductive coating disposed on an exposed layer surface of the metal coating. In some non-limiting examples, the conductive coating can extend between the metal coating and a second CPL in the second light-emitting region. In some non-limiting examples, the first CPL can be disposed on an exposed layer surface of the metal coating in the first light-emitting region. In some non-limiting examples, the conductive coating can extend between the metal coating and the first CPL in the first light-emitting region.

[0035] In some non-limiting examples, the metal coating can be comprised of a metal coating material. In some non-limiting examples, the metal coating material can include a metal that has a bond dissociation energy in its diatomic molecules at 298 K of at least one of at least 10 kJ / mol, at least 50 kJ / mol, at least 100 kJ / mol, at least 150 kJ / mol, at least 180 kJ / mol, and at least 200 kJ / mol. In some non-limiting examples, the metal coating material can include an element that has an electronegativity less than at least one of about 1.4, about 1.3, and about 1.2.

[0036] In some non-limiting examples, the metal coating material may include an element selected from potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), tungsten (W), and any combination of any of these. In some non-limiting examples, the element may be selected from Cu, Ag, Au, and any combination of any of these. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may be selected from Mg, Zn, Cd, Yb, and any combination of any of these. In some non-limiting examples, the element may be selected from Sn, Ni, Ti, Pd, Cr, Fe, Co, and any combination of any of these. In some non-limiting examples, the element may be selected from Zr, Pt, V, Nb, Ir, Os, and any combination of any of these. In some non-limiting examples, the element may be selected from Ta, Mo, W, and any combination of any of these. In some non-limiting examples, the element may be selected from Mg, Ag, Al, Yb, Li, and any combination of any of these. In some non-limiting examples, the element may be selected from any one of Mg, Ag, Al, Yb, and any combination of any of these. In some non-limiting examples, the element may be selected from Mg, Ag, Yb, and any combination of any of these. In some non-limiting examples, the element can be selected from Mg, Ag, and any combination of any of these. In some non-limiting examples, the element can be Ag.

[0037] In some non-limiting examples, the metal coating material may include a pure metal. In some non-limiting examples, the pure metal may be at least one of pure silver (Ag) and substantially pure Ag. In some non-limiting examples, the pure metal may be at least one of pure magnesium (Mg) and substantially pure Mg. In some non-limiting examples, the pure metal may be at least one of pure aluminum (Al) and substantially pure Al.

[0038] In some non-limiting examples, the metallic coating material can include an alloy, which can be at least one of a silver (Ag)-containing alloy and a silver-magnesium (AgMg)-containing alloy.

[0039] In some non-limiting examples, the metal coating can include oxygen (O). In some non-limiting examples, the metal coating can include O and at least one metal. In some non-limiting examples, the metal coating can include a metal oxide. In some non-limiting examples, the metal oxide can include zinc (Zn), indium (I), tin (Sn), antimony (Sb), gallium (Ga), and any combination of any of these. In some non-limiting examples, the metal oxide can be a transparent conductive oxide (TCO). In some non-limiting examples, the TCO can be at least one of indium titanium oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and any combination of any of these.

[0040] In some non-limiting examples, the metal coating may include multiple layers of a metal coating material. In some non-limiting examples, the metal coating material of a first layer of the plurality of layers may be different from the metal coating material of a second layer of the plurality of layers. In some non-limiting examples, the metal coating material of at least one of the plurality of layers may include ytterbium (Yb). In some non-limiting examples, the metal coating material of another layer of the plurality of layers may include at least one of a silver (Ag)-containing alloy and a silver-magnesium (AgMg)-containing alloy. In some non-limiting examples, the metal coating material of another layer of the plurality of layers may include at least one of pure silver (Ag), substantially pure (Ag), pure magnesium (Mg), substantially pure Mg, and any combination of any of these. In some non-limiting examples, the metal coating material of one of the layers proximal to the NIC includes an element selected from silver (Ag), gold (Au), copper (Cu), aluminum (Al), tin (Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), tungsten (W), and any combination of any of these. In some non-limiting examples, the element may include Cu, Ag, Au, and any combination of any of these. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Sn, Ti, Pd, Cr, Fe, Co, and any combination of any of these. In some non-limiting examples, the elements may include Ni, Zr, Pt, V, Nb, Ir, Os, and any combination of any of these. In some non-limiting examples, the elements may include Ta, Mo, W, and any combination of any of these. In some non-limiting examples, the elements may include Mg, Ag, Al, and any combination of any of these.In some non-limiting examples, the element can include Mg, Ag, and any combination of any of these. In some non-limiting examples, the element can be Ag. In some non-limiting examples, at least one of the layers can include a metal having a work function that is less than about 4 eV.

[0041] In some non-limiting examples, the conductive coating can be comprised of a conductive coating material that can include a metal having a bond dissociation energy in its diatomic molecules at 298 K of less than 300 kJ / mol, less than 200 kJ / mol, less than 165 kJ / mol, less than 150 kJ / mol, less than 100 kJ / mol, less than 50 kJ / mol, and less than 20 kJ / mol.

[0042] In some non-limiting examples, the conductive coating material may include an element selected from potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), yttrium (Y), and any combination of any of these. In some non-limiting examples, the element may be selected from K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, and any combination of any of these. In some non-limiting examples, the element may be selected from Cu, Ag, Au, and any combination of any of these. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may be selected from Mg, Zn, Cd, Yb, and any combination of any of these. In some non-limiting examples, the element may be selected from Mg, Ag, Al, Yb, Li, and any combination of any of these. In some non-limiting examples, the element may be selected from Mg, Ag, Yb, and any combination of any of these. In some non-limiting examples, the element may be selected from Mg, Ag, and any combination of any of these. In some non-limiting examples, the element may be Ag.

[0043] In some non-limiting examples, the conductive coating material may include a pure metal. In some non-limiting examples, the pure metal may be at least one of pure silver (Ag) and substantially pure Ag. In some non-limiting examples, the substantially pure Ag may have a purity of at least one of at least about 95%, at least about 98%, at least about 99%, at least about 99.9%, at least about 99.99%, at least about 99.999%, and at least about 99.9995%. In some non-limiting examples, the pure metal may be at least one of pure magnesium (Mg) and substantially pure Mg. In some non-limiting examples, the substantially pure Mg may have a purity of at least one of at least about 95%, at least about 98%, at least about 99%, at least about 99.9%, at least about 99.99%, at least about 99.999%, and at least about 99.9995%.

[0044] In some non-limiting examples, the conductive coating can include an alloy, which can be at least one of a silver (Ag)-containing alloy, a magnesium (Mg)-containing alloy, and an AgMg-containing alloy.

[0045] In some non-limiting examples, the conductive coating may include a non-metallic element. In some non-limiting examples, the non-metallic element may be selected from at least one of oxygen (O), sulfur (S), nitrogen (N), carbon (C), and any combination of any of the foregoing. In some non-limiting examples, the concentration of the non-metallic element in the conductive coating material may be less than at least one of about 1%, about 0.1%, about 0.01%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and about 0.0000001%.

[0046] In some non-limiting examples, the device can further include a semiconductive layer, with at least one electrode coating extending between the semiconductive layer and the first CPL in the first light-emitting region and between the semiconductive layer and the second CPL in the second light-emitting region. In some non-limiting examples, at least one of the first CPL and the second CPL can include a nucleation-inhibiting coating (NIC) to pattern the conductive coating.

[0047] In some non-limiting examples, the second CPL can be disposed in the first light-emitting region. In some non-limiting examples, the first CPL can extend between at least one electrode coating and the second CPL in the first light-emitting region. In some non-limiting examples, the second CPL can extend between at least one electrode coating and the first CPL in the first light-emitting region.

[0048] In some non-limiting examples, the first CPL can be disposed in the second light-emitting region. In some non-limiting examples, the first CPL can extend between at least one electrode coating and the second CPL in the second light-emitting region. In some non-limiting examples, the second CPL can extend between at least one electrode coating and the first CPL in the second light-emitting region.

[0049] In some non-limiting examples, the device may further include a third light-emitting region configured to emit photons having a third wavelength spectrum characterized by a third starting wavelength. In some non-limiting examples, the third wavelength spectrum may have a third peak wavelength that is shorter than the second peak wavelength of the second wavelength spectrum and longer than the first peak wavelength of the first wavelength spectrum. In some non-limiting examples, the first wavelength spectrum may correspond to a color that is B (blue), the second wavelength spectrum may correspond to a color that is G (green), and the third wavelength spectrum may correspond to a color that is R (red).

[0050] In some non-limiting examples, at least one of the first CPL and the second CPL can be disposed in the third light-emitting region. In some non-limiting examples, the third CPL can be disposed in the third light-emitting region. In some non-limiting examples, at least one of the third CPL and the third CPL material (CPL(m)3) can exhibit a third absorption edge at a third absorption edge wavelength that is shorter than the third onset wavelength.

[0051] In some non-limiting examples, the third absorption edge can be characterized by a third absorption wavelength at which the extinction coefficient of CPL(m)3 is equal to a threshold value.

[0052] In some non-limiting examples, the third start wavelength may be longer than the absorption edge wavelength by at least one of about 200 nm, about 150 nm, about 130 nm, about 100 nm, about 80 nm, about 70 nm, about 60 nm, about 50 nm, about 40 nm, about 35 nm, about 25 nm, about 20 nm, about 15 nm, and about 10 nm. In some non-limiting examples, the third absorption wavelength is the longest wavelength of the at least one wavelength at which the extinction coefficient of CPL(m)3 is equal to a threshold value. In some non-limiting examples, the first derivative of the extinction coefficient of CPL(m)3 as a function of wavelength may be negative at the third absorption wavelength. In some non-limiting examples, the extinction coefficient of CPL(m)3 at wavelengths longer than the third absorption wavelength may be less than a threshold value. In some non-limiting examples, the extinction coefficient of CPL(m)3 at all wavelengths longer than the third absorption wavelength may be less than a threshold value. In some non-limiting examples, the extinction coefficient of CPL(m)3 at any wavelength longer than the third starting wavelength may be less than at least one of about 0.1, about 0.09, about 0.08, about 0.06, about 0.05, about 0.03, about 0.01, about 0.005, and about 0.0001. In some non-limiting examples, the extinction coefficient of CPL(m)3 at a wavelength shorter than the first absorption edge wavelength may be greater than at least one of about 0.1, about 0.12, about 0.13, about 0.15, about 0.18, about 0.2, about 0.25, about 0.3, about 0.5, about 0.7, about 0.75, about 0.8, about 0.9, and about 1.0.

[0053] In some non-limiting examples, the refractive index of CPL(m)3 for at least one wavelength longer than the third absorption edge wavelength may exceed the refractive index of CPL(m)3 for at least one wavelength shorter than the first absorption edge wavelength. In some non-limiting examples, the refractive index of CPL(m)3 at at least one wavelength in the third wavelength spectrum may exceed at least one of about 1.8, about 1.9, about 1.95, about 2, about 2.05, about 2.1, about 2.2, about 2.3, and about 2.5.

[0054] In some non-limiting examples, the third light-emitting region can be substantially free of at least one of the first CPL and the second CPL.

[0055] The embodiments are described above in conjunction with the aspects of the present disclosure in which they can be implemented. Those skilled in the art will understand that the embodiments can be implemented in conjunction with the aspects in which they are described, but can also be implemented with other embodiments of that aspect or another aspect. When the embodiments are mutually exclusive or otherwise incompatible with each other, it will be apparent to those skilled in the art. Some embodiments may be described in relation to one aspect, but may also be applicable to other aspects, as will be apparent to those skilled in the art.

[0056] Some aspects or embodiments of the present disclosure can provide an optoelectronic device having first and second light-emitting regions having respective emission spectra onto which are deposited respective capping layers (CPLs), the optical properties of which can be selected to modify at least one optical microcavity effect of the underlying light-emitting regions. The CPL can include a patterned coating having an initial adhesion probability for forming a conductive coating on its surface that is substantially less than an initial adhesion probability for forming a conductive coating on a base surface, such that the CPL is substantially free of the conductive coating subsequently deposited thereon. The present invention provides, for example, the following: (Item 1) 1. An optoelectronic device having a plurality of layers, comprising: a first capping layer (CPL) material and disposed within a first light-emitting region, the first CPL being configured to emit photons having a first wavelength spectrum characterized by a first starting wavelength; a second CPL comprising a second CPL material and disposed within a second light-emitting region, the second light-emitting region configured to emit photons having a second wavelength spectrum characterized by a second starting wavelength; at least one of the first CPL and the first CPL material (CPL(m)1) exhibits a first absorption edge at a first absorption edge wavelength that is shorter than the first onset wavelength; an optoelectronic device, wherein at least one of the second CPL and the second CPL material (CPL(m)2) exhibits a second absorption edge at a second absorption edge wavelength that is shorter than the second onset wavelength. (Item 2) Item 2. The optoelectronic device of item 1, wherein the first start wavelength is shorter than the second start wavelength. (Item 3) 3. The optoelectronic device according to item 1 or 2, wherein the first absorption edge wavelength is shorter than the second absorption edge wavelength. (Item 4) 4. The optoelectronic device according to any one of items 1 to 3, wherein the first absorption edge is characterized by a first absorption wavelength at which an extinction coefficient of the CPL(m)1) is equal to a threshold value, and the second absorption edge is characterized by a second absorption wavelength at which an extinction coefficient of the CPL(m)2) is equal to the threshold value. (Item 5) 5. The optoelectronic device of claim 4, wherein the first onset wavelength is longer than the first absorption edge wavelength by less than at least one of about 50 nm, about 40 nm, about 35 nm, about 30 nm, about 25 nm, about 20 nm, about 15 nm, about 10 nm, about 5 nm, and about 3 nm. (Item 6) 7. The optoelectronic device of claim 4 or 5, wherein the first extinction wavelength is the longest wavelength of at least one wavelength at which the extinction coefficient of the CPL(m)1 is equal to the threshold value. 7. The optoelectronic device of any one of items 4 to 6, wherein the first derivative of the extinction coefficient of the CPL(m)1 as a function of wavelength is negative at the first extinction wavelength. (Item 8) 8. The optoelectronic device according to any one of items 4 to 7, wherein the extinction coefficient of the CPL(m)1 at a wavelength longer than the first absorption wavelength is less than the threshold value. (Item 9) 9. The optoelectronic device according to any one of items 4 to 8, wherein the extinction coefficient of the CPL(m)1 at all wavelengths longer than the first absorption wavelength is less than the threshold value. (Item 10) 10. The optoelectronic device of any one of items 4 to 9, wherein the extinction coefficient of the CPL(m)1 at any wavelength longer than the first start wavelength is less than at least one of about 0.1, about 0.09, about 0.08, about 0.06, about 0.05, about 0.03, about 0.01, about 0.005, and about 0.0001. (Item 11) 11. The optoelectronic device according to any one of items 4 to 10, wherein the extinction coefficient of the CPL(m)1 at a wavelength shorter than the first absorption edge wavelength is greater than at least one of about 0.1, about 0.12, about 0.13, about 0.15, about 0.18, about 0.2, about 0.25, about 0.3, about 0.5, about 0.7, about 0.75, about 0.8, about 0.9, and about 1.0. (Item 12) Item 12. The optoelectronic device according to any one of items 4 to 11, wherein the refractive index of the CPL(m)1 for at least one wavelength longer than the first absorption edge wavelength exceeds the refractive index of the CPL(m)1 for at least one wavelength shorter than the first absorption edge wavelength. (Item 13) 13. The optoelectronic device of any one of items 4 to 12, wherein the refractive index of the CPL(m)1 at at least one wavelength in the first wavelength spectrum is greater than at least one of about 1.8, about 1.9, about 1.95, about 2, about 2.05, about 2.1, about 2.2, about 2.3, and about 2.5. (Item 14) Item 14. The optoelectronic device according to any one of items 4 to 13, wherein the second start wavelength is longer than the second absorption edge wavelength by at least one of about 200 nm, about 150 nm, about 130 nm, about 100 nm, about 80 nm, about 70 nm, about 60 nm, about 50 nm, about 40 nm, about 35 nm, about 25 nm, about 20 nm, about 15 nm, and about 10 nm. (Item 15) Item 15. The optoelectronic device of any one of items 4 to 14, wherein the second absorption wavelength is the longest wavelength among at least one wavelength at which the extinction coefficient of the CPL(m)2 is equal to the threshold value. (Item 16) Item 16. The optoelectronic device of any one of items 4 to 15, wherein the first derivative of the extinction coefficient of the CPL(m)2 as a function of wavelength is negative at the second extinction wavelength. (Item 17) Item 17. The optoelectronic device according to any one of items 4 to 16, wherein the extinction coefficient of the CPL(m)2 at a wavelength longer than the second absorption wavelength is less than the threshold value. (Item 18) Item 18. The optoelectronic device according to any one of items 4 to 17, wherein the extinction coefficient of the CPL(m)2 at all wavelengths longer than the second absorption wavelength is less than the threshold value. (Item 19) 19. The optoelectronic device of any one of items 4 to 18, wherein the extinction coefficient of the CPL(m)2 at any wavelength longer than the second start wavelength is less than at least one of about 0.1, about 0.09, about 0.08, about 0.06, about 0.05, about 0.03, about 0.01, about 0.005, and about 0.0001. (Item 20) 20. The optoelectronic device according to any one of items 4 to 19, wherein the extinction coefficient of the CPL(m)2 at a wavelength shorter than the second absorption edge wavelength is greater than at least one of about 0.1, about 0.12, about 0.13, about 0.15, about 0.18, about 0.2, about 0.25, about 0.3, about 0.5, about 0.7, about 0.75, about 0.8, about 0.9, and about 1.0. (Item 21) 21. The optoelectronic device according to any one of items 4 to 20, wherein the refractive index of the CPL(m)2 for at least one wavelength longer than the second absorption edge wavelength exceeds the refractive index of the CPL(m)1 for at least one wavelength shorter than the second absorption edge wavelength. (Item 22) 22. The optoelectronic device of any one of items 4 to 21, wherein the refractive index of the CPL(m)2 at at least one wavelength in the second wavelength spectrum is greater than at least one of about 1.8, about 1.9, about 1.95, about 2, about 2.05, about 2.1, about 2.2, about 2.3, and about 2.5. (Item 23) 23. The optoelectronic device of any one of items 4 to 22, wherein the extinction coefficient of the CPL(m)1 is less than the threshold value at the second start wavelength. (Item 24) 24. The optoelectronic device according to any one of items 4 to 23, wherein the extinction coefficient of the CPL(m)1 is less than the threshold value at all wavelengths in the second wavelength spectrum. (Item 25) 25. The optoelectronic device of any one of items 4 to 24, wherein the extinction coefficient of the CPL(m)1 at any wavelength in the second wavelength spectrum is less than at least one of about 0.1, about 0.09, about 0.08, about 0.06, about 0.05, about 0.03, about 0.01, about 0.005, and about 0.001. (Item 26) 26. The optoelectronic device of any one of items 4 to 25, wherein the refractive index of the CPL(m)1 for at least one wavelength in the first wavelength spectrum exceeds the refractive index of the CPL(m)1 for at least one wavelength in the second wavelength spectrum. (Item 27) 27. The optoelectronic device of any one of items 4 to 26, wherein the refractive index of the CPL(m)2 for at least one wavelength in the second wavelength spectrum exceeds the refractive index of the CPL(m)2 for at least one wavelength in the first wavelength spectrum. (Item 28) 28. The optoelectronic device of any one of items 4 to 27, wherein the refractive index of the CPL(m)1 for at least one wavelength in the second wavelength spectrum is less than at least one of about 1.8, about 1.7, about 1.65, about 1.6, about 1.5, about 1.45, about 1.4, and about 1.3. (Item 29) 29. The optoelectronic device of any one of items 4 to 28, wherein the refractive index of the CPL(m)2 at at least one wavelength in the first wavelength spectrum is less than at least one of about 1.8, about 1.7, about 1.65, about 1.6, about 1.5, about 1.45, about 1.4, and about 1.3. (Item 30) 30. The optoelectronic device of any one of items 4 to 29, wherein the extinction coefficient of CPL(m)2 exceeds the extinction coefficient of CPL(m)1 for at least one wavelength in the first wavelength spectrum. (Item 31) 31. The optoelectronic device of any one of items 4 to 30, wherein the extinction coefficient of CPL(m)2 exceeds the extinction coefficient of CPL(m)1 for every wavelength in the first wavelength spectrum. (Item 32) 32. The optoelectronic device according to any one of items 4 to 31, wherein the threshold value is at least one of 0.1, 0.09, 0.08, 0.06, 0.05, 0.03, 0.01, 0.005, and 0.001. (Item 33) Item 33. The optoelectronic device of any one of items 1 to 32, wherein the first light emitting region and the second light emitting region occupy different regions of the device on a lateral side. (Item 34) Item 34. The optoelectronic device according to any one of items 1 to 33, wherein the first wavelength spectrum and the second wavelength range are located in the visible spectrum. (Item 35) 35. The optoelectronic device according to any one of items 1 to 34, wherein the first wavelength spectrum has a first peak wavelength, and the second wavelength spectrum has a second peak wavelength that is longer than the first peak wavelength. (Item 36) Item 36. The optoelectronic device of item 35, wherein the first start wavelength is the shortest wavelength of at least one wavelength at which the intensity of the first wavelength spectrum is at least one of about 20%, about 15%, about 10%, about 5%, about 3%, about 1%, and about 0.1% of the intensity at the first peak wavelength. (Item 37) 37. The optoelectronic device of item 35 or 36, wherein the second start wavelength is the shortest of at least one wavelength at which the intensity of the second wavelength spectrum is at least one of about 20%, about 15%, about 10%, about 5%, about 3%, about 1%, and about 0.1% of the intensity at the second peak wavelength. (Item 38) Item 38. The optoelectronic device of any one of items 1 to 37, wherein the first wavelength spectrum corresponds to a color that is at least one of B (blue) and G (green). (Item 39) Item 39. The optoelectronic device of any one of items 1 to 38, wherein the second wavelength spectrum corresponds to a color that is at least one of R (red) and G (green). (Item 40) Item 40. The optoelectronic device according to any one of items 1 to 39, wherein the first wavelength spectrum corresponds to a color that is B (blue) and the second wavelength spectrum corresponds to a color that is at least one of G (green) and R (red). (Item 41) 41. The optoelectronic device according to any one of items 1 to 40, wherein the first wavelength spectrum corresponds to a color that is G (green) and the second wavelength spectrum corresponds to a color that is R (red). (Item 42) Item 42. The optoelectronic device of any one of items 1-41, wherein the first CPL material has a different composition than the second CPL material. (Item 43) Item 43. The optoelectronic device of any one of items 1 to 42, wherein a thickness of the first CPL is the same as a thickness of the second CPL. (Item 44) Item 43. The optoelectronic device of any one of items 1 to 42, wherein a thickness of the first CPL is different from a thickness of the second CPL. (Item 45) Item 45. The optoelectronic device according to any one of items 1 to 44, wherein the thickness of the first CPL is in the range of about 5 nm to about 120 nm. (Item 46) 46. ​​The optoelectronic device of any one of items 1 to 45, wherein the thickness of the first CPL is greater than at least one of about 10 nm, about 15 nm, about 20 nm, about 25 nm, about 30 nm, and about 40 nm. (Item 47) 47. The optoelectronic device of any one of items 1 to 46, wherein the thickness of the first CPL is less than at least one of about 100 nm, about 90 nm, about 80 nm, and about 70 nm. (Item 48) Item 48. The optoelectronic device of any one of items 1 to 47, wherein the thickness of the second CPL is in the range of about 5 nm to about 120 nm. (Item 49) Item 49. The optoelectronic device of any one of items 1 to 48, wherein the thickness of the second CPL is greater than at least one of about 10 nm, about 15 nm, about 20 nm, about 25 nm, about 30 nm, and about 40 nm. (Item 50) Item 50. The optoelectronic device of any one of items 1-49, wherein the thickness of the second CPL is less than at least one of about 100 nm, about 90 nm, about 80 nm, and about 70 nm. (Item 51) 51. The optoelectronic device of any one of the preceding claims, further comprising at least one electrode coating in the first and second light emitting regions. (Item 52) Item 52. The optoelectronic device of any one of items 1 to 51, wherein the first CPL is disposed on an exposed layer surface of the at least one electrode coating. (Item 53) Item 53. The optoelectronic device of item 52, wherein the second CPL is disposed on an exposed layer surface of the at least one electrode coating. (Item 54) Item 54. The optoelectronic device of item 52 or 53, wherein the at least one electrode coating has a first electrode thickness in the first light-emitting region. (Item 55) Item 55. The optoelectronic device of item 54, wherein the at least one electrode coating has a second electrode thickness in the second light-emitting region. (Item 56) Item 56. The optoelectronic device of item 55, wherein the first electrode thickness is less than the second electrode thickness. (Item 57) Item 57. The optoelectronic device of item 56, wherein the quotient of the first electrode thickness divided by the second electrode thickness is less than at least one of about 0.9, about 0.8, about 0.7, about 0.6, about 0.5, about 0.4, about 0.3, and about 0.2. (Item 58) Item 58. The optoelectronic device according to item 56 or 57, wherein the first electrode thickness is in at least one of the following ranges: about 5 nm to about 100 nm, about 5 nm to about 50 nm, about 5 nm to about 25 nm, about 5 nm to about 20 nm, about 5 nm to about 15 nm, about 8 nm to about 15 nm, about 8 nm to about 12 nm, and about 8 nm to about 10 nm. (Item 59) The optoelectronic device according to any one of items 56 to 58, wherein the second electrode has a thickness in the range of at least one of about 10 nm to about 60 nm, about 10 nm to about 50 nm, about 15 nm to about 40 nm, about 15 nm to about 35 nm, and about 20 nm to about 35 nm. Item 56. The optoelectronic device of item 55, wherein the second electrode thickness is less than the first electrode thickness. (Item 61) Item 61. The optoelectronic device of item 60, wherein the quotient of the second electrode thickness divided by the first electrode thickness is less than about at least one of about 0.9, about 0.8, about 0.7, about 0.6, about 0.5, about 0.4, about 0.3, and about 0.2. (Item 62) Item 62. The optoelectronic device according to item 60 or 61, wherein the first electrode thickness is in the range of at least one of about 10 nm to about 60 nm, about 10 nm to about 50 nm, about 15 nm to about 40 nm, about 15 nm to about 35 nm, and about 20 nm to about 35 nm. (Item 63) 63. The optoelectronic device according to any one of items 60 to 62, wherein the second electrode thickness is in the range of at least one of about 5 nm to about 100 nm, about 5 nm to about 50 nm, about 5 nm to about 25 nm, about 5 nm to about 20 nm, about 5 nm to about 15 nm, about 8 nm to about 15 nm, about 8 nm to about 12 nm, and about 8 nm to about 10 nm. (Item 64) Item 64. The optoelectronic device of any one of items 52 to 63, wherein the at least one electrode coating comprises a metal coating and a conductive coating disposed on an exposed layer surface of the metal coating. (Item 65) Item 65. The optoelectronic device of item 64, wherein the conductive coating extends between the metal coating and the second CPL in the second light-emitting region. (Item 66) Item 66. The optoelectronic device of item 65, wherein the first CPL is disposed on an exposed layer surface of the metal coating in the first light-emitting region. (Item 67) Item 65. The optoelectronic device of item 64, wherein the conductive coating extends between the metal coating and the first CPL in the first light-emitting region. (Item 68) Item 68. An optoelectronic device according to any one of items 64 to 67, wherein the metal coating is made of a metal coating material. (Item 69) Item 69. The optoelectronic device of item 68, wherein the metal coating material comprises a metal having a bond dissociation energy in its diatomic molecules at 298 K of at least one of at least 10 kJ / mol, at least 50 kJ / mol, at least 100 kJ / mol, at least 150 kJ / mol, at least 180 kJ / mol, and at least 200 kJ / mol. (Item 70) 70. The optoelectronic device of claim 68 or 69, wherein the metal coating material comprises an element having an electronegativity less than at least one of about 1.4, about 1.3, and / or about 1.2. (Item 71) 71. The optoelectronic device of any one of items 68-70, wherein the metal coating material comprises an element selected from potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), tungsten (W), and any combination of any of these. (Item 72) Item 72. The device of item 71, wherein the elements are selected from Cu, Ag, Au, and any combination thereof. (Item 73) Item 72. The device of item 71, wherein the element is Cu. (Item 74) Item 72. The device of item 71, wherein the element is Al. (Item 75) Item 72. The device of item 71, wherein the elements are selected from Mg, Zn, Cd, Yb, and any combination thereof. (Item 76) Item 72. The device of item 71, wherein the elements are selected from Sn, Ni, Ti, Pd, Cr, Fe, Co, and any combination thereof. (Item 77) Item 72. The device of item 71, wherein the elements are selected from Zr, Pt, V, Nb, Ir, Os, and any combination thereof. (Item 78) Item 72. The device of item 71, wherein the elements are selected from Ta, Mo, W, and any combination thereof. (Item 79) Item 72. The device of item 71, wherein the elements are selected from Mg, Ag, Al, Yb, Li, and any combination thereof. (Item 80) Item 72. The device of item 71, wherein the elements are selected from Mg, Ag, Yb, and any combination thereof. (Item 81) Item 72. The device of item 71, wherein the elements are selected from Mg, Ag, and any combination thereof. (Item 82) Item 72. The device of item 71, wherein the element is Ag. (Item 83) 83. The device of any one of claims 68 to 82, wherein the metal coating material comprises a pure metal. (Item 84) Item 84. The device of item 83, wherein the pure metal is at least one of pure silver (Ag) and substantially pure Ag. (Item 85) Item 84. The device of item 83, wherein the pure metal is at least one of pure magnesium (Mg) and substantially pure Mg. (Item 86) Item 84. The device of item 83, wherein the pure metal is at least one of pure aluminum (Al) and substantially pure Al. (Item 87) 87. The device of any one of claims 69 to 86, wherein the metal coating material comprises an alloy. (Item 88) Item 88. The device of item 87, wherein the alloy is at least one of a silver (Ag)-containing alloy and a silver-magnesium (AgMg)-containing alloy. (Item 89) 89. The device of any one of items 68 to 88, wherein the metal coating material comprises oxygen (O). (Item 90) Item 90. The device of item 89, wherein the metal coating material comprises O and at least one metal. (Item 91) 91. The device of claim 89 or 90, wherein the metal coating material comprises a metal oxide. (Item 92) Item 92. The device of item 91, wherein the metal oxide comprises zinc (Z), indium (I), tin (Sn), antimony (Sb), gallium (Ga), and any combination of any of these. (Item 93) Item 94. The device of item 92, wherein the metal oxide is a transparent conductive oxide (TCO). Item 94. The device of item 93, wherein the TCO is at least one of indium titanium oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and any combination of any of these. (Item 95) Item 95. The device of any one of items 68 to 94, wherein the metal coating comprises multiple layers of the metal coating material. (Item 96) Item 96. The device of item 95, wherein the metal coating material of a first layer of the plurality of layers is different from the metal coating material of a second layer of the plurality of layers. (Item 97) Item 97. The device of item 95 or 96, wherein the metal coating material of at least one of the layers comprises ytterbium (Yb). (Item 98) Item 98. The device of item 97, wherein the metal coating material of another layer of the plurality of layers comprises at least one of a silver (Ag) containing alloy and a silver-magnesium (AgMg) containing alloy. (Item 99) Item 100. The device of item 98, wherein the metal coating material of another layer of the plurality of layers comprises at least one of pure silver (Ag), substantially pure Ag, pure magnesium (Mg), substantially pure Mg, and any combination of any of the foregoing. 99. The device of claim 98, wherein the metallic coating material of one of the layers proximal to the NIC comprises an element selected from silver (Ag), gold (Au), copper (Cu), aluminum (Al), tin (Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), tungsten (W), and any combination of any of the foregoing. (Item 101) Item 101. The device of item 100, wherein the elements include Cu, Ag, Au, and any combination thereof. (Item 102) Item 101. The device of item 100, wherein the element is Cu. (Item 103) Item 101. The device of item 100, wherein the element is Al. (Item 104) Item 101. The device of item 100, wherein the elements include Sn, Ti, Pd, Cr, Fe, Co, and any combination thereof. (Item 105) Item 101. The device of item 100, wherein the elements include Ni, Zr, Pt, V, Nb, Ir, Os, and any combination of any of these. (Item 106) Item 101. The device of item 100, wherein the elements include Ta, Mo, W, and any combination thereof. (Item 107) Item 101. The device of item 100, wherein the elements include Mg, Ag, Al, and any combination thereof. (Item 108) Item 101. The device of item 100, wherein the elements include Mg, Ag, and any combination thereof. (Item 109) Item 101. The device of item 100, wherein the element is Ag. (Item 110) 100. The device of any one of claims 95 to 109, wherein at least one of the layers comprises a metal having a work function less than about 4 eV. (Item 111) Item 111. The optoelectronic device according to any one of items 64 to 110, wherein the conductive coating is made of a conductive coating material. (Item 112) Item 112. The device of item 111, wherein the conductive coating material comprises a metal having a bond dissociation energy in its diatomic molecules at 298K of less than 300 kJ / mol, less than 200 kJ / mol, less than 165 kJ / mol, less than 150 kJ / mol, less than 100 kJ / mol, less than 50 kJ / mol, and less than 20 kJ / mol. (Item 113) The device according to item 111 or 112, wherein the conductive coating material comprises an element selected from potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), yttrium (Y), and any combination of any of these. (Item 114) Item 14. The device of item 113, wherein the elements are selected from K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, and any combination thereof. (Item 115) Item 114. The device of item 113, wherein the elements are selected from Cu, Ag, Au, and any combination thereof. (Item 116) Item 114. The device of item 113, wherein the element is Cu. (Item 117) Item 114. The device of item 113, wherein the element is Al. (Item 118) Item 114. The device of item 113, wherein the elements are selected from Mg, Zn, Cd, Yb, and any combination thereof. (Item 119) Item 14. The device of item 113, wherein the elements are selected from Mg, Ag, Al, Yb, Li, and any combination thereof. (Item 120) Item 114. The device of item 113, wherein the elements are selected from Mg, Ag, Yb, and any combination thereof. (Item 121) Item 14. The device of item 113, wherein the elements are selected from Mg, Ag, and any combination thereof. (Item 122) Item 114. The device of item 113, wherein the element is Ag. (Item 123) 123. The device of any one of claims 111 to 122, wherein the conductive coating material comprises a pure metal. (Item 124) Item 124. The device of item 123, wherein the pure metal is at least one of pure silver (Ag) and substantially pure Ag. (Item 125) Item 125. The device of item 124, wherein the substantially pure Ag has a purity of at least one of at least about 95%, at least about 98%, at least about 99%, at least about 99.9%, at least about 99.99%, at least about 99.999%, and at least about 99.9995%. (Item 126) Item 124. The device of item 123, wherein the pure metal is at least one of pure magnesium (Mg), and substantially pure Mg. (Item 127) Item 127. The device of item 126, wherein the substantially pure Mg has at least one of the following purities: at least about 95%, at least about 98%, at least about 99%, at least about 99.9%, at least about 99.99%, at least about 99.999%, and at least about 99.9995%. (Item 128) Item 128. The device of any one of items 111 to 127, wherein the conductive coating material comprises an alloy. (Item 129) Item 129. The device of item 128, wherein the alloy is at least one of a silver (Ag)-containing alloy, a magnesium (Mg)-containing alloy, and an AgMg-containing alloy. (Item 130) 130. The device of any one of claims 111 to 129, wherein the conductive coating material comprises a non-metallic element. (Item 131) Item 131. The device of item 130, wherein the non-metallic elements are selected from at least one of oxygen (O), sulfur (S), nitrogen (N), carbon (C), and any combination of any of the foregoing. (Item 132) Item 132. The device of item 130 or 131, wherein the concentration of the non-metallic element in the conductive coating material is less than at least one of about 1%, about 0.1%, about 0.01%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and about 0.0000001%. (Item 133) Item 133. The optoelectronic device of any one of items 52 to 132, further comprising a semiconductive layer, wherein the at least one electrode coating extends between the semiconductive layer and the first CPL in the first light-emitting region, and between the semiconductive layer and the second CPL in the second light-emitting region. (Item 134) Item 134. The optoelectronic device of item 133, wherein at least one of the first CPL and the second CPL comprises a nucleation inhibiting coating (NIC) for patterning the conductive coating. (Item 135) Item 135. The optoelectronic device of any one of items 52 to 134, wherein the second CPL is disposed within the first light-emitting region. (Item 136) Item 136. The optoelectronic device of item 135, wherein the first CPL extends between the at least one electrode coating and the second CPL in the first light-emitting region. (Item 137) Item 137. The optoelectronic device of item 135 or 136, wherein the second CPL extends between the at least one electrode coating and the first CPL in the first light-emitting region. (Item 138) Item 138. The optoelectronic device of any one of items 52 to 137, wherein the first CPL is disposed within the second light-emitting region. (Item 139) Item 139. The optoelectronic device of item 138, wherein the first CPL extends between the at least one electrode coating and the second CPL in the second light-emitting region. (Item 140) Item 140. The optoelectronic device of item 138 or 139, wherein the second CPL extends between the at least one electrode coating and the first CPL in the second light-emitting region. (Item 141) 141. The optoelectronic device of any one of the preceding claims, further comprising a third light-emitting region configured to emit photons having a third wavelength spectrum characterized by a third starting wavelength. (Item 142) Item 142. The optoelectronic device of item 141, wherein the third wavelength spectrum has a third peak wavelength that is shorter than a second peak wavelength of the second wavelength spectrum and longer than a first peak wavelength of the first wavelength spectrum. (Item 143) Item 145. The optoelectronic device according to item 143 or 144, wherein the first wavelength spectrum corresponds to a color that is B (blue), the second wavelength spectrum corresponds to a color that is G (green), and the third wavelength spectrum corresponds to a color that is R (red). (Item 144) Item 145. The optoelectronic device of any one of items 135 to 143, wherein at least one of the first CPL and the second CPL is disposed in the third light-emitting region. Item 145. The optoelectronic device of any one of items 135 to 144, wherein a third CPL is disposed within the third light-emitting region. (Item 146) Item 146. The optoelectronic device of item 145, wherein at least one of the third CPL and the third CPL material (CPL(m)3) exhibits a third absorption edge at a third absorption edge wavelength that is shorter than the third onset wavelength. (Item 147) Item 147. The optoelectronic device of item 146, wherein the third absorption edge is characterized by a third absorption wavelength at which the extinction coefficient of the CPL(m)3 is equal to a threshold value. (Item 148) Item 148. The optoelectronic device of item 146 or 147, wherein the third onset wavelength is longer than the third absorption edge wavelength by less than at least one of about 200 nm, about 150 nm, about 130 nm, about 100 nm, about 80 nm, about 70 nm, about 60 nm, about 50 nm, about 40 nm, about 35 nm, about 25 nm, about 20 nm, about 15 nm, and about 10 nm. (Item 149) Item 149. The optoelectronic device of item 147 or 148, wherein the third extinction wavelength is the longest wavelength of at least one wavelength at which the extinction coefficient of the CPL(m)3 is equal to the threshold value. (Item 150) 150. The optoelectronic device of any one of items 147 to 149, wherein the first derivative of the extinction coefficient of the CPL(m)3 as a function of wavelength is negative at the third extinction wavelength. (Item 151) 151. The optoelectronic device of any one of items 147 to 150, wherein the extinction coefficient of the CPL(m)3 at a wavelength longer than the third absorption wavelength is less than the threshold value. (Item 152) Item 153. The optoelectronic device according to any one of items 147 to 151, wherein the extinction coefficient of the CPL(m)3 at all wavelengths longer than the third absorption wavelength is less than the threshold value. 153. The optoelectronic device of any one of items 147-152, wherein the extinction coefficient of the CPL(m)3 at any wavelength longer than the third start wavelength is less than at least one of about 0.1, about 0.09, about 0.08, about 0.06, about 0.05, about 0.03, about 0.01, about 0.005, and about 0.0001. (Item 154) 154. The optoelectronic device of any one of items 146 to 153, wherein the extinction coefficient of the CPL(m)3 at a wavelength shorter than the first absorption edge wavelength is greater than at least one of about 0.1, about 0.12, about 0.13, about 0.15, about 0.18, about 0.2, about 0.25, about 0.3, about 0.5, about 0.7, about 0.75, about 0.8, about 0.9, and about 1.0. (Item 155) Item 155. The optoelectronic device according to any one of items 146 to 154, wherein the refractive index of the CPL(m)3 for at least one wavelength longer than the third absorption edge wavelength exceeds the refractive index of the CPL(m)3 for at least one wavelength shorter than the first absorption edge wavelength. (Item 156) 156. The optoelectronic device of any one of items 146 to 155, wherein the refractive index of the CPL(m)3 at at least one wavelength in the third wavelength spectrum is greater than at least one of about 1.8, about 1.9, about 1.95, about 2, about 2.05, about 2.1, about 2.2, about 2.3, and about 2.5. (Item 157) Item 157. The optoelectronic device of any one of items 141 to 156, wherein the third light-emitting region is substantially free of at least one of the first CPL and the second CPL. [Brief description of the drawings]

