Method for manufacturing a plurality of semiconductor lasers and semiconductor laser

Abstract

The present invention relates to a method for manufacturing a plurality of semiconductor lasers (1), the method comprising the steps of: a) providing a substrate (25) having a semiconductor stack (2) and a plurality of module regions (10), each module region having at least one resonator region (29) and defined by lateral singulation lines (91) perpendicular to the resonator region and by longitudinal singulation lines (92) parallel to the resonator region, b) forming recesses (3) overlapping the lateral singulation lines by a dry chemical etching process, c) wet chemically etching the side surfaces (31) of the recesses to form resonator faces (30), and d) singulating the substrate (25) along the lateral and longitudinal singulation lines. Furthermore, a semiconductor laser (1) is presented.

Description

[Technical field]

[0001] The present application relates to a method for manufacturing a semiconductor laser and to a semiconductor laser.

[0002] In the manufacture of edge-emitting semiconductor lasers, such as those emitting in the blue or ultraviolet spectral regions, the resonator facets of the semiconductor laser are typically produced by scribing and breaking, but this process is prone to variability and is costly.

[0003] The challenge is to obtain high quality resonator facets reliably and at low cost.

[0004] This problem is solved, inter alia, by a method and a semiconductor laser according to the respective independent claims. Further configurations and advantageous embodiments are the subject of the respective dependent claims.

[0005] The present invention relates to a method for manufacturing a plurality of semiconductor lasers.

[0006] In accordance with at least one embodiment of the method, the method includes providing a substrate having a semiconductor stack and a number of module regions, e.g., corresponding to regions of the substrate having the semiconductor stack that will produce semiconductor lasers during manufacture.

[0007] The semiconductor layer sequence has, for example, an active region arranged for generating radiation, the active region being arranged between a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type, for example arranged for generating radiation in the ultraviolet, visible or infrared spectral range.

[0008] The substrate is, for example, a growth substrate for the semiconductor layer stack, but it can also be a support different from the growth substrate, which is applied to the semiconductor layer stack before singulation into semiconductor lasers, i.e. while still in the wafer composite.

[0009] According to at least one embodiment of the method, each module region has at least one resonator region, for example exactly one resonator region or at least two resonator regions, the width of the resonator region, i.e. the extent of the resonator region in the lateral direction perpendicular to the resonator axis, is for example ≧1 μm and ≦60 μm.

[0010] Resonator regions are understood in particular to mean regions in the resonator in which lateral guiding of radiation propagating between the resonator faces takes place, the radiation here being, for example, index-guided or amplitude-guided (also called gain-guided).

[0011] For example, the resonator region is a bridge-type waveguide. Alternatively, the resonator region is for example a region of a semiconductor laser in which radiation propagates gain-guided inside the resonator, for example by laterally restricted current conduction. Lateral structuring of the semiconductor layer stack to form protrusions is not necessary in this case.

[0012] For example, each module area is defined by a respective lateral singulation line and a respective longitudinal singulation line, each singulation line corresponding in particular to the location where singulation into a plurality of semiconductor lasers will take place upon completion of the method.

[0013] In this case, the direction extending parallel to the main direction of extension (or resonator axis) of the resonator region is considered to be the longitudinal direction. In the finished semiconductor laser, the radiation generated in the active region oscillates along the resonator axis in the resonator region. The transverse direction here extends perpendicular to the longitudinal direction.

[0014] According to at least one embodiment of the method, the method comprises the step of forming recesses which overlap the transverse singulation lines, in particular also at the points where the resonator axes of the resonator regions intersect the transverse singulation lines.

[0015] The recess is formed, for example, by a dry chemical etching process, for example a plasma etching process. A lithographic process can be applied for said structuring of the semiconductor layer stack, for example by means of a photoresist mask or a hard mask. The recess is arranged, for example, to extend partially through the semiconductor layer stack. For example, the recess also extends into the substrate.

[0016] For example, the recess has a depth in the vertical direction, ie perpendicular to the main extension plane of the semiconductor layer stack, of 2 μm to 25 μm.

[0017] According to at least one embodiment of the method, the method comprises a step of wet-chemical etching the side surfaces of the recess in order to form the resonator faces. By using wet-chemical etching, material can be removed not only in the vertical direction but also in the lateral direction. Starting from a structuring which is previously performed by dry-chemical etching in the form of a recess, by using wet-chemical etching, crystal planes extending perpendicular to the longitudinal direction can be exposed. During the wet-chemical etching, the mask used for the dry-chemical etching process can be already removed or still be present in the semiconductor layer stack.