[0057] Examples of the present disclosure will now be described by reference to the following figures, in which identical reference numbers in different figures indicate identical elements and / or, in some non-limiting examples, similar and / or corresponding elements.

[0058] [Figure 1] 1 is a cross-sectional side block diagram of an example electroluminescent device according to an example of the present disclosure. [Diagram 2] 2 is a cross-sectional view of an example backplane layer of the substrate of the device of FIG. 1 showing thin film transistors (TFTs) embodied in the backplane layer. [Diagram 3] 3 is a circuit diagram of an example of circuitry such as may be provided by one or more of the TFTs shown in the backplane layer of FIG. 2. [Figure 4] FIG. 2 is a cross-sectional view of the device of FIG. 1. [Diagram 5] 2 is a cross-sectional view of an example version of the device of FIG. 1 showing an example of at least one pixel defining layer (PDL) that supports deposition of at least one second electrode of the device. [Figure 6] 1 is an example of an energy profile showing the relative energy states of adatoms adsorbed on a surface, according to an example of the present disclosure. [Figure 7] 2 is a schematic diagram illustrating an example process for depositing a selective coating in a pattern onto an exposed layer surface of a base material of an example version of the device of FIG. 1 according to an example of the present disclosure. [Figure 8] FIG. 8 is a schematic diagram illustrating an example of a process for depositing a conductive coating in a first pattern on an exposed layer surface including the selective coating deposition pattern of FIG. 7, where the selective coating is a nucleation inhibiting coating (NIC). [Figure 9A] 8 is a schematic diagram illustrating an example of an open mask suitable for use with the process of FIG. 7 having an aperture in the open mask, according to an example of the present disclosure. [Figure 9B]8 is a schematic diagram illustrating an example of an open mask suitable for use with the process of FIG. 7 having an aperture in the open mask, according to an example of the present disclosure. [Figure 9C] 8 is a schematic diagram illustrating an example of an open mask suitable for use with the process of FIG. 7 having an aperture in the open mask, according to an example of the present disclosure. [Figure 9D] 8 is a schematic diagram illustrating an example of an open mask suitable for use with the process of FIG. 7 having an aperture in the open mask, according to an example of the present disclosure. [Figure 10A] 2 is an example of a version of the device of FIG. 1 with an example of an additional deposition step, according to an example of the present disclosure. [Figure 10B] 10B is an example of a version of the device of FIG. 10A, in which the first portion includes a discontinuous coating. [Figure 10C] FIG. 10C is a plan view of a first portion of the device of FIG. 10B. [Figure 10D] 10B is an example of a version of the device of FIG. 10A further including a third portion. [Figure 10E] FIG. 10E is a plan view of a portion of the device of FIG. 10D. [Figure 11A] 10 is a schematic diagram illustrating an example of a process for depositing a selective coating that is a nucleation promoting coating (NPC) in a pattern on an exposed layer surface including the selective coating deposition pattern of FIG. 9. [Figure 11B] 11B is a schematic diagram showing an example of a process for depositing a conductive coating in a pattern on an exposed layer surface including the deposited pattern of the NPC of FIG. 11A. [Figure 12A] 2 is a schematic diagram showing an example process for depositing NPCs in a pattern onto an exposed layer surface of a base material of an example version of the device of FIG. 1 according to an example of the present disclosure. [Figure 12B] FIG. 12B is a schematic diagram showing an example of a process for depositing NIC in a pattern onto an exposed layer surface containing the deposition pattern of NPC of FIG. 12A. [Figure 12C]FIG. 12C is a schematic diagram illustrating an example of a process for depositing a conductive coating in a pattern on an exposed layer surface including the deposited pattern of NIC of FIG. 12B. [Figure 13] 2A-2C are schematic diagrams illustrating example stages of an example printing process for depositing a selective coating in a pattern onto an exposed layer surface in an example version of the device of FIG. 1 according to an example of the present disclosure. [Figure 14] 2 is a schematic diagram illustrating, in plan view, an example of a patterned electrode suitable for use in a version of the device of FIG. 1, according to an example of the present disclosure. [Figure 15] FIG. 15 is a schematic diagram illustrating an example of a cross-sectional view of the device of FIG. 14 taken along line 15-15. [Figure 16A] 2A-2C are schematic diagrams illustrating, in plan view, several example patterns of electrodes suitable for use in an example version of the device of FIG. 1, according to an example of the present disclosure. [Figure 16B] 16B is a schematic diagram illustrating an example of a cross-sectional view of the device of FIG. 16A at an intermediate stage taken along line 16B-16B. [Figure 16C] FIG. 16C is a schematic diagram illustrating an example of a cross-sectional view of the device of FIG. 16A taken along line 16C-16C. [Figure 17] FIG. 2 is a schematic diagram showing a cross-sectional view of an example version of the device of FIG. 1 having an example patterned auxiliary electrode, according to an example of the present disclosure. [Figure 18A] 2 is a schematic diagram illustrating, in plan view, example arrangements of emissive and / or non-emissive regions in example versions of the device of FIG. 1, according to examples of the present disclosure. [Figure 18B] 18B is a schematic diagram illustrating segments of a portion of FIG. 18A, each showing an example of an auxiliary electrode overlapping a non-emissive region, according to an example of the present disclosure. [Figure 18C] 18B is a schematic diagram illustrating segments of a portion of FIG. 18A, each showing an example of an auxiliary electrode overlapping a non-emissive region, according to an example of the present disclosure. [Figure 18D] 18B is a schematic diagram illustrating segments of a portion of FIG. 18A, each showing an example of an auxiliary electrode overlapping a non-emissive region, according to an example of the present disclosure. [Figure 19]1A-1C are schematic diagrams illustrating, in plan view, example patterns of auxiliary electrodes overlapping at least one emissive region and at least one non-emissive region, according to examples of the present disclosure. [Figure 20A] 2 is a schematic diagram illustrating, in plan view, an example pattern for an example version of the device of FIG. 1 having multiple groups of diamond-configured light-emitting regions, according to an example of the present disclosure. [Figure 20B] FIG. 20B is a schematic diagram illustrating an example of a cross-sectional view of the device of FIG. 20A taken along line 20B-20B. [Figure 20C] FIG. 20C is a schematic diagram illustrating an example of a cross-sectional view of the device of FIG. 20A taken along line 20C-20C. [Figure 21] 5 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 4 having an example additional deposition step, according to an example of the present disclosure. [Figure 22] 5 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 4 having an example additional deposition step, according to an example of the present disclosure. [Diagram 23] 5 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 4 having an example additional deposition step, according to an example of the present disclosure. [Figure 24] 5 is a schematic diagram showing an example cross-sectional view of an example version of the device of FIG. 4 having an example additional deposition step, according to an example of the present disclosure. [Diagram 25] 2 is a schematic diagram showing example stages of an example process for depositing a conductive coating in a pattern on an exposed layer surface of an example version of the device of FIG. 1 by selective deposition and subsequent removal process according to an example of the present disclosure. [Figure 26A] FIG. 2 is a schematic diagram illustrating, in plan view, an example of a transparent version of the device of FIG. 1 including at least one example pixel region having at least one auxiliary electrode, and at least one example light-transmitting region, according to an example of the present disclosure. [Figure 26B] FIG. 26B is a schematic diagram illustrating an example of a cross-sectional view of the device of FIG. 26A taken along line 26B-26B. [Figure 27A]2 is a schematic diagram illustrating, in plan view, an example of a transparent version of the device of FIG. 1 including at least one example pixel region and at least one example light-transmissive region, according to an example of the present disclosure. [Figure 27B] FIG. 27B is a schematic diagram illustrating an example of a cross-sectional view of the device of FIG. 27A taken along line 27B-27B. [Figure 27C] FIG. 27B is a schematic diagram illustrating another example of a cross-sectional view of the device of FIG. 27A taken along line 27B-27B. [Figure 28A] FIG. 2 is a schematic diagram showing example stages of an example process for manufacturing an example version of the device of FIG. 1 to provide two light-emitting regions, each having a second electrode of a different thickness, according to an example of the present disclosure. [Figure 28B] FIG. 2 is a schematic diagram showing example stages of an example process for manufacturing an example version of the device of FIG. 1 to provide two light-emitting regions, each having a second electrode of a different thickness, according to an example of the present disclosure. [Figure 28C] FIG. 2 is a schematic diagram showing example stages of an example process for manufacturing an example version of the device of FIG. 1 to provide two light-emitting regions, each having a second electrode of a different thickness, according to an example of the present disclosure. [Figure 28D] FIG. 2 is a schematic diagram showing example stages of an example process for manufacturing an example version of the device of FIG. 1 to provide two light-emitting regions, each having a second electrode of a different thickness, according to an example of the present disclosure. [Figure 29A] 2A-2C are schematic diagrams illustrating example stages of an example process for manufacturing an example version of the device of FIG. 1 having subpixel regions with second electrodes of different thicknesses, according to examples of the present disclosure. [Figure 29B] 2A-2C are schematic diagrams illustrating example stages of an example process for manufacturing an example version of the device of FIG. 1 having subpixel regions with second electrodes of different thicknesses, according to examples of the present disclosure. [Figure 29C] 2A-2C are schematic diagrams illustrating example stages of an example process for manufacturing an example version of the device of FIG. 1 having subpixel regions with second electrodes of different thicknesses, according to examples of the present disclosure. [Figure 29D] 2A-2C are schematic diagrams illustrating example stages of an example process for manufacturing an example version of the device of FIG. 1 having subpixel regions with second electrodes of different thicknesses, according to examples of the present disclosure. [Diagram 30] 2 is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 1 in which the second electrode is coupled to an auxiliary electrode, according to an example of the present disclosure. [Figure 31A] 2A-2C are schematic diagrams illustrating various potential behaviors of a NIC at a deposition interface with a conductive coating of an example version of the device of FIG. 1 according to various examples of the present disclosure. [Figure 31B] 2A-2C are schematic diagrams illustrating various potential behaviors of a NIC at a deposition interface with a conductive coating of an example version of the device of FIG. 1 according to various examples of the present disclosure. [Figure 31C] 2A-2C are schematic diagrams illustrating various potential behaviors of a NIC at a deposition interface with a conductive coating of an example version of the device of FIG. 1 according to various examples of the present disclosure. [Figure 31D] 2A-2C are schematic diagrams illustrating various potential behaviors of a NIC at a deposition interface with a conductive coating of an example version of the device of FIG. 1 according to various examples of the present disclosure. [Figure 31E] 2A-2C are schematic diagrams illustrating various potential behaviors of a NIC at a deposition interface with a conductive coating of an example version of the device of FIG. 1 according to various examples of the present disclosure. [Fig. 31F] 2A-2C are schematic diagrams illustrating various potential behaviors of a NIC at a deposition interface with a conductive coating of an example version of the device of FIG. 1 according to various examples of the present disclosure. [Figure 31G] 2A-2C are schematic diagrams illustrating various potential behaviors of a NIC at a deposition interface with a conductive coating of an example version of the device of FIG. 1 according to various examples of the present disclosure. [Fig. 31H] 2A-2C are schematic diagrams illustrating various potential behaviors of a NIC at a deposition interface with a conductive coating of an example version of the device of FIG. 1 according to various examples of the present disclosure. [Fig. 31I]2A-2C are schematic diagrams illustrating various potential behaviors of a NIC at a deposition interface with a conductive coating of an example version of the device of FIG. 1 according to various examples of the present disclosure. [Diagram 32] FIG. 1 is a schematic diagram illustrating in qualitative form the relationship between example emission spectra for a pair of example light-emitting regions and example plots of the refractive index of respective capping layers covering the light-emitting regions, according to various examples of the present disclosure. [Diagram 33] 33 is a schematic diagram illustrating in qualitative form the relationship between example plots of refractive index of FIG. 32 and respective plots of example extinction coefficients of respective capping layers of FIG. 32 in accordance with various examples of the present disclosure. [Diagram 34] 34 is a schematic diagram illustrating in qualitative form the relationship between the example emission spectra of FIG. 32 and respective plots of example extinction coefficients of FIG. 33, according to various examples of the present disclosure. [Diagram 35] 1 is a schematic diagram showing a metallic and / or conductive coating underlying a NIC according to an example of the present disclosure. [Figure 36A] 28A-28B , which are schematic diagrams showing example stages of an example process for manufacturing an example version of the device of FIG. 1 following the stages of FIGS. 28A-28B . [Figure 36B] 28A-28B , which are schematic diagrams showing example stages of an example process for manufacturing an example version of the device of FIG. 1 following the stages of FIGS. 28A-28B . [Figure 37A] FIG. 2 is a schematic diagram showing example stages of an example process for manufacturing an example version of the device of FIG. 1 to provide three light-emitting regions, each having a second electrode of a different thickness, according to an example of the present disclosure. [Figure 37B] FIG. 2 is a schematic diagram showing example stages of an example process for manufacturing an example version of the device of FIG. 1 to provide three light-emitting regions, each having a second electrode of a different thickness, according to an example of the present disclosure. [Figure 37C] FIG. 2 is a schematic diagram showing example stages of an example process for manufacturing an example version of the device of FIG. 1 to provide three light-emitting regions, each having a second electrode of a different thickness, according to an example of the present disclosure. [Figure 37D]FIG. 2 is a schematic diagram showing example stages of an example process for manufacturing an example version of the device of FIG. 1 to provide three light-emitting regions, each having a second electrode of a different thickness, according to an example of the present disclosure. [Figure 37E] FIG. 2 is a schematic diagram showing example stages of an example process for manufacturing an example version of the device of FIG. 1 to provide three light-emitting regions, each having a second electrode of a different thickness, according to an example of the present disclosure. [Figure 38A] 2A-2C are schematic diagrams illustrating example stages of an example process for manufacturing an example version of the device of FIG. 1 having subpixel regions with second electrodes of different thicknesses, according to examples of the present disclosure. [Figure 38B] 2A-2C are schematic diagrams illustrating example stages of an example process for manufacturing an example version of the device of FIG. 1 having subpixel regions with second electrodes of different thicknesses, according to examples of the present disclosure. [Figure 38C] 2A-2C are schematic diagrams illustrating example stages of an example process for manufacturing an example version of the device of FIG. 1 having subpixel regions with second electrodes of different thicknesses, according to examples of the present disclosure. [Figure 38D] 2A-2C are schematic diagrams illustrating example stages of an example process for manufacturing an example version of the device of FIG. 1 having subpixel regions with second electrodes of different thicknesses, according to examples of the present disclosure. [Figure 38E] 2A-2C are schematic diagrams illustrating example stages of an example process for manufacturing an example version of the device of FIG. 1 having subpixel regions with second electrodes of different thicknesses, according to examples of the present disclosure. [Figure 38F] 2A-2C are schematic diagrams illustrating example stages of an example process for manufacturing an example version of the device of FIG. 1 having subpixel regions with second electrodes of different thicknesses, according to examples of the present disclosure. [Figure 39A] 2 is a schematic diagram illustrating an example of a version of the device of FIG. 1 according to an example of the present disclosure. [Figure 39B] 2 is a schematic diagram illustrating an example of a version of the device of FIG. 1 according to an example of the present disclosure. [Figure 39C]2 is a schematic diagram illustrating an example of a version of the device of FIG. 1 according to an example of the present disclosure. [Diagram 40] FIG. 1 is a schematic diagram showing the formation of a membrane nucleus, according to an example of the present disclosure.

[0059] In this disclosure, for purposes of explanation and not limitation, specific details have been described to provide a thorough understanding of the disclosure, including but not limited to particular architectures, interfaces, and / or techniques. In some instances, detailed descriptions of well-known systems, techniques, components, devices, circuits, methods, and applications have been omitted so as not to obscure the description of the disclosure with unnecessary detail.

[0060] It is further understood that the block diagrams reproduced herein may represent conceptual views of illustrative components embodying principles of the technology.

[0061] Thus, the components of the systems and methods have been suitably represented by conventional symbols in the drawings, and only those specific details relevant to understanding the examples of this disclosure are shown, so as not to obscure the disclosure with details that will be readily apparent to those skilled in the art having the benefit of the description herein.

[0062] Any drawings provided herein are not drawn to scale and are not to be considered as limiting the present disclosure in any way.

[0063] Any features or acts shown in dashed outline may be considered optional in some instances. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0064] Optoelectronic Devices FIELD OF THE DISCLOSURE This disclosure relates generally to electronic devices, and more specifically to optoelectronic devices. Optoelectronic devices generally encompass any device that converts electrical signals into photons and vice versa.

[0065] In this disclosure, the terms "photon" and "light" may be used interchangeably to refer to similar concepts. In this disclosure, photons may have wavelengths that lie in the visible light spectrum, in the infrared (IR) and / or ultraviolet (UV) regions thereof.

[0066] In this disclosure, the term "visible light spectrum" as used herein generally refers to at least one wavelength in the visible portion of the electromagnetic spectrum. In some non-limiting examples, the visible light spectrum can correspond to a wavelength range from about 380 nm to about 750 nm.

[0067] In this disclosure, the term "emission spectrum" (ES), as used herein and shown as a non-limiting example in Figure 32 as a plot of intensity (I) as a function of wavelength (λ), generally refers to the electroluminescence spectrum of light emitted by an optoelectronic device. By way of non-limiting example, the emission spectrum (ES) may be detected using an optical instrument such as a spectrophotometer that measures the intensity (I) of electromagnetic radiation over a range of wavelengths.

[0068] In this disclosure, the "start wavelength" λ is used herein and is shown as a non-limiting example in FIG. onset The term generally refers to the shortest wavelength at which emission is detected within an emission spectrum.

[0069] In this disclosure, the "peak wavelength" λ is used herein and is shown as a non-limiting example in FIG. max The term generally refers to the wavelength within the emission spectrum at which maximum luminance is found. Those skilled in the art will understand that luminance is measured in units of candela (cd), a measure of luminous intensity per square area, and cd / m 2 It will be appreciated that the emission spectrum may be measured in units of 100 nm or nits. In some non-limiting examples of optoelectronic devices whose emission spectrum varies with viewing angle (i.e., the angle at which the emission spectrum is measured), the emission spectrum taken at an angle perpendicular to the plane of the device may have a maximum luminance and / or a peak wavelength, λ maxThe optical signal can be used to determine various characteristics of the emitted light, including, but not limited to,

[0070] In general, the starting wavelength λ onset is the peak wavelength λ max In some non-limiting examples, the onset wavelength λ onset is generally calculated as the intensity at which the luminance exceeds a threshold intensity (I onset ), which in some non-limiting examples may correspond to a wavelength in the emission spectrum at a peak wavelength λ max The brightness may be about 10%, about 5%, about 3%, about 1%, about 0.5%, about 0.1%, or about 0.01% of the brightness at

[0071] In general, electroluminescent devices are configured to emit and / or transmit light having wavelengths in the range of about 425 nm to about 725 nm, and more specifically, in some non-limiting examples, light having peak emission wavelengths of 456 nm, 528 nm, and 624 nm, corresponding to the B (blue) 2543, G (green) 2542, and R (red) 2541 subpixels, respectively. Thus, in the context of such electroluminescent devices, the emission spectrum can refer to any wavelength or range of wavelengths from about 425 nm to about 725 nm, or from about 456 nm to about 624 nm. Photons having wavelengths in the visible light spectrum can also be referred to herein as "visible light," in some non-limiting examples.

[0072] In some non-limiting examples, the emission spectrum located in the R (red) portion of the visible light spectrum has a peak wavelength λ that can be located in the wavelength range of 600 nm to about 640 nm. max and in a non-limiting example, may be substantially about 620 nm. onset can be located in the wavelength range of about 500 nm to about 610 nm, about 575 nm to about 600 nm, about 570 nm to about 580 nm, or about 580 nm to about 590 nm.

[0073] In some non-limiting examples, the emission spectrum located in the G (green) portion of the visible light spectrum has a peak wavelength λ that can be located in the wavelength range of 510 nm to about 540 nm. max and in a non-limiting example, may be substantially about 530 nm. onset can be located in the wavelength range of about 470 nm to about 520 nm, about 480 nm to about 510 nm, about 480 nm to about 490 nm, or about 490 to about 500 nm.

[0074] In some non-limiting examples, the emission spectrum located in the B (blue) portion of the visible light spectrum has a peak wavelength λ that can be located in the wavelength range of 450 nm to about 460 nm. max and in a non-limiting example, may be substantially about 455 nm. onset can be located in the wavelength range of about 420 nm to about 450 nm, about 425 nm to about 440 nm, about 420 nm to about 430 nm, or about 430 nm to about 440 nm.

[0075] In this disclosure, the term "IR signal" as used herein generally refers to EM radiation having wavelengths in the IR portion of the EM spectrum. IR signals may have wavelengths that correspond to the near infrared (NIR) subset thereof, in some non-limiting examples. As non-limiting examples, NIR signals may have wavelengths from about 750 nm to about 1400 nm, from about 750 nm to about 1300 nm, from about 800 nm to about 1300 nm, from about 800 nm to about 1200 nm, from about 850 nm to about 1100 nm, and / or from about 900 nm to about 1000 nm.

[0076] In this disclosure, the term "absorption spectrum" as used herein generally refers to the wavelength (sub)range of the EM spectrum where absorption occurs.

[0077] In this disclosure, the term "extinction coefficient" (k), as used herein and generally shown as a non-limiting example in Figure 33, refers to the degree to which an electromagnetic coefficient is attenuated when propagating through a material. In some non-limiting examples, the extinction coefficient may be understood to correspond to the imaginary component k of the complex refractive index N. In some non-limiting examples, the extinction coefficient of a material may be measured by various methods, including, but not limited to, by ellipsometry.

[0078] In this disclosure, the terms "refractive index" (n) and / or "index" as used herein to describe a medium and generally shown as a non-limiting example in Figure 32 refer to a value calculated from the ratio of the speed of light in such a medium to the speed of light in a vacuum. In this disclosure, particularly when used to describe the properties of substantially transparent materials, including but not limited to thin film layers and / or coatings, these terms may correspond to the real part n in the formula N=n+ik, where N represents the complex refractive index and k represents the extinction coefficient.

[0079] As will be appreciated by those skilled in the art, substantially transparent materials, including but not limited to thin film layers and / or coatings, generally exhibit relatively low k values ​​in the visible light spectrum, and therefore the imaginary component of the equation may contribute little to the complex refractive index N. On the other hand, for example, a light-transmitting electrode formed by a metal thin film may exhibit a relatively low n value and a relatively high k value in the visible light spectrum. Thus, the complex refractive index N of such a thin film may be dominated primarily by its imaginary component.

[0080] In this disclosure, unless the context dictates otherwise, an unspecific reference to a refractive index is intended to be a reference to the real part n of the complex refractive index N.

[0081] In the present disclosure, the terms "absorption edge" (AE), "absorption discontinuity", and / or "absorption limit", as used herein and shown as a non-limiting example in FIG. 33, generally refer to a rapid decrease in the extinction coefficient k and / or absorption spectrum of a coating, layer, and / or material. In the present disclosure, the "absorption edge", as described, for example, in relation to capping layer (CPL) 3610, refers to the longest wavelength, e.g., in the visible spectrum, where a rapid decrease in the extinction coefficient k of CPL 3610 is observed. In some non-limiting examples, the extinction coefficient k of CPL 3610, particularly in the visible spectrum, may decrease toward zero and remain low over the remainder of the visible spectrum. In such non-limiting examples, the absorption edge of CPL 3610 generally decreases toward zero, as shown as a non-limiting example in FIG. 33, such that the extinction coefficient k is at a threshold T AE In some non-limiting examples, the absorption edge of CPL3610 may correspond to a threshold T having the first derivative of the extinction coefficient k as a function of wavelength λ where k is negative. AE may correspond to the wavelength or the longest wavelength passing through.

[0082] In some non-limiting examples, there may be a generally positive correlation between the refractive index n and the transmittance, or in other words, a generally negative correlation between the refractive index n and the absorption at or near the absorption edge. In some non-limiting examples, the absorption edge of a material may correspond to the wavelength at which the extinction coefficient k approaches a threshold value close to zero.

[0083] An organic optoelectronic device can include any optoelectronic device in which one or more active layers and / or layers of the device are formed primarily from organic (carbon-containing) materials, and more specifically, organic conductive materials.

[0084] In the present disclosure, one skilled in the art will understand that organic materials may include, but are not limited to, a wide variety of organic molecules and / or organic polymers. Furthermore, one skilled in the art will understand that organic materials doped with various inorganic substances, including but not limited to elements and / or inorganic compounds, may still be considered organic materials. Still, one skilled in the art will further understand that various organic materials may be used, and the processes described herein are generally applicable to the full range of such organic materials. Still further, one skilled in the art will understand that organic materials containing metals and / or other inorganic elements may still be considered organic materials. Still further, one skilled in the art will understand that various organic materials may be molecules, oligomers, and / or polymers.

[0085] In the present disclosure, inorganic matter may refer to a material that comprises primarily inorganic materials. In the present disclosure, inorganic matter may include any material that is not considered to be an organic material, including, but not limited to, metals, glasses, and / or minerals.

[0086] If the optoelectronic device emits photons through a luminescent process, the device can be considered an electroluminescent device. In some non-limiting examples, the electroluminescent device can be an organic light-emitting diode (OLED) device. In some non-limiting examples, the electroluminescent device can be part of an electronic device. As a non-limiting example, the electroluminescent device can be an OLED lighting panel or module, and / or an OLED display or module of some other electronic device, such as a smartphone, tablet, laptop, e-reader, and / or a monitor and / or a television (collectively, "user device").

[0087] In some non-limiting examples, the optoelectronic device can be an organic photovoltaic (OPV) device that converts photons into electricity. In some non-limiting examples, the optoelectronic device can be an electroluminescent quantum dot device. In this disclosure, unless otherwise stated, reference is made specifically to OLED devices, with the understanding that in some examples, such disclosure can be equally applicable to other optoelectronic devices, including but not limited to OPV and / or quantum dot devices, in a manner apparent to one of ordinary skill in the art.

[0088] The structure of such devices is illustrated from each of two sides: a cross-sectional side and / or a lateral (plan view) side.

[0089] In this disclosure, the terms "layer" and "layer portion" may be used interchangeably to refer to similar concepts.

[0090] In the context of introducing the cross-sectional side views below, components of such devices are shown with substantially planar lateral laminations. Those skilled in the art will understand that such substantially planar representations are for illustrative purposes only and are across the lateral extent of such devices, and that in some non-limiting examples there may be localized substantially planar laminations of different thicknesses and dimensions, including substantially complete absence of layers, and / or layers separated by non-planar transition regions (including lateral gaps and discontinuities). Thus, for illustrative purposes, the device is shown below in its cross-sectional side as a substantially laminar structure, although in the plan view embodiments discussed below, such devices may exhibit a variety of topographies for defining features, each of which may substantially exhibit the laminar profile described in the cross-sectional side view.

[0091] cross section side 1 is a simplified block diagram from a cross-sectional side of an example electroluminescent device according to the present disclosure. The electroluminescent device, generally designated 100, includes multiple layers, including but not limited to a substrate 110, on which is disposed a front plane 10, each of which includes multiple layers, a first electrode 120, at least one semiconductive layer 130, and a second electrode 140. In some non-limiting examples, the front plane 10 may provide a mechanism for photon emission and / or manipulation of emitted photons. In some non-limiting examples, a barrier coating 1650 (FIG. 16C) may be provided to surround and / or encapsulate the layers 120, 130, 140, and / or the substrate 110 disposed thereon.

[0092] For illustrative purposes, the exposed layer surface of the base material is referred to as 111. In Figure 1, exposed layer surface 111 is shown as being of second electrode 140. Those skilled in the art will appreciate that, as a non-limiting example, upon deposition of first electrode 120, exposed layer surface 111 is shown as 111a of substrate 110.

[0093] Those skilled in the art will understand that when a component, layer, region, and / or portion thereof is referred to as being "formed," "disposed," and / or "deposited" on and / or over another base material, component, layer, region, and / or portion, such forming, disposing, and / or depositing may be directly on the exposed layer surface 111 of such base material, component, layer, region, and / or portion (at the time of such forming, disposing, and / or depositing), and / or indirectly with materials, components, layers, regions, and / or portions therebetween.

[0094] In this disclosure, in accordance with orientation conventions, substrate 110 is considered to be the "bottom surface" of device 100, extending substantially perpendicular to the above-mentioned lateral sides on which layers 120, 130, 140 are disposed on the "top surface" of substrate 11. In accordance with such conventions, second electrode 140 is on the top surface of device 100 as shown, even if substrate 110 is physically inverted such that the top surface on which one of layers 120, 130, 140, such as but not limited to first electrode 120, is to be disposed is physically below substrate 110 to allow deposition material (not shown) to migrate upward and deposit as a thin film on its top surface (as may be the case in some instances, including but not limited to, during a manufacturing process, where one or more layers 120, 130, 140 may be introduced by a deposition process).

[0095] In some non-limiting examples, device 100 can be electrically coupled to a power source 15. When so coupled, device 100 can emit photons as described herein.

[0096] In some non-limiting examples, the device 100 can be classified according to the emission direction of photons generated therefrom. In some non-limiting examples, the device 100 can be considered to be a bottom-emitting device if the generated photons are emitted in a direction toward and through the substrate 100 on the bottom surface of the device 100 and away from the layers 120, 130, 140 disposed on the top surface of the substrate 110. In some non-limiting examples, the device 100 can be considered to be a top-emitting device if the photons are emitted in a direction away from the substrate 110 on the bottom surface of the device 100 and toward and / or through the top layer 140 disposed on the top surface of the substrate 110 with the intermediate layers 120, 130. In some non-limiting examples, the device 100 can be considered to be a dual-sided emitting device if it is configured to emit photons on both the bottom surface (toward and through the substrate 110) and the top surface (toward and through the top layer 140).

[0097] Thin film formation The front plane 10 layers 120, 130, 140 can be sequentially disposed on a target exposed layer surface 111 (and / or in some non-limiting examples, including but not limited to at least one target area and / or portion of such surface in the case of selective deposition as disclosed herein) of a base material, which in some non-limiting examples can sometimes be a substrate 110 and an intervening underlayer 120, 130, 140 as a thin film. In some non-limiting examples, the electrodes 120, 140, 1750, 4150 can be formed from at least one thin film conductive layer of a conductive coating 830 (FIG. 8). Those skilled in the art will appreciate that such a conductive coating 830 can be (at least) one of multiple layers of the device 100. The conductive coating 830 can be composed of a conductive coating material 831. Those skilled in the art will appreciate that conductive coating 830 and the conductive coating material 831 that constitutes it may exhibit substantially similar optical and / or other properties, particularly when disposed as a film and under substantially similar conditions and / or by substantially similar mechanisms as those employed in depositing conductive coating 830.

[0098] The thicknesses of each layer, including but not limited to layers 120, 130, 140, and substrate 110 shown in FIG. 1 and throughout the figures are exemplary only and do not necessarily represent a thickness relative to the other layers 120, 130, 140 (and / or substrate 110).

[0099] In this disclosure, for purposes of simplicity of exposition, the terms "coating film," "closed coating," and / or "closed film" 4530 as used herein, in some non-limiting examples, refer to a thin film structure and / or coating of the conductive coating material 831 used for the conductive coating 830, whereby relevant portions of a surface are substantially coated thereby, such that such surface is not substantially exposed by or through the coating film 4530 deposited thereon.

[0100] In this disclosure, unless the context dictates otherwise, non-specific reference to a thin film is intended to be a reference to a substantially closed film 4530.

[0101] In some non-limiting examples, the closed film 4530 of the conductive coating material 831 can be disposed to cover a portion of the base surface such that within such portion, less than about 20%, less than about 15%, less than about 10%, less than about 5%, less than about 3%, or less than about 1% of the interior base surface is exposed by or through the closed film 4530.

[0102] Those skilled in the art will appreciate that the closed film 4530 may be patterned using a variety of techniques and processes, including, but not limited to, those described herein, to intentionally leave portions of the exposed layer surface 111 of the base surface exposed to be exposed following deposition of the closed film 4530. In the present disclosure, such patterned films may nevertheless be considered to constitute a closed film 4530 within the context of such patterning, as well as when, by way of non-limiting example, thin films and / or coatings deposited between the intentionally exposed portions of such exposed layer surface 111 of the base surface themselves comprise a substantially closed film 4530.

[0103] Those skilled in the art will appreciate that due to inherent variability in the deposition process and, in some non-limiting examples, the presence of impurities in either or both of the deposited material, in some non-limiting examples, the conductive coating material 831, and the exposed layer surface 111 of the base material, deposition of thin films using various techniques and processes, including, but not limited to, those described herein, may nevertheless result in the formation of small apertures therein, including, but not limited to, pinholes, tears, and / or cracks. In the present disclosure, such thin films may nevertheless be considered to constitute closed films 4530 if, by way of non-limiting example, the deposited thin film and / or coating comprises a substantially closed film 4530 and meets the coverage criteria set out above despite the presence of such apertures.

[0104] By continued vapor deposition of monomers (which in some non-limiting examples may be molecules and / or atoms of the deposition material in vapor form), a substantially closed film 4530 may eventually be deposited on the exposed layer surface 111 of the base material. The behavior of such a closed film 4530, including the optical effects caused thereby, is generally relatively constant, which is not surprising.

[0105] In some non-limiting examples, the behavior of a thin film, including at least one closed film 4530, including its optical effects, is generally relatively uniform.

[0106] Although this disclosure describes thin film formation with reference to at least one layer or coating in terms of vapor deposition, those skilled in the art will understand that in some non-limiting examples, various components of electroluminescent device 100 may be selectively deposited using a wide variety of techniques, including, but not limited to, evaporation (including but not limited to thermal evaporation and / or electron beam evaporation), photolithography, printing (including but not limited to inkjet and / or vapor jet printing, reel-to-reel printing, and / or microcontact transfer printing), physical vapor deposition (PVD) (including but not limited to sputtering), chemical vapor deposition (CVD) (including but not limited to plasma-enhanced CVD (PECVD) and / or organic vapor phase deposition (OVPD)), laser annealing, laser-induced thermal imaging (LITI) patterning, atomic layer deposition (ALD), coating (including but not limited to spin coating, dip coating, line coating, and / or spray coating), and / or combinations thereof. Some processes can be used in combination with a shadow mask, which can be an open mask and / or a fine metal mask (FMM), in some non-limiting examples, during deposition of any of the various layers and / or coatings to achieve various patterns by covering and / or eliminating deposition of the deposited material on certain portions of the surface of the base material exposed thereto.

[0107] In this disclosure, the terms "evaporation" and / or "sublimation" may be used interchangeably to generally refer to a deposition process in which a source material is converted, including but not limited to, by heating, into a vapor and deposited on a target surface in a solid state, including but not limited to. As will be appreciated, an evaporation process is a type of PVD process in which one or more source materials are evaporated and / or sublimated under a low pressure (including but not limited to vacuum) environment to form vapor monomers that are deposited on a target surface through desublimation of one or more evaporated source materials. Those skilled in the art will appreciate that a variety of different evaporation sources are used to heat the source material, and thus the source material may be heated in a variety of ways. As non-limiting examples, the source material may be heated by an electric filament, an electron beam, induction heating, and / or resistance heating. In some non-limiting examples, the source material may be loaded into a heated crucible, a heated boat, a Knudsen cell (which may be an effusion evaporation source), and / or any other type of evaporation source.

[0108] In some non-limiting examples, the deposition source material may be a mixture, in some non-limiting examples, at least one component of the mixture of deposition source materials may not be deposited (or, in some non-limiting examples, may be deposited in a relatively small amount compared to other components of such a mixture) during the deposition process.

[0109] In this disclosure, references to a layer thickness of a material refer to an amount of material deposited on the target exposed layer surface 111 that corresponds to an amount of material that would cover the target surface with a uniformly thick layer of material having the layer thickness referenced, regardless of the mechanism of that deposition. As a non-limiting example, depositing a layer thickness of a material of 10 nm indicates that the amount of material deposited on the surface corresponds to an amount of material to form a uniformly thick layer of material that is 10 nm thick. With respect to the mechanism by which the thin film is formed discussed above, it will be understood that the actual thickness of the deposited material may be non-uniform due to possible stacking or clustering of monomers (which may be molecules and / or atoms in some non-limiting examples). As a non-limiting example, depositing a layer thickness of 10 nm may result in some portions of the deposited material having an actual thickness greater than 10 nm, or other portions of the deposited material having an actual thickness less than 10 nm. Thus, a certain layer thickness of a material deposited on a surface may correspond to an average thickness of the deposited material across the target surface, including but not limited to, in some non-limiting examples, as a closed film 4530.

[0110] In this disclosure, reference to a reference layer thickness refers to a high initial sticking probability or initial sticking coefficient S 0 (i.e., an initial sticking probability S of about 1 and / or close to 1) 0 The reference layer thickness refers to the layer thickness of conductive coating 830, also referred to herein as conductive coating 831, deposited on a target surface (such as, but not limited to, the surface of nucleation inhibiting coating (NIC) 810). The reference layer thickness does not indicate the actual thickness of conductive coating material 831 deposited on a target surface (such as, but not limited to, the surface of nucleation inhibiting coating (NIC) 810).

[0111] Those skilled in the art will appreciate that such a NIC 810 may be (at least) one of multiple layers of device 100. The NIC 810 may be comprised of a NIC material. Those skilled in the art will appreciate that the NIC 810 and the NIC materials that comprise it may exhibit substantially similar optical and / or other properties, particularly when disposed as a film and under substantially similar conditions and / or by substantially similar mechanisms as those employed in depositing the NIC 810.

[0112] Rather, the reference layer thickness refers to the layer thickness of conductive coating material 831 deposited on a reference surface, in some non-limiting examples, a surface of a quartz crystal positioned inside the deposition chamber to monitor the deposition rate and reference layer thickness when the target surface and reference surface are exposed for the same deposition period and to the same vapor flux of conductive coating material 831. Those skilled in the art will appreciate that appropriate tooling factors may be used to determine and / or monitor the reference layer thickness when the target surface and reference surface are not exposed to the same vapor flux at the same time during deposition.

[0113] In this disclosure, references to depositing a number X of monolayers of a material refer to depositing a quantity of material to cover a desired area of ​​the exposed layer surface 111 with X monolayers of the constituent monomers of the material, such as, but not limited to, a closed film 4530.

[0114] The formation of a thin film during deposition onto the exposed layer surface 111 of a base material involves a process of nucleation and growth. During the initial stages of film formation, a sufficient number of vapor monomers (which may be molecules and / or atoms, in some non-limiting examples) typically condense from the gas phase to form initial nuclei on the presented exposed layer surface 111, whether that be the substrate 110 (or an intervening underlayer 120, 130, 140). As the vapor monomers continue to impinge onto such surfaces, the size and density of these initial nuclei increases to form small clusters or islands. After saturating the island density, neighboring islands generally begin to coalesce, increasing the average size of the islands while decreasing the island density. The coalescence of neighboring islands may continue until a substantially closed film 4530 is formed.

[0115] However, prior to the formation of the substantially closed film 4530, deposition of the vapor monomer may result in a thin film structure as described herein, which may exhibit one or more of a variety of characteristics and associated behaviors, including but not limited to optical effects.

[0116] In this disclosure, reference to depositing a monolayer of a fraction 0.X of a material refers to depositing a quantity of material to cover a fraction 0.X of a desired area of ​​a surface with a monolayer of the constituent monomers of the material. Those skilled in the art will appreciate that, as a non-limiting example, the actual local thickness of the deposited material across the desired area of ​​the surface may be non-uniform due to possible stacking and / or clustering of the monomers. As a non-limiting example, depositing one monolayer of a material may result in some localized regions of the desired area of ​​the surface not being covered by the material, while other localized regions of the desired area of ​​the surface may have multiple atomic and / or molecular layers deposited thereon.

[0117] In the present disclosure, a target surface (and / or a target region thereof) may be considered to be "substantially free of," "substantially free of," or "substantially uncovered by" a material if there is a substantial lack of material on the target surface as determined by any suitable determination mechanism.

[0118] In this disclosure, for ease of explanation, the result of vapor monomer deposition on the exposed layer surface 111 of the base material that has not (yet) reached the stage where the closed film 4530 has been formed will be referred to as a "clustering layer." In some non-limiting examples, such a clustering layer may reflect that the deposition process is not complete, and such a clustering layer may be considered an intermediate stage in the formation of the closed film 4530. In some non-limiting examples, the clustering layer may be the result of a completed deposition process, and thus constitute a final stage in and of its formation.

[0119] In this disclosure, for ease of explanation, the term "discontinuous coating" 1050 as used herein refers to a clustering layer that is substantially free of such material or that does not form a closed film 4530 thereof on the relevant portion of the exposed layer surface 111 of the base material that is coated by the deposition process. In some non-limiting examples, the discontinuous coating 1050 of conductive coating material 831 may appear as a plurality of individual islands deposited on such surface.

[0120] In this disclosure, for ease of explanation, the term "dendritic" with respect to a coating, including but not limited to conductive coating 830, refers to features that resemble a branched structure when viewed from a lateral profile. In some non-limiting examples, conductive coating 830 may include dendrites 1021 and / or dendritic depressions 1022. In some non-limiting examples, dendrites 1021 may correspond to a portion of conductive coating 830 exhibiting a branched structure including multiple short projections that are physically connected and extend substantially outward. In some non-limiting examples, dendritic depressions 1022 may correspond to a branched structure of gaps, openings, and / or uncovered portions of conductive coating 830 that are physically connected and extend substantially outward. In some non-limiting examples, dendritic depressions 1022 may correspond to a pattern of dendrites 1021, including but not limited to mirror image and / or inverse patterns. In some non-limiting examples, the dendrites 1021 and / or dendritic depressions 1022 may have a configuration that exhibits and / or mimics a fractal pattern, a mesh, a web, and / or an interdigitated structure.

[0121] In some non-limiting examples, after formation of the discontinuous coating 1050 but prior to formation of the closed film 4530, there may be a clustering layer reflecting an intermediate stage of vapor monomer deposition, with continued coalescence of clusters and / or islands 5001, 5002 continuing until the number of remaining clusters and / or islands 5001, 5002 approaches zero. When such an intermediate stage clustering layer is reached, the deposited monomer may form an intermediate stage thin film that may, in some non-limiting examples, comprise a fraction 0.X of a single monolayer, such that there may be apertures and / or gaps in the film coverage, including, but not limited to, one or more dendrites 1021 and / or one or more dendritic depressions 1022, and it is not a closed film 4530 in that it still remains substantially conductive.

[0122] The formation of a thin film, initially as a clustering layer and, in some non-limiting examples, ultimately becoming a closed film 4530, can have at least three fundamental growth modes: 1) islands (Volmer-Weber), 2) layer-by-layer (Frank-van der Merwe), and 3) Stranski-Krastanov.

[0123] In this disclosure, the terms "island" and "cluster" may be used interchangeably to refer to a similar concept.

[0124] Island growth typically occurs when stable clusters of monomers nucleate on a surface and grow to form discrete islands. This growth mode occurs when the interactions between monomers are stronger than the interactions between the monomers and the surface.

[0125] Nucleation rate describes how many nuclei of a given size (when free energy does not push clusters of such nuclei to grow or shrink) ("critical nuclei") form on a surface per unit time. During the early stages of film formation, the density of nuclei is low, which causes the nuclei to cover a relatively small portion of the surface (e.g., there are large gaps / spaces between neighboring nuclei), so nuclei are unlikely to grow from direct collisions of monomers on the surface. Thus, the rate at which critical nuclei grow typically depends on the rate at which adatoms on the surface (e.g., adsorbed monomers) can migrate and attach to nearby nuclei.

[0126] An example energy profile of an adatom adsorbed on an exposed layer surface 111 of a base material (illustratively, substrate 110) is shown in Figure 6. Specifically, Figure 6 shows example qualitative energy profiles corresponding to an adatom escaping from a localized low energy site (610), diffusion of the adatom at the exposed layer surface 111 (620), and desorption of the adatom (630).

[0127] In 610, a local low energy site can be any site on the exposed layer surface 111 of the base material where an adatom becomes lower energy. Typically, a nucleation site can include defects and / or anomalies on the exposed layer surface 111, including, but not limited to, step edges, chemical impurities, bond sites, and / or kinks. When an adatom becomes trapped at a local low energy site, there may typically be an energy barrier before surface diffusion can occur. Such an energy barrier is represented as ΔE 611 in FIG. 6. In some non-limiting examples, if the energy barrier ΔE 611 for escape from a local low energy site is large enough, the site may act as a nucleation site.

[0128] In 620, the adatoms may diffuse onto the exposed layer surface 111. As a non-limiting example, in the case of localized adsorbates, the adatoms oscillate about a minimum in the surface potential and tend to move to various nearby sites until they desorb and / or become incorporated into the growing film and / or growing islands formed by clusters of adatoms 5001, 5002. In FIG. 6, the activation energy associated with surface diffusion of adatoms is E s It is represented as 621.

[0129] At 630, the activation energy associated with the desorption of adatoms from the surface is E des 631. One skilled in the art will appreciate that any adatoms that are not desorbed may remain on exposed layer surface 111. By way of non-limiting example, such adatoms may diffuse onto exposed layer surface 111 where they become incorporated as part of a growing film and / or coating, and / or become part of clusters of adatoms 5001, 5002 that form islands on exposed layer surface 111.

[0130] After an adatom adsorbs on a surface, it can either detach from the surface or move for some distance on the surface before detaching and interacting with other adatoms to form small clusters or attaching to growing nuclei. The average time that an adatom remains on the surface after initial adsorption is given by

number

[0131] In the above equation, v is the vibrational frequency of the surface adatoms, k is the Boltzmann constant, T is the temperature, and E des 631 is the energy required to desorb an adatom from the surface. From this equation, E des The lower the value of 631, the easier it is for adatoms to detach from the surface, and therefore the shorter the time they remain on the surface. The average distance that an adatom can diffuse is given by:

number

[0132] During the initial stages of film formation, the adsorbed adatoms can interact to form clusters, and the critical concentration of clusters per unit area is given by

number

number

number

[0133] The critical monomer supply rate for growing clusters is given by the rate of vapor impingement and the average area over which adatoms can diffuse before detaching.

number

[0134] The critical nucleation rate is therefore given by the combination of the above equations.

number

[0135] From the above equation, it can be seen that the critical nucleation rate is suppressed on surfaces that have a low desorption energy of adsorbed adatoms, a high activation energy for adatom diffusion, high temperatures, and / or surfaces that are subject to vapor impingement velocities.

[0136] Sites of substrate inhomogeneity, such as defects, ledges, or step edges, are identified as E des 631, leading to a higher density of nuclei observed at such sites. Impurities or surface contamination may also increase E des 631 and may increase nucleation density. For deposition processes performed under high vacuum conditions, the type and density of surface contaminants is influenced by the vacuum pressure and the composition of the residual gases that make up that pressure.

[0137] Under high vacuum conditions, the flux of molecules impinging on the surface (cm 2 -per sec) is given by:

number

[0138] In some non-limiting examples, one measure of the amount of material on a surface is the coverage of the surface by such material. In some non-limiting examples, surface coverage can be determined using a variety of imaging techniques, including, but not limited to, transmission electron microscopy (TEM), atomic force microscopy (AFM), and / or scanning electron microscopy (SEM).

[0139] Conductive materials, including but not limited to silver (Ag), magnesium (Mg), and / or ytterbium (Yb), in some non-limiting examples, attenuate and / or adsorb photons, so in some non-limiting examples, one measure of the amount of conductive material on a surface is the (light) transmittance.