[0018] According to at least one embodiment of the method, the method comprises a step of singulating the substrate along lateral and longitudinal singulation lines. The singulation of the substrate is in particular carried out after a dry chemical etching process and a wet chemical etching. That is to say, the resonator facets of the semiconductor laser do not occur during the singulation of the substrate, but are rather formed in a preceding step. For example, wet or dry chemical etching, chemical processes such as plasma etching, mechanical methods such as sawing or breaking, and / or processes using a laser beam, such as laser ablation or stealth dicing, are suitable for the singulation.

[0019] In at least one embodiment of the method for manufacturing a plurality of semiconductor lasers, a substrate is provided having a semiconductor layer stack and a plurality of module regions, each module region having at least one resonator region and being defined by lateral singulation lines in a direction perpendicular to the resonator region and by longitudinal singulation lines in a direction parallel to the resonator region. Recesses overlapping the lateral singulation lines are formed, in particular by a dry chemical etching process. The side surfaces of the recesses are wet chemically etched to form the resonator faces. The substrate is singulated along the lateral singulation lines and the longitudinal singulation lines.

[0020] According to the described method, the resonator surface can be formed by a two-stage etching process, in which the singulation of the substrate is only carried out after the resonator surface is formed. The singulation itself therefore no longer has a direct effect on the quality of the resonator surface. In particular, high-quality resonator surfaces with high efficiency can be produced at lower cost and with lower variations compared to production by scribing and breaking.

[0021] According to at least one embodiment of the method, at least in the region of the resonator region, crystal planes extending perpendicularly to the resonator region are exposed during wet-chemical etching, which can be achieved, for example, by a wet-chemical etching process that is characterized by a high selectivity with respect to crystal directions.

[0022] According to at least one embodiment of the method, the semiconductor layer sequence is based on nitride semiconductor materials.

[0023] For example, wet chemical etching exposes the (1-100) plane of the semiconductor stack. The (1-100) plane is also called the m-plane.

[0024] Nitride semiconductor materials include, for example, OH - A basic solution that generates ions is suitable, for example KOH, TMAH, or NH3 can be applied.

[0025] "Based on nitride semiconductor materials" in the context of the present invention means that the semiconductor layer sequence or at least a part of it, particularly preferably at least the active region and / or the growth substrate, is made of a nitride semiconductor material, preferably Al x In y Ga 1-x-y N[0≦x≦1, 0≦y≦1 and x+y≦1]. In this case, the material does not necessarily have a composition that strictly follows mathematically the formula above. Rather, it can include, for example, one or more doping substances and additional components. However, for the sake of simplicity, the formula above includes only the main components of the crystal lattice (Al, Ga, In, N), even if they can be partially replaced and / or supplemented by small amounts of other substances.

[0026] Active regions based on nitride semiconductor materials make it possible to produce radiation in the ultraviolet, blue or green spectral range with high efficiency.

[0027] However, the described method may be used with other semiconductor materials, in particular other III-V compound semiconductor materials, e.g. Al, in particular for yellow to red emission. x In y Ga 1-x-y P, or Al, especially for red and infrared emissions x In y Ga 1-x-y As are also suitable for x, y, and x+y≦1, respectively, where 0≦x≦1, 0≦y≦1 and in particular x≠1, y≠1, x≠0 and / or y≠0.

[0028] According to at least one embodiment of the method, the recesses are formed by a dry chemical etching process, for example at least 1 μm away from the longitudinal singulation lines, so that in this case the recesses do not extend over the entire area of ​​adjacent module areas.

[0029] According to at least one embodiment of the method, the recess has a polygonal basic shape, for example a basic shape having four or more corners, such as a basic shape having five corners, six corners or eight corners, can be used.

[0030] In particular, the recesses can be arranged such that, when the semiconductor laser is viewed from above, each corner is located on a side of each of the resonator regions relative to the resonator regions.

[0031] According to at least one embodiment of the method, at least two sides of the polygonal basic shape form an angle between 100° and 140°, in particular between 110° and 130°, for example 120°.

[0032] That is, for wet chemical etching, side surfaces are provided which are at an angle of more than 90° to one another. For example, for semiconductors based on nitride semiconductor materials, it has been found that in the vicinity of such corners, for example corners with an angle of 120° between adjacent side surfaces, particularly smooth surfaces which can be used as resonator faces can be formed. That is, by giving the recess a special shape, the quality of the crystal faces to be produced can be advantageously influenced.

[0033] According to at least one embodiment of the method, the recess has an at least partially curved basic shape. For example, at least one partial region of the edge of the recess has a circular or elliptical basic shape. For example, the radius of curvature of the recess in the region of the resonator region is 10 to 500 times the width of the resonator region. The width of the resonator region in this case refers to the extent of the resonator region in the lateral direction. The curved basic shape of the recess provides different angles relative to the crystal planes for the wet chemical etching process. Furthermore, the presented ratio of the radius of curvature relative to the width of the resonator region makes it possible to ensure that the wet chemical etching process produces flat resonator surfaces in the region of the resonator region. The wet chemical etching process results in the side of the recess being flat in the optically active region, i.e. in the region of the resonator region.

[0034] The recess may extend partially curved and partially straight when the semiconductor laser is viewed from above, for example a polygonal basic shape may have one or more rounded corners.

[0035] According to at least one embodiment of the method, laterally adjacent recesses are interconnected by channels. Unlike the recesses, the channels are arranged in particular outside the region of the resonator region. Via such channels, a medium exchange between the individual recesses can be achieved during wet chemical etching. Furthermore, the wettability of the semiconductor material with the etching solution can be improved. The depth of the channels can correspond to the depth of the recesses or can be different from the recesses. For example, it may be sufficient for the depth of the channels to be smaller than the depth of the recesses.

[0036] According to at least one embodiment of the method, each recess between adjacent module areas extends over the entire longitudinal singulation line. In other words, the recess extends over a plurality of module areas along a transverse singulation line or over all module areas of the substrate along said direction. For example, the recess is trench-shaped, in which case the main extension direction of the trench extends along the transverse singulation line.

[0037] According to at least one embodiment of the method, the resonator region is a bridge-type waveguide, the semiconductor layer stack being structured in particular laterally such that the bridge-type waveguide forms a protrusion that allows refractive index guiding of the radiation propagating in the oscillator.

[0038] According to at least one embodiment of the method, the bridge-type waveguide has a widening region along the transverse singulation line, in which the transverse dimension of the bridge-type waveguide is larger than the dimension in the remaining transverse region. The widening region can extend transversely up to the longitudinal singulation line or can be spaced apart from it. The widening region along the longitudinal direction is preferably small compared to the widening of the semiconductor laser along said direction. For example, the widening region in the longitudinal direction within the module region is at most 20%, or at most 10%, or at most 2% of the widening of the module region or of the semiconductor laser to be manufactured in said direction.

[0039] In particular, the recesses can be formed in the widened region, for example starting from semiconductor material that is at the same height in the lateral direction, thereby reducing the risk of the quality of the resonator surface to be produced being impaired by height variations at the edges of the bridge-type waveguide.

[0040] According to at least one embodiment of the method, the recess is formed completely inside the widened region, so that immediately after it is formed it is surrounded along its entire periphery by semiconductor material at the same height.

[0041] After singulation with a semiconductor laser along the lateral singulation lines, the recesses can extend up to the laterally extending side surfaces formed during singulation and can border semiconductor material at the same height at all points that are spaced apart from the laterally extending side surfaces when viewed from above.

[0042] Alternatively, the recess may extend along the transverse singulation line over several or all of the module regions, for example in the form of a trench, i.e. a continuous recess may border several widening regions.

[0043] Furthermore, a semiconductor laser is presented, the method described above is for example suitable for the manufacture of said semiconductor laser, and therefore the features described in connection with the method can also be used for said semiconductor laser and vice versa.

[0044] According to at least one embodiment, the semiconductor laser has a semiconductor layer stack and a resonator region, where the semiconductor laser has respective resonator faces extending along the resonator region between two laterally extending side surfaces and arranged at the laterally extending side surfaces offset with respect to said side surfaces.

[0045] Thus, when the semiconductor laser is viewed from above, the resonator facets are not present on the transversely extending side surfaces, and the distance between the opposing resonator facets is shorter than the length of the semiconductor chip along the longitudinal direction.