[0140] Thus, in some non-limiting examples, a surface of a material can be considered to be substantially free of conductive material if the light transmission through the surface of the material is greater than 90%, greater than 92%, greater than 95%, and / or greater than 98% than the transmission of a reference material of similar composition and dimensions of such material, in some non-limiting examples in the visible portion of the electromagnetic spectrum.

[0141] In this disclosure, details of the deposited materials, including but not limited to layer thickness profiles and / or edge profiles, are omitted for ease of illustration. A variety of possible edge profiles at the interface between the NIC 810 and the conductive coating 830 are discussed herein.

[0142] substrate In some examples, the substrate 110 may comprise a base substrate 112. In some examples, the base substrate 112 may be formed from a material suitable for its use, including, but not limited to, inorganic materials, including, but not limited to, silicon (Si), glass, metal (including, but not limited to, metal foil), sapphire, and / or other inorganic materials, and / or organic materials, including, but not limited to, polymers, including, but not limited to, polyimides and / or silicon-based polymers. In some examples, the base substrate 112 may be rigid or flexible. In some examples, the substrate 112 may be defined by at least one planar surface. The substrate 110 has at least one surface that supports the remaining front plane 10 components of the device 100, including, but not limited to, the first electrode 120, at least one semiconductive layer 130, and / or the second electrode 140.

[0143] In some non-limiting examples, such surfaces can be organic and / or inorganic surfaces.

[0144] In some examples, the substrate 110 may include, in addition to the base substrate 112, one or more additional organic and / or inorganic layers (not shown or specifically described herein) supported on the exposed layer surface 111 of the base substrate 112.

[0145] In some non-limiting examples, such additional layers may include and / or form one or more organic layers, which may include, replace, and / or supplement one or more of the at least one semiconducting layer 130.

[0146] In some non-limiting examples, such additional layers can include one or more inorganic layers, which can include and / or form one or more electrodes, which can include, replace, and / or supplement first electrode 120 and / or second electrode 140, in some non-limiting examples.

[0147] In some non-limiting examples, such additional layers may include and / or be formed from and / or as a backplane layer 20 (FIG. 2) of semiconductive material. In some non-limiting examples, the backplane layer 20 contains power circuitry and / or switching elements for driving the device 100, including but not limited to electronic TFT structures and / or components thereof 200 (FIG. 2), which may be formed by photolithographic processes that may not be provided under and / or precede the introduction of a low pressure (including but not limited to a vacuum) environment.

[0148] In the present disclosure, a semiconducting material can be generally described as a material that exhibits a band gap. In some non-limiting examples, the band gap can be formed between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the semiconducting material. Thus, a semiconducting material generally exhibits a lower conductivity than a conductive material (including but not limited to metals) but a higher conductivity than an insulating material (including but not limited to glass). In some non-limiting examples, the semiconducting material can include an organic semiconducting material. In some non-limiting examples, the semiconducting material can include an inorganic semiconducting material.

[0149] Backplane and TFT structure embodied therein FIG. 2 is a simplified cross-sectional view of an example of a substrate 110 of a device 100, including its backplane layer 20. In some non-limiting examples, the backplane 20 of the substrate 110 may include one or more electronic and / or optoelectronic components, including but not limited to transistors, resistors, and / or capacitors, capable of supporting the device 100 acting as an active matrix and / or passive matrix device. In some non-limiting examples, such a structure may be a thin film transistor (TFT) structure, as shown at 200. In some non-limiting examples, the TFT structure 200 may be fabricated using organic and / or inorganic materials to form a portion of the backplane layer 20 of the substrate 110 above the various layers 210, 220, 230, 240, 250, 270, 270, 280, and / or the base substrate 112. In FIG. 2, the TFT structure 200 shown is a top-gate TFT. In some non-limiting examples, TFT technology and / or structures, including but not limited to one or more of layers 210, 220, 230, 240, 250, 270, 270, 280, may be employed to implement non-transistor components, including but not limited to resistors and / or capacitors.

[0150] In some non-limiting examples, the backplane 20 may include a buffer layer 210 deposited on the exposed layer surface 111 of the base substrate 112 to support components of the TFT structure 200. In some non-limiting examples, the TFT structure 200 may include a semiconductive active region 220, a gate insulating layer 230, a TFT gate electrode 240, an interlayer insulating layer 250, a TFT source electrode 260, a TFT drain electrode 270, and / or a TFT insulating layer 280. In some non-limiting examples, the semiconductive active region 220 is formed on a portion of the buffer layer 210, and the gate insulating layer 230 is deposited to substantially cover the semiconductive active region 220. In some non-limiting examples, the gate electrode 240 is formed on the top surface of the gate insulating layer 230, and the interlayer insulating layer 250 is deposited thereon. A TFT source electrode 270 and a TFT drain electrode 270 are formed such that they extend through openings formed through both the interlayer insulating layer 250 and the gate insulating layer 230 such that they are electrically coupled to the semiconductor active area 220. A TFT insulating layer 280 is then formed over the TFT structure 200.

[0151] In some non-limiting examples, one or more of the layers 210, 220, 230, 240, 250, 270, 270, 280 of the backplane 20 can be patterned using photolithography, using a photomask to expose selected portions of the photoresist covering the underlying device layer to UV light. Depending on the type of photoresist used, the exposed or unexposed portions of the photomask can then be removed to expose the desired portions of the underlying device layer. In some examples, the photoresist is a positive photoresist, the selected portions of which are exposed to UV light cannot then be substantially removed, while the remaining portions not so exposed can then be substantially removed. In some non-limiting examples, the photoresist is a negative photoresist, the selected portions of which are exposed to UV light can then be substantially removed, while the remaining portions not so exposed can then be substantially removed. Thus, the patterned surface can be etched, including but not limited to chemically and / or physically, and / or washed away and / or washed away to effectively remove exposed portions of such layers 210, 220, 230, 240, 250, 260, 270, 280.

[0152] Additionally, although a top-gate TFT structure 200 is shown in FIG. 2, those skilled in the art will understand that other TFT structures, including but not limited to bottom-gate TFT structures, may be formed within backplane 20 without departing from the scope of the present disclosure.

[0153] In some non-limiting examples, the TFT structure 200 can be an n-type TFT and / or a p-type TFT. In some non-limiting examples, the TFT structure 200 can incorporate any one or more of amorphous Si (a-Si), indium gallium zinc (Zn) oxide (IGZO), and / or low temperature polycrystalline Si (LTPS).

[0154] First electrode A first electrode 120 is deposited on the substrate 110. In some non-limiting examples, the first electrode 120 is electrically coupled to a terminal of a power source 15 and / or to ground. In some non-limiting examples, the first electrode 120 is so coupled through at least one drive circuit 300 (FIG. 3), which in some non-limiting examples may incorporate at least one TFT structure 200 in a backplane 20 of the substrate 110.

[0155] In some non-limiting examples, the first electrode 120 can include an anode 341 (FIG. 3) and / or a cathode 342 (FIG. 3). In some non-limiting examples, the first electrode 120 is an anode 341.

[0156] In some non-limiting examples, the first electrode 120 can be formed by depositing at least one conductive thin film on (a portion of) the substrate 110. In some non-limiting examples, there may be a plurality of first electrodes 120 arranged in a spatial arrangement on the lateral sides of the substrate 110. In some non-limiting examples, one or more of such at least one first electrode 120 can be deposited on (a portion of) the TFT insulating layer 280 arranged on the lateral sides in a spatial arrangement. If so, in some non-limiting examples, at least one of such at least one first electrode 120 can extend through an opening in the corresponding TFT insulating layer 280 and be electrically coupled to the electrodes 240, 260, 270 of the TFT structure 200 in the backplane 20, as shown in FIG. 4. In FIG. 4, a portion of the at least one first electrode 120 is shown coupled to the TFT drain electrode 270.

[0157] In some non-limiting examples, the at least one first electrode 120 and / or at least one thin film thereof may comprise one or more of a variety of materials, including but not limited to one or more metallic materials, including but not limited to Mg, aluminum (Al), calcium (Ca), Zn, Ag, cadmium (Cd), barium (Ba), and / or Yb, and / or combinations of any two or more thereof, including but not limited to alloys containing any of such materials, one or more oxides, including but not limited to transparent conductive oxides (TCOs), including but not limited to ternary compositions such as fluorine tin oxide (FTO), indium zinc oxide (IZO), and / or indium tin oxide (ITO), and / or combinations of any two or more thereof and / or in various ratios and / or combinations of any two or more thereof within at least one layer, including but not limited to any one or more of what may be a thin film.

[0158] In some non-limiting examples, the conductive thin film comprising the first electrode 120 may be selectively deposited, deposited, and / or processed using a variety of techniques, including, but not limited to, evaporation (including but not limited to thermal evaporation and / or e-beam evaporation), photolithography, printing (including but not limited to inkjet and / or evaporative jet printing, reel-to-reel printing, and / or microcontact transfer printing), PVD (including but not limited to sputtering), CVD (including but not limited to PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including but not limited to spin coating, dip coating, line coating, and / or spray coating), and / or combinations of any two or more thereof.

[0159] Second electrode A second electrode 140 is deposited on the at least one semiconductive layer 130. In some non-limiting examples, the second electrode 140 is electrically coupled to a terminal of a power source 15 and / or to ground. In some non-limiting examples, the second electrode 140 is so coupled through at least one drive circuit 300 which, in some non-limiting examples, may incorporate at least one TFT structure 200 in the backplane 20 of the substrate 110.

[0160] In some non-limiting examples, the second electrode 140 can include an anode 341 and / or a cathode 342. In some non-limiting examples, the second electrode 130 is a cathode 342.

[0161] In some non-limiting examples, the second electrode 140 can be formed by depositing a conductive coating 830, in some non-limiting examples as at least one thin film on (a portion of) the at least one semiconductive layer 130. In some non-limiting examples, there can be multiple second electrodes 140 disposed in a spatial arrangement on lateral sides of the at least one semiconductive layer 130.

[0162] In some non-limiting examples, sheet resistance is a property of a component, layer, and / or part that may change the characteristics of the current passing through such component, layer, and / or part. In some non-limiting examples, the sheet resistance R1 of the second electrode 140 may generally correspond to the sheet resistance of the second electrode 140 measured separately from other components, layers, and / or parts of the device 100. In some non-limiting examples, the second electrode 140 may be formed as a thin film. Thus, in some non-limiting examples, the sheet resistance R1 for the second electrode 140 may be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance R1 can be about 0.1-1,000 Ω / sqr, about 1-100 Ω / sqr, about 2-50 Ω / sqr, about 3-30 Ω / sqr, about 4-20 Ω / sqr, about 5-15 Ω / sqr, and / or about 10-12 Ω / sqr.

[0163] In some non-limiting examples, the second electrode 140 can be composed of a second electrode material.

[0164] In some non-limiting examples, the bond dissociation energy of a metal may correspond to the standard state enthalpy change measured at 298 K from breaking a bond of a diatomic molecule formed by two identical atoms of the metal. The bond dissociation energy may be determined based on known literature, including, but not limited to, Luo, Yu-ran, “Bond dissociation energies” (2010), as a non-limiting example. In some non-limiting examples, the second electrode material may include a metal having a bond dissociation energy of at least 10 kJ / mol, at least 50 kJ / mol, at least 100 kJ / mol, at least 150 kJ / mol, at least 180 kJ / mol, and / or at least 200 kJ / mol.

[0165] In some non-limiting examples, the second electrode material can include a metal having an electronegativity that is less than about 1.4, about 1.3, and / or about 1.2.

[0166] In some non-limiting examples, the second electrode material may include an element selected from potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), and / or tungsten (W). In some non-limiting examples, the element may include Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Mg, Zn, Cd, and / or Yb. In some non-limiting examples, the element may include Sn, Ni, Ti, Pd, Cr, Fe, and / or Co. In some non-limiting examples, the element may include Zr, Pt, V, Nb, Ir, and / or Os. In some non-limiting examples, the element may include Ta, Mo, and / or W. In some non-limiting examples, the element may include Mg, Ag, Al, Yb, and / or Li. In some non-limiting examples, the element may include Mg, Ag, and / or Yb. In some non-limiting examples, the element may include Mg and / or Ag. In some non-limiting examples, the element may be Ag.

[0167] In some non-limiting examples, the second electrode material can include a pure metal. In some non-limiting examples, the second electrode material is a pure metal. In some non-limiting examples, the second electrode material is pure Ag or substantially pure Ag. In some non-limiting examples, the second electrode material is pure Mg or substantially pure Mg. In some non-limiting examples, the second electrode material is pure Al or substantially pure Al.

[0168] In some non-limiting examples, the second electrode material can include an alloy, hi some non-limiting examples, the alloy can be an Ag-containing alloy and / or an AgMg-containing alloy.

[0169] In some non-limiting examples, the second electrode material may include other metals as a substitute for and / or in combination with Ag. In some non-limiting examples, the second electrode material may include an alloy of Ag with at least one other metal. In some non-limiting examples, the second electrode material may include an alloy of Ag with Mg and / or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of about 5% Ag by volume to about 95% Ag by volume, with the remainder being other metals. In some non-limiting examples, the second electrode material includes Ag and Mg. In some non-limiting examples, the second electrode material includes a Mg:Ag alloy having a composition of about 1:10 to about 10:1 by volume. In some non-limiting examples, the second electrode material includes Ag and Yb. In some non-limiting examples, the second electrode material includes a Yb:Ag alloy having a composition of about 1:20 to about 1:10 by volume. In some non-limiting examples, the second electrode material includes Mg and Yb. In some non-limiting examples, the second electrode material includes a Mg:Yb alloy. In some non-limiting examples, the second electrode material includes Ag, Mg, and Yb. In some non-limiting examples, the second electrode material includes a Ag:Mg:Yb alloy.

[0170] In some non-limiting examples, the second electrode material may include oxygen (O). In some non-limiting examples, the second electrode material may include at least one metal and O. In some non-limiting examples, the second electrode material may include a metal oxide. In some non-limiting examples, the metal oxide may include Zn, indium (I), tin (Sn), antimony (Sb), and / or gallium (Ga). In some non-limiting examples, the metal oxide may be a transparent conductive oxide (TCO). In some non-limiting examples, the TCO may include indium oxide, tin oxide, antimony oxide, and / or gallium oxide. In some non-limiting examples, the TCO may include indium titanium oxide (ITO), ZnO, indium zinc oxide (IZO), and / or indium gallium zinc oxide (IGZO). In some non-limiting examples, the TCO may be electrically doped with other elements.

[0171] In some non-limiting examples, the second electrode 140 can be formed from a metal and / or a metal alloy.

[0172] In some non-limiting examples, the second electrode 140 can include at least one metal or metal alloy and at least one metal oxide.

[0173] In some non-limiting examples, the second electrode 140 can include multiple layers of a second electrode material. In some non-limiting examples, the second electrode material of a first layer of the multiple layers can be different from the second electrode material of a second layer of the multiple layers. In some non-limiting examples, the second electrode material of a first layer of the multiple layers can include a metal and the second electrode material of a second layer of the multiple layers can include a metal oxide.

[0174] In some non-limiting examples, the second electrode material of at least one of the layers can include Yb. In some non-limiting examples, the second electrode material of one of the layers can include an Ag-containing alloy and / or an AgMg-containing alloy, and / or pure Ag, substantially pure Ag, pure Mg, and / or substantially pure Mg. In some non-limiting examples, the second electrode 140 is a bilayer Yb / AgMg coating.

[0175] In some non-limiting examples, a first layer of the layers proximal to the NIC 810 (top) may include an element selected from Ag, Au, Cu, Al, Sn, Ni, Ti, Pd, Cr, Fe, Co, Zr, Pt, V, Nb, Ir, Os, Ta, Mo, and / or W. In some non-limiting examples, the element may include Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Sn, Ti, Pd, Cr, Fe, and / or Co. In some non-limiting examples, the element may include Ni, Zr, Pt, V, Nb, Ir, and / or Os. In some non-limiting examples, the element may include Ta, Mo, and / or W. In some non-limiting examples, the element may include Mg, Ag, and / or Al. In some non-limiting examples, the element can include Mg and / or Ag. In some non-limiting examples, the element can be Ag.

[0176] In some non-limiting examples, the second electrode 140 may include at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic material may be oxygen (O), sulfur (S), nitrogen (N), and / or carbon (C). Those skilled in the art will appreciate that in some non-limiting examples, such additional elements may be incorporated into the second electrode 140 as contaminants by the presence of such additional elements in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the concentration of such additional elements may be limited to be below a threshold concentration. In some non-limiting examples, such additional elements may form compounds with other elements of the second electrode 140. In some non-limiting examples, the concentration of non-metallic elements in the conductive coating material can be less than about 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and / or about 0.0000001%. In some non-limiting examples, the conductive coating 830 has a composition in which the total amount of O and C therein is less than about 10%, about 5%, about 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and / or about 0.0000001%. In some non-limiting examples, the second electrode 140 can include a closed coating 4530. In some non-limiting examples, the second electrode 140 can include a discontinuous coating 1050.

[0177] In some non-limiting examples, the second electrode 140 may be arranged in a pattern that may be defined by at least one region therein that is substantially free of the closed coating 4530 of the second electrode 140 on the first layer surface within the first portion 115. In some non-limiting examples, the at least one region has a metal patterning NIC 810 disposed thereon. In some non-limiting examples, the at least one region may separate the second electrode 140 into a plurality of individual fragments thereof. In some non-limiting examples, at least two of such a plurality of individual fragments of the second electrode 140 may be electrically coupled. In some non-limiting examples, at least two of such a plurality of individual fragments of the second electrode 140 may each be electrically coupled to a common conductive layer or coating, including but not limited to the conductive coating 830, to enable the flow of current therebetween. In some non-limiting examples, at least two of such a plurality of individual fragments of the second electrode 140 may be electrically insulated from one another.

[0178] In some non-limiting examples, the conductive thin film comprising the second electrode 140 may be selectively applied, deposited, and / or processed using a variety of techniques, including, but not limited to, evaporation (including but not limited to thermal evaporation and / or electron beam evaporation), photolithography, printing (including but not limited to inkjet and / or evaporative jet printing, reel-to-reel printing, and / or microcontact transfer printing), PVD (including but not limited to sputtering), CVD (including but not limited to PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including but not limited to spin coating, dip coating, line coating, and / or spray coating), and / or combinations of any two or more thereof.

[0179] For ease of explanation, in this disclosure, a combination of multiple elements in a single layer is indicated by separating two such elements by a colon ":", while a (combination of) multiple elements comprising multiple layers in a multi-layer coating is indicated by separating two such layers with a slash " / ". In some non-limiting examples, the layer after the slash may be deposited on the layer before the slash.

[0180] In some non-limiting examples, for Mg:Ag alloys, the composition of such alloys may range from about 1:10 to about 10:1 by volume.

[0181] In some non-limiting examples, deposition of the second electrode 140 can be performed using an open mask and / or a mask-free deposition process.

[0182] Drive circuit In the present disclosure, the concept of sub-pixels 2641-2643 (FIG. 26) may be referred to herein as sub-pixel 264x for ease of explanation only. Similarly, in the present disclosure, the concept of pixel 340 (FIG. 3) may be considered in conjunction with the concept of its at least one sub-pixel 264x. For ease of explanation only, such combined concept is referred to herein as "(sub)pixel 340 / 264x," and such terminology is understood to imply either or both of pixel 340 and / or its at least one sub-pixel 264x, unless the context dictates otherwise.

[0183] 3 is a circuit diagram of an example of a drive circuit as may be provided by one or more of the TFT structures 200 shown in the backplane 20. In the example shown, the circuit generally indicated at 300 is for providing current to the first electrode 120 and the second electrode 140 and for an example of a drive circuit for an active matrix OLED (AMOLED) device 100 (and / or its (sub)pixels 340 / 264x) for controlling the emission of photons from the device 100 (and / or (sub)pixels 340 / 264x). Although the illustrated circuit 300 is shown incorporating multiple p-type top-gate thin-film TFT structures 200, the circuit 300 may equally incorporate one or more p-type bottom-gate TFT structures 200, one or more n-type top-gate TFT structures 200, one or more n-type bottom-gate TFT structures 200, one or more other TFT structures 200, and / or any combination thereof, whether formed as one or more thin-film layers. The circuit 300 includes, in some non-limiting examples, a switching TFT 310, a driving TFT 320, and a storage capacitor 330.

[0184] A (sub)pixel 340 / 264x of the OLED display 100 is represented by a diode 340. A source 311 of the switching TFT 310 is coupled to a data (or, in some non-limiting examples, a column select) line 30. A gate 312 of the switching TFT 310 is coupled to a gate (or, in some non-limiting examples, a row select) line 31. A drain 313 of the switching TFT 310 is coupled to a gate 322 of the driving TFT 320.

[0185] The source 321 of the driving TFT 320 is coupled to the positive (or negative) terminal of the power supply 15. The (positive) terminal of the power supply 15 is represented by an electrical supply line (VDD) 32.

[0186] The drain 323 of the driving TFT 320 is coupled to the anode 341 (which in some non-limiting examples may be the first electrode 120) of the diode 340 (which represents the (sub)pixel 340 / 264x of the OLED display 100) such that the driving TFT 320 and the diode 340 (and / or the (sub)pixel 340 / 264x of the OLED display 100) are coupled in series between the electrical supply line (VDD) 32 and ground.

[0187] The cathode 342 (which in some non-limiting examples may be the second electrode 140) of the diode 340 (representing the (sub)pixel 340 / 264x of the OLED display 100) is represented as a resistor 350 in the circuit 300.

[0188] The storage capacitor 330 is coupled at its respective ends to the source 321 and gate 322 of the driving TFT 320. The driving TFT 320 limits the current passing through the diode 340 (representing a (sub)pixel 340 / 264x of the OLED display 100) according to the voltage of the charge stored in the storage capacitor 330, such that the diode 340 outputs the desired brightness. The voltage of the storage capacitor 330 is set by the switching TFT 310, which couples it to the data line 30.

[0189] In some non-limiting examples, compensation circuit 370 is provided to compensate for any deviations in transistor characteristics from variations in the manufacturing process and / or degradation of switching TFT 310 and / or driving TFT 320 over time.

[0190] Semiconductive layer In some non-limiting examples, the at least one semiconductive layer 130 can comprise multiple layers 131, 133, 135, 137, 139, any of which can be arranged in a thin film in a stacked configuration that can include, in some non-limiting examples, any one or more of a hole injection layer (HIL) 131, a hole transport layer (HTL) 133, an emissive layer (EML) 135, an electron transport layer (ETL) 137, and / or an electron injection layer (EIL) 139. In this disclosure, the term "semiconductive layer" can be used interchangeably with "organic layer" since the layers 131, 133, 135, 137, 139 in the OLED device 100 can include organic semiconductive materials in some non-limiting examples.

[0191] In some non-limiting examples, at least one semiconducting layer 130 can form a "tandem" structure that includes multiple EMLs 135. In some non-limiting examples, such a tandem structure can also include at least one charge generation layer (CGL).

[0192] In some non-limiting examples, thin films, including layers 131, 133, 135, 137, 139 in a stack that constitutes at least one semiconductive layer 130, may be selectively applied, deposited, and / or processed using a variety of techniques, including, but not limited to, evaporation (including but not limited to thermal evaporation and / or electron beam evaporation), photolithography, printing (including but not limited to inkjet and / or evaporative jet printing, reel-to-reel printing, and / or microcontact transfer printing), PVD (including but not limited to sputtering), CVD (including but not limited to PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including but not limited to spin coating, dip coating, line coating, and / or spray coating), and / or combinations of any two or more thereof.

[0193] Those skilled in the art will readily appreciate that the structure of device 100 may be modified by omitting and / or combining one or more of semiconducting layers 131, 133, 135, 137, 139.

[0194] Further, any of the layers 131, 133, 135, 137, 139 of the at least one semiconducting layer 130 may include any number of sublayers. Still further, any such layers 131, 133, 135, 137, 139, and / or any of their sublayers may include various mixtures and / or compositional gradients. In addition, one skilled in the art will appreciate that the device 100 may include one or more layers containing inorganic and / or organometallic materials, and is not necessarily limited to devices composed solely of organic materials. As a non-limiting example, the device 100 may include one or more quantum dots.

[0195] In some non-limiting examples, the HIL 131 can be formed using a hole-injecting material that can facilitate the injection of holes by the anode 341.

[0196] In some non-limiting examples, HTL 133 can be formed using a hole transport material that can exhibit high hole mobility in some non-limiting examples.

[0197] In some non-limiting examples, the ETL 137 can be formed using an electron transporting material that can exhibit high electron mobility in some non-limiting examples.

[0198] In some non-limiting examples, the EIL 139 can be formed using an electron injecting material that can facilitate the injection of electrons by the cathode 342 .

[0199] In some non-limiting examples, the EML 135 can be formed by doping a host material with at least one emitter material, as a non-limiting example, In some non-limiting examples, the emitter material can be a fluorescent emitter, a phosphorescent emitter, a thermally activated delayed fluorescent (TADF) emitter, and / or any combination of a plurality thereof.

[0200] In some non-limiting examples, the device 100 may be an OLED that includes at least an EML 135 in which at least one semiconductive layer 130 is sandwiched between conductive thin-film electrodes 120, 140, such that upon application of a potential difference across them, holes are injected into the at least one semiconductive layer 130 through the anode 341 and electrons are injected into the at least one semiconductive layer 130 through the cathode 342.

[0201] The injected holes and electrons tend to travel through the various layers 131, 133, 135, 137, 139 until they reach and meet each other. When holes and electrons are in close proximity, they tend to be attracted to each other by Coulomb forces and in some instances may combine to form a bound-state electron-hole pair referred to as an exciton. In particular, when an exciton is formed in the EML 135, the exciton may decay through a radiative recombination process in which a photon is emitted. The type of radiative recombination process may depend on the spin state of the exciton. In some instances, the exciton may be characterized as having a singlet or triplet spin state. In some non-limiting examples, the radiative decay of a singlet exciton may result in fluorescence. In some non-limiting examples, the radiative decay of a triplet exciton may result in phosphorescence.

[0202] More recently, other photon emission mechanisms for OLEDs have been proposed and investigated, including, but not limited to, TADF. In some non-limiting examples, TADF emission occurs via the conversion of triplet excitons to singlet excitons via a thermal energy-assisted reverse intersystem crossing process, followed by radiative decay of the singlet excitons.

[0203] In some non-limiting examples, the exciton may decay through a non-radiative process in which no photon is released, particularly if the exciton is not formed within the EML 135.

[0204] In this disclosure, the term "internal quantum efficiency" (IQE) of an OLED device 100 refers to the fraction of all electron-hole pairs generated within the device 100 that decay through the process of radiative recombination and emit a photon.

[0205] In this disclosure, the term "external quantum efficiency" (EQE) of an OLED device 100 refers to the ratio of charge carriers delivered to the device 100 to the number of photons emitted by the device 100. In some non-limiting examples, an EQE of 100% indicates that one photon is emitted for every electron injected into the device 100.

[0206] Those skilled in the art will appreciate that the EQE of a device 100 may, in some non-limiting examples, be substantially lower than the IQE of the same device 100. The difference between the EQE and IQE of a given device 100 may be due to a number of factors, including, but not limited to, in some non-limiting examples, photon absorption and reflection caused by various components of the device 100.

[0207] In some non-limiting examples, device 100 can be an electroluminescent quantum dot device that includes an active layer with at least one semiconductive layer 130 that includes at least one quantum dot. When a current is provided by power source 15 to first electrode 120 and second electrode 140, photons are emitted from the active layer, including at least one semiconductive layer 130 therebetween.

[0208] Those skilled in the art will readily appreciate that the structure of device 100 can be altered by introducing one or more additional layers (not shown) at appropriate locations within the at least one semiconducting layer 130 stack, including, but not limited to, a hole blocking layer (not shown), an electron blocking layer (not shown), an additional charge transport layer (not shown), and / or an additional charge injection layer (not shown).

[0209] Barrier Coating In some non-limiting examples, a barrier coating 1650 can be provided to surround and / or encapsulate various layers of the first electrode 120, the second electrode 140, and the at least one semiconductive layer 130, and / or the substrate 110 disposed thereover of the device 100.

[0210] In some non-limiting examples, a barrier coating 1650 may be provided to inhibit exposure of the various layers 120, 130, 140 of the device 100, including at least one semiconductive layer 130 and / or cathode 342, to moisture and / or ambient air, since these layers 120, 130, 140 are prone to oxidation.

[0211] In some non-limiting examples, application of the barrier coating 1650 to a highly uneven surface may increase the likelihood of poor adhesion of the barrier coating 1650 to such a surface.

[0212] In some non-limiting examples, a lack of barrier coating 1650 and / or a poorly applied barrier coating 1650 may cause and / or contribute to defects and / or partial and / or total failure in the device 100. In some non-limiting examples, a poorly applied barrier coating 1650 may reduce adhesion of the barrier coating 1650 to the device 100. In some non-limiting examples, poor adhesion of the barrier coating 1650 may increase the likelihood that the barrier coating 1650 will peel off from all or a portion of the device 100, especially when the device 100 is flexed and / or bent. In some non-limiting examples, a poorly applied barrier coating 1650 may trap air pockets during application of the barrier coating 1650 between the barrier coating 1650 and the base surface of the device 100 to which the barrier coating 1650 is applied.

[0213] In some non-limiting examples, the barrier coating 1650 may be a thin film encapsulation (TFE) layer 2050 (FIG. 20B), which may be selectively applied, deposited, and / or processed using a variety of techniques, including but not limited to evaporation (including but not limited to thermal evaporation and / or e-beam evaporation), photolithography, printing (including but not limited to inkjet and / or evaporative jet printing, reel-to-reel printing, and / or microcontact transfer printing), PVD (including but not limited to sputtering), CVD (including but not limited to PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including but not limited to spin coating, dip coating, line coating, and / or spray coating), and / or combinations of any two or more thereof.