[0046] According to at least one embodiment of the semiconductor laser, the semiconductor laser has a recess along each of the laterally extending sides, which, when viewed from above, extend laterally to the resonator region in a curved or bent manner. In this case, partial regions of the side of the recess form the resonator surface. The curved or bent regions of the side of the recess are arranged laterally to the resonator surface. In the vertical direction, the recess extends into the substrate of the semiconductor laser, on which, for example, the semiconductor layer stack of the semiconductor laser is arranged, for example, deposited.

[0047] In accordance with at least one embodiment of the semiconductor laser, the resonator region is formed as a bridged waveguide.

[0048] According to at least one embodiment of the semiconductor laser, the bridge-type waveguide has a widening region in the lateral direction, i.e. the resonator region is formed by a bridge-type waveguide having such a widening region. The widening region extends, for example, at least partially to the nearest lateral side. Alternatively, the widening region may be spaced apart from the lateral side at all points.

[0049] According to at least one embodiment of the semiconductor laser, the widening region extends to the closest longitudinal side surface, in particular to two opposite longitudinal sides, or alternatively, the widening region may be spaced apart from the longitudinal side surfaces at all points.

[0050] For example, the recess may be arranged in the widened region, where the recess extends to a laterally extending side surface when viewed from above the semiconductor laser, and the recess may border the widened region at all points that are spaced apart from the laterally extending side surface when viewed from above, i.e. the bordering semiconductor material has the same height at these points.

[0051] Further configurations and advantageous embodiments emerge from the following description of the respective examples in conjunction with the figures. [Brief description of the drawings]

[0052] [Figure 1A] 1A-1D show an embodiment of a method for manufacturing a semiconductor laser, based on intermediate steps shown diagrammatically in plan view; [Figure 1B] 1A-1D show an embodiment of a method for manufacturing a semiconductor laser, based on intermediate steps shown diagrammatically in plan view; [Figure 1C] 1A-1D show an embodiment of a method for manufacturing a semiconductor laser, based on intermediate steps shown diagrammatically in plan view; [Figure 1D] 1A-1D show an embodiment of a method for manufacturing a semiconductor laser, based on intermediate steps shown diagrammatically in plan view; [Figure 1E] 1A-1D show an embodiment of a method for manufacturing a semiconductor laser, based on intermediate steps shown diagrammatically in plan view; [Figure 2A] 1 shows a plan view of an embodiment of the method, based on a schematic representation of intermediate steps; [Figure 2B] 1 shows a plan view of an embodiment of the method, based on a schematic representation of intermediate steps; [Figure 2C] 1 shows a plan view of an embodiment of the method, based on a schematic representation of intermediate steps; [Figure 3A] 1 shows a plan view of an embodiment of the method, based on a schematic representation of intermediate steps; [Figure 3B] 1 shows a plan view of an embodiment of the method, based on a schematic representation of intermediate steps; [Figure 3C] 1 shows a plan view of an embodiment of the method, based on a schematic representation of intermediate steps; [Figure 4A] FIG. 2 is a plan view of an embodiment of a method based on intermediate steps shown diagrammatically. [Figure 4B] FIG. 2 is a plan view of an embodiment of a method based on intermediate steps shown diagrammatically. [Diagram 5] FIG. 2 is a plan view of an embodiment of a method based on intermediate steps shown diagrammatically. [Figure 6A]FIG. 2 is a plan view of an embodiment of a method according to the intermediate steps shown diagrammatically. [Figure 6B] FIG. 2 is a plan view of an embodiment of a method according to the intermediate steps shown diagrammatically. [Figure 7] FIG. 2 is a plan view of an embodiment of a method based on intermediate steps shown diagrammatically. [Figure 8] FIG. 2 is a plan view of an embodiment of a method based on intermediate steps shown diagrammatically. [Figure 9A] FIG. 1 is a schematic plan view showing an embodiment of a semiconductor laser. [Figure 9B] 4A and 4B are corresponding side views of an embodiment of a semiconductor laser.

[0053] Identical elements, elements of the same type or elements having similar functions are respectively provided with the same reference numerals.

[0054] The figures are respectively schematic and therefore are not necessarily drawn to scale: rather, individual components, in particular layer thicknesses, may be exaggerated for better understanding and / or for better presentation.