[0214] In some non-limiting examples, the barrier coating 1650 may be provided by laminating a preformed barrier film onto the device 100. In some non-limiting examples, the barrier coating 1650 may include a multi-layer coating including at least one of an organic material, an inorganic material, and / or any combination thereof. In some non-limiting examples, the barrier coating 1550 may further include a getter material and / or a desiccant.

[0215] Side In some non-limiting examples, including when OLED device 100 comprises a lighting panel, an entire lateral side of device 100 may correspond to a single lighting element. Thus, the substantially planar cross-sectional profile shown in FIG. 1 may extend substantially along the entire lateral side of device 100 such that photons are emitted from device 100 along substantially its entire lateral extent. In some non-limiting examples, such a single lighting element may be driven by a single drive circuit 300 of device 100.

[0216] In some non-limiting examples, including when OLED device 100 comprises a display module, a lateral aspect of device 100 may be subdivided into a plurality of light-emitting regions 1910 of device 100, where a cross-sectional aspect of device structure 100 within each of light-emitting regions 1910, as shown but not limited to in FIG. 1, emits photons therefrom when energized.

[0217] emission area In some non-limiting examples, the individual emissive regions 1910 of the device 100 may be arranged in a horizontal pattern. In some non-limiting examples, the pattern may extend along a first horizontal direction. In some non-limiting examples, the pattern may also extend along a second horizontal direction, which in some non-limiting examples may be substantially perpendicular to the first horizontal direction. In some non-limiting examples, the pattern may have many elements within such a pattern, with each element being characterized by one or more features thereof, including, but not limited to, the wavelength of light emitted by that emissive region 1910, the shape of such emissive region 1910, the dimensions (along either or both of the first and / or second horizontal directions), the orientation (with respect to either or both of the first and / or second horizontal directions), and / or the spacing from the previous element within the pattern (with respect to either or both of the first and / or second horizontal directions). In some non-limiting examples, the pattern may be repeated in either or both of the first and / or second horizontal directions.

[0218] In some non-limiting examples, each individual light-emitting area 1910 of device 100 is associated with and driven by a corresponding drive circuit 300 in backplane 20 of device 100, where diode 340 corresponds to an OLED structure for the associated light-emitting area 1910. In some non-limiting examples, including but not limited to when light-emitting areas 1910 are arranged in a regular pattern extending in both a first (row) horizontal direction and a second (column) horizontal direction, there can be signal lines 30, 31 in backplane 20 that can be gate lines (or row select) lines 31 corresponding to each row of light-emitting areas 1910 extending in the first horizontal direction, and signal lines 30, 31 that can be data (or column select) lines 30 in some non-limiting examples corresponding to each column of light-emitting areas 1910 extending in the second horizontal direction. In such a non-limiting configuration, the signal on the row select line 31 can energize the gate 312 of each of the switching TFTs 310 electrically coupled thereto, and the signal on the data line 30 can energize the source of each of the switching TFTs 310 electrically coupled thereto, such that the signal on the row select line 31 / data line 30 pair is electrically coupled to and energized by the positive terminal of the power source 15 (represented by the electrical supply line VDD 32), the anode 341 of the OLED structure of the light emitting region 1910 associated with such pair causing emission of photons therefrom, its cathode 342 being electrically coupled to the negative terminal of the power source 15.

[0219] In some non-limiting examples, each light-emitting region 1910 of device 100 corresponds to a single display pixel 340. In some non-limiting examples, each pixel 340 emits light in a given wavelength spectrum. In some non-limiting examples, the wavelength spectrum corresponds to, but is not limited to, a color in the visible light spectrum.

[0220] In some non-limiting examples, each light-emitting region 1910 of device 100 corresponds to a sub-pixel 264x of a display pixel 340. In some non-limiting examples, multiple sub-pixels 264x can be combined to form or represent a single display pixel 340.

[0221] In some non-limiting examples, a single display pixel 340 can be represented by three sub-pixels 2641-2643. In some non-limiting examples, the three sub-pixels 2641-2643 can be displayed as an R (red) sub-pixel 2641, a G (green) sub-pixel 2642, and / or a B (blue) sub-pixel 2643, respectively. In some non-limiting examples, a single display pixel 340 can be represented by four sub-pixels 264x, where three of such sub-pixels 264x can be displayed as R, G, and B sub-pixels 2641-2643, and the fourth sub-pixel 264x can be displayed as a W (white) sub-pixel 264x. In some non-limiting examples, the emission spectrum of light emitted by a given sub-pixel 264x corresponds to the color at which the sub-pixel 264x is displayed. In some non-limiting examples, the wavelengths of light do not correspond to such colors, but further processing is performed to convert the wavelengths to those that do correspond, in a manner apparent to one of ordinary skill in the art.

[0222] Because the wavelengths of the different colored sub-pixels 264x may be different, the optical characteristics of such sub-pixels 264x may be different, especially when a common electrode 120, 140 having a substantially uniform thickness profile is employed for the different colored sub-pixels 264x.

[0223] If a common electrode 120, 140 having a substantially uniform thickness is provided as the second electrode 140 of the device 100, the optical performance of the device 100 cannot be easily fine-tuned according to the emission spectrum associated with each (sub)pixel 340 / 264x. The second electrode 140 used in such an OLED device 100 can be a common electrode 120, 140 covering a plurality of (sub)pixels 340 / 264x in some non-limiting examples. As a non-limiting example, such a common electrode 120, 140 can be a relatively thin conductive layer having a substantially uniform thickness throughout the device 100. Although efforts have been made in some non-limiting examples to adjust the optical microcavity effect associated with the color of each (sub)pixel 340 / 264x by varying the thickness of the organic layers disposed in the different (sub)pixels 340 / 264x, such an approach can provide a significant degree of adjustment of the optical microcavity effect in at least some cases in some non-limiting examples. Additionally, in some non-limiting examples, such schemes may be difficult to implement in an OLED display manufacturing environment.

[0224] As a result, in some non-limiting examples, the presence of optical interfaces created by multiple thin film layers and coatings having different refractive indices, such as may be used to construct optoelectronic devices, including but not limited to OLED device 100, may create different optical microcavity effects for the different color subpixels 264x.

[0225] In device 100, some factors that may affect the microcavity effects observed include, but are not limited to, the total path length (which in some non-limiting examples may correspond to the total thickness of device 100 through which photons emitted therefrom pass before being extracted), and the refractive indices of the various layers and coatings.

[0226] In some non-limiting examples, adjusting the thickness of the electrodes 120, 140 in and across the lateral sides 410 of the light emitting area 1910 of the (sub)pixel 340 / 264x may affect the observable microcavity effect. In some non-limiting examples, such effects may result from changes in the total optical path length.

[0227] In some non-limiting examples, this may be particularly the case when the electrodes 120, 140 are formed with at least one conductive coating 830. In some non-limiting examples, the total optical path length, and concomitantly, the observable optical microcavity effect, may also be tuned by varying the thickness of any layers disposed within a given light-emitting region 1910, including but not limited to the NIC 810, NPC 1120, and / or capping layer (CPL) 3610 (FIG. 36A).

[0228] In some non-limiting examples, optical properties across the lateral sides 410 of the light-emitting region 1910 of the device 100 and / or of the (sub)pixel 340 / 264x that can be altered by adjusting at least one optical microcavity effect include, but are not limited to, the emission spectrum, the intensity (including but not limited to luminosity), and / or the angular distribution of the emitted light, including but not limited to the angular dependence of the brightness and / or color shift of the emitted light.

[0229] In some non-limiting examples, a subpixel 264x is associated with a first set of other subpixels 264x to represent a first display pixel 340, and is also associated with a second set of other subpixels 264x to represent a second display pixel 340, such that the first and second display pixels 340 can have the same subpixel 264x associated with them.

[0230] The pattern and / or organization of the sub-pixels 264x into display pixels 340 continues to evolve, and all current and future patterns and / or organizations are considered to be within the scope of this disclosure.

[0231] Non-emission area In some non-limiting examples, the various light-emitting regions 1910 of the device 100 are substantially surrounded and separated in at least one lateral direction by one or more non-emitting regions 1920, where the structure and / or configuration along a cross-sectional side of the device structure 100, such as but not limited to that shown in FIG. 1, is varied to substantially suppress photons emitted therefrom. In some non-limiting examples, the non-emitting regions 1920 include those regions within a lateral side that are substantially free of the light-emitting regions 1910.

[0232] Thus, as shown in the cross-sectional view of FIG. 4, the lateral topology of various layers of at least one semiconductive layer 130 can be varied to define at least one emitting region 1910 surrounded (at least in one lateral direction) by at least one non-emitting region 1920.

[0233] In some non-limiting examples, an emissive region 1910 corresponding to a single display (sub)pixel 340 / 264x can be understood to have at least one lateral side 410 surrounded laterally by at least one non-emissive region 1920 having a lateral side 420.

[0234] Non-limiting examples of implementations of a cross-sectional side view of device 100 as applied to an emissive region 1910 corresponding to a single display (sub)pixel 340 / 264x of OLED display 100 are now described. Although features of such implementations are shown to be specific to emissive region 1910, one skilled in the art will understand that in some non-limiting examples, two or more emissive regions 1910 may include common features.

[0235] In some non-limiting examples, the first electrode 120 may be disposed on an exposed layer surface 111 of the device 100, in some non-limiting examples within at least a portion of a lateral side 410 of the emissive region 1910. In some non-limiting examples, at least within a lateral side 410 of the emissive region 1910 of the (sub-)pixel 340 / 264x, the exposed layer surface 111 may include the TFT insulating layer 280 of the various TFT structures 200 that, upon deposition of the first electrode 120, constitute the drive circuitry 300 for the emissive region 1910 corresponding to a single display (sub-)pixel 340 / 264x.

[0236] In some non-limiting examples, the TFT insulating layer 280 can have an opening 430 formed therethrough to allow the first electrode 120 to be electrically coupled to one of the TFT electrodes 240, 260, 270, including but not limited to the TFT drain electrode 270, as shown in FIG.

[0237] Those skilled in the art will appreciate that the drive circuit 300 includes multiple TFT structures 200, including but not limited to a switching TFT 310, a drive TFT 320, and / or a storage capacitor 330. While only one TFT structure 200 is shown in FIG. 4 for ease of illustration, those skilled in the art will appreciate that such TFT structure 200 is representative of multiple such TFT structures that make up the drive circuit 300.

[0238] In cross-sectional aspect, the configuration of each emissive region 1910 can be defined, in some non-limiting examples, by the introduction of at least one pixel-defining layer (PDL) 440 substantially across the entire lateral side 420 of the surrounding non-emissive region 1920. In some non-limiting examples, the PDL 440 can include an insulating organic material and / or an insulating inorganic material.

[0239] In some non-limiting examples, the PDL 440 is deposited substantially over the TFT insulating layer 280, although, as shown, in some non-limiting examples, the PDL 440 may also extend over at least a portion of the deposited first electrode 120 and / or its outer edge.

[0240] In some non-limiting examples, as shown in FIG. 4, the cross-sectional thickness and / or profile of the PDL 440 can impart a substantially valley-shaped configuration to the emissive region 1910 of each (sub)pixel 340 / 264x with an area of ​​increased thickness along the boundary between the lateral side 420 of the surrounding non-emissive region 1920 and the lateral side 410 of the surrounded emissive region 1910 corresponding to the (sub)pixel 340 / 264x.

[0241] In some non-limiting examples, the profile of the PDL 440 can have a reduced thickness beyond such a valley-shaped configuration, including, but not limited to, away from the boundary between the lateral side 420 of the surrounding non-emitting region 1920 and the lateral side 410 of the surrounded emitting region 1910, in some non-limiting examples, substantially within the lateral side 420 of such non-emitting region 1920.

[0242] While the PDL 440 is generally shown as having linearly sloping surfaces to form a valley-shaped configuration that defines an enclosed light-emitting area 1910, one skilled in the art will appreciate that in some non-limiting examples, at least one of the shape, aspect ratio, thickness, width, and / or configuration of such a PDL 440 can be varied. As a non-limiting example, the PDL 440 can be formed with steeper or more gently sloping portions. In some non-limiting examples, such a PDL 440 can be configured to extend substantially normal away from the surface on which it is deposited, covering one or more edges of the first electrode 120. In some non-limiting examples, such a PDL 440 can be configured to deposit at least one semiconducting layer 130 thereon by solution processing techniques, including but not limited to by printing, including but not limited to inkjet printing.

[0243] In some non-limiting examples, at least one semiconductive layer 130 may be deposited on an exposed layer surface 111 of device 100, including at least a portion of a lateral side 410 of such light-emitting area 1910 of (sub-)pixel 340 / 264x. In some non-limiting examples, at least within the lateral side 410 of light-emitting area 1910 of (sub-)pixel 340 / 264x, such exposed layer surface 111 may include first electrode 120 upon deposition of at least one semiconductive layer 130 (and / or layers 131, 133, 135, 137, 139 thereof).

[0244] In some non-limiting examples, the at least one semiconductive layer 130 may also extend beyond the lateral sides 410 of the emissive region 1910 of the (sub)pixel 340 / 264x and at least partially into the lateral sides 420 of the surrounding non-emissive region 1920. In some non-limiting examples, such exposed layer surfaces 111 of such surrounding non-emissive region 1920 may include a PDL 440 upon deposition of the at least one semiconductive layer 130.

[0245] In some non-limiting examples, the second electrode 140 may be disposed on an exposed layer surface 111 of the device 100, including at least a portion of a lateral side 410 of the light emitting area 1910 of the (sub)pixel 340 / 264x. In some non-limiting examples, at least within the lateral side 410 of the light emitting area 1910 of the (sub)pixel 340 / 264x, such exposed layer surface 111 may include at least one semiconducting layer 130 upon deposition of the second electrode 130.

[0246] In some non-limiting examples, the second electrode 140 may also extend beyond the lateral sides 410 of the emissive region 1910 of the (sub)pixel 340 / 264x and at least partially into the lateral sides 420 of the surrounding non-emissive region 1920. In some non-limiting examples, such exposed layer surfaces 111 of such surrounding non-emissive regions 1920 may include a PDL 440 upon deposition of the second electrode 140.

[0247] In some non-limiting examples, the second electrode 140 can extend across substantially all or a substantial portion of the lateral side 420 of the surrounding non-emitting region 1920 .

[0248] transparency Because OLED device 100 emits photons through first electrode 120 (in the case of bottom-emitting and / or dual-emitting devices) and either or both of substrate 110 and / or second electrode 140 (in the case of top-emitting and / or dual-emitting devices), it may be desirable in some non-limiting examples to make either or both of first electrode 120 and / or second electrode 140 substantially photon (or light) transmissive ("transmissive"), at least over a substantial portion of a lateral side 410 of light-emitting region 1910 of device 100. In the present disclosure, such transmissive elements, including but not limited to electrodes 120, 140, the materials forming such elements, and / or the properties thereof, may include elements, materials, and / or properties thereof that are, in at least one wavelength band, substantially transmissive in some non-limiting examples ("transparent"), and / or partially transmissive in some non-limiting examples ("semi-transparent").

[0249] Various mechanisms have been employed to impart transmissive properties to the device 100 over at least a substantial portion of the lateral sides 410 of its light-emitting region 1910.

[0250] In some non-limiting examples, including but not limited to when the device 100 is a bottom-emitting device and / or a dual-sided emitting device, the TFT structure 200 of the drive circuit 300 associated with the light-emitting region 1910 of the (sub)pixel 340 / 264x, which can at least partially reduce the transparency of the surrounding substrate 110, is positioned within the lateral side 420 of the surrounding non-light-emitting region 1920 to avoid affecting the transmissive properties of the substrate 110 within the lateral side 410 of the light-emitting region 1910.

[0251] In some non-limiting examples where device 100 is a dual-sided light-emitting device, one of electrodes 120, 140 may be made substantially transparent, including but not limited to, by at least one of the mechanisms disclosed herein, with respect to a lateral side 410 of light-emitting area 1910 of (sub)pixel 340 / 264x, and the other of electrodes 120, 140 may be made substantially transparent, including but not limited to, by at least one of the mechanisms disclosed herein, with respect to a lateral side 410 of adjacent and / or neighboring (sub)pixel 340 / 264x. Thus, in an alternating (sub)pixel 340 / 264x arrangement, the lateral sides 410 of the first light-emitting region 1910 of a (sub)pixel 340 / 264x can be substantially top-emitting, while the lateral sides 410 of the second light-emitting region 1910 of an adjacent (sub)pixel 340 / 264x can be substantially bottom-emitting, such that a subset of the (sub)pixels 340 / 264x are substantially top-emitting and a subset of the (sub)pixels 340 / 264x are substantially bottom-emitting, while only a single electrode 120, 140 of each (sub)pixel 340 / 264x is made substantially transparent.

[0252] In some non-limiting examples, a mechanism for making the electrodes 120, 140 (the first electrode 120 in the case of a bottom-emitting device and / or a dual-sided emitting device, and / or the second electrode 140 in the case of a top-emitting device and / or a dual-sided emitting device) transparent is to form such electrodes 120, 140 of a transparent thin film.

[0253] In some non-limiting examples, the sheet resistance R2 of the conductive coating 830 may generally correspond to the sheet resistance of the conductive coating 380 measured separately from other components, layers, and / or parts of the device 100. In some non-limiting examples, the conductive coating 830 may be formed as a thin film. Thus, in some non-limiting examples, the sheet resistance R3 for the conductive coating 830 may be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance R3 may be less than about 10 Ω / sqr, less than about 5 Ω / sqr, less than about 1 Ω / sqr, less than about 0.5 Ω / sqr, less than 0.2 Ω / sqr, and / or less than about 0.1 Ω / sqr.

[0254] In some non-limiting examples, the conductive coating 830 can include a conductive coating material 831 .

[0255] In some non-limiting examples, the conductive coating material 831 can include a metal having a bond dissociation energy of the conductive coating material 831 less than 300 kJ / mol, less than 200 kJ / mol, less than 165 kJ / mol, less than 150 kJ / mol, less than 100 kJ / mol, less than 50 kJ / mol, and / or less than 20 kJ / mol.

[0256] In some non-limiting examples, the conductive coating material 831 may include an element selected from K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, Zn, Cd, Sn, and / or yttrium (Y). In some non-limiting examples, the element may include K, Na, Li, Ba, Cs, Tb, Ag, Au, Cu, Al, and / or Mg. In some non-limiting examples, the element may include Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Mg, Zn, Cd, and / or Yb. In some non-limiting examples, the element may include Mg, Ag, Al, Yb, and / or Li. In some non-limiting examples, the element may include Mg, Ag, and / or Yb. In some non-limiting examples, the element can include Mg and / or Ag. In some non-limiting examples, the element can be Ag.

[0257] In some non-limiting examples, the conductive coating material 831 may include a pure metal. In some non-limiting examples, the conductive coating 830 is a pure metal. In some non-limiting examples, the conductive coating 830 is pure Ag or substantially pure Ag. In some non-limiting examples, the substantially pure Ag may have a purity of at least about 95%, at least about 99%, at least about 99.9%, at least about 99.99%, at least about 99.999%, and / or at least about 99.9995%. In some non-limiting examples, the conductive coating 830 is pure Mg or substantially pure Mg. In some non-limiting examples, the substantially pure Mg may have a purity of at least about 95%, at least about 99%, at least about 99.9%, at least about 99.9%, at least about 99.99%, at least about 99.999%, and / or at least about 99.9995%.

[0258] In some non-limiting examples, the conductive coating 830 can include an alloy. In some non-limiting examples, the alloy can be an Ag-containing alloy, an Mg-containing alloy, and / or an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy can have an alloy composition that can range from 1:10 (Ag:Mg) to about 10:1 by volume.

[0259] In some non-limiting examples, the conductive coating material 831 may include other metals as a substitute for and / or in combination with Ag. In some non-limiting examples, the conductive coating material 831 may include an alloy of Ag with at least one other metal. In some non-limiting examples, the conductive coating material 831 may include an alloy of Ag with Mg and / or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of about 5% Ag by volume to about 95% Ag by volume, with the remainder being other metals. In some non-limiting examples, the conductive coating material 831 includes Ag and Mg. In some non-limiting examples, the conductive coating material 831 includes a Mg:Ag alloy having a composition of about 1:10 to about 10:1 by volume. In some non-limiting examples, the conductive coating material 831 includes Ag and Yb. In some non-limiting examples, the conductive coating material 831 includes a Yb:Ag alloy having a composition of about 1:20 to about 1:10 by volume. In some non-limiting examples, the conductive coating material 831 includes Mg and Yb. In some non-limiting examples, the conductive coating material 831 includes a Mg:Yb alloy. In some non-limiting examples, the conductive coating material 831 includes Ag, Mg, and Yb. In some non-limiting examples, the conductive coating material 831 includes a Ag:Mg:Yb alloy.

[0260] In some non-limiting examples, the conductive coating 830 may include at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic material may be oxygen (O), sulfur (S), nitrogen (N), and / or carbon (C). Those skilled in the art will appreciate that in some non-limiting examples, such additional elements may be incorporated into the conductive coating 830 as contaminants due to the presence of such additional elements in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the concentration of such additional elements may be limited to be below a threshold concentration. In some non-limiting examples, such additional elements may form compounds with other elements of the conductive coating 830. In some non-limiting examples, the concentration of non-metallic elements in the conductive coating material 831 can be less than about 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and / or about 0.0000001%. In some non-limiting examples, the conductive coating 830 has a composition in which the total amount of O and C therein is less than about 10%, about 5%, about 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and / or about 0.0000001%.

[0261] It has now been somewhat unexpectedly discovered that reducing the concentration of certain non-metallic elements in the conductive coating 830 can facilitate the selected deposition of the conductive coating 830. Without wishing to be bound by any particular theory, it can be hypothesized, by way of non-limiting example, that certain non-metallic elements, such as O and / or C, when present in the vapor flux of the conductive coating 830 and / or in the deposition chamber and / or environment, can be deposited on the surface of the NIC 810 to act as nucleation sites for the metallic elements of the conductive coating 830. It can be hypothesized that reducing the concentration of such non-metallic elements that can act as nucleation sites can facilitate reducing the amount of conductive coating material 831 deposited on the exposed layer surface 111 of the NIC 810.

[0262] In some non-limiting examples, the conductive coating 830 and the metallic coating 138 can include a common metal. In some non-limiting examples, the conductive coating material 831 and the metallic coating material have the same composition.

[0263] In some non-limiting examples, the conductive coating 830 may include multiple layers of conductive coating material 831. In some non-limiting examples, the conductive coating material 831 of a first layer of the multiple layers may be different from the conductive coating material 831 of a second layer of the multiple layers. In some non-limiting examples, the conductive coating 830 may include a multi-layer coating. In some non-limiting examples, such a multi-layer coating may include Yb / Ag, Yb / Mg, Yb / Mg:Ag, Yb / Yb:Ag, Yb / Ag / Mg, and / or Yb / Mg / Ag.

[0264] In some non-limiting examples, particularly in the case of such conductive thin films, the relatively thin layer thicknesses can be up to substantially tens of nm, so as to contribute enhanced transmissive qualities for use in OLED device 100, but also favorable optical properties, including, but not limited to, reduced microcavity effects.

[0265] In some non-limiting examples, such thin conductive films can include intermediate-stage thin films.

[0266] In some non-limiting examples, reducing the thickness of the electrodes 120, 140 to promote transparency qualities may be accompanied by an increase in the sheet resistance of the electrodes 120, 140.

[0267] In some non-limiting examples, a device 100 having at least one electrode 120, 140 with a high sheet resistance creates a large current resistance (IR) drop when coupled to a power supply 15 during operation. In some non-limiting examples, such IR drop can be compensated for to some extent by increasing the level (VDD) of the power supply 15. However, in some non-limiting examples, increasing the level of the power supply 15 for at least one (sub)pixel 340 / 264x to compensate for the IR drop due to the high sheet resistance may require increasing the level of the voltage supplied to other components to maintain effective operation of the device 100.

[0268] In some non-limiting examples, auxiliary electrodes 1750 and / or busbar structures 4150 can be formed on the device 100 to reduce the electrical supply demands of the device 100 (by employing at least one thin film layer of any combination of TCO, metal thin film, and / or metal alloy thin film) without significantly affecting the ability of the electrodes 120, 140 to be substantially transparent, allowing for more effective transport of current to various emission regions of the device 100 while simultaneously reducing the sheet resistance of the transparent electrodes 120, 140 and its associated IR drop.

[0269] In some non-limiting examples, the sheet resistance specification of the common electrodes 120, 140 of an AMOLED display device 100 may vary according to many parameters, including, but not limited to, the (panel) size of the device 100 and / or the tolerance for voltage variation across the device 100. In some non-limiting examples, as panel size increases, the sheet resistance specification may increase (i.e., a lower sheet resistance is specified). In some non-limiting examples, as the tolerance for voltage variation decreases, the sheet resistance specification may increase.

[0270] In some non-limiting examples, sheet resistance specifications can be used to derive example thicknesses of auxiliary electrode 1750 and / or busbar 4150 to comply with such specifications for various panel sizes. In one non-limiting example, an aperture ratio of 0.64 was assumed for all display panel sizes, and auxiliary electrode 1750 thicknesses for various example panel sizes were calculated for voltage tolerances of 0.1V and 0.2V, for example, in Table 1 below. [Table 1]

[0271] As a non-limiting example, for a top-emitting device, the second electrode 140 may be made transparent. On the other hand, in some non-limiting examples, such auxiliary electrodes 1750 and / or bus bars 4150 may not be substantially transparent, but may be electrically coupled to the second electrode 140, including but not limited to by depositing a conductive coating 830 therebetween, to reduce the effective sheet resistance of the second electrode 140.

[0272] In some non-limiting examples, such auxiliary electrodes 1750 may be positioned and / or shaped on either or both of the lateral and / or cross-sectional sides so as not to interfere with the emission of photons from the lateral sides 410 of the light-emitting area 1910 of the (sub)pixel 340 / 264x.

[0273] In some non-limiting examples, a mechanism for fabricating the first electrode 120 and / or the second electrode 140 is to form such electrodes 120, 140 in a pattern over at least a portion of the lateral side 410 of its emissive region 1910 and / or, in some non-limiting examples, over at least a portion of the lateral side 420 of the non-emissive region 1920 that surrounds them. In some non-limiting examples, such a mechanism can be employed to form the auxiliary electrodes 1750 and / or busbars 4150 in a position and / or shape on either or both of the lateral and / or cross-sectional sides so as not to interfere with the emission of photons from the lateral side 410 of the emissive region 1910 of the (sub)pixel 340 / 264x, as discussed above.

[0274] In some non-limiting examples, the device 100 may be configured to be substantially free of conductive oxide material in the optical path of photons emitted by the device 100. As a non-limiting example, at least one of the layers and / or coatings deposited after the at least one semiconductive layer 130, including but not limited to the second electrode 140, the NIC 810, and / or any other layers and / or coatings deposited thereon, at the lateral side 410 of at least one light-emitting region 1910 corresponding to the (sub)pixel 340 / 264x, may be substantially free of conductive oxide material. In some non-limiting examples, the substantial absence of conductive oxide material may reduce absorption and / or reflection of light emitted by the device 100. As a non-limiting example, conductive oxide materials, including but not limited to ITO and / or IZO, may absorb light in at least the B (blue) region of the visible spectrum, which may generally reduce the efficiency and / or performance of the device 100.

[0275] In some non-limiting examples, combinations of these and / or other mechanisms may be employed.

[0276] Additionally, in some non-limiting examples, in addition to making one or more of the first electrode 120, the second electrode 140, the auxiliary electrode 1750, and / or the bus bar 4150 substantially transparent at least over a substantial portion of the lateral side 410 of the emissive region 1910 corresponding to the (sub)pixel 340 / 264x of the device 100, it may be desirable to make at least one of the lateral sides 420 of the surrounding non-emissive region 1920 of the device 100 substantially transparent in both the bottom and top directions to make the device 100 substantially transparent to light incident on its external surface such that a significant portion of such external incident light can transmit through the device 100 in addition to the emission of photons generated internally within the device 100 (in top-emission, bottom-emission, and / or dual-sided emission) to allow photons to be substantially emitted over that lateral side 410, as disclosed herein.

[0277] Conductive Coating In this disclosure, the terms "conductive coating" and "electrode coating" may be used interchangeably to refer to similar concepts and references herein to conductive coating 830 in the context of being patterned by selective deposition of NIC 810 and / or NPC 1120, and in some non-limiting examples may be applicable to electrode coating 830 in the context of being patterned by selective deposition of patterning coatings 810, 1120. In some non-limiting examples, references to electrode coating 830 may refer to a coating having a particular composition as described herein. Similarly, in this disclosure, the terms "conductive coating material" and "electrode coating material" may be used interchangeably to refer to similar concepts and references herein to conductive coating material 831.

[0278] In some non-limiting examples, the conductive coating material 831 (FIG. 9) used to deposit the conductive coating 830 on the exposed layer surface 111 of the base material can be a substantially pure element. In some further non-limiting examples, the conductive coating 830 includes a substantially pure element. In some other non-limiting examples, the conductive coating 830 includes two or more elements, which may be provided, for example, as an alloy or mixture.

[0279] In some non-limiting examples, at least one component of such mixture may not be deposited on such surface, may not be deposited on such exposed layer surface 111 during deposition, and / or may be deposited in a small amount relative to the amount of the remaining components of such mixture that are deposited on such exposed layer surface 111.