[0055] 1A to 1D, an embodiment of a method for producing a plurality of semiconductor lasers is respectively shown in a schematic plan view, where a part of a substrate 25 is shown with ten module areas 10. The module areas are each delimited by two lateral singulation lines 91 and longitudinal singulation lines 92 running perpendicularly thereto.

[0056] The semiconductor layer sequence 2 is formed on a substrate 25, with each module region 10 having one resonator region 29. The substrate is, for example, a growth substrate for the epitaxial deposition of a semiconductor layer sequence, for example GaN for the epitaxial deposition of a semiconductor layer sequence based on a nitride semiconductor material. Departing from the example embodiment described, the semiconductor laser 1 to be produced may also have two or more resonator regions 29. The semiconductor laser to be produced may, for example, be index-guided or gain-guided.

[0057] 1B, a mask 6 having a plurality of openings 60, which are shown hatched in FIG. 1B, is formed on the substrate 25. The mask may be a photoresist mask or a hard mask, such as a SiN mask or a SiO2 mask.

[0058] In the region of the openings 60, the substrate with the semiconductor layer sequence is subjected to a dry chemical etching process, for example a plasma etching process, which results in recesses 3 in the region of the openings 60. Each recess overlaps a lateral singulation line 91. Each recess 3 extends, for example, through the semiconductor layer sequence 2 into the substrate 25 (FIG. 1C).

[0059] In a subsequent step, as indicated diagrammatically in Fig. 1D by the arrow 7 for the recess 3, the side surfaces 31 of the recess 3 are wet-chemically etched, so that a resonator facet 30 is formed in the region of the resonator region 29. The wet-chemical etching is performed with high selectivity with respect to the crystal orientation of the semiconductor material, so that crystal planes extending perpendicular to the longitudinal direction of the semiconductor laser to be manufactured are exposed. For example, a semiconductor laser with a semiconductor layer sequence based on nitride semiconductor materials may be in the (1-100) crystal plane.

[0060] At the time of the wet-chemical etching, the mask 6 may already be removed, as shown in figure 1D, but it may alternatively be preferable to only remove the mask after the wet-chemical etching.

[0061] The substrate is then singulated along lateral singulation lines 91 and longitudinal singulation lines 92 (FIG. 1E). This results in a semiconductor laser 1 from each module area 10. Along the lateral singulation lines 91 the laterally extending side faces 11 of each semiconductor laser result, along the longitudinal singulation lines 92 the longitudinally extending side faces 12 of each semiconductor laser result (see FIG. 9A). Since the resonator faces 30 are already formed at the time of singulation, the singulation process itself no longer has a direct effect on the quality of the resonator faces. This results in a high degree of flexibility with regard to the singulation process. For example, the singulation here can be carried out mechanically, chemically or by means of laser radiation.

[0062] In the embodiment shown, the recess 3 has a polygonal basic shape, in particular a hexagonal basic shape, when viewed from above on the substrate 25. The angle between the two side surfaces 31 of the recess 3 has, for example, an angle between 100° and 140°, about 120°. It has been found that for nitride semiconductor materials, the resonator facets 30 can be produced with particularly high quality for the wet-chemical etching process if other side surfaces than those extending parallel or perpendicular to the crystal planes to be exposed are also provided. In particular, a particularly high quality for the resonator facets 30 can be achieved with an angle of 120° or at least approximately 120° to the nitride semiconductor material.

[0063] In principle, however, different shapes can be used for the recesses 3. This is illustrated in figures 2A to 2C. Instead of a polygonal, in particular a hexagonal, basic shape (fig. 2A), figure 2B shows a quadrangular, for example rectangular, basic shape.

[0064] In the embodiment of Fig. 2C, the recess 3 has a partially curved basic shape, for example an elliptical basic shape. In the case of a curved basic shape, the radius of curvature of the recess 3 in the region of the resonator region 29 is between 10 and 500 times the width of the resonator region 29. A wet chemical etching process can therefore remove the semiconductor material in the region of the resonator region 29 so as to result in a flat resonator facet 30.

[0065] Partially curved and polygonal basic shapes can also be combined with one another, for example polygonal shapes with rounded corners.

[0066] The polygonal recesses 3 are preferably formed and arranged relative to the resonator regions 29 such that the corners of the basic polygonal shape are laterally spaced apart from the resonator regions 29. That is, each resonator region 29 is in contact with only one side of the recess.