[0280] In some non-limiting examples, such at least one component of such a mixture can have a property relative to the remaining components to selectively deposit substantially only the remaining components, in some non-limiting examples, this property can be vapor pressure.

[0281] In some non-limiting examples, such at least one component of such a mixture may have a lower vapor pressure relative to the remaining components.

[0282] In some non-limiting examples, the conductive coating material 831 can be a copper (Cu)-magnesium (Cu-Mg) mixture, where Cu has a lower vapor pressure than Mg.

[0283] In some non-limiting examples, the conductive coating material 831 used to deposit the conductive coating material 830 on the exposed layer surface 111 can be substantially pure.

[0284] In some non-limiting examples, the conductive coating material 831 used to deposit the Mg includes, in some non-limiting examples, substantially pure Mg. In some non-limiting examples, the substantially pure Mg may exhibit substantially similar properties to pure Mg. In some non-limiting examples, the purity of the Mg may be about 95% or more, about 98% or more, about 99% or more, about 99.9% or more, and 99.99% or more.

[0285] In some non-limiting examples, the conductive coating 830 of the optoelectronic device according to various examples includes Mg. In some non-limiting examples, the conductive coating 830 includes substantially pure Mg. In some non-limiting examples, the conductive coating 830 includes other metals as a substitute for and / or in combination with Mg. In some non-limiting examples, the conductive coating 830 includes an alloy of Mg with one or more other metals. In some non-limiting examples, the conductive coating 830 includes an alloy of Mg with Yb, Cd, Zn, and / or Ag. In some non-limiting examples, such an alloy may be a binary alloy having a composition ranging from about 5% Mg by volume to about 95% Mg by volume, with the remainder being the other metal. In some non-limiting examples, the conductive coating 830 includes a Mg:Ag alloy having a composition ranging from about 1:10 to about 10:1 by volume.

[0286] In some non-limiting examples, the conductive coating 830 and / or conductive coating material 831 in the optoelectronic devices according to various examples includes Ag. In some non-limiting examples, the conductive coating 830 and / or conductive coating material 831 includes substantially pure Ag. In some non-limiting examples, the conductive coating 830 and / or conductive coating material 831 includes other metals as a substitute for and / or in combination with Ag. In some non-limiting examples, the conductive coating 830 and / or conductive coating material 831 includes an alloy of Ag with one or more other metals. In some non-limiting examples, the conductive coating 830 and / or conductive coating material 831 includes an alloy of Ag with Mg, Yb, and / or Zn. In some non-limiting examples, such an alloy may be a binary alloy having a composition of about 5% Ag by volume to about 95% Ag by volume, with the remainder being other metals. In some non-limiting examples, the conductive coating 830 and / or conductive coating material 831 includes Ag and Mg. Non-limiting examples of such conductive coatings 830 and / or conductive coating materials 831 include Mg:Ag alloys having a composition of about 1:10 to about 10:1 by volume. In some non-limiting examples, conductive coatings 830 and / or conductive coating materials 831 include Ag and Yb. Non-limiting examples of such conductive coatings 830 include Yb:Ag alloys having a composition of about 1:20 to about 10:1 by volume. In some non-limiting examples, conductive coatings 830 include Mg and Yb, for example, as an Mg:Yb alloy. In some non-limiting examples, conductive coatings 830 and / or conductive coating materials 831 include Ag, Mg, and Yb, for example, as an Ag:Mg:Yb alloy.

[0287] In some non-limiting examples, the conductive coating 830 includes two or more layers having different compositions. In some non-limiting examples, the two or more layers of the conductive coating 830 include different elements. Non-limiting examples of such conductive coatings 830 include multi-layer coatings formed with Yb / Ag, Yb / Mg, Yb / Mg:Ag, Mg / Ag, Yb / Yb:Ag, Yb / Ag / Mg, and / or Yb / Mg / Ag.

[0288] Patterning As a result of the foregoing, it may be desirable to selectively deposit device features, including but not limited to at least one of the first electrode 120, second electrode 140, auxiliary electrode 1750, and / or bus bar 4150, and / or conductive elements electrically coupled thereto, in a pattern on the exposed layer surface 111 of the front plane 10 layer of the device 100 across the lateral sides 410 of the emissive region 1910 of the (sub)pixel 340 / 264x and / or the lateral sides 420 of the non-emissive region 1920 surrounding the emissive region 1910. In some non-limiting examples, the first electrode 120, second electrode 140, auxiliary electrode 1750, and / or bus bar 4150 may be deposited on at least one of the plurality of conductive coatings 830.

[0289] However, to achieve such patterning of the conductive coating 830, employing a shadow mask such as an FMM, which in some non-limiting examples can be used to form relatively small features having feature sizes on the order of tens of microns or less, may not be feasible for the following reasons in some non-limiting examples: FMMs may deform during deposition processes, especially at high temperatures, such as those that may be employed for the deposition of thin conductive films; limitations in the mechanical strength (including but not limited to tensile strength) and / or shadowing effects of FMMs, especially in high temperature deposition processes, may impose constraints on the aspect ratios of features that may be achievable using such FMMs; By way of non-limiting example, each portion of the FMM may be physically supported such that some patterns may not be achievable in a single processing step, including, by way of non-limiting example, where the pattern specifies an isolated feature, thereby constraining the types and number of patterns that may be achievable using such FMMs; The FMM may exhibit a tendency to warp during high temperature deposition processes, which in some non-limiting examples may distort the shape and position of the apertures in the FMM, which may alter the selective deposition pattern and reduce performance and / or yield; FMMs that can be used to generate repeating structures that span the entire surface of the device 100 may require a large number of apertures to be formed in the FMM, which may compromise the structural integrity of the FMM; Repeated use of the FMM in successive depositions, especially in metal deposition processes, may cause the deposited material to adhere to it, which may obscure the features of the FMM, which may alter the selective deposition pattern and reduce performance and / or yield; FMMs may be periodically cleaned to remove bonded non-metallic materials, but such cleaning procedures may not be suitable for use with bonded metals, and even so, in some non-limiting examples, may be time-consuming and / or expensive; and · Regardless of any such cleaning process, continued use of such FMMs, especially in high temperature deposition processes, may be wasteful in producing the desired patterning and may result in them being discarded and / or replaced in a complex and costly process.

[0290] FIG. 5 shows an example of a cross-sectional view of a device 500 that is substantially similar to device 100, but further includes multiple raised PDLs 440 spanning the lateral sides 420 of a non-emissive region 1920 that surround the lateral sides 410 of an emissive region 1910 corresponding to (sub)pixel 340 / 264x.

[0291] When the conductive coating 830 is deposited using an open mask deposition process and / or a mask-free deposition process, in some non-limiting examples, the conductive coating 830 is deposited over the lateral sides 410 of the emissive regions 1910 corresponding to the (sub)pixels 340 / 264x to form the second electrodes 140 thereon (in the figures), as well as over the lateral sides 420 of the non-emissive regions 1920 surrounding them to form areas of the conductive coating 830 on the top surface of the PDL 440. To ensure that each (segment) of the second electrodes 140 is not electrically coupled to any of the at least one conductive regions 830, the thickness of the PDL 440 is thicker than the thickness of the second electrodes 140. In some non-limiting examples, the PDL 440 can be provided with an undercut profile, as shown in the figures, to further reduce the possibility that any (segment) of the second electrodes 140 is electrically coupled to any of the at least one conductive regions 830.

[0292] In some non-limiting examples, application of the barrier coating 1650 onto the device 500 may result in poor adhesion of the barrier coating 1650 to the device 500 given the highly uneven surface morphology of the device 500.

[0293] In some non-limiting examples, it may be desirable to tailor optical microcavity effects associated with subpixels 264x of different colors (and / or wavelengths) by varying the thickness of at least one semiconducting material 130 (and / or layers thereof) across a lateral side 410 of light-emitting region 1910 corresponding to one color subpixel 264x relative to a lateral side 410 of light-emitting region 1910 corresponding to subpixel 264x of another color. In some non-limiting examples, the use of an FMM to perform the patterning may not provide the precision required to provide such optical microcavity modulation effects, at least in some cases, and / or in some non-limiting examples, in a production environment for OLED display 100.

[0294] Nucleation-inhibiting and / or nucleation-promoting material properties In some non-limiting examples, the conductive coating 830, which may be employed as at least one of multiple layers of conductive thin films to form device features including, but not limited to, at least one of the first electrode 120, the first electrode 140, the auxiliary electrode 1750, and / or the bus bar 4150, and / or conductive elements electrically coupled thereto, may exhibit a relatively low affinity for being deposited on the exposed layer surface 111 of the base material, thereby inhibiting deposition of the conductive coating 830.

[0295] The relative affinity or lack thereof of materials and / or their properties for having a conductive coating 830 deposited thereon may be referred to as being "nucleation promoting" or "nucleation inhibiting," respectively.

[0296] In this disclosure, "nucleation-inhibiting" refers to coatings, materials, and / or layers thereof that have surfaces that exhibit a relatively low affinity for (the deposition of) the conductive coating 830 thereon, such that the deposition of the conductive coating 830 on such surfaces is inhibited.

[0297] In this disclosure, "nucleation promoting" refers to a coating, material, and / or layer thereof that has a surface that exhibits a relatively high affinity for deposition of the conductive coating 830 onto such a surface, thereby facilitating deposition of the conductive coating 830 onto such a surface.

[0298] The term "nucleation" in these terms refers to the nucleation stage of the thin film formation process where monimers in the gas phase condense onto a surface to form nuclei.

[0299] Without wishing to be bound by a particular theory, it is believed that the shape and size of such nuclei and their subsequent growth into islands and then into thin films may depend on many factors, including, but not limited to, the interfacial tension between the vapor, the surface, and / or the condensed film nuclei.

[0300] In the present disclosure, such affinity can be measured in a number of ways.

[0301] One measure of the nucleation-inhibiting and / or nucleation-promoting properties of a surface is the initial sticking probability S of the surface for a given conductive material, including but not limited to Mg. 0 In this disclosure, the terms "sticking probability" and "sticking coefficient" may be used interchangeably.

[0302] In some non-limiting examples, the sticking probability S may be given by:

number

[0303] As the density of the islands increases (e.g., the average film thickness increases), the sticking probability S may change. As a non-limiting example, a low initial sticking probability S 0may increase as the average film thickness increases. This can be understood based on the difference in sticking probability S between an area of ​​a surface without islands, as a non-limiting example a bare substrate 110, and an area with a high density of islands. As a non-limiting example, a monomer impinging on the surface of an island may have a sticking probability S close to 1.

[0304] Therefore, the initial sticking probability S 0 can be specified as the sticking probability S of a surface before any significant number of critical nuclei are formed. The initial sticking probability S 0 One measure of the sticking probability S of a surface can involve the sticking probability S of a material during the initial stages of deposition of the material, where the average thickness of the deposited material across the surface is at or below a threshold value. In the illustration of some non-limiting examples, the initial sticking probability S 0 The threshold for can be specified as 1 nm, as a non-limiting example. Then, the average sticking probability

number

number

[0305] Based on the energy profiles 610, 620, 630 shown in FIG. 6, the relatively low activation energy for desorption (E des 631), and / or the relatively high activation energy for surface diffusion (E s It can be envisioned that NIC810 material exhibiting a thermal conductivity of 631) may be particularly advantageous for use in a variety of applications.

[0306] One measure of the nucleation-inhibiting or nucleation-promoting properties of a surface is the initial deposition rate of a given conductive material, including but not limited to Mg, on a surface relative to the initial deposition rate of the same conductive material on a reference surface, both surfaces being exposed and / or exposed to an evaporation flux of the conductive material.

[0307] Selective coatings to affect nucleation-inhibiting and / or nucleation-promoting material properties In some non-limiting examples, one or more selective coatings 710 (FIG. 7) may be selectively deposited on at least a first portion 701 (FIG. 7) of the exposed layer surface 111 of the base material presented for deposition thereon of the thin film conductive coating 830. Such selective coatings 710 have different nucleation inhibiting properties (and / or conversely, nucleation promoting properties) with respect to the conductive coating 830 than those of the exposed layer surface 111 of the base material. In some non-limiting examples, there may be a second portion 702 (FIG. 7) of the exposed layer surface 111 of the base material on which such selective coatings 710 are not deposited.

[0308] Such selective coating 710 may be NIC 810, and / or a nucleation promoting coating (NPC 1120 (FIG. 11)).

[0309] In some non-limiting examples, the NIC 810 may be disposed on the exposed layer surface 111 of an underlying metal coating 138, as shown as a non-limiting example in FIG. 35. Those skilled in the art will appreciate that such a conductive coating 138 may be (at least) one of multiple layers of the device 100. The metal coating 138 may be comprised of a metal coating material. Those skilled in the art will appreciate that the metal coating 138 and the metal coating material comprising it may exhibit substantially similar optical and / or other properties, particularly when disposed as a film and under substantially similar conditions and / or by substantially similar mechanisms as those employed in depositing the second electrode 140.

[0310] In some non-limiting examples, sheet resistance is a property of a component, layer, and / or part that may change the characteristics of the current passing through such component, layer, and / or part. In some non-limiting examples, the sheet resistance R1 of the metal coating 138 may generally correspond to the sheet resistance of the metal coating 138 measured separately from other components, layers, and / or parts of the device 100. In some non-limiting examples, the metal coating 138 may be formed as a thin film. Thus, in some non-limiting examples, the sheet resistance R1 for the metal coating 138 may be determined and / or calculated based on the composition, thickness, and / or morphology of such a thin film. In some non-limiting examples, the sheet resistance R1 may be about 0.1-1,000 Ω / sqr, about 1-100 Ω / sqr, about 2-50 Ω / sqr, about 3-30 Ω / sqr, about 4-20 Ω / sqr, about 5-15 Ω / sqr, and / or about 10-12 Ω / sqr.

[0311] In some non-limiting examples, the bond dissociation energy of a metal may correspond to the standard state enthalpy change measured at 298 K from breaking a bond of a diatomic molecule formed by two identical atoms of the metal. The bond dissociation energy may be determined based on known literature, including, but not limited to, Luo, Yu-ran, "Bond dissociation energies" (2010), as a non-limiting example. In some non-limiting examples, the metal coating material may include a metal having a bond dissociation energy of at least 10 kJ / mol, at least 50 kJ / mol, at least 100 kJ / mol, at least 150 kJ / mol, at least 180 kJ / mol, and / or at least 200 kJ / mol.

[0312] In some non-limiting examples, the metal coating material can include a metal having an electronegativity of less than about 1.4, about 1.3, and / or about 1.2.

[0313] In some non-limiting examples, the metal coating material may include an element selected from potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), ytterbium (Yb), silver (Ag), gold (Au), copper (Cu), aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), and / or tungsten (W). In some non-limiting examples, the element may include Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Mg, Zn, Cd, and / or Yb. In some non-limiting examples, the element may include Sn, Ni, Ti, Pd, Cr, Fe, and / or Co. In some non-limiting examples, the element may include Zr, Pt, V, Nb, Ir, and / or Os. In some non-limiting examples, the element may include Ta, Mo, and / or W. In some non-limiting examples, the element may include Mg, Ag, Al, Yb, and / or Li. In some non-limiting examples, the element may include Mg, Ag, and / or Yb. In some non-limiting examples, the element may include Mg and / or Ag. In some non-limiting examples, the element may be Ag.

[0314] In some non-limiting examples, the metal coating material may include a pure metal. In some non-limiting examples, the metal coating material is a pure metal. In some non-limiting examples, the metal coating material is pure Ag or substantially pure Ag. In some non-limiting examples, the metal coating material is pure Mg or substantially pure Mg. In some non-limiting examples, the metal coating material is pure Al or substantially pure Al.

[0315] In some non-limiting examples, the metallic coating material can include an alloy, hi some non-limiting examples, the alloy can be an Ag-containing alloy and / or an AgMg-containing alloy.

[0316] In some non-limiting examples, the metallic coating material may include other metals as a substitute for and / or in combination with Ag. In some non-limiting examples, the metallic coating material may include an alloy of Ag with at least one other metal. In some non-limiting examples, the metallic coating material may include an alloy of Ag with Mg and / or Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition of about 5% Ag by volume to about 95% Ag by volume, with the remainder being other metals. In some non-limiting examples, the metallic coating material includes Ag and Mg. In some non-limiting examples, the metallic coating material includes a Mg:Ag alloy having a composition of about 1:10 to about 10:1 by volume. In some non-limiting examples, the metallic coating material includes Ag and Yb. In some non-limiting examples, the metallic coating material includes a Yb:Ag alloy having a composition of about 1:20 to about 1:10 to about 1:10 by volume. In some non-limiting examples, the metallic coating material includes Mg and Yb. In some non-limiting examples, the metallic coating material includes a Mg:Yb alloy. In some non-limiting examples, the metallic coating material includes Ag, Mg, and Yb. In some non-limiting examples, the metallic coating material includes a Ag:Mg:Yb alloy.

[0317] In some non-limiting examples, the metal coating material may include oxygen (O). In some non-limiting examples, the metal coating material may include at least one metal and O. In some non-limiting examples, the metal coating material may include a metal oxide. In some non-limiting examples, the metal oxide may include Zn, indium (I), tin (Sn), antimony (Sb), and / or gallium (Ga). In some non-limiting examples, the metal oxide may be a transparent conductive oxide (TCO). In some non-limiting examples, the TCO may include indium oxide, tin oxide, antimony oxide, and / or gallium oxide. In some non-limiting examples, the TCO may include indium titanium oxide (ITO), ZnO, indium zinc oxide (IZO), and / or indium gallium zinc oxide (IGZO). In some non-limiting examples, the TCO may be electrically doped with other elements.

[0318] In some non-limiting examples, the metallic coating 138 may be formed from a metal and / or a metal alloy.

[0319] In some non-limiting examples, the metallic coating 138 can include at least one metal or metal alloy and at least one metal oxide.

[0320] In some non-limiting examples, the metal coating 138 may include multiple layers of metal coating material. In some non-limiting examples, the metal coating material of a first layer of the multiple layers may be different from the metal coating material of a second layer of the multiple layers. In some non-limiting examples, the metal coating material of a first layer of the multiple layers may include a metal and the metal coating material of a second layer of the multiple layers may include a metal oxide.

[0321] In some non-limiting examples, the metallic coating material of at least one of the layers can include Yb. In some non-limiting examples, the metallic coating material of one of the layers can include an Ag-containing alloy and / or an AgMg-containing alloy, and / or pure Ag, substantially pure Ag, pure Mg, and / or substantially pure Mg. In some non-limiting examples, the metallic coating 138 is a bilayer Yb / AgMg coating.

[0322] In some non-limiting examples, a first layer of the layers proximal to the NIC 810 (top) may include an element selected from Ag, Au, Cu, Al, Sn, Ni, Ti, Pd, Cr, Fe, Co, Zr, Pt, V, Nb, Ir, Os, Ta, Mo, and / or W. In some non-limiting examples, the element may include Cu, Ag, and / or Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include Sn, Ti, Pd, Cr, Fe, and / or Co. In some non-limiting examples, the element may include Ni, Zr, Pt, V, Nb, Ir, and / or Os. In some non-limiting examples, the element may include Ta, Mo, and / or W. In some non-limiting examples, the element may include Mg, Ag, and / or Al. In some non-limiting examples, the element can include Mg and / or Ag. In some non-limiting examples, the element can be Ag.

[0323] In some non-limiting examples, the metal coating 138 may include at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic material may be oxygen (O), sulfur (S), nitrogen (N), and / or carbon (C). Those skilled in the art will appreciate that in some non-limiting examples, such additional elements may be incorporated into the metal coating 138 as contaminants due to the presence of such additional elements in the source material, the equipment used for deposition, and / or the vacuum chamber environment. In some non-limiting examples, the concentration of such additional elements may be limited to be below a threshold concentration. In some non-limiting examples, such additional elements may form compounds with other elements of the metal coating 138. In some non-limiting examples, the concentration of the non-metallic element in the conductive coating material may be less than about 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and / or about 0.0000001%. In some non-limiting examples, the conductive coating 830 has a composition in which the total amount of O and C therein is less than about 10%, about 5%, about 1%, about 0.1%, about 0.001%, about 0.0001%, about 0.00001%, about 0.000001%, and / or about 0.0000001%. In some non-limiting examples, the metal coating 138 can include a closed coating 4530. In some non-limiting examples, the metal coating 138 can include a discontinuous coating 1050.

[0324] In some non-limiting examples, the metal coating 138 may be disposed in a pattern that may be defined by at least one region therein that is substantially free of the closed coating 4530 of the metal coating 138 on the first layer surface in the first portion 115. In some non-limiting examples, the at least one region has the metal patterning NIC 810 disposed thereon. In some non-limiting examples, the at least one region may separate the metal coating 138 into a plurality of individual fragments thereof. In some non-limiting examples, at least two of such a plurality of individual fragments of the metal coating 138 may be electrically coupled. In some non-limiting examples, at least two of such a plurality of individual fragments of the metal coating 138 may each be electrically coupled to a common conductive layer or coating, including but not limited to the conductive coating 830, to enable the flow of electrical current therebetween. In some non-limiting examples, at least two of such a plurality of individual fragments of the metal coating 138 may be electrically insulated from one another.

[0325] In this disclosure, in some non-limiting examples, when the context dictates, the terms "NIC" and "patterning coating" may be used interchangeably to refer to similar concepts, and a reference herein to NIC 810 in the context of being selectively deposited to pattern conductive coating 830 may, in some non-limiting examples, be applicable to patterning coating 810 in the context of its selective deposition to pattern electrode coating 830.

[0326] Similarly, in some non-limiting examples, when the context dictates, the terms "NPC" and "patterning coating" may be used interchangeably to refer to similar concepts, and a reference herein to NPC 1120 in the context of being selectively deposited to pattern conductive coating 830 may, in some non-limiting examples, be applicable to patterning coating 1120 in the context of its selective deposition to pattern electrode coating 830.

[0327] In some non-limiting examples, references to patterned coatings 810, 1120 can refer to coatings having a particular composition as described herein.

[0328] Those skilled in the art will appreciate that the use of such selective coating 710 can, in some non-limiting examples, facilitate and / or allow for selective deposition of conductive coating 830 without employing an FMM in the step of depositing conductive coating 830.

[0329] In some non-limiting examples, such selective deposition of conductive coating 830 can be a pattern. In some non-limiting examples, such a pattern can facilitate providing and / or increasing transparency of at least one of the top and / or bottom surfaces of device 100 within lateral sides 410 of one or more emissive regions 1910 of (sub)pixel 340 / 264x and / or within lateral sides 420 of one or more non-emissive regions 1920 that can surround such emissive regions 1910.

[0330] In some non-limiting examples, a conductive coating 830 can be deposited on a conductive structure and / or form a layer of the device 100, which in some non-limiting examples can be the first electrode 120 and / or the second electrode 140 acting as one of the anode 341 and / or cathode 342, and / or the auxiliary electrode 1750 and / or bus bar 4150 to support its electrical conductivity and / or electrically coupled thereto, in some non-limiting examples.

[0331] In some non-limiting examples, the NIC 810 of a given conductive coating 830, including but not limited to Mg, has a relatively low initial sticking probability S for the conductive coating 830 (in the example, Mg) in vapor form such that deposition of the conductive coating 830 (in the example, Mg) on ​​the exposed layer surface 111 is inhibited. 0 Thus, in some non-limiting examples, selective deposition of NIC 810 may refer to a coating having a surface exhibiting an initial sticking probability S of exposed layer surface 111 (of NIC 810) presented for depositing conductive coating 830 on exposed layer surface 111. 0 can be reduced.

[0332] In some non-limiting examples, the NPC 1120 of a given conductive coating 830, including but not limited to Mg, may provide a relatively high initial sticking probability S for the conductive coating 830 in vapor form to facilitate deposition of the conductive coating 830 onto the exposed layer surface 111. 0 Thus, in some non-limiting examples, the selective deposition of the NPC 1120 may refer to a coating having an exposed layer surface 111 exhibiting an initial sticking probability S 0 may be increased.

[0333] When the selective coating 710 is NIC 810, the first portion 701 of the exposed layer surface 111 of the base material onto which the NIC 810 is deposited will then present a treated surface (of the NIC 810) with increased nucleation-inhibiting properties, or alternatively reduced nucleation-promoting properties, such that it has a reduced affinity for deposition of the conductive coating 830 thereon relative to the affinity of the exposed layer surface 111 of the base material onto which the NIC 810 was deposited. In contrast, the second portion 702 onto which no such NIC 810 is deposited will continue to present an exposed layer surface 111 (of the base substrate 110) with an affinity for deposition of the conductive coating 830 thereon whose nucleation-inhibiting properties, or alternatively nucleation-promoting properties, are substantially unchanged (in either case, the exposed layer surface 111 of the base substrate 110 substantially free of the selective coating 710).

[0334] When the selective coating 710 is NPC 1120, the first portion 701 of the exposed layer surface 111 of the base material on which the NPC 1120 is deposited will then present a treated surface (of the NPC 1120) (in either case, the surface of the NPC 1120 deposited on the first portion 701) with reduced nucleation-inhibiting properties or, alternatively, increased nucleation-promoting properties, so as to have an increased affinity for the deposition of the conductive coating 830 thereon relative to the affinity of the exposed layer surface 111 of the base material on which the NPC 1120 was deposited. In contrast, the second portion 702 on which such NPC 1120 is not deposited will continue to present an exposed layer surface 111 (of the base substrate 110) (in either case, the exposed layer surface 111 of the base substrate 110 substantially free of NPC 1120) with an affinity for the deposition of the conductive coating 830 thereon with the nucleation-inhibiting properties or, alternatively, the nucleation-promoting properties substantially unchanged.

[0335] In some non-limiting examples, both NIC 810 and NPC 1120 can be selectively deposited on respective first portions 701 and NPC portions 1103 (FIG. 11A) of exposed layer surface 111 of base material to respectively modify the nucleation-inhibiting properties (and / or conversely, the nucleation-promoting properties) of exposed layer surface 111 as presented for depositing conductive coating 830 thereon. In some non-limiting examples, there may be a second portion 702 of exposed layer surface 111 of base material on which selective coating 710 is not deposited, such that the nucleation-inhibiting properties (and / or conversely, the nucleation-promoting properties) of exposed layer surface 111 are not substantially modified as presented for depositing conductive coating 830 thereon.

[0336] In some non-limiting examples, the first portion 701 and the NPC portion 1103 may overlap such that a first coating of NIC 810 and / or NPC 1120 can be selectively deposited on the exposed layer surface 111 of the base material in such overlapping areas, and a second coating of NIC 810 and / or NPC 1120 can be selectively deposited on the treated exposed layer surface 111 of the first coating. In some non-limiting examples, the first coating is NIC 810. In some non-limiting examples, the first coating is NPC 1120.

[0337] In some non-limiting examples, the first portion 701 (and / or NPC portion 1103) on which the selective coating 710 is deposited can include a removal area where the deposited selective coating 710 has been removed, presenting an uncoated surface of the base material for depositing the conductive coating 830 thereon such that its nucleation-inhibiting properties (and / or conversely, its nucleation-promoting properties) are not substantially altered as presented for depositing the conductive coating 830 thereon.

[0338] In some non-limiting examples, the base material may be at least one layer selected from the substrate 110, and / or at least one of the front plane 10 layers, including but not limited to the first electrode 120, the second electrode 140, the at least one semi-conductive layer 130 (and / or at least one of the layers), and / or any combination of any of these.

[0339] In some non-limiting examples, the conductive coating 830 can have specific material properties. In some non-limiting examples, the conductive coating 830 can include Mg, either alone or in compounds and / or alloys.

[0340] As a non-limiting example, pure and / or substantially pure Mg may not be readily deposited on some organic surfaces due to the low sticking probability S of Mg on some organic surfaces.

[0341] Selective Coating Deposition In some non-limiting examples, thin films including selective coating 710 may be selectively deposited and / or processed using a variety of techniques including, but not limited to, evaporation (including, but not limited to, thermal evaporation and / or e-beam evaporation), photolithography, printing (including, but not limited to, inkjet and / or evaporative jet printing, reel-to-reel printing, and / or microcontact transfer printing), PVD (including, but not limited to, sputtering), CVD (including, but not limited to, PECVD and / or OVPD), laser annealing, LITI patterning, ALD, coating (including, but not limited to, spin coating, dip coating, line coating, and / or spray coating), and / or combinations of any two or more thereof.

[0342] FIG. 7 is an example schematic diagram illustrating a non-limiting example of an evaporation process, generally designated 700, in a chamber 70 for selectively depositing a selective coating 710 on a first portion 701 of an exposed layer surface 111 of a base material (shown here only as substrate 110 for ease of illustration).

[0343] In process 700, a quantity of selective coating material 711 is heated under vacuum to evaporate and / or sublimate 712 the selective coating material 711. In some non-limiting examples, the selective coating material 711 comprises entirely and / or substantially the material used to form the selective coating 710. The evaporated selective coating material 712 is directed through chamber 70, including in the direction indicated by arrow 71, toward exposed layer surface 111. As the evaporated selective coating material 712 impinges on exposed layer surface 111, i.e., within first portion 701, selective coating 710 is formed thereon.