[0067] The embodiment shown in Figures 3A-3C corresponds generally to the embodiment described in relation to Figures 2A-2C.

[0068] 2A-2C is that the recesses 3 are interconnected in the lateral direction by channels 4. The channels 4 can each extend along the lateral direction over two or more module areas 10, in particular over all module areas 10. The depth of the channels 4 can correspond to the depth of the recesses 3 or can be smaller or larger than this. Via the channels 4, a medium exchange can take place during the wet-chemical etching process. This simplifies the uniform formation of the individual resonator faces 30 for the semiconductor laser 1 to be manufactured across the substrate in the lateral direction.

[0069] In the embodiment shown in Figures 4A and 4B, the resonator region 29 is a bridge-type waveguide. The bridge-type waveguide has a widening region 27, in which the bridge-type waveguide has a greater width than the remaining region. The widening region 27 extends laterally and, in the embodiment shown, over the entire adjacent resonator region 29. The widening region 27 overlaps the lateral singulation line 91 when viewed from above the substrate. The widening region 27 has the same thickness in the vertical direction as the resonator region 29 configured as a bridge-type waveguide.

[0070] 4B, the recesses 3 can be configured to be formed completely within the widened region 27, i.e., the recesses 3 are surrounded along their entire periphery by semiconductor material at the same height before the dry chemical etching process, thus reducing the risk of the resonator facet 30 to be formed being damaged by a protrusion formed by the resonator region 29 configured as a bridge-type waveguide.

[0071] In the embodiment shown in Fig. 4B, the recess 3 is polygonal, in particular hexagonal, but apart from this, other basic shapes for the recess 3 can also be used, for example the configurations described in connection with Fig. 2A to 2C.

[0072] The embodiment shown in Fig. 5 corresponds substantially to the embodiment described in relation to Fig. 4A and Fig. 4B. The difference with Fig. 4A and Fig. 4B is that the recess 3 extends in a trench-like manner over the entirety of the multiple module regions 10. That is, the recess 3 is associated with multiple resonator regions 29 of different module regions 10.

[0073] The embodiment shown in Figures 6A and 6B corresponds substantially to the embodiment described in connection with Figures 4A and 4B. The difference with respect to Figures 4A and 4B is that the widening region 27 does not extend over the entirety of adjacent module regions 10. Each module region 10 is assigned to a widening region 27 that is spaced apart from the corresponding longitudinal singulation line 92. In this embodiment as well, in addition to the hexagonal basic shape, the other basic shapes of the recesses 3 mentioned above can be used.

[0074] For example, a rectangular basic shape for the recess 3 can be used, as shown in FIG.

[0075] The embodiment shown in FIG. 8 corresponds generally to the embodiment described in relation to FIGS. 6A and 6B.

[0076] The difference with respect to FIGS. 6A and 6B is that the recess 3 extends across the entirety of laterally adjacent module regions 10, as explained in relation to FIG.

[0077] 9A and 9B show a schematic plan view and corresponding side view of an embodiment of a semiconductor laser. By way of example, a semiconductor laser is shown which can be produced in the manner described in relation to FIG. 6B. However, the configurations described in relation to the various embodiments of the method, in particular the configuration of the widened region 27 and / or the configuration of the recess 3, are equally applicable to the semiconductor laser 1.

[0078] The semiconductor laser 1 comprises a substrate 25 and a semiconductor layer sequence 2 arranged on the substrate 25. The semiconductor layer sequence comprises an active region 20 arranged between a first semiconductor layer 21 of a first conductivity type and a second semiconductor layer 22 of a second conductivity type, whereby the active region exists as a pn junction region. For example, the first semiconductor layer has n-type conductivity and the second semiconductor layer 22 has p-type conductivity. Contact surfaces for external electrical contacts of the first semiconductor layer 21 and the second semiconductor layer 22 are not explicitly shown in FIG. 9B for the sake of clarity.

[0079] The semiconductor laser 1 has a resonator region 29, in which the semiconductor laser 1 extends in the longitudinal direction, i.e. along the resonator axis 5, between two laterally extending side surfaces 11. Perpendicular to this, the semiconductor laser 1 has a longitudinally extending side surface 12. In the illustrated embodiment, the resonator region 29 is formed as a bridge-type waveguide. However, the resonator region 29 may alternatively be a region of the semiconductor laser 1 in which radiation is gain-guided and oscillates in the resonator.

[0080] The semiconductor laser has one resonator facet 30 on each of the laterally extending side surfaces 11, which facets 30 are arranged offset with respect to the laterally extending side surfaces 11 of the semiconductor laser 1. The resonator faces 30 define resonator regions 29 on two opposite sides when viewed along the resonator axis 5.

[0081] Furthermore, the semiconductor laser 1 has a recess 3, the side surfaces 31 of which form the resonator facets 30. The recess 3 extends vertically, i.e. perpendicularly to the main extension plane of the semiconductor layer stack 2, into the substrate 25. In the example shown, the recess 3 is formed in the region of a widening region 27 of a resonator region 29 configured as a bridge-type waveguide. In the plan view of the semiconductor laser, the recess extends up to said laterally extending side surface 11. The recess 3 can border the widening region 27 at all points that are spaced apart from the laterally extending side surface 11 when the semiconductor laser is viewed from above. That is to say, the semiconductor material bordering the recess 3 has the same height at these points.

[0082] However, such widened regions 27 are not necessarily required as described in connection with the method. Also, the widened regions 27 may extend to the longitudinal sides 12, and thus have the same lateral dimensions as the semiconductor laser 1. Similarly, the recess 3 may extend to the longitudinal sides 12.

[0083] This patent application claims priority from German patent application No. 102020130017.4, the disclosure of which is hereby incorporated by reference.

[0084] The invention is not limited to the description of the examples, but rather includes all novel features and combinations thereof, including in particular all combinations of features in the claims, even if these features are not themselves explicitly set out in the claims or examples. [Explanation of symbols]

[0085] 1. Semiconductor laser 10 Module Area 11. Lateral aspect 12 Longitudinal side 2. Semiconductor laminate 20 active area 21 First semiconductor layer 22 Second semiconductor layer 25 Substrate 27 Widening Area 29 Resonator region 3. Recess 30 Resonator plane 31 Side of the recess 4 Channels 5 Resonator axis 6. Mask 60 Opening 7 Arrow 91 Horizontal individualization lines 92 Longitudinal individualization line

Claims

1. A method for manufacturing a plurality of semiconductor lasers (1), comprising the steps of: a) providing a substrate (25) having a semiconductor layer stack (2) and a plurality of module regions (10), each module region having at least one resonator region (29) and defined by lateral singulation lines (91) in a direction perpendicular to said resonator region and by longitudinal singulation lines (92) in a direction parallel to said resonator region (29); b) forming, by a dry chemical etching process, recesses (3) overlapping said lateral singulation lines, said recesses (3) having an at least partially curved basic shape, the radius of curvature of said recesses in the region of said resonator region (29) being between 10 and 500 times the width of said resonator region (29); c) wet-chemically etching the side surfaces (31) of the recesses to form resonator faces (30), in which step c) crystal planes extending perpendicular to the resonator region (29) are exposed at least in the region of the resonator region (29) and flat resonator faces (30) are formed in the region of the resonator region (29); d) singulating said substrate (25) along said lateral singulation lines and said longitudinal singulation lines; A method comprising:

2. The semiconductor stack (2) is based on a nitride semiconductor material, In step c), the (1-100) plane of the semiconductor laminate (2) is exposed. The method of claim 1.

3. In step b), the recesses (3) are formed so as to be spaced apart from the longitudinal singulation lines (92), 3. The method according to claim 1 or 2.

4. The recess (3) has a polygonal basic shape. The method of claim 3.

5. At least two side surfaces (31) of the basic polygonal shape form an angle of 100° or more and 140° or less. The method of claim 4.

6. Each laterally adjacent recess (3) is interconnected by a channel (4); 6. The method according to any one of claims 3 to 5.

7. each recess (3) between adjacent module regions (10) extends over the entire longitudinal singulation line (92); 3. The method according to claim 1 or 2.

8. The resonator region (29) is a bridge-type waveguide; the bridge-type waveguide has a widened region (27) along the transverse singulation line (91), the recess being formed in the widened region; 8. The method according to any one of claims 1 to 7.

9. the recesses (3) are each formed completely in the widened region (27), and immediately after being formed, the recesses are surrounded along their entire periphery by semiconductor material at the same height; The method of claim 8.

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