[0344] In some non-limiting examples, as shown in the figures for process 700, selective coating 710 may be selectively deposited only on a portion of exposed layer surface 111, first portion 701 in the illustrated example, by inserting a shadow mask 715, which in some non-limiting examples may be an FMM, between the selective coating material 711 and exposed layer surface 111. Shadow mask 715 has at least one aperture 716 extending therethrough such that a portion of evaporated selective coating material 712 passes through aperture 716 and is incident on exposed layer surface 111 to form selective coating 710. If evaporated selective coating material 712 does not pass through aperture 716 and is incident on surface 717 of shadow mask 715, it is prevented from being disposed on exposed layer surface 111 to form selective coating 710 in second portion 703. Thus, second portion 702 of exposed layer surface 111 is substantially free of selective coating 710. In some non-limiting examples (not shown), the selective coating material 711 incident on the shadow mask 715 may be deposited on its surface 717 .

[0345] Thus, a patterned surface is generated upon completion of deposition of selective coating 710.

[0346] In some non-limiting examples, for ease of illustration, the selective coating 710 employed in FIG. 7 may be NIC 810. In some non-limiting examples, for ease of illustration, the selective coating 710 employed in FIG.

[0347] 8 is an example schematic diagram illustrating non-limiting examples of the results of an evaporation process, generally indicated at 800, in a chamber 70 for selectively depositing a conductive coating 830 on a second portion 702 of an exposed layer surface 111 of a base material (in the figures, for ease of illustration, only substrate 110) that is substantially free of NIC 810 selectively deposited on a first portion 701, including but not limited to by evaporation process 700 of FIG. 7. In some non-limiting examples, the second portion 702 includes that portion of the exposed layer surface 111 that is located beyond the first portion 701.

[0348] Once the NIC 810 has been deposited on a first portion 701 of the exposed layer surface 111 of the base material (shown as substrate 110), a conductive coating 830 may be deposited on a second portion 702 of the exposed layer surface 111 that is substantially free of the NIC 810.

[0349] In process 800, a quantity of conductive coating material 831 is heated under vacuum to evaporate and / or sublimate 832 the conductive coating 831. In some non-limiting examples, the conductive coating material 831 comprises entirely and / or substantially the material used to form the conductive coating 830. The evaporated conductive coating material 832 is directed inside the chamber 70, including in the direction indicated by arrow 81, toward the exposed layer surface 111 of the first portion 701 and the second portion 702. As the evaporated conductive coating material 832 is incident on the second portion 702 of the exposed layer surface 111, the conductive coating 830 is formed thereon.

[0350] In some non-limiting examples, deposition of the conductive coating material 831 can be performed using an open mask deposition process and / or a mask-free deposition process such that the conductive coating 830 is formed substantially over the entire exposed layer surface 111 of the base material (shown as substrate 110) to produce a treated surface (of the conductive coating 830).

[0351] As will be appreciated by those skilled in the art, the size of the features of the open mask, as opposed to the size of the FMM, is generally comparable to the size of the device 100 being manufactured. In some non-limiting examples, such an open mask may have an opening that may generally correspond to the size of the device 100, which may correspond to, but is not limited to, about 1 inch for a microdisplay, about 4-6 inches for a mobile display, and / or about 8-17 inches for a laptop and / or tablet display, in some non-limiting examples, to mask the edges of such device 100 during manufacturing. In some non-limiting examples, the size of the features of the open mask may be on the order of about 1 cm or more. In some non-limiting examples, the apertures formed in the open mask may be sized to encompass the lateral sides 410 of the multiple emissive regions 1910, each corresponding to a (sub)pixel 340 / 264x, and / or the surrounding and / or lateral sides 420 of the surrounding and / or intervening non-emissive regions 1920.

[0352] Those skilled in the art will appreciate that in some non-limiting examples, the use of an open mask may be omitted if desired. In some non-limiting examples, the open mask deposition processes described herein may alternatively be performed without the use of an open mask, such that the entire target exposed layer surface 111 is exposed.

[0353] In some non-limiting examples, as shown in the figures for process 800, deposition of conductive coating 830 can be performed using an open mask deposition process and / or a mask-free deposition process such that conductive coating 830 is formed substantially over the entire exposed layer surface 111 of the base material (in the figure, of substrate 110) to produce a treated surface (of conductive coating 830).

[0354] In fact, as shown in FIG. 8, evaporated conductive coating material 832 is incident on both the exposed layer surface 111 of the NIC 810 over the first portion 701 and the exposed layer surface 111 of the substrate 110 over the second portion 702 that is substantially free of NIC 810.

[0355] The exposed layer surface 111 of the NIC 810 in the first portion 701 has a relatively low initial adhesion probability S 0 8, the conductive coating 830 is deposited substantially selectively only on the exposed layer surface 111 of the substrate 110 in the second portion 702 that is substantially free of the NIC 810. In contrast, evaporated conductive coating material 832 incident on the exposed layer surface 111 of the NIC 810 over the first portion 701 tends not to be deposited as shown (833), and the exposed layer surface 111 of the NIC 810 over the first portion 701 is substantially free of the conductive coating 830. Although not shown in FIG. 8, in some non-limiting examples, the exposed layer surface 111 of the NIC 810 over the first portion 701 is substantially free of the conductive coating 830 material, but this exposed layer surface 111 does not become a coating film of the conductive coating 830. Rather, as will be discussed in more detail later below, the exposed layer surface 111 of the NIC 810 may have a discontinuous coating of the conductive coating 830 material deposited thereon and / or an intermediate conductive thin film.

[0356] In some non-limiting examples, the initial deposition rate of evaporated conductive coating material 832 on the exposed layer surface 111 of the substrate 110 in the second portion 702 may be at least about 200 times and / or more, at least about 550 times and / or more, at least about 900 times and / or more, at least about 1,000 times and / or more, at least about 1,500 times and / or more, at least about 1,900 times and / or more, and / or about 2,000 times and / or more than the initial deposition rate of evaporated conductive coating material 832 on the exposed layer surface 111 of the NIC 810 in the first portion 701.

[0357] The foregoing can be combined to provide selective deposition of at least one conductive coating 830 to form device features including, but not limited to, patterned electrodes 120, 140, 1750, 4150, and / or conductive elements electrically coupled thereto, without employing FMM within the conductive coating 830 deposition process. In some non-limiting examples, such patterning can allow and / or enhance transparency of the device 100.

[0358] In some non-limiting examples, the selective coating 710, which may be the NIC 810 and / or the NPC 1120, may be applied multiple times during the manufacturing process of the device 100 to pattern device features including multiple electrodes 120, 140, 1750, 4150, and / or various layers thereof, and / or a conductive coating 830 electrically coupled thereto.

[0359] 9A-9D show non-limiting examples of open masks.

[0360] 9A illustrates a non-limiting example of an open mask 900 having and / or defining an aperture 910 formed therein. In some non-limiting examples as shown, the aperture 910 of the open mask 900 is smaller than the size of the device 100, such that when the mask 900 is overlaid on the device 100, the mask 900 covers the edges of the device 100. In some non-limiting examples, as shown, the lateral sides 410 of the light-emitting regions 1910 corresponding to all and / or substantially all of the (sub)pixels 340 / 264x of the device 100 are exposed through the aperture 910, while the unexposed regions 920 are formed between the outer edge 91 of the device 100 and the aperture 910. In some non-limiting examples, electrical contacts and / or other components (not shown) of the device 100 can be positioned in such unexposed regions 920, such that these components remain substantially unaffected throughout the open mask deposition process, as will be understood by those skilled in the art.

[0361] 9B shows a non-limiting example of an open mask 901 having and / or defining an aperture 911 formed therein that is smaller than the aperture 910 of FIG. 9A such that when the mask 901 is overlaid on the device 100, the mask 901 covers at least the lateral sides 410a of the light-emitting regions 1910 corresponding to at least some of the (sub)pixels 340 / 264x. As shown, in some non-limiting examples, the lateral sides 410a of the light-emitting regions 1910 corresponding to the outermost (sub)pixels 340 / 264x are positioned within the non-exposed regions 913 of the device 100 formed between the outer edge 91 of the device 100 and the aperture 911 and are masked during the open mask deposition process to inhibit evaporated conductive coating material 832 from impinging on the non-exposed regions 913.

[0362] 9C illustrates a non-limiting example of an open mask 902 having and / or defining apertures 912 formed therein that define a pattern that covers lateral sides 410a of light-emitting regions 1910 corresponding to at least some (sub)pixels 340 / 264x while exposing lateral sides 410b of light-emitting regions 1910 corresponding to at least some (sub)pixels 340 / 264x. As illustrated, in some non-limiting examples, lateral sides 410a of light-emitting regions 1910 corresponding to at least some (sub)pixels 340 / 264x positioned within non-exposed regions 914 of device 100 are masked during the open mask deposition process to inhibit evaporated conductive coating material 830 from impinging on non-exposed regions 914.

[0363] In Figures 9B-9C, as illustrated, the lateral sides 410a of the emissive regions 1910 corresponding to at least some of the outermost (sub)pixels 340 / 264x are masked, however, one skilled in the art will understand that in some non-limiting examples, the apertures of the open masks 900-902 may be shaped to mask the lateral sides 410 of other emissive regions 1910 and / or the lateral sides 420 of non-emissive regions 1920 of the device 100.

[0364] Additionally, although Figures 9A-9C show open masks 900-902 having a single aperture 910-912, one skilled in the art will understand that such open masks 900-902 may, in some non-limiting examples (not shown), have additional apertures (not shown) for exposing multiple areas of the exposed layer surface 111 of the base material of the device 100.

[0365] 9D illustrates a non-limiting example of an open mask 903 having and / or defining a plurality of apertures 917a-917d. The apertures 917a-917d are positioned such that, in some non-limiting examples, they can selectively expose certain regions 921 of the device 100 while masking other regions 922. In some non-limiting examples, the lateral sides 410b of certain light-emitting regions 1910 corresponding to at least some of the (sub)pixels 340 / 264x are exposed through the apertures 917a-917d in the region 921, while the lateral sides 410a of other light-emitting regions 1910 corresponding to at least one of the (sub)pixels 340 / 264x are located in the region 922 and are therefore masked.

[0366]

[0041] Referring now to Figure 10A, there is shown an example of a version 1000 of the device 100 shown in Figure 1 but having a number of additional deposition steps as described herein.

[0367] Device 1000 illustrates a lateral profile of exposed layer surface 111 of a base material. The lateral profile includes a first portion 1001 and a second portion 1002. In first portion 1001, NICs 810 are disposed on exposed layer surface 111. However, in second portion 1002, exposed layer surface 111 is substantially free of NICs 810.

[0368] In some non-limiting examples, the first portion 1001 and the second portion 1002 are substantially adjacent to one another on a lateral side.

[0369] In some non-limiting examples, the exposed layer surface 1001 of the first portion 1001 and the exposed layer surface 111 of the second portion 1002 are substantially proximate to one another in a cross-sectional side. In other words, although there may be one or more intervening layers between the exposed layer surface 111 of the first portion 1001 and the exposed layer surface 111 of the second portion 1002, the difference therebetween caused thereby is, in some non-limiting examples, only a fraction of the lateral extent of at least one of the first portion 1001 and the second portion 1002.

[0370] After selective deposition of the NIC 810 over the first portion 1001, a conductive coating 830 is deposited on the device 1000 using, in some non-limiting examples, an open mask deposition process and / or a mask-free deposition process.

[0371] The NIC 810 detects in the first portion 1001 an initial adhesion probability S 0 A relatively low initial adhesion probability S for the conductive coating 830 that is substantially lower than 0 To provide a surface having

[0372] Thus, the conductive coating 830 is formed as a closed film within the second portion 1002 while the first portion 1001 is substantially free of the conductive coating 830 .

[0373] In this manner, the NIC 810 may be selectively deposited, including using a shadow mask, to allow the conductive coating 830 to be deposited, including but not limited to, using an open mask deposition process and / or a mask-free deposition process, to form device features including, but not limited to, at least one of the first electrode 120, the second electrode 140, the auxiliary electrode 1750, the bus bar 4150, and / or at least one layer thereof, and / or conductive elements electrically coupled thereto.

[0374] 10B, an example 1010 of an example version of device 1000 is shown.

[0375] In contrast to device 1000 in FIG. 10A, which shows first portion 1001 substantially free of conductive coating 830, device 1010 shows first portion 1001 substantially free of closed film 4530 of conductive coating 830. In FIG. 10B, the presence of NIC 810 in first portion 1001 causes conductive coating material 831 to be deposited as a discontinuous coating 1050 on exposed layer surface 1011 of NIC 810 in first portion 1001. In some non-limiting examples, discontinuous coating 1050 includes a plurality of individual islands. In some non-limiting examples, at least some of the islands are disconnected from one another. In other words, in some non-limiting examples, discontinuous coating 1050 may include features that are physically separated from one another such that discontinuous coating 1050 does not form a continuous layer.

[0376] In this manner, the NIC 810 may be selectively deposited, including using a shadow mask, to allow the conductive coating 830 to be deposited, including but not limited to, using an open mask deposition process and / or a mask-free deposition process, to form device features including, but not limited to, at least one of the first electrode 120, the second electrode 140, the auxiliary electrode 1750, the bus bar 4150, and / or at least one layer thereof, and / or conductive elements electrically coupled thereto.

[0377] Without wishing to be limited to any particular theory, it is assumed that during deposition of the conductive coating 830, some vapor monomers of the conductive coating material 831 that impinge on the exposed layer surface 1011 of the NIC 810 may condense to form small clusters and / or islands thereon. However, substantial growth of such clusters or islands, if left unhindered, may lead to the possible formation of a substantially closed film 4530 of the conductive coating material 831 on the exposed layer surface 1011 of the NIC 810, which is inhibited by one or more properties and / or characteristics of the NIC 810. Thus, in some non-limiting examples, the discontinuous coating 1050 includes the conductive coating material 831 to form the conductive coating 830. In some non-limiting examples, the peak absorption wavelength of the discontinuous coating 1050 may be less than the peak wavelength of the photons emitted and / or transmitted by the device 1020. As non-limiting examples, the discontinuous coating 1050 may exhibit peak absorption at wavelengths less than about 470 nm, less than about 460 nm, less than about 455 nm, less than about 450 nm, less than about 445 nm, less than about 440 nm, less than about 430 nm, less than about 420 nm, and / or less than about 400 nm.

[0378] In some non-limiting examples, a discontinuous coating 1050 containing clusters and / or islands can be disposed on and / or in physical contact with and / or in close proximity to the NIC 810.

[0379] FIG. 10C is a simplified plan view example of a first portion 1001 of a device 1010 according to the non-limiting example of FIG. 10B.

[0380] 10D, an example of a simplified version 1020 of the device 1020 shown in FIG. 10B is shown, depicting a third portion 1003 disposed between the first portion 1001 and the second portion 1002 at a lateral side of the device 1020. Although not shown as such, in some non-limiting examples, the third portion 1003 may be considered to be a portion of the first portion 1001 representing its tip and / or interface with the second portion 1002. In some non-limiting examples, the third portion 1003 includes a conductive coating 830 covering at least a portion of the exposed layer surface 1011 of the base material, which in some non-limiting examples may include NIC 810 in the third portion 1003 and the first portion 1001. In some non-limiting examples, the thickness of the conductive coating 830 in the third portion 1003 may be less than the thickness of the conductive coating 830 in the second portion 1002. Although not specifically shown in FIG. 10C, the thickness of the NIC 810 in the third portion 1003 may be less than the thickness of the NIC 810 in the first portion 1001.

[0381] In some non-limiting examples, the conductive coating 830 in the third portion 1003 includes at least one protrusion and / or at least one depression in a lateral side of the device 1020. In some non-limiting examples, the conductive coating 830 in the third portion 1003 may include an intermediate stage coating having a plurality of apertures, including, but not limited to, in some non-limiting examples, pinholes, crevices, and / or cracks.

[0382] 10E is an example of a simplified plan view of a portion of the device 1020 showing a third portion 1003 disposed between (a portion of the first portion 1001 and a portion of the second portion 1002). In some non-limiting examples, the conductive coating 830 within the third portion 1003, and in some non-limiting examples, penetrating the first portion 1001, may include at least one dendrite 1021 that, in some non-limiting examples, may extend laterally toward and / or at least partially penetrate into the adjacent first portion 1001. The at least one dendrite 1021 coats an exposed layer surface 1011 of the base material, which in some non-limiting examples may be a NIC 810. In some non-limiting examples, at least a portion of the exposed layer surface 1011 of the base material, which in some non-limiting examples may be NIC 810, may be free of the conductive coating 830 that extends into the third portion 1003, and in some non-limiting examples, into the second portion 1002, and in some non-limiting examples may include at least one dendritic depression 1022 that may extend laterally toward and / or at least partially into the adjacent second portion 1002.

[0383] Without wishing to be bound by any particular theory, it may be assumed that at least one protrusion, including but not limited to at least one dendrite 1021, and / or at least one depression, including but not limited to at least one dendritic depression, may form at and / or near the NIC 810 and / or due to at least one localized non-uniformity in at least one property and / or characteristic of the NIC 810. As a non-limiting example, at least one localized area of ​​the NIC 810 may exhibit variations in the critical surface tension of its thin film coating, physical discontinuities therein, and / or domain boundaries thereof. In some non-limiting examples, such variations may form between adjacent crystallites, selectively depositing the conductive coating material 831, thus resulting in at least one protrusion and / or at least one depression. In some non-limiting examples, at least one dendrite 1021 may include at least one feature formed by the union of at least one island and / or cluster of the discontinuous coating 1050 with at least one other island and / or cluster of the discontinuous coating 1050 and / or with the conductive coating 830.

[0384] In some non-limiting examples, the third portion 1003 can include at least one area that is substantially free of conductive coating material 831, including, but not limited to, a gap in the discontinuous coating 1050, a gap between at least one feature of the at least one dendrite 1021 and / or at least one feature of the at least one dendritic depression 1022. In some non-limiting examples, the surface coverage of the conductive coating material 831 in the third portion 1003 can be from about 30% to about 90%, and / or from about 40% to about 80%, in some non-limiting examples.

[0385] Thus, the first portion 1001 is substantially free of the conductive coating 830 .

[0386] In this manner, the NIC 810 may be selectively deposited, including using a shadow mask, to allow the conductive coating 830 to be deposited, including but not limited to, using an open mask deposition process and / or a mask-free deposition process, to form device features including, but not limited to, at least one of the first electrode 120, the second electrode 140, the auxiliary electrode 1750, the bus bar 4150, and / or at least one layer thereof, and / or conductive elements electrically coupled thereto.

[0387] 11A-11B show a non-limiting example of an evaporation process generally designated 1100 in a chamber 70 for selectively depositing a conductive coating 830 on a second portion 702 of an exposed layer surface 111 of a base material (in the figures, for ease of illustration, only the substrate 110) that is substantially free of the NIC 810 selectively deposited on the first portion 701, and on the NPC portion 1103 of the first portion 701 on which the NIC 810 has been deposited, including but not limited to by the evaporation process 700 of FIG.

[0388] 11A illustrates stage 1101 of process 1100, in which NIC 810 is deposited on a first portion 701 of an exposed layer surface 111 of a base material (in the figure, substrate 110), and NPC 1120 may be deposited on NPC portion 1103 of the exposed layer surface 111 of the NIC 810 deposited on the substrate 110 in first portion 701. In the figure, as a non-limiting example, NPC portion 1103 extends completely into first portion 701.

[0389] In stage 1101, a quantity of NPC material 1121 is heated under vacuum to evaporate and / or sublimate 1122 the NPC material 1121. In some non-limiting examples, the NPC material 1121 comprises entirely and / or substantially the material used to form the NPC 1120. The evaporated NPC material 1122 is directed through the chamber 70 toward the first portion 701 and the exposed layer surface 111 of the NPC portion 1103, including in the direction indicated by arrow 1110. As the evaporated NPC material 1122 impinges on the NPC portion 1103 of the exposed layer surface 111, the NPC 1120 is formed thereon.

[0390] In some non-limiting examples, deposition of the NPC material 1121 can be performed using open mask deposition techniques and / or mask-free deposition techniques, such that the NPC 1120 is formed substantially across the entire exposed layer surface 111 of the base material (which in the figure may be the NIC 810 across the first portion 701 and / or the substrate 110 through the second portion 702) to produce a treated surface (of the NPC 1120).

[0391] In some non-limiting examples, as shown in the figures for stage 1101, NPC 1120 may be selectively deposited in part, in the illustrated example only on NPC portion 1103 of exposed layer surface 111 (of NIC 810 in the figures), by inserting a shadow mask 1125, which in some non-limiting examples may be an FMM, between NPC material 1121 and exposed layer surface 111. Shadow mask 1125 has at least one aperture 1126 extending therethrough such that a portion of evaporated NPC material 1122 passes through aperture 1126 and impinges on exposed layer surface 111 (of only NIC 810 in NPC portion 1103 in the figures, as a non-limiting example) to form NPC 1120. If evaporated NPC material 1122 does not pass through aperture 1126 and is incident on surface 1127 of shadow mask 1125, it is prevented from being disposed on exposed layer surface 111 to form NPC 1120. Thus, portion 1102 of exposed layer surface 111 located beyond NPC portion 1103 is substantially free of NPC 1120. In some non-limiting examples (not shown), evaporated NPC material 1122 incident on shadow mask 1125 may be deposited on its surface 1127.

[0392] The exposed layer surface 111 of the NIC 810 in the first portion 701 has a relatively low initial adhesion probability S 0 However, in some non-limiting examples, this may not necessarily be the case for NPC coating 1120, such that NPC coating 1120 is still selectively deposited on exposed layer surfaces (in the figure, of NIC 810) within NPC portion 1103.

[0393] Thus, a patterned surface is generated upon completion of deposition of NPC 1120.

[0394] FIG. 11B illustrates stage 1104 of process 1100, in which NIC 810 is deposited on a first portion 701 of an exposed layer surface 111 of a base material (shown as substrate 110) and NPC 1120 is deposited on NPC portion 1103 of exposed layer surface 111 (shown as of NIC 810), after which a conductive coating 830 can be deposited on NPC portion 1103 and second portion 702 of exposed layer surface 111 (shown as substrate 110).

[0395] In step 1104, a quantity of conductive coating material 831 is heated under vacuum to evaporate and / or sublimate 832 the conductive coating 831. In some non-limiting examples, the conductive coating material 831 comprises entirely and / or substantially the material used to form the conductive coating 830. The evaporated conductive coating material 832 is directed through the chamber 70 toward the exposed layer surfaces 111 of the first and second portions 701 and 702 of the NPC portion 1103, including in the direction indicated by arrow 1120. When the evaporated conductive coating material 832 impinges on the NPC portion 1103 of the exposed layer surface 111 (of the NPC 1120) and the second portion 702 of the exposed layer surface 111 (of the substrate 110), i.e., other than the exposed layer surface 111 of the NIC 810, the conductive coating 830 is formed thereon.

[0396] In some non-limiting examples, as shown in the figure for step 1104, deposition of the conductive coating 830 can be performed using an open mask deposition process and / or a mask-free deposition process such that the conductive coating 830 is formed substantially over the entire exposed layer surface 111 of the base material (other than when the base material is NIC 810) to produce a treated surface (of the conductive coating 830).

[0397] Indeed, as shown in FIG. 11B , the evaporated conductive coating material 832 is incident on both the exposed layer surface 111 of the NIC 810 over the first portion 701 located beyond the NPC portion 1103, as well as the exposed layer surface 111 of the NPC 1120 over the NPC portion 1103 and the exposed layer surface 111 of the substrate 110 over the second portion 702 that is substantially free of NIC 810.

[0398] The exposed layer surface 111 of the NIC 810 in the first portion 701 located beyond the NPC portion 1103 has a relatively low initial adhesion probability S 0 , and / or that the exposed layer surface 111 of the NPC 1120 in the NPC portion 1103 has a relatively high initial adhesion probability S 0 11, conductive coating 830 is deposited substantially selectively only on exposed layer surface 111 of substrate 110 in NPC portion 1103 and second portion 702 that is substantially free of NIC 810. In contrast, evaporated conductive coating material 832 incident on exposed layer surface 111 of NIC 810 over first portion 701 located beyond NPC portion 1103 tends not to be deposited as shown (1123), such that exposed layer surface 111 of NIC 810 over first portion 701 located beyond NPC portion 1103 is substantially free of conductive coating 830.

[0399] Thus, a patterned surface is created upon completion of deposition of conductive coating 830.

[0400] 12A-12C show a non-limiting example of an evaporation process, generally indicated at 1200, in chamber 70 for selectively depositing a conductive coating 830 on a second portion 1202 (FIG. 12C) of an exposed layer surface 111 of a base material.

[0401] 12A illustrates stage 1201 of process 1200, in which a quantity of NPC material 1121 is heated under vacuum to evaporate and / or sublimate 1122 the NPC material 1121. In some non-limiting examples, the NPC material 1121 comprises entirely and / or substantially the material used to form the NPC 1120. The evaporated NPC material 1122 is directed through chamber 70, including in the direction indicated by arrow 1210, toward exposed layer surface 111 (shown as substrate 110).

[0402] In some non-limiting examples, deposition of the NPC material 1121 can be performed using an open mask deposition process and / or a mask-free deposition process such that the NPC 1120 is formed substantially across the entire exposed layer surface 111 of the base material (in the figure, the substrate 110) to produce a treated surface (of the NPC 1120).

[0403] In some non-limiting examples, as shown in the figure for stage 1201, the NPC 1120 may be selectively deposited in part, in the example shown, only on the NPC portion 1103 of the exposed layer surface 111, by inserting a shadow mask 1125, which in some non-limiting examples may be an FMM, between the NPC material 1121 and the exposed layer surface 111. The shadow mask 1125 has at least one aperture 1126 extending therethrough such that a portion of the evaporated NPC material 1122 passes through the aperture 1126 and is incident on the exposed layer surface 111 to form the NPC 1120 in the NPC portion 1103. If the evaporated NPC material 1122 does not pass through the aperture 1126 and is incident on a surface 1127 of the shadow mask 1125, it is prevented from being disposed on the exposed layer surface 111 to form the NPC 1120 in the portion 1102 of the exposed layer surface 111 located beyond the NPC portion 1103. Thus, portion 1102 is substantially free of NPC 1120. In some non-limiting examples (not shown), NPC material 1121 incident on shadow mask 1125 may be deposited on surface 1127 thereof.

[0404] When evaporated NPC material 1122 impinges on exposed layer surface 111, ie, within NPC portion 1103, NPC 1120 is formed thereon.

[0405] Thus, a patterned surface is generated upon completion of deposition of NPC 1120.

[0406] 12B illustrates stage 1202 of process 1200, in which once NPC 1120 has been deposited on NPC portion 1103 of exposed layer surface 111 of a base material (shown as substrate 110), NIC 810 may be deposited on a first portion 701 of exposed layer surface 111. In the illustration, by way of non-limiting example, first portion 701 extends completely into NPC portion 1103. As a result, in the illustration, by way of non-limiting example, portion 1102 includes that portion of exposed layer surface 111 that lies beyond first portion 701.

[0407] In stage 1202, a quantity of NIC material 1211 is heated under vacuum to evaporate and / or sublimate 1212 the NIC material 1211. In some non-limiting examples, the NIC material 1121 comprises entirely and / or substantially the material used to form the NIC 810. The evaporated NIC material 1212 is directed through the chamber 70, including in the direction indicated by arrow 1220, toward the first portion 701 of the NPC portion 1103 that extends beyond the first portion 701, and toward the exposed layer surface 111 of portion 1102. As the evaporated NIC material 1212 impinges on the first portion 701 of the exposed layer surface 111, the NIC 810 is formed thereon.

[0408] In some non-limiting examples, deposition of the NIC material 1211 can be performed using an open mask deposition process and / or a mask-free deposition process such that the NIC 810 is formed substantially across the entire exposed layer surface 111 of the base material to produce a treated surface (of the NIC 810).

[0409] In some non-limiting examples, as shown in the figures for stage 1202, the NIC 810 may be selectively deposited, in part, on only a first portion 701 of the exposed layer surface 111 (in the illustrated example, of NPC 1120) by inserting a shadow mask 1215, which in some non-limiting examples may be an FMM, between the NIC material 1211 and the exposed layer surface 111. The shadow mask 1215 has at least one aperture 1216 extending therethrough such that a portion of the evaporated NIC material 1212 passes through the aperture 1216 and is incident on the exposed layer surface 111 (in the illustrated example, of NPC 1120) to form the NIC 810. If the evaporated NIC material 1212 does not pass through the aperture 1216 and is incident on a surface 1217 of the shadow mask 1215, it is prevented from being disposed on the exposed layer surface 111 to form the NIC 810 in a second portion 702 beyond the first portion 701. Thus, the second portion 702 of the exposed layer surface 111 located beyond the first portion 701 is substantially free of NIC 810. In some non-limiting examples (not shown), evaporated NIC material 1212 incident on the shadow mask 1215 may be deposited on its surface 1217.

[0410] The exposed layer surface 111 of the NPC 1120 in the NPC portion 1103 has a relatively high initial adhesion probability S 0 , in some non-limiting examples, this may not necessarily be the case for NIC coating 810. Nonetheless, in some non-limiting examples, such affinity for NIC coating 810 may allow NIC coating 810 to still be selectively deposited on exposed layer surface 111 (of NPC 1120 in the figure) in first portion 701.

[0411] Thus, a patterned surface is generated upon completion of deposition of the NIC 810.

[0412] FIG. 12C illustrates stage 1204 of process 1200, in which once NIC 810 has been deposited on a first portion 701 of exposed layer surface 111 of a base material (shown as NPC 1120), a conductive coating 830 may be deposited on a second portion 702 of exposed layer surface 111 (shown as of substrate 110 over portion 1102 beyond NPC portion 1103, and of NPC 1120 over NPC portion 1103 over first portion 701).

[0413] In step 1204, a quantity of conductive coating material 831 is heated under vacuum to evaporate and / or sublimate 832 the conductive coating 831. In some non-limiting examples, the conductive coating material 831 comprises entirely and / or substantially the material used to form the conductive coating 830. The evaporated conductive coating material 832 is directed through the chamber 70 toward the first portion 701 of the NPC portion 1103 and the exposed layer surface 111 of the portion 1102 beyond the NPC portion 1103, including in the direction indicated by arrow 1230. When the evaporated conductive coating material 832 impinges on the NPC portion 1103 of the exposed layer surface 111 (of the NPC 1120) beyond the first portion 701 and the portion 1102 of the exposed layer surface 111 (of the substrate 110) beyond the NPC portion 1103, i.e., the second portion 702 other than the exposed layer surface 111 of the NIC 810, the conductive coating 830 is formed thereon.

[0414] In some non-limiting examples, as shown in the figure for step 1204, deposition of the conductive coating 830 can be performed using an open mask deposition process and / or a mask-free deposition process such that the conductive coating 830 is formed substantially over the entire exposed layer surface 111 of the base material (other than when the base material is NIC 810) to produce a treated surface (of the conductive coating 830).

[0415] Indeed, as shown in FIG. 12C , the evaporated conductive coating material 832 is incident on both the exposed layer surface 111 of the NIC 810 over the first portion 701 located within the NPC portion 1103, as well as the exposed layer surface 111 of the NPC 1120 over the NPC portion 1103 located beyond the first portion 701 and the exposed layer surface 111 of the substrate 110 over the portion 1102 located beyond the NPC portion 1103.

[0416] The exposed layer surface 111 of the NIC 810 in the first portion 701 has a relatively low initial adhesion probability S 0 , and / or that the exposed layer surface 111 of the NPC 1120 in the NPC portion 1103 located beyond the first portion 701 has a relatively high initial adhesion probability S 0 12, conductive coating 830 is deposited substantially selectively only on exposed layer surface 111 of substrate 110 in NPC portion 1103 located beyond first portion 701 that is substantially free of NIC 810, and on portion 1102 located beyond NPC portion 1103. In contrast, evaporated conductive coating material 832 incident on exposed layer surface 111 of NIC 810 over first portion 701 tends not to be deposited as shown (1233), such that exposed layer surface 111 of NIC 810 over first portion 701 is substantially free of conductive coating 830.

[0417] Thus, a patterned surface is created upon completion of deposition of conductive coating 830.

[0418] In some non-limiting examples, the initial deposition rate of evaporated conductive coating material 832 on the exposed layer surface 111 in the second portion 702 may be at least about 200 times and / or more, at least about 550 times and / or more, at least about 900 times and / or more, at least about 1,000 times and / or more, at least about 1,500 times and / or more, at least about 1,900 times and / or more, and / or about 2,000 times and / or more than the initial deposition rate of evaporated conductive coating material 832 on the exposed layer surface 111 of the NIC 810 in the first portion 701.

[0419] 13A-13C show non-limiting examples of a printing process, generally indicated at 1300, for selectively depositing a selective coating 710, which in some non-limiting examples may be NIC810 and / or NPC1120, onto an exposed layer surface 111 of a base material (shown here only as substrate 110 for ease of illustration).

[0420] 13A illustrates a stage in process 1300 in which a stamp 1310 having protrusions 1311 thereon is provided with a selective coating 710 on an exposed layer surface 1312 of the protrusions 1311. Those skilled in the art will appreciate that the selective coating 710 may be deposited and / or deposited on the protrusion surface 1312 using a variety of suitable mechanisms.

[0421] FIG. 13B illustrates a stage of process 1300 in which stamp 1310 is brought into close proximity 1301 with exposed layer surface 111 such that selective coating 710 contacts and adheres to exposed layer surface 111 .

[0422] FIG. 13C illustrates a stage in the process 1300 where the stamp 1310 is moved 1303 away from the exposed layer surface 111 leaving the selective coating 710 deposited on the exposed layer surface 111 .

[0423] Selective Deposition of Patterned Electrodes The foregoing can be combined to provide selective deposition of at least one conductive coating 830 to form a patterned electrode 120, 140, 1750, 4150, which in some non-limiting examples may be a second electrode 140 and / or an auxiliary electrode 1750, without employing FMM within the high temperature conductive coating 830 deposition process. In some non-limiting examples, such patterning can allow and / or enhance transparency of the device 100.

[0424] 14 shows an example of a patterned electrode 1400 in plan view, illustrated as a second electrode 140 suitable for use in example version 1500 of device 100 (FIG. 15). Electrode 1400 is formed with a pattern 1410 that includes a single continuous structure having or defining a plurality of patterned apertures 1420 therein, where the apertures 1420 correspond to areas of device 100 where cathode 342 is absent.

[0425] In the figure, as a non-limiting example, pattern 1410 is disposed over the entire lateral extent of device 1500, without distinguishing between lateral sides 410 of emissive regions 1910 corresponding to (sub)pixel 340 / 264x and lateral sides 420 of non-emissive regions 1920 surrounding such emissive regions 1910. The example shown can thus correspond to a device 1500 that is substantially transparent to light incident on an external surface of device 1500, as disclosed herein, such that a significant portion of such externally incident light can be transmitted through device 1500 in addition to photon emissions generated internally within device 1500 (in top-emitting, bottom-emitting, and / or dual-sided emission).

[0426] The transparency of the device 1500 may be adjusted and / or tuned by varying the pattern 1410 employed, including but not limited to the average size of the apertures 1420 and / or the spacing and / or density of the apertures 1420.

[0427] 15, which illustrates a cross-sectional view of a device 1500 taken along line 15-15 of FIG. 14. In the figure, the device 1500 is shown as including a substrate 110, a first electrode 120, and at least one semiconductive layer 130. In some non-limiting examples, a NPC 1120 is disposed on substantially all of the exposed layer surface 111 of the at least one semiconductive layer 130. In some non-limiting examples, the NPC 1120 can be omitted.

[0428] The NIC 810 is selectively disposed in a pattern that substantially corresponds to the pattern 1410 on the exposed layer surface 111 of the base material, which is the NPC 1120 (but in some non-limiting examples may be at least one semiconductive layer 130 if the NPC 1120 is omitted), as shown in the figure.

[0429] In the figure, a conductive coating 830 suitable for forming a patterned electrode 1400, which is the second electrode 140, is disposed on substantially all of the exposed layer surface 111 of the base material using an open mask deposition process and / or a mask-free deposition process that does not employ any FMM during the high temperature conductive coating deposition process. The base material includes both areas of NIC 810 disposed in a pattern 1410 and areas of NPC 1120 in the pattern 1410 where no NIC 810 is deposited. In some non-limiting examples, the area of ​​NIC 810 can substantially correspond to a first portion including aperture 1420 shown in pattern 1410.

[0430] Due to the nucleation-inhibiting properties of those areas of pattern 1410 in which NIC 810 is disposed (corresponding to apertures 1420), the conductive coating 830 disposed on such areas tends not to remain, resulting in a pattern of selective deposition of conductive coating 830 that substantially corresponds to the remainder of pattern 1410, while leaving those areas of the first portion of pattern 1410 corresponding to apertures 1420 substantially free of conductive coating 830.

[0431] In other words, the conductive coating 830 forming the cathode 342 is deposited substantially selectively only on the second portion, including those areas of the NPC 1120 that surround but do not occupy the apertures 1420 in the pattern 1410.

[0432] FIG. 16A shows a schematic diagram illustrating multiple patterns 1620, 1640 of electrodes 120, 140, 1750 in plan view.

[0433] In some non-limiting examples, the first pattern 1620 includes a plurality of elongated spaced apart regions extending in a first laterally direction. In some non-limiting examples, the first pattern 1620 can include a plurality of first electrodes 120. In some non-limiting examples, the multiple regions making up the first pattern 1620 can be electrically coupled.

[0434] In some non-limiting examples, the second pattern 1640 includes a plurality of elongated spaced apart regions extending in a second lateral direction. In some non-limiting examples, the second lateral direction can be substantially perpendicular to the first lateral direction. In some non-limiting examples, the second pattern 1640 can include a plurality of second electrodes 140. In some non-limiting examples, the multiple regions making up the second pattern 1640 can be electrically coupled.

[0435] In some non-limiting examples, the first pattern 1620 and the second pattern 1640 may form part of an example version of device 100, generally shown at 1600 (FIG. 16C), which may include multiple PMOLED elements.

[0436] In some non-limiting examples, the lateral side 410 of the emissive region 1910 corresponding to (sub)pixel 340 / 264x is formed by the overlap of the first pattern 1620 with the second pattern 1640. In some non-limiting examples, the lateral side 420 of the non-emissive region 1920 corresponds to any lateral side other than the lateral side 410.

[0437] In some non-limiting examples, a first terminal, which in some non-limiting examples may be a positive terminal of the power source 15, is electrically coupled to at least one electrode 120, 140, 1750 of the first pattern 1620. In some non-limiting examples, the first terminal is coupled to at least one electrode 120, 140, 1750 of the first pattern 1620 through at least one drive circuit 300. In some non-limiting examples, a second terminal, which in some non-limiting examples may be a negative terminal of the power source 15, is electrically coupled to at least one electrode 120, 140, 1750 of the second pattern 1640. In some non-limiting examples, the second terminal is coupled to at least one electrode 120, 140, 1750 of the second pattern 1740 through at least one drive circuit 300.

[0438] 16B, which shows a cross-sectional view of device 1600 at deposition stage 1600b taken along line 16B-16B of FIG. 16A. Device 1600 at stage 1600b is shown in the figure as including substrate 110. In some non-limiting examples, NPC 1120 is disposed on exposed layer surface 111 of substrate 110. In some non-limiting examples, NPC 1120 can be omitted.

[0439] The NICs 810 are selectively disposed in a pattern that substantially corresponds to the inverse of the first pattern 1620 on the exposed layer surface 111 of the base material, which is the NPC 1120, as shown.

[0440] In the figures, a conductive coating 830 suitable for forming a first pattern 1620 of electrodes 120, 140, 1750, which is a first electrode 120, is disposed on substantially all of the exposed layer surface 111 of the base material using an open mask deposition process and / or a mask-free deposition process that does not employ any FMM during the high temperature conductive coating deposition process. The base material includes both areas of NIC 810 disposed in the inverse of the first pattern 1620 and areas of NPC 1120 disposed in the first pattern 1620 where no NIC 810 is deposited. In some non-limiting examples, the areas of NPC 1120 can substantially correspond to the elongated spaced apart areas of the first pattern 1620, while the areas of NIC 810 can substantially correspond to the first portion including the gap therebetween.

[0441] Due to the nucleation-inhibiting properties of those regions of the first pattern 1620 in which the NICs 810 are disposed (corresponding to the gaps therebetween), the conductive coating 830 disposed on such regions tends not to remain, resulting in a pattern of selective deposition of the conductive coating 830 that substantially corresponds to the elongated spaced apart regions of the first pattern 1620, while leaving a first portion including the gaps therebetween that are substantially free of the conductive coating 830.

[0442] In other words, the conductive coating 830 forming the first pattern 1620 of the electrodes 120, 140, 1750 is deposited substantially selectively only on the second portion including those regions of the NPC 1120 (or, in some non-limiting examples, the substrate 110 if the NPC 1120 is omitted) that define the elongated spaced apart regions of the first pattern 1620.

[0443]

[00106] Referring now to Figure 16C, there is shown a cross-sectional view of device 1600 taken along line 16C-16C of Figure 16A, in which device 1600 is shown as including a substrate 110, a first pattern 1620 of electrodes 120 deposited as shown in Figure 16B, and at least one semiconducting layer 130.

[0444] In some non-limiting examples, at least one semiconductive layer 130 can be provided as a common layer across substantially all of the lateral sides of the device 1600 .

[0445] In some non-limiting examples, the NPC 1120 is disposed on substantially all of the exposed layer surface 111 of the at least one semiconductive layer 130. In some non-limiting examples, the NPC 1120 can be omitted.

[0446] The NIC 810 is selectively disposed in a pattern that substantially corresponds to a second pattern 1640 on the exposed layer surface 111 of the base material, which is an NPC 1120 (but in some non-limiting examples may be at least one semiconductive layer 130 if the NPC 1120 is omitted), as shown in the figure.

[0447] In the figures, a conductive coating 830 suitable for forming a second pattern 1640 of electrodes 120, 140, 1750, which is the second electrode 140, is disposed on substantially all of the exposed layer surface 111 of the base material using an open mask deposition process and / or a mask-free deposition process that does not employ any FMM during the high temperature conductive coating deposition process. The base material includes both areas of NICs 810 disposed inversely to the second pattern 1640 and areas of NPCs 1120 in the second pattern 1640 where no NICs 810 are deposited. In some non-limiting examples, the areas of NPCs 1120 can substantially correspond to a first portion including the elongated spaced apart areas of the second pattern 1640, while the areas of NICs 810 can substantially correspond to the gaps therebetween.

[0448] Due to the nucleation-inhibiting properties of those regions of the second pattern 1640 in which the NICs 810 are disposed (corresponding to the gaps therebetween), the conductive coating 830 disposed on such regions tends not to remain, resulting in a pattern of selective deposition of the conductive coating 830 that substantially corresponds to the elongated spaced apart regions of the second pattern 1640, while leaving the first portion including the gaps therebetween that are substantially free of the conductive coating 830.

[0449] In other words, the conductive coating 830 forming the second pattern 1640 of the electrodes 120, 140, 1750 is deposited substantially selectively only on the second portion, including those areas of the NPC 1120 that define the elongated spaced apart areas of the second pattern 1640.

[0450] In some non-limiting examples, the thickness of the NIC 810 and conductive coating 830 subsequently deposited to form either or both of the first pattern 1620 and / or second pattern 1640 of the electrodes 120, 140, 1750 may vary according to various parameters, including, but not limited to, the desired application and the desired performance characteristics. In some non-limiting examples, the thickness of the NIC 810 may be comparable to and / or substantially less than the thickness of the subsequently deposited conductive coating 830. The use of a relatively thin NIC 810 to achieve selective patterning of the subsequently deposited conductive coating may be suitable for providing flexible devices 1600, including, but not limited to, PMOLED devices. In some non-limiting examples, the relatively thin NIC 810 may provide a relatively flat surface on which the barrier coating 1650 or other thin film encapsulation (TFE) layers may be deposited. In some non-limiting examples, providing such a relatively flat surface for application of the barrier coating 1650 may enhance adhesion of the barrier coating 1650 to such surfaces.

[0451] At least one of the first patterns 1620 of the electrodes 120, 140, 1750 and at least one of the second patterns 1640 of the electrodes 120, 140, 1750 may be electrically coupled to a power source 15, whether directly and / or through their respective drive circuits 300 for controlling photon emission from the lateral side 410 of the light emitting region 1910 corresponding to the (sub)pixel 340 / 264x, in some non-limiting examples.

[0452] Those skilled in the art will appreciate that the process of forming the second electrode 140 in the second pattern 1640 shown in Figures 16A-16C can be used in a similar manner to form an auxiliary electrode 1750 for the device 1600, in some non-limiting examples. In some non-limiting examples, the second electrode 140 can include a common electrode, and the auxiliary electrode 1750 can be deposited in the second pattern 1640 above the second electrode 140, in some non-limiting examples, or below it, in some non-limiting examples, to be electrically coupled to the second electrode 140. In some non-limiting examples, the second pattern 1640 for such an auxiliary electrode 1750 can be such that the elongated spaced apart regions of the second pattern 1640 are located substantially within the lateral sides 420 of the non-emissive regions 1920 surrounding the lateral sides 410 of the emissive regions 1910 corresponding to the (sub)pixel 340 / 264x. In some non-limiting examples, the second pattern 1640 for such an auxiliary electrode...

Claims

1. An optoelectronic device having a plurality of layers, the optoelectronic device comprising: a first capping layer (CPL), the first CPL comprising a first CPL material, the first CPL disposed within a first light-emitting region configured to emit photons through the first CPL having a first wavelength spectrum characterized by a first start wavelength; a second CPL, the second CPL material comprising a second CPL material disposed within a second light-emitting region configured to emit photons through the second CPL having a second wavelength spectrum characterized by a second start wavelength different from the first start wavelength; Equipped with the first CPL exhibits a first refractive index at at least one wavelength in the first wavelength spectrum, the first refractive index being at least one of 1.8, 1.9, 1.95, 2.0, 2.05, 2.1, 2.2, 2.3, and 2.5; and the second CPL exhibits a second refractive index at at least one wavelength in the second wavelength spectrum, the second refractive index being at least one of 1.8, 1.9, 1.95, 2.0, 2.05, 2.1, 2.2, 2.3, and 2.5; is true, the optical properties of the first CPL are different from the optical properties of the second CPL; An optoelectronic device, wherein at least one of the first CPL and the second CPL is a nucleation inhibiting coating (NIC) for patterning a conductive coating, and an exposed layer surface of the at least one of the first CPL and the second CPL is devoid of a closed film of the conductive coating.

2. An optoelectronic device as described in claim 1, wherein the first start wavelength is less than or equal to the second start wavelength.

3. The optoelectronic device of claim 1, wherein the first wavelength spectrum and the second wavelength spectrum are within the visible spectrum.

4. The optoelectronic device of claim 1, wherein the first wavelength spectrum corresponds to a color that is one of B (blue) and G (green).

5. The optoelectronic device of claim 1, wherein the second wavelength spectrum corresponds to a color that is one of G (green) and R (red).

6. The optoelectronic device of claim 1, wherein the first wavelength spectrum corresponds to a color that is B (blue) and the second wavelength spectrum corresponds to a color that is one of G (green) and R (red).

7. The optoelectronic device of claim 1, wherein the first wavelength spectrum corresponds to a color G (green) and the second wavelength spectrum corresponds to a color R (red).

8. The method of claim 7, wherein the at least one wavelength in the first wavelength spectrum is one of the first start wavelength and a first peak wavelength of the first wavelength spectrum; and the at least one wavelength in the second wavelength spectrum is one of the second start wavelength and a second peak wavelength of the second wavelength spectrum; The optoelectronic device of claim 1 , wherein at least one of the following is true:

9. The optoelectronic device of claim 8, wherein the first peak wavelength is equal to or less than the second peak wavelength.

10. The optoelectronic device of claim 8, wherein the first start wavelength is the shortest wavelength of at least one wavelength in the first wavelength spectrum having an intensity that is one of 20%, 15%, 10%, 5%, 3%, 1%, or 0.1% of the intensity at the first peak wavelength.

11. The optoelectronic device of claim 8, wherein the second starting wavelength is the shortest wavelength of at least one wavelength in the second wavelength spectrum having an intensity that is one of 20%, 15%, 10%, 5%, 3%, 1%, or 0.1% of the intensity at the first peak wavelength.

12. At least one of a thickness and a morphology and a material composition of the first CPL is adjusted to provide the first refractive index; and At least one of a thickness, a morphology, and a material composition of the second CPL is adjusted to provide the second refractive index. The optoelectronic device of claim 1 , wherein at least one of the following is true:

13. The optoelectronic device of claim 1, wherein the refractive index of the first CPL for at least one wavelength in the first wavelength spectrum exceeds the refractive index of the first CPL for at least one wavelength in the second wavelength spectrum.

14. An optoelectronic device as described in claim 1, wherein the refractive index of the second CPL for at least one wavelength in the second wavelength spectrum exceeds the refractive index of the second CPL for at least one wavelength in the first wavelength spectrum.

15. The optoelectronic device of claim 1, wherein the refractive index of at least one of the first CPL for at least one wavelength in the second wavelength spectrum and the second CPL for at least one wavelength in the first wavelength spectrum is one of 1.8 or less, 1.7 or less, 1.65 or less, 1.6 or less, 1.5 or less, 1.45 or less, 1.4 or less, or 1.3 or less.

16. The optoelectronic device of claim 1, wherein the first CPL exhibits a first absorption edge at a first absorption edge wavelength, and the second CPL exhibits a second absorption edge at a second absorption edge wavelength.

17. The refractive index of the first CPL for at least one wavelength longer than the first absorption edge wavelength is at least the refractive index of the first CPL for at least one wavelength shorter than the first absorption edge wavelength; The refractive index of the second CPL for at least one wavelength longer than the second absorption edge wavelength is at least the refractive index of the second CPL for at least one wavelength shorter than the second absorption edge wavelength; 17. The optoelectronic device of claim 16, wherein at least one of the following is true:

18. The first absorption edge wavelength is shorter than the first onset wavelength; and The second absorption edge wavelength is shorter than the second absorption start wavelength.

17. The optoelectronic device of claim 16, wherein at least one of the following is true:

19. The optoelectronic device of claim 16, wherein the difference between the first onset wavelength and the first absorption edge wavelength is one of 50 nm or less, 40 nm or less, 35 nm or less, 30 nm or less, 25 nm or less, 20 nm or less, 15 nm or less, 10 nm or less, 5 nm or less, or 3 nm or less.

20. The optoelectronic device of claim 16, wherein the difference between the second start wavelength and the second absorption edge wavelength is one of 200 nm or less, 150 nm or less, 130 nm or less, 100 nm or less, 80 nm or less, 70 nm or less, 60 nm or less, 50 nm or less, 40 nm or less, 35 nm or less, 25 nm or less, 20 nm or less, 14 nm or less, or 10 nm or less.

21. The optoelectronic device of claim 16, wherein the first absorption edge wavelength is shorter than the second absorption edge wavelength.

22. The first absorption edge is characterized by a first absorption wavelength within a first absorption wavelength spectrum where an extinction coefficient of the first CPL is equal to a threshold value; and the second absorption edge is characterized by a second absorption wavelength within a second absorption wavelength spectrum where the extinction coefficient of the second CPL is equal to the threshold value; 17. The optoelectronic device of claim 16, wherein at least one of the following is true:

23. The optoelectronic device of claim 22, wherein the threshold is approximately zero.

24. The optoelectronic device of claim 22, wherein the threshold is at least one of 0.10, 0.09, 0.08, 0.06, 0.05, 0.03, 0.01, 0.005, 0.

001.

25. The method of claim 20, wherein the first absorption wavelength is the longest wavelength of at least one wavelength in the first absorption wavelength spectrum for which the extinction coefficient of the first CPL is equal to the threshold value; and the second absorbance wavelength being the longest wavelength of at least one wavelength in the second absorbance wavelength spectrum at which the extinction coefficient of the second CPL is equal to the threshold value; 23. The optoelectronic device of claim 22, wherein at least one of the following is true:

26. The method of claim 25, wherein a first derivative of the extinction coefficient of the first CPL as a function of wavelength is negative at the first absorption wavelength; and a first derivative of the extinction coefficient of the second CPL as a function of wavelength is negative at the second extinction wavelength; 23. The optoelectronic device of claim 22, wherein at least one of the following is true:

27. ​​The extinction coefficient of the first CPL at at least one wavelength longer than the first absorption wavelength is less than or equal to the threshold value; and the extinction coefficient of the second CPL at at least one wavelength longer than the second absorption wavelength is equal to or less than the threshold value; 23. The optoelectronic device of claim 22, wherein at least one of the following is true:

28. The optoelectronic device of claim 22, wherein at least one of the extinction coefficient of the first CPL at a wavelength longer than the first start wavelength and the extinction coefficient of the second CPL at a wavelength longer than the second start wavelength is one of 0.1 or less, 0.09 or less, 0.08 or less, 0.06 or less, 0.05 or less, 0.03 or less, 0.01 or less, 0.005 or less, and 0.0001 or less.

29. The optoelectronic device of claim 22, wherein at least one of the absorption coefficient of the first CPL at a wavelength shorter than the first absorption edge wavelength and the absorption coefficient of the second CPL at a wavelength shorter than the second absorption edge wavelength is at least one of 0.1, 0.12, 0.13, 0.15, 0.18, 0.2, 0.25, 0.3, 0.5, 0.7, 0.75, 0.8, 0.9, and 1.

0.

30. The optoelectronic device of claim 22, wherein the absorption coefficient of the second CPL exceeds the absorption coefficient of the first CPL for at least one wavelength within the first wavelength spectrum.

31. An optoelectronic device as described in claim 22, wherein the absorption coefficient of the second CPL is at least the absorption coefficient of the first CPL for all wavelengths in the first wavelength spectrum.

32. The optoelectronic device of claim 22, wherein the extinction coefficient of the first CPL is less than or equal to the threshold at the second start wavelength.

33. The optoelectronic device of claim 22, wherein the extinction coefficient of the first CPL is less than or equal to the threshold at all wavelengths in the second wavelength spectrum.

34. The optoelectronic device of claim 22, wherein the extinction coefficient of the first CPL at any wavelength within the second wavelength spectrum is one of 0.1 or less, 0.09 or less, 0.08 or less, 0.06 or less, 0.05 or less, 0.03 or less, 0.01 or less, 0.005 or less, or 0.0001 or less.

35. The optoelectronic device of claim 1, wherein at least one of the first CPL and the second CPL acts as a patterning coating, the patterning coating having an initial adhesion coefficient of a conductive coating material to an exposed layer surface of the patterning coating, the initial adhesion coefficient being lower than the initial adhesion coefficient to an exposed layer surface of an underlying surface on which the patterning coating is deposited.

36. The optoelectronic device of claim 1, wherein the first CPL material has a different composition than the second CPL material.

37. The optoelectronic device of claim 1, further comprising at least one electrode coating in the first light-emitting region and the second light-emitting region.

38. An optoelectronic device as described in claim 37, wherein the first CPL is disposed on an exposed layer surface of the at least one electrode coating.

39. An optoelectronic device as described in claim 38, wherein the at least one electrode coating includes a metal coating and a conductive coating disposed on an exposed layer surface of the metal coating.

40. The optoelectronic device of claim 39, further comprising at least one semiconductor layer, and wherein the at least one electrode coating is between the at least one semiconductor layer and the first CPL in the first light-emitting region and between the at least one semiconductor layer and the second CPL in the second light-emitting region.

41. The optoelectronic device further comprises a third CPL, the third CPL comprising a third CPL material, the third CPL being disposed within a third light-emitting region, the third light-emitting region being configured to emit photons through the third CPL having a third wavelength spectrum characterized by a third start wavelength; the third start wavelength is different from at least one of the first start wavelength and the second start wavelength; 9. The optoelectronic device of claim 8, wherein the third CPL exhibits a third refractive index at at least one wavelength in the third wavelength spectrum, the third refractive index being at least one of 1.8, 1.9, 1.95, 2.0, 2.05, 2.1, 2.2, 2.3, and 2.

5.

42. The optoelectronic device of claim 41, wherein the first wavelength spectrum corresponds to a color that is B (blue), the second wavelength spectrum corresponds to a color that is G (green), and the third wavelength spectrum corresponds to a color that is R (red).

43. The optoelectronic device of claim 41, wherein the at least one wavelength in the third wavelength spectrum is one of the third start wavelength and a third peak wavelength of the third wavelength spectrum.

44. An optoelectronic device as described in claim 43, wherein the third peak wavelength is less than or equal to the second peak wavelength and is at least as long as the first peak wavelength.

45. The optoelectronic device of claim 41, wherein at least one of a thickness and morphology and material composition of the third CPL is adjusted to provide the third refractive index.

46. The optoelectronic device described in claim 41, wherein the third CPL exhibits a third absorption edge at a third absorption edge wavelength.

47. An optoelectronic device as described in claim 46, wherein the refractive index of the third CPL for at least one wavelength longer than the third absorption edge wavelength is at least the refractive index of the third CPL for at least one wavelength shorter than the third absorption edge wavelength.

48. An optoelectronic device as described in claim 46, wherein the third absorption edge wavelength is shorter than the third onset wavelength.

49. The optoelectronic device of claim 46, wherein the difference between the third start wavelength and the third absorption edge wavelength is one of 200 nm or less, 150 nm or less, 130 nm or less, 100 nm or less, 80 nm or less, 70 nm or less, 60 nm or less, 50 nm or less, 40 nm or less, 35 nm or less, 25 nm or less, 20 nm or less, 14 nm or less, or 10 nm or less.

50. The optoelectronic device described in claim 46, wherein the third absorption edge is characterized by a third absorption wavelength within a third absorption wavelength spectrum at which the extinction coefficient of the third CPL is equal to a threshold value.

51. The optoelectronic device of claim 50, wherein the third absorption wavelength is the longest wavelength of at least one wavelength in the third absorption wavelength spectrum in which the absorption coefficient of the third CPL is equal to the threshold value.

52. The optoelectronic device of claim 50, wherein the first derivative of the absorption coefficient of the third CPL as a function of wavelength is negative at the third absorption wavelength.

53. An optoelectronic device as described in claim 50, wherein the absorption coefficient of the first CPL at at least one wavelength longer than the third absorption wavelength is less than or equal to the threshold value.

54. The optoelectronic device of claim 50, wherein the extinction coefficient of the third CPL at a wavelength longer than the third starting wavelength is one of 0.1 or less, 0.09 or less, 0.08 or less, 0.06 or less, 0.05 or less, 0.03 or less, 0.01 or less, 0.005 or less, or 0.0001 or less.

55. The optoelectronic device of claim 50, wherein the extinction coefficient of the third CPL at a wavelength shorter than the third absorption edge wavelength is at least one of 0.1, 0.12, 0.13, 0.15, 0.18, 0.2, 0.25, 0.3, 0.5, 0.7, 0.75, 0.8, 0.9, or 1.

0.

56. The optoelectronic device of claim 41, wherein the third CPL acts as a patterning coating, the patterning coating having an initial adhesion coefficient of conductive coating material to an exposed layer surface of the patterning coating, the initial adhesion coefficient being lower than the initial adhesion coefficient to an exposed layer surface of an underlying surface on which the patterning coating is deposited.

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